Thin film capacitor

Abstract

[Problem] The present invention provides a thin film capacitor which is capable of dividing an input voltage and has a thin overall thickness. [Solution] Provided is a thin film capacitor 100 which comprises: a capacitive electrode E1 that is formed on a surface D1 of a dielectric film D; a capacitive electrode E2 that is formed on a surface D2 of the dielectric film D; protective insulating films R1, R2 that respectively embed the capacitive electrodes E1, E2; and conductor layers L1, L2 that are respectively provided on the protective insulating films R1, R2. The thin film capacitor 100 includes at least capacitors C1, C2. The capacitive electrode E1 included in the capacitor C1 is connected to a terminal electrode P1 that is located in the conductor layer L1. The capacitive electrode E2 included in the capacitor C1 is connected to the capacitive electrode E1 included in the capacitor C2. The capacitive electrode E2 included in the capacitor C2 is connected to a terminal electrode P0 that is located in the conductor layer L2.

Description

thin film capacitor

[0001] The present disclosure relates to a thin film capacitor capable of dividing an input voltage.

[0002] Japanese Patent Application Laid-Open No. 2003-144222 discloses a voltage dividing capacitor that can divide an input voltage by stacking a plurality of thin film capacitors.

[0003] International Publication No. WO2024 / 177052

[0004] The voltage dividing capacitor disclosed in Patent Document 1 is formed by stacking a plurality of thin film capacitors, and therefore the greater the number of layers, the thicker the overall thickness becomes.

[0005] In this disclosure, a thin film capacitor is described that is capable of dividing an input voltage and has a small overall thickness.

[0006] A thin film capacitor according to one aspect of the present disclosure includes a dielectric film having first and second surfaces located opposite to each other, a first capacitance electrode formed on the first surface of the dielectric film, a second capacitance electrode formed on the second surface of the dielectric film, a first protective insulating film covering the first surface of the dielectric film so as to bury the first capacitance electrode, a second protective insulating film covering the second surface of the dielectric film so as to bury the second capacitance electrode, a first conductor layer provided on the first protective insulating film, and a second conductor layer provided on the second protective insulating film, and the first capacitance electrode, the second capacitance electrode, and the first and second capacitance electrodes are electrically connected to each other. The dielectric film located between the capacitance electrodes constitutes a plurality of capacitors, and the plurality of capacitors include at least first and second capacitors, where a first capacitance electrode included in the first capacitor is connected to a first terminal electrode located on the first conductor layer through a via conductor provided to penetrate the first protective insulating film, a second capacitance electrode included in the first capacitor is connected to a first capacitance electrode included in the second capacitor, and a second capacitance electrode included in the second capacitor is connected to a second terminal electrode located on the second conductor layer through a via conductor provided to penetrate the second protective insulating film.

[0007] According to the present disclosure, a thin film capacitor capable of dividing an input voltage and having a small overall thickness is provided.

[0008] FIG. 1 is an equivalent circuit diagram of a thin film capacitor 100 according to a first embodiment of the technology disclosed herein. FIG. 2 is a schematic cross-sectional view of the thin film capacitor 100 according to the first embodiment. FIG. 3 is an equivalent circuit diagram of a thin film capacitor 200 according to a second embodiment of the technology disclosed herein. FIG. 4 is a schematic cross-sectional view of the thin film capacitor 200 according to the second embodiment. FIG. 5 is a schematic cross-sectional view of a thin film capacitor 200A according to a modification of the second embodiment. FIG. 6 is an equivalent circuit diagram of a thin film capacitor 300 according to a third embodiment of the technology disclosed herein. FIG. 7 is a schematic cross-sectional view of the thin film capacitor 300 according to the third embodiment. FIGS. 8A to 8G are process diagrams for explaining a manufacturing method of the thin film capacitor 300 according to the third embodiment. FIG. 9 is a schematic cross-sectional view of the thin film capacitor 300A according to a modification of the third embodiment. FIG. 10A is a schematic cross-sectional view of a thin film capacitor 400 according to a fourth embodiment of the technology disclosed herein. FIG. 10B is a schematic plan view of the thin film capacitor 400 according to the fourth embodiment. Fig. 10C is a schematic cross-sectional view of a thin film capacitor 400A according to a modification of the fourth embodiment. Fig. 11A is a schematic cross-sectional view of a thin film capacitor 500 according to a fifth embodiment of the technology disclosed herein. Fig. 11B is a schematic plan view of the thin film capacitor 500 according to the fifth embodiment. Fig. 11C is a schematic cross-sectional view of a thin film capacitor 500A according to a modification of the fifth embodiment. Fig. 12A is a schematic cross-sectional view of a thin film capacitor 600 according to a sixth embodiment of the technology disclosed herein. Fig. 12B is a schematic plan view of the thin film capacitor 600 according to the sixth embodiment. Fig. 12C is a schematic cross-sectional view of a thin film capacitor 600A according to a modification of the sixth embodiment.

[0009] Hereinafter, embodiments of the technology according to the present disclosure will be described in detail with reference to the accompanying drawings.

[0010] FIG. 1 is an equivalent circuit diagram of a thin film capacitor 100 according to a first embodiment of the technique of the present disclosure.

[0011] As shown in Figure 1, the thin film capacitor 100 according to the first embodiment has a circuit configuration in which capacitors C1 and C2 are connected in series between terminal electrodes P1 and P0. The connection point between capacitors C1 and C2 is connected to terminal electrode P2. Terminal electrode P1 is an input terminal (IN), and terminal electrode P0 is a ground terminal (GND). A power supply IC 11 is connected between terminal electrodes P1 and P0. An input capacitor 12 may be connected between terminal electrodes P1 and P0.

[0012] When the input voltage supplied from the power supply IC 11 is Vin, the output voltage V that appears at the terminal electrode P2, which is the output terminal (OUT), is ＤＩＶ is the level of the input voltage Vin divided by the capacitors C1 and C2. Therefore, if the capacitance is designed to be C1<C2, Vin / 2>V ＤＩＶ and the output voltage V ＤＩＶ It is possible to further reduce

[0013] FIG. 2 is a schematic cross-sectional view of the thin film capacitor 100 according to the first embodiment.

[0014] 2, the thin film capacitor 100 according to the first embodiment includes a dielectric film D having surfaces D1 and D2 located opposite to each other, a capacitive electrode E1 made of copper or the like formed on the surface D1 of the dielectric film D, a capacitive electrode E2 made of nickel or the like formed on the surface D2 of the dielectric film D, a protective insulating film R1 made of resin or the like covering the surface D1 of the dielectric film D so as to embed the capacitive electrode E1, a protective insulating film R2 made of resin or the like covering the surface D2 of the dielectric film D so as to embed the capacitive electrode E2, a conductor layer L1 made of copper or the like provided on the protective insulating film R1, and a conductor layer L2 made of copper or the like provided on the protective insulating film R2. The dielectric film D may be made of a perovskite-based dielectric material such as barium titanate.

[0015] The capacitance electrodes E1 and E2 and the dielectric film D located between the capacitance electrodes E1 and E2 constitute two capacitors C1 and C2. The capacitor C1 is composed of an electrode pattern E11 belonging to the capacitance electrode E1, an electrode pattern E21 belonging to the capacitance electrode E2, and the dielectric film D located between the electrode patterns E11 and E21. The capacitor C2 is composed of an electrode pattern E12 belonging to the capacitance electrode E1, an electrode pattern E22 belonging to the capacitance electrode E2, and the dielectric film D located between the electrode patterns E12 and E22. The electrode patterns E11 and E12 are separated from each other on the surface D1 of the dielectric film D. The electrode patterns E21 and E22 are separated from each other on the surface D2 of the dielectric film D.

[0016] 2, the entire electrode pattern E11 overlaps with the electrode pattern E21, and the entire electrode pattern E12 overlaps with the electrode pattern E22. This allows the capacitance of capacitor C1 to be adjusted by the area of ​​electrode pattern E11, and the capacitance of capacitor C2 to be adjusted by the area of ​​electrode pattern E12. In the example shown in FIG. 2, the area of ​​electrode pattern E12 is larger than the area of ​​electrode pattern E11, and therefore the capacitance of capacitor C2 is larger than the capacitance of capacitor C1.

[0017] The conductor layer L1 includes terminal electrodes P1 and P2. The conductor layer L2 includes a terminal electrode P0. The terminal electrode P1 is connected to an electrode pattern E11 included in the capacitor C1 through a via conductor VE11 provided to penetrate the protective insulating film R1. The terminal electrode P2 is connected to an electrode pattern E21 included in the capacitor C1 through a via conductor VE12 provided to penetrate the protective insulating film R1 and the dielectric film D, and is connected to an electrode pattern E12 included in the capacitor C2 through a via conductor VE13 provided to penetrate the protective insulating film R1. The terminal electrode P0 is connected to an electrode pattern E22 included in the capacitor C2 through a via conductor VE21 provided to penetrate the protective insulating film R2. The terminal electrode P0 may cover the entire surface of the protective insulating film R2.

[0018] As described above, the terminal electrodes P1 and P2 located on the conductor layer L1 function as an input terminal (IN) and an output terminal (OUT), respectively. The terminal electrode P0 located on the conductor layer L2 functions as a ground terminal (GND). If the terminal electrode P0 is grounded and an input voltage Vin is supplied to the terminal electrode P1, an output voltage V obtained by dividing the input voltage Vin is output to the terminal electrode P2. ＤＩＶ appears.

[0019] As described above, the thin film capacitor 100 according to this embodiment has two series-connected capacitors C1 and C2 arranged horizontally, resulting in an overall thickness that is the same as that of a single capacitor. Furthermore, the terminal electrode P1 functioning as the input terminal (IN) and the terminal electrode P2 functioning as the output terminal (OUT) are arranged on the same surface, facilitating connection within the circuit board, for example, when embedded in a circuit board. Furthermore, increasing the area of ​​the terminal electrode P0 functioning as the ground terminal (GND) can also improve the heat dissipation characteristics from the terminal electrode P0.

[0020] FIG. 3 is an equivalent circuit diagram of a thin film capacitor 200 according to the second embodiment of the technique of the present disclosure.

[0021] 3, the thin film capacitor 200 according to the second embodiment differs from the thin film capacitor 100 according to the first embodiment in that capacitors C3 and C4 connected in series between the terminal electrode P2 and the terminal electrode P0 are added. The other circuit configurations are the same as those of the thin film capacitor 100 according to the first embodiment.

[0022] In this embodiment, the voltage V1 appearing at the terminal electrode P2 is at a level obtained by dividing the input voltage Vin by the capacitors C1 and C2, and the output voltage V ＤＩＶ is the level of the voltage V1 further divided by the capacitors C3 and C4. Therefore, if the capacitance is designed so that C3<C4, then V1 / 2>V ＤＩＶ and the output voltage V ＤＩＶ It is possible to further reduce

[0023] FIG. 4 is a schematic cross-sectional view of a thin film capacitor 200 according to the second embodiment.

[0024] 4, in the thin film capacitor 200 according to the second embodiment, the capacitance electrode E1 further includes electrode patterns E13 and E14, and the capacitance electrode E2 further includes electrode patterns E23 and E24. The electrode patterns E13 and E23 and the dielectric film D located between the electrode patterns E13 and E23 form a capacitor C3. The electrode patterns E14 and E24 and the dielectric film D located between the electrode patterns E14 and E24 form a capacitor C4. The electrode patterns E11 to E14 are separated from one another on the surface D1 of the dielectric film D. The electrode patterns E21 to E24 are separated from one another on the surface D2 of the dielectric film D.

[0025] 4, the entire electrode pattern E13 overlaps with the electrode pattern E23, and the entire electrode pattern E14 overlaps with the electrode pattern E24. This allows the capacitance of capacitor C3 to be adjusted by the area of ​​electrode pattern E13, and the capacitance of capacitor C4 to be adjusted by the area of ​​electrode pattern E14. In the example shown in FIG. 4, the area of ​​electrode pattern E14 is larger than the area of ​​electrode pattern E13, and therefore the capacitance of capacitor C4 is larger than the capacitance of capacitor C3.

[0026] The conductor layer L1 further includes a terminal electrode P3. The terminal electrode P2 is further connected to an electrode pattern E13 included in the capacitor C3 through a via conductor VE14 provided to penetrate the protective insulating film R1. The terminal electrode P3 is connected to an electrode pattern E23 included in the capacitor C3 through a via conductor VE15 provided to penetrate the protective insulating film R1 and the dielectric film D, and is also connected to an electrode pattern E14 included in the capacitor C4 through a via conductor VE16 provided to penetrate the protective insulating film R1. The terminal electrode P0 is further connected to an electrode pattern E24 included in the capacitor C4 through a via conductor VE22 provided to penetrate the protective insulating film R2. The terminal electrode P0 may cover the entire surface of the protective insulating film R2.

[0027] Other basic configurations are the same as those of the thin film capacitor 100 shown in FIG. 2, so the same elements are given the same reference numerals and redundant explanations will be omitted.

[0028] As described above, the terminal electrodes P1 and P3 located on the conductor layer L1 function as an input terminal (IN) and an output terminal (OUT), respectively. The terminal electrode P0 located on the conductor layer L2 functions as a ground terminal (GND). If the terminal electrode P0 is grounded and an input voltage Vin is supplied to the terminal electrode P1, a voltage V1 obtained by dividing the input voltage Vin appears at the terminal electrode P2, and an output voltage V1 obtained by dividing the voltage V1 appears at the terminal electrode P3. ＤＩＶ appears.

[0029] In this way, the thin film capacitor 200 according to the present embodiment divides the input voltage Vin using two capacitors C1 and C2, and further divides the voltage V1 using another two capacitors C3 and C4. Therefore, even if the input voltage Vin is higher, a low output voltage V ＤＩＶ It is possible to obtain a total thickness of 1000 Ω. Moreover, because the four capacitors C1 to C4 are arranged horizontally, the overall thickness is the same as that of a single capacitor. Furthermore, because the terminal electrode P1, which functions as the input terminal (IN), and the terminal electrode P3, which functions as the output terminal (OUT), are arranged on the same surface, connection within the circuit board is easy, for example, when the capacitor is embedded in a circuit board. Furthermore, by increasing the area of ​​the terminal electrode P0, which functions as the ground terminal (GND), it is possible to improve the heat dissipation characteristics from the terminal electrode P0. It is also possible to use the voltage V1 appearing at the terminal electrode P2 as a separate output voltage.

[0030] FIG. 5 is a schematic cross-sectional view of a thin film capacitor 200A according to a modification of the second embodiment.

[0031] In the thin-film capacitor 200A according to the modified example shown in FIG. 5, the capacitance electrodes E1 of capacitors C2 and C3 are integrated to form an electrode pattern E123, and the capacitance electrodes E2 of capacitors C3 and C4 are integrated to form an electrode pattern E234. The electrode pattern E123 is connected to the terminal electrode P2 located on the conductor layer L1 through a via conductor VE13 provided through the protective insulating film R1. The electrode pattern E14 is connected to the terminal electrode P0a located on the conductor layer L1 through a via conductor VE10 provided through the protective insulating film R1. The electrode pattern E234 is connected to the terminal electrode P3a located on the conductor layer L2 through a via conductor VE20 provided through the protective insulating film R2. The other basic configuration is the same as that of the thin-film capacitor 200 shown in FIG. 4, so the same elements are designated by the same reference numerals and redundant description will be omitted.

[0032] In the thin film capacitor 200A according to the modified example, the terminal electrode P1 located on the conductor layer L1 functions as an input terminal (IN), and the terminal electrode P3a located on the conductor layer L2 functions as an output terminal (OUT). The terminal electrode P0a located on the conductor layer L1 functions as another ground terminal (GND). When the terminal electrodes P0 and P0a are grounded and an input voltage Vin is supplied to the terminal electrode P1, an output voltage V1 obtained by dividing the input voltage Vin appears at the terminal electrode P2, and an output voltage V2 obtained by dividing the voltage V1 appears at the terminal electrode P3a. ＤＩＶ appears.

[0033] As shown in the modified thin film capacitor 200A, the capacitance electrodes constituting multiple capacitors may be integrated. This reduces the number of divisions of the capacitance electrode, thereby enabling the effective area of ​​the capacitance electrode to be increased. Furthermore, as shown in the modified thin film capacitor 200A, the terminal electrode functioning as the ground terminal (GND) may be divided into multiple parts.

[0034] FIG. 6 is an equivalent circuit diagram of a thin film capacitor 300 according to the third embodiment of the technique of the present disclosure.

[0035] 6, the thin film capacitor 300 according to the third embodiment differs from the thin film capacitor 200 according to the second embodiment in that capacitors C5 and C6 connected in series between the terminal electrode P3 and the terminal electrode P0 are further added. The other circuit configurations are the same as those of the thin film capacitor 200 according to the second embodiment.

[0036] Capacitors C1 and C2 are connected in series between terminal electrode P1, which is the input terminal (IN), and terminal electrode P0, which is the ground terminal (GND). As a result, the voltage V1 appearing at terminal electrode P2, which is the connection point between capacitors C1 and C2, is at a level obtained by dividing the input voltage Vin by capacitors C1 and C2. Capacitors C3 and C4 are connected in series between terminal electrode P2 and terminal electrode P0, which is the ground terminal (GND). As a result, the voltage V2 appearing at terminal electrode P3, which is the connection point between capacitors C3 and C4, is at a level obtained by further dividing voltage V1 by capacitors C3 and C4. Capacitors C5 and C6 are connected in series between terminal electrode P3 and terminal electrode P0, which is the ground terminal (GND). As a result, the output voltage V ＤＩＶ is at a level obtained by further dividing the voltage V2 by the capacitors C5 and C6.

[0037] When the voltage division ratio between capacitors C1 and C2, the voltage division ratio between capacitors C3 and C4, and the voltage division ratio between capacitors C5 and C6 are all N, the total voltage division ratio is N ３ Therefore, the output voltage V ＤＩＶ is Vin / N ３ That is, voltage V1=Vin / N, voltage V2=V1 / N, output voltage V ＤＩＶ = V2 / N.

[0038] Here, if the voltage division ratio between the capacitors C1 and C2 is N1, the voltage division ratio between the capacitors C3 and C4 is N2, and the voltage division ratio between the capacitors C5 and C6 is N3, some or all of the voltage division ratios N1, N2, and N3 may be different.ＤＩＶ is Vin / (N1·N2·N3). That is, voltage V1=Vin / N1, voltage V2=V1 / N2, and output voltage V ＤＩＶ = V2 / N3.

[0039] Therefore, if the capacitance is designed so that C1<C2, the capacitance is designed so that C3<C3, and the capacitance is designed so that C5<C6, then the output voltage V ＤＩＶ It is possible to further reduce the

[0040] FIG. 7 is a schematic cross-sectional view of a thin film capacitor 300 according to the third embodiment.

[0041] 7, in the thin film capacitor 300 according to the third embodiment, the capacitance electrode E1 further includes electrode patterns E15 and E16, and the capacitance electrode E2 further includes electrode patterns E25 and E26. The electrode patterns E15 and E25 and the dielectric film D located between the electrode patterns E15 and E25 form a capacitor C5. The electrode patterns E16 and E26 and the dielectric film D located between the electrode patterns E16 and E26 form a capacitor C6. The electrode patterns E11 to E16 are separated from one another on the surface D1 of the dielectric film D. The electrode patterns E21 to E26 are separated from one another on the surface D2 of the dielectric film D.

[0042] 7, the entire electrode pattern E15 overlaps with the electrode pattern E25, and the entire electrode pattern E16 overlaps with the electrode pattern E26. This allows the capacitance of capacitor C5 to be adjusted by the area of ​​electrode pattern E15, and the capacitance of capacitor C6 to be adjusted by the area of ​​electrode pattern E16. In the example shown in FIG. 7, the area of ​​electrode pattern E16 is larger than the area of ​​electrode pattern E15, and therefore the capacitance of capacitor C6 is larger than the capacitance of capacitor C5.

[0043] The conductor layer L1 further includes a terminal electrode P4. The terminal electrode P3 is further connected to an electrode pattern E15 included in the capacitor C5 through a via conductor VE17 provided to penetrate the protective insulating film R1. The terminal electrode P4 is connected to an electrode pattern E25 included in the capacitor C5 through a via conductor VE18 provided to penetrate the protective insulating film R1 and the dielectric film D, and is also connected to an electrode pattern E16 included in the capacitor C6 through a via conductor VE19 provided to penetrate the protective insulating film R1. The terminal electrode P0 is further connected to an electrode pattern E26 included in the capacitor C6 through a via conductor VE23 provided to penetrate the protective insulating film R2. The terminal electrode P0 may cover the entire surface of the protective insulating film R2.

[0044] Other basic configurations are the same as those of the thin film capacitor 200 shown in FIG. 4, so the same elements are given the same reference numerals and redundant explanations will be omitted.

[0045] As described above, the terminal electrodes P1 and P4 located on the conductor layer L1 function as an input terminal (IN) and an output terminal (OUT), respectively. The terminal electrode P0 located on the conductor layer L2 functions as a ground terminal (GND). If the terminal electrode P0 is connected to the ground and an input voltage Vin is supplied to the terminal electrode P1, an output voltage V1 obtained by dividing the input voltage Vin appears at the terminal electrode P2, a voltage V2 obtained by dividing the voltage V1 appears at the terminal electrode P3, and an output voltage V3 obtained by dividing the voltage V2 appears at the terminal electrode P4. ＤＩＶ appears.

[0046] In this way, the thin film capacitor 300 according to this embodiment divides the input voltage Vin using two capacitors C1 and C2, further divides the voltage V1 using two other capacitors C3 and C4, and further divides the voltage V2 using two other capacitors C5 and C6. Therefore, even if the input voltage Vin is higher, a lower output voltage V ＤＩＶIt is possible to obtain a total thickness of six capacitors C1 to C6. Moreover, since the six capacitors C1 to C6 are arranged horizontally, the overall thickness is the same as that of a single capacitor. Furthermore, since the terminal electrode P1 functioning as the input terminal (IN) and the terminal electrode P4 functioning as the output terminal (OUT) are arranged on the same surface, connection within the circuit board is easy, for example, when the capacitor is embedded in a circuit board. Furthermore, by increasing the area of ​​the terminal electrode P0 functioning as the ground terminal (GND), it is possible to improve the heat dissipation characteristics from the terminal electrode P0. It is also possible to use the voltage V1 appearing at the terminal electrode P2 as a separate output voltage, and the voltage V2 appearing at the terminal electrode P3 as yet another output voltage.

[0047] 8A to 8G are process diagrams illustrating a method for manufacturing the thin film capacitor 300 according to the third embodiment.

[0048] First, as shown in FIG. 8A, a dielectric film D is formed on the surface of a capacitance electrode E2 made of nickel or the like, and then a capacitance electrode E1 made of copper or the like is formed on the surface D1 of the dielectric film D. Next, the capacitance electrode E1 is divided into electrode patterns E11 to E16 by patterning. Next, as shown in FIG. 8B, openings OP1 to OP3 are formed in the dielectric film D by patterning. Next, as shown in FIG. 8C, the capacitance electrode E2 is temporarily fixed to a substrate 302 using an adhesive 301.

[0049] 8D , a protective insulating film R1 is formed to cover the surface D1 of the dielectric film D so as to bury the capacitive electrode E1, and then the protective insulating film R1 is patterned to form a plurality of vias in the protective insulating film R1 that expose the electrode patterns E11 to E16 and the openings OP1 to OP3. In this state, a conductor layer L1 is formed on the surface of the protective insulating film R1, and via conductors VE11 to VE19 are formed inside the plurality of vias. The conductor layer L1 is then patterned to divide the conductor layer L1 into terminal electrodes P1 to P4.

[0050] Next, as shown in FIG. 8E , the entire structure is turned upside down, and the conductor layer L1 is temporarily fixed to the substrate 304 using an adhesive 303. The adhesive 301 and substrate 302 are then peeled off to expose the capacitive electrode E2. Next, as shown in FIG. 8F , the capacitive electrode E2 is patterned to divide it into electrode patterns E21 to E26. Next, as shown in FIG. 8G , a protective insulating film R2 is formed to cover the surface D2 of the dielectric film D so as to embed the capacitive electrode E2. The protective insulating film R2 is then patterned to form multiple vias in the protective insulating film R2 that expose the electrode patterns E22, E24, and E26. In this state, the conductor layer L2 is formed on the surface of the protective insulating film R2, and via conductors VE21 to VE23 are formed inside the multiple vias.

[0051] Then, the adhesive 303 and the substrate 304 are peeled off to expose the conductor layer L1, and the resulting product is then cut into pieces of a predetermined size, completing the thin film capacitor 300 shown in FIG.

[0052] FIG. 9 is a schematic cross-sectional view of a thin film capacitor 300A according to a modification of the third embodiment.

[0053] In the thin-film capacitor 300A according to the modified example shown in FIG. 9, the capacitance electrodes E1 of capacitors C2 and C3 are integrated to form an electrode pattern E123, and the capacitance electrodes E1 of capacitors C4 and C5 are integrated to form an electrode pattern E145. The electrode pattern E123 is connected to a terminal electrode P2 located on the conductor layer L1 through a via conductor VE13 provided to penetrate the protective insulating film R1. The electrode pattern E145 is connected to a terminal electrode P3 located on the conductor layer L1 through a via conductor VE16 provided to penetrate the protective insulating film R1. The via conductors VE14 and VE17 shown in FIG. 8 are omitted. The rest of the basic configuration is the same as that of the thin-film capacitor 300 shown in FIG. 7, so the same elements are designated by the same reference numerals and redundant description will be omitted.

[0054] As shown in the modified thin film capacitor 300A, the capacitance electrodes of a plurality of capacitors may be integrated, which reduces the number of divisions of the capacitance electrode and allows the effective area of ​​the capacitance electrode to be increased.

[0055] 10A and 10B are a schematic cross-sectional view and a schematic plan view, respectively, of a thin-film capacitor 400 according to a fourth embodiment of the technique disclosed herein.

[0056] 10A and 10B is the same as the circuit configuration of the thin film capacitor 400 according to the third embodiment. Therefore, the same elements as those in the thin film capacitor 300 according to the third embodiment are denoted by the same reference numerals, and redundant explanations will be omitted.

[0057] In the thin-film capacitor 400 according to the fourth embodiment, the electrode patterns E21 to E26 constituting the capacitance electrode E2 are separated from one another. Also, in the example shown in Figures 10A and 10B, the entire electrode pattern E11 overlaps with the electrode pattern E21, the entire electrode pattern E12 overlaps with the electrode pattern E22, the entire electrode pattern E13 overlaps with the electrode pattern E23, the entire electrode pattern E14 overlaps with the electrode pattern E24, the entire electrode pattern E15 overlaps with the electrode pattern E25, and the entire electrode pattern E16 overlaps with the electrode pattern E26. The areas of the electrode patterns E12, E14, and E16 are larger than those of the electrode patterns E11, E13, and E15, and as a result, the capacitances of the capacitors C2, C4, and C6 are larger than those of the capacitors C1, C3, and C5.

[0058] In the thin-film capacitor 400 according to the fourth embodiment, the dielectric film D is separated for each of the capacitors C1 to C6. Furthermore, in the thin-film capacitor 400 according to the fourth embodiment, the capacitors C1 to C6 are arranged in one direction. The planar sizes of the electrode patterns E21 to E26 included in the capacitors C1 to C6 may be the same. Furthermore, in the thin-film capacitor 400 according to the fourth embodiment, the capacitors C1 to C6 are embedded in a protective insulating film R0, and terminal electrodes IN, OUT, and GND are provided on one surface of the protective insulating film R0. The terminal electrode IN is connected to the terminal electrode P1 through a via conductor VE31. The terminal electrode OUT is connected to the terminal electrode P4 through a via conductor VE33. The terminal electrode P4 is connected to the electrode pattern E16 through a via conductor VE32. The terminal electrode GND is connected to the terminal electrode P0 through a via conductor VE30.

[0059] As exemplified by the thin film capacitor 400 according to the fourth embodiment, the elements constituting the capacitors C1 to C6 may be separated from one another. Also, the terminal electrodes IN, OUT, and GND may all be provided on one surface of the protective insulating film R0.

[0060] FIG. 10C is a schematic cross-sectional view of a thin film capacitor 400A according to a modification of the fourth embodiment.

[0061] 10C differs from the thin film capacitor 400 according to the fourth embodiment in that another terminal electrode GND is provided on the other surface of the protective insulating film R0. Since the other basic configuration is the same as that of the thin film capacitor 400 according to the fourth embodiment, the same elements are given the same reference numerals and redundant explanations will be omitted.

[0062] The terminal electrode GND provided on the other surface of the protective insulating film R0 may cover the entire other surface of the protective insulating film R0. By adding such a terminal electrode GND, the ground potential can be supplied from the other surface side of the protective insulating film R0 as well as the heat dissipation characteristics can be further improved.

[0063] 11A and 11B are a schematic cross-sectional view and a schematic plan view, respectively, of a thin-film capacitor 500 according to a fifth embodiment of the technology disclosed herein.

[0064] 11A and 11B is the same as the circuit configuration of the thin film capacitor 500 according to the third embodiment. Therefore, the same elements as those in the thin film capacitor 300 according to the third embodiment are denoted by the same reference numerals, and redundant explanations will be omitted.

[0065] In the thin film capacitor 500 according to the fifth embodiment, the capacitance electrodes E2 of capacitors C2, C4, and C6 are integrated to form an electrode pattern E2246. Furthermore, the electrode pattern E21 of capacitor C1 is arranged within a first opening provided in the electrode pattern E2246 so as to be surrounded by the electrode pattern E2246. The electrode pattern E11 of capacitor C1 is arranged within a first opening provided in the electrode pattern E2246 so as to be surrounded by a ring-shaped electrode pattern E12 that fits along the first opening. This surrounds capacitor C1 and capacitor C2. Similarly, the electrode pattern E23 of capacitor C3 is arranged within a second opening provided in the electrode pattern E2246 so as to be surrounded by the electrode pattern E2246. The electrode pattern E13 of capacitor C3 is arranged within a second opening provided in the electrode pattern E2246 so as to be surrounded by a ring-shaped electrode pattern E14 that fits along the second opening. This surrounds capacitor C3 and capacitor C4. Furthermore, the electrode pattern E25 constituting the capacitor C5 is arranged so as to be surrounded by the electrode pattern E2246 within the third opening provided in the electrode pattern E2246, and the electrode pattern E15 constituting the capacitor C5 is arranged so as to be surrounded by the ring-shaped electrode pattern E16 that fits along the third opening, thereby surrounding the capacitor C5 with the capacitor C6.

[0066] In this embodiment as well, the entire electrode pattern E11 overlaps with the electrode pattern E21, the entire electrode pattern E12 overlaps with the electrode pattern E2246, the entire electrode pattern E13 overlaps with the electrode pattern E23, the entire electrode pattern E14 overlaps with the electrode pattern E2246, the entire electrode pattern E15 overlaps with the electrode pattern E25, and the entire electrode pattern E16 overlaps with the electrode pattern E2246. Furthermore, the areas of the electrode patterns E12, E14, and E16 are larger than the areas of the electrode patterns E11, E13, and E15, and as a result, the capacitances of the capacitors C2, C4, and C6 are larger than the capacitances of the capacitors C1, C3, and C5.

[0067] In the thin-film capacitor 500 according to the fifth embodiment, the dielectric film D is also separated for each of the capacitors C1 to C6. Furthermore, in the thin-film capacitor 500 according to the fifth embodiment, the capacitors C1 to C6 are embedded in a protective insulating film R0, and terminal electrodes IN, OUT, and GND are provided on one surface of the protective insulating film R0. The terminal electrode IN is connected to the electrode pattern E11 through a via conductor VE11. The terminal electrode OUT is connected to the terminal electrode P4 through a via conductor VE19. The terminal electrode P4 is connected to the electrode pattern E16 through a via conductor VE18. The terminal electrode GND is connected to the electrode pattern E2246 through a via conductor VE30.

[0068] As exemplified by the thin film capacitor 500 according to the fifth embodiment, the capacitors C1, C3, and C5 may be arranged so as to be surrounded by the capacitors C2, C4, and C6, respectively. This increases the degree of freedom in connection between the capacitors C1 to C6 while ensuring sufficient capacitance of the capacitors C2, C4, and C6. Furthermore, because the capacitance electrodes E2 of the capacitors C2, C4, and C6 are formed by the integrated electrode pattern E2246, a wiring pattern for interconnecting the capacitance electrodes E2 of the capacitors C2, C4, and C6 is not required, thereby reducing parasitic inductance.

[0069] FIG. 11C is a schematic cross-sectional view of a thin film capacitor 500A according to a modification of the fifth embodiment.

[0070] 11C differs from the thin film capacitor 500 according to the fifth embodiment in that a separate terminal electrode GND is provided on the other surface of the protective insulating film R0. Since the other basic configuration is the same as that of the thin film capacitor 500 according to the fifth embodiment, the same elements are denoted by the same reference numerals and redundant explanations will be omitted.

[0071] The terminal electrode GND provided on the other surface of the protective insulating film R0 may cover the entire other surface of the protective insulating film R0. By adding such a terminal electrode GND, the ground potential can be supplied from the other surface side of the protective insulating film R0 as well as the heat dissipation characteristics can be further improved.

[0072] 12A and 12B are a schematic cross-sectional view and a schematic plan view, respectively, of a thin film capacitor 600 according to a sixth embodiment of the technique disclosed herein.

[0073] 12A and 12B is the same as the circuit configuration of the thin film capacitor 600 according to the third embodiment. Therefore, the same elements as those in the thin film capacitor 300 according to the third embodiment are denoted by the same reference numerals, and redundant explanations will be omitted.

[0074] In the thin film capacitor 600 according to the sixth embodiment, similar to the thin film capacitor 500 according to the fifth embodiment, the capacitance electrodes E2 of the capacitors C2, C4, and C6 are integrated to form an electrode pattern E2246. In this embodiment, no openings are provided in the electrode pattern E2246, and the electrode pattern E2246 is a solid pattern. In the thin film capacitor 600 according to the fifth embodiment, unlike the thin film capacitor 500 according to the fifth embodiment, the capacitors C1, C3, and C5 are not surrounded by the capacitors C2, C4, and C6, but are arranged outside the capacitors C2, C4, and C6.

[0075] In the thin film capacitor 600 according to the sixth embodiment, the dielectric films D constituting capacitors C2, C4, and C6 are also integrated and not separated. The dielectric films D constituting capacitors C1, C3, and C5 are separated from one another. In the thin film capacitor 600 according to the sixth embodiment, the capacitors C1 to C6 are also embedded in a protective insulating film R0, and terminal electrodes IN, OUT, and GND are provided on one surface of the protective insulating film R0. The terminal electrode IN is connected to the electrode pattern E11 through a via conductor VE11. The terminal electrode OUT is connected to the electrode pattern E16 through via conductors VE33 and VE32. The terminal electrode GND is connected to the terminal electrode P0 through a via conductor VE34. The rest of the basic configuration is the same as that of the thin film capacitor 500 according to the fifth embodiment.

[0076] As exemplified by the thin film capacitor 600 according to the sixth embodiment, the electrode pattern E2246 and the dielectric film D constituting the capacitors C2, C4, and C6 may be integrated, and the capacitors C1, C3, and C5 may be disposed outside the capacitors C2, C4, and C6. This increases the degree of freedom in the layout of the capacitors C1, C3, and C5, as well as the degree of freedom in the layout of the electrode patterns E12, E14, and E16. Furthermore, because the capacitance electrodes E2 of the capacitors C2, C4, and C6 are formed by the integrated electrode pattern E2246, a wiring pattern for connecting the capacitance electrodes E2 of the capacitors C2, C4, and C6 to each other is not required, thereby reducing parasitic inductance.

[0077] FIG. 12C is a schematic cross-sectional view of a thin film capacitor 600A according to a modification of the sixth embodiment.

[0078] 12C differs from the thin film capacitor 600 according to the sixth embodiment in that another terminal electrode GND is provided on the other surface of the protective insulating film R0. Since the other basic configuration is the same as that of the thin film capacitor 600 according to the sixth embodiment, the same elements are denoted by the same reference numerals and redundant explanations will be omitted.

[0079] The terminal electrode GND provided on the other surface of the protective insulating film R0 may cover the entire other surface of the protective insulating film R0. By adding such a terminal electrode GND, the ground potential can be supplied from the other surface side of the protective insulating film R0 as well as the heat dissipation characteristics can be further improved.

[0080] The above describes embodiments of the technology according to the present disclosure, but the technology according to the present disclosure is not limited to the above embodiments, and various modifications are possible within the scope of the gist of the technology, and it goes without saying that these modifications are also included within the scope of the technology according to the present disclosure.

[0081] The technology according to the present disclosure includes, but is not limited to, the following configuration examples.

[0082] A thin film capacitor according to one aspect of the present disclosure includes a dielectric film having first and second surfaces located opposite to each other, a first capacitance electrode formed on the first surface of the dielectric film, a second capacitance electrode formed on the second surface of the dielectric film, a first protective insulating film covering the first surface of the dielectric film so as to bury the first capacitance electrode, a second protective insulating film covering the second surface of the dielectric film so as to bury the second capacitance electrode, a first conductor layer provided on the first protective insulating film, and a second conductor layer provided on the second protective insulating film, and the first capacitance electrode, the second capacitance electrode, and the first and second capacitance electrodes are electrically connected to each other. The dielectric film located between the capacitance electrodes constitutes a plurality of capacitors, the plurality of capacitors including at least first and second capacitors, a first capacitance electrode included in the first capacitor being connected to a first terminal electrode located on the first conductor layer through a via conductor provided to penetrate the first protective insulating film, a second capacitance electrode included in the first capacitor being connected to a first capacitance electrode included in the second capacitor, and a second capacitance electrode included in the second capacitor being connected to a second terminal electrode located on the second conductor layer through a via conductor provided to penetrate the second protective insulating film. This provides a thin film capacitor that is capable of dividing an input voltage and has a small overall thickness.

[0083] The thin film capacitor may further include a third terminal electrode located on the first conductor layer, the third terminal electrode being connected to the second capacitance electrode included in the first capacitor through a via conductor provided through the first protective insulating film and the dielectric film, and connected to the first capacitance electrode included in the second capacitor through a via conductor provided through the first protective insulating film. In this manner, when an input voltage is applied between the first terminal electrode and the second terminal electrode, a level obtained by dividing the input voltage by the first and second capacitors appears at the third terminal electrode. In this case, the second capacitor may have a larger capacitance than the first capacitor. This makes it possible to further reduce the output voltage appearing at the third terminal electrode. Furthermore, the second terminal electrode may cover the entire surface of the second protective insulating film. This improves heat dissipation characteristics via the second terminal electrode.

[0084] In the above-described thin film capacitor, the plurality of capacitors may further include third and fourth capacitors, wherein the first capacitance electrode of the second capacitor is connected to one of the first and second capacitance electrodes of the third capacitor, the other of the first and second capacitance electrodes of the third capacitor is connected to one of the first and second capacitance electrodes of the fourth capacitor, and the other of the first and second capacitance electrodes of the fourth capacitor is connected to the second terminal electrode through a via conductor provided through the second protective insulating film. This allows the input voltage divided by the first and second capacitors to be further divided by the third and fourth capacitors. In this case, the fourth capacitor may have a capacitance greater than that of the third capacitor. This allows the voltage division ratio of the third and fourth capacitors to be further increased.

[0085] The thin film capacitor may further include a fourth terminal electrode located on the first conductor layer, the fourth terminal electrode being connected to the second capacitance electrode included in the third capacitor through a via conductor provided to penetrate the first protective insulating film and the dielectric film, and being connected to the first capacitance electrode included in the fourth capacitor through a via conductor provided to penetrate the first protective insulating film. In this way, when an input voltage is applied between the first terminal electrode and the second terminal electrode, a level obtained by dividing the input voltage by the first and second capacitors appears at the third terminal electrode, and a level obtained by further dividing the voltage appearing at the third terminal electrode appears at the fourth terminal electrode.

[0086] In the above-described thin film capacitor, the plurality of capacitors may further include fifth and sixth capacitors, wherein one of the first and second capacitance electrodes of the fourth capacitor is connected to one of the first and second capacitance electrodes of the fifth capacitor, the other of the first and second capacitance electrodes of the fifth capacitor is connected to one of the first and second capacitance electrodes of the sixth capacitor, and the other of the first and second capacitance electrodes of the sixth capacitor is connected to the second terminal electrode. This allows the input voltage divided by the first and second capacitors to be further divided by the third and fourth capacitors, and the voltage divided by the third and fourth capacitors to be further divided by the fifth and sixth capacitors. In this case, the sixth capacitor may have a larger capacitance than the fifth capacitor. This allows the voltage division ratio of the fifth and sixth capacitors to be further increased.

[0087] The thin film capacitor may further include a fifth terminal electrode located on the first conductor layer, the fifth terminal electrode being connected to the second capacitance electrode included in the fifth capacitor through a via conductor provided to penetrate the first protective insulating film and the dielectric film, and being connected to the first capacitance electrode included in the sixth capacitor through a via conductor provided to penetrate the first protective insulating film. In this way, when an input voltage is applied between the first terminal electrode and the second terminal electrode, a level obtained by dividing the input voltage by the first and second capacitors appears at the third terminal electrode, a level obtained by further dividing the voltage appearing at the third terminal electrode appears at the fourth terminal electrode, and a level obtained by further dividing the voltage appearing at the fourth terminal electrode appears at the fifth terminal electrode.

[0088] In the above-described thin film capacitor, the second capacitance electrodes included in the first to sixth capacitors may be separated from one another on the second surface of the dielectric film. This increases the degree of freedom in designing the second capacitance electrodes. Alternatively, the second capacitance electrodes included in the second, fourth, and sixth capacitors may be integrally formed on the second surface of the dielectric film. This eliminates the need for a wiring pattern to mutually connect the second capacitance electrodes included in the second, fourth, and sixth capacitors, thereby reducing parasitic inductance.

[0089] In the above-described thin film capacitor, the first capacitor may be surrounded by the second capacitor. This facilitates connection between the first capacitor and the second capacitor. The third capacitor may be surrounded by the fourth capacitor. This facilitates connection between the third capacitor and the fourth capacitor. Furthermore, the fifth capacitor may be surrounded by the sixth capacitor. This facilitates connection between the fifth capacitor and the sixth capacitor.

[0090] This application claims the benefit of U.S. Provisional Application No. 63 / 555,812, filed February 20, 2024, the entire disclosure of which is incorporated herein by reference.

[0091] 11 Power supply IC 12 Input capacitor 100, 200, 200A, 300, 300A, 400, 400A, 500, 500A, 600, 600A Thin film capacitor 301, 303 Adhesive 302, 304 Base material C1 to C6 Capacitor D Dielectric film D1, D2 Surface E1, E2 Capacitance electrode E11 to E16, E21 to E26 Electrode pattern L1, L2 Conductor layer OP1 to OP3 Opening P0, P0a, P1 to P4, P3a Terminal electrode R0 to R2 Protective insulating film VE10 to VE23, VE30 to VE34 Via conductor

Claims

1. A semiconductor device comprising: a dielectric film having first and second surfaces located opposite to each other; a first capacitance electrode formed on the first surface of the dielectric film; a second capacitance electrode formed on the second surface of the dielectric film; a first protective insulating film covering the first surface of the dielectric film so as to embed the first capacitance electrode; a second protective insulating film covering the second surface of the dielectric film so as to embed the second capacitance electrode; a first conductor layer provided on the first protective insulating film; and a second conductor layer provided on the second protective insulating film; wherein the first capacitance electrode, the second capacitance electrode, and the dielectric film located between the first and second capacitance electrodes constitute a plurality of capacitors, the plurality of capacitors including at least first and second capacitors; and the first capacitance electrode included in the first capacitor is connected to a first terminal electrode located on the first conductor layer through a via conductor provided to penetrate the first protective insulating film. a thin-film capacitor, wherein the second capacitance electrode included in the first capacitor is connected to the first capacitance electrode included in the second capacitor, and the second capacitance electrode included in the second capacitor is connected to a second terminal electrode located on the second conductor layer through a via conductor provided to penetrate the second protective insulating film.

2. The thin film capacitor according to claim 1, further comprising a third terminal electrode located on the first conductor layer, the third terminal electrode being connected to the second capacitance electrode included in the first capacitor through a via conductor provided to penetrate the first protective insulating film and the dielectric film, and being connected to the first capacitance electrode included in the second capacitor through a via conductor provided to penetrate the first protective insulating film.

3. The thin film capacitor according to claim 1, wherein the second capacitor has a larger capacitance than the first capacitor.

4. The thin film capacitor according to claim 1, wherein the second terminal electrode covers the entire surface of the second protective insulating film.

5. The thin film capacitor according to any one of claims 1 to 4, wherein the plurality of capacitors further include third and fourth capacitors, the first capacitance electrode included in the second capacitor is connected to one of the first and second capacitance electrodes included in the third capacitor, the other of the first and second capacitance electrodes included in the third capacitor is connected to one of the first and second capacitance electrodes included in the fourth capacitor, and the other of the first and second capacitance electrodes included in the fourth capacitor is connected to the second terminal electrode through a via conductor provided to penetrate the second protective insulating film.

6. The thin film capacitor according to claim 5, wherein the fourth capacitor has a capacitance greater than that of the third capacitor.

7. The thin film capacitor according to claim 5, further comprising a fourth terminal electrode located on the first conductor layer, the fourth terminal electrode being connected to the second capacitance electrode included in the third capacitor through a via conductor provided to penetrate the first protective insulating film and the dielectric film, and being connected to the first capacitance electrode included in the fourth capacitor through a via conductor provided to penetrate the first protective insulating film.

8. The thin film capacitor according to claim 5, wherein the plurality of capacitors further include fifth and sixth capacitors, wherein one of the first and second capacitance electrodes included in the fourth capacitor is connected to one of the first and second capacitance electrodes included in the fifth capacitor, the other of the first and second capacitance electrodes included in the fifth capacitor is connected to one of the first and second capacitance electrodes included in the sixth capacitor, and the other of the first and second capacitance electrodes included in the sixth capacitor is connected to the second terminal electrode.

9. The thin film capacitor according to claim 8, wherein the sixth capacitor has a capacitance greater than that of the fifth capacitor.

10. The thin film capacitor according to claim 8, further comprising a fifth terminal electrode located on the first conductor layer, the fifth terminal electrode being connected to the second capacitance electrode included in the fifth capacitor through a via conductor provided to penetrate the first protective insulating film and the dielectric film, and being connected to the first capacitance electrode included in the sixth capacitor through a via conductor provided to penetrate the first protective insulating film.

11. The thin film capacitor according to claim 8, wherein the second capacitance electrodes included in the first to sixth capacitors are separated from each other on the second surface of the dielectric film.

12. The thin film capacitor according to claim 8, wherein the second capacitance electrodes included in the second, fourth, and sixth capacitors are integrally formed on the second surface of the dielectric film.

13. The thin film capacitor of claim 8, wherein the first capacitor is surrounded by the second capacitor.

14. The thin film capacitor according to claim 13, wherein the third capacitor is surrounded by the fourth capacitor.

15. The thin film capacitor according to claim 14, wherein the fifth capacitor is surrounded by the sixth capacitor.

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