Plasma source and substrate processing device

Abstract

A plasma source, according to one aspect of the present invention, comprises: a reaction body including at least one body part forming a toroidal channel formed with a gas diffusion space therein, and at least one gas inlet formed within an inlet region divided into at least a first region and a second region on an upper surface of the body part such that a process gas supplied from the outside is injected into the toroidal channel; at least one magnetic core part arranged so as to surround a portion of the body part; at least one insulating part coupled to a portion of the body part; and a winding part arranged so as to wind the magnetic core part and induce a magnetic force in the magnetic core part by receiving power from a power source, wherein the center of the gas inlet may be formed in the first region and the second region on the basis of the magnetic core part being located on the X-axis when viewing the toroidal channel from above.

Description

Plasma source and substrate processing device

[0001] The present invention relates to semiconductor manufacturing, and more particularly, to a plasma source and a substrate processing device using a plasma source.

[0002] In a substrate processing device for forming a semiconductor device, a device and process are being studied that perform substrate processing by supplying activated reactants, such as radicals, into the process chamber using a plasma source outside the process chamber, such as a remote plasma generator, without directly forming plasma within the process chamber. By utilizing a remote plasma generator in this manner, desired reactants can be generated and supplied into the process chamber, and since plasma is not directly formed within the process chamber, plasma damage to the substrate can be prevented.

[0003] Furthermore, to reduce the path by which radicals generated from a remote plasma generator are supplied to the substrate, a structure is being studied that couples the plasma source to the gas injection unit of the process chamber. This structure can increase the activity ratio of radicals supplied from the plasma source to the substrate, thereby enhancing process efficiency.

[0004] However, the aforementioned remote plasma generator or plasma source is designed to use power under limited conditions, which causes a problem of low plasma ignition success rate.

[0005] The present invention aims to solve the aforementioned problems, and provides a plasma source and substrate processing device capable of increasing the plasma ignition success rate by designating gas supply to a specific area, increasing the radical activity rate to enhance process efficiency, and supplying radicals to the entire substrate area. However, these tasks are exemplary and the scope of the present invention is not limited thereby.

[0006] According to an aspect of the present invention for solving the technical problem of the present invention, a plasma source comprises: a reaction body having at least one body part forming a toroidal channel formed as a gas diffusion space therein, and at least one gas inlet formed in an inlet region divided into at least a first region and a second region on an upper surface of the body part so that a process gas supplied from the outside is injected into the toroidal channel; at least one magnetic core part arranged to surround a portion of the body part; at least one insulating part coupled to a portion of the body part; and a winding part arranged to wind the magnetic core part and inducing a magnetic force in the magnetic core part by receiving power from a power source; wherein the center of the gas inlet part is formed in the first region or the second region, and when the toroidal channel is viewed from above, the first region is [ , , , ] is formed as an area satisfying [ , , , ] can be formed into an area satisfying .

[0007] According to some embodiments of the present invention, the reaction body is formed of at least three body parts including a first body in which a first gas inlet, which is one of the gas inlets, is formed, a second body in which a second gas inlet is formed, and a third body in which a third gas inlet is formed, and the magnetic core parts are formed in at least three or more including a first magnetic core, a second magnetic core, and a third magnetic core so as to be respectively coupled to the body parts, and the insulating parts are formed in at least three or more including a first insulating part, a second insulating part, and a third insulating part so as to be respectively coupled between the body parts.

[0008] According to some embodiments of the present invention, the first region [ , , , ] is formed as an area satisfying [ , , , ] can be formed into a satisfactory area.

[0009] According to some embodiments of the present invention, the reaction body is formed of at least four body parts including a first body in which a first gas inlet, which is one of the gas inlets, is formed, a second body in which a second gas inlet is formed, a third body in which a third gas inlet is formed, and a fourth body in which a fourth gas inlet is formed, and the magnetic core parts are formed in at least four pieces including a first magnetic core, a second magnetic core, a third magnetic core, and a fourth magnetic core so as to be respectively coupled to the body parts, and the insulating parts can be formed in at least four pieces including a first insulating part, a second insulating part, a third insulating part, and a fourth insulating part so as to be respectively coupled between the body parts.

[0010] According to some embodiments of the present invention, the first region [ , , , ] is formed as an area satisfying [ , , , ] can be formed into an area satisfying .

[0011] According to some embodiments of the present invention, when looking at the cross-section of the toroidal channel to which the magnetic core portion is coupled, the inlet area is [ , ] can be formed into an area satisfying .

[0012] According to some embodiments of the present invention, the gas inlet may be formed to be inclined from the upper surface of the body portion so that an extension of the gas inlet portion passes through the inside of the magnetic core portion.

[0013] According to an aspect of the present invention for solving the technical problem of the present invention, a substrate processing device may include: a process chamber having a reaction space formed therein; a substrate support unit coupled to the process chamber to support a substrate within the reaction space; a gas injection unit coupled to the process chamber so as to face the substrate support unit, the gas injection unit having a gas injection plate formed thereon for injecting a process gas supplied from outside the process chamber into the reaction space; and a plasma source assembly including a plasma source and a gas discharge plate coupled to a lower portion of the plasma source, the plasma source assembly being coupled to an upper portion of the process chamber to supply an activated process gas to the substrate support unit.

[0014] According to some embodiments of the present invention, the plasma source and substrate processing device configured as described above can increase the plasma ignition success rate by supplying gas to a specific area where the process gas can flow between insulating parts, supply radicals to the entire area of ​​the substrate, and increase the activity ratio of radicals by combining the plasma source with a gas injection unit, thereby providing a plasma source and substrate processing device capable of increasing process reliability. Of course, the scope of the present invention is not limited by these effects.

[0015] FIG. 1 is a schematic diagram showing a plasma source according to one embodiment of the present invention.

[0016] Figure 2 is a schematic perspective view showing the plasma source of Figure 1.

[0017] Figure 3 is a schematic diagram showing power transmission in the plasma source of Figure 1.

[0018] Fig. 4 is a cross-sectional view showing the n-n' cross-section of the plasma source of Fig. 1.

[0019] FIG. 5 is a top view showing a toroidal channel according to one embodiment of the present invention.

[0020] FIG. 6 is a schematic perspective view showing a plasma source according to some embodiments of the present invention.

[0021] Fig. 7 is a top view showing a toroidal channel according to Fig. 6.

[0022] FIG. 8 is a schematic perspective view showing a plasma source according to some embodiments of the present invention.

[0023] Fig. 9 is a top view showing a toroidal channel according to Fig. 8.

[0024] FIG. 10 is a schematic perspective view showing a plasma source according to some embodiments of the present invention.

[0025] Fig. 11 is a top view showing a toroidal channel according to Fig. 10.

[0026] Fig. 12 is a cross-sectional view showing the m-m' cross-section of the plasma source of Fig. 1.

[0027] FIGS. 13 and 14 are schematic drawings showing a substrate processing device according to one embodiment of the present invention.

[0028] Hereinafter, various preferred embodiments of the present invention will be described in detail with reference to the attached drawings.

[0029] The embodiments of the present invention are provided to more fully explain the present invention to those skilled in the art. The following embodiments may be modified in various ways, and the scope of the present invention is not limited to the embodiments described below. Rather, these embodiments are provided to more faithfully and completely explain the present disclosure and to fully convey the spirit of the present invention to those skilled in the art.

[0030] Additionally, the thickness and size of each layer in the drawings are exaggerated for convenience and clarity of explanation. Furthermore, the embodiments of the present invention should not be construed as limited to the specific shapes of the regions illustrated in this specification, and should include, for example, changes in shape resulting from manufacturing processes.

[0031] FIG. 1 is a schematic diagram showing a plasma source (100) according to one embodiment of the present invention, FIG. 2 is a perspective view showing the plasma source (100) of FIG. 1, FIG. 3 is a diagram showing power transmission in the plasma source (100) of FIG. 1, FIG. 4 is a cross-sectional view showing a cross-section of n-n' of the plasma source (100) of FIG. 1, and FIG. 5 is a top view showing a toroidal channel (114) according to one embodiment of the present invention.

[0032] First, a plasma source (100) according to one embodiment of the present invention may largely include a reaction body (110), a magnetic core portion (120), an insulation portion (130), and a winding portion (140).

[0033] As illustrated in FIGS. 1 and 2, the reaction body (110) may include a body portion (112) and a gas inlet portion (116). A gas diffusion space may be formed within the body portion (112).

[0034] Specifically, the body part (112) has a fluid path formed therein that forms a toroidal channel (114) formed as a gas diffusion space, and the cross-sectional shape of the gas diffusion space can have various shapes such as a circle, an ellipse, a semicircle, and a polygon.

[0035] In some embodiments, the interior of the body portion (112) may be formed by coating an insulating material on a conductive material. For example, the body portion (112) may be formed by coating an insulating material, such as a metal oxide, a metal nitride, a metal compound such as a nickel alloy, on a metal.

[0036] The reaction body (110) may be separated or formed as a single body and may be manufactured using a 3D printer.

[0037] As shown in FIGS. 1 and 2, the gas inlet (116) can be formed in at least a portion of the body portion (112).

[0038] Specifically, the gas inlet (116) can be formed on the upper surface of the body (112) so that process gas supplied from the outside is injected into the toroidal channel (114).

[0039] The gas inlet (116) can be formed by penetrating from the body (112) in the direction in which the inner passage formed by the plurality of insulating parts (130) is combined is formed so that the process gas supplied from the outside is sprayed in the direction in which the plasma is ignited.

[0040] A detailed description of the gas inlet (116) will be provided later.

[0041] The insulating portion (130) may be coupled to a portion of the body portion (112). The insulating portion (130) may be interposed between the two body portions (112) so that they are not directly electrically connected to each other but are spaced apart from each other.

[0042] The insulating portion (130) may have a flow path formed therein so that the gas diffusion spaces within the body portion (112) are connected to each other. The insulating portion (130) may be formed of a suitable insulating material, such as ceramic, oxide, nitride, polymer resin, etc.

[0043] Specifically, in the reaction body (110), a body portion (112) may be arranged so that the gas diffusion space forms a toroidal channel (114) as a whole. The body portion (112) is a tubular structure that forms a flow path therein so as to form a portion of the toroidal channel (114).

[0044] More specifically, the body portion (112) may be formed to correspond to structures that are carved out of the overall shape of the toroidal channel (114) so ​​as to define the toroidal channel (114) as a whole. For example, if the toroidal channel (114) is formed as a whole in a donut shape, the body portion (112) may be formed to correspond to structures that are carved out of a plurality of donut shapes.

[0045] The body (112) may be formed with a plasma generation unit and a plasma diffusion unit. The plasma generation unit may have a first length and a first width, and the plasma diffusion unit may have a second length and a second width. In this case, the first length may be smaller than the second length, and the first width may be smaller than the second width. That is, the length and width of the plasma generation unit may be formed to be smaller than the length and width of the plasma diffusion unit, so that the magnetic core unit (120) may be coupled to the outer peripheral surface of the plasma generation unit.

[0046] As illustrated in FIG. 4, in some embodiments, a flange portion (122) may be coupled to the plasma generating portion. For example, a magnetic core portion (120) may be coupled to the plasma generating portion, and flange portions (122) may be coupled to both sides of the magnetic core portion (120). At this time, an insulating portion (130) may be coupled between the magnetic core portion (120) coupled to one side of the body portion (112) and the other side of the body portion (112).

[0047] The gas diffusion space can be communicated with the flow path within the flange portion (122) and the insulation portion (130) so that the toroidal channel (114) is formed throughout the reaction body (110).

[0048] As illustrated in FIGS. 1 and 2, at least one opening may be formed on the lower surface of the body portion (112). The process gas introduced into the toroidal channel (114) through the gas inlet (116) may be activated and discharged to the lower portion of the plasma source (100) through the opening. For example, the opening may be formed in a slit shape.

[0049] As shown in FIGS. 1 and 2, the magnetic core portion (120) can be arranged to surround the reaction body (110) and generate plasma along the toroidal channel (114).

[0050] Each magnetic core portion (120) may be formed as a single closed structure or may have a structure in which a plurality of divided portions are combined, and the magnetic core portion (120) may include a magnetic material, for example, a ferrite material.

[0051] As shown in FIGS. 2 and 3, the winding portion (140) can be arranged to wind the magnetic core portion (120).

[0052] The winding part (140) can receive power from the power supply part (600) and induce a magnetic force within the magnetic core part (120). For example, when the winding part (140) is wound in the width direction of the magnetic core part (120), if power is applied to the winding part (140), a magnetic force can be induced within the magnetic core part (120) along its circumferential direction.

[0053] A plasma source (100) according to one embodiment of the present invention may include a control unit (400), a power supply unit (600), and an ignition unit.

[0054] As illustrated in FIG. 3, the power supply unit (600) may include a power supply device and supply RF power to the winding unit (140) via a resonant circuit unit (not shown). For example, the power supply unit (600) may include a switching mode power supply (SMPS).

[0055] The above ignition unit may include a plurality of flange portions (122) coupled to the body portion (112) on both sides of the insulation portion (130) and at least one switch (SW).

[0056] As illustrated in FIG. 2, at least one switch (SW) may be connected between two adjacent body parts (112) such that the body parts (112) are electrically connected or electrically insulated by bypassing the insulation (130). For example, the body parts (112) may be formed by joining two pieces, and the switches (SW) may be connected between the ends of adjacent body parts (112).

[0057] A switch (SW) can have various structures that can control turning on or off an electrical connection. For example, a switch (SW) can include a transistor that forms an electrical channel according to a control signal.

[0058] As illustrated in FIG. 1, the control unit (400) can control the formation of plasma within the toroidal channel (114) by controlling the power supply unit (600) and / or the switch (SW).

[0059] In the plasma source (100) according to the present invention, the number and shape of the body parts (112) are shown as examples, and two or more may be selected. Furthermore, depending on the number of the body parts (112), the number of the magnetic core part (120), the insulation part (130), the winding part (140), and the switches (SW1, SW2, SW3) may vary.

[0060] According to the plasma source (100), when power is applied from the power supply unit (600) to the winding unit (140), a magnetic force is induced in the magnetic core unit (120), and a current can be induced in the toroidal channel (114) penetrating the inside of the magnetic core unit (120) by this induced magnetic force. By this current, a gas can be activated in the toroidal channel (114), thereby forming a plasma atmosphere.

[0061] In the plasma source (100), a structure in which a magnetic force is induced from a current flowing in a winding (140) to a magnetic core (120), and a current is induced in a toroidal channel (114) by this induced magnetic force may correspond to the principle of a transformer. In this respect, the plasma source of the present invention may also be called a transformer coupled plasma (TCP) device or a magnetic induction plasma device.

[0062] In some embodiments, the winding portion (140) may function as a primary coil, and the toroidal channel (114) defined by the body portion (112) may function as a secondary coil. In this respect, the winding portion (140) may be referred to as a primary coil or primary winding, and the current flowing in the winding portion (140) may be referred to as a primary current. Furthermore, the current induced within the toroidal channel (114) may also be referred to as a secondary current.

[0063] When a secondary current is induced within the toroidal channel (114), the voltage can be applied mostly to both ends of the insulation (130). Therefore, ignition of the plasma within the toroidal channel (114) can be initiated within the insulation (130).

[0064] The gas inlet (116) can supply process gas from the upper surface of the body (112). At this time, an extension line in the direction of supplying the process gas can be formed so as to pass through the point where the plasma is ignited.

[0065] Specifically, as illustrated in FIG. 4, the gas inlet (116) can be formed to be inclined from the upper surface of the body (112) so as to pass through the inside of the magnetic core (120).

[0066] For example, the process gas flowing into the gas inlet (116) can be formed in a direction facing the internal flow path of the body part (112) so that it can directly enter the internal flow path of the body part (112) where the insulation part (130) and the magnetic core part (120) are combined.

[0067] Therefore, the process gas can quickly and directly enter the internal passage of the body part (112) where the insulation part (130) and the magnetic core part (120) are combined, and can be ignited in the internal passage of the insulation part (130) due to the voltage difference between the two ends of the insulation part (130).

[0068] At least one gas inlet (116) can be formed within an inlet area divided into at least a first area (A1) and a second area (A2).

[0069] For example, as illustrated in FIG. 1, the gas inlet (116) may be formed at one or more locations above or below the point where the magnetic core (120) and the insulation (130) are combined.

[0070] More specifically, the location of the gas inlet (116) through which the process gas flowing into the toroidal channel (114) can be most effectively moved to the point of ignition may be included within the first region (A1) and the second region (A2).

[0071] For example, the center of the gas inlet (116) may be formed within the first region (A1) or the second region (A2).

[0072] As illustrated in FIG. 5, when the toroidal channel (114) is viewed from above, the center of the toroidal channel (114) is the center of the X-axis and Y-axis plane coordinates, and a first region formed at the top and a second region formed at the bottom can be defined based on the magnetic core portion (120) being located on the X-axis. At this time, the first region can be described as a first region (A1), a fifth region (A5), and an eighth region (A8) to be described later, and the second region can be described as a second region (A2), a seventh region (A7), and an eleventh region (A11) to be described later.

[0073] The thickness of the plasma zone, which is a toroidal channel (114), is defined by the length of the line segment ac, and the radius (r) of the gas inlet (116) g ) passes through a point of the straight line ac on the X-axis, the center of the magnetic core part (120) is on the X-axis, and as in FIG. 5, the first region (A1) is formed on the upper part of the magnetic core part (120), and the gas inlet (116) can be formed in the first region (A1).

[0074] The first region (A1) may be an upper region than the first line (L1) that is parallel to the upper portion of the magnetic core portion (120). For example, as shown in FIG. 5, when the gas inlet (116) is formed at the closest position on one side (upper direction of FIG. 5) of the magnetic core portion (120), the center of the gas inlet (116) is 1 / 2 (t) of the thickness of the magnetic core portion (120). m) the radius (r) of the gas inlet (116) at the location g ) can be formed above the first line (L1) connecting positions that are separated by a distance.

[0075] That is, the center coordinate y1 of the gas inlet (116) can be formed within an area satisfying [Formula 1] below.

[0076] [Formula 1]

[0077]

[0078] (y: y coordinate of the inlet area, r g : Radius of the gas inlet, t m : 1 / 2 the thickness of the magnetic core)

[0079] The first region (A1) may be an upper region than the third line (L3), which is a straight line connecting the case where the center of the gas inlet (116) is located at point c, the outermost point on the X-axis, and the case where the center of the gas inlet (116) is formed at point d, the lowest point in the positive Y-axis. For example, as illustrated in FIG. 5, the first region (A1) may be an upper region between the coordinates (r1, 0) of point c and the coordinates (0, (s1+r) of point d. g )) may be an area above the third line (L3) connecting the two.

[0080] At this time, if the third line (L3) meets or does not meet the inner circle of the toroidal channel at one point, the following [Formula 3] is satisfied, and more than 50% of the gas inlet (116) can view the internal flow path of the body (112) where the insulation (130) and the magnetic core (120) are combined.

[0081] That is, the center coordinate (x1, y1) of the gas inlet (116) can be formed within an area satisfying [Formula 3] below.

[0082] [Formula 3]

[0083]

[0084] (x: x-coordinate of the inlet area, y: y-coordinate of the inlet area, rg : Radius of the gas inlet, t m : 1 / 2 the thickness of the magnetic core, s1: inner radius of the toroidal channel, r1: outer radius of the toroidal channel)

[0085] The first region (A1) may be an outer region of the inner circle of the toroidal channel (114), since it is formed outside the inner circle of the toroidal channel (114) when the gas inlet (116) is formed in contact with the inner circle of the toroidal channel (114). For example, as illustrated in FIG. 5, the first region (A1) is formed by the inner radius (s1) of the toroidal channel (114) and the radius (r) of the gas inlet (116) centered on the center coordinate (0,0). g ) can be the outer region of a circular graph whose radius is the sum of the two.

[0086] That is, the center coordinates (x1, y) of the gas inlet (116) 1) can be formed within an area satisfying [Formula 5] below.

[0087] [Formula 5]

[0088]

[0089] (x: x-coordinate of the inlet area, y: y-coordinate of the inlet area, r g : radius of the gas inlet, s1: inner radius of the toroidal channel)

[0090] The first region (A1) may be an inner region of the outer circle of the toroidal channel (114), since it is formed inside the outer circle of the toroidal channel (114) when the gas inlet (116) is formed in contact with the outer circle of the toroidal channel (114). For example, as illustrated in FIG. 5, the first region (A1) may be formed from the outer radius (r1) of the toroidal channel (114) to the radius (r) of the gas inlet (116) with the center coordinate (0,0) as the center. g ) can be the outer region of a circular graph with a radius of .

[0091] That is, the center coordinate (x1, y1) of the gas inlet (116) can be formed within an area satisfying [Formula 6] below.

[0092] [Formula 6]

[0093]

[0094] (x: x-coordinate of the inlet area, y: y-coordinate of the inlet area, r g : radius of the gas inlet, r1: outer radius of the toroidal channel)

[0095] That is, the first region (A1) can be formed as a region that satisfies all of [Equation 1], [Equation 3], [Equation 5], and [Equation 6].

[0096] As illustrated in FIG. 5, the second region (A2) is formed at the bottom of the magnetic core portion (120), and the gas inlet portion (116) can be formed in the second region (A2).

[0097] The second region (A2) may be a region lower than the second line (L2) that is parallel to the lower portion of the magnetic core portion (120). For example, as shown in FIG. 5, when the gas inlet (116) is formed at the closest position on the other side (lower direction of FIG. 5) of the magnetic core portion (120), the center of the gas inlet (116) is 1 / 2 (t) of the thickness of the magnetic core portion (120). m ) the radius (r) of the gas inlet (116) at the location g ) can be formed below the second line (L2) connecting the positions that are separated by that distance.

[0098] That is, the center coordinate y1 of the gas inlet (116) can be formed within an area satisfying [Formula 2] below.

[0099] [Formula 2]

[0100]

[0101] (y: y coordinate of the inlet area, r g : Radius of the gas inlet, t m: 1 / 2 the thickness of the magnetic core)

[0102] The second region (A2) may be a region lower than the fourth line (L4), which is a straight line connecting the case where the center of the gas inlet (116) is located at the point c, which is the outermost point on the X-axis, and the case where the center of the gas inlet (116) is formed at the point e, which is the uppermost point in the negative of the Y-axis. For example, as illustrated in FIG. 5, the second region (A2) may be a region lower than the fourth line (L4), which is a straight line connecting the coordinates (r1, 0) of the point c and the coordinates (0, -(s1+r) of the point e. g )) may be an area higher than the fourth line (L4) connecting the two.

[0103] That is, the center coordinate (x1, y1) of the gas inlet (116) can be formed within an area satisfying [Formula 4] below.

[0104] [Formula 4]

[0105]

[0106] (x: x-coordinate of the inlet area, y: y-coordinate of the inlet area, r g : Radius of the gas inlet, t m : 1 / 2 of the thickness of the magnetic core, s1: inner radius of the toroidal channel, r1: outer radius of the toroidal channel)

[0107] The second region (A2) may be an outer region of the inner circle of the toroidal channel (114) since it is formed outside the inner circle of the toroidal channel (114) when the gas inlet (116) is formed in contact with the inner circle of the toroidal channel (114), and further, the second region (A2) may be formed inside the outer circle of the toroidal channel (114) when the gas inlet (116) is formed in contact with the outer circle of the toroidal channel (114), and thus it may be an inner region of the outer circle of the toroidal channel (114).

[0108] For example, as shown in FIG. 5, the second region (A2) is centered on the center coordinate (0,0) and has an inner radius (s1) of the toroidal channel (114) and a radius (r) of the gas inlet (116).g ) may be the outer region of a circular graph whose radius is the sum of the outer radius (r1) of the toroidal channel (114) and the radius (r) of the gas inlet (116). g ) can be the outer region of a circular graph with a radius of .

[0109] That is, as in the first region (A1), the center coordinates (x1, y1) of the gas inlet (116) can be formed within a region that satisfies [Equation 5] and [Equation 6] below.

[0110] [Formula 5]

[0111]

[0112] [Formula 6]

[0113]

[0114] (x: x-coordinate of the inlet area, y: y-coordinate of the inlet area, r g : radius of the gas inlet, r1: outer radius of the toroidal channel)

[0115] That is, the second region (A2) can be formed as a region that satisfies all of [Equation 2], [Equation 4], [Equation 5], and [Equation 6].

[0116] FIG. 6 is a schematic perspective view showing a plasma source (100) according to some embodiments of the present invention, and FIG. 7 is a top view showing a toroidal channel (114) according to FIG. 6.

[0117] A plasma source (100) according to another embodiment of the present invention is formed by combining two body parts (112), and two magnetic core parts (120) can be combined.

[0118] Specifically, as illustrated in FIG. 6, the reaction body (110) may be formed of at least two body parts (112) including a first body (112a) in which a first gas inlet (116a), which is one of the gas inlets (116), is formed, and a second body (112b) in which a second gas inlet (116b) is formed. At this time, the magnetic core parts (120) may be formed in at least two or more, including a first magnetic core (120a) and a second magnetic core (120b), so as to be respectively coupled to the body parts (112), and the insulating parts (130) may be formed in at least two or more, including a first insulating part (130) and a second insulating part (130), so as to be respectively coupled between the body parts (112).

[0119] The first magnetic core (120a) and the second magnetic core (120b) can be combined symmetrically to each other.

[0120] At this time, the center of the first gas inlet (116a) and the second gas inlet (116b) can be formed in any one of the first region (A1), the second region (A2), the third region (A3), and the fourth region (A4).

[0121] For example, as illustrated in FIGS. 5 and 7, the center coordinate (x1, y1) of the first gas inlet (116a) may be formed in the first region (A1) or the third region (A3). More specifically, for example, the first gas inlet (116a) may be formed in the first region (A1) to inject the process gas toward the first magnetic core (120a), or the first gas inlet (116a) may be formed in the third region (A3) to inject the process gas toward the second magnetic core (120b).

[0122] In addition, as illustrated in FIGS. 5 and 7, the center coordinates (x2, y2) of the second gas inlet (116b) may be formed in the second region (A2) or the fourth region (A4). More specifically, for example, the second gas inlet (116b) may be formed in the second region (A2) to inject the process gas toward the first magnetic core (120a), or the second gas inlet (116b) may be formed in the fourth region (A4) to inject the process gas toward the second magnetic core (120b).

[0123] The first area (A1) and the second area (A2) are the same as described above.

[0124] The third region (A3) is an upper region than the first line (L1), similar to the first region (A1), and is an outer region of the inner circle of the toroidal channel (114), and is an inner region of the outer circle of the toroidal channel (114). Accordingly, the third region (A3) may be a region that satisfies [Equation 1], [Equation 5], and [Equation 6].

[0125] In addition, the third region (A3) may be an upper region than the fifth line (L5), which is a straight line connecting the case where the center of the gas inlet (116) is located at the point c', which is the outermost point on the X-axis, and the case where the center of the gas inlet (116) is formed at the point d, which is the lowest point on the positive side of the Y-axis. For example, as illustrated in FIG. 7, the third region (A3) may be an upper region between the coordinates (-r1, 0) of the point c' and the coordinates (0, (s1+r) of the point d. g )) may be an area above the fifth line (L5) connecting the two.

[0126] That is, the center coordinate (x1, y1) of the first gas inlet (116a) can be formed within an area satisfying [Formula 7] below.

[0127] [Formula 7]

[0128]

[0129] (x: x-coordinate of the inlet area, y: y-coordinate of the inlet area, r g : Radius of the gas inlet, t m : 1 / 2 the thickness of the magnetic core, s1: inner radius of the toroidal channel, r1: outer radius of the toroidal channel)

[0130] At this time, the fifth line (L5) may be symmetrical with the third line (L3) around the Y-axis.

[0131] That is, the third region (A3) can be formed as a region that satisfies all of [Equation 1], [Equation 5], [Equation 6], and [Equation 7], and the center of the first gas inlet (116a) can be formed in the first region (A1) or the third region (A3).

[0132] The fourth region (A4) is a region lower than the second line (L2) like the second region (A2), is an outer region of the inner circle of the toroidal channel (114), and is an inner region of the outer circle of the toroidal channel (114). Accordingly, the fourth region (A4) may be a region that satisfies [Equation 2], [Equation 5], and [Equation 6].

[0133] In addition, the fourth region (A4) may be a region lower than the sixth line (L6), which is a straight line connecting the case where the center of the gas inlet (116) is located at the point c', which is the outermost point on the X-axis, and the case where the center of the gas inlet (116) is formed at the point e, which is the uppermost point in the negative of the Y-axis. For example, as illustrated in FIG. 7, the fourth region (A4) may be a region lower than the sixth line (L6), which is a straight line connecting the coordinates (-r1, 0) of the point c' and the coordinates (0, -(s1+r)) of the point e. g )) may be a lower area than the sixth line (L6) connecting them.

[0134] That is, the center coordinate (x2, y2) of the second gas inlet (116b) can be formed within an area satisfying [Formula 8] below.

[0135] [Formula 8]

[0136]

[0137] (x: x-coordinate of the inlet area, y: y-coordinate of the inlet area, r g : Radius of the gas inlet, t m : 1 / 2 of the thickness of the magnetic core, s1: inner radius of the toroidal channel, r1: outer radius of the toroidal channel)

[0138] At this time, the 6th line (L6) may be symmetrical with the 4th line (L4) around the Y-axis.

[0139] That is, the fourth region (A4) can be formed as a region that satisfies all of [Equation 2], [Equation 5], [Equation 6], and [Equation 8], and the center of the second gas inlet (116b) can be formed in the second region (A2) or the fourth region (A4).

[0140] FIG. 8 is a schematic perspective view showing a plasma source (100) according to some embodiments of the present invention, and FIG. 9 is a top view showing a toroidal channel (114) according to FIG. 8.

[0141] A plasma source (100) according to another embodiment of the present invention is formed by combining three body parts (112), and three magnetic core parts (120) can be combined.

[0142] Specifically, as illustrated in FIG. 8, the reaction body (110) may be formed of at least three body parts (112) including a first body (112a) in which a first gas inlet (116a), which is one of the gas inlets (116), is formed, a second body (112b) in which a second gas inlet (116b) is formed, and a third body (112c) in which a third gas inlet (116c) is formed.

[0143] At this time, the magnetic core portion (120) may be formed in at least three or more pieces, including a first magnetic core (120a), a second magnetic core (120b), and a third magnetic core (120c), so as to be respectively coupled to the body portion (112), and the insulating portion (130) may be formed in at least three or more pieces, including a first insulating portion (130), a second insulating portion (130), and a third insulating portion (130), so as to be respectively coupled between the body portions (112).

[0144] The first magnetic core (120a), the second magnetic core (120b), and the third magnetic core (120c) can be formed equiangularly with respect to the center of the toroidal channel (114).

[0145] At this time, the centers of the first gas inlet (116a), the second gas inlet (116b), and the third gas inlet (116c) can be formed within the inlet areas divided into the fifth area (A5), the sixth area (A6), and the seventh area (A7), respectively.

[0146] For example, as illustrated in FIG. 9, the center coordinate (x1, y1) of the first gas inlet (116a) may be formed in the fifth region (A5), the center coordinate (x2, y2) of the second gas inlet (116b) may be formed in the sixth region (A6), and the center coordinate (x3, y3) of the third gas inlet (116c) may be formed in the sixth region (A6). More specifically, for example, the first gas inlet (116a) is formed in the fifth region (A5) and can inject process gas toward the first magnetic core (120a), the second gas inlet (116b) is formed in the sixth region (A6) and can inject process gas toward the second magnetic core (120b), and the third gas inlet (116c) is formed in the seventh region (A7) and can inject process gas toward the third magnetic core (120c).

[0147] As illustrated in FIG. 9, when the magnetic core portion (120) whose center is located on the X-axis among the magnetic core portions (120) is defined as the first magnetic core (120a), the first gas inlet (116a) can be formed in either the fifth region (A5) or the seventh region (A7).

[0148] The fifth region (A5) is an upper region than the first line (L1), similar to the first region (A1), and is an outer region of the inner circle of the toroidal channel (114), and is an inner region of the outer circle of the toroidal channel (114). Accordingly, the third region (A3) may be a region that satisfies [Equation 1], [Equation 5], and [Equation 6].

[0149] In addition, the fifth region (A5) may be formed above the point where the center of the gas inlet (116) is formed of the second magnetic core (120b). For example, it may be formed above the seventh line (L7) that is parallel to the side line of the second magnetic core (120b). That is, the seventh line (L7) may be formed as the side line of the second magnetic core (120b) and has a predetermined angle (θ) inclination with respect to the X-axis, and the fifth region (A5) may be an upper region than the seventh line (L7).

[0150] That is, the center coordinate (x1, y1) of the first gas inlet (116a) can be formed within an area satisfying [Formula 9] below.

[0151] [Formula 9]

[0152]

[0153] That is, the fifth region (A5) can be formed as a region that satisfies all of [Equation 1], [Equation 5], [Equation 5], and [Equation 9].

[0154] The seventh region (A7) is a region lower than the second line (L2) like the second region (A2), is an outer region of the inner circle of the toroidal channel (114), and is an inner region of the outer circle of the toroidal channel (114). Accordingly, the seventh region (A7) may be a region that satisfies [Equation 2], [Equation 5], and [Equation 6].

[0155] In addition, the seventh region (A7) may be formed below the point where the center of the gas inlet (116) is formed of the third magnetic core (120c). For example, it may be formed below the eighth line (L8) that is parallel to the side line of the third magnetic core (120c). That is, the eighth line (L8) may be formed at an angle to the X-axis as the side line of the third magnetic core (120c), and the seventh region (A7) may be a region lower than the eighth line (L8).

[0156] At this time, when the first magnetic core (120a), the second magnetic core (120b), and the third magnetic core (120c) are formed with the same shape and size and installed at an equal angle, the seventh line (L7) and the eighth line (L8) are formed in a shape that is symmetrical with respect to the X-axis, and accordingly, the fifth region (A5) and the seventh region (A7) can be formed as regions that are symmetrical with respect to the X-axis.

[0157] The center coordinate (x1, y1) of the first gas inlet (116a) can be formed within an area satisfying [Formula 10] below.

[0158] [Formula 10]

[0159]

[0160] That is, the seventh region (A7) can be formed as a region that satisfies all of [Equation 2], [Equation 5], [Equation 6], and [Equation 10], and the center of the first gas inlet (116a) can be formed in the fifth region (A5) or the seventh region (A7).

[0161] FIG. 10 is a schematic perspective view showing a plasma source (100) according to some embodiments of the present invention, and FIG. 11 is a top view showing a toroidal channel (114) according to FIG. 10.

[0162] A plasma source (100) according to another embodiment of the present invention is formed by combining four body parts (112), and four magnetic core parts (120) can be combined.

[0163] Specifically, as illustrated in FIG. 10, the reaction body (110) may be formed of at least four body parts (112) including a first body (112a) in which a first gas inlet (116a), which is one of the gas inlets (116), is formed, a second body (112b) in which a second gas inlet (116b) is formed, a third body (112c) in which a third gas inlet (116c) is formed, and a fourth body (112d) in which a fourth gas inlet (116d) is formed.

[0164] At this time, the magnetic core portion (120) may be formed in at least four pieces, including a first magnetic core (120a), a second magnetic core (120b), a third magnetic core (120c), and a fourth magnetic core (120d), so as to be respectively coupled to the body portion (112), and the insulating portion (130) may be formed in at least four pieces, including a first insulating portion (130), a second insulating portion (130), a third insulating portion (130), and a fourth insulating portion (130), so as to be respectively coupled between the body portions (112).

[0165] The first magnetic core (120a), the second magnetic core (120b), the third magnetic core (120c), and the fourth magnetic core (120d) may be formed at equal angles based on the center of the toroidal channel (114). For example, the magnetic core portions (120) may be formed in four pieces, and the angle formed by each magnetic core portion (120) may be 90 degrees. In this case, the first magnetic core (120a) and the third magnetic core (120c) may be formed parallel to the X-axis, and the second magnetic core (120b) and the fourth magnetic core (120d) may be formed parallel to the Y-axis.

[0166] At this time, the centers of the first gas inlet (116a), the second gas inlet (116b), the third gas inlet (116c), and the fourth gas inlet (116d) can be formed within the inlet areas, which are each divided into the eighth area (A8), the ninth area (A9), the tenth area (A10), and the eleventh area (A11).

[0167] For example, as illustrated in FIG. 11, the center coordinates (x1, y1) of the first gas inlet (116a) may be formed in the eighth area (A8), the center coordinates (x2, y2) of the second gas inlet (116b) may be formed in the ninth area (A9), the center coordinates (x3, y3) of the third gas inlet (116c) may be formed in the tenth area (A10), and the center coordinates (x4, y4) of the fourth gas inlet (116d) may be formed in the eleventh area (A11).

[0168] More specifically, for example, the first gas inlet (116a) is formed in the eighth region (A8) and can inject process gas toward the first magnetic core (120a), the second gas inlet (116b) is formed in the ninth region (A9) and can inject process gas toward the second magnetic core (120b), the third gas inlet (116c) is formed in the tenth region (A10) and can inject process gas toward the third magnetic core (120c), and the fourth gas inlet (116d) is formed in the eleventh region (A11) and can inject process gas toward the fourth magnetic core (120d).

[0169] As illustrated in FIG. 11, when the magnetic core portion (120) whose center is located on the X-axis among the magnetic core portions (120) is defined as the first magnetic core (120a), the first gas inlet (116a) can be formed in either the 8th region (A8) or the 11th region (A11).

[0170] The eighth region (A8) is an upper region than the first line (L1), similar to the first region (A1), and is an outer region of the inner circle of the toroidal channel (114), and is an inner region of the outer circle of the toroidal channel (114). Accordingly, the eighth region (A8) may be a region that satisfies [Equation 1], [Equation 5], and [Equation 6].

[0171] Additionally, the eighth region (A8) may be formed in a region other than the joint portion where the second magnetic core (120b) is coupled. For example, as described above, the first magnetic core (120a) may be formed parallel to the X-axis, and the second magnetic core (120b) may be formed parallel to the Y-axis. That is, the second magnetic core (120b) is formed in the Y-axis, and the eighth region (A8) may be a region excluding the radius of the first gas inlet (116a) in a region other than the thickness of the second magnetic core (120b).

[0172] For example, as shown in FIG. 11, the eighth region (A8) is 1 / 2 (t) of the thickness of the second magnetic core (120b) in the Y-axis. m ) and the radius (r) of the first gas inlet (116a) g ) may be an outer area than the 9th line (L9) connecting points that are as far apart as that.

[0173] That is, the center coordinate (x1, y1) of the first gas inlet (116a) can be formed within an area satisfying [Formula 11] below.

[0174] [Formula 11]

[0175]

[0176] (x: x-coordinate of the inlet area, r g : Radius of the gas inlet, t m : 1 / 2 the thickness of the magnetic core)

[0177] That is, the 8th region (A8) can be formed as a region that satisfies all of [Equation 1], [Equation 5], [Equation 6], and [Equation 11].

[0178] At this time, the 9th area (A9) can be formed as an area symmetrical with the 8th area (A8) around the Y-axis.

[0179] The eleventh region (A11) is a region lower than the second line (L2), similar to the second region (A2), and is an outer region of the inner circle of the toroidal channel (114), and is an inner region of the outer circle of the toroidal channel (114). Accordingly, the eleventh region (A11) may be a region that satisfies [Equation 2], [Equation 5], and [Equation 6].

[0180] Additionally, the eleventh region (A11) may be formed in a region other than the joint portion where the fourth magnetic core (120d) is coupled. For example, as described above, the fourth magnetic core (120d) may be formed parallel to the Y-axis. That is, the fourth magnetic core (120d) is formed in the Y-axis, and the eleventh region (A11) may be a region excluding the radius of the first gas inlet (116a) in a region other than the thickness of the fourth magnetic core (120d).

[0181] For example, as shown in FIG. 11, the 11th region (A11) is 1 / 2 (t) of the thickness of the 4th magnetic core (120d) in the Y-axis. m ) and the radius (r) of the first gas inlet (116a) g ) may be an outer area than the 10th line (L10) connecting points that are at a distance apart from each other. In this case, the 10th line (L10) may be the same straight line as the 9th line (L9).

[0182] That is, the 11th region (A11) can be formed as a region satisfying [Equation 2], [Equation 5], [Equation 6], and [Equation 11], and at this time, the 10th region (A10) can be formed as a region symmetrical with the 11th region (A11) around the Y-axis.

[0183] The center of the first gas inlet (116a) may be formed in the eighth area (A8) or the eleventh area (A11), for example, as shown in FIG. 11, the first gas inlet (116a) may be formed in the eighth area (A8), the second gas inlet (116b) may be formed in the ninth area (A9), the third gas inlet (116c) may be formed in the tenth area (A10), and the fourth gas inlet (116d) may be formed in the eleventh area (A11).

[0184] Fig. 12 is a cross-sectional view showing the m-m' cross-section of the plasma source (100) of Fig. 1.

[0185] When looking at the cross-section of the toroidal channel (114) to which the magnetic core part (120) is coupled, the toroidal channel (114) formed inside the body part (112) is defined by an inner point (o') and an outer point (p') based on the center of the toroidal channel (114), and the toroidal channel (114) formed inside the part to which the magnetic core part (120) is coupled can be defined by an inner point (o) and an outer point (p).

[0186] The center of the gas inlet (116) is at a height (h) as shown in Fig. 12. m ) can be formed on the upper part of the toroidal channel (114), and the center of the gas inlet (116) is the radius (r) of the gas inlet (116) from the inner radius (s1) of the toroidal channel (114) based on the center of the reaction body (110). g ) from the point moved as far as the radius (r) of the gas inlet (116) from the outer radius (r1) of the toroidal channel (114) g ) can be formed between points that have moved as close as possible.

[0187] At this time, the thickness of the toroidal channel (114) formed inside the body part (112) and the diameter of the toroidal channel (114) formed inside the portion where the magnetic core part (120) is coupled are the same, so that the inner point (o') of the toroidal channel (114) formed inside the body part (112) and the inner point (o) of the toroidal channel (114) formed inside the portion where the magnetic core part (120) is coupled may be the same point, and the outer point (p') of the toroidal channel (114) formed inside the body part (112) and the outer point (p) of the toroidal channel (114) formed inside the portion where the magnetic core part (120) is coupled may be the same point.

[0188] That is, the center of the gas inlet (116) is the upper height (h) of the toroidal channel (114). m) can be formed, and can be formed in an inlet region that satisfies the following equation depending on the size of the toroidal channel (114).

[0189] [Formula 12]

[0190]

[0191] [Formula 13]

[0192]

[0193] (x: x-coordinate of the inlet area, r g : radius of gas inlet, s1: inner radius of toroidal channel, r1: outer radius of toroidal channel, o: inner point of magnetic core, o': inner point of toroidal channel, p: outer point of magnetic core, p': outer point of toroidal channel)

[0194] FIGS. 13 and 14 are schematic drawings showing a substrate processing device according to various embodiments of the present invention.

[0195] A substrate processing device according to one embodiment of the present invention may include a process chamber (2000), a substrate support (3000), a gas injection unit (4000), a plasma source assembly (1000), and a gas injection plate (4100), as illustrated in FIG. 13.

[0196] As illustrated in Fig. 13, a process chamber (2000) may have a reaction space (B) formed therein. The process chamber (2000) may be connected to a vacuum pump (2300) through an exhaust unit (2200) so as to form a vacuum atmosphere. Furthermore, the process chamber (2000) may include an entrance for loading a substrate (S) into or unloading the substrate (S) from the reaction space (B) and a gate (not shown) for opening and closing the entrance.

[0197] As illustrated in FIG. 13, the substrate support (3000) may be coupled to the process chamber (2000) to support the substrate (S) within the reaction space (B). For example, the substrate support (3000) may be installed in the process chamber (2000) to face the gas injection unit (4000). Furthermore, the substrate support (3000) may include a heater (not shown) for heating the substrates (S) therein. Since the substrate support (3000) is configured to place the substrate (S) thereon, it may also be called a substrate mounting unit, a susceptor, a substrate holder, etc.

[0198] The shape of the upper plate of the substrate support member (3000) generally corresponds to the shape of the substrate (S), but is not limited thereto, and may be provided in various shapes so as to stably secure the substrate (S). Furthermore, a shaft (2100) is connected to the upper plate of the substrate support member (3000), and the shaft (2100) may be connected to an external motor (not shown) so as to be able to rise and fall. Optionally, a means for maintaining airtightness, such as a bellows tube, may be connected between the shaft (2100) and the process chamber (2000).

[0199] In some embodiments, the substrate support (3000) may further include an electrostatic electrode (not shown) to apply an electrostatic force to the substrate (S) and secure it thereon. In this case, the electrostatic electrode may generate an electrostatic force using DC power.

[0200] As illustrated in FIG. 13, the gas injection unit (4000) may be coupled to the process chamber (2000) to inject process gas supplied from the outside of the process chamber (2000) into the reaction space (B). For example, the gas injection unit (4000) may be coupled to the upper portion of the process chamber (2000) so as to face the substrate support unit (3000). The gas injection unit (4000) may supply process gas, such as a source gas, a reaction gas, an inert gas, etc., onto the substrate (S) within the reaction space (B).

[0201] The gas injection unit (4000) may include a gas distribution plate (4100) for injecting process gas supplied from the outside of the process chamber (2000) into the reaction space (B).

[0202] The gas injection plate (4100) is formed at the bottom of the plasma source assembly (1000) and can inject the process gas activated by the plasma source assembly (1000) onto the substrate support (3000).

[0203] A plurality of injection holes may be formed downward in the gas injection plate (4100). Optionally, the gas injection unit (4000) may further include a middle plate, such as a blocker plate, for injecting gas between the plasma source (100) and the gas injection plate (4100).

[0204] As illustrated in FIG. 13, the plasma source assembly (1000) is for activating a process gas supplied from the outside, and may be one or more of the plasma sources (100) described above. The plasma source assembly (1000) may be coupled to the upper portion of the process chamber (2000) above the gas injection unit (4000), for example, may be coupled to the top lid of the process chamber (2000).

[0205] The plasma source assembly (1000) can supply an activated process gas to its lower portion, for example, to the internal space of the gas injection unit (4000).

[0206] For example, the plasma source assembly (1000) includes a plasma source (1100) and a gas discharge plate (1200) coupled to the lower portion of the plasma source (1100), and may be coupled to the upper portion of the process chamber (2000) to supply activated process gas to the substrate support (3000).

[0207] The gas discharge plate (1200) can be coupled to the reaction body of the plasma source (1100).

[0208] The gas discharge plate (1200) may be formed with a plurality of holes for discharging activated process gas in the gas diffusion space.

[0209] The gas discharge plate (1200) can discharge the activated process gas, i.e., radicals, downward through the plurality of holes.

[0210] The above plurality of holes may include gas discharge ports formed by penetrating the gas discharge plate (1200) and formed so that the activated process gas can be discharged to the outside of the body of the plasma source (1100) in the gas diffusion space.

[0211] The above gas discharge holes may be formed in the shape of a cylinder, cone, pyramid, etc. That is, they may be formed by penetrating the body part (112) of the plasma source (1100) from the inside to the outside with the same size, or by penetrating the body part with the hole gradually increasing in size.

[0212] Accordingly, the radicals are discharged to the outside of the body of the plasma source (1100), particles can be prevented from flowing into the gas diffusion space inside the body of the plasma source (1100), and the amount of radicals discharged can be controlled depending on the size and shape of the gas discharge ports.

[0213] A substrate processing device according to one embodiment of the present invention may include a process gas supply unit (5000).

[0214] The process gas supply unit (5000) may be individually formed to include each gas so as to be able to supply the source gas, the reaction gas, and the inert gas, respectively. At this time, in the process gas supply unit (5000), when the plasma source is ignited, the process gas may be supplied from a gas supply unit containing an inert gas such as Ar, He, H2, N2, etc.

[0215] In addition, after ignition, while maintaining plasma in the process gas supply unit (5000), the source gas (or reaction gas) and the inert gas may be supplied singly or simultaneously from each gas supply unit.

[0216] A plasma source assembly (1000) of a substrate processing device according to another embodiment of the present invention may include a first plasma source (1100a) and a second plasma source (1100b), as illustrated in FIG. 14.

[0217] The configuration of the first plasma source (1100a) is the same as described above, so redundant description is omitted.

[0218] The second plasma source (1100b) may include a body, a magnetic core, and a winding.

[0219] The body part, the magnetic core part, and the winding part of the second plasma source (1100b) may have the same configuration and effect as the body part, the magnetic core part, and the winding part of the first plasma source (1100a).

[0220] A gas inlet may be formed on the upper surface of the body of the second plasma source (1100b). At this time, the gas inlet of the second plasma source (1100b) may be formed within an inlet area formed according to the number of pieces of the body, similar to the first plasma source (1100a).

[0221] The second plasma source (1100b) may be formed inside the first plasma source (1100a). For example, as illustrated in FIG. 14, the body of the second plasma source (1100b) may be formed smaller than the body of the first plasma source (1100a) and formed inside. In this case, the gas diffusion space of the second plasma source (1100b) may be formed separately from the gas diffusion space of the first plasma source (1100a).

[0222] As illustrated in FIGS. 13 and 14, the plasma source assembly (1000) may be coupled to the upper portion of a substrate support on which a substrate (S) is mounted and rotated, and may be coupled to the upper portion of a process chamber (2000) so that radicals are supplied toward at least one substrate (S). At this time, the plasma source (1100) may be formed on the upper portion of at least one substrate (S) that is to be deposited or reacted by radicals, and may be formed on the upper portions of two or more substrates (S) among a plurality of substrates (S). For example, the plasma source (1100) may be formed above a reaction gas supply unit, and the radicals may be discharged to the substrate (S) passing through the lower portion of the plasma source (1100).

[0223] Additionally, a first plasma source (1100a) and a second plasma source (1100b) may be formed on top of one of the plurality of substrates (S).

[0224] The substrate processing device described above can be used as a thin film deposition device, such as an atomic layer deposition (ALD) device or a chemical vapor deposition (CVD) device.

[0225] According to the above substrate processing device, since the plasma source (1100) is directly connected to the gas injection unit (4000), an activated process gas, for example, radicals, can be directly supplied to the substrate (S), thereby reducing the supply path of radicals. Accordingly, when the gas injection unit (4000) is used, the recombination of radicals can be reduced, and the supply efficiency of radicals can be increased, thereby enhancing process reliability, compared to when a conventional remote plasma device is used.

[0226] While the present invention has been described with reference to the embodiments illustrated in the drawings, these are merely exemplary, and those skilled in the art will appreciate that various modifications and equivalent alternative embodiments are possible. Therefore, the true scope of technical protection of the present invention should be determined by the technical spirit of the appended claims.

Claims

1. A reaction body comprising at least one body part forming a toroidal channel formed as a gas diffusion space inside, and at least one gas inlet formed within an inlet region divided into at least a first region and a second region on the upper surface of the body part so that a process gas supplied from the outside is injected into the toroidal channel; At least one magnetic core portion arranged to surround a portion of the above body portion; At least one insulating member coupled to a portion of the above body portion; and A winding part arranged to wind the magnetic core part and inducing a magnetic force within the magnetic core part by receiving power from a power supply part; Including, The center of the gas inlet is formed within the first region or the second region, When the toroidal channel is viewed from above, the first region is formed as a region satisfying the following equation based on the magnetic core portion being located on the X-axis. The above second region is formed as a region satisfying the following equation: (x: x-coordinate of the inlet area, y: y-coordinate of the inlet area, r g : Radius of the gas inlet, t m : 1 / 2 the thickness of the magnetic core, s1: inner radius of the toroidal channel, r1: outer radius of the toroidal channel) Plasma source.

2. In paragraph 1, The above reaction body is, It is formed by at least three body parts including a first body in which a first gas inlet, which is one of the above gas inlets, is formed, a second body in which a second gas inlet is formed, and a third body in which a third gas inlet is formed, The above magnetic core part, At least three magnetic cores are formed, including a first magnetic core, a second magnetic core, and a third magnetic core, so as to be respectively coupled to the above body part, The above insulating part, A plasma source formed of at least three or more insulating parts, including a first insulating part, a second insulating part, and a third insulating part, each of which is coupled between the above body parts.

3. In paragraph 2, The above first region is formed as a region satisfying the following equation, The above second region is formed as a region satisfying the following equation: (x: x-coordinate of the inlet area, y: y-coordinate of the inlet area, r g : Radius of the gas inlet, t m : 1 / 2 the thickness of the magnetic core, s1: inner radius of the toroidal channel, r1: outer radius of the toroidal channel, θ: angle of the second magnetic core) Plasma source.

4. In paragraph 1, The above reaction body is, It is formed by at least four body parts including a first body in which a first gas inlet, which is one of the above gas inlets, is formed, a second body in which a second gas inlet is formed, a third body in which a third gas inlet is formed, and a fourth body in which a fourth gas inlet is formed, The above magnetic core part, At least four magnetic cores are formed, including a first magnetic core, a second magnetic core, a third magnetic core, and a fourth magnetic core, so as to be respectively coupled to the above body portion, The above insulating part, A plasma source formed of at least four or more insulating parts, including a first insulating part, a second insulating part, a third insulating part, and a fourth insulating part, each of which is coupled between the above body parts.

5. In paragraph 4, The above first region is formed as a region satisfying the following equation, The above second region is formed as a region satisfying the following equation: (x: x-coordinate of the inlet area, y: y-coordinate of the inlet area, r g : Radius of the gas inlet, t m : 1 / 2 the thickness of the magnetic core, s1: inner radius of the toroidal channel, r1: outer radius of the toroidal channel, θ: angle of the second magnetic core) Plasma source.

6. In paragraph 1, When looking at the cross-section of the toroidal channel to which the magnetic core portion is coupled, the inlet region is formed as a region satisfying the following equation based on the center of the reaction body. (x: x-coordinate of the inlet area, r g : radius of gas inlet, s1: inner radius of toroidal channel, r1: outer radius of toroidal channel, o: inner point of magnetic core, o': inner point of toroidal channel, p: outer point of magnetic core, p': outer point of toroidal channel) Plasma source.

7. In paragraph 1, The above gas inlet is, A plasma source in which an extension line of the gas inlet is formed to be inclined from the upper surface of the body so as to pass through the inside of the magnetic core.

8. A process chamber with a reaction space formed inside; A substrate support coupled to the process chamber to support the substrate within the reaction space; A gas injection plate is formed for injecting a process gas supplied from outside the process chamber into the reaction space, and a gas injection unit is coupled to the process chamber while facing the substrate support; and A plasma source assembly comprising a plasma source according to any one of claims 1 to 7 and a gas discharge plate coupled to a lower portion of the plasma source, the plasma source assembly being coupled to an upper portion of the process chamber to supply an activated process gas to the substrate support; A substrate processing device including:

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