Semiconductor device and method for producing semiconductor device

Abstract

A conductive member (25) is stacked on and connected with a first electrode (11) or a second electrode (12). Connection wiring (26) connects the conductive member (25) and a second wiring member (22). When viewed from a first direction, the conductive member (25) extends so as to protrude further in at least one of a second direction and a third direction than the first electrode (11) or the second electrode (12) to which said conductive member (25) is connected. The connection wiring (26) extends in a curved shape when viewed from the second direction or the third direction.

Description

Semiconductor device and manufacturing method thereof

[0001] The present disclosure relates to a semiconductor device and a method for manufacturing the semiconductor device.

[0002] Patent Document 1 discloses a semiconductor device in which the ends of connection wiring (wires) are joined to electrodes of a semiconductor chip (semiconductor element), while the bent portions of the connection wiring are joined to the circuit pattern, thereby electrically connecting the semiconductor chip and the circuit pattern.

[0003] International Publication No. 2022 / 163695

[0004] However, in the invention of Patent Document 1, the ends of the connection wires are directly bonded to the electrodes of the semiconductor chip, which poses a problem that when the area of ​​the electrodes decreases as the semiconductor chip becomes smaller, it becomes difficult to ensure sufficient space on the electrodes for connecting multiple connection wires.

[0005] An object of the present disclosure is to ensure sufficient space for connecting a plurality of connection wires to a semiconductor chip.

[0006] A first aspect of the present disclosure is a semiconductor chip (10) having a first surface (15) and a second surface (16) opposite to the first surface (15), in which a first electrode (11) and a second electrode (12) arranged at an interval from the first electrode (11) are provided on the first surface (15); a first wiring member (21) made of a conductive plate-like member and on which the semiconductor chip (10) is placed so that the second surface (16) side faces the first wiring member (10); a second wiring member (22) made of a conductive plate-like member and arranged at an interval from the first wiring member (21) in a direction perpendicular to the plate thickness direction of the first wiring member (21); and a second wiring member (22) made of a conductive member and arranged at an interval from the first electrode (11) or the second electrode (12). a conductive member (25) stacked and connected to the first electrode (11) or the second electrode (12) and a connection wiring (26) connecting the conductive member (25) and the second wiring member (22), wherein a direction in which the conductive member (25) is stacked on the first electrode (11) or the second electrode (12) is defined as a first direction, a direction perpendicular to the first direction is defined as a second direction, and a direction perpendicular to the first direction and the second direction is defined as a third direction, the conductive member (25) extends so as to protrude in at least one of the second direction and the third direction beyond the first electrode (11) or the second electrode (12) to which the conductive member (25) is connected, as viewed from the first direction, and the connection wiring (26) extends in a curved shape as viewed from the second direction or the third direction.

[0007] In the first aspect, a space for connecting the connection wiring (26) can be secured at a position of the conductive member (25) that protrudes further in at least one of the second direction and the third direction than the first electrode (11) or the second electrode (12).

[0008] In a second aspect of the present disclosure, in the semiconductor device of the first aspect, the semiconductor chips (10) are mounted in multiple numbers on the first wiring member (21), and the conductive member (25) is connected across the first electrodes (11) or the second electrodes (12) of the multiple semiconductor chips (10).

[0009] In the second aspect, by connecting the first electrodes (11) or the second electrodes (12) of a plurality of semiconductor chips (10) together using one conductive member (25), the labor required to connect the connection wiring (26) can be reduced compared to when a conductive member (25) is connected to each of the plurality of semiconductor chips (10).

[0010] A third aspect of the present disclosure is a semiconductor device according to the first or second aspect, wherein a third electrode (13) is provided on the first surface (15) of the semiconductor chip (10) and is spaced apart from the first electrode (11) and the second electrode (12), and the conductive member (25) is connected to the first electrode (11), the second electrode (12), or the third electrode (13), and extends so as to protrude in at least one of the second direction and the third direction beyond the first electrode (11), the second electrode (12), or the third electrode (13) to which the conductive member (25) is connected, as viewed from the first direction.

[0011] In the third aspect, by providing a conductive member (25) on a semiconductor chip (10) having a first electrode (11), a second electrode (12), and a third electrode (13), it is possible to ensure space for connecting a connection wiring (26) at a position on the conductive member (25) that protrudes further in at least one of the second direction and the third direction than the first electrode (11), the second electrode (12), or the third electrode (13).

[0012] A fourth aspect of the present disclosure is a semiconductor device according to the first or second aspect, wherein a third electrode (13) is provided on the second surface (16) of the semiconductor chip (10), and the third electrode (13) is connected to the first wiring member (21).

[0013] In the fourth aspect, a space for connecting a connection wiring (26) can be secured by the conductive member (25) for a semiconductor chip (10) having a first electrode (11) and a second electrode (12) on a first surface (15) and a third electrode (13) on a second surface (16).

[0014] A fifth aspect of the present disclosure is a semiconductor device according to any one of the first to fourth aspects, wherein the conductive member (25) is arranged so as not to overlap the second wiring member (22) when viewed from the first direction.

[0015] In the fifth aspect, the conductive member (25) can be prevented from interfering with the connection of the connection wiring (26) to the second wiring member (22).

[0016] A sixth aspect of the present disclosure is a semiconductor device according to any one of the first to fifth aspects, wherein the conductive member (25) is positioned more inward than the first wiring member (21) when viewed from the first direction.

[0017] In the sixth aspect, the conductive member (25) can be prevented from interfering with the connection of the connection wiring (26) to the second wiring member (22).

[0018] A seventh aspect of the present disclosure is the semiconductor device according to any one of the first to sixth aspects, wherein the semiconductor chip (10) is a wide bandgap semiconductor.

[0019] In the seventh aspect, the number of connecting wires (26) can be increased in the wide band gap semiconductor.

[0020] An eighth aspect of the present disclosure is a semiconductor device according to any one of the first to seventh aspects, further comprising an insulating sealing material (36) disposed between the first wiring member (21) and the conductive member (25).

[0021] In the eighth aspect, the sealing material (36) can improve the insulation between the first wiring member (21) and the conductive member (25).

[0022] A ninth aspect of the present disclosure is a semiconductor device according to any one of the first to eighth aspects, wherein the conductive member (25) extends so as to protrude in at least one of the second direction and the third direction beyond the semiconductor chip (10) when viewed from the first direction.

[0023] In the ninth aspect, the connecting wires (26) can be connected up to a size not limited by the chip size.

[0024] A tenth aspect of the present disclosure is the semiconductor device of the ninth aspect, further comprising an insulating spacer member (40) that supports the conductive member (25) between the first wiring member (21) and the conductive member (25).

[0025] In the tenth aspect, by supporting the conductive member (25) with the spacer member (40), it is possible to prevent the conductive member (25) from bending when connecting the connection wiring (26) to the conductive member (25).

[0026] An eleventh aspect of the present disclosure is a semiconductor device according to the tenth aspect, wherein a plurality of the spacer members (40) are provided, and the plurality of spacer members (40) are arranged at intervals from each other when viewed from the first direction.

[0027] In the eleventh aspect, the sealant (36) can be caused to flow through the gaps between the plurality of spacer members (40), thereby sealing the gap between the conductive member (25) and the first wiring member (21) with the sealant (36).

[0028] A twelfth aspect of the present disclosure is a semiconductor device according to any one of the ninth to eleventh aspects, wherein a plurality of recesses (41) are provided on a surface of the conductive member (25) facing the first wiring member (21), and the plurality of recesses (41) are arranged at intervals from one another when viewed from the first direction.

[0029] In the twelfth aspect, when a spacer member (40) is disposed between the first wiring member (21) and the conductive member (25), the position of the spacer member (40) can be determined by fitting the spacer member (40) into the recessed portion (41).

[0030] A thirteenth aspect of the present disclosure is a method for manufacturing a semiconductor device according to any one of the first to eighth aspects, including a first step of connecting the conductive member (25) and the second wiring member (22) with a connection wiring (26), wherein the first step includes the steps of: placing a detachable spacer member (40) between the first wiring member (21) and the conductive member (25); connecting the conductive member (25) and the second wiring member (22) with the connection wiring (26) that extends in a curved shape when viewed from the second direction or the third direction; and removing the spacer member (40) from between the first wiring member (21) and the conductive member (25).

[0031] In the thirteenth aspect, a spacer member (40) is disposed between the first wiring member (21) and the conductive member (25), and the conductive member (25) is supported by the spacer member (40). This makes it possible to prevent the conductive member (25) from bending when connecting the connection wiring (26) to the conductive member (25).

[0032] A fourteenth aspect of the present disclosure is the method for manufacturing a semiconductor device of the thirteenth aspect, wherein a plurality of recesses (41) are provided on a surface of the conductive member (25) facing the first wiring member (21), and the plurality of recesses (41) are arranged at intervals from one another when viewed from the first direction, and in the step of arranging a detachable spacer member (40) between the first wiring member (21) and the conductive member (25), the spacer member (40) is arranged in the recess (41).

[0033] In the fourteenth aspect, when a spacer member (40) is disposed between the first wiring member (21) and the conductive member (25), the position of the spacer member (40) can be determined by fitting the spacer member (40) into the recessed portion (41).

[0034] FIG. 1 is a side cross-sectional view showing the configuration of a semiconductor device according to the first embodiment. FIG. 2 is a plan view showing the configuration of a semiconductor chip. FIG. 3 is a plan view showing a state in which conductive members are stacked on a semiconductor chip. FIG. 4 is a plan view illustrating another shape of a conductive member. FIG. 5 is a side cross-sectional view showing the configuration of a semiconductor device according to the second embodiment. FIG. 6 is a plan view showing a state in which conductive members are stacked on a semiconductor chip. FIG. 7 is a plan view showing the configuration of a conductive member according to the third embodiment. FIG. 8 is a side cross-sectional view showing the configuration of a conductive member. FIG. 9 is a side cross-sectional view illustrating a procedure for removing a spacer member. FIG. 10 is a side cross-sectional view showing the configuration of a semiconductor device according to the fourth embodiment. FIG. 11 is a plan view showing the configuration of connection wiring according to the fifth embodiment. FIG. 12 is a side cross-sectional view showing the configuration of a semiconductor device according to the sixth embodiment. FIG. 13 is a plan view showing a state in which conductive members are stacked on a semiconductor chip. FIG. 14 is a plan view showing the configuration of a semiconductor chip according to the seventh embodiment. FIG. 15 is a plan view showing a state in which conductive members are stacked on a semiconductor chip. FIG. 16 is a side cross-sectional view showing the configuration of a semiconductor device according to the eighth embodiment. FIG. 17 is a side cross-sectional view showing the configuration of a semiconductor device according to the ninth embodiment. Fig. 18 is a side cross-sectional view showing the configuration of a semiconductor device according to the tenth embodiment. Fig. 19 is a side cross-sectional view showing the configuration of a semiconductor device according to the eleventh embodiment.

[0035] First Embodiment As shown in FIG. 1, a semiconductor device (1) includes a semiconductor chip (10), a substrate (20), a first wiring member (21), a second wiring member (22), a conductive member (25), a connecting wire (26), a heat dissipation member (28), a case (30), and a sealing material (36).

[0036] The semiconductor chip (10) is, for example, a wide bandgap semiconductor, and has a first surface (15) and a second surface (16) opposite to the first surface (15).

[0037] As shown in Figure 2, a first electrode (11) and a second electrode (12) are provided on the first surface (15). The second electrode (12) is disposed at an interval from the first electrode (11). A third electrode (13) is provided on the second surface (16). The first electrode (11) is, for example, a gate electrode. The second electrode (12) is, for example, a source electrode. The third electrode (13) is, for example, a drain electrode.

[0038] 1, a first wiring member 21 and a second wiring member 22 are provided on the mounting surface of the substrate 20. The substrate 20 is made of an insulating material such as ceramics or aluminum nitride.

[0039] The first wiring member (21) is composed of a plate-like member having electrical conductivity. The semiconductor chip (10) is placed on the first wiring member (21). The second surface (16) of the semiconductor chip (10) faces the first wiring member (21). The semiconductor chip (10) is mounted on the first wiring member (21) by solder (5). As a result, the third electrode (13) of the semiconductor chip (10) is electrically connected to the first wiring member (21).

[0040] The second wiring member (22) is formed of a conductive plate-like member. The second wiring member (22) is disposed at a distance from the first wiring member (21) in a direction perpendicular to the thickness direction of the first wiring member (21). In the example shown in Fig. 1 , the second wiring member (22) is disposed on the left and right sides of the first wiring member (21) at a distance from each other.

[0041] One end of an external terminal (23) is electrically connected to the second wiring member (22). The other end of the external terminal (23) extends to protrude outside the case (30). The other end of the external terminal (23) is connected to a control board (not shown).

[0042] The conductive member (25) is made of a conductive material. The conductive member (25) is made of, for example, copper or aluminum. The conductive member (25) is made of a plate-shaped member. The conductive member (25) is stacked and connected to the first electrode (11) or the second electrode (12) by solder (5). In the example shown in FIG. 1 , the conductive member (25) is connected to the second electrode (12).

[0043] Hereinafter, the direction in which the conductive member (25) is stacked on the first electrode (11) or the second electrode (12) will be referred to as the first direction, the direction perpendicular to the first direction will be referred to as the second direction, and the direction perpendicular to the first and second directions will be referred to as the third direction.

[0044] 3, the conductive member (25) extends so as to protrude in at least one of the second and third directions beyond the second electrode (12) to which the conductive member (25) is connected, as viewed from the first direction. Also, the conductive member (25) extends so as to protrude in at least one of the second and third directions beyond the semiconductor chip (10), as viewed from the first direction.

[0045] In the example shown in Fig. 3, the conductive member (25) extends so as to protrude in both the second direction and the third direction beyond the second electrode (12). The conductive member (25) is arranged so as not to overlap the second wiring member (22) when viewed from the first direction (see Fig. 1).

[0046] As shown in Fig. 1, the first electrode 11 of the semiconductor chip 10 and the second wiring member 22 on the left side in Fig. 1 are connected by a connecting wire 26. The connecting wire 26 is, for example, a wire. The connecting wire 26 is joined to the first electrode 11 and the second wiring member 22 on the left side in Fig. 1 by, for example, wire bonding.

[0047] The connecting wire (26) extends in a curved shape when viewed from the second direction or the third direction. In the example shown in Fig. 1, the connecting wire (26) extends in a curved shape when viewed from the second direction. The first electrode (11) and the second wiring member (22) on the left side in Fig. 1 are connected by a single connecting wire (26) (see Fig. 3).

[0048] The conductive member 25 and the second wiring member 22 on the right side in Fig. 1 are connected by a connection wiring 26. In this way, the second wiring member 22 connected to the first electrode 11 is different from the second wiring member 22 connected to the conductive member 25. The connection wiring 26 is joined to the conductive member 25 and the second wiring member 22 on the right side in Fig. 1 by, for example, wire bonding.

[0049] The connecting wires (26) extend in a curved shape when viewed from the second direction or the third direction. In the example shown in Fig. 1, the connecting wires (26) extend in a curved shape when viewed from the second direction. The conductive member (25) and the second wiring member (22) on the right side in Fig. 1 are connected by a plurality of connecting wires (26) (see Fig. 3).

[0050] In the example shown in Figure 3, when viewed from the first direction, four connection wires (26) are connected to the conductive member (25) at positions that overlap the second electrode (12), and five connection wires (26) are connected to the conductive member (25) at positions that do not overlap the second electrode (12). However, the connection positions and the number of the connection wires (26) are not limited to this form.

[0051] 1, the heat dissipation member (28) is provided on the surface of the substrate (20) opposite to the mounting surface. The heat dissipation member (28) is in the form of a plate. The heat dissipation member (28) is made of, for example, copper or aluminum.

[0052] The case (30) is made of, for example, an insulating resin material and covers the mounting surface of the substrate (20) to define an internal space (35). A sealant (36) is sealed in the internal space (35) of the case (30).

[0053] The sealing material (36) has insulating properties. The sealing material (36) is, for example, a resin material. The sealing material (36) covers the semiconductor chip (10), the first wiring member (21), the second wiring member (22), the conductive member (25), and the connection wiring (26). The sealing material (36) is disposed between the first wiring member (21) and the conductive member (25).

[0054] Below, we will use Figure 4 to explain how the number of connectable connection wirings (26) changes when the amount of protrusion of the conductive member (25) from the second electrode (12) of the semiconductor chip (10) is changed.

[0055] As shown in FIG. 4, when a conductive member (25) is not provided for the second electrode (12) of the semiconductor chip (10), the connection wiring (26) can be connected only within the region of the second electrode (12).

[0056] Next, a case will be considered in which a conductive member 25 is provided for the second electrode 12 of the semiconductor chip 10. Here, the width of the semiconductor chip 10 is D1, and the width of the conductive member 25 is D2.

[0057] The conductive member 25 protrudes in the second direction beyond the second electrode 12 so that D2 < D1 holds true. In this case, the number of connecting wires 26 can be increased without the conductive member 25 protruding beyond the lateral width of the semiconductor chip 10.

[0058] Furthermore, the conductive member 25 is made to protrude beyond the second electrode 12 so that D2 > D1. In this case, the width of the conductive member 25 is larger than when D2 < D1, and the area available for connecting the connection wiring 26 can be increased. As a result, the number of connection wirings 26 can be increased. Here, when the conductive member 25 protrudes beyond the width of the semiconductor chip 10, it is preferable to support the conductive member 25 with a spacer member 40, which will be described in a second embodiment below.

[0059] -Effects of Embodiment 1- According to the features of this embodiment, a space for connecting the connection wiring (26) can be secured at a position on the conductive member (25) that protrudes further in at least one of the second direction and the third direction than the first electrode (11) or the second electrode (12).

[0060] According to the feature of this embodiment, the connecting wiring (26) connecting the conductive member (25) and the second wiring member (22) extends in a curved shape when viewed from the second direction or the third direction, thereby reducing the stress acting on the conductive member (25).

[0061] According to the features of this embodiment, a space for connecting a connection wiring (26) can be secured by the conductive member (25) for a semiconductor chip (10) having a first electrode (11) and a second electrode (12) on a first surface (15) and a third electrode (13) on a second surface (16).

[0062] According to the feature of this embodiment, it is possible to prevent the conductive member (25) from interfering with the connection of the connection wire (26) to the second wiring member (22).

[0063] According to the feature of this embodiment, the number of connecting wires (26) can be increased in the wide band gap semiconductor.

[0064] According to the feature of this embodiment, the sealing material (36) can improve the insulation between the first wiring member (21) and the conductive member (25).

[0065] According to the feature of this embodiment, the connecting wires (26) can be connected up to a size not limited by the chip size.

[0066] Second Embodiment Hereinafter, the same parts as those in the first embodiment will be denoted by the same reference numerals, and only the differences will be described.

[0067] As shown in Fig. 5, the semiconductor device (1) includes a spacer member (40). The spacer member (40) has insulating properties. The spacer member (40) supports the conductive member (25) between the first wiring member (21) and the conductive member (25).

[0068] As shown in Fig. 6, a plurality of spacer members (40) are provided. The plurality of spacer members (40) are arranged at intervals from one another when viewed in the first direction.

[0069] -Effects of Embodiment 2- According to the features of this embodiment, by supporting the conductive member (25) with the spacer member (40), it is possible to prevent the conductive member (25) from bending when connecting the connection wiring (26) to the conductive member (25).

[0070] According to the features of this embodiment, the sealant (36) can be introduced through the gaps between the plurality of spacer members (40), thereby sealing the gap between the conductive member (25) and the first wiring member (21) with the sealant (36).

[0071] 7 and 8 , the conductive member (25) is provided with a plurality of recesses (41). The recesses (41) are provided on a surface of the conductive member (25) facing the first wiring member (21). The recesses (41) are arranged at intervals from one another when viewed in the first direction.

[0072] A detachable spacer member (40) is disposed in the recess (41). The spacer member (40) has insulating properties and supports the conductive member (25) between the first wiring member (21) and the conductive member (25).

[0073] 9, the first step of connecting the conductive member (25) and the second wiring member (22) with the connecting wire (26) will be described. In the first step, a detachable spacer member (40) is disposed between the first wiring member (21) and the conductive member (25). At this time, the position of the spacer member (40) is determined by disposing the spacer member (40) in the recessed portion (41).

[0074] Next, a step is performed in which the conductive member 25 and the second wiring member 22 are connected by a connecting wire 26 that extends in a curved shape when viewed from the second direction or the third direction. In the example shown in Fig. 9, the connecting wire 26 extends in a curved shape when viewed from the second direction.

[0075] Next, a step of removing the spacer member (40) from between the first wiring member (21) and the conductive member (25) is performed.

[0076] -Effects of embodiment 3- According to the features of this embodiment, when the spacer member (40) is disposed between the first wiring member (21) and the conductive member (25), the position of the spacer member (40) can be determined by fitting the spacer member (40) into the recessed portion (41).

[0077] According to the feature of this embodiment, by disposing the spacer member (40) between the first wiring member (21) and the conductive member (25) and supporting the conductive member (25) with the spacer member (40), it is possible to prevent the conductive member (25) from bending when connecting the connection wiring (26) to the conductive member (25).

[0078] Fourth Embodiment As shown in Fig. 10, two conductive members (25) are provided. One conductive member (25) is connected to the first electrode (11) by stacking with solder (5). The other conductive member (25) is connected to the second electrode (12) by stacking with solder (5).

[0079] When viewed from the first direction, the conductive member (25) extends so as to protrude in at least one of the second and third directions beyond the first electrode (11) and the second electrode (12) to which the conductive member (25) is connected. In the example shown in Fig. 10, the conductive member (25) connected to the first electrode (11) protrudes leftward in Fig. 10. The conductive member (25) connected to the second electrode (12) protrudes rightward in Fig. 10.

[0080] A spacer member (40) is provided between the first wiring member (21) and the conductive member (25). The spacer member (40) supports the conductive member (25) between the first wiring member (21) and the conductive member (25). The spacer member (40) may be removed after the connection wiring (26) is connected to the conductive member (25).

[0081] Effect of Embodiment 4 According to the feature of this embodiment, a space for connecting the connection wiring (26) can be secured at a position on the conductive member (25) that protrudes further in at least one of the second direction and the third direction than the first electrode (11) and the second electrode (12).

[0082] Fifth Embodiment In the first embodiment, a configuration in which wire wiring is used as the connection wiring (26) has been described, but the present invention is not limited to this configuration.

[0083] 11, the connection wiring 26 is configured as a ribbon wiring that is wider in the second direction when viewed from the first direction, and is connected to the conductive member 25 and the second wiring member 22.

[0084] In this way, by using ribbon wiring as the connecting wiring (26), the number of connecting wiring (26) can be reduced compared to when wire wiring is used.

[0085] Sixth Embodiment As shown in Figures 12 and 13, a plurality of semiconductor chips 10 are mounted on a first wiring member 21. In the example shown in Figure 12, two semiconductor chips 10 are provided spaced apart in the second direction.

[0086] The conductive member 25 is connected across the first electrodes 11 or the second electrodes 12 of the semiconductor chips 10. In the example shown in Fig. 12, the conductive member 25 is connected across the second electrodes 12.

[0087] -Effects of Embodiment 6- According to the features of this embodiment, by connecting the first electrodes (11) or the second electrodes (12) of multiple semiconductor chips (10) together using one conductive member (25), it is possible to reduce the amount of work required to connect the connection wiring (26) compared to when connecting the conductive members (25) to each of the multiple semiconductor chips (10).

[0088] Seventh Embodiment As shown in Fig. 14, a first electrode 11, a second electrode 12, and a third electrode 13 are provided on a first surface 15 of a semiconductor chip 10. The second electrode 12 is disposed at a distance from the first electrode 11. The third electrode 13 is disposed at a distance from the first electrode 11 and the second electrode 12.

[0089] The first electrode (11) is, for example, a gate electrode, the second electrode (12) is, for example, a source electrode, and the third electrode (13) is, for example, a drain electrode.

[0090] The conductive member (25) is connected to the first electrode (11), the second electrode (12), or the third electrode (13). In the example shown in FIG. 15, two conductive members (25) are provided. One conductive member (25) is stacked and connected to the second electrode (12) by solder (5). The other conductive member (25) is stacked and connected to the third electrode (13) by solder (5).

[0091] When viewed from the first direction, the conductive member (25) extends so as to protrude in the second and third directions beyond the second electrode (12) and the third electrode (13) to which the conductive member (25) is connected.

[0092] -Effects of embodiment 7- According to the features of this embodiment, by providing a conductive member (25) on a semiconductor chip (10) having a first electrode (11), a second electrode (12), and a third electrode (13), it is possible to ensure space for connecting a connection wiring (26) at a position on the conductive member (25) that protrudes further in at least one of the second direction and the third direction than the first electrode (11), the second electrode (12), or the third electrode (13).

[0093] 16 , a conductive member 25 is stacked and connected to a second electrode 12 of a semiconductor chip 10 by solder 5. When viewed from the first direction, the conductive member 25 extends so as to protrude in at least one of the second direction and the third direction beyond the second electrode 12 to which the conductive member 25 is connected.

[0094] 16 , the conductive member (25) extends so as to protrude in the third direction beyond the second electrode (12). The conductive member (25) is disposed more inward than the first wiring member (21) when viewed from the first direction.

[0095] Effect of Eighth Embodiment According to the features of this embodiment, the conductive member (25) can be prevented from interfering with the connection of the connection wire (26) to the second wiring member (22).

[0096] Ninth Embodiment In the first embodiment, the conductive member (25) is described as being formed of a plate-shaped member, but the present invention is not limited to this.

[0097] As shown in Fig. 17, the conductive member 25 is stacked and connected to the second electrode 12 of the semiconductor chip 10 by solder 5. The conductive member 25 is formed in a shape that bends and extends upward at the right end of the semiconductor chip 10 in Fig. 17, and then bends and extends to the right in Fig. 17.

[0098] The connection wire (26) is connected to the upper flat surface of the conductive member (25) that is remote from the semiconductor chip (10).

[0099] In this way, the distance from the end of the semiconductor chip (10) or the first wiring member (21), which is at the drain potential, to the end of the conductive member (25) is ensured, thereby improving the insulation.

[0100] Tenth Embodiment As shown in Fig. 18 , a conductive member (25) is stacked and connected to a second electrode (12) of a semiconductor chip (10) by solder (5). The conductive member (25) is formed in a shape that bends upward at the right end of the semiconductor chip (10) in Fig. 18 , and then bends again to the right in Fig. 18 . The conductive member (25) is formed in a shape that bends upward at the left end of the second electrode (12) of the semiconductor chip (10) in Fig. 18 , and then bends again to the left in Fig. 18 .

[0101] The connection wire (26) is connected to the flat surface of the conductive member (25) on the upper right side, away from the semiconductor chip (10).

[0102] In this way, the distance from the end of the semiconductor chip (10) or the first wiring member (21), which is at the drain potential, to the end of the conductive member (25) is ensured, thereby improving the insulation.

[0103] 19 , a conductive member 25 is stacked and connected to a second electrode 12 of a semiconductor chip 10 by solder 5. The conductive member 25 is formed in a plate shape such that a portion corresponding to the second electrode 12 protrudes toward the second electrode 12, and only the portion corresponding to the second electrode 12 has a large thickness.

[0104] This makes the upper surface of the conductive member (25) flat, and increases the distance from the upper surface of the conductive member (25) to the semiconductor chip (10). The connection wiring (26) is connected to the flat upper surface of the conductive member (25).

[0105] In this way, the distance from the end of the semiconductor chip (10) or the first wiring member (21), which is at the drain potential, to the end of the conductive member (25) is ensured, thereby improving the insulation.

[0106] Furthermore, since the upper surface of the conductive member (25) is flat, it becomes easier to wire-bond the plurality of connection wires (26) to the conductive member (25).

[0107] Other Embodiments Although the embodiments and modifications have been described above, it will be understood that various modifications in form and detail are possible without departing from the spirit and scope of the claims. Furthermore, elements of the above embodiments, modifications, and other embodiments may be combined or substituted as appropriate. Furthermore, the terms "first," "second," "third," etc. in the specification and claims are used to distinguish between terms to which these terms are attached, and do not limit the number or order of those terms.

[0108] As described above, the present disclosure is useful for semiconductor devices and methods for manufacturing semiconductor devices.

[0109] REFERENCE SIGNS LIST 1 semiconductor device 10 semiconductor chip 11 first electrode 12 second electrode 13 third electrode 15 first surface 16 second surface 21 first wiring member 22 second wiring member 25 conductive member 26 connection wiring 36 sealing material 40 spacer member 41 recessed portion

Claims

1. A semiconductor chip (10) having a first surface (15) and a second surface (16) opposite to the first surface (15), the first surface (15) being provided with a first electrode (11) and a second electrode (12) arranged at an interval from the first electrode (11); a first wiring member (21) made of a conductive plate-like member and on which the semiconductor chip (10) is placed so that the second surface (16) faces; a second wiring member (22) made of a conductive plate-like member and arranged at an interval from the first wiring member (21) in a direction perpendicular to the plate thickness direction of the first wiring member (21); a conductive member (25) made of a conductive member and stacked and connected to the first electrode (11) or the second electrode (12); and a connection wiring (26) connecting the conductive member (25) and the second wiring member (22). a first direction is a direction in which the conductive member (25) is stacked on the first electrode (11) or the second electrode (12), a second direction is a direction perpendicular to the first direction, and a third direction is a direction perpendicular to the first direction and the second direction, the conductive member (25) extends so as to protrude in at least one of the second direction and the third direction beyond the first electrode (11) or the second electrode (12) to which the conductive member (25) is connected, as viewed from the first direction, and the connection wiring (26) extends in a curved shape as viewed from the second direction or the third direction.

2. A semiconductor device according to claim 1, wherein a plurality of the semiconductor chips (10) are mounted on the first wiring member (21), and the conductive member (25) is connected across the first electrodes (11) or the second electrodes (12) of the plurality of semiconductor chips (10).

3. A semiconductor device according to claim 1 or 2, wherein a third electrode (13) is provided on the first surface (15) of the semiconductor chip (10) and is spaced apart from the first electrode (11) and the second electrode (12), and the conductive member (25) is connected to the first electrode (11), the second electrode (12), or the third electrode (13), and extends so as to protrude in at least one of the second direction and the third direction beyond the first electrode (11), the second electrode (12), or the third electrode (13) to which the conductive member (25) is connected, as viewed from the first direction.

4. A semiconductor device according to claim 1 or 2, wherein a third electrode (13) is provided on the second surface (16) of the semiconductor chip (10), and the third electrode (13) is connected to the first wiring member (21).

5. A semiconductor device according to any one of claims 1 to 4, wherein the conductive member (25) is arranged so as not to overlap the second wiring member (22) when viewed from the first direction.

6. A semiconductor device according to any one of claims 1 to 5, wherein the conductive member (25) is arranged inside the first wiring member (21) when viewed from the first direction.

7. A semiconductor device according to any one of claims 1 to 6, wherein the semiconductor chip (10) is a wide bandgap semiconductor.

8. A semiconductor device according to any one of claims 1 to 7, further comprising an insulating sealing material (36) disposed between the first wiring member (21) and the conductive member (25).

9. A semiconductor device according to any one of claims 1 to 8, wherein the conductive member (25) extends so as to protrude in at least one of the second direction and the third direction beyond the semiconductor chip (10) when viewed from the first direction.

10. A semiconductor device according to claim 9, further comprising an insulating spacer member (40) for supporting the conductive member (25) between the first wiring member (21) and the conductive member (25).

11. A semiconductor device according to claim 10, wherein a plurality of the spacer members (40) are provided, and the plurality of spacer members (40) are arranged at intervals from one another when viewed from the first direction.

12. A semiconductor device according to any one of claims 9 to 11, wherein a plurality of recesses (41) are provided on the surface of the conductive member (25) facing the first wiring member (21), and the plurality of recesses (41) are arranged at intervals from one another when viewed from the first direction.

13. A method for manufacturing a semiconductor device according to any one of claims 1 to 8, including a first step of connecting the conductive member (25) and the second wiring member (22) with a connecting wire (26), wherein the first step comprises the steps of: placing a detachable spacer member (40) between the first wiring member (21) and the conductive member (25); connecting the conductive member (25) and the second wiring member (22) with the connecting wire (26) that extends in a curved shape when viewed from the second direction or the third direction; and removing the spacer member (40) from between the first wiring member (21) and the conductive member (25).

14. A method for manufacturing a semiconductor device according to claim 13, wherein a plurality of recesses (41) are provided on a surface of the conductive member (25) facing the first wiring member (21), and the plurality of recesses (41) are arranged at intervals from one another when viewed from the first direction, and in the step of placing a detachable spacer member (40) between the first wiring member (21) and the conductive member (25), the spacer member (40) is placed in the recess (41).

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