Power module and semiconductor device

Abstract

In the present invention, there are first wiring members (11) that each have a mounting surface (15) on which a semiconductor element (2) is mounted, and an exposed surface (16) which is exposed on the reverse side from the mounting surface (15). Second wiring members (12) are disposed so as to be spaced apart from the first wiring members (11) in a direction orthogonal to the plate thickness direction of the first wiring members (11). There are holding members (20) that are each disposed between a first wiring member (11) and a second wiring member (12), and hold the first wiring member (11) and the second wiring member (12). The holding members (20) have protrusions (22). There are protrusions (22) that protrude from the exposed surfaces (16) toward the exposed surface (16) side in the plate thickness direction.

Description

Power module and semiconductor device

[0001] The present disclosure relates to a power module and a semiconductor device.

[0002] Patent Document 1 discloses a power module including a power semiconductor element, a ceramic substrate that is a circuit board on which the power semiconductor element is mounted, and a heat dissipation fin on which the ceramic substrate is mounted using heat dissipation grease.

[0003] Patent No. 6234630

[0004] In the invention of Patent Document 1, a ceramic substrate is disposed between the power semiconductor element and the heat dissipation fin as an insulating heat dissipation member, which causes a problem that when heat generated by the power semiconductor element is dissipated, thermal resistance occurs in the insulating heat dissipation member, resulting in a deterioration of heat dissipation performance.

[0005] An object of the present disclosure is to facilitate the dissipation of heat generated in a semiconductor element.

[0006] A first aspect of the present disclosure is a semiconductor device (2), a first wiring member (11) made of a conductive plate-like member and having a mounting surface (15) on which the semiconductor element (2) is mounted and an exposed surface (16) exposed on the side opposite to the mounting surface (15), and a second wiring member (11) made of a conductive plate-like member and arranged at an interval from the first wiring member (11) in a direction perpendicular to the plate thickness direction of the first wiring member (11), and having an exposed surface (16) exposed on the same side as the exposed surface (16) of the first wiring member (11). the power module includes: a second wiring member (12) that is disposed between the first wiring member (11) and the second wiring member (12), the insulating holding member (20) that holds the first wiring member (11) and the second wiring member (12), and the insulating holding member (20) has a protrusion (22) that protrudes from the exposed surface (16) toward the exposed surface (16) in a plate thickness direction; and an insulating sealing material (36) that covers at least the semiconductor element (2) and the mounting surfaces (15) of the first wiring member (11) and the second wiring member (12).

[0007] In the first aspect, the heat generated in the semiconductor element 2 is directly dissipated from the exposed surface 16 of the first wiring member 11, thereby reducing the thermal resistance. Furthermore, the provision of the protrusion 22 ensures a creepage insulation distance between the first wiring member 11 and the second wiring member 12.

[0008] In a second aspect of the present disclosure, in the power module of the first aspect, an end portion of the first wiring member (11) on the mounting surface (15) side of the holding member (20) is flush with the mounting surface (15) or is positioned closer to the exposed surface (16) than the mounting surface (15).

[0009] In the second aspect, the holding member (20) can be prevented from interfering with wire bonding between the first wiring member (11) and the second wiring member (12), and the amount of holding member (20) used can be reduced.

[0010] A third aspect of the present disclosure is the power module of the first or second aspect, wherein the protrusion (22) has a shape that tapers toward a tip of the protrusion (22).

[0011] In the third aspect, the heat generated in the semiconductor element (2) is dissipated so as to spread outward along the tapered shape of the protrusion (22), thereby reducing the thermal resistance.

[0012] A fourth aspect of the present disclosure is the power module of any one of the first to third aspects, further comprising a connection terminal (13) formed integrally with the first wiring member (11).

[0013] In the fourth aspect, it is not necessary to perform a separate step of connecting the first wiring member (11) and the connection terminal (13), and the number of work steps can be reduced.

[0014] In a fifth aspect of the present disclosure, in the power module of the fourth aspect, the connection terminal (13) extends in a direction perpendicular to the plate thickness direction of the first wiring member (11) and includes an insulating member (25) provided on the connection terminal (13) on the exposed surface (16) side of the first wiring member (11).

[0015] In the fifth aspect, even if the connection terminal (13) is extended in a direction perpendicular to the thickness direction of the first wiring member (11), an insulating member (25) is provided on the connection terminal (13) on the exposed surface (16) of the first wiring member (11), thereby ensuring an insulating distance.

[0016] A sixth aspect of the present disclosure is the power module of the fourth aspect, wherein the connection terminal (13) extends from the mounting surface (15) of the first wiring member (11) toward the mounting surface (15) in a plate thickness direction, and then extends in a direction perpendicular to the plate thickness direction of the first wiring member (11).

[0017] In the sixth aspect, the connection terminal (13) is bent multiple times and extended from the first wiring member (11), thereby making it possible to further increase the insulation distance.

[0018] A seventh aspect of the present disclosure is a power module according to any one of the fourth to sixth aspects, wherein a plurality of wiring layers (50) including the first wiring member (11) and the second wiring member (12) are provided at intervals in the plate thickness direction.

[0019] In the seventh aspect, by providing a plurality of wiring layers (50) at intervals in the thickness direction, the space in the thickness direction can be effectively utilized, thereby enabling the module to be made smaller.

[0020] An eighth aspect of the present disclosure is the power module of any one of the first to seventh aspects, further comprising a case (30) that covers the sealing material (36).

[0021] In the eighth aspect, the sealing material (36) is covered with the case (30), thereby protecting the semiconductor element (2).

[0022] A ninth aspect of the present disclosure is the power module of any one of the first to seventh aspects, wherein the sealing material (36) is formed of molded resin, and the holding member (20) is molded integrally with the sealing material (36).

[0023] In the ninth aspect, the holding member (20) is molded integrally with the sealing material (36), thereby eliminating the need to provide a separate holding member (20), thereby enabling cost reduction.

[0024] A tenth aspect of the present disclosure is a semiconductor device including: a power module (10) according to any one of the first to ninth aspects; a heat radiator (40) arranged to abut against the protrusion (22) of the holding member (20); and an insulating thermally conductive material (41) arranged between the exposed surfaces (16) of the first wiring member (11) and the second wiring member (12) and the heat radiator (40).

[0025] In a tenth aspect, a semiconductor device can be provided that includes a power module (10), a heat radiator (40), and a thermally conductive material (41).

[0026] FIG. 1 is a side cross-sectional view showing the configuration of a power module according to the first embodiment. FIG. 2 is a side cross-sectional view showing the configuration of a semiconductor device. FIG. 3 is a side cross-sectional view explaining a creepage insulation distance of a comparative example. FIG. 4 is a side cross-sectional view explaining a creepage insulation distance when a protrusion is provided. FIG. 5 is a side cross-sectional view showing the configuration of a protrusion according to the second embodiment. FIG. 6 is a side cross-sectional view showing the configuration of a protrusion according to the third embodiment. FIG. 7 is a side cross-sectional view showing the configuration of a protrusion according to the fourth embodiment. FIG. 8 is a side cross-sectional view showing the configuration of a connection terminal according to the fifth embodiment. FIG. 9 is a side cross-sectional view showing the configuration of a connection terminal according to the sixth embodiment. FIG. 10 is a side cross-sectional view showing the configuration of a connection terminal according to the seventh embodiment. FIG. 11 is a side cross-sectional view showing the configuration of a power module according to the eighth embodiment. FIG. 12 is a side cross-sectional view showing the configuration of a semiconductor device. FIG. 13 is a side cross-sectional view showing the configuration of a power module according to the ninth embodiment. FIG. 14 is a side cross-sectional view showing the configuration of a semiconductor device.

[0027] First Embodiment Power Module As shown in FIGS. 1 and 2 , a power module (10) includes a semiconductor element (2), a first wiring member (11), a second wiring member (12), a holding member (20), a case (30), and a sealing material (36).

[0028] The first wiring member (11) is made of a conductive plate-like member. The first wiring member (11) has a mounting surface (15) and an exposed surface (16) that is exposed on the side opposite to the mounting surface (15). The semiconductor element (2) is mounted on the mounting surface (15) by solder (3).

[0029] The second wiring member (12) is made of a conductive plate-like member and is disposed at a distance from the first wiring member (11) in a direction perpendicular to the thickness direction of the first wiring member (11).

[0030] The second wiring member (12) has a mounting surface (15) and an exposed surface (16) that is exposed on the side opposite to the mounting surface (15). The exposed surface (16) of the second wiring member (12) is exposed on the same side as the exposed surface (16) of the first wiring member (11).

[0031] The semiconductor element (2) is, for example, an insulated gate bipolar transistor (IGBT) or a diode. In the example shown in Fig. 1, two semiconductor elements (2) are provided. The semiconductor elements (2) and the second wiring member (12) are connected by a wire (4).

[0032] One end of an external terminal (5) is electrically connected to the first wiring member (11) and the second wiring member (12). The other end of the external terminal (5) extends to protrude outside the case (30). The other end of the external terminal (5) is connected to a control board (not shown).

[0033] The holding member (20) is made of an insulating material and is disposed between the first wiring member (11) and the second wiring member (12). The holding member (20) holds the first wiring member (11) and the second wiring member (12).

[0034] The holding member (20) has a holding portion (21) and a protrusion (22). The holding portion (21) is disposed between the first wiring member (11) and the second wiring member (12). A protrusion (22) is provided on each end of the holding portion (21) in the vertical direction in FIG. 1 . The protrusion (22) is integrally formed with the holding portion (21).

[0035] The lower protrusions (22) in Fig. 1 protrude from the exposed surfaces (16) of the first wiring member (11) and the second wiring member (12) toward the exposed surfaces (16) in the thickness direction. The upper protrusions (22) in Fig. 1 protrude from the mounting surfaces (15) of the first wiring member (11) and the second wiring member (12) toward the mounting surfaces (15) in the thickness direction.

[0036] The case (30) is made of, for example, an insulating resin material. The case (30) covers the mounting surfaces (15) of the first wiring member (11) and the second wiring member (12) so as to define an internal space (35). A sealant (36) is sealed in the internal space (35) of the case (30). The sealant (36) is covered by the case (30).

[0037] The case (30) has a facing portion (31) and a peripheral wall portion (32). The facing portion (31) faces the mounting surfaces (15) of the first wiring member (11) and the second wiring member (12). The peripheral wall portion (32) extends along the periphery of the facing portion (31) toward the first wiring member (11) and the second wiring member (12). A stepped surface (33) is provided on the inner periphery of the peripheral wall portion (32) of the case (30).

[0038] The sealing material (36) includes an insulating material, such as a resin material, and covers the semiconductor element (2), the mounting surface (15) of the first wiring member (11), the mounting surface (15) of the second wiring member (12), and the wire (4).

[0039] 1 , the left end of the first wiring member (11) located at the left end and the right end of the second wiring member (12) located at the right end are each supported by an insulating member (25). The insulating member (25) protrudes from the exposed surfaces (16) of the first wiring member (11) and the second wiring member (12) toward the exposed surfaces (16) in the plate thickness direction by the same length as the protrusions (22) of the holding member (20). The insulating member (25) abuts against the stepped surface (33) of the case (30).

[0040] In the power module (10) configured in this manner, heat generated in the semiconductor element (2) can be dissipated directly from the exposed surface (16) of the first wiring member (11). Furthermore, by providing the protrusion (22), it is possible to ensure a creepage insulation distance between the first wiring member (11) and the second wiring member (12).

[0041] Specifically, in the comparative example shown in FIG. 3, the holding member (20) does not have a protrusion (22), and the creepage insulation distance L′ between the first wiring member (11) and the second wiring member (12) is the length of the gap between the first wiring member (11) and the second wiring member (12).

[0042] On the other hand, as shown in FIG. 4, when the holding member (20) is provided with a protrusion (22), the creepage insulation distance L between the first wiring member (11) and the second wiring member (12) is the length from the first wiring member (11) to the second wiring member (12) along the outer peripheral surface of the protrusion (22), and L>L'.

[0043] <Semiconductor Device> As shown in FIG. 2, the semiconductor device (1) includes a power module (10), a heat radiator (40), and a thermally conductive material (41).

[0044] The radiator (40) is made of a heat-conductive material such as copper or aluminum. The radiator (40) is arranged so as to abut against the protrusions (22) of the holding member (20) of the power module (10) and the insulating member (25). The power module (10) is fastened to the radiator (40) by, for example, fastening screws (not shown).

[0045] The thermally conductive material (41) has insulating properties. The thermally conductive material (41) is, for example, grease. The thermally conductive material (41) is disposed between the exposed surfaces (16) of the first wiring member (11) and the second wiring member (12) and the heat radiator (40). In this case, the thickness of the thermally conductive material (41) can be set depending on the protrusion amount of the protrusion (22). The first wiring member (11) and the second wiring member (12) are in thermal contact with the heat radiator (40) via the thermally conductive material (41).

[0046] Advantages of First Embodiment According to the features of this embodiment, heat generated in the semiconductor element 2 is directly dissipated from the exposed surface 16 of the first wiring member 11, thereby reducing thermal resistance. Furthermore, the provision of the protrusions 22 ensures a creepage insulation distance between the first wiring member 11 and the second wiring member 12.

[0047] According to the feature of this embodiment, the sealing material (36) is covered with the case (30), thereby making it possible to protect the semiconductor element (2).

[0048] According to the features of this embodiment, it is possible to provide a semiconductor device including a power module (10), a heat radiator (40), and a thermally conductive material (41).

[0049] Second Embodiment Hereinafter, the same parts as those in the first embodiment will be denoted by the same reference numerals, and only the differences will be described.

[0050] As shown in Figure 5, the holding member (20) has a holding portion (21) and a protrusion (22). The holding portion (21) is disposed between the first wiring member (11) and the second wiring member (12). The holding portion (21) has a protrusion (22) at the end on the lower side in Figure 1. The protrusion (22) is formed integrally with the holding portion (21).

[0051] The protrusions (22) protrude from the exposed surfaces (16) of the first wiring member (11) and the second wiring member (12) toward the exposed surfaces (16) in the thickness direction.

[0052] 1 , the end of the holding portion (21) on the upper side is not provided with the protrusion (22), and therefore the end of the holding member (20) on the mounting surface (15) side of the first wiring member (11) is flush with the mounting surface (15). Here, the mounting surface (15) sides of the first wiring member (11) and the second wiring member (12) are sealed with the sealing material (36), and therefore, the creepage insulation distance between the first wiring member (11) and the second wiring member (12) can be ensured also on the mounting surface (15) side.

[0053] Advantages of the Second Embodiment According to the features of the second embodiment, the holding member (20) can be prevented from interfering with wire bonding between the first wiring member (11) and the second wiring member (12). In addition, the amount of holding member (20) used can be reduced.

[0054] Third Embodiment As shown in Fig. 6, the holding member (20) has a holding portion (21) and a protrusion (22). The holding portion (21) is disposed between the first wiring member (11) and the second wiring member (12). A protrusion (22) is provided on each end of the holding portion (21) in the vertical direction in Fig. 1. The protrusion (22) is integrally formed with the holding portion (21).

[0055] The upper protrusion (22) in FIG. 1 protrudes from the mounting surface (15) of the first wiring member (11) and the second wiring member (12) toward the mounting surface (15) in the thickness direction.

[0056] 1, the lower protrusion 22 protrudes from the exposed surface 16 of the first wiring member 11 and the second wiring member 12 toward the exposed surface 16 in the plate thickness direction. The lower protrusion 22 has a tapered shape toward the tip of the protrusion 22.

[0057] -Effects of embodiment 3- According to the features of this embodiment, heat generated in the semiconductor element (2) is dissipated so as to spread outward along the tapered shape of the protrusion (22), thereby reducing thermal resistance.

[0058] 7 , the holding member (20) has a protrusion (22). The protrusion (22) protrudes from the exposed surfaces (16) of the first wiring member (11) and the second wiring member (12) toward the exposed surfaces (16) in the plate thickness direction. In this manner, the protrusion (22) is disposed closer to the exposed surfaces (16) than the mounting surfaces (15) of the first wiring member (11) and the second wiring member (12).

[0059] Effect of the Fourth Embodiment According to the features of the fourth embodiment, the holding member (20) can be prevented from interfering with wire bonding between the first wiring member (11) and the second wiring member (12). In addition, the amount of holding member (20) used can be reduced.

[0060] Fifth Embodiment As shown in Fig. 8 , the first wiring member (11) has a connection terminal (13). The connection terminal (13) is formed integrally with the first wiring member (11). The connection terminal (13) extends in the thickness direction of the first wiring member (11) (upward in Fig. 8 ). The connection terminal (13) penetrates the opposing portion (31) of the case (30). The connection terminal (13) is connected to a control board (not shown).

[0061] An insulating member (25) is provided on the connection terminal (13) on the side of the exposed surface (16) of the first wiring member (11). The insulating member (25) supports the connection terminal (13). The insulating member (25) abuts against the heat radiator (40).

[0062] -Effects of embodiment 5- According to the features of this embodiment, by integrally forming the first wiring member (11) and the connection terminal (13), there is no need to perform a separate process of connecting the first wiring member (11) and the connection terminal (13), and the number of work steps can be reduced.

[0063] Sixth Embodiment As shown in Fig. 9 , the first wiring member (11) has a connection terminal (13). The connection terminal (13) is formed integrally with the first wiring member (11). The connection terminal (13) extends in a direction perpendicular to the thickness direction of the first wiring member (11). The connection terminal (13) penetrates the peripheral wall portion (32) of the case (30) and then extends in the thickness direction of the first wiring member (11) (upward in Fig. 9 ).

[0064] An insulating member (25) is provided on the connection terminal (13) on the side of the exposed surface (16) of the first wiring member (11). The insulating member (25) supports the connection terminal (13). The insulating member (25) abuts against the heat radiator (40).

[0065] -Effects of embodiment 6- According to the features of this embodiment, by integrally forming the first wiring member (11) and the connection terminal (13), there is no need to perform a separate process of connecting the first wiring member (11) and the connection terminal (13), and the number of work steps can be reduced.

[0066] According to the feature of the present embodiment, even if the connection terminal (13) is configured to extend in a direction perpendicular to the thickness direction of the first wiring member (11), the insulating member (25) is provided on the connection terminal (13) on the exposed surface (16) side of the first wiring member (11), thereby ensuring an insulating distance between the connection terminal (13) and the heat radiator (40).

[0067] Seventh Embodiment As shown in Fig. 10 , the first wiring member (11) has a connection terminal (13). The connection terminal (13) is formed integrally with the first wiring member (11). The connection terminal (13) extends from the mounting surface (15) of the first wiring member (11) toward the mounting surface (15) in the thickness direction, and then extends in a direction perpendicular to the thickness direction of the first wiring member (11). The connection terminal (13) penetrates the peripheral wall portion (32) of the case (30), and then extends in the thickness direction of the first wiring member (11) (upward in Fig. 10 ).

[0068] An insulating member (25) is provided on the connection terminal (13) on the side of the exposed surface (16) of the first wiring member (11). The insulating member (25) supports the connection terminal (13). The insulating member (25) abuts against the heat radiator (40).

[0069] -Effects of Embodiment 7- According to the features of this embodiment, the connection terminal (13) is bent multiple times and extended from the first wiring member (11), thereby further increasing the insulation distance between the connection terminal (13) and the heat radiator (40).

[0070] 11 and 12 , a power module (10) includes a semiconductor element (2), a first wiring member (11), a second wiring member (12), a holding member (20), and a sealing material (36). The second wiring member (12) is disposed at a distance from the first wiring member (11) in a direction perpendicular to the thickness direction of the first wiring member (11).

[0071] The first wiring member 11 located at the left end in Fig. 11 has a connection terminal 13. The connection terminal 13 is formed integrally with the first wiring member 11. The connection terminal 13 extends in the thickness direction of the first wiring member 11 (upward in Fig. 11).

[0072] The second wiring member 12 located at the right end in Fig. 12 has a connection terminal 13. The connection terminal 13 is formed integrally with the second wiring member 12. The connection terminal 13 extends in the thickness direction of the second wiring member 12 (upward in Fig. 11).

[0073] The sealing material (36) is made of a mold resin and covers the semiconductor element (2), the mounting surface (15) of the first wiring member (11), the mounting surface (15) of the second wiring member (12), and the wire (4).

[0074] The holding member (20) is molded integrally with the sealing material (36). Specifically, when the sealing material (36) is molded, the sealing material (36) is caused to protrude from the gap between the first wiring member (11) and the second wiring member (12), thereby forming the holding member (20) integrally with the sealing material (36).

[0075] The holding member (20) has a protrusion (22) that protrudes from the exposed surfaces (16) of the first wiring member (11) and the second wiring member (12) toward the exposed surfaces (16) in the plate thickness direction.

[0076] -Effects of embodiment 8- According to the feature of this embodiment, by molding the retaining member (20) integrally with the sealing material (36), there is no need to provide the retaining member (20) as a separate component, thereby achieving cost reduction.

[0077] 13 and 14 , a power module (10) includes a plurality of wiring layers (50). The plurality of wiring layers (50) are provided at intervals in the thickness direction. The wiring layers (50) include a first wiring layer (51) and a second wiring layer (52).

[0078] The first wiring layer 51 includes a first wiring member 11, a second wiring member 12, a semiconductor element 2, and a wire 4. The first wiring member 11 and the second wiring member 12 include connection terminals 13.

[0079] The second wiring layer 52 includes a first wiring member 11, a second wiring member 12, a semiconductor element 2, an electronic component 6, and a wire 4. The first wiring member 11 and the second wiring member 12 include connection terminals 13.

[0080] The electronic component (6) is, for example, a resistor, a capacitor, an inductor, a thermistor, etc. The electronic component (6) straddles the first wiring member (11) and the second wiring member (12) and is electrically connected to them by solder (3).

[0081] The first wiring member (11) or the second wiring member (12) of the first wiring layer (51) and the first wiring member (11) or the second wiring member (12) of the second wiring layer (52) are electrically connected by a conductive member (53).

[0082] The mounting surface (15) side of the first wiring layer (51) and the mounting surface (15) side and exposed surface (16) side of the second wiring layer (52) are sealed with a sealant (36). The sealant (36) is made of a molded resin. The sealant (36) is not provided on the exposed surface (16) side of the first wiring layer (51), and the exposed surface (16) of the first wiring layer (51) is exposed.

[0083] The holding member (20) is molded integrally with the sealing material (36). Specifically, when the sealing material (36) is molded, the sealing material (36) is caused to protrude from the gap between the first wiring member (11) and the second wiring member (12), thereby forming the holding member (20) integrally with the sealing material (36).

[0084] The holding member (20) has a protrusion (22) that protrudes from the exposed surfaces (16) of the first wiring member (11) and the second wiring member (12) toward the exposed surfaces (16) in the plate thickness direction.

[0085] -Effects of embodiment 9- According to the features of this embodiment, by providing multiple wiring layers (50) spaced apart in the thickness direction of the plate, the space in the thickness direction of the plate can be effectively utilized, thereby making it possible to miniaturize the module.

[0086] Other Embodiments Although the embodiments and modifications have been described above, it will be understood that various modifications in form and detail are possible without departing from the spirit and scope of the claims. Furthermore, elements of the above embodiments, modifications, and other embodiments may be combined or substituted as appropriate. Furthermore, the terms "first," "second," "third," etc. in the specification and claims are used to distinguish between terms to which these terms are attached, and do not limit the number or order of those terms.

[0087] As described above, the present disclosure is useful for power modules and semiconductor devices.

[0088] REFERENCE SIGNS LIST 1 semiconductor device 2 semiconductor element 10 power module 11 first wiring member 12 second wiring member 13 connection terminal 15 mounting surface 16 exposed surface 20 holding member 22 protrusion 25 insulating member 30 case 36 sealing material 40 heat sink 41 thermally conductive material 50 wiring layer

Claims

1. A semiconductor element (2); a first wiring member (11) made of a conductive plate-like member and having a mounting surface (15) on which the semiconductor element (2) is mounted and an exposed surface (16) exposed on the side opposite the mounting surface (15); a second wiring member (12) made of a conductive plate-like member and arranged at an interval from the first wiring member (11) in a direction perpendicular to the plate thickness direction of the first wiring member (11), and having an exposed surface (16) exposed on the same side as the exposed surface (16) of the first wiring member (11); an insulating holding member (20) arranged between the first wiring member (11) and the second wiring member (12), holding the first wiring member (11) and the second wiring member (12), and having a protrusion (22) protruding from the exposed surface (16) toward the exposed surface (16) in the plate thickness direction; a power module comprising: an insulating sealing material (36) that covers at least the semiconductor element (2) and the mounting surfaces (15) of the first wiring member (11) and the second wiring member (12).

2. A power module according to claim 1, wherein an end of said first wiring member (11) on said holding member (20) facing said mounting surface (15) is flush with said mounting surface (15) or is positioned closer to said exposed surface (16) than said mounting surface (15).

3. A power module according to claim 1 or 2, wherein the protrusion (22) has a shape tapered toward the tip of the protrusion (22).

4. The power module according to any one of claims 1 to 3, comprising a connection terminal (13) formed integrally with the first wiring member (11).

5. A power module according to claim 4, wherein the connection terminal (13) extends in a direction perpendicular to the thickness direction of the first wiring member (11), and comprises an insulating member (25) provided on the connection terminal (13) on the side of the exposed surface (16) of the first wiring member (11).

6. A power module according to claim 4, wherein the connection terminal (13) extends from the mounting surface (15) of the first wiring member (11) toward the mounting surface (15) in the thickness direction, and then extends in a direction perpendicular to the thickness direction of the first wiring member (11).

7. A power module according to any one of claims 4 to 6, wherein a plurality of wiring layers (50) including the first wiring member (11) and the second wiring member (12) are provided at intervals in the thickness direction.

8. A power module according to any one of claims 1 to 7, comprising a case (30) that covers the sealing material (36).

9. A power module according to any one of claims 1 to 7, wherein the sealing material (36) is formed of a molded resin, and the holding member (20) is molded integrally with the sealing material (36).

10. A semiconductor device comprising: a power module (10) according to any one of claims 1 to 9; a heat sink (40) arranged to abut against the protrusion (22) of the holding member (20); and an insulating thermally conductive material (41) arranged between the heat sink (40) and the exposed surfaces (16) of the first wiring member (11) and the second wiring member (12).

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