Perovskite photovoltaic module, electrical device, photovoltaic system and power generation device

By setting channels on the side of the encapsulation layer to adjust the moisture penetration distance, the problem of damage to the perovskite layer caused by moisture penetration is solved, and the efficiency and stability of photovoltaic modules are improved.

WO2025209411A1PCT designated stage Publication Date: 2025-10-09CONTEMPORARY AMPEREX TECHNOLOGY CO LTD
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Patent Information

Application Number
PCT/CN2025/086283
Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
Priority Date
2024-04-02
Filing Date
2025-03-31
Publication Date
2025-10-09

AI Technical Summary

Technical Problem

In perovskite photovoltaic modules, water penetration causes damage to the perovskite layer, reducing the photoelectric conversion efficiency. In traditional structures, the thickness of the cover plate limits the water penetration distance, which is difficult to increase.

Method used

A channel is provided on the packaging layer, and the opening of the channel is located on the side of the packaging layer. The moisture penetration distance is adjusted by the covering length of the packaging layer on the busbar, thereby reducing the risk of moisture penetration without increasing the thickness of the packaging layer and the cover plate.

Benefits of technology

The photoelectric conversion efficiency and stability of perovskite photovoltaic modules are improved, the appropriate module thickness is maintained, and the risk of moisture infiltration is reduced.

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Abstract

Provided in the present application are a perovskite photovoltaic module, an electrical device, a photovoltaic system and a power generation device. The perovskite photovoltaic module comprises a perovskite battery, flow convergence members, an encapsulation layer and a cover plate, which are stacked in sequence, wherein the perovskite battery comprises a perovskite layer and a first electrode layer, which are stacked; the encapsulation layer is at least laid on an outer edge of the perovskite battery, the encapsulation layer is provided with hole channels, and openings of the hole channels are located in a side face of the encapsulation layer; and the flow convergence members are connected to the first electrode layer and pass through the hole channels in the side face of the encapsulation layer. In the perovskite photovoltaic module, by means of the provision of the hole channels in the encapsulation layer and making the openings of the hole channels located in the side face of the encapsulation layer, the permeation distance of moisture can be adjusted by means of the covering length of the encapsulation layer on the flow convergence members to reduce the risk of moisture penetration, thereby reducing the risk of the perovskite layer being damaged, and facilitating an improvement in the stability of the power conversion efficiency of the perovskite photovoltaic module.
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Description

Perovskite photovoltaic modules, electrical devices, photovoltaic systems, and power generation devices

[0001] Related applications

[0002] This application claims priority to Chinese patent application No. 2024206746382, filed on April 2, 2024, entitled “PEROVSKITE PHOTOVOLTAIC MODULES, ELECTRICAL DEVICES, PHOTOVOLTAIC SYSTEMS AND POWER GENERATION DEVICES,” the entire text of which is hereby incorporated by reference. Technical Field

[0003] The present application relates to the field of photovoltaic technology, and in particular to a perovskite photovoltaic module, an electrical device, a photovoltaic system, and a power generation device. Background Art

[0004] In perovskite photovoltaic modules, moisture infiltration can damage the perovskite layer, reducing the module's photoelectric conversion efficiency. Traditional perovskite photovoltaic modules often feature holes in the cover plate to allow the current collector to exit. This structure, limited by the typically thin cover glass, limits the distance moisture can penetrate. Moisture can easily penetrate through the holes in the cover plate, increasing the risk of damage to the perovskite layer and, in turn, reducing the module's photoelectric conversion efficiency. Summary of the Invention

[0005] The present application provides a perovskite photovoltaic module, comprising a perovskite cell, a busbar, an encapsulation layer and a cover plate stacked in sequence; the perovskite cell comprises a stacked perovskite layer and a first electrode layer, the encapsulation layer is laid at least on the outer edge of the perovskite cell, the encapsulation layer is provided with a channel, and the opening of the channel is located on the side of the encapsulation layer; the busbar is connected to the first electrode layer and passes through the channel on the side of the encapsulation layer.

[0006] In the above-mentioned perovskite photovoltaic module, by providing a channel in the encapsulation layer and locating the opening of the channel on the side of the encapsulation layer, the water penetration distance can be adjusted by the length of the encapsulation layer covering the busbar, reducing the risk of water infiltration and, in turn, the risk of damage to the perovskite layer, which is beneficial for improving the stability of the photoelectric conversion efficiency of the perovskite photovoltaic module. At the same time, in the above-mentioned perovskite photovoltaic module, when adjusting the water penetration distance, there is no need to increase the thickness of the encapsulation layer and the cover plate, which is beneficial for maintaining a relatively suitable thickness of the perovskite photovoltaic module.

[0007] In some embodiments, the encapsulation layer entirely covers the busbar at the opening of the channel. The encapsulation layer entirely covers the busbar at the opening of the channel, which can further improve the encapsulation effect and the water-blocking effect of the perovskite photovoltaic module. In addition, compared with the interface formed between the busbar and the cover plate, the interface formed between the busbar and the encapsulation layer is more unfavorable for water infiltration. Therefore, the encapsulation layer entirely covers the busbar at the channel, which can further reduce the risk of water infiltration and is beneficial to improving the photoelectric conversion efficiency of the perovskite photovoltaic module.

[0008] In some embodiments, the encapsulation layer includes a central sub-layer and an edge sub-layer. The central sub-layer is laid on the side of the first electrode layer away from the perovskite layer. The edge sub-layer is laid around the periphery of the perovskite cell, and the opening of the pore is located on the side of the edge sub-layer. The encapsulation layer includes the central sub-layer and the edge sub-layer. The central sub-layer and the edge sub-layer work together to improve the encapsulation effect of the perovskite cell and enhance its stability.

[0009] In some embodiments, the thickness of the edge sub-glue layer is 0.4 mm (abbreviated as: mm) to 1 mm. The thickness of the edge sub-glue layer within this range can achieve a good packaging effect and make the perovskite photovoltaic module have a more appropriate thickness.

[0010] In some embodiments, there are multiple current collectors, and the edge sub-adhesive layer is provided with multiple channels for the multiple current collectors to pass through. The edge sub-adhesive layer is provided with multiple channels for the multiple current collectors to pass through, which facilitates the use of multiple series or parallel connections of internal sub-cells to collect the current of the internal cells and lead it out of the photovoltaic module.

[0011] In some embodiments, the openings of the plurality of channels are located on the same side of the edge glue layer. The openings of the plurality of channels are located on the same side of the edge glue layer, which facilitates the subsequent installation of the busbar.

[0012] In some embodiments, the middle sub-rubber layer includes at least one of a polyolefin elastomer rubber layer, an ethylene-vinyl acetate copolymer rubber layer, a thermoplastic polyurethane elastomer rubber layer, a polyvinyl butyral rubber layer, and an organic silicone rubber layer.

[0013] In some embodiments, the edge sub-glue layer includes at least one of a desiccant-filled butyl glue layer, a desiccant-filled polyisobutylene glue layer, and a desiccant-filled polyisoprene glue layer.

[0014] In some embodiments, the perovskite photovoltaic module further includes an insulating layer positioned between the busbar and the first electrode layer. The insulating layer insulates the locations where the busbar and the first electrode layer do not contact each other, thereby reducing the risk of short circuits within the perovskite photovoltaic module.

[0015] In some embodiments, the thickness of the insulating layer is 10 micrometers (μm) to 50 μm. Within this thickness range, the insulating layer can maintain a relatively suitable thickness for the perovskite photovoltaic module while exhibiting good insulation performance.

[0016] In some embodiments, the insulating layer includes at least one of a polyimide insulating layer and a polyethylene terephthalate insulating layer.

[0017] In some embodiments, the insulating layer has at least one adhesive surface, and the at least one adhesive surface faces the first electrode layer. The adhesive surface can more conveniently connect and composite the insulating layer and the first electrode layer.

[0018] In some embodiments, the perovskite photovoltaic module further includes a substrate, which is located on a side of the perovskite cell away from the cover plate.

[0019] In some embodiments, the perovskite cell further includes a second electrode layer; the second electrode layer is located on a side of the perovskite layer away from the first electrode layer.

[0020] An electrical device comprises the above-mentioned perovskite photovoltaic module.

[0021] A photovoltaic system includes the above-mentioned perovskite photovoltaic module.

[0022] A power generation device comprises the above-mentioned perovskite photovoltaic module. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] To more clearly illustrate the technical solution of this application, the following is a brief introduction to the drawings used in this application. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on the drawings without inventive effort.

[0024] FIG1 is a schematic structural diagram of a perovskite photovoltaic module in one embodiment of the present application.

[0025] FIG2 is a schematic structural diagram of the perovskite photovoltaic module corresponding to FIG1 from another perspective.

[0026] FIG3 is a schematic diagram of the installation of the original film of the sub-glue layer at the edge of the perovskite photovoltaic module in one embodiment of the present application.

[0027] FIG4 is a schematic diagram of the installation of the original film of the sub-glue layer at the edge of a perovskite photovoltaic module in another embodiment of the present application.

[0028] FIG5 is a surface morphology diagram of the perovskite photovoltaic modules in Comparative Example 1 and Example 1 of the present application after wet heat testing.

[0029] Explanation of the marks in the figure: 10, perovskite photovoltaic module; 100, perovskite cell; 201, busbar; 202, edge sub-glue layer; 203, cover plate; 204, insulation layer; 205, substrate; 300, original film of edge sub-glue layer.

[0030] In order to better describe and illustrate the embodiments and / or examples of the present application disclosed herein, reference may be made to one or more of the accompanying drawings. The additional details or examples used to describe the accompanying drawings should not be considered to limit the scope of the present application, the presently described embodiments and / or examples, and any of the best modes currently understood to be present in these applications. DETAILED DESCRIPTION

[0031] Below, some embodiments of the present application are described in detail with appropriate reference to the accompanying drawings. However, unnecessary detailed descriptions may be omitted. For example, detailed descriptions of well-known matters and repeated descriptions of substantially identical structures may be omitted. This is to avoid making the following description unnecessarily lengthy and to facilitate understanding by those skilled in the art. In addition, the accompanying drawings and the following description are provided to enable those skilled in the art to fully understand the present application and are not intended to limit the subject matter described in the claims.

[0032] The details of one or more embodiments of the present application are set forth in the accompanying drawings and the description below. Other features, objects, and advantages of the present application will become apparent from the description, drawings, and claims.

[0033] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application pertains. The terms used herein in the specification of this application are for the purpose of describing specific embodiments only and are not intended to limit this application.

[0034] The "ranges" disclosed herein are defined in terms of lower and upper limits, where a given range is defined by selecting a lower limit and an upper limit, and the selected lower and upper limits define the boundaries of the particular range. Ranges defined in this manner can be inclusive or exclusive of the end values ​​and can be combined arbitrarily, i.e., any lower limit can be combined with any upper limit to form a range. For example, if ranges of 60 to 120 and 80 to 110 are listed for a particular parameter, it is understood that ranges of 60 to 110 and 80 to 120 are also contemplated. Furthermore, if minimum range values ​​of 1 and 2 are listed, and if maximum range values ​​of 3, 4, and 5 are listed, the following ranges are all contemplated: 1 to 3, 1 to 4, 1 to 5, 2 to 3, 2 to 4, and 2 to 5. In this application, unless otherwise indicated, the numerical range "a to b" is a shorthand representation of any combination of real numbers between a and b, where a and b are both real numbers. For example, a numerical range of "0-5" indicates that all real numbers between "0-5" are listed herein, and "0-5" is simply an abbreviation for these numerical combinations. Furthermore, when a parameter is expressed as an integer ≥ 2, this is equivalent to disclosing that the parameter is, for example, an integer of 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, etc.

[0035] Unless otherwise specified, all embodiments and optional embodiments of the present application can be combined with each other to form a new technical solution.

[0036] Unless otherwise specified, all technical features and optional technical features of this application can be combined with each other to form a new technical solution.

[0037] Unless otherwise specified, all steps of the present application may be performed sequentially or randomly, and in some embodiments are performed sequentially. For example, the method includes steps (a) and (b), which means that the method may include steps (a) and (b) performed sequentially, or may include steps (b) and (a) performed sequentially. For example, the method may further include step (c), which means that step (c) may be added to the method in any order, for example, the method may include steps (a), (b) and (c), or may include steps (a), (c) and (b), or may include steps (c), (a) and (b), etc.

[0038] Unless otherwise specified, the term "or" is used in this application to be inclusive. For example, the phrase "M or N" means "M, N, or both M and N." More specifically, the condition "M or N" is satisfied by any of the following conditions: M is true or present, and N is false or absent; M is false or absent, and M is true or present; or both M and N are true, or both M and N are present.

[0039] If not otherwise specified, in this application, the term "room temperature" generally refers to 4 degrees Celsius (abbreviated as: °C) to 30°C, preferably 25±5°C.

[0040] Unless otherwise indicated, the terms used in this application have the commonly understood meanings generally understood by those skilled in the art. Unless otherwise indicated, the numerical values ​​of the various parameters mentioned in this application can be measured using various measurement methods commonly used in the art. For example, the tests can be performed using the methods described in the examples of this application.

[0041] Referring to Figures 1 and 2, an embodiment of the present application provides a perovskite photovoltaic module 10. The perovskite photovoltaic module 10 includes a perovskite cell 100, a busbar 201, an encapsulation layer, and a cover plate 203 that are stacked in sequence. The perovskite cell 100 includes a perovskite layer and a first electrode layer that are stacked. The encapsulation layer is at least laid on the outer edge of the perovskite cell 100, and the encapsulation layer is provided with a channel, the opening of the channel is located on the side of the encapsulation layer. The busbar 201 is connected to the first electrode layer and passes through the channel on the side of the encapsulation layer. In the perovskite photovoltaic module 10 of this embodiment, by providing a channel on the encapsulation layer and making the opening of the channel located on the side of the encapsulation layer, the water penetration distance can be adjusted by the length of the encapsulation layer covering the busbar 201, thereby reducing the risk of water infiltration and further reducing the risk of damage to the perovskite layer, which is beneficial to improving the stability of the photoelectric conversion efficiency of the perovskite photovoltaic module 10. At the same time, in the above-mentioned perovskite photovoltaic module 10, when adjusting the water penetration distance, there is no need to increase the thickness of the encapsulation layer and the cover plate 203, which is conducive to maintaining a relatively appropriate thickness of the perovskite photovoltaic module 10.

[0042] It can be understood that in the perovskite photovoltaic module 10 shown in FIG. 1 and FIG. 2 , the openings of the channels on the encapsulation layer are filled with the busbars 201 .

[0043] It is also understandable that the busbar 201 may be a busbar. Alternatively, the busbar 201 may be a copper tape, a tinned copper tape, a copper-plated conductive tape, a tinned conductive tape, or the like.

[0044] It can also be understood that the bus 201 is connected to the first electrode layer to lead out the carriers, and the bus 201 and the first electrode layer can be connected using a conventional connection method, which will not be repeated here. The connection point between the bus 201 and the first electrode layer is not shown in the figure.

[0045] In some embodiments, the cover plate 203 is not provided with a hole for the busbar 201 to pass through. This can reduce the risk of moisture entering the perovskite photovoltaic module 10 through the hole on the cover plate 203, further improving the water-blocking effect of the perovskite photovoltaic module 10.

[0046] In some embodiments, the encapsulation layer entirely encapsulates the busbar 201 at the opening of the duct of the encapsulation layer. Encapsulating the busbar 201 entirely at the opening of the duct can further improve the encapsulation effect and improve the water-blocking effect of the perovskite photovoltaic module 10. In addition, compared with the interface formed between the busbar 201 and the cover plate 203, the interface formed between the busbar 201 and the encapsulation layer is more unfavorable for water infiltration. Therefore, encapsulating the busbar 201 entirely at the duct can further reduce the risk of water infiltration, which is beneficial to improving the photoelectric conversion efficiency of the perovskite photovoltaic module 10.

[0047] In some embodiments, the encapsulation layer includes a middle sub-glue layer and an edge sub-glue layer 202. The middle sub-glue layer is laid on the side of the first electrode layer away from the perovskite layer. The edge sub-glue layer 202 is laid around the perovskite cell 100, and the opening of the pore is located on the side of the edge sub-glue layer 202. It is understood that the middle sub-glue layer is not shown in the figure. The encapsulation layer includes the middle sub-glue layer and the edge sub-glue layer 202. The combined effect of the middle sub-glue layer and the edge sub-glue layer 202 can improve the encapsulation effect of the perovskite cell 100 and improve its stability.

[0048] In some embodiments, the thickness of the edge sub-glue layer 202 is 0.4 mm to 1 mm. Within this range, the thickness of the edge sub-glue layer 202 can provide a relatively suitable thickness for the perovskite photovoltaic module 10 while achieving a good encapsulation effect. Alternatively, the thickness of the edge sub-glue layer 202 can be 0.4 mm, 0.5 mm, 0.6 mm, 0.7 mm, 0.8 mm, 0.9 mm, 1 mm, or any value within a range consisting of any two of the aforementioned values. Furthermore, optionally, the thickness of the edge sub-glue layer 202 is 0.6 mm to 0.8 mm.

[0049] In some embodiments, there are multiple busbars 201, and the edge sub-glue layer 202 is provided with multiple channels, and the multiple channels are used for the multiple busbars 201 to pass through respectively. The edge sub-glue layer 202 is provided with multiple channels for the multiple busbars 201 to pass through respectively, which helps to adopt multiple series or parallel methods for the internal sub-batteries to collect the current of the internal batteries and lead them out of the photovoltaic module. It can be understood that the multiple busbars 201 correspond to the multiple channels one by one. For example, there are two busbars 201, and the two busbars 201 are respectively connected to the positive and negative poles of the first electrode layer 105. The two busbars 201 pass through different channels to collect the current of the internal batteries and lead them out of the photovoltaic module.

[0050] In some embodiments, the openings of the multiple channels are located on the same side of the edge glue layer 202, which facilitates the subsequent installation of the busbar 201. For example, it is convenient to install multiple busbars 201 into a junction box.

[0051] In some embodiments, the middle sub-rubber layer includes at least one of a polyolefin elastomer (abbreviated as: TPO) rubber layer, an ethylene-octene copolymer (abbreviated as: POE) rubber layer, an ethylene-vinyl acetate copolymer (abbreviated as: EVA) rubber layer, a thermoplastic polyurethane elastomer (abbreviated as: TPU) rubber layer, a polyvinyl butyral (abbreviated as: PVB) rubber layer and an organic silicone rubber layer.

[0052] It can be understood that the middle sub-rubber layer includes multiple layers of polyolefin elastomer rubber layer, ethylene-octene copolymer rubber layer, ethylene-vinyl acetate copolymer rubber layer, thermoplastic polyurethane elastomer rubber layer, polyvinyl butyral rubber layer and organic silicone rubber layer, which means that the middle sub-rubber layer includes a composite layer formed by multiple layers of polyolefin elastomer rubber layer, ethylene-octene copolymer rubber layer, ethylene-vinyl acetate copolymer rubber layer, thermoplastic polyurethane elastomer rubber layer, polyvinyl butyral rubber layer and organic silicone rubber layer.

[0053] In some embodiments, the material of the middle sub-layer includes at least one of polyolefin elastomer, ethylene-octene copolymer, ethylene-vinyl acetate copolymer, thermoplastic polyurethane elastomer, polyvinyl butyral, and organic silicone.

[0054] In some embodiments, the edge sub-adhesive layer 202 includes at least one of a desiccant-filled butyl rubber layer, a desiccant-filled polyisobutylene rubber layer, and a desiccant-filled polyisoprene rubber layer. It is understood that when the edge sub-adhesive layer 202 includes multiple of the desiccant-filled butyl rubber layer, the desiccant-filled polyisobutylene rubber layer, and the desiccant-filled polyisoprene rubber layer, it means that the edge sub-adhesive layer 202 includes a composite layer formed by multiple of the desiccant-filled butyl rubber layer, the desiccant-filled polyisobutylene rubber layer, and the desiccant-filled polyisoprene rubber layer.

[0055] In some embodiments, the material of the edge sub-glue layer includes at least one of desiccant-filled butyl rubber, desiccant-filled polyisobutylene, and desiccant-filled polyisoprene.

[0056] It is understandable that when forming the edge sub-glue layer 202, a thicker edge sub-glue layer original film 300 can be placed at the edge where the busbar 201 does not need to be led out. For example, the thickness of the thicker edge sub-glue layer original film 300 is H. Two smaller edge sub-glue layer original films 300 are placed on the side where the busbar 201 needs to be led out. For example, the thickness of the smaller edge sub-glue layer original films 300 is 0.5H respectively, so that the busbar is located between the two edge sub-glue layer original films 300. Then, during the lamination process of the perovskite photovoltaic module 10 preparation process, the edge sub-glue layer original film 300 is softened and cast to form the edge sub-glue layer 202, and a channel is formed at the position where the busbar 201 needs to be led out, which is manifested as a channel on the side of the edge sub-glue layer 202 through which the busbar 201 passes, as shown in FIG. 3 . Alternatively, when forming the edge sub-adhesive layer 202, a certain thickness of the edge sub-adhesive layer original film 300 is placed around the perovskite cell 100, and two holes are opened on the edge sub-adhesive layer original film 300 on the side where the busbar 201 needs to be led out for leading out the busbar 201, as shown in Figure 4. Alternatively, the edge sub-adhesive layer original film 300 is first compounded on the surface of the busbar 201, so that the busbar 201 after being compounded with the edge sub-adhesive layer original film 300 extends out from the edge sub-adhesive layer original film 300, and then during the lamination process of the perovskite photovoltaic module 10 preparation process, the edge sub-adhesive layer original film 300 is softened and cast to form the edge sub-adhesive layer 202, and holes are formed at the position where the busbar 201 needs to be led out, which is manifested as a hole on the side of the edge sub-adhesive layer 202 for the busbar 201 to pass through. Furthermore, the edge sub-glue layer original film 300 and the busbar 201 may be combined so that the edge sub-glue layer original film 300 partially covers or fully covers the busbar 201 .

[0057] In some embodiments, the perovskite photovoltaic module 10 further includes an insulating layer 204, which is located between the busbar 201 and the first electrode layer. The insulating layer 204 insulates the locations where the busbar 201 does not contact the first electrode layer, reducing the risk of short circuits within the perovskite photovoltaic module 10. It is understood that the busbar 201 extends from the first electrode layer and is located on the surface of the insulating layer 204.

[0058] In some embodiments, the thickness of the insulating layer 204 is 10 μm to 50 μm. Within this thickness range, the insulating layer 204 can maintain a relatively suitable thickness for the perovskite photovoltaic module 10 while exhibiting good insulation performance. Optionally, the thickness of the insulating layer 204 can be 10 μm, 11 μm, 12 μm, 13 μm, 14 μm, 15 μm, 16 μm, 17 μm, 18 μm, 19 μm, 20 μm, 21 μm, 22 μm, 23 μm, 24 μm, 25 μm, 28 μm, 30 μm, 35 μm, 40 μm, 45 μm, 50 μm, or any value within a range consisting of any two of the above values.

[0059] In some embodiments, the insulating layer 204 includes at least one of a polyimide (PI) insulating layer and a polyethylene terephthalate (PET) insulating layer. Alternatively, the insulating layer 204 includes multiple layers of the polyimide insulating layer and the polyethylene terephthalate insulating layer, indicating that the insulating layer 204 includes a composite layer formed of multiple layers of the polyimide insulating layer and the polyethylene terephthalate insulating layer.

[0060] In some embodiments, the material of the insulating layer 204 includes at least one of polyimide and polyethylene terephthalate.

[0061] In some embodiments, the insulating layer 204 has at least one adhesive surface, with the at least one adhesive surface facing the first electrode layer. The adhesive surface facilitates the connection and bonding of the insulating layer 204 and the first electrode layer. Optionally, the insulating layer 204 comprises insulating tape. It is understood that when forming the insulating layer 204, the insulating tape can be attached to the surface of the first electrode layer to form the insulating layer 204.

[0062] In some embodiments, the first electrode layer includes at least one of a conductive metal layer, a conductive non-metal layer, or a conductive metal oxide layer. Optionally, the conductive metal is selected from at least one of Au, Ag, Cu, Al, Ni, Cr, Bi, Pt, Mg, Mo, W, and alloys thereof. The conductive non-metal is selected from C. The conductive metal oxide is selected from at least one of fluorine-doped tin oxide (abbreviated as: FTO), indium tin oxide (abbreviated as: ITO), aluminum-doped zinc oxide (abbreviated as: AZO), boron-doped zinc oxide (abbreviated as: BZO), indium zinc oxide (abbreviated as: IZO), and indium tungsten oxide (abbreviated as: IWO). Optionally, the thickness of the first electrode layer is 20 nanometers (abbreviated as: nm) to 200 nm, optionally, the thickness of the first electrode layer is 60 nm to 100 nm, and further optionally, the thickness of the first electrode layer is 70 nm to 90 nm.

[0063] In some embodiments, the perovskite cell 100 further includes a second electrode layer. The second electrode layer is located on the side of the perovskite layer away from the first electrode layer. Optionally, the second electrode layer is a transparent electrode layer. Optionally, the second electrode layer includes at least one of a fluorine-doped tin oxide (FTO) transparent electrode layer, an indium tin oxide (ITO) transparent electrode layer, an aluminum-doped zinc oxide (AZO) transparent electrode layer, a boron-doped zinc oxide (BZO) transparent electrode layer, an indium zinc oxide (IZO) transparent electrode layer, and an indium tungsten oxide (IWO) transparent electrode layer. Optionally, the thickness of the second electrode layer is 100 nm to 1000 nm, and further optionally, the thickness of the second electrode layer is 300 nm to 800 nm.

[0064] It is understandable that the perovskite photovoltaic module 10 further includes a substrate 205, which is located on the side of the perovskite cell away from the cover plate 203. It is understandable that a second electrode layer can be formed on the substrate 205. Optionally, the substrate 205 includes a glass substrate and a flexible substrate. The material of the flexible substrate can be exemplified by, but not limited to, organic polymer materials. Furthermore, the material of the flexible substrate can be a mixture of one or more of the following materials in different proportions: including but not limited to polyvinyl alcohol (abbreviated as: PVA), polyethylene terephthalate (abbreviated as: PET), polyimide (abbreviated as: PI), polyethylene naphthalate (abbreviated as: PEN), polydimethylsiloxane (abbreviated as: PDMS), etc.

[0065] In some embodiments, the perovskite cell 100 further includes a hole transport layer and an electron transport layer, each for transporting carriers generated by light excitation in the perovskite layer to the electrode layer. The hole transport layer is located between the second electrode layer and the perovskite layer, and the electron transport layer is located between the first electrode layer and the perovskite layer, thereby forming an inverse perovskite cell. Alternatively, the hole transport layer is located between the first electrode layer and the perovskite layer, and the electron transport layer is located between the second electrode layer and the perovskite layer, thereby forming a formal perovskite cell.

[0066] In some embodiments, the perovskite cell 100 further includes a metal fluoride layer. It is understood that the metal fluoride layer is not shown in the figure. The metal fluoride layer is located between the electron transport layer and the first electrode layer. Alternatively, the metal fluoride layer is located between the electron transport layer and the second electrode layer. The provision of the metal fluoride layer can facilitate electron extraction, thereby improving the photoelectric conversion efficiency of the perovskite photovoltaic module.

[0067] It is understood that other functional layers, such as a modification layer, can also be introduced into the perovskite cell 100 as needed. It is understood that the modification layer is not shown in the figure. Optionally, the perovskite cell 100 can be provided with a modification layer with an appropriate energy level, which can play one or more roles in reducing the energy level barrier, promoting energy level matching, improving carrier extraction efficiency, passivating interface defect states, protecting the light absorption layer, inhibiting water molecules and oxygen from oxidative decomposition of the cell, improving photoelectric conversion efficiency, and improving the stability of the perovskite cell. Depending on the location of the modification layer, the types of modification layers may include four types: a modification layer between the hole transport layer and the anode, a modification layer between the electron transport layer and the cathode, a modification layer between the hole transport layer and the perovskite layer, and a modification layer between the electron transport layer and the perovskite layer. Materials that can be used for the modification layer in the perovskite cell may include, but are not limited to: Cu2O, NiO, AZO, TiO2, etc.

[0068] It is understood that the perovskite layer comprises a material having a chemical formula of ABX3 or A2CDX6, wherein:

[0069] A is an inorganic or organic or organic-inorganic mixed cation, comprising at least one of an organic amine cation, a Cs cation, a K cation, a Rb cation and a Li cation; the organic amine cation is selected from (NR1R2R3R4) + 、(R1R2N=CR3R4) + 、(R1R2N-C(R5)=NR3R4) + or (R1R2N-C(NR5R6)=R3R4) + , wherein R1, R2, R3, R4, R5 and R6 are each independently selected from H, substituted or unsubstituted C1-20 alkyl or substituted or unsubstituted aryl; A is optionally methylamino (abbreviated as: CH3NH3 + or MA + ), carbamimidyl (abbreviated as: HC(NH2)2 + or FA + ), cesium ion (abbreviated as: Cs + ) and rubidium ions (abbreviated as: Rb + ) and further optionally is methylamino or guanidine.

[0070] B is an inorganic or organic or organic-inorganic mixed cation, including at least one of lead, tin, zinc, titanium, antimony, bismuth, nickel, iron, cobalt, silver, copper, gallium, germanium, magnesium, calcium, indium, aluminum, manganese, chromium, molybdenum and europium, and optionally a divalent metal ion Pb 2+ and Sn 2+ At least one of .

[0071] C is an inorganic, organic, or organic-inorganic mixed cation, optionally a monovalent metal ion Ag. + wait.

[0072] D is an inorganic or organic or organic-inorganic mixed cation, optionally a trivalent metal ion bismuth cation (Bi 3+ ), antimony cation (Sb 3+ ), indium cations (In 3+ )wait.

[0073] X is an inorganic or organic or organic-inorganic mixed anion, optionally one or more of a halogen anion and a halogen-like anion, and further optionally a bromide ion (Br - ) or iodide ion (I - ).

[0074] In some embodiments, the thickness of the perovskite layer is 100 nm to 1000 nm. As an example, the thickness of the perovskite layer can be, but is not limited to, 100 nm, 200 nm, 300 nm, 400 nm, 500 nm, 600 nm, 700 nm, 800 nm, 900 nm, 1000 nm, or a range between any two of the above values.

[0075] In some embodiments, the band gap of the perovskite layer is 1.2 electron volts (eV) to 2.3 eV. For example, the band gap of the perovskite layer is 1.2 eV, 1.3 eV, 1.4 eV, 1.5 eV, 1.6 eV, 1.7 eV, 1.8 eV, 1.9 eV, 2 eV, 2.1 eV, 2.2 eV, 2.3 eV, or a range between any two of the foregoing values. When the band gap of the perovskite layer is within the foregoing range, it can have a high visible light absorption efficiency.

[0076] In some embodiments, the material of the electron transport layer may include but is not limited to one or more of the following materials and their derivatives: imide compounds, quinone compounds, fullerenes and their derivatives, methoxytriphenylamine-fluoroformamidine (abbreviated as: OMeTPA-FA), calcium titanate (abbreviated as: CaTiO3), lithium fluoride (abbreviated as: LiF), calcium fluoride (abbreviated as: CaF2), triphenylamine with triptycene as the core (abbreviated as: H101), 3,4-ethylenedioxythiophene-methoxytriphenylamine (abbreviated as: EDOT -OMeTPA), N-(4-aniline)carbazole-spirobifluorene (abbreviated as: CzPAF-SBF), polythiophene, metal oxides, silicon oxide (abbreviated as: SiO2), strontium titanate (abbreviated as: SrTiO3), cuprous thiocyanate (abbreviated as: CuSCN), etc.; wherein the metal elements may include one or more of Mg, Ni, Cd, Zn, In, Pb, Mo, W, Sb, Bi, Cu, Hg, Ti, Ag, Mn, Fe, V, Sn, Zr, Sr, Ga and Cr.

[0077] In some embodiments, the material of the hole transport layer may include, but is not limited to, one or more of the following materials and their derivatives: 2,2',7,7'-tetrakis[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene (abbreviated as Spiro-OMeTAD), polytriarylamine (abbreviated as PTAA), nickel oxide (abbreviated as NiO x ), poly 3,4-ethylenedioxythiophene: polystyrene sulfonate (abbreviated as: PEDOT: PSS), poly 3-hexylthiophene (abbreviated as: P3HT), WO3 and other materials can transport holes and block electrons.

[0078] Another embodiment of the present application provides a method for preparing the above-mentioned perovskite photovoltaic module 10. The method for preparing the perovskite photovoltaic module 10 includes the following steps: extending a current collector 201 from the first electrode layer of the perovskite cell 10, placing an edge sub-adhesive layer original film on the outer edge of the perovskite cell 10, placing two smaller edge sub-adhesive layer original films on the side where the current collector 201 is to be extended, with the collector 201 positioned between the two edge sub-adhesive layer original films, and placing a thicker encapsulation film original film on the other side. A cover plate 203 is placed on the surfaces of the encapsulation film original film and the edge sub-adhesive layer original film to obtain a pre-finished product. The pre-finished product is laminated. Optionally, the thickness of the thicker edge sub-adhesive layer original film can be twice the thickness of the thinner edge sub-adhesive layer original film. The encapsulation film original film can be at least one of a TPO film, a POE film, an EVA film, a TPU film, a PVB film, and an organic silicone. Optionally, the original film of the edge sub-adhesive layer may be at least one of a desiccant-filled butyl film, a desiccant-filled polyisobutylene film, and a desiccant-filled polyisoprene film.

[0079] It is understood that before the busbar 201 is led out on the first electrode layer, an insulating layer film can be formed on the surface of the first electrode layer, and the led busbar 201 is placed on the surface of the insulating layer film. Optionally, the insulating layer film can be a PI film, a PET film, etc.

[0080] In some embodiments, after lamination, a junction box is provided on the perovskite photovoltaic module 10. The junction box housing can be first fixed to the perovskite photovoltaic module using adhesive, and then the busbar is welded to the welding position inside the junction box. Then, silicone gel is injected into the junction box housing. After the silicone gel cures, the top cover of the junction box is mounted on the junction box housing.

[0081] Another embodiment of the present application provides an electrical device, which includes the above-mentioned perovskite photovoltaic module 10.

[0082] In some embodiments, the perovskite photovoltaic module can be used as a power generation device for an electrical device. The type of power generation device can include, but is not limited to, integrated power generation. The location of the power generation device can include, but is not limited to, the roof or back panel of a car.

[0083] Furthermore, the above-mentioned electrical devices may include mobile devices, such as mobile phones, laptop computers, etc., electric vehicles, electric trains, ships and satellites, power generation systems, etc., but are not limited thereto.

[0084] Another embodiment of the present application provides a photovoltaic system, which includes the above-mentioned perovskite photovoltaic module 10.

[0085] Another embodiment of the present application provides a power generation device, which includes the above-mentioned perovskite photovoltaic module 10.

[0086] In order to make the technical problems, technical solutions and beneficial effects solved by this application clearer, the application will be further described in detail below with reference to the embodiments and drawings. Obviously, the described embodiments are only a part of the embodiments of this application, rather than all the embodiments. The following description of at least one exemplary embodiment is actually only illustrative and is in no way intended to limit the present application and its applications. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0087] If no specific techniques or conditions are specified in the examples, the experiments were carried out according to the techniques or conditions described in the literature in the field or according to the product instructions. All reagents or instruments used without specifying the manufacturer are commercially available conventional products.

[0088] Example 1

[0089] The perovskite cell in this embodiment includes a FTO transparent electrode layer (450 nm thick), a nickel oxide hole transport layer (20 nm thick), a FAPbI3 perovskite layer (500 nm thick), a C60 electron transport layer (20 nm thick), and a Cu electrode layer (100 nm thick) stacked in sequence. The thickness of the FTO transparent electrode layer is 450 nm, the thickness of the nickel oxide hole transport layer is 20 nm, the thickness of the FAPbI3 perovskite layer is 500 nm, the thickness of the C60 electron transport layer is 20 nm, and the thickness of the Cu electrode layer is 100 nm.

[0090] The preparation method of the perovskite photovoltaic module in this embodiment is as follows:

[0091] S101: Laser edge cleaning is performed on the perovskite cell, leaving an 11mm area on all sides to ensure that there is no FTO residue in the cleaned area.

[0092] S102: A PI insulating tape with a thickness of 25 μm is attached to the surface of the Cu electrode layer perpendicular to the scribe line.

[0093] S103: Leading out copper strips from the positive and negative electrodes of the Cu electrode layer as busbars respectively, and extending and leading out the copper strips to the hole positions of the preset edge sub-glue layer on the same side of the perovskite battery.

[0094] S104: Place 8mm wide desiccant-filled butyl rubber strips on the outer edge of the Cu electrode layer. Manufacturer: Quanex, Model: Edge Sealant–SET LP03, in which two 0.4mm thick desiccant-filled butyl rubber strips are stacked on the side where the busbar needs to be led out, with the copper tape located between the two butyl rubber strips, and a 0.8mm thick desiccant-filled butyl rubber strip is placed on the other side, as shown in Figure 3.

[0095] S105: Lay a non-porous TPO film on the product.

[0096] S106: Align the base glass and place a non-perforated tempered glass of the same size as the cover.

[0097] S107: Laminating the product.

[0098] S108: After lamination, a junction box is installed.

[0099] Comparative Example 1

[0100] The perovskite cell in this comparative example is the same as the perovskite cell in Example 1.

[0101] The preparation method of the perovskite photovoltaic module in this comparative example is:

[0102] S101: Laser edge cleaning of the Cu electrode layer of the perovskite battery.

[0103] S102: A PI insulating tape with a thickness of 25 μm is attached to the surface of the Cu electrode layer perpendicular to the scribe line.

[0104] S103: Leading out copper strips from the positive and negative electrodes of the Cu electrode layer as busbars respectively, bending the busbars to the upper surface of the PI insulating tape and extending them toward the middle sub-cell to below the predetermined hole of the cover glass, and bending the busbars upward.

[0105] S104: A butyl rubber strip filled with a desiccant having a thickness of 0.8 mm is placed on the outer edge of the Cu electrode layer. The butyl rubber strip is the same as that in Example 1.

[0106] S105: A TPO film with two holes and a tempered glass with two holes are sequentially placed on the surface of the product as cover plates, so that the bent manifold passes through the holes.

[0107] S106: laminating the product.

[0108] S107: After lamination, a junction box is installed.

[0109] Test Case

[0110] (1) The perovskite photovoltaic modules obtained in Example 1 and Comparative Example 1 were subjected to a damp heat test. The test method was as follows: the positive and negative terminals of the junction box of the perovskite photovoltaic module were short-circuited and placed in a constant temperature and humidity chamber at a temperature of 85°C and a humidity of 85% RH. After 1000 hours (abbreviated as: h), the modules were removed and the photoelectric conversion efficiency loss rate before and after the damp heat test was calculated using the current-voltage (abbreviated as: IV) characteristic curve test. The results are shown in Table 1.

[0111] Table 1

[0112] As can be seen from Table 1, compared with Comparative Example 1, the perovskite photovoltaic module in Example 1 has a lower photoelectric conversion efficiency loss rate, indicating that the structural design of the perovskite photovoltaic module in Example 1 can improve the stability of the photoelectric conversion efficiency of the photovoltaic module.

[0113] (2) The surface morphology of the perovskite photovoltaic module after the wet heat test is shown in Figure 5. Among them, (a) in Figure 5 is the surface morphology of the perovskite photovoltaic module in Comparative Example 1 after the wet heat test, and (b) is the surface morphology of the perovskite photovoltaic module in Example 1 after the wet heat test. In Figure 5 (a), a yellow area appears on the surface of the perovskite photovoltaic module, that is, the upper middle position corresponding to (a), indicating that the perovskite layer has been damaged to a certain extent, and then a yellow area appears on the surface of the perovskite photovoltaic module. In (b), no yellow area appears on the surface of the perovskite photovoltaic module. As can be seen from Figure 5, the risk of damage to the perovskite layer in the perovskite photovoltaic module in Example 1 is lower than that in Comparative Example 1, indicating that the structural design of the perovskite photovoltaic module in the embodiment can reduce the risk of damage to the perovskite layer.

[0114] The technical features of the above-mentioned embodiments can be combined arbitrarily. In order to make the description concise, not all possible combinations of the technical features in the above-mentioned embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0115] The above-described embodiments merely represent several implementation methods of the present application. While the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the present application. It should be noted that a person of ordinary skill in the art may make various modifications and improvements without departing from the spirit of the present application, all of which fall within the scope of protection of the present application. Therefore, the scope of protection of the present patent application shall be determined by the appended claims.

Claims

1. A perovskite photovoltaic module, comprising a perovskite cell, a current collector, an encapsulation layer, and a cover plate stacked in sequence; the perovskite cell comprises a stacked perovskite layer and a first electrode layer, the encapsulation layer is at least laid on the outer edge of the perovskite cell, the encapsulation layer is provided with a channel, and the opening of the channel is located on the side of the encapsulation layer; the current collector is connected to the first electrode layer and passes through the channel on the side of the encapsulation layer.

2. The perovskite photovoltaic module according to claim 1, wherein: At the opening of the channel, the packaging layer covers the entire current collector.

3. The perovskite photovoltaic module according to claim 1 or 2, wherein: The encapsulation layer includes a middle sub-glue layer and an edge sub-glue layer. The middle sub-glue layer is laid on the side of the first electrode layer away from the perovskite layer. The edge sub-glue layer is laid around the perovskite battery. The opening of the channel is located on the side of the edge sub-glue layer.

4. The perovskite photovoltaic module according to claim 3, wherein: The thickness of the edge sub-glue layer is 0.4 mm to 1 mm.

5. The perovskite photovoltaic module according to claim 3 or 4, wherein: There are a plurality of the current collectors, and the edge sub-glue layer is provided with a plurality of the holes, and the plurality of the holes are used for allowing the plurality of current collectors to pass through respectively.

6. The perovskite photovoltaic module according to claim 5, wherein: The openings of the plurality of channels are located on the same side of the edge glue layer.

7. The perovskite photovoltaic module according to any one of claims 3 to 6, wherein: The middle sub-rubber layer includes at least one of a polyolefin elastomer rubber layer, an ethylene-vinyl acetate copolymer rubber layer, a thermoplastic polyurethane elastomer rubber layer, a polyvinyl butyral rubber layer and an organic silicone rubber layer.

8. The perovskite photovoltaic module according to any one of claims 3 to 6, wherein: The edge sub-adhesive layer includes at least one of a desiccant-filled butyl adhesive layer, a desiccant-filled polyisobutylene adhesive layer, and a desiccant-filled polyisoprene adhesive layer.

9. The perovskite photovoltaic module according to any one of claims 1 to 8, wherein: The perovskite photovoltaic module further includes an insulating layer, which is located between the bus bar and the first electrode layer.

10. The perovskite photovoltaic module according to claim 9, wherein: The insulating layer satisfies at least one of the following characteristics: (1) The thickness of the insulating layer is 10 μm to 50 μm; (2) The insulating layer includes at least one of a polyimide insulating layer and a polyethylene terephthalate insulating layer; (3) The insulating layer has at least one adhesive surface, and at least one of the adhesive surfaces faces the first electrode layer.

11. The perovskite photovoltaic module according to any one of claims 1 to 10, wherein: The perovskite photovoltaic module further includes a substrate, which is located on a side of the perovskite cell away from the cover plate.

12. The perovskite photovoltaic module according to claim 11, wherein: The perovskite cell further includes a second electrode layer; the second electrode layer is located on a side of the perovskite layer away from the first electrode layer.

13. An electrical device comprising the perovskite photovoltaic module according to any one of claims 1 to 12.

14. A photovoltaic system comprising the perovskite photovoltaic module according to any one of claims 1 to 12.

15. A power generation device comprising the perovskite photovoltaic module according to any one of claims 1 to 12.

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