Support glass substrate, laminate, method for manufacturing laminate, and method for manufacturing semiconductor package

Abstract

Provided are: a support glass substrate that has high mechanical strength and that exhibits high transmittance on the short wavelength side; a laminate; a method for manufacturing the laminate; and a method for manufacturing a semiconductor package.　This support glass substrate is for supporting a processed substrate, and has a glass composition which contains, in mol%, 47-65% of SiO2, 5-15% of Al2O3, 5-20% of B2O3, 6-25% of CaO, 1-15% of SrO, and 1-15% of BaO, and in which the molar ratio B2O3 / Al2O3 is 1 or more.

Description

Support glass substrate, laminate, laminate manufacturing method and semiconductor package manufacturing method

[0001] The present invention relates to a supporting glass substrate, a laminate, a method for manufacturing a laminate, and a method for manufacturing a semiconductor package.

[0002] Portable electronic devices such as mobile phones, notebook personal computers, and PDAs (Personal Data Assistants) are required to be smaller and lighter. Accordingly, the mounting space for semiconductor chips used in these electronic devices is severely limited, making high-density mounting of semiconductor chips a challenge. Therefore, in recent years, three-dimensional mounting technology, i.e., stacking semiconductor chips and connecting them with wiring, has been used to achieve high-density mounting of semiconductor packages.

[0003] Furthermore, conventional wafer-level packages (WLPs) are manufactured by forming bumps on a wafer and then dicing the wafer into individual pieces. However, conventional WLPs have the problem that it is difficult to increase the number of pins, and because the backside of the semiconductor chip is exposed when it is mounted, chipping of the semiconductor chip is likely to occur.

[0004] Therefore, a new WLP called fan-out WLP has been proposed, which allows for an increased number of pins and also protects the edges of the semiconductor chip, preventing chipping and other problems.

[0005] Furthermore, panel level packaging (PLP) has also been proposed as a packaging technology, which makes it possible to increase the productivity of semiconductor chips compared to WLP.

[0006] In a fan-out type WLP or PLP (hereinafter collectively referred to as a fan-out type package), for example, a plurality of semiconductor chips are arranged on a supporting glass substrate, and then molded with a resin sealing material to form a processed substrate, followed by a process of wiring one surface of the processed substrate and a process of forming solder bumps.

[0007] Furthermore, in recent years, a 2.5-dimensional or 2.n-dimensional semiconductor packaging technology called CoWoS (Chip on Wafer on Substrate) has been proposed. Unlike fan-out type packages, CoWoS has a large package size and is suitable for high-performance computing. A feature of CoWoS is that it uses an intermediate substrate called an interposer, which enables high-density wiring and closely arranging silicon dies and DRAM modules.

[0008] CoWoS includes, for example, steps of placing a silicon wafer on a supporting glass substrate, followed by forming silicon through-electrodes, forming a wiring layer, and forming solder bumps.

[0009] Furthermore, further high density packaging is being achieved by using a three-dimensional package that combines a fan-out type package or CoWoS with an SoIC (System on Integrated Chips).

[0010] These processes involve heat treatment at approximately 200° C., which may cause deformation of the encapsulant and dimensional changes in the processed substrate. If the processed substrate changes in size, it becomes difficult to form high-density wiring on one surface of the processed substrate and also difficult to form solder bumps accurately.

[0011] Under these circumstances, in order to suppress dimensional changes in the processed substrate, it has been considered to support the processed substrate using a glass substrate (see Patent Document 1).

[0012] Glass substrates generally have a surface that is easy to smooth and have high rigidity. Therefore, using a glass substrate as a support substrate allows the processed substrate to be firmly and accurately supported in the aforementioned three-dimensional mounting process. However, if the mechanical properties of the glass substrate are poor, the glass substrate is prone to breakage in the aforementioned three-dimensional mounting process. This reduces the production yield of semiconductor packages and may contaminate the aforementioned three-dimensional mounting process.

[0013] Japanese Patent Application Laid-Open No. 2023-31216

[0014] The supporting glass substrate is made of Al, which has a high Young's modulus, high environmental resistance (acid resistance, etc.), and compatibility with the thermal expansion coefficient of the semiconductor package. ２ O ３ , B ２ O ３ , SiO ２ It is preferable to use an aluminoborosilicate glass containing the following as a main component. In addition, from the viewpoint of improving the meltability of the glass, it is preferable that the aluminoborosilicate glass contains an alkaline earth oxide.

[0015] However, aluminoborosilicate glass contains SiO ２ and Al ２ O ３ However, even if alkaline earth oxides are added, the meltability of the glass is still insufficient due to the high content of crystalline oxides. As a result, the supporting glass substrate formed by melting contains unmelted crystalline foreign matter. Therefore, the aluminoborosilicate glass used for the supporting glass substrate has a problem of low productivity. This also raises the risk of a decrease in the mechanical strength of the supporting glass substrate. Specifically, in the three-dimensional mounting process, the unmelted crystalline foreign matter may be the starting point for breakage of the supporting glass substrate.

[0016] Furthermore, after processing the processed substrate, there is a process of separating the processed substrate from the glass support substrate, and during this process, laser light is irradiated onto the peeling layer through the support glass substrate. Therefore, the support glass substrate needs to have high transmittance from short wavelengths to long wavelengths. In particular, short wavelength light (e.g., 254 nm) may be used to separate the peeling layer, and in this case, high transmittance (ultraviolet transmittance) at short wavelengths is required. However, if the support glass substrate contains the above-mentioned unmelted crystalline foreign matter, light may be scattered around the crystalline foreign matter, potentially reducing the transmittance on the short wavelength side.

[0017] Furthermore, the supporting glass substrate is required to have a predetermined thermal expansion coefficient in order to match the thermal expansion coefficient of the semiconductor package. －７ ~70 x 10 －７ / °C. However, aluminoborosilicate glass is required to have a thermal expansion coefficient of SiO ２ and Al２ O ３ Since the content of alkaline earth oxides is large, the thermal expansion coefficient tends to be unduly low, and even if alkaline earth oxides are contained, it is difficult to satisfy the above range of the thermal expansion coefficient.

[0018] The present invention has been made in view of the above circumstances, and its technical object is to provide a supporting glass substrate, a laminate, a method for manufacturing a laminate, and a method for manufacturing a semiconductor package, which are made of aluminoborosilicate glass that has a high Young's modulus and excellent melting properties, thereby suppressing the precipitation of unmelted crystalline foreign matter in the glass, thereby avoiding a decrease in the mechanical strength of the resulting supporting glass substrate and a decrease in transmittance at short wavelengths. Furthermore, the present invention is to provide a supporting glass substrate, a laminate, a method for manufacturing a laminate, and a method for manufacturing a semiconductor package, which are excellent in thermal expansion coefficient matching with the semiconductor package.

[0019] As a result of extensive research, the present inventors have found that by strictly regulating the glass composition range of the supporting glass substrate, in particular by strictly regulating the range of alkaline earth oxide content in the aluminoborosilicate glass, the meltability of the glass during melting can be improved, thereby preventing the resulting supporting glass substrate from containing unmelted crystalline foreign matter, thereby solving the above-mentioned technical problems, and have proposed this finding as the present invention.

[0020] That is, the supporting glass substrate of the embodiment 1 is a supporting glass substrate for supporting a processed substrate, and has a glass composition containing, in mol %, SiO ２ 47-65%, Al ２ O ３ 5-15%, B ２ O ３ 5 to 20%, CaO 6 to 25%, SrO 1 to 15%, BaO 1 to 15%, and the molar ratio B ２ O ３ / Al ２ O ３ is 1 or more. ２ O ３ / Al ２ O ３ " is B ２ O ３ The content of Al ２ O ３This refers to the value obtained by dividing the content by the amount of the

[0021] The supporting glass substrate of Aspect 2 preferably has a glass composition in Aspect 1, with a molar ratio of SrO / BaO of 0.5 to 5. Here, "SrO / BaO" refers to the value obtained by dividing the content of SrO by the content of BaO.

[0022] The supporting glass substrate of embodiment 3 is preferably the same as embodiment 1 or 2, in that the glass composition contains, in mol %, more CaO than SrO and more CaO than BaO.

[0023] The supporting glass substrate of Aspect 4 is any one of Aspects 1 to 3, and preferably has a glass composition in which the content of CaO is larger than the content of MgO in mol %.

[0024] The supporting glass substrate of Aspect 5 is any one of Aspects 1 to 4, and preferably contains, in mol %, 0 to 5% of MgO as a glass composition.

[0025] The supporting glass substrate of Aspect 6 is any one of Aspects 1 to 5, wherein the glass composition contains, in mol %, Li ２ O + Na ２ O+K ２ It is preferable that the content of "Li is 0 to 1%. ２ O + Na ２ O+K ２ "O" means Li ２ O and Na ２ O and K ２ The total amount of O.

[0026] The supporting glass substrate of Aspect 7 is any one of Aspects 1 to 6, wherein the glass composition contains, in mol %, Na ２ It is preferable that O is contained in an amount of 0 to 1%.

[0027] The supporting glass substrate of Aspect 8 is any one of Aspects 1 to 7, wherein the glass composition contains, in mol %, SnO ２ It is preferable that the content is 0 to 1%.

[0028] The supporting glass substrate of Aspect 9 is any one of Aspects 1 to 8, wherein the glass composition contains, in mol %, ZrO ２ It is preferable that the content is 0 to 1%.

[0029] The supporting glass substrate of Aspect 10 preferably has a Young's modulus of 70 GPa or more in any one of Aspects 1 to 9. Here, the "Young's modulus" is a value measured by a bending resonance method.

[0030] The supporting glass substrate of Aspect 11 is any one of Aspects 1 to 10, wherein the average thermal expansion coefficient in the temperature range of 30 to 380° C. is 40×10 －７ ~70 x 10 －７ / ° C. Here, the "average thermal expansion coefficient in the temperature range of 30 to 380° C." is a value measured with a dilatometer.

[0031] The supporting glass substrate of Aspect 12 is any one of Aspects 1 to 11, wherein the liquidus viscosity is 10 ３．５ Preferably, the viscosity is dPa·s or more. Here, the "liquidus viscosity" is the viscosity at the liquidus temperature, and can be measured by a platinum ball pulling method. The "liquidus temperature" can be calculated by placing glass powder that has passed through a standard sieve of 30 mesh (500 μm) and remains on a 50 mesh (300 μm) sieve in a platinum boat, and then holding the boat in a temperature gradient furnace for 24 hours to measure the temperature at which crystals precipitate. The liquidus viscosity is an index of moldability, and the higher the liquidus viscosity, the better the moldability.

[0032] The supporting glass substrate of Aspect 13 is a glass substrate having a high temperature viscosity of 1000 kJ / cm2 or more in any one of Aspects 1 to 12. ２．５ It is preferable that the temperature at 10 dPa·s is less than 1400°C. ２．５ The "temperature at 10 dPa·s" can be measured by the platinum sphere pulling method. ２．５ The temperature at dPa·s corresponds to the melting temperature, and the lower this temperature is, the more improved the meltability is, and the more likely it is that unmelted crystalline foreign matter will be prevented from precipitating from the glass melt during melting.

[0033] The supporting glass substrate of Aspect 14 is preferably any one of Aspects 1 to 13, and has a transmittance including reflection loss at 254 nm, converted into a thickness of 1 mm, of 5% or more.

[0034] The supporting glass substrate of Aspect 15 is preferably in any one of Aspects 1 to 14, having a wafer shape with a diameter of 100 to 500 mm, a thickness of less than 2.0 mm, a total thickness variation (TTV) of 5 μm or less, and a warpage of 60 μm or less. Here, the "total thickness variation (TTV)" can be measured, for example, by a Bow / Warp measuring device SBW-331M / Ld manufactured by Kobelco Research Institute, Ltd. The "warpage amount" refers to the sum of the absolute value of the maximum distance between the highest point and the least-squares focal plane on the entire supporting glass substrate and the absolute value of the distance between the lowest point and the least-squares focal plane, and can be measured, for example, by a Bow / Warp measuring device SBW-331M / Ld manufactured by Kobelco Research Institute, Ltd.

[0035] The supporting glass substrate of Aspect 16 is, in any one of Aspects 1 to 14, preferably has a substantially rectangular shape with at least one side of 300 mm or more, a thickness of less than 2.0 mm, a total thickness deviation of 5 μm or less, and a warpage of 60 μm or less. Here, the "total thickness deviation (TTV)" can be measured, for example, by a Bow / Warp measuring device SBW-331M / Ld manufactured by Kobelco Research Institute, Ltd. The "warpage amount" refers to the sum of the absolute value of the maximum distance between the highest point and the least-squares focal plane in the entire supporting glass substrate and the absolute value of the distance between the lowest point and the least-squares focal plane, and can be measured, for example, by a Bow / Warp measuring device SBW-331M / Ld manufactured by Kobelco Research Institute, Ltd.

[0036] The supporting glass substrate of Aspect 17 is preferably used for supporting a fan-out type wafer level package or a fan-out type panel level package in any one of Aspects 1 to 16.

[0037] The laminate of aspect 18 is a laminate including at least a processed substrate and a supporting glass substrate for supporting the processed substrate, characterized in that the supporting glass substrate is the supporting glass substrate of any one of aspects 1 to 17.

[0038] The laminate of Aspect 19 is preferably the laminate of Aspect 18, wherein the processed substrate includes at least a semiconductor chip molded with an encapsulant.

[0039] The method for manufacturing a laminate of aspect 20 is characterized by comprising the steps of: preparing a support glass substrate of any one of aspects 1 to 17; preparing a processed substrate; and stacking the support glass substrate and the processed substrate to obtain a laminate.

[0040] The method for manufacturing a semiconductor package of Aspect 21 preferably includes the steps of preparing the laminate of Aspect 18 or Aspect 19, and performing a processing treatment on the processing substrate.

[0041] In the method for manufacturing a semiconductor package of Aspect 22, in Aspect 21, the processing step preferably includes a step of wiring one surface of the processing substrate.

[0042] In the method for manufacturing a semiconductor package of Aspect 23, in Aspect 21 or Aspect 22, the processing step preferably includes a step of forming solder bumps on one surface of the processing substrate.

[0043] According to the present invention, it is possible to provide a supporting glass substrate, a laminate, a method for manufacturing a laminate, and a method for manufacturing a semiconductor package, which can avoid a decrease in the mechanical strength and transmittance at short wavelengths of the resulting supporting glass substrate by suppressing the generation of unmelted crystalline foreign matter in the glass due to the aluminoborosilicate glass having a high Young's modulus and excellent melting property.Furthermore, it is possible to provide a supporting glass substrate, a laminate, a method for manufacturing a laminate, and a method for manufacturing a semiconductor package, which have excellent compatibility of the thermal expansion coefficient with the semiconductor package.

[0044] 1 is a conceptual perspective view showing an example of a laminate of the present invention. 2 is a conceptual cross-sectional view showing a manufacturing process of a fan-out type package.

[0045] The supporting glass substrate of the present invention has a glass composition containing, in mol %, SiO ２ 47-65%, Al ２ O ３ 5-15%, B ２ O ３5 to 20%, CaO 6 to 25%, SrO 1 to 15%, BaO 1 to 15%, and the molar ratio B ２ O ３ / Al ２ O ３ is 1 or more. The reasons for limiting the content of each component as described above are as follows. In the description of the content of each component, % indicates mol %. Furthermore, unless otherwise specified, in this specification, a numerical range indicated using "to" means a range that includes the numerical values ​​before and after "to" as the minimum and maximum values, respectively.

[0046] SiO ２ is the main component that forms the skeleton of glass. ２ When the content of SiO is low, vitrification becomes difficult, the Young's modulus decreases, the acid resistance decreases, and the thermal expansion coefficient increases unduly. ２ When the content of SiO is large, vitrification becomes easy, the Young's modulus increases, and acid resistance improves, but the thermal expansion coefficient decreases unduly, the high-temperature viscosity increases, and meltability and moldability tend to decrease. ２ When the content of SiO in the glass is large, unmelted crystalline foreign matter is likely to be generated in the glass during melting or forming of the glass, and the mechanical strength of the supporting glass substrate is reduced, and the transmittance at short wavelengths is also reduced. In addition, devitrified crystals such as cristobalite are likely to precipitate from the glass, which makes it easier for the liquidus temperature to rise and reduces the productivity of the supporting glass substrate. Therefore, the SiO content in the glass is ２ The content is 47% or more, preferably 49% or more, 51% or more, particularly preferably 53% or more, and 65% or less, preferably 63% or less, 61% or less, particularly preferably 59% or less.

[0047] Al ２ O ３ is a component that forms the glass skeleton. ２ O ３ When the content of Al is small, the Young's modulus is likely to decrease and the acid resistance is likely to decrease. ２ O ３When the content of Al is large, meltability and formability tend to decrease, and unmelted crystalline foreign matter tends to be generated in the glass during melting and forming of the glass, resulting in a decrease in the mechanical strength of the supporting glass substrate and a decrease in the transmittance at short wavelengths. In addition, devitrified crystals such as mullite tend to precipitate in the glass, which tends to increase the liquidus temperature and reduce the productivity of the supporting glass substrate. Therefore, the Al content in the glass is ２ O ３ The content is 5% or more, preferably 6% or more, 7% or more, particularly preferably 8% or more, and 15% or less, preferably 14% or less, 13% or less, particularly preferably 12% or less.

[0048] B ２ O ３ is a component that improves meltability and devitrification resistance. Therefore, in aluminoborosilicate glass, B in the glass ２ O ３ By adjusting the content of B appropriately, it is possible to suppress the generation of unmelted crystalline foreign matter in the glass during melting and forming of the glass, and to suppress the precipitation of devitrified crystals such as cristobalite and mullite from the glass. ２ O ３ If the content of B is too high, the Young's modulus decreases and the acid resistance decreases. ２ O ３ The content is 5% or more, preferably 6% or more, 7% or more, particularly preferably 8% or more, and 20% or less, preferably 18% or less, 16% or less, particularly preferably 14% or less.

[0049] Molar ratio B ２ O ３ / Al ２ O ３ is 1 or more, preferably 1.1 or more, 1.2 or more, and particularly preferably 1.3 or more. ２ O ３ / Al ２ O ３ When the molar ratio B is within the above range, it becomes easier to obtain the effect of suppressing the generation of unmelted crystalline foreign matter and the precipitation of devitrified crystals such as cristobalite and mullite during melting and forming of the glass. ２ O ３ / Al ２ O ３ The upper limit of the molar ratio B in the glass is preferably 2 or less, more preferably 1.8 or less. ２ O ３ / Al ２ O ３ If the value exceeds 2, the Young's modulus of the glass tends to decrease and the acid resistance tends to decrease.

[0050] CaO is a component that increases Young's modulus and thermal expansion coefficient. However, if the CaO content in the glass is too high, unmelted crystalline foreign matter is generated and crystals such as anorthite are likely to precipitate during melting and forming of the glass. If the supporting glass substrate contains unmelted crystalline foreign matter or if devitrified crystals such as anorthite precipitate from the supporting glass substrate, the mechanical strength of the supporting glass substrate decreases and the transmittance at short wavelengths also decreases. Therefore, the CaO content in the glass is 6% or more, preferably 8% or more, 10% or more, or 12% or more, particularly preferably 14% or more and 25% or less, preferably 24% or less, 23% or less, and particularly preferably 22% or less.

[0051] SrO is a component that increases devitrification resistance, Young's modulus, and thermal expansion coefficient, and also reduces high-temperature viscosity to improve meltability. Therefore, it is easier to achieve the effect of suppressing the generation of unmelted crystalline foreign matter during glass melting and molding. However, if the SrO content in the glass is too high, the balance of the glass composition is lost, and devitrification resistance is likely to decrease. Therefore, the SrO content in the glass is 1% or more, preferably 2% or more, 3% or more, particularly preferably 4% or more, and 15% or less, preferably 14% or less, 13% or less, particularly preferably 12% or less.

[0052] BaO is a component that increases devitrification resistance, Young's modulus, and thermal expansion coefficient, and also reduces high-temperature viscosity to improve meltability. Therefore, it is easier to achieve the effect of suppressing the generation of unmelted crystalline foreign matter during glass melting and molding. However, if the BaO content in the glass is too high, the balance of the glass composition is lost, and devitrification resistance is likely to decrease. Therefore, the BaO content in the glass is 1% or more, preferably 2% or more, 3% or more, particularly preferably 4% or more, and 15% or less, preferably 14% or less, 13% or less, particularly preferably 12% or less.

[0053] The molar ratio SrO / BaO is preferably at least 0.5, at least 0.6, particularly preferably at least 0.7, and is preferably at most 5, at most 4, particularly preferably at most 3. When the molar ratio SrO / BaO in the glass is within the above range, the high-temperature viscosity decreases and the meltability improves, making it easier to obtain the effect of suppressing the generation of unmelted crystalline foreign matter during melting or forming of the glass, and also improving the devitrification resistance of the glass.

[0054] MgO is a component that increases Young's modulus and thermal expansion coefficient. Furthermore, among alkaline earth metal oxides, it is a component that significantly increases Young's modulus. However, if the MgO content in the glass is too high, crystals such as cordierite are likely to precipitate, and devitrification resistance is likely to decrease. Therefore, the MgO content in the glass is preferably 0% or more, 0.1% or more, particularly preferably 0.5% or more, and preferably 5% or less, 3% or less, particularly preferably 1% or less.

[0055] If SrO or BaO is contained in an excessive amount, the density of the glass becomes unduly high. This increases the weight per unit area of ​​the resulting supporting glass substrate, making it difficult to handle during the mounting process. Furthermore, the thermal expansion coefficient of the glass increases. Therefore, when alkaline earth oxides are contained in the glass, it is preferable that the CaO content be greater than the SrO content, and that the CaO content be greater than the BaO content, within the range that does not cause the precipitation of unmelted crystalline foreign matter during melting or forming of the glass, and does not cause devitrification crystallization such as anorthite from the supporting glass substrate.

[0056] Furthermore, MgO tends to reduce the devitrification resistance of the glass more easily than CaO. Therefore, when alkaline earth oxides are contained in the glass, the content of CaO is preferably greater than the content of MgO.

[0057] Alkali metal oxide (Li ２ O, Na ２ O and K ２ O) is a component that enhances meltability. However, if the content of alkali metal oxides in glass is too high, the thermal expansion coefficient is likely to increase significantly. Furthermore, in fan-out type packages and CoWoS, after arranging multiple semiconductor chips on a supporting glass substrate and molding them with a resin sealing material to form a processed substrate, there is a risk that alkali ions in the glass will diffuse into the semiconductor chips in the process of wiring one surface of the processed substrate, the process of forming solder bumps, etc. Therefore, Li in the glass ２ O + Na ２ O+K ２ The O content is preferably 1% or less, 0.5% or less, or 0.1% or less, and particularly preferably less than 0.05%.

[0058] Li ２ O is a component that improves meltability. However, Li in the glass ２ If the O content is too high, the thermal expansion coefficient is likely to increase significantly. Furthermore, in fan-out type packages and CoWoS, after arranging a plurality of semiconductor chips on a supporting glass substrate and molding them with a resin sealing material to form a processed substrate, there is a risk that Li ions will diffuse into the semiconductor chips during the process of wiring one surface of the processed substrate, the process of forming solder bumps, etc. Therefore, Li in the glass ２ The O content is preferably 1% or less, 0.5% or less, or 0.1% or less, and particularly preferably less than 0.05%.

[0059] Na ２ O is a component that improves meltability. However, Na in glass ２If the O content is too high, the thermal expansion coefficient is likely to increase significantly. Furthermore, in fan-out type packages and CoWoS, after arranging multiple semiconductor chips on a supporting glass substrate and molding them with a resin sealing material to form a processed substrate, there is a risk that Na ions in the glass will diffuse into the semiconductor chips in the process of wiring one surface of the processed substrate, the process of forming solder bumps, etc. ２ The O content is preferably 1% or less, 0.5% or less, or 0.1% or less, and particularly preferably less than 0.05%.

[0060] K ２ O is a component that improves meltability. ２ If the O content is too high, the thermal expansion coefficient is likely to increase significantly. Furthermore, in fan-out type packages and CoWoS, after arranging multiple semiconductor chips on a supporting glass substrate and molding them with a resin sealing material to form a processed substrate, there is a risk that K ions in the glass will diffuse into the semiconductor chips in the process of wiring one surface of the processed substrate, forming solder bumps, etc. Therefore, the K ions in the glass ２ The O content is preferably 1% or less, 0.5% or less, or 0.1% or less, and particularly preferably less than 0.05%.

[0061] SnO ２ is a component that has a good fining effect in the high temperature range and also reduces high-temperature viscosity. ２ The content of SnO is preferably 0% or more, 0.001% or more, 0.01% or more, particularly preferably 0.05% or more, and is preferably 2% or less, 1% or less, 0.9% or less, particularly preferably 0.7% or less. ２ If the content is too high, SnO ２ Devitrified crystals of SnO are easily precipitated. ２ If the content is too small, it becomes difficult to obtain the above effects.

[0062] ZrO ２ is a component that improves weather resistance, Young's modulus, and crack resistance. ２If the content of ZrO in the glass is large, the glass is likely to devitrify, and since the introduced raw materials are difficult to melt, there is a risk that unmelted crystalline foreign matter will be contained in the glass during melting and forming of the glass. ２ The content of is preferably 1% or less, 0.5% or less, 0.1% or less, particularly preferably less than 0.05%.

[0063] In addition to the above components, other components may be incorporated into the glass as optional components. From the viewpoint of accurately enjoying the effects of the present invention, the total content of other components other than the above components is preferably 15% or less, 10% or less, 5% or less, and particularly preferably less than 1%.

[0064] ZnO is a component that reduces high-temperature viscosity and significantly improves meltability and formability, and also improves weather resistance. However, if the ZnO content is too high, the glass is prone to devitrification. Therefore, the ZnO content in the glass is preferably 3% or less, 2% or less, or 1% or less, and particularly preferably less than 0.1%.

[0065] Fe ２ O ３ is a component that can be introduced as an impurity component or a fining component. ２ O ３ If the content of Fe is too high, the ultraviolet transmittance may decrease. ２ O ３ If the content of Fe in the glass is too high, it becomes difficult to properly adhere and detach the processing substrate and the supporting glass substrate via the resin layer and the release layer. ２ O ３ The content of is preferably 0.05% or less, 0.03% or less, 0.02% or less, and particularly preferably less than 0.0001%. ２ O ３ " includes divalent iron oxide and trivalent iron oxide, and divalent iron oxide is Fe ２ O ３ Other oxides will be treated in the same manner, with the oxides shown as the standard.

[0066] TiO ２is a component that can be introduced as an impurity component. ２ If the content of TiO is too high, the ultraviolet transmittance may decrease. ２ If the content of TiO in the glass is too high, it becomes difficult to properly adhere and detach the processing substrate and the supporting glass substrate via the resin layer and the release layer. ２ The content of is preferably 0.05% or less, 0.03% or less, 0.02% or less, and particularly preferably less than 0.0001%.

[0067] As a fining agent, As ２ O ３ , Sb ２ O ３ However, from an environmental point of view, it is preferable to reduce these components as much as possible. ２ O ３ , Sb ２ O ３ The content of each of these elements is preferably 1% or less, 0.5% or less, or 0.1% or less, and particularly preferably less than 0.05%.

[0068] SO ３ is a component that has a fining effect. ３ The content of SO is preferably 1% or less, 0.5% or less, 0.1% or less, and particularly preferably less than 0.01%. ３ If the content is too high, SO ２ Reboiling is more likely to occur.

[0069] Furthermore, as long as the glass properties are not impaired, powders of metals such as F, C, Al, and Si may be incorporated into the glass as a fining agent up to a content of less than 1% each. ２ etc. may be incorporated up to less than 1%, but care must be taken to avoid a decrease in ultraviolet transmittance.

[0070] Cl is a component that promotes glass melting. Introducing Cl into the glass composition can lower the melting temperature and promote fining, which in turn makes it easier to reduce melting costs and extend the life of glass-making furnaces. However, if the Cl content is too high, there is a risk of corrosion of metal parts around the glass-making furnace. Therefore, the Cl content in the glass is preferably 3% or less, 1% or less, or 0.5% or less, and particularly preferably less than 0.1%.

[0071] P ２ O ５ is a component that can suppress the precipitation of devitrified crystals. ２ O ５ When a large amount of P is introduced, the glass is more likely to undergo phase separation. ２ O ５ The content is preferably 15% or less, 10% or less, 5% or less, 2.5% or less, 1.5% or less, 0.5% or less, and particularly preferably less than 0.3%.

[0072] Y in glass ２ O ３ , Nb ２ O ５ , La ２ O ３ have the effect of increasing the strain point, Young's modulus, etc. However, if the content of each of these components exceeds 0.5%, particularly 1%, there is a risk that raw material costs and product costs will rise.

[0073] MoO ３ is a component that can be introduced as an impurity or a phase separation suppressing component. Mo is a component that can be contained in the electrode in the melting process, and MoO ３ is dissolved and incorporated into the molten glass. ３ When a large amount of MoO is introduced, the transmittance tends to decrease. ３ The content of is preferably 0.01% or less, 0.007% or less, 0.006% or less, and particularly preferably less than 0.002%.

[0074] The supporting glass substrate of the present invention preferably has the following properties.

[0075] The average thermal expansion coefficient in the temperature range of 30 to 380°C is preferably 40 x 10 －７ / ℃ or more, 42 × 10 －７ / ℃ or more, 44 x 10 －７ / °C or more, particularly preferably 45 x 10 －７ / °C or more, preferably 70 x 10 －７ / ℃ or less, 65 x 10 －７ / ℃ or less, 62 x 10 －７ / °C or less, particularly preferably 60 x 10 －７ If the average thermal expansion coefficient in the temperature range of 30 to 380°C is outside the above range, it becomes difficult to match the thermal expansion coefficient of the semiconductor chip, and dimensional changes (particularly warpage) of the processing substrate on the supporting glass substrate are likely to occur during processing.

[0076] The Young's modulus is preferably 70 GPa or more, 73 GPa or more, 75 GPa or more, particularly preferably 77 GPa or more. If the Young's modulus is too low, it becomes difficult to maintain the rigidity of the laminate, and deformation, warping, breakage, etc. of the processed substrate are likely to occur. The upper limit of the Young's modulus is not particularly limited, but may be, for example, 150 GPa or less, particularly 130 GPa or less.

[0077] The liquidus viscosity is preferably 10 ３．５ dPa·s or more, 10 ４．０ dPa·s or more, particularly preferably 10 ４．３ In this way, devitrification crystals are less likely to precipitate during forming, making it easier to form a glass substrate by the down-draw method, particularly the overflow down-draw method. The upper limit of the liquidus viscosity is not particularly limited, but may be, for example, 10 ８．０ It may be dPa·s or less.

[0078] High temperature viscosity 10 ２．５ The temperature at viscosity dPa·s is preferably 1400°C or less, 1380°C or less, 1360°C or less, 1340°C or less, 1320°C or less, 1300°C or less, and particularly preferably 1280°C or less. ２．５When the temperature at viscosity dPa·s becomes high, the melting property decreases, and the manufacturing cost of the glass substrate rises. More specifically, unmelted crystalline foreign matter is likely to precipitate from the glass melt during melting, and the mechanical strength and transmittance of the obtained supporting glass substrate may decrease, making it unsuitable for the supporting glass substrate. ２．５ The lower limit of the temperature at dPa·s is not particularly limited, but may be, for example, 1000° C. or higher, particularly 1050° C. or higher.

[0079] The transmittance T254, including reflection loss at 254 nm, converted into a thickness of 1 mm, is preferably 5% or more, 10% or more, 20% or more, or 25% or more, and particularly preferably 30% or more. If T254 is too low, it becomes difficult to peel the processed substrate from the supporting glass substrate by light on the short wavelength side after processing the processed substrate. The upper limit of T254 is not particularly limited, but may be, for example, 99.9% or less, 99% or less, 98% or less, or particularly 95% or less.

[0080] In the present invention, the temperature at which the slope of the thermal expansion curve of the glass changes is regarded as the glass transition point. The glass transition point is preferably 630°C or higher, particularly preferably 650°C or higher. If the glass transition point is too low, the glass will flow too much, making it difficult to mold into a desired shape. If the glass transition point is too low, the glass will be prone to deformation when used at high temperatures. There is no particular upper limit to the glass transition point, but it may be 800°C or lower, particularly 750°C or lower.

[0081] In the present invention, the temperature at which the slope of the thermal expansion curve of glass changes at temperatures above the glass transition point is considered to be the deformation point. The deformation point is preferably 700°C or higher, particularly preferably 720°C or higher. If the deformation point is too low, the glass will flow too much, making it difficult to mold into a desired shape. In addition, the glass will be prone to deformation when used at high temperatures. There are no particular limitations on the upper limit of the deformation point, but it may be 800°C or lower, particularly 750°C or lower.

[0082] The strain point is preferably 570°C or higher, 590°C or higher, and particularly preferably 610°C or higher. If the strain point is too low, unintended deformation of the glass is likely to occur when a functional film is formed on the glass surface at high temperatures. The upper limit of the strain point is not particularly limited, but may be, for example, 800°C or lower, particularly 750°C or lower.

[0083] Annealing point (when the viscosity of the glass is about 10 １３ The viscosity (temperature corresponding to dPa s) is preferably 600°C or higher, particularly preferably 650°C or higher. If the annealing point is too low, the glass will be more likely to crack when formed. If the annealing point is too low, the glass will be more likely to shrink over time, which will lead to adverse effects such as poor dimensional accuracy. The upper limit of the annealing point is not particularly limited, but may be 750°C or lower, particularly 700°C or lower.

[0084] Softening point (viscosity of glass is about 10 ７．６ The softening point (temperature corresponding to viscosity (dPa s)) is preferably 800°C or higher, particularly preferably 820°C or higher. If the softening point is too low, the glass will be prone to deformation during high-temperature use. There is no particular upper limit to the softening point, but it may be 950°C or lower, particularly 900°C or lower.

[0085] The density is preferably 3.0 g / cm ３ Particularly preferably 2.9 g / cm or less ３ If the density is too high, the weight per unit area increases, making handling difficult. The lower limit of the density is not particularly limited, but is, for example, 2.0 / cm ３ or more, especially 2.2 g / cm ３ It may be more than that.

[0086] The liquidus temperature is preferably 1100°C or lower, particularly preferably 1080°C or lower. This makes it easier to prevent the generation of devitrification crystals during glass production, which reduces productivity. The lower limit of the liquidus temperature is not particularly limited, but may be 850°C or higher, particularly 900°C or higher. The liquidus temperature is an index of devitrification resistance, and the lower the liquidus temperature, the better the devitrification resistance. The liquidus temperature TL is a value measured by microscopic observation of a glass powder that passes through a standard 30 mesh (500 μm) sieve and remains on a 50 mesh (300 μm) sieve, after which the glass powder is placed in a platinum boat and held in a temperature gradient furnace for 24 hours. The liquidus viscosity log η is a value measured by measuring the viscosity of the glass at the liquidus temperature TL using a platinum ball pull-up method.

[0087] The supporting glass substrate of the present invention preferably has a wafer shape with a diameter of 100 to 500 mm, a thickness of less than 2.0 mm, a total thickness variation (TTV) of 5 μm or less, and a warpage of 60 μm or less. Preferred shapes are described below.

[0088] The supporting glass substrate of the present invention is preferably in the form of a wafer, with a diameter of 100 to 500 mm, particularly 150 to 450 mm. This makes it easier to apply to the manufacturing process of fan-out type WLP or CoWoS. If necessary, it may be processed into other shapes, such as a rectangular shape. This makes it easier to apply to the manufacturing process of fan-out type PLP.

[0089] The plate thickness is preferably less than 2.0 mm, 1.5 mm or less, 1.2 mm or less, 1.1 mm or less, 1 mm or less, particularly preferably 0.9 mm or less. The thinner the plate thickness, the lighter the mass of the laminate, thereby improving handleability. On the other hand, if the plate thickness is too thin, the strength of the supporting glass substrate itself decreases, making it difficult to function as a supporting substrate. Therefore, the plate thickness is preferably 0.1 mm or more, 0.2 mm or more, 0.3 mm or more, 0.4 mm or more, 0.5 mm or more, 0.6 mm or more, particularly preferably more than 0.7 mm.

[0090] The total thickness variation (TTV) is preferably 5 μm or less, 4 μm or less, 3 μm or less, 2 μm or less, or 1 μm or less, and particularly preferably 0.1 to less than 1 μm. The arithmetic mean roughness Ra is preferably 20 nm or less, 10 nm or less, 5 nm or less, 2 nm or less, or 1 nm or less, and particularly preferably 0.5 nm or less. The lower limit is not particularly limited, but may be, for example, 0.1 nm or more. The higher the surface precision, the easier it is to improve the processing precision. In particular, wiring precision can be improved, enabling high-density wiring. In addition, the strength of the supporting glass substrate is improved, making the supporting glass substrate and laminate less susceptible to breakage. Furthermore, the number of times the supporting glass substrate can be reused can be increased. The "arithmetic mean roughness Ra" can be measured using a stylus surface roughness meter or an atomic force microscope (AFM).

[0091] The supporting glass substrate of the present invention is preferably formed by an overflow downdraw method and then has its surface polished, which makes it easier to regulate the total thickness variation (TTV) to less than 2 μm, 1.5 μm or less, 1 μm or less, particularly 0.1 to less than 1 μm.

[0092] The amount of warpage is preferably 60 μm or less, 55 μm or less, 50 μm or less, or 1 to 45 μm, and particularly preferably 5 to 40 μm. The smaller the amount of warpage, the easier it is to improve the precision of processing. In particular, since wiring precision can be improved, high-density wiring becomes possible.

[0093] The circularity is preferably 1 mm or less, 0.1 mm or less, 0.05 mm or less, and particularly preferably 0.03 mm or less. There is no particular lower limit, but it may be, for example, 0.001 mm or more. The smaller the circularity, the easier it is to apply to the manufacturing process of fan-out type WLP or CoWoS. Note that "circularity" is the value obtained by subtracting the minimum value from the maximum value of the outer shape of the wafer, excluding the notch portion.

[0094] The supporting glass substrate of the present invention preferably has a notch portion (notch-shaped alignment portion), and the deep portion of the notch portion is more preferably substantially circular or substantially V-groove-shaped in plan view. This makes it easier to fix the position of the supporting glass substrate by abutting a positioning member such as a positioning pin against the notch portion of the supporting glass substrate. As a result, alignment of the supporting glass substrate and the processing substrate becomes easier. In particular, forming a notch portion in the processing substrate and abutting a positioning member thereon makes it easier to align the entire laminate.

[0095] The support glass substrate of the present invention is preferably formed by a downdraw method, particularly an overflow downdraw method. The overflow downdraw method is a method for producing a glass substrate by overflowing molten glass from both sides of a heat-resistant trough-shaped structure, and drawing the overflowed molten glass downward while joining at the lower end of the trough-shaped structure. In the overflow downdraw method, the surface that will become the surface of the glass substrate does not contact the trough-shaped refractory and is formed in a free surface state. Therefore, by a small amount of polishing, the total thickness variation (TTV) can be reduced to less than 2 μm, particularly less than 1 μm. As a result, the manufacturing cost of the glass substrate can be reduced.

[0096] The supporting glass substrate of the present invention is preferably not subjected to ion exchange treatment and preferably does not have a compressive stress layer on its surface. Since ion exchange treatment increases the manufacturing cost of the supporting glass substrate, not performing the ion exchange treatment makes it possible to reduce the manufacturing cost of the supporting glass substrate. Furthermore, since ion exchange treatment makes it difficult to reduce the total thickness variation (TTV) of the supporting glass substrate, not performing the ion exchange treatment makes it easier to resolve such a problem. Note that the supporting glass substrate of the present invention does not exclude an embodiment in which an ion exchange treatment is performed to form a compressive stress layer on its surface. Focusing solely on the viewpoint of increasing mechanical strength, it is preferable to perform ion exchange treatment to form a compressive stress layer on its surface.

[0097] The laminate of the present invention is a laminate comprising at least a processing substrate and a supporting glass substrate for supporting the processing substrate, characterized in that the supporting glass substrate is the above-mentioned supporting glass substrate. Furthermore, it is preferable that the processing substrate comprises at least a semiconductor chip molded with a sealing material. A glass substrate satisfying the above-mentioned configuration has a high Young's modulus, which makes it easy to maintain the rigidity of the laminate, and can suppress the occurrence of deformation, warping, breakage, etc. of the processing substrate. Therefore, the laminate of the present invention can suppress a decrease in the reliability of the processing of the processing substrate.

[0098] The laminate of the present invention preferably has an adhesive layer between the processing substrate and the supporting glass substrate. The adhesive layer is preferably a resin, such as a thermosetting resin or a photocurable resin (particularly a UV-curable resin). It is also preferable that the adhesive layer has heat resistance sufficient to withstand the heat treatments in the manufacturing process of fan-out type packages and CoWoS. This makes the adhesive layer less likely to melt during the manufacturing process of fan-out type packages and CoWoS, thereby improving the accuracy of the processing process. UV-curable tape can also be used as the adhesive layer to easily fix the processing substrate and the supporting glass substrate.

[0099] The laminate of the present invention preferably further has a release layer between the processing substrate and the supporting glass substrate, more specifically between the processing substrate and the adhesive layer, or between the supporting glass substrate and the adhesive layer. In this way, after performing a predetermined processing treatment on the processing substrate, the processing substrate can be easily peeled off from the supporting glass substrate. From the viewpoint of productivity, peeling of the processing substrate is preferably performed by irradiating light such as ultraviolet laser light.

[0100] The release layer is made of a material that undergoes "intralayer peeling" or "interfacial peeling" when irradiated with light such as laser light. In other words, when irradiated with light of a certain intensity, the interatomic or intermolecular bonding force between atoms or molecules disappears or decreases, causing ablation or the like, resulting in peeling. When irradiated with light, the components contained in the release layer may become gaseous and be released, leading to separation, or the release layer may absorb light, become gaseous, and release the vapor, leading to separation.

[0101] In the laminate of the present invention, the supporting glass substrate is preferably larger than the processing substrate, so that when the processing substrate and the supporting glass substrate are supported, even if their centers are slightly spaced apart, the edge of the processing substrate is less likely to protrude from the supporting glass substrate.

[0102] The method for producing a laminate of the present invention is characterized by comprising the steps of preparing the support glass substrate, preparing a processing substrate, and laminating the support glass substrate and the processing substrate to obtain a laminate, thereby producing a laminate that can suppress a decrease in reliability of processing of the processing substrate.

[0103] The method for manufacturing a semiconductor package of the present invention is characterized by comprising the steps of preparing the above-described laminate and processing the processing substrate. In other words, the method for manufacturing a semiconductor package of the present invention comprises the steps of preparing at least a processing substrate and a supporting glass substrate for supporting the processing substrate, and processing the processing substrate, and is characterized in that the supporting glass substrate is the above-described supporting glass substrate.

[0104] The method for manufacturing a semiconductor package of the present invention preferably further includes a step of transporting the laminate. This can improve the processing efficiency. Note that the "step of transporting the laminate" and the "step of performing processing on the processing substrate" do not need to be performed separately and may be performed simultaneously.

[0105] In the semiconductor package manufacturing method of the present invention, the processing is preferably a process of wiring one surface of the processed substrate or a process of forming solder bumps on one surface of the processed substrate. In the semiconductor package manufacturing method of the present invention, these steps can be carried out appropriately because the processed substrate is less likely to change in size during these processes.

[0106] In addition to the above, the processing may be any of the following: mechanical polishing of one surface of the processing substrate (usually the surface opposite the supporting glass substrate), dry etching of one surface of the processing substrate (usually the surface opposite the supporting glass substrate), and wet etching of one surface of the processing substrate (usually the surface opposite the supporting glass substrate). The semiconductor package manufacturing method of the present invention makes it difficult for the processing substrate to warp, and can maintain the rigidity of the laminate. As a result, the above processing can be performed appropriately.

[0107] The present invention will be further explained with reference to the drawings.

[0108] Fig. 1 is a conceptual perspective view showing an example of a laminate 1 of the present invention. In Fig. 1, the laminate 1 includes a supporting glass substrate 10 and a processing substrate 11. The supporting glass substrate 10 is attached to the processing substrate 11 to prevent dimensional changes of the processing substrate 11. A release layer 12 and an adhesive layer 13 are disposed between the supporting glass substrate 10 and the processing substrate 11. The release layer 12 is in contact with the supporting glass substrate 10, and the adhesive layer 13 is in contact with the processing substrate 11.

[0109] That is, the laminate 1 is formed by stacking the support glass substrate 10, the release layer 12, the adhesive layer 13, and the processing substrate 11 in this order. The shape of the support glass substrate 10 is determined depending on the processing substrate 11; in FIG. 1 , the shapes of the support glass substrate 10 and the processing substrate 11 are both substantially disk-shaped. The release layer 12 can be made of, for example, a resin that decomposes when irradiated with a laser. Alternatively, a substance that efficiently absorbs laser light and converts it to heat can be added to the resin. Examples of such substances include carbon black, graphite powder, fine metal powder, dyes, and pigments. The release layer 12 is formed by plasma CVD or spin coating using a sol-gel method. The adhesive layer 13 is made of a resin and is applied by, for example, various printing methods, inkjet printing, spin coating, roll coating, and the like. Alternatively, ultraviolet-curing tape can be used. After the support glass substrate 10 is peeled from the processing substrate 11 by the release layer 12, the adhesive layer 13 is dissolved and removed using a solvent or the like. The ultraviolet curable tape can be removed with a peeling tape after being irradiated with ultraviolet light.

[0110] FIG. 2 is a conceptual cross-sectional view illustrating the manufacturing process of a fan-out type package. FIG. 2( a) shows a state in which an adhesive layer 21 is formed on one surface of a support member 20. If necessary, a release layer may be formed between the support member 20 and the adhesive layer 21. Next, as shown in FIG. 2( b), multiple semiconductor chips 22 are attached to the adhesive layer 21. At this time, the active side of the semiconductor chips 22 is in contact with the adhesive layer 21. Next, as shown in FIG. 2( c), the semiconductor chips 22 are molded with a resin encapsulant 23. The encapsulant 23 is made of a material that exhibits minimal dimensional change after compression molding and during wiring molding. Next, as shown in FIGS. 2( d) and 2( e), the processed substrate 24 on which the semiconductor chips 22 are molded is separated from the support member 20, and then bonded to a supporting glass substrate 26 via an adhesive layer 25. At this time, the surface of the processed substrate 24 opposite the surface on which the semiconductor chips 22 are embedded is positioned on the supporting glass substrate 26 side. In this manner, a laminate 27 can be obtained. If necessary, a release layer may be formed between the adhesive layer 25 and the supporting glass substrate 26. After the resulting laminate 27 is transported, wiring 28 is formed on the surface of the processed substrate 24 on which the semiconductor chips 22 are embedded, as shown in Fig. 2(f), and then a plurality of solder bumps 29 are formed. Finally, after the processed substrate 24 is separated from the supporting glass substrate 26, the processed substrate 24 is cut into individual semiconductor chips 22, and is then subjected to a subsequent packaging process (Fig. 2(g)).

[0111] The present invention will be described below based on examples. Note that the following examples are merely illustrative and the present invention is not limited to the following examples.

[0112] Tables 1 and 2 show examples of the present invention (samples Nos. 1 to 17) and comparative examples (samples Nos. 18 and 19).

[0113]

[0114]

[0115] First, a glass batch prepared by blending glass raw materials to obtain the glass composition shown in the table was placed in a 300 cc platinum crucible and melted at 1400 to 1700°C for 3 to 24 hours. The glass batch was homogenized by stirring using a platinum stirrer during melting. The molten glass was then poured onto a carbon plate and formed into a glass plate, which was then slowly cooled from a temperature about 20°C higher than the annealing point to room temperature (30°C) at a rate of 3°C / min. The density, Young's modulus, average thermal expansion coefficient in the temperature range of 30 to 380°C, glass transition point, yield point, strain point, annealing point, softening point, transmittance at 254 nm per 1 mm thickness, and high-temperature viscosity of 10 ４．０ Temperature at dPa·s, high temperature viscosity 10 ３．０ Temperature at dPa·s, high temperature viscosity 10 ２．５ Temperature at dPa·s, high temperature viscosity 10 ２．０ The temperature in dPa·s, liquidus viscosity and liquidus temperature were evaluated.

[0116] Next, evaluation was carried out assuming actual production. Specifically, glass batches prepared by blending glass raw materials to obtain the glass compositions shown in the table were placed in a 50 L platinum pot, and glass was produced under the same melting conditions as above, and the presence or absence of unmelted crystalline foreign matter in the glass was confirmed.

[0117] The density is a value measured by the well-known Archimedes method.

[0118] The Young's modulus is a value measured by a resonance method.

[0119] The average coefficient of thermal expansion in the temperature range of 30 to 380° C., the glass transition point, and the yield point are values ​​measured with a dilatometer.

[0120] The strain point, annealing point and softening point are values ​​measured based on the method of ASTM C336.

[0121] The transmittance at 254 nm, calculated as a value equivalent to a thickness of 1 mm, is a value including reflection loss measured using a double-beam spectrophotometer. The measurement samples used were optically polished (mirror-finished) on both sides. The surface roughness Ra of the glass surface of these measurement samples was measured using an AFM and was found to be 0.5 to 1.0 nm in a measurement area of ​​5 μm × 5 μm.

[0122] High temperature viscosity 10 ４．０ dPa·s, 10 ３．０ dPa·s, 10 ２．５ dPa·s and 10 ２．０ The temperature at dPa·s is a value measured by the platinum sphere pull-up method.

[0123] The liquidus temperature is a value obtained by placing a glass powder that has passed through a standard sieve of 30 mesh (500 μm) and remains on a 50 mesh (300 μm) sieve in a platinum boat, holding the boat in a temperature gradient furnace for 24 hours, and then measuring the temperature at which crystals precipitate by microscopic observation. The liquidus viscosity log η is a value obtained by measuring the viscosity of the glass at the liquidus temperature TL by a platinum sphere pulling method.

[0124] The presence or absence of unmelted crystalline foreign matter was confirmed by observing the obtained plate glass with an optical microscope (200x magnification) at five randomly selected non-overlapping locations.

[0125] In Samples No. 1 to 17, no unmelted crystalline foreign matter was found. ２．５ The temperature at dPa s was 1400°C or lower. This suggests that Samples No. 1 to 17 have high melting properties during glass melting, which makes it possible to avoid a decrease in the mechanical strength of the resulting supporting glass substrate. Furthermore, since no unmelted crystalline foreign matter was observed, it is thought that a decrease in transmittance on the short wavelength side can be avoided. From the above, Samples No. 1 to 17 are considered to be suitable as supporting glass substrates. On the other hand, Samples No. 18 and 19 are considered to be unsuitable as supporting glass substrates because unmelted crystalline foreign matter was precipitated.

[0126] First, glass raw materials were prepared to obtain the glass compositions shown in Samples No. 1 to 17 in the table, and then fed into a glass melting furnace and melted at 1400 to 1700°C. The molten glass was then fed into an overflow downdraw forming apparatus and formed into a plate thickness of 0.8 mm. Both surfaces of the obtained glass substrates were mechanically polished to reduce the total thickness variation (TTV) to less than 1 μm. The obtained glass substrates were processed to a diameter of 300 mm and a thickness of 0.8 mm, and then both surfaces were polished using a polishing apparatus. Specifically, both surfaces of the glass substrate were sandwiched between a pair of polishing pads with different outer diameters, and both surfaces of the glass substrate were polished while rotating both the glass substrate and the pair of polishing pads. During the polishing process, the glass substrate was occasionally controlled so that a portion of the glass substrate protruded from the polishing pad. The polishing pads were made of urethane, and the average particle size of the polishing slurry used during the polishing process was 2.5 μm, and the polishing speed was 15 m / min. The total thickness variation (TTV) and the amount of warpage of each of the polished glass substrates were measured using a Bow / Warp measuring device SBW-331M / Ld manufactured by Kobelco Research Institute, Inc. As a result, the total thickness variation (TTV) was 0.85 μm or less, and the amount of warpage was 35 μm or less.

[0127] REFERENCE SIGNS LIST 1, 27 Laminated body 10, 26 Support glass substrate 11, 24 Processed substrate 12 Peel layer 13, 21, 25 Adhesive layer 20 Support member 22 Semiconductor chip 23 Sealant 28 Wiring 29 Solder bump

Claims

1. A supporting glass substrate for supporting a processed substrate, the glass composition of which is, in mole percent, SiO ２ 47-65%, Al ２ O ３ 5-15%, B ２ O ３ 5 to 20%, CaO 6 to 25%, SrO 1 to 15%, BaO 1 to 15%, and the molar ratio B ２ O ３ / Al ２ O ３ A supporting glass substrate, wherein:

2. The supporting glass substrate according to claim 1, wherein the molar ratio of SrO / BaO is 0.5 to 5.

3. The supporting glass substrate according to claim 1 or 2, wherein the CaO content is greater than the SrO content and the CaO content is greater than the BaO content, in mol %.

4. The supporting glass substrate according to claim 1 or 2, wherein the CaO content is greater than the MgO content in mol %.

5. The supporting glass substrate according to claim 1 or 2, containing, in mol %, 0 to 5% of MgO.

6. In mole percent, Li ２ O + Na ２ O+K ２ The supporting glass substrate according to claim 1 or 2, containing 0 to 1% of O.

7. Na in mole percent ２ The supporting glass substrate according to claim 1 or 2, containing 0 to 1% of O.

8. SnO in mole percent ２ The supporting glass substrate according to claim 1 or 2, containing 0 to 1%.

9. ZrO in mole percent ２ The supporting glass substrate according to claim 1 or 2, containing 0 to 1%.

10. The supporting glass substrate according to claim 1 or 2, having a Young's modulus of 70 GPa or more.

11. The average thermal expansion coefficient in the temperature range of 30°C to 380°C is 40 x 10 －７ / ℃~70×10 －７ The supporting glass substrate according to claim 1 or 2, wherein the temperature is 100°C.

12. Liquidus viscosity is 10 ３．５ The supporting glass substrate according to claim 1 or 2, having a viscosity of dPa·s or more.

13. High temperature viscosity 10 ２．５ The supporting glass substrate according to claim 1 or 2, wherein the temperature at dPa·s is less than 1400°C.

14. The supporting glass substrate according to claim 1 or 2, which has a transmittance including reflection loss at 254 nm, converted to a thickness of 1 mm, of 5% or more.

15. The supporting glass substrate according to claim 1 or 2, which has a wafer shape with a diameter of 100 to 500 mm, a thickness of less than 2.0 mm, a total thickness variation (TTV) of 5 μm or less, and a warpage of 60 μm or less.

16. A supporting glass substrate according to claim 1 or 2, having a generally rectangular shape with at least one side of 300 mm or more, a thickness of less than 2.0 mm, an overall thickness deviation of 5 μm or less, and an amount of warpage of 60 μm or less.

17. The supporting glass substrate according to claim 1 or 2, which is used for supporting a fan-out type wafer-level package or a fan-out type panel-level package.

18. A laminate comprising at least a processed substrate and a supporting glass substrate for supporting said processed substrate, wherein said supporting glass substrate is the supporting glass substrate according to claim 1 or 2.

19. The laminate of claim 18, wherein the engineered substrate comprises at least a semiconductor chip molded with an encapsulant.

20. A method for manufacturing a laminate, comprising the steps of: preparing a supporting glass substrate according to claim 1 or 2; preparing a processed substrate; and laminating the supporting glass substrate and the processed substrate to obtain a laminate.

21. A method for manufacturing a semiconductor package, comprising the steps of: preparing the laminate according to claim 18; and processing the processed substrate.

22. The method for manufacturing a semiconductor package according to claim 21, wherein the processing step includes a step of wiring one surface of the processing substrate.

23. The method of manufacturing a semiconductor package according to claim 21, wherein the processing step includes forming solder bumps on one surface of the processed substrate.