Material gas supply system, material gas supply method, and material gas supply program

Abstract

The present invention reduces the burden of managing the flow rate of a material gas that is supplied to a processing device that uses a chemical reaction. The present invention comprises: a flow rate controller that controls the flow rate of the material gas that is supplied to the processing device; a gas analysis device that measures the concentration of a component to be measured that is included in a derivation gas emitted from the processing device; and a control device that inputs a flow rate setting value to the flow rate controller on the basis of the concentration measurement value of the component to be measured obtained by the gas analysis device. The control device determines a flow rate setting value to be inputted to the flow rate controller, on the basis of a control parameter determined by using a simulation model based on a chemical reaction occurring in the processing device or the volume of a reaction space in the processing device.

Description

Material gas supply system, material gas supply method, and material gas supply program

[0001] The present invention relates to a material gas supply system, a material gas supply method, and a material gas supply program.

[0002] For example, in industrial processes such as petrochemical processes, denitration processes, and carburization processes, the flow rate of the material gas used in the process is manually adjusted based on the concentration of the introduced gas in the furnace so as to satisfy desired process conditions (e.g., to keep the gas concentration in the processing furnace within a desired range).

[0003] However, since the flow rate of the material gas is monitored and adjusted manually as described above, the burden on the workers increases when the industrial process is operated for a long period of time. In addition, since the operation of the industrial process requires workers, it is difficult to improve the operating rate of the processing furnace during times when there are fewer workers, such as at night.

[0004] As shown in Patent Document 1, in a vacuum carburizing process, feedback control is being considered in which the amount of carburizing gas supplied per unit time by a gas supply device is adjusted based on the gas composition in the furnace determined by irradiating the gas in the furnace with a laser beam, so that the gas composition in the furnace is optimized.

[0005] However, in order to perform feedback control so that the gas composition inside the furnace is optimal in the vacuum carburizing process, it is difficult to adjust control parameters such as PID coefficients, and this adjustment takes time.

[0006] Japanese Patent Application Laid-Open No. 2008-208395

[0007] Therefore, the present invention has been made in consideration of the above-mentioned problems, and its main object is to reduce the burden of flow rate management of material gases supplied to process equipment using chemical reactions.

[0008] That is, the material gas supply system of the present invention is a material gas supply system that supplies a material gas involved in a chemical reaction to a process device that uses a chemical reaction, and is equipped with a flow rate controller that controls the flow rate of the material gas, and a control device that inputs a flow rate setting value to the flow rate controller based on the concentration measurement value of a gas analyzer for a component to be measured contained in the derived gas output from the process device, and is characterized in that the control device determines the flow rate setting value to be input to the flow rate controller based on control parameters determined using a simulation model based on the chemical reaction occurring in the process device or the volume of the reaction space in the process device.

[0009] In such a material gas supply system, the flow rate of the material gas is controlled by inputting a flow rate setpoint to the flow rate controller based on the concentration measurement value of the target component contained in the output gas from the process equipment using a gas analyzer. This reduces the burden on personnel involved in monitoring and adjusting the flow rate of the material gas. Furthermore, automatic operation is possible, allowing the process equipment to operate even during times when there are fewer people, such as at night, thereby improving the availability of the process equipment. In particular, in the present invention, the flow rate setpoint to be input to the flow rate controller is determined based on control parameters determined using a simulation model based on the chemical reaction occurring in the process equipment or the volume of the reaction space in the process equipment. This allows the flow rate of the material gas supplied to the process equipment to be adapted to the chemical reaction occurring in the process equipment or the volume of the reaction space in the process equipment, thereby improving the process efficiency of the process equipment.

[0010] The simulation model is preferably based on the length of piping from the flow rate controller to the reaction space or the length of piping from the reaction space to the gas analyzer, in addition to the volume of the chemical reaction or the reaction space. With this configuration, it is possible to determine control parameters taking the piping length into consideration, thereby further improving the process efficiency of the process equipment.

[0011] The material gas supply system of the present invention may further include a gas analyzer for measuring the concentration of the target component contained in the outlet gas discharged from the process equipment. In this case, as a specific embodiment of the gas analyzer, it is desirable that the gas analyzer includes a light source for irradiating the outlet gas with light, a photodetector for detecting light transmitted through the outlet gas, and a concentration calculation unit for calculating the concentration of the target component based on a light intensity signal obtained by the photodetector.

[0012] As a specific embodiment of the light source, the light source may be a laser light source that emits laser light.

[0013] As a specific embodiment of the process equipment, the process equipment may be one that performs a carburization process, a denitration process, or a petrochemical process.

[0014] The control device preferably has a feedforward control unit that outputs a first manipulated variable based on a concentration set value of the target component, and a feedback control unit that outputs a second manipulated variable based on the deviation between the predicted concentration value of the target component obtained by inputting the concentration set value into the simulation model and the measured concentration, and determines a flow rate set value to be input to the flow rate controller based on the first manipulated variable and the second manipulated variable. With this configuration, the flow rate of the material gas can be controlled accurately while increasing the response speed of the flow rate of the material gas.

[0015] The control device preferably has an abnormality determination unit that determines an abnormality in the process equipment or the material gas supply system based on a deviation between the predicted concentration value of the measurement target component obtained by the simulation model and the measured concentration value of the measurement target component. With this configuration, when the abnormality determination unit determines an abnormality in the process equipment or the material gas supply system, the abnormality is notified to an operator or the process equipment or the material gas supply system is stopped, thereby ensuring safety.

[0016] The control device preferably has a parameter change unit that changes the control parameters based on the deviation between the predicted concentration value of the target component obtained by the simulation model and the measured concentration value of the target component. With this configuration, for example, when the process equipment changes to a state different from the initial state and the initial set of control parameters does not properly control the flow rate of the material gas, the control parameters can be changed to match the state of the process equipment.

[0017] Furthermore, the material gas supply method of the present invention is a material gas supply method for supplying a material gas involved in a chemical reaction to a process device using the chemical reaction, wherein the flow rate of the material gas is controlled by a flow rate controller, and a flow rate setting value is input to the flow rate controller based on the concentration measurement value of a gas analyzer for a component to be measured contained in an output gas from the process device, and the flow rate setting value to be input to the flow rate controller is determined based on control parameters determined using a simulation model based on the chemical reaction occurring in the process device or the volume of the reaction space in the process device.

[0018] Furthermore, the material gas supply program of the present invention is a material gas supply program used in a material gas supply system that supplies a material gas involved in a chemical reaction to a process device using the chemical reaction and controls the flow rate of the material gas using a flow rate controller, and is characterized in that the program provides a computer with the function of a control unit that inputs a flow rate setting value to the flow rate controller based on concentration measurements by a gas analyzer for a component to be measured contained in the derived gas from the process device, and the control unit determines the flow rate setting value to be input to the flow rate controller based on control parameters determined using a simulation model based on the chemical reaction occurring in the process device or the volume of the reaction space in the process device.

[0019] According to the present invention as described above, the control parameters of the control device can be easily determined, and the burden of managing the flow rate of the material gas supplied to the process device using a chemical reaction can be reduced.

[0020] FIG. 1 is an overall schematic diagram of a material gas supply system according to one embodiment of the present invention. FIG. 1 is a diagram showing (a) a drive current (voltage) and a modulation signal in pseudo-continuous oscillation, and (b) an oscillation wavelength. FIG. 2 is a schematic diagram showing a method for modulating a laser oscillation wavelength in the same embodiment. FIG. 3 is a control block diagram of a control device of the same embodiment. FIG. 4 is a Bode plot showing a variation range of frequency characteristics in the same embodiment. FIG. 5 is a control block diagram of a control device of a modified embodiment. FIG. 6 is a control block diagram of a control device of a modified embodiment. FIG. 7 is a schematic diagram showing abnormality determination in an abnormality determination unit of the modified embodiment. FIG. 8 is a control block diagram of a control device of a modified embodiment.

[0021] One embodiment of the present invention will be described below with reference to the drawings. It should be noted that, for ease of understanding, all of the drawings shown below are drawn in a schematic manner, with appropriate omissions or exaggerations. Identical components are given the same reference numerals, and their descriptions will be omitted where appropriate.

[0022] <Configuration of material gas supply system 100> As shown in FIG. 1, the material gas supply system 100 of this embodiment supplies a material gas involved in a chemical reaction to various devices 200 (hereinafter referred to as process devices 200) that perform process treatment using a chemical reaction in an industrial process.

[0023] Here, the process equipment 200 is used in industrial processes such as petrochemical processes, denitration processes, carburization processes, etc. In the case of a denitration process, the process equipment 200 is, for example, a denitration reactor, and the material gas therefor is, for example, ammonia (NH ３ In the case of a carburizing process, the process device 200 is, for example, a gas carburizing furnace, and the material gas is, for example, acetylene (C ２ H ２ ) gases.

[0024] Specifically, the material gas supply system 100 includes a flow rate controller (mass flow controller) 2 that controls the flow rate of the material gas supplied to the process equipment 200, a gas analyzer 3 that measures the concentration of a component to be measured contained in the derived gas discharged from the process equipment 200, and a control device 4 that inputs a flow rate setting value to the flow rate controller 2 based on the concentration measurement value of the component to be measured obtained by the gas analyzer 3. Note that the material gas supply system 100 may be configured not to include the gas analyzer 3, but to obtain the concentration measurement value of the component to be measured from a gas analyzer provided separately from the system 100.

[0025] The flow rate controller 2 is a so-called mass flow controller, and is, for example, a single package of a fluid control valve, a flow rate sensor, and a control board (not shown). The flow rate controller 2 performs feedback control of the opening of the fluid control valve based on the deviation between a flow rate setting value set by a control device 4 (described later) and the flow rate of the material gas measured by the flow rate sensor. Note that the flow rate controller does not have to be a mass flow controller that controls the mass flow rate, and may be one that controls the volumetric flow rate.

[0026] The gas analyzer 3 measures the concentration of a component to be measured contained in the output gas from the process equipment 200. In this embodiment, the gas analyzer 3 measures in real time the concentration of a material gas contained in the process gas output from the process equipment 200. In the case of a denitration process, the gas analyzer 3 measures the concentration of a component to be measured, for example, ammonia (NH ３ In the case of a carburization process, the gas analyzer 3 measures the concentration of, for example, acetylene (C ２ H ２ ) concentration is measured.

[0027] Specifically, as shown in FIG. 1, the gas analyzer 3 includes a measurement cell 31 into which a sample gas, which is a process gas, is introduced, a laser light source 32 that irradiates the sample gas in the measurement cell 31 with laser light, which is reference light, a photodetector 33 that detects the intensity of the sample light that has passed through the sample gas in the measurement cell 31, and a signal processing device 34 that receives an output signal from the photodetector 33 and calculates the concentration of the component to be measured based on the output signal.

[0028] Each part will be explained. The measurement cell 31 has a light inlet and an outlet formed of a transparent material such as quartz, calcium fluoride, or barium fluoride that has almost no light absorption in the absorption wavelength band of the component to be measured. Although not shown, the measurement cell 31 is provided with an inlet port for introducing gas into the interior and an outlet port for discharging the gas inside. The sample gas is introduced into the measurement cell 31 from this inlet port.

[0029] The laser light source 32 is a quantum cascade laser (QCL), a type of semiconductor laser, which emits mid-infrared (4 to 12 μm) laser light. This laser light source 32 is capable of modulating (changing) the oscillation wavelength by a given current (or voltage). Note that other types of lasers may be used as long as the oscillation wavelength is variable, and the oscillation wavelength may be changed by changing the temperature, for example. Alternatively, the laser light source 32 may be an interband cascade laser (ICL), a type of semiconductor laser, which emits mid-infrared (3 to 6 μm) laser light.

[0030] The photodetector 33 is a quantum photoelectric element made of, for example, HgCdTe, InGaAs, InAsSb, or PbSe, which has good response. Alternatively, a relatively inexpensive thermal type photodetector such as a thermopile may be used as the photodetector 33.

[0031] The signal processing device 34 comprises an analog electric circuit consisting of a buffer, an amplifier, etc., a digital electric circuit consisting of a CPU, a memory, etc., and at least one of an AD converter, a DA converter, etc. that mediate between these analog and digital electric circuits. The signal processing device 34 functions as a control unit 35 that controls the laser light source 32 and a signal processing unit 36 ​​that receives an output signal from the photodetector 33 and processes the value to calculate the concentration of the component to be measured, as shown in Figure 1, with the CPU and its peripheral devices working together in accordance with a predetermined program stored in a predetermined area of ​​the memory.

[0032] Each part will be described in detail below. The control part 35 has a light source control part 351 that controls the oscillation and modulation width of the laser light source 32. In addition to the light source control part 351, the control part 35 has the function of controlling each part of the gas analyzer 3.

[0033] The light source control unit 351 controls a current source (or a voltage source) that drives the laser light source 32 by outputting a current (or voltage) control signal. Specifically, as shown in Fig. 2A, the light source control unit 351 changes a drive current (or a drive voltage) that provides wavelength modulation at a predetermined frequency, separately from a drive current (or a drive voltage) that causes the laser light source 32 to pulse oscillate, and modulates the oscillation wavelength of the laser light output from the laser light source 32 at a predetermined frequency relative to the center wavelength. This causes the laser light source 32 to emit modulated light modulated at a predetermined modulation frequency.

[0034] In this embodiment, the light source control unit 351 changes the drive current to a triangular wave shape, thereby modulating the oscillation wavelength to a triangular wave shape (see "(b) Oscillation Wavelength" in FIG. 2). In practice, the drive current is modulated using a different function so that the oscillation wavelength becomes a triangular wave shape. Furthermore, as shown in FIG. 3, the oscillation wavelength of the laser light is modulated with the peak of the optical absorption spectrum of the component to be measured as the center wavelength. Alternatively, the light source control unit 351 may change the drive current to a sine wave shape, a sawtooth wave shape, or any other function shape, thereby modulating the oscillation wavelength to a sine wave shape, a sawtooth wave shape, or any other function shape.

[0035] The signal processing unit 36 ​​calculates the concentration of the component to be measured using the light intensity signal, which is the output signal of the photodetector 33. The signal processing unit 36 ​​of this embodiment has a function of correcting the influence of interference from at least one interfering component other than the component to be measured when calculating the concentration of the component to be measured.

[0036] Here, examples of a method for calculating the concentration of the component to be measured while correcting for the influence of interference from at least one interfering component other than the component to be measured include the following (1) or (2).

[0037] (1) An absorption spectrum is obtained from the light intensity signal of the photodetector 33, and the concentration of the component to be measured is calculated by spectral calculation processing such as spectral fitting, baseline estimation, and multivariate analysis for the absorption spectrum.

[0038] (2) The concentration of the target component in the sample gas is calculated by the least squares method or the like using a feature value extracted from the light intensity signal of the photodetector 33 or an intensity-related signal, such as an absorption spectrum obtained from the light intensity signal. This method uses, for example, infrared laser absorption modulation (see Japanese Patent No. 6,886,507), and uses a correlation value between an intensity-related signal related to the intensity of the sample light and multiple predetermined feature signals as a feature value. The feature signals may be functions based on a sine function, a Lorentz function, a Voigt function, or a Gaussian function. The concentration of the target component in the sample gas is then calculated using a feature value (correlation value) per unit concentration extracted from the intensity-related signal when the target component is present alone, a feature value (correlation value) per unit concentration when an interfering component is present alone, and a feature value (correlation value) extracted from the intensity-related signal of the sample gas.

[0039] The control device 4 inputs a flow rate setting value to the flow rate controller 2 based on the concentration measurement value of the component to be measured obtained by the gas analyzer 3. The control device 4 includes an analog electrical circuit including a buffer, an amplifier, etc., a digital electrical circuit including a CPU, a memory, etc., and at least one of an AD converter, a DA converter, etc. that mediates between the analog and digital electrical circuits. The control device 4 may be configured using, for example, a PLC (Programmable Logic Controller). The control device 4 functions as a feedback control unit 41, as shown in FIG. 4, with the CPU and its peripheral devices cooperating in accordance with a predetermined program stored in a predetermined area of ​​the memory.

[0040] The feedback control unit 41 determines, by feedback control, a flow rate set value to be input to the flow rate controller 2 based on control parameters determined using a simulation model for the process equipment 200. Specifically, the flow rate set value is determined using the control parameters based on the deviation between the concentration set value of the material gas set by the operator and the concentration measurement value of the component to be measured obtained by the gas analyzer 3.

[0041] Here, the feedback control unit 41 performs PID control, and the control parameters are parameters for P (proportional) control, I (integral) control, and D (differential) control, respectively, such as proportional gain (Kp), integral gain (Ki), and differential gain (Kd), or proportional gain (Kp), integral time (Ti), and differential time (Td), etc.

[0042] The simulation model is based on the chemical reaction occurring in the process equipment 200 or the volume of the reaction space in the process equipment 200, and can be obtained from a differential equation of the chemical reaction formula occurring in the process equipment 200. The simulation model of this embodiment is created using the reaction rate coefficient of the chemical reaction formula occurring in the process equipment 200 and the volume of the reaction space (furnace volume). In addition, the simulation model can be created taking into consideration the piping length from the flow rate controller 2 to the reaction space, or the piping length from the reaction space to the gas analyzer 3. The simulation model can also be created taking into consideration the flow rate of the carrier gas supplied to the process equipment 200 or the flow rate of the material gas introduced into the process equipment 200, etc.

[0043] For example, the molecule AB ４ The substance to be treated containing the molecule C ２ The material gas containing the compound is reacted to produce the desired product B according to the following reaction formula: ２ Consider the case where we obtain

[0044] (Reaction Scheme 1) 2AB ４ +C ２ → 2AC + 4B ２ (Reaction Scheme 2) AB ４ +2C ２ → AC ２ +2B ２ C (Reaction Scheme 3) 2B ２ +C ２ → 2B ２ C

[0045] The reaction rate equation can be derived from these reaction equations 1 to 3, for example, as follows:

[0046] Here, V is the volume of the reaction space in the process equipment 200 (the volume inside the furnace). ０ is the flow rate of the carrier gas supplied to the process equipment 200. u is the flow rate of the material gas introduced into the process equipment 200. Ｃ２ｉｎ is the C in the material gas introduced into the process equipment 200 ２ is the concentration of k １ , k２ , k ３ is the reaction rate coefficient for each of the above reaction formulas 1 to 3.

[0047] Then, using the reaction rate equation obtained from the above-mentioned reaction equations 1 to 3, the molecules AB ４ The substance to be treated containing the molecule C ２ reacting a material gas containing ２ Specifically, a simulation model is created for obtaining the parameters of the differential equation (model parameters), specifically, the reaction rate coefficient k １ , k ２ , k ３ These are adjusted and determined so as to match the experimental results obtained in advance, and a simulation model is created based on these.

[0048] The control parameters can be determined automatically or manually using a simulation model. Specifically, the control parameters are determined by obtaining the range of variation in the frequency characteristics of the simulation model using a Bode plot, as shown in FIG. 5 . Then, the control parameters are determined so that the feedback control does not become unstable within the range of variation in the frequency characteristics, even in the worst case from the viewpoint of stability, and a feedback control system is designed.

[0049] <Effects of this embodiment> According to the material gas supply system 100 of this embodiment configured as described above, the flow rate of the material gas is controlled by inputting a flow rate setting value to the flow rate controller 2 based on the concentration measurement value of the component to be measured obtained by the gas analyzer 3, thereby reducing the burden on personnel involved in monitoring and adjusting the flow rate of the material gas. Furthermore, automatic operation is possible, allowing the process equipment 200 to operate even during times when there are few people around, such as at night, and improving the availability of the process equipment 200.

[0050] In particular, in this embodiment, the flow rate setting value to be input to the flow rate controller 2 is determined based on control parameters determined using a simulation model based on the chemical reaction occurring in the process equipment 200 or the volume of the reaction space in the process equipment 200. Therefore, the flow rate of the material gas supplied to the process equipment 200 can be adapted to the chemical reaction occurring in the process equipment 200 or the volume of the reaction space in the process equipment, thereby improving the process efficiency in the process equipment 200.

[0051] <Other Embodiments> For example, the control device 4 may perform two-degree-of-freedom control, i.e., feedback control and feedforward control. Specifically, as shown in FIG. 6 , the control device 4 includes a feedforward control unit 42 that outputs a first manipulated variable based on a concentration set value of the component to be measured, and a feedback control unit 43 that outputs a second manipulated variable based on the deviation between a predicted concentration value of the component to be measured, obtained by inputting the concentration set value into a simulation model, and a measured concentration value obtained by the gas analyzer 3. The control device 4 determines a flow rate set value to be input to the flow rate controller 2 based on the first manipulated variable and the second manipulated variable. The simulation model is the same as in the above embodiment. The control parameters in the feedback control unit 43 and the feedforward control unit 42 are determined using the simulation model, as in the above embodiment.

[0052] 7, the control device 4 may have an abnormality determination unit 44 that determines an abnormality in the process equipment 200 or the material gas supply system 100 based on the deviation between the predicted concentration value of the measurement target component obtained by the simulation model and the measured concentration value of the measurement target component obtained by the gas analyzer 3. As shown in FIG. 8, the abnormality determination unit 44 determines an abnormality when the measured concentration value deviates from the assumed range of the predicted concentration value of the measurement target component obtained by inputting the flow rate setting value into the simulation model.

[0053] If the abnormality determination unit 44 determines an abnormality, the control device 4 can notify an operator or the like of the abnormality or shut down the process equipment 200 or the material gas supply system 100. Here, when notifying an operator or the like of the abnormality, the control device 4 can display the abnormality on its display (display device) or control an alarm device such as a sound generator or a warning light to emit sound or light. The display device of the control device 4 can also display the concentration measurement values ​​of the measurement target components obtained by the gas analyzer 3 or the flow rate measurement values ​​obtained by the flow rate controller 2. Furthermore, when shutting down the process equipment 200 or the material gas supply system 100, the control device 4 can output an abnormality signal to the control device of the process equipment 200 to shut it down, or control the valve of the flow rate controller 2 to stop the supply of material gas. Although the control device 4 in FIG. 7 includes the feedforward control unit 42, it may also be configured without the feedforward control unit 42.

[0054] Furthermore, as shown in Fig. 9, the control device 4 may have a parameter change unit 45 that changes the control parameters based on the deviation between the predicted concentration value of the measurement target component obtained by the simulation model and the measured concentration value of the measurement target component obtained by the gas analyzer 3. For example, the parameter change unit 45 may change the control parameters when the process equipment 200 changes to a state different from the initial state, or when the initially set control parameters do not properly control the flow rate of the material gas (when the deviation is equal to or greater than a predetermined value). Note that although the control device 4 in Fig. 8 is configured to have a feedforward control unit 42, it may also be configured without the feedforward control unit 42.

[0055] The analytical device of the above embodiment may also be one that uses an infrared absorption method, such as a detector that uses non-dispersive infrared absorption (NDIR) or a detector that uses Fourier transform infrared spectroscopy (FTIR).

[0056] The light source may be any type of laser other than a semiconductor laser, and any light source may be used as long as it is a single-wavelength light source with a half-width sufficient to ensure measurement accuracy and is capable of wavelength modulation. Also, the light source does not have to be a laser light source.

[0057] The gas analyzer of the above embodiment measures the concentration of the material gas contained in the discharged gas discharged from the process equipment, but it may also measure the concentration of other components produced by chemical reactions in the process equipment in addition to the concentration of the material gas.

[0058] In addition, various modifications and combinations of the embodiments may be made as long as they do not go against the spirit of the present invention.

[0059] According to the present invention, it is possible to reduce the burden of flow rate management of material gases supplied to process equipment using chemical reactions.

[0060] REFERENCE SIGNS LIST 100: Material gas supply system 200: Process device 2: Flow rate controller 3: Gas analyzer 31: Cell 32: Laser light source 33: Photodetector 36: Signal processing unit (concentration calculation unit) 4: Control device 41: Feedback control unit 42: Feedforward control unit 43: Feedback control unit 44: Abnormality determination unit 45: Parameter change unit

Claims

1. A material gas supply system that supplies a material gas involved in a chemical reaction to a process device that uses the chemical reaction, comprising: a flow rate controller that controls the flow rate of the material gas; and a control device that inputs a flow rate setting value to the flow rate controller based on concentration measurements by a gas analyzer for a component to be measured contained in an output gas from the process device, wherein the control device determines the flow rate setting value to be input to the flow rate controller based on control parameters determined using a simulation model that is based on the chemical reaction occurring in the process device or the volume of the reaction space in the process device.

2. The material gas supply system of claim 1, wherein the simulation model is based on the volume of the chemical reaction or the reaction space, as well as the piping length from the flow controller to the reaction space, or the piping length from the reaction space to the gas analyzer.

3. The material gas supply system according to claim 1 or 2, further comprising a gas analyzer for measuring the concentration of the component to be measured contained in the derived gas discharged from the process equipment, the gas analyzer comprising: a light source for irradiating the derived gas with light; a photodetector for detecting light transmitted through the derived gas; and a concentration calculation unit for calculating the concentration of the component to be measured based on the light intensity signal obtained by the photodetector.

4. The material gas supply system according to claim 3, wherein the light source is a laser light source that emits laser light.

5. The material gas supply system according to any one of claims 1 to 4, wherein the process equipment is for performing a carburizing process, a denitrification process, or a petrochemical process.

6. The control device has a feedforward control unit that outputs a first operation amount based on the concentration set value of the component to be measured, and a feedback control unit that outputs a second operation amount based on the deviation between the predicted concentration value of the component to be measured, obtained by inputting the concentration set value into the simulation model, and the measured concentration value, and determines the flow rate set value to be input to the flow rate controller based on the first operation amount and the second operation amount. A material gas supply system as described in any one of claims 1 to 5.

7. A material gas supply system as described in any one of claims 1 to 6, wherein the control device has an abnormality judgment unit that judges an abnormality in the process device or the material gas supply system based on the deviation between the predicted concentration value of the component to be measured obtained by the simulation model and the measured concentration value of the component to be measured.

8. A material gas supply system as described in any one of claims 1 to 7, wherein the control device has a parameter change unit that changes the control parameters based on the deviation between the predicted concentration value of the component to be measured obtained by the simulation model and the measured concentration value of the component to be measured.

9. A material gas supply method for supplying a material gas involved in a chemical reaction to a process device using the chemical reaction, the method comprising: controlling the flow rate of the material gas by a flow rate controller; inputting a flow rate setting value to the flow rate controller based on concentration measurements of a target component contained in an output gas from the process device, the target component being measured by a gas analyzer; and determining the flow rate setting value to be input to the flow rate controller based on control parameters determined using a simulation model based on the chemical reaction occurring in the process device or the volume of the reaction space in the process device.

10. A material gas supply program used in a material gas supply system that supplies a material gas involved in a chemical reaction to a process device that uses the reaction and controls the flow rate of the material gas using a flow rate controller, the program providing a computer with the function of a control unit that inputs a flow rate setting value to the flow rate controller based on the concentration measurement value of a gas analyzer for a component to be measured contained in the derived gas from the process device, and the control unit determines the flow rate setting value to be input to the flow rate controller based on control parameters determined using a simulation model based on the chemical reaction occurring in the process device or the volume of the reaction space in the process device.

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