Light-emitting diode and display device including same
The display device improves luminous efficiency by employing a light-emitting element with a specific electrode configuration and reflective layer, resulting in enhanced current distribution and display quality.
Patent Information
- Application Number
- PCT/KR2024/019709
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2024-02-22
- Filing Date
- 2024-12-04
- Publication Date
- 2025-08-28
AI Technical Summary
Existing display devices face challenges in improving the luminous efficiency of their pixels.
The display device incorporates a light-emitting element with a unique electrode configuration, including protruding bonding electrodes and a reflective layer to enhance current distribution uniformity, thereby improving light-emitting efficiency.
The solution results in more uniform current distribution within the light-emitting device, enhancing its luminous efficiency and overall display quality.
Smart Images

Figure KR2024019709_28082025_PF_FP_ABST
Abstract
Description
Light-emitting element and display device including the same
[0001] The present disclosure relates to a light-emitting element and a display device including the same.
[0002] A display device includes a plurality of pixels, each of which can emit light. The display device can display an image by combining the light emitted from the pixels.
[0003] Much research is being conducted to improve the luminous efficiency of each pixel included in a display device.
[0004] An object of the present disclosure is to provide a display device including pixels with improved luminous efficiency.
[0005] A light-emitting device according to embodiments of the present disclosure includes a light-emitting stack including a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer, a first bonding electrode electrically connected to a lower surface of the first semiconductor layer and including a first protrusion protruding in at least one direction among a first direction and a direction opposite to the first direction so as not to overlap with the light-emitting stack in a plane, a 2-1 bonding electrode electrically connected to the second semiconductor layer, and a 2-2 bonding electrode electrically connected to the second semiconductor layer and spaced apart from the 2-1 bonding electrode in a second direction intersecting the first direction, wherein the first bonding electrode can be disposed between the 2-1 bonding electrode and the 2-2 bonding electrode.
[0006] In one embodiment, first and second exposed surfaces are defined on the opposite surface of the second semiconductor layer facing the outer surface of the active layer, which do not overlap in a plane with the first semiconductor layer and the active layer, and the 2-1 bonding electrode can be electrically connected to the first exposed surface, and the 2-2 bonding electrode can be electrically connected to the second exposed surface.
[0007] In one embodiment, the first exposed surface may be adjacent to one side of the second semiconductor layer, and the second exposed surface may be adjacent to the other side of the second semiconductor layer opposite to the one side in the second direction.
[0008] In one embodiment, the second-1 bonding electrode may include a second-1 protrusion that protrudes in a direction opposite to the second direction so as not to overlap with the light-emitting laminate on a plane.
[0009] In one embodiment, the second-second bonding electrode may include a second-second protrusion that protrudes in the second direction so as not to overlap with the light-emitting laminate on a plane.
[0010] In one embodiment, the light emitting element may further include a reflective layer surrounding at least a portion of a side surface of the light emitting layer.
[0011] In one embodiment, the reflective layer can be in contact with each of the second-1 bonding electrode and the second-2 bonding electrode.
[0012] In one embodiment, the reflective layer may include a conductive material.
[0013] In one embodiment, the reflective layer and the first bonding electrode may be spaced apart from each other.
[0014] In one embodiment, the light emitting element may further include an insulating film surrounding at least a portion of the outer peripheral surface of the light emitting layer.
[0015] In one embodiment, the insulating film may be disposed between the 2-1 bonding electrode and the first semiconductor layer, between the 2-1 bonding electrode and the active layer, between the 2-2 bonding electrode and the first semiconductor layer, and between the 2-2 bonding electrode and the active layer.
[0016] In one embodiment, the first bonding electrode may include a first-first bonding electrode, and a first-second bonding electrode spaced apart from the first-first bonding electrode in the second direction.
[0017] A light-emitting device according to embodiments of the present disclosure includes a light-emitting stack including a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer, a first-first bonding electrode electrically connected to a lower surface of the first semiconductor layer, a first-second bonding electrode electrically connected to a lower surface of the first semiconductor layer and spaced apart from the first-first bonding electrode in a first direction, and a second bonding electrode electrically connected to the second semiconductor layer and including a protrusion that protrudes in at least one direction among a second direction intersecting the first direction and a direction opposite to the second direction so as not to overlap with the light-emitting stack in a plane, wherein the second bonding electrode may be disposed between the first-first bonding electrode and the first-second bonding electrode.
[0018] In one embodiment, the first-first bonding electrode may be adjacent to one side of the first semiconductor layer, and the first-second bonding electrode may be adjacent to the other side opposite to the one side of the first semiconductor layer in the first direction.
[0019] In one embodiment, the first-first bonding electrode may include a first-first protrusion that protrudes in a direction opposite to the first direction so as not to overlap with the light-emitting laminate on a plane.
[0020] In one embodiment, the first-second bonding electrode may include a first-second protrusion that protrudes in the first direction so as not to overlap with the light-emitting laminate on a plane.
[0021] In one embodiment, the second bonding electrode may include a 2-1 bonding electrode and a 2-2 bonding electrode spaced apart from the 2-1 bonding electrode in the first direction.
[0022] In one embodiment, first and second exposed surfaces are defined on the opposite surface of the second semiconductor layer facing the outer surface of the active layer, which do not overlap in a plane with the first semiconductor layer and the active layer, and the 2-1 bonding electrode can be electrically connected to the first exposed surface, and the 2-2 bonding electrode can be electrically connected to the second exposed surface.
[0023] In one embodiment, the light emitting element may further include a reflective layer surrounding at least a portion of a side surface of the light emitting layer.
[0024] In one embodiment, the light emitting element may further include an insulating film surrounding at least a portion of the outer peripheral surface of the light emitting layer.
[0025] A display device according to embodiments of the present disclosure may include an electrode layer including an anode electrode including a first contact portion, and a cathode electrode including a second-first contact portion and a second-second contact portion, a pixel circuit layer disposed under the electrode layer and including a sub-pixel circuit electrically connected to the anode electrode, and a light-emitting element disposed on the electrode layer. The light-emitting element comprises a light-emitting stack including a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer, a first bonding electrode electrically connected to a lower surface of the first semiconductor layer and disposed on the first contact portion, the first bonding electrode including a first protrusion protruding in at least one direction among a first direction and a direction opposite to the first direction so as not to overlap with the light-emitting stack in a plane, a 2-1 bonding electrode electrically connected to the second semiconductor layer and disposed on the 2-1 contact portion, and a 2-2 bonding electrode electrically connected to the second semiconductor layer and spaced apart from the 2-1 bonding electrode in a second direction intersecting the first direction and disposed on the 2-2 contact portion, wherein the first bonding electrode can be disposed between the 2-1 bonding electrode and the 2-2 bonding electrode.
[0026] In one embodiment, the first bonding electrode may be electrically connected to the first contact portion via a first bridge electrode that is electrically connected to each of the first protrusion and the first contact portion.
[0027] In one embodiment, the 2-1 bonding electrode includes a 2-1 protrusion that protrudes in a direction opposite to the second direction so as not to overlap with the light-emitting laminate on a plane, and the 2-1 bonding electrode can be electrically connected to the 2-1 contact portion via a 2-1 bridge electrode that is electrically connected to each of the 2-1 protrusion and the 2-1 contact portion.
[0028] In one embodiment, the 2-2 bonding electrode includes a 2-2 protrusion that protrudes in the second direction so as not to overlap with the light-emitting laminate on a plane, and the 2-2 bonding electrode can be electrically connected to the 2-2 contact portion through a 2-2 bridge electrode that is electrically connected to each of the 2-2 protrusion and the 2-2 contact portion.
[0029] In one embodiment, the first bonding electrode may overlap a portion of the first contact portion in a plane, the second-1 bonding electrode may overlap a portion of the second-1 contact portion in a plane, and the second-2 bonding electrode may overlap a portion of the second-2 contact portion in a plane.
[0030] The light-emitting device according to embodiments of the present disclosure may have a relatively small distance between bonding electrodes electrically connected to different semiconductor layers. Accordingly, the current distribution within the light-emitting device may become more uniform, thereby improving the light-emitting efficiency of the light-emitting device.
[0031] A display device according to embodiments of the present disclosure may include the light-emitting element. Accordingly, the display quality of the display device may be improved.
[0032] FIG. 1 is a schematic block diagram illustrating a display device according to embodiments of the present disclosure.
[0033] FIG. 2 is a schematic block diagram for explaining one of the sub-pixels included in the display device of FIG. 1.
[0034] FIG. 3 is a plan view for explaining a display panel constituting the display device of FIG. 1.
[0035] FIG. 4 is a schematic cross-sectional view illustrating one embodiment of the display panel of FIG. 3.
[0036] FIG. 5 is a schematic cross-sectional view illustrating one embodiment of the display panel of FIG. 3.
[0037] FIGS. 6 to 8 are schematic drawings for explaining a light-emitting element according to the first embodiment of the present disclosure.
[0038] FIGS. 9 to 11 are schematic drawings for explaining a sub-pixel including a light-emitting element according to the first embodiment of the present disclosure.
[0039] FIGS. 12 to 14 are schematic drawings for explaining a light-emitting element according to a second embodiment of the present disclosure.
[0040] FIGS. 15 to 17 are schematic drawings for explaining a sub-pixel including a light-emitting element according to a second embodiment of the present disclosure.
[0041] FIGS. 18 to 20 are schematic drawings for explaining a light-emitting element according to a third embodiment of the present disclosure.
[0042] FIGS. 21 to 23 are schematic drawings for explaining a sub-pixel including a light-emitting element according to a third embodiment of the present disclosure.
[0043] FIGS. 24 to 26 are schematic drawings for explaining a light-emitting element according to the fourth embodiment of the present disclosure.
[0044] FIGS. 27 to 29 are schematic drawings for explaining a sub-pixel including a light-emitting element according to a fourth embodiment of the present disclosure.
[0045] FIGS. 30 to 33 are schematic drawings for explaining a light-emitting element according to the fifth embodiment of the present disclosure.
[0046] FIGS. 34 to 37 are schematic drawings for explaining a sub-pixel including a light-emitting element according to the fifth embodiment of the present disclosure.
[0047] Figure 38 is a schematic block diagram illustrating a display system according to one embodiment.
[0048] Figures 39 to 42 are perspective views illustrating application examples of the display system of Figure 38.
[0049] In the following description, for purposes of explanation, various specific details are set forth to provide a thorough understanding of various embodiments or implementations of the present disclosure. As used herein, the terms "embodiment" and "implementation" are non-limiting examples of the devices or methods disclosed herein and are interchangeable. However, it will be apparent that various embodiments may be implemented other than these specific details, or in one or more equivalent arrangements. The various embodiments herein are not necessarily exclusive, nor are they intended to limit the present disclosure. For example, specific shapes, configurations, and characteristics of an embodiment may be used or implemented in other embodiments.
[0050] Unless otherwise stated, the described embodiments should be understood to provide the features of the present disclosure. Accordingly, unless otherwise stated, features, components, modules, layers, films, panels, regions, and / or aspects of the various embodiments (hereinafter, individually or collectively referred to as “elements”) may be combined, separated, interchanged, and / or rearranged in other ways without departing from the inventive concept.
[0051] In the accompanying drawings, the use of cross-hatching and / or shading is generally intended to clarify boundaries between adjacent elements. Therefore, the presence or absence of cross-hatching or shading does not imply a preference or requirement for particular materials, material properties, dimensions, proportions, commonalities between the depicted elements, and / or characteristics, attributes, etc. of the elements. Furthermore, the sizes and relative sizes of elements in the accompanying drawings may be exaggerated for clarity and / or illustrative purposes. In cases where the embodiments are implemented differently, the order of certain processes may be performed differently from the order described. For example, two processes described in succession may be performed substantially simultaneously or in the reverse order of the described order. In addition, like reference numbers and / or reference letters indicate like elements.
[0052] When an element, such as a layer, is referred to as being "on," "connected to," or "coupled to" another element or layer, it can be directly on, connected to, or coupled to the other element or layer, or there may be intervening elements or layers present. However, when an element or layer is referred to as being "directly on," "directly connected to," or "directly coupled to" another element or layer, there may be no intervening elements or layers present. For this purpose, the term "connected" may refer to a physical, electrical, and / or fluid connection, with or without intervening elements. Furthermore, the X-axis, Y-axis, and Z-axis are not limited to the three axes of a rectangular coordinate system, such as the x-axis, y-axis, and z-axis, and may be interpreted in a broader sense. For example, the X-axis, Y-axis, and Z-axis may be perpendicular to one another, or may be in other directions that are not perpendicular to one another.
[0053] For the purposes of this disclosure, “at least one of A and B” can be interpreted as A alone, B alone, or any combination of A and B. Additionally, “at least one of X, Y, and Z” and “at least one selected from the group consisting of X, Y, and Z” can be interpreted as X alone, Y alone, Z alone, or any combination of two or more of X, Y, and Z. The term “and / or” as used herein includes any and all combinations of one or more of the associated listed items.
[0054] Terms such as "first," "second," etc. may be used to describe various types of elements, but these elements are not limited by these terms. These terms are used to distinguish one element from another. Accordingly, without departing from the scope of this disclosure, a first element discussed below may also be referred to as a second element.
[0055] Spatially relative terms such as "beneath" (below, under, lower), "upper" (over), "higher" (higher), and "side" (e.g., sidewall) may be used herein for descriptive purposes to describe one element in relation to another as depicted in the drawings. The spatially relative terms are intended to encompass various orientations of the device during use, operation, and / or manufacture in addition to the orientation depicted in the drawings. For example, if the device in the drawings were turned over, an element described as being "below" another element or feature could be described as being "above" the other element or feature. Thus, the term "below" can encompass both the above and below orientations. Moreover, the device may be oriented in other orientations (e.g., rotated 90 degrees or otherwise), and the spatially relative terms used herein may be interpreted accordingly.
[0056] The terminology used herein is for the purpose of describing particular embodiments and is not intended to be limiting. As used herein, the singular forms "a," "an," and "the" are intended to include the plural as well, unless the context clearly dictates otherwise. Also, as used herein, the terms "comprises," "comprising," "includes," and / or "including" specify the presence of stated features, integers, steps, operations, elements, components, and / or groups thereof, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof. Also, as used herein, the terms "substantially," "about," and other similar terms are used as terms of approximation and thus are used to account for inherent variations in measurements, calculations, and / or provided values that would be recognizable to those skilled in the art.
[0057] Various embodiments are described herein with reference to cross-sectional and / or exploded drawings, which are schematic illustrations of embodiments and / or intermediate structures. Therefore, variations in the shapes of the drawings may be expected, for example, as a result of manufacturing techniques and / or tolerances. Therefore, the embodiments disclosed herein should not be construed as necessarily limited to the specific shapes depicted, and variations in shape that occur during manufacturing, for example, should be taken into account. In this way, the areas depicted in the drawings may be schematic in nature, and such shapes may not reflect the actual shape of the device and are therefore not necessarily intended to be limiting.
[0058] Conventionally, some embodiments are described and illustrated in the accompanying drawings in terms of functional blocks, components, and / or modules. Those skilled in the art will appreciate that such blocks, components, and / or modules may be physically implemented by electronic (or optical) circuits, such as logic circuits, discrete components, microprocessors, hard-wired circuits, memory elements, wiring connections, and the like, which may be formed using semiconductor-based manufacturing techniques or other manufacturing techniques. When the blocks, components, and / or modules are implemented by microprocessors or other similar hardware, they may be programmed and controlled using software (e.g., microcode) to perform the various functions discussed herein, and optionally may be driven by firmware and / or software. Furthermore, each block, component, and / or module may be implemented by dedicated hardware, or a combination of dedicated hardware that performs some functions and processors (e.g., one or more programmed microprocessors and associated circuitry) that perform other functions. Additionally, each block, portion, and / or module of some embodiments may be physically separated into two or more interacting and individual blocks, portions, and / or modules without departing from the scope of the inventive concept. Furthermore, the blocks, portions, and / or modules of some embodiments may be physically combined into more complex blocks, portions, and / or modules without departing from the scope of the inventive concept.
[0059] Unless otherwise defined or implied herein, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by a person skilled in the art to which the disclosure pertains. Terms defined in commonly used dictionaries, for example, should be interpreted as having a meaning consistent with the relevant technology and context of the disclosure, and should not be interpreted in an idealized or overly formal sense unless explicitly defined herein.
[0060] FIG. 1 is a schematic block diagram illustrating a display device according to embodiments of the present disclosure.
[0061] Referring to FIG. 1, the display device (DD) may include a display panel (DP), a gate driver (120), a data driver (130), a voltage generator (140), and a controller (150).
[0062] The display panel (DP) includes sub-pixels (SP). The sub-pixels (SP) can be electrically connected to a gate driver (120) via first to m-th gate lines (GL1 to GLm). The sub-pixels (SP) can be electrically connected to a data driver (130) via first to n-th data lines (DL1 to DLn).
[0063] Sub-pixels (SP) can generate light of two or more colors. For example, each sub-pixel (SP) can generate light of red, green, blue, cyan, magenta, yellow, etc.
[0064] Two or more sub-pixels among the sub-pixels (SP) can constitute one pixel (PXL). For example, the pixel (PXL) can include three sub-pixels as illustrated in FIG. 1. The pixel (PXL) can emit light of various colors and various luminances depending on the combination of light emitted from the sub-pixels included in the pixel (PXL).
[0065] The gate driver (120) may be connected to the sub-pixels (SP) arranged in the row direction through the first to m-th gate lines (GL1 to GLm). The gate driver (120) may output gate signals to the first to m-th gate lines (GL1 to GLm) in response to a gate control signal (GCS). In embodiments, the gate control signal (GSC) may include a start signal indicating the start of each frame, a horizontal synchronization signal, and the like.
[0066] The gate driver (120) may be arranged on one side of the display panel (DP). However, embodiments are not limited thereto. For example, the gate driver (120) may be divided into two or more drivers that are physically and / or logically separated, and these drivers may be arranged on one side of the display panel (DP) and the other side opposite to the one side. In this way, the gate driver (120) may be arranged around the display panel (DP) in various forms according to embodiments.
[0067] The data driver (130) can be connected to the sub-pixels (SP) arranged in the column direction through the first to nth data lines (DL1 to DLn). The data driver (130) receives image data (DATA) and a data control signal (DCS) from the controller (150). The data driver (130) can operate in response to the data control signal (DCS). In embodiments, the data control signal (DCS) can include a source start signal, a source shift clock, a source output enable signal, etc.
[0068] The data driver (130) can receive voltages from the voltage generator (140). The data driver (130) can apply data signals having grayscale voltages corresponding to image data (DATA) to the first to n-th data lines (DL1 to DLn) using the received voltages. When a gate signal is applied to each of the first to m-th gate lines (GL1 to GLm), data signals corresponding to the image data (DATA) can be applied to the data lines (DL1 to DLn). Accordingly, the sub-pixels (SP) can generate light corresponding to the data signals, and the display panel (DP) can display an image.
[0069] In embodiments, the gate driver (120) and the data driver (130) may include complementary metal-oxide semiconductor (CMOS) circuit elements.
[0070] The voltage generator (140) can operate in response to a voltage control signal (VCS) from the controller (150). The voltage generator (140) can be configured to generate a plurality of voltages and provide the generated voltages to components of the display device (DD), such as the gate driver (120), the data driver (130), and the controller (150). The voltage generator (140) can generate voltages by receiving an input voltage from outside the display device (DD) and regulating the received voltage.
[0071] A voltage generator (140) can generate a first power voltage and a second power voltage. The generated first and second power voltages can be provided to the sub-pixels (SP) through power lines (PL). In one embodiment, at least one of the first and second power voltages can be provided from outside the display device (DD).
[0072] The voltage generator (140) can provide various voltages and / or signals. For example, the voltage generator (140) can provide at least one initialization voltage to be applied to the sub-pixels (SP). For example, during a sensing operation for sensing electrical characteristics of transistors and / or light-emitting elements of the sub-pixels (SP), a reference voltage can be applied to the first to n-th data lines (DL1 to DLn), and the voltage generator (140) can generate the reference voltage and transmit it to the data driver (130). For example, during a display operation for displaying an image on the display panel (DP), common pixel control signals can be applied to the sub-pixels (SP), and the voltage generator (140) can generate the pixel control signals. In embodiments, the voltage generator (140) can provide pixel control signals to the sub-pixels (SP) through the pixel control lines (PXCL). In FIG. 1, the pixel control lines (PXCL) are illustrated as being electrically connected between the voltage generator (140) and the display panel (DP), but embodiments are not limited thereto. For example, the pixel control lines (PXCL) may be electrically connected between the gate driver (120) and the display panel (DP). Pixel control signals may be transmitted from the voltage generator (140) to the pixel control lines (PXCL) through the gate driver (120).
[0073] The controller (150) controls all operations of the display device (DD). The controller (150) receives input image data (IMG) and a corresponding control signal (CTRL) from the outside. In response to the control signal (CTRL), the controller (150) can provide a gate control signal (GCS), a data control signal (DCS), and a voltage control signal (VCS).
[0074] The controller (150) can convert input image data (IMG) to be suitable for a display device (DD) or a display panel (DP) and output image data (DATA). In embodiments, the controller (150) can output image data (DATA) by arranging the input image data (IMG) to be suitable for sub-pixels (SP) in a row unit.
[0075] Two or more of the data driver (130), the voltage generator (140), and the controller (150) may be mounted on an integrated circuit. As illustrated in FIG. 1, the data driver (130), the voltage generator (140), and the controller (150) may be included in a driver integrated circuit (DIC). The data driver (130), the voltage generator (140), and the controller (150) may be functionally separate components within the driver integrated circuit (DIC). In other embodiments, at least one of the data driver (130), the voltage generator (140), and the controller (150) may be provided as a separate component from the driver integrated circuit (DIC).
[0076] FIG. 2 is a schematic block diagram for explaining one of the sub-pixels included in the display device of FIG. 1. In FIG. 2, a sub-pixel (SPij) arranged in an ith row (i may be an integer greater than or equal to 1 and less than or equal to m) and a jth column (j may be an integer greater than or equal to 1 and less than or equal to n) among the sub-pixels (SP) of FIG. 1 is illustrated as an example.
[0077] Referring to FIG. 2, a sub-pixel (SPij) may include a sub-pixel circuit (SPC) and a light-emitting element (LD).
[0078] The light emitting element (LD) can be electrically connected between a first power supply voltage node (VDDN) and a second power supply voltage node (VSSN). The first power supply voltage node (VDDN) can be electrically connected to one of the power supply lines (PL) of FIG. 1 and can receive the first power supply voltage. The second power supply voltage node (VSSN) can be electrically connected to another of the power supply lines (PL) of FIG. 1 and can receive the second power supply voltage. The first power supply voltage can have a higher voltage level than the second power supply voltage.
[0079] A light emitting element (LD) may be electrically connected between an anode electrode (AE) and a cathode electrode (CE). The anode electrode (AE) may be electrically connected to a first power voltage node (VDDN) through a sub-pixel circuit (SPC). For example, the anode electrode (AE) may be electrically connected to the first power voltage node (VDDN) through at least one transistor included in the sub-pixel circuit (SPC). The cathode electrode (CE) may be electrically connected to a second power voltage node (VSSN). The light emitting element (LD) may be configured to emit light according to a current flowing from the anode electrode (AE) to the cathode electrode (CE).
[0080] The sub-pixel circuit (SPC) may be electrically connected to an i-th gate line (GLi) among the first to m-th gate lines (GL1 to GLm) of FIG. 1 and a j-th data line (DLj) among the first to n-th data lines (DL1 to DLn) of FIG. 1. In response to a gate signal received through the i-th gate line (GLi), the sub-pixel circuit (SPC) may control the light-emitting element (LD) to emit light according to a data signal received through the j-th data line (DLj). In embodiments, the sub-pixel circuit (SPC) may be further electrically connected to the pixel control lines (PXCL) of FIG. 1. The sub-pixel circuit (SPC) may further control the light-emitting element (LD) in response to pixel control signals received through the pixel control lines (PXCL).
[0081] For these operations, the sub-pixel circuit (SPC) may include circuit elements, such as transistors and at least one capacitor.
[0082] The transistors of the sub-pixel circuit (SPC) may include P-type transistors and / or N-type transistors. In embodiments, the transistors of the sub-pixel circuit (SPC) may include MOSFETs (Metal Oxide Semiconductor Field Effect Transistors). In embodiments, the transistors of the sub-pixel circuit (SPC) may include an amorphous silicon semiconductor, a monocrystalline silicon semiconductor, a polycrystalline silicon semiconductor, an oxide semiconductor, or the like.
[0083] FIG. 3 is a plan view for explaining a display panel constituting the display device of FIG. 1.
[0084] Referring to FIG. 3, a display panel (DP) may include a display area (DA) and a non-display area (NDA). The display panel (DP) displays an image through the display area (DA). The non-display area (NDA) may be positioned around the display area (DA).
[0085] A display panel (DP) includes sub-pixels (SP) arranged in a display area (DA). The sub-pixels (SP) may be arranged along a first direction (DR1) and a second direction (DR2) intersecting the first direction (DR1). For example, the sub-pixels (SP) may be arranged in a matrix form along the first direction (DR1) and the second direction (DR2). For example, the sub-pixels (SP) may be arranged in a zigzag form along the first direction (DR1) and the second direction (DR2). The arrangement of the sub-pixels (SP) may vary depending on embodiments. The first direction (DR1) may be a row direction, and the second direction (DR2) may be a column direction.
[0086] Two or more sub-pixels among the sub-pixels (SP) can constitute one pixel (PXL). In FIG. 3, the pixel (PXL) is illustrated as including three sub-pixels (SP1, SP2, SP3), but the embodiments are not limited thereto. For example, the pixel (PXL) may also include two sub-pixels. Hereinafter, for convenience of explanation, it may be assumed that the pixel (PXL) includes first to third sub-pixels (SP1, SP2, SP3).
[0087] Each of the first to third sub-pixels (SP1, SP2, SP3) can generate light of one of various colors such as red, green, blue, cyan, magenta, yellow, etc. In the following, for clarity and concise explanation, it can be assumed that the first sub-pixel (SP1) can be configured to generate red color light, the second sub-pixel (SP2) can be configured to generate green color light, and the third sub-pixel (SP3) can be configured to generate blue color light.
[0088] Each of the first to third sub-pixels (SP1, SP2, SP3) may include at least one light-emitting element configured to generate light. In embodiments, the light-emitting elements of the first to third sub-pixels (SP1, SP2, SP3) may generate light of the same color. For example, the light-emitting elements of the first to third sub-pixels (SP1, SP2, SP3) may generate blue light. In other embodiments, the light-emitting elements of the first to third sub-pixels (SP1, SP2, SP3) may generate light of different colors. For example, the light-emitting elements of the first to third sub-pixels (SP1, SP2, SP3) may generate red light, green light, and blue light, respectively.
[0089] As a display panel (DP), a self-luminous display panel can be used, such as a light-emitting diode display panel (LED display panel) that uses micro-scale or nano-scale light-emitting diodes as light-emitting elements, or an organic light-emitting display panel (OLED panel) that uses organic light-emitting diodes as light-emitting elements.
[0090] Components for controlling sub-pixels (SP) may be arranged in the non-display area (NDA). Wires electrically connected to the sub-pixels (SP), for example, the first to m-th gate lines (GL1 to GLm), the first to n-th data lines (DL1 to DLn), the power lines (PL), and the pixel control lines (PXCL) of FIG. 1, may be arranged in the non-display area (NDA).
[0091] At least one of the gate driver (120), the data driver (130), the voltage generator (140), and the controller (150) of FIG. 1 may be disposed in a non-display area (NDA) of the display panel (DP). In embodiments, the gate driver (120) may be disposed in the non-display area (NDA). The data driver (130), the voltage generator (140), and the controller (150) may be implemented as a driver integrated circuit (DIC) of FIG. 1 that is separate from the display panel (DP), and the driver integrated circuit (DIC) may be electrically connected to wires disposed in the non-display area (NDA). In other embodiments, the gate driver (120) may be implemented as an integrated circuit that is separate from the display panel (DP) together with the data driver (130), the voltage generator (140), and the controller (150).
[0092] In embodiments, the display area (DA) may have various shapes. The display area (DA) may have a closed-loop shape including straight and / or curved edges. For example, the display area (DA) may have shapes such as a polygon, a circle, a semicircle, or an ellipse.
[0093] In some embodiments, the display panel (DP) may have a substantially flat display surface. In other embodiments, the display panel (DP) may have an at least partially rounded display surface. In some embodiments, the display panel (DP) may be bendable, foldable, or rollable. In these cases, the display panel (DP) and / or the substrate of the display panel (DP) may include materials having flexible properties.
[0094] FIG. 4 is a schematic cross-sectional view illustrating one embodiment of the display panel of FIG. 3.
[0095] Referring to FIG. 4, the display panel (DP) may include a substrate (SUB), and a pixel circuit layer (PCL), a display element layer (DPL), and a light functional layer (LFL) that are sequentially stacked on the substrate (SUB) in a third direction (DR3) intersecting the first and second directions (DR1, DR2).
[0096] The substrate (SUB) may be made of an insulating material such as glass or resin. For example, the substrate (SUB) may include a glass substrate. For example, the substrate (SUB) may include a PI (polyimide) substrate. For example, the substrate (SUB) may include a silicon wafer substrate formed using a semiconductor process.
[0097] In the embodiments, the substrate (SUB) may be made of a flexible material that is bendable or foldable, and may have a single-layer structure or a multi-layer structure. For example, the flexible material may include at least one of polystyrene, polyvinyl alcohol, polymethyl methacrylate, polyethersulfone, polyacrylate, polyetherimide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyarylate, polyimide, polycarbonate, triacetate cellulose, and cellulose acetate propionate. However, the embodiments are not limited thereto.
[0098] A pixel circuit layer (PCL) may be disposed on a substrate (SUB). The pixel circuit layer (PCL) may include insulating layers and semiconductor patterns and conductive patterns disposed between the insulating layers. The conductive patterns of the pixel circuit layer (PCL) may function as circuit elements, wirings, etc.
[0099] The circuit elements of the pixel circuit layer (PCL) may include sub-pixel circuits (SPCs of FIG. 2) of each of the sub-pixels (SP) of FIG. 3. In other words, the circuit elements of the pixel circuit layer (PCL) may be provided as transistors of the sub-pixel circuit (SPC) and at least one capacitor.
[0100] The wiring of the pixel circuit layer (PCL) may include wiring electrically connected to sub-pixels (SP). The wiring of the pixel circuit layer (PCL) may include various signal lines and / or voltage lines necessary to drive the display element layer (DPL).
[0101] A display element layer (DPL) may be disposed on a pixel circuit layer (PCL). The display element layer (DPL) may include light-emitting elements of sub-pixels (SP).
[0102] A light-functional layer (LFL) may be disposed on a display element layer (DPL). The light-functional layer (LFL) may include light-functional patterns having color-converting particles and / or scattering particles. For example, the color-converting particles may include quantum dots. The quantum dots may change the wavelength (or color) of light emitted from the display element layer (DPL). The light-functional layer (LFL) may further include light-scattering patterns having scattering particles. In embodiments, the light-functional patterns and the light-scattering patterns may be omitted.
[0103] The light function layer (LFL) may further include a color filter layer including color filters. The color filter may selectively transmit light of a specific wavelength (or color). In some embodiments, the color filter layer may be omitted.
[0104] A window may be provided on a light-functional layer (LFL) to protect an exposed surface (or upper surface) of a display panel (DP). The window may protect the display panel (DP) from external impact. The window may be bonded to the light-functional layer (LFL) via an optically transparent adhesive (or bonding) member. The window may have a multilayer structure selected from a glass substrate, a plastic film, and a plastic substrate. This multilayer structure may be formed through a continuous process or an bonding process using an adhesive layer. All or a portion of the window may be flexible.
[0105] FIG. 5 is a schematic cross-sectional view illustrating one embodiment of the display panel of FIG. 3.
[0106] Referring to FIG. 5, the display panel (DP') may include a substrate (SUB), a pixel circuit layer (PCL), a display element layer (DPL), an input sensing layer (ISL), and a light function layer (LFL). The substrate (SUB), the pixel circuit layer (PCL), the display element layer (DPL), and the light function layer (LFL) may be configured to be substantially the same as (or similar to) the substrate (SUB), the pixel circuit layer (PCL), the display element layer (DPL), and the light function layer (LFL) described with reference to FIG. 4. Therefore, description of overlapping content may be omitted.
[0107] The input sensing layer (ISL) can detect a user's input on the upper surface (or display surface) of the display panel (DP'). The input sensing layer (ISL) may include configurations suitable for detecting an external object, such as a user's hand or pen. For example, the input sensing layer (ISL) may include touch electrodes.
[0108] FIGS. 6 to 8 are schematic drawings for explaining a light-emitting element according to a first embodiment of the present disclosure. FIG. 6 is a plan view for explaining a light-emitting element according to a first embodiment of the present disclosure, FIG. 7 is a schematic cross-sectional view taken along line X1-X1' of FIG. 6, and FIG. 8 is a schematic cross-sectional view taken along line Y1-Y1' of FIG. 6.
[0109] Referring to FIGS. 6 to 8, the light-emitting element (LDa) may include a light-emitting layer (EST), a first bonding electrode (BDE1), and a second bonding electrode (BDE2).
[0110] The light-emitting stack (EST) may include a first semiconductor layer (11), a second semiconductor layer (12) disposed on the first semiconductor layer (11), and an active layer (13) disposed between the first semiconductor layer (11) and the second semiconductor layer (12). In embodiments, the light-emitting stack (EST) may further include an auxiliary layer (14) disposed on the second semiconductor layer (12).
[0111] The first semiconductor layer (11) provides holes to the active layer (13). The first semiconductor layer (11) may include at least one p-type semiconductor layer. For example, the first semiconductor layer (11) may include at least one semiconductor material among gallium nitride (GaN), aluminum gallium nitride (AlGaN), indium gallium nitride (InGaN), aluminum nitride (AlN), and indium nitride (InN), and may be a p-type semiconductor layer doped with a p-type dopant such as magnesium (Mg), zinc (Zn), calcium (Ca), strontium (Sr), barium (Ba), or the like. However, the material constituting the first semiconductor layer (11) is not limited thereto, and various other materials may constitute the first semiconductor layer (11). In one embodiment, the first semiconductor layer (11) may include a gallium nitride (GaN) semiconductor material doped with a p-type dopant.
[0112] The second semiconductor layer (12) provides electrons to the active layer (13). The second semiconductor layer (12) may include at least one n-type semiconductor layer. For example, the second semiconductor layer (12) may include at least one semiconductor material among gallium nitride (GaN), aluminum gallium nitride (AlGaN), indium gallium nitride (InGaN), aluminum nitride (AlN), and indium nitride (InN), and may be an n-type semiconductor layer doped with an n-type dopant such as silicon (Si), germanium (Ge), or tin (Sn). However, the material constituting the second semiconductor layer (12) is not limited thereto, and various other materials may constitute the second semiconductor layer (12). In one embodiment, the second semiconductor layer (12) may include a gallium nitride (GaN) semiconductor material doped with an n-type dopant. According to an embodiment, the second semiconductor layer (12) may form an n-type semiconductor layer together with the auxiliary layer (14).
[0113] The active layer (13) is disposed between the first semiconductor layer (11) and the second semiconductor layer (12), and can provide a region where electrons and holes recombine. As electrons and holes recombine in the active layer (13), they transition to a lower energy level, and light having a corresponding wavelength can be generated. The active layer (13) can be formed in a single or multiple quantum well structure. When the active layer (13) is formed in a multiple quantum well structure, units including a barrier layer, a strain reinforcing layer, and a well layer can be repeatedly stacked on each other to form the active layer (13). However, embodiments of the active layer (13) are not limited thereto.
[0114] The auxiliary layer (14) may include a gallium nitride (GaN) semiconductor material that is substantially not doped with impurities or is doped with impurities at a relatively low concentration, and may form an n-type semiconductor layer together with the second semiconductor layer (12).
[0115] The first bonding electrode (BDE1) may be electrically connected to the lower surface of the first semiconductor layer (11). The first bonding electrode (BDE1) may not be in physical contact with the second semiconductor layer (12) and the active layer (13). In embodiments, the first bonding electrode (BDE1) may include a eutectic metal.
[0116] The first bonding electrode (BDE1) may be electrically connected to the anode electrode (AE in FIG. 2). For example, the first bonding electrode (BDE1) may be electrically connected to the anode electrode (AE), or may be electrically connected to at least one electrode (or conductive layer) that contacts the anode electrode (AE).
[0117] The second bonding electrode (BDE2) may include a second-first bonding electrode (BDE2-1) and a second-second bonding electrode (BDE2-2).
[0118] The second-first bonding electrode (BDE2-1) may be electrically connected to the second semiconductor layer (12). The second-second bonding electrode (BDE2-2) may be electrically connected to the second semiconductor layer (12). The second-second bonding electrode (BDE2-2) may be spaced apart from the second-first bonding electrode (BDE2-1) in the second direction (DR2). The second-first bonding electrode (BDE2-1) may not be in physical contact with the first semiconductor layer (11), the active layer (13), the first bonding electrode (BDE1), and the second-second bonding electrode (BDE2-2). The second-second bonding electrode (BDE2-2) may not be in physical contact with the first semiconductor layer (11), the active layer (13), the first bonding electrode (BDE1), and the second-first bonding electrode (BDE2-1). In the embodiments, the second-1 bonding electrode (BDE2-1) and the second-2 bonding electrode (BDE2-2) may include a eutectic metal.
[0119] The second-first bonding electrode (BDE2-1) and the second-second bonding electrode (BDE2-2) may be electrically connected to a cathode electrode (CE in FIG. 2). For example, each of the second-first bonding electrode (BDE2-1) and the second-second bonding electrode (BDE2-2) may be electrically connected to the cathode electrode (CE), or may be electrically connected to at least one electrode (or conductive layer) that contacts the cathode electrode (CE).
[0120] The first bonding electrode (BDE1) may be disposed between the second-first bonding electrode (BDE2-1) and the second-second bonding electrode (BDE2-2). Accordingly, a separation distance between the first bonding electrode (BDE1) and the second-first bonding electrode (BDE2-1) and a separation distance between the first bonding electrode (BDE1) and the second-second bonding electrode (BDE2-2) may be relatively reduced. Accordingly, the current distribution within the light-emitting element (LDa) may become more uniform, and thus the light-emitting efficiency of the light-emitting element (LDa) may be improved.
[0121] In one embodiment, a first exposed surface (ES1) and a second exposed surface (ES2) that do not overlap the first semiconductor layer (11) and the active layer (13) on a plane may be defined on the opposite surface of the second semiconductor layer (12) facing the outer surface of the active layer (13). For example, the first exposed surface (ES1) and the second exposed surface (ES2) may be surfaces where the second semiconductor layer (12) is exposed by removing a portion of the first semiconductor layer (11) and the active layer (13). The first exposed surface (ES1) may be adjacent to one side of the second semiconductor layer (12), and the second exposed surface (ES2) may be adjacent to the other side of the second semiconductor layer (12) that is opposite to the one side in the second direction (DR2). The second-first bonding electrode (BDE2-1) may be electrically connected to the first exposed surface (ES1), and the second-second bonding electrode (BDE2-2) may be electrically connected to the second exposed surface (ES2).
[0122] In one embodiment, the first bonding electrode (BDE1) may include a first protrusion (PRT1) that protrudes in at least one of a first direction (DR1) and a direction opposite to the first direction (DR1) so as not to overlap with the light-emitting stack (EST) on a planar surface. For example, as illustrated in FIG. 6, the first bonding electrode (BDE1) may include a first protrusion (PRT1) that protrudes in the first direction (DR1) and in a direction opposite to the first direction (DR1) relative to the light-emitting stack (EST). However, embodiments of the first protrusion (PRT1) are not limited to those illustrated in FIG. 6. For example, the first bonding electrode (BDE1) may include a first protrusion that protrudes only in the first direction (DR1) relative to the light-emitting stack (EST), or may include a first protrusion that protrudes only in a direction opposite to the first direction (DR1) relative to the light-emitting stack (EST).
[0123] According to embodiments, a connection failure between the first bonding electrode (BDE1) and the anode electrode (AE) may occur. For example, the first bonding electrode (BDE1) and the anode electrode (AE) may not be electrically connected to each other due to a foreign substance disposed between the first bonding electrode (BDE1) and the anode electrode (AE). In the present disclosure, the first protrusion (PRT1) of the first bonding electrode (BDE1) may serve to secure a connection path between the first bonding electrode (BDE1) and the anode electrode (AE) when a connection failure with the anode electrode (AE) described above occurs. This will be described in detail later with reference to FIG. 11.
[0124] In one embodiment, the second-first bonding electrode (BDE2-1) may include a second-first protrusion (PRT2-1) that protrudes in a direction opposite to the second direction (DR2) so as not to overlap with the planar light-emitting stack (EST). The second-first protrusion (PRT2-1) of the second-first bonding electrode (BDE2-1) may serve to secure a connection path between the second-first bonding electrode (BDE2-1) and the cathode electrode (CE) when a connection failure occurs with the cathode electrode (CE of FIG. 2). For example, in a case where the second-first bonding electrode (BDE2-1) and the cathode electrode (CE) are not electrically connected to each other due to a foreign substance disposed between the second-first bonding electrode (BDE2-1) and the cathode electrode (CE), a connection path between the second-first bonding electrode (BDE2-1) and the cathode electrode (CE) can be secured through the second-first protrusion (PRT2-1). This will be described in detail later with reference to FIG. 10.
[0125] In one embodiment, the second-second bonding electrode (BDE2-2) may include a second-second protrusion (PRT2-2) that protrudes in the second direction (DR2) so as not to overlap with the planar light-emitting stack (EST). The second-second protrusion (PRT2-2) of the second-second bonding electrode (BDE2-2) may serve to secure a connection path between the second-second bonding electrode (BDE2-2) and the cathode electrode (CE) when a connection failure occurs with the cathode electrode (CE). This will be described in detail later with reference to FIG. 10.
[0126] In one embodiment, the light emitting element (LDa) may further include an insulating film (15) surrounding at least a portion of the outer surface of the light emitting stack (EST). For example, the insulating film (15) may entirely surround the outer surface of the light emitting stack (EST) except for a region where the light emitting stack (EST) and the first and second bonding electrodes (BDE1, BDE2) are electrically connected.
[0127] The insulating film (15) can serve to prevent an electrical short circuit that may occur when the active layer (13) comes into contact with a conductive material other than the first and second semiconductor layers (11, 12). The insulating film (15) is disposed between the 2-1 bonding electrode (BDE2-1) and the first semiconductor layer (11), and between the 2-1 bonding electrode (BDE2-1) and the active layer (13), so as to prevent an electrical short circuit that may occur when the 2-1 bonding electrode (BDE2-1) comes into contact with the first semiconductor layer (11) and the active layer (13). An insulating film (15) is disposed between the second-second bonding electrode (BDE2-2) and the first semiconductor layer (11), and between the second-second bonding electrode (BDE2-2) and the active layer (13), so as to prevent an electrical short circuit that may occur when the second-second bonding electrode (BDE2-2) comes into contact with the first semiconductor layer (11) and the active layer (13). The insulating film (15) may include a transparent insulating material. Some of the first and second bonding electrodes (BDE1, BDE2) may be exposed without being covered by the insulating film (15).
[0128] Even when the light emitting element (LDa) further includes an insulating film (15), each of the first protrusion (PRT1) of the first bonding electrode (BDE1), the second-first protrusion (PRT2-1) of the second-first bonding electrode (BDE2-1), and the second-second protrusion (PRT2-2) of the second-second bonding electrode (BDE2-2) may protrude further than the insulating film (15) on the plane.
[0129] In one embodiment, the light emitting element (LDa) may further include a reflective layer (16) surrounding at least a portion of a side surface of the light emitting stack (EST). For example, the reflective layer (16) may surround a side surface of the auxiliary layer (14) and a portion of a side surface of the second semiconductor layer (12) above the second bonding electrode (BDE2).
[0130] The reflective layer (16) can play a role in improving the front emission efficiency of light generated from the active layer (13). For example, an insulating film (15) can be disposed between the reflective layer (16) and the light-emitting stack (EST), and the reflective layer (16) can include a material having a different refractive index from the insulating film (15). Accordingly, total reflection of light can be induced at the interface between the reflective layer (16) and the insulating film (15), so that the light generated from the active layer (13) can travel in the front direction of the display panel (DP of FIG. 3) (e.g., the third direction (DR3) and a direction crossing therewith). For example, the reflective layer (16) can include a material suitable for reflecting incident light. For example, the reflective layer (16) may include at least one of aluminum (Al), silver (Ag), magnesium (Mg), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), titanium (Ti), and an alloy of two or more materials selected from these.
[0131] In one embodiment, the reflective layer (16) may be in contact with each of the second-first bonding electrode (BDE2-1) and the second-second bonding electrode (BDE2-2). For example, as illustrated in FIG. 7, the reflective layer (16) may be in contact with each of the second-first protrusion (PRT2-1 of FIG. 6) of the second-first bonding electrode (BDE2-1) and the second-second protrusion (PRT2-2 of FIG. 6) of the second-second bonding electrode (BDE2-2). The reflective layer (16) may be configured to include a conductive material. Accordingly, the second-first bonding electrode (BDE2-1) and the second-second bonding electrode (BDE2-2) may be electrically connected to each other by the reflective layer (16). Accordingly, even if a poor connection occurs between one of the 2-1 bonding electrode (BDE2-1) and the 2-2 bonding electrode (BDE2-2) and the cathode electrode (CE), if the other of the 2-1 bonding electrode (BDE2-1) and the 2-2 bonding electrode (BDE2-2) is normally electrically connected to the cathode electrode (CE), both the 2-1 bonding electrode (BDE2-1) and the 2-2 bonding electrode (BDE2-2) can be electrically connected to the cathode electrode (CE) through the reflective layer (16). For example, the reflective layer (16) can further play a role in ensuring the reliability of the 2-1 bonding electrode (BDE2-1) and the 2-2 bonding electrode (BDE2-2).
[0132] In the above-described embodiment, the reflective layer (16) may be spaced apart from the first bonding electrode (BDE1). For example, when the reflective layer (16) electrically connects the 2-1 bonding electrode (BDE2-1) and the 2-2 bonding electrode (BDE2-2) to each other, the first bonding electrode (BDE1) may be spaced apart from the reflective layer (16). Accordingly, an electrical short circuit may not occur in which the first bonding electrode (BDE1) is electrically connected to the 2-1 bonding electrode (BDE2-1) and the 2-2 bonding electrode (BDE2-2) through the reflective layer (16).
[0133] Even when the light emitting element (LDa) further includes a reflective layer (16), each of the first protrusion (PRT1) of the first bonding electrode (BDE1), the second-first protrusion (PRT2-1) of the second-first bonding electrode (BDE2-1), and the second-second protrusion (PRT2-2) of the second-second bonding electrode (BDE2-2) may protrude further than the planar reflective layer (16).
[0134] FIGS. 9 to 11 are schematic drawings for explaining a sub-pixel including a light-emitting element according to the first embodiment of the present disclosure. FIG. 9 is a plan view for explaining a sub-pixel including a light-emitting element according to the first embodiment of the present disclosure, FIG. 10 is a schematic cross-sectional view taken along line I1-I1' of FIG. 9, and FIG. 11 is a schematic cross-sectional view taken along line J1-J1' of FIG. 9.
[0135] Referring to FIG. 9, a sub-pixel (SPa) may be provided. The sub-pixel (SPa) may be any one of the first to third sub-pixels (SP1, SP2, SP3) described with reference to FIG. 3.
[0136] A sub-pixel (SPa) may include an anode electrode (AE) and a cathode electrode (CE). The anode electrode (AE) may be electrically connected to a sub-pixel circuit (SPC of FIG. 2) of the sub-pixel (SPa). The cathode electrode (CE) may be spaced apart from the anode electrode (AE). The cathode electrode (CE) may be arranged at the same height as the anode electrode (AE). The anode electrode (AE) and the cathode electrode (CE) may define an electrode layer, and the anode electrode (AE) and the cathode electrode (CE) may be implemented as patterns of the electrode layer. In embodiments, the cathode electrode (CE) may extend in a first direction (DR1) and may be used as a common electrode for the pixel (PXL) and other pixels adjacent to the pixel (PXL). The cathode electrode (CE) may extend in a second direction (DR2) and may be used as a common electrode for all of the sub-pixels (SP) illustrated in FIG. 3.
[0137] The anode electrode (AE) may include a first contact portion (CTP1). The cathode electrode (CE) may include a second-first contact portion (CTP2-1) and a second-second contact portion (CTP2-2). The second-first contact portion (CTP2-1) and the second-second contact portion (CTP2-2) may be electrically connected to each other.
[0138] The light-emitting element (LDa) described with reference to FIGS. 6 to 8 may be disposed on the anode electrode (AE) and the cathode electrode (CE). The first bonding electrode (BDE1) of the light-emitting element (LDa) may be disposed on the first contact portion (CTP1) of the anode electrode (AE). The second-first bonding electrode (BDE2-1) of the light-emitting element (LDa) may be disposed on the second-first contact portion (CTP2-1) of the cathode electrode (CE). The second-second bonding electrode (BDE2-2) of the light-emitting element (LDa) may be disposed on the second-second contact portion (CTP2-2) of the cathode electrode (CE).
[0139] The light-emitting element (LDa) can be electrically connected to the anode electrode (AE) and the cathode electrode (CE). The first bonding electrode (BDE1) of the light-emitting element (LDa) can be electrically connected to the anode electrode (AE). The second-first bonding electrode (BDE2-1) and the second-second bonding electrode (BDE2-2) of the light-emitting element (LDa) can be electrically connected to the cathode electrode (CE).
[0140] Referring to FIGS. 9 to 11, a pixel circuit layer (PCL), a display element layer (DPL), and a light function layer (LFL) can be sequentially arranged on a substrate (SUB).
[0141] A pixel circuit layer (PCL) may include insulating layers, semiconductor patterns, and conductive patterns stacked on a substrate (SUB). The insulating layers may include a buffer layer (BFL), at least one interlayer insulating layer (ILD), and at least one passivation layer (PSV1, PSV2). The semiconductor patterns and the conductive patterns may be positioned between the insulating layers. The conductive patterns may include at least one of copper (Cu), molybdenum (Mo), tungsten (W), aluminum neodymium (AlNd), titanium (Ti), aluminum (Al), and silver (Ag).
[0142] As described with reference to FIG. 2, the sub-pixel circuit (SPC) of the sub-pixel (SP) may include transistors and at least one capacitor. Semiconductor patterns and conductive patterns of the pixel circuit layer (PCL) may function as transistors and capacitors of the sub-pixel circuit (SPC). The conductive patterns of the pixel circuit layer (PCL) may further function as wirings, for example, the first to m-th gate lines (GL1 to GLm), the first to n-th data lines (DL1 to DLn), the power lines (PL), and the pixel control lines (PXCL) of FIG. 1.
[0143] A buffer layer (BFL) may be disposed on one surface of a substrate (SUB). The buffer layer (BFL) may serve to prevent impurities from diffusing into circuit elements and wirings included in a pixel circuit layer (PCL). The buffer layer (BFL) may include an inorganic insulating layer including an inorganic material. In embodiments, the buffer layer (BFL) may include at least one of a metal oxide such as silicon nitride, silicon oxide, silicon oxynitride, and aluminum oxide. The buffer layer (BFL) may be provided as a single layer or multiple layers. When the buffer layer (BFL) is provided as multiple layers, each layer may be formed of the same material or different materials.
[0144] In embodiments, at least one barrier layer may be disposed between the substrate (SUB) and the buffer layer (BFL). Each of the barrier layers may include polyimide.
[0145] A transistor (T_SP) may be placed on the buffer layer (BFL). The transistor (T_SP) may be any one of the transistors of the sub-pixel circuit (SPC) included in the sub-pixel (SP). For example, the transistor (T_SP) may be a transistor electrically connected to the anode electrode (AE) among the transistors of the sub-pixel circuit (SPC).
[0146] A transistor (T_SP) may include a semiconductor pattern (SCP), a gate electrode (GE), a first terminal (ET1), and a second terminal (ET2). The first terminal (ET1) may be either a source electrode or a drain electrode, and the second terminal (ET2) may be the other of the source electrode and the drain electrode. For example, the first terminal (ET1) may be a source electrode, and the second terminal (ET2) may be a drain electrode.
[0147] A semiconductor pattern (SCP) may be disposed on a buffer layer (BFL). The semiconductor pattern (SCP) may include a first contact region contacting a first terminal (ET1) and a second contact region contacting a second terminal (ET2). A region between the first contact region and the second contact region may be a channel region. The channel region may overlap a gate electrode (GE) of the transistor (T_SP). The channel region may be a semiconductor pattern that is not doped with impurities and may be an intrinsic semiconductor. The first contact region and the second contact region may be semiconductor patterns doped with impurities. As the impurities, for example, a p-type impurity may be used, but embodiments are not limited thereto.
[0148] The semiconductor pattern (SCP) may include any one of various types of semiconductors, for example, an amorphous silicon semiconductor, a monocrystalline silicon semiconductor, a polycrystalline silicon semiconductor, a low temperature poly silicon semiconductor, and an oxide semiconductor.
[0149] Interlayer insulating layers (ILDs) sequentially stacked on a semiconductor pattern (SCP) may be arranged. The interlayer insulating layers (ILDs) may be inorganic insulating layers including inorganic materials. For example, each of the interlayer insulating layers (ILDs) may include at least one of a metal oxide such as silicon nitride, silicon oxide, silicon oxynitride, or aluminum oxide. However, the interlayer insulating layers (ILDs) are not limited thereto. For example, any one of the interlayer insulating layers (ILDs) may include an organic insulating layer including an organic material.
[0150] Interlayer insulating layers (ILDs) can electrically isolate conductive patterns and / or semiconductor patterns disposed between the interlayer insulating layers (ILDs). For example, the interlayer insulating layers (ILDs) can include a gate insulating layer (GI) disposed on a semiconductor pattern (SCP). The gate insulating layer (GI) can be disposed between the semiconductor pattern (SCP) and the gate electrode (GE) such that the gate electrode (GE) is spaced apart from the semiconductor pattern (SCP). In embodiments, the gate insulating layer (GI) can be provided over the entire surface of the semiconductor pattern (SCP) and the buffer layer (BFL) to cover the semiconductor pattern (SCP) and the buffer layer (BFL). As the number of layers required for forming the conductive patterns and / or semiconductor patterns increases, the number of interlayer insulating layers (ILDs) can increase.
[0151] A gate electrode (GE) may be disposed on a gate insulating layer (GI). The gate electrode (GE) may overlap a channel region of a semiconductor pattern (SCP). In embodiments, the gate electrode (GE) may be provided as a single layer including at least one material selected from the group consisting of copper (Cu), molybdenum (Mo), tungsten (W), aluminum neodymium (AlNd), titanium (Ti), aluminum (Al), and silver (Ag). In embodiments, the gate electrode (GE) may be provided as a multilayer including at least one material selected from the group consisting of molybdenum (Mo), titanium (Ti), copper (Cu), aluminum (Al), and silver (Ag).
[0152] The first and second terminals (ET1, ET2) may be disposed on interlayer insulating layers (ILD). The first and second terminals (ET1, ET2) may contact a semiconductor pattern (SCP) through contact holes penetrating the interlayer insulating layers (ILD). The first and second terminals (ET1, ET2) may contact first and second contact areas of the semiconductor pattern (SCP), respectively. Each of the first and second terminals (ET1, ET2) may include at least one material selected from the group consisting of copper (Cu), molybdenum (Mo), tungsten (W), aluminum neodymium (AlNd), titanium (Ti), aluminum (Al), and silver (Ag).
[0153] Although the first and second terminals (ET1, ET2) are illustrated as separate electrodes electrically connected to the semiconductor pattern (SCP), the embodiments are not limited thereto. In the embodiments, the first terminal (ET1) may be a first contact region adjacent to one side of the channel region of the semiconductor pattern (SCP), and the second terminal (ET2) may be a second contact region adjacent to the other side of the channel region. The first terminal (ET1) may be electrically connected to the light emitting element (LD) via a connecting means, such as a bridge electrode, disposed on at least one of the interlayer insulating layers (ILD).
[0154] In embodiments, the transistor (T_SP) may be formed of a low-temperature polysilicon transistor. However, the embodiments are not limited thereto. For example, the transistor (T_SP) may also be formed of an oxide semiconductor transistor. In embodiments, the sub-pixel circuit (SPC) of the sub-pixel (SP) may include transistors of different types. For example, the transistor (T_SP) may be formed of a low-temperature polysilicon transistor, and the other transistors of the sub-pixel (SP) may be formed of oxide semiconductor transistors. The oxide semiconductor of the oxide semiconductor transistor may be formed on any one of the interlayer insulating layers (ILD) other than the insulating layer on which the semiconductor pattern (SCP) of the transistor (T_SP) is formed.
[0155] In the embodiments, the transistor (T_SP) is described as a transistor having a top gate structure, but the embodiments are not limited thereto. For example, the transistor (T_SP) may be a transistor having a bottom gate structure. The structure of the transistor (T_SP) may be changed in various ways.
[0156] At least some of the various wirings of the display panel (DP) and / or display device (DD) may be further arranged on the interlayer insulating layers (ILD).
[0157] A first passivation layer (PSV1) may be disposed over the interlayer insulating layers (ILD) and the first and second terminals (ET1, ET2). The passivation layer may also be referred to as a protective layer or a via layer. The first passivation layer (PSV1) protects components disposed beneath the first passivation layer (PSV1) and may provide a substantially flat upper surface.
[0158] A connection electrode (CP) may be disposed on the first passivation layer (PSV1). The connection electrode (CP) may penetrate the first passivation layer (PSV1) and be electrically connected to the first terminal (ET1) of the transistor (T_SP). The connection electrode (CP) may include at least one material selected from the group consisting of copper (Cu), molybdenum (Mo), tungsten (W), aluminum neodymium (AlNd), titanium (Ti), aluminum (Al), and silver (Ag).
[0159] At least some of the various wires of the display panel (DP) and / or the display device (DD) may be further arranged on the first passivation layer (PSV1).
[0160] A second passivation layer (PSV2) may be disposed on the connecting electrode (CP) and the first passivation layer (PSV1). The second passivation layer (PSV2) protects components disposed beneath the second passivation layer (PSV2) and may provide a substantially flat upper surface.
[0161] Each of the first and second passivation layers (PSV1, PSV2) may include an inorganic insulating layer including an inorganic material and / or an organic insulating layer including an organic material. The inorganic insulating layer may include, for example, at least one of a metal oxide such as silicon oxide, silicon nitride, silicon oxynitride, or aluminum oxide. The organic insulating layer may include, for example, at least one of an acrylic resin, an epoxy resin, a phenol resin, a polyamide resin, a polyimide resin, an unsaturated polyester resin, a polyphenylene ether resin, a polyphenylene sulfide resin, and a benzocyclobutene resin.
[0162] A display element layer (DPL) may be disposed on a second passivation layer (PSV2). The display element layer (DPL) may include an anode electrode (AE), a cathode electrode (CE), a first bank (BNK1), a first reflective electrode (RFE1), a second-first reflective electrode (RFE2-1), a second-second reflective electrode (RFE2-2), a light-emitting element (LDa), an overcoat layer (OCL), a third passivation layer (PSV3), and a capping layer (CPL).
[0163] An electrode layer including an anode electrode (AE) and a cathode electrode (CE) may be disposed on a pixel circuit layer (PCL). The anode electrode (AE) may include a first contact portion (CTP1), and the cathode electrode (CE) may include a second-first contact portion (CTP2-1) and a second-second contact portion (CTP2-2).
[0164] The anode electrode (AE) can be electrically connected to the connection electrode (CP) through a contact hole (CNTH) penetrating the second passivation layer (PSV2). In this way, the anode electrode (AE) can be electrically connected to the transistor (T_SP).
[0165] The second-first contact portion (CTP2-1) can be spaced apart from the first contact portion (CTP1) in a direction opposite to the second direction (DR2). The second-second contact portion (CTP2-2) can be spaced apart from the first contact portion (CTP1) in the second direction (DR2). The cathode electrode (CE) can be electrically connected to the second power voltage node (VSSN) of FIG. 2. Accordingly, the second power voltage applied to the second power voltage node (VSSN) can be transmitted to the second-first contact portion (CTP2-1) and the second-second contact portion (CTP2-2).
[0166] A first bank (BNK1) may be disposed on an anode electrode (AE) and a cathode electrode (CE). The first bank (BNK1) may have a first opening (OP1) exposing portions of the anode electrode (AE) and the cathode electrode (CE). A light-emitting element (LDa) may be disposed in the first opening (OP1) of the first bank (BNK1). In this way, the first bank (BNK1) may be provided as a pixel defining film that defines an area where the light-emitting element (LDa) is positioned.
[0167] The first bank (BNK1) is configured to include a light-blocking material and may serve to prevent light mixing between adjacent sub-pixels. In embodiments, the first bank (BNK1) may include an organic material. For example, the first bank (BNK1) may include an organic insulating material such as an acrylic resin, an epoxy resin, a phenol resin, a polyamide resin, a polyimide resin, or a combination thereof.
[0168] A first reflective electrode (RFE1) may be disposed on an exposed portion of a first contact portion (CTP1) and a side surface of a first bank (BNK1) adjacent thereto. A second-first reflective electrode (RFE2-1) may be disposed on an exposed portion of a second-first contact portion (CTP2-1) and a side surface of a first bank (BNK1) adjacent thereto. A second-second reflective electrode (RFE2-2) may be disposed on an exposed portion of a second-second contact portion (CTP2-2) and a side surface of a first bank (BNK1) adjacent thereto. The first reflective electrode (RFE1), the second-first reflective electrode (RFE2-1), and the second-second reflective electrode (RFE2-2) may include conductive materials suitable for reflecting light. Accordingly, the light emission efficiency of the light-emitting element (LDa) may be improved. In the embodiments, the first reflective electrode (RFE1), the second-first reflective electrode (RFE2-1), and the second-second reflective electrode (RFE2-2) may include at least one of aluminum (Al), silver (Ag), magnesium (Mg), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), titanium (Ti), and an alloy of two or more materials selected therefrom. However, the embodiments are not limited thereto.
[0169] The light emitting element (LDa) can be electrically connected to the first contact portion (CTP1) of the anode electrode (AE) via the first reflective electrode (RFE1). For example, the first bonding electrode (BDE1) of the light emitting element (LDa) is electrically connected to the first reflective electrode (RFE1), and thus, the first bonding electrode (BDE1) can be electrically connected to the first contact portion (CTP1) of the anode electrode (AE) via the first reflective electrode (RFE1).
[0170] The light-emitting element (LDa) can be electrically connected to the second-first contact portion (CTP2-1) of the cathode electrode (CE) via the second-first reflective electrode (RFE2-1). For example, the second-first bonding electrode (BDE2-1) of the light-emitting element (LDa) is electrically connected to the second-first reflective electrode (RFE2-1), and thus, the second-first bonding electrode (BDE2-1) can be electrically connected to the second-first contact portion (CTP2-1) of the cathode electrode (CE) via the second-first reflective electrode (RFE2-1).
[0171] The light-emitting element (LDa) can be electrically connected to the second-second contact portion (CTP2-2) of the cathode electrode (CE) via the second-second reflective electrode (RFE2-2). For example, the second-second bonding electrode (BDE2-2) of the light-emitting element (LDa) is electrically connected to the second-second reflective electrode (RFE2-2), and thus, the second-second bonding electrode (BDE2-2) can be electrically connected to the second-second contact portion (CTP2-2) of the cathode electrode (CE) via the second-second reflective electrode (RFE2-2).
[0172] An overcoat layer (OCL) may be disposed within a first opening (OP1) in which a first reflective electrode (RFE1), a second-first reflective electrode (RFE2-1), a second-second reflective electrode (RFE2-2), and a light-emitting element (LDa) are disposed. The overcoat layer (OCL) may fix the light-emitting element (LDa) electrically connected to the first reflective electrode (RFE1), the second-first reflective electrode (RFE2-1), and the second-second reflective electrode (RFE2-2) so as not to move. The overcoat layer (OCL) may protect components disposed below the overcoat layer (OCL) from foreign substances such as dust, moisture, and the like. For example, the overcoat layer (OCL) may include at least one of an inorganic insulating layer and an organic insulating layer. For example, the overcoat layer (OCL) may include epoxy, but embodiments are not limited thereto.
[0173] A third passivation layer (PSV3) may be disposed on the first bank (BNK1) and the overcoat layer (OCL). The third passivation layer (PSV3) protects components disposed beneath the third passivation layer (PSV3) and may provide a substantially flat upper surface. The third passivation layer (PSV3) and either of the first and second passivation layers (PSV1, PSV2) may include the same material, but embodiments are not limited thereto.
[0174] In some embodiments, the third passivation layer (PSV3) may not be disposed on the upper surface of the light-emitting element (LDa). The light-emitting element (LDa) may protrude into the light-functional layer (LFL). The light-emitting element (LDa) may be at least partially positioned within the second opening (OP2) of the second bank (BNK2). For example, the height of the upper surface of the light-emitting element (LDa) from the substrate (SUB) may be higher than the lowermost portion of the light-reflecting layer (RFL). Accordingly, light emitted from the light-emitting element (LDa) may be provided to the light-functional layer (LFL) at a relatively high rate.
[0175] The capping layer (CPL) may be disposed on the third passivation layer (PSV3). The capping layer (CPL) may protect components under the capping layer (CPL), such as the light-emitting element (LDa), from external moisture and humidity. In some embodiments, the capping layer (CPL) may not be disposed on the upper surface of the light-emitting element (LDa). In other embodiments, the capping layer (CPL) may entirely cover the light-emitting element (LDa). The capping layer (CPL) may include at least one of a metal oxide such as silicon nitride, silicon oxide, silicon oxynitride, and aluminum oxide. However, the material of the capping layer (CPL) is not limited thereto.
[0176] A light functional layer (LFL) may be disposed on the capping layer (CPL). The light functional layer (LFL) may include a second bank (BNK2), a light reflecting layer (RFL), a fourth passivation layer (PSV4), a light functional pattern (CCP), a low refractive index layer (LRL), and a color filter layer (CFL).
[0177] A second bank (BNK2) may be disposed on the capping layer (CPL). The second bank (BNK2) may overlap the first bank (BNK1). The second bank (BNK2) may have a second opening (OP2) that overlaps the first opening (OP1).
[0178] The second bank (BNK2) may be configured to include a light-blocking material, and may prevent light mixing between adjacent sub-pixels. In some embodiments, the second bank (BNK2) may include an organic material. For example, the second bank (BNK2) may include an organic insulating material such as an acrylic resin, an epoxy resin, a phenol resin, a polyamide resin, a polyimide resin, or a combination thereof.
[0179] A light reflective layer (RFL) may be disposed on side surfaces of the second bank (BNK2) adjacent to the second opening (OP2). The light reflective layer (RFL) may be configured to reflect incident light, thereby improving light emission efficiency. The light reflective layer (RFL) may include a material suitable for reflecting light. The light reflective layer (RFL) may include at least one of aluminum (Al), silver (Ag), magnesium (Mg), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), titanium (Ti), and an alloy of two or more materials selected therefrom. However, the embodiments are not limited thereto.
[0180] A fourth passivation layer (PSV4) may be disposed on the capping layer (CPL) within the second opening (OP2). The fourth passivation layer (PSV4) may protect components disposed beneath the fourth passivation layer (PSV4) and may provide a substantially flat upper surface. The fourth passivation layer (PSV4) and any one of the first to third passivation layers (PSV1, PSV2, PSV3) may include the same material, but embodiments are not limited thereto.
[0181] On the fourth passivation layer (PSV4), a photo-functional pattern (CCP) can be arranged within the second opening (OP2).
[0182] The color-converting particle (CCP) may include color-converting particles and / or scattering particles. The color-converting particles may change the wavelength of incident light, thereby converting the incident light into light of a different color. The color-converting particles may scatter the incident light. In embodiments, the color-converting particles may be quantum dots. The scattering particles may scatter the incident light.
[0183] In one embodiment, the sub-pixel (SPa) may be a red sub-pixel. When the light-emitting element (LDa) emits blue light, the light function pattern (CCP) may include color conversion particles (QDs) configured to convert blue light into red light. When the light-emitting element (LDa) emits red light, the light function pattern (CCP) may include scattering particles.
[0184] In one embodiment, the sub-pixel (SPa) may be a green sub-pixel. When the light-emitting element (LDa) emits blue light, the light function pattern (CCP) may include color conversion particles (QDs) configured to convert blue light into green light. When the light-emitting element (LDa) emits green light, the light function pattern (CCP) may include scattering particles.
[0185] In one embodiment, the sub-pixel (SPa) may be a blue sub-pixel. When the light-emitting element (LDa) emits blue light, the light function pattern (CCP) may include scattering particles.
[0186] In this way, depending on the color of light emitted from the light-emitting element (LDa), the particles included in the light-functional pattern (CCP) can be varied.
[0187] A low-refractive-index layer (LRL) may be disposed on the second bank (BNK2), the optical reflection layer (RFL), and the optical function pattern (CCP). The low-refractive-index layer (LRL) may have a lower refractive index than the optical function pattern (CCP). The low-refractive-index layer (LRL) may be configured to refract or totally reflect light depending on the incident angle of the light. For example, the low-refractive-index layer (LRL) may provide light that has passed through the optical function pattern (CCP) back to the optical function pattern (CCP). Accordingly, the light conversion efficiency or light scattering efficiency of the optical function pattern (CCP) may be improved.
[0188] A color filter layer (CFL) may be disposed on a low refractive index layer (LRL). The color filter layer (CFL) may include a color filter (CF) and light-blocking patterns (LBP). The color filter (CF) may overlap a light-functional pattern (CCP). The color filter (CF) may selectively transmit light of a desired wavelength range. When the sub-pixel (SPa) is a red sub-pixel, the color filter (CF) may include a red color filter. When the sub-pixel (SPa) is a green sub-pixel, the color filter (CF) may include a green color filter. The light-blocking patterns (LBP) may include at least one of various types of light-blocking materials.
[0189] Referring again to FIGS. 6 to 9 and 11, a first bridge electrode (BRE1) may be further disposed to ensure reliability of the electrical connection between the first bonding electrode (BDE1) and the first contact portion (CTP1).
[0190] In one embodiment, the first bonding electrode (BDE1) may be normally electrically connected to the first reflective electrode (RFE1) that is in electrical contact with the first contact portion (CTP1). For example, in a process of arranging a light-emitting element (LDa) on a pixel circuit layer (PCL), the first bonding electrode (BDE1) may be electrically connected to the first contact portion (CTP1). The first bridge electrode (BRE1) may be omitted.
[0191] In one embodiment, the first bonding electrode (BDE1) may not be normally electrically connected to the first reflective electrode (RFE1) that is in electrical contact with the first contact portion (CTP1). For example, in a process of arranging a light-emitting element (LDa) on a pixel circuit layer (PCL), the first bonding electrode (BDE1) may not be electrically connected to the first contact portion (CTP1). In this case, if a connection failure is sensed through a subsequent light-emitting inspection process or the like, a first bridge electrode (BRE1) may be arranged to electrically connect the first bonding electrode (BDE1) and the first contact portion (CTP1).
[0192] The first bridge electrode (BRE1) may be arranged along the outer surface of the first protrusion (PRT1) of the first bonding electrode (BDE1). The first bridge electrode (BRE1) may extend from the outer surface of the first protrusion (PRT1) and may contact the first reflective electrode (RFE1) that electrically contacts the first contact portion (CTP1). Accordingly, the first bonding electrode (BDE1) may be electrically connected to the first contact portion (CTP1) through the first bridge electrode (BRE1).
[0193] In the embodiments, the planar surface area of the first contact portion (CTP1) may be sufficiently larger than the planar surface area of the first bonding electrode (BDE1), and further, the first bonding electrode (BDE1) may completely overlap a portion of the planar surface of the first contact portion (CTP1). Accordingly, a sufficient space may be secured in which the first bridge electrode (BRE1) may be arranged.
[0194] Referring again to FIGS. 6 to 10, a second-first bridge electrode (BRE2-1) may be further arranged to ensure reliability of the electrical connection between the second-first bonding electrode (BDE2-1) and the second-first contact portion (CTP2-1).
[0195] In one embodiment, the second-first bonding electrode (BDE2-1) may be normally electrically connected to the second-first reflective electrode (RFE2-1) which is in electrical contact with the second-first contact portion (CTP2-1). For example, in a process of arranging a light-emitting element (LDa) on a pixel circuit layer (PCL), the second-first bonding electrode (BDE2-1) may be electrically connected to the second-first contact portion (CTP2-1). The second-first bridge electrode (BRE2-1) may be omitted.
[0196] In one embodiment, the second-first bonding electrode (BDE2-1) may not be normally electrically connected to the second-first reflective electrode (RFE2-1) that is in electrical contact with the second-first contact portion (CTP2-1). For example, in a process of arranging a light-emitting element (LDa) on a pixel circuit layer (PCL), the second-first bonding electrode (BDE2-1) may not be electrically connected to the second-first contact portion (CTP2-1). In this case, if a connection failure is sensed through a subsequent light-emitting inspection process or the like, a second-first bridge electrode (BRE2-1) may be arranged to electrically connect the second-first bonding electrode (BDE2-1) and the second-first contact portion (CTP2-1).
[0197] The second-first bridge electrode (BRE2-1) may be arranged along the side surface of the second-first protrusion (PRT2-1) of the second-first bonding electrode (BDE2-1). The second-first bridge electrode (BRE2-1) may extend from the side surface of the second-first protrusion (PRT2-1) and may contact the second-first reflective electrode (RFE2-1) which electrically contacts the second-first contact portion (CTP2-1). Accordingly, the second-first bonding electrode (BDE2-1) may be electrically connected to the second-first contact portion (CTP2-1) via the second-first bridge electrode (BRE2-1).
[0198] In the embodiments, the planar surface area of the second-first contact portion (CTP2-1) may be sufficiently larger than the planar surface area of the second-first bonding electrode (BDE2-1), and further, the second-first bonding electrode (BDE2-1) may completely overlap a portion of the second-first contact portion (CTP2-1) on the planar surface. Accordingly, a sufficient space may be secured in which the second-first bridge electrode (BRE2-1) may be arranged.
[0199] Referring again to FIGS. 6 to 10, a second-second bridge electrode (BRE2-2) may be further arranged to ensure reliability of the electrical connection between the second-second bonding electrode (BDE2-2) and the second-second contact portion (CTP2-2).
[0200] In one embodiment, the second-second bonding electrode (BDE2-2) may be normally electrically connected to the second-second reflective electrode (RFE2-2) which is in electrical contact with the second-second contact portion (CTP2-2). For example, in a process of arranging a light-emitting element (LDa) on a pixel circuit layer (PCL), the second-second bonding electrode (BDE2-2) may be electrically connected to the second-second contact portion (CTP2-2). The second-second bridge electrode (BRE2-2) may be omitted.
[0201] In one embodiment, the second-second bonding electrode (BDE2-2) may not be normally electrically connected to the second-second reflective electrode (RFE2-2) that is in electrical contact with the second-second contact portion (CTP2-2). For example, in a process of arranging a light-emitting element (LDa) on a pixel circuit layer (PCL), the second-second bonding electrode (BDE2-2) may not be electrically connected to the second-second contact portion (CTP2-2). In this case, if a connection failure is sensed through a subsequent light-emitting inspection process or the like, a second-second bridge electrode (BRE2-2) may be arranged to electrically connect the second-second bonding electrode (BDE2-2) and the second-second contact portion (CTP2-2).
[0202] The second-second bridge electrode (BRE2-2) may be arranged along the side surface of the second-second protrusion (PRT2-2) of the second-second bonding electrode (BDE2-2). The second-second bridge electrode (BRE2-2) may extend from the side surface of the second-second protrusion (PRT2-2) and may contact the second-second reflective electrode (RFE2-2) which electrically contacts the second-second contact portion (CTP2-2). Accordingly, the second-second bonding electrode (BDE2-2) may be electrically connected to the second-second contact portion (CTP2-2) via the second-second bridge electrode (BRE2-2).
[0203] In the embodiments, the planar surface area of the second-second contact portion (CTP2-2) may be sufficiently larger than the planar surface area of the second-second bonding electrode (BDE2-2), and further, the second-second bonding electrode (BDE2-2) may completely overlap a portion of the second-second contact portion (CTP2-2) on the planar surface. Accordingly, a sufficient space may be secured in which the second-second bridge electrode (BRE2-2) may be arranged.
[0204] As described above with reference to FIGS. 6 to 11, the light emitting element (LDa) of the present disclosure may have a relatively small distance between bonding electrodes connected to different semiconductor layers, and thus may have excellent light emitting efficiency. Even if a connection failure occurs in the process of arranging the light emitting element (LDa) on the pixel circuit layer (PCL), the above-described connection failure can be easily repaired using the bridge electrodes (BRE1, BRE2-1, BRE2-2) without the need for a removal process for removing the light emitting element (LDa).
[0205] FIGS. 12 to 14 are schematic drawings for explaining a light-emitting element according to a second embodiment of the present disclosure. FIG. 12 is a plan view for explaining a light-emitting element according to a second embodiment of the present disclosure, FIG. 13 is a schematic cross-sectional view taken along line X2-X2' of FIG. 12, and FIG. 14 is a schematic cross-sectional view taken along line Y2-Y2' of FIG. 12.
[0206] Referring to FIGS. 12 to 14, the light-emitting element (LDa') may include a light-emitting layer (EST), a first bonding electrode (BDE1), and a second bonding electrode (BDE2).
[0207] The light-emitting stack (EST) can be described substantially the same as (or similar to) what has been described with reference to FIGS. 6 to 8. The light-emitting stack (EST) can include a first semiconductor layer (11), a second semiconductor layer (12) disposed on the first semiconductor layer (11), and an active layer (13) disposed between the first semiconductor layer (11) and the second semiconductor layer (12). In embodiments, the light-emitting stack (EST) may further include an auxiliary layer (14) disposed on the second semiconductor layer (12). Hereinafter, redundant descriptions may be omitted.
[0208] The first bonding electrode (BDE1) may include a first-first bonding electrode (BDE1-1) and a first-second bonding electrode (BDE1-2). The first-first bonding electrode (BDE1-1) may be electrically connected to a lower surface of the first semiconductor layer (11). The first-second bonding electrode (BDE1-2) may be electrically connected to a lower surface of the first semiconductor layer (11). The first-second bonding electrode (BDE1-2) may be spaced apart from the first-first bonding electrode (BDE1-1) in a second direction (DR2). Each of the first-first bonding electrode (BDE1-1) and the first-second bonding electrode (BDE1-2) may not be in physical contact with the second semiconductor layer (12) and the active layer (13). In the embodiments, the first-first bonding electrode (BDE1-1) and the first-second bonding electrode (BDE1-2) may include a eutectic metal.
[0209] The first bonding electrode (BDE1) may be electrically connected to the anode electrode (AE in FIG. 2). For example, each of the first-first bonding electrode (BDE1-1) and the first-second bonding electrode (BDE1-2) may be electrically connected to the anode electrode (AE), or may be electrically connected to at least one electrode (or conductive layer) that contacts the anode electrode (AE).
[0210] The second bonding electrode (BDE2) may be described substantially the same as (or similar to) that described with reference to FIGS. 6 to 8. The second bonding electrode (BDE2) may include a second-first bonding electrode (BDE2-1) and a second-second bonding electrode (BDE2-2). The second-first bonding electrode (BDE2-1) may be electrically connected to the first exposed surface (ES1), and the second-second bonding electrode (BDE2-2) may be electrically connected to the second exposed surface (ES2). The second-first bonding electrode (BDE2-1) and the second-second bonding electrode (BDE2-2) may be electrically connected to a cathode electrode (CE of FIG. 2). The second-first bonding electrode (BDE2-1) and the second-second bonding electrode (BDE2-2) may not be in physical contact with the first-first bonding electrode (BDE1-1) and the first-second bonding electrode (BDE1-2). In embodiments, the second-first bonding electrode (BDE2-1) and the second-second bonding electrode (BDE2-2) may include a eutectic metal. Hereinafter, redundant descriptions may be omitted.
[0211] The first-first bonding electrode (BDE1-1) and the first-second bonding electrode (BDE1-2) may be disposed between the second-first bonding electrode (BDE2-1) and the second-second bonding electrode (BDE2-2). Accordingly, the separation distance between the first-first bonding electrode (BDE1-1) and the second-first bonding electrode (BDE2-1) and the separation distance between the first-second bonding electrode (BDE1-2) and the second-second bonding electrode (BDE2-2) may be relatively reduced. Accordingly, the current distribution within the light-emitting element (LDa') may become more uniform, so that the light-emitting efficiency of the light-emitting element (LDa') may be improved.
[0212] In one embodiment, the first bonding electrode (BDE1) may include a first protrusion that protrudes in at least one direction among the first direction (DR1) and the direction opposite to the first direction (DR1) so as to non-overlap with the planar light-emitting stack (EST). For example, the 1-1 bonding electrode (BDE1-1) and the 1-2 bonding electrode (BDE1-2) may include a 1-1 protrusion (PRT1-1) and a 1-2 protrusion (PRT1-2), respectively, that protrude in at least one direction among the first direction (DR1) and the direction opposite to the first direction (DR1) so as to non-overlap with the planar light-emitting stack (EST).
[0213] Each of the first-first protrusion (PRT1-1) of the first-first bonding electrode (BDE1-1) and the first-second protrusion (PRT1-2) of the first-second bonding electrode (BDE1-2) can serve to secure a connection path between the first bonding electrode (BDE1) and the anode electrode (AE) when a connection failure occurs with the anode electrode (AE). This will be described in detail later with reference to FIG. 17.
[0214] In one embodiment, the light emitting element (LDa') may further include an insulating film (15) surrounding at least a portion of the outer surface of the light emitting stack (EST). The insulating film (15) may be described substantially the same as (or similar to) that described with reference to FIGS. 6 to 8. For example, the insulating film (15) may entirely surround the outer surface of the light emitting stack (EST) except for the region where the light emitting stack (EST) and the first and second bonding electrodes (BDE1, BDE2) are electrically connected. Hereinafter, redundant descriptions are omitted.
[0215] In one embodiment, the light emitting element (LDa') may further include a reflective layer (16) surrounding at least a portion of a side surface of the light emitting stack (EST). The reflective layer (16) may be described substantially the same as (or similar to) that described with reference to FIGS. 6 to 8. For example, the reflective layer (16) may surround a portion of a side surface of the auxiliary layer (14) and a side surface of the second semiconductor layer (12) above the second bonding electrode (BDE2). Hereinafter, redundant descriptions are omitted.
[0216] FIGS. 15 to 17 are schematic drawings for explaining a sub-pixel including a light-emitting element according to a second embodiment of the present disclosure. FIG. 15 is a plan view for explaining a sub-pixel including a light-emitting element according to a second embodiment of the present disclosure, FIG. 16 is a schematic cross-sectional view taken along line I2-I2' of FIG. 15, and FIG. 17 is a schematic cross-sectional view taken along line J2-J2' of FIG. 15.
[0217] Referring to FIG. 15, a sub-pixel (SPa') may be provided. The sub-pixel (SPa') may be any one of the first to third sub-pixels (SP1, SP2, SP3) described with reference to FIG. 3.
[0218] The sub-pixel (SPa') may include an anode electrode (AE) and a cathode electrode (CE). The anode electrode (AE) may be electrically connected to a sub-pixel circuit (SPC of FIG. 2) of the sub-pixel (SPa'). The cathode electrode (CE) may be spaced apart from the anode electrode (AE). The cathode electrode (CE) may be arranged at the same height as the anode electrode (AE). The anode electrode (AE) and the cathode electrode (CE) may define an electrode layer, and the anode electrode (AE) and the cathode electrode (CE) may be implemented as patterns of the electrode layer. In embodiments, the cathode electrode (CE) may extend in a first direction (DR1) and may be used as a common electrode for the pixel (PXL) and other pixels adjacent to the pixel (PXL). The cathode electrode (CE) extends in the second direction (DR2) and can be used as a common electrode for all of the sub-pixels (SP) illustrated in FIG. 3.
[0219] The anode electrode (AE) may include a first-first contact portion (CTP1-1) and a first-second contact portion (CTP1-2). The first-first contact portion (CTP1-1) and the first-second contact portion (CTP1-2) may be electrically connected to each other. The cathode electrode (CE) may include a second-first contact portion (CTP2-1) and a second-second contact portion (CTP2-2). The second-first contact portion (CTP2-1) and the second-second contact portion (CTP2-2) may be electrically connected to each other.
[0220] The light-emitting element (LDa') described with reference to FIGS. 12 to 14 may be disposed on the anode electrode (AE) and the cathode electrode (CE). The first-first bonding electrode (BDE1-1) of the light-emitting element (LDa') may be disposed on the first-first contact portion (CTP1-1) of the anode electrode (AE). The first-second bonding electrode (BDE1-2) of the light-emitting element (LDa') may be disposed on the first-second contact portion (CTP1-2) of the anode electrode (AE). The second-first bonding electrode (BDE2-1) of the light-emitting element (LDa') may be disposed on the second-first contact portion (CTP2-1) of the cathode electrode (CE). The second-second bonding electrode (BDE2-2) of the light-emitting element (LDa') can be placed on the second-second contact portion (CTP2-2) of the cathode electrode (CE).
[0221] The light-emitting element (LDa') can be electrically connected to the anode electrode (AE) and the cathode electrode (CE). The first-first bonding electrode (BDE1-1) and the first-second bonding electrode (BDE1-2) of the light-emitting element (LDa') can be electrically connected to the anode electrode (AE). The second-first bonding electrode (BDE2-1) and the second-second bonding electrode (BDE2-2) of the light-emitting element (LDa') can be electrically connected to the cathode electrode (CE).
[0222] Referring to FIGS. 15 to 17, a pixel circuit layer (PCL), a display element layer (DPL), and a light function layer (LFL) can be sequentially arranged on a substrate (SUB).
[0223] The pixel circuit layer (PCL) can be described substantially the same as (or similar to) that described with reference to FIGS. 9 to 11. Therefore, redundant descriptions are omitted.
[0224] A display element layer (DPL) may be disposed on a second passivation layer (PSV2). The display element layer (DPL) may include an anode electrode (AE), a cathode electrode (CE), a first bank (BNK1), a first-first reflective electrode (RFE1-1), a first-second reflective electrode (RFE1-2), a second-first reflective electrode (REF2-1), a second-second reflective electrode (RFE2-2), a light-emitting element (LDa'), an overcoat layer (OCL), a third passivation layer (PSV3), and a capping layer (CPL).
[0225] An electrode layer including an anode electrode (AE) and a cathode electrode (CE) may be disposed on a pixel circuit layer (PCL). The anode electrode (AE) may include a first-first contact portion (CTP1-1) and a first-second contact portion (CTP1-2), and the cathode electrode (CE) may include a second-first contact portion (CTP2-1) and a second-second contact portion (CTP2-2).
[0226] The anode electrode (AE) can be electrically connected to the connection electrode (CP) through a contact hole (CNTH) penetrating the second passivation layer (PSV2). In this way, the anode electrode (AE) can be electrically connected to the transistor (T_SP).
[0227] The first-second contact portion (CTP1-2) can be spaced apart from the first-first contact portion (CTP1-1) in the second direction (DR2). Since the anode electrode (AE) can be electrically connected to the transistor (T_SP), the first-first contact portion (CTP1-1) and the first-second contact portion (CTP1-2) can be electrically connected to the transistor (T_SP).
[0228] The second-first contact portion (CTP2-1) can be spaced apart from the first-first contact portion (CTP1-1) in a direction opposite to the second direction (DR2). The second-second contact portion (CTP2-2) can be spaced apart from the first-second contact portion (CTP1-2) in the second direction (DR2). The cathode electrode (CE) can be electrically connected to the second power voltage node (VSSN) of FIG. 2. Accordingly, the second power voltage applied to the second power voltage node (VSSN) can be transmitted to the second-first contact portion (CTP2-1) and the second-second contact portion (CTP2-2).
[0229] A first bank (BNK1) may be disposed on an anode electrode (AE) and a cathode electrode (CE). The first bank (BNK1) may have a first opening (OP1) exposing portions of the anode electrode (AE) and the cathode electrode (CE). A light-emitting element (LDa') may be disposed in the first opening (OP1) of the first bank (BNK1). In this way, the first bank (BNK1) may be provided as a pixel defining film that defines an area where the light-emitting element (LDa') is positioned.
[0230] The first bank (BNK1) is configured to include a light-blocking material and may serve to prevent light mixing between adjacent sub-pixels. In embodiments, the first bank (BNK1) may include an organic material. For example, the first bank (BNK1) may include an organic insulating material such as an acrylic resin, an epoxy resin, a phenol resin, a polyamide resin, a polyimide resin, or a combination thereof.
[0231] A first-first reflective electrode (RFE1-1) may be disposed on an exposed portion of a first-first contact portion (CTP1-1) and a side surface of a first bank (BNK1) adjacent thereto. A first-second reflective electrode (RFE1-2) may be disposed on an exposed portion of a first-second contact portion (CTP1-2) and a side surface of a first bank (BNK1) adjacent thereto. A second-first reflective electrode (RFE2-1) may be disposed on an exposed portion of a second-first contact portion (CTP2-1) and a side surface of a first bank (BNK1) adjacent thereto. A second-second reflective electrode (RFE2-2) may be disposed on an exposed portion of a second-second contact portion (CTP2-2) and a side surface of a first bank (BNK1) adjacent thereto. The first-first reflective electrode (RFE1-1), the first-second reflective electrode (RFE1-2), the second-first reflective electrode (RFE2-1), and the second-second reflective electrode (RFE2-2) may include conductive materials suitable for reflecting light. Accordingly, the light-emitting efficiency of the light-emitting element (LDa') may be improved. In embodiments, the first-first reflective electrode (RFE1-1), the first-second reflective electrode (RFE1-2), the second-first reflective electrode (RFE2-1), and the second-second reflective electrode (RFE2-2) may include at least one of aluminum (Al), silver (Ag), magnesium (Mg), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), titanium (Ti), and an alloy of two or more materials selected therefrom. However, the embodiments are not limited thereto.
[0232] The light-emitting element (LDa') can be electrically connected to the first-first contact portion (CTP1-1) of the anode electrode (AE) via the first-first reflective electrode (RFE1-1). For example, the first-first bonding electrode (BDE1-1) of the light-emitting element (LDa') can be electrically connected to the first-first reflective electrode (RFE1-1), and thus, the first-first bonding electrode (BDE1-1) can be electrically connected to the first-first contact portion (CTP1-1) of the anode electrode (AE) via the first-first reflective electrode (RFE1-1).
[0233] The light-emitting element (LDa') can be electrically connected to the first-second contact portion (CTP1-2) of the anode electrode (AE) via the first-second reflective electrode (RFE1-2). For example, the first-second bonding electrode (BDE1-2) of the light-emitting element (LDa') can be electrically connected to the first-second reflective electrode (RFE1-2), and thus, the first-second bonding electrode (BDE1-2) can be electrically connected to the first-second contact portion (CTP1-2) of the anode electrode (AE) via the first-second reflective electrode (RFE1-2).
[0234] The light-emitting element (LDa') can be electrically connected to the second-first contact portion (CTP2-1) of the cathode electrode (CE) via the second-first reflective electrode (RFE2-1). For example, the second-first bonding electrode (BDE2-1) of the light-emitting element (LDa') can be electrically connected to the second-first reflective electrode (RFE2-1), and thus, the second-first bonding electrode (BDE2-1) can be electrically connected to the second-first contact portion (CTP2-1) of the cathode electrode (CE) via the second-first reflective electrode (RFE2-1).
[0235] The light-emitting element (LDa') can be electrically connected to the second-second contact portion (CTP2-2) of the cathode electrode (CE) via the second-second reflective electrode (RFE2-2). For example, the second-second bonding electrode (BDE2-2) of the light-emitting element (LDa') is electrically connected to the second-second reflective electrode (RFE2-2), and thus, the second-second bonding electrode (BDE2-2) can be electrically connected to the second-second contact portion (CTP2-2) of the cathode electrode (CE) via the second-second reflective electrode (RFE2-2).
[0236] An overcoat layer (OCL) may be disposed within a first opening (OP1) in which a first-first reflective electrode (RFE1-1), a first-second reflective electrode (RFE1-2), a second-first reflective electrode (RFE2-1), a second-second reflective electrode (RFE2-2), and a light-emitting element (LDa') are disposed. The overcoat layer (OCL) may fix the light-emitting element (LDa') electrically connected to the first-first reflective electrode (RFE1-1), the first-second reflective electrode (RFE1-2), the second-first reflective electrode (RFE2-1), and the second-second reflective electrode (RFE2-2) so as not to move. The overcoat layer (OCL) may protect components disposed below the overcoat layer (OCL) from foreign substances such as dust and moisture. For example, the overcoat layer (OCL) may include at least one of an inorganic insulating layer and an organic insulating layer. For example, the overcoat layer (OCL) may include epoxy, but embodiments are not limited thereto.
[0237] A third passivation layer (PSV3) may be disposed on the first bank (BNK1) and the overcoat layer (OCL). A capping layer (CPL) may be disposed on the third passivation layer (PSV3). The third passivation layer (PSV3) and the capping layer (CPL) may be described substantially the same as (or similar to) those described with reference to FIGS. 9 to 11. Therefore, redundant descriptions are omitted.
[0238] A light functional layer (LFL) may be disposed on a capping layer (CPL). The light functional layer (LFL) may include a second bank (BNK2), a light reflecting layer (RFL), a fourth passivation layer (PSV4), a light functional pattern (CCP), a low-refractive layer (LRL), and a color filter layer (CFL). The light functional layer (LFL) may be described substantially the same as (or similar to) that described with reference to FIGS. 9 to 11. Therefore, redundant descriptions are omitted.
[0239] Referring again to FIGS. 12 to 15 and 17, a 1-1 bridge electrode (BRE1-1) may be further disposed to ensure reliability of the electrical connection between the 1-1 bonding electrode (BDE1-1) and the 1-1 contact portion (CTP1-1).
[0240] In one embodiment, the first-first bonding electrode (BDE1-1) may be normally electrically connected to the first-first reflective electrode (RFE1-1) which is in electrical contact with the first-first contact portion (CTP1-1). For example, in a process of arranging a light-emitting element (LDa') on a pixel circuit layer (PCL), the first-first bonding electrode (BDE1-1) may be electrically connected to the first-first contact portion (CTP1-1). The first-first bridge electrode (BRE1-1) may be omitted.
[0241] In another embodiment, the first-first bonding electrode (BDE1-1) may not be normally electrically connected to the first-first reflective electrode (RFE1-1) that is in electrical contact with the first-first contact portion (CTP1-1). For example, in a process of arranging a light-emitting element (LDa') on a pixel circuit layer (PCL), the first-first bonding electrode (BDE1-1) may not be electrically connected to the first-first contact portion (CTP1-1). In this case, if a connection failure is sensed through a subsequent light-emitting inspection process or the like, a first-first bridge electrode (BRE1-1) may be arranged to electrically connect the first-first bonding electrode (BDE1-1) and the first-first contact portion (CTP1-1).
[0242] The first-first bridge electrode (BRE1-1) may be arranged along the outer surface of the first protrusion (PRT1) of the first-first bonding electrode (BDE1-1). The first-first bridge electrode (BRE1-1) may extend from the outer surface of the first protrusion (PRT1) and may contact the first-first reflective electrode (RFE1-1) which electrically contacts the first-first contact portion (CTP1-1). Accordingly, the first-first bonding electrode (BDE1-1) may be electrically connected to the first-first contact portion (CTP1-1) through the first-first bridge electrode (BRE1-1).
[0243] In the embodiments, the planar surface area of the first-first contact portion (CTP1-1) may be sufficiently larger than the planar surface area of the first-first bonding electrode (BDE1-1), and further, the first-first bonding electrode (BDE1-1) may completely overlap a portion of the first-first contact portion (CTP1-1) on the planar surface. Accordingly, a sufficient space may be secured in which the first-first bridge electrode (BRE1-1) may be arranged.
[0244] Although the first-first bonding electrode (BDE1-1) and the first-first bridge electrode (BRE1-1) are illustrated in FIG. 17, the above-described contents may be substantially identically (or similarly) applied to the first-second bonding electrode (BDE1-2). For example, in order to ensure the reliability of the electrical connection between the first-second bonding electrode (BDE1-2) and the first-second contact portion (CTP1-2), a first-second bridge electrode (not shown) may be further arranged.
[0245] Referring again to FIGS. 12 to 16, in order to secure the reliability of the electrical connection between the 2-1 bonding electrode (BDE2-1) and the 2-1 contact portion (CTP2-1), a 2-1 bridge electrode (BRE2-1) may be further disposed. In order to secure the reliability of the electrical connection between the 2-2 bonding electrode (BDE2-2) and the 2-2 contact portion (CTP2-2), a 2-2 bridge electrode (BRE2-2) may be further disposed. Here, the 2-1 bridge electrode (BRE2-1) and the 2-2 bridge electrode (BRE2-2) may be described substantially the same as (or similar to) what has been described with reference to FIGS. 6 to 10. Therefore, redundant descriptions are omitted.
[0246] As described above with reference to FIGS. 12 to 17, the light emitting element (LDa') of the present disclosure may have a relatively small distance between bonding electrodes electrically connected to different semiconductor layers, and thus may have excellent light emitting efficiency. Even if a connection failure occurs in the process of arranging the light emitting element (LDa') on the pixel circuit layer (PCL), the above-described connection failure can be easily repaired using the bridge electrodes (BRE1-1, BRE2-1, BRE2-2, and the 1-2nd bridge electrode not shown) without the need for a removal process for removing the light emitting element (LDa').
[0247] FIGS. 18 to 20 are schematic drawings for explaining a light-emitting element according to a third embodiment of the present disclosure. FIG. 18 is a plan view for explaining a light-emitting element according to a third embodiment of the present disclosure, FIG. 19 is a schematic cross-sectional view taken along line X3-X3' of FIG. 18, and FIG. 20 is a schematic cross-sectional view taken along line Y3-Y3' of FIG. 18.
[0248] Referring to FIGS. 18 to 20, the light emitting element (LDb) may include a light emitting layer (EST), a first bonding electrode (BDE1), and a second bonding electrode (BDE2).
[0249] The light-emitting stack (EST) can be described substantially the same as (or similar to) that described with reference to FIGS. 6 to 8. The light-emitting stack (EST) can include a first semiconductor layer (11), a second semiconductor layer (12) disposed on the first semiconductor layer (11), and an active layer (13) disposed between the first semiconductor layer (11) and the second semiconductor layer (12). In embodiments, the light-emitting stack (EST) may further include an auxiliary layer (14) disposed on the second semiconductor layer (12). Hereinafter, redundant descriptions are omitted.
[0250] The first bonding electrode (BDE1) may include a first-first bonding electrode (BDE1-1) and a first-second bonding electrode (BDE1-2). The first-first bonding electrode (BDE1-1) may be electrically connected to a lower surface of the first semiconductor layer (11). The first-second bonding electrode (BDE1-2) may be electrically connected to a lower surface of the first semiconductor layer (11). The first-second bonding electrode (BDE1-2) may be spaced apart from the first-first bonding electrode (BDE1-1) in a second direction (DR2). For example, the first-first bonding electrode (BDE1-1) may be adjacent to one side surface of the first semiconductor layer (11), and the first-second bonding electrode (BDE1-2) may be adjacent to the other side surface of the first semiconductor layer (11) opposite to the one side surface in the second direction (DR2). Each of the first-first bonding electrode (BDE1-1) and the first-second bonding electrode (BDE1-2) may not be in physical contact with the second semiconductor layer (12) and the active layer (13). In embodiments, the first-first bonding electrode (BDE1-1) and the first-second bonding electrode (BDE1-2) may include a eutectic metal.
[0251] The first bonding electrode (BDE1) may be electrically connected to the anode electrode (AE in FIG. 2). For example, each of the first-first bonding electrode (BDE1-1) and the first-second bonding electrode (BDE1-2) may be electrically connected to the anode electrode (AE), or may be electrically connected to at least one electrode (or conductive layer) that contacts the anode electrode (AE).
[0252] The second bonding electrode (BDE2) may be electrically connected to the second semiconductor layer (12). The second bonding electrode (BDE2) may not be in physical contact with the first semiconductor layer (11), the active layer (13), the first-first bonding electrode (BDE1-1), and the first-second bonding electrode (BDE1-2). In embodiments, the second bonding electrode (BDE2) may include a eutectic metal.
[0253] The second bonding electrode (BDE2) may be electrically connected to the cathode electrode (CE in FIG. 2). For example, the second bonding electrode (BDE2) may be electrically connected to the cathode electrode (CE), or may be electrically connected to at least one electrode (or conductive layer) that contacts the cathode electrode (CE).
[0254] The second bonding electrode (BDE2) may be positioned between the first-first bonding electrode (BDE1-1) and the first-second bonding electrode (BDE1-2). Accordingly, the separation distance between the first-first bonding electrode (BDE1-1) and the second bonding electrode (BDE2) and the separation distance between the first-second bonding electrode (BDE1-2) and the second bonding electrode (BDE2) may be relatively reduced. Accordingly, the luminous efficiency of the light-emitting element (LDb) may be improved.
[0255] In one embodiment, an exposed surface (ES) that does not overlap the first semiconductor layer (11) and the active layer (13) in a planar manner may be defined on an opposite surface of the second semiconductor layer (12) facing the outer surface of the active layer (13). For example, the exposed surface (ES) may be a surface where the second semiconductor layer (12) is exposed by removing a portion of the first semiconductor layer (11) and the active layer (13). The exposed surface (ES) may be located between the first-first bonding electrode (BDE1-1) and the first-second bonding electrode (BDE1-2) in a planar manner. The second bonding electrode (BDE2) may be electrically connected to the exposed surface (ES).
[0256] In one embodiment, the second bonding electrode (BDE2) may include a second protrusion (PRT2) that protrudes in at least one of the first direction (DR1) and the direction opposite to the first direction (DR1) so as not to overlap with the light-emitting stack (EST) on a planar surface. For example, as illustrated in FIG. 18, the second bonding electrode (BDE2) may include a second protrusion (PRT2) that protrudes in the first direction (DR1) and the direction opposite to the first direction (DR1) relative to the light-emitting stack (EST). However, embodiments of the second protrusion (PRT2) are not limited to those illustrated in FIG. 18. For example, the second bonding electrode (BDE2) may include a second protrusion that protrudes only in the first direction (DR1) relative to the light-emitting stack (EST), or may include a second protrusion that protrudes only in the direction opposite to the first direction (DR1) relative to the light-emitting stack (EST).
[0257] According to embodiments, a connection failure between the second bonding electrode (BDE2) and the cathode electrode (CE) may occur. For example, the second bonding electrode (BDE2) and the cathode electrode (CE) may not be electrically connected to each other due to a foreign substance disposed between the second bonding electrode (BDE2) and the cathode electrode (CE). In the present disclosure, the second protrusion (PRT2) of the second bonding electrode (BDE2) may serve to secure a connection path between the second bonding electrode (BDE2) and the cathode electrode (CE) when a connection failure with the aforementioned cathode electrode (CE) occurs. This will be described in detail later with reference to FIG. 23.
[0258] In one embodiment, the first-first bonding electrode (BDE1-1) may include a first-first protrusion (PRT1-1) that protrudes in a direction opposite to the second direction (DR2) so as not to overlap with the planar light-emitting stack (EST). The first-first protrusion (PRT1-1) of the first-first bonding electrode (BDE1-1) may serve to secure a connection path between the first-first bonding electrode (BDE1-1) and the anode electrode (AE) when a connection failure occurs with the anode electrode (AE of FIG. 2). For example, in a case where the first-first bonding electrode (BDE1-1) and the anode electrode (AE) are not electrically connected to each other due to a foreign substance disposed between the first-first bonding electrode (BDE1-1) and the anode electrode (AE), a connection path between the first-first bonding electrode (BDE1-1) and the anode electrode (AE) can be secured through the first-first protrusion (PRT1-1). This will be described in detail later with reference to FIG. 22.
[0259] In one embodiment, the first-second bonding electrode (BDE1-2) may include a first-second protrusion (PRT1-2) that protrudes in the second direction (DR2) so as not to overlap with the planar light-emitting stack (EST). The first-second protrusion (PRT1-2) of the first-second bonding electrode (BDE1-2) may serve to secure a connection path between the first-second bonding electrode (BDE1-2) and the anode electrode (AE) when a connection failure occurs with the anode electrode (AE). This will be described in detail later with reference to FIG. 22.
[0260] In one embodiment, the light emitting element (LDb) may further include an insulating film (15) surrounding at least a portion of the outer surface of the light emitting stack (EST). For example, the insulating film (15) may entirely surround the outer surface of the light emitting stack (EST) except for a region where the light emitting stack (EST) and the first and second bonding electrodes (BDE1, BDE2) are electrically connected.
[0261] The insulating film (15) can serve to prevent an electrical short circuit that may occur when the active layer (13) comes into contact with a conductive material other than the first and second semiconductor layers (11, 12). The insulating film (15) is disposed between the second bonding electrode (BDE2) and the first semiconductor layer (11), and between the second bonding electrode (BDE2) and the active layer (13), so as to prevent an electrical short circuit that may occur when the second bonding electrode (BDE2) comes into contact with the first semiconductor layer (11) and the active layer (13). The insulating film (15) can include a transparent insulating material. Some of the first and second bonding electrodes (BDE1, BDE2) may be exposed without being covered by the insulating film (15).
[0262] Even when the light emitting element (LDb) further includes an insulating film (15), each of the first-first protrusion (PRT1-1) of the first-first bonding electrode (BDE1-1), the first-second protrusion (PRT1-2) of the first-second bonding electrode (BDE1-2), and the second protrusion (PRT2) of the second bonding electrode (BDE2) may protrude further than the insulating film (15) on the plane.
[0263] In one embodiment, the light emitting element (LDb) may further include a reflective layer (16) surrounding at least a portion of a side surface of the light emitting stack (EST). For example, the reflective layer (16) may surround a side surface of the auxiliary layer (14) and a portion of a side surface of the second semiconductor layer (12) above the second bonding electrode (BDE2).
[0264] The reflective layer (16) can play a role in improving the front emission efficiency of light generated from the active layer (13). For example, an insulating film (15) can be disposed between the reflective layer (16) and the light-emitting stack (EST), and in this case, the reflective layer (16) can include an insulating material having a different refractive index from that of the insulating film (15). Accordingly, total reflection of light can be induced at the interface between the reflective layer (16) and the insulating film (15), so that the light generated from the active layer (13) can travel in the front direction of the display panel (DP of FIG. 3) (e.g., the third direction (DR3) and a direction crossing therewith). For example, the reflective layer (16) can include a material suitable for reflecting incident light. For example, the reflective layer (16) may include at least one of aluminum (Al), silver (Ag), magnesium (Mg), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), titanium (Ti), and an alloy of two or more materials selected from these.
[0265] In one embodiment, the reflective layer (16) may be in contact with the second bonding electrode (BDE2). For example, as illustrated in FIG. 20, the reflective layer (16) may be in contact with the second protrusion (PRT2 of FIG. 18) of the second bonding electrode (BDE2). The reflective layer (16) may be configured to include a conductive material.
[0266] In the above-described embodiment, the reflective layer (16) may be spaced apart from the first-first bonding electrode (BDE1-1) and the first-second bonding electrode (BDE1-2). For example, when the reflective layer (16) is in electrical contact with the second bonding electrode (BDE2), the first-first bonding electrode (BDE1-1) and the first-second bonding electrode (BDE1-2) may be spaced apart from the reflective layer (16). Accordingly, an electrical short circuit may not occur in which the first-first bonding electrode (BDE1-1) and the first-second bonding electrode (BDE1-2) are electrically connected to the second bonding electrode (BDE2) through the reflective layer (16).
[0267] Even when the light emitting element (LDb) further includes a reflective layer (16), each of the first protrusion (PRT1-1) of the first-first bonding electrode (BDE1-1), the first-second protrusion (PRT1-2) of the first-second bonding electrode (BDE1-2), and the second protrusion (PRT2) of the second bonding electrode (BDE2) may protrude further than the planar reflective layer (16).
[0268] FIGS. 21 to 23 are schematic drawings for explaining a sub-pixel including a light-emitting element according to a third embodiment of the present disclosure. FIG. 21 is a plan view for explaining a sub-pixel including a light-emitting element according to a third embodiment of the present disclosure, FIG. 22 is a schematic cross-sectional view taken along line I3-I3' of FIG. 21, and FIG. 23 is a schematic cross-sectional view taken along line J3-J3' of FIG. 21.
[0269] Referring to FIG. 21, a sub-pixel (SPb) may be provided. The sub-pixel (SPb) may be any one of the first to third sub-pixels (SP1, SP2, SP3) described with reference to FIG. 3.
[0270] The sub-pixel (SPb) may include an anode electrode (AE) and a cathode electrode (CE). The anode electrode (AE) may be electrically connected to a sub-pixel circuit (SPC of FIG. 2) of the sub-pixel (SPb). The cathode electrode (CE) may be spaced apart from the anode electrode (AE). The cathode electrode (CE) may be arranged at the same height as the anode electrode (AE). The anode electrode (AE) and the cathode electrode (CE) may define an electrode layer, and the anode electrode (AE) and the cathode electrode (CE) may be implemented as patterns of the electrode layer. In embodiments, the cathode electrode (CE) may extend in a second direction (DR2) and may be used as a common electrode for the pixel (PXL) and other pixels adjacent to the pixel (PXL). The cathode electrode (CE) may extend in the first direction (DR1) in another area not shown in FIG. 21 and be used as a common electrode for all of the sub-pixels (SP) shown in FIG. 3.
[0271] The anode electrode (AE) may include a first-first contact portion (CTP1-1) and a first-second contact portion (CTP1-2). The first-first contact portion (CTP1-1) and the first-second contact portion (CTP1-2) may be electrically connected to each other. The cathode electrode (CE) may include a second contact portion (CTP2).
[0272] The light-emitting element (LDb) described with reference to FIGS. 18 to 20 may be disposed on the anode electrode (AE) and the cathode electrode (CE). The first-first bonding electrode (BDE1-1) of the light-emitting element (LDb) may be disposed on the first-first contact portion (CTP1-1) of the anode electrode (AE). The first-second bonding electrode (BDE1-2) of the light-emitting element (LDb) may be disposed on the first-second contact portion (CTP1-2) of the anode electrode (AE). The second bonding electrode (BDE2) of the light-emitting element (LDb) may be disposed on the second contact portion (CTP2) of the cathode electrode (CE).
[0273] The light emitting element (LDb) can be electrically connected to the anode electrode (AE) and the cathode electrode (CE). The first-first bonding electrode (BDE1-1) and the first-second bonding electrode (BDE1-2) of the light emitting element (LDb) can be electrically connected to the anode electrode (AE). The second bonding electrode (BDE2) of the light emitting element (LDb) can be electrically connected to the cathode electrode (CE).
[0274] Referring to FIGS. 21 to 23, a pixel circuit layer (PCL), a display element layer (DPL), and a light function layer (LFL) can be sequentially arranged on a substrate (SUB).
[0275] The pixel circuit layer (PCL) can be described substantially the same as (or similar to) that described with reference to FIGS. 9 to 11. Therefore, redundant descriptions are omitted.
[0276] A display element layer (DPL) may be disposed on a second passivation layer (PSV2). The display element layer (DPL) may include an anode electrode (AE), a cathode electrode (CE), a first bank (BNK1), a first-first reflective electrode (RFE1-1), a first-second reflective electrode (RFE1-2), a second reflective electrode (RFE2), a light-emitting element (LDb), an overcoat layer (OCL), a third passivation layer (PSV3), and a capping layer (CPL).
[0277] An electrode layer including an anode electrode (AE) and a cathode electrode (CE) may be disposed on a pixel circuit layer (PCL). The anode electrode (AE) may include a first-first contact portion (CTP1-1) and a first-second contact portion (CTP1-2), and the cathode electrode (CE) may include a second contact portion (CTP2).
[0278] The anode electrode (AE) can be electrically connected to the connection electrode (CP) through a contact hole (not shown) penetrating the second passivation layer (PSV2). In this way, the anode electrode (AE) can be electrically connected to the transistor (T_SP).
[0279] The first-second contact portion (CTP1-2) can be spaced apart from the first-first contact portion (CTP1-1) in the second direction (DR2). Since the anode electrode (AE) can be electrically connected to the transistor (T_SP), the first-first contact portion (CTP1-1) and the first-second contact portion (CTP1-2) can be electrically connected to the transistor (T_SP).
[0280] The second contact portion (CTP2) may be arranged between the first-first contact portion (CTP1-1) and the first-second contact portion (CTP1-2). The second contact portion (CTP2) may be spaced apart from the first-first contact portion (CTP1-1) and the first-second contact portion (CTP1-2). The cathode electrode (CE) may be electrically connected to the second power voltage node (VSSN) of FIG. 2. Accordingly, the second power voltage applied to the second power voltage node (VSSN) may be transmitted to the second contact portion (CTP2).
[0281] A first bank (BNK1) may be disposed on an anode electrode (AE) and a cathode electrode (CE). The first bank (BNK1) may have a first opening (OP1) exposing portions of the anode electrode (AE) and the cathode electrode (CE). A light-emitting element (LDb) may be disposed in the first opening (OP1) of the first bank (BNK1). In this way, the first bank (BNK1) may be provided as a pixel defining film that defines an area where the light-emitting element (LDb) is positioned.
[0282] The first bank (BNK1) is configured to include a light-blocking material and may serve to prevent light mixing between adjacent sub-pixels. In embodiments, the first bank (BNK1) may include an organic material. For example, the first bank (BNK1) may include an organic insulating material such as an acrylic resin, an epoxy resin, a phenol resin, a polyamide resin, or a polyimide resin.
[0283] A first-first reflective electrode (RFE1-1) may be disposed on an exposed portion of a first-first contact portion (CTP1-1) and a side surface of a first bank (BNK1) adjacent thereto. A first-second reflective electrode (RFE1-2) may be disposed on an exposed portion of a first-second contact portion (CTP1-2) and a side surface of a first bank (BNK1) adjacent thereto. A second reflective electrode (RFE2) may be disposed on an exposed portion of a second contact portion (CTP2) and a side surface of a first bank (BNK1) adjacent thereto. The first-first reflective electrode (RFE1-1), the first-second reflective electrode (RFE1-2), and the second reflective electrode (RFE2) may include conductive materials suitable for reflecting light. Accordingly, the light emission efficiency of the light-emitting element (LDb) may be improved. In the embodiments, the first-first reflective electrode (RFE1-1), the first-second reflective electrode (RFE1-2), and the second reflective electrode (RFE2) may include at least one of aluminum (Al), silver (Ag), magnesium (Mg), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), titanium (Ti), and an alloy of two or more materials selected therefrom. However, the embodiments are not limited thereto.
[0284] The light-emitting element (LDb) can be electrically connected to the first-first contact portion (CTP1-1) of the anode electrode (AE) via the first-first reflective electrode (RFE1-1). For example, the first-first bonding electrode (BDE1-1) of the light-emitting element (LDb) can be electrically connected to the first-first reflective electrode (RFE1-1), and thus, the first-first bonding electrode (BDE1-1) can be electrically connected to the first-first contact portion (CTP1-1) of the anode electrode (AE) via the first-first reflective electrode (RFE1-1).
[0285] The light emitting element (LDb) can be electrically connected to the first-second contact portion (CTP1-2) of the anode electrode (AE) via the first-second reflective electrode (RFE1-2). For example, the first-second bonding electrode (BDE1-2) of the light emitting element (LDb) can be electrically connected to the first-second reflective electrode (RFE1-2), and thus, the first-second bonding electrode (BDE1-2) can be electrically connected to the first-second contact portion (CTP1-2) of the anode electrode (AE) via the first-second reflective electrode (RFE1-2).
[0286] The light emitting element (LDb) can be electrically connected to the second contact portion (CTP2) of the cathode electrode (CE) via the second reflective electrode (RFE2). For example, the second bonding electrode (BDE2) of the light emitting element (LDb) can be electrically connected to the second reflective electrode (RFE2), and thus, the second bonding electrode (BDE2) can be electrically connected to the second contact portion (CTP2) of the cathode electrode (CE) via the second reflective electrode (RFE2).
[0287] An overcoat layer (OCL) may be disposed within a first opening (OP1) in which a first-first reflective electrode (RFE1-1), a first-second reflective electrode (RFE1-2), a second reflective electrode (RFE2), and a light-emitting element (LDb) are disposed. The overcoat layer (OCL) may fix the light-emitting element (LDb) electrically connected to the first-first reflective electrode (RFE1-1), the first-second reflective electrode (RFE1-2), and the second reflective electrode (RFE2) so as not to move. The overcoat layer (OCL) may protect components disposed below the overcoat layer (OCL) from foreign substances such as dust, moisture, and the like. For example, the overcoat layer (OCL) may include at least one of an inorganic insulating layer and an organic insulating layer. For example, the overcoat layer (OCL) may include epoxy, but embodiments are not limited thereto.
[0288] A third passivation layer (PSV3) may be disposed on the first bank (BNK1) and the overcoat layer (OCL). A capping layer (CPL) may be disposed on the third passivation layer (PSV3). The third passivation layer (PSV3) and the capping layer (CPL) may be described substantially the same as (or similar to) those described with reference to FIGS. 9 to 11. Therefore, redundant descriptions are omitted.
[0289] A light functional layer (LFL) may be disposed on a capping layer (CPL). The light functional layer (LFL) may include a second bank (BNK2), a light reflecting layer (RFL), a fourth passivation layer (PSV4), a light functional pattern (CCP), a low-refractive layer (LRL), and a color filter layer (CFL). The light functional layer (LFL) may be described substantially the same as (or similar to) that described with reference to FIGS. 9 to 11. Therefore, redundant descriptions are omitted.
[0290] Referring again to FIGS. 18 to 21 and 23, a second bridge electrode (BRE2) may be further disposed to ensure reliability of the electrical connection between the second bonding electrode (BDE2) and the second contact portion (CTP2).
[0291] In one embodiment, the second bonding electrode (BDE2) may be normally electrically connected to the second reflective electrode (RFE2) that is in electrical contact with the second contact portion (CTP2). For example, in a process of arranging a light-emitting element (LDb) on a pixel circuit layer (PCL), the second bonding electrode (BDE2) may be electrically connected to the second contact portion (CTP2). The second bridge electrode (BRE2) may be omitted.
[0292] In one embodiment, the second bonding electrode (BDE2) may not be normally electrically connected to the second reflective electrode (RFE2) that is in electrical contact with the second contact portion (CTP2). For example, in a process of arranging a light-emitting element (LDb) on a pixel circuit layer (PCL), the second bonding electrode (BDE2) may not be electrically connected to the second contact portion (CTP2). In this case, if a connection failure is sensed through a subsequent light-emitting inspection process or the like, a second bridge electrode (BRE2) may be arranged to electrically connect the second bonding electrode (BDE2) and the second contact portion (CTP2).
[0293] The second bridge electrode (BRE2) may be arranged along the side surface of the second protrusion (PRT2) of the second bonding electrode (BDE2). The second bridge electrode (BRE2) may extend from the side surface of the second protrusion (PRT2) and may contact the second reflective electrode (RFE2) that electrically contacts the second contact portion (CTP2). Accordingly, the second bonding electrode (BDE2) may be electrically connected to the second contact portion (CTP2) through the second bridge electrode (BRE2).
[0294] In the embodiments, the planar surface area of the second contact portion (CTP2) may be sufficiently larger than the planar surface area of the second bonding electrode (BDE2), and further, the second bonding electrode (BDE2) may completely overlap a portion of the planar surface of the second contact portion (CTP2). Accordingly, a sufficient space may be secured in which the second bridge electrode (BRE2) may be arranged.
[0295] Referring again to FIGS. 18 to 22, in order to ensure the reliability of the electrical connection between the 1-1 bonding electrode (BDE1-1) and the 1-1 contact portion (CTP1-1), a 1-1 bridge electrode (BRE1-1) may be further arranged.
[0296] In one embodiment, the first-first bonding electrode (BDE1-1) may be normally electrically connected to the first-first reflective electrode (RFE1-1) which is in electrical contact with the first-first contact portion (CTP1-1). For example, in a process of arranging a light-emitting element (LDb) on a pixel circuit layer (PCL), the first-first bonding electrode (BDE1-1) may be electrically connected to the first-first contact portion (CTP1-1). The first-first bridge electrode (BRE1-1) may be omitted.
[0297] In one embodiment, the first-first bonding electrode (BDE1-1) may not be normally electrically connected to the first-first reflective electrode (RFE1-1) that is in electrical contact with the first-first contact portion (CTP1-1). For example, in a process of arranging a light-emitting element (LDb) on a pixel circuit layer (PCL), the first-first bonding electrode (BDE1-1) may not be electrically connected to the first-first contact portion (CTP1-1). If a connection failure is sensed through a subsequent light-emitting inspection process, a first-first bridge electrode (BRE1-1) may be arranged to electrically connect the first-first bonding electrode (BDE1-1) and the first-first contact portion (CTP1-1).
[0298] The first-first bridge electrode (BRE1-1) may be arranged along the outer surface of the first-first protrusion (PRT1-1) of the first-first bonding electrode (BDE1-1). The first-first bridge electrode (BRE1-1) may extend from the outer surface of the first-first protrusion (PRT1-1) and may contact the first-first reflective electrode (RFE1-1) which electrically contacts the first-first contact portion (CTP1-1). Accordingly, the first-first bonding electrode (BDE1-1) may be electrically connected to the first-first contact portion (CTP1-1) through the first-first bridge electrode (BRE1-1).
[0299] In the embodiments, the planar surface area of the first-first contact portion (CTP1-1) may be sufficiently larger than the planar surface area of the first-first bonding electrode (BDE1-1), and further, the first-first bonding electrode (BDE1-1) may completely overlap a portion of the first-first contact portion (CTP1-1) on the planar surface. Accordingly, a sufficient space may be secured in which the first-first bridge electrode (BRE1-1) may be arranged.
[0300] Referring again to FIGS. 18 to 22, a first-second bridge electrode (BRE1-2) may be further arranged to ensure reliability of the electrical connection between the first-second bonding electrode (BDE1-2) and the first-second contact portion (CTP1-2).
[0301] In one embodiment, the first-second bonding electrode (BDE1-2) may be normally electrically connected to the first-second reflective electrode (RFE1-2) which is in electrical contact with the first-second contact portion (CTP1-2). For example, in a process of arranging a light-emitting element (LDb) on a pixel circuit layer (PCL), the first-second bonding electrode (BDE1-2) may be electrically connected to the first-second contact portion (CTP1-2). The first-second bridge electrode (BRE1-2) may be omitted.
[0302] In one embodiment, the first-second bonding electrode (BDE1-2) may not be normally electrically connected to the first-second reflective electrode (RFE1-2) that is in electrical contact with the first-second contact portion (CTP1-2). For example, in a process of arranging a light-emitting element (LDb) on a pixel circuit layer (PCL), the first-second bonding electrode (BDE1-2) may not be electrically connected to the first-second contact portion (CTP1-2). If a connection failure is sensed through a subsequent light-emitting inspection process, a first-second bridge electrode (BRE1-2) may be arranged to electrically connect the first-second bonding electrode (BDE1-2) and the first-second contact portion (CTP1-2).
[0303] The first-second bridge electrode (BRE1-2) may be arranged along the outer surface of the first-second protrusion (PRT1-2) of the first-second bonding electrode (BDE1-2). The first-second bridge electrode (BRE1-2) may extend from the outer surface of the first-second protrusion (PRT1-2) and may contact the first-second reflective electrode (RFE1-2) which electrically contacts the first-second contact portion (CTP1-2). Accordingly, the first-second bonding electrode (BDE1-2) may be electrically connected to the first-second contact portion (CTP1-2) through the first-second bridge electrode (BRE1-2).
[0304] In the embodiments, the planar surface area of the first-second contact portion (CTP1-2) may be sufficiently larger than the planar surface area of the first-second bonding electrode (BDE1-2), and further, the first-second bonding electrode (BDE1-2) may completely overlap a portion of the first-second contact portion (CTP1-2) on the planar surface. Accordingly, a sufficient space may be secured in which the first-second bridge electrode (BRE1-2) may be arranged.
[0305] As described above with reference to FIGS. 18 to 23, the light emitting element (LDb) of the present disclosure may have a relatively small distance between bonding electrodes electrically connected to different semiconductor layers, and thus may have excellent light emitting efficiency. Even if a connection failure occurs in the process of arranging the light emitting element (LDb) on the pixel circuit layer (PCL), the above-described connection failure can be easily repaired using the bridge electrodes (BRE1-1, BRE1-2, BRE2) without the need for a removal process for removing the light emitting element (LDb).
[0306] FIGS. 24 to 26 are schematic drawings for explaining a light-emitting element according to a fourth embodiment of the present disclosure. FIG. 24 is a plan view for explaining a light-emitting element according to a fourth embodiment of the present disclosure, FIG. 25 is a schematic cross-sectional view taken along line X4-X4' of FIG. 24, and FIG. 26 is a schematic cross-sectional view taken along line Y4-Y4' of FIG. 24.
[0307] Referring to FIGS. 24 to 26, the light emitting element (LDb') may include a light emitting layer (EST), a first bonding electrode (BDE1), and a second bonding electrode (BDE2).
[0308] The light-emitting stack (EST) can be described substantially the same as (or similar to) that described with reference to FIGS. 6 to 8. The light-emitting stack (EST) can include a first semiconductor layer (11), a second semiconductor layer (12) disposed on the first semiconductor layer (11), and an active layer (13) disposed between the first semiconductor layer (11) and the second semiconductor layer (12). In embodiments, the light-emitting stack (EST) may further include an auxiliary layer (14) disposed on the second semiconductor layer (12). Hereinafter, redundant descriptions are omitted.
[0309] The first bonding electrode (BDE1) can be described substantially the same as (or similar to) what has been described with reference to FIGS. 18 to 20. The first bonding electrode (BDE1) can include a first-first bonding electrode (BDE1-1) and a first-second bonding electrode (BDE1-2). The first-first bonding electrode (BDE1-1) can be electrically connected to the lower surface of the first semiconductor layer (11). The first-second bonding electrode (BDE1-2) can be electrically connected to the lower surface of the first semiconductor layer (11). The first-second bonding electrode (BDE1-2) can be spaced apart from the first-first bonding electrode (BDE1-1) in the second direction (DR2). The first-first bonding electrode (BDE1-1) and the first-second bonding electrode (BDE1-2) can be electrically connected to an anode electrode (AE of FIG. 2). Each of the first-first bonding electrode (BDE1-1) and the first-second bonding electrode (BDE1-2) may not be in physical contact with the second semiconductor layer (12) and the active layer (13). In embodiments, the first-first bonding electrode (BDE1-1) and the first-second bonding electrode (BDE1-2) may include a eutectic metal. Hereinafter, redundant descriptions are omitted.
[0310] The second bonding electrode (BDE2) may include a second-first bonding electrode (BDE2-1) and a second-second bonding electrode (BDE2-2). The second-first bonding electrode (BDE2-1) may be electrically connected to the second semiconductor layer (12). The second-second bonding electrode (BDE2-2) may be electrically connected to the second semiconductor layer (12). The second-second bonding electrode (BDE2-2) may be spaced apart from the second-first bonding electrode (BDE2-1) in the second direction (DR2). Each of the second-first bonding electrode (BDE2-1) and the second-second bonding electrode (BDE2) may not be in physical contact with the first semiconductor layer (11), the active layer (13), and the first bonding electrode (BDE1). In the embodiments, the second-1 bonding electrode (BDE2-1) and the second-2 bonding electrode (BDE2-2) may include a eutectic metal.
[0311] The second bonding electrode (BDE2) may be electrically connected to the cathode electrode (CE in FIG. 2). For example, each of the second-first bonding electrode (BDE2-1) and the second-second bonding electrode (BDE2-2) may be electrically connected to the cathode electrode (CE), or may be electrically connected to at least one electrode (or conductive layer) that contacts the cathode electrode (CE).
[0312] The second-first bonding electrode (BDE2-1) and the second-second bonding electrode (BDE2-2) may be arranged between the first-first bonding electrode (BDE1-1) and the first-second bonding electrode (BDE1-2). Accordingly, the separation distance between the first-first bonding electrode (BDE1-1) and the second-first bonding electrode (BDE2-1) and the separation distance between the first-second bonding electrode (BDE1-2) and the second-second bonding electrode (BDE2-2) may be relatively reduced. Accordingly, the current distribution within the light-emitting element (LDb') may become more uniform, so that the light-emitting efficiency of the light-emitting element (LDb') may be improved.
[0313] In one embodiment, a first exposed surface (ES1) and a second exposed surface (ES2) that do not overlap the first semiconductor layer (11) and the active layer (13) in a planar manner may be defined on the opposite surface of the second semiconductor layer (12) facing the outer surface of the active layer (13). For example, the first exposed surface (ES1) and the second exposed surface (ES2) may be surfaces where the second semiconductor layer (12) is exposed by removing a portion of the first semiconductor layer (11) and the active layer (13). The first exposed surface (ES1) and the second exposed surface (ES2) may be disposed between the first-first bonding electrode (BDE1-1) and the first-second bonding electrode (BDE1-2) in a planar manner. The second-first bonding electrode (BDE2-1) may be electrically connected to the first exposed surface (ES1), and the second-second bonding electrode (BDE2-2) may be electrically connected to the second exposed surface (ES2).
[0314] In one embodiment, the second-first and second-second bonding electrodes (BDE2-1, BDE2-2) may each include second-first and second-second protrusions (PRT2-1, PRT2-2) that protrude in at least one of the first direction (DR1) and the direction opposite to the first direction (DR1) so as to non-overlap with the planar light-emitting stack (EST). For example, the second-first bonding electrode (BDE2-1) and the second-second bonding electrode (BDE2-2) may each independently include second-first protrusions (PRT2-1) and second-second protrusions (PRT2-2) that protrude in at least one of the first direction (DR1) and the direction opposite to the first direction (DR1) so as to non-overlap with the planar light-emitting stack (EST).
[0315] In this case, the second-first protrusion (PRT2-1) of the second-first bonding electrode (BDE2-1) and the second-second protrusion (PRT2-2) of the second-second bonding electrode (BDE2-2) can play a role in securing a connection path between the second-first bonding electrode (BDE2-1) and the second-second bonding electrode (BDE2-2) and the cathode electrode (CE) when a connection failure occurs with the cathode electrode (CE). This will be described in detail later with reference to FIG. 29.
[0316] In one embodiment, the light emitting element (LDb') may further include an insulating film (15) surrounding at least a portion of the outer surface of the light emitting stack (EST). The insulating film (15) may be described substantially the same as (or similar to) what has been described with reference to FIGS. 18 to 20. For example, the insulating film (15) may surround the entire outer surface of the light emitting stack (EST) except for the region where the light emitting stack (EST) and the first and second bonding electrodes (BDE1, BDE2) are electrically connected. In this case, the insulating film (15) may be disposed between the 2-1 bonding electrode (BDE2-1) and the active layer (13), between the 2-1 bonding electrode (BDE2-1) and the first semiconductor layer (11), between the 2-2 bonding electrode (BDE2-2) and the active layer (13), and between the 2-2 bonding electrode (BDE2-2) and the first semiconductor layer (11). Below, redundant explanations are omitted.
[0317] In one embodiment, the light emitting element (LDb') may further include a reflective layer (16) surrounding at least a portion of a side surface of the light emitting stack (EST). For example, the reflective layer (16) may surround a side surface of the auxiliary layer (14) and a portion of a side surface of the second semiconductor layer (12) above the second bonding electrode (BDE2).
[0318] The reflective layer (16) can play a role in improving the front emission efficiency of light generated from the active layer (13). For example, an insulating film (15) can be disposed between the reflective layer (16) and the light-emitting stack (EST), and the reflective layer (16) can include an insulating material having a different refractive index from the insulating film (15). Accordingly, total reflection of light can be induced at the interface between the reflective layer (16) and the insulating film (15), so that the light generated from the active layer (13) can travel in the front direction of the display panel (DP of FIG. 3) (e.g., the third direction (DR3) and a direction crossing therewith). For example, the reflective layer (16) can include a material suitable for reflecting incident light. For example, the reflective layer (16) may include at least one of aluminum (Al), silver (Ag), magnesium (Mg), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), titanium (Ti), and an alloy of two or more materials selected from these.
[0319] In one embodiment, the reflective layer (16) may be in contact with each of the second-first bonding electrode (BDE2-1) and the second-second bonding electrode (BDE2-2). For example, the reflective layer (16) may be in contact with each of the second protrusion (PRT2) of the second-first bonding electrode (BDE2-1) and the second protrusion (PRT2) of the second-second bonding electrode (BDE2-2). The reflective layer (16) may be configured to include a conductive material. Accordingly, the second-first bonding electrode (BDE2-1) and the second-second bonding electrode (BDE2-2) may be electrically connected to each other by the reflective layer (16). Accordingly, even if a poor connection occurs between one of the 2-1 bonding electrode (BDE2-1) and the 2-2 bonding electrode (BDE2-2) and the cathode electrode (CE), if the other of the 2-1 bonding electrode (BDE2-1) and the 2-2 bonding electrode (BDE2-2) is normally electrically connected to the cathode electrode (CE), both the 2-1 bonding electrode (BDE2-1) and the 2-2 bonding electrode (BDE2-2) can be electrically connected to the cathode electrode (CE) through the reflective layer (16). For example, the reflective layer (16) can further play a role in ensuring the reliability of the 2-1 bonding electrode (BDE2-1) and the 2-2 bonding electrode (BDE2-2).
[0320] In the above-described embodiment, the reflective layer (16) may be spaced apart from the first bonding electrode (BDE1). For example, when the reflective layer (16) electrically connects the 2-1 bonding electrode (BDE2-1) and the 2-2 bonding electrode (BDE2-2) to each other, the first bonding electrode (BDE1) may be spaced apart from the reflective layer (16). Accordingly, an electrical short circuit may not occur in which the first bonding electrode (BDE1) is electrically connected to the 2-1 bonding electrode (BDE2-1) and the 2-2 bonding electrode (BDE2-2) through the reflective layer (16).
[0321] Even when the light emitting element (LDb') further includes a reflective layer (16), each of the first-first protrusion (PRT1-1) of the first-first bonding electrode (BDE1-1), the first-second protrusion (PRT1-2) of the first-second bonding electrode (BDE1-2), the second-first protrusion (PRT2-1) of the second-first bonding electrode (BDE2-1), and the second-second protrusion (PRT2-2) of the second-second bonding electrode (BDE2-2) may protrude further than the planar reflective layer (16).
[0322] FIGS. 27 to 29 are schematic drawings for explaining a sub-pixel including a light-emitting element according to a fourth embodiment of the present disclosure. FIG. 27 is a plan view for explaining a sub-pixel including a light-emitting element according to a fourth embodiment of the present disclosure, FIG. 28 is a schematic cross-sectional view taken along line I4-I4' of FIG. 27, and FIG. 29 is a schematic cross-sectional view taken along line J4-J4' of FIG. 27.
[0323] Referring to FIG. 27, a sub-pixel (SPb') may be provided. The sub-pixel (SPb') may be any one of the first to third sub-pixels (SP1, SP2, SP3) described with reference to FIG. 3.
[0324] The sub-pixel (SPb') may include an anode electrode (AE) and a cathode electrode (CE). The anode electrode (AE) may be electrically connected to a sub-pixel circuit (SPC of FIG. 2) of the sub-pixel (SPb'). The cathode electrode (CE) may be spaced apart from the anode electrode (AE). The cathode electrode (CE) may be arranged at the same height as the anode electrode (AE). The anode electrode (AE) and the cathode electrode (CE) may define an electrode layer, and the anode electrode (AE) and the cathode electrode (CE) may be implemented as patterns of the electrode layer. In embodiments, the cathode electrode (CE) may extend in the second direction (DR2) and may be used as a common electrode for the pixel (PXL) and other pixels adjacent to the pixel (PXL). The cathode electrode (CE) may extend in the first direction (DR1) in another area not shown in FIG. 27 and be used as a common electrode for all of the sub-pixels (SP) shown in FIG. 3.
[0325] The anode electrode (AE) may include a first-first contact portion (CTP1-1) and a first-second contact portion (CTP1-2). The first-first contact portion (CTP1-1) and the first-second contact portion (CTP1-2) may be electrically connected to each other. The cathode electrode (CE) may include a second-first contact portion (CTP2-1) and a second-second contact portion (CTP2-2). The second-first contact portion (CTP2-1) and the second-second contact portion (CTP2-2) may be electrically connected to each other.
[0326] The light-emitting element (LDb') described with reference to FIGS. 24 to 26 may be disposed on the anode electrode (AE) and the cathode electrode (CE). The first-first bonding electrode (BDE1-1) of the light-emitting element (LDb') may be disposed on the first-first contact portion (CTP1-1) of the anode electrode (AE). The first-second bonding electrode (BDE1-2) of the light-emitting element (LDb') may be disposed on the first-second contact portion (CTP1-2) of the anode electrode (AE). The second-first bonding electrode (BDE2-1) of the light-emitting element (LDb') may be disposed on the second-first contact portion (CTP2-1) of the cathode electrode (CE). The second-second bonding electrode (BDE2-2) of the light-emitting element (LDb') can be placed on the second-second contact portion (CTP2-2) of the cathode electrode (CE).
[0327] The light-emitting element (LDb') can be electrically connected to the anode electrode (AE) and the cathode electrode (CE). The first-first bonding electrode (BDE1-1) and the first-second bonding electrode (BDE1-2) of the light-emitting element (LDb') can be electrically connected to the anode electrode (AE). The second-first bonding electrode (BDE2-1) and the second-second bonding electrode (BDE2-2) of the light-emitting element (LDb') can be electrically connected to the cathode electrode (CE).
[0328] Referring to FIGS. 27 to 29, a pixel circuit layer (PCL), a display element layer (DPL), and a light function layer (LFL) can be sequentially arranged on a substrate (SUB).
[0329] The pixel circuit layer (PCL) can be described substantially the same as (or similar to) that described with reference to FIGS. 9 to 11. Therefore, redundant descriptions are omitted.
[0330] A display element layer (DPL) may be disposed on a second passivation layer (PSV2). The display element layer (DPL) may include an anode electrode (AE), a cathode electrode (CE), a first bank (BNK1), a first-first reflective electrode (RFE1-1), a first-second reflective electrode (RFE1-2), a second-first reflective electrode (REF2-1), a second-second reflective electrode (RFE2-2), a light-emitting element (LDb'), an overcoat layer (OCL), a third passivation layer (PSV3), and a capping layer (CPL).
[0331] An electrode layer including an anode electrode (AE) and a cathode electrode (CE) may be disposed on a pixel circuit layer (PCL). The anode electrode (AE) may include a first-first contact portion (CTP1-1) and a first-second contact portion (CTP1-2), and the cathode electrode (CE) may include a second-first contact portion (CTP2-1) and a second-second contact portion (CTP2-2).
[0332] The anode electrode (AE) can be electrically connected to the connection electrode (CP) through a contact hole (not shown) penetrating the second passivation layer (PSV2). In this way, the anode electrode (AE) can be electrically connected to the transistor (T_SP).
[0333] The first-second contact portion (CTP1-2) can be spaced apart from the first-first contact portion (CTP1-1) in the second direction (DR2). Since the anode electrode (AE) can be electrically connected to the transistor (T_SP), the first-first contact portion (CTP1-1) and the first-second contact portion (CTP1-2) can be electrically connected to the transistor (T_SP).
[0334] The second-first contact portion (CTP2-1) and the second-second contact portion (CTP2-2) may be arranged between the first-first contact portion (CTP1-1) and the first-second contact portion (CTP1-2). The second-first contact portion (CTP2-1) may be spaced apart from the first-first contact portion (CTP1-1) in a second direction (DR2). The second-second contact portion (CTP2-2) may be spaced apart from the first-second contact portion (CTP1-2) in a direction opposite to the second direction (DR2). The cathode electrode (CE) may be electrically connected to the second power voltage node (VSSN) of FIG. 2. Accordingly, the second power voltage applied to the second power voltage node (VSSN) can be transmitted to the second-first contact portion (CTP2-1) and the second-second contact portion (CTP2-2).
[0335] A first bank (BNK1) may be disposed on the anode electrode (AE) and the cathode electrode (CE). The first bank (BNK1) may have a first opening (OP1) exposing portions of the anode electrode (AE) and the cathode electrode (CE). A light-emitting element (LDb') may be disposed in the first opening (OP1) of the first bank (BNK1). In this way, the first bank (BNK1) may be provided as a pixel defining film that defines an area where the light-emitting element (LDb') is positioned.
[0336] The first bank (BNK1) is configured to include a light-blocking material and may serve to prevent light mixing between adjacent sub-pixels. In embodiments, the first bank (BNK1) may include an organic material. For example, the first bank (BNK1) may include an organic insulating material such as an acrylic resin, an epoxy resin, a phenol resin, a polyamide resin, or a polyimide resin.
[0337] A first-first reflective electrode (RFE1-1) may be disposed on an exposed portion of a first-first contact portion (CTP1-1) and a side surface of a first bank (BNK1) adjacent thereto. A first-second reflective electrode (RFE1-2) may be disposed on an exposed portion of a first-second contact portion (CTP1-2) and a side surface of a first bank (BNK1) adjacent thereto. A second-first reflective electrode (RFE2-1) may be disposed on an exposed portion of a second-first contact portion (CTP2-1) and a side surface of a first bank (BNK1) adjacent thereto. A second-second reflective electrode (RFE2-2) may be disposed on an exposed portion of a second-second contact portion (CTP2-2) and a side surface of a first bank (BNK1) adjacent thereto. The first-first reflective electrode (RFE1-1), the first-second reflective electrode (RFE1-2), the second-first reflective electrode (RFE2-1), and the second-second reflective electrode (RFE2-2) may include conductive materials suitable for reflecting light. Accordingly, the light-emitting efficiency of the light-emitting element (LDb') may be improved. In embodiments, the first-first reflective electrode (RFE1-1), the first-second reflective electrode (RFE1-2), the second-first reflective electrode (RFE2-1), and the second-second reflective electrode (RFE2-2) may include at least one of aluminum (Al), silver (Ag), magnesium (Mg), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), titanium (Ti), and an alloy of two or more materials selected therefrom. However, the embodiments are not limited thereto.
[0338] The light-emitting element (LDb') can be electrically connected to the first-first contact portion (CTP1-1) of the anode electrode (AE) via the first-first reflective electrode (RFE1-1). For example, the first-first bonding electrode (BDE1-1) of the light-emitting element (LDb') can be electrically connected to the first-first reflective electrode (RFE1-1), and thus, the first-first bonding electrode (BDE1-1) can be electrically connected to the first-first contact portion (CTP1-1) of the anode electrode (AE) via the first-first reflective electrode (RFE1-1).
[0339] The light-emitting element (LDb') can be electrically connected to the first-second contact portion (CTP1-2) of the anode electrode (AE) via the first-second reflective electrode (RFE1-2). For example, the first-second bonding electrode (BDE1-2) of the light-emitting element (LDb') can be electrically connected to the first-second reflective electrode (RFE1-2), and thus, the first-second bonding electrode (BDE1-2) can be electrically connected to the first-second contact portion (CTP1-2) of the anode electrode (AE) via the first-second reflective electrode (RFE1-2).
[0340] The light-emitting element (LDb') can be electrically connected to the second-first contact portion (CTP2-1) of the cathode electrode (CE) via the second-first reflective electrode (RFE2-1). For example, the second-first bonding electrode (BDE2-1) of the light-emitting element (LDb') can be electrically connected to the second-first reflective electrode (RFE2-1), and thus, the second-first bonding electrode (BDE2-1) can be electrically connected to the second-first contact portion (CTP2-1) of the cathode electrode (CE) via the second-first reflective electrode (RFE2-1).
[0341] The light-emitting element (LDb') can be electrically connected to the second-second contact portion (CTP2-2) of the cathode electrode (CE) via the second-second reflective electrode (RFE2-2). For example, the second-second bonding electrode (BDE2-2) of the light-emitting element (LDb') can be connected to the second-second reflective electrode (RFE2-2), and thus, the second-second bonding electrode (BDE2-2) can be electrically connected to the second-second contact portion (CTP2-2) of the cathode electrode (CE) via the second-second reflective electrode (RFE2-2).
[0342] An overcoat layer (OCL) may be disposed within a first opening (OP1) in which a first-first reflective electrode (RFE1-1), a first-second reflective electrode (RFE1-2), a second-first reflective electrode (RFE2-1), a second-second reflective electrode (RFE2-2), and a light-emitting element (LDb') are disposed. The overcoat layer (OCL) may fix the light-emitting element (LDb') electrically connected to the first-first reflective electrode (RFE1-1), the first-second reflective electrode (RFE1-2), the second-first reflective electrode (RFE2-1), and the second-second reflective electrode (RFE2-2) so as not to move. The overcoat layer (OCL) may protect components disposed below the overcoat layer (OCL) from foreign substances such as dust and moisture. For example, the overcoat layer (OCL) may include at least one of an inorganic insulating layer and an organic insulating layer. For example, the overcoat layer (OCL) may include epoxy, but embodiments are not limited thereto.
[0343] A third passivation layer (PSV3) may be disposed on the first bank (BNK1) and the overcoat layer (OCL). A capping layer (CPL) may be disposed on the third passivation layer (PSV3). The third passivation layer (PSV3) and the capping layer (CPL) may be described substantially the same as (or similar to) those described with reference to FIGS. 9 to 11. Therefore, redundant descriptions are omitted.
[0344] A light functional layer (LFL) may be disposed on a capping layer (CPL). The light functional layer (LFL) may include a second bank (BNK2), a light reflecting layer (RFL), a fourth passivation layer (PSV4), a light functional pattern (CCP), a low-refractive layer (LRL), and a color filter layer (CFL). The light functional layer (LFL) may be described substantially the same as (or similar to) that described with reference to FIGS. 9 to 11. Therefore, redundant descriptions are omitted.
[0345] Referring again to FIGS. 24 to 27 and 29, a second-first bridge electrode (BRE2-1) may be further disposed to ensure reliability of the electrical connection between the second-first bonding electrode (BDE2-1) and the second-first contact portion (CTP2-1).
[0346] In one embodiment, the second-first bonding electrode (BDE2-1) may be normally electrically connected to the second-first reflective electrode (RFE2-1) which is in electrical contact with the second-first contact portion (CTP2-1). For example, in a process of arranging a light-emitting element (LDb') on a pixel circuit layer (PCL), the second-first bonding electrode (BDE2-1) may be electrically connected to the second-first contact portion (CTP2-1). The second-first bridge electrode (BRE2-1) may be omitted.
[0347] In one embodiment, the second-first bonding electrode (BDE2-1) may not be normally electrically connected to the second-first reflective electrode (RFE2-1) that is in electrical contact with the second-first contact portion (CTP2-1). For example, in a process of arranging a light-emitting element (LDb') on a pixel circuit layer (PCL), the second-first bonding electrode (BDE2-1) may not be electrically connected to the second-first contact portion (CTP2-1). In this case, if a connection failure is sensed through a subsequent light-emitting inspection process or the like, a second-first bridge electrode (BRE2-1) may be arranged to electrically connect the second-first bonding electrode (BDE2-1) and the second-first contact portion (CTP2-1).
[0348] The second-first bridge electrode (BRE2-1) may be arranged along the side surface of the second protrusion (PRT2) of the second-first bonding electrode (BDE2-1). The second-first bridge electrode (BRE2-1) may extend from the side surface of the second protrusion (PRT2) and may contact the second-first reflective electrode (RFE2-1) which electrically contacts the second-first contact portion (CTP2-1). Accordingly, the second-first bonding electrode (BDE2-1) may be electrically connected to the second-first contact portion (CTP2-1) via the second-first bridge electrode (BRE2-1).
[0349] In the embodiments, the planar surface area of the second-first contact portion (CTP2-1) may be sufficiently larger than the planar surface area of the second-first bonding electrode (BDE2-1), and further, the second-first bonding electrode (BDE2-1) may completely overlap a portion of the second-first contact portion (CTP2-1) on the planar surface. Accordingly, a sufficient space may be secured in which the second-first bridge electrode (BRE2-1) may be arranged.
[0350] In Fig. 29, the 2-1 bonding electrode (BDE2-1) and the 2-1 bridge electrode (BRE2-1) are illustrated, but the above-described contents may be substantially identically (or similarly) applied to the 2-2 bonding electrode (BDE2-2). For example, in order to secure the reliability of the electrical connection between the 2-2 bonding electrode (BDE2-2) and the 2-2 contact portion (CTP2-2), a 2-2 bridge electrode (not shown) may be further arranged.
[0351] Referring again to FIGS. 24 to 28, in order to secure the reliability of the electrical connection between the 1-1 bonding electrode (BDE1-1) and the 1-1 contact portion (CTP1-1), a 1-1 bridge electrode (BRE1-1) may be further disposed. In order to secure the reliability of the electrical connection between the 1-2 bonding electrode (BDE1-2) and the 1-2 contact portion (CTP1-2), a 1-2 bridge electrode (BRE1-2) may be further disposed. Here, the 1-1 bridge electrode (BRE1-1) and the 1-2 bridge electrode (BRE1-2) may be described substantially the same as (or similar to) what has been described with reference to FIGS. 19 to 22. Therefore, redundant descriptions are omitted.
[0352] As described above with reference to FIGS. 25 to 29, the light emitting element (LDb') of the present disclosure may have a relatively small distance between bonding electrodes electrically connected to different semiconductor layers, and thus may have excellent light emitting efficiency. Even if a connection failure occurs in the process of arranging the light emitting element (LDb') on the pixel circuit layer (PCL), the above-described connection failure can be easily repaired using the bridge electrodes (BRE1-1, BRE1-2, BRE2-1, and a 2-2 bridge electrode not shown) without the need for a removal process for removing the light emitting element (LDb').
[0353] FIGS. 30 to 33 are schematic drawings for explaining a light-emitting element according to a fifth embodiment of the present disclosure. FIG. 30 is a plan view for explaining a light-emitting element according to a fifth embodiment of the present disclosure, FIG. 31 is a schematic cross-sectional view taken along line X5-X5' of FIG. 30, FIG. 32 is a schematic cross-sectional view taken along line Y5-Y5' of FIG. 30, and FIG. 33 is a schematic cross-sectional view taken along line Z5-Z5' of FIG. 30.
[0354] Referring to FIGS. 30 to 33, the light emitting element (LDc) may include a light emitting layer (EST), a first bonding electrode (BDE1), and a second bonding electrode (BDE2).
[0355] The light-emitting stack (EST) can be described substantially the same as (or similar to) that described with reference to FIGS. 6 to 8. The light-emitting stack (EST) can include a first semiconductor layer (11), a second semiconductor layer (12) disposed on the first semiconductor layer (11), and an active layer (13) disposed between the first semiconductor layer (11) and the second semiconductor layer (12). In embodiments, the light-emitting stack (EST) may further include an auxiliary layer (14) disposed on the second semiconductor layer (12). Hereinafter, redundant descriptions are omitted.
[0356] The first bonding electrode (BDE1) may include a first-first bonding electrode (BDE1-1) and a first-second bonding electrode (BDE1-2). The first-first bonding electrode (BDE1-1) may be electrically connected to a lower surface of the first semiconductor layer (11). The first-second bonding electrode (BDE1-2) may be electrically connected to a lower surface of the first semiconductor layer (11). The first-second bonding electrode (BDE1-2) may be spaced apart from the first-first bonding electrode (BDE1-1) in a second direction (DR2). The first-first bonding electrode (BDE1-1) and the first-second bonding electrode (BDE1-2) may not be in physical contact with the second semiconductor layer (12) and the active layer (13). In the embodiments, the first-first bonding electrode (BDE1-1) and the first-second bonding electrode (BDE1-2) may include a eutectic metal.
[0357] The first-first bonding electrode (BDE1-1) and the first-second bonding electrode (BDE1-2) may be electrically connected to the anode electrode (AE in FIG. 2). For example, each of the first-first bonding electrode (BDE1-1) and the first-second bonding electrode (BDE1-2) may be electrically connected to the anode electrode (AE), or may be electrically connected to at least one electrode (or conductive layer) that contacts the anode electrode (AE).
[0358] The second bonding electrode (BDE2) may include a second-first bonding electrode (BDE2-1) and a second-second bonding electrode (BDE2-2). The second-first bonding electrode (BDE2-1) may be electrically connected to the second semiconductor layer (12). The second-second bonding electrode (BDE2-2) may be electrically connected to the second semiconductor layer (12). The second-second bonding electrode (BDE2-2) may be spaced apart from the second-first bonding electrode (BDE2-1) in the second direction (DR2). The second-first bonding electrode (BDE2-1) and the second-second bonding electrode (BDE2-2) may not be in physical contact with the first semiconductor layer (11), the active layer (13), and the first bonding electrode (BDE1). In the embodiments, the second-1 bonding electrode (BDE2-1) and the second-2 bonding electrode (BDE2-2) may include a eutectic metal.
[0359] The second-first bonding electrode (BDE2-1) and the second-second bonding electrode (BDE2-2) may be electrically connected to a cathode electrode (CE in FIG. 2). For example, each of the second-first bonding electrode (BDE2-1) and the second-second bonding electrode (BDE2-2) may be electrically connected to the cathode electrode (CE), or may be electrically connected to at least one electrode (or conductive layer) that contacts the cathode electrode (CE).
[0360] The second-first bonding electrode (BDE2-1) may be disposed between the first-first bonding electrode (BDE1-1) and the first-second bonding electrode (BDE1-2). The first-second bonding electrode (BDE1-2) may be disposed between the second-first bonding electrode (BDE2-1) and the second-second bonding electrode (BDE2-2). Accordingly, the separation distance between the bonding electrodes (BDE2-1, BDE2-2) included in the second bonding electrode (BDE2) and the bonding electrodes (BDE1-1, BDE1-2) included in the first bonding electrode (BDE1) may be relatively reduced. Accordingly, the current distribution within the light-emitting element (LDc) may become more uniform, so that the light-emitting efficiency of the light-emitting element (LDc) may be improved.
[0361] In one embodiment, a first exposed surface (ES1) and a second exposed surface (ES2) that do not overlap the first semiconductor layer (11) and the active layer (13) in a planar manner may be defined on the opposite surface of the second semiconductor layer (12) facing the outer surface of the active layer (13). For example, the first exposed surface (ES1) and the second exposed surface (ES2) may be surfaces where the second semiconductor layer (12) is exposed by removing a portion of the first semiconductor layer (11) and the active layer (13). The first exposed surface (ES1) may be positioned between the first-first bonding electrode (BDE1-1) and the first-second bonding electrode (BDE1-2) in a planar manner, and the second exposed surface (ES2) may be spaced apart from the first exposed surface (ES1) in a second direction (DR2) and adjacent to one side of the second semiconductor layer (12). The second-first bonding electrode (BDE2-1) may be electrically connected to the first exposed surface (ES1), and the second-second bonding electrode (BDE2-2) may be electrically connected to the second exposed surface (ES2).
[0362] In one embodiment, the first-first bonding electrode (BDE1-1) may include a first-first protrusion (PRT1-1) that protrudes in a direction opposite to the second direction (DR2) so as not to overlap with the planar light-emitting stack (EST). The first-first protrusion (PRT1-1) of the first-first bonding electrode (BDE1-1) may serve to secure a connection path between the first-first bonding electrode (BDE1-1) and the anode electrode (AE) when a connection failure occurs with the anode electrode (AE). This will be described in detail later with reference to FIG. 35.
[0363] In one embodiment, the first-second bonding electrode (BDE1-2) may include a first-second protrusion (PRT1-2) that protrudes in at least one of the first direction (DR1) and the direction opposite to the first direction (DR1) so as not to overlap with the planar light-emitting stack (EST). For example, as illustrated in FIG. 30, the first-second bonding electrode (BDE1-2) may include a first-second protrusion (PRT1-2) that protrudes in the first direction (DR1) and the direction opposite to the first direction (DR1) relative to the light-emitting stack (EST). However, embodiments of the first-second protrusion (PRT1-2) are not limited to those illustrated in FIG. 30. For example, the first-second bonding electrode (BDE1-2) may include a first-second protrusion that protrudes only in the first direction (DR1) relative to the light-emitting stack (EST), or may include a first-second protrusion that protrudes only in the direction opposite to the first direction (DR1) relative to the light-emitting stack (EST).
[0364] The first-second protrusion (PRT1-2) of the first-second bonding electrode (BDE1-2) can serve to secure a connection path between the first-second bonding electrode (BDE1-2) and the anode electrode (AE) in the event of a connection failure with the anode electrode (AE). This will be described in detail later with reference to Fig. 37.
[0365] In one embodiment, the second-first bonding electrode (BDE2-1) may include a second-first protrusion (PRT2-1) that protrudes in at least one of the first direction (DR1) and the direction opposite to the first direction (DR1) so as not to overlap with the planar light-emitting stack (EST). For example, as illustrated in FIG. 30, the second-first bonding electrode (BDE2-1) may include a second-first protrusion (PRT2-1) that protrudes in the first direction (DR1) and the direction opposite to the first direction (DR1) relative to the light-emitting stack (EST). However, embodiments of the second-first protrusion (PRT2-1) are not limited to those illustrated in FIG. 30. For example, the second-first bonding electrode (BDE2-1) may include a second-first protrusion that protrudes only in the first direction (DR1) relative to the light-emitting stack (EST), or may include a second-first protrusion that protrudes only in the direction opposite to the first direction (DR1) relative to the light-emitting stack (EST).
[0366] The second-first protrusion (PRT2-1) of the second-first bonding electrode (BDE2-1) can serve to secure a connection path between the second-first bonding electrode (BDE2-1) and the cathode electrode (CE) when a connection failure occurs with the cathode electrode (CE). This will be described in detail later with reference to Fig. 36.
[0367] In one embodiment, the second-second bonding electrode (BDE2-2) may include a second-second protrusion (PRT2-2) that protrudes in the second direction (DR2) so as not to overlap with the planar light-emitting stack (EST). The second-second protrusion (PRT2-2) of the second-second bonding electrode (BDE2-2) may serve to secure a connection path between the second-second bonding electrode (BDE2-2) and the cathode electrode (CE) when a connection failure occurs with the cathode electrode (CE). This will be described in detail later with reference to FIG. 35.
[0368] In one embodiment, the light emitting element (LDc) may further include an insulating film (15) surrounding at least a portion of the outer surface of the light emitting stack (EST). For example, the insulating film (15) may entirely surround the outer surface of the light emitting stack (EST) except for a region where the light emitting stack (EST) and the first and second bonding electrodes (BDE1, BDE2) are electrically connected.
[0369] The insulating film (15) can serve to prevent an electrical short circuit that may occur when the active layer (13) comes into contact with a conductive material other than the first and second semiconductor layers (11, 12). The insulating film (15) is disposed between the 2-1 bonding electrode (BDE2-1) and the first semiconductor layer (11), and between the 2-1 bonding electrode (BDE2-1) and the active layer (13), so as to prevent an electrical short circuit that may occur when the 2-1 bonding electrode (BDE2-1) comes into contact with the first semiconductor layer (11) and the active layer (13). An insulating film (15) is disposed between the second-second bonding electrode (BDE2-2) and the first semiconductor layer (11), and between the second-second bonding electrode (BDE2-2) and the active layer (13), so as to prevent an electrical short circuit that may occur when the second-second bonding electrode (BDE2-2) comes into contact with the first semiconductor layer (11) and the active layer (13). The insulating film (15) may include a transparent insulating material. Some of the first and second bonding electrodes (BDE1, BDE2) may be exposed without being covered by the insulating film (15).
[0370] Even when the light emitting element (LDc) further includes an insulating film (15), each of the first-first protrusion (PRT1-1) of the first-first bonding electrode (BDE1-1), the first-second protrusion (PRT1-2) of the first-second bonding electrode (BDE1-2), the second-first protrusion (PRT2-1) of the second-first bonding electrode (BDE2-1), and the second-second protrusion (PRT2-2) of the second-second bonding electrode (BDE2-2) may protrude further than the insulating film (15) on the plane.
[0371] In one embodiment, the light emitting element (LDc) may further include a reflective layer (16) surrounding at least a portion of a side surface of the light emitting stack (EST). For example, the reflective layer (16) may surround a side surface of the auxiliary layer (14) and a portion of a side surface of the second semiconductor layer (12) above the second bonding electrode (BDE2).
[0372] The reflective layer (16) can play a role in improving the front emission efficiency of light generated from the active layer (13). For example, an insulating film (15) can be disposed between the reflective layer (16) and the light-emitting stack (EST), and the reflective layer (16) can include an insulating material having a different refractive index from the insulating film (15). Accordingly, total reflection of light can be induced at the interface between the reflective layer (16) and the insulating film (15), so that the light generated from the active layer (13) can travel in the front direction of the display panel (DP of FIG. 3) (e.g., the third direction (DR3) and a direction crossing therewith). For example, the reflective layer (16) can include a material suitable for reflecting incident light. For example, the reflective layer (16) may include at least one of aluminum (Al), silver (Ag), magnesium (Mg), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), titanium (Ti), and an alloy of two or more materials selected from these.
[0373] In one embodiment, the reflective layer (16) may be in contact with each of the second-first bonding electrode (BDE2-1) and the second-second bonding electrode (BDE2-2). For example, as illustrated in FIG. 32, the reflective layer (16) may be in contact with the second-first protrusion (PRT2-1 of FIG. 30) of the second-first bonding electrode (BDE2-1). As illustrated in FIG. 31, the reflective layer (16) may be in contact with the second-second protrusion (PRT2-2 of FIG. 30) of the second-second bonding electrode (BDE2-2). The reflective layer (16) may be configured to include a conductive material. Accordingly, the second-first bonding electrode (BDE2-1) and the second-second bonding electrode (BDE2-2) may be electrically connected to each other by the reflective layer (16). Accordingly, even if a poor connection occurs between one of the 2-1 bonding electrode (BDE2-1) and the 2-2 bonding electrode (BDE2-2) and the cathode electrode (CE), if the other of the 2-1 bonding electrode (BDE2-1) and the 2-2 bonding electrode (BDE2-2) is normally electrically connected to the cathode electrode (CE), both the 2-1 bonding electrode (BDE2-1) and the 2-2 bonding electrode (BDE2-2) can be electrically connected to the cathode electrode (CE) through the reflective layer (16). For example, the reflective layer (16) can further play a role in ensuring the reliability of the 2-1 bonding electrode (BDE2-1) and the 2-2 bonding electrode (BDE2-2).
[0374] In the above-described embodiment, the reflective layer (16) may be spaced apart from the first bonding electrode (BDE1). For example, when the reflective layer (16) electrically connects the 2-1 bonding electrode (BDE2-1) and the 2-2 bonding electrode (BDE2-2) to each other, the 1-1 bonding electrode (BDE1-1) and the 1-2 bonding electrode (BDE1-2) may be spaced apart from the reflective layer (16). Accordingly, an electrical short circuit may not occur in which the 1-1 bonding electrode (BDE1-1) and the 1-2 bonding electrode (BDE1-2) are electrically connected to the 2-1 bonding electrode (BDE2-1) and the 2-2 bonding electrode (BDE2-2) through the reflective layer (16).
[0375] Even when the light emitting element (LDc) further includes a reflective layer (16), each of the first-first protrusion (PRT1-1) of the first-first bonding electrode (BDE1-1), the first-second protrusion (PRT1-2) of the first-second bonding electrode (BDE1-2), the second-first protrusion (PRT2-1) of the second-first bonding electrode (BDE2-1), and the second-second protrusion (PRT2-2) of the second-second bonding electrode (BDE2-2) may protrude further than the planar reflective layer (16).
[0376] FIGS. 34 to 37 are schematic drawings for explaining a sub-pixel including a light-emitting element according to a fifth embodiment of the present disclosure. FIG. 34 is a plan view for explaining a sub-pixel including a light-emitting element according to a fifth embodiment of the present disclosure, FIG. 35 is a schematic cross-sectional view taken along line I5-I5' of FIG. 34, FIG. 36 is a schematic cross-sectional view taken along line J5-J5' of FIG. 34, and FIG. 37 is a schematic cross-sectional view taken along line K5-K5' of FIG. 34.
[0377] Referring to FIG. 34, a sub-pixel (SPc) may be provided. The sub-pixel (SPc) may be any one of the first to third sub-pixels (SP1, SP2, SP3) described with reference to FIG. 3.
[0378] The sub-pixel (SPc) may include an anode electrode (AE) and a cathode electrode (CE). The anode electrode (AE) may be electrically connected to a sub-pixel circuit (SPC of FIG. 2) of the sub-pixel (SPc). The cathode electrode (CE) may be spaced apart from the anode electrode (AE). The cathode electrode (CE) may be arranged at the same height as the anode electrode (AE). The anode electrode (AE) and the cathode electrode (CE) may define an electrode layer, and the anode electrode (AE) and the cathode electrode (CE) may be implemented as patterns of the electrode layer. In embodiments, the cathode electrode (CE) may extend in a first direction (DR1) and may be used as a common electrode for the pixel (PXL) and other pixels adjacent to the pixel (PXL). The cathode electrode (CE) may extend in a second direction (DR2) and may be used as a common electrode for all of the sub-pixels (SP) illustrated in FIG. 3.
[0379] The anode electrode (AE) may include a first-first contact portion (CTP1-1) and a first-second contact portion (CTP1-2). The first-first contact portion (CTP1-1) and the first-second contact portion (CTP1-2) may be electrically connected to each other. The cathode electrode (CE) may include a second-first contact portion (CTP2-1) and a second-second contact portion (CTP2-2). The second-first contact portion (CTP2-1) and the second-second contact portion (CTP2-2) may be electrically connected to each other.
[0380] The light-emitting element (LDc) described with reference to FIGS. 30 to 33 may be disposed on the anode electrode (AE) and the cathode electrode (CE). The first-first bonding electrode (BDE1-1) of the light-emitting element (LDc) may be disposed on the first-first contact portion (CTP1-1) of the anode electrode (AE). The first-second bonding electrode (BDE1-2) of the light-emitting element (LDc) may be disposed on the first-second contact portion (CTP1-2) of the anode electrode (AE). The second-first bonding electrode (BDE2-1) of the light-emitting element (LDc) may be disposed on the second-first contact portion (CTP2-1) of the cathode electrode (CE). The second-second bonding electrode (BDE2-2) of the light-emitting element (LDc) can be placed on the second-second contact portion (CTP2-2) of the cathode electrode (CE).
[0381] The light emitting element (LDc) can be electrically connected to the anode electrode (AE) and the cathode electrode (CE). The first-first bonding electrode (BDE1-1) and the first-second bonding electrode (BDE1-2) of the light emitting element (LDc) can be electrically connected to the anode electrode (AE). The second-first bonding electrode (BDE2-1) and the second-second bonding electrode (BDE2-2) of the light emitting element (LDc) can be electrically connected to the cathode electrode (CE).
[0382] Referring to FIGS. 34 to 37, a pixel circuit layer (PCL), a display element layer (DPL), and a light function layer (LFL) can be sequentially arranged on a substrate (SUB).
[0383] The pixel circuit layer (PCL) can be described substantially the same as (or similar to) that described with reference to FIGS. 9 to 11. Therefore, redundant descriptions are omitted.
[0384] A display element layer (DPL) may be disposed on a second passivation layer (PSV2). The display element layer (DPL) may include an anode electrode (AE), a cathode electrode (CE), a first bank (BNK1), a first-first reflective electrode (REF1-1), a first-second reflective electrode (RFE1-2), a second-first reflective electrode (RFE2-1), a second-second reflective electrode (RFE2-2), a light-emitting element (LDc), an overcoat layer (OCL), a third passivation layer (PSV3), and a capping layer (CPL).
[0385] An electrode layer including an anode electrode (AE) and a cathode electrode (CE) may be disposed on a pixel circuit layer (PCL). The anode electrode (AE) may include a first-first contact portion (CTP1-1) and a first-second contact portion (CTP1-2), and the cathode electrode (CE) may include a second-first contact portion (CTP2-1) and a second-second contact portion (CTP2-2).
[0386] The anode electrode (AE) can be electrically connected to the connection electrode (CP) through a contact hole (not shown) penetrating the second passivation layer (PSV). In this way, the anode electrode (AE) can be electrically connected to the transistor (T_SP).
[0387] The first-second contact portion (CTP1-2) can be spaced apart from the first-first contact portion (CTP1-1) in the second direction (DR2). Since the anode electrode (AE) can be electrically connected to the transistor (T_SP), the first-first contact portion (CTP1-1) and the first-second contact portion (CTP1-2) can be electrically connected to the transistor (T_SP).
[0388] The second-first contact portion (CTP2-1) may be arranged between the first-first contact portion (CTP1-1) and the first-second contact portion (CTP1-2). The second-second contact portion (CTP2-2) may be spaced apart from the first-second contact portion (CTP1-2) in the second direction (DR2). The cathode electrode (CE) may be electrically connected to the second power voltage node (VSSN) of FIG. 2. Accordingly, the second power voltage applied to the second power voltage node (VSSN) may be transmitted to the second-first contact portion (CTP2-1) and the second-second contact portion (CTP2-2).
[0389] A first bank (BNK1) may be disposed on an anode electrode (AE) and a cathode electrode (CE). The first bank (BNK1) may have a first opening (OP1) exposing portions of the anode electrode (AE) and the cathode electrode (CE). A light-emitting element (LDc) may be disposed in the first opening (OP1) of the first bank (BNK1). In this way, the first bank (BNK1) may be provided as a pixel defining film that defines an area where the light-emitting element (LDc) is positioned.
[0390] The first bank (BNK1) is configured to include a light-blocking material and may serve to prevent light mixing between adjacent sub-pixels. In embodiments, the first bank (BNK1) may include an organic material. For example, the first bank (BNK1) may include an organic insulating material such as an acrylic resin, an epoxy resin, a phenol resin, a polyamide resin, or a polyimide resin.
[0391] A first-first reflective electrode (RFE1-1) may be disposed on an exposed portion of a first-first contact portion (CTP1-1) and a side surface of a first bank (BNK1) adjacent thereto. A first-second reflective electrode (RFE1-2) may be disposed on an exposed portion of a first-second contact portion (CTP1-2) and a side surface of a first bank (BNK1) adjacent thereto. A second-first reflective electrode (RFE2-1) may be disposed on an exposed portion of a second-first contact portion (CTP2-1) and a side surface of a first bank (BNK1) adjacent thereto. A second-second reflective electrode (RFE2-2) may be disposed on an exposed portion of a second-second contact portion (CTP2-2) and a side surface of a first bank (BNK1) adjacent thereto. The first-first reflective electrode (RFE1-1), the first-second reflective electrode (RFE1-2), the second-first reflective electrode (RFE2-1), and the second-second reflective electrode (RFE2-2) may include conductive materials suitable for reflecting light. Accordingly, the light-emitting efficiency of the light-emitting element (LDc) may be improved. In embodiments, the first-first reflective electrode (RFE1-1), the first-second reflective electrode (RFE1-2), the second-first reflective electrode (RFE2-1), and the second-second reflective electrode (RFE2-2) may include at least one of aluminum (Al), silver (Ag), magnesium (Mg), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), titanium (Ti), and an alloy of two or more materials selected therefrom. However, the embodiments are not limited thereto.
[0392] The light emitting element (LDc) can be electrically connected to the first-first contact portion (CTP1-1) of the anode electrode (AE) via the first-first reflective electrode (RFE1-1). For example, the first-first bonding electrode (BDE1-1) of the light emitting element (LDc) can be electrically connected to the first-first reflective electrode (RFE1-1), and thus, the first-first bonding electrode (BDE1-1) can be electrically connected to the first-first contact portion (CTP1-1) of the anode electrode (AE) via the first-first reflective electrode (BDE1-1).
[0393] The light emitting element (LDc) can be electrically connected to the first-second contact portion (CTP1-2) of the anode electrode (AE) via the first-second reflective electrode (RFE1-2). For example, the first-second bonding electrode (BDE1-2) of the light emitting element (LDc) can be electrically connected to the first-second reflective electrode (RFE1-2), and thus, the first-second bonding electrode (BDE1-2) can be electrically connected to the first-second contact portion (CTP1-2) of the anode electrode (AE) via the first-second reflective electrode (BDE1-2).
[0394] The light-emitting element (LDc) can be electrically connected to the second-first contact portion (CTP2-1) of the cathode electrode (CE) via the second-first reflective electrode (RFE2-1). For example, the second-first bonding electrode (BDE2-1) of the light-emitting element (LDc) can be electrically connected to the second-first reflective electrode (RFE2-1), and thus, the second-first bonding electrode (BDE2-1) can be electrically connected to the second-first contact portion (CTP2-1) of the cathode electrode (CE) via the second-first reflective electrode (RFE2-1).
[0395] The light-emitting element (LDc) can be electrically connected to the second-second contact portion (CTP2-2) of the cathode electrode (CE) via the second-second reflective electrode (RFE2-2). For example, the second-second bonding electrode (BDE2-2) of the light-emitting element (LDc) can be electrically connected to the second-second reflective electrode (RFE2-2), and thus, the second-second bonding electrode (BDE2-2) can be electrically connected to the second-second contact portion (CTP2-2) of the cathode electrode (CE) via the second-second reflective electrode (RFE2-2).
[0396] An overcoat layer (OCL) may be disposed within a first opening (OP1) in which a first-first reflective electrode (RFE1-1), a first-second reflective electrode (RFE1-2), a second-first reflective electrode (RFE2-1), a second-second reflective electrode (RFE2-2), and a light-emitting element (LDc) are disposed. The overcoat layer (OCL) may fix the light-emitting element (LDc) electrically connected to the first-first reflective electrode (RFE1-1), the first-second reflective electrode (RFE1-2), the second-first reflective electrode (RFE2-1), and the second-second reflective electrode (RFE2-2) so as not to move. The overcoat layer (OCL) may protect components disposed below the overcoat layer (OCL) from foreign substances such as dust and moisture. For example, the overcoat layer (OCL) may include at least one of an inorganic insulating layer and an organic insulating layer. For example, the overcoat layer (OCL) may include epoxy, but embodiments are not limited thereto.
[0397] A third passivation layer (PSV3) may be disposed on the first bank (BNK1) and the overcoat layer (OCL). A capping layer (CPL) may be disposed on the third passivation layer (PSV3). The third passivation layer (PSV3) and the capping layer (CPL) may be described substantially the same as (or similar to) those described with reference to FIGS. 9 to 11. Therefore, redundant descriptions are omitted.
[0398] A light functional layer (LFL) may be disposed on a capping layer (CPL). The light functional layer (LFL) may include a second bank (BNK2), a light reflecting layer (RFL), a fourth passivation layer (PSV4), a light functional pattern (CCP), a low-refractive layer (LRL), and a color filter layer (CFL). The light functional layer (LFL) may be described substantially the same as (or similar to) that described with reference to FIGS. 9 to 11. Therefore, redundant descriptions are omitted.
[0399] Referring again to FIGS. 30 to 34 and 36, a second-first bridge electrode (BRE2-1) may be further disposed to ensure reliability of the electrical connection between the second-first bonding electrode (BDE2-1) and the second-first contact portion (CTP2-1).
[0400] In one embodiment, the second-first bonding electrode (BDE2-1) may be normally electrically connected to the second-first reflective electrode (RFE2-1) which is in electrical contact with the second-first contact portion (CTP2-1). That is, in a process of arranging a light-emitting element (LDc) on a pixel circuit layer (PCL), the second-first bonding electrode (BDE2-1) may be electrically connected to the second-first contact portion (CTP2-1). The second-first bridge electrode (BRE2-1) may be omitted.
[0401] In one embodiment, the second-first bonding electrode (BDE2-1) may not be normally electrically connected to the second-first reflective electrode (RFE2-1) that is in electrical contact with the second-first contact portion (CTP2-1). For example, in a process of arranging a light-emitting element (LDc) on a pixel circuit layer (PCL), the second-first bonding electrode (BDE2-1) may not be electrically connected to the second-first contact portion (CTP2-1). If a connection failure is sensed through a subsequent light-emitting inspection process or the like, a second-first bridge electrode (BRE2-1) may be arranged to electrically connect the second-first bonding electrode (BDE2-1) and the second-first contact portion (CTP2-1).
[0402] The second-first bridge electrode (BRE2-1) may be arranged along the side surface of the second-first protrusion (PRT2-1) of the second-first bonding electrode (BDE2-1). The second-first bridge electrode (BRE2-1) may extend from the side surface of the second-first protrusion (PRT2-1) and may contact the second-first reflective electrode (RFE2-1) which electrically contacts the second-first contact portion (CTP2-1). Accordingly, the second-first bonding electrode (BDE2-1) may be electrically connected to the second-first contact portion (CTP2-1) via the second-first bridge electrode (BRE2-1).
[0403] In the embodiments, the planar surface area of the second-first contact portion (CTP2-1) may be sufficiently larger than the planar surface area of the second-first bonding electrode (BDE2-1), and further, the second-first bonding electrode (BDE2-1) may completely overlap a portion of the second-first contact portion (CTP2-1) on the planar surface. Accordingly, a sufficient space may be secured in which the second-first bridge electrode (BRE2-1) may be arranged.
[0404] Referring again to FIGS. 30 to 34 and 37, a first-second bridge electrode (BRE1-2) may be further disposed to ensure reliability of the electrical connection between the first-second bonding electrode (BDE1-2) and the first-second contact portion (CTP1-2).
[0405] In one embodiment, the first-second bonding electrode (BDE1-2) may be normally electrically connected to the first-second reflective electrode (RFE1-2) which is in electrical contact with the first-second contact portion (CTP1-2). For example, in a process of arranging a light-emitting element (LDc) on a pixel circuit layer (PCL), the first-second bonding electrode (BDE1-2) may be electrically connected to the first-second contact portion (CTP1-2). The first-second bridge electrode (BRE1-2) may be omitted.
[0406] In one embodiment, the first-second bonding electrode (BDE1-2) may not be normally electrically connected to the first-second reflective electrode (RFE1-2) that is in electrical contact with the first-second contact portion (CTP1-2). For example, in a process of arranging a light-emitting element (LDc) on a pixel circuit layer (PCL), the first-second bonding electrode (BDE1-2) may not be electrically connected to the first-second contact portion (CTP1-2). If a connection failure is sensed through a subsequent light-emitting inspection process or the like, a first-second bridge electrode (BRE1-2) may be arranged to electrically connect the first-second bonding electrode (BDE1-2) and the first-second contact portion (CTP1-2).
[0407] The first-second bridge electrode (BRE1-2) may be arranged along the outer surface of the first-second protrusion (PRT1-2) of the first-second bonding electrode (BDE1-2). The first-second bridge electrode (BRE1-2) may extend from the outer surface of the first-second protrusion (PRT1-2) and may contact the first-second reflective electrode (RFE1-2) which electrically contacts the first-second contact portion (CTP1-2). Accordingly, the first-second bonding electrode (BDE1-2) may be electrically connected to the first-second contact portion (CTP1-2) through the first-second bridge electrode (BRE1-2).
[0408] In the embodiments, the planar surface area of the first-second contact portion (CTP1-2) may be sufficiently larger than the planar surface area of the first-second bonding electrode (BDE1-2), and further, the first-second bonding electrode (BDE1-2) may completely overlap a portion of the first-second contact portion (CTP1-2) on the planar surface. Accordingly, a sufficient space may be secured in which the first-second bridge electrode (BRE1-2) may be arranged.
[0409] Referring to FIGS. 30 to 35, in order to secure the reliability of the electrical connection between the 1-1 bonding electrode (BDE1-1) and the 1-1 contact portion (CTP1-1), a 1-1 bridge electrode (BRE1-1) may be further arranged.
[0410] In one embodiment, the first-first bonding electrode (BDE1-1) may be normally electrically connected to the first-first reflective electrode (RFE1-1) which is in electrical contact with the first-first contact portion (CTP1-1). For example, in a process of arranging a light-emitting element (LDc) on a pixel circuit layer (PCL), the first-first bonding electrode (BDE1-1) may be electrically connected to the first-first contact portion (CTP1-1). The first-first bridge electrode (BRE1-1) may be omitted.
[0411] In one embodiment, the first-first bonding electrode (BDE1-1) may not be normally electrically connected to the first-first reflective electrode (RFE1-1) that is in electrical contact with the first-first contact portion (CTP1-1). For example, in a process of arranging a light-emitting element (LDc) on a pixel circuit layer (PCL), the first-first bonding electrode (BDE1-1) may not be electrically connected to the first-first contact portion (CTP1-1). If a connection failure is sensed through a subsequent light-emitting inspection process, a first-first bridge electrode (BRE1-1) may be arranged to electrically connect the first-first bonding electrode (BDE1-1) and the first-first contact portion (CTP1-1).
[0412] The first-first bridge electrode (BRE1-1) may be arranged along the outer surface of the first-first protrusion (PRT1-1) of the first-first bonding electrode (BDE1-1). The first-first bridge electrode (BRE1-1) may extend from the outer surface of the first-first protrusion (PRT1-1) and may contact the first-first reflective electrode (RFE1-1) which electrically contacts the first-first contact portion (CTP1-1). Accordingly, the first-first bonding electrode (BDE1-1) may be electrically connected to the first-first contact portion (CTP1-1) through the first-first bridge electrode (BRE1-1).
[0413] In the embodiments, the planar surface area of the first-first contact portion (CTP1-1) may be sufficiently larger than the planar surface area of the first-first bonding electrode (BDE1-1), and further, the first-first bonding electrode (BDE1-1) may completely overlap a portion of the first-first contact portion (CTP1-1) on the planar surface. Accordingly, a sufficient space may be secured in which the first-first bridge electrode (BRE1-1) may be arranged.
[0414] Referring to FIGS. 30 to 35, in order to ensure the reliability of the electrical connection between the 2-2 bonding electrode (BDE2-2) and the 2-2 contact portion (CTP2-2), a 2-2 bridge electrode (BRE2-2) may be further arranged.
[0415] In one embodiment, the second-second bonding electrode (BDE2-2) may be normally electrically connected to the second-second reflective electrode (RFE2-2) which is in electrical contact with the second-second contact portion (CTP2-2). For example, in a process of arranging a light-emitting element (LDc) on a pixel circuit layer (PCL), the second-second bonding electrode (BDE2-2) may be electrically connected to the second-second contact portion (CTP2-2). The second-second bridge electrode (BRE2-2) may be omitted.
[0416] In one embodiment, the second-second bonding electrode (BDE2-2) may not be normally electrically connected to the second-second reflective electrode (RFE2-2) that is in electrical contact with the second-second contact portion (CTP2-2). For example, in a process of arranging a light-emitting element (LDc) on a pixel circuit layer (PCL), the second-second bonding electrode (BDE2-2) may not be electrically connected to the second-second contact portion (CTP2-2). If a connection failure is sensed through a subsequent light-emitting inspection process or the like, a second-second bridge electrode (BRE2-2) may be arranged to electrically connect the second-second bonding electrode (BDE2-2) and the second-second contact portion (CTP2-2).
[0417] The second-second bridge electrode (BRE2-2) may be arranged along the side surface of the second-second protrusion (PRT2-2) of the second-second bonding electrode (BDE2-2). The second-second bridge electrode (BRE2-2) may extend from the side surface of the second-second protrusion (PRT2-2) and may contact the second-second reflective electrode (RFE2-2) which electrically contacts the second-second contact portion (CTP2-2). Accordingly, the second-second bonding electrode (BDE2-2) may be electrically connected to the second-second contact portion (CTP2-2) via the second-second bridge electrode (BRE2-2).
[0418] In the embodiments, the planar surface area of the second-second contact portion (CTP2-2) may be sufficiently larger than the planar surface area of the second-second bonding electrode (BDE2-2), and further, the second-second bonding electrode (BDE2-2) may completely overlap a portion of the second-second contact portion (CTP2-2) on the planar surface. Accordingly, a sufficient space may be secured in which the second-second bridge electrode (BRE2-2) may be arranged.
[0419] As described above with reference to FIGS. 30 to 37, the light emitting element (LDc) of the present disclosure may have a relatively small distance between bonding electrodes electrically connected to different semiconductor layers, and thus may have excellent light emitting efficiency. Even if a connection failure occurs in the process of arranging the light emitting element (LDc) on the pixel circuit layer (PCL), the above-described connection failure can be easily repaired using the bridge electrodes (BRE1-1, BRE1-2, BRE2-1, BRE2-2) without the need for a removal process for removing the light emitting element (LDc).
[0420] Figure 38 is a schematic block diagram illustrating a display system according to one embodiment.
[0421] Referring to FIG. 38, the display system (1000) may include a processor (1100) and a display device (1200).
[0422] The processor (1100) can perform various tasks and calculations. In embodiments, the processor (1100) may include an application processor, a graphics processor, a microprocessor, a central processing unit (CPU), etc. The processor (1100) can be electrically connected to other components of the display system (1000) via a bus system and control them.
[0423] The processor (1100) can transmit image data (IMG) and a control signal (CTRL) to the display device (1200). The display device (1200) can display an image based on the image data (IMG) and the control signal (CTRL). The display device (1200) can be configured similarly to the display device (DD) described with reference to FIG. 1. The image data (IMG) and the control signal (CTRL) can be provided as the input image data (IMG) and the control signal (CTRL) of FIG. 1, respectively.
[0424] The display system (1000) may include a computing system that provides an image display function, such as a smart watch, a mobile phone, a smart phone, a portable computer, a tablet personal computer, a watch phone, an automotive display, smart glasses, a portable multimedia player (PMP), a navigation system, an ultra mobile personal computer (UMPC), etc. The display system (1000) may include at least one of a head mounted display (HMD), a virtual reality (VR) device, a mixed reality (MR) device, and an augmented reality (AR) device.
[0425] Figures 39 to 42 are perspective views illustrating application examples of the display system of Figure 38.
[0426] Referring to FIG. 39, the display system (1000) of FIG. 38 can be applied to a smart watch (2000) including a display unit (2100) and a strap unit (2200).
[0427] The smartwatch (2000) may be a wearable electronic device. For example, the smartwatch (2000) may have a structure in which a strap portion (2200) is attached to the user's wrist. Here, a display system (1000) and / or a display device (1200) may be applied to the display portion (2100), so that image data including time information may be provided to the user.
[0428] Referring to FIG. 40, the display system (1000) of FIG. 38 may be applied to an automotive display system (3000). Here, the automotive display system (3000) may include a computing system provided inside and / or outside a vehicle to provide image data.
[0429] For example, the display system (1000) and / or the display device (1200) may be applied to at least one of an infotainment panel (3100), a cluster (3200), a co-driver display (3300), a head-up display (3400), a side mirror display (3500), and a rear seat display provided in a vehicle.
[0430] Referring to FIG. 41, the display system (1000) of FIG. 38 can be applied to smart glasses (4000). The smart glasses (4000) may be a wearable electronic device that can be worn on a user's head. For example, the smart glasses (4000) may be a wearable device for augmented reality.
[0431] Smart glasses (4000) may include a frame (4100) and a lens unit (4200). The frame (4100) may include a housing (4110) that supports the lens unit (4200) and a leg unit (4120) for a user to wear. The leg unit (4120) is connected to the housing (4110) via a hinge and may be folded or unfolded relative to the housing (4110).
[0432] The frame (4100) may include a battery, a touch pad, a microphone, a camera, etc. The frame (4100) may include a projector that outputs light, a processor that controls light signals, etc.
[0433] The lens unit (4200) may include an optical member that transmits or reflects light. For example, the lens unit (4200) may include glass, transparent synthetic resin, or the like.
[0434] In order for the user's eyes to recognize visual information, the lens unit (4200) can reflect an image by an optical signal transmitted from the projector of the frame (4100) onto the rear surface of the lens unit (4200) (e.g., the surface facing the user's eyes). For example, the user can recognize visual information such as the time and date displayed on the lens unit (4200). At this time, the projector and / or the lens unit (4200) may be a type of display device. The display device (1200) may be applied to the projector and / or the lens unit (4200).
[0435] Referring to FIG. 42, the display system (1000) of FIG. 38 can be applied to a head-mounted display device (5000).
[0436] The head-mounted display device (5000) may be a wearable electronic device that can be worn on a user's head. For example, the head-mounted display device (5000) may be a wearable device for virtual reality or mixed reality.
[0437] A head-mounted display device (5000) may include a head-mounted band (5100) and a display device storage case (5200). The head-mounted band (5100) may be connected to the display device storage case (5200). The head-mounted band (5100) may include horizontal bands and / or vertical bands for securing the head-mounted display device (5000) to a user's head. The horizontal band may be configured to surround the side of the user's head, and the vertical band may be configured to surround the upper portion of the user's head. However, embodiments are not limited thereto. For example, the head-mounted band (5100) may be implemented in the form of eyeglass frames, helmets, etc.
[0438] The display device storage case (5200) can store the display system (1000) and / or the display device (1200).
[0439] Although the present disclosure has been described with reference to the above embodiments, it will be understood by those skilled in the art that various modifications and changes can be made to the present disclosure without departing from the spirit and scope of the present disclosure as set forth in the claims below.
Claims
1. A light-emitting laminate comprising a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer; A first bonding electrode electrically connected to the lower surface of the first semiconductor layer and including a first protrusion protruding in at least one direction among a first direction and a direction opposite to the first direction so as not to overlap with the light-emitting laminate on a plane; A second-1 bonding electrode electrically connected to the second semiconductor layer; and A second-second bonding electrode electrically connected to the second semiconductor layer and spaced apart from the second-first bonding electrode in a second direction intersecting the first direction, A light emitting element wherein the first bonding electrode is disposed between the second-first bonding electrode and the second-second bonding electrode.
2. In paragraph 1, On the opposite surface of the second semiconductor layer facing the outer surface of the active layer, first and second exposed surfaces that do not overlap on a plane with the first semiconductor layer and the active layer are defined, The above 2-1 bonding electrode is electrically connected to the first exposed surface, The above 2-2 bonding electrode is a light emitting element electrically connected to the second exposed surface.
3. In paragraph 2, The first exposed surface is adjacent to one side of the second semiconductor layer, A light emitting element, wherein the second exposed surface is adjacent to the other side opposite to the second direction with respect to the one side of the second semiconductor layer.
4. In paragraph 1, A light-emitting element, wherein the second-1 bonding electrode includes a second-1 protrusion that protrudes in a direction opposite to the second direction so as not to overlap with the light-emitting laminate on a plane.
5. In paragraph 4, A light-emitting element, wherein the second-second bonding electrode includes a second-second protrusion that protrudes in the second direction so as not to overlap with the light-emitting laminate on a plane.
6. In paragraph 1, A light-emitting element further comprising a reflective layer surrounding at least a portion of a side surface of the light-emitting layer.
7. In paragraph 6, A light emitting element, wherein the reflective layer is in contact with each of the second-first bonding electrode and the second-second bonding electrode.
8. In paragraph 7, A light-emitting element, wherein the reflective layer comprises a conductive material.
9. In paragraph 8, A light emitting element, wherein the reflective layer and the first bonding electrode are spaced apart from each other.
10. In paragraph 1, A light-emitting element further comprising an insulating film surrounding at least a portion of the outer surface of the light-emitting laminate.
11. In paragraph 10, A light emitting device, wherein the insulating film is disposed between the 2-1 bonding electrode and the first semiconductor layer, between the 2-1 bonding electrode and the active layer, between the 2-2 bonding electrode and the first semiconductor layer, and between the 2-2 bonding electrode and the active layer.
12. In paragraph 1, A light emitting element, wherein the first bonding electrode includes a first-first bonding electrode and a first-second bonding electrode spaced apart from the first-first bonding electrode in the second direction.
13. A light-emitting laminate comprising a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer; A first-first bonding electrode electrically connected to the lower surface of the first semiconductor layer; A first-second bonding electrode electrically connected to the lower surface of the first semiconductor layer and spaced apart from the first-first bonding electrode in the first direction; and A second bonding electrode is electrically connected to the second semiconductor layer and includes a protrusion that protrudes in at least one direction among a second direction intersecting the first direction and a direction opposite to the second direction so as not to overlap with the light-emitting laminate on a plane, A light emitting element wherein the second bonding electrode is disposed between the first-first bonding electrode and the first-second bonding electrode.
14. In paragraph 13, The above 1-1 bonding electrode is adjacent to one side of the first semiconductor layer, A light emitting element wherein the first-second bonding electrode is adjacent to the other side opposite to the first side of the first semiconductor layer in the first direction.
15. In paragraph 13, A light-emitting element, wherein the first-first bonding electrode includes a first-first protrusion that protrudes in a direction opposite to the first direction so as not to overlap with the light-emitting laminate on a plane.
16. In paragraph 15, A light-emitting element, wherein the first-second bonding electrode includes a first-second protrusion that protrudes in the first direction so as not to overlap with the light-emitting laminate on a plane.
17. In paragraph 13, A light emitting element, wherein the second bonding electrode comprises a 2-1 bonding electrode and a 2-2 bonding electrode spaced apart from the 2-1 bonding electrode in the first direction.
18. In paragraph 17, On the opposite surface of the second semiconductor layer facing the outer surface of the active layer, first and second exposed surfaces that do not overlap on a plane with the first semiconductor layer and the active layer are defined, The above 2-1 bonding electrode is electrically connected to the first exposed surface, The above 2-2 bonding electrode is a light emitting element electrically connected to the second exposed surface.
19. In paragraph 13, A light-emitting element further comprising a reflective layer surrounding at least a portion of a side surface of the light-emitting layer.
20. In paragraph 13, A light-emitting element further comprising an insulating film surrounding at least a portion of the outer surface of the light-emitting laminate.
21. An electrode layer including an anode electrode including a first contact portion, and a cathode electrode including a second-first contact portion and a second-second contact portion; a pixel circuit layer disposed below the electrode layer and including a sub-pixel circuit electrically connected to the anode electrode; and including a light emitting element disposed on the electrode layer, The above light emitting element, A light-emitting laminate comprising a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer; A first bonding electrode disposed on the first contact portion and electrically connected to a lower surface of the first semiconductor layer, the first bonding electrode including a first protrusion protruding in at least one direction among a first direction and a direction opposite to the first direction so as not to overlap with the light-emitting laminate in a plane; A second-1 bonding electrode electrically connected to the second semiconductor layer and disposed on the second-1 contact portion; and A second-second bonding electrode electrically connected to the second semiconductor layer, spaced apart from the second-first bonding electrode in a second direction intersecting the first direction, and disposed on the second-second contact portion, A display device, wherein the first bonding electrode is disposed between the second-first bonding electrode and the second-second bonding electrode.
22. In paragraph 21, A display device, wherein the first bonding electrode is electrically connected to the first contact portion through a first bridge electrode that is electrically connected to each of the first protrusion portion and the first contact portion.
23. In paragraph 21, The above 2-1 bonding electrode includes a 2-1 protrusion that protrudes in a direction opposite to the second direction so as not to overlap with the light-emitting laminate on a plane, A display device in which the above-mentioned 2-1 bonding electrode is electrically connected to the 2-1 contact portion through a 2-1 bridge electrode that is electrically connected to each of the 2-1 protrusion portion and the 2-1 contact portion.
24. In paragraph 23, The above 2-2 bonding electrode includes a 2-2 protrusion that protrudes in the second direction so as not to overlap with the light-emitting laminate on a plane, A display device in which the above-mentioned 2-2 bonding electrode is electrically connected to the 2-2 contact portion through a 2-2 bridge electrode that is electrically connected to each of the 2-2 protrusion portion and the 2-2 contact portion.
25. In paragraph 21, The above first bonding electrode overlaps a portion of the above first contact portion in a plane, The above 2-1 bonding electrode overlaps a part of the above 2-1 contact portion in a plane, A display device in which the above-mentioned 2-2 bonding electrode overlaps a portion of the above-mentioned 2-2 contact portion in a plane.
Citation Information
Patent Citations
Semiconductor Devices
JP2022180417A
Light emitting device
KR1020150007482A
Method for monitoring disease state companion animal using FMCW radar
KR1020240068443A
A Rotary type debris removal apparatus
KR102221382B1
High density pixelated LED and devices and methods thereof
US20210074687A1