Mounting pretreatment device, mounting system, and mounting pretreatment method

Abstract

The present invention provides a mounting pretreatment device, a mounting system, and a mounting pretreatment method capable of suppressing a reduction in bond strength on a bonding surface between an electronic component and a mounting substrate. A mounting pretreatment device 300 according to an embodiment performs mounting pretreatment on a bonding surface between an electronic component E and a mounting substrate BW prior to mounting the electronic component E on the mounting substrate BW, the mounting pretreatment device 300 including: a plasma treatment device 102 that applies a surface treatment using plasma to the bonding surface of the electronic component E and / or the mounting substrate BW; a cleaning device that cleans the electronic component E and / or the mounting substrate BW before and / or after the plasma treatment in the plasma treatment device 102; and a removal device 101 that, before the plasma treatment in the plasma treatment device 102, promotes the volatilization of a volatile component and removes the volatile component from a component supply body TW in which a sheet T having a sticky portion on the surface thereof is supported by a ring R and the electronic component E is stuck to the sheet T.

Description

Pre-mounting processing device, mounting system, and pre-mounting processing method

[0001] The present invention relates to a pre-mounting processing device, a mounting system, and a pre-mounting processing method.

[0002] Direct bonding is a method for mounting semiconductor chips, which are electronic components, to a mounting substrate. Direct bonding is a mounting method in which the connection terminals of the mounting substrate and semiconductor chip are directly bonded to each other without using bonding materials such as solder bumps. For example, the surfaces of the mounting substrate and the semiconductor chip (protective films such as SiO2 films) are terminated with hydroxyl groups. By bringing these surfaces into contact and applying pressure and heat, the mounting substrate and the semiconductor chip are bonded to each other through hydrogen bonds between the hydroxyl groups, which eventually change to covalent bonds via oxygen atoms. This results in a diffusion bond between the connection terminals of the mounting substrate and the semiconductor chip, forming a nearly integrated structure.

[0003] "Bonding" includes "temporary bonding" and "permanent bonding." Temporary bonding is the direct mounting (bonding) of an electronic component to a mounting substrate, while permanent bonding is the covalent bonding of the bonding surfaces of the temporarily bonded electronic component and mounting substrate by annealing. In the following explanation, "temporary bonding" will be referred to as "mounting."

[0004] Semiconductor chips are electronic components formed by dicing a wafer into small pieces, and are adhered to an adhesive sheet attached to a ring. The component consisting of the sheet to which the diced wafer is adhered and the ring is called a component supply body. Furthermore, the wafer on which the electronic components are mounted after being removed from the component supply body is called a mounting substrate.

[0005] When electronic components from a component supplier are directly bonded to a mounting substrate, the diced wafers and mounting substrates are pre-treated and cleaned beforehand. This pre-treatment involves surface treatment (activation and cleaning). Activation is a process that activates the surfaces of the electronic components and mounting substrates using active species such as ions and radicals generated by plasma-forming reactive gases. Activation refers to the severing of chemical bonds between molecules on the surfaces, etching oxide films formed on the surfaces of the electronic components and mounting substrates, and terminating the surfaces of the electronic components and mounting substrates with hydroxyl groups. Cleaning is a process that cleans the surfaces of the electronic components and mounting substrates using the active species such as ions and radicals generated. Cleaning refers to the removal of particles adhering to the surfaces by flicking them off or the decomposition and removal of organic matter.

[0006] In the following description, this activation process and cleaning process using plasma will be referred to as surface treatment, and the device that performs this surface treatment will be referred to as a plasma treatment device. Generally, plasma treatment devices can also perform processes other than surface treatment, and any process performed by a plasma treatment device that includes surface treatment will be broadly referred to as plasma treatment. This plasma treatment also includes reducing the pressure to generate plasma and increasing the pressure to release that pressure reduction. Pretreatment is sometimes referred to as pre-mounting treatment. Cleaning is a process in which particles and the like present on the surfaces of electronic components and mounting boards are cleaned with a liquid such as water, and the device that performs this cleaning process will be referred to as a cleaning device.

[0007] Japanese Patent Application Laid-Open No. 2020-021966

[0008] However, in such direct bonding, there are cases where the bonding strength at the bonding surface between the electronic component and the mounting substrate is reduced, which may lead to a deterioration in the quality of the product manufactured by bonding (mounting) the electronic component to the mounting substrate.

[0009] An object of the embodiments of the present invention is to provide a pre-mounting processing device, a mounting system, and a pre-mounting processing method that can suppress a decrease in the bonding strength at the bonding surface between an electronic component and a mounting board.

[0010] The pre-mounting treatment device of the embodiment is a pre-mounting treatment device that performs pre-mounting treatment of the bonding surfaces of the electronic component and the mounting substrate before mounting the electronic component on the mounting substrate, and includes: a plasma treatment device that performs surface treatment using plasma of the bonding surfaces of the electronic component and / or the mounting substrate; a cleaning device that cleans the electronic component and / or the mounting substrate before and / or after the plasma treatment in the plasma treatment device; and a removal device that promotes evaporation of volatile components from a component supply body in which a sheet T having an adhesive portion on its surface is supported by a ring R and on which electronic components E are adhered, and removes the volatile components before the plasma treatment in the plasma treatment device.

[0011] The mounting system of the embodiment includes the pre-mounting processing device, and a bonding device that removes the electronic components processed by the pre-mounting processing device from the component supply body and mounts them on the mounting board.

[0012] The pre-mounting treatment method of the embodiment is a method for performing pre-mounting treatment of the bonding surfaces of the electronic component and the mounting substrate before mounting the electronic component on the mounting substrate, and includes a surface treatment using plasma of the bonding surfaces of the electronic component and / or the mounting substrate, a cleaning treatment for cleaning the electronic component and / or the mounting substrate before and / or after the surface treatment, and a component supply body in which a sheet T having an adhesive portion on its surface is supported by a ring R and electronic components E are adhered to the sheet T, and the volatile components are removed by promoting evaporation of the volatile components before the surface treatment.

[0013] The embodiment of the present invention can suppress a decrease in the bonding strength at the bonding surface between the electronic component and the mounting board.

[0014] 1 is an explanatory diagram showing the processing of each part of a mounting system according to an embodiment; 2 is a simplified perspective plan view showing the configuration of a mounting system according to an embodiment; 3 is a cross-sectional view showing a removal device according to an embodiment, where (A) is a cross-sectional view taken along line b-b in (B), and (B) is a cross-sectional view taken along line a-a in (A); 4 is a cross-sectional view showing a plasma processing device according to an embodiment; 5 is a simplified configuration diagram showing a supply body cleaning device and a mounted substrate cleaning device of a mounting system; 6 is a graph showing changes in pressure inside a chamber in a removal device, where (A) shows a case where a component supply body is plasma-treated, (B) shows a case where an empty chamber is used and a case where a component supply body is stored and not plasma-treated, and (C) shows a case where the component supply body is heated in addition to (B); 7 is a flowchart showing an operation procedure according to an embodiment; 8 is a cross-sectional view of a removal device having a component detector; 9 is a cross-sectional view showing a modified removal device; 10 is a cross-sectional view of a modified removal device, where (A) is a cross-sectional view taken along line g-g in (B) showing a support section that supports multiple component supply bodies in a layered manner with spaces between them, and (B) is a cross-sectional view taken along line c-c in (A); 1A and 1B are cross-sectional views showing a modified example of a removal device, where (A) is a cross-sectional view showing that the support portion is pin-shaped, and (B) is a cross-sectional view taken along line dd of (A). 1B are cross-sectional views showing a modified example of a removal device, where (A) is a cross-sectional view taken along line ff of (B) showing that the inner bottom of the chamber also serves as the support portion, and (B) is a cross-sectional view taken along line ee of (A). 1B is a cross-sectional view of a removal device showing an example in which the heater of the heating portion is ring-shaped, and (B) is a bottom view of a component supplier and a heating portion. 1C is a cross-sectional view showing a modified example of a removal device. 1D is a simplified perspective plan view showing a mounting system in which the mounting portion has a plurality of bonding devices.

[0015] Hereinafter, embodiments of the present invention will be described with reference to the drawings. Note that the drawings are schematic diagrams, and the size, proportions, etc. of each part are exaggerated for ease of understanding.

[0016] 1 and 2 , a mounting system 100 according to this embodiment is an example of a system for mounting electronic components E supplied by a component supplier TW onto a mounting board BW. The mounting system 100 is composed of a pre-mounting processing unit X and a mounting unit Y. A pre-mounting processing device 300 serving as the pre-mounting processing unit X performs surface treatment (activation treatment, cleaning treatment) on the component supplier TW and the mounting board BW before mounting, and a bonding device 180 serving as the mounting unit Y mounts an electronic component E (semiconductor chip) picked up from the component supplier TW that has undergone pre-mounting treatment onto the mounting board BW that has also undergone pre-mounting treatment.

[0017] As shown in FIG. 1 , the component supply TW is a sheet T having an adhesive portion on its surface supported by a ring R, with electronic components E adhered to the sheet T. In the component supply TW of this embodiment, a wafer (semiconductor wafer) W is adhered to the center of the ring R of the sheet T. The wafer W is then diced into electronic components E. The electronic components E are, for example, semiconductor chips. The sheet T is a thin, stretchable member made of resin, and its surface is provided with adhesive portions having adhesive properties including a UV-curable resin whose adhesive strength can be reduced by irradiation with UV light. The mounting substrate BW is a wafer (semiconductor wafer, substrate) W on which electronic components E detached from the component supply TW are mounted (bonded).

[0018] The pre-mounting processing device 300 performs pre-mounting processing of the bonding surfaces of the electronic components E and the mounting substrate BW before mounting the electronic components E on the mounting substrate BW. As shown in Fig. 2, the pre-mounting processing device 300 of this embodiment can perform pre-mounting processing (surface processing) one by one on component supply bodies TW and mounting substrates BW that are stored in multiple pieces in a transport container F such as a FOUP (Front Opening Unified Pod) or a FOSB (Front Opening Shipping Box) and supplied from a previous process device, etc. The pre-mounting processing device 300 can also include a cleaning device that performs cleaning processing on the electronic components E and the mounting substrate BW.

[0019] The mounting system 100 is configured by arranging a plurality of chambers 11b, each housing an apparatus for performing various processes, around a base 11a of a box-shaped container that serves as a transfer chamber, according to the process. That is, the pre-mounting processing apparatus 300 that serves as the pre-mounting processing section X and the bonding apparatus 180 that serves as the mounting section Y are configured by the chambers 11b that perform various processes.

[0020] An FFU (Fan Filter Unit) (not shown) is provided on the ceiling of the base 11a, and is configured to generate a downflow of clean air to maintain a clean atmosphere inside the base 11a. Such an FFU may also be provided in the chamber 11b as needed. A transfer device 190 is provided inside the base 11a.

[0021] The base 11a is also provided with a load port 11c on which a transfer container F is mounted. The transfer container F containing unprocessed component supplies TW and mounting boards BW is mounted on the load port 11c. The component supplies TW and mounting boards BW are removed one by one from the transfer container F by a transfer device 190. The component supplies TW or mounting boards BW removed by the transfer device 190 are carried into each chamber 11b, processed, and removed.

[0022] The mounting system 100 of this embodiment may have a buffer device that temporarily stores the component supplier TW and the mounting board BW. This buffer device may be included in the mounting pre-processing unit X, or may be included in the mounting unit Y.

[0023] More specifically, the mounting system 100 of this embodiment is a system including a removal device 101, a plasma processing device 102, a supply cleaning device 110, a mounting substrate cleaning device 120, an adjustment processing device 130, a gauging device 140, an alignment device 150, a supply buffer device 160, a mounting substrate buffer device 170, a bonding device 180, a transport device 190, and a control device 200. The removal device 101, the plasma processing device 102, the supply cleaning device 110, the mounting substrate cleaning device 120, the adjustment processing device 130, the gauging device 140, the alignment device 150, the supply buffer device 160, the mounting substrate buffer device 170, the transport device 190, and the control device 200 constitute a mounting pre-processing device X, and the bonding device 180 and the control device 200 constitute a mounting unit Y.

[0024] The removal device 101 removes volatile components from the component supply TW. The plasma processing device 102 performs surface treatment on the component supply TW and the mounting substrate BW. The supply cleaning device 110 cleans the component supply TW, and the mounting substrate cleaning device 120 cleans the mounting substrate BW. The adjustment processing device 130 reduces the adhesive force of the sheet T on the component supply TW. The gauging device 140 positions the component supply TW, and the alignment device 150 positions the mounting substrate BW. The supply buffer device 160 temporarily stores the component supply TW, and the mounting substrate buffer device 170 temporarily stores the mounting substrate BW. The bonding device 180 detaches electronic components E from the component supply TW and mounts them on the mounting substrate BW. The transport device 190 transports the component supply TW and the mounting substrate BW between each unit and device. The control device 200 controls each unit of the mounting system 100. The following describes each part in detail.

[0025] [Removal Device] The removal device 101 is a device that promotes the volatilization of volatile components from the component supply body TW and removes the volatilized volatile components before plasma processing in the plasma processing device 102. As shown in FIG. 3 , the removal device 101 has a chamber 1, a support unit 2, an exhaust unit 3, a heating unit 4, a purge unit 5, and a pressure detector 6.

[0026] The chamber 1 of the removal device 101 is configured as one of the chambers 11b and is a container that stores the component supply TW before plasma processing. The chamber 1 in this embodiment is a container that can be evacuated. The chamber 1 is provided with an exhaust port 1a for exhausting gas from the chamber 1 and for discharging volatile components volatilized from the component supply TW, a purge hole 1b for opening to the atmosphere, and a detection port 1c for detecting pressure. The chamber 1 also has a loading / unloading port 1d on the front side shown in the figure for loading and unloading the component supply TW, which can be opened and closed by a shutter 1e shown by a dashed line on the front side in the figure.

[0027] The support part 2 supports the component supply TW stored in the chamber 1 before plasma processing. In this embodiment, the support part 2 is a plate-shaped member fixed in the chamber 1 and supports the ring R of the component supply TW via the sheet T. The support part 2 supports the area directly below the ring R located on the outer periphery of the sheet T, and therefore has an open surface on the sheet T opposite the surface to which the wafer W is adhered. In this embodiment, the outer shapes of the ring R and the sheet T are similar and the same size, so the support part 2 supports the ring R via the sheet T. However, if the outer shape of the ring R is larger than the outer shape of the sheet T or if the ring R has radial protrusions, the support part 2 may directly support the ring R. In other words, it is sufficient if the support part 2 can support the component supply TW by supporting the ring R.

[0028] More specifically, as shown in FIG. 3A, the support unit 2 is made up of a plate-like member 2a and protrusions 2b. The plate-like member 2a is a long, narrow plate-like member, and is provided so that its longitudinal direction is parallel to the direction in which the robot hand 191a is inserted into the chamber 1, as shown in FIG. 3B, for example. The plate-like members 2a are fixed to the bottom surface inside the chamber 1, and two plate-like members 2a are provided along two opposing inner side surfaces of the chamber 1. A plurality of protrusions 2b are provided on the surfaces of the two plate-like members 2a facing each other. A plurality of holes 2c are provided in the plate-like members 2a below the protrusions 2b. For example, a cylindrical heating unit 4, which will be described later, is inserted into the holes 2c.

[0029] The protrusions 2b are plate-like members that support the ring R of the component supply unit TW via the sheet T. The protrusions 2b contact and support the ring R at two points near the outer edge, so that the surface of the sheet T opposite to the surface to which the wafer W is adhered is open. As a result, when the component supply unit TW is supported on the support unit 2, the heating unit 4 arranged below the protrusions 2b faces the surface of the sheet T opposite to the surface to which the wafer W is adhered. Then, in the chamber 1, volatile components that volatilize from the sheet T and adhesive portions of the component supply unit TW supported on the support unit 2 are removed.

[0030] The exhaust unit 3 exhausts the pressure inside the chamber 1. In this embodiment, the exhaust unit 3 heats the component supply TW before plasma processing in the chamber 1 using the heating unit 4 described below, thereby promoting volatilization from the component supply TW and exhausting and removing the volatilized volatile components. As described below, regardless of whether the component supply TW is heated or not, volatilization from the component supply TW can also be promoted and the volatilized volatile components can be exhausted and removed by exposing the component supply TW to a reduced-pressure atmosphere created by the exhaust unit 3. The exhaust unit 3 exhausts the volatilized volatile components from the component supply TW before plasma processing in the chamber 1. The exhaust unit 3 includes a pressure-reducing device 3a, a pipe 3b, and a valve 3c. The pressure-reducing device 3a is connected to the exhaust port 1a via the pipe 3b provided with the valve 3c. The pressure-reducing device 3a reduces the pressure inside the chamber 1. The pressure-reducing device 3a is, for example, a vacuum pump connected to an exhaust line 3d and evacuating the chamber 1 through the exhaust port 1a. The pressure reducing device 3a also exhausts volatile components that have evaporated from the component supply TW. That is, the pressure reducing device 3a exhausts the inside of the chamber 1, thereby serving as an exhaust device that removes volatile components from the component supply TW.

[0031] (Heating Unit) The heating unit 4 heats the component supply TW before plasma processing in the chamber 1, thereby promoting the evaporation of volatile components from the component supply TW. In this embodiment, the heating unit 4 is disposed below the support unit 2. As a result, when the component supply TW is supported by the support unit 2, the heating unit 4 faces the surface of the component supply TW opposite to the surface to which the wafer W is adhered. The heating unit 4 is, for example, a heater that generates heat when energized, and multiple cylindrical heaters are arranged in a row. In FIG. 3, the heaters are cylindrical and extend in the left-right direction as viewed in the figure.

[0032] The heating temperature of the heating unit 4 is a temperature at which the volatile components volatilize from the component supply TW, but at which the sheet T and the adhesive portion are not damaged (burned, melted, softened, etc.), for example, 40 to 200°C, preferably 40 to 80°C. This temperature varies depending on the materials of the sheet T and the adhesive portion. Therefore, it is preferable to determine this temperature in advance by experiment, etc.

[0033] The purge unit 5 opens the depressurized interior of the chamber 1 to the atmosphere. The purge unit 5 has a pipe 5a and a valve 5b. The pipe 5a is connected to the purge hole 1b. A valve 5b is provided at one end of the pipe 5a connected to the purge hole 1b, and the other end of the pipe 5a is exposed to the outside of the removal device 101. When the valve 5b is closed and the valve 3c is opened, the depressurization device 3a can evacuate the interior of the chamber 1. When the depressurization device 3a evacuates the interior of the chamber 1, the interior of the chamber 1 is depressurized.

[0034] When the pressure inside the chamber 1 is reduced to a predetermined level, the valve 3c is closed and the valve 5b is opened, and the atmosphere is introduced through the purge hole 1b. Note that the purge section 5 may be configured to supply clean dry air (CDA) or N2 instead of the atmosphere. ２ In this case, an inert gas such as CDA or N may be introduced into the other end of the pipe 5a. ２ It is only necessary to connect a supply unit that supplies gas, etc. By introducing an inert gas, it is possible to prevent the component supplier TW and the components in the chamber 1, which are in a high temperature state, from being oxidized.

[0035] (Pressure Detector) The pressure detector 6 is a pressure gauge that detects the pressure inside the chamber 1. The pressure detector 6 is connected to a detection port 1c provided in the chamber 1. The pressure detector 6 is also connected to a control device 200, which will be described later, and the control device 200 controls the exhaust unit 3 (pressure reducing device 3a) and the heating unit 4 in accordance with the pressure detected by the pressure detector 6. For example, the exhaust unit 3 stops exhausting when the pressure detected by the pressure detector 6 reaches a preset pressure. For example, the exhaust unit 3 stops heating when the pressure detected by the pressure detector 6 reaches a preset pressure.

[0036] [Plasma Processing Apparatus] The plasma processing apparatus 102 is an apparatus (surface processing unit) that performs surface treatment using plasma on the bonding surfaces of the electronic components E and / or the mounting substrate BW before mounting the electronic components E on the mounting substrate BW. The surface treatment is a process that activates and cleans the surfaces (bonding surfaces) of the component supplier TW and the mounting substrate BW that will be bonded (mounted).

[0037] 4, the plasma processing apparatus 102 of this embodiment includes a chamber 10, which is one of the chambers 11b and whose interior can be depressurized, and which is provided with a stage 20, a gas inlet 30, a plasma generator 40, a mask 50, and an exhaust port 60. The chamber 10 also includes a loading / unloading port LN for loading and unloading a component supplier TW and a mounting substrate BW, and the loading / unloading port LN is configured to be openable and closable by a shutter SH. In FIG. 4, the shutter SH is indicated by a dashed line.

[0038] (Stage) The stage 20 supports the component supplier TW or the mounting board BW. In this embodiment, the component supplier TW or the mounting board BW is placed on the stage 20 after being carried into the chamber 10 through the loading / unloading port LN, which is opened by opening the shutter SH. The stage 20 in this embodiment is a placement area formed on the inner bottom surface of the chamber 10. In the following description, the direction from the stage 20 to the component supplier TW is referred to as upward or rising, and the direction from the component supplier TW to the stage 20 is referred to as downward or falling.

[0039] As shown in FIG. 4 , the stage 20 is provided with a driving unit 21 that raises and lowers the component supply unit TW or the mounting board BW. The driving unit 21 has rods 21a, 21b, and a driving mechanism 21c. The rods 21a and 21b are vertical bar-shaped members that airtightly penetrate the bottom of the chamber 10 and are movable up and down. A plurality of rods 21a are arranged at positions that can support the lower surfaces of the component supply units TW, and are rods on which the component supply units TW that are carried in and out of the chamber 10 are placed. A plurality of rods 21b are arranged at positions that can support the lower surfaces of the mounting boards BW, and are rods on which the mounting boards BW that are carried in and out of the chamber 10 are placed.

[0040] The drive mechanism 21c moves the rods 21a and 21b up and down, thereby raising and lowering the component supplier TW and the mounting board BW.

[0041] (Gas Inlet) The gas inlet 30 is an opening for introducing a reaction gas into the reduced pressure chamber 10. The gas inlet 30 is provided on the side of the chamber 10 so that the reaction gas can be introduced above the stage 20. A supply device 31 is connected to the gas inlet 30 via a pipe 31 a.

[0042] The supply device 31 supplies a reaction gas into the chamber 10 through the gas inlet 30. The reaction gas may be, for example, N ２ The reactive gas is used to clean the surface of the object to be treated by removing organic matter, to etch the oxide film formed on the surface of the object to be treated, and to activate the surface of the object to be treated by terminating it with hydroxyl groups. The reactive gas is also used to purge the chamber 10. Hereinafter, the space into which the reactive gas is introduced will be referred to as the gas space GA.

[0043] (Plasma Generator) The plasma generator 40 converts the reactive gas into plasma. This plasma generation generates active species such as ions and radicals. These active species are irradiated onto the joining surfaces of the component supplier TW and the mounting board BW, thereby activating and cleaning the respective surfaces. As shown in FIG. 4 , the plasma generator 40 includes an antenna 41, a power supply 42, and a matching box 43. The antenna 41 is provided outside the chamber 10 at a position corresponding to the upper part of the gas space GA. A window member 11d is provided in the chamber 10 between the antenna 41 and the gas space GA. The window member 11d is made of a dielectric material such as quartz. When a high-frequency voltage is applied to the antenna 41, the antenna 41 generates plasma P in the gas space GA through inductive coupling via the window member 11d.

[0044] The power supply 42 is connected to the antenna 41 and applies a high-frequency voltage to the antenna 41. The matching box 43 is a matching circuit connected between the power supply 42 and the antenna 41. The matching box 43 stabilizes the discharge of the plasma P by matching the impedance on the input side and the impedance on the output side.

[0045] (Mask) As shown in Fig. 4, the mask 50 is provided in the chamber 10. The mask 50 exposes the diced wafers W (electronic components E) of the component supply body TW and covers a portion of the ring R and the sheet T. The mask 50 is arranged so as to surround the periphery of the diced wafers W in the center of the ring R. More specifically, the mask 50 is a ring-shaped member that covers the exposed surface of the sheet T other than the area where the diced wafers W are adhered and the top surface of the ring R.

[0046] A plurality of support shafts 50a protrude from the bottom of the mask 50 along the inside of the outer circumferential circle of the mask 50. The support shafts 50a are inserted into holes 11e provided in the bottom of the chamber 10 so as to be able to move up and down. Stoppers 11f are provided on the upper edges of the holes 11e. The stoppers 11f are protrusions formed to restrict the descent of the mask 50 to a predetermined height position. In this embodiment, the stoppers 11f maintain the height of the mask 50 when the mounting board BW is placed on it at the same height as when the mask 50 covers the component supplier TW.

[0047] The mask 50 is provided so as to be able to move up and down by a drive unit 51. The drive unit 51 has a rod 51a and a drive mechanism 51b. The rod 51a is a vertical rod-shaped member that passes through the bottom of the chamber 10 in an airtight manner so as to be able to move up and down.

[0048] A plurality of rods 51a are arranged at positions where they can support the underside of the mask 50. In this embodiment, three rods 51a protrude through the holes 11e and contact the three support shafts 50a, respectively. In other words, the holes 11e have through-hole portions through which the rods 51a pass. Note that in FIG. 4, the support shafts 50a and rods 51a are not shown in the actual cross section to make the operation easier to understand. The drive mechanism 51b raises and lowers the mask 50 by moving the rods 51a up and down. In addition, another support shaft is urged downward by a urging member, urging the mask 50 downward.

[0049] (Exhaust Port) As shown in Fig. 4, the exhaust port 60 is an opening for exhausting gas (e.g., reaction gas) from the chamber 10. In this embodiment, the exhaust port 60 is provided on the side surface of the chamber 10. A pressure reducing device 61 such as a vacuum pump is connected to the exhaust port 60 via a pipe 61a. The pressure reducing device 61 reduces the pressure inside the chamber 10 via the exhaust port 60. The pressure reducing device 61 also exhausts the reaction gas from the chamber 10.

[0050] [Supplier Cleaning Apparatus] The supplier cleaning apparatus 110 is a cleaning apparatus that cleans electronic components E before and / or after plasma processing in the plasma processing apparatus 102. The supplier cleaning apparatus 110 of this embodiment is a processing chamber that cleans the component supplier TW. The supplier cleaning apparatus 110 performs a cleaning process that cleans particles present on the component supplier TW with a liquid such as water. In this embodiment, particles remaining on the plasma-treated component supplier TW or particles generated by the plasma processing are cleaned with a cleaning liquid L. The objects to be cleaned are the surfaces of the electronic components E, the spaces between the electronic components E, and the adhesive surface of the sheet T, and particles adhering to these surfaces are cleaned and removed. As shown in Figure 5, the supplier cleaning device 110 has a cleaning chamber 111 (chamber 11b) which is a container in which the cleaning process is performed, a support part 112 which supports the component supplier TW, a rotation mechanism 113 which rotates the support part 112, a cup 114 which receives the splashed cleaning liquid L from around the component supplier TW, and a supply part 115 which supplies the cleaning liquid L.

[0051] The cleaning chamber 111 is provided with an opening 111a through which the component supply TW is carried in and out, and the opening 111a is configured to be openable and closable by a shutter 111b. The component supply TW is carried in and out of the cleaning chamber 111 by the transport device 190 through the opening 111a with the shutter 111b open. At this time, the cup 114 is retracted by a lifting mechanism (not shown). The upper surface of the support part 112 is provided with an eccentric pin that rotates and holds the outer periphery of the component supply TW. The supply part 115 is provided with a nozzle 115a that drips cleaning liquid L and a movement mechanism 115b that moves the nozzle 115a.

[0052] The cleaning process is performed by supplying cleaning liquid L from nozzle 115a to the surface to be treated of component supply body TW, which is held by an eccentric pin of support portion 112 and rotated by rotation mechanism 113. DIW, for example, is used as the cleaning liquid L. In this case, hydroxyl groups are imparted to the surfaces of electronic components E in addition to the water cleaning.

[0053] Although not shown, the rotation mechanism 113 of the supply element cleaning device 110 is equipped with an expanding device. The expanding device expands the sheet T of the component supply element TW supported by the support portion 112 to increase the spacing between the electronic components E. With this configuration, the supply element cleaning device 110 can also clean particles present in the spacing between the electronic components E.

[0054] [Mounting Substrate Cleaning Apparatus] The mounting substrate cleaning apparatus 120 is a cleaning apparatus that cleans the mounting substrate BW before and / or after the plasma treatment in the plasma treatment apparatus 102. The mounting substrate cleaning apparatus 120 of this embodiment is a processing chamber that cleans the mounting substrate BW. The mounting substrate cleaning apparatus 120 performs a cleaning process that cleans particles present on the mounting substrate BW with a liquid such as water. In this embodiment, particles remaining on the plasma-treated mounting substrate BW or particles generated by the plasma treatment are cleaned with a cleaning liquid L. Similar to the supplier cleaning apparatus 110 shown in FIG. 5 , the mounting substrate cleaning apparatus 120 includes a cleaning chamber 111 that is a container that performs the cleaning process therein, a support 112 that supports the mounting substrate BW, a rotation mechanism 113 that rotates the support 112, a cup 114 that receives the cleaning liquid L that splashes from around the mounting substrate BW, and a supply unit 115 that supplies the cleaning liquid L. When, for example, DIW is used as the cleaning liquid L, hydroxyl groups are added to the surface of the mounting substrate BW in addition to the water cleaning.

[0055] [Adjustment Processing Device] The adjustment processing device 130 adjusts the sheet T of the component supply body TW after cleaning by irradiating it with UV light, thereby reducing the adhesive strength of the sheet T. As shown in FIG. 1 , the adjustment processing device 130 has an irradiation device 131 that irradiates the entire area below the stored component supply body TW with UV light by scanning a UV light source.

[0056] [Gauging Device] The gauging device 140 positions the component supply body TW. The gauging device 140 is a contact-type centering device that adjusts the position by contacting the outer periphery of the component supply body TW so that the center of the component supply body TW coincides with a reference position set inside.

[0057] [Alignment Device] The alignment device 150 positions the mounting substrate BW. The alignment device 150 is a non-contact (optical) centering device that adjusts the position of the mounting substrate BW so that the center of the mounting substrate BW coincides with a reference position provided inside.

[0058] [Supplier Buffer Apparatus] The supplier buffer apparatus 160 temporarily stores component suppliers TW before they are carried into the bonding apparatus 180. As shown in FIG. 1 , the supplier buffer apparatus 160 has a storehouse 161 that can store multiple component suppliers TW stacked at intervals.

[0059] [Mounted Board Buffer Apparatus] The mounted board buffer apparatus 170 temporarily stores the mounted boards BW before they are carried into the bonding apparatus 180. The mounted board buffer apparatus 170 has a storehouse 171 that can store a plurality of mounted boards BW stacked at intervals.

[0060] [Bonding Apparatus] The bonding apparatus 180 is included in the mounting section Y and is a processing chamber that detaches electronic components E from the component supply body TW that has been processed by the plasma processing apparatus 102 and mounts them on a mounting substrate BW. The bonding apparatus 180 includes a supply mechanism, a pickup mechanism, and a mounting mechanism, all of which are not shown. The bonding apparatus 180 uses the pickup mechanism to pick up electronic components E from the component supply body TW that have been carried into the supply mechanism by the transport device 190, and transfers them to the mounting mechanism. The mounting mechanism mounts the electronic components E on the mounting substrate BW that has been carried into the bonding apparatus 180 by the transport device 190. Note that, as shown in FIG. 1 , the bonding apparatus 180 of this embodiment flips over the picked-up electronic components E and mounts the pre-mounted surface on the surface of the mounting substrate BW that has also undergone pre-mounting processing.

[0061] [Transport Device] The transport device 190 transports component supply items TW and mounting boards BW between the load port 11c and each chamber 11b, between each chamber 11b, and between the supply item buffer device 160, the mounting board buffer device 170, and the bonding device 180. In other words, transport by the transport device 190 also includes transporting component supply items TW and mounting boards BW between the pre-mounting processing unit X and the mounting unit Y. As shown in FIG. 2 , the transport device 190 has a transport robot 191 and a moving mechanism 192. The transport robot 191 is of a double-arm type, and a pair of robot hands 191a support the component supply items TW and mounting boards BW, respectively. The moving mechanism 192 moves the transport robot 191 and positions it relative to the load port 11c, each chamber 11b, and the bonding device 180. The robot hand 191 a carries in and out the component supply bodies TW and the mounting boards BW to and from each transport container F, each chamber 11 b and the bonding device 180 .

[0062] [Control Device] The control device 200 is a computer that controls each part of the mounting system 100. The control device 200 has a processor that executes programs, a memory that stores various information such as the programs and operating conditions, and a drive circuit that drives each element. That is, the control device 200 controls the removal device 101, the plasma processing device 102, the supply item cleaning device 110, the mounting substrate cleaning device 120, the adjustment processing device 130, the gauging device 140, the alignment device 150, the supply item buffer device 160, the mounting substrate buffer device 170, the bonding device 180, and the transport device 190. That is, the control device 200 is also a computer that controls each part of the mounting pre-processing unit X and the mounting unit Y.

[0063] [Causes of Decrease in Bonding Strength] In direct bonding, in which electronic component E is directly bonded to a substrate without using a bonding material such as a solder bump, there have been cases where the bonding strength has decreased. There are various factors that affect the bonding strength, but one of the factors that causes the decrease in bonding strength is thought to be insufficient pre-processing before mounting. In other words, it is thought that factors that inhibit bonding remain on the bonding surface between the electronic component and the mounting substrate.

[0064] Therefore, we investigated the factors in the pre-treatment. In particular, we investigated the influence of plasma treatment. As a result, we found that there was a difference in the pressure change during plasma treatment between the case where the component supply body TW was plasma treated and the case where the mounting board BW was plasma treated. In the case where the component supply body TW was plasma treated, a pressure fluctuation occurred at the end of the plasma surface treatment, which was not observed in the case where the mounting board BW was plasma treated.

[0065] FIG. 6 shows an example of the change in pressure during decompression of the chamber 10. FIG. 6 is a graph with pressure on the vertical axis and time on the horizontal axis. Surface treatment using plasma is performed in a decompressed atmosphere. Therefore, the pressure inside the chamber 10 is first reduced, and when a predetermined pressure is reached, surface treatment using plasma is started. In this embodiment, this predetermined pressure is called the base pressure.

[0066] 6A shows the change (progression) in the pressure inside the chamber 10 when a component supply body TW is plasma-treated in the plasma treatment apparatus 102. As shown in FIG. 6A, when the pressure inside the chamber 10 is reduced to the base pressure, a reactive gas to be converted into plasma is introduced into the chamber 10. The introduction of the reactive gas causes the pressure inside the chamber 10 to rise to the surface treatment pressure.

[0067] Then, due to the balance between exhaust and introduction, the surface treatment pressure is maintained constant, as shown by the almost horizontal straight line in Figure 6 (A). In this state, power is applied to the reactive gas to convert it into plasma. The activated species generated by converting the reactive gas into plasma perform surface treatment on the component supply body TW carried into the plasma treatment device 102. After a predetermined treatment time t0 has elapsed, the plasma surface treatment is terminated. The supply of reactive gas is stopped, and the application of power is stopped. Then, the pressure inside the chamber 10 decreases due to continued exhaust. Thereafter, exhaust is stopped, and the atmosphere is introduced, raising the pressure inside the chamber 10 to atmospheric pressure. This completes the plasma treatment.

[0068] The pressure fluctuation observed at the end of the surface treatment of the component supply body TW is shown by a circle in Figure 6(A). This fluctuation in the surface treatment pressure was not observed when the surface treatment of the mounting board BW was performed. The inventors of the present application focused on the change in amplitude due to the increase or decrease in pressure during the surface treatment.

[0069] The component supply body TW and the mounting board BW have different configurations. The component supply body TW is a sheet T attached to a ring R, with diced wafers (semiconductor wafers) W adhered to it. In contrast, the mounting board BW is a substrate consisting of only semiconductor wafers. The difference between the two is the presence or absence of the sheet T. Therefore, it was inferred that the pressure fluctuations during surface treatment of the component supply body TW were caused by the sheet T.

[0070] The adhesive portion of the sheet T holds the electronic component E and is made of a material that loses its adhesiveness when the electronic component E is peeled off during mounting. Such a material is a curable resin such as a UV-curable resin or a thermosetting resin. During mounting, the resin is cured to lose its adhesiveness just before the electronic component E is peeled off from the sheet T. Therefore, until then, the resin remains uncured in order to hold the electronic component E. Water easily dissolves in uncured resin. Furthermore, the sheet T itself is made of resin and absorbs moisture.

[0071] When a component supply TW having such components is subjected to plasma treatment, first, as the pressure is reduced, volatile components such as highly volatile adhesive portions, moisture absorbed by the sheet T, moisture dissolved in the resin, and solvent components begin to volatilize. When the plasma surface treatment begins, the heat of the plasma raises the temperature of the component supply TW. This gradually raises the temperature of the sheet T to be surface treated and the curable resin that is the adhesive portion on its surface, and further volatilizes the moisture absorbed by the sheet T, the moisture and solvent components dissolved in the resin, and the resin components themselves as gas. Therefore, it is thought that pressure fluctuations occur due to volatile gases (volatile components) after a certain amount of time has passed during the surface treatment.

[0072] Furthermore, when evaporation occurs from the sheet T or the adhesive curable resin, the temperature drops due to the heat of vaporization, which stops the evaporation. Once the evaporation stops, it begins again due to the heat of the plasma. It can be inferred that this repetition causes the observed oscillatory pressure fluctuations.

[0073] Volatile components volatilizing from the resin sheet T and adhesive portion of the component supply TW generally contain carbon. Substances with small molecular weights are more likely to volatilize. It is believed that when volatile components containing low molecular weight carbon volatilize from the component supply TW during plasma surface treatment, they are absorbed into the plasma atmosphere and ionized. The ionized volatile components collide with and react with portions of the surfaces of the electronic components E. It is believed that compounds or carbon-containing functional groups are formed on portions of the surfaces of the electronic components E that react with the ionized volatile components, rendering those portions inactive. These compounds or carbon-containing functional groups cannot be removed even by cleaning with the supply cleaning device 110. As a result, it is believed that a decrease in the bonding strength occurs at the bonding surface between the component supply TW and the mounting board BW.

[0074] In other words, various factors can be considered to cause a decrease in bonding strength. One factor is when the surface treatment of the component supply body TW by plasma is insufficient, which is thought to be due to volatiles volatilizing from the sheet T or the adhesive portion. Such a situation that causes a decrease in bonding strength can be considered a defect in the pre-mounting treatment. It can also be considered a defect in the mounting treatment.

[0075] 6B, the change in pressure when the empty chamber 10 is evacuated and depressurized in the same manner as in plasma processing is shown by the dashed line, and the change in pressure when a component supply TW is placed in the chamber 10 and the chamber is evacuated and depressurized in the same manner without performing surface processing is shown by the broken line. Although not shown for ease of viewing, the change in pressure when a mounting board BW is placed in the chamber 10 and the pressure is similarly depressurized is the same as when the chamber 10 is empty. In other words, it is the same as the change shown by the dashed line.

[0076] 6B, since exhaust is continued without performing surface treatment, the pressure in both the component supplier TW and the mounting board BW exceeds the base pressure and continues to decrease. Also, the pressure change in the mounting board BW matches that when the chamber 10 is empty, but the pressure changes in the component supplier TW and the mounting board BW do not match.

[0077] At the same elapsed time after the start of evacuation, the pressure in the chamber 10 housing the component supply TW is always higher than that in the chamber 10 housing the mounting board BW. This can be explained by considering that volatile components are volatilizing from the component supply TW, as described above. In other words, as the pressure is reduced, volatilization occurs from the component supply TW, and this volatilization increases the pressure. It can be inferred that the volatilization pressure is added to the decompression pressure, so the pressure increases by the amount of volatilization. In the case of FIG. 6(B), the pressure difference is large near the base pressure. This indicates that the amount of volatilization from the component supply TW increases near the base pressure. This is thought to be because relatively volatile components volatilize in pressure regions higher than the base pressure, while less volatile components also volatilize at pressures lower than the base pressure.

[0078] [Regarding Elimination of Bonding Interference Factors] From the above observations and inferences, it can be seen that one of the bonding interference factors can be eliminated by removing volatile components from the component supply TW in advance before performing surface treatment. Therefore, in the mounting system 100 of this embodiment, the removal device 101 removes volatile components from the component supply TW before activating and cleaning the surfaces of the electronic components E in the plasma treatment device 102 of the pre-mounting treatment device 300. Furthermore, in the removal device 101 of this embodiment, the heating unit 4 heats the component supply TW in the reduced-pressure chamber 1 to promote volatilization of the volatile components from the component supply TW.

[0079] That is, to prevent volatilization of unnecessary components during plasma surface treatment, the amount of volatile components generated from the component supply TW is reduced in advance to an amount that does not affect the bond strength before surface treatment. In other words, it is not necessary to remove all of the volatile components. This is referred to as a removal process. Here, "not affecting the bond strength" means that the bond strength at the bonded surface between the component supply TW and the mounting substrate BW does not decrease below the required predetermined strength. The predetermined strength refers to the bond strength obtained when, after the temporary bonding in the mounting process, annealing is performed, and the bonded surfaces between the component supply TW and the mounting substrate BW are finally converted to covalent bonds via oxygen atoms, resulting in a nearly integrated bond. The relationship between the bond strength and the amount of volatilization can be confirmed and determined in advance through experiments, etc. The amount of volatilization can be observed by measuring the pressure within chamber 1, as described below.

[0080] FIG. 6C shows an example of pressure changes during decompression in chamber 1 in the removal apparatus 101 of this embodiment. The dashed-dotted line in the graph of FIG. 6C, like FIG. 6B, indicates the pressure changes during decompression in an empty chamber 1. Therefore, it shows the pressure changes when there is no component supply TW in chamber 1 and no volatilizable components. The dashed line in the graph of FIG. 6C, like FIG. 6B, indicates the pressure changes when there is a component supply TW in chamber 1 and volatilizable components are present. The solid line in the graph of FIG. 6C indicates the pressure changes when there is a component supply TW in chamber 1 (and volatilizable components are present) and heating is performed by the heating unit 4 to further promote volatilization. Note that the exhaust volume is constant in all states. Furthermore, chamber 1 of the removal apparatus 101 and chamber 10 of the plasma processing apparatus 102 have the same chamber volume and exhaust volume.

[0081] As shown in Figure 6(C), in either case, the pressure in chamber 1 drops rapidly from the start of decompression and gradually becomes constant. As shown by the dashed and solid lines, when a volatile component such as a component supply TW is present, once the pressure in chamber 1 is reduced to about 4000 Pa, the pressure drop becomes more gradual compared to when the chamber is empty (dash-dotted line), and slight fluctuations in pressure occur. This is thought to be mainly due to the moisture adsorbed on the sheet T and adhesive portions beginning to volatilize. Therefore, the pressure in chamber 1 drops as the moisture volatilizes. This condition also occurs when plasma processing is performed on a component supply TW in the plasma processing device 102.

[0082] As shown by the solid line in the graph of Figure 6(C), when heating is performed, the pressure drop is even more gradual than when empty (dash-dotted line). This is thought to be because heating causes water to volatilize more rapidly. Of course, it is not limited to water that volatilizes; it is also thought that volatilizing components such as solvents in the resin components may also volatilize.

[0083] As shown by the dashed and solid lines in the graph of FIG. 6C , when a component supply TW is present in the chamber 1, i.e., when volatilizable components are present, a period of time passes during which the pressure decrease becomes more gradual as the pressure is reduced. During this period, the pressure fluctuates oscillatedly. This tendency is more pronounced when heating is performed than when heating is not performed. As the pressure decreases, a larger amount of less volatile components volatilizes, resulting in a slower decrease in pressure. This volatilization is thought to be due to increased volatilization from the sheet T and the adhesive portion on its surface. The adhesive portion is made of uncured curable resin, and possible causes include air and moisture trapped inside the adhesive portion escaping from the resin, and the solvent components and the resin itself volatilizing.

[0084] Here, the reason why the pressure decreases more slowly while volatile components continue to volatilize from the component supply TW than when this volatilization does not occur will be explained using the following equation. If the pressure inside chamber 1 is P, the amount of minute gas flowing into chamber 1 (leakage amount) is Le, the amount of volatile components volatilized from the component supply TW is Vo, and the exhaust volume of pressure reducing device 61 (exhaust device) is Ex, the relationship shown in equation (1) below is established. P = Le + Vo - Ex (1) If no volatile components have volatilized from the component supply TW, then P = Le - Ex, and the pressure becomes constant when Le and Ex are balanced. If volatile components are volatilizing, equation (1) shows that the pressure inside chamber 1 will be higher than normal by the amount of Vo.

[0085] The amount of Vo repeatedly increases and decreases due to the interaction of the following four phenomena: (a) As the pressure inside the chamber 1 decreases, the boiling point also decreases; (b) The boiling point differs depending on the volatile component; (c) When a volatile component evaporates, it takes heat of vaporization from the surroundings (e.g., the sheet T or adhesive portion), causing the surrounding temperature to decrease; (d) Even within the same component, some components are more likely to volatilize than others (e.g., volatile components adsorbed on the surface or adhesive portion of the sheet T are more likely to volatilize, while volatile components adsorbed inside the sheet T or adhesive portion are less likely to volatilize). Therefore, when the inflow volume Le and the exhaust volume Ex are constant, P changes with changes in Vo.

[0086] Specifically, due to event (a), the pressure inside chamber 1 decreases, which lowers the boiling point of the volatile component, causing the volatile component to begin volatilizing. However, due to event (c), the temperature of sheet T and the adhesive portion decreases, causing the temperature of the volatile component to also decrease. As a result, the temperature of the volatile component drops below the lowered boiling point as the pressure is reduced, and volatilization stops. However, as the pressure inside chamber 1 decreases further, event (a) occurs again, further lowering the boiling point of the volatile component, causing the volatile component to begin volatilizing again. This repetition causes the amount of Vo to repeatedly increase and decrease. Furthermore, due to the interaction of events (b) and (d), different volatile components repeatedly start and stop volatilizing within a certain pressure range. As a result, the amount of Vo increases and decreases in an even more complex manner.

[0087] In the plasma processing in the plasma processing apparatus 102, when a reactive gas is introduced for plasma surface processing, the pressure inside the chamber 10 rises, and the boiling point of the volatile components also rises, temporarily stopping the volatilization of the volatile components. After that, the component supply body TW is heated by the heat of the plasma, and when the boiling point of the volatile components is exceeded, volatilization occurs.

[0088] As the volatilization of volatile components progresses, the amount of volatilization decreases or disappears, and the rate of pressure decrease increases again as exhaust progresses. The dashed and solid lines in Figure 6(C) show that the pressure line is nearly horizontal, the pressure decrease is gradual, and after an oscillatory pressure change, the slope of the pressure decrease becomes steep. When this slope becomes steep, it can be said that the volatilization of volatile components has almost ceased. In other words, at this point, the volatile components have been removed from the component supply body TW.

[0089] That is, before the surface treatment using plasma, the component supply body TW can be exposed to a reduced pressure atmosphere or further heated to promote the volatilization of the volatile components, thereby performing a removal treatment to remove the volatile components in advance.

[0090] From the above, in the removal device 101 containing the component supply body TW, when the pressure inside the chamber 1 is reduced, the rate of pressure decrease slows down and then increases, it is determined that the evaporation from the component supply body TW has stopped, i.e., the volatile components have been removed, and then surface treatment using plasma is performed, thereby preventing reactions that would inhibit bonding from occurring during surface treatment.

[0091] However, if the removal process is insufficient, unnecessary components will volatilize during the plasma surface treatment, affecting the bond strength, while excessive removal will result in reduced productivity. Therefore, it is necessary to properly control the end point (endpoint) of the removal process. In other words, the end point of the removal process is the point at which the amount of volatile components volatilized from the component supply TW has decreased to a level that does not affect the bond strength.

[0092] The volatilization of the volatile components is accelerated in order to quickly reduce the amount of volatile components volatilizing from the component supply body TW to an amount that does not affect the joining strength. For this purpose, in the removal device 101, the component supply body TW is subjected to a process of exposing it to a reduced pressure atmosphere or a heat treatment while being exposed to a reduced pressure atmosphere before the surface treatment.

[0093] When heating is performed while reducing pressure in the removal device 101, the pressure inside the chamber 1 changes as shown by the solid line in the graph of FIG. 6C. As the pressure decreases, moisture evaporates first from the sheet T and the adhesive portions on its surface. Therefore, at the same exhaust volume as when no volatile components are present, as shown by the dashed-dotted line in FIG. 6C, the pressure decreases more slowly than when no volatile components are present. After and / or simultaneously with the moisture evaporation, evaporation occurs primarily from the adhesive portions. As a result, a period of time occurs during which the pressure decrease becomes even more gradual due to the increase in the amount of evaporation, and the amplitude of the pressure increase / decrease becomes more rapid. After this period of time during which the slope of the pressure change is small and the amplitude is rapid, the amplitude of the pressure increase / decrease becomes smaller, and the pressure suddenly decreases. This indicates that evaporation from the component supply TW has finished. The point at which the slope of the pressure change changes is thus determined as the end point (endpoint) of the removal process. The pressure in chamber 1 at time t1 from the start of pressure reduction at this endpoint is designated as pressure Ep1, and is indicated by a white circle in FIG. 6(C).

[0094] In the removal device 101, the control device 200 of this embodiment stops heating by the heating unit 4 and terminates the removal process when the pressure inside the chamber 1 detected by the pressure detector 6 reaches a preset pressure. The preset pressure here can be the endpoint pressure Ep1 described above. The pressure is, for example, 3 to 50 Pa, and is set in advance in the memory of the control device 200.

[0095] In the removal device 101, when the chamber 1 is only exposed to a reduced pressure atmosphere without heating, the pressure inside the chamber 1 changes as shown by the dashed line in the graph of Figure 6(C). As the pressure decreases, moisture volatilizes. Therefore, at the same exhaust volume as when no volatilizable components are present (shown by the dashed line), the pressure decreases more slowly than when no volatilizable components are present. However, the amount of volatilization per unit time is smaller and the pressure decreases more quickly than when heating is performed.

[0096] After and / or simultaneously with the evaporation of moisture, evaporation occurs from volatile components derived from the sheet T and the adhesive portion. This results in a time period during which the pressure decrease becomes gradual due to the increase in the amount of evaporation, and the amplitude of the pressure increase / decrease becomes more pronounced. After a period during which the amplitude of this pressure change becomes more pronounced and the slope becomes smaller, a period comes when the amplitude of the pressure increase / decrease becomes smaller and the pressure decrease becomes more rapid. In this case, too, the point at which the slope of the pressure change changes (time t2 from the start of pressure reduction) is set as the endpoint, and the pressure Ep2 at that point is indicated by a white circle in FIG. 6C . The pressure Ep2 is, for example, 0.01 to 10 Pa. The pressure Ep2 can be stored in the memory of the control device 200 as a set pressure.

[0097] 3 without the heating unit 4. The control device 200 controls the pressure reducing device 3a of the discharge unit 3 in accordance with the pressure detected by the pressure detector 6. The discharge unit 3 stops exhausting by the pressure reducing device 3a when the pressure detected by the pressure detector 6 reaches a preset pressure. Alternatively, the discharge unit 3 stops exhausting by the pressure reducing device 3a when the rate of decrease in the pressure detected by the pressure detector 6 decreases from immediately after exhausting and then increases. During the decompression, volatile components volatilized from the component supply TW that has been carried into the chamber 1 and supported by the support unit 2 are exhausted by the pressure reducing device 3a.

[0098] [Operation] The operation of the mounting system 100 of this embodiment as described above will be described with reference to the flowchart of Fig. 7 in addition to the above-mentioned Figs. 1 to 6. A mounting method for mounting an electronic component E on a mounting board BW according to the following procedure is also one aspect of this embodiment. Note that the following description follows the flowchart of Fig. 7, but includes a state in which each process is performed simultaneously in parallel.

[0099] 2, a transport container F containing a component supply TW and a transport container F containing a mounting board BW are mounted on the load port 11c. The transport robot 191 receives the component supply TW from the transport container F on the load port 11c and transports the component supply TW to the removal device 101.

[0100] The removal device 101 removes volatile components that have evaporated from the adhesive portions and sheet T of the component supply TW (volatile component removal process: step S100). First, the shutter 1e of the chamber 1 opens, and the robot hand 191a of the transport robot 191 supporting the component supply TW is inserted through the carry-in / out opening 1d. The robot hand 191a places the component supply TW on the support unit 2 (see FIG. 3). With the shutter 1e closed and the valve 5b closed, the pressure reducing device 3a begins evacuating. The heating unit 4 also begins heating. As a result, the component supply TW is heated while the pressure inside the chamber 1 is reduced, and the volatile components volatilize from the component supply TW. When the pressure detected by the pressure detector 6 reaches the set pressure, the heating unit 4 stops heating.

[0101] Furthermore, by closing valve 3c, exhaust of gas from inside chamber 1 by decompression device 3a is stopped. Thereafter, by opening valve 5b, the decompressed inside chamber 1 is opened to the atmosphere. Shutter 1e opens, and the robot hand 191a of the transfer robot 191 is inserted through the transfer port 1d and receives the component supply object TW supported by the support portion 2. After the robot hand 191a transfers the component supply object TW out of chamber 1 through the transfer port 1d, shutter 1e closes. Thereafter, the robot hand 191a delivers the component supply object TW to the plasma processing device 102.

[0102] The plasma processing apparatus 102 activates and cleans the surfaces of the electronic components E by performing surface treatment with plasma (supply body surface treatment process: step S101). First, the drive unit 51 raises the rod 51a, which raises the mask 50 against the biasing force of the biasing member. By raising the mask 50, the mask 50 is retracted so as not to obstruct the entry of the robot hand 191a of the transfer robot 191 into the chamber 10. Next, the shutter SH opens, and the robot hand 191a of the transfer robot 191 supporting the component supply body TW is inserted through the loading / unloading port LN. The robot hand 191a positions the component supply body TW above the rod 21a.

[0103] The driving mechanism 21c raises the rod 21a, lifting the component supplier TW from the robot hand 191a, and the robot hand 191a retreats. After the robot hand 191a retreats, the shutter SH closes. Then, the pressure reducing device 61 evacuates the chamber 10 to create a vacuum.

[0104] The driving mechanism 21c lowers the rod 21a to place the component supply body TW on the stage 20. Furthermore, the driving unit 51 lowers the rod 51a, and the mask 50 is lowered by the biasing force of the biasing member. Then, the mask 50 comes into contact with the ring R and stops. As a result, the mask 50 covers the ring R and the sheet T with the mask 50.

[0105] In this state, as shown in FIG. 4 , the supply device 31 supplies reactive gas to the gas space GA, and the power supply 42 applies high-frequency power to the antenna 41, generating plasma P in the gas space GA. The reactive gas is converted into plasma, generating active species such as ions and radicals, which activate and clean the surfaces of the electronic components E. The reactive gas is exhausted from the exhaust port 60 by the pressure reducing device 61. The active species that tend to move toward the vicinity of the outer periphery of the wafer W, i.e., the vicinity between the ring R and the electronic components E, are prevented from contacting the ring R and the exposed surfaces of the sheet T by the mask 50 (indicated by the arrows in the figure). Therefore, etching of the exposed surfaces of the ring R and the sheet T by the active species is suppressed. When the control device 200 determines that the surface treatment time (t0) has elapsed, it terminates the plasma surface treatment. In this way, the plasma processing device 102 activates and cleans the surfaces of the component supply body TW through surface treatment (supply body surface treatment process: step S101).

[0106] After the surface treatment of the component supply TW, the drive unit 51 raises the rod 51a. The drive unit 51 raises the mask 50 against the biasing force of the biasing member, separating the mask 50 from the ring R. The drive mechanism 21c raises the rod 21a, thereby lifting the component supply TW. The shutter SH opens, and the robot hand 191a is inserted through the loading / unloading port LN. The drive mechanism 21c lowers the rod 21a, and the component supply TW is placed on one of the robot hands 191a of the double arm and handed over. The robot hand 191a then carries the component supply TW out through the loading / unloading port LN.

[0107] While the surface treatment of the component supply body TW is being performed, the transport robot 191 receives the mounting substrate BW from the transport container F onto the other robot hand 191a of the double arm. The transport robot 191 receives the component supply body TW from the rod 21a of the plasma processing device 102, and delivers the mounting substrate BW to the plasma processing device 102. The plasma processing device 102 activates and cleans the surface of the mounting substrate BW by performing surface treatment using plasma (mounting substrate surface treatment process: step S102).

[0108] The procedure for plasma treatment of the mounting substrate BW is the same as that of the aforementioned supplier surface treatment step, except that in the case of the mounting substrate BW, the volatile component removal step is not performed, and only the surface treatment using plasma is performed.

[0109] The transport robot 191 delivers the surface-treated component supply TW to the support 112 of the supply cleaning device 110. The supply cleaning device 110 rotates the surface-treated component supply TW delivered to the support 112 using the support 112 and the rotation mechanism 113 while supplying cleaning liquid L to the component supply TW. In this manner, the component supply TW is cleaned (supply cleaning process: step S103). This removes particles generated by the etching effect of the plasma surface treatment. At this time, the sheet T of the supply cleaning device 110 is expanded by the expanding device, and the electronic components E are cleaned with the spacing between them widened. After cleaning by supplying cleaning liquid L, the sheet is rotated at high speed to shake off the cleaning liquid L and dry. After drying, the rotation of the support 112 is stopped, and the expanding device releases the sheet T, causing it to contract to its original state, restoring the spacing between the electronic components E to its original state.

[0110] After the surface treatment of the mounting substrate BW in the plasma processing apparatus 102 is completed, the transfer robot 191 receives the mounting substrate BW from the plasma processing apparatus 102. The transfer robot 191 delivers the received mounting substrate BW to the mounting substrate cleaning apparatus 120. The mounting substrate cleaning apparatus 120 supplies cleaning liquid L to the mounting substrate BW while rotating the mounting substrate BW. In this manner, the mounting substrate BW is cleaned (mounting substrate cleaning process: step S104). After cleaning by supplying cleaning liquid L, the mounting substrate BW is dried by rotating at high speed to shake off the cleaning liquid L. This mounting substrate cleaning process includes a state in which it is performed simultaneously with the supply body cleaning process. In other words, the time during which the component supply body TW is cleaned and the time during which the mounting substrate BW is cleaned overlap.

[0111] After the cleaning process of the component supply TW is completed, the transport robot 191 receives the component supply TW from the supply cleaning device 110 and hands it over to the gauging device 140. The gauging device 140 aligns the component supply TW (positioning process: step S105). After the alignment is complete, the transport robot 191 receives the component supply TW from the gauging device 140 and hands it over to the adjustment processing device 130. The adjustment processing device 130 performs an adjustment process to reduce the adhesive strength of the sheet T by irradiating the component supply TW with UV light (adjustment process: step S106). These positioning and adjustment processes overlap with the mounting substrate cleaning process.

[0112] After the cleaning process of the mounting substrate BW is completed, the transfer robot 191 receives the mounting substrate BW from the mounting substrate cleaning device 120 and transfers it to the alignment device 150. The alignment device 150 aligns the mounting substrate BW (positioning step: step S107).

[0113] After the adjustment process is completed, the transport robot 191 receives the component supply TW from the adjustment processing device 130 and hands it over to the supply buffer device 160. After the alignment of the mounting board BW is completed, the transport robot 191 receives the mounting board BW from the alignment device 150 and hands it over to the mounting board buffer device 170.

[0114] In this way, the component supply items TW and the mounting boards BW are stored in the supply item buffer unit 160 and the mounting boards BW (storing process: step S108). After storing the component supply items TW and the mounting boards BW, when the bonding apparatus 180 becomes ready to accept them, the transport robot 191 receives the component supply items TW and the mounting boards BW and hands them over to the bonding apparatus 180. That is, in response to a signal from the bonding apparatus 180 indicating that processing is complete and the bonding apparatus 180 is ready to accept them, the transport robot 191 removes the component supply items TW and the mounting boards BW from the supply item buffer unit 160 and the mounting boards BW from the mounting board buffer unit 170. The transport robot 191 then carries the component supply items TW and the mounting boards BW into the bonding apparatus 180. In the bonding apparatus 180, electronic components E are picked up from the component supply items TW and mounted on the mounting boards BW (mounting process: step S109).

[0115] [Effects] (1) The pre-mounting treatment device 300 of this embodiment is a pre-mounting treatment device 300 that performs pre-mounting treatment of the bonding surfaces of the electronic component E and the mounting substrate BW before mounting the electronic component E on the mounting substrate BW, and includes: a plasma treatment device 102 that performs surface treatment using plasma on the bonding surfaces of the electronic component E and / or the mounting substrate BW; a cleaning device that cleans the electronic component E and / or the mounting substrate BW before and / or after the plasma treatment in the plasma treatment device 102; and a removal device 101 that promotes volatilization of volatile components from a component supply body TW in which a sheet T having an adhesive portion on its surface is supported by a ring R and to which electronic components E are adhered before the plasma treatment in the plasma treatment device 102, thereby removing the volatile components.

[0116] The mounting system 100 of this embodiment includes a pre-mounting processing device 300 and a bonding device 180 that detaches the electronic component E processed by the pre-mounting processing device 300 from the component supply body TW and mounts it on a mounting board BW.

[0117] The pre-mounting treatment method of this embodiment is a method for performing pre-mounting treatment of the bonding surfaces of the electronic component E and the mounting board BW before mounting the electronic component E on the mounting board BW, and includes a surface treatment using plasma of the bonding surfaces of the electronic component E and / or the mounting board BW, a cleaning treatment for cleaning the electronic component E and / or the mounting board BW before and / or after the surface treatment, and a step of promoting evaporation of volatile components from a component supply body TW in which a sheet T having an adhesive portion on its surface is supported by a ring R and the electronic component E is adhered to the sheet T before the surface treatment, thereby removing the volatile components.

[0118] Therefore, volatile components can be discharged from the component supply body TW before plasma treatment. In particular, volatile components can be discharged from the sheet T having the adhesive portion. This reduces the amount of volatile components volatilized from the component supply body TW during plasma surface treatment. Therefore, it is possible to prevent the volatile components volatilized from the component supply body TW from bonding to the surfaces of the electronic components E of the component supply body TW as compounds or carbon-containing functional groups. In other words, the active and clean state of the surfaces of the electronic components E is not contaminated by volatile components volatilized from the sheet T or the adhesive portion. Therefore, it is possible to prevent a decrease in the bonding strength at the bonding surface between the component supply body TW and the mounting board BW.

[0119] Furthermore, the volatile components volatilized from the component supplier TW can be removed in the chamber 1 of the removal device 101, which is separate from the plasma processing device 102. With this configuration, the inside of the plasma processing device 102 can be prevented from being contaminated by the volatile components volatilized from the component supplier TW.

[0120] (2) The removal device 101 has a chamber 1 that stores the component supply TW, an exhaust section 3 that evacuates the chamber 1, and a heating section 4 that heats the component supply TW. By heating the component supply TW within the chamber 1 using the heating section 4, volatilization from the component supply TW is promoted, and the volatilized volatile components are discharged and removed by the exhaust section 3.

[0121] In this way, by heating in a reduced pressure atmosphere before performing plasma treatment, volatile components can be evaporated more quickly from the component supply body TW, thereby shortening the pretreatment time and enabling high-speed mounting.

[0122] 6C, when heating is performed while reducing the pressure in the removal device 101, the volatilization of the volatile components is promoted, so that the end point is reached earlier. In other words, the removal process can be performed reliably and quickly.

[0123] (3) The removal device 101 has a pressure detector 6 that detects the pressure inside the chamber 1, and the heating unit 4 stops heating when the pressure detected by the pressure detector 6 reaches a preset pressure. The pressure inside the evacuated chamber 1 is affected by volatilization from the component supplier TW inside the chamber 1. When volatile components volatilize from the component supplier TW into the evacuated chamber 1, the rate at which the pressure inside the chamber 1 decreases slows. As volatilization progresses and the amount of volatilization decreases, the rate at which the pressure decreases increases. In this way, the state of pressure drop due to exhaust inside the chamber 1 changes depending on the state of volatilization from the component supplier TW, and a point in time (endpoint) at which the slope of the pressure change switches occurs.

[0124] In this case, a decrease in the amount of volatilization means that the volatile components have been removed from the component supply TW. Therefore, the endpoint can be said to be a pressure that ensures the volatilization time for the volatile components. In other words, by observing the pressure change in the chamber 1 with the pressure detector 6, it is possible to detect (determine) whether the volatile components have been removed and whether the volatilization time has been ensured. Therefore, the component supply TW can be brought into a state where the volatile components have been removed at least to the extent that no problems occur during the mounting process.

[0125] Furthermore, by setting the endpoint pressure to a set pressure while heating under reduced pressure, the timing for stopping heating can be set. If the volatile components are not removed sufficiently, unnecessary components will volatilize during plasma processing, affecting the bonding strength. If the removal process is excessive, productivity will decrease. By properly controlling the end point (endpoint) of the removal process, necessary volatile components can be reliably removed and productivity can be increased.

[0126] (4) The mounting pre-treatment unit X has a plasma treatment unit 102, which has a stage 20 on which the component supply body TW is placed, a chamber 10 capable of reducing the pressure inside, a plasma generator 40 that generates activated species by converting a reactive gas into plasma, and a mask 50 that is provided in the chamber 10 and exposes the wafer W while covering a portion of the ring R and the sheet T.

[0127] This prevents etching of exposed portions of the ring R and the sheet T. After a certain amount of volatile components is removed from the component supply TW in the removal device 101, the surfaces of the electronic components E are activated and cleaned by the plasma treatment device 102. This prevents a decrease in the bonding strength at the bonding surface between the component supply TW and the mounting board BW.

[0128] Furthermore, it is possible to realize narrow spacing between connection terminals, which was previously impossible due to contact between bonding members made of bumps of solder, gold, copper, aluminum, etc. on the connection terminals, and it is possible to create a high-density package.

[0129] [Modifications] The pre-mounting processing device 300, which is the pre-mounting processing unit X of this embodiment, and the mounting system 100 can also be configured in the following modifications.

[0130] (1) As shown in FIG. 8 , the removal device 101 of this embodiment may be provided with a component detector 7 that detects the amount of a specific component in the gas within the chamber 1. In this case, the component detector 7 detects the amount of volatile components volatilized from the component supply TW as the amount of the specific component. The heating unit 4 stops heating and / or evacuation when the amount of the specific component detected by the component detector 7 or the change in the amount of the specific component becomes equal to or less than a predetermined set amount. In other words, when the amount of the specific component or the change in the amount of the specific component becomes equal to or less than a predetermined set amount (endpoint), the control device 200 determines that the volatilization time has been secured, and stops heating by the heating unit 4 and / or stops evacuation by the evacuation unit 3.

[0131] More specifically, a quadrupole mass spectrometer (Q-mass) that detects components through a detection port 1c formed in the chamber 1 is used as the component detector 7. The component detector 7 ionizes the gas present in the chamber 1 and separates and measures the generated ions based on their mass. In other words, the component detector 7 analyzes the mass of ions generated from the gas present in the chamber 1 and detects the amount of each mass present.

[0132] In this case, for example, a component specific to the component supply TW can be selected as the specific component. By selecting a component originating from the sheet T or adhesive portion of the component supply TW, other than the volatile component present in the chamber 1 (for example, moisture adsorbed by the chamber wall), it is possible to suppress the evaporation of the volatile component during the surface treatment.

[0133] Such components volatilized from the removal device 101 appear as noise in the amount of pressure change. In this embodiment, the amount of ions derived from the volatile components volatilized from the component supplier TW is detected. This makes it possible to more accurately measure the amount of volatile components volatilized from the component supplier TW.

[0134] Therefore, the mass of ions derived from the volatile components volatilized from the component supplier TW is determined in advance, and ions having the same mass as the determined mass are monitored as the amount of volatile components volatilized from the component supplier TW. In this manner, the amount of ions derived from the volatile components volatilized from the component supplier TW is detected. That is, the amount of components is detected by monitoring ions having the same mass as the mass of ions derived from the volatile components volatilized from the component supplier TW. When the detected amount or change in the detected amount of ions derived from the volatile components volatilized from the component supplier TW becomes a set amount or less, the control device 200 stops heating by the heating unit 4 and / or stops exhaust by the exhaust unit 3.

[0135] It is necessary to prevent the ions generated in the component detector 7 from being subjected to forces due to collisions with other molecules during the period from ionization to detection. Therefore, the component detector 7 is preferably attached to the detection port 1c of the chamber 1 via a differential pumping system in order to prevent the generated ions from colliding with other molecules.

[0136] (2) The heating unit 4 may stop heating after a predetermined time has elapsed since the start of heating in a reduced pressure atmosphere, during which the volatile components volatilize. More specifically, the time from the start of heating until the pressure detected by the pressure detector 6 or the amount of a specific component detected by the component detector 7 decreases to a level that does not affect the bonding strength is determined in advance by experiment, etc. This time is set in the control device 200 as a set time (predetermined time), and when the set time has elapsed since the start of heating, the control device 200 stops heating by the heating unit 4. This simplifies the judgment process and allows the processing time to be constant. Note that heating may start when decompression begins.

[0137] (3) In the case of an embodiment in which the above-described heating is not performed, the removal device 101 does not need to have the heating unit 4. In this case, the discharge unit 3 exposes the component supply TW before plasma processing to a reduced-pressure atmosphere created by the discharge unit 3 in the chamber 1, thereby promoting volatilization from the component supply TW and discharging and removing the volatilized volatile components. In other words, the discharge unit 3 may remove the volatilized volatile components from the component supply TW simply by evacuating and reducing the pressure inside the chamber 1. This allows the structure of the removal device 101 to be simplified.

[0138] In this case, the pressure detector 6 may be used to control the pressure reducing device 3a. That is, exhaust may be stopped when the pressure detected by the pressure detector 6 reaches a preset pressure. Also, the component detector 7 described above may be used to control the pressure reducing device 3a instead of the pressure detector 6. That is, the discharge unit 3 may be configured to stop exhaust by the pressure reducing device 3a when the amount of a specific component detected by the component detector 7 reaches a preset amount.

[0139] Alternatively, a volatilization time required for the volatile components to volatilize to an extent that the bonding strength is no longer affected may be set as a set time in the control device 200, and when the set time has elapsed since the start of decompression, the control device 200 may stop exhaust by the pressure reducing device 3a of the exhaust unit 3. In other words, the exhaust unit 3 may stop exhaust by the pressure reducing device 3a after the volatilization time, which is the time required for the volatilization of the volatile components to be completed, has elapsed after the start of exhaust by the pressure reducing device 3a, and is determined in advance by an experiment or the like.

[0140] (4) As shown in Fig. 9, in addition to the heating unit 4, the chamber 1 may have an air inlet 1f and an outlet 1a, and the outlet 3 may have a circulation path connected to the blower 3e, trap 3g, and supply device 3f, the air inlet 1f, and the outlet 1a. The air inlet 1f is an opening for supplying gas into the chamber 1. A supply device 3f is connected to the air inlet 1f as a supply source for supplying gas into the chamber 1. The gas supplied into the chamber 1 may be, for example, the ambient atmosphere, CDA, or N ２ In this embodiment, N ２ Gas is used.

[0141] The exhaust port 1a is an opening for exhausting gas from the chamber 1 and for exhausting volatile components volatilized from the component supply body TW. The blower 3e circulates the gas supplied from the supply device 3f into the chamber 1. The blower 3e is a device that sucks in gas from one surface and blows out gas from the other surface of the blower 3e. The blower 3e may be any device that can move gas. For example, a fan or a pump may be used.

[0142] The trap 3g captures the volatile components volatilized from the component supplier TW. The trap 3g has a hollow pipe shape and can capture the volatile components volatilized from the component supplier TW inside. For example, the inside of the trap 3g can be cooled. When the volatile components volatilized from the component supplier TW collide with the inside of the trap 3g, heat is removed, causing the volatile components to sublimate (precipitate) from a gas into a solid. As a result, the volatile components adhere to the inside of the trap 3g.

[0143] In this embodiment, the pressure reducing device 3a, the blower 3e, the supply device 3f, the trap 3g, the exhaust port 1a, and the air inlet 1f are connected by piping 3b and valve 3c. For example, as shown in Fig. 9, one end of the first T-shaped piping 3b1 is connected to the exhaust port 1a via valve 3c1. Valves 3c2 and 3c3 are connected to the remaining two ends of piping 3b1. The pressure reducing device 3a is connected to the end of piping 3b1 connected to valve 3c2, and one end of trap 3g is connected to the end of piping 3b1 connected to valve 3c3.

[0144] One end of a second T-shaped pipe 3b1 is connected to air inlet 1f via valve 3c4. Valves 3c5 and 3c6 are connected to the remaining two ends of pipe 3b1. The end of pipe 3b1 connected to valve 3c5 is connected to supply device 3f, and the other surface of blower 3e is connected to the end connected to valve 3c6.

[0145] The other end of the trap 3g is connected to one surface of the air blower 3e via a pipe 3b2. With the above structure, the exhaust unit 3 is connected to the exhaust port 1a and the air inlet 1f, and N ２ Gas supply and N ２ Gas circulation can be performed.

[0146] Next, the operation of the discharge unit 3 in this embodiment will be described. First, it is assumed that the component supplier TW has been previously loaded into the chamber 1 and supported by the support unit 2, and that the valves 3c1 to 3c6 are closed. The control device 200 controls the discharge unit 3 to open the valves 3c1 and 3c2, and start exhausting the gas in the chamber 1 using the pressure reducing device 3a. After the gas in the chamber 1 has been exhausted, the valves 3c1 and 3c2 are closed.

[0147] Next, the valves 3c4 and 3c5 are opened, and N is introduced into the chamber 1 by the supply device 3f. ２ Gas is supplied until the pressure inside the chamber 1 becomes the same as atmospheric pressure. ２ After the gas is supplied, valves 3c4 and 3c5 are closed and heating is started by heating unit 4. When the heating temperature reaches a preset temperature, control device 200 opens valves 3c1, 3c3, 3c6, and 3c4 and operates blower 3e.

[0148] When the heating temperature reaches a preset temperature (for example, 40 to 200° C.), the volatile components start to volatilize from the component supplier TW. That is, the volatile components volatilized from the component supplier TW fly out into the chamber 1 as gas.

[0149] When this volatilization begins, the control device 200 opens valves 3c1, 3c3, 3c6, and 3c4 and operates the blower 3e, thereby starting the circulation of gas within chamber 1 by the exhaust unit 3. The volatile components volatilized from the component supplier TW are captured by the trap 3g. The gas within chamber 1 is exhausted from chamber 1, and after the volatile components are removed, it is sent back into chamber 1. In this way, the gas within chamber 1 is circulated, capturing and gradually removing the volatile components from the gas within chamber 1. In this case, the blower 3e and the trap 3g serve as an exhaust device that removes the volatile components volatilized from the component supplier TW.

[0150] The removal of such volatile components is carried out for a predetermined time. The predetermined time can be determined in advance through experiments or the like to be the time required for the volatile components to be removed to an extent that does not affect the bonding strength. This determined time is set in the control device 200 as the predetermined time. The control device 200 stops the circulation after the predetermined time and exhausts the gas in the chamber 1 to the outside of the chamber 1. In other words, when the predetermined time has elapsed, the control device 200 stops the blower 3e and closes the valves 3c3, 3c4, and 3c6. Next, the valves 3c1 and 3c2 are opened, and the gas in the chamber 1 is exhausted by the pressure reducing device 3a.

[0151] As described above, in this embodiment, the gas in the chamber 1 is heated and circulated to remove volatile components from the component supply TW. After the predetermined time has elapsed, the gas circulation and heating are stopped. After the heating is stopped, the gas in the chamber 1 is exhausted and returned to the ambient atmosphere. At this time, a waiting time may be allowed for cooling until oxidation of the component supply TW is no longer promoted, or air may be continuously introduced and exhausted to promote cooling. This also removes volatile components that have evaporated from the component supply TW from immediately after heating is stopped until the component supply TW cools. After the component supply TW reaches a state where it can be removed, i.e., a temperature that does not promote oxidation or a temperature at which volatile components do not volatilize, the component supply TW is removed from the chamber 1.

[0152] According to this embodiment, even without a reduced pressure, the component supply TW is heated to promote the volatilization of the volatile components from the component supply TW, and the volatile components can be removed efficiently. ２ The amount of gas used can be reduced.

[0153] The endpoint (predetermined time) for removing the volatile components is preferably set so that the removal of the volatile components is completed reliably to an extent that does not affect the bonding, and can be completed in the shortest time possible. In this embodiment, this endpoint is referred to as the second volatilization time. The second volatilization time is determined, for example, as follows.

[0154] The second volatilization time is set based on the exhaust time t1 from the start of decompression until pressure Ep1 is reached in the embodiment described above in which volatile components are removed by decompressing while heating. Pressure Ep1 is the pressure at the position indicated by the white circle on the solid line in Figure 6(C), and is the endpoint pressure when heat is applied to the component supplier TW in a decompressed atmosphere. In this embodiment, this pressure Ep1 and the exhaust time t1 from the start of decompression until pressure Ep1 is reached are also calculated in advance. The calculated pressure Ep1 and exhaust time t1 are stored in the control device 200.

[0155] Additionally, an arbitrary heating time for heating the gas supplied into chamber 1 while circulating it is stored in control device 200. For example, the heating time is set to the exhaust time t1 plus 30 seconds. Control device 200 then performs heating for this arbitrary heating time. After heating, the gas in chamber 1 is exhausted. The pressure detector 6 detects the ultimate pressure at exhaust time t1 after exhaust begins, and control device 200 stores this ultimate pressure.

[0156] Next, the control device 200 compares the ultimate pressure with the pressure Ep1. If the ultimate pressure is equal to or less than the pressure Ep1, the amount of volatile components volatilized from the component supplier TW has decreased to an amount that will not cause problems during the mounting process. Therefore, the control device 200 stores the arbitrary heating time as the second volatilization time.

[0157] If the ultimate pressure is higher than pressure Ep1, the control device 200 resets the arbitrary heating time to a longer time. For example, it adds 30 seconds to the current arbitrary heating time and stores it as a new arbitrary heating time. Then, for the reset heating time, it performs heating on another component supplier TW while circulating the gas supplied into the chamber 1, and again compares the ultimate pressure at exhaust time t1 with pressure Ep1. The control device 200 repeats this process until the ultimate pressure becomes equal to or lower than pressure Ep1.

[0158] Note that if the ultimate pressure in the initial measurement is equal to or lower than pressure Ep1, the heating time may be excessive. Therefore, for example, if the ultimate pressure is 10% or more lower than pressure Ep1, it is preferable to optimize the heating time in the same way as when the ultimate pressure is higher than pressure Ep1. Specifically, a time 30 seconds shorter than the arbitrary heating time is re-stored as the arbitrary heating time, a heating process is performed on a different component supplier TW, the ultimate pressure at exhaust time t1 is measured, and the ultimate pressure is compared with pressure Ep1. The control device 200 repeats this process until the ultimate pressure is within 10% of pressure Ep1. If the ultimate pressure exceeds pressure Ep1, the optimal heating time is determined by adding 30 seconds, for example, 15 seconds, to the heating time.

[0159] In the above example, the specified width of the pressure for optimization is set to 10%, but this value can be set by finding the optimum value through experiments or the like.

[0160] In the above description, the ultimate pressure is compared with the pressure Ep1, but the time from the start of exhaust until the pressure Ep1 is reached may be measured and compared with the exhaust time t1. In this case, too, the arbitrary heating time (second volatilization time) to be determined can be optimized, as described above.

[0161] In this way, by determining the second volatilization time (endpoint) and circulating the gas based on this second volatilization time to perform the volatile component removal process, the removal process can be performed efficiently without having to reduce the pressure to near Ep1 and measure the pressure each time.

[0162] A component detector 7 such as that described above may be provided, and when the amount of a specific component in the circulating gas reaches a predetermined set amount (end point), it may be determined that the volatilization time has been secured, and heating may be stopped by the heating unit 4.

[0163] Alternatively, the gas may be supplied from the supply device 3f through the air inlet 1f by the supply device 3f and discharged from the outlet 1a by the blower 3e while being heated by the heating unit 4 without circulating the gas. In this case, heating by the heating unit 4 is stopped when the amount of a specific component detected by the component detector 7 reaches a preset amount. In other words, the endpoints and the like are the same as those described above. Since the gas is not circulated, the gas path can be simplified. Instead of supplying gas from the air inlet 1f, the shutter 1e may be slightly opened to introduce outside air.

[0164] (5) While the removal device 101 in the above-described embodiment is a sheet-type device that processes component supplies TW one by one, it may also be a batch-type device that processes multiple component supplies TW at once. For example, as shown in FIGS. 10A and 10B , the support unit 2 supports multiple component supplies TW in a stacked manner with a gap between them. That is, multiple protrusions 2b are provided in a stacked manner on the surfaces of two plate-shaped members 2a facing each other. The plate-shaped members 2a are provided with multiple holes 2c below the protrusions 2b through which cylindrical heating units 4 are inserted. In the chamber 1, volatile components volatilizing from the sheets T and adhesive portions of the multiple component supplies TW supported by the support unit 2 are removed. This improves processing efficiency.

[0165] 10A, the loading / unloading opening 1d may be larger than the loading / unloading opening 1d of the removing device 101 of the above-described embodiment. Alternatively, one loading / unloading opening 1d may be provided corresponding to each of the multiple component suppliers TW mounted on the support unit 2. When the loading / unloading opening 1d is larger than the loading / unloading opening 1d of the removing device 101 of the above-described embodiment, the shutter 1e may also be larger than the shutter 1e of the removing device 101 of the above-described embodiment. When one loading / unloading opening 1d is provided corresponding to each of the multiple component suppliers TW mounted on the support unit 2, a shutter 1e may be provided for each loading / unloading opening 1d.

[0166] (6) The support unit 2 is not limited to the above-described embodiment as long as it can support the component supply unit TW within the chamber 1. For example, as shown in FIG. 11(A), the support unit 2 may be pin-shaped. FIG. 11(A) is a side cross-sectional view of the removal device 101, and FIG. 11(B) is a bottom view of the cross section taken along line dd in FIG. 11(A). In this case, as shown in FIG. 11(B), the heating unit 4 is preferably provided so that its longitudinal direction is perpendicular to the direction in which the robot hand 191a is inserted into the chamber 1. Furthermore, the support unit 2 is provided in a position that does not interfere with the robot hand 191a and the heating unit 4 and can support the ring R of the component supply unit TW.

[0167] Alternatively, as shown in FIG. 12(A), the support 2 may be the inner bottom of the chamber 1. FIG. 12 is a cross-sectional view of the removal device 101, with FIG. 12(A) being a side cross-sectional view taken along line ff in FIG. 12(B), and FIG. 12(B) being a top view of the cross-section taken along line ee in FIG. 12(A). In this case, the removal device 101 is provided with the drive unit 21 used in the plasma processing device 102. The component supply TW is carried into the chamber 1 by the robot hand 191a. After being carried into the chamber 1, the component supply TW is transferred to the drive unit 21 and then supported by the support unit 2. In this case, the heating unit 4 is provided inside the support unit 2 so as not to interfere with the rod 21a of the drive unit 21, as shown in FIG. 12(B). In this manner, the component supply TW can be heated by radiation and conduction. Therefore, the component supply TW can be efficiently heated.

[0168] In the heating unit 4 in Fig. 12(A), the hatched area in the center is the heater. This heater is a circular plate heater, but it may be a plurality of cylindrical heaters, as in Fig. 3. The heating units 4 in Figs. 3, 8, 9, and 14 may also be circular plate heaters.

[0169] Furthermore, as shown in FIGS. 13A and 13B, the heater may be ring-shaped. FIG. 13A is a cross-sectional view of a cylindrical ring-shaped heater, and FIG. 13B is a bottom view of the heater of the component supply body TW and the heating unit 4 in FIG. 13. The ring-shaped heater is disposed in a position corresponding to the exposed portion of the sheet T. By disposing the heater only in the exposed portion of the sheet T, where the volatile components volatilize over a large area, the configuration can be simplified and power consumption can be reduced. The ring-shaped heater may also be flat. Alternatively, multiple ring-shaped heaters with different diameters may be disposed concentrically. This can achieve uniform heating and promote the volatilization of the volatile components. The heater may be disposed above the component supply body TW or on both the top and bottom sides. However, disposing the heater on the bottom is preferable because it can be closer to the sheet T while avoiding adhesion of volatile components to the heater and direct heating of the electronic components E.

[0170] (7) After the volatile component removal process, UV light may be irradiated onto the component supply unit TW. By doing so, even if volatile components that have evaporated during the volatile component removal process reattach to the wafer W, the volatile components adhering to the surface of the wafer W can be decomposed and removed. As shown in FIG. 14 , the irradiation device 9 can be arranged to irradiate UV light through a quartz window 1g provided above the chamber 1 of the removal device 101. Furthermore, UV light irradiation may be performed after the volatile component removal process and before the plasma processing process, even if the removal device 101 is not used. Similar effects can be obtained.

[0171] (8) The UV light irradiation may be performed in the volatile component removal step. This facilitates decomposition and removal of volatile components. It also prevents re-adhesion to the wafer W.

[0172] (9) Furthermore, a heating lamp 4a may be provided instead of the above-described irradiation device 9. In the volatile component removal process, volatilization can be further promoted by heating the wafer W from above through the quartz window 1g. Of course, the heating unit 4 may be a lamp 4a instead of a heater.

[0173] The heating temperature of the component supplier TW may be measured by a temperature detector 8. The temperature detector 8 is, for example, a thermocouple. As shown in FIG. 14 , the temperature detector 8 is inserted into the chamber 1 from the bottom of the chamber 1. The tip of the temperature detector 8 is positioned near the wafer W of the component supplier TW so as not to interfere with the heating unit 4 and the robot hand 191 a.

[0174] (10) In the above-described embodiment, the pressure at the point when the slope of the pressure change changes is defined as the set pressure (endpoint). However, the end point may also be set based on the pressure change per unit time (ΔP / Δt). That is, exhaust and / or heating may be stopped when a preset set pressure change is reached. For example, the control device 200 stores the pressure change when there is no component supplier TW. Then, the control device 200 correlates the pressure in chamber 1 with the pressure change per unit time (ΔP / Δt) at that pressure based on the stored data. Then, in step S100, the control device 200 monitors the pressure in chamber 1 and the pressure change per unit time (ΔP / Δt) at that pressure. The control device 200 compares the stored pressure change per unit time (ΔP / Δt) with the monitored pressure change per unit time (ΔP / Δt) and determines that the end point has been reached when the difference in the pressure change is equal to or less than a threshold value.

[0175] (11) In a configuration without the heating unit 4, the exhaust unit 3 may stop exhausting when the pressure detected by the pressure detector 6 indicates that the rate of pressure decrease from the start of exhausting has decreased compared to immediately after the start of exhausting and then increased. For example, the control device 200 may determine that volatilization of volatile components from the component supplier TW has been completed when the rate of pressure decrease from the start of exhausting detected by the pressure detector 6 has decreased compared to immediately after the start of exhausting and then increased. As shown in FIG. 6C , the rate of pressure decrease is large immediately after the start of decompression and then decreases. The point at which the rate of decrease further increases is set as the endpoint. Alternatively, the point at which the rate of change increases after observing micro-oscillations of pressure fluctuations may be set as the endpoint.

[0176] (12) In an aspect including the heating unit 4, the heating unit 4 may stop heating when the pressure detected by the pressure detector 6 decreases from the start of evacuation to a rate that is lower than that immediately after evacuation started and then increases. In this case, the control device 200 may determine that volatilization of volatile components from the component supplier TW is complete when the pressure detected by the pressure detector 6 decreases from the rate that is lower than that immediately after evacuation started and then increases. The endpoint may also be the point at which the pressure decrease rate increases, then decreases, and then becomes even larger, or the point at which the rate of change increases after observing micro-oscillations of pressure fluctuations.

[0177] (13) In a configuration in which gas is heated by the heating unit 4, a configuration in which gas circulation by the air blower 3e and / or exhaust by the pressure reducing device 3a is performed after heating is stopped can be applied. That is, after heating by the heating unit 4 is stopped upon completion of volatilization of the volatile components, the chamber 1 may be ventilated and cooled by, for example, circulating the gas by the air blower 62 and / or exhausting by the pressure reducing device 61 while supplying gas by the supply device 3f for a certain period of time, thereby promoting the exhaust of the volatile components. During heating by the heating unit 4, the pressure may be reduced without circulating the gas, and after heating by the heating unit 4 is stopped upon completion of volatilization of the volatile components, a reactive gas or an inert gas may be introduced to, for example, a surface treatment pressure, and the gas may be circulated and / or exhausted by the air blower 62 for a certain period of time for cooling. When a reactive gas is introduced, the chamber may be immediately switched to plasma surface treatment after cooling by circulation and / or exhaust for a certain period of time, thereby improving throughput. When an inert gas is introduced, after cooling by circulation and / or evacuation for a certain period of time, a reactive gas is introduced to proceed to the surface treatment.

[0178] In this case, a temperature detector 8 may be provided to measure the temperature of the component supply body TW (see FIG. 14), and the circulation and / or exhaust may be stopped when the temperature measured by the temperature detector 8 reaches a preset temperature after heating by the heating unit 4 has stopped. Note that exhausting the gas has a greater cooling effect than circulating the gas.

[0179] (14) When volatilizing and removing volatile components, pressure reduction is not required. Volatilization of volatile components may be promoted by heating and exhaust alone. That is, in the chamber 1, the component supply TW may be heated by the heating unit 4 to promote volatilization from the component supply TW, and the volatilized volatile components may be exhausted and removed by the exhaust unit 3. In this case, heating may be stopped when the amount of a specific component detected by the component detector 7 reaches a predetermined set amount. For example, the control device 200 may determine that volatilization of volatile components from the component supply TW is complete when the amount of a specific component detected by the component detector 7 reaches a predetermined set amount. Furthermore, the exhaust unit 3 may have a circulation path connecting the blower 3e, the trap 3g, the supply device 3f, the air inlet 1f, and the exhaust port 1a. This allows the gas in the chamber 1 to be heated and circulated, thereby accelerating the removal of volatile components from the component supply TW.

[0180] In this embodiment, after heating by the heating unit 4 is stopped, gas may be supplied by the supply device 3f for a certain period of time while the blower 3e circulates the gas and / or the pressure reducing device 3a exhausts the gas, thereby ventilating and cooling the chamber 1 and promoting the removal of volatile components. In this case, too, the endpoint is a certain period of time from when the amount of a specific component detected by the component detector 7 reaches a predetermined set value. This allows for further removal of volatile components in the chamber 1 during surface treatment, ensuring sufficient surface treatment. In this case, because the temperature of the component supply body TW is low during surface treatment, even if volatile components remain, they are prevented from volatilizing due to heating during surface treatment.

[0181] (15) In a mode in which heating is performed by the heating unit 4, even when the end point is reached, the cessation of heating may be delayed by a preset time to ensure further volatilization time. This can further reduce the volatile components in the chamber 1, more reliably suppress reattachment of the volatile components, and make insufficient surface treatment less likely. Instead of delaying the cessation of heating from the end point, a certain tolerance may be added to the end point. For example, the end point may be set by adding a certain margin to the detected values ​​of pressure and component amount to more reliably complete volatilization.

[0182] (16) In the above-described embodiment, the mounting system 100 includes one bonding apparatus 180, but this is not limiting. As shown in FIG. 15 , the mounting system 100 may include a plurality of bonding apparatuses 180 in the mounting unit Y. The number of bonding apparatuses 180 in the mounting unit Y can be determined according to the takt time determined from the component supplier TW, the size of the mounting board BW, the required processing time, etc., and increasing the number of bonding apparatuses 180 can improve efficiency.

[0183] In this way, when multiple bonding devices 180 are provided in the mounting section Y, as shown in Figure 15, a base 11m can be provided in the mounting section Y, and the multiple bonding devices 180 can be arranged so as to be connected to the periphery of the base 11m. Although Figure 15 shows two bonding devices 180, the number of bonding devices 180 connected is not limited and may be one, three, or more. Furthermore, a transport device 190α may be provided inside the base 11m, separate from the transport device 190, for distributing, supplying, and collecting component suppliers TW and mounting boards BW to each bonding device 180. Multiple transport devices 190α may be provided as necessary.

[0184] Furthermore, a buffer device 11n capable of storing the component supplier TW and the mounting board BW may be provided inside the base body 11m.

[0185] The buffer apparatus 11n may store pre-processed component supply items TW and mounting boards BW without storing them in the supply item buffer apparatus 160 and mounting board buffer apparatus 170 of the mounting pre-processing section X. Also, the buffer apparatus 11n may store component supply items TW and mounting boards BW that have been subjected to the mounting process.

[0186] 15, a dedicated transport device 190β may be provided at the load port 11c. Alternatively, a supply buffer device 160 and a mounting substrate buffer device 170 may be provided on the load port 11c side of the base 11a, and the component supply items TW and mounting substrates BW transported by the transport device 190β may be stored in these supply buffer devices 160 and mounting substrate buffer devices 170. The component supply items TW and mounting substrates BW stored in these supply buffer devices 160 and mounting substrate buffer devices 170 may be transported to each chamber 11b by the transport device 190.

[0187] The buffer device 11n may be a storehouse capable of storing a plurality of component suppliers TW and mounting boards BW. The storehouses may be stacked at intervals to store the component suppliers TW and mounting boards BW.

[0188] The buffer device 11n may store pre-processed component supplies TW and mounting boards BW that are about to undergo mounting, or may store component supplies TW and mounting boards BW that have already undergone mounting processing.

[0189] Furthermore, a plurality of buffer devices 11n may be provided within the base body 11m.

[0190] The buffer apparatus 11n may be a mounting table capable of holding only one component supplier TW or one mounting board BW. In this case, the component supplier TW or one mounting board BW waiting to be mounted is stored in the supplier buffer apparatus 160 or one mounting board buffer apparatus 170, as in the above-described embodiment. The buffer apparatus 11n may also be a storehouse capable of storing a plurality of component suppliers TW or one mounting board BW. In this case, the component suppliers TW or one mounting board BW may be stored in a stacked manner, similar to the supplier buffer apparatus 160 or one mounting board buffer apparatus 170.

[0191] Furthermore, one transport device 190 may distribute the component suppliers TW and the mounting boards BW to each of the multiple bonding devices 180. In this case, the transport device 190 may be provided inside the base body formed by combining the base body 11a and the base body 11m.

[0192] (17) As described above, the mounting unit Y may be provided with the base 11m, and the mounting unit Y and the pre-mounting processing unit X may be separable and separate entities. That is, the mounting system 100 may be configured so that the mounting unit Y and the pre-mounting processing unit X are independent of each other. The pre-mounting processing unit X may be configured to include the removal device 101. The removal device 101 may also be configured independent of the pre-mounting processing unit X. In this case, the component supply unit TW and the mounting board BW supplied from the previous process may be transported to the removal device 101 to remove volatile components, and the component supply unit TW and the mounting board BW from which the volatile components have been removed may be supplied to the load port 11c. In this case, the control device 200 may control both the pre-mounting processing unit X and the mounting unit Y provided separately from it, or separate control devices may be provided for each.

[0193] (18) In the various modified examples described above, it is possible to realize narrow spacing between connection terminals that was previously impossible due to contact between mounting components made of bumps of solder, gold, copper, aluminum, etc. on the connection terminals, thereby making it possible to create a high-density package.

[0194] [Other Embodiments] While the embodiments of the present invention and modifications of each part have been described above, these embodiments and modifications of each part are presented as examples and are not intended to limit the scope of the invention. These novel embodiments described above can be embodied in various other forms, and various omissions, substitutions, modifications, and combinations can be made without departing from the spirit of the invention. These embodiments and modifications thereof are included within the scope and spirit of the invention, and are also included in the invention described in the claims.

[0195] REFERENCE SIGNS LIST 1 chamber 1a exhaust port 1b purge hole 1c detection port 1d loading / unloading port 1e shutter 1f air supply port 1g window 2 support portion 2a plate-shaped member 2b protrusion 2c hole 3 exhaust portion 3a pressure reducing device 3b, 3b1, 3b2 piping 3c, 3c1 to 3c2 valve 3d exhaust line 3e blower 3f supply device 3g trap 4 heating portion 4a lamp 5 purge portion 5a piping 5b valve 6 pressure detector 7 component detector 8 temperature detector 9 irradiation device 11a, 11m substrate 11b chamber 11c load port 11d window member 11e hole 11f stopper 11n buffer device 10 chamber 20 stage 21 drive portion 21a, 21b Rod 21c Driving mechanism 30 Gas inlet 31 Supply device 31a Piping 40 Plasma generator 41 Antenna 42 Power supply 43 Matching box 50 Mask 50a Support shaft 51 Driving unit 51a Rod 51b Driving mechanism 60 Exhaust port 61 Pressure reducing device 61a Piping 100 Mounting system 101 Removal device 102 Plasma processing device 110 Supply body cleaning device 111 Cleaning chamber 111a Opening 111b Shutter 112 Support unit 113 Rotation mechanism 114 Cup 115 Supply unit 115a Nozzle 115b Moving mechanism 120 Mounting substrate cleaning device 130 Adjustment processing device 131 Irradiation device 140 Gauging device 150 Alignment device 160 Supply buffer device 161 Storage 170 Mounting substrate buffer device 171 Storage 180 Bonding device 190, 190α, 190β Transport device 191 Transport robot 191a Robot hand 192 Movement mechanism 200 Control device 300 Pre-mounting processing device TW Component supply BW Mounting substrate X Pre-mounting processing unit Y Mounting unit

Claims

1. A pre-mounting treatment device that performs pre-mounting treatment of the bonding surfaces of electronic components and the mounting substrate before mounting the electronic components on the mounting substrate, comprising: a plasma treatment device that performs surface treatment of the bonding surfaces of the electronic components and / or the mounting substrate with plasma; a cleaning device that cleans the electronic components and / or the mounting substrate before and / or after the plasma treatment in the plasma treatment device; and a removal device that promotes volatilization of volatile components and removes the volatile components from a component supply body in which a sheet T having an adhesive portion on its surface is supported by a ring R and on which electronic components E are adhered, before the plasma treatment in the plasma treatment device.

2. The pre-mounting processing device according to claim 1, characterized in that the removal device has a chamber that stores the component supply body and an exhaust section that evacuates the chamber to reduce the pressure, and in that the component supply body is exposed to a reduced pressure atmosphere reduced by the exhaust section within the chamber, thereby promoting evaporation from the component supply body, and the evaporated volatile components are exhausted and removed by the exhaust section.

3. A pre-mounting processing device according to claim 2, characterized in that it has a pressure detector that detects the pressure inside the chamber, and the exhaust unit stops exhausting when the pressure detected by the pressure detector reaches a preset set pressure or a preset pressure change amount.

4. A pre-mounting processing device according to claim 2, characterized in that it has a pressure detector that detects the pressure inside the chamber, and the exhaust unit stops exhausting when the rate of pressure decrease from the start of exhausting detected by the pressure detector decreases from immediately after exhausting starts and then increases.

5. A pre-mounting processing device as described in claim 2, characterized in that it has a component detector that detects the amount of a specific component in the gas within the chamber, and the exhaust unit stops exhausting when the amount of the specific component detected by the component detector or the amount of change in the amount of the specific component becomes a preset amount or becomes equal to or less than the preset amount.

6. The pre-mounting processing device according to claim 1, characterized in that the removal device has a chamber that stores the component supply body, an exhaust section that evacuates the chamber, and a heating section that heats the component supply body, and by heating the component supply body within the chamber using the heating section, volatilization from the component supply body is promoted, and the volatilized volatile components are discharged and removed by the exhaust section.

7. The pre-mounting processing device according to claim 6, characterized in that the removal device has a component detector that detects the amount of a specific component in the gas within the chamber, and the heating unit stops heating when the amount of the specific component detected by the component detector or the amount of change in the amount of the specific component becomes a preset amount or becomes equal to or less than the preset amount.

8. The pre-mounting processing device according to claim 1, characterized in that the removal device has a chamber that stores the component supply body, an exhaust section that evacuates the chamber to reduce the pressure, and a heating section that heats the component supply body within the chamber, wherein the component supply body is heated by the heating section in a reduced pressure atmosphere reduced by the exhaust section within the chamber, thereby promoting evaporation from the component supply body, and the evaporated volatile components are exhausted and removed by the exhaust section.

9. A mounting pre-processing device as claimed in claim 8, characterized in that it has a pressure detector that detects the pressure inside the chamber, and the heating unit stops heating when the pressure detected by the pressure detector reaches a preset set pressure or a preset pressure change amount.

10. A pre-mounting processing device as described in claim 8, further comprising a pressure detector for detecting the pressure inside the chamber, wherein the heating unit stops heating when the rate of pressure decrease from the start of exhaust as detected by the pressure detector decreases from immediately after exhaust starts and then increases.

11. A pre-mounting processing device as described in claim 8, characterized in that it has a component detector that detects the amount of a specific component in the gas within the chamber, and the heating unit stops exhausting and / or heating when the amount of the specific component detected by the component detector or the amount of change in the amount of the specific component becomes a preset amount or becomes equal to or less than the preset amount.

12. A pre-mounting processing device as described in claim 8, characterized in that it has a pressure detector that detects the pressure inside the chamber and a temperature detector that measures the temperature of the component supply body, the heating unit stops heating based on the pressure detected by the pressure detector, and the exhaust unit stops exhausting when the temperature measured by the temperature detector reaches a set temperature after heating by the heating unit has stopped.

13. The pre-mounting processing device according to claim 6, characterized in that the chamber has an air inlet for supplying gas into the chamber, and an outlet for exhausting the gas in the chamber and discharging volatile components that have evaporated from the component supply body, and the exhaust section has a circulation path connecting the air inlet and the outlet, a blower for circulating the gas supplied into the chamber, and a trap for capturing volatile components that have evaporated from the component supply body.

14. The pre-mounting processing device according to claim 8, characterized in that the chamber has an air inlet for supplying gas into the chamber, and an outlet for exhausting the gas in the chamber and discharging volatile components that have evaporated from the component supply body, and the exhaust section has a circulation path connecting the air inlet and the outlet, a blower for circulating the gas supplied into the chamber, and a trap for capturing volatile components that have evaporated from the component supply body.

15. A mounting system comprising: a pre-mounting processing device according to any one of claims 1 to 14; and a bonding device that detaches the electronic components processed by the pre-mounting processing device from the component supply body and mounts them on the mounting board.

16. A pre-mounting treatment method for performing pre-mounting treatment of the bonding surfaces of an electronic component and a mounting substrate before mounting the electronic component on the mounting substrate, the pre-mounting treatment method comprising: a surface treatment using plasma of the bonding surfaces of the electronic component and / or the mounting substrate; a cleaning treatment for cleaning the electronic component and / or the mounting substrate before and / or after the surface treatment; and a component supply body having a sheet T with an adhesive portion on its surface supported by a ring R, and having electronic components E adhered to the sheet T, whereby the volatilization of volatile components is promoted and removed before the surface treatment.

17. A pre-mounting processing method as described in claim 16, characterized in that the component supply body is stored in a chamber, the chamber is evacuated to reduce the pressure, the component supply body is exposed to a reduced pressure atmosphere in the chamber to promote evaporation from the component supply body, and the evaporated volatile components are exhausted and removed from the chamber.

18. A pre-mounting processing method as described in claim 16, characterized in that the component supply body is stored in a chamber and heated, the component supply body is heated in the chamber to promote volatilization from the component supply body, and the volatilized volatile components are exhausted and removed from the chamber.

19. A pre-mounting processing method as described in claim 16, characterized in that the component supply body is stored in a chamber, the chamber is evacuated to reduce the pressure, and heated, and the component supply body is heated in the chamber in a reduced pressure atmosphere to promote volatilization from the component supply body, and the volatilized volatile components are exhausted and removed from the chamber.

Images