Semiconductor device

Abstract

A semiconductor device A1 comprises a first semiconductor element 9A, a second semiconductor element 9B, a first conduction member 1, a second conduction member 2, a third conduction member 3, a fourth conduction member 4, and a sealing resin 8. The first semiconductor element 9A includes a first electrode 91, a second electrode 92, and a third electrode 93. The second semiconductor element 9B includes a fourth electrode 94, a fifth electrode 95, and a sixth electrode 96. A third terminal 31 is electrically connected to the first electrode 91 and the fourth electrode 94. A fourth terminal 41 is electrically connected to the second electrode 92 and the fifth electrode 95. A first terminal 11 is electrically connected to the third electrode 93 and insulated from the sixth electrode 96. A second terminal 21 is electrically connected to the sixth electrode 96 and insulated from the third electrode 93. As a result of this configuration, the first semiconductor element 9A and the second semiconductor element 9B can be caused to function more appropriately.

Description

Semiconductor Devices

[0001] The present disclosure relates to semiconductor devices.

[0002] Patent Document 1 discloses an example of a conventional semiconductor device. The semiconductor device disclosed in this document includes a semiconductor element, a first lead, a second lead, a third lead, and a sealing resin. The first lead is electrically connected to a drain electrode of the semiconductor element. The second lead is electrically connected to a gate electrode of the semiconductor element. The third lead is electrically connected to a source electrode of the semiconductor element. The first lead, second lead, and third lead protrude from the sealing resin.

[0003] Japanese Patent Application Laid-Open No. 2017-174951

[0004] [Summary] There are cases where a semiconductor device including a plurality of semiconductor elements is desired.

[0005] The present disclosure has been made in light of the above circumstances, and an object of the present disclosure is to provide a semiconductor device that allows a plurality of semiconductor elements to function more appropriately.

[0006] A semiconductor device provided by the present disclosure comprises a first semiconductor element, a second semiconductor element, a first conductive member having a first terminal, a second conductive member having a second terminal, a third conductive member having a third terminal, a fourth conductive member having a fourth terminal, and a sealing resin covering the first semiconductor element and the second semiconductor element, wherein the first semiconductor element has a first electrode and a second electrode, and a third electrode for controlling conduction and insulation between the first electrode and the second electrode, the second semiconductor element has a fourth electrode and a fifth electrode, and a sixth electrode for controlling conduction and insulation between the fourth electrode and the fifth electrode, the third terminal is conductive to the first electrode and the fourth electrode, the fourth terminal is conductive to the second electrode and the fifth electrode, the first terminal is conductive to the third electrode and insulated from the sixth electrode, and the second terminal is conductive to the sixth electrode and insulated from the third electrode.

[0007] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings.

[0008] FIG. 1 is a perspective view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 2 is a partial perspective view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 3 is a plan view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 4 is a partial plan view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 5 is a bottom view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 6 is a cross-sectional view taken along line VI-VI in FIG. 4. FIG. 7 is a cross-sectional view taken along line VII-VII in FIG. 4. FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. 4. FIG. 9 is a circuit diagram showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 10 is a partial plan view showing a first modified example of the semiconductor device according to the first embodiment of the present disclosure. FIG. 11 is a circuit diagram showing a semiconductor device according to a second embodiment of the present disclosure. FIG. 12 is a circuit diagram showing a semiconductor device according to a third embodiment of the present disclosure. FIG. 13 is a partial perspective view showing a semiconductor device according to a fourth embodiment of the present disclosure. FIG. 14 is a partial plan view showing a semiconductor device according to a fourth embodiment of the present disclosure. FIG. 15 is a circuit diagram showing a semiconductor device according to a fourth embodiment of the present disclosure. FIG. 16 is a partial plan view showing a first modified example of the semiconductor device according to the fourth embodiment of the present disclosure. FIG. 17 is a perspective view showing a semiconductor device according to the fifth embodiment of the present disclosure. FIG. 18 is a partial perspective view showing a semiconductor device according to the fifth embodiment of the present disclosure. FIG. 19 is a partial plan view showing a semiconductor device according to the fifth embodiment of the present disclosure. FIG. 20 is a bottom view showing a semiconductor device according to the fifth embodiment of the present disclosure. FIG. 21 is a cross-sectional view taken along line XXI-XXI in FIG. 19. FIG. 22 is a partial plan view showing a semiconductor device according to the sixth embodiment of the present disclosure. FIG. 23 is a partial plan view showing a first modified example of the semiconductor device according to the sixth embodiment of the present disclosure. FIG. 24 is a partial plan view showing a second modified example of the semiconductor device according to the sixth embodiment of the present disclosure. FIG. 25 is a perspective view showing a semiconductor device according to the seventh embodiment of the present disclosure. FIG. 26 is a partial perspective view showing a semiconductor device according to the seventh embodiment of the present disclosure. FIG. 27 is a partial perspective view showing a semiconductor device according to the seventh embodiment of the present disclosure. FIG. 28 is a partial plan view showing a semiconductor device according to the seventh embodiment of the present disclosure. FIG. 29 is a partial plan view showing a semiconductor device according to the seventh embodiment of the present disclosure.Fig. 30 is a bottom view showing a semiconductor device according to a seventh embodiment of the present disclosure. Fig. 31 is a cross-sectional view taken along line XXXI-XXXI in Fig. 28. Fig. 32 is a cross-sectional view taken along line XXXII-XXXII in Fig. 28.

[0009] DETAILED DESCRIPTION Preferred embodiments of the present disclosure will now be described in detail with reference to the drawings.

[0010] The terms "first," "second," "third," etc. in this disclosure are used for identification purposes only and are not intended to impose any ranking on their objects.

[0011] In this disclosure, unless otherwise specified, "a certain object A is formed on a certain object B" and "a certain object A is formed on a certain object B" include "a certain object A is formed directly on a certain object B" and "a certain object A is formed on a certain object B with another object interposed between the certain object A and the certain object B." Similarly, "a certain object A is disposed on a certain object B" and "a certain object A is disposed on a certain object B" include "a certain object A is disposed directly on a certain object B" and "a certain object A is disposed on a certain object B with another object interposed between the certain object A and the certain object B" unless otherwise specified. Similarly, "a certain object A is located on a certain object B" includes "a certain object A is located on a certain object B with a certain object A in contact with the certain object B" and "a certain object A is located on a certain object B with another object interposed between the certain object A and the certain object B." Furthermore, unless otherwise specified, the phrase "an object A overlaps an object B when viewed in a certain direction" includes "an object A overlaps the entire object B" and "an object A overlaps a part of an object B." Furthermore, in the present disclosure, "a surface A faces in (one side or the other side of) direction B" is not limited to the case where the angle of surface A with respect to direction B is 90°, but also includes the case where surface A is tilted with respect to direction B.

[0012] 1 to 9 show a semiconductor device according to a first embodiment of the present disclosure. The semiconductor device A1 of this embodiment includes a first semiconductor element 9A, a second semiconductor element 9B, a first conductive member 1, a second conductive member 2, a third conductive member 3, a fourth conductive member 4, and a sealing resin 8.

[0013] In these figures, one side of the first direction x is defined as the first side x1, and the other side is defined as the second side x2. One side of the second direction y, which is perpendicular to the first direction x, is defined as the first side y1, and the other side is defined as the second side y2. One side of the third direction z, which is perpendicular to the first direction x and the second direction y, is defined as the first side z1, and the other side is defined as the second side z2.

[0014] The first semiconductor element 9A may be, for example, a bipolar transistor. The first semiconductor element 9A may be an insulated gate bipolar transistor (IGBT) or a Si-IGBT. The first semiconductor element 9A may also be a bipolar junction transistor (BJT). In the following description, unless otherwise specified, the first semiconductor element 9A will be described as an example in which the first semiconductor element 9A is a Si-IGBT. The Si-IGBT has a semiconductor layer containing Si as a component. The first semiconductor element 9A may have a first electrode 91, a second electrode 92, and a third electrode 93.

[0015] The first electrode 91 may be a collector electrode. The first electrode 91 may be located on a second side z2 in the third direction z of the first semiconductor element 9A. The second electrode 92 may be an emitter electrode. The second electrode 92 may be located on a first side z1 in the third direction z of the first semiconductor element 9A. The third electrode 93 may be a gate electrode. The third electrode 93 may be located on a first side z1 in the third direction z of the first semiconductor element 9A. The third electrode 93 may be smaller than the second electrode 92 when viewed in the third direction z. The third electrode 93 may be located on a first side x1 in the first direction x with respect to the second electrode 92.

[0016] The second semiconductor element 9B may be, for example, a unipolar n-type transistor. The second semiconductor element 9B may be a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) or a SiC-MOSFET. In the following description, unless otherwise specified, the second semiconductor element 9B will be described as an example in which the second semiconductor element 9B is a SiC-MOSFET. The SiC-MOSFET has a semiconductor layer containing SiC as a component. The second semiconductor element 9B may have a fourth electrode 94, a fifth electrode 95, and a sixth electrode 96.

[0017] The fourth electrode 94 may be a drain electrode. The fourth electrode 94 may be located on a second side z2 in the third direction z of the second semiconductor element 9B. The fifth electrode 95 may be a source electrode. The fifth electrode 95 may be located on a first side z1 in the third direction z of the second semiconductor element 9B. The sixth electrode 96 may be a gate electrode. The sixth electrode 96 may be located on a first side z1 in the third direction z of the second semiconductor element 9B. The sixth electrode 96 may be smaller than the fifth electrode 95 when viewed in the third direction z. The sixth electrode 96 may be located on a first side x1 in the first direction x with respect to the fifth electrode 95. The second semiconductor element 9B may be located on a first side x1 in the first direction x with respect to the first semiconductor element 9A.

[0018] When the first semiconductor element 9A is a Si-IGBT and the second semiconductor element 9B is a SiC-MOSFET, the second semiconductor element 9B may tend to have a faster switching speed than the first semiconductor element 9A. The first semiconductor element 9A may tend to have a smaller conduction loss than the second semiconductor element 9B when a large current is passed through it. In the illustrated example, the second semiconductor element 9B may be smaller than the first semiconductor element 9A when viewed in the third direction z.

[0019] The sealing resin 8 covers the first semiconductor element 9A and the second semiconductor element 9B. The sealing resin 8 contains an insulating material such as an epoxy resin. The specific configuration of the sealing resin 8 is not limited in any way, and the sealing resin 8 may have, for example, a first resin surface 81, a second resin surface 82, a third resin surface 83, a fourth resin surface 84, a fifth resin surface 85, and a sixth resin surface 86.

[0020] The resin first surface 81 is a surface facing a first side z1 in the third direction z. The resin second surface 82 is a surface facing a second side z2 in the third direction z. The resin third surface 83 is a surface facing a first side x1 in the first direction x. The resin fourth surface 84 is a surface facing a second side x2 in the first direction x. The resin fifth surface 85 is a surface facing a first side y1 in the second direction y. The resin sixth surface 86 is a surface facing a second side y2 in the second direction y. The resin first surface 81, the resin second surface 82, the resin third surface 83, the resin fourth surface 84, the resin fifth surface 85, and the resin sixth surface 86 may be surfaces of various shapes, such as flat surfaces, curved surfaces, or bent surfaces.

[0021] In the illustrated example, the sealing resin 8 may have a through hole 801, two recesses 802, and a recess 803. The through hole 801 penetrates the sealing resin 8 in the third direction z and opens to the resin first surface 81 and the resin second surface 82. The two recesses are located on opposite sides in the first direction x. The recess 802 is recessed from the resin first surface 81 toward the second side z2 in the third direction z. The recess 802 located on the first side x1 in the first direction x is recessed from the resin third surface 83 toward the second side x2 in the first direction x. The recess 802 located on the second side x2 in the first direction x is recessed from the resin fourth surface 84 toward the first side x1 in the first direction x. The recess 803 is recessed from the resin sixth surface 86 toward the first side y1 in the second direction y. The recess 803 opens to the resin first surface 81 and the resin second surface 82.

[0022] The first conductive member 1 includes a conductive material. The conductive material may include, for example, a metal such as Cu (copper), Ni (nickel), or Fe (iron), or an alloy thereof. A surface layer (not shown) including a metal such as Ag (silver) may be provided at an appropriate location on the surface of the first conductive member 1.

[0023] The first conductive member 1 may have a first terminal 11 and a first pad 12. The first terminal 11 may be exposed to the outside of the sealing resin 8 and may protrude from the resin sixth surface 86 to the second side y2 in the second direction y. The first terminal 11 may extend along the second direction y. The first pad 12 is covered with the sealing resin 8.

[0024] The first pad 12 is connected to the third electrode 93 via the wire 71. This allows the first terminal 11 to function as a gate terminal of the first semiconductor element 9A.

[0025] The second conductive member 2 includes a conductive material. The conductive material may include, for example, a metal such as Cu (copper), Ni (nickel), or Fe (iron) or an alloy thereof. A surface layer (not shown) including a metal such as Ag (silver) may be provided at an appropriate location on the surface of the second conductive member 2. In the illustrated example, the second conductive member 2 may be located on a first side x1 in the first direction x with respect to the first conductive member 1.

[0026] The second conductive member 2 may have a second terminal 21 and a second pad 22. The second terminal 21 may be exposed to the outside of the sealing resin 8 and may protrude from the resin sixth surface 86 to the second side y2 in the second direction y. The second terminal 21 may extend along the second direction y. The second pad 22 is covered with the sealing resin 8.

[0027] The second pad 22 is connected to the sixth electrode 96 via the wire 72. This allows the second terminal 21 to function as the gate terminal of the second semiconductor element 9B.

[0028] The third conductive member 3 includes a conductive material. The conductive material may include, for example, a metal such as Cu (copper), Ni (nickel), or Fe (iron), or an alloy thereof. A surface layer (not shown) including a metal such as Ag (silver) may be provided at an appropriate location on the surface of the third conductive member 3.

[0029] The third conductive member 3 may have a third terminal 31 and an island portion 30. The third terminal 31 may be exposed to the outside of the sealing resin 8 and may protrude from the resin sixth surface 86 to a second side y2 in the second direction y. The third terminal 31 may extend along the second direction y. In the illustrated example, the third terminal 31 may be located on a second side x2 in the first direction x with respect to the first terminal 11.

[0030] The island portion 30 is covered with the sealing resin 8. When viewed in the third direction z, the island portion 30 may be larger than the first terminal 11 and the first pad 12. The island portion 30 may be exposed from the second resin surface 82 to a second side z2 in the third direction z. The island portion 30 may be located on a first side y1 in the second direction y relative to the first pad 12 and the second pad 22.

[0031] The specific configuration of the island portion 30 is not limited in any way, and the island portion 30 may have a through hole 301. The through hole 301 may penetrate the island portion 30 in the third direction z. When viewed in the third direction z, a through hole 801 may be located inside the through hole 301. The island portion 30 may be exposed from the recess 802.

[0032] A first semiconductor element 9A and a second semiconductor element 9B may be mounted on the island portion 30. A first electrode 91 may be conductively joined to the island portion 30 via a conductive bonding material 99. The conductive bonding material 99 may be, for example, solder, silver paste, or the like. A fourth electrode 94 may be conductively joined to the island portion 30 via the conductive bonding material 99. In the illustrated example, the first semiconductor element 9A and the second semiconductor element 9B may be aligned in the first direction x on the island portion 30. The first semiconductor element 9A may be located on a second side x2 in the first direction x with respect to the second semiconductor element 9B.

[0033] The fourth conductive member 4 includes a conductive material. The conductive material may include, for example, a metal such as Cu (copper), Ni (nickel), or Fe (iron) or an alloy thereof. A surface layer (not shown) including a metal such as Ag (silver) may be provided at an appropriate location on the surface of the fourth conductive member 4. In the illustrated example, the fourth conductive member 4 may be located between the first conductive member 1 and the third terminal 31 in the first direction x.

[0034] The fourth conductive member 4 may have a fourth terminal 41 and a fourth pad portion 42. The fourth terminal 41 may be exposed to the outside of the sealing resin 8 and may protrude from the resin sixth surface 86 to the second side y2 in the second direction y. The fourth terminal 41 may extend along the second direction y. The fourth pad portion 42 is covered by the sealing resin 8. In the illustrated example, the fourth pad portion 42 may be larger than the first pad 12 and the second pad 22.

[0035] The fourth pad portion 42 is connected to the second electrode 92 via a wire 73. The fourth pad portion 42 is also connected to the fifth electrode 95 via a wire 74. This allows the second terminal 21 to function as the emitter terminal of the first semiconductor element 9A and the source electrode of the second semiconductor element 9B. In the illustrated example, the wire 74 can intersect with the wire 71 when viewed in the third direction z.

[0036] 9 , the first semiconductor element 9A and the second semiconductor element 9B are connected in parallel to each other. The third terminal 31 is electrically connected to the first electrode 91 and the fourth electrode 94. The fourth terminal 41 is electrically connected to the second electrode 92 and the fifth electrode 95. The first terminal 11 is electrically connected to the third electrode 93 and is insulated from the sixth electrode 96. The second terminal 21 is electrically connected to the sixth electrode 96 and is insulated from the third electrode 93. In the illustrated example, the second semiconductor element 9B may include a body diode 902. The forward direction of the body diode 902 is from the fourth terminal 41 to the third terminal 31.

[0037] Next, the operation of the semiconductor device A1 will be described.

[0038] The first terminal 11 is electrically connected to the third electrode 93 and insulated from the sixth electrode 96, and the second terminal 21 is electrically connected to the sixth electrode 96 and insulated from the third electrode 93. This makes it possible to individually control the switching operations of the first semiconductor element 9A and the second semiconductor element 9B using the third electrode 93 and the sixth electrode 96. This allows the multiple first semiconductor elements 9A and second semiconductor elements 9B to function more appropriately.

[0039] When the first semiconductor element 9A is a Si-IGBT and the second semiconductor element 9B is a SiC-MOSFET, the first semiconductor element 9A has an advantage of lower conduction loss than the second semiconductor element 9B when a large current is passed through it, and the second semiconductor element 9B has an advantage of faster switching operation than the first semiconductor element 9A. For example, drive control is possible such that, when switching ON, the second semiconductor element 9B is switched ON faster than the first semiconductor element 9A, and when switching OFF, the first semiconductor element 9A is switched OFF faster than the second semiconductor element 9B. This makes it possible to speed up the switching operation of the semiconductor device A1 when switching ON and reduce conduction loss when a large current is passed through it.

[0040] 10 to 32 show modified examples and other embodiments of the present disclosure. In these figures, elements that are the same as or similar to those in the above-described embodiment are given the same reference numerals. Furthermore, the configurations of the various parts in each modified example and each embodiment can be combined with each other as appropriate within the scope of not causing technical contradictions.

[0041] 10 shows a first modified example of the semiconductor device A1. In the semiconductor device A11 of this modified example, the third electrode 93 may be located on the second side x2 in the first direction x with respect to the second electrode 92.

[0042] The second terminal 21 may be located on a first side x1 in the first direction x with respect to the first terminal 11. The third terminal 31 may be located between the first terminal 11 and the second terminal 21 in the first direction x. The fourth terminal 41 may be located between the first terminal 11 and the third terminal 31 in the first direction x. In this modification, the wire 71 and the wire 74 do not need to intersect when viewed in the third direction z.

[0043] According to this modification, the plurality of first semiconductor elements 9A and second semiconductor elements 9B can function more appropriately. Furthermore, when viewed in the third direction z, if the wires 71 and 74 do not cross each other, the manufacturing of the semiconductor device A11 becomes easier and the wires 71 and 74 can be more reliably insulated from each other.

[0044] 11 shows a semiconductor device according to a second embodiment of the present disclosure. A semiconductor device A2 according to this embodiment differs from the above-described embodiments in the configuration of a first semiconductor element 9A.

[0045] The first semiconductor element 9A of this embodiment includes a diode 901. The forward direction of the diode 901 is from the fourth terminal 41 to the third terminal 31. The first semiconductor element 9A of this embodiment may be an RC-IGBT (reverse conducting insulated gate bipolar transistor). The first semiconductor element 9A may have a configuration in which the functional portion of the IGBT and the diode 901 are integrated into a first body portion 90A containing, for example, Si.

[0046] According to this embodiment, the plurality of first semiconductor elements 9A and second semiconductor elements 9B can function more appropriately. Furthermore, since the first semiconductor element 9A includes the diode 901, the first semiconductor element 9A can be protected from a large reverse current. Furthermore, compared to the case where a separate diode is provided, space can be saved.

[0047] 12 shows a semiconductor device according to a third embodiment of the present disclosure. A semiconductor device A3 of this embodiment differs from the above-described embodiments in the configuration of a second semiconductor element 9B.

[0048] The second semiconductor element 9B of the present embodiment further includes a Schott Barrier key diode 903. The forward direction of the Schott Barrier key diode 903 is the direction from the fourth terminal 41 toward the third terminal 31. The second semiconductor element 9B may have a configuration in which the functional portion of a MOSFET and the Schott Barrier key diode 903 are integrated into a second body portion 90B containing, for example, SiC.

[0049] According to this embodiment, the plurality of first semiconductor elements 9A and second semiconductor elements 9B can function more appropriately. Furthermore, since the second semiconductor element 9B includes the Schottky barrier diode 903, the second semiconductor element 9B can be more reliably protected from a large reverse current. Furthermore, compared to the case where a separate diode is provided, space can be saved.

[0050] 13 to 15 show a semiconductor device according to a fourth embodiment of the present disclosure. The semiconductor device A4 of this embodiment further includes a diode element 9C.

[0051] The diode element 9C is a diode whose forward direction is from the fourth terminal 41 to the third terminal 31, and is configured as an electronic element separate from the first semiconductor element 9A and the second semiconductor element 9B. The diode element 9C may be, for example, a Si-FRD (Fast Recovery Diode), a SiC-SBD (Schottky Barrier Diode), or the like.

[0052] The diode element 9C may be mounted on, for example, the island portion 30. The diode element 9C may be located between the first semiconductor element 9A and the second semiconductor element 9B in the first direction x. The cathode electrode of the diode element 9C may be conductively joined to the island portion 30. The anode electrode of the diode element 9C may be connected to the fourth pad portion 42 via a wire 75.

[0053] The second terminal 21 may be located on a first side x1 in the first direction x with respect to the first terminal 11. The third terminal 31 may be located on a second side x2 in the first direction x with respect to the first terminal 11. The fourth terminal 41 may be located between the first terminal 11 and the third terminal 31 in the first direction x. When viewed in the third direction z, the wire 71, the wire 73, and the wire 75 may cross each other.

[0054] According to this embodiment, the plurality of first semiconductor elements 9A and second semiconductor elements 9B can function more appropriately. By providing the diode element 9C, it is possible to appropriately select the diode element 9C with specifications suitable for electrically protecting the first semiconductor element 9A and the second semiconductor element 9B.

[0055] 16 shows a first modified example of the semiconductor device A4. In the semiconductor device A41 of this modified example, the third electrode 93 may be located on the second side x2 in the first direction x with respect to the second electrode 92.

[0056] The second terminal 21 may be located on a first side x1 in the first direction x with respect to the first terminal 11. The third terminal 31 may be located between the first terminal 11 and the second terminal 21 in the first direction x. The fourth terminal 41 may be located between the first terminal 11 and the third terminal 31 in the first direction x. In this modification, the wire 71, the wire 73, and the wire 75 do not need to intersect with each other when viewed in the third direction z.

[0057] According to this modification, the plurality of first semiconductor elements 9A and second semiconductor elements 9B can function more appropriately. Furthermore, when viewed in the third direction z, if the wire 71 does not intersect with the wire 73 and the wire 75, the manufacturing of the semiconductor device A41 becomes easier, and the wire 71 can be more reliably insulated from the wire 73 and the wire 75.

[0058] 17 to 21 show a semiconductor device according to a fifth embodiment of the present disclosure.

[0059] The third conductive member 3 may have an island portion 30, a third terminal 31, and a connecting portion 32. The connecting portion 32 may be connected to the island portion 30 and extend to a first side y1 in the second direction y relative to the island portion 30. The connecting portion 32 may protrude from a fifth resin surface 85 of the sealing resin 8 to the first side y1 in the second direction y.

[0060] The third terminal 31 may be configured by the surfaces of the island portion 30 and the connection portion 32 facing the second side z2 in the third direction z.

[0061] The fourth conductive member 4 may include a plurality of fourth terminals 41. The plurality of fourth terminals 41 are aligned in the first direction x. The first terminal 11, the first pad 12, and the plurality of fourth terminals 41 may have a curved shape when viewed in the first direction x.

[0062] According to this embodiment, the plurality of first semiconductor elements 9A and second semiconductor elements 9B can function more appropriately. When mounting the semiconductor device A5 on a circuit board (not shown) or the like, the circuit board is positioned on the second side z2 in the third direction z relative to the semiconductor device A5. The semiconductor device A5 can be surface-mounted by utilizing the portions of the first terminal 11, the second terminal 21, and the plurality of fourth terminals 41 facing the second side z2 in the third direction z, as well as the third terminal 31.

[0063] 22 shows a semiconductor device according to a sixth embodiment of the present disclosure. The semiconductor device A6 of this embodiment differs from the semiconductor device A5 in that it further includes a diode element 9C. The diode element 9C may have a configuration similar to that of the diode element 9C of the semiconductor device A4 described above.

[0064] The semiconductor device A6 may further include a fifth conductive member 5. The fifth conductive member 5 includes a conductive material. The conductive material may include, for example, a metal such as Cu (copper), Ni (nickel), or Fe (iron) or an alloy thereof. A surface layer (not shown) including a metal such as Ag (silver) may be provided at an appropriate location on the surface of the fifth conductive member 5. In the illustrated example, the fifth conductive member 5 may be located between the first conductive member 1 and the fourth terminal 41 in the first direction x.

[0065] The fifth conductive member 5 may have a fifth terminal 51 and a fifth pad 52. The fifth terminal 51 may be exposed to the outside of the sealing resin 8 and may protrude from the resin sixth surface 86 to the second side y2 in the second direction y. The fifth terminal 51 may extend along the second direction y. The fifth pad 52 is covered with the sealing resin 8.

[0066] The fifth pad 52 is connected to the second electrode 92 via a wire 76. The fifth pad 52 is connected to the fifth electrode 95 via a wire 77. As a result, the fifth terminal 51 can function as a source sense terminal of the first semiconductor element 9A and the second semiconductor element 9B.

[0067] The second terminal 21 may be located on a second side x2 in the first direction x with respect to the first terminal 11. The plurality of fourth terminals 41 may be located on a first side x1 in the first direction x with respect to the first terminal 11. The fifth terminal 51 may be located between the first terminal 11 and the plurality of fourth terminals 41 in the first direction x. When viewed in the third direction z, the wire 71 may cross the wire 74, the wire 75, and the wire 77. When viewed in the third direction z, the wire 76 may cross the wire 74 and the wire 75.

[0068] According to this embodiment, the plurality of first semiconductor elements 9A and second semiconductor elements 9B can function more appropriately. By providing the diode element 9C, it is possible to appropriately select the diode element 9C with specifications suitable for electrically protecting the first semiconductor element 9A and the second semiconductor element 9B. By providing the fifth terminal 51, it is possible to more appropriately control the driving of the first semiconductor element 9A and the second semiconductor element 9B.

[0069] 23 shows a first modified example of the semiconductor device A6. The semiconductor device A61 of this modified example does not need to include the fifth conductive member 5, the wire 76, and the wire 77 of the semiconductor device A6. The third electrode 93 may be located on the first side x1 in the first direction x with respect to the second electrode 92.

[0070] The second terminal 21 may be located on a second side x2 in the first direction x with respect to the first terminal 11. The plurality of fourth terminals 41 may be located between the first terminal 11 and the second terminal 21 in the first direction x. When viewed in the third direction z, the wire 71, the wire 74, and the wire 75 may not intersect with each other.

[0071] According to this modification, the plurality of first semiconductor elements 9A and second semiconductor elements 9B can function more appropriately. Furthermore, when viewed in the third direction z, if the wires 71, 74, and 75 do not cross each other, the manufacturing of the semiconductor device A61 becomes easier, and the wires 71, 74, and 75 can be more reliably insulated from each other.

[0072] 24 shows a second modification of the semiconductor device A6. A semiconductor device A62 of this modification may include a fifth conductive member 5A and a fifth conductive member 5B.

[0073] The fifth conductive member 5A includes a conductive material. The conductive material may include, for example, a metal such as Cu (copper), Ni (nickel), or Fe (iron) or an alloy thereof. A surface layer (not shown) including a metal such as Ag (silver) may be provided at an appropriate location on the surface of the fifth conductive member 5A. In the illustrated example, the fifth conductive member 5A may be located between the first conductive member 1 and the fourth terminal 41 in the first direction x.

[0074] The fifth conductive member 5A may have a fifth terminal 51A and a fifth pad 52A. The fifth terminal 51A may be exposed to the outside of the sealing resin 8 and may protrude from the sixth resin surface 86 to the second side y2 in the second direction y. The fifth terminal 51A may extend along the second direction y. The fifth pad 52A is covered with the sealing resin 8.

[0075] The fifth pad 52A is connected to the second electrode 92 via a wire 76. The fifth terminal 51A can function as a source sense terminal of the first semiconductor element 9A.

[0076] The fifth conductive member 5B includes a conductive material. The conductive material may include, for example, a metal such as Cu (copper), Ni (nickel), or Fe (iron) or an alloy thereof. A surface layer (not shown) including a metal such as Bg (silver) may be provided at an appropriate location on the surface of the fifth conductive member 5B. In the illustrated example, the fifth conductive member 5B may be located between the second conductive member 2 and the fourth terminal 41 in the first direction x.

[0077] The fifth conductive member 5B may have a fifth terminal 51B and a fifth pad 52B. The fifth terminal 51B may be exposed to the outside of the sealing resin 8 and may protrude from the sixth resin surface 86 to the second side y2 in the second direction y. The fifth terminal 51B may extend along the second direction y. The fifth pad 52B is covered with the sealing resin 8.

[0078] The fifth pad 52B is connected to the fifth electrode 95 via a wire 77. The fifth terminal 51B can function as a source sense terminal of the second semiconductor element 9B.

[0079] The third electrode 93 may be located on a first side x1 in the first direction x with respect to the second electrode 92. When viewed in the third direction z, the wire 71, the wire 74, the wire 75, the wire 76, and the wire 77 may not intersect with each other.

[0080] According to this modification, the plurality of first semiconductor elements 9A and second semiconductor elements 9B can function more appropriately. Furthermore, when viewed in the third direction z, if the wires 71, 74, 75, 76, and 77 do not cross each other, the manufacturing of the semiconductor device A62 becomes easier, and the wires 71, 74, 75, 76, and 77 can be more reliably insulated from each other.

[0081] 25 to 32 show a semiconductor device according to a seventh embodiment of the present disclosure. A semiconductor device A7 according to this embodiment has a different configuration from the above-described embodiments, including the inclusion of a substrate 6.

[0082] The substrate 6 may have, for example, an insulating layer 60, a front surface metal layer 61, and a back surface metal layer 62. The substrate 6 may be, for example, a DBC (Direct Bonded Copper) substrate, an AMB (Active Metal Brazing Substrate) substrate, or the like.

[0083] The insulating layer 60 includes an insulating material such as ceramics. The front surface metal layer 61 may include a metal such as Cu (copper) and may be stacked on a first side z1 in the third direction z of the insulating layer 60. The back surface metal layer 62 may include a metal such as Cu (copper) and may be stacked on a second side z2 in the third direction z of the insulating layer 60.

[0084] The surface metal layer 61 may include a first portion 611, a second portion 612, and a third portion 613. The first portion 611 may occupy a majority of the surface metal layer 61. The second portion 612 may be smaller than the first portion 611 and may be located on a second side y2 in the second direction y relative to the first portion 611. The third portion 613 may be located on the second side y2 in the second direction y relative to the first portion 611 and on a second side x2 in the first direction x relative to the second portion 612. The third portion 613 may be smaller than the first portion 611 and larger than the second portion 612. The third portion 613 may have an elongated shape with the first direction x as its longitudinal direction.

[0085] The back surface metal layer 62 may be exposed from the second resin surface 82 to the second side z2 in the third direction z.

[0086] The first terminal 11 and the second terminal 21 may be bent toward the first side z1 in the third direction z.

[0087] The third conductive member 3 may have a third terminal 31 and a plurality of connecting portions 32. The third terminal 31 may protrude from the resin fifth surface 85 toward the first side y1 in the second direction y. The plurality of connecting portions 32 may be conductively joined to the first portion 611, for example, via a conductive bonding material 39. The conductive bonding material 39 may be, for example, solder, silver paste, or the like. The connecting portions 32 may be conductively joined to the first portion 611 by laser bonding, ultrasonic bonding, or the like.

[0088] The fourth terminal 41 may extend along the second direction y and have a size in the first direction x greater than the first terminal 11 and the first pad 12. The fourth pad portion 42 may include a plurality of bent portions, and a portion that bulges out toward the second side z2 in the third direction z may be conductively joined to the second electrode 92 and the fifth electrode 95. The fourth conductive member 4 may include a portion located on the first side z1 in the third direction z with respect to the third portion 613 and may have a shape that straddles the third portion 613 in the second direction y.

[0089] The fourth conductive member 4 may include a fifth terminal 49. The fifth terminal 49 may protrude from the resin sixth surface 86 toward the second side y2 in the second direction y. The fifth terminal 49 may have a shape bent toward the first side z1 in the third direction z. The fifth terminal 49 may be located between the fourth terminal 41 and the second terminal 21 in the first direction x.

[0090] The first semiconductor element 9A and the second semiconductor element 9B may be mounted on the first portion 611. The first electrode 91 and the fourth electrode 94 may be conductively joined to the first portion 611.

[0091] The third electrode 93 may be connected to the first pad 12 via a wire 71. A portion of the wire 71 may be joined to the second portion 612.

[0092] The sixth electrode 96 may be joined to the third portion 613 by the wire 72. The third portion 613 may be connected to the second pad 22 via the wire 79. As a result, the first conductive member 1 is electrically connected to the sixth electrode 96 via the wire 79, the third portion 613, and the wire 72.

[0093] According to this embodiment, the plurality of first semiconductor elements 9A and second semiconductor elements 9B can function more appropriately. The back surface metal layer 62 is insulated from the first semiconductor elements 9A and the second semiconductor elements 9B by the insulating layer 60 and is exposed from the second resin surface 82 to the second side z2 in the third direction z. This allows the back surface metal layer 62 to be bonded to a heat sink (not shown) or the like to promote heat dissipation from the semiconductor device A7. As can be understood from this embodiment, the specific configuration of the semiconductor device disclosed herein is not limited in any way.

[0094] The semiconductor device according to the present disclosure is not limited to the above-described embodiment, and the specific configuration of each part of the semiconductor device according to the present disclosure can be freely modified in various ways.

[0095] [Supplementary Note 1] A semiconductor device comprising: a first semiconductor element (9A); a second semiconductor element (9B); a first conductive member (1) having a first terminal (11); a second conductive member (2) having a second terminal (21); a third conductive member (3) having a third terminal (31); a fourth conductive member (4) having a fourth terminal (41); and a sealing resin (8) covering the first semiconductor element (9A) and the second semiconductor element (9B), wherein the first semiconductor element (9A) has a first electrode (91) and a second electrode (92), and a third electrode (93) for controlling the conduction and insulation of the first electrode (91) and the second electrode (92), The semiconductor device (A1) according to Supplementary Note 1, wherein the second semiconductor element (9B) has a fourth electrode (94) and a fifth electrode (95) and a sixth electrode (96) for controlling the conduction and insulation of the fourth electrode (94) and the fifth electrode (95), the third terminal (31) is conductive to the first electrode (91) and the fourth electrode (94), the fourth terminal (41) is conductive to the second electrode (92) and the fifth electrode (95), the first terminal (11) is conductive to the third electrode (93) and insulated from the sixth electrode (96), and the second terminal (21) is conductive to the sixth electrode (96) and insulated from the third electrode (93). [Supplementary Note 2] The semiconductor device (A1) according to Supplementary Note 1, wherein the first semiconductor element (9A) is a bipolar transistor, and the second semiconductor element (9B) is a unipolar n-type transistor. [Supplementary Note 3] The semiconductor device (A1) according to Supplementary Note 2, wherein the first semiconductor element (9A) is an IGBT, and the second semiconductor element (9B) is a MOSFET. [Supplementary Note 4] The semiconductor device (A1) according to Supplementary Note 3, wherein the first semiconductor element (9A) is a Si-IGBT, and the second semiconductor element (9B) is a SiC-MOSFET. [Supplementary Note 5] The semiconductor device (A1) according to any one of Supplements 1 to 4, wherein the third conductive member (3) has an island portion (30) on which the first semiconductor element (9A) and the second semiconductor element (9B) are mounted. [Supplementary Note 6] The semiconductor device (A2) according to Supplementary Note 5, wherein the first semiconductor element (9A) includes a body diode (901) whose forward direction is from the fourth terminal (41) to the third terminal (31).[Supplementary Note 7] The semiconductor device (A3) according to Supplementary Note 5, wherein the second semiconductor element (9B) includes a Schottky barrier diode (901) whose forward direction is from the fourth terminal (41) to the third terminal (31). [Supplementary Note 8] The semiconductor device (A4) according to Supplementary Note 5, further including a diode element (9C) mounted on the island portion (30) and whose forward direction is from the fourth terminal (41) to the third terminal (31). [Supplementary Note 9] The semiconductor device (A5) according to any one of Supplementary Notes 1 to 4, wherein the third conductive member (3) has an island portion (30) on which the first semiconductor element (9A) and the second semiconductor element (9B) are mounted, and a surface of the island portion (30) exposed from the sealing resin (8) constitutes the third terminal (31). [Supplementary Note 10] The semiconductor device (A6) according to Supplementary Note 9 further includes a diode element (9C) mounted on the island portion (30) and having a forward direction extending from the fourth terminal (41) to the third terminal (31). [Supplementary Note 11] The semiconductor device (A7) according to any one of Supplements 1 to 4 further includes a substrate (6) including an insulating layer (60) and a front metal layer (61) and a back metal layer (62) stacked with the insulating layer (60) sandwiched therebetween, the front metal layer (61) including a sixth conductive member (611), a seventh conductive member (612), and an eighth electrode conductive member (613) spaced apart from each other, and the first semiconductor element (9A) and the second semiconductor element (9B) are mounted on the sixth conductive member (611). [Supplementary Note 12] The semiconductor device (A7) according to Supplementary Note 11 further includes the third conductive member (3) conductively joined to the sixth conductive member (611). [Supplementary Note 13] The semiconductor device (A7) according to Supplementary Note 11 or 12, wherein the conduction path between the first conductive member (1) and the third electrode (93) is conductive via the seventh conductive member (612). [Supplementary Note 14] The semiconductor device (A7) according to any one of Supplementary Notes 11 to 13, wherein the second conductive member (2) and the sixth electrode (96) are conductive via the eighth electrode conductive member (613). [Supplementary Note 15] The semiconductor device (A7) according to any one of Supplementary Notes 11 to 14, wherein the fourth conductive member (4) further includes a fifth terminal (49) protruding from the sealing resin (8) away from the fourth terminal (41).

[0096] A1, A2, A3, A4, A5, A6, A7: semiconductor device 1: first conductive member 2: second conductive member 3: third conductive member 4: fourth conductive member 5, 5A: fifth conductive member 6: substrate 8: sealing resin 9A: first semiconductor element 9B: second semiconductor element 9C: diode element 11: first terminal 12: first pad 21: second terminal 22: second pad 30: island portion 31: third terminal 32: connection portion 39: conductive bonding material 41: fourth terminal 42: fourth pad portion 49: fifth terminal 51, 51A, 51B: fifth terminal 52, 52A, 52B: fifth pad 60: insulating layer 61: surface metal layer 62: back metal layer 71, 72, 73, 74, 75, 76, 77, 79: Wires 81: First resin surface 82: Second resin surface 83: Third resin surface 84: Fourth resin surface 85: Fifth resin surface 86: Sixth resin surface 90A: First main body portion 90B: Second main body portion 91: First electrode 92: Second electrode 93: Third electrode 94: Fourth electrode 95: Fifth electrode 96: Sixth electrode 99: Conductive bonding material 301: Through hole 611: First portion 612: Second portion 613: Third portion 801: Through hole 802: Recess 803: Recess 901: Diode 902: Body diode 903: Shot barrier key diode x: First direction x1: First side x2: Second side y: Second direction y1: First side y2: Second side z: Third direction z1: First side z2: Second side

Claims

1. A semiconductor device comprising: a first semiconductor element; a second semiconductor element; a first conductive member having a first terminal; a second conductive member having a second terminal; a third conductive member having a third terminal; a fourth conductive member having a fourth terminal; and a sealing resin covering the first semiconductor element and the second semiconductor element, wherein the first semiconductor element has a first electrode and a second electrode, and a third electrode for controlling conductivity and insulation between the first electrode and the second electrode, the second semiconductor element has a fourth electrode and a fifth electrode, and a sixth electrode for controlling conductivity and insulation between the fourth electrode and the fifth electrode, the third terminal is conductive to the first electrode and the fourth electrode, the fourth terminal is conductive to the second electrode and the fifth electrode, the first terminal is conductive to the third electrode and insulated from the sixth electrode, and the second terminal is conductive to the sixth electrode and insulated from the third electrode.

2. The semiconductor device according to claim 1, wherein the first semiconductor element is a bipolar transistor, and the second semiconductor element is a unipolar n-type transistor.

3. The semiconductor device according to claim 2, wherein the first semiconductor element is an IGBT, and the second semiconductor element is a MOSFET.

4. The semiconductor device according to claim 3, wherein the first semiconductor element is a Si-IGBT, and the second semiconductor element is a SiC-MOSFET.

5. The semiconductor device according to any one of claims 1 to 4, wherein the third conductive member has an island portion on which the first semiconductor element and the second semiconductor element are mounted.

6. The semiconductor device according to claim 5, wherein said first semiconductor element includes a body diode whose forward direction is from said fourth terminal toward said third terminal.

7. The semiconductor device according to claim 5, wherein said second semiconductor element includes a Schottky barrier diode whose forward direction is from said fourth terminal toward said third terminal.

8. The semiconductor device according to claim 5, further comprising a diode element mounted on said island portion, said diode element having a forward direction extending from said fourth terminal toward said third terminal.

9. A semiconductor device according to any one of claims 1 to 4, wherein the third conductive member has an island portion on which the first semiconductor element and the second semiconductor element are mounted, and the surface of the island portion exposed from the sealing resin constitutes the third terminal.

10. The semiconductor device according to claim 9, further comprising a diode element mounted on said island portion, said diode element having a forward direction extending from said fourth terminal toward said third terminal.

11. A semiconductor device according to any one of claims 1 to 4, comprising a substrate including an insulating layer and a front metal layer and a back metal layer stacked on either side of the insulating layer, the front metal layer including a sixth conductive member, a seventh conductive member and an eighth electrode conductive member spaced apart from one another, and the first semiconductor element and the second semiconductor element being mounted on the sixth conductive member.

12. The semiconductor device according to claim 11, wherein the third conductive member is conductively joined to the sixth conductive member.

13. The semiconductor device according to claim 11 or 12, wherein the conduction path between said first conductive member and said third electrode is electrically connected via said seventh conductive member.

14. A semiconductor device according to any one of claims 11 to 13, wherein said second conductive member and said sixth electrode are electrically connected via said eighth electrode conductive member.

15. The semiconductor device according to claim 11, wherein the fourth conductive member further includes a fifth terminal that protrudes from the sealing resin and is spaced apart from the fourth terminal.

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