Spin transfer torque-based spin micro system, manufacturing method and chip

Abstract

The present disclosure is applicable to the technical field of spintronics. Provided is a spin transfer torque-based spin micro system. The system comprises a spin sensor device, which is configured to sense an external magnetic field and an external microwave signal, convert the external magnetic field and the external microwave signal into an electrical signal, and output same to a spin storage device; a spin logic device, which is configured to generate a first spin current to perform logic operation on the electric signal to obtain magnetic field information about the external magnetic field and microwave information about the external microwave signal, and output the magnetic field information and the microwave information to the spin storage device; a spin storage device, which is configured to receive the electric signal, the magnetic field information and the microwave information, generate a second spin current to output the electric signal to the spin logic device, and output the magnetic field information and the microwave information to a spin oscillator device; and a spin oscillator device, which is configured to receive the magnetic field information and the microwave information and generate a third spin current to convert the magnetic field information and the microwave information into an output microwave signal.

Description

Spin microsystem, preparation method and chip based on spin transfer torque Technical Field

[0001] The present disclosure relates to the field of spin electronics technology, and in particular to a spin microsystem based on spin transfer torque, a preparation method, and a chip. Background Art

[0002] When current flows from the reference layer to the free layer, it first obtains spin angular momentum with the same magnetization direction as the reference layer. When this spin-polarized current enters the free layer, it interacts with the magnetization of the free layer, causing the transverse component of the spin-polarized current to be transferred. Due to the conservation of angular momentum, the transferred transverse component will act on the free layer in the form of a torque, forcing its magnetization direction to be close to that of the reference layer. This torque is called spin transfer torque (STT).

[0003] In the process of realizing the concept of the present disclosure, the inventors discovered that there are at least the following problems in the related art: the spintronic devices in the related art cannot effectively improve system performance.

[0004] Summary of the Invention

[0005] In view of the above problems, the present disclosure provides a spin microsystem based on spin transfer torque, a preparation method and a chip.

[0006] A first aspect of the present disclosure provides a spin microsystem based on spin transfer torque, comprising:

[0007] a spin sensor device configured to sense an external magnetic field and an external microwave signal, and convert the external magnetic field and the external microwave signal into electrical signals and output them to the spin memory device;

[0008] a spin logic device configured to generate a first spin current in the first pinned layer and the first reference layer, perform a logic operation on the electrical signal to obtain magnetic field information about the external magnetic field and microwave information about the external microwave signal, and output the magnetic field information and microwave information to the spin memory device;

[0009] A spin memory device configured to receive the electrical signal, the magnetic field information, and the microwave signal, generate a second spin current in the second pinned layer and the second reference layer, output the electrical signal to the spin logic device, and output the magnetic field information and the microwave information to the spin oscillator device;

[0010] The spin oscillation device is configured to receive the magnetic field information and the microwave information, and generate a third spin current in the third pinned layer and the third reference layer to convert the magnetic field information and the microwave information into an output microwave signal.

[0011] According to an embodiment of the present disclosure, the spin logic device includes a first top electrode, the first pinned layer, the first reference layer, a first barrier layer, a first free layer, and a first bottom electrode, wherein the first pinned layer, the first reference layer, the first barrier layer, and the first free layer form a first tunnel junction of the spin logic device.

[0012] The above-mentioned spin logic device is also configured to generate the above-mentioned first spin current in the above-mentioned first pinned layer and the above-mentioned first reference layer when the above-mentioned first tunnel junction receives the electrical signal from the above-mentioned spin memory device, so as to change the magnetic moment state in the above-mentioned first free layer, perform logical operations on the above-mentioned electrical signal, obtain magnetic field information about the above-mentioned external magnetic field and microwave information of the above-mentioned external microwave signal, and output the above-mentioned magnetic field information and the above-mentioned microwave information to the above-mentioned spin memory device.

[0013] According to an embodiment of the present disclosure, the first tunnel junction is cylindrical in shape, the size of the first tunnel junction is 10 to 100 nanometers, the thickness of the first reference layer is 0.8 to 1.3 nanometers, and the thickness of the first barrier layer is 1 to 3 nanometers.

[0014] According to an embodiment of the present disclosure, the spin memory device includes a second top electrode, the second pinned layer, the second reference layer, a second barrier layer, a second free layer, and a second bottom electrode, wherein the second pinned layer, the second reference layer, the second barrier layer, and the second free layer form a second tunnel junction of the spin memory device.

[0015] The above-mentioned spin memory device is also configured to receive the above-mentioned electrical signal, the above-mentioned magnetic field information and the above-mentioned microwave information when the above-mentioned second tunnel junction receives the first current, and to generate the above-mentioned second spin current in the above-mentioned second pinned layer and the above-mentioned second reference layer when the above-mentioned second tunnel junction receives the second current, so as to change the magnetic moment state in the above-mentioned second free layer, thereby outputting the above-mentioned electrical signal to the above-mentioned spin logic device and outputting the above-mentioned magnetic field information and the above-mentioned microwave information to the above-mentioned spin oscillation device.

[0016] According to an embodiment of the present disclosure, the second tunnel junction is cylindrical in shape, the size of the second tunnel junction is 10 to 100 nanometers, the thickness of the second reference layer is 0.8 to 1.3 nanometers, and the thickness of the second barrier layer is 1 to 3 nanometers.

[0017] According to an embodiment of the present disclosure, the spin oscillator device includes a third top electrode, the third pinned layer, the third reference layer, a third barrier layer, a third free layer, and a third bottom electrode, wherein the third pinned layer, the third reference layer, the third barrier layer, and the third free layer form a third tunnel junction of the spin memory device.

[0018] The above-mentioned spin oscillation device is also configured to generate the above-mentioned third spin current in the above-mentioned third pinned layer and the above-mentioned third reference layer when the above-mentioned third tunnel junction receives the third current, so as to cause the magnetic moment in the above-mentioned third free layer to oscillate at high frequency, thereby converting the above-mentioned magnetic field information and the above-mentioned microwave information into an output microwave signal.

[0019] According to an embodiment of the present disclosure, the third tunnel junction is cylindrical in shape, the size of the third tunnel junction is 10 to 100 nanometers, the thickness of the third reference layer is 0.8 to 1.3 nanometers, and the thickness of the third barrier layer is 1 to 3 nanometers.

[0020] According to an embodiment of the present disclosure, the above-mentioned spin sensor device includes a fourth top electrode, the above-mentioned fourth pinned layer, the above-mentioned fourth reference layer, a fourth barrier layer, a fourth free layer and a fourth bottom electrode, and the above-mentioned fourth pinned layer, the above-mentioned fourth reference layer, the above-mentioned fourth barrier layer and the above-mentioned fourth free layer form a fourth tunnel junction of the above-mentioned spin sensor device.

[0021] According to an embodiment of the present disclosure, the fourth tunnel junction is cylindrical in shape, the size of the fourth tunnel junction is 10 to 100 micrometers, the thickness of the fourth reference layer is 0.8 to 1.3 nanometers, and the thickness of the fourth barrier layer is 1 to 3 nanometers.

[0022] According to an embodiment of the present disclosure, the spin microsystem further includes a control device configured to generate control instructions so that the spin sensor device, the spin logic device, the spin memory device, and the spin oscillation device operate under the control of the control instructions.

[0023] A second aspect of the present disclosure provides a method for preparing a spin microsystem based on spin transfer torque, comprising:

[0024] Preparation of the bottom electrode of the spin microsystem;

[0025] depositing a free layer, a barrier layer, a reference layer, and a pinning layer of the spin microsystem;

[0026] Etching to the bottom electrode to form the pattern structure of the spin sensor device, spin logic device, spin memory device and spin oscillation device in the spin microsystem;

[0027] utilizing to prepare a protective layer;

[0028] preparing through holes on the surface of the protective layer;

[0029] Prepare the top electrode.

[0030] A third aspect of the present disclosure provides a chip, including:

[0031] Such as the spin microsystem based on spin transfer torque mentioned above.

[0032] According to the spin microsystem, preparation method, and chip based on spin transfer torque provided by the present disclosure, by integrating spin sensor devices, spin logic devices, spin storage devices, and spin oscillation devices into the same system, the spin microsystem is no longer a spin electronic device with only a single function. At the same time, functions such as sensing, logic operations, storage, and oscillation based on spin transfer torque are realized in the spin microsystem, thereby improving the performance of the spin microsystem. Compared with traditional electronic devices, spin electronic devices based on the STT effect have the characteristics of low power consumption, easy integration, and high sensitivity. The significance of the development of spin electronic devices lies in breaking through the limitations of traditional electronic devices and achieving higher device density, lower power consumption, and more functions. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] The above contents and other objects, features and advantages of the present disclosure will become more apparent through the following description of the embodiments of the present disclosure with reference to the accompanying drawings, in which:

[0034] FIG1 schematically shows a block diagram of a spin microsystem based on spin transfer torque according to an embodiment of the present disclosure;

[0035] FIG2 schematically shows a structural diagram of a spin logic device according to an embodiment of the present disclosure;

[0036] FIG3 schematically shows a circuit diagram of a spin memory device according to an embodiment of the present disclosure;

[0037] FIG4 schematically shows a flow chart of a method for preparing a spin microsystem based on spin transfer torque according to an embodiment of the present disclosure;

[0038] FIG5 schematically shows a structural diagram of a spin microsystem based on spin transfer torque according to an embodiment of the present disclosure;

[0039] FIG6 schematically shows a data flow diagram of a spin microsystem based on spin transfer torque according to an embodiment of the present disclosure; and

[0040] FIG7 schematically shows a block diagram of a chip according to an embodiment of the present disclosure. DETAILED DESCRIPTION

[0041] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. However, it should be understood that these descriptions are merely exemplary and are not intended to limit the scope of the present disclosure. In the detailed description below, for ease of explanation, many specific details are set forth to provide a comprehensive understanding of the embodiments of the present disclosure. However, it is apparent that one or more embodiments may also be implemented without these specific details. In addition, in the following description, descriptions of well-known structures and technologies are omitted to avoid unnecessary confusion of the concepts of the present disclosure.

[0042] The terms used herein are only for describing specific embodiments and are not intended to limit the present disclosure. The terms "comprise," "include," etc. used herein indicate the presence of the features, steps, operations, and / or components, but do not exclude the presence or addition of one or more other features, steps, operations, or components.

[0043] All terms used herein (including technical and scientific terms) have the meanings commonly understood by those skilled in the art unless otherwise defined. It should be noted that the terms used herein should be interpreted as having a meaning consistent with the context of this specification and should not be interpreted in an idealized or overly rigid manner.

[0044] When expressions such as "at least one of A, B and C, etc." are used, they should generally be interpreted in accordance with the meaning of the expression commonly understood by those skilled in the art (for example, "a system having at least one of A, B and C" should include but is not limited to a system having A alone, B alone, C alone, A and B, A and C, B and C, and / or A, B, C, etc.).

[0045] As the size of traditional semiconductor devices continues to approach physical limits and Moore's Law gradually becomes ineffective, the research and development of new electronic devices is gaining increasing attention to further advance electronic technology. Spintronic devices are a new type of electronic device that achieves information sensing, storage, transmission, and processing by regulating and detecting the electron spin state and the magnetic moment of matter. Compared to traditional electronic devices that only emphasize charge properties, spintronic devices introduce spin as a new degree of freedom, making them a future-oriented electronic device. Electron spin and the magnetic moment of matter can be manipulated magnetically and electrically using the STT effect. Based on this, a series of spintronic devices have been developed, showing great application potential in magnetic sensing, information technology, energy conversion, and other fields.

[0046] Common spintronic devices include magnetoresistive sensors, magnetoresistive random access memories (MRRAMs), spin nanooscillators, and spin logic devices. However, existing research has largely focused on the development and large-scale integration of a single device type, neglecting the study of hardware systems. However, the improvement in overall system performance achieved by a single spintronic device is limited. Beyond integrated storage and computing devices, the integration of diverse device types remains a significant research gap.

[0047] In view of this, an embodiment of the present disclosure provides a spin microsystem based on spin transfer torque, including a spin sensor device, configured to sense an external magnetic field and an external microwave signal, and convert the external magnetic field and the external microwave signal into an electrical signal and output it to a spin memory device; a spin logic device, configured to generate a first spin current in a first pinned layer and a first reference layer, perform logical operations on the electrical signal to obtain magnetic field information about the external magnetic field and microwave information of the external microwave signal, and output the magnetic field information and the microwave information to the spin memory device; a spin memory device, configured to receive the electrical signal, the magnetic field information and the microwave information, generate a second spin current in a second pinned layer and a second reference layer, output the electrical signal to the spin logic device, and output the magnetic field information and the microwave information to a spin oscillation device; a spin oscillation device, configured to receive the magnetic field information and the microwave information, and generate a third spin current in a third pinned layer and a third reference layer, convert the magnetic field information and the microwave information into a microwave signal for output.

[0048] FIG1 schematically shows a block diagram of a spin microsystem based on spin transfer torque according to an embodiment of the present disclosure.

[0049] As shown in FIG. 1 , a spin microsystem 100 includes a spin sensor device 110 , a spin logic device 120 , a spin memory device 130 , and a spin oscillation device 140 .

[0050] The spin sensor device 110 is configured to sense an external magnetic field and an external microwave signal, and convert the external magnetic field and the external microwave signal into electrical signals and output them to the spin memory device.

[0051] The spin logic device 120 is configured to generate a first spin current in the first pinned layer and the first reference layer to perform logic operations on the electrical signal to obtain magnetic field information about the external magnetic field and microwave information about the external microwave signal, and output the magnetic field information and microwave information to the spin memory device.

[0052] The spin memory device 130 is configured to receive electrical signals, magnetic field information, and microwave information, generate a second spin current in the second pinned layer and the second reference layer, output the electrical signal to the spin logic device, and output the magnetic field information and microwave information to the spin oscillation device.

[0053] The spin oscillator device 140 is configured to receive magnetic field information and microwave information, and generate a third spin current in the third pinned layer and the third reference layer to convert the magnetic field information and microwave information into an output microwave signal for output.

[0054] According to an embodiment of the present disclosure, the external magnetic field may be a magnetic field to be detected, and the external microwave signal may be a microwave signal to be detected.

[0055] According to the embodiments of the present disclosure, the operation of the spin sensor device is independent of the STT. The magnetic moment state of the spin sensor device is affected only by the external magnetic field. By applying a small current and detecting the device's magnetic resistance, the external magnetic field can be measured.

[0056] According to the embodiments of the present disclosure, since the spin oscillator device can both receive and transmit microwave signals, a portion of the spin oscillator device can be regarded as a spin sensor device for sensing external microwave signals.

[0057] According to embodiments of the present disclosure, in a spin microsystem based on spin transfer torque, a pinned layer can be used to fix the magnetic moment direction of a reference layer. When current flows through the pinned layer and the reference layer, electrons of the same polarity are more likely to pass through due to the selective effect of electron spins, forming a spin current. Therefore, a spin logic device can use the first pinned layer and the first reference layer to generate a first spin current, a spin memory device can use the second pinned layer and the second reference layer to generate a second spin current, and a spin oscillator device can use the third pinned layer and the third reference layer to generate a third spin current.

[0058] According to the embodiments of the present disclosure, by integrating spin sensors, spin logic devices, spin memory devices, and spin oscillators into a single system, the spin microsystem is no longer a single-function spintronic device. Instead, it implements spin transfer torque-based sensing, logic operations, storage, and oscillation functions, thereby improving the performance of the spin microsystem. Compared to traditional electronic devices, spintronic devices based on the STT effect have the advantages of low power consumption, ease of integration, and high sensitivity. The significance of the development of spintronic devices lies in overcoming the limitations of traditional electronic devices, thereby achieving higher device density, lower power consumption, and more functionality.

[0059] According to an embodiment of the present disclosure, the spin microsystem further includes a control device configured to generate control instructions so that the spin sensor device, the spin logic device, the spin memory device, and the spin oscillation device operate under the control of the control instructions.

[0060] According to an embodiment of the present disclosure, the control device can control each spin device to operate according to the instruction transmitted from the spin memory device.

[0061] FIG2 schematically shows a structural diagram of a spin logic device according to an embodiment of the present disclosure.

[0062] 2 , the spin logic device 200 includes a first top electrode 201, a first pinned layer 202, a first reference layer 203, a first barrier layer 204, a first free layer 205, and a first bottom electrode 206. The first pinned layer 202, the first reference layer 203, the first barrier layer 204, and the first free layer 205 form a first tunnel junction 210 of the spin logic device 200.

[0063] The first tunnel junction 210 is cylindrical in shape, has a size of 10 to 100 nanometers, a thickness of the first reference layer of 0.8 to 1.3 nanometers, and a thickness of the first barrier layer of 1 to 3 nanometers.

[0064] According to an embodiment of the present disclosure, the first pinned layer can be made of a synthetic antiferromagnetic (SAF) material, the first reference layer can be made of cobalt iron boron (CoFeB), the first barrier layer can be made of magnesium oxide (MgO), and the first free layer can be made of cobalt iron boron (CoFeB). The first pinned layer is used to fix the magnetic moment direction of the first reference layer. When current flows through the first pinned layer and the first reference layer, which have fixed magnetic moment directions, electrons of the same polarity are more likely to pass through due to the selective effect of electron spin, forming a spin current.

[0065] The spin logic device can also be configured to generate a first spin current in the first pinned layer and the first reference layer when the first tunnel junction receives an electrical signal from the spin memory device, so as to change the magnetic moment state in the first free layer, perform logical operations on the electrical signal, obtain magnetic field information about the external magnetic field and microwave information of the external microwave signal, and output the magnetic field information and microwave information to the spin memory device.

[0066] According to the embodiments of the present disclosure, the junction region of the first tunnel junction of a spin logic device is as small as nanometers. Therefore, the magnetic moment of the first free layer of the first tunnel junction can be considered to be in a single-domain state, with only two magnetic moment states. In other words, the electrical output exhibits a distinct switching phenomenon, allowing it to function as a switching device. Therefore, in a spin logic device, current can be used as input and the device magnetic moment state as output, and various logic operations can be implemented by combining peripheral circuits and switching devices.

[0067] According to an embodiment of the present disclosure, the magnetic moment directions of the first pinned layer and the first reference layer can be fixed. When the first pinned layer and the first reference layer in the first tunnel junction receive an electrical signal, electrons of the same polarity are more likely to pass through to form a spin current due to the spin selection effect. Therefore, a first spin current is generated in the first pinned layer and the first reference layer. The first spin current enters the first free layer, exchanges with the magnetic moment of the first free layer, and changes the magnetic moment state in the first free layer, thereby performing a logical operation on the electrical signal to obtain magnetic field information about the external magnetic field and microwave information of the external microwave signal, and outputting the magnetic field information and microwave information to the spin memory device.

[0068] According to the embodiments of the present disclosure, compared with traditional electronic devices, spin logic devices based on the STT effect have the characteristics of low power consumption, easy integration, high sensitivity, etc.

[0069] According to an embodiment of the present disclosure, a spin memory device includes a second top electrode, a second pinned layer, a second reference layer, a second barrier layer, a second free layer, and a second bottom electrode. The second pinned layer, the second reference layer, the second barrier layer, and the second free layer form a second tunnel junction of the spin memory device. The second tunnel junction is cylindrical in shape, the size of the second tunnel junction is 10 to 100 nanometers, the thickness of the second reference layer is 0.8 to 1.3 nanometers, and the thickness of the second barrier layer is 1 to 3 nanometers.

[0070] According to an embodiment of the present disclosure, the second pinned layer can be made of a synthetic antiferromagnetic (SAF) material, the second reference layer can be made of a ferromagnetic material (such as cobalt iron boron (CoFeB), cobalt iron (CoFe), etc.) or a semi-metallic material, the second barrier layer can be made of magnesium oxide (MgO), and the second free layer can be made of a ferromagnetic material (such as cobalt iron boron (CoFeB), cobalt iron (CoFe), etc.) or a semi-metallic material. The second pinned layer is used to fix the magnetic moment direction of the second reference layer. When current flows through the second pinned layer with fixed magnetic moment direction and the second reference layer, electrons of the same polarity are more likely to pass through to form a spin current due to the selective effect of electron spin.

[0071] The spin memory device is also configured to receive electrical signals, magnetic field information and microwave information when the second tunnel junction receives a first current, and to generate a second spin current in the second pinned layer and the second reference layer when the second tunnel junction receives a second current to change the magnetic moment state in the second free layer, thereby outputting the electrical signal to the spin logic device and outputting the magnetic field information and microwave information to the spin oscillation device.

[0072] According to an embodiment of the present disclosure, since the structure of the spin memory device is the same as that of the spin logic device, the structural diagram of the spin memory device may refer to FIG. 2 .

[0073] According to the embodiments of the present disclosure, the junction diameter of the spin memory device is generally 10-100nm. The nanometer-scale size allows the magnetic moment in the second free layer to be considered as a single magnetic moment distribution, with only two states: antiparallel and parallel (i.e., "0" and "1"), and can be used as a storage unit. In the case of a read operation, a small current (for example, a current density of 10 8 A / m 2 ) flows through the second tunnel junction. The resistance of the tunnel junction in the two states is different, and the port voltage can represent the storage state. In the case of a write operation, a large current pulse (for example, the current density can be 10 11A / m 2 ), a second spin current is generated through the STT effect to induce the magnetic moment reversal in the second free layer, thereby realizing the switching of the storage state.

[0074] FIG3 schematically shows a circuit diagram of a spin memory device according to an embodiment of the present disclosure.

[0075] As shown in Figure 3, WL0-WL4 are write word lines of the spin memory device, BL0-BL4 are bit lines of the spin memory device, and SL0-SL4 are source lines of the spin memory device. The number of spin memory devices shown in Figure 3 is for illustration only and is not limited thereto.

[0076] The array arrangement of the spin memory devices and the array arrangement of the spin logic devices may be the same.

[0077] According to the embodiments of the present disclosure, compared with traditional electronic devices, spin memory devices based on the STT effect have the characteristics of low power consumption, easy integration, high sensitivity, etc.

[0078] According to an embodiment of the present disclosure, the spin oscillation device includes a third top electrode, a third pinned layer, a third reference layer, a third barrier layer, a third free layer and a third bottom electrode, and the third pinned layer, the third reference layer, the third barrier layer and the third free layer form a third tunnel junction of the spin memory device.

[0079] According to an embodiment of the present disclosure, the third tunnel junction is cylindrical, the size of the third tunnel junction is 10-100 nanometers, the thickness of the third reference layer is 0.8-1.3 nanometers, and the thickness of the third barrier layer is 1-3 nanometers.

[0080] Since the structure of the spin oscillator device is the same as that of the spin logic device, the structural diagram of the spin oscillator device can refer to FIG2 .

[0081] According to embodiments of the present disclosure, the third pinned layer can be made of a synthetic antiferromagnetic (SAF) material, the third reference layer can be made of a ferromagnetic material (such as cobalt iron boron (CoFeB), cobalt iron (CoFe), etc.) or a semi-metallic material, the third barrier layer can be made of magnesium oxide (MgO), and the third free layer can be made of a ferromagnetic material (such as cobalt iron boron (CoFeB), cobalt iron (CoFe), etc.) or a semi-metallic material. The third pinned layer is used to fix the magnetic moment direction of the third reference layer. When current flows through the third pinned layer and the third reference layer, which have fixed magnetic moment directions, electrons of the same polarity are more likely to pass through to form a spin current due to the selective effect of electron spin.

[0082] The spin oscillator device is also configured to generate a third spin current in the third pinned layer and the third reference layer when the third tunnel junction receives a third current, so as to cause the magnetic moment in the third free layer to oscillate at high frequency, thereby converting the magnetic field information and microwave information into an output microwave signal.

[0083] According to the embodiments of the present disclosure, when the third tunnel junction receives a third current, electrons of the same polarity preferentially pass through due to the selective effect of the third reference layer, forming a third spin current that is injected into the third free layer, thereby affecting the magnetic moment in the third free layer. When the current density in the third free layer is within a certain range, the third spin current is insufficient to induce a complete reversal of the magnetic moment in the third free layer, but it will cause it to oscillate at high frequencies. The high-frequency oscillation of the magnetic moment will cause high-frequency changes in the surrounding magnetic field, thereby generating high-frequency electromagnetic waves. The frequency of high-frequency electromagnetic waves is often related to the external magnetic field and the magnitude of the applied current. Therefore, it is possible to convert magnetic field information and microwave information into an output microwave signal.

[0084] According to the embodiments of the present disclosure, compared with traditional electronic devices, spin oscillation devices based on the STT effect have the characteristics of low power consumption, easy integration, high sensitivity, etc.

[0085] According to an embodiment of the present disclosure, a spin sensor device includes a fourth top electrode, a fourth pinned layer, a fourth reference layer, a fourth barrier layer, a fourth free layer, and a fourth bottom electrode, wherein the fourth pinned layer, the fourth reference layer, the fourth barrier layer, and the fourth free layer form a fourth tunnel junction of the spin sensor device.

[0086] According to an embodiment of the present disclosure, the fourth tunnel junction is cylindrical, the size of the fourth tunnel junction is 10-100 micrometers, the thickness of the fourth reference layer is 0.8-1.3 nanometers, and the thickness of the fourth barrier layer is 1-3 nanometers.

[0087] Since the structure of the spin sensor device is the same as that of the spin logic device, the structural diagram of the spin sensor device can refer to FIG2 .

[0088] According to the embodiments of the present disclosure, since the spin sensor device requires a certain linear range and the ferromagnetic layer is in a multi-domain state, the junction area size of the fourth tunnel junction of the spin sensor device is on the micron level. However, the spin memory device, spin logic device, and spin oscillation device require a free layer that is approximately single-domain, so the junction area size of the tunnel junction is on the nanometer level.

[0089] According to an embodiment of the present disclosure, the fourth pinned layer can be made of a synthetic antiferromagnetic (SAF) material, the fourth reference layer can be made of a ferromagnetic material (such as cobalt iron boron (CoFeB), cobalt iron (CoFe), etc.) or a semi-metallic material, the fourth barrier layer can be made of magnesium oxide (MgO), and the fourth free layer can be made of a ferromagnetic material (such as cobalt iron boron (CoFeB), cobalt iron (CoFe), etc.) or a semi-metallic material. The fourth pinned layer is used to fix the magnetic moment direction of the fourth reference layer. When current flows through the fourth pinned layer and the fourth reference layer with fixed magnetic moment directions, electrons of the same polarity are more likely to pass through to form a spin current due to the selective effect of electron spin.

[0090] According to the embodiments of the present disclosure, compared with traditional electronic devices, spin sensor devices based on the STT effect have the characteristics of low power consumption, easy integration, high sensitivity, etc.

[0091] FIG4 schematically shows a flow chart of a method for preparing a spin microsystem based on spin transfer torque according to an embodiment of the present disclosure.

[0092] As shown in FIG. 4 , the method includes operations S410 to S460 .

[0093] In operation S410 , a bottom electrode of a spin microsystem is prepared.

[0094] In operation S420 , a free layer, a barrier layer, a reference layer, and a pinned layer of the spin microsystem are deposited.

[0095] In operation S430 , etching is completed to the bottom electrode to form pattern structures of a spin sensor device, a spin logic device, a spin memory device, and a spin oscillation device in the spin microsystem.

[0096] In operation S440 , a protective layer is prepared.

[0097] In operation S450 , a through hole is formed on the surface of the protection layer.

[0098] In operation S460 , a top electrode is prepared.

[0099] According to the embodiments of the present disclosure, the bottom electrode of the spin microsystem can be prepared on the wafer surface using the Damascene process, and the surface of the bottom electrode is kept flat. The electrode material of the bottom electrode is generally gold, copper, etc.

[0100] According to the embodiments of the present disclosure, a multilayer thin film of a free layer, a barrier layer, a reference layer, and a pinned layer can be deposited on the surface of the bottom electrode using a magnetron sputtering process. The free layer is located on the bottom electrode, the barrier layer is located on the free layer, the reference layer is located on the barrier layer, and the pinned layer is located on the reference layer.

[0101] According to the embodiments of the present disclosure, all the spin sensor device, spin logic device, spin memory device and spin oscillation device are etched, ending at the bottom electrode, to form the graphic structures of the spin sensor device, spin logic device, spin memory device and spin oscillation device.

[0102] According to the embodiments of the present disclosure, a protective layer can be prepared by chemical vapor deposition. The protective layer is prepared to protect the various devices in the spin microsystem. The protective layer material is generally silicon dioxide (ie SiO2), silicon nitride (ie SiN x )wait.

[0103] According to an embodiment of the present disclosure, a reactive ion beam etching process may be used to form a through hole on the surface of the protective layer.

[0104] According to the embodiments of the present disclosure, the top electrode can be prepared by using magnetron sputtering and lift-off processes, thereby completing the entire preparation process.

[0105] According to the embodiments of the present disclosure, the basic film layers used in various devices in the spin microsystem are consistent, which makes the preparation processes of these devices similar. The preparation of all devices can be completed through a simple process flow, and multiple spin devices based on the spin transfer torque (STT) effect are integrated on the same wafer to form a spin microsystem, thereby realizing multiple functions including data storage, logic calculation, microwave transmission, microwave reception and magnetic field sensing, and reducing the overall size of the spin microsystem, realizing three-dimensional heterogeneous and heterogeneous integration of different materials and devices.

[0106] FIG5 schematically shows a structural diagram of a spin microsystem based on spin transfer torque according to an embodiment of the present disclosure.

[0107] As shown in FIG5 , a spin microsystem 500 based on spin transfer torque may include a spin sensor device 510, multiple spin logic devices 520, multiple spin memory devices 530, and multiple spin oscillator devices 540. It should be understood that the number of spin sensor devices 510, spin logic devices 520, spin memory devices 530, and spin oscillator devices 540 shown in FIG5 is merely illustrative and may be adjusted to other numbers based on actual needs.

[0108] FIG6 schematically shows a data flow diagram of a spin microsystem based on spin transfer torque according to an embodiment of the present disclosure.

[0109] As shown in Figure 6, the spin sensor device can sense an external magnetic field or microwave signal, converting it into a series of electrical signals that are then transmitted to the spin memory device. The spin memory device then transmits the stored electrical signals to the spin logic device for computation and stores the resulting magnetic field information in the spin memory device. This magnetic field information is then transmitted to the spin oscillator device, which outputs it as a microwave signal. Throughout this process, an external control device controls the operation of each functional device according to the instructions transmitted by the memory device. The entire spin microsystem, except for the control device, consists of spintronic devices fabricated on the same wafer.

[0110] FIG7 schematically shows a block diagram of a chip according to an embodiment of the present disclosure.

[0111] As shown in FIG. 7 , a chip 700 includes a spin microsystem 710 based on spin transfer torque.

[0112] The flowcharts and block diagrams in the accompanying drawings illustrate the possible implementation architecture, functions and operations of the systems, methods and computer program products according to various embodiments of the present disclosure. In this regard, each box in the flowchart or block diagram can represent a module, program segment, or a part of code, and the above-mentioned module, program segment, or a part of code contains one or more executable instructions for implementing the specified logical function. It should also be noted that in some alternative implementations, the functions marked in the box can also occur in an order different from that marked in the accompanying drawings. For example, two boxes represented in succession can actually be executed substantially in parallel, and they can sometimes be executed in the opposite order, depending on the functions involved. It should also be noted that each box in the block diagram or flowchart, and the combination of boxes in the block diagram or flowchart, can be implemented with a dedicated hardware-based system that performs the specified function or operation, or can be implemented with a combination of dedicated hardware and computer instructions.

[0113] Those skilled in the art will appreciate that the features described in the various embodiments and / or claims of this disclosure may be combined and / or coupled in various ways, even if such combinations and / or couplings are not explicitly described in this disclosure. In particular, the features described in the various embodiments and / or claims of this disclosure may be combined and / or coupled in various ways without departing from the spirit and teachings of this disclosure. All such combinations and / or couplings are intended to fall within the scope of this disclosure.

[0114] The embodiments of the present disclosure are described above. However, these embodiments are for illustrative purposes only and are not intended to limit the scope of the present disclosure. Although each embodiment has been described separately above, this does not mean that the measures in each embodiment cannot be used in combination to advantage. The scope of the present disclosure is defined by the appended claims and their equivalents. Without departing from the scope of the present disclosure, those skilled in the art may make various substitutions and modifications, which should all fall within the scope of the present disclosure.

Claims

1. A spin microsystem based on spin transfer torque, comprising: a spin sensor device configured to sense an external magnetic field and an external microwave signal, and convert the external magnetic field and the external microwave signal into electrical signals and output them to a spin memory device; a spin logic device configured to generate a first spin current in the first pinned layer and the first reference layer, perform a logic operation on the electrical signal to obtain magnetic field information about the external magnetic field and microwave information about the external microwave signal, and output the magnetic field information and the microwave information to the spin memory device; a spin memory device configured to receive the electrical signal, the magnetic field information, and the microwave information, generate a second spin current in the second pinned layer and the second reference layer, output the electrical signal to the spin logic device, and output the magnetic field information and the microwave information to a spin oscillation device; The spin oscillation device is configured to receive the magnetic field information and the microwave information, and generate a third spin current in a third pinned layer and a third reference layer to convert the magnetic field information and the microwave information into an output microwave signal.

2. The spin microsystem according to claim 1, wherein The spin logic device includes a first top electrode, the first pinned layer, the first reference layer, a first barrier layer, a first free layer, and a first bottom electrode, wherein the first pinned layer, the first reference layer, the first barrier layer, and the first free layer form a first tunnel junction of the spin logic device; The spin logic device is further configured to generate the first spin current in the first pinned layer and the first reference layer when the first tunnel junction receives an electrical signal from the spin memory device, so as to change the magnetic moment state in the first free layer, perform logical operations on the electrical signal, obtain magnetic field information about the external magnetic field and microwave information of the external microwave signal, and output the magnetic field information and the microwave information to the spin memory device.

3. The spin microsystem according to claim 2, wherein: The first tunnel junction is cylindrical in shape, has a size of 10 to 100 nanometers, a thickness of the first reference layer is 0.8 to 1.3 nanometers, and a thickness of the first barrier layer is 1 to 3 nanometers.

4. The spin microsystem according to claim 2, wherein: The spin memory device includes a second top electrode, the second pinned layer, the second reference layer, a second barrier layer, a second free layer, and a second bottom electrode, wherein the second pinned layer, the second reference layer, the second barrier layer, and the second free layer form a second tunnel junction of the spin memory device; The spin memory device is further configured to receive the electrical signal, the magnetic field information and the microwave information when the second tunnel junction receives the first current, and to generate the second spin current in the second pinned layer and the second reference layer when the second tunnel junction receives the second current, so as to change the magnetic moment state in the second free layer, thereby outputting the electrical signal to the spin logic device and outputting the magnetic field information and the microwave information to the spin oscillation device.

5. The spin microsystem according to claim 4, wherein: The second tunnel junction is cylindrical in shape, has a size of 10 to 100 nanometers, a thickness of the second reference layer is 0.8 to 1.3 nanometers, and a thickness of the second barrier layer is 1 to 3 nanometers.

6. The spin microsystem according to any one of claims 1 to 5, wherein: The spin oscillation device includes a third top electrode, the third pinned layer, the third reference layer, a third barrier layer, a third free layer and a third bottom electrode, wherein the third pinned layer, the third reference layer, the third barrier layer and the third free layer form a third tunnel junction of the spin memory device; The spin oscillator device is further configured to generate the third spin current in the third pinned layer and the third reference layer when the third tunnel junction receives the third current, so as to cause the magnetic moment in the third free layer to oscillate at high frequency, thereby converting the magnetic field information and the microwave information into an output microwave signal.

7. The spin microsystem according to claim 6, wherein: The third tunnel junction is cylindrical in shape, has a size of 10 to 100 nanometers, a thickness of the third reference layer is 0.8 to 1.3 nanometers, and a thickness of the third barrier layer is 1 to 3 nanometers.

8. The spin microsystem according to any one of claims 1 to 5, wherein: The spin sensor device includes a fourth top electrode, a fourth pinned layer, a fourth reference layer, a fourth barrier layer, a fourth free layer, and a fourth bottom electrode, wherein the fourth pinned layer, the fourth reference layer, the fourth barrier layer, and the fourth free layer form a fourth tunnel junction of the spin sensor device.

9. The spin microsystem according to claim 8, wherein The fourth tunnel junction is cylindrical in shape, has a size of 10 to 100 micrometers, a thickness of the fourth reference layer is 0.8 to 1.3 nanometers, and a thickness of the fourth barrier layer is 1 to 3 nanometers.

10. The spin microsystem according to any one of claims 1 to 5, wherein The spin microsystem further includes a control device configured to generate a control instruction so as to enable the spin sensor device, the spin logic device, the spin memory device, and the spin oscillation device to operate under the control of the control instruction.

11. A method for preparing a spin microsystem based on spin transfer torque, comprising: Preparation of the bottom electrode of the spin microsystem; depositing a free layer, a barrier layer, a reference layer, and a pinned layer of the spin microsystem; Etching to the bottom electrode to form the pattern structure of the spin sensor device, the spin logic device, the spin memory device and the spin oscillation device in the spin microsystem; preparing a protective layer; preparing through holes on the surface of the protective layer; Prepare the top electrode.

12. A chip comprising: The spin microsystem according to any one of claims 1 to 10.

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