Photodetector

Abstract

The present technology relates to a photodetector that makes it possible to minimize the occurrence of flaring and ghosting. This photodetector comprises a photoelectric conversion unit, first pixels having a first condensing unit for concentrating light on the photoelectric conversion unit, second pixels having a second condensing unit that has a different shape than the first condensing unit, and a pixel array unit in which the first pixels and the second pixels are arranged in a matrix, the second pixels being randomly arranged in the pixel array unit. The present technology is applicable to a photodetector for detecting light.

Description

Photodetector

[0001] The present technology relates to a photodetector, and more particularly to a photodetector that can capture images while suppressing the occurrence of flare and ghosting, for example.

[0002] In recent years, there has been a demand for digital video cameras and digital still cameras that offer high resolution to capture the finest details of a subject, while also being more compact for portability. Furthermore, development of imaging devices has been underway to reduce pixel size while maintaining imaging characteristics.

[0003] In addition to the continuous demand for higher resolution and smaller size, there is also an increasing demand for improved minimum subject illumination and high-speed imaging, and to achieve these, expectations are rising for imaging devices to improve overall image quality, including the S / N ratio. Patent Document 1 proposes improving image quality by forming a light-shielding film formed on the pixel boundaries of the light-receiving surface via an insulating layer, thereby reducing optical color mixing and flare.

[0004] JP 2010-186818 A

[0005] As mentioned above, conventionally, measures have been taken to suppress the occurrence of flare, ghosts, and the like, but the suppression effect is not sufficient, and there is a demand for measures with even greater suppression effect.

[0006] The present technology has been made in consideration of such circumstances, and is intended to make it possible to suppress the occurrence of flare and ghosts.

[0007] A first photodetector according to one aspect of the present technology is a photodetector including a photoelectric conversion unit, a first pixel having a first light-collecting unit that collects light on the photoelectric conversion unit, a second pixel having a second light-collecting unit having a shape different from that of the first light-collecting unit, and a pixel array unit in which the first pixels and the second pixels are arranged in a matrix, and the second pixels are arranged randomly in the pixel array unit.

[0008] A second photodetector according to one aspect of the present technology includes a photoelectric conversion unit, a light-collecting unit that collects light onto the photoelectric conversion unit, a pixel having the light-collecting unit, and a pixel array unit in which the pixels are arranged in a matrix, wherein the light-collecting unit includes a first member and a second member, and in the pixel array unit, a first period in which the first members are arranged is different from a second period in which the second members are arranged, and the second period is longer than the first period.

[0009] A third photodetector according to one aspect of the present technology includes a photoelectric conversion unit, a light collecting unit that collects light onto the photoelectric conversion unit, a pixel having the light collecting unit, and a pixel array unit in which the pixels are arranged in a matrix, wherein the light collecting unit includes a filter, and N filters with different transmission spectra are arranged within a block consisting of a predetermined number of pixels of the pixel array unit, and the arrangement of the N filters differs for each of the blocks.

[0010] A fourth photodetector according to one aspect of the present technology comprises a photoelectric conversion unit, a light-collecting unit that collects light onto the photoelectric conversion unit, a pixel having the light-collecting unit, and a pixel array unit in which the pixels are arranged in a matrix, wherein the light-collecting unit comprises a metasurface element, and at least two or more types of metasurface elements having the same phase difference design for light within the pixel and different shapes between pixels are arranged in the pixel array unit.

[0011] A first photodetector according to one aspect of the present technology includes a photoelectric conversion unit, a first pixel having a first light-collecting unit that collects light on the photoelectric conversion unit, a second pixel having a second light-collecting unit that has a shape different from that of the first light-collecting unit, and a pixel array unit in which the first pixels and the second pixels are arranged in a matrix, and the second pixels are arranged randomly in the pixel array unit.

[0012] A second photodetector according to one aspect of the present technology includes a photoelectric conversion unit, a light-collecting unit that collects light onto the photoelectric conversion unit, a pixel having the light-collecting unit, and a pixel array unit in which the pixels are arranged in a matrix, wherein the light-collecting unit includes a first member and a second member, and in the pixel array unit, a first period in which the first members are arranged is different from a second period in which the second members are arranged, and the second period is longer than the first period.

[0013] A third photodetector according to one aspect of the present technology includes a photoelectric conversion unit, a light-collecting unit that collects light onto the photoelectric conversion unit, a pixel having the light-collecting unit, and a pixel array unit in which the pixels are arranged in a matrix, the light-collecting unit including a filter, and N filters with different transmission spectra are arranged within a block of a predetermined number of pixels in the pixel array unit, with the arrangement of the N filters differing for each block.

[0014] A fourth photodetector device according to one aspect of the present technology includes a photoelectric conversion unit, a light-collecting unit that collects light on the photoelectric conversion unit, a pixel having the light-collecting unit, and a pixel array unit in which the pixels are arranged in a matrix, and the light-collecting unit is provided with a metasurface element, and at least two or more types of metasurface elements that have the same phase difference design for light within the pixel and different shapes between pixels are arranged in the pixel array unit.

[0015] The photodetector may be an independent device or an internal block constituting a single device.

[0016] 1 is a diagram illustrating a schematic configuration of a photodetector according to the present disclosure. FIG. 1 is a diagram illustrating an example of a planar configuration of an imaging device. FIG. 2 is a diagram illustrating an example of a cross-sectional configuration of an imaging device. FIG. 3 is a diagram illustrating the principle of occurrence of flare and ghost. FIG. 4 is a diagram illustrating a cell size and a diffraction angle. FIG. 5 is a diagram illustrating the relationship between cell size and reflectance. FIG. 6 is a diagram illustrating the configuration of an imaging device according to a first embodiment. FIG. 7 is a diagram illustrating the configuration of an imaging device according to the first embodiment. FIG. 8 is a diagram illustrating the configuration of a block. FIG. 9 is a diagram illustrating the configuration of a block. FIG. 10 is a diagram illustrating a verification result. FIG. 11 is a diagram illustrating the configuration of an imaging device according to a second embodiment. FIG. 12 is a diagram illustrating the configuration of an imaging device according to a third embodiment. FIG. 13 is a diagram illustrating the configuration of an imaging device according to the third embodiment. FIG. 14 is a diagram illustrating the manufacture of an on-chip lens according to the third embodiment. FIG. 15 is a diagram illustrating the configuration of an imaging device according to a fourth embodiment. FIG. 16 is a diagram illustrating the configuration of an imaging device according to a fifth embodiment. FIG. 17 is a diagram illustrating the configuration of an imaging device according to a sixth embodiment. FIG. 18 is a diagram illustrating the configuration of an imaging device according to a seventh embodiment. FIG. 19 is a diagram illustrating the configuration of an imaging device according to an eighth embodiment. FIG. 20 is a diagram illustrating the configuration of an imaging device according to a ninth embodiment. FIG. 21 is a diagram illustrating the configuration of a trench according to the ninth embodiment. FIG. 14 is a diagram illustrating an example of a planar configuration of a light-shielding film. FIG. 15 is a diagram illustrating a configuration of an imaging device according to a tenth embodiment. FIG. 16 is a diagram illustrating a configuration of an imaging device according to an eleventh embodiment. FIG. 17 is a diagram illustrating a configuration of a CF wall according to an eleventh embodiment. FIG. 18 is a diagram illustrating a configuration of a CF wall according to an eleventh embodiment. FIG. 19 is a diagram illustrating a configuration of a CF wall according to an eleventh embodiment. FIG. 20 is a diagram illustrating a configuration of an imaging device according to a twelfth embodiment. FIG. 21 is a diagram illustrating a configuration of a polarizer according to the twelfth embodiment.12. A diagram for explaining the configuration of a polarizer in a twelfth embodiment. A diagram for explaining the configuration of a polarizer in a twelfth embodiment. A diagram for explaining the configuration of a polarizer in a twelfth embodiment. A diagram for explaining the configuration of a polarizer. A diagram for explaining an example of an arrangement of a polarizer. A diagram for explaining the configuration of an imaging device in a twelfth embodiment. A diagram for explaining the configuration of a plasmon filter. A diagram for explaining the configuration of a Fabry-Perot filter. A diagram for explaining the configuration of a narrow-band filter layer. A diagram for explaining the configuration of a narrow-band filter layer in a twelfth embodiment .... A diagram for explaining an example arrangement of a narrow-band filter layer. A diagram for explaining the configuration of an imaging device in a thirteenth embodiment. A diagram for explaining a metasurface element. A diagram for explaining the configuration of a metasurface element. A diagram for explaining the configuration of a metasurface element. A diagram for explaining the configuration of a metasurface element in a thirteenth embodiment. A diagram for explaining the configuration of an on-chip lens. A diagram for explaining the configuration of an on-chip lens in a fourteenth embodiment. A diagram for explaining the configuration of an on-chip lens. FIG. 23 is a diagram for explaining the configuration of an on-chip lens in a fourteenth embodiment. FIG. 24 is a diagram for explaining the positional relationship between an on-chip lens and pixels. FIG. 25 is a diagram for explaining the positional relationship between an on-chip lens and pixels. FIG. 26 is a diagram for explaining an example of the configuration of an electronic device. FIG. 27 is a diagram for explaining an example of the schematic configuration of an endoscopic surgery system. FIG. 28 is a block diagram showing an example of the functional configuration of a camera head and a CCU. FIG. 29 is a block diagram showing an example of the schematic configuration of a vehicle control system. FIG. 29 is an explanatory diagram showing an example of the installation positions of an outside-vehicle information detection unit and an imaging unit.

[0017] Hereinafter, modes for carrying out the present technology (hereinafter referred to as embodiments) will be described.

[0018] <Example of Schematic Configuration of Imaging Device> Fig. 1 shows a schematic configuration of an imaging device according to the present disclosure. The present technology can be applied to imaging devices that capture images (imaging devices that capture color images), distance measuring devices that measure the distance to a subject, and the like. In the following description, an imaging device that captures color images will be used as an example, but the present technology can be widely applied to light detection devices that receive light and detect the amount of light.

[0019] 1 includes a pixel array section 3 in which pixels 2 are arranged in a two-dimensional array on a semiconductor substrate 12 made of, for example, silicon (Si) as a semiconductor, and a peripheral circuit section around the pixel array section 3. The peripheral circuit section includes a vertical drive circuit 4, a column signal processing circuit 5, a horizontal drive circuit 6, an output circuit 7, a control circuit 8, etc.

[0020] Each pixel 2 includes a photodiode as a photoelectric conversion element and a plurality of pixel transistors, each of which is made up of, for example, four MOS transistors: a transfer transistor, a selection transistor, a reset transistor, and an amplification transistor.

[0021] The pixel 2 can also have a shared pixel structure. This pixel sharing structure is composed of multiple photodiodes, multiple transfer transistors, one shared floating diffusion (floating diffusion region), and each shared pixel transistor. That is, in a shared pixel, the photodiodes and transfer transistors that make up multiple unit pixels share each other pixel transistor.

[0022] The control circuit 8 receives an input clock and data instructing the operation mode and the like, and outputs data such as internal information of the imaging device 1. That is, the control circuit 8 generates clock signals and control signals that serve as references for the operations of the vertical drive circuit 4, column signal processing circuit 5, horizontal drive circuit 6, etc., based on a vertical synchronization signal, a horizontal synchronization signal, and a master clock. The control circuit 8 then outputs the generated clock signals and control signals to the vertical drive circuit 4, column signal processing circuit 5, horizontal drive circuit 6, etc.

[0023] The vertical drive circuit 4 is configured with, for example, a shift register, selects a pixel drive wiring 10, supplies a pulse for driving the pixels 2 to the selected pixel drive wiring 10, and drives the pixels 2 row by row. That is, the vertical drive circuit 4 selects and scans each pixel 2 of the pixel array unit 3 row by row in the vertical direction, and supplies a pixel signal based on a signal charge generated in the photoelectric conversion unit of each pixel 2 according to the amount of received light to the column signal processing circuit 5 through the vertical signal line 9.

[0024] The column signal processing circuits 5 are arranged for each column of pixels 2, and perform signal processing such as noise removal for each pixel column on signals output from one row of pixels 2. For example, the column signal processing circuits 5 perform signal processing such as CDS (Correlated Double Sampling) for removing fixed pattern noise specific to the pixels and AD conversion.

[0025] The horizontal drive circuit 6 is configured, for example, by a shift register, and sequentially outputs horizontal scanning pulses to select each of the column signal processing circuits 5 in turn, causing each of the column signal processing circuits 5 to output a pixel signal to the horizontal signal line 11.

[0026] The output circuit 7 processes and outputs signals sequentially supplied from each of the column signal processing circuits 5 through the horizontal signal line 11. The output circuit 7 may perform only buffering, or may perform black level adjustment, column variation correction, various digital signal processing, etc. The input / output terminal 13 exchanges signals with the outside.

[0027] The imaging device 1 configured as described above is a CMOS image sensor called a column AD type, in which the column signal processing circuits 5 that perform CDS processing and AD conversion processing are arranged for each pixel column.

[0028] The imaging device 1 is a backside illuminated MOS imaging device in which light is incident from the backside of the semiconductor substrate 12 opposite to the front side on which pixel transistors are formed.

[0029] <Planar and cross-sectional configuration examples of imaging device> The left diagram in Fig. 2 shows 20 pixels 2 arranged in a 4 × 5 array in the pixel array section 3, and the right diagram shows an example of the arrangement of color filters 51 (Fig. 3). Fig. 3 is a diagram showing an example of the cross-sectional configuration of the pixel 2 taken along line a-a' in Fig. 2.

[0030] Referring to the cross-sectional configuration example of FIG. 3, the imaging device 1 includes a semiconductor substrate 12, a multilayer wiring layer formed on the surface side of the semiconductor substrate 12, and a support substrate (neither of which are shown).

[0031] The semiconductor substrate 12 is made of, for example, silicon (Si) and is formed to have a thickness of, for example, 1 to 6 μm. In the semiconductor substrate 12, for example, a P-type (first conductivity type) semiconductor region 41 and an N-type (second conductivity type) semiconductor region 42 are formed for each pixel 2, thereby forming a photodiode PD for each pixel. The P-type semiconductor regions 41 provided on both the front and back surfaces of the semiconductor substrate 12 also serve as hole charge accumulation regions for suppressing dark current.

[0032] As shown in FIG. 3, the imaging device 1 is configured by stacking an anti-reflection film 61, a transparent insulating film 46, a color filter 51, and an on-chip lens 52 on a semiconductor substrate 12 on which an N-type semiconductor region 42 constituting a photodiode PD is formed for each pixel 2.

[0033] An anti-reflection film 61 for preventing reflection of incident light is formed on the interface (light-receiving surface side interface) of the P-type semiconductor region 41 above the N-type semiconductor region 42 that serves as a charge storage region.

[0034] The anti-reflection film 61 has a layered structure in which, for example, a fixed charge film and an oxide film are stacked, and can be, for example, a high-dielectric-constant (High-k) insulating thin film formed by atomic layer deposition (ALD). Specifically, hafnium oxide (HfO), aluminum oxide (AlO), titanium oxide (TiO), STO (Strontium Titan Oxide), etc. can be used. In the example of FIG. 3 , the anti-reflection film 61 is configured by stacking a hafnium oxide film 62, an aluminum oxide film 63, and a silicon oxide film 64.

[0035] Furthermore, a light-shielding film 49 is formed between the pixels 2 so as to be stacked on the anti-reflection film 61. The light-shielding film 49 is a single-layer metal film made of titanium (Ti), titanium nitride (TiN), tungsten (W), aluminum (Al), tungsten nitride (WN), or the like. Alternatively, a laminated film of these metals (for example, a laminated film of titanium and tungsten, or a laminated film of titanium nitride and tungsten) may be used as the light-shielding film 49.

[0036] The transparent insulating film 46 is formed on the entire back surface (light incident surface) of the P-type semiconductor region 41. The transparent insulating film 46 is made of a material that is light-transmitting and insulating, and has a refractive index n1 that is smaller than the refractive index n2 of the semiconductor regions 41 and 42 (n1<n2). Examples of materials for the transparent insulating film 46 include silicon oxide (SiO), silicon nitride (SiN), silicon oxynitride (SiON), hafnium oxide (HfO), aluminum oxide (AlO), zirconium oxide (ZrO), tantalum oxide (TaO), titanium oxide (TiO), lanthanum oxide (LaO), praseodymium oxide (PrO), cerium oxide (CeO), neodymium oxide (NdO), and promethium oxide. (Pm2O3), samarium oxide (Sm2O3), europium oxide (Eu2O3), gadolinium oxide (Gd2O3), terbium oxide (Tb2O3), dysprosium oxide (Dy2O3), holmium oxide (Ho2O3), thulium oxide (Tm2O3), ytterbium oxide (Yb2O3), lutetium oxide (Lu2O3), yttrium oxide (Y2O3), resins, etc. can be used alone or in combination.

[0037] A color filter 51 is formed on the upper side of the transparent insulating film 46 including the light-shielding film 49. A red, green, or blue color filter 51 is formed for each pixel. The color filter 51 is formed by spin-coating a photosensitive resin containing a coloring material such as a pigment or dye. The red, green, and blue colors are arranged, for example, in a Bayer array, but may be arranged using other array methods. In the example of FIG. 3, a green (G) color filter 51 is formed in pixels 2-1-1 and 2-3-1, and a blue (B) color filter 51 is formed in pixels 2-2-1 and 2-4-1.

[0038] The height position of the light-shielding film 49 is not limited to a specific position, and may be between the color filters 51, inside the grooves formed in the semiconductor substrate 12, between the color filters 51 and the on-chip lenses 52, or between the on-chip lenses 52.

[0039] 2, the color filters 51 are arranged in a Bayer array, with a green (G) color filter 51 at the upper left, a blue (B) color filter 51 at the upper right, a red (R) color filter 51 at the lower left, and a B (G) color filter 51 at the lower right. If the four color filters 51 in a 2×2 arrangement shown in the right diagram of Fig. 2 are considered to be one unit, then multiple units are arranged consecutively in both the vertical and horizontal directions in the pixel array section 3.

[0040] 3 , an on-chip lens 52 is formed above the color filter 51 for each pixel 2. The on-chip lens 52 is made of a resin material such as a styrene-based resin, an acrylic-based resin, a styrene-acrylic copolymer resin, or a siloxane-based resin. The on-chip lens 52 condenses incident light, and the condensed light is efficiently incident on the photodiode PD via the color filter 51.

[0041] 2, an on-chip lens 52 is disposed on each pixel 2. If the square shown in the left diagram of FIG. 2 also represents the shape of the on-chip lens 52, an on-chip lens 52 of the same shape is disposed on each pixel 2.

[0042] 3 , the pixel 2 has an inter-pixel isolation portion 54 formed in the semiconductor substrate 12 to isolate the pixels 2 from each other. The inter-pixel isolation portion 54 is formed by forming a trench penetrating the semiconductor substrate 12 between the N-type semiconductor regions 42 that constitute the photodiodes PD, depositing an aluminum oxide film 63 on the inner surface of the trench, and further filling the trench with an insulator 55 when depositing a silicon oxide film 64.

[0043] The portion of the silicon oxide film 64 that fills the inter-pixel isolation portion 54 may be filled with polysilicon. In FIG. 3, the silicon oxide film 64 is formed integrally with the insulator 55.

[0044] By configuring such inter-pixel isolation portion 54, adjacent pixels 2 are completely electrically isolated from each other by insulator 55 embedded in the trench, thereby preventing electric charges generated inside semiconductor substrate 12 from leaking to adjacent pixels 2.

[0045] <Regarding the Occurrence of Ghosts and Flares> Causes of image quality degradation, such as ghosts and flares, will be described with reference to FIG.

[0046] 4 , a seal glass 81 and an infrared cut filter 82 are disposed on the light incident surface side of the imaging device 1. Light incident on the imaging device 1 generates diffracted and reflected light having a certain diffraction order (m) and diffracted reflection angle (θ) according to the formation pitch of the surface of the on-chip lens 52.

[0047] The diffracted reflected light is reflected by a seal glass 81 formed above the image sensor, and becomes reflected light containing visible light components. The light components that pass through the seal glass 81 are reflected by an infrared cut filter 82 formed further above the seal glass 81, and become reflected light containing a large amount of red components in the visible light range.

[0048] The light reflected by the sealing glass 81 and the infrared cut filter 82 travels back toward the image sensor, and some of its components are photoelectrically converted by the photodiode 42 of the image sensor. This can cause ghosts and flares, which can degrade the image quality of the image sensor 1.

[0049] 5 is a diagram for explaining the relationship between the size of the pixel 2 and the diffraction angle. In FIG. 5, an example is shown in which the pitch of the pixels 2 and the pitch at which the on-chip lenses 52 are formed are equal.

[0050] The diffraction order (m) and diffraction angle (θ) of the diffracted and reflected light can be expressed by the following equation (1): d×sinθ=m×λ (1)

[0051] In formula (1), d is the pixel size (referred to as cell size) and λ is the wavelength of incident light. From formula (1), it can be seen that when λ is constant, the number of possible diffraction orders m decreases as the cell size, which is the formation pitch of the on-chip lens, decreases, and the number of possible diffraction orders m increases as the cell size increases.

[0052] The formation pitch of the on-chip lenses is the cell size, but this can be rephrased as follows: a small cell size results in a small periodicity, and a large cell size results in a large periodicity. In other words, it can be seen that a small periodicity results in a decrease in the diffraction order m (the state shown in the left diagram of FIG. 5 ), and a large periodicity results in an increase in the diffraction order m (the state shown in the right diagram of FIG. 5 ).

[0053] This can be expressed graphically as shown in the graph in Figure 6. The horizontal axis of the graph in Figure 6 represents cell size, and the vertical axis represents reflectance. The upper graph in Figure 6 represents the sum of total reflection excluding zero-order light, and the lower graph represents the maximum value within the distribution excluding zero-order light. In Figure 6, the triangles represent the reflectance when red (R) light is incident, the squares represent the reflectance when green (G) light is incident, and the diamonds represent the reflectance when B (blue) light is incident.

[0054] From the graph shown at the top of FIG. 6, it can be seen that regardless of the color of the incident light, as the cell size increases, in other words, as the periodicity increases, the total reflection value tends to increase.

[0055] From the graph at the bottom of Figure 6, it can be seen that, regardless of the color of the incident light, as the cell size increases, in other words, as the periodicity increases, the intensity at one point tends to decrease. In other words, as the cell size decreases, the periodicity decreases, and the intensity of the reflected light converging on one order of light (at a specific angle) tends to increase.

[0056] From these facts, it can be seen that increasing the cell size and the periodicity are effective in suppressing the occurrence of flare and ghosting. However, in recent years, there has been an increasing need for smaller pixels 2 and an increase in the number of pixels, and it is therefore desirable to suppress the occurrence of flare and ghosting by methods other than increasing the cell size. Therefore, below, an image pickup device 1 that suppresses the occurrence of flare and ghosting by increasing the periodicity without increasing the cell size will be described.

[0057] <Regarding an imaging device with randomly arranged structural parts> An explanation will now be given of an imaging device 1 that can reduce high reflection intensity at specific angles and suppress image quality degradation due to flare and ghosting by increasing the periodicity of pixels 2.

[0058] In order to increase the periodicity of the pixels 2, the structures that make up the pixels 2 are randomly arranged. As will be described below, the structures include the on-chip lenses 52, color filters 51, recessed regions 48, reflective films 131, trenches 151, and the like. The periodicity will be described again with reference to FIG. 2 .

[0059] 2 schematically shows the on-chip lenses 52 arranged on the pixels 2, and all of the on-chip lenses 52 arranged on the pixels 2 are configured to have the same shape. In this case, the period of the on-chip lenses 52 is represented as a (1×1) period. The number before the multiplication in parentheses of the (1×1) period represents the period in the X direction (horizontal direction), and the number after the multiplication represents the period in the Y direction (vertical direction).

[0060] The color filter 51 arranged on the pixel 2 shown in the right diagram of Figure 2 is a repeat of green (G) and blue (B) or a repeat of red (R) and green (G) in the X direction, with two periods in either case. In the Y axis direction, it is a repeat of green (G) and red (R) or a repeat of blue (B) and green (G), with two periods in either case. Therefore, the color filter 51 has a (2 x 2) period.

[0061] 2 has a (1×1) period and a (2×2) period for the color filters 51, the period of the light-collecting structure of the image pickup device 1, which is made up of the on-chip lenses 52 and the color filters 51, is a (2×2) period. The light-collecting structure is defined as a structure related to light collection in the structure of the image pickup device 1, and is defined as a structure formed mainly between the on-chip lenses 52 and the wiring layer (not shown).

[0062] In order to increase the period of the light-collecting structure of the imaging device 1, it is possible to increase the period of the on-chip lenses 52 and / or the period of the color filters 51. Therefore, Fig. 7 describes a case where the period of the on-chip lenses 52 included in the light-collecting structure is increased.

[0063] 7, like FIG. 2, the left diagram illustrates on-chip lenses 52 arranged on pixels 2 arranged in the pixel array unit 3, and the right diagram illustrates color filters 51. The color filters 51 are arranged in an RGB arrangement, like the case shown in FIG. 2, and are arranged in a repeated manner with 2×2=4 pixels as one unit. That is, in this case, the period of the color filters 51 is a (2×2) period.

[0064] 7, the on-chip lenses 52 are a mixture of two types of shapes in plan view, one of which has the same shape as the pixel 2, and the other of which has a different shape from the pixel 2. If the pixel 2 has a rectangular shape in plan view, the on-chip lenses 52 include on-chip lenses formed in a rectangular shape and on-chip lenses formed in a shape other than a rectangular shape.

[0065] In FIG. 7, an on-chip lens formed in a rectangular shape is represented as an on-chip lens 52A, and an on-chip lens formed in a shape other than a rectangular shape is represented as an on-chip lens 52B.

[0066] It is assumed that more on-chip lenses 52A are arranged than on-chip lenses 52B, and that the on-chip lenses 52A have higher light-collecting performance than the on-chip lenses 52B. In the pixel array unit 3, the on-chip lenses 52A are basically arranged, but the on-chip lenses 52B are also arranged randomly.

[0067] By randomly arranging the on-chip lenses 52B in the pixel array unit 3, the periodicity of the on-chip lenses 52 on the pixel array unit 3 can be increased. For comparison, referring to FIG. 2, in the example shown in FIG. 2, only on-chip lenses 52A are arranged on the pixel array unit 3, resulting in a (1×1) period. In the example shown in FIG. 7, not only on-chip lenses 52A but also on-chip lenses 52B are arranged on the pixel array unit 3, thereby making it possible to change this period. Furthermore, by randomly arranging the on-chip lenses 52B themselves, the period can be increased.

[0068] In the example shown in FIG. 7, of the 20 pixels of 4×5, on-chip lenses 52B are arranged in seven pixels 2: pixel 2-2-1, pixel 2-3-2, pixel 2-1-3, pixel 2-2-3, pixel 2-4-3, pixel 2-3-4, and pixel 2-2-5.

[0069] When viewing the entire pixel array unit 3, the positions of the on-chip lenses 52B are random. Although they are random, the on-chip lenses 52B are not arranged in clusters, but are rather scattered to some extent on the pixel array unit 3. By randomly arranging the on-chip lenses 52B, which have a different shape from the on-chip lenses 52A, the period can be changed to a period other than (1×1), and the period can be changed to a larger period.

[0070] However, it is expected that differences in light-collecting performance will occur due to differences in the shapes of the on-chip lenses 52. The shape of the on-chip lenses 52B is set so that there is no difference (no effect) in optical characteristics such as sensitivity and oblique incidence characteristics between the pixel 2 in which the on-chip lenses 52A are arranged and the pixel 2 in which the on-chip lenses 52B are arranged, or the difference is within an acceptable range.

[0071] Alternatively, if a difference in characteristics occurs between the pixel 2 in which the on-chip lens 52A is arranged and the pixel 2 in which the on-chip lens 52B is arranged, the signal from the pixel 2 in which the on-chip lens 52B is arranged may be corrected in the subsequent signal processing to reduce the difference.

[0072] Since the characteristics of the pixel 2 may change due to differences in the shape of the on-chip lens 52, when the configuration is such that correction is performed in a later stage, the position at which the on-chip lens 52B is disposed must be set in advance and the pixel 2 to be corrected must be specified. Therefore, the on-chip lens 52B may be disposed with a certain degree of regularity so that the position at which the on-chip lens 52B is disposed can be specified.

[0073] Even if the on-chip lenses 52B are arranged with a certain degree of regularity, when viewed from above the pixel array section 3, they are arranged randomly and with a period of at least (1×1).

[0074] 7 , one block is made up of 15 pixels with a (3×5) period, where the period in the X direction is 3 periods and the period in the Y direction is 5 periods. Blocks with this (3×5) period are repeatedly arranged in the vertical and horizontal directions of the pixel array unit 3. In this case, the period of the on-chip lenses 52 is (3×5) periods, and the period of the color filters 51 is (2×2) periods, so the period of the light-collecting structure made up of the on-chip lenses 52 and the color filters 51 is (6×10) periods. The X period is 6 periods of 3×2, and the Y period is 10 periods of 5×2.

[0075] In the example shown in Fig. 2, the period of the light-condensing structure was (2 × 2), but in the example shown in Fig. 7, the period is (6 × 10), which is larger. As described with reference to Figs. 4 to 6, flare and ghosts can be suppressed by increasing the period, and therefore, according to the structure shown in Fig. 7, flare and ghosts can be suppressed.

[0076] Fig. 8 is a diagram showing an example of the cross-sectional configuration of the pixel 2 taken along the line bb' in Fig. 7. The on-chip lenses 52A and 52B have been described as having different shapes, but a specific example of the different shapes is when the on-chip lenses 52A and 52B have different sizes, as shown in Fig. 8.

[0077] In the cross-sectional configuration example of the imaging device 1a (which will be referred to as the first embodiment with the letter "a" added thereto in order to distinguish it from the other embodiments) shown in FIG. 8, the radius of curvature of the on-chip lens 52Ba arranged on the pixel 2-2-1 is formed to be smaller than the radius of curvature of the on-chip lens 52A arranged on the pixel 2-1-1, for example.

[0078] In the imaging device 1a, the period at which the on-chip lenses 52B are arranged is formed to be larger than the period of the color filters 51, so that the period size can be increased by the least common multiple of the structural periods of the on-chip lenses 52B and the color filters 51.

[0079] Even if the period at which the on-chip lenses 52B are arranged is the same as or smaller than the period of the color filters 51, the period of the reflection components on the surface of the on-chip lens on the light incident side becomes large, and flare and ghosting can be suppressed, albeit to a limited extent.

[0080] In this way, by configuring the on-chip lenses 52Ba of different sizes to be randomly arranged on the pixel array unit 3, the imaging device 1a can be configured to be capable of suppressing flare and ghosting.

[0081] <Block Configuration> The block configuration will be described with reference to Fig. 9. The pixel array unit 3 is divided into a plurality of blocks 101. For convenience of explanation, it is described as being divided into blocks, but this does not mean that the pixel array unit 3 is physically divided or that there are intervals between the blocks.

[0082] 9, the pixel array unit 3 is divided into blocks 101-1 to 101-8. Each block 101 is made up of 15 pixels 2 (3 x 5). As shown in FIG. 9, each block 101 is made up of the same shape and the same size.

[0083] An on-chip lens 52B is disposed on a pixel 2 that is disposed at a predetermined position in the block 101. For example, if an on-chip lens 52B is disposed on the pixel 2 located at the top left of the block 101-1, an on-chip lens 52B is also disposed on the pixel 2 located at the top left of the block 101 in the other blocks 101-2 to 101-8.

[0084] The same number of on-chip lenses 52B are arranged in each block 101. For example, if five on-chip lenses 52B are arranged in block 101-1, five on-chip lenses 52B are also arranged in the same positions in each of the other blocks 101-2 to 101-8.

[0085] The shape, size, and arrangement of the blocks 111 may be as shown in Fig. 10. The example shown in Fig. 10 is an example in which the pixel array unit 3 is divided into two types of blocks 111. Blocks 111-1, 111-2, 111-8, and 111-9 are vertically long blocks each consisting of 15 pixels 2 in a 3 x 5 array. Blocks 111-3 to 111-7 are horizontally long blocks each consisting of 12 pixels 2 in a 6 x 2 array.

[0086] 10, blocks 111 of different shapes or sizes may be mixed together. Blocks 111 formed with the same shape and size have on-chip lenses 52B arranged at the same positions within the block 111, and the same number of on-chip lenses 52B are arranged.

[0087] For example, five on-chip lenses 52B are arranged in each of blocks 111-1, 111-2, 111-8, and 111-9, and one of the on-chip lenses 52B is arranged on the pixel 2 located at the top left of each block 111. Similarly, for example, four on-chip lenses 52B are arranged in each of blocks 111-3 to 111-7, and one of the on-chip lenses 52B is arranged on the pixel 2 located at the top left of each block 111.

[0088] Although the example in FIG. 10 has been described in which two types of blocks 111 are mixed, it is also possible to configure the system so that two or more types of blocks 111 are mixed.

[0089] Even when multiple types of blocks 111 are used, the positions and the number of on-chip lenses 52B are the same within the same type of block 111. This is because, as described above, when a configuration is adopted in which signals from pixels 2 in which on-chip lenses 52B are arranged are corrected, it is possible to easily identify the positions at which the on-chip lenses 52B are arranged.

[0090] <Effects> The effect of randomly arranging the on-chip lenses 52B will be described with reference to Fig. 11 and Fig. 12. Fig. 11 and Fig. 12 are graphs comparing the results of a case where the on-chip lenses 52B are not arranged, i.e., a case where the on-chip lenses 52 are arranged as shown in Fig. 2, with the results of a case where the on-chip lenses 52B are arranged randomly as shown in Fig. 7, as a reference.

[0091] In the figure, white circles indicate reference data, and black circles indicate data when the on-chip lenses 52B are randomly arranged. In the reference imaging device 1, as shown in FIG. 2, the color filters 51 are arranged at a (2×2) period and the on-chip lenses 52 are arranged at a (1×1) period.

[0092] The imaging device 1 to be verified has color filters 51 arranged at a (2 × 2) interval and on-chip lenses 52 arranged at a (3 × 2) interval. The on-chip lenses 52 arranged at a (3 × 2) interval means that an on-chip lens 52B is arranged on one pixel 2 out of six pixels 2 (3 × 2).

[0093] The data is obtained when green light with a wavelength of 540 nm is incident on these imaging devices 1. The horizontal axis of the graph represents the diffraction angle in the X direction, and the vertical axis represents the intensity of the reflected light.

[0094] Referring to the graph shown in Figure 11, it can be seen that there is reflected light in the areas corresponding to zero-order light, first-order light, and second-order light. The reference reflection intensity of first-order light was 0.00324, and the reflection intensity of the object to be verified was 0.0025. From this result, it was confirmed that by randomly arranging the on-chip lenses 52B, the period becomes larger, and as a result, the reflection intensity is reduced by about 21%, resulting in an improvement.

[0095] Figure 12 is a graph that enlarges the area enclosed by the ellipse in Figure 11. It can be seen that in the case of a one-pixel period, the reflected light is strong in the first and second order portions. In the case of a two-pixel period, reflected light is emitted in the first, second, third, and fourth order portions, and it can be seen that compared to the case of a one-pixel period, the angles at which reflections occur are dispersed and the intensity of each reflected light is smaller.

[0096] Furthermore, in the case of a three-pixel period, reflected light is emitted in the first, second, third, fourth, fifth, and sixth orders, and compared to a two-pixel period, it can be seen that the angles at which reflections occur are dispersed and the intensity of each reflection is smaller.

[0097] In the case of a 6-pixel period, reflected light is emitted from the 1st to 10th orders, and it can be seen that compared to a 3-pixel period, the angles at which reflections occur are dispersed and the intensity of each reflection is smaller.

[0098] The imaging device 1 used for verification has a (2 x 2) period for the color filters 51 and a (3 x 2) period for the on-chip lenses 52, resulting in a (6 x 2) period for the light-condensing structure. The data obtained from this imaging device 1 corresponds to the data for the 6-pixel period in Figure 12, and reflected light occurs from the 1st to 10th orders, but the intensity of the reflected light is all small and the intensity appears scattered. It can also be seen that the 6-pixel period means that reflected light occurs in the parts corresponding to the 2nd and 3rd pixel periods.

[0099] In this way, it can be confirmed that by randomly arranging the on-chip lenses 52B, the period can be increased, the diffraction angles at which reflected light occurs can be dispersed, and the intensity of reflected light per diffraction angle can be weakened, thereby making it possible to suppress the occurrence of flare and ghosts.

[0100] In this way, by randomly arranging pixels 2 having different light-collecting structures among pixels 2 having the same light-collecting structure, it is possible to suppress the occurrence of flare and ghost.

[0101] Second Embodiment FIG. 13 is a diagram showing an example of a cross-sectional configuration of an imaging device 1b according to a second embodiment.

[0102] In the following description, the same components as those in the imaging device 1a of the first embodiment shown in Figures 7 and 8 are denoted by the same reference numerals, and their description will be omitted where appropriate. The planar configuration examples of the imaging device 1 of the second and subsequent embodiments are basically the same as the planar configuration example shown in Figure 7, and each embodiment will be described with reference to the cross-sectional configuration example taken along line bb' in Figure 7.

[0103] The imaging device 1b shown in FIG. 13 differs from the imaging device 1a shown in FIG. 8 in that the on-chip lens 52Bb is formed to be taller than the other on-chip lenses 52A, but is otherwise similar.

[0104] In order to increase the period, when different structures are arranged, the structures are on-chip lenses 52, and the size of the on-chip lenses 52 is increased in the height direction. In this way, the height may be changed as the configuration of the on-chip lenses 52Bb.

[0105] Although the example in FIG. 13 has been described in which the height of the on-chip lens 52Bb is higher than the other on-chip lenses 52A, it may also be configured so that the height is lower than the other on-chip lenses 52A.

[0106] In the imaging device 1b, the period at which the on-chip lenses 52B are arranged is formed to be larger than the period of the color filters 51, so that the period size can be increased by the least common multiple of the structural periods of the on-chip lenses 52B and the color filters 51.

[0107] Third Embodiment FIG. 14 is a diagram showing an example of a cross-sectional configuration of an imaging device 1c according to a third embodiment.

[0108] The imaging device 1c shown in Fig. 14 differs from the imaging device 1a shown in Fig. 8 in that an on-chip lens 52Bc is formed to have a different flatness compared to the other on-chip lenses 52A, but is otherwise similar. The on-chip lens 52Bc shown in Fig. 14 is formed to have a shape that is partially linear in cross section, whereas the other on-chip lenses 52A are arc-shaped.

[0109] In order to increase the period, when different structures are arranged, the structures are on-chip lenses 52, and the flattening ratio of the on-chip lenses 52 is set to a value larger than the flattening ratios of the other on-chip lenses 52. In this way, the flattening ratio may be changed as a configuration of the on-chip lenses 52Bc.

[0110] 14, an example has been described in which the flattening ratio of the on-chip lens 52Bc is different from that of the other on-chip lenses 52A, but a configuration in which the other on-chip lenses 52A are convex lenses and the on-chip lens 52Bc is a concave lens (FIG. 15) may also be used. Also, the on-chip lens 52Bc may be used as an inner lens.

[0111] In the imaging device 1c' shown in Fig. 15, the on-chip lens 52Bc' has a curved surface shape that is different from that of the other on-chip lenses 52A in the imaging device 1a shown in Fig. 8, but the other features are the same. In cross section, the other on-chip lenses 52A have a convex shape (positive second-order differential) in the light incident direction except for the lens boundary, but the on-chip lens 52Bc' has a partial concave shape in an area other than the lens edge. In this way, when different structures are arranged to increase the period, the local shape of the on-chip lens may be changed.

[0112] The on-chip lens 52Bc' having a partially concave shape as shown in Fig. 15 can be controlled by the design of the mask pattern in the lithography process during manufacturing, as shown in Fig. 16. Fig. 16 shows an example of the mask pattern and the finished on-chip lens 52. As shown in Fig. 16A, when a mask pattern 71 that covers the entire on-chip lens 52 is used, an on-chip lens 52 without a concave shape is formed.

[0113] 16B and 16C, when a mask pattern 71 in which a micropattern for forming a partial concave shape is cut out is used, a concave shape is formed in the on-chip lens 52. By changing the size, position, shape, etc. of the cut-out region of the mask pattern 71, a concave shape can be formed in the on-chip lens 52 at a desired position, size, and shape. This micropattern may be below the resolution limit of an exposure machine in the lithography process, and the concave shape can be formed by a partial photochemical reaction of the resist.

[0114] When a thermal reflow process is performed after forming a concave shape on the resist, the concave shape may disappear and the overall shape may become convex. Even in this case, the lens thickness becomes slightly thinner because the resist volume is reduced, and the height of the on-chip lens becomes lower, so the periodicity can be changed.

[0115] Although Figure 15 illustrates randomization of two types of shapes, according to this embodiment, it is also possible to randomize using multiple different micropattern designs, and this description does not limit the types.

[0116] The on-chip lenses 52A and 52B may have the same shape and size but may be made of different materials. This embodiment also includes a case where the on-chip lenses 52A and 52B are not formed, in other words, where the on-chip lenses 52A and 52B have a flat shape.

[0117] In the first to third embodiments, an example has been described in which the size and shape of the on-chip lens 52B are changed. The shape and size of the on-chip lens 52B can be changed during manufacturing to form a lens of a desired shape and size. Also, by separating the processes for making the on-chip lens 52A and the on-chip lens 52B, it is possible to form on-chip lenses 52 of different shapes and sizes.

[0118] In the imaging device 1c, the period at which the on-chip lenses 52B are arranged is formed to be larger than the period of the color filters 51, so that the period size can be increased by the least common multiple of the structural periods of the on-chip lenses 52B and the color filters 51.

[0119] Fourth Embodiment FIG. 17 is a diagram showing an example of a cross-sectional configuration of an imaging device 1d according to a fourth embodiment.

[0120] 17 has a configuration in which color filters 51 with different configurations are randomly arranged. Of the color filters 51 arranged in the pixel array unit 3, the color filters 51 that are arranged in large numbers are referred to as color filters 51A, and the color filters 51 that are arranged in small numbers and have a shape different from the other color filters 51 are referred to as color filters 51B. In the above-described embodiment, the explanation will continue assuming that the color filter 51A corresponds to the on-chip lens 52A and the color filter 51B corresponds to the on-chip lens 52B.

[0121] 17, the color filters 51 disposed in the pixels 2-1-1, 2-3-1, and 2-4-1 are color filters 51A, and the color filter 51 disposed in the pixel 2-2-1 is color filter 51B. The color filter 51B is formed to have a thicker film thickness than the color filter 51A.

[0122] The coding of the color filters 51 is determined by the specifications, but it is also possible to use color filters 51 of the same color but with different pigment concentrations. If the transmittance of the color filters 51 is different, it is possible to adjust the total transmittance by changing the film thickness, and by using such a technique, it is possible to configure the color filters 51A and 51B to have different film thicknesses.

[0123] 17, the B (blue) color filter 51 is the color filter 51B, but this description does not indicate that the color filter 51B is a blue color filter. The color filter 51B may be of any color, and is the color filter 51 of a color that matches the randomly arranged position.

[0124] The color filter 51B may be white (transparent). Alternatively, the color filter 51B may not be formed, and the transparent insulating film 46 may be formed in the region where the color filter 51 is to be formed.

[0125] When different structures are arranged to increase the period, the structures are color filters 51, and the film thickness of the color filters 51 is made thicker than the other color filters 51. The film thickness of the color filters 51B may be made thinner than the other color filters 51A. In this way, the film thickness of the color filters 51 may be changed to increase the periodicity.

[0126] In the imaging device 1d, the period at which the color filters 51, which are formed to have a large thickness, are arranged is formed to be larger than the period of the on-chip lenses 52, so that the period size can be increased by the least common multiple of the structural periods of the color filters 51 and the on-chip lenses 52.

[0127] The fourth embodiment can be combined with any of the first to third embodiments to form a configuration in which the color filters 51B and the on-chip lenses 52B are randomly arranged. In this case, the color filters 51B and the on-chip lenses 52B can be arranged in the same pixel 2, or in different pixels 2. In this case, the period of the color filters 51B can be increased, and the period of the on-chip lenses 52B can also be increased, so that a configuration can be achieved in which flare and ghosting can be further suppressed.

[0128] Fifth Embodiment FIG. 18 is a diagram showing an example of a cross-sectional configuration of an imaging device 1e according to a fifth embodiment.

[0129] 18 is configured such that the anti-reflection film 61 provided on some of the pixels 2 includes recessed regions 48 having a fine uneven structure. The imaging device 1e shown in FIG. 18 is configured such that the recessed regions 48 are randomly arranged.

[0130] The recessed region 48 is a region with a fine uneven structure formed at the interface (light-receiving surface-side interface) of the P-type semiconductor region 41 above the N-type semiconductor region 42, which serves as a charge storage region.

[0131] In the example shown in FIG. 18, a recessed region 48 is formed in pixel 2-2-1, but no recessed region 48 is formed in pixels 2-1-1, 2-3-1, and 2-4-1, and a flat anti-reflection film 61 is formed instead.

[0132] When different structures are arranged to increase the period, the structures are recessed regions 48, and pixels 2 with or without recessed regions 48 are randomly arranged. In this way, the period can be changed depending on whether or not a specific structure is present.

[0133] In the imaging device 1e, the period at which the recessed regions 48 are arranged is formed to be larger than the period of the color filters 51 and / or the on-chip lenses 52, so that the period size can be increased by the least common multiple of the structural periods of the recessed regions 48 and the color filters 51 and / or the on-chip lenses 52.

[0134] The fifth embodiment and the fourth embodiment can be combined to form a configuration in which the recessed regions 48 and the color filters 51B are randomly arranged. In this case, the recessed regions 48 and the color filters 51B can be arranged in the same pixel 2, or in different pixels 2. In this case, the period of the recessed regions 48 can be increased, and the period of the color filters 51B can also be increased, resulting in a configuration that can further suppress flare and ghosting.

[0135] Furthermore, the fifth embodiment can be combined with any of the first to third embodiments to form a configuration in which the recessed regions 48 and the on-chip lenses 52B are randomly arranged. In this case, the recessed regions 48 and the on-chip lenses 52B can be arranged in the same pixel 2, or in different pixels 2. In this case, the period of the recessed regions 48 can be increased, and the period of the on-chip lenses 52B can also be increased, resulting in a configuration that can further suppress flare and ghosting.

[0136] Furthermore, it is also possible to adopt a configuration in which the fifth embodiment, the fourth embodiment, and any of the first to third embodiments are combined. By adopting a configuration in which different structures, such as the recessed region 48, the color filter 51, and the on-chip lens 52, are randomly arranged, the period can be made larger, and a configuration can be achieved in which flare and ghosting can be further suppressed.

[0137] Sixth Embodiment FIG. 19 is a diagram showing an example of a cross-sectional configuration of an imaging device 1f according to a sixth embodiment.

[0138] An imaging device 1f shown in FIG. 19 has a configuration in which the pixel 2 is provided with a recessed region 48, and the recessed region 48 has a different shape.

[0139] The recessed region 48f-1 provided in pixel 2-1-1 has three valleys formed therein, the recessed region 48f-2 provided in pixel 2-2-1 has five valleys formed therein, the recessed region 48f-3 provided in pixel 2-3-1 has four valleys formed therein, and the recessed region 48f-4 provided in pixel 2-4-1 has three valleys formed therein. In this way, the recessed regions 48 have different numbers of valleys, and recessed regions 48 with different numbers of valleys can be randomly arranged within the pixel array section 3.

[0140] In order to increase the period, when different structures are arranged, the structures are recessed regions 48, and pixels 2 having different numbers of valleys in the recessed regions 48 are randomly arranged. In this way, by changing the shape of a specific structure, it is possible to achieve a configuration that can suppress flare and ghosting.

[0141] In the imaging device 1f, the period at which recessed regions 48 having the same number of valleys (recesses) are arranged is formed to be larger than the period of the color filters 51 and / or the on-chip lenses 52, so that the period size can be increased by the least common multiple of the structural periods of the recessed regions 48 and the color filters 51 and / or the on-chip lenses 52.

[0142] The sixth embodiment can be used in combination with the first to fourth embodiments, and can be applied in place of the fifth embodiment described above.

[0143] Seventh Embodiment FIG. 20 is a diagram showing an example of a cross-sectional configuration of an imaging device 1g according to an eighth embodiment.

[0144] 20 is configured such that pixels 2 each having a recessed region 48 are randomly arranged on the surface opposite to the light incident surface, on which a wiring layer (not shown) is arranged. In the example shown in FIG. 20, a recessed region 48g is formed in pixel 2-2-1, but recessed regions 48g are not formed in pixels 2-1-1, 2-3-1, and 2-4-1.

[0145] Of the light incident on the photoelectric conversion region, some reaches the bottom surface of the photoelectric conversion region and passes through to the wiring layer side. In particular, light in the infrared wavelength band easily reaches the bottom surface of the photoelectric conversion region, so if the recessed region 48f is not formed on the wiring layer side, there is a possibility that a large amount of light component will pass through to the wiring layer side.

[0146] 20 , by forming the recessed region 48g on the wiring layer side, light that reaches the wiring layer side can be reflected by the recessed region 48g and returned to the photoelectric conversion region. This makes it possible to increase the amount of light that can be trapped in the photoelectric conversion region. Providing the recessed region 48g makes it possible to improve sensitivity, particularly in pixels 2 that handle long-wavelength infrared light (IR), without increasing the thickness of the pixel 2, in other words, the thickness of the semiconductor substrate 12.

[0147] In order to control the reflected light of long wavelength light such as infrared light, it is effective to provide a recessed region 48g on the wiring layer side, and it can also be used as a randomly arranged structure to increase the period of the light-collecting structure.

[0148] When different structures are arranged to increase the period, the structures can be recessed regions 48g, and pixels 2 with or without recessed regions 48g can be randomly arranged. In this way, the period can be changed depending on whether or not a specific structure is present.

[0149] As in the sixth embodiment shown in Figure 19, it is also possible to provide a recessed region 48g on the wiring layer side for each pixel 2, and to configure the number of valleys in the recessed region 48g provided in each pixel 2 to be different.

[0150] A configuration may be adopted in which many pixels 2 having recessed regions 46g formed therein are arranged, and few pixels 2 having no recessed regions 46g formed therein are arranged. In this case, the configuration is such that the pixels 2 having no recessed regions 46g formed therein are arranged randomly.

[0151] In the imaging device 1g, the period at which the recessed regions 48g are arranged is formed to be larger than the period of the color filters 51 and / or the on-chip lenses 52, so that the period size can be increased by the least common multiple of the structural periods of the recessed regions 48g and the color filters 51 and / or the on-chip lenses 52.

[0152] It is also possible to combine the seventh embodiment with the fifth or sixth embodiment to form a configuration in which the recessed region 48 is formed on both the light incident surface side and the wiring layer side.

[0153] The seventh embodiment can also be combined with any of the first to fourth embodiments. By combining them, it is possible to increase the number of types of structures that are randomly arranged to increase the period, thereby making it possible to further increase the period and achieve a configuration that can suppress flare and ghosting.

[0154] Eighth Embodiment FIG. 21 is a diagram showing an example of a cross-sectional configuration of an imaging device 1h according to an eighth embodiment.

[0155] The imaging device 1h shown in Fig. 21 has a configuration in which pixels 2 each having a reflective film 131 are randomly arranged on the surface opposite to the light incident surface, that is, on the surface on which a wiring layer (not shown) is arranged, in the wiring layer. In the example shown in Fig. 21, the reflective film 131 is formed on pixel 2-2-1, but the reflective film 131 is not formed on pixel 2-1-1, pixel 2-3-1, and pixel 2-4-1.

[0156] The reflective film 131 can be formed of a material with light-blocking properties, such as tungsten (W) or aluminum (Al). The reflective film 131 can be formed of a material that reflects light. Forming the reflective film 131 can prevent light from leaking toward the wiring layer. Furthermore, similar to the recessed region 48g of the imaging device 1g in the seventh embodiment shown in FIG. 20, the reflective film 131 can also return light to the photoelectric conversion region, thereby improving photoelectric conversion efficiency. The reflective film 131 may be formed by processing the metal material that forms the wiring layer.

[0157] In the eighth embodiment, it is desirable to design the wiring layer so that the parasitic capacitance is approximately the same for each pixel. Alternatively, fluctuations in the parasitic capacitance of the wiring may be corrected by signal processing. Note that if the metal material is in an electrically floating state, charge may accumulate, causing arcing and potentially damaging the element. Therefore, if the reflective film 131 is made of a metal material, it is desirable to ground it to the ground of the semiconductor substrate 12, for example.

[0158] Although the reflective film 131 has been described, it may be a film made of a material that absorbs light, and may have a structure that prevents light from leaking to the wiring layer side by absorbing light.

[0159] When different structures are arranged to increase the period, the structures may be reflective films 131, and pixels 2 with or without the reflective films 131 may be randomly arranged. In this way, the period may be changed depending on whether or not a specific structure is present.

[0160] A configuration may be adopted in which many pixels 2 on which the reflective film 131 is formed are arranged, and few pixels 2 on which the reflective film 131 is not formed are arranged. In this case, the configuration is such that the pixels 2 on which the reflective film 131 is not formed are arranged randomly.

[0161] In the imaging device 1h, the period at which the reflective film 131 is arranged is formed to be larger than the period of the color filter 51 and / or the on-chip lens 52, so that the period size can be increased by the least common multiple of the structural periods of the reflective film 131 and the color filter 51 and / or the on-chip lens 52.

[0162] 19 , it is also possible to provide a reflective film 131 for each pixel 2 on the wiring layer side, and to configure the reflective film 131 for each pixel 2 so that the shape and material of the reflective film 131 are different. As for the shape of the reflective film 131, for example, the reflective film 131 may be formed so that the length of the reflective film 131 is different. As for the difference in material, it is also possible to mix the reflective film 131 made of a material that reflects light and the reflective film 131 made of a material that absorbs light.

[0163] It is also possible to combine the eighth embodiment with the seventh embodiment to form a configuration in which the recessed region 48 and the reflective film 131 are formed on the wiring layer side.

[0164] It is also possible to combine the eighth embodiment with the fifth or sixth embodiment to form a configuration in which a recessed region 48 is formed on the light incident surface side and a reflective film 131 is formed on the wiring layer side.

[0165] The eighth embodiment can also be combined with any of the first to fourth embodiments. By combining them, it is possible to increase the number of types of structures that are randomly arranged to increase the period, thereby making it possible to further increase the period and achieve a configuration that can suppress flare and ghosting.

[0166] The seventh and eighth embodiments are particularly effective for NIR (near-infrared spectroscopy). An NIR sensor may have a configuration in which an NIR filter or multiple filters are stacked. For such a configuration, a configuration in which the recessed region 48 and the reflective film 131 are provided on the wiring layer side is suitable for reducing the influence of diffracted and reflected light.

[0167] Ninth Embodiment FIG. 22 is a diagram showing an example of a cross-sectional configuration of an imaging device 1i according to a ninth embodiment.

[0168] The imaging device 1i shown in Fig. 22 has randomly arranged trenches 151. In the example shown in Fig. 22, the trench 151 is formed in the pixel 2-2-1, but the trench 151 is not formed in the pixels 2-1-1, 2-3-1, and 2-4-1.

[0169] The trench 151 provided in the pixel 2-2-1 is formed in a rectangular shape in cross section as shown in Fig. 22. The depth of the trench 151 is such that it does not reach the N-type semiconductor region 42, and the trench 151 is a concave member formed in the P-type semiconductor region 41.

[0170] The trench 151 is the interface between the anti-reflection film 61 and the transparent insulating film 46, and is formed in a shape having a depression in the depth direction when the surface on which the light-shielding film 49 is formed is used as the reference.

[0171] By providing the trench 151, it is possible to increase the optical path length of light incident on the pixel 2. The light incident on the pixel 2 hits the side surface of the trench 151, is reflected, hits the side surface of the inter-pixel isolation portion 54 located opposite, is reflected, and so on, repeatedly reflected, before being incident on the N-type semiconductor region 42 (photodiode). Repeated reflections increase the optical path length, and therefore a configuration can be achieved in which even light with a long wavelength, such as near-infrared light, can be efficiently absorbed.

[0172] When different structures are arranged to increase the period, the structures may be trenches 151, and pixels 2 with or without the trenches 151 may be randomly arranged. In this way, the period may be changed depending on whether or not a specific structure is present.

[0173] A configuration may be adopted in which many pixels 2 having trenches 151 formed therein are arranged, and few pixels 2 having no trenches 151 formed therein are arranged. In this case, the configuration is such that the pixels 2 having no trenches 151 formed therein are arranged randomly.

[0174] A structure may also be used in which the number of trenches 151 varies in cross section. In pixel 2-2-1 shown in Fig. 22, one trench 151 is formed in cross section, but it is also possible to use a structure in which pixels 2 having different numbers of trenches 151 are randomly arranged, such as in pixel 2-1-1 having two trenches 151 and pixel 2-3-1 having four trenches 151.

[0175] The trenches 151 having different depths may be arranged randomly.

[0176] 23 is a diagram illustrating the shape and size of the trench 151 in a plan view of the pixel 2. As shown in FIG. 23, the shape of the trench 151 can be a + or x shape. For example, in FIG. 23A, the trench 151 is in a + shape in a plan view, but in FIG. 23B, the + is slightly tilted, resulting in an x ​​shape. In this way, even if the trenches have the same shape, they can be made different shapes by tilting them differently, and can be used as randomly arranged structures to increase the period.

[0177] The trench 151 shown in Fig. 23B is formed larger than the trench 151 shown in Fig. 23A. In this way, the trenches 151 of different sizes may be configured to be randomly arranged in the pixel array section 3.

[0178] When different structures are arranged to increase the period, the structures may be trenches 151, and the shape, size, number, etc. of the trenches 151 may be changed.

[0179] In the imaging device 1i, the period at which the trenches 151 are arranged is formed to be larger than the period of the color filters 51 and / or the on-chip lenses 52, so that the period size can be increased by the least common multiple of the structural periods of the trenches 151 and the color filters 51 and / or the on-chip lenses 52.

[0180] It is also possible to combine the ninth embodiment with the seventh and / or eighth embodiment to form a configuration in which the recessed region 48 and the reflective film 131 are formed on the wiring layer side.

[0181] The ninth embodiment can be combined with any of the first to eighth embodiments. By combining them, it is possible to increase the types of structures that are randomly arranged to increase the period, thereby making it possible to further increase the period and achieve a configuration that can suppress flare and ghosts.

[0182] 3 again, there is a light-shielding film 49 between the pixels 2. The light-shielding film 49 is formed in a lattice shape in plan view as shown in Fig. 24. The light-shielding film 49 is formed between the pixels 2 with approximately the same width in the vertical and horizontal directions.

[0183] In the figure, the white squares surrounded by the light-shielding film 49 indicate the openings of the pixels 2. In the configuration shown in Fig. 24, the openings are all formed to be approximately the same size. In this case, the periodicity is the area surrounded by the dotted square in Fig. 24, and therefore the period is (1 x 1). The following description will be given assuming that the line width of the light-shielding film 49 in Fig. 24 is a normal line width and the size of the openings is a normal size.

[0184] Fig. 25 shows a configuration example of an imaging device 1j in which randomness is imparted to the light-shielding film 49. In the configuration example shown in Fig. 25, the line width of the light-shielding film 49 includes parts that are formed wider than the normal line width and parts that are formed thinner, and the openings are also configured to include parts that are larger and smaller than the normal size.

[0185] Here, the description will be given taking the light-shielding film 49 formed in the vertical direction in the figure as an example, but the same applies to the light-shielding film 49 formed in the horizontal direction in the figure. The light-shielding film 49-1 is formed with a thinner than normal line width, the light-shielding film 49-2 is formed with a thicker than normal line width, and the light-shielding film 49-3 is formed with a normal line width. The light-shielding film 49-3 is formed with a thicker than normal line width, the light-shielding film 49-5 has the same line width as the light-shielding film 49-2 but is formed with a thicker than normal line width, and the light-shielding film 49-6 has the same line width as the light-shielding film 49-3 but is formed with a normal line width.

[0186] The opening of pixel 2 between light-shielding film 49-1 and light-shielding film 49-2 is formed larger than the size of a normal opening. The opening of pixel 2 between light-shielding film 49-2 and light-shielding film 49-3 is formed to the size of a normal opening. The opening of pixel 2 between light-shielding film 49-4 and light-shielding film 49-5 is formed smaller than the size of a normal opening. The opening of pixel 2 between light-shielding film 49-2 and light-shielding film 49-2 is formed to the size of a normal opening.

[0187] In this way, the periodicity can be increased by varying the line width of the light-shielding film 49. In the example shown in Fig. 25, the period is (4 x 2), which is larger than the case shown in Fig. 24.

[0188] When different structures are arranged to increase the period, the structures may be light-shielding films 49, and pixels 2 formed with thick or thin line widths of the light-shielding films 49 may be arranged randomly. In this way, a configuration may be adopted in which the period is changed by the thickness of a specific structure.

[0189] In other words, when different structures are arranged to increase the period, the structures may be used as openings of the pixels 2, and pixels 2 having openings of large or small size may be randomly arranged. In this way, a configuration in which the period is changed by the size of a specific structure may be adopted.

[0190] Here, an example of changing the line width of the light-shielding film 49 has been explained, but it is also possible to ensure randomness and increase the periodicity by arranging light-shielding films 49 made of different materials, arranging light-shielding films 49 with different film thicknesses, or arranging areas where no light-shielding film 49 is formed.

[0191] The tenth embodiment can also be combined with any of the first to ninth embodiments. By combining them, it is possible to increase the types of structures that are randomly arranged to increase the period, thereby making it possible to further increase the period and achieve a configuration that can suppress flare and ghosts.

[0192] Eleventh Embodiment FIG. 26 is a diagram showing an example of the cross-sectional configuration of an imaging device 1k according to an eleventh embodiment.

[0193] The imaging device 1k shown in Fig. 26 has a CF wall 201. The CF wall 201 is formed in a direction perpendicular to the light incident surface, between the pixels 2 and between the color filters 51. The CF wall 201 has a two-layer structure of a waveguide 203 and a light-shielding film 49, as shown in Fig. 27 .

[0194] 27 shows CF walls 201-1 to 201-4. The CF walls 201-1 to 201-4 have the same configuration, with the CF wall 201-1 being composed of a waveguide 203-1 and a light-shielding film 49-1, the CF wall 201-2 being composed of a waveguide 203-2 and a light-shielding film 49-2, the CF wall 201-3 being composed of a waveguide 203-3 and a light-shielding film 49-3, and the CF wall 201-4 being composed of a waveguide 203-4 and a light-shielding film 49-4.

[0195] The waveguide 203 is formed of a material having a refractive index different from that of the color filter 51, and has the function of preventing light from leaking into adjacent pixels 2 and guiding light to the photoelectric conversion unit (N-type semiconductor region 42). The waveguide 203 is formed of, for example, an oxide film such as SiO2, a material with a low refractive index, or an air gap. The light-shielding film 49 is provided to prevent light from leaking into adjacent pixels 2.

[0196] When the CF walls 201-1 to 201-4 have the same structure as shown in Fig. 27, the periodicity is the part surrounded by the dotted square in Fig. 27, and therefore has a (1 x 1) period. The explanation will continue assuming that the material of the CF wall 201 in Fig. 27 is a normal material, the width (horizontal direction in the figure) of the CF wall 201 is a normal width, and the height (vertical direction in the figure) of the CF wall 201 is a normal height.

[0197] An example of a configuration in which the CF walls 201 are randomly arranged is shown in Fig. 28. In the example shown in Fig. 28A, the waveguides 203 of the randomly arranged CF walls 201 are made of a material different from a normal material. In the example shown in Fig. 28A, the material of the waveguide 203-3' of the CF wall 201-3' is formed of a material different from the material of the waveguide 203-2 of the CF wall 201-2, for example.

[0198] In this way, the periodicity can be increased by using different materials for the CF walls 201. In the example shown in Fig. 28A, the period is (4 x 1), which is larger than the case shown in Fig. 27.

[0199] In the configuration example shown in B of Fig. 28, the height of the CF wall 201 is configured to be lower than the normal height. In the example shown in B of Fig. 28, the height of the waveguide 203-3" of the CF wall 201-3" in the vertical direction is formed to be lower than the height of the waveguide 203-2 of the CF wall 201-2, for example, and therefore the height of the CF wall 201-3" is formed to be lower than the height of the other CF walls 201.

[0200] In this way, the periodicity can be increased by varying the height of the CF walls 201. In the example shown in Fig. 28B, the period is (4 x 1), which is larger than the case shown in Fig. 27.

[0201] In the configuration example shown in FIG. 28C, the width of the CF wall 201 in the horizontal direction is configured to be smaller than the normal width. In the example shown in FIG. 28B, the width of the CF wall 201-3''' is configured to be smaller than the width of the CF wall 201-2, for example.

[0202] In this way, the periodicity can be increased by varying the width of the CF walls 201. In the example shown in Fig. 28C, the period is (4 × 1), which is larger than the case shown in Fig. 27.

[0203] It is also possible to use a configuration that combines the configurations shown in Figures 28A, 28B, and 28C. For example, it is also possible to reduce the height of the CF walls 201 and arrange the CF walls 201 with reduced widths in a random manner.

[0204] Another example of the configuration in which the CF wall 201 has randomness is shown in Fig. 29. The configuration of the CF wall 201 shown in Fig. 29 is an example of the configuration in which there is no light-shielding film 49 and the waveguide 203 has a single-layer structure. For example, when it is desired to improve sensitivity, the CF wall 201 can be configured without providing the light-shielding film 49.

[0205] In the configuration example shown in A of Fig. 29, the material of the waveguide 203 of the CF wall 201 is different from a normal material. In the example shown in A of Fig. 29, the material of the waveguide 203-3' of the CF wall 201-3' is different from the material of the waveguide 203-2 of the CF wall 201-2, for example.

[0206] In this way, the periodicity can be increased by using different materials for the CF walls 201. In the example shown in Fig. 29A, the period is (4 x 1), which is larger than the case shown in Fig. 27.

[0207] In the configuration example shown in B of FIG. 29, the height of the CF wall 201 is configured to be lower than the normal height. In the example shown in B of FIG. 29, the height of the waveguide 203-3" of the CF wall 201-3" is formed lower than the height of the waveguide 203-2 of the CF wall 201-2, for example, and therefore the height of the CF wall 201-3" is formed lower than the height of the other CF walls 201.

[0208] In this way, the periodicity can be increased by varying the height of the CF walls 201. In the example shown in Fig. 29B, the period is (4 x 1), which is larger than the case shown in Fig. 27.

[0209] In the configuration example shown in FIG. 29C, the width of the CF wall 201 is configured to be smaller than the normal width. In the example shown in FIG. 29B, the width of the CF wall 201-3''' (waveguide 203-3''') is configured to be smaller than the width of the CF wall 201-2, for example.

[0210] In this way, the periodicity can be increased by varying the width of the CF walls 201. In the example shown in Fig. 29C, the period is (4 × 1), which is larger than the case shown in Fig. 27.

[0211] It is also possible to use a configuration that combines the configurations shown in Figures 29A, 29B, and 29C. For example, it is also possible to reduce the height of the CF walls 201 (waveguides 203) and arrange the CF walls 201 with reduced widths in a random arrangement.

[0212] 29 has been described taking as an example a case where the CF wall 201 is configured only by the waveguide 203, but if the CF wall 201 is configured only by the light-shielding film 49, this becomes the above-mentioned tenth embodiment. It is possible to apply the tenth embodiment to the eleventh embodiment, and vice versa, as appropriate.

[0213] Another example of a configuration in which the CF walls 201 are randomly arranged is shown in Fig. 30. In the example shown in Fig. 30A, areas where the CF walls 201 are not formed are arranged randomly. In the example shown in Fig. 30A, the CF walls 201-3 are not formed (the absence of the walls is indicated by the dotted line in the figure).

[0214] In the configuration example shown in Fig. 30B, regions where the waveguide 203 of the CF wall 201 is not formed (regions where only the light-shielding film 49 is formed) are randomly arranged. In the example shown in Fig. 30B, the waveguide 203-3 of the CF wall 201-3 is not formed (in the figure, the absence of the waveguide 203-3 is indicated by a dotted line).

[0215] In the configuration example shown in Fig. 30B, the regions of the CF wall 201 where the light-shielding film 49 is not formed (regions where only the waveguide 203 is formed) are randomly arranged. In the example shown in Fig. 30C, the light-shielding film 49-3 is not formed on the CF wall 201-3. The CF wall 201-3 is formed lower than the other CF walls 201 by the amount that the light-shielding film 49-3 is not formed.

[0216] In this way, the periodicity can be increased by arranging an area where the CF walls 201 are not formed. In the example shown in Fig. 30, the period is (4 x 1), which is larger than the case shown in Fig. 27.

[0217] When arranging different structures to increase the period, the structures can be CF walls 201, and the material of the CF walls 201 can be different from the material of the other CF walls 201, the height of the CF walls 201 can be made lower than the other CF walls 201, the width of the CF walls 201 can be made smaller than the other CF walls 201, or an area can be provided where no CF walls 201 are formed, and a configuration can be achieved in which these structures are arranged randomly in the pixel array section 3.

[0218] The pixel array section 3 may also be configured so that at least two or more of the following structures are randomly arranged: CF walls 201 made of a material different from the material of other CF walls 201; CF walls 201 that are shorter in height than other CF walls 201; CF walls 201 that are narrower in width than other CF walls 201; and areas where no CF walls 201 are formed.

[0219] The eleventh embodiment can be combined with any of the first to tenth embodiments. By combining them, it is possible to increase the types of structures that are randomly arranged to increase the period, thereby making it possible to further increase the period and achieve a configuration that can suppress flare and ghosts.

[0220] Twelfth Embodiment FIG. 31 is a diagram showing an example of a cross-sectional configuration of an imaging device 1m according to a twelfth embodiment.

[0221] The imaging device 1m according to the twelfth embodiment shown in FIG. 31 includes a polarizer 231. The polarizer 231 is formed in an opening above the photoelectric conversion element (N-type semiconductor region 42) and covers the upper surface (incident surface) of the photoelectric conversion element. The polarizer 231 may be, for example, a wire grid polarizer, and may be composed of multiple strips of conductive material with slits provided between them. A light-shielding film 49 may be provided to surround the periphery of the polarizing element 231. The height positions of the polarizing element 231 and the light-shielding film 4 from the wire grid 2 may be the same or different, and are not limited thereto.

[0222] The polarizer 231 passes polarized light having an electric field component perpendicular to the direction in which the conductive material extends, and suppresses the passage of polarized light having an electric field component parallel to the direction in which the conductive material extends. The conductive material of the polarizer 231 is, for example, a material with a small complex refractive index in the wavelength range to which the photoelectric conversion element is sensitive. Examples of such conductive materials include aluminum, copper, gold, silver, platinum, tungsten, and alloys containing these metals. Alternatively, the conductive material of the polarizer 231 may have a laminated structure of multiple conductive materials.

[0223] Fig. 32 is a diagram showing an example of the configuration of the polarizer 231. In Fig. 32, each rectangle represents one pixel 2. The pixels 2 are arranged in row and column directions in the pixel array section 3. For example, the arrangement is such that, with a block consisting of 2 rows and 2 columns of 0° pixels, 45° pixels, 90° pixels, and 135° pixels, whose polarization direction transmission axes differ from one another by 45°, are arranged as one unit, and the blocks are periodically arranged in a lattice (matrix) pattern in the row and column directions.

[0224] The angle of the transmission axis is not limited to these and can be any angle between 0° and 180°, and the number of types is not limited to four but may be two, three, or five or more. For example, normal analysis of a polarization sensor generally involves fitting the output response to the angle of the transmission axis with a sine function to determine the normal, but for this application, a combination of at least three or more independent angles is sufficient. Alternatively, even with only one type, for example, by providing a function to remove polarized light parallel to the horizontal plane from light reflected from the water surface, such as sunlight, the effect of improving the field of view can be obtained.

[0225] The pixel array unit 3 may include pixels that do not have a polarizer 231. It is obvious that the output of a pixel that does not have a polarizer 231 has a correlation with the integral value of all transmission axis angles, and it is possible to obtain the basis of a sine function in normal analysis. Alternatively, information related to polarization can be analyzed from the output of a pixel that has a polarizer 231, and the output of a pixel that does not have a polarizer 231 can be used in image processing to create an image.

[0226] FIG. 32 shows 16 pixels 2 (4 blocks of pixels 2) arranged in a 4×4 array in the pixel array section 3, and the angle of the transmission axis of the pixel 2 shown in the lower left of the figure is indicated.

[0227] One block consisting of four pixels 2 is made up of pixels 2 in which polarizers 231 whose transmission axes are set at, for example, 0°, 45°, 90°, and 135° are arranged.

[0228] 32 shows an example in which a polarizer 231 with a transmission axis of 0° is arranged in the pixel 2 arranged in the upper left of one block, and a polarizer 231 with a transmission axis of 45° is arranged in the pixel 2 arranged in the upper right. Furthermore, a polarizer 231 with a transmission axis of 90° is arranged in the pixel 2 arranged in the lower left, and a polarizer 231 with a transmission axis of 135° is arranged in the pixel 2 arranged in the lower right. Each pixel 2 transmits light whose direction is parallel to the transmission axis.

[0229] In the following description, the pixels 2 in which the angle of the transmission axis of the polarizer 231 is 0°, 45°, 90°, or 135° will be referred to as 0° pixels, 45° pixels, 90° pixels, or 135° pixels, respectively. Hereinafter, the angle of the transmission axis of the polarizer 231 will also be referred to as the polarization angle, as appropriate.

[0230] One block is made up of 2 × 2 four pixels 2 consisting of a 0° pixel, a 45° pixel, a 90° pixel, and a 135° pixel, and blocks with the same arrangement of polarizers 231 within that block are arranged at the upper left, upper right, lower left, and lower right in the example shown in Figure 32. When the arrangement of polarizers 231 is the same as that shown in Figure 32, the periodicity is the area surrounded by the dotted square in Figure 32, resulting in a (2 × 2) period.

[0231] Fig. 33 shows an example configuration of an imaging device 1m in which the arrangement of polarizers 231 is randomized. In the example configuration shown in Fig. 33, the arrangement of polarizers 231 in the block located at the bottom right is configured to be different from the arrangement of polarizers 231 in the blocks located at the top left, top right, and bottom left. The polarizer 231 in the block located at the bottom right has a 0° pixel at the top left, a 90° pixel at the top right, a 135° pixel at the bottom left, and a 45° pixel at the bottom right.

[0232] In this way, the periodicity can be increased by randomly arranging blocks with different arrangements of polarizers 231. In the example shown in Fig. 33, the period is (4 x 4), which is larger than the case shown in Fig. 32.

[0233] Fig. 34 shows another example configuration of an imaging device 1m in which the arrangement of polarizers 231 is randomized. In the example configuration shown in Fig. 34, 90° pixels are arranged in the upper right corner of the block arranged in the lower left. In other blocks, 45° pixels are arranged in the upper right corner. In this case, of the polarizers 231 arranged in 4 x 4 pixels (16 pixels), only some of the polarizers 231 are arranged with polarization angles that ignore regularity.

[0234] In the example shown in Figure 34, the polarizer 231 with a polarization angle arranged without any regularity is only for one pixel, but the polarizer 231 of two or more pixels may also be the target.

[0235] In this way, the periodicity can be increased by randomly arranging blocks with different arrangements of polarizers 231. In the example shown in Fig. 33, the period is (4 x 4), which is larger than the case shown in Fig. 32.

[0236] For ease of understanding, the polarization angles of the polarizer 231 are exemplified as 0° pixels, 45° pixels, 90° pixels, and 135° pixels, but the normal angles may be other combinations, and even no polarizer may be used. As mentioned above, there is a degree of freedom in setting the number of types.

[0237] Fig. 35 shows another example of the configuration of an imaging device 1m in which the arrangement of polarizers 231 is randomized. The example configuration shown in Fig. 35 shows an example of the arrangement of polarizers 231 in a case where one block is made up of 6 pixels in a 3 × 2 matrix. While the examples of the configurations shown in Fig. 32 to Fig. 34 were examples in which one block was made up of 4 pixels in a 2 × 2 matrix, it is also possible to increase the periodicity by making one block up of 6 pixels in a 3 × 2 matrix, as shown in Fig. 35.

[0238] When one block has six pixels, four polarizers 231, i.e., 0° pixel, 45° pixel, 90° pixel, and 135° pixel, may be used to form the six pixels, or two polarizers 231 with polarization angles other than these may be added so that all six pixels have different polarization angles. Adding polarizers with different polarization angles can improve the accuracy of sine function fitting when calculating the normal.

[0239] In this way, the periodicity can be increased by increasing the number of pixels that make up one block. In the example shown in Figure 35, the period is (3 x 2), which is larger than the case shown in Figure 32.

[0240] In the case of polarizer 231, by changing the arrangement (design) of the wire grid, it is possible to treat the polarizer 231 as having a different shape even if it has the same transmission axis. Consider polarizer 231A and polarizer 231B as shown in FIG. 36. In the configuration example shown in FIG. 36, polarizer 231A and polarizer 231B are designed as polarizers 231 with the same transmission axis, but differ in that the arrangement design of the wire grid is slightly shifted. As shown in the lower diagram of FIG. 36, when comparing the bottom lines of the wire grids, when the position of the bottom line of polarizer 231A is position a and the position of the bottom line of polarizer 231B is position b, position a is located lower than position b.

[0241] Polarizer 231A and polarizer 231B have almost the same transmittance on the transmission axis, but the wavefront of the light reflected by polarizer 231 is different, so flare ghosts can also be suppressed by randomly arranging these two.

[0242] Although a shifted example is shown here for ease of understanding, it is also possible to slightly modulate the line-and-space pitch or slightly change the line width. If output steps occur due to the different fabrication of these polarizers, a correction coefficient that eliminates the output step can be multiplied by signal processing.

[0243] When a different structure is arranged to increase the period, the structure may be a polarizer 231, and the polarizer 231 may be arranged in a different position from other parts. In this way, a configuration in which the period can be changed by the arrangement of a specific structure may be adopted.

[0244] As described above, the transmission axis of the polarizer 231 can be designed relatively freely. Therefore, as shown in Fig. 37, another arrangement example in which the polarizers 231 are arranged randomly is shown. Fig. 37A is basically the same as the arrangement example shown in Fig. 32, and shows an example in which four pixels, a 0° pixel, a 45° pixel, a 90° pixel, and a 135° pixel, are arranged in a (2 × 2) cycle.

[0245] Figure 37B shows an example in which one block is made up of four pixels (2x2), and the polarization angles of each pixel are slightly shifted to disrupt the periodicity and randomize the images. The block located in the upper left corner is made up of 120°, 165°, 30°, and 75° pixels, while the block to its right is made up of 125°, 170°, 35°, and 80° pixels. The other blocks also have different polarization angles.

[0246] When the polarizer 231 with the polarization angle is arranged in this way, normal analysis is possible by performing sine function fitting in the signal processing of each block.

[0247] The arrangement example of the polarizer 231 shown in Fig. 37C is a completely randomized example. The polarization angle can be shifted in any way, but taking into account the accuracy of sine function fitting, it is more desirable to sample at equal intervals between 0° and 180°.

[0248] The twelfth embodiment can be combined with any of the first to eleventh embodiments. By combining them, it is possible to increase the types of structures that are randomly arranged to increase the period, thereby making it possible to further increase the period and achieve a configuration that can suppress flare and ghosts.

[0249] Thirteenth Embodiment FIG. 38 is a diagram showing an example of a cross-sectional configuration of an imaging device in according to a thirteenth embodiment.

[0250] The imaging device 1n according to the thirteenth embodiment shown in FIG. 38 differs from the imaging devices 1 according to the other embodiments in that it includes a narrow-band filter layer 301 instead of the color filter 51.

[0251] The narrow-band filter layer 301 is provided with a narrow-band filter NB, which is an optical filter that transmits narrow-band light of a predetermined narrow wavelength band (narrow band), in each pixel 2. For example, a plasmon filter that utilizes surface plasmons, which is a type of metal thin-film filter using a thin film of metal such as aluminum, is used as the narrow-band filter NB. The transmission band of the narrow-band filter NB is set for each pixel 2. The type of transmission band (number of bands) of the narrow-band filter NB is arbitrary and is set to, for example, seven or more.

[0252] Here, narrow band refers to a wavelength band narrower than the transmission band of a conventional R (red), G (green), B (blue), or Y (yellow), M (magenta), C (cyan) color filter based on the three primary colors or color matching functions, or a conventional R (red), G (green), or B (blue) color filter.

[0253] The narrow band here may be achieved by performing signal processing on the outputs of multiple pixels with different transmission spectra, in addition to the narrow band transmission spectrum of the pixel output. Examples of signal processing include, but are not limited to, algorithms such as Tikhonov regularization. Hereinafter, pixels that receive light transmitted through the narrow band filter NB are referred to as multispectral pixels or MS pixels.

[0254] Next, a plasmon filter that can be used for the narrow band filter NB will be described with reference to Fig. 39. Fig. 39 shows an example of the configuration of a plasmon filter 321A with a hole array structure.

[0255] The plasmon filter 321A is configured by a plasmon resonator in which holes 332A are arranged in a honeycomb pattern in a metal thin film (hereinafter referred to as a conductor thin film) 331A.

[0256] Each hole 332A penetrates the conductive thin film 331A and acts as a waveguide. Generally, a waveguide has a cutoff frequency and cutoff wavelength determined by its shape, such as the side length and diameter, and light with a frequency lower than that (a wavelength higher than that) does not propagate. The cutoff wavelength of the hole 332A depends mainly on the opening diameter D1, and the smaller the opening diameter D1, the shorter the cutoff wavelength. The opening diameter D1 is set to a value smaller than the wavelength of the light to be transmitted.

[0257] On the other hand, when light is incident on the conductive thin film 331A in which holes 332A are periodically formed at a period shorter than the wavelength of the light, a phenomenon occurs in which light with a wavelength longer than the cutoff wavelength of the holes 332A is transmitted. This phenomenon is called the anomalous transmission of plasmons. This phenomenon occurs when surface plasmons are excited at the boundary between the conductive thin film 331A and the interlayer film 102 above it.

[0258] Here, the plasmon filter 321A having a hole array structure has been described as an example, but other plasmon filters include a dot array type plasmon filter, a plasmon filter using GMR (Guided Mode Resonant), and a plasmon filter having a bull's eye structure, and any of these plasmon filters can be applied to this embodiment.

[0259] A Fabry-Perot filter can also be used as the narrow-band filter layer 301. As shown in Figure 40, the Fabry-Perot filter 351 is an optical device consisting of two half mirrors 352 and 353, which are arranged facing each other and parallel to each other. The half mirrors 352 and 353 are finished with reflective surfaces that have high reflectivity and slight transmittance.

[0260] Light incident on one side of the Fabry-Perot filter 351 (the upper side in the figure) is reflected back and forth between the two reflecting surfaces many times, causing interference. The light transmitted through the semitransparent mirror 353 becomes a fairly long interference light due to the light having made multiple round trips with a certain optical path difference. Therefore, when this is used as a spectroscope, very high resolution can be obtained.

[0261] That is, similar to the plasmon filter 321 described above, the Fabry-Perot filter 351 can also select the wavelength of the incident light that is to be analyzed by the Fabry-Perot filter 351, and the selected light can be received by the photodiode.

[0262] Fig. 41 is a diagram showing an example of the arrangement of narrow-band filters NB in ​​the narrow-band filter layer 301. In Fig. 41, each square represents a pixel 2, and the numbers in the squares represent identifiers that identify the peak transmission wavelengths (referred to as transmission spectra).

[0263] 41 shows an example in which four blocks are arranged, each consisting of 16 pixels 2 (4×4). Sixteen channels, transmission spectra 1 to 16, are arranged in one block.

[0264] Transmission spectra 1 to 16 are narrowband filters NB that transmit light of different wavelengths. In one block, the first column is arranged from left to right in the figure with multispectral pixels of transmission spectrum 1, transmission spectrum 2, transmission spectrum 3, and transmission spectrum 4. The second column is arranged from left to right in the figure with multispectral pixels of transmission spectrum 5, transmission spectrum 6, transmission spectrum 7, and transmission spectrum 8.

[0265] In the third column, multispectral pixels of transmission spectrum 9, transmission spectrum 10, transmission spectrum 11, and transmission spectrum 12 are arranged in order from left to right in the figure. In the fourth column, multispectral pixels of transmission spectrum 13, transmission spectrum 14, transmission spectrum 15, and transmission spectrum 16 are arranged in order from left to right in the figure.

[0266] One block is made up of 16 multispectral pixels, each of which has 16 channels arranged in order from transmission spectrum 1 to 16. Blocks are arranged vertically and horizontally within each block, resulting in a (4x4) periodicity.

[0267] Fig. 42 shows an example configuration of an image capture device In in in which the arrangement of transmission spectrum filters (multispectral pixels) is randomized. In the example configuration shown in Fig. 42, dotted lines are shown dividing 16 pixels in a 4 x 4 array, but the arrangement of multispectral pixels (transmission spectra) within a block is random and does not follow any regularity. Furthermore, when viewed from an 8 x 8 array of 64 pixels, the multispectral pixels are also arranged randomly.

[0268] In this way, by randomly arranging multispectral pixels throughout the pixel array unit 3, it is possible to obtain a dispersion effect for diffracted and reflected light. Multispectral pixels can use plasma filters or Fabry-Perot filters, but these tend to be made of metal or have a configuration that utilizes reflection, making them more susceptible to the effects of reflected light. However, by applying this technology and randomly arranging multispectral pixels, it is possible to obtain a dispersion effect for diffracted and reflected light.

[0269] As shown in Figure 42, if multispectral pixels are randomly arranged among all the pixels in the pixel array unit 3, there is a possibility that the amount of signal processing in the subsequent stages will increase. However, even if a configuration is adopted in which multispectral pixels for all channels (16 channels in this case) are arranged within one block, thereby reducing the amount of signal processing, the effect of dispersing diffracted and reflected light can be obtained. An example of such a configuration is shown in Figure 43.

[0270] The configuration example shown in Fig. 43 shows four 2 x 2 blocks, with 16 multispectral pixels arranged in a 4 x 4 array in each block. Multispectral pixels for 16 channels, with transmission spectra 1 to 16, are arranged in one block. Adjacent blocks have different arrangements.

[0271] For example, if the transmission spectra in the block shown in the upper left are listed from the top left to the bottom right, the transmission spectra are 10, 6, 7, 16, 12, 3, 1, 13, 11, 9, 8, 5, 7, 2, 16, 14, whereas the transmission spectra in the block shown in the upper right are 14, 6, 15, 4, 5, 11, 2, 8, 9, 7, 3, 12, 13, 16, 10, 1, which is a different arrangement.

[0272] By including the required channels in one block in this way, it is possible to ensure uniformity in the demosaicing process and obtain the effect of dispersing diffracted and reflected light.

[0273] In this way, by randomly arranging the multispectral pixels, it is possible to increase the periodicity.

[0274] Even in the regular arrangement of multispectral pixels shown in Fig. 41, the periodicity can be increased by, for example, using a different configuration for each block. For example, the periodicity can be increased even in an arrangement in which a given block is configured with multispectral pixels equipped with a plasmon filter and an adjacent block is configured with multispectral pixels equipped with a Fabry-Perot filter.

[0275] For example, the periodicity can be increased by arranging a certain block with multispectral pixels equipped with hole array type plasmon filters and an adjacent block with multispectral pixels equipped with dot array type plasmon filters.

[0276] For example, the periodicity can be increased even if all the multispectral pixels in a given block are configured with multispectral pixels equipped with hole array type plasmon filters, and at least one multispectral pixel in an adjacent block is configured with a multispectral pixel equipped with a dot array type plasmon filter.

[0277] By changing the combination of such narrow band filters NB, the periodicity can be increased.

[0278] The plasmon filters 321 can have different designs even if they have the same transmission spectrum. A case where randomness is imparted by arranging plasmon filters 321 with different designs will now be described. FIG. 44 shows another example of a configuration in which randomness is imparted to the arrangement of the plasmon filters 321. Each of the plasmon filters 321A shown in FIG. 44A, plasmon filter 321B shown in FIG. 44B, plasmon filter 321C shown in FIG. 44C, and plasmon filter 321D shown in FIG. 44D has holes of the same diameter arranged in the same pattern and is designed to have the same transmission spectrum, but each has a different design.

[0279] In this case, the wavefronts of the light reflected by each of plasmon filters 321A to 321D are different, so flare ghosts can also be suppressed by randomly arranging these.

[0280] Figure 45 shows an example of an arrangement of plasmon filters 321 that form eight transmission spectrum channels. The subscripts a and b in the arrangement example shown in Figure 45B represent the same transmission spectrum and represent a combination of plasmon filters 321 with different designs. The example shown in Figure 45A simply shows an arrangement of plasmon filters 321 each having eight transmission spectra, with 1 to 8 arranged in order. The example shown in Figure 45A has a (4 x 2) period.

[0281] Figure 45B shows an example in which plasmon filters 321 with the same transmission spectrum but different designs are arranged, as shown in Figure 44. In Figure 45B, for example, 1a and 1b are plasmon filters 321 with the same transmission spectrum but different designs. In the example shown in Figure 45B, as in the example shown in Figure 45A, 1 to 8 are arranged in order, but because plasmon filters 321 with different designs are arranged, the arrangement is randomized, resulting in a (4 x 8) period. In this case, too, the periodicity can be increased, and flare ghosts can be suppressed.

[0282] Here, we have explained examples in which the narrow-band filter NB is configured as a plasmon filter or a Fabry-Perot filter, but it is also possible to use, for example, a color filter 51 using a pigment, a color filter using a dye, or a filter with a structure in which these are stacked.

[0283] The thirteenth embodiment can be combined with any of the first to twelfth embodiments. By combining them, it is possible to increase the types of structures that are randomly arranged to increase the period, thereby making it possible to further increase the period and achieve a configuration that can suppress flare and ghosts.

[0284] Fourteenth Embodiment FIG. 46 is a diagram showing an example of a cross-sectional configuration of an imaging device 1p according to a fourteenth embodiment.

[0285] 46 differs from the imaging devices 1 according to the other embodiments in that it includes a metasurface element 401 instead of the color filter 51 and the on-chip lens 52. The metasurface element 401 is formed on a transparent insulating film 46.

[0286] 47, the metasurface element 401 may have a plurality of pillars 413 processed into a columnar shape arranged in a pixel 2, with different thicknesses, pitches, or shapes. By providing pillars in this manner, the phase difference of light changes locally, making it possible to control the direction of light according to the layout of the pillars 413.

[0287] The filler 421 is provided in the gaps between the pillars 413, and can prevent the pillars 413 from collapsing and tape from remaining during the assembly process. The filler 421 is not limited to being provided in the gaps between the pillars 413, but may also be provided so as to cover the pillars 413 on the light incident surface side of the pillars 413. A color filter layer may also be provided below the metasurface element 401.

[0288] The metasurface element 401 has a spectroscopic function and a polarizing function. The pillars 413 are minute (micro) structures with a size equal to or smaller than a predetermined wavelength of incident light, for example, a size equal to or smaller than the wavelength of visible light. The multiple pillars 413 are arranged side by side in the left-right direction (X-axis direction) in the figure. The multiple pillars 413 are arranged at intervals equal to or smaller than the predetermined wavelength of incident light, for example, a wavelength equal to or smaller than the wavelength of visible light.

[0289] The pillars 413 have a refractive index higher than that of the surrounding medium. The medium (filler 411) around the pillars 413 is, for example, silicon oxide (SiO), air (voids), or the like. In the examples shown in FIGS. 46 and 47 , the pillars 413 are made of a material having a refractive index higher than that of the filler 411. The pillars 413 are made of a high-refractive-index material and can also be called a high-refractive-index portion. The filler 411 can also be called a low-refractive-index portion.

[0290] The pillars 413 are formed using, for example, silicon nitride (SiN). Furthermore, the pillars 413 may be made of, for example, amorphous silicon, polysilicon, silicon compounds such as silicon nitride and silicon carbide, metal oxides such as titanium oxide, tantalum oxide, niobium oxide, hafnium oxide, indium oxide, and tin oxide, or composite oxides of these. The pillars 413, which are high refractive index portions, may be made of an organic material such as siloxane.

[0291] The metasurface element 401 can affect the wavefront by generating a phase delay in the incident light due to the difference between the refractive index of the pillars 413 and the refractive index of the surrounding medium. The metasurface element 401 can adjust the propagation direction of the light by applying different amounts of phase delay depending on the wavelength of the light, and separate the incident light into light of each wavelength range. The size, shape, refractive index, etc. of each pillar 413 are determined so that the light of each wavelength range contained in the incident light travels in the desired direction.

[0292] The metasurface element 401 is a spectroscopic element that can disperse light using metamaterial technology, and can also be called a splitter (color splitter). The propagation direction of light of each wavelength by the metasurface element 401 can be adjusted by the materials (optical constants) of the pillars 413 and the filler 411, the shape, height, and spacing (gap) of the pillars 413, etc. The metasurface element 401 can be used as an optical component that guides (propagates) light.

[0293] The metasurface element 401 has a degree of freedom in the anchor setting when designing a relative phase difference within a pixel. Even if the phase difference design of light within a pixel is the same, the degree of freedom in the anchor setting is high, so as shown in Figure 48, even if the metasurface element 401 has the same function, different pillar 413 shapes can be created by changing the anchor setting.

[0294] Figure 48 shows a configuration example in which metasurface elements 401 with anchor setting A are arranged on the pixel array section 3. In this case, since the periodicity is small, there is a possibility that the influence of diffracted reflected light will occur.

[0295] Figure 50 is a diagram showing an example of the arrangement of metasurface elements 401 when randomized and the periodicity is increased. In the arrangement example shown in Figure 50, metasurface elements 401 with anchor setting A and metasurface elements 401 with anchor setting B are arranged alternately. By arranging metasurface elements 401 with different anchor settings in this way, the period can be increased and the effects of diffracted reflected light can be reduced.

[0296] 50 shows an example in which metasurface elements 401 with anchor setting A and anchor setting B are arranged, but it is also possible to arrange metasurface elements 401 with anchor setting A, anchor setting B, and anchor setting C, or to arrange metasurface elements 401 with other anchor settings. In FIG. 50, an example in which metasurface elements 401 are arranged at a (2 × 2) period is shown, but it is also possible to configure the pixel array section 3 so that metasurface elements 401 with different shapes are arranged randomly.

[0297] In this way, the periodicity can be increased by randomly arranging the metasurface elements 401 with different anchor settings.

[0298] The fourteenth embodiment can be combined with any of the first to thirteenth embodiments. By combining them, it is possible to increase the types of structures that are randomly arranged to increase the period, thereby making it possible to further increase the period and achieve a configuration that can suppress flare and ghosting.

[0299] <Fifteenth embodiment> Fig. 51 is a diagram showing another configuration example of the on-chip lens 52. The upper diagram of Fig. 51 is a diagram showing a planar configuration example of the on-chip lens 52, and the lower diagram of Fig. 51 shows a cross-sectional configuration example of the on-chip lens 52 taken along line A-A' in the upper diagram of Fig. 51.

[0300] 51 is configured such that a pixel 2 in which one normal-sized on-chip lens 52a is arranged is mixed with a pixel 2 in which four small on-chip lenses 52b are arranged on one pixel 2. The normal-sized on-chip lens 52a is formed to a size such that one on-chip lens 52a covers the opening of one pixel 2.

[0301] In pixel 2-1-2, one regular on-chip lens 52a is arranged in plan view, and one regular on-chip lens 52a is also arranged in cross-section. In pixel 2-2-2, four small on-chip lenses 52b are arranged in plan view, and two small on-chip lenses 52b are arranged in cross-section. In the configuration example shown in FIG. 51 , the periodicity of the on-chip lenses 52 is four pixels 2 surrounded by dotted lines in the figure, resulting in a (2×2) period.

[0302] Figure 52 shows an example of the arrangement of on-chip lenses 52 when the periodicity is increased. In the arrangement example shown in Figure 52, the on-chip lens 52c arranged on pixel 2-3-2 is formed to have a smaller shape than the normal on-chip lens 52a. In this way, by randomly arranging on-chip lenses 52 with different shapes, the periodicity can be increased. In the example of Figure 52, the period is (4 x 3), which is larger than the case shown in Figure 51.

[0303] The randomly arranged on-chip lenses 52 may have shapes with different sizes, heights, or flatness ratios, as described with reference to the second embodiment (FIG. 13) and the third embodiment (FIG. 14).

[0304] Fig. 53 is a diagram showing yet another example of the planar configuration of the on-chip lens 52. The on-chip lens 52 shown in Fig. 53 has a configuration in which a pixel 2 in which two elliptical on-chip lenses 52d are arranged and a pixel 2 in which four small on-chip lenses 52b are arranged on one pixel 2 are mixed.

[0305] For example, two on-chip lenses 52d each having an elliptical shape in a plan view are arranged in pixel 2-1-2. Four small on-chip lenses 52b are arranged in pixel 2-2-2 in a plan view. In the configuration example shown in FIG. 53, the on-chip lenses 52 are arranged periodically at four pixels 2 surrounded by dotted lines in the figure, resulting in a (2 × 2) period.

[0306] FIG. 54 shows an example of the arrangement of on-chip lenses 52 when the periodicity is increased. In the arrangement example shown in FIG. 54, the on-chip lens 52a arranged on pixel 2-3-2 is a normal on-chip lens 52a, and is formed in a different shape from the on-chip lenses 52b and on-chip lenses 52d arranged on other pixels 2. In this way, by randomly arranging on-chip lenses 52 with different shapes, the periodicity can be increased. In the example of FIG. 54, the period is (4×3), which is larger than the case shown in FIG. 51.

[0307] In the example shown in FIG. 54 , the randomly arranged on-chip lenses 52 may have shapes with different sizes, heights, or flatness ratios, as described with reference to the second embodiment ( FIG. 13 ) and the third embodiment ( FIG. 14 ).

[0308] In this way, by randomly arranging the on-chip lenses 52 having different shapes, heights, materials, etc., it is possible to increase the periodicity.

[0309] As described above, when on-chip lenses 52 of different sizes are arranged, the example described with reference to Figure 51 shows a case where a pixel 2 in which one normal-sized on-chip lens 52a is arranged and a pixel 2 in which four small on-chip lenses 52b are arranged on one pixel 2 are mixed. The normal-sized on-chip lens 52a and the pixel 2 have a one-to-one relationship, and the small on-chip lens 52b and the pixel 2 have a four-to-one relationship. Other relationships between the on-chip lens 52 and the pixel will be described with reference to Figure 55.

[0310] 55 , a configuration is used in which pixels 2 in which one on-chip lens 52e is arranged and pixels 2 in which one large on-chip lens 52d is arranged on four pixels 2 are mixed. In this case, there is a one-to-one relationship between the on-chip lenses 52e and the pixels 2, and a one-to-four relationship between the on-chip lenses 52d and the pixels 2. Even when there is such a relationship between the on-chip lenses 52 and the pixels 2, the configuration described with reference to FIG. 52 can be applied, and, for example, randomization can be achieved by arranging an on-chip lens 52e' that is smaller than the on-chip lens 52e, or by arranging an on-chip lens 52d' that is smaller than the on-chip lens 52d.

[0311] 55, in which on-chip lenses 52 of different sizes are arranged, for example, red color filters 51 are arranged in the four pixels 2 in the upper left of the figure where a large on-chip lens 52f is arranged, and blue color filters 51 are arranged in the four pixels 2 in the lower right of the figure where a large on-chip lens 52f is arranged. In this case, the red pixels 2 and the blue pixels 2 may be configured to be four pixels, 2 x 2, so that an image plane phase difference can be detected. In this case, green color filters 51 are arranged in the pixel 2 in the upper right and the pixel 2 in the lower left of the figure where a small on-chip lens 52e' is arranged, and the green pixels 2 are arranged with emphasis on resolution.

[0312] Similarly, another relationship between the on-chip lens 52 and the pixel 2 when an elliptical on-chip lens 52 is arranged as shown in FIG. 53 will be described with reference to FIG. 56 . A configuration is adopted in which a pixel 2 in which one on-chip lens 52e is arranged and a pixel 2 in which one large elliptical on-chip lens 52g is arranged over two pixels 2 are mixed. In this case, the on-chip lens 52e and the pixel 2 have a one-to-one relationship, and the on-chip lens 52g and the pixel 2 have a one-to-two relationship. Even when there is such a relationship between the on-chip lens 52 and the pixel 2, randomization can be achieved, for example, by arranging an on-chip lens 52e' that is smaller than the on-chip lens 52e, or by arranging an on-chip lens 52g' that is smaller than the on-chip lens 52g and has an elliptical shape.

[0313] 56 , in an arrangement of on-chip lenses 52 of different sizes, for example, a red color filter 51 is disposed in the pixel 2 in the upper left of the figure, where an elliptical on-chip lens 52g is disposed, and a blue color filter 51 is disposed in the pixel 2 in the lower right of the figure, where an elliptical on-chip lens 52g is disposed. In this case, the red pixel 2 and the blue pixel 2 may be configured as four pixels, each of which is a 2×2 matrix, with two 2×1 pixels disposed above and below each other, so that an image plane phase difference can be detected. In this case, a green color filter 51 is disposed in the pixel 2 in the upper right and the pixel 2 in the lower left of the figure, where a small on-chip lens 52e' is disposed, and the green pixel 2 is disposed with emphasis on resolution.

[0314] In the example of the arrangement shown in Fig. 55, for example, randomization can be achieved by partially arranging the elliptical on-chip lenses 52g shown in Fig. 56. Also, in the example of the arrangement shown in Fig. 56, for example, randomization can be achieved by partially arranging the circular on-chip lenses 52f, one of which is arranged for every four pixels shown in Fig. 55.

[0315] The fifteenth embodiment can be combined with any of the first to fourteenth embodiments. By combining them, it is possible to increase the types of structures that are randomly arranged to increase the period, thereby making it possible to further increase the period and achieve a configuration that can suppress flare and ghosts.

[0316] The first to fifteenth embodiments can be applied to a color sensor, a black-and-white sensor, a visible light sensor, a near-infrared spectroscopy (NIR) sensor, an ultraviolet light (UV) sensor, an event-based vision sensor (EVS), and the like.

[0317] <Application Examples to Electronic Devices> The present technology is applicable to general electronic devices that use an imaging element in an image capture unit (photoelectric conversion unit), such as imaging devices such as digital still cameras and video cameras, portable terminal devices with imaging functions, copiers that use an imaging element in an image reading unit, etc. The imaging element may be formed as a single chip, or may be in the form of a module having an imaging function in which the imaging unit and a signal processing unit or an optical system are packaged together.

[0318] FIG. 57 is a block diagram showing an example configuration of an imaging device as an electronic device to which the present technology is applied.

[0319] 57 includes an optical unit 1001 including a lens group and the like, an image sensor (image capturing device) 1002, and a DSP (Digital Signal Processor) circuit 1003, which is a camera signal processing circuit. The image sensor 1000 also includes a frame memory 1004, a display unit 1005, a recording unit 1006, an operation unit 1007, and a power supply unit 1008. The DSP circuit 1003, frame memory 1004, display unit 1005, recording unit 1006, operation unit 1007, and power supply unit 1008 are interconnected via a bus line 1009.

[0320] The optical unit 1001 takes in incident light (image light) from a subject and forms an image on the imaging surface of the image sensor 1002. The image sensor 1002 converts the amount of incident light formed on the imaging surface by the optical unit 1001 into an electrical signal on a pixel-by-pixel basis and outputs the signal as a pixel signal.

[0321] The display unit 1005 is configured with a thin display such as an LCD (Liquid Crystal Display) or an organic EL (Electro Luminescence) display, and displays moving images or still images captured by the imaging element 1002. The recording unit 1006 records the moving images or still images captured by the imaging element 1002 on a recording medium such as a hard disk or semiconductor memory.

[0322] An operation unit 1007, under user operation, issues operation commands for various functions of the image sensor 1000. A power supply unit 1008 appropriately supplies various types of power to the DSP circuit 1003, frame memory 1004, display unit 1005, recording unit 1006, and operation unit 1007 as operating power sources.

[0323] The imaging device 1 according to the first to tenth embodiments can be applied to a part of the imaging device shown in FIG.

[0324] <Application Example to Endoscopic Surgery System> The technology according to the present disclosure (the present technology) can be applied to various products. For example, the technology according to the present disclosure may be applied to an endoscopic surgery system.

[0325] FIG. 58 is a diagram showing an example of a schematic configuration of an endoscopic surgery system to which the technology according to the present disclosure (the present technology) can be applied.

[0326] Figure 58 shows an operator (doctor) 11131 performing surgery on a patient 11132 on a patient bed 11133 using an endoscopic surgery system 11000. As shown in the figure, the endoscopic surgery system 11000 is composed of an endoscope 11100, other surgical tools 11110 such as an insufflation tube 11111 and an energy treatment tool 11112, a support arm device 11120 that supports the endoscope 11100, and a cart 11200 on which various devices for endoscopic surgery are mounted.

[0327] The endoscope 11100 is composed of a lens barrel 11101, a region of a predetermined length from the tip of which is inserted into a body cavity of a patient 11132, and a camera head 11102 connected to the base end of the lens barrel 11101. In the example shown, the endoscope 11100 is configured as a so-called rigid scope having a rigid lens barrel 11101, but the endoscope 11100 may also be configured as a so-called flexible scope having a flexible lens barrel.

[0328] An opening into which an objective lens is fitted is provided at the tip of the lens barrel 11101. A light source device 11203 is connected to the endoscope 11100, and light generated by the light source device 11203 is guided to the tip of the lens barrel by a light guide extending inside the lens barrel 11101, and is irradiated via the objective lens toward an object to be observed inside the body cavity of the patient 11132. The endoscope 11100 may be a direct-viewing endoscope, an oblique-viewing endoscope, or a side-viewing endoscope.

[0329] An optical system and an image sensor are provided inside the camera head 11102, and light reflected from the object of observation (observation light) is collected onto the image sensor by the optical system. The observation light is photoelectrically converted by the image sensor to generate an electrical signal corresponding to the observation light, i.e., an image signal corresponding to the observed image. The image signal is sent to a camera control unit (CCU) 11201 as RAW data.

[0330] The CCU 11201 is configured with a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), etc., and comprehensively controls the operations of the endoscope 11100 and the display device 11202. Furthermore, the CCU 11201 receives an image signal from the camera head 11102 and performs various types of image processing on the image signal, such as development processing (demosaic processing), to display an image based on the image signal.

[0331] Under the control of the CCU 11201, the display device 11202 displays an image based on an image signal that has been subjected to image processing by the CCU 11201.

[0332] The light source device 11203 is composed of a light source such as an LED (light emitting diode), and supplies irradiation light to the endoscope 11100 when photographing the surgical area, etc.

[0333] The input device 11204 is an input interface for the endoscopic surgery system 11000. A user can input various information and instructions to the endoscopic surgery system 11000 via the input device 11204. For example, the user inputs an instruction to change the imaging conditions (type of irradiation light, magnification, focal length, etc.) of the endoscope 11100.

[0334] The treatment tool control device 11205 controls the driving of the energy treatment tool 11112 for cauterizing tissue, incising, sealing blood vessels, etc. The insufflation device 11206 inflates the body cavity of the patient 11132 through the insufflation tube 11111 in order to ensure a clear field of view for the endoscope 11100 and a working space for the surgeon. The recorder 11207 is a device capable of recording various types of information related to the surgery. The printer 11208 is a device capable of printing various types of information related to the surgery in various formats such as text, images, or graphs.

[0335] The light source device 11203, which supplies illumination light to the endoscope 11100 when photographing the surgical site, can be configured from a white light source, such as an LED, a laser light source, or a combination of these. When the white light source is configured from a combination of RGB laser light sources, the output intensity and output timing of each color (each wavelength) can be controlled with high precision, allowing the light source device 11203 to adjust the white balance of the captured image. In this case, it is also possible to time-share images corresponding to each RGB by irradiating the object of observation with laser light from each RGB laser light source and controlling the drive of the image sensor of the camera head 11102 in synchronization with the irradiation timing. According to this method, color images can be obtained without providing a color filter to the image sensor.

[0336] Furthermore, the light source device 11203 may be controlled to change the intensity of light it outputs at predetermined time intervals. By controlling the driving of the image sensor of the camera head 11102 in synchronization with the timing of the change in light intensity to acquire images in a time-division manner and combining the images, it is possible to generate an image with a high dynamic range that is free from so-called blocked-up shadows and blown-out highlights.

[0337] The light source device 11203 may also be configured to supply light in a predetermined wavelength band corresponding to special light observation. Special light observation, for example, utilizes the wavelength dependence of light absorption in body tissues to irradiate light with a narrower band than the light irradiated during normal observation (i.e., white light), thereby capturing high-contrast images of specific tissues, such as blood vessels on the surface of mucous membranes, known as narrow-band imaging. Alternatively, special light observation may involve fluorescence observation, in which images are obtained using fluorescence generated by irradiating excitation light. Fluorescence observation may involve irradiating excitation light onto body tissues and observing the fluorescence from the tissue (autofluorescence observation), or by locally injecting a reagent such as indocyanine green (ICG) into the body tissue and irradiating the tissue with excitation light corresponding to the fluorescent wavelength of the reagent to obtain a fluorescent image. The light source device 11203 may be configured to supply narrow-band light and / or excitation light corresponding to such special light observation.

[0338] FIG. 59 is a block diagram showing an example of the functional configuration of the camera head 11102 and the CCU 11201 shown in FIG.

[0339] The camera head 11102 has a lens unit 11401, an imaging unit 11402, a drive unit 11403, a communication unit 11404, and a camera head control unit 11405. The CCU 11201 has a communication unit 11411, an image processing unit 11412, and a control unit 11413. The camera head 11102 and the CCU 11201 are connected to each other via a transmission cable 11400 so that they can communicate with each other.

[0340] The lens unit 11401 is an optical system provided at the connection portion with the lens barrel 11101. Observation light taken in from the tip of the lens barrel 11101 is guided to the camera head 11102 and enters the lens unit 11401. The lens unit 11401 is composed of a combination of multiple lenses including a zoom lens and a focus lens.

[0341] The imaging unit 11402 may include one imaging element (a so-called single-chip type) or multiple imaging elements (a so-called multi-chip type). When the imaging unit 11402 is configured as a multi-chip type, for example, each imaging element may generate an image signal corresponding to each of RGB, and a color image may be obtained by combining these signals. Alternatively, the imaging unit 11402 may be configured to have a pair of imaging elements for acquiring image signals for the right eye and the left eye corresponding to a 3D (dimensional) display. The 3D display allows the surgeon 11131 to more accurately grasp the depth of the biological tissue at the surgical site. Note that when the imaging unit 11402 is configured as a multi-chip type, multiple lens units 11401 may be provided corresponding to each imaging element.

[0342] Furthermore, the imaging unit 11402 does not necessarily have to be provided in the camera head 11102. For example, the imaging unit 11402 may be provided inside the lens barrel 11101, immediately after the objective lens.

[0343] The driving unit 11403 is configured by an actuator, and moves the zoom lens and focus lens of the lens unit 11401 by a predetermined distance along the optical axis under the control of the camera head control unit 11405. This allows the magnification and focus of the image captured by the imaging unit 11402 to be adjusted appropriately.

[0344] The communication unit 11404 is configured by a communication device for transmitting and receiving various types of information to and from the CCU 11201. The communication unit 11404 transmits the image signal obtained from the imaging unit 11402 to the CCU 11201 via the transmission cable 11400 as RAW data.

[0345] Furthermore, the communication unit 11404 receives a control signal for controlling the driving of the camera head 11102 from the CCU 11201 and supplies the control signal to the camera head control unit 11405. The control signal includes information on the imaging conditions, such as information specifying the frame rate of the captured image, information specifying the exposure value at the time of imaging, and / or information specifying the magnification and focus of the captured image.

[0346] The image capturing conditions such as the frame rate, exposure value, magnification, and focus may be appropriately specified by the user, or may be automatically set by the control unit 11413 of the CCU 11201 based on the acquired image signal. In the latter case, the endoscope 11100 is equipped with a so-called AE (Auto Exposure) function, AF (Auto Focus) function, and AWB (Auto White Balance) function.

[0347] The camera head control unit 11405 controls the driving of the camera head 11102 based on a control signal received from the CCU 11201 via the communication unit 11404 .

[0348] The communication unit 11411 is configured by a communication device for transmitting and receiving various information to and from the camera head 11102. The communication unit 11411 receives an image signal transmitted from the camera head 11102 via the transmission cable 11400.

[0349] Furthermore, the communication unit 11411 transmits to the camera head 11102 a control signal for controlling the driving of the camera head 11102. The image signal and the control signal can be transmitted by electrical communication, optical communication, or the like.

[0350] The image processing unit 11412 performs various image processing operations on the image signal, which is RAW data transmitted from the camera head 11102 .

[0351] The control unit 11413 performs various controls related to the imaging of the surgical site, etc. by the endoscope 11100 and the display of the captured image obtained by imaging the surgical site, etc. For example, the control unit 11413 generates a control signal for controlling the driving of the camera head 11102.

[0352] Furthermore, the control unit 11413 displays the captured image showing the surgical site, etc., on the display device 11202 based on the image signal subjected to image processing by the image processing unit 11412. At this time, the control unit 11413 may recognize various objects in the captured image using various image recognition technologies. For example, the control unit 11413 can recognize surgical tools such as forceps, specific biological parts, bleeding, mist generated when using the energy treatment tool 11112, etc., by detecting the shape and color of the edges of objects included in the captured image. When displaying the captured image on the display device 11202, the control unit 11413 may use the recognition results to superimpose various surgical support information on the image of the surgical site. By superimposing the surgical support information and presenting it to the surgeon 11131, the burden on the surgeon 11131 can be reduced and the surgeon 11131 can proceed with the surgery reliably.

[0353] The transmission cable 11400 connecting the camera head 11102 and the CCU 11201 is an electrical signal cable for electrical signal communication, an optical fiber for optical communication, or a composite cable of these.

[0354] In the illustrated example, communication is performed wired using a transmission cable 11400, but communication between the camera head 11102 and the CCU 11201 may also be performed wirelessly.

[0355] <Application to a Mobile Body> The technology according to the present disclosure (the present technology) can be applied to various products. For example, the technology according to the present disclosure may be realized as a device mounted on any type of mobile body, such as an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, personal mobility, an airplane, a drone, a ship, or a robot.

[0356] FIG. 60 is a block diagram showing a schematic configuration example of a vehicle control system, which is an example of a mobile object control system to which the technology of the present disclosure can be applied.

[0357] The vehicle control system 12000 includes a plurality of electronic control units connected via a communication network 12001. In the example shown in Fig. 60, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an outside-vehicle information detection unit 12030, an inside-vehicle information detection unit 12040, and an integrated control unit 12050. Also shown as functional components of the integrated control unit 12050 are a microcomputer 12051, an audio / video output unit 12052, and an in-vehicle network I / F (Interface) 12053.

[0358] The drivetrain control unit 12010 controls the operation of devices related to the drivetrain of the vehicle in accordance with various programs. For example, the drivetrain control unit 12010 functions as a control device for a drive force generating device for generating a drive force of the vehicle, such as an internal combustion engine or a drive motor, a drive force transmission mechanism for transmitting the drive force to the wheels, a steering mechanism for adjusting the steering angle of the vehicle, and a braking device for generating a braking force of the vehicle.

[0359] The body system control unit 12020 controls the operation of various devices equipped in the vehicle body according to various programs. For example, the body system control unit 12020 functions as a control device for a keyless entry system, a smart key system, a power window device, or various lamps such as headlamps, backup lamps, brake lamps, turn signals, and fog lamps. In this case, radio waves transmitted from a portable device that serves as a key or signals from various switches can be input to the body system control unit 12020. The body system control unit 12020 receives these radio waves or signals and controls the vehicle's door lock device, power window device, lamps, etc.

[0360] The outside-vehicle information detection unit 12030 detects information outside the vehicle equipped with the vehicle control system 12000. For example, an imaging unit 12031 is connected to the outside-vehicle information detection unit 12030. The outside-vehicle information detection unit 12030 causes the imaging unit 12031 to capture images outside the vehicle and receives the captured images. The outside-vehicle information detection unit 12030 may perform object detection processing or distance detection processing for people, cars, obstacles, signs, characters on the road surface, etc. based on the received images.

[0361] The imaging unit 12031 is an optical sensor that receives light and outputs an electrical signal corresponding to the amount of light received. The imaging unit 12031 can output the electrical signal as an image or as distance measurement information. The light received by the imaging unit 12031 may be visible light or invisible light such as infrared light.

[0362] The in-vehicle information detection unit 12040 detects information inside the vehicle. For example, a driver state detection unit 12041 that detects the state of the driver is connected to the in-vehicle information detection unit 12040. The driver state detection unit 12041 includes, for example, a camera that captures an image of the driver, and the in-vehicle information detection unit 12040 may calculate the degree of fatigue or concentration of the driver based on the detection information input from the driver state detection unit 12041, or may determine whether the driver is dozing off.

[0363] The microcomputer 12051 can calculate control target values ​​for the driving force generating device, steering mechanism, or braking device based on the information inside and outside the vehicle acquired by the outside-vehicle information detection unit 12030 or the inside-vehicle information detection unit 12040, and output control commands to the drive system control unit 12010. For example, the microcomputer 12051 can perform cooperative control aimed at realizing the functions of an ADAS (Advanced Driver Assistance System), including vehicle collision avoidance or impact mitigation, following driving based on the distance between vehicles, maintaining vehicle speed, vehicle collision warning, vehicle lane departure warning, etc.

[0364] In addition, the microcomputer 12051 can perform cooperative control for the purpose of autonomous driving, which allows the vehicle to travel autonomously without relying on driver operation, by controlling the driving force generating device, steering mechanism, braking device, etc. based on information about the surroundings of the vehicle obtained by the outside vehicle information detection unit 12030 or the inside vehicle information detection unit 12040.

[0365] Furthermore, the microcomputer 12051 can output a control command to the body system control unit 12020 based on the information outside the vehicle acquired by the outside information detection unit 12030. For example, the microcomputer 12051 can control the headlamps according to the position of a preceding vehicle or an oncoming vehicle detected by the outside information detection unit 12030, and perform cooperative control aimed at preventing glare, such as switching from high beams to low beams.

[0366] The audio / video output unit 12052 transmits at least one output signal of audio and / or video to an output device capable of visually or audibly notifying the passengers of the vehicle or the outside of the vehicle of information. In the example of Fig. 60, the output devices are exemplified by an audio speaker 12061, a display unit 12062, and an instrument panel 12063. The display unit 12062 may include, for example, at least one of an on-board display and a head-up display.

[0367] FIG. 61 is a diagram showing an example of the installation position of the imaging unit 12031.

[0368] In FIG. 61, the imaging unit 12031 includes imaging units 12101, 12102, 12103, 12104, and 12105.

[0369] The imaging units 12101, 12102, 12103, 12104, and 12105 are provided, for example, at positions such as the front nose, side mirrors, rear bumper, back door, and the top of the windshield inside the vehicle cabin of the vehicle 12100. The imaging unit 12101 provided on the front nose and the imaging unit 12105 provided on the top of the windshield inside the vehicle cabin mainly acquire images of the front of the vehicle 12100. The imaging units 12102 and 12103 provided on the side mirrors mainly acquire images of the sides of the vehicle 12100. The imaging unit 12104 provided on the rear bumper or back door mainly acquires images of the rear of the vehicle 12100. The imaging unit 12105 provided on the top of the windshield inside the vehicle cabin is mainly used to detect preceding vehicles, pedestrians, obstacles, traffic lights, traffic signs, lanes, etc.

[0370] 61 shows an example of the imaging ranges of the imaging units 12101 to 12104. Imaging range 12111 indicates the imaging range of the imaging unit 12101 provided on the front nose, imaging ranges 12112 and 12113 indicate the imaging ranges of the imaging units 12102 and 12103 provided on the side mirrors, respectively, and imaging range 12114 indicates the imaging range of the imaging unit 12104 provided on the rear bumper or back door. For example, by overlaying the image data captured by the imaging units 12101 to 12104, an overhead image of the vehicle 12100 viewed from above can be obtained.

[0371] At least one of the image capturing units 12101 to 12104 may have a function of acquiring distance information. For example, at least one of the image capturing units 12101 to 12104 may be a stereo camera made up of multiple image capturing elements, or may be an image capturing element having pixels for phase difference detection.

[0372] For example, based on the distance information obtained from the imaging units 12101 to 12104, the microcomputer 12051 can calculate the distance to each three-dimensional object within the imaging ranges 12111 to 12114 and the change in this distance over time (relative speed with respect to the vehicle 12100), thereby extracting as a preceding vehicle, in particular, the three-dimensional object that is the closest three-dimensional object on the path of the vehicle 12100 and traveling in approximately the same direction as the vehicle 12100 at a predetermined speed (e.g., 0 km / h or higher). Furthermore, the microcomputer 12051 can set a vehicle-to-vehicle distance to be maintained in advance in front of the preceding vehicle, and perform automatic braking control (including follow-up stop control), automatic acceleration control (including follow-up start control), etc. In this way, cooperative control can be performed for the purpose of autonomous driving, which allows the vehicle to travel autonomously without relying on driver operation.

[0373] For example, the microcomputer 12051 classifies and extracts three-dimensional object data regarding three-dimensional objects into two-wheeled vehicles, ordinary vehicles, large vehicles, pedestrians, utility poles, and other three-dimensional objects based on distance information obtained from the imaging units 12101 to 12104, and can use the data for automatic obstacle avoidance. For example, the microcomputer 12051 distinguishes obstacles around the vehicle 12100 into obstacles that are visible to the driver of the vehicle 12100 and obstacles that are difficult to see. The microcomputer 12051 then determines a collision risk that indicates the risk of collision with each obstacle, and when the collision risk is equal to or greater than a set value and a collision is possible, the microcomputer 12051 can provide driving assistance for collision avoidance by outputting an alarm to the driver via the audio speaker 12061 or the display unit 12062, or by performing forced deceleration or avoidance steering via the drive system control unit 12010.

[0374] At least one of the image capturing units 12101 to 12104 may be an infrared camera that detects infrared rays. For example, the microcomputer 12051 can recognize a pedestrian by determining whether a pedestrian is present in the images captured by the image capturing units 12101 to 12104. Such pedestrian recognition is performed, for example, by extracting feature points from the images captured by the image capturing units 12101 to 12104 as infrared cameras and performing pattern matching on a series of feature points that indicate the outline of an object to determine whether the object is a pedestrian. When the microcomputer 12051 determines that a pedestrian is present in the images captured by the image capturing units 12101 to 12104 and recognizes the pedestrian, the audio / image output unit 12052 controls the display unit 12062 to superimpose a rectangular outline on the recognized pedestrian for emphasis. The audio / image output unit 12052 may also control the display unit 12062 to display an icon or the like indicating the pedestrian at a desired position.

[0375] In this specification, a system refers to an entire device made up of multiple devices.

[0376] The effects described in this specification are merely examples and are not limiting, and other effects may also be present.

[0377] It should be noted that the embodiments of the present technology are not limited to the above-described embodiments, and various modifications are possible within the scope of the present technology.

[0378] The present technology may also be configured as follows. (1) A photodetector including: a photoelectric conversion unit; a first pixel having a first light collecting unit that collects light on the photoelectric conversion unit; a second pixel having a second light collecting unit having a shape different from that of the first light collecting unit; and a pixel array unit in which the first pixels and the second pixels are arranged in a matrix, wherein the second pixels are randomly arranged in the pixel array unit. (2) The photodetector according to (1), wherein the first light collecting unit and the second light collecting unit are each provided horizontally with respect to a light incident surface and include a light-shielding film provided between pixels, and the light-shielding film included in the second light collecting unit has a different width than the light-shielding film included in the first light collecting unit. (3) The photodetector according to (1) or (2), wherein an opening of the second pixel is a different size from an opening of the first pixel. (4) The photodetector according to any one of (1) to (3), wherein the first light-collecting section and the second light-collecting section each include a color filter, the color filter includes a wall provided perpendicular to a light incident surface, and the wall of the color filter included in the second light-collecting section is made of a different material, has a different height in the vertical direction, a different width in the horizontal direction, or is not formed as compared with the wall of the color filter included in the first light-collecting section. (5) The photodetector according to (4), wherein the wall has a two-layer structure of a waveguide and a light-shielding film, or a single-layer structure of the waveguide. (6) The photodetector according to any one of (1) to (5), wherein the first light-collecting section and the second light-collecting section each include a polarizer, the polarizers having different polarization angles are arranged in the pixel array section based on a predetermined regularity, and the polarizer with the polarization angle not based on the regularity is arranged in the second pixel.(7) The photodetector according to any one of (1) to (6), wherein the first light-collecting unit and the second light-collecting unit each include an on-chip lens, the on-chip lens included in the first light-collecting unit is a first on-chip lens that covers one pixel with one on-chip lens or a second on-chip lens that covers one pixel with multiple on-chip lenses, and the on-chip lens included in the second light-collecting unit is formed in a shape different from the first on-chip lens and the second on-chip lens. (8) The photodetector according to any one of (1) to (6), wherein the first light-collecting unit and the second light-collecting unit each include an on-chip lens, the on-chip lens included in the first light-collecting unit is a first on-chip lens that covers one pixel with multiple elliptical on-chip lenses or a second on-chip lens that covers one pixel with multiple circular on-chip lenses, and the on-chip lens included in the second light-collecting unit is formed in a shape different from the first on-chip lens and the second on-chip lens. (9) A photodetector comprising: a photoelectric conversion unit, a light collecting unit that collects light onto the photoelectric conversion unit, pixels having the light collecting unit, and a pixel array unit in which the pixels are arranged in a matrix, wherein the light collecting unit includes a first member and a second member, and in the pixel array unit, a first period in which the first members are arranged is different from a second period in which the second members are arranged, and the second period is longer than the first period. (10) The photodetector according to (9), wherein the first member is a color filter, the second member is a light-shielding film that is arranged horizontally with respect to a light incident surface and is arranged between pixels, the light-shielding film includes light-shielding films with different widths, and the second period is a period in which the light-shielding films with different widths are included.(11) The photodetector according to (9) or (10), wherein the first member is a color filter, the second member is a wall provided on the color filter in a direction perpendicular to the light incident surface, the wall includes a second wall made of a different material from the first wall, a second wall having a different height in the vertical direction, a second wall having a different width in the horizontal direction, or no second wall, and the second period is a period at which the second walls are arranged. (12) The photodetector according to (11), wherein the wall has a two-layer structure of a waveguide and a light-shielding film, or a single-layer structure of the waveguide. (13) The photodetector according to any of (9) to (12), wherein the first member is a color filter, the second member is a polarizer, the polarizers having different polarization angles are arranged in the pixel array section based on a predetermined regularity, and the second period is a period at which the polarizers having the polarization angles not based on the regularity are arranged. (14) The photodetector according to any one of (9) to (12), wherein the first member is a color filter, the second member is an on-chip lens, the on-chip lenses include a first on-chip lens covering one pixel, a second on-chip lens covering multiple pixels, and a third on-chip lens formed in a shape different from the first on-chip lens and the second on-chip lens, and the second period is a period at which the third on-chip lenses are arranged. (15) The photodetector according to (9), wherein the first member is a color filter, the second member is an on-chip lens, the on-chip lenses include a first on-chip lens that is an elliptical on-chip lens covering a plurality of pixels, a second on-chip lens that is a circular on-chip lens covering one pixel, and a third on-chip lens that is formed in a shape different from the first on-chip lens and the second on-chip lens, and the second period is a period at which the third on-chip lenses are arranged.(16) A photodetector comprising: a photoelectric conversion unit; a light collecting unit that collects light on the photoelectric conversion unit; pixels having the light collecting unit; and a pixel array unit in which the pixels are arranged in a matrix, wherein the light collecting unit includes a filter; N filters with different transmission spectra are arranged in blocks each consisting of a predetermined number of pixels in the pixel array unit, and the arrangement of the N filters differs for each block. (17) The photodetector according to (16), wherein the filter is a plasmon filter or a Fabry-Perot filter. (18) The photodetector according to (16) or (17), wherein N is 7 or greater. (19) A photodetector comprising: a photoelectric conversion unit; a light collecting unit that collects light on the photoelectric conversion unit; pixels having the light collecting unit; and a pixel array unit in which the pixels are arranged in a matrix, wherein the light collecting unit comprises a metasurface element, and at least two or more types of metasurface elements having the same phase difference design for light within the pixel and different shapes between pixels are arranged in the pixel array unit. (20) The photodetector according to (19), wherein the metasurface elements having different shapes are randomly arranged in the pixel array portion.

[0379] REFERENCE SIGNS LIST 1 imaging device, 2 pixel, 3 pixel array section, 4 vertical drive circuit, 5 column signal processing circuit, 6 horizontal drive circuit, 7 output circuit, 8 control circuit, 9 vertical signal line, 10 pixel drive wiring, 11 horizontal signal line, 12 semiconductor substrate, 13 input / output terminal, 41 semiconductor region, 42 N-type semiconductor region, 46 transparent insulating film, 48 recessed region, 49 light-shielding film, 51 color filter, 52 on-chip lens, 54 inter-pixel separation section, 55 insulator, 61 anti-reflection film, 62 hafnium oxide film, 63 aluminum oxide film, 64 silicon oxide film, 81 seal glass, 82 infrared cut filter, 101 block, 111 block, 131 reflective film, 151 trench, 201 CF wall, 203 Waveguide, 231 Polarizer, 301 Narrowband filter layer, 321 Plasmon filter, 331 Conductor thin film, 332 Hole, 351 Fabry-Perot filter, 352, 353 Semi-transparent mirror, 401 Metasurface element, 411 Filler, 413 Pillar, 421 Filler

Claims

1. A photodetector comprising: a photoelectric conversion unit; a first pixel having a first light-collecting unit that collects light onto the photoelectric conversion unit; a second pixel having a second light-collecting unit having a shape different from that of the first light-collecting unit; and a pixel array unit in which the first pixels and the second pixels are arranged in a matrix, wherein the second pixels are randomly arranged in the pixel array unit.

2. The photodetector according to claim 1, wherein the first light-collecting section and the second light-collecting section are each provided horizontally to the light incident surface and include a light-shielding film provided between pixels, and the light-shielding film included in the second light-collecting section has a different width from the light-shielding film included in the first light-collecting section.

3. The photodetector device according to claim 1, wherein the opening of the second pixel is a different size from the opening of the first pixel.

4. The photodetector device of claim 1, wherein the first light-collecting section and the second light-collecting section each include a color filter, the color filter includes a wall arranged perpendicular to the light incident surface, and the wall of the color filter included in the second light-collecting section is made of a different material from the wall of the color filter included in the first light-collecting section, has a different height in the vertical direction, has a different width in the horizontal direction, or is not formed.

5. The photodetector according to claim 4, wherein the wall has a two-layer structure of a waveguide and a light-shielding film, or a single-layer structure of the waveguide.

6. The photodetector according to claim 1, wherein the first light-collecting section and the second light-collecting section each include a polarizer, the polarizers having different polarization angles are arranged in the pixel array section based on a predetermined regularity, and the polarizers having the polarization angles not based on the regularity are arranged in the second pixels.

7. The photodetector according to claim 1, wherein the first light-collecting unit and the second light-collecting unit each include an on-chip lens, the on-chip lens included in the first light-collecting unit is a first on-chip lens that covers one pixel with one on-chip lens, or a second on-chip lens that covers one pixel with multiple on-chip lenses, and the on-chip lens included in the second light-collecting unit is formed in a shape different from that of the first on-chip lens and the second on-chip lens.

8. The photodetector according to claim 1, wherein the first light-collecting unit and the second light-collecting unit each include an on-chip lens, the on-chip lens included in the first light-collecting unit is a first on-chip lens that covers one pixel with a plurality of elliptical on-chip lenses, or a second on-chip lens that covers one pixel with a plurality of circular on-chip lenses, and the on-chip lens included in the second light-collecting unit is formed in a shape different from that of the first on-chip lens and the second on-chip lens.

9. A photodetector comprising: a photoelectric conversion unit; a light-collecting unit that collects light onto the photoelectric conversion unit; pixels having the light-collecting unit; and a pixel array unit in which the pixels are arranged in a matrix, wherein the light-collecting unit includes a first member and a second member, and in the pixel array unit, a first period in which the first members are arranged is different from a second period in which the second members are arranged, and the second period is longer than the first period.

10. The photodetector according to claim 9, wherein the first member is a color filter, the second member is a light-shielding film arranged horizontally to the light incident surface and arranged between pixels, the light-shielding film includes light-shielding films of different widths, and the second period is a period including the light-shielding films of different widths.

11. The photodetector device of claim 9, wherein the first member is a color filter, the second member is a wall provided on the color filter in a direction perpendicular to the light incident surface, the wall is a second wall made of a material different from that of the first wall, a second wall having a different height in the vertical direction, a second wall having a different width in the horizontal direction, or no second wall, and the second period is a period at which the second walls are arranged.

12. The photodetector according to claim 11, wherein the wall has a two-layer structure of a waveguide and a light-shielding film, or a single-layer structure of the waveguide.

13. The photodetector according to claim 9, wherein the first member is a color filter, the second member is a polarizer, the polarizers having different polarization angles are arranged in the pixel array section based on a predetermined regularity, and the second period is a period in which the polarizers having the polarization angles not based on the regularity are arranged.

14. The photodetector device according to claim 9, wherein the first member is a color filter, the second member is an on-chip lens, the on-chip lenses include a first on-chip lens that covers one pixel, a second on-chip lens that covers multiple pixels, and a third on-chip lens that is formed in a shape different from the first on-chip lens and the second on-chip lens, and the second period is a period at which the third on-chip lenses are arranged.

15. The photodetector device according to claim 9, wherein the first member is a color filter, the second member is an on-chip lens, the on-chip lenses include a first on-chip lens that is an elliptical on-chip lens covering a plurality of pixels, a second on-chip lens that is a circular on-chip lens covering one pixel, and a third on-chip lens that is formed in a shape different from the first on-chip lens and the second on-chip lens, and the second period is a period at which the third on-chip lenses are arranged.

16. A photodetector comprising: a photoelectric conversion unit; a light-collecting unit that collects light onto the photoelectric conversion unit; pixels having the light-collecting unit; and a pixel array unit in which the pixels are arranged in a matrix, wherein the light-collecting unit includes a filter; N filters with different transmission spectra are arranged within a block consisting of a predetermined number of pixels of the pixel array unit; and the arrangement of the N filters differs for each block.

17. The optical detection device according to claim 16, wherein the filter is a plasmon filter or a Fabry-Perot filter.

18. The photodetector according to claim 16, wherein N is 7 or more.

19. An optical detection device comprising: a photoelectric conversion unit; a light-collecting unit that collects light onto the photoelectric conversion unit; a pixel having the light-collecting unit; and a pixel array unit in which the pixels are arranged in a matrix, wherein the light-collecting unit comprises a metasurface element, and at least two or more types of metasurface elements having the same phase difference design for light within the pixel and different shapes between pixels are arranged in the pixel array unit.

20. The photodetector device according to claim 19, wherein the metasurface elements having different shapes are randomly arranged in the pixel array section.

Images