Solar cell and preparation method therefor, photovoltaic module, electric device and power generation device

Abstract

The present application relates to a solar cell and a preparation method therefor, a photovoltaic module, an electric device and a power generation device. The solar cell comprises a photovoltaic structure and a busbar structure, wherein the photovoltaic structure comprises a first electrode layer, a light-absorbing layer and a second electrode layer that are sequentially stacked; the busbar structure comprises a busbar member and an insulating layer; the insulating layer is located on the side of the second electrode layer away from the light-absorbing layer; the busbar member comprises a first main body portion and a second main body portion that are sequentially connected; the first main body portion is connected to the second electrode layer; the second main body portion is disposed on the side of the insulating layer away from the second electrode layer; the thickness of the insulating layer is ≥5 nm; and the sum of the thicknesses of the second main body portion and the insulating layer is <500 μm. The solar cell exhibits good stability in photoelectric performance after encapsulation.

Description

Solar cell and preparation method thereof, photovoltaic module, electric device and power generation device

[0001] Related applications

[0002] The present application claims priority to the Chinese patent application No. 2024104244920 filed on April 9, 2024, and entitled "Solar cell and preparation method thereof, photovoltaic module, electric device and power generation device", the whole content of which is incorporated herein by reference. TECHNICAL FIELD

[0003] The present application relates to the technical field of battery materials, in particular to a solar cell and a preparation method thereof, a photovoltaic module, an electric device and a power generation device. BACKGROUND

[0004] A solar cell is a new photovoltaic device that can alleviate the energy crisis. It converts solar radiation energy directly into electrical energy by using the photovoltaic effect. Taking a perovskite solar cell as an example, it uses a perovskite material as a light absorption layer, has the advantages of cost reduction and efficiency improvement, high weak light effect, and wide application scenarios, and is an excellent choice for a new generation of mass-produced photovoltaic cells. After the solar cell converts solar radiation energy into photogenerated current, a busbar structure needs to be connected to an external circuit to collect the photogenerated current and output the photogenerated voltage, so as to obtain electrical energy. Meanwhile, an encapsulation layer is provided to encapsulate the battery device. The photoelectric conversion efficiency of the current solar cell after encapsulation is significantly reduced compared to before encapsulation, so the traditional technology needs to be improved. SUMMARY

[0005] Therefore, the present application aims to provide a solar cell and a preparation method thereof, a photovoltaic module, an electric device and a power generation device, which can improve the stability of photoelectric performance after encapsulation.

[0006] The first aspect of the present application provides a solar cell, comprising:

[0007] a photovoltaic structure comprising a first electrode layer, a light absorption layer and a second electrode layer arranged in sequence;

[0008] a busbar structure comprising a busbar and an insulating layer, the insulating layer being located on a side of the second electrode layer away from the light absorption layer, the busbar comprising a first main body portion and a second main body portion connected in sequence, the first main body portion being connected to the second electrode layer, and the second main body portion being arranged on a side of the insulating layer away from the second electrode layer;

[0009] the thickness of the insulating layer is ≥ 5 nm, and the sum of the thickness of the second main body portion and the thickness of the insulating layer is < 500 μm.

[0010] The solar cell has a micro-nano thickness busbar structure which is different from the millimeter thickness busbar structure of the insulating adhesive, and the stress concentration of the stress at the busbar structure is reduced, and compared with the cell with the millimeter thickness busbar structure, the cell has good photoelectric performance, and the stress concentration at the busbar structure during the lamination packaging process is greatly reduced, the damage to the functional layer of the cell is reduced, and the photoelectric performance stability of the cell after lamination packaging is improved.

[0011] In any embodiment of the present application, the thickness of the first body part is less than or equal to the sum of the thicknesses of the second body part and the insulating layer. In this way, the stress concentration of the area where the first body part of the busbar is located during lamination packaging is reduced, the damage to the functional layer of the cell is reduced, and the photoelectric performance stability of the cell after lamination packaging is improved.

[0012] In any embodiment of the present application, the solar cell satisfies one or more of the following conditions:

[0013] (1) the sum of the thicknesses of the second body part and the insulating layer is ≤360μm;

[0014] (2) the thickness of the second body part is ≥10nm.

[0015] In any embodiment of the present application, the sum of the thicknesses of the second body part and the insulating layer is ≤110μm.

[0016] In any embodiment of the present application, the solar cell satisfies one or more of the following conditions:

[0017] (1) the thickness of the insulating layer is 5nm-50nm;

[0018] (2) the thickness of the first body part is 10nm-100μm;

[0019] (3) the thickness of the second body part is 10nm-100μm.

[0020] In any embodiment of the present application, the solar cell satisfies one or more of the following conditions:

[0021] (1) the thickness of the insulating layer is 10nm-50nm;

[0022] (2) the thickness of the first body part is 10nm-10μm;

[0023] (3) the thickness of the second body part is 10nm-10μm.

[0024] In any embodiment of the present application, the solar cell satisfies one or more of the following conditions:

[0025] (1) the thickness of the first main body part is 50nm-980nm;

[0026] (2) the thickness of the second main body part is 50nm-980nm.

[0027] In any embodiment of the present application, the solar cell satisfies one or more of the following conditions:

[0028] (1) the thickness of the first main body part is 100nm-550nm;

[0029] (2) the thickness of the second main body part is 100nm-500nm.

[0030] In the embodiments of the present application, by setting the thickness of the first main body part and the second main body part in the busbar to be within the above range, the photoelectric performance of the solar cell can be improved while the stress concentration at the busbar structure is reduced as much as possible.

[0031] In any embodiment of the present application, the thickness of the first main body part and the second main body part is the same. In this way, the preparation process is simplified and the main body part of the busbar is integrally formed.

[0032] In any embodiment of the present application, the busbar includes two, and the first main body part of each of the two busbars is connected to the positive electrode and the negative electrode of the second electrode layer, respectively. In the embodiments of the present application, the first main body part of each of the two busbars is connected to the second electrode layer, i.e., the two busbars are electrically connected to the positive electrode and the negative electrode of the photovoltaic structure, respectively, and the current of the photovoltaic structure can be led out through the lead-out part of the busbar for energy storage or power driving.

[0033] In any embodiment of the present application, the stacking direction of the photovoltaic structure is the first direction, and the size of the insulating layer in the width direction perpendicular to the first direction is 1mm-10cm. In this way, the insulation effect is achieved.

[0034] In any embodiment of the present application, the projection of the second main body part is located within the projection of the insulating layer along the stacking direction of the photovoltaic structure. In the embodiments of the present application, the projection of the second main body part is located within the projection of the insulating layer, and the insulating layer can isolate the second main body part of the busbar and the second electrode layer, preventing the second main body part of the busbar from contacting the second electrode layer and causing short circuit of the cell.

[0035] In any embodiment of the present application, the extension direction of the second main body part and the extension direction of the first main body part are arranged perpendicularly. In the embodiment of the present application, the extension direction of the second main body part and the extension direction of the first main body part are arranged perpendicularly, which is beneficial to collect the current of the photovoltaic structure and lead the current out of the photovoltaic structure.

[0036] In any embodiment of the present application, the material of the current collector includes an electrically conductive material with an electrical conductivity ≥ 9.5 x 10 5 S m -1 In the embodiment of the present application, the electrically conductive material with an electrical conductivity ≥ 9.5 x 10 5 S m -1 S m -1 As the material of the current collector, the electrically conductive material with an electrical conductivity ≥ 9.5 x 10

[0037] In any embodiment of the present application, the electrically conductive material includes at least one of a metal material, a carbon material and an electrically conductive metal oxide. The metal material, the carbon material and the electrically conductive metal oxide can all be used as the material of the current collector, and the optional material types are various.

[0038] In any embodiment of the present application, the material of the insulating layer includes at least one of an inorganic insulating material and an organic insulating material.

[0039] In any embodiment of the present application, the solar cell satisfies at least one of the following conditions:

[0040] (1) The inorganic insulating material includes at least one of a metal halide and a metal oxide;

[0041] (2) The organic insulating material includes at least one of bathocuproine, poly[9,9-dioctylfluorene-9,9-bis(N,N-dimethylpropyl)fluorene], fullerene and its derivatives, and polymethyl methacrylate.

[0042] In any embodiment of the present application, the metal cation in the metal halide and the metal oxide includes at least one of silver ion, copper ion, aluminum ion, cobalt ion, titanium ion, tungsten ion, tantalum ion and lithium ion.

[0043] In any embodiment of the present application, the light-absorbing layer includes at least one of a perovskite light-absorbing layer, a dye-sensitized light-absorbing layer, a thin-film silicon light-absorbing layer and an organic light-absorbing layer. In the embodiment of the present application, the above-mentioned light-absorbing layer material can generate hole-electron pairs by absorbing light and being excited by photons, and the holes and the electrons are separated under the action of an electric field, and then transmitted to the first electrode layer and the second electrode layer, respectively, and then led out to an external circuit through the current collector to form a loop, which can be used to drive a load to work.

[0044] In any embodiment of the present application, the solar cell further comprises an encapsulation layer and a substrate, the substrate is arranged on the side of the first electrode layer of the photovoltaic structure away from the light-absorbing layer, and the encapsulation layer and the substrate cooperate to encapsulate the photovoltaic structure and the busbar structure.

[0045] In any embodiment of the present application, the solar cell further comprises an external busbar and a junction box, the external busbar is connected to the second main body part, and the junction box is connected to the external busbar to lead the current of the solar cell out of the photovoltaic module. The arrangement of the junction box and the external busbar helps to lead the current of the solar cell out of the photovoltaic module, which can be used to drive a load or store electrical energy.

[0046] The second aspect of the present application provides a preparation method of the solar cell of the first aspect of the present application, comprising the following steps:

[0047] Preparation of the photovoltaic structure in which the first electrode layer, the light-absorbing layer and the second electrode layer are sequentially stacked;

[0048] Arrangement of an insulating layer on the side of the second electrode layer away from the light-absorbing layer to form the first main body part of the busbar structure connected to the second electrode layer and the second main body part of the busbar structure on the side of the insulating layer away from the second electrode layer.

[0049] In the embodiments of the present application, the solar cell can be prepared by the above preparation method, and the specific implementation manner is not limited, and any means that can be realized by those skilled in the art can be used.

[0050] In any embodiment of the present application, at least one of the insulating layer and the busbar structure is formed by a vapor deposition method.

[0051] In any embodiment of the present application, the second electrode layer, the insulating layer and the busbar structure are sequentially formed by a vapor deposition method.

[0052] In any embodiment of the present application, the vapor deposition method comprises at least one of a chemical vapor deposition method and a physical vapor deposition method.

[0053] The third aspect of the present application provides a photovoltaic module comprising the solar cell provided in the first aspect of the present application.

[0054] The fourth aspect of the present application provides an electric device comprising at least one selected from the solar cell provided in the first aspect of the present application and the photovoltaic module provided in the third aspect of the present application.

[0055] The fifth aspect of the present application provides a power generation device, comprising at least one selected from the solar cell provided in the first aspect of the present application and the photovoltaic module provided in the third aspect of the present application. BRIEF DESCRIPTION OF DRAWINGS

[0056] In order to more clearly illustrate the technical solutions of the present application, the drawings used in the present application will be briefly introduced as follows. Obviously, the drawings described below are only some embodiments of the present application, and other drawings can also be obtained by those skilled in the art without creative labor on the basis of the drawings.

[0057] Fig. 1 is a schematic top view of a solar cell according to an embodiment of the present application.

[0058] Fig. 2 is a schematic right view of a partial cross-section of the solar cell shown in Fig. 1.

[0059] Fig. 3 is a schematic view of a power consuming device using the solar cell as a power source according to an embodiment of the present application.

[0060] Fig. 4 is a schematic top view of a solar cell device obtained in step 11) of Comparative Example 1 of the present application.

[0061] Fig. 5 is a schematic flow chart of a preparation process of the solar cell according to Example 1 of the present application.

[0062] BRIEF DESCRIPTION OF DRAWINGS 1, solar cell; 101, sub-cell; 11, first electrode layer; 12, electron transport layer; 13, interface modification layer; 14, light absorbing layer; 15, hole transport layer; 16, second electrode layer; 17, insulating layer; 18, busbar; 181, lead-out terminal; 182, second main body portion; 184, first main body portion; 19, substrate; 2, power consuming device; 31, insulating tape; 32, conductive tape; 321, lead-out terminal of conductive tape; 322, overlapping portion of conductive tape. DETAILED DESCRIPTION

[0063] Hereinafter, specific embodiments of the present application will be described in detail with appropriate reference to the accompanying drawings. However, there will be cases where unnecessary detailed description is omitted. For example, there will be cases where detailed description of matters known to those skilled in the art, repeated description of substantially identical structures are omitted. This is to avoid the following description from becoming unnecessarily lengthy and to facilitate understanding by those skilled in the art. Furthermore, the drawings and the following description are provided to enable those skilled in the art to fully understand the present application, and are not intended to limit the subject matter recited in the claims.

[0064] The ranges disclosed herein are intended to be "open" ranges, i.e., the upper and lower limits of the range are not included. The ranges can be "closed" ranges, i.e., the upper and lower limits of the range are included. The ranges can be arbitrarily combined, i.e., any upper limit can be combined with any lower limit to form a range. For example, if a range of 60-120 and a range of 80-110 are listed, it is understood that a range of 60-110 and a range of 80-120 are also contemplated. Furthermore, if a minimum range value of 1 and 2 are listed, and if a maximum range value of 3, 4, and 5 are listed, then the following ranges are all contemplated: 1-3, 1-4, 1-5, 2-3, 2-4, and 2-5. In this application, unless otherwise indicated, a numerical range "a-b" means a range of any combination of the numbers a and b, wherein a and b are both real numbers. For example, the numerical range "0-5" means that all real numbers between "0-5" have been listed herein, and "0-5" is merely a shorthand for listing all of those numbers. Also, when a parameter is stated to be an integer > 2, it is equivalent to state that the parameter is, for example, an integer 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, etc.

[0065] All embodiments and optional embodiments of the present application can be combined with each other to form new technical solutions, unless otherwise specified. All technical features and optional technical features of the present application can be combined with each other to form new technical solutions, unless otherwise specified.

[0066] All steps of the present application can be performed in sequence or randomly, preferably in sequence, unless otherwise specified. For example, the method comprises steps (a) and (b), which means that the method can comprise steps (a) and (b) in sequence, or steps (b) and (a) in sequence. For example, the method can further comprise step (c), which means that step (c) can be added to the method in any order, for example, the method can comprise steps (a), (b) and (c), or steps (a), (c) and (b), or steps (c), (a) and (b), etc.

[0067] Unless otherwise specified, "including" and "comprising" mentioned in the present application are open-ended. For example, "including" and "comprising" can mean that other components not listed can also be included or contained, or only the listed components can be included or contained.

[0068] If not specifically stated otherwise, the term "or" in this application is inclusive. For example, the phrase "A or B" means "A, B, or both A and B." More specifically, any of the following satisfy the condition "A or B": A is true (or present) and B is false (or not present); A is false (or not present) and B is true (or present); or both A and B are true (or present).

[0069] Referring to FIG. 1, the application provides a solar cell 1 comprising a photovoltaic structure and a busbar structure.

[0070] Referring to FIGS. 1 and 2, the photovoltaic structure comprises a first electrode layer 11, a light-absorbing layer 14, and a second electrode layer 16 arranged in sequence.

[0071] The busbar structure comprises an insulating layer 17 and a busbar 18. The insulating layer 17 is located on the side of the second electrode layer 16 away from the light-absorbing layer 14 (see FIG. 2), and the busbar 18 comprises a first main body 184 and a second main body 182 connected in sequence (see FIG. 1). The first main body 184 is connected to the second electrode layer 16, and the second main body 182 is arranged on the side of the insulating layer 17 away from the second electrode layer 16.

[0072] The thickness of the insulating layer 17 is ≥5 nm, and the sum of the thicknesses of the second main body 182 and the insulating layer 17 is <500 μm.

[0073] It is worth noting that the insulating layer 17 is arranged on the side of the second electrode layer 16 away from the light-absorbing layer 14, and the second main body 182 is arranged on the side of the insulating layer 17 away from the second electrode layer 16. In this way, the second main body 182 above the insulating layer 17 and the second electrode layer 16 below the insulating layer 17 are isolated by the insulating layer 17, so as to prevent the second main body 182 from being in conduction with the second electrode layer 16 below the insulating layer 17 and causing internal short circuit of the cell. The first main body 184 of the busbar 18 is connected to the second electrode layer 16, and is used to lead out the current of the photovoltaic structure.

[0074] Some solar cells, for example, perovskite cells, use millimeter-thick busbar structures such as insulating glue, ink-printed insulating materials, conductive adhesive tape, and thermoplastic tubes in the active area range of perovskite cells. Due to the large thickness of the busbar structure, serious stress concentration and damage to the functional layers of the cell occur during subsequent lamination and packaging, resulting in a significant decrease in photoelectric conversion efficiency before and after lamination.

[0075] The above-mentioned solar cell 1 of the present application adopts a busbar structure design different from the millimeter-level thickness of insulating glue and the like, and a micro-nanometer-level thickness of the busbar structure is prepared, which can reduce the stress concentration of stress at the busbar structure, and compared with the cell adopting the millimeter-level thickness of the busbar structure, it greatly reduces the stress concentration at the busbar structure in the lamination packaging process, reduces the damage to the functional layer of the cell, and improves the photoelectric performance stability of the cell after lamination packaging.

[0076] It can be understood that the sum of the thickness of the second main body part 182 of the busbar 18 and the insulating layer 17 is <500 μm; as an example, the sum of the thickness of the second main body part 182 of the busbar 18 and the insulating layer 17 can be 10 nm, 15 nm, 20 nm, 25 nm, 30 nm, 35 nm, 40 nm, 45 nm, 50 nm, 55 nm, 60 nm, 70 nm, 80 nm, 90 nm, 100 nm, 110 nm, 120 nm, 130 nm, 150 nm, 160 nm, 180 nm, 200 nm, 210 nm, 250 nm, 250 nm, 500 nm, 510 nm, 550 nm, 600 nm, 700 nm, 800 nm, 900 nm, 950 nm, 990 nm, 1000 nm, 1050 nm, 1100 nm, 1200 nm, 1300 nm, 1400 nm, 1500 nm, 2000 nm, 5000 nm, 10 μm, 20 μm, 50 μm, 100 μm, 150 μm, 200 μm, 250 μm, 250.01 μm, 250.05 μm, 250.1 μm, 250.5 μm, 251 μm, 300 μm, 350 μm, 350.01 μm, 350.05 μm, 360 μm, and in some examples, a range formed by any two of the above-mentioned point values, and the like below.

[0077] Further, the sum of the thickness of the second main body part 182 of the busbar 18 and the insulating layer 17 is ≤360 μm; further, the sum of the thickness of the second main body part 182 of the busbar 18 and the insulating layer 17 is ≤350.1 μm, or ≤350.05 μm, or ≤350.01 μm. Further, the sum of the thickness of the second main body part 182 of the busbar 18 and the insulating layer 17 is ≤110 μm. Further, the sum of the thickness of the second main body part 182 and the insulating layer 17 is 15 nm-110 μm.

[0078] In some embodiments of the present application, the thickness of the first main body part 184 is less than or equal to the sum of the thickness of the second main body part 182 and the insulating layer 17. In this way, the stress concentration of the area where the first main body part 184 of the busbar is located during lamination packaging can be reduced, the damage to the functional layer of the cell is reduced, and the photoelectric performance stability of the cell after lamination packaging is improved.

[0079] In some embodiments of the application, the thickness of the second main portion 182 is ≥ 10 nm. This ensures good conductive busbar performance. Further, the thickness of the first main portion 184 is ≥ 10 nm.

[0080] It is understood that the thickness of the insulating layer 17 is ≥ 5 nm, and as examples, the thickness of the insulating layer 17 can be 5 nm, 10 nm, 15 nm, 20 nm, 30 nm, 50 nm, 100 nm, and so on, and in some examples, also within a range constituted by any two of the above-mentioned values.

[0081] In any embodiments of the application, the thickness of the first main portion 184 is less than or equal to the sum of the thicknesses of the second main portion 182 and the insulating layer 17. In this way, stress concentration in the area of the first main portion of the busbar during lamination packaging can be reduced, and damage to the battery functional layer caused thereby can be reduced, and the photoelectric performance stability of the battery after lamination packaging can be improved.

[0082] In any embodiments of the application, the thickness of the insulating layer 17 is 5 nm to 50 nm, and as examples, the thickness can be 5 nm, 8 nm, 10 nm, 15 nm, 20 nm, 25 nm, 30 nm, 35 nm, 40 nm, 45 nm, 50 nm. Further, the thickness of the insulating layer 17 can be 10 nm to 50 nm. Within this range, the insulating layer 17 can provide good insulation, and the thickness of the insulating layer 17 can be controlled as low as possible to reduce stress concentration.

[0083] In any embodiments of the application, the thickness of the first main portion 184 is 10 nm to 100 μm. As examples, the thickness can be 10 nm, 15 nm, 20 nm, 25 nm, 30 nm, 35 nm, 40 nm, 45 nm, 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, 100 nm, 110 nm, 120 nm, 130 nm, 150 nm, 160 nm, 180 nm, 200 nm, 210 nm, 250 nm, 250 nm, 500 nm, 510 nm, 550 nm, 600 nm, 700 nm, 800 nm, 900 nm, 950 nm, 990 nm, 1000 nm, 10 μm, 30 μm, 50 μm, 70 μm, 80 μm, 100 μm. Further, the thickness of the first main portion 184 can be 10 nm to 10 μm, or 50 nm to 980 nm, or further 100 nm to 550 nm. Within this range, the first main portion 184 can provide good conductive busbar performance, and the thickness of the first main portion 184 can be controlled as low as possible to reduce stress concentration, and to improve the photoelectric performance of the solar cell after packaging.

[0084] In any embodiment of the present application, the thickness of the second body part 182 is 10 nm to 100 μm, for example, the thickness can be 10 nm, 15 nm, 20 nm, 25 nm, 30 nm, 35 nm, 40 nm, 45 nm, 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, 100 nm, 110 nm, 120 nm, 130 nm, 150 nm, 160 nm, 180 nm, 200 nm, 210 nm, 250 nm, 250 nm, 500 nm, 510 nm, 550 nm, 600 nm, 700 nm, 800 nm, 900 nm, 950 nm, 980 nm, 990 nm, 1000 nm, 10 μm, 30 μm, 50 μm, 70 μm, 80 μm, 100 μm. Further, the thickness of the second body part 182 can be 10 nm to 10 μm, or 50 nm to 980 nm, or 50 nm to 500 nm. Still further, the thickness of the second body part 182 is 100 nm to 500 nm. Within this range, the second body part 182 can provide good conductive busbar property, and at the same time, the second body part 182 can be controlled to have as low thickness as possible to reduce stress concentration, and thus improve the photoelectric performance of the packaged solar cell.

[0085] Further, in some embodiments, the thickness of the first body part 184 and the second body part 182 is the same; still further, the first body part 184 and the second body part 182 can be formed by the same process. In this way, the preparation process is simplified, and the one-piece forming of the busbar body part is achieved. It can be understood that in other examples, the thickness of the first body part 184 and the second body part 182 can also be different.

[0086] In any embodiment of the present application, the busbar 18 includes two, and the first body part 184 of the two busbars 18 is respectively electrically connected to the positive and negative electrodes of the second electrode layer 16. The first body part 184 of the two busbars 18 is respectively connected to the second electrode layer, i.e., the two busbars are respectively electrically connected to the positive and negative electrodes of the photovoltaic structure, and the current of the photovoltaic structure can be led out through the lead-out part 181 of the busbar 18 for energy storage or power driving. Further, the second body part 182 of the two busbars 18 is respectively arranged on the side of the insulating layer 17 away from the second electrode layer 16.

[0087] In any embodiment of the present application, the solar cell 1 further comprises an external busbar (not shown in the figure) connected to the second body part 182 and a junction box (not shown in the figure) connected to the external busbar, for leading the current of the solar cell out of the photovoltaic module. The junction box and the external busbar are arranged to help lead the current of the solar cell out of the photovoltaic module, which can be used to drive a load or store electric energy. The external busbar can be connected to the second body part 182 by welding, laying, or the like.

[0088] In any embodiment of the present application, the dimension of the insulating layer 17 in the width direction (i.e. the X direction in FIG. 1) perpendicular to the first direction (i.e. the Z direction perpendicular to the plane formed by the X direction and the Y direction in FIG. 1) is 1 mm to 10 cm. In a specific example, the insulating layer 17 is in the length direction (i.e. the Y direction in FIG. 1) perpendicular to the first direction.

[0089] It can be understood that the width of the insulating layer 17 can be changed according to actual needs. Further, in order to ensure the effectiveness of the insulating layer 17, the projection of the second body part 182 is located within the projection of the insulating layer 17 along the stacking direction of the photovoltaic structure, i.e. the edge of the second body part 182 does not exceed the edge of the insulating layer 17 where it is located. In this way, the arrangement of the insulating layer 17 can isolate the busbar second body part 182 and the second electrode layer 16, preventing the busbar second body part 182 from contacting the second electrode layer 16 and causing short circuit of the cell.

[0090] Please continue to refer to FIG. 1. In any embodiment of the present application, the second body part 182 is arranged on the insulating layer 17 and along the extension direction (i.e. the length direction of the insulating layer, the Y direction shown in FIG. 1) of the insulating layer 17, and the first body part 184 is arranged along the length direction (or the extension direction) of the second electrode layer 16 connected thereto. Further, the extension direction of the insulating layer 17 is perpendicular to the length direction of the second electrode layer 16 of the sub-cell.

[0091] It can be understood that the second electrode layer 16 is divided into a plurality of sub-cells 101 by the channel groups, the second electrode layer 16 is connected with one of the sub-cells 101, further, in order to improve the effective cell area of the photovoltaic module, the first main part 184 is connected with the second electrode layer 16 of the outermost terminal cell of the series sub-cells, and further, the first main part 184 is arranged along the length direction of the second electrode layer 16 of the outermost terminal cell to improve the current collecting effect. Further, the second electrode layer 16 is divided into a plurality of sub-cells 101 by the P3 scribe line in the channel group, the length direction of the second electrode layer 16 of each sub-cell 101 is the length direction of the P3 scribe line (X direction shown in FIG. 1), and the P3 scribe line extends from the second electrode layer 16 (i.e. the back electrode) to the upper surface of the first electrode layer (transparent conductive substrate). Further, the extension direction of the second main part 182 and the extension direction of the first main part 184 are arranged perpendicularly, so that the lead-out part 181 is closer to the middle part of the cell through the second main part 182, and the two lead-out parts 181 are closer to the middle part of the cell through the two current collecting members 18, which facilitates the connection of the lead-out part 181 with the junction box.

[0092] Referring to FIG. 1, further, the insulating layer 17 is arranged at a position close to one side of the plane where the second electrode layer 16 of the photovoltaic structure is located; specifically, the insulating layer 17 is arranged at the same end of the second electrode layer 16 of each sub-cell 101. In other examples, the insulating layer 17 can also be arranged at the edge position or the middle position of the plane where the second electrode layer 16 of the photovoltaic structure is located. It can be understood that the arrangement position of the insulating layer 17 can be adjusted according to the required arrangement of the position of the junction box.

[0093] In any embodiment of the present application, the material of the current collecting member 18 includes a conductive material with a conductivity ≥ 9.5 × 10 5 S m -1 . The present application uses a conductive material with a conductivity ≥ 9.5 × 10 5 S m -1 as the material of the current collecting member, which can ensure the conductivity of the current collecting structure, realize the collection of current, and improve the working efficiency and stability of the circuit. Further, the conductive material includes at least one of a metal material, a carbon material, and a conductive metal oxide. The metal material includes one or more of gold, silver, titanium, copper, and aluminum; the carbon material includes one or more of carbon quantum dots, graphene, carbon nanotubes, carbon nanosheets, carbon fibers, and carbon black; and the conductive metal oxide includes one or more of ITO, AZO, indium-doped tungsten oxide (IWO), and cerium-doped indium oxide (ICO). In some examples, the current collecting member 18 can be a stack of one or more of a metal layer, a carbon material layer, and a conductive metal oxide layer.

[0094] In any embodiment of the present application, the material of the insulating layer 17 includes at least one of an inorganic insulating material and an organic insulating material.

[0095] Further, the inorganic insulating material includes at least one of a metal halide and a metal oxide. The metal cation in the metal halide and the metal oxide includes at least one of silver ion, copper ion, aluminum ion, cobalt ion, titanium ion, tungsten ion, tantalum ion and lithium ion. Among them, the cobalt ion includes at least one of divalent and trivalent cobalt ions, and the copper ion includes at least one of monovalent and divalent copper ions.

[0096] Further, the organic insulating material includes at least one of bathocuproin (BCP, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline), poly[9,9-dioctylfluorene-9,9-bis(N,N-dimethylpropyl)fluorene], fullerene and its derivatives, and polymethyl methacrylate.

[0097] In some examples, the insulating layer 17 can be a stack of one or more of the above-mentioned inorganic insulating material layer and the above-mentioned organic insulating material layer.

[0098] It is worth noting that in an example, the insulating layer 17 is a BCP nano insulating layer. Bathocuproin is a hole blocking material, which is a commonly used material in photovoltaic components, has a mature deposition process, and has a low evaporation temperature of about 100°C, causing little damage to the battery device.

[0099] In any embodiment of the present application, the solar cell 1 further includes a substrate 19 arranged on the side of the photovoltaic structure where the first electrode layer 11 is located. The solar cell 1 further includes an encapsulation layer (not shown in the figure). The encapsulation layer is arranged on the side of the photovoltaic structure where the second electrode layer 16 is located, and the encapsulation layer and the substrate 19 cooperate to encapsulate the photovoltaic structure and the busbar structure. Further, a buffer adhesive layer is further included between the encapsulation layer and the second electrode layer 16, and the buffer adhesive layer is formed by softening and casting the original film of the buffer adhesive layer under lamination conditions. At this time, the buffer adhesive layer not only buffers the stress on the perovskite layer, but also has a certain sealing effect on the perovskite cell. The buffer adhesive layer includes at least one of thermoplastic polyolefin (TPO), ethylene-octene copolymer (POE), ethylene-vinyl acetate copolymer (EVA), thermoplastic polyurethane elastomer (TPU) and polyvinyl butyral (PVB).

[0100] Further, the encapsulation layer can be an encapsulation glass. Further, an exit hole is provided on the encapsulation layer, and the exit portion 181 of the busbar 18 can extend out of the photovoltaic structure from the exit hole of the encapsulation layer. Further, the exit hole can be arranged at a position corresponding to the position of the exit portion 181, for example, the exit hole can be arranged at a position close to one side or edge of the encapsulation layer, or at a middle position.

[0101] Further, the substrate 19 is a transparent substrate, which includes one of a glass substrate or an organic polymer film, wherein the organic polymer film includes one of polyethylene terephthalate (PET) or polyethylene naphthalate (PEN).

[0102] Further, a first transport functional layer is arranged between the first electrode layer 11 and the light-absorbing layer 14; further, a second transport functional layer is arranged between the second electrode layer 16 and the light-absorbing layer 14. One of the first transport functional layer and the second transport functional layer is an electron transport functional layer, and the other is a hole transport functional layer.

[0103] In some embodiments, the solar cell 1 includes the substrate 19, the first electrode layer 11, the first transport functional layer, the light-absorbing layer 14, the second transport functional layer, and the second electrode layer 16 arranged in sequence.

[0104] wherein P1, P2, and P3 are etching regions arranged across layers, for dividing the film layer prepared in a large area into different components, so as to form a series connection battery structure; wherein P1, P2, and P3 are respectively used for connecting the structure layers arranged at intervals, so that the structure layer between the first electrode layer 11 of one sub-cell and the second electrode layer 16 of another sub-cell forms a path, and the perovskite cell forms a perovskite cell assembly. P1, P2, and P3 can each independently be a linear etching region, also referred to as an etching line. P1, P2, and P3 can each independently be a laser etching region. The number of P1, P2, and P3 can each independently be one or more.

[0105] Referring to FIG. 2, P1 is connected to the substrate 19 from the surface of the first electrode layer 11 through the bottom of the first electrode layer 11, so that the first electrode layers 11 of the left and right (or adjacent sub-cells) of the split P1 are not connected to each other (to achieve insulation), and the material in the P1 etching area is consistent with that in the first transport function layer. P2 is connected to the upper surface (or the upper surface of the interface modification layer 13) of the first transport layer from the surface of the second transport layer, through the second transport layer and the light absorption layer 14, and the material in the P2 etching area is consistent with that of the second electrode layer 16, or other materials (such as PbSO4 protective layer) can be filled in the P2 etching area to prevent the material of the second electrode layer or water and oxygen from directly contacting the perovskite layer 14, so as to connect the first electrode layer 11 and the second electrode layer 16 of adjacent sub-cells; P3 is connected to the upper surface of the first electrode layer 11 from the surface of the second electrode layer 16, through the second electrode layer 16, the second transport layer, the light absorption layer 14 and the first transport layer, so that the second electrode layers 16 of the left and right (or adjacent sub-cells) of P3 are not connected to each other (to achieve insulation). The P3 etching area is filled with materials or not filled with materials, which can be selected by those skilled in the art according to actual needs. As an example, a PbSO4 protective layer can be filled outside the perovskite layer in the P3 etching area, which can protect the exposed perovskite layer 14 and isolate water and oxygen, thereby improving the stability of the solar cell.

[0106] In some embodiments, the width of P1 is 10 μm to 50 μm, for example, 10 μm, 20 μm, 30 μm, 40 μm, 50 μm.

[0107] In some embodiments, the width of P2 is 10 μm to 200 μm, for example, 10 μm, 20 μm, 30 μm, 40 μm, 50 μm, 100 μm, 150 μm, 180 μm, 200 μm. Further, the interval between P2 and P1 can be 20 μm to 80 μm, for example, 20 μm, 30 μm, 40 μm, 50 μm, 60 μm, 70 μm, 80 μm.

[0108] In some embodiments, the width of P3 is 10 μm to 50 μm, for example, 10 μm, 15 μm, 20 μm, 30 μm, 40 μm, 50 μm. Further, the interval between P3 and P2 can be 20 μm to 40 μm, for example, 20 μm, 30 μm, 40 μm.

[0109] The electron transport layer material includes, but is not limited to, one or more of intrinsic n-type semiconductor, modified n-type semiconductor, [6,6]-phenyl C61 butyric acid methyl ester (PC61BM), [6,6]-phenyl C71 butyric acid methyl ester (PC71BM), fullerene and its derivatives. Among them, the intrinsic n-type semiconductor includes one or more of tin oxide, titanium oxide, zinc oxide; the modified n-type semiconductor includes an intrinsic semiconductor doped with at least one of bismuth, aluminum, manganese, magnesium, chlorine, such as one or more of tin oxide, titanium oxide and zinc oxide. The preparation method of the electron transport layer includes one or more of spin coating, screen printing, vacuum evaporation, physical vapor deposition (PVD), chemical vapor deposition (CVD), reactive plasma deposition (RPD). In order to further reduce the interface non-radiative recombination, the electron transport layer can have an interface modification layer, including one or more of alkali metal halide, organic amine halide, inorganic metal oxide. The structure of the electron transport layer includes one of single layer, double layer, multi-layer.

[0110] The hole transport layer includes, but is not limited to, one or more of CuSCN, Cul, CuS, CuGaO2, MoS2, molybdenum oxide, copper phthalocyanine, copper-nickel composite oxide, nickel oxide, WO3, alumina oxide, a polymer of 3-hexylthiophene, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], polycarbazole-thiophene-benzothiadiazole-thiophene, 2,2',7,7'-tetra[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene (spiro-OMeTAD), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine]. The preparation method of the hole transport layer includes one or more of spin coating, screen printing, physical vapor deposition (PVD), reactive plasma deposition (RPD), doctor blading, slot die.

[0111] Further, the thickness of the hole transport layer can be 20nm-50nm, as an example, the thickness can be 20nm, 30nm, 40nm, 50nm.

[0112] The light absorbing layer can be, but is not limited to, a perovskite light absorbing layer. For example, the light absorbing layer can also include at least one of a dye-sensitized light absorbing layer, a thin-film silicon light absorbing layer and an organic light absorbing layer. The light absorbing layer can generate hole-electron pairs by absorbing light and being excited by photons, and under the action of an electric field, the holes and electrons are separated, and the electrons and holes are transported to the first electrode layer and the second electrode layer, respectively, and then are introduced to an external circuit through a busbar to form a loop, which can be used to drive a load to work.

[0113] For example, the perovskite light-absorbing layer can be prepared by any one or more of the methods commonly used in the art, including but not limited to spin coating, doctor blading, slot die, vacuum deposition, and inkjet printing. To further reduce the non-radiative recombination at the interface, the perovskite light-absorbing layer can be provided with an interface modification layer, including one or more of an organic amine halide, an organic thiocyanate, a Lewis acid, and a Lewis base.

[0114] Further, the perovskite light-absorbing layer can have a crystal structure of ABX3or A2CDX6. In this structure, A is a monovalent cation, B is a divalent metal cation, C is a monovalent metal cation, D is a trivalent metal cation, and X is a monovalent anion.

[0115] Optionally, A is a monovalent cation with a relatively large radius, including at least one of an organic cation and a metal cation. More optionally, the organic cation includes at least one of an organic amine ion, a formamidinium ion (HC(NH2)2 + , FA + ), and an imidazolium ion. More optionally, the metal cation includes at least one of Li + , a sodium ion (Na + ), a potassium ion (K + ), a rubidium ion (Rb + ), and a cesium ion (Cs + ). Further, the organic amine ion includes at least one of a methylamine ion (CH3NH3 + , MA + ), a dimethylammonium ion (MDA 2+ ), a phenethylammonium ion (PEA + ), an oleyl ammonium ion (OA + ), an ethylamine ion, a propylamine ion, a butylamine ion, a pentylamine ion, and a hexylamine ion.

[0116] Optionally, B includes at least one of Pb 2+ , Sn 2+ , Be 2+ , Mg 2+ , Ca 2+ , Sr 2+ , Ba 2+ , Zn 2+ , Ge 2+ , Fe 2+ , Co 2+ , Cu 2+ , and Ni 2+ . More optionally, B includes one or both of Pb 2+ and Sn 2+ .

[0117] Optionally, the C ion comprises at least one of Cs + , Ag + , K + , and Rb + .

[0118] Optionally, the D ion comprises at least one of Bi 3+ , Ni 3+ , Fe 3+ , and Cu 3+ .

[0119] Optionally, the X ion comprises at least one of fluoride ion (F - ), chloride ion (Cl - ), bromide ion (Br - ), iodide ion (I - ), thiocyanate ion (SCN - ); optionally, the X ion comprises at least one of Cl - , Br - , and I - .

[0120] It can be understood that the perovskite material in the perovskite light-absorbing layer described above can be selected from at least one of CsFAPbX3, CsMAPbX3, CsFAMAPbX3, CsPbX3, MAPbX3, FAPbX3, CsFAPbSnX3, CsMAPbSnX3, CsFAMAPbSnX3, CsPbSnX3, MAPbSnX3, and FAPbSnX3. Further, as an example, the perovskite material in the perovskite light-absorbing layer described above can be selected from at least one of CsFAPbI3, CsPbI3, FAPbI3.

[0121] In some examples, the method for preparing the perovskite light-absorbing layer described above comprises the following steps: mixing the A-containing material, BX2, and a solvent to prepare a perovskite precursor solution; then coating the perovskite precursor solution on a corresponding substrate, and annealing to obtain the perovskite light-absorbing layer.

[0122] The first electrode layer 11 comprises at least one of indium tin oxide (ITO), fluorine-doped tin oxide (FTO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), and the like conductive metal oxide. Further, the resistivity of the first electrode layer 11 is 4-30 Ωcm.

[0123] Further, in order to enable the light to be effectively transmitted to the light-absorbing layer 14, the first electrode layer 11 in the solar cell 1 is configured as a transparent electrode, and the second electrode layer 16 is configured as a back electrode. Further, the first electrode layer 11 and the substrate 19 form a transparent conductive glass, such as ITO glass, FTO glass, AZO glass, GZO glass.

[0124] The material of the second electrode layer 16 (i.e. the material of the back electrode) comprises one or more of a metal material, a carbon material, and a conductive metal oxide. Among them, the metal material comprises one or more of gold, silver, titanium, copper, and aluminum; the carbon material comprises one or more of carbon quantum dots, graphene, carbon nanotubes, carbon nanosheets, carbon fibers, and carbon black; and the conductive metal oxide comprises one or more of ITO, AZO, indium-doped tungsten oxide (IWO), and cerium-doped indium oxide (ICO). In addition, the second electrode layer 16 can also be a multi-layer or mixed back electrode formed by combining the above three types of materials. The preparation method of the second electrode layer 16 comprises one of thermal evaporation, electron beam evaporation (EBD), sputtering, hot-wire chemical vapor deposition (HWCVD), atomic layer deposition (ALD), physical vapor deposition (PVD), reactive plasma deposition (RPD), doctor blading, and slot die.

[0125] It can be understood that the solar cell 1 includes a formal structure and a reverse structure in terms of structure. For the formal structure, as a non-limiting example, referring to FIG. 2, the solar cell 1 comprises a first electrode layer 11 and an electron transport layer 12, a light-absorbing layer 14, a hole transport layer 15, and a second electrode layer 16 which are sequentially stacked on the first electrode layer 11. Among them, the first electrode layer 11 is a transparent electrode, and the second electrode layer 16 is a back electrode. Further, an interface modification layer 13 can also be included between the electron transport layer 12 and the light-absorbing layer 14.

[0126] Further, the thickness of the interface modification layer 13 is 1 nm to 5 nm.

[0127] For the reverse structure, as a non-limiting example, the solar cell 1 comprises a first electrode layer and a hole transport layer, a light-absorbing layer, an electron transport layer, and a second electrode layer which are sequentially stacked on the first electrode layer. Among them, the first electrode layer is a transparent electrode, and the second electrode layer is a back electrode. Further, an interface modification layer can also be included between the electron transport layer and the second electrode layer.

[0128] Specifically, as an example, the solar cell is of a reverse structure, and the preparation method thereof comprises the following steps:

[0129] Step 1: etching and cleaning the transparent electrode, and drying;

[0130] Step 2: performing P1 line etching on the transparent electrode, penetrating the transparent conductive layer;

[0131] Step 3: sequentially preparing a hole transport layer on the transparent electrode;

[0132] Step 4: preparing a perovskite light-absorbing layer on the hole transport layer;

[0133] Step 5: preparing an electron transport layer on the perovskite light-absorbing layer;

[0134] Step 6: performing P2 scribing, the P2 scribe penetrating the electron transport layer, the perovskite light-absorbing layer and the hole transport layer;

[0135] Step 7: preparing a back electrode layer on the electron transport layer;

[0136] Step 8: performing P3 scribing, the P3 scribe penetrating the back electrode layer, the electron transport layer, the perovskite light-absorbing layer and the hole transport layer.

[0137] It can be understood that the solar cell is formal, and the preparation sequence is slightly different, that is, the electron transport layer is prepared first, and then the hole transport layer is prepared, which can be adjusted slightly according to the structure.

[0138] Optionally, the above-mentioned solar cell can further have an electron blocking layer between the electrode layer and the hole transport layer. The material of the electron blocking layer can be a known material.

[0139] Optionally, the above-mentioned solar cell can further have a hole blocking layer between the electrode layer and the electron transport layer. The material of the hole blocking layer can include but is not limited to BCP (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline).

[0140] It can be understood that the interface between adjacent film layers of the photovoltaic structure can or can not have an interface layer according to actual design.

[0141] Another embodiment of the present application provides a preparation method of the above-mentioned solar cell, comprising the following steps:

[0142] Preparation of a photovoltaic structure with a first electrode layer, a light-absorbing layer and a second electrode layer arranged in sequence;

[0143] An insulating layer is arranged on the side of the second electrode layer away from the light-absorbing layer, forming a first main body part of the busbar connected with the second electrode layer and a second main body part of the busbar formed on the side of the insulating layer away from the second electrode layer, to obtain the above-mentioned busbar structure.

[0144] The above-mentioned preparation method can be used to prepare the solar cell, and the specific implementation mode is not limited, such as using a spraying method, a sputtering method, a vapor deposition method, etc., and any means that can be realized by those skilled in the art can be used.

[0145] In any embodiment of the present application, at least one of the insulating layer and the busbar is formed by a vapor deposition method. Thus, a high-throughput deposition technology compatible with the existing process is used, the thickness of the insulating layer and the busbar is controlled in a small range through deposition, and the damage to the perovskite photovoltaic module is small during deposition, so that the preparation of the busbar structure is compatible with the production rhythm.

[0146] Further, the second electrode layer, the insulating layer and the busbar are formed by a vapor deposition method. In this way, the second electrode layer, the insulating layer and the busbar are all formed by the vapor deposition method, so that the deposition of the second electrode layer, the insulating layer and the busbar can be sequentially completed in the same deposition device in the production process, without the need for transferring and other steps, and the process continuity and stability are good.

[0147] Further, the light-absorbing layer is a perovskite light-absorbing layer, and the deposition technology used for the preparation of the back electrode of the perovskite battery is the same, without the need for transferring and other steps, and the deposition of the back electrode and the busbar structure can be completed in the same deposition device.

[0148] Further, the vapor deposition method includes at least one of a chemical vapor deposition method, a physical vapor deposition method and a plasma vapor deposition method. Further, the chemical vapor deposition method is a method of generating a thin film on a substrate surface by a chemical reaction using one or more gaseous compounds or elements containing film elements, including hot CVD, plasma chemical vapor deposition (PCVD) and laser CVD (LCVD) and the like. The physical vapor deposition method refers to a technology of depositing a thin film with certain special functions on a substrate surface by vaporizing a material source (solid or liquid) surface into gaseous atoms or molecules or partially ionizing into ions under vacuum conditions, and through a low-pressure gas (or plasma) process, including vacuum evaporation, sputtering coating, arc plasma coating, ion coating and molecular beam epitaxy and the like.

[0149] An embodiment of the present application also provides a photovoltaic module, which includes the above-mentioned solar cell.

[0150] The above-mentioned solar cell has high light conversion efficiency and good stability, and can improve the efficiency of the photovoltaic module.

[0151] In the above-mentioned photovoltaic module, one or more of the above-mentioned solar cells are included, which can be selected according to specific application scenarios. Further, the above-mentioned photovoltaic module includes a plurality of the above-mentioned solar cells, which are connected in series or in parallel to form a cell sheet. Further, the above-mentioned photovoltaic module can also include a stacked cell, which includes one or more of the above-mentioned solar cells. The stacked cell includes but is not limited to a crystalline silicon / perovskite stacked cell, a full perovskite stacked cell, a copper indium gallium selenide thin film cell / perovskite stacked cell and the like.

[0152] In some embodiments, the above-mentioned photovoltaic module further includes a photovoltaic glass layer, an adhesive layer and a back plate.

[0153] The two surfaces of the cell sheet are respectively provided with the adhesive layers, the surface away from the cell sheet in one of the adhesive layers is provided with the back plate, and the surface away from the cell sheet in the other adhesive layer is provided with the photovoltaic glass layer.

[0154] The photovoltaic glass layer and the back plate are used for protecting the solar cell, and have the functions of sealing, insulation and waterproofing; the adhesive layer plays a role of bonding the photovoltaic glass layer and the solar cell and bonding the back plate and the solar cell.

[0155] Optionally, the material of the photovoltaic glass layer is tempered glass, the material of the back plate is TPT (polyvinyl fluoride) or TPE (thermoplastic elastomer), and the material of the adhesive layer is EVA (polyethylene-vinyl acetate copolymer).

[0156] Further, the photovoltaic module further comprises a junction box and a frame. Further, the outgoing end of the busbar of the solar cell is connected with the junction box.

[0157] The junction box is used for protecting the power generation system of the entire photovoltaic module, and is equivalent to a current transfer station. When a short circuit occurs in the solar cell, the junction box can automatically disconnect the short-circuited cell string.

[0158] The frame can play a role of supporting and protecting the entire photovoltaic module, and the frame can be made of aluminum alloy, which has excellent strength and corrosion resistance.

[0159] Further, the connection between the frame and other parts of the photovoltaic module is bonded and sealed by silicone. The photovoltaic module can convert solar energy into electric energy, which can be stored in a storage battery or used to drive a load.

[0160] In some embodiments, the photovoltaic module is a solar cell panel.

[0161] An embodiment of the present application further provides a photovoltaic system comprising the photovoltaic module.

[0162] The photovoltaic system utilizes the photovoltaic effect of the solar cell in the photovoltaic module to directly convert solar radiation energy into electric energy, and has high efficiency. Further, the photovoltaic system is a photovoltaic power generation system.

[0163] The photovoltaic module is a core part of the photovoltaic power generation system. In the photovoltaic system, one or more photovoltaic modules are included, which can be selected according to specific application scenarios. Further, when a plurality of photovoltaic modules are included in the photovoltaic system, the plurality of photovoltaic modules form a photovoltaic array.

[0164] The photovoltaic system can be an independent photovoltaic power generation system or a grid-connected photovoltaic power generation system.

[0165] The stand-alone photovoltaic power generation system includes a photovoltaic array, a battery pack, a charge controller, a power electronic converter (inverter), a load, etc. Its working principle is that solar radiation energy is first converted into electric energy by the photovoltaic array, and then converted by the power electronic converter to supply power to the load, while the excess electric energy is stored in the energy storage device in the form of chemical energy through the charge controller. Thus, when the sunlight is insufficient, the energy stored in the battery can be converted into AC 220V, 50Hz electric energy through the power electronic inverter, filtering and power transformer to supply the AC load.

[0166] The grid-connected photovoltaic power generation system includes a photovoltaic array, a high-frequency DC / DC booster circuit, a power electronic converter (inverter) and system monitoring. Its working principle is that solar radiation energy is converted by the photovoltaic array, and then converted into high-voltage DC power through the high-frequency DC conversion, and then converted into sinusoidal AC current with the same frequency and voltage as the grid through the power electronic inverter.

[0167] The above two photovoltaic power generation systems have their own characteristics, and can be selected according to specific application scenarios.

[0168] An embodiment of the present application provides a power utilization device, which includes the above-mentioned solar cell or the above-mentioned photovoltaic module.

[0169] In some embodiments, the above-mentioned solar cell or photovoltaic module can be used as a power supply of the power utilization device, and can also be used as an energy storage unit of the power utilization device.

[0170] Further, the above-mentioned power utilization device can include a mobile device such as a mobile phone, a notebook computer, etc., an electric vehicle, an electric train, a ship and a satellite, etc., but is not limited thereto.

[0171] FIG. 3 is a power utilization device as an example. The power utilization device 2 is a pure electric vehicle, a hybrid electric vehicle, or a plug-in hybrid electric vehicle, etc.

[0172] In order to make the technical problems, technical solutions and beneficial effects solved by the present application clearer, the present application will be further described in detail below in combination with embodiments and drawings. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. The following description of at least one exemplary embodiment is merely illustrative in nature and in no way limits the present application and its applications. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative labor fall within the scope of the present application.

[0173] Unless otherwise specified in the embodiments, the techniques or conditions are carried out according to the techniques or conditions described in the literature in the art or according to the product instructions. Unless otherwise specified, the reagents or instruments used are conventional products that can be obtained from the market.

[0174] I. Device preparation

[0175] Comparative Example 1

[0176] The structure of a perovskite cell is as follows:

[0177] Step 1): Cleaning of the transparent conductive substrate.

[0178] A glass substrate (FTO) with a fluorine-doped tin oxide conductive layer was etched with zinc powder and a 6 mol / L hydrochloric acid solution for 15 seconds, and then ultrasonic cleaned with deionized water, ethanol, acetone and isopropanol, respectively. After drying, the substrate was subjected to ultraviolet ozone treatment (ultraviolet light wavelength of 185 nm, power of 2250 W, and irradiation time of 20 minutes) to obtain a clean fluorine-doped tin oxide conductive layer, i.e., a transparent conductive substrate.

[0179] Step 2): P1 laser scribing was performed on the transparent conductive substrate with a width of 30 μm.

[0180] Step 3): Preparation of the electron transport layer.

[0181] Step S3-1: A tin oxide nanoparticle water dispersion (volume ratio of tin oxide nanoparticles to water of 1:9.5) was coated on the fluorine-doped indium oxide conductive layer to prepare an electron transport layer with a thickness of about 20 nm, and the average particle size of the tin oxide nanoparticles was about 2 nm.

[0182] Step S3-2: The substrate was transferred to a hot plate and subjected to annealing treatment at a temperature of 150 °C for 30 min, and then subjected to ultraviolet ozone treatment with ultraviolet light wavelength of 185 nm, power of 2250 W, and irradiation time of 20 min to obtain an electron transport layer with a thickness of about 20 nm.

[0183] Step 4): Preparation of the interface modification layer: After the substrate was cooled, a deionized water solution (1.5 mg / mL) of KCl was coated on the electron transport layer, and annealing treatment was performed at 150 °C for 30 min to obtain an interface modification layer with a thickness of 3 nm.

[0184] Step 5): Preparation of the perovskite light-absorbing layer.

[0185] Step 5-1: The substrate with the electron transport layer was transferred to an inert gas-filled glove box;

[0186] Step 5-2: A lead iodide solution with a concentration of 1.5 mol / L was prepared using a mixture of DMF (N,N-dimethylformamide) and DMSO (dimethyl sulfoxide) as the solvent (volume ratio of DMF to DMSO of 9:1), and coated on the electron transport layer to form a lead iodide film with a thickness of about 600 nm;

[0187] Step 5-3: An isopropanol mixed solution containing FAI (formamidinium iodide), MAI (methylammonium iodide) and MACI (methylammonium chloride) (the feeding ratio of FAI, MAI, MACI and isopropanol is 90 mg:9 mg:9 mg:1 mL) was prepared and coated on a lead iodide film to obtain an intermediate phase film with a thickness of about 900 nm;

[0188] Step 5-4: The substrate with the intermediate phase film was annealed at 150°C for 15 min in an air environment to obtain a perovskite light-absorbing layer with a thickness of about 850 nm.

[0189] Step 6): Preparation of a hole transport layer:

[0190] 72.3 mg of 2,2',7,7'-tetra[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene (spiro-OMeTAD), 4-tert-butylpyridine (tBP) and 1 mL of chlorobenzene were prepared into a hole transport layer solution and coated on the perovskite light-absorbing layer to form a hole transport layer with a thickness of about 200 nm and a coverage of 100%.

[0191] Step 7): P2 laser scribing was performed on the above-mentioned semi-finished battery, the P2 laser scribing extending from the hole transport layer to the lower surface of the electron transport layer with a width of 50 μm and a P2-P1 interval of 20 μm.

[0192] Step 8): Preparation of a back electrode: A 100 nm thick gold electrode was deposited on the above-mentioned semi-finished battery at a rate of 0.1 A / s using a vacuum thermal evaporation coating instrument.

[0193] Step 9): P3 laser scribing was performed on the above-mentioned semi-finished battery to obtain a perovskite solar cell without a busbar structure, which was divided into multiple sub-cells by P3 scribing. The P3 laser scribing extended from the back electrode to the upper surface of the transparent conductive substrate. At the same time, the perovskite structure at the edge was edge cleaned, leaving a 2 cm edge.

[0194] Step 10): Please refer to FIG. 4, an insulating tape 31 (polymethyl methacrylate) with a thickness of 1 mm was arranged on the upper surface of the back electrode, and the length direction of the insulating tape 31 was arranged perpendicular to the length direction of the sub-back electrode (i.e. the second electrode layer) separated by P3 laser scribing, wherein the width of the P3 scribing is 15 μm and the P3-P2 interval is 20 μm.

[0195] ​Step 11): Cover the two end sub-back electrodes separated by the P3 laser scribing with the conductive tape 32 having a thickness of 1.5 mm to connect the positive and negative electrodes of the perovskite solar cell, respectively. Specifically, one end of the conductive tape 32 is located on the insulating tape 31, and the other end is located on the sub-back electrode (i.e., connected to the sub-back electrode) and extends along the sub-back electrode. The same conductive tape 32 is used to cover the end of the conductive tape on the insulating tape, so that the overlapping part 322 of the conductive tape is formed at the connection, and the two conductive tapes 32 extend along the insulating tape 31 with a spacing, and the ends of the two conductive tapes 32 serve as two lead-out ends 321.

[0196] Step 12): Weld the outer flow member at the two lead-out ends 321 (i.e., corresponding to the openings of the cover glass) to connect the junction box.

[0197] Comparative Examples 2-6

[0198] The same as Comparative Example 1, except that Step 10) is as follows:

[0199] Step 10): In Comparative Example 1, the position of the insulating tape on the back electrode is replaced by: depositing a BCP nano-insulating layer by vacuum evaporation and covering a mask plate, with thicknesses of 1 nm, 2 nm, 5 nm, 10 nm, and 20 nm, respectively. The subsequent steps 11) and 12) are the same as Comparative Example 1.

[0200] Photoelectric conversion efficiency performance test: Under the irradiation of AM1.5 simulated sunlight with an intensity of 100 mW / cm 2 , the current-voltage curve of the perovskite solar cell is measured, and the data is collected by Keithly 2400 digital source meter to obtain the performance parameters of Pout, Popt, Vmpp, Jmpp, Voc, and Jsc.

[0201] Photoelectric conversion efficiency is calculated as follows:

[0202] PCE = Pout / Popt

[0203] = Voc x Jsc x (Vmpp x Jmpp) / (Voc x Jsc) / Popt

[0204] = Voc x Jsc x FF / Popt

[0205] Where Pout, Popt, Vmpp, Jmpp, Voc, and Jsc are the output power of the battery, the incident light power, the maximum power point voltage of the battery, the maximum power point current of the battery, the open circuit voltage, and the short circuit current, respectively. FF is the fill factor.

[0206] Geometric fill factor: percentage of effective cell area to cell module area.

[0207] The perovskite solar cells without lamination obtained in each of the above comparative examples were tested according to the above process, and the obtained photoelectric conversion efficiency, and the specific results of PCE before lamination and packaging are shown in Table 1.

[0208] The perovskite solar cells of each of the above comparative examples were laminated and packaged using adhesive film and glass. The photoelectric conversion efficiency performance of the devices after lamination and packaging was tested using the above test process, and the specific results of PCE after lamination and packaging are shown in Table 1.

[0209] PCE attenuation after lamination = (PCE after lamination and packaging - PCE before lamination and packaging) * 100% / PCE before lamination and packaging.

[0210] Table 1

[0211] From the above comparative examples, it can be seen that when the thickness of the insulating layer is less than 5 nm, it may cause electrical leakage, so the PCE before lamination and packaging is lower. Therefore, controlling the thickness of the insulating layer to be ≥ 5 nm can make the PCE before lamination and packaging in a higher range.

[0212] From the comparison of PCE before and after lamination and packaging of the above comparative examples, it can be seen that since each of the comparative examples uses a millimeter thickness level of conductive adhesive tape, the PCE attenuation after lamination and packaging is relatively large compared to before lamination.

[0213] Examples 1-13

[0214] The same as Comparative Example 1, except that steps 10) and 11) are different, please refer to FIG. 5, and the details are as follows:

[0215] The perovskite solar cell obtained in step 9) of Comparative Example 1 was subjected to the following process, as shown in steps 10)-12) in FIG. 5.

[0216] Step 10): The position of the insulating adhesive tape on the back electrode in Comparative Example 1 was replaced by: depositing and preparing an insulating layer 17 of BCP nanometer thickness on the surface of the back electrode by vacuum evaporation and covering the mask plate, and the thickness was 10 nm, please refer to FIG. 1 and FIG. 2;

[0217] Step 11): The position of the conductive tape on the back electrode in Comparative Example 1 is replaced by: a nanometer-thick copper material busbar 18 is prepared on the perovskite photovoltaic positive and negative electrodes and the nano-insulating layer by vacuum evaporation and covering the mask plate, the thicknesses are 10 nm, 50 nm, 100 nm, 200 nm, 500 nm, 980 nm, 10 μm, 50 μm, 100 μm, 250 μm, 500 μm, 700 μm, respectively, to realize the busbar of the perovskite solar cell and the external circuit, please refer to FIG. 1 and FIG. 2.

[0218] Step 12): The copper tape is welded at the lead-out end of the busbar as an external busbar to connect the junction box.

[0219] The perovskite solar cells obtained by testing the above-mentioned examples according to the above process are not laminated, and the photoelectric conversion efficiency obtained is shown in Table 2.

[0220] The perovskite solar cells of the above-mentioned examples are laminated and packaged with TPO film and glass. The photoelectric conversion efficiency performance of the devices after laminated and packaged is tested by using the above-mentioned test process, and the specific results of PCE after laminated and packaged are shown in Table 2.

[0221] PCE attenuation after lamination = (PCE after lamination and packaging - PCE before lamination and packaging) * 100% / PCE before lamination and packaging.

[0222] Table 2

[0223] From the above examples, it can be seen that the thickness of the insulating layer is controlled to be ≥5 nm, and the total thickness of the insulating layer and the first main body part of the busbar is <500 μm, further ≤360 μm, which has a smaller attenuation after lamination than each comparative example. Further, when the thickness of the BCP nano-insulating layer is 10 nm, and the thickness of the copper nano-busbar is in the range of 10 nm-360 μm, the PCE increases with the increase of the thickness, and then remains basically unchanged, and then decreases slightly. When the thickness of the copper nano-busbar reaches 100 nm, the PCE before lamination no longer increases, therefore, the examples of the BCP nano-insulating layer with a thickness of 10 nm and the copper nano-busbar with a thickness of 100 nm-980 nm have better performance, and obtain lower PCE attenuation after lamination and higher photoelectric performance stability after packaging at a lower thickness.

[0224] Examples 14-17

[0225] The same as Example 4, except that the thickness of the nano-insulating layer is 5 nm, 10 nm, 20 nm, 30 nm, and 50 nm, respectively, and the light conversion efficiency of the device before and after lamination is shown in Table 3 below. It can be seen that when the thickness of the nano-insulating layer is 5-50 nm, the light conversion efficiency of the device before and after lamination can be significantly reduced.

[0226] Table 3

[0227] Comparative Example 7

[0228] The remaining steps are the same as Comparative Example 1, but the edge cleaning method in step 9) is to remove two terminal cells at both ends.

[0229] Step 10) An insulating tape 31 (polymethyl methacrylate) with a thickness of 1 mm is arranged on the upper surface of the back electrode, and the length direction of the insulating tape 31 is perpendicular to the length direction of the sub-back electrode (i.e. the second electrode layer) separated by the P3 laser scribe, wherein the width of the P3 scribe is 15 μm, and the interval between P3 and P2 is 20 μm.

[0230] Step 11) Two conductive tapes with a thickness of 1.5 mm are respectively placed at the positions of the removed sub-cells in step 9) to communicate with the sub-back electrodes of the adjacent sub-cells, so as to be connected with the positive and negative electrodes of the perovskite solar cell; specifically, one end of the conductive tape is located on the insulating tape and extends along the insulating tape, and the two conductive tapes extend oppositely along the insulating tape with a spacing, and the end portions of the two conductive tapes serve as two lead-out terminals. The photoelectric conversion efficiency PCE and the geometric fill factor FF of Example 4 and Comparative Example 7 are shown in Table 3 below, and the test method is the same as above. It can be seen that although Comparative Example 7 reduces the stress during lamination packaging by removing the terminal cells to ensure that the busbar part does not need to be placed on the back electrode, the operation of removing the terminal cells will significantly reduce the effective area of the solar cell, i.e. the geometric fill factor is significantly reduced.

[0231] Table 4

[0232] The stability of the devices after lamination packaging of Example 4 and Comparative Example 1 was tested. The steps of the stability test: the above-mentioned cells were aged for 1000 hours under the irradiation of AM1.5 simulated sunlight with an intensity of 100 mW / cm 2

[0233] The PCE after aging = (PCE after lamination packaging - PCE after aging) * 100% / PCE after lamination packaging. ​

[0234] Table 5

[0235] As can be seen from the comparison between Comparative Example 1 and Example 4, the perovskite light-absorbing layer in the perovskite solar cell of Comparative Example 1 using the millimeter-thick conductive tape and insulating tape solution appeared to be significantly yellowed after lamination and aging treatment, and the PCE decay after aging was more than 40%. The perovskite light-absorbing layer in the perovskite solar cell of Example 4 did not appear to be visibly yellowed, and the PCE decay after aging was 12%.

[0236] As can be seen from Table 4 and Table 5, the busbar structure of the application uses a nanoscale-thickness insulating layer and busbar, which not only helps to reduce stress concentration during lamination and packaging, and improve the stability of the photoelectric performance after packaging, but also does not need to remove the two-terminal cell, and can obtain a higher geometric fill factor, and the PCE decay after aging is lower, indicating that the aging speed of the perovskite light-absorbing layer is reduced and the stability is improved.

[0237] As can be seen, the edge cleaning process is not required for the busbar design of the above-mentioned solar cell 1 of the application, which improves the actual output power and effective active area of the solar cell 1, and further improves the photoelectric conversion efficiency and geometric fill factor of the cell, and avoids the complex patterning process of the solar cell 1 substrate.

[0238] It should be noted that the application is not limited to the above-mentioned embodiments. The above-mentioned embodiments are only examples, and embodiments having the same technical idea and substantially the same function and effect within the scope of the technical solutions of the application are all included in the technical scope of the application. In addition, within the scope of the main idea of the application, various modifications of the embodiments that can be thought of by those skilled in the art, and other ways constructed by combining part of the constituent elements in the embodiments are also included in the scope of the application.

Claims

1. A solar cell comprising: The photovoltaic structure comprises a first electrode layer, a light absorbing layer and a second electrode layer stacked in sequence; A bus structure comprising a busbar and an insulating layer, wherein the insulating layer is located on a side of the second electrode layer away from the light absorbing layer, the busbar comprising a first main portion and a second main portion connected in sequence, the first main portion being connected to the second electrode layer, and the second main portion being located on a side of the insulating layer away from the second electrode layer; The thickness of the insulating layer is ≥5 nm, and the sum of the thickness of the second main body and the insulating layer is less than 500 μm.

2. The solar cell according to claim 1, wherein The thickness of the first main body portion is less than or equal to the sum of the thicknesses of the second main body portion and the insulating layer.

3. The solar cell according to any one of claims 1 to 2, wherein: The solar cell satisfies one or more of the following conditions: (1) The sum of the thickness of the second main body and the insulating layer is ≤360 μm; (2) The thickness of the second main body is ≥10 nm.

4. The solar cell according to any one of claims 1 to 3, wherein: The sum of the thickness of the second main body and the insulating layer is ≤110 μm.

5. The solar cell according to claim 4, wherein The solar cell satisfies one or more of the following conditions: (1) The thickness of the insulating layer is 5 nm to 50 nm; (2) The thickness of the first main body portion is 10 nm to 100 μm; (3) The thickness of the second main body portion is 10 nm to 100 μm.

6. The solar cell according to claim 5, wherein The solar cell satisfies one or more of the following conditions: (1) The thickness of the insulating layer is 10 nm to 50 nm; (2) The thickness of the first main body is 10 nm to 10 μm; (3) The thickness of the second main body portion is 10 nm to 10 μm.

7. The solar cell according to claim 6, wherein The solar cell satisfies one or more of the following conditions: (1) The thickness of the first main body is 50 nm to 980 nm; (2) The thickness of the second main body portion is 50 nm to 980 nm.

8. The solar cell according to claim 7, wherein The solar cell satisfies one or more of the following conditions: (1) The thickness of the first main body is 100 nm to 550 nm; (2) The thickness of the second main body portion is 100 nm to 500 nm.

9. The solar cell according to any one of claims 1 to 8, wherein: The first main body portion and the second main body portion have the same thickness.

10. The solar cell according to any one of claims 1 to 9, wherein: The busbars include two busbars, and the first main bodies of the two busbars are respectively connected to the positive electrode and the negative electrode of the second electrode layer.

11. The solar cell according to any one of claims 1 to 10, wherein: Taking the stacking direction of the photovoltaic structure as a first direction, the dimension of the insulating layer in a width direction perpendicular to the first direction is 1 mm to 10 cm.

12. The solar cell according to any one of claims 1 to 11, wherein: Along the stacking direction of the photovoltaic structure, the projection of the second main body portion is located within the projection of the insulating layer.

13. The solar cell according to any one of claims 1 to 12, wherein: An extension direction of the second main body portion is perpendicular to an extension direction of the first main body portion.

14. The solar cell according to any one of claims 1 to 13, wherein: The material of the busbar includes a conductivity of ≥9.5×10 5 Sm -1 conductive material.

15. The solar cell according to claim 15, wherein The conductive material includes at least one of a metal material, a carbon material and a conductive metal oxide.

16. The solar cell according to any one of claims 1 to 15, wherein: The material of the insulating layer includes at least one of an inorganic insulating material and an organic insulating material.

17. The solar cell according to claim 16, wherein The solar cell satisfies one or more of the following conditions: (1) The inorganic insulating material includes at least one of a metal halide and a metal oxide; (2) The organic insulating material includes at least one of bathocuproin, poly[9,9-dioctylfluorene-9,9-bis(N,N-dimethylpropyl)fluorene], fullerene and its derivatives, and polymethyl methacrylate.

18. The solar cell according to claim 17, wherein The metal cations in the metal halide and the metal oxide include at least one of silver ions, copper ions, aluminum ions, cobalt ions, titanium ions, tungsten ions, tantalum ions, and lithium ions.

19. The solar cell according to any one of claims 1 to 18, wherein The light absorption layer includes at least one of a perovskite light absorption layer, a dye-sensitized light absorption layer, a thin film silicon light absorption layer and an organic light absorption layer.

20. The solar cell according to any one of claims 1 to 19, wherein The solar cell further includes an encapsulation layer and a substrate. The substrate is disposed on a side of the first electrode layer of the photovoltaic structure away from the light absorbing layer. The encapsulation layer and the substrate cooperate to encapsulate the photovoltaic structure and the busbar structure.

21. The solar cell according to any one of claims 1 to 20, wherein The solar cell further includes an external outflow piece and a junction box. The external outflow piece is connected to the second main body portion, and the junction box is connected to the external outflow piece, for leading the current of the solar cell out of the photovoltaic module.

22. A method for preparing a solar cell according to any one of claims 1 to 21, wherein: The steps include: Prepare a photovoltaic structure comprising a first electrode layer, a light absorbing layer, and a second electrode layer stacked in sequence; An insulating layer is provided on a side of the second electrode layer away from the light absorbing layer to form a first main body of the busbar connected to the second electrode layer and a second main body of the busbar is formed on a side of the insulating layer away from the second electrode layer.

23. The method for preparing a solar cell according to claim 22, wherein: At least one of the insulating layer and the current bus is formed by a vapor deposition method.

24. The method for preparing a solar cell according to claim 23, wherein: The second electrode layer, the insulating layer and the bus bar are formed in sequence by using a vapor deposition method.

25. The method for preparing a solar cell according to claim 23 or 24, wherein: The vapor deposition method includes at least one of chemical vapor deposition and physical vapor deposition.

26. A photovoltaic module, wherein: Comprising the solar cell according to any one of claims 1 to 21.

27. An electrical device, wherein: The method comprises at least one selected from the group consisting of the solar cell according to any one of claims 1 to 21 and the photovoltaic module according to claim 26.

28. A power generation device, wherein: The method comprises at least one selected from the group consisting of the solar cell according to any one of claims 1 to 21 and the photovoltaic module according to claim 26.

Images