Electronic device production method and adhesive film

Abstract

The present invention provides an electronic device production method comprising at least: a preparation step for preparing a structure (100) comprising an electronic component (30) having a circuit formation surface (30A), and an adhesive film (50) bonded to the circuit formation surface (30A) side of the electronic component (30); a BG step for back grinding the surface of the electronic component (30) on the opposite side from the circuit formation surface (30A) side; and a DP step for dry polishing the surface of the electronic component (30) on the opposite side from the circuit formation surface (30A) side after the BG step, wherein the adhesive film (50) includes a base material layer (A), an intermediate layer (B), and an adhesive resin layer (C) in this order, the adhesive resin layer (C) of the adhesive film (50) is attached to the circuit formation surface (30A) of the electronic component (30), and the difference (Amax - Amin) between the maximum height Amax and the minimum height Amin with respect to a reference surface in a region 4 mm from the end of the surface of the adhesive film (50) on the base material layer (A) side obtained by performing scanning in the preparation step of the surface of the adhesive film (50) on the base material layer (A) side in the structure (100) is 25 μm or less.

Description

Manufacturing method of electronic device and adhesive film

[0001] The present invention relates to a method for manufacturing an electronic device and an adhesive film.

[0002] Some manufacturing methods for electronic devices include a process of forming a circuit on an electronic component, followed by a process such as back grinding, dry polishing, ion implantation, laser annealing, or sputtering on the surface of the electronic component opposite the circuit-formed surface. In these processes, an adhesive film is used to protect the circuit-formed surface of the electronic component. Patent Document 1, for example, describes a technology related to such an adhesive film.

[0003] Patent Document 1 describes a semiconductor wafer protection sheet having a sheet-like support and an adhesive layer laminated on one surface of the support, in which a cushion layer is provided between the support and the adhesive layer, and the dynamic elastic modulus of the cushion layer at 10 to 40° C. is 1×10 ―２ ~5 x 10 ３ N / cm ２ Patent Document 1 discloses a semiconductor wafer protective sheet characterized by a thickness of 10 to 300 μm and a pressure-sensitive adhesive layer thickness of 5 to 150 μm. Furthermore, Patent Document 1 states that "an object of the present invention is to provide a semiconductor wafer protective sheet that does not create a gap between the circuit and the semiconductor wafer protective sheet even if the circuit formed on the surface of the semiconductor wafer has an unevenness of about 100 μm, and that does not chip or crack the semiconductor wafer when the surface of the semiconductor wafer on which the circuit is not formed is polished."

[0004] Japanese Patent Application Laid-Open No. 2002-241713

[0005] The present invention provides a method for manufacturing an electronic device that includes a back grinding step and a dry polishing step, and that can suppress edge chipping during the dry polishing step.

[0006] According to the present invention, there are provided a method for producing an electronic device and an adhesive film as described below.

[0007] 1. A method for manufacturing an electronic device, comprising at least a preparation step of preparing a structure comprising an electronic component having a circuit formation surface and an adhesive film attached to the circuit formation surface side of the electronic component, a BG step of backgrinding the surface of the electronic component opposite to the circuit formation surface side, and a DP step of dry polishing the surface of the electronic component opposite to the circuit formation surface side after the BG step, wherein the adhesive film comprises a base layer (A), an intermediate layer (B), and an adhesive resin layer (C) in this order, and the adhesive resin layer (C) of the adhesive film is attached to the circuit formation surface of the electronic component, and the maximum height A from a reference plane in a region 4 mm from the edge of the surface of the base layer (A) side of the adhesive film, obtained by scanning the surface of the base layer (A) side of the adhesive film in the structure in the preparation step, ｍａｘ and minimum height A ｍｉｎ The difference between (A ｍａｘ -A ｍｉｎ 2. The method for manufacturing an electronic device, wherein the preparation step includes a step of attaching the pressure-sensitive adhesive film to the circuit-forming surface side of the electronic component, and the melt viscosity of the intermediate layer (B) at a temperature when attaching the pressure-sensitive adhesive film to the electronic component is 3.0 × 10 ３The method for manufacturing an electronic device according to 1., wherein the adhesive film has a viscosity of 100 Pa·s or higher. 3. The method for manufacturing an electronic device according to 1. or 2., wherein the preparation step includes a step of attaching the adhesive film to the circuit-forming surface side of the electronic component, and wherein the temperature when attaching the adhesive film to the electronic component is 40°C or higher and 120°C or lower. 4. The method for manufacturing an electronic device according to any of 1. to 3., wherein the preparation step includes a step of attaching the adhesive film to the circuit-forming surface side of the electronic component, and wherein the pressure when attaching the adhesive film to the electronic component is 0.35 MPa or higher. 5. The method for manufacturing an electronic device according to any of 1. to 4., wherein the preparation step includes a step of attaching the adhesive film to the circuit-forming surface side of the electronic component, and wherein the speed when attaching the adhesive film to the electronic component is 12 mm / s or lower. 6. The method for manufacturing an electronic device according to any of 1. to 5., wherein the backgrinding step includes backgrinding the electronic component to reduce the thickness of the electronic component to 100 μm or less. 7. The method for manufacturing an electronic device according to any one of 1. to 6., further comprising a DC step of dicing the electronic component. 8. The method for manufacturing an electronic device according to 7., comprising the BG step after the DC step. 9. The method for manufacturing an electronic device according to 8., wherein the DC step comprises a step of half-cutting the electronic component. 10. The method for manufacturing an electronic device according to any one of 1. to 9., wherein the electronic component comprises a semiconductor wafer. 11. The method for manufacturing an electronic device according to 10., wherein the semiconductor wafer comprises a sapphire wafer, indium-phosphorus wafer, silicon-carbon wafer, gallium-nitrogen wafer, gallium-arsenic wafer, silicon wafer, germanium wafer, germanium-arsenic wafer, gallium-phosphorus wafer, gallium-arsenic-aluminum wafer, or lithium tantalate wafer. 12. The method for manufacturing an electronic device according to any one of 1. to 11., wherein the circuit formation surface comprises bumps. 13. The method for manufacturing an electronic device according to 12., wherein the height of the bumps is 10 μm or more and 500 μm or less. 14. 14. The method for manufacturing an electronic device according to any one of 1. to 13., wherein the intermediate layer (B) contains a thermoplastic resin.15. The method for producing an electronic device according to 14., wherein the thermoplastic resin comprises one or more selected from the group consisting of ethylene-α-olefin copolymers, ethylene-polar monomer copolymers, and propylene-based polymers. 16. The method for producing an electronic device according to any one of 1. to 15., wherein the thickness of the intermediate layer (B) is 5 μm or more and 1000 μm or less. 17. The method for producing an electronic device according to any one of 1. to 16., wherein the base layer (A) comprises a thermoplastic resin. 18. The method for producing an electronic device according to any one of 1. to 17., wherein the thickness of the base layer (A) is 1 μm or more and 500 μm or less. 19. The method for producing an electronic device according to any one of 1. to 18., wherein the adhesive resin layer (C) comprises one or more selected from the group consisting of heat-peelable adhesive resin layers and light-peelable adhesive resin layers. 20. The method for manufacturing an electronic device according to any one of 1. to 19., wherein the adhesive resin constituting the adhesive resin layer (C) comprises one or more selected from the group consisting of (meth)acrylic adhesive resins, silicone adhesive resins, urethane adhesive resins, olefin adhesive resins, and styrene adhesive resins. 21. The method for manufacturing an electronic device according to any one of 1. to 20., wherein the thickness of the adhesive resin layer (C) is 1 μm or more and 500 μm or less. 22. An adhesive film that can be used to protect a circuit formation surface of an electronic component having a circuit formation surface, comprising a base layer (A), an intermediate layer (B), and an adhesive resin layer (C) in this order, when the adhesive resin layer (C) of the adhesive film is attached to the surface of a 12-inch mirror wafer under conditions of an attachment temperature (Vicat softening point of the intermediate layer (B) + 30°C), an attachment speed of 2 mm / s, and an attachment pressure of 0.40 MPa, a maximum height A from a reference plane in a region 4 mm from an edge of the surface of the base layer (A) side of the adhesive film, obtained by scanning the surface of the base layer (A) side of the adhesive film. ｍａｘ and minimum height A ｍｉｎ The difference between (A ｍａｘ -A ｍｉｎ 23. A pressure-sensitive adhesive film, wherein the melt viscosity of the intermediate layer (B) at a Vicat softening point of the intermediate layer (B) + 30°C is 3.0 × 10 ３22. The pressure-sensitive adhesive film according to 22., having a viscosity of Pa·s or more.

[0008] According to the present invention, it is possible to provide a method for manufacturing an electronic device that includes a back grinding step and a dry polishing step, and that can suppress edge chipping during the dry polishing step.

[0009] 1 is a cross-sectional view schematically showing an example of the structure of an adhesive film 50 of the present embodiment. FIG. 2 is a cross-sectional view schematically showing an example of a method for manufacturing an electronic device of the present embodiment.

[0010] The present invention will be described below based on embodiments.

[0011] Hereinafter, embodiments of the present invention will be described with reference to the drawings. In all drawings, similar components are designated by common reference numerals, and descriptions thereof will be omitted where appropriate. The drawings are schematic and do not correspond to actual dimensional ratios. Numerical ranges "A to B" represent A or more and B or less unless otherwise specified. In this embodiment, "(meth)acrylic" means acrylic, methacrylic, or both acrylic and methacrylic.

[0012] 1. Method for Manufacturing an Electronic Device A method for manufacturing an electronic device according to this embodiment will now be described.

[0013] Fig. 1 is a cross-sectional view schematically showing an example of the structure of an adhesive film 50 of this embodiment. Fig. 2 is a cross-sectional view schematically showing an example of a method for manufacturing an electronic device of this embodiment. The method for manufacturing an electronic device of the present embodiment is a method for manufacturing an electronic device that includes at least a preparation step of preparing a structure 100 including an electronic component 30 having a circuit formation surface 30A and an adhesive film 50 attached to the circuit formation surface 30A side of the electronic component 30, a BG step of backgrinding the surface of the electronic component 30 opposite to the circuit formation surface 30A side, and a DP step of dry polishing the surface of the electronic component 30 opposite to the circuit formation surface 30A side after the BG step, wherein the adhesive film 50 includes a base layer (A), an intermediate layer (B), and an adhesive resin layer (C) in this order, and the adhesive resin layer (C) of the adhesive film 50 is attached to the circuit formation surface 30A of the electronic component 30, and the maximum height A from a reference plane in a region 4 mm from an edge of the surface of the base layer (A) side of the adhesive film 50 obtained by scanning the surface of the base layer (A) side of the adhesive film 50 in the structure 100 in the preparation step is ｍａｘ and minimum height A ｍｉｎ The difference between (A ｍａｘ -A ｍｉｎ ) is 25 μm or less.

[0014] The mechanism by which edge chipping can be suppressed during the dry polishing process by the method for manufacturing an electronic device according to this embodiment is not clear, but it is believed that the maximum height A ｍａｘ and minimum height A ｍｉｎ The difference between (A ｍａｘ -A ｍｉｎ ) to a certain level or less, when electronic component 30 is fixed to the wafer chuck table via adhesive film 50, it is possible to reliably fix electronic component 30 to the wafer chuck table, and as a result, movement of electronic component 30 during grinding is suppressed, which is thought to be the mechanism by which edge chipping is suppressed.

[0015] The maximum height A from the reference plane in a region 4 mm from the edge of the surface of the base layer (A) side of the adhesive film 50, obtained by scanning the surface of the base layer (A) side of the adhesive film 50 ｍａｘ and minimum height A ｍｉｎ The difference between (A ｍａｘ -A ｍｉｎ ) may be, for example, 0.01 μm or more, 0.1 μm or more, 1 μm or more, 3 μm or more, or 5 μm or more, and from the viewpoint of further suppressing edge chipping during the dry polishing process, it is preferably 24 μm or less, more preferably 23 μm or less, even more preferably 22 μm or less, and even more preferably 20 μm or less, and from the viewpoint of further suppressing edge chipping during the dry polishing process, it is preferably 0.01 μm or more and 25 μm or less, more preferably 0.1 μm or more and 24 μm or less, even more preferably 1 μm or more and 23 μm or less, even more preferably 3 μm or more and 22 μm or less, and even more preferably 5 μm or more and 20 μm or less. In addition, in the structure 100 in the preparation step of this embodiment, as an instrument for scanning the surface of the base layer (A) side of the pressure-sensitive adhesive film 50, for example, a stylus-type surface profiler Dektak XTL from Bruker Nano can be used.

[0016] Each step of the method for manufacturing an electronic device according to this embodiment will be described below.

[0017] (1) Preparation Steps The preparation steps of the method for manufacturing an electronic device according to this embodiment will be described below.

[0018] In the preparation step of this embodiment, a structure 100 is prepared, which includes an electronic component 30 having a circuit-forming surface 30A and an adhesive film 50 attached to the circuit-forming surface 30A side of the electronic component 30.

[0019] The structure 100 can be produced, for example, by peeling off the release film from the adhesive resin layer (C) of the adhesive film 50 to expose the surface of the adhesive resin layer (C), and then attaching the circuit formation surface 30A of the electronic component 30 onto the adhesive resin layer (C).

[0020] The operation of attaching the adhesive film 50 to the electronic component 30 may be performed manually, but generally, it can be performed by a device called an automatic attachment machine to which a roll of adhesive film 50 is attached.

[0021] The preparation step of this embodiment preferably includes a step of attaching an adhesive film 50 to the circuit formation surface 30A side of the electronic component 30 from the viewpoint of further suppressing edge chipping during the dry polishing step, and the melt viscosity of the intermediate layer (B) at the temperature when attaching the adhesive film 50 to the electronic component 30 is preferably 2.0 × 10 ３ Pa s or more, more preferably 2.2 × 10 ３ Pa s or more, more preferably 2.4 × 10 ３ Pa s or more, more preferably 2.5 × 10 ３ Pa s or more, more preferably 2.6 × 10 ３ From the viewpoint of further suppressing edge chipping during the dry polishing process and further improving bump absorption, the viscosity is preferably 3.0×10 ３ Pa s or more, more preferably 5.0 × 10 ３ Pa s or more, more preferably 7.0 × 10 ３ Pa s or more, more preferably 1.0 × 10 ４ Pa s or more, more preferably 1.3 × 10 ４ Pa s or more, more preferably 1.5 × 10 ４ Pa s or more, more preferably 1.5 × 10 ４ Pa s or more, and, for example, 1.0 × 10 ５ Pa s or less, and 9.0 × 10 ４ Pa s or less, and ４ Pa s or less, and 5.0 × 10 ４ Pa s or less, and may be 3.0 × 10 ４ Pa s or less, and 2.5 × 10 ４From the viewpoint of further suppressing edge chipping during the dry polishing step, it is preferably 2.0×10 ３ Pa・s or more 1.0×10 ５ Pa s or less, more preferably 2.2 × 10 ３ Pa・s or more 1.0×10 ５ Pa s or less, more preferably 2.4 × 10 ３ Pa・s or more 9.0×10 ４ Pa s or less, more preferably 2.5 × 10 ３ Pa・s or more 9.0×10 ４ Pa s or less, more preferably 2.6 × 10 ３ Pa・s or more 8.0×10 ４ From the viewpoint of further suppressing edge chipping during the dry polishing process and further improving bump absorption, the viscosity is preferably 3.0×10 ３ Pa・s or more 1.0×10 ５ Pa s or less, more preferably 5.0 × 10 ３ Pa・s or more 9.0×10 ４ Pa s or less, more preferably 7.0 × 10 ３ Pa・s or more 8.0×10 ４ Pa s or less, more preferably 1.0 × 10 ４ Pa・s or more 5.0×10 ４ Pa s or less, more preferably 1.3 × 10 ４ Pa・s or more 3.0×10 ４ Pa s or less, more preferably 1.5 × 10 ４ Pa・s or more 2.5×10 ４ Pa s or less, more preferably 1.5 × 10 ４ Pa・s or more 2.5×10 ４ The melt viscosity of the intermediate layer (B) can be measured in accordance with JIS K7199:1999.

[0022] The preparation step of this embodiment preferably includes a step of attaching an adhesive film 50 to the circuit formation surface 30A side of the electronic component 30 from the viewpoint of being able to further suppress edge chipping during the dry polishing step, and the temperature when attaching the adhesive film 50 to the electronic component 30 is preferably 40°C or higher, more preferably 50°C or higher, even more preferably 60°C or higher, even more preferably 65°C or higher, and even more preferably 70°C or higher from the viewpoint of being able to further suppress edge chipping during the dry polishing step and to further improve bump absorbency. The temperature is preferably 40°C or higher or 75°C or higher, and may be, for example, 120°C or lower, 110°C or lower, 100°C or lower, or 90°C or lower. From the viewpoint of being able to further suppress edge chipping during the dry polishing step, the temperature is preferably 40°C or higher and 120°C or lower, more preferably 50°C or higher and 120°C or lower, even more preferably 60°C or higher and 110°C or lower, even more preferably 65°C or higher and 100°C or lower, and even more preferably 70°C or higher and 90°C or lower. From the viewpoint of being able to further suppress edge chipping during the dry polishing step and to further improve bump absorbency, the temperature is preferably 75°C or higher and 90°C or lower.

[0023] The preparation step of this embodiment preferably includes a step of attaching an adhesive film 50 to the circuit formation surface 30A side of the electronic component 30 from the viewpoint of being able to further suppress edge chipping during the dry polishing step, and the pressure when attaching the adhesive film 50 to the electronic component 30 is preferably 0.20 MPa or more, more preferably 0.30 MPa or more, and even more preferably 0.32 MPa or more, from the viewpoint of being able to further suppress edge chipping during the dry polishing step and being able to further improve bump absorbency, and is preferably 0.35 MPa or more, more preferably 0.37 MPa or more, even more preferably 0.39 MPa or more, and even more preferably 0.40 MPa or more, and, for example, The pressure may be 0.00 MPa or less, 0.80 MPa or less, 0.60 MPa or less, or 0.50 MPa or less; from the viewpoint of being able to further suppress edge chipping during the dry polishing step, it is preferably 0.20 MPa or more and 1.00 MPa or less, more preferably 0.30 MPa or more and 1.00 MPa or less, and even more preferably 0.32 MPa or more and 1.00 MPa or less; and from the viewpoint of being able to further suppress edge chipping during the dry polishing step and to further improve bump absorbency, it is preferably 0.35 MPa or more and 1.00 MPa or less, more preferably 0.37 MPa or more and 0.80 MPa or less, even more preferably 0.39 MPa or more and 0.60 MPa or less, and even more preferably 0.40 MPa or more and 0.50 MPa or less.

[0024] The preparation step of this embodiment preferably includes a step of attaching an adhesive film 50 to the circuit formation surface 30A side of the electronic component 30, from the viewpoint of being able to further suppress edge chipping during the dry polishing step. The speed when attaching the adhesive film 50 to the electronic component 30 may be, for example, 0.1 mm / s or more, 0.5 mm / s or more, 1 mm / s or more, or 1.5 mm / s or more. From the viewpoint of being able to further suppress edge chipping during the dry polishing step, the speed is preferably 25 mm / s or less, more preferably 20 mm / s or less, and even more preferably 15 mm / s or less. From the viewpoint of being able to further suppress edge chipping during the dry polishing step and being able to further improve bump absorbency, the speed is preferably 12 mm / s or less, more preferably 10 mm / s or less, and even more preferably 8 mm / s. From the viewpoint of being able to further suppress edge chipping during the dry polishing step, the polishing speed is preferably 0.1 mm / s or more and 25 mm / s or less, more preferably 0.1 mm / s or more and 20 mm / s or less, and even more preferably 0.1 mm / s or more and 15 mm / s or less; and from the viewpoint of being able to further suppress edge chipping during the dry polishing step and to further improve bump absorbency, the polishing speed is preferably 0.1 mm / s or more and 12 mm / s or less, more preferably 0.1 mm / s or more and 10 mm / s or less, even more preferably 0.1 mm / s or more and 8 mm / s or less, even more preferably 0.5 mm / s or more and 6 mm / s or less, even more preferably 1 mm / s or more and 4 mm / s or less, and even more preferably 1.5 mm / s or more and 3 mm / s or less.

[0025] (2) BG Step The BG step in the method for manufacturing an electronic device according to this embodiment will now be described.

[0026] The BG process is a process of back-grinding the surface of the electronic component 30 opposite to the circuit formation surface 30A.

[0027] From the viewpoint of making the electronic device thinner and / or smaller, in the BG process, the electronic component 30 is back-ground to make the thickness of the electronic component 30 preferably 100 μm or less, more preferably 80 μm or less, even more preferably 60 μm or less, even more preferably 40 μm or less, even more preferably 20 μm or less, and even more preferably 10 μm or less.

[0028] (3) DP Step The DP step in the method for manufacturing an electronic device according to this embodiment will now be described.

[0029] The DP process is a process performed after the BG process, in which the surface of the electronic component 30 opposite the circuit formation surface 30A (hereinafter, sometimes referred to as the polished surface) is dry polished.

[0030] The DP process may include a GDP (gettering dry polishing) process in which impurities such as metal ions are captured at gettering sites provided on the polished surface of the electronic component 30. There are no particular limitations on the method for forming the gettering sites, but by forming a damaged layer containing crystal defects and / or distortions on the polished surface of the electronic component 30 (e.g., a semiconductor wafer), the damaged layer can be made to function as a gettering site.

[0031] (4) DC Step The DC step in the method for manufacturing an electronic device according to this embodiment will now be described.

[0032] From the viewpoint of improving the manufacturing efficiency of electronic devices, it is preferable that the manufacturing method of the electronic device of this embodiment further includes a DC step of dicing the electronic component 30 .

[0033] When the method for manufacturing an electronic device according to the present embodiment includes a BG step after the DC step, i.e., a so-called DBG (Dicing Before Grinding) method, edge chipping tends to occur more easily during the dry polishing step. Here, according to the method for manufacturing an electronic device according to the present embodiment, edge chipping during the dry polishing step can be further suppressed, so the method for manufacturing an electronic device according to the present embodiment preferably includes a BG step after the DC step.

[0034] When the DC process includes a step of half-cutting the electronic component 30 (hereinafter, sometimes referred to as a half-cut process), edge chipping tends to occur more easily during the dry polishing process. Here, according to the manufacturing method for an electronic device of this embodiment, edge chipping during the dry polishing process can be further suppressed, so the DC process preferably includes a step of half-cutting the electronic component 30.

[0035] When the half-cutting step of this embodiment includes a step of irradiating the electronic component 30 with a laser to form a modified layer on the electronic component 30, that is, in the case of a so-called optical stealth method (stealth dicing before grinding), edge chipping tends to occur more easily during the dry polishing step. Here, according to the manufacturing method of the electronic device of this embodiment, edge chipping during the dry polishing step can be further suppressed, and therefore, the manufacturing method of the electronic device of this embodiment preferably includes a step of irradiating the electronic component 30 with a laser to form a modified layer on the electronic component 30.

[0036] (5) Other Steps The method for manufacturing an electronic device according to this embodiment may further include steps other than those described above. For example, it may further include a step of wet-polishing the surface of the electronic component 30 opposite the circuit-forming surface 30A (hereinafter, sometimes referred to as the polished surface) using water or a polishing solution, or a step of mounting the resulting electronic device on a circuit board. These steps may be performed based on known information.

[0037] (6) Electronic Component In the method for manufacturing an electronic device according to the present embodiment, the electronic component 30 is not particularly limited, but may be, for example, an electronic component having a circuit such as wiring, a capacitor, a diode, or a transistor formed on its surface. The circuit-forming surface 30A may also be plasma-treated.

[0038] In the method for manufacturing an electronic device of this embodiment, the electronic component 30 is not particularly limited, but may include, for example, one or more types selected from the group consisting of a semiconductor wafer, an epoxy molded wafer, a molded panel, a molded array package, and a semiconductor substrate, and preferably includes a semiconductor wafer.

[0039] The semiconductor wafer of the present embodiment is not particularly limited, and may include, for example, a sapphire wafer, an indium-phosphorus wafer, a silicon-carbon wafer, a gallium-nitrogen wafer, a gallium-arsenic wafer, a silicon wafer, a germanium wafer, a germanium-arsenic wafer, a gallium-phosphorus wafer, a gallium-arsenic-aluminum wafer, or a lithium tantalate wafer, preferably a sapphire wafer, an indium-phosphorus wafer, a silicon-carbon wafer, a gallium-nitrogen wafer, a gallium-arsenic wafer, a silicon wafer, or a germanium wafer, and more preferably a silicon-carbon wafer, a gallium-nitrogen wafer, a gallium-arsenic wafer, or a silicon wafer.

[0040] In the method for manufacturing an electronic device of this embodiment, the circuit formation surface 30A may include bumps.

[0041] For example, when mounting an electronic device on a mounting surface, the bumps are bonded to electrodes formed on the mounting surface to form an electrical connection between the electronic device and the mounting surface (the mounting surface of a printed circuit board or the like).

[0042] The bumps include, for example, one or more types selected from the group consisting of ball bumps, printed bumps, stud bumps, plated bumps, and pillar bumps.

[0043] The type of metal constituting the bump is not particularly limited, and includes, for example, one or more metals selected from the group consisting of solder, silver, gold, copper, tin, lead, bismuth, and alloys thereof.

[0044] As the height of the bumps on the circuit formation surface 30A of the electronic component 30 increases, edge chipping tends to occur more easily during the dry polishing process. According to the method for manufacturing an electronic device of this embodiment, edge chipping during the dry polishing process can be further suppressed, so the bump height is preferably 10 μm or more, more preferably 50 μm or more, even more preferably 70 μm or more, and still more preferably 90 μm or more, and may be, for example, 500 μm or less, 400 μm or less, or 300 μm or less, and is preferably 10 μm or more and 500 μm or less, more preferably 50 μm or more and 500 μm or less, even more preferably 70 μm or more and 400 μm or less, and still more preferably 90 μm or more and 300 μm or less.

[0045] (7) Adhesive Film Each layer constituting the adhesive film 50 will now be described.

[0046] <Substrate Layer (A)> The substrate layer (A) will be described below.

[0047] The substrate layer (A) contains, for example, one or more selected from the group consisting of polyolefins such as polyethylene, polypropylene, poly(4-methyl-1-pentene), and poly(1-butene); polyesters such as polyethylene terephthalate, polybutylene terephthalate, and polyethylene naphthalate; polyamides such as nylon-6, nylon-66, and polymetaxylene adipamide; (meth)acrylic resins; polyvinyl chloride; polyvinylidene chloride; polyimide; polyetherimide; ethylene-vinyl acetate copolymer; polyacrylonitrile; polycarbonate; polystyrene; ionomer; polysulfone; polyethersulfone; and polyetheretherketone. From the viewpoint of being able to improve mechanical properties and transparency, the substrate layer (A) preferably contains one or more selected from the group consisting of polypropylene, polyethylene terephthalate, polyethylene naphthalate, polyamide, polyimide, ethylene-vinyl acetate copolymer, and polybutylene terephthalate, and more preferably contains one or more selected from the group consisting of polyethylene terephthalate and polyethylene naphthalate.

[0048] The substrate layer (A) may be a single layer or two or more layers. The resin film used to form the substrate layer (A) may be a stretched film or a uniaxially or biaxially stretched film. However, from the viewpoint of improving the mechanical strength of the substrate layer (A), a uniaxially or biaxially stretched film is preferred. The substrate layer (A) is preferably annealed in advance from the viewpoint of suppressing warpage of the electronic component 30 after grinding. The substrate layer (A) may be surface-treated to improve adhesion to other layers. Specifically, corona treatment, plasma treatment, undercoat treatment, primer coating treatment, etc. may be performed.

[0049] The substrate layer (A) contains a thermoplastic resin from the viewpoint of improving film properties.

[0050] The thickness of the substrate layer (A) is preferably 1 μm or more, more preferably 10 μm or more, even more preferably 20 μm or more, even more preferably 40 μm or more, and even more preferably 50 μm or more, from the viewpoint of improving the film properties, and is preferably 500 μm or less, more preferably 400 μm or less, even more preferably 300 μm or less, even more preferably 200 μm or less, and even more preferably 100 μm or less, from the viewpoint of improving the film properties, and is preferably 1 μm or more and 500 μm or less, more preferably 10 μm or more and 400 μm or less, even more preferably 20 μm or more and 300 μm or more, even more preferably 40 μm or more and 200 μm or less, and even more preferably 50 μm or more and 100 μm or less, from the viewpoint of improving the film properties.

[0051] <Intermediate Layer (B)> The intermediate layer (B) will be described below.

[0052] The material of the intermediate layer (B) is not particularly limited, and examples thereof include resins. Examples of the intermediate layer (B) include olefin-based resins such as ethylene-α-olefin copolymers containing ethylene and an α-olefin having 3 to 20 carbon atoms, high-density ethylene resins, low-density ethylene resins, medium-density ethylene resins, very-low-density ethylene resins, linear low-density polyethylene (LLDPE) resins, propylene (co)polymers, 1-butene (co)polymers, 4-methylpentene-1 (co)polymers, ethylene-cyclic olefin copolymers, ethylene-α-olefin-cyclic olefin copolymers, ethylene-α-olefin-non-conjugated polyene copolymers, ethylene-α-olefin-conjugated polyene copolymers, ethylene-aromatic vinyl copolymers, and ethylene-α-olefin-aromatic vinyl copolymers; ethylene-ethyl (meth)acrylate copolymers, ethylene-methyl (meth)acrylate copolymers, ethylene-propyl (meth)acrylate copolymers, ethylene-butyl (meth)acrylate copolymers; the thermoplastic elastomer may comprise one or more selected from the group consisting of ethylene-(meth)acrylic acid ester copolymers such as ethylene-hexyl (meth)acrylate copolymer, ethylene-2-hydroxyethyl (meth)acrylate copolymer, ethylene-2-hydroxypropyl (meth)acrylate copolymer, and ethylene-glycidyl (meth)acrylate copolymer; ethylene-vinyl acetate copolymer, ethylene-vinyl propionate copolymer, ethylene-vinyl butyrate copolymer, and ethylene-vinyl stearate copolymer; polyvinyl chloride; polyvinylidene chloride; polyolefin-based thermoplastic elastomers; polystyrene-based thermoplastic elastomers; polyurethane-based thermoplastic elastomers; 1,2-polybutadiene-based thermoplastic elastomers; trans-polyisoprene-based thermoplastic elastomers; chlorinated polyethylene-based thermoplastic elastomers; and polyester-based elastomers.

[0053] The intermediate layer (B) preferably contains a thermoplastic resin from the viewpoint of improving film properties.

[0054] The thermoplastic resin contained in the intermediate layer (B) preferably contains one or more selected from the group consisting of ethylene-α-olefin copolymers, ethylene-polar monomer copolymers (preferably ethylene-vinyl acetate copolymers), and propylene-based polymers, from the viewpoint of improving film properties, more preferably one or more selected from the group consisting of ethylene-α-olefin copolymers and ethylene-polar monomer copolymers (preferably ethylene-vinyl acetate copolymers), and even more preferably an ethylene-α-olefin copolymer, from the viewpoint of further suppressing edge chipping during the dry polishing step and further improving bump absorption. Commercially available ethylene-α-olefin copolymers include Tafmer A-4070S, Tafmer A-4085S, and Tafmer A-4090S manufactured by Mitsui Chemicals, Inc., and commercially available ethylene-vinyl acetate copolymers include EV150 manufactured by Mitsui-Dow Chemical Co., Ltd.

[0055] The content of vinyl acetate units in the ethylene-vinyl acetate copolymer contained in the intermediate layer (B) is preferably 10% by mass or more and 50% by mass or less, more preferably 12% by mass or more and 40% by mass or less, and even more preferably 15% by mass or more and 35% by mass or less, from the viewpoint of improving the balance of performance among crosslinkability, flexibility, weather resistance, and transparency. The content of vinyl acetate units in the ethylene-vinyl acetate copolymer contained in the intermediate layer (B) can be measured in accordance with JIS K6730:1995.

[0056] The α-olefin of the ethylene / α-olefin copolymer contained in the intermediate layer (B) includes, for example, an α-olefin having 3 to 20 carbon atoms, preferably an α-olefin having 10 or less carbon atoms, and more preferably an α-olefin having 3 to 8 carbon atoms. The α-olefin having 3 to 8 carbon atoms contained in the intermediate layer (B) includes, for example, one or more selected from the group consisting of propylene, 1-butene, 1-pentene, 1-hexene, 3-methyl-1-butene, 3,3-dimethyl-1-butene, 4-methyl-1-pentene, 1-octene, 1-decene, and 1-dodecene. The ethylene / α-olefin copolymer contained in the intermediate layer (B) includes, for example, one or more selected from the group consisting of random copolymers and block copolymers, and preferably includes a random copolymer from the viewpoint of improving flexibility.

[0057] The MFR of the intermediate layer (B) at a temperature of 190°C and a load of 2.16 kgf may be, for example, 0.1 g / 10 min or more, 0.5 g / 10 min or more, or 1 g / 10 min or more. From the viewpoint of further suppressing edge chipping during the dry polishing step, it is preferably 50 g / 10 min or less, more preferably 40 g / 10 min or less, even more preferably 35 g / 10 min or less, and still more preferably 30 g / 10 min or less. From the viewpoint of further suppressing edge chipping during the dry polishing step and further improving bump absorbency, it is preferably 20 g / 10 min or less, more preferably 15 g / 10 min or less, even more preferably 10 g / 10 min or less, even more preferably 6 g / 10 min or less, and still more preferably 4 g / 10 min or less. From the viewpoint of further suppressing edge chipping during the polishing step, the flow rate is preferably 0.1 g / 10 min or more and 50 g / 10 min or less, more preferably 0.1 g / 10 min or more and 40 g / 10 min or less, even more preferably 0.1 g / 10 min or more and 35 g / 10 min or less, and even more preferably 0.1 g / 10 min or more and 30 g / 10 min or less. From the viewpoint of further suppressing edge chipping during the dry polishing step and further improving bump absorbency, the flow rate is preferably 0.1 g / 10 min or more and 20 g / 10 min or less, more preferably 0.1 g / 10 min or more and 15 g / 10 min or less, even more preferably 0.5 g / 10 min or more and 10 g / 10 min or less, even more preferably 1 g / 10 min or more and 6 g / 10 min or less, and even more preferably 1 g / 10 min or more and 4 g / 10 min or less. The MFR of the intermediate layer (B) at a temperature of 190°C and a load of 2.16 kgf can be measured in accordance with JIS K7210-1:2014.

[0058] The Vicat softening point of the intermediate layer (B) is preferably 20°C or higher, more preferably 30°C or higher, and even more preferably 32°C or higher, from the viewpoint of further suppressing edge chipping during the dry polishing process. From the viewpoint of further suppressing edge chipping during the dry polishing process and further improving bump absorption, it is preferably 35°C or higher, more preferably 41°C or higher. For example, it may be 100°C or lower, 80°C or lower, or 70°C or lower. From the viewpoint of further suppressing edge chipping during the dry polishing process, it is preferably 20°C or higher and 100°C or lower, more preferably 30°C or higher and 100°C or lower, and even more preferably 32°C or higher and 100°C or lower. From the viewpoint of further suppressing edge chipping during the dry polishing process and further improving bump absorption, it is preferably 35°C or higher and 80°C or lower, more preferably 41°C or higher and 70°C or lower. The Vicat softening point of the intermediate layer (B) can be measured in accordance with JIS K7206:2016.

[0059] The melting point of the intermediate layer (B) is preferably 30° C. or higher, more preferably 35° C. or higher, even more preferably 45° C. or higher, even more preferably 50° C. or higher, and even more preferably 55° C. or higher, from the viewpoint of further suppressing edge chipping during the dry polishing step, and may be, for example, 100° C. or lower, 80° C. or lower, or 70° C. or lower. From the viewpoint of further suppressing edge chipping during the dry polishing step, it is preferably 30° C. or higher and 100° C. or lower, more preferably 35° C. or higher and 100° C. or lower, even more preferably 45° C. or higher and 100° C. or lower, even more preferably 50° C. or higher and 80° C. or lower, and even more preferably 55° C. or higher and 70° C. The melting point of the intermediate layer (B) can be calculated from a DSC curve obtained by DSC measurement.

[0060] The density of the intermediate layer (B) is, for example, 800 kg / m ３ or more, and ３ or more, 840 kg / m ３ or more, and ３ or more, 860 kg / m３ or more, and from the viewpoint of further suppressing edge chipping during the dry polishing step, it is preferably 1000 kg / m ３ or less, more preferably 980 kg / m ３ More preferably, 960 kg / m or less ３ From the viewpoint of further suppressing edge chipping during the dry polishing step and further improving bump absorption, it is preferably 940 kg / m or less. ３ or less, more preferably 920 kg / m ３ More preferably, 910 kg / m or less ３ More preferably, 900 kg / m or less ３ From the viewpoint of further suppressing edge chipping during the dry polishing step, it is preferably 800 kg / m or less. ３ More than 1000kg / m ３ or less, more preferably 800 kg / m ３ More than 980kg / m ３ More preferably, 800 kg / m or less ３ More than 960kg / m ３ From the viewpoint of further suppressing edge chipping during the dry polishing step and further improving bump absorption, it is preferably 820 kg / m or less. ３ More than 940kg / m ３ or less, more preferably 840 kg / m ３ More than 920kg / m ３ More preferably, 850 kg / m or less ３ More than 910kg / m ３ More preferably, 860 kg / m or less ３ More than 900kg / m ３ The following is the result.

[0061] The intermediate layer (B) preferably contains a crosslinked thermoplastic resin from the viewpoint of improving heat resistance. The method for crosslinking the thermoplastic resin contained in the intermediate layer (B) is not particularly limited, and examples thereof include crosslinking methods such as crosslinking with a radical polymerization initiator; crosslinking with sulfur or a sulfur-based compound; and crosslinking with radiation such as ultraviolet light, electron beams, and gamma rays. Among these, crosslinking with electron beams is preferred.

[0062] When the thermoplastic resin contained in the intermediate layer (B) is crosslinked by electron beam irradiation, the conditions for electron beam irradiation are, for example, an acceleration voltage of 50 kV to 300 kV and an exposure dose of 100 kGy to 400 kGy.

[0063] When the thermoplastic resin contained in the intermediate layer (B) is crosslinked with a radical polymerization initiator, one or more selected from the group consisting of known thermal radical polymerization initiators and known photoradical polymerization initiators can be used. When the thermoplastic resin contained in the intermediate layer (B) is crosslinked with a radical polymerization initiator containing sulfur, one or more selected from the group consisting of known vulcanization accelerators and known vulcanization acceleration aids can be used.

[0064] The thickness of the intermediate layer (B) is preferably 5 μm or more, more preferably 10 μm or more, even more preferably 50 μm or more, even more preferably 100 μm or more, and even more preferably 150 μm or more from the viewpoint of improving the film properties, and is preferably 1000 μm or less, more preferably 800 μm or less, even more preferably 600 μm or less, even more preferably 400 μm or less, and even more preferably 200 μm or less from the viewpoint of improving the film properties, and is preferably 5 μm or more and 1000 μm or less, more preferably 10 μm or more and 800 μm or less, even more preferably 50 μm or more and 600 μm or less, even more preferably 100 μm or more and 400 μm or less, and even more preferably 150 μm or more and 200 μm or less from the viewpoint of improving the film properties.

[0065] <Adhesive Resin Layer (C)> The adhesive resin layer (C) will be described below.

[0066] The adhesive resin constituting the adhesive resin layer (C) preferably contains one or more selected from the group consisting of (meth)acrylic adhesive resins, silicone adhesive resins, urethane adhesive resins, olefin adhesive resins, and styrene adhesive resins, from the viewpoint of being able to improve film properties, and more preferably contains a (meth)acrylic adhesive resin, from the viewpoint of being able to easily adjust the adhesive strength.

[0067] Examples of the (meth)acrylic adhesive resin contained in the adhesive resin layer (C) include a homopolymer of a (meth)acrylic acid ester compound, a copolymer of a (meth)acrylic acid ester compound and a comonomer, etc. Examples of the (meth)acrylic acid ester compound include one or more selected from the group consisting of methyl (meth)acrylate, ethyl (meth)acrylate, butyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, hydroxyethyl (meth)acrylate, hydroxypropyl (meth)acrylate, dimethylaminoethyl (meth)acrylate, and glycidyl (meth)acrylate.

[0068] The comonomer constituting the (meth)acrylic copolymer contained in the adhesive resin layer (C) includes, for example, one or more selected from the group consisting of vinyl acetate, (meth)acrylonitrile, styrene, (meth)acrylic acid, itaconic acid, (meth)acrylamide, methylol (meth)acrylamide, and maleic anhydride.

[0069] The adhesive resin layer (C) can be formed, for example, by applying a resin composition (hereinafter sometimes referred to as an adhesive resin composition) that serves as a raw material for the adhesive resin layer (C) onto the base material layer (A).

[0070] The adhesive resin composition of the present embodiment preferably contains a (meth)acrylic resin having a polymerizable carbon-carbon double bond in the molecule and a photoinitiator, more preferably further contains a crosslinking agent, and even more preferably further contains a low molecular weight compound having two or more polymerizable carbon-carbon double bonds in the molecule.

[0071] Specifically, the (meth)acrylic adhesive resin having a polymerizable carbon-carbon double bond in the molecule is obtained as follows: First, a monomer having an ethylenic double bond and a copolymerizable monomer having a functional group (P) are copolymerized. Next, the functional group (P) contained in this copolymer is reacted with a monomer having a functional group (Q) capable of undergoing an addition reaction, condensation reaction, or the like with the functional group (P), while leaving the double bond in the monomer, to introduce a polymerizable carbon-carbon double bond into the copolymer molecule.

[0072] The monomer having an ethylenic double bond includes, for example, one or more selected from the group consisting of alkyl acrylate and alkyl methacrylate monomers such as methyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, butyl (meth)acrylate, and ethyl (meth)acrylate, vinyl esters such as vinyl acetate, (meth)acrylonitrile, (meth)acrylamide, and styrene.

[0073] The copolymerizable monomer having the functional group (P) includes, for example, one or more selected from the group consisting of (meth)acrylic acid, maleic acid, 2-hydroxyethyl (meth)acrylate, glycidyl (meth)acrylate, N-methylol (meth)acrylamide, and (meth)acryloyloxyethyl isocyanate.

[0074] The ratio of the monomer having an ethylenic double bond to the copolymerizable monomer having a functional group (P) is preferably 70% by mass or more and 99% by mass or less of the monomer having an ethylenic double bond and 1% by mass or more and 30% by mass or less of the copolymerizable monomer having a functional group (P), and more preferably 80% by mass or more and 95% by mass or less of the monomer having an ethylenic double bond and 5% by mass or more and 20% by mass or less of the copolymerizable monomer having a functional group (P).

[0075] Examples of the monomer having the functional group (Q) include the same monomers as the copolymerizable monomer having the functional group (P).

[0076] The combination of the functional group (P) and the functional group (Q) to be reacted when introducing a polymerizable carbon-carbon double bond into the copolymer of the monomer having an ethylenic double bond and the copolymerizable monomer having the functional group (P) is preferably a combination that readily undergoes an addition reaction, such as a carboxyl group and an epoxy group, a carboxyl group and an aziridyl group, a hydroxyl group and an isocyanate group, etc. Furthermore, any reaction that readily introduces a polymerizable carbon-carbon double bond, such as a condensation reaction between a carboxylic acid group and a hydroxyl group, may be used, without being limited to an addition reaction, as long as it is a reaction that readily introduces a polymerizable carbon-carbon double bond.

[0077] The low molecular weight compound having two or more polymerizable carbon-carbon double bonds in the molecule includes, for example, one or more compounds selected from the group consisting of tripropylene glycol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, tetramethylolmethane tetraacrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol monohydroxypenta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, and ditrimethylolpropane tetraacrylate.

[0078] The content of the low molecular weight compound having two or more polymerizable carbon-carbon double bonds in the molecule is preferably 0.1 parts by mass or more and 20 parts by mass or less, and more preferably 5 parts by mass or more and 18 parts by mass or less, relative to 100 parts by mass of the (meth)acrylic pressure-sensitive adhesive resin.

[0079] The photoinitiator includes, for example, one or more selected from the group consisting of benzoin, isopropyl benzoin ether, isobutyl benzoin ether, benzophenone, Michler's ketone, chlorothioxanthone, dodecyl thioxanthone, dimethyl thioxanthone, diethyl thioxanthone, acetophenone diethyl ketal, benzyl dimethyl ketal, 1-hydroxycyclohexyl phenyl ketone, 2-hydroxy-2-methyl-1-phenylpropan-1-one, 2-benzyl-2-dimethylamino-4'-morpholinobutyrophenone, 2,2-dimethoxy-2-phenylacetophenone, and 2-dimethylamino-2-(4-methylbenzyl)-1-(4-morpholin-4-yl-phenyl)butan-1-one.

[0080] The content of the photoinitiator is preferably 0.1 parts by mass or more and 15 parts by mass or less, more preferably 1 part by mass or more and 10 parts by mass or less, and even more preferably 4 parts by mass or more and 10 parts by mass or less, relative to 100 parts by mass of the (meth)acrylic adhesive resin.

[0081] From the viewpoint of improving the film properties, the adhesive resin layer (C) preferably contains one or more types selected from the group consisting of a heat-peelable adhesive resin layer and a light-peelable adhesive resin layer, more preferably contains a light-peelable adhesive resin layer, and even more preferably contains an ultraviolet-peelable adhesive resin layer.

[0082] The ultraviolet-peelable adhesive resin layer of this embodiment may contain a crosslinking agent. Examples of the crosslinking agent contained in the ultraviolet-peelable adhesive resin layer of this embodiment include one or more compounds selected from the group consisting of epoxy-based compounds such as sorbitol polyglycidyl ether, polyglycerol polyglycidyl ether, pentaerythritol polyglycidyl ether, and diglycerol polyglycidyl ether, aziridine-based compounds such as tetramethylolmethane-tri-β-aziridinyl propionate, trimethylolpropane-tri-β-aziridinyl propionate, N,N'-diphenylmethane-4,4'-bis(1-aziridinecarboxamide), and N,N'-hexamethylene-1,6-bis(1-aziridinecarboxamide), and isocyanate-based compounds such as tetramethylene diisocyanate, hexamethylene diisocyanate, and polyisocyanate.

[0083] The content of the crosslinking agent contained in the ultraviolet-peelable adhesive resin layer of this embodiment is usually preferably in a range such that the number of functional groups in the crosslinking agent is not greater than the number of functional groups in the (meth)acrylic adhesive resin. However, if necessary, an excess amount may be contained when new functional groups are generated in the crosslinking reaction or when the crosslinking reaction is slow. From the viewpoint of improving the performance balance between heat resistance and adhesion, the content of the crosslinking agent contained in the ultraviolet-peelable adhesive resin layer of this embodiment is preferably 0.1 parts by mass or more and 15 parts by mass or less, more preferably 0.5 parts by mass or more and 5 parts by mass or less, relative to 100 parts by mass of the (meth)acrylic adhesive resin.

[0084] The ultraviolet peelable adhesive (ultraviolet curable adhesive) constituting the ultraviolet peelable adhesive resin layer of this embodiment may be any of a solvent type, an emulsion type, a hot melt type, or the like.

[0085] The resin composition used as the raw material for the adhesive resin layer (C) can be applied by a conventional coating method such as a roll coater method, a reverse roll coater method, a gravure roll method, a bar coater method, a comma coater method, or a die coater method. The drying conditions for the applied adhesive are not particularly limited, but drying at 80°C to 200°C for 10 seconds to 10 minutes is preferred, and drying at 80°C to 170°C for 15 seconds to 5 minutes is more preferred. In order to sufficiently promote the crosslinking reaction between the crosslinking agent and the (meth)acrylic adhesive resin, the resin composition used as the raw material for the adhesive resin layer (C) may be heated at 40°C to 80°C for 5 hours to 300 hours after drying.

[0086] The thickness of the adhesive resin layer (C) is preferably 1 μm or more, more preferably 2 μm or more, even more preferably 5 μm or more, even more preferably 8 μm or more, and even more preferably 10 μm or more from the viewpoint of improving the film properties, and is preferably 500 μm or less, more preferably 200 μm or less, even more preferably 100 μm or less, even more preferably 50 μm or less, and even more preferably 20 μm or less from the viewpoint of improving the film properties, and is preferably 1 μm or more and 500 μm or less, more preferably 2 μm or more and 200 μm or less, even more preferably 5 μm or more and 100 μm or less, even more preferably 8 μm or more and 50 μm or less, and even more preferably 10 μm or more and 20 μm or less from the viewpoint of improving the film properties.

[0087] <Other Layers> The pressure-sensitive adhesive film 50 may include layers other than the substrate layer (A), the intermediate layer (B), and the pressure-sensitive adhesive resin layer (C).

[0088] An example of the other layer is a release film. In the pressure-sensitive adhesive film 50, a release film may be further laminated on the pressure-sensitive adhesive resin layer (C). An example of the release film is a polyester film that has been subjected to a release treatment.

[0089] <Method for manufacturing adhesive film> An example of a method for manufacturing the adhesive film 50 will be described below. The adhesive film 50 can be obtained, for example, by forming an intermediate layer (B) on one surface of a base layer (A) by extrusion lamination, applying an adhesive resin composition to the intermediate layer (B), and drying the composition to form an adhesive resin layer (C). The base layer (A) and the intermediate layer (B) may be formed by co-extrusion molding, or may be formed by laminating a film-like base layer (A) and a film-like intermediate layer (B).

[0090] 2. Adhesive Film The adhesive film 50 will now be described.

[0091] The adhesive film 50 is an adhesive film 50 that can be used to protect the circuit-forming surface 30A of an electronic component 30 having a circuit-forming surface 30A, and includes a base layer (A), an intermediate layer (B), and an adhesive resin layer (C) in this order. When the adhesive resin layer (C) of the adhesive film 50 is attached to the surface of a 12-inch mirror wafer under conditions of an attachment temperature (Vicat softening point of the intermediate layer (B) + 30°C), an attachment speed of 2 mm / s, and an attachment pressure of 0.40 MPa, the maximum height A from a reference plane in a region 4 mm from the edge of the surface of the base layer (A) side of the adhesive film 50 obtained by scanning the surface of the base layer (A) side of the adhesive film 50 is ｍａｘ and minimum height A ｍｉｎ The difference between (A ｍａｘ -A ｍｉｎ ) is 25 μm or less.

[0092] The maximum height A from the reference plane in a region 4 mm from the edge of the surface of the base layer (A) side of the adhesive film 50, obtained by scanning the surface of the base layer (A) side of the adhesive film 50 ｍａｘ and minimum height A ｍｉｎ The difference between (A ｍａｘ -A ｍｉｎ) may be, for example, 0.01 μm or more, 0.1 μm or more, 1 μm or more, 3 μm or more, or 5 μm or more, and from the viewpoint of further suppressing edge chipping during the dry polishing step, it is preferably 24 μm or less, more preferably 23 μm or less, even more preferably 22 μm or less, and even more preferably 20 μm or less, and from the viewpoint of further suppressing edge chipping during the dry polishing step, it is preferably 0.01 μm or more and 25 μm or less, more preferably 0.1 μm or more and 24 μm or less, even more preferably 1 μm or more and 23 μm or less, even more preferably 3 μm or more and 22 μm or less, and even more preferably 5 μm or more and 20 μm or less. As an instrument for scanning the surface of the base layer (A) side of the PSA film 50, for example, a stylus-type surface profiler Dektak from Bruker Nano can be used.

[0093] The melt viscosity of the intermediate layer (B) at a Vicat softening point of the intermediate layer (B) + 30°C is preferably 2.0 × 10 to further suppress edge chipping during the dry polishing step. ３ Pa s or more, more preferably 2.2 × 10 ３ Pa s or more, more preferably 2.4 × 10 ３ Pa s or more, more preferably 2.5 × 10 ３ Pa s or more, more preferably 2.6 × 10 ３ From the viewpoint of further suppressing edge chipping during the dry polishing process and further improving bump absorption, the viscosity is preferably 3.0×10 ３ Pa s or more, more preferably 5.0 × 10 ３ Pa s or more, more preferably 7.0 × 10 ３ Pa s or more, more preferably 1.0 × 10 ４ Pa s or more, more preferably 1.3 × 10 ４ Pa s or more, more preferably 1.5 × 10 ４ Pa s or more, more preferably 1.5 × 10 ４ Pa s or more, and, for example, 1.0 × 10 ５ Pa s or less, and 9.0 × 10４ Pa s or less, and ４ Pa s or less, and 5.0 × 10 ４ Pa s or less, and may be 3.0 × 10 ４ Pa s or less, and 2.5 × 10 ４ From the viewpoint of further suppressing edge chipping during the dry polishing step, it is preferably 2.0×10 ３ Pa・s or more 1.0×10 ５ Pa s or less, more preferably 2.2 × 10 ３ Pa・s or more 1.0×10 ５ Pa s or less, more preferably 2.4 × 10 ３ Pa・s or more 9.0×10 ４ Pa s or less, more preferably 2.5 × 10 ３ Pa・s or more 9.0×10 ４ Pa s or less, more preferably 2.6 × 10 ３ Pa・s or more 8.0×10 ４ From the viewpoint of further suppressing edge chipping during the dry polishing process and further improving bump absorption, the viscosity is preferably 3.0×10 ３ Pa・s or more 1.0×10 ５ Pa s or less, more preferably 5.0 × 10 ３ Pa・s or more 9.0×10 ４ Pa s or less, more preferably 7.0 × 10 ３ Pa・s or more 8.0×10 ４ Pa s or less, more preferably 1.0 × 10 ４ Pa・s or more 5.0×10 ４ Pa s or less, more preferably 1.3 × 10 ４ Pa・s or more 3.0×10 ４ Pa s or less, more preferably 1.5 × 10 ４ Pa・s or more 2.5×10 ４ Pa s or less, more preferably 1.5 × 10 ４ Pa・s or more 2.5×10 ４ The melt viscosity of the intermediate layer (B) can be measured in accordance with JIS K7199:1999.

[0094] Although the embodiments of the present invention have been described above, these are merely examples of the present invention, and various other configurations can be adopted. Furthermore, the present invention is not limited to the above-described embodiments, and modifications and improvements within the scope of achieving the object of the present invention are included in the present invention.

[0095] The present invention will be described in more detail below with reference to examples, but the present invention is not limited to these examples.

[0096] Details of the raw materials for the adhesive film are as follows:

[0097] Details of the resins used as raw materials for the intermediate layer (B) are as follows: Ethylene / α-olefin copolymer 1 (manufactured by Mitsui Chemicals, Inc., product name: Tafmer A-4070S) Ethylene / α-olefin copolymer 2 (manufactured by Mitsui Chemicals, Inc., product name: Tafmer A-4085S) Ethylene / α-olefin copolymer 3 (manufactured by Mitsui Chemicals, Inc., product name: Tafmer A-4090S) Ethylene / α-olefin copolymer 4 (manufactured by Mitsui Chemicals, Inc., product name: Tafmer P0275) Ethylene / vinyl acetate copolymer 1 (Mitsui-Dow Polychemicals Co., Ltd., product name: EV150, vinyl acetate content: 33% by mass)

[0098] The physical properties of the intermediate layer (B) were measured as follows.

[0099] The melt viscosity of the intermediate layer (B) was measured in accordance with JIS K7199:1999. Specifically, the raw material resin of the intermediate layer (B) was extrusion-molded using a single-screw extruder to obtain a film having a thickness of 195 μm. Next, the melt viscosity of the obtained film was measured as a sample using a rheometer (manufactured by TA Instruments, model number: ARES-G2) under the following conditions: measurement jig: parallel plate 25 mmφ, deformation mode: shear, frequency: 1 Hz, by increasing the temperature from 23°C at a heating rate of 10°C / min.

[0100] The MFR of the intermediate layer (B) at a temperature of 190°C and a load of 2.16 kgf was measured in accordance with JIS K7210-1:2014.

[0101] The Vicat softening point of the intermediate layer (B) was measured in accordance with JIS K7206:2016.

[0102] The melting point of the intermediate layer (B) was measured using a DSC measuring device (manufactured by PerkinElmer, product name: Diamond DSC) according to the following procedure. First, the raw material resin of the intermediate layer (B) was extrusion-molded using a single-screw extruder to obtain a film with a thickness of 195 μm, and the obtained film was used as a sample. Next, approximately 5 mg of the obtained sample was placed in an aluminum pan and heated from -40 ° C to 150 ° C at 10 ° C / min under a nitrogen atmosphere (1st heating), and then held for 10 minutes. Next, it was cooled to -40 ° C at 500 ° C / min, held for 10 minutes, and then heated again to 150 ° C at 10 ° C / min (2nd heating). Next, the temperature on the horizontal axis and the DSC on the vertical axis were plotted, and the temperature giving the peak top of the endothermic peak in the DSC curve during the 2nd heating was taken as the melting point of the intermediate layer (B).

[0103] The measurement results of the physical properties of the intermediate layer (B) are shown in Table 1.

[0104] Details of the adhesive resin layer (C) are as follows. n-Butyl acrylate (77 parts by mass), methyl methacrylate (16 parts by mass), 2-hydroxyethyl acrylate (7 parts by mass), and t-butylperoxy-2-ethylhexanoate (0.3 parts by mass) as a polymerization initiator were reacted with toluene (20 parts by mass) and ethyl acetate (80 parts by mass) at 85°C for 10 hours. After completion of the reaction, the solution was cooled, and toluene (30 parts by mass), methacryloyloxyethyl isocyanate (7 parts by mass), and dibutyltin dilaurate (0.05 parts by mass) were added thereto. The mixture was reacted at 85°C for 12 hours while blowing air into it, to obtain an adhesive polymer. To 100 parts by mass of the obtained adhesive polymer (solid content), 6 parts by mass of 2-benzyl-2-(dimethylamino)-1-(4-morpholinophenyl)-1-butanone (manufactured by BASF, trade name: Irgacure 369) as a photoinitiator, 1 part by mass of an isocyanate-based crosslinking agent (manufactured by Mitsui Chemicals, Inc., trade name: Olestar P49-75S), and 6 parts by mass of ditrimethylolpropane tetraacrylate (manufactured by Shin-Nakamura Chemical Co., Ltd., trade name: AD-TMP) were added, thereby obtaining an adhesive resin composition for the adhesive resin layer (C).

[0105] The procedure for producing the adhesive film is as follows. Using a single-screw extruder, the raw material resin for the intermediate layer (B) was extruded to a thickness of 195 μm onto a polyethylene terephthalate (PET) film (thickness 50 μm) serving as the base layer (A), to obtain a laminated film. Next, the adhesive resin composition for the adhesive resin layer (C) was applied to a silicone release-treated polyethylene terephthalate (PET) film (thickness 38 μm) and dried to obtain an adhesive resin layer (C) with a thickness of 10 μm. The obtained adhesive resin layer (C) was then bonded to the intermediate layer (B) side of the above-mentioned laminated film, thereby obtaining an adhesive film having the base layer (A), intermediate layer (B), and adhesive resin layer (C) in this order.

[0106] <Maximum height A relative to the reference plane ｍａｘ and minimum height A ｍｉｎ The difference between (A ｍａｘ -A ｍｉｎ Measurement of the maximum height A of the adhesive film relative to the reference plane in a region 4 mm from the edge of the surface of the adhesive film on the base layer (A) side was measured. ｍａｘ and minimum height A ｍｉｎ The difference between (A ｍａｘ -A ｍｉｎ ) was obtained. ｍａｘ -A ｍｉｎ The measurement is performed at four points on the wafer, and the arithmetic mean of the values ​​obtained at each point is A. ｍａｘ -A ｍｉｎ Specifically, when the wafer is likened to a clock and the notch position is set to the 0 o'clock position, A is set at the 0 o'clock, 3 o'clock, 6 o'clock and 9 o'clock positions. ｍａｘ -A ｍｉｎ The results are shown in Table 1.

[0107] <Evaluation of Edge Chipping During GDP> The obtained adhesive film was attached to the surface of a 12-inch mirror wafer under the conditions described in Table 1 using a bonding device DR 3000II manufactured by Nitto Denko Corporation, to obtain a structure. Next, using a grinder / polisher device DGP-8760 manufactured by Disco Corporation, the surface of the obtained structure opposite to the adhesive film attached surface was ground until the wafer thickness was 50 μm. Subsequently, using the DGP-8760, the surface of the obtained structure opposite to the adhesive film attached surface was gettering dry polished. Next, the surface on the substrate layer (A) side of the structure was observed with an optical microscope (MX61L manufactured by Olympus Corporation), and edge chipping was evaluated. Specifically, with the wafer likened to a clock and the notch positioned at 0 o'clock, observation was made with an optical microscope at the 0 o'clock, 3 o'clock, 6 o'clock, and 9 o'clock positions, and if no damage was found in all four positions, it was rated "OK," and if damage was found in one or more positions, it was rated "NG." The results are shown in Table 1.

[0108] <Evaluation of bump absorption> The obtained pressure-sensitive adhesive film was attached to the circuit-formed surface of a bump wafer (manufactured by Well Corporation, diameter: 8 inches, thickness: 750 μm, bump height: 90 μm, bump diameter: 125 μm, bump center distance: 250 μm) using a bonding device DR 3000II manufactured by Nitto Denko Corporation under the conditions described in Table 1 to obtain a structure. The obtained structure was then observed with an optical microscope (manufactured by Olympus Corporation, MX61L), and the bump absorption diameter D of the pressure-sensitive adhesive film was measured from the site where lifting was observed using the image measurement mode. If the bump absorption diameter D was 200 μm or less, it was rated "OK", and if the bump absorption diameter D was more than 200 μm, it was rated "NG". The results are shown in Table 1.

[0109]

[0110] In Table 1, the symbol "-" indicates that no measurement was performed.

[0111] According to this example, in the manufacturing method of an electronic device including a back grinding process and a GDP process, edge chipping during GDP can be suppressed. From this, it can be seen that according to the manufacturing method of an electronic device of this embodiment, in the manufacturing method of an electronic device including a back grinding process and a dry polishing process, edge chipping during the dry polishing process can be suppressed.

[0112] This application claims priority based on Japanese Patent Application No. 2024-048575, filed March 25, 2024, the disclosure of which is incorporated herein by reference in its entirety.

[0113] A: Base layer (A) B: Intermediate layer (B) C: Adhesive resin layer (C) 30: Electronic component 30A: Circuit-forming surface 50: Adhesive film 100: Structure

Claims

1. A method for manufacturing an electronic device, comprising at least a preparation step of preparing a structure comprising an electronic component having a circuit formation surface and an adhesive film attached to the circuit formation surface side of the electronic component; a BG step of backgrinding the surface of the electronic component opposite to the circuit formation surface side; and a DP step of dry polishing the surface of the electronic component opposite to the circuit formation surface side after the BG step, wherein the adhesive film comprises a base layer (A), an intermediate layer (B), and an adhesive resin layer (C) in this order, and the adhesive resin layer (C) of the adhesive film is attached to the circuit formation surface of the electronic component, and the maximum height A from a reference plane in a region 4 mm from the edge of the surface of the base layer (A) side of the adhesive film, obtained by scanning the surface of the base layer (A) side of the adhesive film in the structure in the preparation step, is ｍａｘ and minimum height A ｍｉｎ The difference between (A ｍａｘ -A ｍｉｎ ) is 25 μm or less.

2. The preparation step includes a step of attaching the adhesive film to the circuit-forming surface of the electronic component, and the melt viscosity of the intermediate layer (B) at the temperature when attaching the adhesive film to the electronic component is 3.0 × 10 ３ The method for manufacturing an electronic device according to claim 1 , wherein the viscosity is Pa·s or more.

3. The method for manufacturing an electronic device according to claim 1 or 2, wherein the preparation step includes a step of attaching the adhesive film to the circuit formation surface of the electronic component, and the temperature when attaching the adhesive film to the electronic component is 40°C or higher and 120°C or lower.

4. A method for manufacturing an electronic device according to any one of claims 1 to 3, wherein the preparation step includes a step of attaching the adhesive film to the circuit formation surface of the electronic component, and the pressure applied when attaching the adhesive film to the electronic component is 0.35 MPa or more.

5. A method for manufacturing an electronic device according to any one of claims 1 to 4, wherein the preparation step includes a step of attaching the adhesive film to the circuit formation surface of the electronic component, and the speed at which the adhesive film is attached to the electronic component is 12 mm / s or less.

6. The method for manufacturing an electronic device according to any one of claims 1 to 5, wherein in the BG step, the electronic component is back-ground to reduce the thickness of the electronic component to 100 μm or less.

7. The method for manufacturing an electronic device according to any one of claims 1 to 6, further comprising a DC step of dicing the electronic component.

8. The method for manufacturing an electronic device according to claim 7, further comprising the BG step after the DC step.

9. The method for manufacturing an electronic device according to claim 8, wherein the DC process includes a step of half-cutting the electronic component.

10. The method for manufacturing an electronic device according to any one of claims 1 to 9, wherein the electronic component comprises a semiconductor wafer.

11. The method for manufacturing an electronic device of claim 10, wherein the semiconductor wafer comprises a sapphire wafer, an indium-phosphorus wafer, a silicon-carbon wafer, a gallium-nitrogen wafer, a gallium-arsenide wafer, a silicon wafer, a germanium wafer, a germanium-arsenide wafer, a gallium-phosphorus wafer, a gallium-arsenide-aluminum wafer, or a lithium tantalate wafer.

12. The method for manufacturing an electronic device according to any one of claims 1 to 11, wherein the circuit formation surface includes bumps.

13. The method for manufacturing an electronic device according to claim 12, wherein the height of the bumps is 10 μm or more and 500 μm or less.

14. The method for manufacturing an electronic device according to any one of claims 1 to 13, wherein the intermediate layer (B) contains a thermoplastic resin.

15. The method for manufacturing an electronic device according to claim 14, wherein the thermoplastic resin comprises one or more selected from the group consisting of ethylene-α-olefin copolymers, ethylene-polar monomer copolymers, and propylene-based polymers.

16. The method for manufacturing an electronic device according to any one of claims 1 to 15, wherein the thickness of the intermediate layer (B) is 5 μm or more and 1000 μm or less.

17. The method for manufacturing an electronic device according to any one of claims 1 to 16, wherein the base material layer (A) contains a thermoplastic resin.

18. The method for manufacturing an electronic device according to any one of claims 1 to 17, wherein the thickness of the substrate layer (A) is 1 μm or more and 500 μm or less.

19. A method for manufacturing an electronic device according to any one of claims 1 to 18, wherein the adhesive resin layer (C) comprises one or more types selected from the group consisting of a heat-peelable adhesive resin layer and a light-peelable adhesive resin layer.

20. A method for manufacturing an electronic device according to any one of claims 1 to 19, wherein the adhesive resin constituting the adhesive resin layer (C) comprises one or more types selected from the group consisting of (meth)acrylic adhesive resins, silicone adhesive resins, urethane adhesive resins, olefin adhesive resins, and styrene adhesive resins.

21. The method for manufacturing an electronic device according to any one of claims 1 to 20, wherein the thickness of the adhesive resin layer (C) is 1 μm or more and 500 μm or less.

22. An adhesive film that can be used to protect a circuit formation surface of an electronic component having the circuit formation surface, comprising a base layer (A), an intermediate layer (B), and an adhesive resin layer (C) in this order, when the adhesive resin layer (C) of the adhesive film is attached to the surface of a 12-inch mirror wafer under the conditions of an attachment temperature (Vicat softening point of the intermediate layer (B) + 30°C), an attachment speed of 2 mm / s, and an attachment pressure of 0.40 MPa, the maximum height A from a reference plane in a region 4 mm from the edge of the surface of the base layer (A) side of the adhesive film, obtained by scanning the surface of the base layer (A) side of the adhesive film. ｍａｘ and minimum height A ｍｉｎ The difference between (A ｍａｘ -A ｍｉｎ ) is 25 μm or less.

23. The melt viscosity of the intermediate layer (B) at a Vicat softening point of the intermediate layer (B) + 30°C is 3.0 × 10 ３ The adhesive film according to claim 22, having a viscosity of Pa·s or more.

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