OC photoresist and use thereof

Abstract

The present application provides an OC photoresist and a use thereof. The OC photoresist comprises the following components in parts by mass: (A) 3-15 parts by mass of nanoparticles; (B) 5-80 parts by mass of a curable monomer; (C) 0.1-5 parts of an initiator; (D) 0.1-0.5 part of a surfactant; and (E) 1-100 parts by mass of a solvent, the initiator having a structure represented by formula I. The OC photoresist of the present application has high transmittance, high sensitivity, and high thermal resistance stability, and a photocured pattern formed by using the OC photoresist has good developing performance and high resolution. The OC photoresist exhibits excellent sensitivity, reduces the cost for forming a photocured pattern, and has a wide prospect for application.

Description

OC photoresist and its application Technical Field

[0001] The present application belongs to the field of photoresist materials, and specifically relates to an OC photoresist and its application. Background Art

[0002] In the application of photoresist, the problem encountered is that the yellowing property of the photoinitiator affects the color difference of the composition. Therefore, finding new active compounds with high sensitivity and low yellowing property in the application of color glue and OC glue has become the focus of technical research in this industry. Even a slight reduction in yellowing property is regarded by users as a significant technological advancement.

[0003] To this end, photoinitiators with different structures have been developed. For example, the photoinitiators disclosed in CN117510396A and CN116135888A have addressed these issues to some extent. However, the transmittance of the cured film after curing under long-wavelength conditions and the stability of the transmittance before and after curing require further consideration. Furthermore, photoresists must exhibit good thermal stability. Therefore, further development of initiators remains crucial to meet the performance requirements of photoresist applications. Summary of the Invention

[0004] The present application provides an OC photoresist and an application thereof. The OC photoresist of the present application has high transmittance, high sensitivity and high heat stability.

[0005] In one aspect, the present application provides an OC photoresist, comprising the following components in parts by weight:

[0006] (A) 3-15 parts by mass of nanoparticles; (B) 5-80 parts by mass of a curable monomer; (C) 0.1-5 parts by mass of an initiator; (D) 0.1-0.5 parts by mass of a surfactant; and (E) 1-100 parts by mass of a solvent;

[0007] The initiator has a structure shown in the following formula I:

[0008] Here, m is 1 or 2.

[0009] In the OC photoresist of the present application, the content of the nanoparticles can be 3 parts by mass, 5 parts by mass, 8 parts by mass, 10 parts by mass, 13 parts by mass or 15 parts by mass, the content of the curable monomer can be 5 parts by mass, 8 parts by mass, 10 parts by mass, 15 parts by mass, 20 parts by mass, 30 parts by mass, 40 parts by mass, 50 parts by mass, 60 parts by mass, 70 parts by mass or 80 parts by mass; the content of the initiator can be 1 part by mass, 2 parts by mass, 3 parts by mass, 4 parts by mass or 5 parts by mass; the content of the surfactant can be 0.1 part by mass, 0.2 parts by mass, 0.3 parts by mass, 0.4 parts by mass or 0.5 parts by mass, and the content of the solvent is 1 part by mass, 3 parts by mass, 5 parts by mass, 10 parts by mass, 20 parts by mass, 30 parts by mass, 40 parts by mass, 50 parts by mass, 60 parts by mass, 70 parts by mass, 80 parts by mass, 90 parts by mass or 100 parts by mass.

[0010] Preferably, the nanoparticles are selected from one or a combination of at least two of ZrO2, TiO2, Al2O3, In2O3, ZnO or SnO2.

[0011] Preferably, the curable monomer is selected from (meth)acrylate compounds and / or alkenyl ether compounds.

[0012] Preferably, the (meth)acrylate compound is any one of (meth)acrylate alkyl esters, (meth)acrylate hydroxy esters, (meth)acrylates of alkylene glycols, (meth)acrylates of polyalkylene glycols, (meth)acrylates of trivalent or higher polyols or dicarboxylic acid modifications thereof, epoxy acrylates, polyurethane (meth)acrylates, polyester acrylates, (meth)acrylates of terminal hydroxylated polymers, urethane resins, silicone resins, (meth)acrylates of oligomeric resins (such as spirane resins, etc.), epoxy acrylates or oxygen-containing acrylates, or a combination of at least two thereof.

[0013] Taking into account the effects of the compatibility, such as curing efficiency, developability, film hardness, substrate adhesion and the like, the (meth)acrylate compound is preferably one or a combination of two or more of alkyl (meth)acrylates, (meth)acrylates of alkylene glycols, (meth)acrylates of polyalkylene glycols, (meth)acrylates of trivalent or higher polyols, epoxy acrylates or polyurethane (meth)acrylates.

[0014] Without limitation, the (meth)acrylate compound can be selected from one or a combination of two or more of the following compounds: methyl (meth)acrylate, butyl (meth)acrylate, isobutyl (meth)acrylate, tert-butyl (meth)acrylate, cyclohexyl (meth)acrylate, ethylhexyl (meth)acrylate, n-octyl (meth)acrylate, isooctyl (meth)acrylate, bisphenol A epoxy acrylate resin, ethylene glycol di(meth)acrylate, diethylene glycol di(meth)acrylate, triethylene glycol di(meth)acrylate, propylene glycol di(meth)acrylate, tripropylene glycol di(meth)acrylate, 1,4-butanediol di(meth)acrylate, 1,6-hexanediol di(meth)acrylate, trimethylolethane tri(meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol penta(meth)acrylate, or dipentaerythritol hexa(meth)acrylate, etc.

[0015] Preferably, the alkenyl ether compound can be any one or a combination of at least two of vinyl ether, 1-propenyl ether, 1-butenyl ether, or 1-pentenyl ether compounds, preferably a vinyl ether compound. More preferably, the vinyl ether compound can be selected from one or a combination of two or more of triethylene glycol divinyl ether, 1,4-cyclohexyl dimethanol divinyl ether, 4-hydroxybutyl vinyl ether, glycerol carbonate vinyl ether, or dodecyl vinyl ether.

[0016] Preferably, the surfactant is selected from fluorine-based surfactants and / or silicone-based surfactants to improve coating characteristics and leveling properties, prevent or reduce the occurrence of stains during coating, and generate relatively few bubbles and film defects.

[0017] Preferably, the solvent is any one of alcohols, terpenes, ketones, aromatic hydrocarbons, glycol ethers or esters, or a combination of at least two of them.

[0018] Preferably, the alcohol solvent is selected from any one or a combination of at least two of methanol, ethanol, n-propanol, isopropanol, ethylene glycol, propylene glycol, 3-methoxy-1-butanol, ethylene glycol monobutyl ether, 3-hydroxy-2-butanone or diacetone alcohol.

[0019] Preferably, the terpene solvent is any one of α-terpene alcohol and β-terpene alcohol, or a combination of at least two of them.

[0020] Preferably, the ketone solvent is selected from any one of acetone, methyl ethyl ketone, cyclohexanone or N-methyl-2-pyrrolidone, or a combination of at least two thereof.

[0021] Preferably, the aromatic hydrocarbon solvent is selected from any one of toluene, xylene or tetramethylbenzene, or a combination of at least two thereof.

[0022] Preferably, the glycol ether solvent is selected from any one of methyl cellosolve, ethyl cellosolve, methyl carbitol, ethyl carbitol, butyl carbitol, diethylene glycol ethyl methyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, dipropylene glycol monomethyl ether, dipropylene glycol monoethyl ether, triethylene glycol monomethyl ether or triethylene glycol monoethyl ether, or a combination of at least two thereof.

[0023] Preferably, the ester solvent is selected from any one of ethyl acetate, butyl acetate, ethyl lactate, 3-methoxybutyl acetate, 3-methoxy-3-butyl acetate, 3-methoxy-3-methyl-1-butyl acetate, cellosolve acetate, ethyl cellosolve acetate, butyl cellosolve acetate, carbitol acetate, ethyl carbitol acetate, butyl carbitol acetate, propylene glycol monomethyl ether acetate or propylene glycol monoethyl ether acetate, or a combination of at least two thereof.

[0024] In the present application, by using the above-mentioned solvents, the components of the OC photoresist can be dissolved and mixed to form a uniform solution-like composition.

[0025] In addition to the aforementioned components, the OC photoresist of this application may optionally contain organic and / or inorganic additives commonly used in the art, including but not limited to pigments, leveling agents, dispersants, or curing agents, depending on the product application requirements. This will be readily apparent to those skilled in the art. Furthermore, other sensitizers and / or photoinitiators may also be added to the composition for compounding, provided that they do not negatively impact the application performance of the composition.

[0026] According to the application requirements of the product, one or more macromolecules or polymer compounds can be selectively added to the composition to improve the application performance of the composition during use. Such macromolecules or polymer compounds can be polyols or polyester polyols; polymers that do not contain reactive functional groups can also be selectively added. These polymers are usually resins containing acidic functional groups such as phenolic hydroxyl groups and carboxyl groups.

[0027] On the other hand, the present application further provides a photocurable pattern, which is formed by the above-mentioned OC photoresist.

[0028] In the present application, the photocurable pattern can be used for a microlens array, an array planarization film pattern, a protective film pattern, an insulating film pattern, or the like.

[0029] In the present application, the photocurable pattern is prepared by coating the above-mentioned OC photoresist on a substrate, and then performing exposure and development.

[0030] Preferably, the photocurable pattern preparation method includes the following steps:

[0031] (1) mixing and stirring the above-mentioned OC photoresist composition, and coating it on a substrate;

[0032] (2) After coating, the film is heated and dried to remove volatile components to form a film with a thickness of 2 to 10 μm;

[0033] (3) The substrate with the coating film is cooled to room temperature, a mask is attached, and the substrate is exposed to ultraviolet light, and then cleaned and developed with a developer to obtain the desired photocured pattern.

[0034] Preferably, the developer is an aqueous solution containing alkali or a mixed aqueous solution of alkali and surfactant.

[0035] The method for forming a photocured pattern using the photoresist provided in the present application adopts the above-mentioned photoresist with excellent transmittance, high sensitivity and heat resistance stability. The obtained photocured pattern has good development effect and high resolution, shows excellent sensitivity, reduces the cost of forming the photolithographic pattern, and has broad application prospects.

[0036] Compared with the prior art, this application has the following beneficial effects:

[0037] The OC photoresist of the present application has high transmittance, high sensitivity and high heat stability. The photocured pattern formed using the OC photoresist has good development effect and high resolution. It shows excellent sensitivity, reduces the cost of forming the photolithographic pattern, and has broad application prospects. DETAILED DESCRIPTION

[0038] The technical solution of the present application is further described below through specific implementation methods. Those skilled in the art should understand that the embodiments are only used to help understand the present application and should not be regarded as specific limitations of the present application.

[0039] Examples 1-10 and Comparative Examples 1-5

[0040] Preparation of OC photoresist

[0041] OC photoresist was prepared according to the formula shown in Table 1 below.

[0042] Table 1

[0043] Nanoparticle A: ZrO2

[0044] Nanoparticle B: Al2O3

[0045] HDDA: 1,6-Hexanediol diacrylate (SR238)

[0046] TPGDA: Tripropylene glycol diacrylate (SR306)

[0047] TMPTA: Trimethylolpropane triacrylate (SR351)

[0048] Initiator A:

[0049] Initiator B:

[0050] Initiator C:

[0051] Initiator D:

[0052] Initiator E:

[0053] Initiator F:

[0054] BYK300: Leveling agent

[0055] Sensitivity test

[0056] The above composition was stirred in the dark and coated on a 21-step gradient ruler using a 6# wire rod to form a coating film with a thickness of about 15 μm. The coating film was exposed to an LED light (385 nm) at a concentration of 191 mJ / cm 2 The film was developed with 2% NaOH aqueous solution for 2 minutes after curing, and then rinsed with tap water for 1 minute. Table 2 below shows the test results of the observation gradient ruler measured under a 365nm light source. The larger the value, the higher the sensitivity.

[0057] Table 2

[0058] Application performance testing

[0059] Under the same conditions, the prepared OC photoresist was spin-coated on a silicon nitride substrate according to the weight parts described in Table 1, dried in a vacuum drying oven, and then baked. The photosensitive resin composition coated on the surface of the glass substrate was exposed to 365nm ultraviolet light using a mask with a 10μm line / space pattern. The photosensitive resin composition was then developed with a 0.5% sodium hydroxide aqueous solution and washed with deionized water to remove the residual developer. Finally, the developed silicon nitride substrate was baked at 100°C for 30min to obtain a sample for evaluation.

[0060] 1. Transmittance

[0061] Except for not using a mask, the samples were prepared according to the method for forming the cured pattern. The transmittance of the cured film under different conditions in the visible light range of 400nm and 500nm was measured by an ultraviolet-visible spectrophotometer (UV-2600, Shimadzu). The results are shown in Table 3.

[0062] 2. <Heat resistance test>

[0063] After the test piece was placed in a constant temperature and humidity chamber at 100°C for 360 hours, its transmittance at 500 nm was measured using the same method as above. The results are shown in Table 3 and evaluated based on the following criteria:

[0064] ○: No peeling, no adhesive layer leaching, no bubbles or damage;

[0065] ×: There is peeling, adhesive layer leaching, bubbles, and damage.

[0066] 3. <Humidity and heat resistance test>

[0067] In the heat and humidity resistance test, the test pieces were placed in a constant temperature and humidity chamber at 100°C and 85% humidity for 360 hours. The transmittance at 500nm was then measured using the same method as above. The results are shown in Table 3. Durability was evaluated based on the following criteria:

[0068] ○: No peeling, no adhesive layer leaching, no bubbles or damage;

[0069] ×: There is peeling, adhesive layer leaching, bubbles, and damage.

[0070] Table 3

[0071] In summary, the OC photoresist described in this application has the characteristics of high transmittance. After application, it not only has the advantages of high heat resistance and stability, but also its transmittance (i.e., transmittance) does not change under high temperature and high humidity environments, and has good application performance.

[0072] The applicant declares that this application uses the above-mentioned embodiments to illustrate the OC photoresist and its applications, but this application is not limited to the above-mentioned embodiments, that is, it does not mean that this application must rely on the above-mentioned embodiments to be implemented. Those skilled in the art should understand that any improvements to this application, equivalent replacements for various raw materials in the product of this application, addition of auxiliary components, and selection of specific methods, etc., are all within the scope of protection and disclosure of this application.

Claims

1. An OC photoresist comprising the following components in parts by weight: (A) 3-15 parts by mass of nanoparticles; (B) 5-80 parts by mass of a curable monomer; (C) 0.1-5 parts by mass of an initiator; (D) 0.1-0.5 parts by mass of a surfactant; and (E) 1-100 parts by mass of a solvent; The initiator has a structure shown in the following formula I: in, m is 1 or 2.

2. The OC photoresist according to claim 1, wherein The nanoparticles are selected from one or a combination of at least two of ZrO2, TiO2, Al2O3, In2O3, ZnO or SnO2.

3. The OC photoresist according to claim 1 or 2, wherein: The curable monomer is selected from (meth)acrylate compounds and / or alkenyl ether compounds.

4. The OC photoresist according to claim 3, wherein The (meth)acrylate compound is any one or a combination of at least two of alkyl (meth)acrylate, hydroxy (meth)acrylate, (meth)acrylate of alkylene glycol, (meth)acrylate of polyalkylene glycol, (meth)acrylate of trivalent or higher polyol or its dicarboxylic acid modified product, epoxy acrylate, polyurethane (meth)acrylate, polyester acrylate, (meth)acrylate of terminal hydroxylated polymer, urethane resin, silicone resin, (meth)acrylate of oligomeric resin (such as spirane resin, etc.), epoxy acrylate or oxygen-containing acrylate.

5. The OC photoresist according to claim 3, wherein The (meth)acrylate compound can be selected from one or a combination of two or more of the following compounds: methyl (meth)acrylate, butyl (meth)acrylate, isobutyl (meth)acrylate, tert-butyl (meth)acrylate, cyclohexyl (meth)acrylate, ethylhexyl (meth)acrylate, n-octyl (meth)acrylate, isooctyl (meth)acrylate, bisphenol A epoxy acrylate resin, ethylene glycol di(meth)acrylate, diethylene glycol di(meth)acrylate, triethylene glycol di(meth)acrylate, propylene glycol di(meth)acrylate, tripropylene glycol di(meth)acrylate, 1,4-butanediol di(meth)acrylate, 1,6-hexanediol di(meth)acrylate, trimethylolethane tri(meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol penta(meth)acrylate or dipentaerythritol hexa(meth)acrylate.

6. The OC photoresist according to claim 3, wherein The alkenyl ether compound can be any one of vinyl ether, 1-propenyl ether, 1-butenyl ether or 1-pentenyl ether compounds, or a combination of at least two thereof, preferably a vinyl ether compound; Preferably, the vinyl ether compound can be selected from one or a combination of two or more of triethylene glycol divinyl ether, 1,4-cyclohexyl dimethanol divinyl ether, 4-hydroxybutyl vinyl ether, glycerol carbonate vinyl ether or dodecyl vinyl ether.

7. The OC photoresist according to any one of claims 1 to 6, wherein The surfactant is selected from fluorine-based surfactants and / or silicone-based surfactants.

8. The OC photoresist according to any one of claims 1 to 7, wherein The solvent is any one of alcohols, terpenes, ketones, aromatic hydrocarbons, glycol ethers or esters, or a combination of at least two of them.

9. The OC photoresist according to any one of claims 1 to 8, wherein The alcohol solvent is selected from any one or a combination of at least two of methanol, ethanol, n-propanol, isopropanol, ethylene glycol, propylene glycol, 3-methoxy-1-butanol, ethylene glycol monobutyl ether, 3-hydroxy-2-butanone or diacetone alcohol; Preferably, the terpene solvent is any one of α-terpene alcohol or β-terpene alcohol or a combination of at least two; Preferably, the ketone solvent is selected from any one or a combination of at least two of acetone, methyl ethyl ketone, cyclohexanone or N-methyl-2-pyrrolidone; Preferably, the aromatic hydrocarbon solvent is selected from any one or a combination of at least two of toluene, xylene or tetramethylbenzene; Preferably, the glycol ether solvent is selected from any one of methyl cellosolve, ethyl cellosolve, methyl carbitol, ethyl carbitol, butyl carbitol, diethylene glycol ethyl methyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, dipropylene glycol monomethyl ether, dipropylene glycol monoethyl ether, triethylene glycol monomethyl ether or triethylene glycol monoethyl ether, or a combination of at least two thereof; Preferably, the ester solvent is selected from any one of ethyl acetate, butyl acetate, ethyl lactate, 3-methoxybutyl acetate, 3-methoxy-3-butyl acetate, 3-methoxy-3-methyl-1-butyl acetate, cellosolve acetate, ethyl cellosolve acetate, butyl cellosolve acetate, carbitol acetate, ethyl carbitol acetate, butyl carbitol acetate, propylene glycol monomethyl ether acetate or propylene glycol monoethyl ether acetate, or a combination of at least two thereof. 10 . A photocurable pattern formed by the OC photoresist according to claim 1 .

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