Thin-film transistor plasma display module having isolation structure and plasma display screen

Abstract

A thin-film transistor plasma display module having an isolation structure. Said plasma display module comprises a first substrate (110) and a second substrate (210) disposed opposite thereto. A plasma display cavity is formed between the first substrate (110) and the second substrate (210), which is filled with plasma particles. The surface of the first substrate (110) facing the second substrate (210) is provided with a filter layer (120), and the surface of the second substrate (210) facing the first substrate (110) is provided with a pixel electrode layer (220); an isolation layer (240) is arranged on the surface of the pixel electrode layer (220) facing the first substrate (110), and plasma isolation structures (230) that extend in the direction of the first substrate (110) are arranged on the isolation layer (240). Gap notches (130) are formed on the filter layer (120), and conductive medium layers (140) are arranged on the surfaces of the filter layer (120) and the gap notches (130) that face the second substrate (210); and the ends of the plasma isolation structures (230) that face away from the second substrate (210) are embedded into the gap notches (130). By arranging the gap notches (130) in the filter layer (120) and embedding the upper ends of the plasma isolation structures (230) into said gap notches (130), the present application enhances the overall structural strength of the display screen, reduces the movement of plasma materials, and improves overall compression resistance.

Description

Thin film transistor plasma display module with isolation structure and plasma display screen TECHNICAL FIELD

[0001] The present application relates to the technical field of electronic paper display, in particular to a thin film transistor plasma display module with isolation structure and a plasma display screen. BACKGROUND

[0002] The existing plasma display screen structure is mainly composed of a glass substrate, a filter, an ITO layer and a plasma barrier weir from top to bottom, and a gap is left between the plasma barrier weir and the ITO layer to form a plasma flow passage. The upper and lower cover plates are easily deformed due to external force, and the screen has poor pressure resistance. At the same time, the service life of the existing plasma display screen is related to the refresh life, and improving the refresh life can improve the overall service life of the plasma display screen. Therefore, how to increase the overall structural strength of the screen, reduce the deformation of the upper and lower cover plates, and improve the overall pressure resistance and refresh life of the display screen has become a technical problem to be solved by the technical personnel in the field. SUMMARY

[0003] The present application provides a thin film transistor plasma display module with isolation structure, which can improve the overall pressure resistance and refresh life of the display screen.

[0004] One technical solution of the present application is as follows: a thin film transistor plasma display module with isolation structure, comprising a first substrate and a second substrate arranged opposite to the first substrate, a plasma display cavity is formed between the first substrate and the second substrate, and the plasma display cavity is filled with plasma particles;

[0005] A filter layer is arranged on the surface of the first substrate facing the second substrate, a pixel electrode layer is arranged on the surface of the second substrate facing the first substrate, and an isolation layer is arranged on the surface of the pixel electrode layer facing the first substrate;

[0006] A plasma isolation structure extending towards the first substrate is arranged on the isolation layer, a gap notch is arranged on the filter layer, and a conductive medium layer is arranged on the surfaces of the filter layer and the gap notch facing the second substrate, and one end of the plasma isolation structure away from the second substrate is embedded in the gap notch.

[0007] Further, the filter layer comprises a plurality of color filters arranged at intervals, and the gap notch is arranged between adjacent color filters or inside a single color filter.

[0008] Further, the pixel electrode layer comprises a plurality of pixel electrodes arranged in an array, and when the gap notch is arranged between adjacent color filters, one end of the plasma isolation structure away from the first substrate covers the gap between adjacent pixel electrodes.

[0009] Further, the plasma isolation structure is in a frustum structure.

[0010] Further, when the gap notch is arranged inside a single color filter, a plurality of gap notches are arranged, and the plurality of gap notches are uniformly arranged, and the plasma isolation structure is in a circular frustum structure.

[0011] Further, when the gap notch is arranged between adjacent color filters; the plasma isolation structure is arranged on a connecting edge of the adjacent color filters, and the plasma isolation structure is in a prismatic frustum structure or a circular frustum structure; or the plasma isolation structure is arranged on a connecting corner of the adjacent color filters, and the plasma isolation structure includes 2 to 4 frustum baffles arranged at a same center angle of 90°.

[0012] Further, a support structure is arranged in the plasma display cavity.

[0013] Further, the support structure includes support microspheres, and the support microspheres are tangent to the conductive medium layer and the isolation layer, respectively.

[0014] Further, an end of the plasma isolation structure away from the second substrate is embedded in the gap notch.

[0015] Another technical solution of the present application is as follows: a plasma display screen including the thin film transistor plasma display module with the isolation structure according to any one of the above.

[0016] The present application has the following beneficial effects: the present application embeds the upper end of the plasma isolation structure into the gap notch by arranging the gap notch in the filter layer, thereby increasing the strength of the overall structure of the display screen, reducing the movement of the plasma, and reducing the deformation of the upper and lower cover plates caused by external force, and improving the overall pressure resistance. The present application isolates the pixel electrode from the plasma by arranging the isolation layer, thereby effectively improving the refresh life. BRIEF DESCRIPTION OF DRAWINGS

[0017] Fig. 1 is a schematic diagram of the arrangement of the plasma isolation structure in the first embodiment of the present application.

[0018] Fig. 2 is a sectional view of A-A in Fig. 1.

[0019] Fig. 3 is a schematic diagram of the arrangement of the plasma isolation structure in the second embodiment of the present application.

[0020] Fig. 4 is a schematic diagram of the arrangement of the plasma isolation structure in the third embodiment of the present application.

[0021] Fig. 5 is a schematic diagram of the arrangement of the plasma isolation structure in the fourth embodiment of the present application.

[0022] Fig. 6 is a schematic diagram of the arrangement of the plasma isolation structure in the fifth embodiment of the present application.

[0023] Figure 7 is a schematic diagram of the plasma isolation structure arrangement of the sixth embodiment of the present application.

[0024] Figure 8 is a schematic diagram of the plasma isolation structure arrangement of the seventh embodiment of the present application.

[0025] Figure 9 is a schematic diagram of the plasma isolation structure arrangement of the eighth embodiment of the present application.

[0026] Figure 10 is a schematic diagram of the plasma isolation structure arrangement of the ninth embodiment of the present application.

[0027] Figure 11 is a sectional view of A-A in Figure 10. DETAILED DESCRIPTION

[0028] In order to make the technical personnel better understand the present application, the technical solutions in the embodiments of the present application will be described clearly and completely below in conjunction with the accompanying drawings in the embodiments of the present application. The described embodiments are only a part of the embodiments of the present application, but not all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by the ordinary technical personnel in the art without creative labor should belong to the scope of protection of the present application.

[0029] In one technical solution of the present application, Figures 1 and 2 are schematic diagrams of one embodiment of a thin film transistor plasma display module with an isolation structure according to the present application. As shown in Figures 1 and 2, the present application specifically includes: a first substrate 110 and a second substrate 210 arranged opposite to the first substrate 110, a plasma display cavity is formed between the first substrate 110 and the second substrate 210, and the plasma display cavity is filled with plasma particles. The plasma particles include white particles 310 and black particles 320. As shown in Figure 2, the color of the plasma black particles is dark, and the color of the plasma white particles is light. It should be understood that the plasma particles 320 can also include two-color, three-color or multi-color pigment particles, which can be selected as needed, and are not limited here. Among them, the first substrate and the second substrate can adopt a glass substrate, and the second substrate can adopt a TFT (Thin Film Transistor) glass substrate.

[0030] The surface of the first substrate 110 facing the second substrate 210 is provided with a filter layer 120, the surface of the second substrate 210 facing the first substrate 110 is provided with a pixel electrode layer 220, and the surface of the pixel electrode layer 220 facing the first substrate 110 is provided with an isolation layer 240. The isolation layer is used to isolate the pixel electrode layer from the plasma display cavity, to prevent the pixel electrode from directly contacting the plasma, which can greatly improve the refresh life. At the same time, the isolation layer can make the pixel electrode layer more flat, so that the plasma isolation structure can be better set, and the isolation layer can adopt a PI (Polyimide) material.

[0031] The isolation layer 240 is provided with a plasma isolation structure 230 extending towards the first substrate 110, the light filtering layer 120 is provided with a gap notch 130, the light filtering layer 120 and the gap notch 130 are both provided with a conductive medium layer 140 facing the surface of the second substrate 210, and the end of the plasma isolation structure 230 away from the second substrate 210 is embedded in the gap notch 130. More specifically, the end of the plasma isolation structure 230 away from the second substrate 210 is embedded in the gap notch 130 and abuts against the conductive medium layer 140 in the gap notch 130. The plasma isolation structure is embedded in the gap notch 130 of the light filtering layer, so that the upper and lower substrates are supported, the strength of the overall structure of the display screen is increased, the movement of the plasma is reduced, the deformation of the upper and lower covers caused by external force is reduced, and the overall pressure resistance is improved. In the actual manufacturing process, the plasma isolation structure 230 can be formed on the first substrate 110 first and then connected with the second substrate 210, or formed on the second substrate 210 first and then connected with the first substrate 110, which is not limited here.

[0032] The light filtering layer 120 includes a plurality of color filters arranged at intervals, and the color filters include but are not limited to RGB three-color filters. The gap notch 130 is arranged between adjacent color filters or inside a single color filter. The plasma isolation structure 230 has a frustum structure. The pixel electrode layer includes a plurality of pixel electrodes 221 arranged in an array.

[0033] When the gap notch 130 is arranged inside a single color filter, a plurality of gap notches 130 are arranged uniformly, and the plasma isolation structure 230 has a circular frustum structure. When the gap notch 130 is arranged between adjacent color filters, the plasma isolation structure 230 is arranged on the connecting edge of adjacent color filters, and the plasma isolation structure 230 has a prismatic frustum structure or a circular frustum structure, or the plasma isolation structure 230 is arranged on the connecting corner of adjacent color filters, and the plasma isolation structure 230 includes 2-4 frustum baffles 231 arranged at the same center angle of 90°.

[0034] A support structure is arranged in the plasma display cavity 300, which is not shown in the figure. Specifically, the support structure can be a support microsphere, and the support microsphere is tangent to the conductive medium layer 140 and the isolation layer 240, respectively. The support microsphere mainly plays a supporting and fixing role, improves the pressure resistance of the screen, so that the image will not be blurred and deformed when the screen is pressed during display, and improves the stability of the displayed image.

[0035] In the embodiment one of FIG. 1 and FIG. 2, the gap notch 130 is arranged on the connecting edge of the adjacent color filter, specifically, one gap notch 130 is arranged on each connecting edge, that is, one plasma isolation structure is arranged on each connecting edge, and the gap notch 130 is located at the center of each connecting edge. The end of the plasma isolation structure 230 away from the first substrate 110 covers the gap between the adjacent pixel electrodes 221. As shown in the plasma isolation structure arrangement diagram of FIG. 1 and the cross-sectional view of FIG. 2, the plasma isolation structure in this embodiment is a prism structure.

[0036] In the embodiment two of FIG. 3, different from the embodiment one, a plurality of plasma isolation structures are arranged on each connecting edge, specifically, three plasma isolation structures are arranged on each connecting edge, and the plasma isolation structures on each connecting edge are symmetrically arranged with the diagonal as the axis.

[0037] In the embodiment three of FIG. 4, different from the embodiment two, the plurality of plasma isolation structures on each connecting edge are staggered.

[0038] In the embodiment four of FIG. 5, different from the embodiment one, the plasma isolation structure is a circular truncated cone structure.

[0039] In the embodiment five of FIG. 6, different from the embodiment two, the plasma isolation structure is a circular truncated cone structure.

[0040] In the embodiment six of FIG. 7, the gap notch 130 is arranged on the connecting corner of the adjacent color filter, and the plasma isolation structure is a circular truncated cone structure.

[0041] In the embodiment seven of FIG. 8, different from the embodiment six, the gap notch 130 is arranged on the connecting corner and the connecting edge, and the number of the gap notch 130 arranged on the connecting edge is one, which can be arranged according to the actual situation.

[0042] In the embodiment eight of FIG. 9, different from the embodiment six, the plasma isolation structure specifically includes 2-4 truncated cone baffles 231, and the truncated cone baffles 231 are arranged at the same center angle of 90°. Among them, the plasma isolation structure located on the connecting corner of the four color filters is composed of four truncated cone baffles 231, forming a cross-shaped structure in the top view, the plasma isolation structure located on the connecting corner of the two color filters is composed of three truncated cone baffles 231, forming a T-shaped structure in the top view, and the plasma isolation structure located on the corner of a single color filter is composed of two truncated cone baffles 231, forming an L-shaped structure in the top view.

[0043] In the embodiment nine of FIG. 10 and FIG. 11, the gap notch 130 is arranged in the interior of a single color filter, specifically, five gap notches 130 are arranged, among which four gap notches 130 form a rectangular arrangement, and the other gap notch 130 is located at the center of the rectangle, and the plasma isolation structure is a circular truncated cone structure.

[0044] It should be noted that the plasma isolation structure can be arranged irregularly, and the cross-sectional shape thereof can also be in various shapes, as long as the above structural features are met. It can be understood that other arrangement modes of the plasma isolation structure and the cross-sectional shape of the plasma isolation structure should fall within the protection scope of the present patent.

[0045] Another technical solution of the present application provides a plasma display screen comprising the above-mentioned thin film transistor plasma display module with the isolation structure. As a specific embodiment of the display device, the display device can specifically be an electronic paper display screen of microcapsules or microcups, a bistable reflective liquid crystal display screen, and an LCD liquid crystal display screen. The effects of the display device can be specifically referred to the effects of the display plasma module in the foregoing, which will not be described herein again.

[0046] Finally, it should be noted that the above specific embodiments are only used to illustrate the technical solutions of the present application but not to limit the present application. Although the present application is described in detail with reference to the examples, it should be understood by those skilled in the art that the technical solutions of the present application can be modified or replaced equivalently without departing from the spirit and scope of the technical solutions of the present application, which should be covered in the scope of the claims of the present application.

Claims

1. A thin film transistor plasma display module with an isolation structure, characterized in that: The plasma display cavity is formed between a first substrate (110) and a second substrate (210) arranged opposite to the first substrate (110), and the plasma display cavity is filled with plasma particles; A filter layer (120) is arranged on a surface of the first substrate (110) facing the second substrate (210), a pixel electrode layer (220) is arranged on a surface of the second substrate (210) facing the first substrate (110), and an isolation layer (240) is arranged on a surface of the pixel electrode layer (220) facing the first substrate (110); A plasma isolation structure (230) extending towards the first substrate (110) is arranged on the isolation layer (240), and a gap notch (130) is arranged on the filter layer (120), the filter layer (120) and the gap notch (130) are both provided with a conductive medium layer (140) on a surface thereof facing the second substrate (210), and an end of the plasma isolation structure (230) away from the second substrate (210) is embedded in the gap notch (130).

2. The thin film transistor plasma display module with an isolation structure according to claim 1, wherein The filter layer (120) comprises a plurality of color filters arranged at intervals, and the gap notch (130) is arranged between adjacent color filters or inside a single color filter.

3. The thin film transistor plasma display module with an isolation structure according to claim 2, wherein the barrier rib is formed by a method of forming a barrier rib by a photolithography method. The pixel electrode layer comprises a plurality of pixel electrodes (221) arranged in an array, when the gap notch (130) is arranged between adjacent color filters, an end of the plasma isolation structure (230) away from the first substrate (110) covers a gap between adjacent pixel electrodes (221).

4. The thin film transistor plasma display module with an isolation structure according to claim 2, wherein the barrier rib is formed of a resin material. The plasma isolation structure (230) has a frustum structure.

5. The thin film transistor plasma display module with an isolation structure according to claim 4, wherein the barrier rib is formed by a method of forming a barrier rib by a photolithography method. When the gap notch (130) is arranged inside a single color filter, a plurality of gap notches (130) are arranged, and the plurality of gap notches (130) are arranged uniformly, and the plasma isolation structure (230) has a circular frustum structure.

6. The thin film transistor plasma display module with an isolation structure according to claim 4, wherein the barrier rib is formed by a method of forming a barrier rib by a photolithography method. When the gap notch (130) is arranged between adjacent color filters; The plasma isolation structure (230) is arranged on a connecting edge of adjacent color filters, and the plasma isolation structure (230) has a prismatic frustum structure or a circular frustum structure; Or the plasma isolation structure (230) is arranged on a connecting corner of adjacent color filters, and the plasma isolation structure (230) comprises 2-4 frustum baffles (231) arranged at an angle of 90° with respect to a same center.

7. The thin film transistor plasma display module with an isolation structure according to claim 1, wherein A support structure is arranged in the plasma display cavity.

8. The thin film transistor plasma display module with an isolation structure according to claim 7, wherein The support structure comprises support microspheres, and the support microspheres are tangent to the conductive medium layer (140) and the isolation layer (240), respectively.

9. The thin film transistor plasma display module with an isolation structure according to claim 1, wherein An end of the plasma isolation structure (230) away from the second substrate (210) is in abutment with the conductive medium layer (140).

10. A plasma display panel, characterized by comprising: A thin film transistor plasma display module with the isolation structure is provided. The thin film transistor plasma display module with the isolation structure is provided.

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