Display device, display module, electronic apparatus, and method for manufacturing display device

Abstract

Provided is a novel display device that has excellent convenience, usability and reliability. The display device includes: a first light-emitting device provided with a first unit; a second light-emitting device provided with a second unit; a third light-emitting device provided with a third unit; a first layer; and a second layer. The first layer includes a first opening and a second opening. The first layer fills a gap between the first light-emitting device and the second light-emitting device. The second layer is formed on the second layer. The second layer is in contact with the first unit in the first opening. The second layer is in contact with the second unit in the second opening. The second layer is in contact with the first layer and the third unit.

Description

Display device, display module, electronic device, and method for manufacturing the display device

[0001] One embodiment of the present invention relates to a display device, a display module, an electronic device, or a semiconductor device.

[0002] Note that one embodiment of the present invention is not limited to the above technical field. The technical field of one embodiment of the invention disclosed in this specification relates to an object, a method, or a manufacturing method. Alternatively, one embodiment of the present invention relates to a process, a machine, a manufacture, or a composition of matter. Therefore, more specifically, examples of the technical field of one embodiment of the present invention disclosed in this specification include a data processing device, a semiconductor device, a memory device, a driving method thereof, or a manufacturing method thereof.

[0003] Patent Document 1 discloses a display device in which a counter electrode is provided between a first electrode and a second electrode, and a first light-emitting element has a compound layer containing a first organic material between the first electrode and the counter electrode, and a second light-emitting element has a compound layer containing a second organic material between the counter electrode and the second electrode.

[0004] Furthermore, Patent Document 2 discloses a display device in which each pixel is composed of at least three sub-pixels, and the sub-pixels are stacked.

[0005] Patent Document 1: JP 2003-303683 A, International Publication No. 2010 / 000976

[0006] An object of one embodiment of the present invention is to provide a novel display device with excellent convenience, usefulness, or reliability.An object of one embodiment of the present invention is to provide a novel display module with excellent convenience, usefulness, or reliability.An object of one embodiment of the present invention is to provide a novel electronic device with excellent convenience, usefulness, or reliability.An object of one embodiment of the present invention is to provide a novel display device, a novel display module, a novel electronic device, or a novel semiconductor device.An object of one embodiment of the present invention is to provide a method for manufacturing a novel display device.

[0007] Note that the description of these problems does not preclude the existence of other problems. Note that one embodiment of the present invention does not necessarily solve all of these problems. Note that problems other than these will become apparent from the description of the specification, drawings, claims, etc., and it is possible to extract other problems from the description of the specification, drawings, claims, etc.

[0008] (1) One embodiment of the present invention is a display device including a first light-emitting device including a first unit, a second light-emitting device including a second unit, a third light-emitting device including a third unit, a first layer, and a second layer, wherein the third unit has an area overlapping with the first unit and an area overlapping with the second unit.

[0009] The first layer includes a first opening and a second opening, and the first layer fills the gap between the first light emitting device and the second light emitting device.

[0010] The second layer is formed on the first layer. The second layer contacts the first unit at the first opening. The second layer contacts the second unit at the second opening. The second layer contacts the first layer and the third unit.

[0011] (2) One embodiment of the present invention is a display device including a first light-emitting device, a second light-emitting device, a third light-emitting device, an insulating layer, a first layer, a second layer, and a third layer.

[0012] The first light-emitting device includes a first electrode, a fourth layer, and a first unit, where the first electrode is formed on the insulating layer, the fourth layer is formed on the first electrode, and the fourth layer is sandwiched between the first electrode and the first unit, and the first unit includes a first light-emitting material and has a first side.

[0013] The second light-emitting device includes a second electrode, a fifth layer, and a second unit, the second electrode being formed on the insulating layer. The second electrode is adjacent to the first electrode, and the second electrode is disposed with a first gap between the first electrode and the fifth layer. The fifth layer is formed on the second electrode, and the fifth layer is sandwiched between the second electrode and the second unit. The second unit includes a second light-emitting material, and the second unit is disposed with a second gap between the first unit and the fifth layer, the second gap overlapping the first gap. The second unit also has a second side surface, the second side surface facing the first side surface.

[0014] The third light-emitting device includes a third unit and a sixth layer, the sixth layer being formed on the second gap, and the third unit being sandwiched between the sixth layer and the first gap, the third unit including a third light-emitting material, and the first layer overlapping the first gap.

[0015] The first layer is in contact with the insulating layer, and the first layer is in contact with a first side surface and a second side surface. The first layer also has a first opening and a second opening, the first opening overlapping the first electrode, and the second opening overlapping the second electrode.

[0016] The second layer fills the first gap and the second gap, and the second layer has a third opening and a fourth opening, the third opening overlapping the first opening and the fourth opening overlapping the second opening.

[0017] The third layer is formed on the second layer, and the third layer contacts the second layer and the third unit. The third layer also contacts the first unit at the third opening, and the third layer contacts the second unit at the fourth opening.

[0018] (3) Another embodiment of the present invention is the display device described above, in which the fourth layer has a function of injecting holes into the first unit, the fifth layer has a function of injecting holes into the second unit, and the sixth layer has a function of injecting holes into the third unit. Note that the third layer has a function of injecting electrons into the first unit, the second unit, and the third unit.

[0019] (4) Another embodiment of the present invention is the display device described above, in which the third light-emitting device covers the first light-emitting device, the second light-emitting device, and the second gap.

[0020] (5) Another embodiment of the present invention is the above display device including the seventh layer and the conductive layer.

[0021] The first layer includes a fifth opening and a sixth opening, and the second layer includes a seventh opening and an eighth opening, the seventh opening overlapping the fifth opening and the eighth opening overlapping the sixth opening.

[0022] The third light-emitting device includes a third electrode formed on the insulating layer, the third electrode overlapping the fifth opening, and the third electrode contacting the sixth layer at the fifth opening. The third unit includes a side portion on the second layer.

[0023] The seventh layer is formed on the second layer, the seventh layer contacts the side portion, and the seventh layer contacts the sixth layer.

[0024] The conductive layer is formed on the insulating layer, the conductive layer overlaps the sixth opening, and the conductive layer contacts the third layer at the sixth opening.

[0025] This allows the third light-emitting device to be arranged overlapping the first light-emitting device and the second light-emitting device. Furthermore, the total area of ​​the first light-emitting device, the second light-emitting device, and the third light-emitting device in a top view can be made larger than when the first light-emitting device, the second light-emitting device, and the third light-emitting device are arranged side by side. Furthermore, by arranging the third light-emitting device overlapping the first light-emitting device and the second light-emitting device, the ratio of the total area of ​​the first light-emitting device, the second light-emitting device, and the third light-emitting device in a top view to the area of ​​a region in which a set of pixels is arranged can be, for example, 40% or more and less than 200%, preferably 100% or more and less than 200%. Furthermore, even if the current density flowing through the light-emitting device is reduced, light can be emitted at the same brightness. Furthermore, the reliability of the display device can be improved. As a result, a novel display device with excellent convenience, usefulness, and reliability can be provided.

[0026] (6) Another aspect of the present invention is a display module including the display device described above and at least one of a connector and an integrated circuit.

[0027] (7) Another embodiment of the present invention is an electronic device including the above-described display device and at least one of a battery, a camera, a speaker, and a microphone.

[0028] (8) Another embodiment of the present invention is a method for manufacturing a display device including first to fifth phases.

[0029] In a first phase, a first electrode, a second electrode, a third electrode, and a conductive layer are formed on an insulating layer, with the second electrode disposed with a first gap between it and the first electrode.

[0030] In step 1 of the second phase, a first film is formed on the first electrode, the second electrode, the third electrode and the conductive layer.

[0031] In step 2 of the second phase, a second film is formed on the first film.

[0032] In step 3 of the second phase, a third film is formed on the second film.

[0033] In step 4 of the second phase, a film that will later become the first layer is formed on the third film.

[0034] In step 5 of the second phase, unnecessary portions are removed from the second electrode, the third electrode, and the conductive layer using photolithography, to form a first layer overlapping the first electrode.

[0035] In step 6 of the second phase, the third film, the second film, and the first film are removed from over the second electrode, the third electrode, and the conductive layer using a first layer and etching method to form a second layer, a first unit, and a third layer, where the second layer is sandwiched between the first layer and the first electrode, and the first unit is sandwiched between the second layer and the first electrode.

[0036] In step 1 of the third phase, a fourth film is formed on the first layer, the second electrode, the third electrode and the conductive layer.

[0037] In step 2 of the third phase, a fifth film is formed on the fourth film.

[0038] In step 3 of the third phase, a sixth film is formed on the fifth film.

[0039] In step 4 of the third phase, a film that will later become the fourth layer is formed on the sixth film.

[0040] In step 5 of the third phase, photolithography is used to remove unnecessary portions from the first layer, the third electrode, and the conductive layer, forming a fourth layer that overlaps the second electrode.

[0041] In step 6 of the third phase, a fourth layer and an etching method are used to remove the sixth film, the fifth film, and the fourth film from the first layer, the third electrode, the conductive layer, and the first gap to form a fifth layer, a second unit, a sixth layer, and a second gap, where the fifth layer is sandwiched between the fourth layer and the second electrode, the second unit is sandwiched between the fifth layer and the second electrode, and the second gap overlaps the first gap.

[0042] In step 7 of the third phase, an etching process is used to remove the first and fourth layers.

[0043] In step 1 of the fourth phase, a seventh layer is formed, the seventh layer contacting the insulating layer at the first gap and covering the first unit and the second unit.

[0044] In step 2 of the fourth phase, an eighth layer is formed, the eighth layer filling the first gap and the second gap, the eighth layer having a first opening overlapping the first electrode and a second opening overlapping the second electrode.

[0045] In step 3 of the fourth phase, an eighth layer and an etching method are used to remove the seventh layer and the second layer that overlap the first opening, and to remove the seventh layer and the fifth layer that overlap the second opening.

[0046] In step 1 of the fifth phase, a ninth layer is formed on the first unit, the second unit, the third electrode, the conductive layer, and the eighth layer.

[0047] In step 2 of the fifth phase, a seventh film is formed on the ninth layer.

[0048] In step 3 of the fifth phase, an eighth film is formed on the seventh film.

[0049] In step 4 of the fifth phase, a film that will later become the tenth layer is formed on the eighth film.

[0050] In step 5 of the fifth phase, photolithography is used to remove unnecessary portions from the third electrode, and a tenth layer is formed that overlaps the first electrode, the second electrode, and the conductive layer.

[0051] In step 6 of the fifth phase, the eighth film, the seventh film and the ninth layer are removed from above the third electrode using a tenth layer and etching method to form an eleventh layer, a third unit and a ninth layer.

[0052] In step 7 of the fifth phase, a twelfth layer is formed on the eleventh layer, on the side portions of the third unit and on the side portions of the ninth layer.

[0053] In step 8 of the fifth phase, the twelfth layer is removed using an etching method, leaving behind the side surfaces of the third unit and the portions in contact with the side surfaces of the ninth layer, and the eleventh layer is removed.

[0054] In step 9 of the fifth phase, a ninth film is formed on the third unit, the twelfth layer, and the third electrode.

[0055] In step 10 of the fifth phase, a tenth film is formed on the ninth film.

[0056] In step 11 of the fifth phase, a film that will later become the thirteenth layer is formed on the tenth film.

[0057] In step 12 of the fifth phase, unnecessary portions are removed from the conductive layer using photolithography to form a thirteenth layer that overlaps the first electrode, the second electrode, and the third electrode.

[0058] In step 13 of the fifth phase, a thirteenth layer and etching method is used to remove the tenth and ninth films from above the conductive layer, and a fourteenth and fifteenth layer are formed.

[0059] One embodiment of the present invention can provide a novel display device with excellent convenience, usefulness, or reliability. Alternatively, a novel display module with excellent convenience, usefulness, or reliability can be provided. Alternatively, a novel electronic device with excellent convenience, usefulness, or reliability can be provided. Alternatively, a novel display device, a novel display module, a novel electronic device, or a novel semiconductor device can be provided.

[0060] Note that the description of these effects does not preclude the existence of other effects. Note that one embodiment of the present invention does not necessarily have all of these effects. Note that effects other than these will become apparent from the description in the specification, drawings, claims, etc., and it is possible to extract other effects from the description in the specification, drawings, claims, etc.

[0061] FIGS. 1A to 1C are diagrams illustrating a structure of a display device according to an embodiment. FIGS. 2A and 2B are diagrams illustrating a structure of a display device according to an embodiment. FIGS. 3A and 3B are diagrams illustrating a structure of a display device according to an embodiment. FIG. 4 is a diagram illustrating a structure of a display device according to an embodiment. FIG. 5 is a diagram illustrating a method for manufacturing a display device according to an embodiment. FIG. 6 is a diagram illustrating a method for manufacturing a display device according to an embodiment. FIG. 7 is a diagram illustrating a method for manufacturing a display device according to an embodiment. FIG. 8 is a diagram illustrating a method for manufacturing a display device according to an embodiment. FIG. 9 is a diagram illustrating a method for manufacturing a display device according to an embodiment. FIG. 10 is a diagram illustrating a method for manufacturing a display device according to an embodiment. FIG. 11 is a diagram illustrating a method for manufacturing a display device according to an embodiment. FIG. 12 is a diagram illustrating a method for manufacturing a display device according to an embodiment. FIG. 13 is a diagram illustrating a method for manufacturing a display device according to an embodiment. FIG. 14 is a diagram illustrating a method for manufacturing a display device according to an embodiment. FIG. 15 is a diagram illustrating a method for manufacturing a display device according to an embodiment. FIG. 16 is a diagram illustrating a method for manufacturing a display device according to an embodiment. FIG. 17 is a diagram illustrating a method for manufacturing a display device according to an embodiment. FIG. 18 is a diagram illustrating a method for manufacturing a display device according to an embodiment. FIG. 19 is a diagram illustrating a method for manufacturing a display device according to an embodiment. FIG. 20 is a diagram illustrating a method for manufacturing a display device according to an embodiment. FIG. 21 is a diagram illustrating a method for manufacturing a display device according to an embodiment. FIG. 22 is a diagram illustrating a method for manufacturing a display device according to an embodiment. FIG. 23 is a diagram illustrating a method for manufacturing a display device according to an embodiment. FIGS. 24A and 24B are diagrams illustrating a structure of a display module according to an embodiment. FIGS. 25A and 25B are diagrams illustrating a structure of a display module according to an embodiment. FIGS. 26A to 26E are diagrams illustrating a structure of a display device according to an embodiment. FIG. 27 is a diagram illustrating a structure of a display device according to an embodiment. FIG. 28 is a diagram illustrating a structure of a display device according to an embodiment. FIG. 29 is a diagram illustrating a structure of a display device according to an embodiment.FIG. 30 is a diagram illustrating a configuration of a display device according to an embodiment. FIG. 31 is a diagram illustrating a configuration of a display device according to an embodiment. FIG. 32 is a diagram illustrating a configuration of a display device according to an embodiment. FIG. 33 is a diagram illustrating a configuration of a display device according to an embodiment. FIGS. 34A to 34C are cross-sectional views illustrating a configuration of a transistor that can be used in the display device according to an embodiment, and FIG. 34D is a front view illustrating a configuration of a transistor. FIGS. 35A to 35D are diagrams illustrating a configuration of an electronic device according to an embodiment. FIGS. 36A to 36F are diagrams illustrating a configuration of an electronic device according to an embodiment. FIGS. 37A to 37G are diagrams illustrating a configuration of an electronic device according to an embodiment.

[0062] A display device according to one embodiment of the present invention includes a first light-emitting device, a second light-emitting device, a third light-emitting device, an insulating layer, a first layer, a second layer, and a third layer.

[0063] The first light-emitting device includes a first electrode, a fourth layer, and a first unit, where the first electrode is formed on the insulating layer, the fourth layer is formed on the first electrode, and the fourth layer is sandwiched between the first electrode and the first unit, and the first unit includes a first light-emitting material and has a first side.

[0064] The second light-emitting device includes a second electrode, a fifth layer, and a second unit, the second electrode being formed on the insulating layer, the second electrode being adjacent to the first electrode, and the second electrode being disposed with a first gap between the first electrode and the fifth layer being formed on the second electrode, the fifth layer being sandwiched between the second electrode and the second unit, the second unit including a second light-emitting material, the second unit being disposed with a second gap between the first unit and the fifth layer, the second gap overlapping the first gap, and the second unit having a second side facing the first side.

[0065] The third light-emitting device includes a third unit and a sixth layer, the sixth layer being formed on the second gap, the third unit being sandwiched between the sixth layer and the first gap, and the third unit including a third light-emitting material.

[0066] The first layer overlaps the first gap, contacts the insulating layer, contacts a first side surface and a second side surface, and includes a first opening and a second opening, the first opening overlaps the first electrode, and the second opening overlaps the second electrode.

[0067] The second layer fills the first gap and the second gap, and the second layer has a third opening and a fourth opening, the third opening overlapping the first opening and the fourth opening overlapping the second opening.

[0068] The third layer is formed on the second layer, the third layer contacts the second layer and the third unit, the third layer contacts the first unit at the third opening, and the third layer contacts the second unit at the fourth opening.

[0069] This allows the third light-emitting device to be arranged overlapping the first light-emitting device and the second light-emitting device. Furthermore, the total area of ​​the first light-emitting device, the second light-emitting device, and the third light-emitting device in a top view can be made larger than when the first light-emitting device, the second light-emitting device, and the third light-emitting device are arranged side by side. Furthermore, by arranging the third light-emitting device overlapping the first light-emitting device and the second light-emitting device, the ratio of the total area of ​​the first light-emitting device, the second light-emitting device, and the third light-emitting device in a top view to the area of ​​a region in which a set of pixels is arranged can be, for example, 40% or more and less than 200%, preferably 100% or more and less than 200%. Furthermore, even if the current density flowing through the light-emitting device is reduced, light can be emitted at the same brightness. Furthermore, the reliability of the display device can be improved. As a result, a novel display device with excellent convenience, usefulness, and reliability can be provided.

[0070] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it will be readily understood by those skilled in the art that various changes in form and details can be made without departing from the spirit and scope of the present invention. Therefore, the present invention should not be interpreted as being limited to the description of the embodiments shown below. In the configuration of the invention described below, the same parts or parts having similar functions will be denoted by the same reference numerals in different drawings, and repeated explanations will be omitted.

[0071] In the drawings accompanying this specification, components are classified by function and shown as block diagrams that are independent of each other, but in reality, it is difficult to completely separate components by function, and one component may be involved in multiple functions.

[0072] Embodiment 1 In this embodiment, a display device of one embodiment of the present invention will be described with reference to FIGS.

[0073] 1A is a perspective view illustrating a structure of a display device according to one embodiment of the present invention, FIG. 1B is a front view of FIG. 1A, and FIG. 1C is a front view illustrating a part of FIG. 1A.

[0074] 2A is a cross-sectional view illustrating a structure of a display device according to one embodiment of the present invention taken along the cutting line P1-P2 in FIG. 1C, and FIG. 2B is a cross-sectional view illustrating a structure different from that in FIG. 2A.

[0075] 3A is a cross-sectional view illustrating a structure of a display device according to one embodiment of the present invention taken along the line P1-P2 in FIG. 1C, and FIG. 3B is a cross-sectional view illustrating a part of FIG. 3A.

[0076] FIG. 4 is a cross-sectional view illustrating a portion of FIG. 3A.

[0077] <Configuration Example 1 of Display Device> A display device 700 described in this embodiment has a display region 731 (see FIGS. 1A and 1B).

[0078] The display region 731 includes a set of pixels 703. The set of pixels 703 includes a pixel 702A, a pixel 702B, and a pixel 702C (see FIG. 1C ). The set of pixels 703 is arranged in a region that is the minimum unit for displaying full color, for example, a region divided into a grid pattern by dashed lines as shown in FIG. 1C . A conductive layer 552 and an electrode 551C are also arranged in this region.

[0079] The pixel 702A includes a light-emitting device 550A and a pixel circuit 530A, and the light-emitting device 550A is connected to the pixel circuit 530A (see FIGS. 2A and 2B). Note that in this specification, "connection" includes "electrical connection."

[0080] "A and B are electrically connected" means that, among the cases where A and B are connected without an insulator (where A and B are connected via a conductor or semiconductor, or where A and B are in contact), there is a time when exchange of electrical signals or interaction of potentials occurs between A and B during circuit operation. In other words, even if there is a time when exchange of electrical signals or interaction of potentials does not occur between A and B during circuit operation, it can be said that "A and B are electrically connected" as long as there is a time when exchange of electrical signals or interaction of potentials occurs between A and B.

[0081] Pixel 702B includes a light emitting device 550B and a pixel circuit 530B, where light emitting device 550B is connected to pixel circuit 530B.

[0082] Pixel 702C includes a light emitting device 550C and a pixel circuit 530C, where light emitting device 550C is electrically connected to pixel circuit 530C.

[0083] The conductive layer 552 is electrically connected to the light-emitting device 550A, the light-emitting device 550B, and the light-emitting device 550C and supplies a common potential to them.

[0084] The display device 700 also includes a functional layer 520 , a substrate 510 and a layer 573 .

[0085] The functional layer 520 includes an insulating layer 521. The insulating layer 521 is sandwiched between the light-emitting device 550A and the pixel circuit 530A and has insulating properties.

[0086] The functional layer 520 also includes a pixel circuit 530A, a pixel circuit 530B, and a pixel circuit 530C. The pixel circuit 530A is sandwiched between the light-emitting device 550A and the substrate 510, the pixel circuit 530B is sandwiched between the light-emitting device 550B and the substrate 510, and the pixel circuit 530C is sandwiched between the light-emitting device 550C and the substrate 510. The functional layer 520 also includes an insulating layer 501. The pixel circuit 530A is sandwiched between the insulating layer 501 and the insulating layer 521.

[0087] The layer 573 has an overlapping region overlapping with the insulating layer 521, and the overlapping region includes a display region 731 (see FIG. 1A ). The light-emitting device 550A is sandwiched between the layer 573 and the insulating layer 521 (see FIG. 2A ). For example, the layer 573 can be made of a material that transmits light emitted by the light-emitting device and has a refractive index of 1.8 or higher for light of the reference wavelength d-line (wavelength 587.56 nm). This allows light to be extracted efficiently from the light-emitting device 550A. Furthermore, the layer 573 can be made of a film that is less permeable to impurities such as water or oxygen. Specifically, the layer 573 can be made of a film containing nitrogen and silicon.

[0088] The light-emitting device 550A of the display device 700 of one embodiment of the present invention emits light ELA in a direction where the pixel circuit 530A is not arranged, the light-emitting device 550B emits light ELB in a direction where the pixel circuit 530B is not arranged, and the light-emitting device 550C emits light ELC in a direction where the pixel circuit 530C is not arranged (see FIG. 2A ). In other words, the display device 700 of one embodiment of the present invention is a top-emission display device.

[0089] Furthermore, the light-emitting device 550A of the display device 700 of one embodiment of the present invention emits light ELA in the direction in which the pixel circuit 530A is disposed, the light-emitting device 550B emits light ELB in the direction in which the pixel circuit 530B is disposed, and the light-emitting device 550C emits light ELC in the direction in which the pixel circuit 530C is disposed (see FIG. 2B ). In other words, the display device 700 of one embodiment of the present invention is a bottom-emission display device.

[0090] <Configuration Example 2 of Display Device> A display device 700 described in this embodiment includes a light-emitting device 550A, a light-emitting device 550B, a light-emitting device 550C, an insulating layer 521, a layer 529_1, a layer 529_2, and a layer 105 (see FIG. 3A).

[0091] For example, a light-emitting device that emits blue light, a light-emitting device that emits green light, and a light-emitting device that emits red light can be applied to light-emitting device 550A, light-emitting device 550B, and light-emitting device 550C. This allows light-emitting device 550A, light-emitting device 550B, and light-emitting device 550C to emit light of different colors and with different luminances. Furthermore, full-color display can be achieved using display device 700.

[0092] <Configuration Example 1 of Light-Emitting Device 550A> The light-emitting device 550A includes an electrode 551A, a layer 104A, and a unit 103A.

[0093] [Configuration Example of Electrode 551A] The electrode 551A is formed on the insulating layer 521. Note that a layer REFA can be disposed between the electrode 551A and the insulating layer 521. For example, a layer containing aluminum or a layer containing silver can be used for the layer REFA. This allows light emitted from the light-emitting device 550A toward the layer REFA to be efficiently reflected.

[0094] [Configuration Example of Layer 104A] The layer 104A is formed on the electrode 551A, and is sandwiched between the electrode 551A and the unit 103A. The layer 104A also contains a carrier injection material CIM.

[0095] [Example 1 of Carrier Injection Material CIM] For example, when the electrode 551A functions as an anode, a material having hole injection properties can be used as the carrier injection material CIM, which allows the layer 104A to receive holes from the electrode 551A and transfer them to the unit 103A.

[0096] For example, the hole mobility is 1×10 when the square root of the electric field strength V / cm is 600. −３ cm ２ / Vs or less can be used for the layer 104A. ４ Ω・cm or more 1×10 ７ A film having an electrical resistivity of 5×10 Ω·cm or less can be used for the layer 104A. ４ Ω・cm or more 1×10 ７ It has an electrical resistivity of Ω cm or less, and more preferably, 1×10 ５ Ω・cm or more 1×10 ７ It has an electrical resistivity of Ω·cm or less.

[0097] Specifically, a substance having an electron-accepting property can be used for the layer 104A. Alternatively, a composite material containing a plurality of substances can be used for the layer 104A.

[0098] Organic and inorganic compounds can be used as the electron-accepting material. The electron-accepting material can extract electrons from the adjacent hole-transporting layer or the material having hole-transporting properties when an electric field is applied.

[0099] For example, a compound having an electron-withdrawing group (a halogen group or a cyano group) can be used as the electron-accepting substance. Note that organic compounds having electron-accepting properties are easy to vapor-deposit and form into films.

[0100] [Example 2 of Carrier Injection Material CIM] When the electrode 551A functions as a cathode, a material having an electron injection property can be used as the carrier injection material CIM, which allows the layer 104A to receive electrons from the electrode 551A and transfer them to the unit 103A.

[0101] Specifically, a substance having an electron-donating property can be used for the layer 104A. Alternatively, a composite material of a substance having an electron-donating property and a material having an electron-transporting property can be used for the layer 104A. Alternatively, an electride can be used for the layer 104A.

[0102] For example, alkali metals, alkaline earth metals, rare earth metals, or compounds thereof (oxides, halides, carbonates, etc.) can be used as the electron-donating substance. Alternatively, organic compounds such as tetrathianaphthacene (abbreviated as TTN), nickelocene, and decamethylnickelocene can also be used as the electron-donating substance.

[0103] [Configuration Example of Unit 103A] The unit 103A includes a light-emitting material EMA. For example, a fluorescent material, a phosphorescent material, or a material exhibiting thermally activated delayed fluorescence can be used as the light-emitting material EMA. The unit 103A also includes a side surface 103AS (see FIG. 4).

[0104] Furthermore, a structure in which multiple layers are stacked can be used for the unit 103A. For example, a layer having hole transport properties, a layer containing the light-emitting material EMA, and a layer having electron transport properties can be used for the unit 103A. Note that a structure in which a layer containing the light-emitting material EMA is disposed in a region where holes and electrons recombine is preferred. For example, the layer having hole transport properties is disposed closer to the anode than the layer containing the light-emitting material EMA, and the layer having electron transport properties is disposed closer to the cathode than the layer containing the light-emitting material EMA. This allows the energy generated by carrier recombination to be efficiently converted into light and emitted.

[0105] <Configuration Example 1 of Light-Emitting Device 550B> The light-emitting device 550B includes an electrode 551B, a layer 104B, and a unit 103B (see FIG. 3A).

[0106] [Configuration Example of Electrode 551B] The electrode 551B is formed on the insulating layer 521. The electrode 551B is adjacent to the electrode 551A, and the electrode 551B is disposed with a gap 551AB between it and the electrode 551A. Note that a layer REFB can be disposed between the electrode 551B and the insulating layer 521. For example, the same material that can be used for the layer REFA can be used for the layer REFB.

[0107] [Configuration Example of Layer 104B] Layer 104B is formed on electrode 551B, and layer 104B is sandwiched between electrode 551B and unit 103B. Layer 104B is also disposed with gap 104AB sandwiched between layer 104B and layer 104A, and gap 104AB overlaps gap 551AB. Layer 104B includes a carrier injection material CIM. The carrier injection material that can be used for layer 104A can also be used for layer 104B.

[0108] [Configuration Example of Unit 103B] The unit 103B includes a light-emitting material EMB. Note that a material that can be used for the light-emitting material EMA can be used for the light-emitting material EMB. For example, a material that emits light of a color different in hue from the color of light emitted by the light-emitting material EMA can be used for the light-emitting material EMB.

[0109] The unit 103B is disposed with a gap 103AB between it and the unit 103A. The gap 103AB overlaps with the gap 551AB. The unit 103B also has a side surface 103BS (see FIG. 4). The side surface 103BS faces the side surface 103AS.

[0110] <Configuration Example 1 of Light-Emitting Device 550C> The light-emitting device 550C includes a unit 103C and a layer 104C (see FIG. 3A).

[0111] [Configuration Example of Layer 104C] The layer 104C is formed on the gap 103AB. The layer 104C includes a carrier injection material CIM. The carrier injection material that can be used for the layer 104A can also be used for the layer 104C.

[0112] [Configuration Example 1 of Unit 103C] The unit 103C is sandwiched between the layer 104C and the gap 551AB, and includes a light-emitting material EMC. Note that a material that can be used for the light-emitting material EMA can be used for the light-emitting material EMC. For example, a material that emits light of a color different in hue from the color of light emitted by the light-emitting material EMA and the color of light emitted by the light-emitting material EMB can be used for the light-emitting material EMC.

[0113] <Structure Example 1 of Layer 529_1> The layer 529_1 overlaps the gap 551AB and is in contact with the insulating layer 521 (see FIG. 3B ). The layer 529_1 is in contact with the side surface 103AS and the side surface 103BS. The layer 529_1 has insulating properties. For example, aluminum oxide, silicon oxide, or silicon nitride can be used for the layer 529_1.

[0114] The layer 529_1 includes an opening 529_1A and an opening 529_1B. The opening 529_1A overlaps with the electrode 551A, and the opening 529_1B overlaps with the electrode 551B.

[0115] <Configuration Example 1 of Layer 529_2> The layer 529_2 fills the gap 551AB and the gap 103AB. The layer 529_2 also includes an opening 529_2A and an opening 529_2B. The opening 529_2A overlaps with the opening 529_1A, and the opening 529_2B overlaps with the opening 529_1B. The layer 529_2 has insulating properties. For example, a photosensitive polymer can be used for the layer 529_2. This can prevent adjacent light-emitting devices from emitting light with an unintended luminance when the other light-emitting device is activated. The adjacent light-emitting devices can be made to emit light independently. Crosstalk between the light-emitting devices can be prevented. A display device capable of displaying a wide color gamut can be provided. The step caused by the gap 551AB can be made nearly flat. The step can also prevent a break or tear from occurring in the layer 105, which will be described later, due to the step. Furthermore, it is possible to suppress the phenomenon in which the conductivity is reduced due to the generated cuts or cracks.

[0116] <Structure Example of Layer 105> The layer 105 is formed over the layer 529_2 (see FIG. 3A). The layer 105 is in contact with the layer 529_2 and the unit 103C. The layer 105 is in contact with the unit 103A through an opening 529_2A and with the unit 103B through an opening 529_2B.

[0117] For example, when the electrode 551A and the electrode 551B function as anodes, a material having an electron injecting property can be used for the layer 105. This allows the layer 105 to donate electrons to the unit 103A and the unit 103B.

[0118] Furthermore, for example, when the electrode 551A and the electrode 551B function as cathodes, a material having a hole-injecting property can be used for the layer 105. In this way, the layer 105 can transfer holes to the unit 103A and the unit 103B.

[0119] <Configuration Example 3 of Display Device> In the display device 700 described in this embodiment, the layer 104A has a function of injecting holes into the unit 103A, the layer 104B has a function of injecting holes into the unit 103B, and the layer 104C has a function of injecting holes into the unit 103C.

[0120] Furthermore, layer 105 has the function of injecting electrons into unit 103A, unit 103B, and unit 103C. This allows light-emitting device 550A, light-emitting device 550B, and light-emitting device 550C to be driven by fixing the potential applied to layer 105. The same configuration as the pixel circuit controlling the potential of electrode 551A can be applied to the pixel circuit controlling the potential of electrode 551B and the pixel circuit controlling the potential of electrode 551C. The same configuration as the pixel circuit driving light-emitting device 550A can be applied to the pixel circuit driving light-emitting device 550B and the pixel circuit driving light-emitting device 550C. Furthermore, electrode 551C can be controlled at a higher potential than in a configuration in which layer 104C injects electrons into unit 103C and layer 105 injects holes into unit 103C.

[0121] <Configuration Example 4 of Display Device> In display device 700 described in this embodiment, light-emitting device 550C covers light-emitting device 550A, light-emitting device 550B, and gap 103AB (see FIG. 3A).

[0122] For example, a configuration that emits green light can be applied to light-emitting device 550A, a configuration that emits red light can be applied to light-emitting device 550B, and a configuration that emits blue light can be applied to light-emitting device 550C. Alternatively, a configuration that is intended to be used at a lower current density can be selected and applied to light-emitting device 550C compared to the configurations of other light-emitting devices. Alternatively, a light-emitting device configuration that is less reliable than the configurations of other light-emitting devices can be selected and applied to light-emitting device 550C. This allows the reliability of light-emitting device 550C to approach the reliability of the other light-emitting devices.

[0123] <Structural Example 5 of Display Device> A display device 700 described in this embodiment includes a layer 529_3 and a conductive layer 552 (see FIG. 3A).

[0124] <Structure Example 2 of Layer 529_1> The layer 529_1 includes an opening 529_1C and an opening 529_1E (see FIG. 3B).

[0125] <Structure Example 2 of Layer 529_2> The layer 529_2 includes an opening 529_2C and an opening 529_2E. The opening 529_2C overlaps with the opening 529_1C, and the opening 529_2E overlaps with the opening 529_1E.

[0126] <<Configuration Example 2 of Light-Emitting Device 550C>> The light-emitting device 550C includes an electrode 551C (see FIG. 3A).

[0127] [Structure Example of Electrode 551C] The electrode 551C is formed over the insulating layer 521 and overlaps with the opening 529_1C (see FIG. 3B). The electrode 551C is in contact with the layer 104C through the opening 529_1C (see FIGS. 3A and 3B). A layer REFC can be disposed between the electrode 551C and the insulating layer 521. For example, the material that can be used for the layer REFA can be used for the layer REFC. When the electrodes 551A and 551B function as anodes, the electrode 551C also functions as an anode. When the electrodes 551A and 551B function as cathodes, the electrode 551C also functions as a cathode.

[0128] [Configuration Example 2 of Unit 103C] The unit 103C includes a side surface portion 103CS on the layer 529_2 (see FIG. 4).

[0129] <Structure Example of Layer 529_3> The layer 529_3 is formed over the layer 529_2. The layer 529_3 is in contact with the side surface portion 103CS and the layer 104C. The layer 529_3 has insulating properties. For example, the material that can be used for the layer 529_1 can be used for the layer 529_3.

[0130] <Structure Example of the Conductive Layer 552> The conductive layer 552 is formed over the insulating layer 521, and overlaps with the opening 529_1E (see FIG. 3A). The conductive layer 552 is in contact with the layer 105 in the opening 529_1E (see FIGS. 3A and 3B). Note that a layer REFE can be disposed between the conductive layer 552 and the insulating layer 521. For example, the material that can be used for the layer REFA can be used for the layer REFE.

[0131] This allows the light-emitting device 550C to be arranged overlapping the light-emitting device 550A and the light-emitting device 550B. Furthermore, the total area of ​​the light-emitting device 550A, the light-emitting device 550B, and the light-emitting device 550C in a top view can be made larger than when the light-emitting device 550A, the light-emitting device 550B, and the light-emitting device 550C are arranged side by side. Furthermore, by arranging the light-emitting device 550C overlapping the light-emitting device 550A and the light-emitting device 550B, the ratio (also referred to as aperture ratio) of the total area of ​​the light-emitting device 550A, the light-emitting device 550B, and the light-emitting device 550C in a top view to the area of ​​the region where a set of pixels 703 is arranged can be, for example, 40% or more and less than 200%, preferably 100% or more and less than 200%. Note that the conductive layer 552 and the electrode 551C are also arranged in the grid-shaped region, so the pixel aperture ratio cannot be 200%. Furthermore, even if the current density flowing through the light-emitting device is reduced, the light-emitting device can emit light with the same luminance. Furthermore, the reliability of the light-emitting device can be improved. As a result, a novel display device excellent in convenience, usefulness, and reliability can be provided.

[0132] <Configuration Example 5 of Display Device> The display device 700 described in this embodiment has layers IntCA, IntCB, IntCC, and IntCE (see FIG. 3A ). The layers IntCA, IntCB, IntCC, and IntCE are all conductive. For example, tungsten can be used for the layers IntCA, IntCB, IntCC, and IntCE.

[0133] The layer IntCA connects the light emitting device 550A to a pixel circuit (not shown), the layer IntCB connects the light emitting device 550B to a pixel circuit (not shown), and the layer IntCC connects the light emitting device 550C to a pixel circuit (not shown). The layer IntCE also has the function of supplying a common potential to the layer 105.

[0134] The display device 700 described in this embodiment also includes a layer SCRA2, a layer SCRB2, and a layer SCRC4. The layer SCRA2 is sandwiched between the layer 529_1 and the unit 103A, the layer SCRB2 is sandwiched between the layer 529_1 and the unit 103B, and the layer SCRC4 overlaps with the layer 104C. For example, a film containing aluminum oxide can be used for the layers SCRA2, SCRB2, and SCRC4.

[0135] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0136] Embodiment 2 In this embodiment, a manufacturing method of a display device according to one embodiment of the present invention will be described with reference to FIGS.

[0137] <Example of Manufacturing Method of Display Device 700> A manufacturing method of a display device described in this embodiment has the following phases from start (START) to end (END) (see FIG. 5).

[0138] <Phase PH0> Phase PH0 is a phase in which a circuit board for the display device is formed.

[0139] In phase PH0, a functional layer 520 is formed on a substrate 510 (see FIG. 6 ). The functional layer 520 includes an insulating layer 501 and an insulating layer 521. The functional layer 520 also includes, between the insulating layer 501 and the insulating layer 521, a pixel circuit (not shown) or a drive circuit (not shown), for example.

[0140] <Phase PH1> Phase PH1 is a phase in which the electrodes 551A, 551B, 551C and the conductive layer 552 are formed (see FIGS. 6 to 9).

[0141] [Step 1] In step 1 of phase PH1, the film IntC is formed on the insulating layer 521 (see FIG. 6). For example, tungsten can be formed on the insulating layer 521 by sputtering and used as the film IntC.

[0142] Furthermore, the layer REFA, the layer REFB, the layer REFC, and the layer REFE are formed over the insulating layer 521. For example, a structure in which a layer containing titanium, a layer containing aluminum, and a layer containing titanium are stacked can be used for the layer REFA, the layer REFB, the layer REFC, and the layer REFE.

[0143] For example, a film that will later become layers REFA, REFB, REFC, and REFE is formed on the film IntC by sputtering. Next, a photoresist PR is formed, and the layers REFA, REFB, REFC, and REFE are formed by photolithography.

[0144] It is also possible to form the layers REFA, REFB, REFC, and REFE on the insulating layer 521 without forming the film IntC. In this case, the layer REFA connects the light-emitting device 550A to the pixel circuit, the layer REFB connects the light-emitting device 550B to the pixel circuit, and the layer REFC connects the light-emitting device 550C to the pixel circuit.

[0145] A conductive film 551 is formed over the layers REFA, REFB, REFC, and REFE (see FIG. 7). The conductive film 551 is formed by, for example, a sputtering method. Specifically, the conductive film 551 can be formed using indium oxide-tin oxide (abbreviation: ITSO) containing silicon or silicon oxide.

[0146] Note that the conductive film 551 may be formed on the insulating layer 521 without forming the film IntC, the layer REFA, the layer REFB, the layer REFC, and the layer REFE. In this case, the conductive film 551 connects the light-emitting device to the pixel circuit.

[0147] [Step 2] In step 2 of phase PH1, a photoresist PR is formed on the conductive film 551, and an electrode 551A, an electrode 551B, a gap 551AB, an electrode 551C, and a conductive layer 552 are formed on the insulating layer 521 by photolithography (see FIG. 8). Note that the gap 551AB is sandwiched between the electrode 551A and the electrode 551B.

[0148] Alternatively, a film that will later become layers REFA, REFB, REFC, and REFE may be formed on insulating layer 521, a conductive film 551 may be formed thereon, and then photolithography may be used to form layers REFA, REFB, REFC, REFE, electrode 551A, electrode 551B, gap 551AB, electrode 551C, and conductive layer 552.

[0149] Phase PH2A Phase PH2A is a phase for forming a part of the light emitting device 550A, specifically, a layer 104A and a unit 103A (see FIGS. 10 to 12).

[0150] [Step 1] In step 1 of phase PH2A, a film 104a is formed over the electrode 551A, the electrode 551B, the electrode 551C, and the conductive layer 552 (see FIG. 10). For example, the film 104a can be formed by a resistance heating method. Specifically, an organic compound can be evaporated or co-evaporated.

[0151] [Step 2] In step 2 of phase PH2A, a film 103a is formed on the film 104a. For example, a predetermined film can be formed using a resistance heating method. Specifically, an organic compound can be vapor-deposited or co-deposited.

[0152] [Step 3] In step 3 of phase PH2A, a film SCRa2 is formed on the film 103a. For example, when a film containing aluminum oxide having a thickness of 30 nm is used as the film SCRa2, the film SCRa2 can be formed by the ALD method.

[0153] [Step 4] In step 4 of phase PH2A, a film SCRa1 is formed on the film SCRa2. For example, when a 50-nm-thick film containing tungsten is used for the film SCRa1, the film SCRa1 can be formed by sputtering.

[0154] [Step 5] In step 5 of phase PH2A, a photoresist PR is formed on the film SCRa1, and the film SCRa1 is removed from the electrodes 551B, 551C, and the conductive layer 552 by photolithography to form a layer SCRa1 overlapping the electrode 551A (see FIG. 11). For example, when a film containing tungsten is used for the film SCRa1, sulfur hexafluoride (SF ６ ) can be used to etch the film SCRa1.

[0155] [Step 6] In step 6 of phase PH2A, the layer SCRA2, the film 103a, and the film 104a are removed from the electrode 551B, the electrode 551C, and the conductive layer 552 using a layer SCRA1 etching method, and a layer SCRA2, a unit 103A, and a layer 104A are formed on the electrode 551A (see FIG. 12).

[0156] The layer SCRA2 is sandwiched between the layer SCRA1 and the electrode 551A, and the unit 103A is sandwiched between the layer SCRA2 and the electrode 551A.

[0157] For example, when a film containing aluminum oxide is used as the film SCRa2, trifluoromethane (CHF ３ ), helium (He) and methane (CH ４ A gas containing oxygen can be used to etch the film SCRa2. When an organic compound is used for the film 103a, a gas containing oxygen can be used to etch the film 103a. The layer SCRA1 functions as a hard mask.

[0158] <Phase PH2B> Phase PH2B is a phase that forms part of light-emitting device 550B. Specifically, layer 104B and unit 103B are formed (see FIGS. 13 and 14). Here, parts in which the method is different will be described in detail, and the above description will be used for parts in which the same method can be used.

[0159] [Step 1] In step 1 of phase PH2B, a film 104b is formed over the layer SCRA1, the electrode 551B, the electrode 551C, and the conductive layer 552 (see FIG. 13). For example, the film 104b is formed by a resistance heating method. Specifically, an organic compound can be evaporated or co-evaporated.

[0160] [Step 2] In step 2 of phase PH2B, a film 103b is formed on the film 104b. For example, a predetermined film can be formed by using a resistance heating method. Specifically, an organic compound can be vapor-deposited or co-deposited.

[0161] [Step 3] In step 3 of phase PH2B, a film SCRb2 is formed on the film 103b. Note that the same material as that used for the film SCRa2 can also be used for the film SCRb2.

[0162] [Step 4] In step 4 of phase PH2B, a film that will later become the layer SCRB1 is formed on the film SCRb2. Note that the material that can be used for the film SCRa1 can also be used for the film that will later become the layer SCRB1.

[0163] [Step 5] In step 5 of phase PH2B, a photoresist PR is formed on the film that will later become the layer SCRB1, and unnecessary portions are removed from the layer SCRB1, the electrode 551C, and the conductive layer 552 using a photolithography method to form the layer SCRB1 that overlaps the electrode 551B. For example, when a film containing tungsten is used for the layer SCRB1, SF ６ A gas containing the above can be used to etch the film SCRb1.

[0164] [Step 6] In step 6 of phase PH2B, layer SCRB1 and etching are used to remove film SCRb2, film 103b, and film 104b from layer SCRA1, electrode 551C, conductive layer 552, and gap 551AB, thereby forming layer SCRB2, unit 103B, and layer 104B on electrode 551B. Also, gap 103AB is formed on gap 551AB (see FIG. 14).

[0165] The layer SCRB2 is sandwiched between the layer SCRB1 and the electrode 551B, and the unit 103B is sandwiched between the layer SCRB2 and the electrode 551B. The gap 103AB overlaps with the gap 551AB.

[0166] For example, when a film containing aluminum oxide is used for the film SCRb2, CHF ３ , He and CH ４ A gas containing oxygen can be used to etch the film SCRb2. When an organic compound is used for the film 103b, for example, a gas containing oxygen can be used to etch the film 103b. The layer SCRB1 functions as a hard mask.

[0167] [Step 7] In step 7 of phase PH2B, the layers SCRA1 and SCRB1 are removed using an etching method (see FIG. 15).

[0168] Phase PH3 is a phase for forming layers 529_1 and 529_2 (see FIGS. 16 and 17). Here, portions in which the method is different will be described in detail, and the above description will be cited for portions in which the same method can be used.

[0169] [Step 1] In step 1 of phase PH3, a layer 529_1 is formed (see FIG. 16). The layer 529_1 contacts the insulating layer 521 in the gap 551AB and covers the units 103A and 103B.

[0170] For example, when a film containing aluminum oxide is used for the layer 529_1, the layer 529_1 can be formed by an ALD method.

[0171] [Step 2] In step 2 of phase PH3, a layer 529_2 is formed. The layer 529_2 fills the gaps 551AB and 103AB. The layer 529_2 also includes an opening 529_2A overlapping the electrode 551A and an opening 529_2B overlapping the electrode 551B. The layer 529_2 also includes an opening 529_2C overlapping the electrode 551C and an opening 529_2E overlapping the conductive layer 552.

[0172] For example, a photosensitive polymer can be used for the layer 529_2. Specifically, a film containing a photosensitive polymer is formed by spin coating, and openings 529_2A, 529_2B, 529_2C, and 529_2E are formed by photolithography (see FIG. 3B).

[0173] [Step 3] In step 3 of phase PH3, the layer 529_2 is etched to remove the layer 529_1 and the layer SCRA2 that overlap the opening 529_2A, and the layer 529_1 and the layer SCRB2 that overlap the opening 529_2B (see FIG. 17). The layer 529_1 that overlaps the opening 529_2E is also removed. For example, when aluminum oxide is used for the layer 529_1, the layer SCRA2, the layer SCRB2, and the layer SCRC2 (described later), an aqueous solution containing hydrofluoric acid (HF) can be used for the etching.

[0174] The layer 529_2 can be softened and made fluid by, for example, heating the workpiece WP on which the layer 529_2 is formed.

[0175] <Phase PH4> Phase PH4 is a phase for forming a part of light-emitting device 550C. Specifically, layer 105, unit 103B, and layer 104C are formed (see FIGS. 18 to 23). Here, parts in which the method is different will be described in detail, and the above description will be used for parts in which the same method can be used.

[0176] [Step 1] In step 1 of phase PH4, the layer 105 is formed over the unit 103A, the unit 103B, the electrode 551C, the conductive layer 552, and the layer 529_2 (see FIG. 18). For example, the layer 105 is formed by a resistance heating method. Specifically, an organic compound can be evaporated or co-evaporated.

[0177] [Step 2] In step 2 of phase PH4, a film 103c is formed on the layer 105. For example, a predetermined film can be formed by using a resistance heating method. Specifically, an organic compound can be evaporated or co-evaporated.

[0178] [Step 3] In step 3 of phase PH4, a film SCRc2 is formed on the film 103c. Note that the same material as that used for the film SCRa2 can also be used for the film SCRc2.

[0179] [Step 4] In step 4 of phase PH4, a film that will later become the layer SCRC1 is formed on the film SCRc2. Note that the material that can be used for the film SCRa1 can also be used for the film that will later become the layer SCRC1.

[0180] [Step 5] In step 5 of phase PH4, a photoresist PR is formed on the film that will later become the layer SCRB1, and the film SCRC1 is removed from the electrode 551C using a photolithography method to form a layer SCRC1 that overlaps the electrode 551A, the electrode 551B, and the conductive layer 552. For example, when a film containing tungsten is used for the film SCRb1, SF ６ A gas containing the above can be used to etch the film SCRb1.

[0181] [Step 6] In step 6 of phase PH4, the layer SCRC1 and the film SCRc2, the film 103c, and the layer 105 are removed from above the electrode 551C by etching, thereby forming a layer SCRC2, a unit 103C, and a layer 105 (see FIG. 19).

[0182] For example, when a film containing aluminum oxide is used for the film SCRc2, CHF ３ , He and CH ４A gas containing oxygen can be used to etch the film SCRc2. When an organic compound is used for the film 103c, for example, a gas containing oxygen can be used to etch the film 103c. The layer SCRC1 functions as a hard mask.

[0183] [Step 7] In step 7 of phase PH4, a layer 529_3 is formed on the layer SCRC2, on the side surfaces of the unit 103C, and on the side surfaces of the layer 105 (see FIG. 20).

[0184] For example, when a film containing aluminum oxide is used for the layer 529_3, the layer 529_3 can be formed by an ALD method.

[0185] [Step 8] In step 8 of phase PH4, the layer 529_3 is removed by anisotropic etching, leaving the side surfaces of the unit 103C and the layer 105 in contact with them (see FIG. 21). Also, the layer SCRC2 is removed.

[0186] For example, when a film containing aluminum oxide is used for the layer 529_3, CHF ３ , He and CH ４ A gas containing the compound can be used to etch the film SCRc2.

[0187] [Step 9] In step 9 of phase PH4, a film 104c is formed on the unit 103C, the layer 529_3, and the electrode 551C (see FIG. 22). For example, the film 104c can be formed by a resistance heating method. Specifically, an organic compound can be evaporated or co-evaporated.

[0188] [Step 10] In step 10 of phase PH4, a film SCRc4 is formed on the film 104c. Note that the material that can be used for the film SCRa2 can also be used for the film SCRc4.

[0189] [Step 11] In step 11 of phase PH4, a film that will later become the layer SCRC3 is formed on the film SCRc4. Note that the material that can be used for the film SCRa1 can also be used for the film that will later become the layer SCRC3.

[0190] [Step 12] In step 12 of phase PH4, a photoresist PR is formed on the film that will later become the layer SCRC3, and unnecessary portions are removed from the conductive layer 552 using a photolithography method to form the layer SCRC3 that overlaps the electrodes 551A, 551B, and 551C. For example, when tungsten is used for the layer SCRC3, SF ６ A gas containing HCl can be used to etch the film that will later become the layer SCRC3.

[0191] [Step 13] In step 13 of phase PH4, the layer SCRC3 and the film 104c are removed from the conductive layer 552 by etching, thereby forming a layer SCRC4 and a layer 104C (see FIG. 23).

[0192] For example, when a film containing aluminum oxide is used for the film SCRc4, CHF ３ , He and CH ４ A gas containing oxygen can be used to etch the film SCRc4. When an organic compound is used for the film 104c, a gas containing oxygen can be used to etch the film 104c. The layer SCRC3 functions as a hard mask.

[0193] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0194] Embodiment 3 In this embodiment, structural examples of a display module and a display device that can be used as a display device of one embodiment of the present invention will be described with reference to FIGS.

[0195] FIG. 24A is a perspective view illustrating a display module of one embodiment of the present invention, and FIG. 24B is a schematic diagram illustrating the structure of the display module illustrated in FIG. 24A.

[0196] FIG. 25A is a perspective view illustrating a display module of one embodiment of the present invention, and FIG. 25B is a schematic diagram illustrating the structure of the display module illustrated in FIG. 25A.

[0197] FIG. 26A is a block diagram illustrating a display module of one embodiment of the present invention, and FIGS. 26B to 26E are schematic diagrams illustrating the structure of the display module illustrated in FIG. 26A.

[0198] FIG. 27 is a cross-sectional view illustrating a structure of a display device according to one embodiment of the present invention.

[0199] FIG. 28 is a cross-sectional view illustrating a structure of a display device according to one embodiment of the present invention.

[0200] FIG. 29 is a cross-sectional view illustrating a structure of a display device according to one embodiment of the present invention.

[0201] FIG. 30 is a cross-sectional view illustrating a structure of a display device according to one embodiment of the present invention.

[0202] FIG. 31 is a cross-sectional view illustrating a structure of a display device according to one embodiment of the present invention.

[0203] FIG. 32 is a cross-sectional view illustrating a structure of a display device according to one embodiment of the present invention.

[0204] FIG. 33 is a cross-sectional view illustrating a structure of a display device according to one embodiment of the present invention.

[0205] 34A to 34C are cross-sectional views illustrating a structure of a transistor that can be used in a display device of one embodiment of the present invention, and FIG. 34D is a front view of the transistor illustrated in FIG. 34C.

[0206] The display device of the present embodiment can be a high-definition display device, and therefore can be used, for example, as a display unit of a wristwatch-type or bracelet-type information terminal (wearable device), as well as a display unit of a wearable device that can be worn on the head, such as a VR device such as a head-mounted display (HMD) or an AR device such as a glasses-type device.

[0207] The display device of this embodiment can be a high-resolution display device or a large-sized display device. Therefore, the display device of this embodiment can be used in electronic devices having relatively large screens, such as television devices, desktop or notebook computers, computer monitors, digital signage, and large game machines such as pachinko machines, as well as in display units of digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, personal digital assistants, and sound reproducing devices.

[0208] <Configuration Example 1 of Display Module 280> The display module 280 includes a display device 700 and an FPC 290 (see FIG. 24A ). Note that instead of the display device 700, for example, any of display devices 700A to 700F2 described below can be used for the display module 280.

[0209] <Configuration Example 1 of Display Device 700> The display device 700 includes a substrate 291 and a substrate 292. The display device 700 includes a display portion 281. The display portion 281 is a region for displaying an image. The display portion 281 also includes a pixel portion 284.

[0210] 24B is a perspective view illustrating a portion of the configuration of the display device 700. A circuit portion 282, a pixel circuit portion 283 on the circuit portion 282, and a pixel portion 284 on the pixel circuit portion 283 are stacked on a substrate 291. A terminal portion 285 is provided outside the pixel portion 284 on the substrate 291. A wiring portion 286 is provided between the circuit portion 282 and the terminal portion 285. The wiring portion 286 includes a plurality of wires and connects the terminal portion 285 and the circuit portion 282. The display device 700 is connected to an FPC 290 at the terminal portion 285.

[0211] The pixel section 284 has a plurality of periodically arranged pixels 284a. An enlarged view of one pixel 284a is shown on the right side of Fig. 24B. The pixel 284a includes a plurality of sub-pixels. For example, the pixel 284a includes a sub-pixel including a light-emitting device FP_406R, a sub-pixel including a light-emitting device FP_406G, and a sub-pixel including a light-emitting device FP_406B.

[0212] The pixel circuit section 283 has a plurality of pixel circuits 283a arranged periodically.

[0213] For example, the pixel circuit 283a can be configured to have at least one selection transistor, one current control transistor (drive transistor), and a capacitor. In this case, a gate signal is input to the gate of the selection transistor, and a source signal is input to the source. This realizes an active matrix display device.

[0214] The circuit portion 282 includes a circuit for driving each pixel circuit 283 a of the pixel circuit portion 283. For example, it is preferable that the circuit portion 282 includes one or both of a gate line driver circuit and a source line driver circuit. In addition, the circuit portion 282 may include at least one of an arithmetic circuit, a memory circuit, a power supply circuit, and the like.

[0215] The FPC 290 functions as wiring for supplying a video signal, a power supply potential, or the like from the outside to the circuit portion 282. In addition, an integrated circuit (IC) can be mounted on the FPC 290.

[0216] The display device 700 can be configured such that one or both of the pixel circuit portion 283 and the circuit portion 282 are provided below the pixel portion 284, thereby significantly increasing the aperture ratio (effective display area ratio) of the display portion 281. Furthermore, since one light-emitting device is provided overlapping another light-emitting device, the aperture ratio of the display portion 281 can be, for example, 40% or more and less than 200%, preferably 100% or more and less than 200%. Furthermore, the pixels 284a can be arranged at extremely high density, thereby significantly increasing the resolution of the display portion 281. For example, the pixels 284a are preferably arranged in the display portion 281 at a resolution of 2000 ppi or more, preferably 3000 ppi or more, more preferably 5000 ppi or more, and even more preferably 6000 ppi or more, and 20000 ppi or less, or 30000 ppi or less.

[0217] Because the display device 700 has an extremely high-definition display unit 281, it can be suitably used in VR devices such as HMDs or eyeglass-type AR devices. For example, even in a configuration in which the display unit is magnified and viewed through lenses, individual pixels cannot be distinguished, allowing for a highly immersive display. Furthermore, it can be suitably used in electronic devices with relatively small displays, such as wearable electronic devices such as wristwatches.

[0218] <Structure Example 2 of Display Module 280> The display module 280 includes a display device 700 and FPCs 290_1 to 290_4 (see FIG. 25A). The display device 700 has a rectangular shape. The FPCs 290_1 to 290_4 are connected to four corners of the display device 700.

[0219] Display device 700 has substrate 291 and display unit 281 (see FIG. 25B ). Substrate 291 has a substantially rectangular shape. The outer shape of display unit 281 is smaller than the outer shape of display unit 281, and the four corners are rounded. Alternatively, the outer shape of display unit 281 is smaller than the outer shape of display unit 281, and has an oval or circular shape.

[0220] For example, in a goggle-type or eyeglass-type display device, regions near the corners of the substrate 291 cannot be used for display. Therefore, the corners of the display portion 281 can be made more rounded than the corners of the substrate 291. Furthermore, the distance from the outline of the substrate 291 to the outline of the display portion 281 can be made longer at the corners of the substrate 291 than at the sides of the substrate 291. Furthermore, the terminal portions 285_1 to 285_4 can be arranged in the region from the outline of the substrate 291 to the outline of the display portion 281. Furthermore, the utilization efficiency of the substrate 291 can be improved.

[0221] <Configuration Example 2 of Display Device 700> The display device 700 has a pixel array 74, a circuit 75, and a circuit 76 (see FIG. 26A). The pixel array 74 has pixels 40 arranged in the column direction and the row direction.

[0222] The pixel 40 can have a plurality of sub-pixels 71. The sub-pixels 71 have the function of emitting light for display. By assigning colors such as R (red), G (green), and B (blue) to the light emitted by the sub-pixels 71, a full-color display can be achieved.

[0223] The subpixel 71 has a light-emitting device that emits unpolarized visible light. As the light-emitting device, it is preferable to use an EL element such as an OLED (organic light-emitting diode) or a QLED (quantum-dot light-emitting diode). Examples of light-emitting materials that the EL element has include fluorescent materials, phosphorescent materials, thermally activated delayed fluorescence (TADF) materials, and inorganic compounds (quantum dot materials). Alternatively, an LED such as a micro LED can be used as the light-emitting device.

[0224] The circuit 75 and the circuit 76 are driver circuits for driving the sub-pixel 71. The circuit 75 can function as a source driver circuit, and the circuit 76 can function as a gate driver circuit. The circuits 75 and 76 can be, for example, shift register circuits.

[0225] The display device 700 can be divided into a plurality of regions vertically and horizontally, and each divided region can be driven separately.

[0226] 26B , the circuit 75 and the circuit 76 can be divided and arranged below the pixel array 74. In this case, the display device 700 has a laminated structure of a layer 77 and a layer 78, and a plurality of the circuits 75 and a plurality of the circuits 76 are provided on the layer 77, and the pixel array 74 is provided on the layer 78 so as to overlap them.

[0227] By dividing the circuit 75 and the circuit 76, the pixel array 74 can be driven for each divided area. For example, the pixel array 74 can be operated at different frame rates in parts. The pixel array 74 can be displayed at different resolutions in parts, and can also be made compatible with foveated rendering.

[0228] Furthermore, by providing the driver circuit below the pixel array 74, the wiring length can be shortened and the wiring capacitance can be reduced. Therefore, the display device 700 can operate at high speed and with low power consumption. Furthermore, the display device 700 can have a narrow frame.

[0229] 26B is an example and can be changed as appropriate. Part of the circuit 75 and part of the circuit 76 can be formed in the same layer as the pixel array 74. A memory circuit, an arithmetic circuit, a communication circuit, and the like can be provided in the layer 77.

[0230] In this structure, for example, the layer 77 is provided over a single crystal silicon substrate, the circuits 75 and 76 are formed using transistors having silicon in their channel formation regions (hereinafter referred to as Si transistors), and the pixel circuits included in the pixel array 74 provided over the layer 78 are formed using transistors having an oxide semiconductor in their channel formation regions (hereinafter referred to as OS transistors). The OS transistor can be formed using a thin film and can be stacked over the Si transistor.

[0231] Note that the layer 79 including the OS transistor can be provided between the layer 77 and the layer 78 (see FIG. 26C ). The layer 79 can include an OS transistor that forms part of a pixel circuit included in the pixel array 74. Alternatively, the layer 79 can include an OS transistor that forms part of the circuit 75 and the circuit 76. Alternatively, the layer 77 can include an OS transistor that forms part of a circuit such as a memory circuit, an arithmetic circuit, or a communication circuit.

[0232] Furthermore, the shape of the display device 700 when viewed from above is not limited to a rectangle, but can be, for example, a circle or a polygon (see FIGS. 26D and 26E).

[0233] The display device of this embodiment is a high-definition display device, and is particularly suitable for use as the display section of VR devices such as head-mounted displays, and wearable devices that can be worn on the head, such as eyeglass-type AR devices.

[0234] <Display Device 700A> The display device 700A includes a layer FP, a functional layer FL1, and a functional layer FL2 (see FIG. 27).

[0235] [Layer FP] The layer FP includes a light emitting device FP_406R, a light emitting device FP_406G, and a light emitting device FP_406B. The layer FP also includes a protective layer FP_421, a layer FP_422, and a substrate FP_130.

[0236] For example, the configuration of the light-emitting device described in the first embodiment can be applied to the light-emitting device FP_406R, the light-emitting device FP_406G, and the light-emitting device FP_406B.

[0237] The protective layer FP_421 covers the light emitting device FP_406R, the light emitting device FP_406G and the light emitting device FP_406B, and the protective layer FP_421 has a single layer structure or a laminated structure.

[0238] The protective layer FP_421 includes at least an inorganic insulating film. For example, an oxide film or a nitride film such as a silicon oxide film, a silicon oxynitride film, a silicon nitride oxide film, a silicon nitride film, an aluminum oxide film, an aluminum oxynitride film, or a hafnium oxide film can be used for the protective layer FP_421. Alternatively, a semiconductor material or a conductive material such as indium gallium oxide, indium zinc oxide, indium tin oxide, or indium gallium zinc oxide can be used for the protective layer FP_421.

[0239] The substrate FP_130 covers the light-emitting devices FP_406R, FP_406G, and FP_406B. For example, glass, quartz, ceramics, sapphire, resin, metal, alloy, semiconductor, etc. can be used. A material that transmits light is used for the substrate that extracts light from the light-emitting devices. Furthermore, using a flexible material for the substrate FP_130 can increase the flexibility of the display device. Furthermore, a polarizing plate can also be used for the substrate FP_130.

[0240] Specifically, polyester resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyacrylonitrile resin, acrylic resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin (nylon, aramid, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamideimide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, cellulose nanofiber, etc. can be used for the substrate FP_130.

[0241] Furthermore, a film with high optical isotropy can be used for the substrate FP_130. For example, a triacetyl cellulose (TAC, also called cellulose triacetate) film, a cycloolefin polymer (COP) film, a cycloolefin copolymer (COC) film, an acrylic film, or the like can be used for the substrate FP_130.

[0242] The layer FP_422 is sandwiched between the substrate FP_130 and the protective layer FP_421. The layer FP_422 has a function of bonding the substrate FP_130 and the protective layer FP_421 together.

[0243] For example, various curable adhesives such as photo-curable adhesives (e.g., ultraviolet curable adhesives), reactive curable adhesives, thermosetting adhesives, and anaerobic adhesives can be used for the layer FP_422. Specifically, epoxy resin, acrylic resin, silicone resin, phenolic resin, polyimide resin, imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) resin, EVA (ethylene vinyl acetate) resin, and the like can be used for the layer FP_422. Two-component resins can also be used. Alternatively, adhesive sheets and the like can be used. In particular, materials with low moisture permeability, such as epoxy resin, are preferred.

[0244] [Functional Layer FL1] The functional layer FL1 includes an insulating layer FL1_210, a conductive layer FL1_302, an insulating layer FL1_204, a conductive layer FL1_303, a conductive layer FL1_306, an insulating layer FL1_207a, an insulating layer FL1_207b, a conductive layer FL1_304, an insulating layer FL1_207c, and a conductive layer FL1_301.

[0245] The conductive layer FL1_302 is provided on the insulating layer FL1_210, and the insulating layer FL1_210 is sandwiched between the conductive layer FL1_302 and a conductive layer FL2_301 of the functional layer FL2 (described later). The conductive layer FL1_302, the conductive layer FL2_301 of the functional layer FL2 (described later), and the insulating layer FL1_210 form a capacitor FL_408.

[0246] Note that by using a material with low light transmittance for the conductive layer FL1_302 and the conductive layer FL2_301, the amount of light incident on the transistor FL2_401 of the functional layer FL2, which will be described later, can be reduced.Moreover, it is more preferable that one or both of the conductive layer FL2_301 and the conductive layer FL1_302 have a region overlapping with the transistor FL2_401 (particularly, a channel formation region).

[0247] The insulating layer FL1_204 is provided over the conductive layer FL1_301. For example, the insulating layer FL1_204 can be formed using one or more of a silicon oxide film, a silicon oxynitride film, an aluminum oxide film, a silicon nitride film, and a silicon nitride oxide film.

[0248] The conductive layer FL1_306 is provided on the insulating layer FL1_204. The conductive layer FL1_306 functions as, for example, a wiring.

[0249] The conductive layer FL1_303 is buried in the insulating layer FL1_204. The conductive layer FL1_303 functions as a plug and connects the conductive layer FL1_306 and the conductive layer FL1_302.

[0250] The insulating layer FL1_207a is provided on the insulating layer FL1_204 and the conductive layer FL1_306.

[0251] The insulating layer FL1_207b is provided on the insulating layer FL1_207a. The insulating layer FL1_207b preferably has low transmittance, particularly for light with energy equal to or greater than the band gap of the semiconductor material of the semiconductor layer of the transistor provided in the functional layer FL2, i.e., for light with a short wavelength. This effectively suppresses fluctuations in the electrical characteristics of the transistor. Furthermore, the reliability of the display device can be improved. For example, when the band gap of the semiconductor material of the semiconductor layer is 3.1 eV, the insulating layer FL1_207b preferably has low transmittance for light with energy equal to or greater than 3.1 eV (wavelength of approximately 400 nm or less). For example, red, green, brown, and black resins have low transmittance for short-wavelength light, and therefore can be suitably used for the insulating layer FL1_207b.

[0252] The insulating layer FL1_207c is provided on the insulating layer FL1_207b.

[0253] The light emitting device FP_406R is provided on the insulating layer FL1_207c.

[0254] [Functional Layer FL2] The functional layer FL2 includes a substrate FL2_110, an element isolation layer FL2_111, a transistor FL2_401, an insulating layer FL2_205, a conductive layer FL2_301, an insulating layer FL2_201, and a conductive layer FL2_303.

[0255] The conductive layer FL2_301 is buried in the insulating layer FL2_201. The conductive layer FL2_301 and the insulating layer FL2_201 are covered with the insulating layer FL1_210.

[0256] The transistor FL2_401 is a transistor having a channel formation region in a substrate FL2_110. For example, a semiconductor substrate such as a single crystal silicon substrate can be used as the substrate FL2_110. The substrate FL2_110 corresponds to the substrate 291 in FIGS. 24A and 24B.

[0257] The element isolation layer FL2_111 is provided between two adjacent transistors FL2_401 and is embedded in the substrate FL2_110.

[0258] <<Transistor FL2_401>> The transistor FL2_401 includes a part of the substrate FL2_110, a conductive layer 401_11, a low-resistance region 401_12, an insulating layer 401_13, and an insulating layer 401_14 (see FIG. 34A). The conductive layer 401_11 functions as a gate electrode. The insulating layer 401_13 is located between the substrate FL2_110 and the conductive layer 401_11 and functions as a gate insulating layer. The low-resistance region 401_12 is a region in which the substrate FL2_110 is doped with impurities and functions as one of a source and a drain. The insulating layer 401_14 covers a side surface of the conductive layer 401_11.

[0259] An insulating layer FL2_205 covers the transistor FL2_401.

[0260] The conductive layer FL2_303 is embedded in the insulating layer FL2_205 and functions as a plug. The conductive layer FL2_303 connects one of the source and drain of the transistor FL2_401 to the conductive layer FL2_301. In other words, the conductive layer FL2_303 connects the transistor FL2_401 to the capacitor FL_408.

[0261] The transistor FL2_401 can form, for example, a pixel circuit.

[0262] Display Device 700B The display device 700B includes a layer FP, a functional layer FL1, a functional layer FL2, and a functional layer FL3 (see FIG. 28). The functional layer FL2 is sandwiched between the functional layer FL3 and the functional layer FL1.

[0263] The display device 700B differs from the display device 700A in that it includes a functional layer FL3 and that the configuration of the functional layer FL2 is different. Here, the parts that differ in configuration will be described in detail, and the above description will be used for parts that can use the same configuration.

[0264] [Functional Layer FL2] The functional layer FL2 includes a substrate FL2_110, a transistor FL2_401, and an element isolation layer FL2_111. For example, a semiconductor substrate such as a single crystal silicon substrate can be used for the substrate FL2_110.

[0265] The transistor FL2_401 has a channel formation region in the substrate FL2_110.

[0266] The functional layer FL2 also includes an insulating layer FL2_112, an insulating layer FL2_113, and a conductive layer FL2_312 on the side of the substrate FL2_110 where the functional layer FL3 is located. The functional layer FL2 also includes a conductive layer FL2_305 and an insulating layer FL2_205c.

[0267] The insulating layer FL2_112 has a function of suppressing, for example, the diffusion of impurities into the substrate FL2_110, which impairs the reliability of the transistor FL2_401. For example, the inorganic insulating film that can be used for the protective layer FP_421 can be used for the insulating layer FL2_112.

[0268] The insulating layer FL2_113 is provided on the side of the insulating layer FL2_112 where the functional layer FL3 is located.

[0269] The conductive layer FL2_312 is provided so as to be embedded in the insulating layer FL2_113. It is preferable that the surface of the conductive layer FL2_312 that contacts the functional layer FL3 and the surface of the insulating layer FL2_113 that contacts the functional layer FL3 are both flattened.

[0270] The conductive layer FL2_312 can be, for example, a metal film containing an element selected from Al, Cr, Cu, Ta, Ti, Mo, and W, or a metal nitride film containing the above-mentioned elements (titanium nitride film, molybdenum nitride film, tungsten nitride film), etc. In particular, copper can be suitably used for the conductive layer FL2_312.

[0271] The conductive layer FL2_305 penetrates the substrate FL2_110 and the insulating layer FL2_112. The conductive layer FL2_305 is connected to the conductive layer FL2_312.

[0272] The insulating layer FL2_205c covers the side surface of the conductive layer FL2_305. The insulating layer FL2_205c has a function of suppressing, for example, the diffusion of impurities into the substrate FL2_110, which may impair the reliability of the transistor FL2_401. For example, the inorganic insulating film that can be used for the protective layer FP_421 can be used for the insulating layer FL2_205c.

[0273] The functional layer FL3 includes a substrate FL3_110, an isolation layer FL3_111, a transistor FL3_401, a conductive layer FL3_303, an insulating layer FL3_205, and an insulating layer FL3_205b. For example, a semiconductor substrate such as a single crystal silicon substrate can be used for the substrate FL3_110.

[0274] The transistor FL3_401 has a channel formation region in the substrate FL3_110.

[0275] The functional layer FL3 includes an insulating layer FL3_205b, an insulating layer FL3_201, and a conductive layer FL3_311 on the side of the insulating layer FL3_205 where the functional layer FL2 is located, and the functional layer FL3 is bonded to the functional layer FL2.

[0276] The insulating layer FL3_205b has a function of suppressing, for example, the diffusion of impurities that impair the reliability of the transistor FL3_401 into the substrate FL3_110. For example, the inorganic insulating film that can be used for the protective layer FP_421 can be used for the insulating layer FL3_205b.

[0277] The insulating layer FL3_201 is provided on the side of the insulating layer FL3_205b where the functional layer FL2 is located.

[0278] The conductive layer FL3_311 is provided so as to be embedded in the insulating layer FL3_201. It is preferable that the surface of the conductive layer FL3_311 that contacts the functional layer FL2 and the surface of the insulating layer FL3_201 that contacts the functional layer FL2 are both flattened.

[0279] By improving the flatness of the surface formed by the conductive layer FL3_311 and the insulating layer FL3_201 and the flatness of the surface formed by the conductive layer FL2_312 and the insulating layer FL2_113, the conductive layer FL3_311 and the conductive layer FL2_312 can be bonded together well.

[0280] It is preferable that the conductive layer FL2_312 be made of the same conductive material as the conductive layer FL3_311. In particular, it is preferable that copper be used for the conductive layers FL3_311 and FL2_312. This allows for the application of Cu-Cu direct bonding technology (technology that achieves electrical conductivity by connecting Cu (copper) pads together). The conductive layer FL2_312 is bonded to the conductive layer FL3_311, and the functional layers FL2 and FL3 are connected.

[0281] Display Device 700C The display device 700C includes a layer FP, a functional layer FL1, a functional layer FL2, and a functional layer FL3 (see FIG. 29). The functional layer FL2 is sandwiched between the functional layer FL3 and the functional layer FL1.

[0282] The display device 700C differs from the display device 700B in that the functional layer FL2 does not include the insulating layer FL2_113, the functional layer FL3 does not include the insulating layer FL3_201, the conductive layer FL3_311 and the conductive layer FL2_312 are connected using a bump FL_411, and the functional layer FL2 and the functional layer FL3 are bonded together using an adhesive layer FL_412. Here, the parts that differ in configuration will be described in detail, and the above description will be used for parts that can use the same configuration.

[0283] The bump FL_411 is sandwiched between the conductive layer FL3_311 and the conductive layer FL2_312. For example, a conductive material including gold (Au), nickel (Ni), indium (In), tin (Sn), etc. may be used for the bump FL_411. Alternatively, for example, solder may be used for the bump FL_411.

[0284] The adhesive layer FL_412 is sandwiched between the functional layer FL2 and the functional layer FL3. The adhesive layer FL_412 has a function of bonding the functional layer FL2 and the functional layer FL3 together.

[0285] <Display Device 700D> The display device 700D includes a layer FP, a functional layer FL1, and a functional layer FL2 (see FIG. 30).

[0286] The display device 700D differs from the display device 700A in that the configuration of the functional layer FL2 is different. Here, the different configurations will be described in detail, and the above description will be used for the parts that can use the same configuration.

[0287] [Functional Layer FL2] The functional layer FL2 includes a substrate FL2_120, an insulating layer FL2_202a, an insulating layer FL2_202b, a transistor FL2_402, an insulating layer FL2_208, an insulating layer FL2_203a, an insulating layer FL2_203b, and an insulating layer FL2_204.

[0288] The substrate FL2_120 may be an insulating substrate or a semiconductor substrate. The substrate FL2_120 corresponds to the substrate 291 in FIGS. 24A and 24B.

[0289] The insulating layer FL2_202a is provided over the substrate FL2_120. The insulating layer FL2_202a has a function of suppressing diffusion of impurities (e.g., water and hydrogen) that may impair the reliability of the transistor FL2_402 into the transistor FL2_402. The insulating layer FL2_202a also functions as a barrier layer that prevents oxygen from being desorbed from the semiconductor layer 402_21 into the insulating layer FL2_202a. For example, a film through which hydrogen or oxygen is less likely to diffuse than a silicon oxide film can be used for the insulating layer FL2_202a. Specifically, an aluminum oxide film, a hafnium oxide film, a silicon nitride film, or the like can be used for the insulating layer FL2_202a.

[0290] The transistor FL2_402 includes a semiconductor layer 402_21, an insulating layer 402_23, a conductive layer 402_24, a pair of conductive layers 402_25, an insulating layer FL2_202b, and a conductive layer 402_27 (see FIG. 34B). The transistor FL2_402 is an OS transistor in which an oxide semiconductor is used for a semiconductor layer in which a channel is formed.

[0291] The conductive layer 402_27 is provided over the insulating layer FL2_202a. The conductive layer 402_27 functions as a first gate electrode of the transistor FL2_402.

[0292] The insulating layer FL2_202b covers the conductive layer 402_27. The top surface of the insulating layer FL2_202b is preferably planarized. An oxide insulating film such as a silicon oxide film is preferably used for at least a portion of the insulating layer FL2_202b that is in contact with the semiconductor layer 402_21. Note that part of the insulating layer FL2_202b functions as a first gate insulating layer.

[0293] The semiconductor layer 402_21 is provided over the insulating layer FL2_202b. For example, an oxide semiconductor film can be used for the semiconductor layer 402_21.

[0294] The crystallinity of a semiconductor material used for a semiconductor layer of a transistor is not particularly limited, and any of an amorphous semiconductor, a single-crystal semiconductor, and a semiconductor having crystallinity other than single crystal (a microcrystalline semiconductor, a polycrystalline semiconductor, or a semiconductor having a crystalline region in part) may be used. The use of a single-crystal semiconductor or a crystalline semiconductor is preferable because it can suppress deterioration of transistor characteristics.

[0295] The band gap of the metal oxide used for the semiconductor layer of the transistor is preferably 2 eV or more, more preferably 2.5 eV or more. Use of a metal oxide with a wide band gap can reduce the off-state current of the OS transistor.

[0296] The metal oxide preferably contains at least indium or zinc, and more preferably contains indium and zinc. For example, the metal oxide preferably contains indium, M (M is one or more selected from gallium, aluminum, yttrium, tin, silicon, boron, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, and cobalt), and zinc.

[0297] Alternatively, the semiconductor layer of the transistor may contain silicon, such as amorphous silicon or crystalline silicon (such as low-temperature polysilicon or single-crystal silicon).

[0298] Examples of metal oxides that can be used in the semiconductor layer include indium oxide, gallium oxide, and zinc oxide. The metal oxide preferably contains two or three elements selected from indium, element M, and zinc. The element M is one or more elements selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium. In particular, the element M is preferably one or more elements selected from aluminum, gallium, yttrium, and tin.

[0299] When a metal oxide is used for the semiconductor layer, the metal oxide is preferably formed by a sputtering method or an ALD method. When the metal oxide is formed by a sputtering method, productivity and film density can be increased. When the metal oxide is formed by an ALD method, film coverage can be increased.

[0300] In particular, as the metal oxide used in the semiconductor layer, it is preferable to use an oxide containing indium, gallium, and zinc (also referred to as IGZO). Alternatively, it is preferable to use an oxide containing indium, tin, and zinc (also referred to as ITZO (registered trademark)). Alternatively, it is preferable to use an oxide containing indium, gallium, tin, and zinc. Alternatively, it is preferable to use an oxide containing indium, aluminum, and zinc (also referred to as IAZO). Alternatively, it is preferable to use an oxide containing indium, aluminum, gallium, and zinc (also referred to as IAGZO).

[0301] When the metal oxide used in the semiconductor layer is an In-M-Zn oxide, the atomic ratio of In in the In-M-Zn oxide is preferably equal to or greater than the atomic ratio of M. Examples of atomic ratios of metal elements in such an In-M-Zn oxide include a composition of In:M:Zn=1:1:1 or thereabouts, In:M:Zn=1:1:1 or thereabouts, In:M:Zn=1:1:1.2 or thereabouts, In:M:Zn=1:3:2 or thereabouts, In:M:Zn=1:3:4 or thereabouts, In:M:Zn=2:1:3 or thereabouts, In:M:Zn=3:1:2 or thereabouts, In:M:Zn=4:2: Examples of such compositions include a composition of In:M:Zn=4:2:4.1 or a composition of In:M:Zn=5:1:3 or a composition of In:M:Zn=5:1:6 or a composition of In:M:Zn=5:1:7 or a composition of In:M:Zn=5:1:8 or a composition of In:M:Zn=6:1:6 or a composition of In:M:Zn=5:2:5 or a composition of In:M:Zn=5:2:5. Note that a composition of a similar ratio includes a range of ±30% of the desired atomic ratio.

[0302] Furthermore, it is preferable to use gallium or tin as the element M. Note that the element M may be a combination of two or more of the above elements. It is also preferable to use In:M:Zn=40:1:10 or a metal oxide thereof in the semiconductor layer. Specifically, it is preferable to use In:Sn:Zn=40:1:10 or a metal oxide thereof in the semiconductor layer.

[0303] For example, when describing a composition having an atomic ratio of In:Ga:Zn=4:2:3 or thereabout, this includes a case where, when In is taken as 4, Ga is 1 to 3 and Zn is 2 to 4. Furthermore, when describing a composition having an atomic ratio of In:Ga:Zn=5:1:6 or thereabout, this includes a case where, when In is taken as 5, Ga is more than 0.1 and 2 or less and Zn is 5 to 7. Furthermore, when describing a composition having an atomic ratio of In:Ga:Zn=1:1:1 or thereabout, this includes a case where, when In is taken as 1, Ga is more than 0.1 and 2 or less and Zn is more than 0.1 and 2 or less.

[0304] The semiconductor layer may also have two or more metal oxide layers with different compositions. For example, a stacked structure of a first metal oxide layer having an In:M:Zn=1:3:4 (atomic ratio) or a composition similar thereto and a second metal oxide layer having an In:M:Zn=1:1:1 (atomic ratio) or a composition similar thereto provided on the first metal oxide layer is preferably used. Gallium or aluminum is particularly preferably used as the element M.

[0305] Alternatively, for example, a stacked structure of any one selected from indium oxide, indium gallium oxide, and IGZO and any one selected from IAZO, IAGZO, and ITZO (registered trademark) may be used.

[0306] Examples of crystalline oxide semiconductors include c-axis-aligned crystalline (CAAC)-OS, nanocrystalline (nc)-OS, and the like.

[0307] An OS transistor has significantly higher field-effect mobility than a transistor using amorphous silicon. Furthermore, an OS transistor has significantly lower source-drain leakage current (also referred to as off-state current) in an off state, and can hold charge accumulated in a capacitor connected in series with the transistor for a long period of time. Furthermore, the use of an OS transistor can reduce the power consumption of a display panel.

[0308] Furthermore, to increase the emission luminance of a light-emitting device included in a pixel circuit, it is necessary to increase the amount of current flowing through the light-emitting device. To achieve this, it is necessary to increase the source-drain voltage of a driving transistor included in the pixel circuit. Since an OS transistor has a higher source-drain withstand voltage than a Si transistor, a high voltage can be applied between the source and drain of the OS transistor. Therefore, by using an OS transistor as the driving transistor included in a pixel circuit, it is possible to increase the amount of current flowing through the light-emitting device and increase the emission luminance of the light-emitting device.

[0309] Furthermore, when the transistor operates in the saturation region, the change in source-drain current of an OS transistor is smaller than that of a Si transistor in response to a change in gate-source voltage. Therefore, by using an OS transistor as a driving transistor included in a pixel circuit, the current flowing between the source and drain can be precisely controlled by changing the gate-source voltage, thereby controlling the amount of current flowing through the light-emitting device. This allows for a larger number of gray levels to be displayed in the pixel circuit.

[0310] Furthermore, in terms of the saturation characteristics of the current that flows when a transistor operates in the saturation region, an OS transistor can pass a more stable current (saturation current) than a Si transistor, even when the source-drain voltage gradually increases. Therefore, by using an OS transistor as a driving transistor, a stable current can be passed through a light-emitting device, even when the current-voltage characteristics of an EL device vary. In other words, when an OS transistor operates in the saturation region, the source-drain current of the OS transistor remains almost unchanged even when the source-drain voltage increases, thereby stabilizing the light-emitting luminance of the light-emitting device.

[0311] As described above, by using an OS transistor for a driving transistor included in a pixel circuit, it is possible to achieve "reduced power consumption," "increased light emission luminance," "multiple gray levels," "suppressed variations in light-emitting devices," and the like.

[0312] The pair of conductive layers 402_25 are provided over and in contact with the semiconductor layer 402_21 and function as a source electrode and a drain electrode.

[0313] The insulating layer FL2_208 covers the top and side surfaces of the pair of conductive layers 402_25 and the side surfaces of the semiconductor layer 402_21. The insulating layer FL2_208 has a function of suppressing diffusion of impurities (e.g., water and hydrogen) that may impair the reliability of the transistor FL2_402 into the transistor FL2_402. The insulating layer FL2_208 also functions as a barrier layer that prevents oxygen from being released from the semiconductor layer 402_21 to the insulating layer FL2_208. For example, a film through which hydrogen or oxygen is less likely to diffuse than a silicon oxide film can be used for the insulating layer FL2_208. Note that an insulating film similar to the insulating layer FL2_202a can be used for the insulating layer FL2_208.

[0314] The insulating layer FL2_203a is provided over the insulating layer FL2_208. The insulating layer FL2_203a and the insulating layer FL2_208 have openings that reach the semiconductor layer 402_21. The insulating layer FL2_203a functions as an interlayer insulating layer.

[0315] Inside the opening, the insulating layer 402_23 is in contact with the side surface of the insulating layer FL2_208, the side surface of the insulating layer FL2_203a, the side surface of the conductive layer 402_25, and the top surface of the semiconductor layer 402_21. Note that the insulating layer 402_23 functions as a second gate insulating layer.

[0316] The conductive layer 402_24 is in contact with the insulating layer 402_23 and is embedded in the opening. Note that the conductive layer 402_24 functions as a second gate electrode. Note that the top surface of the conductive layer 402_24 is substantially flush with the top surfaces of the insulating layer 402_23 and the insulating layer FL2_203a.

[0317] The insulating layer FL2_203b covers the top surface of the conductive layer 402_24, the top surface of the insulating layer 402_23, and the top surface of the insulating layer FL2_203a. The insulating layer FL2_203b has a function of suppressing diffusion of impurities (e.g., water and hydrogen) that may impair the reliability of the transistor FL2_402 into the transistor FL2_402. Note that an insulating film similar to that of the insulating layer FL2_202a can be used for the insulating layer FL2_203b.

[0318] The insulating layer FL2_204 covers the insulating layer FL2_203b and functions as an interlayer insulating layer.

[0319] The functional layer FL2 also includes a conductive layer FL2_303. The conductive layer FL2_303 is embedded in the insulating layers FL2_203a, FL2_203b, and FL2_204. The conductive layer FL2_303 connects one of the pair of conductive layers 402_25 to the conductive layer FL2_301. In other words, the conductive layer FL2_303 connects the transistor FL2_402 to the capacitor FL_408.

[0320] The transistor FL2_402 can form, for example, a pixel circuit.

[0321] The conductive layer FL2_303 includes a conductive layer FL2_303a and a conductive layer FL2_303b. The conductive layer FL2_303a covers the side surfaces of the openings of the insulating layer FL2_204, the insulating layer FL2_203b, the insulating layer FL2_203a, and the insulating layer FL2_208 and a part of the top surface of the conductive layer 402_25. The conductive layer FL2_303b is in contact with the top surface of the conductive layer FL2_303a. A conductive material through which hydrogen and oxygen do not easily diffuse can be preferably used for the conductive layer FL2_303a.

[0322] Display Device 700E The display device 700E includes a layer FP, a functional layer FL1, a functional layer FL2, and a functional layer FL3 (see FIG. 31). The functional layer FL2 is sandwiched between the functional layer FL3 and the functional layer FL1.

[0323] The display device 700E differs from the display device 700D in that the functional layer FL2 includes a functional layer FL3 instead of the substrate FL2_120. Here, the parts that differ in configuration will be described in detail, and the above description will be used for parts that can use the same configuration.

[0324] Note that although a structure in which two stacked layers each include a transistor having an oxide semiconductor is illustrated in this embodiment, the present invention is not limited to this. For example, a structure in which three stacked layers each include a transistor having an oxide semiconductor may also be used.

[0325] [Functional Layer FL2] The functional layer FL2 is formed on an insulating layer FL3_206 of the functional layer FL3, which will be described later. Furthermore, an insulating layer FL2_202a covers the insulating layer FL3_206, which will be described later.

[0326] [Functional Layer FL3] The functional layer FL3 includes a substrate FL3_120, insulating layers FL3_202a and FL3_202b, a transistor FL3_402, insulating layers FL3_208, FL3_203a and FL3_203b, and insulating layers FL3_204, conductive layers FL3_303 and FL3_206. The conductive layer FL3_303 includes conductive layers FL3_303a and FL3_303b.

[0327] For example, the same structure as the functional layer FL2 can be used for the functional layer FL3. Also, the same structure as the transistor FL2_402 can be applied to the transistor FL3_402.

[0328] <Display Device 700F1> The display device 700F1 includes a layer FP, a functional layer FL1, a functional layer FL2, and a functional layer FL3 (see FIG. 32). The functional layer FL2 is sandwiched between the functional layer FL3 and the functional layer FL1.

[0329] The display device 700F1 differs from the display device 700E in that the functional layer FL3 includes a transistor having a channel formation region in the substrate FL3_110, instead of a transistor including an oxide semiconductor in a semiconductor layer in which a channel is formed. Here, the parts that differ in configuration will be described in detail, and the above description will be used for parts that can use the same configuration.

[0330] [Functional Layer FL3] The functional layer FL3 includes a substrate FL3_110, an isolation layer FL3_111, a transistor FL3_401, a conductive layer FL3_303, and an insulating layer FL3_205. For example, a semiconductor substrate such as a single crystal silicon substrate can be used for the substrate FL3_110. For an explanation of these components, please refer to the explanation of the functional layer FL3 of the display device 700B.

[0331] The functional layer FL3 also includes a conductive layer FL3_307, an insulating layer FL3_207, and a conductive layer FL3_308.

[0332] The conductive layer FL3_307 is provided over the insulating layer FL3_205 and functions as a wiring.

[0333] The insulating layer FL3_207 covers the conductive layer FL3_307.

[0334] The conductive layer FL3_308 is provided over the insulating layer FL3_207 and functions as a wiring.

[0335] The transistor FL3_401 of the functional layer FL3 can configure, for example, a pixel circuit or a drive circuit (gate line drive circuit, source line drive circuit) for driving the pixel circuit.

[0336] The transistor FL3_401 in the functional layer FL3 and the transistor FL2_402 in the functional layer FL2 can form various circuits such as an arithmetic circuit or a memory circuit.

[0337] With this configuration, not only pixel circuits but also driver circuits can be formed directly below the light-emitting devices, and the display device can be made smaller than when driver circuits are provided around the display area.

[0338] <Display Device 700F2> The display device 700F2 includes a layer FP, a functional layer FL1, a functional layer FL2, and a functional layer FL3 (see FIG. 33). The functional layer FL2 is sandwiched between the functional layer FL3 and the functional layer FL1.

[0339] The display device 700F2 differs from the display device 700F1 in the configuration of the transistors included in the functional layer FL2. Here, the different configurations will be described in detail, and the above description will be used for the parts that can use the same configurations.

[0340] [Functional Layer FL2] The functional layer FL2 includes an insulating layer FL2_202a, an insulating layer FL2_209, a transistor FL2_403, an insulating layer FL2_203a, an insulating layer FL2_203b, and an insulating layer FL2_204. An insulating layer FL3_206 covers the functional layer FL3. Furthermore, the insulating layer FL2_202a covers the insulating layer FL3_206.

[0341] <<Transistor FL2_403>> The transistor FL2_403 includes a conductive layer 403_25a, an insulating layer FL2_209, a conductive layer 403_25b, a semiconductor layer 403_21, an insulating layer FL2_202b, and a conductive layer 403_27 (see FIG. 34C). In the transistor FL2_403, the source electrode and the drain electrode are located at different heights relative to the surface where the transistor FL2_403 is formed (here, the top surface of the insulating layer FL2_202a), and a drain current flows perpendicular to or approximately perpendicular to the top surface of the insulating layer FL2_202a. In other words, the channel length direction can be said to have a component in the height direction (vertical direction). The transistor FL2_403 can also be called a VFET (Vertical Field Effect Transistor), a vertical transistor, a vertical channel transistor, or a vertical channel transistor.

[0342] The channel length L of the transistor FL2_403 can be controlled by the thickness of an insulating layer (here, the insulating layer FL2_209) sandwiched between the source electrode and the drain electrode. Therefore, the transistor FL2_403 can be accurately fabricated to have a channel length L shorter than the minimum exposure dimension of an exposure device used to fabricate the transistor (e.g., 60 nm or less, 50 nm or less, 40 nm or less, 30 nm or less, 20 nm or less, or 10 nm or less, and 1 nm or more, or 5 nm or more). By shortening the channel length L of the transistor FL2_403, the on-state current can be increased. This allows for a display device that operates at high speed.

[0343] The transistor FL2_403 can have a source electrode, a semiconductor layer, and a drain electrode that are stacked on top of each other. Therefore, compared to a so-called planar transistor, in which these are arranged in a plane, the area occupied can be significantly reduced. By applying a VFET to the pixel circuit of a display device, the area occupied by the pixel circuit can be reduced, resulting in a high-resolution display device.

[0344] 34D , by forming the opening FL2_490 to have a circular or approximately circular shape in a top view, the semiconductor layer 403_21, the insulating layer FL2_202b, and the conductive layer 403_27 are provided concentrically. This makes the distance between the conductive layer 403_27 and the semiconductor layer 403_21 approximately uniform, allowing a gate electric field to be applied to the semiconductor layer 403_21 approximately uniformly.

[0345] The side surface of the conductive layer 403_27 faces the side surface of the semiconductor layer 403_21 with the insulating layer FL2_202b interposed therebetween. That is, in a top view, the entire periphery of the semiconductor layer 403_21 forms a channel formation region. In this case, for example, the channel width W of the transistor FL2_403 is determined by the length of the periphery of the semiconductor layer 403_21. That is, the channel width W of the transistor FL2_403 can be determined by the maximum width of the opening FL2_490 (the maximum diameter if the opening FL2_490 is circular in a top view). In FIGS. 34C and 34D, the maximum width D of the opening FL2_490 is indicated by a double-headed arrow in a solid line. In FIG. 34D, the channel width W of the transistor FL2_403 is indicated by a double-headed arrow in a dashed line. Increasing the maximum width D of the opening FL2_490 increases the channel width per unit area, thereby increasing the on-current.

[0346] When the opening FL2_490 is formed using photolithography, the maximum width D of the opening FL2_490 is equal to or greater than the minimum exposure dimension of the exposure device. The maximum width D of the opening FL2_490 is determined by the film thicknesses of the semiconductor layer 403_21, the insulating layer FL2_202b, and the conductive layer 403_27 provided in the opening FL2_490. The maximum width D of the opening FL2_490 is, for example, 5 nm or more, 10 nm or more, or 20 nm or more, and is preferably 100 nm or less, 60 nm or less, 50 nm or less, 40 nm or less, or 30 nm or less. When the opening FL2_490 is circular in top view, the maximum width D of the opening FL2_490 corresponds to the diameter of the opening FL2_490, and the channel width W can be calculated as "D × π."

[0347] The configuration of the transistor FL2_403 shown here can also be applied to other configuration examples.

[0348] The conductive layer 403_25a is provided over the insulating layer FL2_202a. Note that the conductive layer 403_25a functions as one of a source electrode and a drain electrode.

[0349] The insulating layer FL2_209 is provided over the insulating layer FL2_202a and the conductive layer 403_25a. For example, an inorganic insulating film such as an oxide insulating film, a nitride insulating film, an oxynitride insulating film, or a nitride oxide insulating film can be used for the insulating layer FL2_209. Specifically, the insulating layer FL2_209 can be one or more of a silicon oxide film, a silicon oxynitride film, an aluminum oxide film, a silicon nitride film, and a silicon nitride oxide film.

[0350] The conductive layer 403_25b is provided over the insulating layer FL2_209. An opening FL2_490 reaching the conductive layer 403_25a is provided in the conductive layer 403_25b and the insulating layer FL2_209. The conductive layer 403_25b functions as the other of the source and drain electrodes.

[0351] The semiconductor layer 403_21 is in contact with the side surface of the insulating layer FL2_209, the side surface of the conductive layer 403_25b, and the top surface of the conductive layer 403_25b inside the opening FL2_490. Note that a region of the semiconductor layer 403_21 in contact with the conductive layer 403_25a functions as one of the source region and the drain region, and a region of the semiconductor layer 403_21 in contact with the conductive layer 403_25b functions as the other of the source region and the drain region. In the semiconductor layer 403_21, a channel formation region is located between the source region and the drain region. For example, an oxide semiconductor film can be used for the semiconductor layer 403_21.

[0352] The insulating layer FL2_202b is provided over the semiconductor layer 403_21. Note that the insulating layer FL2_202b functions as a first gate insulating layer.

[0353] The conductive layer 403_27 is in contact with the insulating layer FL2_202b and has a region overlapping with the semiconductor layer 403_21. At least a part of the conductive layer 403_27 is embedded inside the opening FL2_490. Note that the conductive layer 403_27 functions as a first gate electrode.

[0354] The insulating layer FL2_203a is provided over the insulating layer FL2_202b and the conductive layer 403_27. The insulating layer FL2_203a functions as an interlayer insulating layer.

[0355] The insulating layer FL2_203b covers the top surface of the conductive layer 403_27 and the top surface of the insulating layer FL2_203a. The insulating layer FL2_203b has a function of suppressing diffusion of impurities (e.g., water and hydrogen) that may impair the reliability of the transistor FL2_403 into the transistor FL2_403. Note that an insulating film similar to that of the insulating layer FL2_202a can be used for the insulating layer FL2_203b.

[0356] The insulating layer FL2_204 covers the insulating layer FL2_203b and functions as an interlayer insulating layer.

[0357] The functional layer FL2 also includes a conductive layer FL2_303. The conductive layer FL2_303 is embedded in the insulating layers FL2_203a, FL2_203b, and FL2_204. The conductive layer FL2_303 connects the conductive layer 403_25b and the conductive layer FL2_301 (see FIG. 33). In other words, the conductive layer FL2_303 connects the transistor FL2_402 to the capacitor FL_408.

[0358] The transistor FL2_402 can be used to configure, for example, a pixel circuit.

[0359] The conductive layer FL2_303 includes a conductive layer FL2_303a and a conductive layer FL2_303b. The conductive layer FL2_303a covers the side surfaces of the openings of the insulating layer FL2_204, the insulating layer FL2_203b, the insulating layer FL2_203a, and the insulating layer FL2_208, and a part of the top surface of the conductive layer 403_25b. The conductive layer FL2_303b is in contact with the top surface of the conductive layer FL2_303a. Note that a conductive material through which hydrogen and oxygen do not easily diffuse can be suitably used for the conductive layer FL2_303a.

[0360] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0361] Embodiment 4 In this embodiment, electronic devices of one embodiment of the present invention will be described with reference to FIGS.

[0362] The electronic devices of this embodiment include the display device of one embodiment of the present invention in their display portions. The display device of one embodiment of the present invention can easily achieve high definition and high resolution. Therefore, the display device of one embodiment of the present invention can be used in the display portions of various electronic devices.

[0363] Examples of electronic devices include electronic devices with relatively large screens such as television sets, desktop or notebook computers, computer monitors, digital signage, large game machines such as pachinko machines, as well as digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, personal digital assistants, and sound playback devices.

[0364] In particular, the display device of one embodiment of the present invention can be suitably used in electronic devices having a relatively small display area because it can increase the resolution. Examples of such electronic devices include wristwatch-type and bracelet-type information terminals (wearable devices), and head-mounted wearable devices such as VR devices such as head-mounted displays, AR glasses-type devices, and MR devices.

[0365] The display device of one embodiment of the present invention preferably has an extremely high resolution such as HD (1280 × 720 pixels), FHD (1920 × 1080 pixels), WQHD (2560 × 1440 pixels), WQXGA (2560 × 1600 pixels), 4K (3840 × 2160 pixels), or 8K (7680 × 4320 pixels). A resolution of 4K, 8K, or higher is particularly preferable. Furthermore, the pixel density (resolution) of the display device of one embodiment of the present invention is preferably 100 ppi or higher, more preferably 300 ppi or higher, more preferably 500 ppi or higher, more preferably 1000 ppi or higher, more preferably 2000 ppi or higher, more preferably 3000 ppi or higher, more preferably 5000 ppi or higher, and even more preferably 7000 ppi or higher. By using a display device having either or both of high resolution and high definition, it is possible to further enhance the sense of realism and depth. Furthermore, the screen ratio (aspect ratio) of the display device of one embodiment of the present invention is not particularly limited. For example, the display device can support various screen ratios such as 1:1 (square), 4:3, 16:9, and 16:10.

[0366] The electronic device of this embodiment may also be configured to have a sensor (including the function of sensing, detecting, or measuring force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared rays).

[0367] The electronic device of the present embodiment can have various functions, such as a function to display various information (still images, videos, text images, etc.) on a display unit, a touch panel function, a function to display a calendar, date, time, etc., a function to execute various software (programs), a wireless communication function, a function to read out programs or data recorded on a recording medium, etc.

[0368] 35A to 35D , examples of wearable devices that can be worn on the head are described. These wearable devices have at least one of the following functions: a function to display AR content, a function to display VR content, a function to display SR content, and a function to display MR content. By having an electronic device with the function to display at least one of AR, VR, SR, and MR content, it is possible to enhance the sense of immersion felt by the user.

[0369] 35A and 35B each include a pair of display panels 8751, a pair of housings 8721, a communication unit (not shown), a pair of mounting units 8723, a control unit (not shown), an imaging unit (not shown), a pair of optical members 8753, a frame 8757, and a pair of nose pads 8758. Note that the display panel 8751 is omitted in Fig. 35B.

[0370] The display device of one embodiment of the present invention can be applied to the display panel 8751. Therefore, the electronic device can provide an extremely high-definition display.

[0371] The electronic device 8700A and the electronic device 8700B can each project an image displayed on the display panel 8751 onto a display region 8756 of the optical member 8753. Because the optical member 8753 is translucent, the user can see the image displayed in the display region superimposed on a transmitted image visually recognized through the optical member 8753. Therefore, the electronic device 8700A and the electronic device 8700B are each electronic devices capable of AR display.

[0372] The electronic devices 8700A and 8700B can be provided with cameras capable of capturing images of the front as imaging units. The electronic devices 8700A and 8700B can also be provided with an acceleration sensor such as a gyro sensor to detect the orientation of the user's head and display an image corresponding to the orientation in the display region 8756.

[0373] The communication unit has a wireless communication device, and can supply a video signal, etc. Instead of or in addition to the wireless communication device, a connector can be provided to which a cable through which a video signal and a power supply potential can be connected.

[0374] The electronic device 8700A and the electronic device 8700B are provided with a battery (not shown) and can be charged wirelessly and / or by wire.

[0375] The housing 8721 can be provided with a touch sensor module. The touch sensor module has a function of detecting that the outer surface of the housing 8721 is touched. The touch sensor module can detect a tap operation, a slide operation, or the like by a user and perform various processes. For example, a tap operation can perform processes such as pausing or resuming a video, and a slide operation can perform processes such as fast-forwarding or fast-rewinding. Furthermore, providing a touch sensor module on each of the two housings 8721 can widen the range of operations.

[0376] Various touch sensors can be used as the touch sensor module. For example, various types of touch sensors can be used, such as a capacitance type, a resistive film type, an infrared type, an electromagnetic induction type, a surface acoustic wave type, and an optical type. In particular, it is preferable to use a capacitance type or an optical type sensor in the touch sensor module.

[0377] When an optical touch sensor is used, a photoelectric conversion device (also called a photoelectric conversion element) can be used as the light receiving device. The active layer of the photoelectric conversion device can be made of either or both of an inorganic semiconductor and an organic semiconductor.

[0378] An electronic device 8800A shown in Fig. 35C and an electronic device 8800B shown in Fig. 35D each include a pair of display units 8820, a housing 8821, a communication unit 8822, a pair of attachment units 8823, a control unit 8824, a pair of imaging units 8825, and a pair of lenses 8832. Note that the display unit 8820, the communication unit 8822, and the imaging unit 8825 are omitted in Fig. 35D.

[0379] The display device of one embodiment of the present invention can be applied to the display portion 8820. Therefore, an electronic device capable of displaying images with extremely high definition can be provided. This allows a user to feel a high sense of immersion.

[0380] The display portion 8820 is provided inside the housing 8821 at a position where it can be viewed through a lens 8832. By displaying different images on the pair of display portions 8820, three-dimensional display using parallax can be achieved.

[0381] The electronic device 8800A and the electronic device 8800B can each be considered an electronic device for VR. A user wearing the electronic device 8800A or the electronic device 8800B can view an image displayed on the display portion 8820 through the lens 8832.

[0382] The electronic device 8800A and the electronic device 8800B preferably have a mechanism that can adjust the left and right positions of the lens 8832 and the display portion 8820 so that the positions are optimal for the user's eyes. Also, the electronic device 8800A and the electronic device 8800B preferably have a mechanism that can adjust the focus by changing the distance between the lens 8832 and the display portion 8820.

[0383] The attachment unit 8823 allows the user to attach the electronic device 8800A or the electronic device 8800B to the head. Note that in Fig. 35C and other figures, the attachment unit 8823 has an example shape similar to the temples of glasses, but is not limited to this. The attachment unit 8823 may have any shape that can be worn by the user, such as a helmet or band.

[0384] The imaging unit 8825 has a function of acquiring external information. Data acquired by the imaging unit 8825 can be output to the display unit 8820. An image sensor can be used for the imaging unit 8825. Furthermore, a plurality of cameras can be provided to support a plurality of angles of view, such as a telephoto lens and a wide angle lens.

[0385] Note that although an example including the imaging unit 8825 is shown here, a distance measuring sensor (hereinafter also referred to as a detection unit) capable of measuring the distance to an object may be provided. That is, the imaging unit 8825 is one mode of the detection unit. For example, an image sensor or a range image sensor such as a LIDAR (Light Detection and Ranging) can be used as the detection unit. By using an image obtained by the camera and an image obtained by the range image sensor, more information can be obtained, enabling more accurate gesture operations.

[0386] The electronic device 8800A may also have a vibration mechanism that functions as bone conduction earphones. For example, a configuration having such a vibration mechanism can be applied to one or more of the display unit 8820, the housing 8821, and the wearing unit 8823. This allows a user to enjoy video and audio simply by wearing the electronic device 8800A, without the need for separate audio equipment such as headphones, earphones, or speakers.

[0387] The electronic device 8800A and the electronic device 8800B may each have an input terminal to which a cable for supplying a video signal from a video output device or the like and power for charging a battery provided in the electronic device can be connected.

[0388] The electronic device of one embodiment of the present invention can also have a function of wireless communication with an earphone 8750. The earphone 8750 includes a communication unit (not shown) and has a wireless communication function. The earphone 8750 can receive information (e.g., audio data) from the electronic device through the wireless communication function. For example, the electronic device 8700A shown in FIG. 35A has a function of transmitting information to the earphone 8750 through the wireless communication function. Furthermore, for example, the electronic device 8800A shown in FIG. 35C has a function of transmitting information to the earphone 8750 through the wireless communication function.

[0389] The electronic device may have an earphone unit. The electronic device 8700B shown in Fig. 35B has an earphone unit 8727. For example, the earphone unit 8727 and the control unit may be connected to each other by wire. Part of the wiring connecting the earphone unit 8727 and the control unit may be disposed inside the housing 8721 or the attachment unit 8723.

[0390] 35D includes an earphone unit 8827. For example, the earphone unit 8827 and the control unit 8824 can be configured to be connected to each other by wire. A portion of the wiring connecting the earphone unit 8827 and the control unit 8824 may be disposed inside the housing 8821 or the attachment unit 8823. The earphone unit 8827 and the attachment unit 8823 may also have magnets. This allows the earphone unit 8827 to be fixed to the attachment unit 8823 by magnetic force, which is preferable as it makes storage easier.

[0391] The electronic device may have an audio output terminal to which earphones or headphones can be connected. The electronic device may also have one or both of an audio input terminal and an audio input mechanism. For example, a sound collection device such as a microphone can be used as the audio input mechanism. By having the audio input mechanism, the electronic device may be endowed with the functionality of a so-called headset.

[0392] As described above, the electronic devices of one embodiment of the present invention are suitable for both glasses (such as the electronic devices 8700A and 8700B) and goggles (such as the electronic devices 8800A and 8800B).

[0393] An electronic device according to one embodiment of the present invention can transmit information to an earphone via a wired or wireless connection.

[0394] The electronic device 6500 shown in FIG. 36A is a portable information terminal that can be used as a smartphone.

[0395] The electronic device 6500 includes a housing 6501, a display portion 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, and a light source 6508. The display portion 6502 has a touch panel function.

[0396] The display device of one embodiment of the present invention can be applied to the display portion 6502 .

[0397] FIG. 36B is a schematic cross-sectional view including the end of the housing 6501 on the microphone 6506 side.

[0398] A light-transmitting protective member 6510 is provided on the display surface side of the housing 6501, and a display panel 6511, optical members 6512, a touch sensor panel 6513, a printed circuit board 6517, a battery 6518, etc. are arranged in the space surrounded by the housing 6501 and the protective member 6510.

[0399] A display panel 6511, an optical member 6512, and a touch sensor panel 6513 are fixed to the protective member 6510 by adhesive layers (not shown).

[0400] In a region outside the display portion 6502, a part of the display panel 6511 is folded back, and an FPC 6515 is connected to the folded back part. An IC 6516 is mounted on the FPC 6515. The FPC 6515 is connected to a terminal provided on a printed circuit board 6517.

[0401] The display device of one embodiment of the present invention can be applied to the display panel 6511. In particular, when a resin film is used for the substrate of the display panel 6511, an extremely lightweight electronic device can be realized. Furthermore, since the display panel 6511 is extremely thin, a large-capacity battery 6518 can be mounted thereon while suppressing the thickness of the electronic device. Furthermore, by folding back a part of the display panel 6511 and arranging a connection portion with the FPC 6515 on the back side of the pixel portion, an electronic device with a narrow frame can be realized.

[0402] 36C shows an example of a television set. A television set 7100 has a display portion 7000 built into a housing 7101. Here, the housing 7101 is supported by a stand 7103.

[0403] The display device of one embodiment of the present invention can be applied to the display portion 7000 .

[0404] 36C can be operated using operation switches provided on the housing 7101 and a separate remote control 7111. Alternatively, the display portion 7000 may be provided with a touch sensor, and the television set 7100 may be operated by touching the display portion 7000 with a finger or the like. The remote control 7111 may have a display portion that displays information output from the remote control 7111. Using operation keys or a touch panel provided on the remote control 7111, the channel and volume can be controlled, and an image displayed on the display portion 7000 can be controlled.

[0405] The television device 7100 is configured to include a receiver, a modem, and the like. Ordinary television broadcasts can be received using the receiver. Furthermore, by connecting to a wired or wireless communication network via the modem, it is possible to perform one-way (from a sender to a receiver) or two-way (between a sender and a receiver, or between receivers, etc.) information communication.

[0406] 36D shows an example of a notebook computer. The computer 7200 includes a housing 7211, a keyboard 7212, a pointing device 7213, an external connection port 7214, and the like. The housing 7211 includes a display portion 7000.

[0407] The display device of one embodiment of the present invention can be applied to the display portion 7000 .

[0408] 36E and 36F show an example of digital signage.

[0409] 36E includes a housing 7301, a display portion 7000, and a speaker 7303. The digital signage 7300 may further include an LED lamp, operation keys (including a power switch or an operation switch), a connection terminal, various sensors, a microphone, and the like.

[0410] 36F shows a digital signage 7400 attached to a cylindrical pillar 7401. The digital signage 7400 has a display unit 7000 provided along the curved surface of the pillar 7401.

[0411] 36E and 36F, the display device of one embodiment of the present invention can be applied to the display portion 7000.

[0412] The larger the display unit 7000, the more information can be provided at one time. Also, the larger the display unit 7000, the more easily it will attract people's attention, which can increase the advertising effectiveness of, for example, advertisements.

[0413] Applying a touch panel to the display unit 7000 is preferable because it not only displays images or videos on the display unit 7000 but also allows the user to intuitively operate it. Furthermore, when used to provide information such as route information or traffic information, the intuitive operation can improve usability.

[0414] 36E and 36F , the digital signage 7300 or the digital signage 7400 is preferably capable of wirelessly linking with an information terminal 7311 or an information terminal 7411 such as a smartphone carried by a user. For example, advertising information displayed on the display unit 7000 can be displayed on the screen of the information terminal 7311 or the information terminal 7411. Furthermore, by operating the information terminal 7311 or the information terminal 7411, the display on the display unit 7000 can be switched.

[0415] The digital signage 7300 or the digital signage 7400 can also be made to run a game using the screen of the information terminal 7311 or the information terminal 7411 as an operation means (controller), thereby allowing an unspecified number of users to simultaneously participate in and enjoy the game.

[0416] The electronic device shown in Figures 37A to 37G has a housing 9000, a display unit 9001, a speaker 9003, operation keys 9005 (including a power switch or an operation switch), a connection terminal 9006, a sensor 9007 (including the function of detecting, detecting, or measuring force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared rays), a microphone 9008, etc.

[0417] 37A to 37G, the display device of one embodiment of the present invention can be applied to the display portion 9001.

[0418] The electronic devices shown in Figures 37A to 37G have various functions. For example, they may have a function to display various information (still images, videos, text images, etc.) on a display unit, a touch panel function, a function to display a calendar, date, or time, a function to control processing using various software (programs), a wireless communication function, a function to read and process programs or data recorded on a recording medium, etc. Note that the functions of the electronic devices are not limited to these, and they may have various other functions. The electronic devices may have multiple display units. Furthermore, the electronic devices may have a function to include a camera or the like to capture still images or videos and store them on a recording medium (external or built-in to the camera), a function to display the captured images on a display unit, etc.

[0419] The electronic devices shown in Figures 37A to 37G will be described in detail below.

[0420] FIG. 37A is a perspective view showing a mobile information terminal 9101. The mobile information terminal 9101 can be used as, for example, a smartphone. Note that the mobile information terminal 9101 may be provided with a speaker 9003, a connection terminal 9006, a sensor 9007, and the like. The mobile information terminal 9101 can display text and image information on multiple surfaces. FIG. 37A shows an example in which three icons 9050 are displayed. Information 9051, indicated by a dashed rectangle, can also be displayed on another surface of the display unit 9001. Examples of the information 9051 include notifications of incoming emails, SNS messages, phone calls, etc., the title of the email or SNS message, the sender's name, the date and time, the remaining battery level, and radio wave intensity. Alternatively, an icon 9050 or the like may be displayed in the position where the information 9051 is displayed.

[0421] 37B is a perspective view showing the mobile information terminal 9102. The mobile information terminal 9102 has a function of displaying information on three or more surfaces of the display unit 9001. Here, an example is shown in which information 9052, information 9053, and information 9054 are displayed on different surfaces. For example, a user can check information 9053 displayed in a position that can be observed from above the mobile information terminal 9102 while storing the mobile information terminal 9102 in a breast pocket of clothes. The user can check the display without taking the mobile information terminal 9102 out of the pocket and decide, for example, whether to answer a call.

[0422] 37C is a perspective view showing a tablet terminal 9103. The tablet terminal 9103 is capable of executing various applications such as mobile phone calls, e-mail, text browsing and creation, music playback, internet communication, and computer games, for example. The tablet terminal 9103 has a display unit 9001, a camera 9002, a microphone 9008, and a speaker 9003 on the front side of a housing 9000, operation keys 9005 as operation buttons on the side of the housing 9000, and a connection terminal 9006 on the bottom.

[0423] FIG. 37D is a perspective view showing a wristwatch-type mobile information terminal 9200. The mobile information terminal 9200 can be used as, for example, a smart watch (registered trademark). The display surface of the display unit 9001 is curved, and display can be performed along the curved display surface. The mobile information terminal 9200 can also perform hands-free calling by communicating with, for example, a headset capable of wireless communication. The mobile information terminal 9200 can also perform data transmission and charging with another information terminal through a connection terminal 9006. Note that charging can be performed by wireless power supply.

[0424] 37E to 37G are perspective views showing a foldable mobile information terminal 9201. Also, FIG. 37E is a perspective view of the mobile information terminal 9201 in an unfolded state, FIG. 37G is a perspective view of the mobile information terminal 9201 in a folded state, and FIG. 37F is a perspective view of a state in the process of changing from one of FIGS. 37E and 37G to the other. The mobile information terminal 9201 is highly portable when folded, and has a seamless, wide display area when unfolded, providing excellent visibility of the display. The display portion 9001 of the mobile information terminal 9201 is supported by three housings 9000 connected by hinges 9055. For example, the display portion 9001 can be bent with a curvature radius of 0.1 mm or more and 150 mm or less.

[0425] This embodiment mode can be combined with other embodiment modes as appropriate.

[0426] ELA: light, ELB: light, ELC: light, FL_408: capacitance, FL2_401: transistor, FL2_402: transistor, FL2_403: transistor, FL3_401: transistor, FL3_402: transistor, FL2_110: substrate, FL2_120: substrate, FL3_110: substrate, FL3_120: substrate, FL1_301: conductive layer, FL1_302: conductive layer, FL1_303: conductive layer, FL1_304: conductive layer, FL1_306: conductive layer, FL2_301: conductive layer, FL2_303: conductive layer, FL2_303a: conductive layer, FL2_3 03b: conductive layer, FL2_305: conductive layer, FL2_312: conductive layer, FL3_303: conductive layer, FL3_307: conductive layer, FL3_308: conductive layer, FL3_311: conductive layer, FL2_111: element isolation layer, FL3_111: element isolation layer, FL1_204: insulating layer, FL1_207a: insulating layer, FL1_207b: insulating layer, FL1_207c: insulating layer, FL1_210: insulating layer, FL2_112: insulating layer, FL2_113: insulating layer, FL2_201: insulating layer, FL2_202a: insulating layer, FL2_202b: insulating layer, FL2_203a: insulating layer, FL2 FL_203b: insulating layer, FL2_204: insulating layer, FL2_205: insulating layer, FL2_205c: insulating layer, FL2_208: insulating layer, FL2_209: insulating layer, FL3_201: insulating layer, FL3_202a: insulating layer, FL3_202b: insulating layer, FL3_203a: insulating layer, FL3_203b: insulating layer, FL3_204: insulating layer, FL3_205: insulating layer, FL3_205b: insulating layer, FL3_206: insulating layer, FL3_207: insulating layer, FL2_490: opening, FP: layer, FP_406B: light-emitting device, FP_406G: light-emitting device, FP_406 R: light-emitting device, FP_130: substrate, FP_422: layer, IntC: film, IntCA: layer, IntCB: layer, IntCC: layer, IntCE: layer, PR: photoresist, REFA: layer, REFB: layer, REFC: layer, REFE: layer, 40: pixel, 71: subpixel, 74: pixel array, 75: circuit, 76: circuit, 77: layer, 78: layer, 79: layer, 103A: unit, 103a: film, 103AB: gap, 103AS: side, 103B: unit, 103b: film, 103BS: side, 103C: unit, 103c: film, 103CS: side portion, 104A: layer,104a: film, 104AB: gap, 104B: layer, 104b: film, 104C: layer, 104c: film, 105: layer, 280: display module, 281: display section, 282: circuit section, 283: pixel circuit section, 283a: pixel circuit, 284: pixel section, 284a: pixel, 285: terminal section, 285_1: terminal section, 285_4: terminal section, 286: wiring section, 290: FPC, 291: substrate, 292: substrate, 401_11: conductive layer, 401_13: insulating layer, 401_14: insulating layer, 402_23: insulating layer, 402_24: conductive layer, 402_25: conductive layer, 402_27: conductive layer, 403_25a: conductive layer, 403_25b: conductive layer, 403_27: conductive layer, 501: insulating layer, 510: substrate, 520: functional layer, 521: insulating layer, 529_1: layer, 529_1A: opening, 529_1B: opening, 529_1C: opening, 529_1E: opening, 529_2: layer, 529_2A: opening, 529_2B: opening, 529_2C: opening, 529_2E: opening, 529_3: layer, 530A: pixel circuit, 530B: pixel circuit, 530C: pixel circuit, 550A: light-emitting device, 550B: light-emitting device, 550C: light-emitting device, 551: conductive Conductive film, 551A: electrode, 551AB: gap, 551B: electrode, 551C: electrode, 552: conductive layer, 573: layer, 700: display device, 700A: display device, 700B: display device, 700C: display device, 700D: display device, 700E: display device, 700F1: display device, 700F2: display device, 702A: pixel, 702B: pixel, 702C: pixel, 703: pixel, 731: display area, 6500: electronic device, 6501: housing, 6502: display unit, 6503: power button, 6504: button, 6505: speaker, 6506: microphone, 6507: camera, 650 8: light source, 6510: protective member, 6511: display panel, 6512: optical member, 6513: touch sensor panel, 6515: FPC, 6516: IC, 6517: printed circuit board, 6518: battery, 7000: display unit, 7100: television device, 7101: housing, 7103: stand, 7111: remote control device, 7200: computer, 7211: housing, 7212: keyboard, 7213: pointing device, 7214: external connection port, 7300: digital signage, 7301: housing, 7303: speaker, 7311: information terminal device,7400: Digital signage, 7401: Pillar, 7411: Information terminal, 8700A: Electronic device, 8700B: Electronic device, 8721: Housing, 8723: Mounting unit, 8727: Earphone unit, 8750: Earphone, 8751: Display panel, 8753: Optical member, 8756: Display area, 8757: Frame, 8758: Nose pad, 8800A: Electronic device, 8800B: Electronic device, 8820: Display unit, 8821: Housing, 8822: Communication unit, 8823: Mounting unit, 8824: Control unit, 8825 : Imaging unit, 8827: Earphone unit, 8832: Lens, 9000: Housing, 9001: Display unit, 9002: Camera, 9003: Speaker, 9005: Operation keys, 9006: Connection terminal, 9007: Sensor, 9008: Microphone, 9050: Icon, 9051: Information, 9052: Information, 9053: Information, 9054: Information, 9055: Hinge, 9101: Portable information terminal, 9102: Portable information terminal, 9103: Tablet terminal, 9200: Portable information terminal, 9201: Portable information terminal,

Claims

a first light-emitting device comprising a first unit; a second light-emitting device comprising a second unit; a third light-emitting device comprising a third unit; a first layer; and a second layer; the third unit has an area overlapping with the first unit and an area overlapping with the second unit, the first layer includes a first opening and a second opening; the first layer fills a gap between the first light-emitting device and the second light-emitting device; the second layer is formed on the first layer; the second layer contacts the first unit at the first opening; the second layer contacts the second unit at the second opening; The second layer contacts the first layer and the third unit. 　 a first light emitting device; and a second light-emitting device; and a third light-emitting device; and an insulating layer; a first layer; and a second layer; and a third layer; the first light-emitting device comprises a first electrode, a fourth layer, and a first unit; the first electrode is formed on the insulating layer; the fourth layer is formed on the first electrode; the fourth layer is sandwiched between the first electrode and the first unit; the first unit includes a first luminescent material; the first unit has a first side; the second light-emitting device comprises a second electrode, a fifth layer, and a second unit; the second electrode is formed on the insulating layer; the second electrode is adjacent to the first electrode; the second electrode is disposed with a first gap between it and the first electrode; the fifth layer is formed on the second electrode; the fifth layer is sandwiched between the second electrode and the second unit; the second unit includes a second luminescent material; the second unit is disposed with a second gap between it and the first unit, the second gap overlaps the first gap; the second unit has a second side; the second side surface faces the first side surface, the third light-emitting device comprises a third unit and a sixth layer; the sixth layer is formed on the second gap; the third unit is sandwiched between the sixth layer and the first gap; the third unit includes a third luminescent material; the first layer overlaps the first gap; the first layer is in contact with the insulating layer; the first layer contacts the first side and the second side; the first layer includes a first opening and a second opening; the first opening overlaps the first electrode; the second opening overlaps the second electrode; the second layer fills the first gap and the second gap; the second layer includes a third opening and a fourth opening; the third opening overlaps the first opening; the fourth opening overlaps the second opening; the third layer is formed on the second layer; the third layer is in contact with the second layer and the third unit; the third layer contacts the first unit at the third opening; The third layer contacts the second unit at the fourth opening. 　 the fourth layer has a function of injecting holes into the first unit; the fifth layer has a function of injecting holes into the second unit; the sixth layer has a function of injecting holes into the third unit; The display device according to claim 2 , wherein the third layer has a function of injecting electrons into the first unit, the second unit, and the third unit. 　 The display device of claim 2 , wherein the third light-emitting device covers the first light-emitting device, the second light-emitting device, and the second gap. 　 a seventh layer; and a conductive layer; the first layer includes a fifth opening and a sixth opening; the second layer includes a seventh opening and an eighth opening; the seventh opening overlaps with the fifth opening; the eighth opening overlaps with the sixth opening; the third light-emitting device comprises a third electrode; the third electrode is formed on the insulating layer; the third electrode overlaps the fifth opening; the third electrode contacts the sixth layer in the fifth opening; the third unit has a side portion on the second layer; the seventh layer is formed on the second layer; the seventh layer is in contact with the side surface portion, the seventh layer is in contact with the sixth layer; the conductive layer is formed on the insulating layer; the conductive layer overlaps the sixth opening, The display device according to claim 2 , wherein the conductive layer is in contact with the third layer in the sixth opening. 　 A display device according to any one of claims 2 to 5; a display module having at least one of a connector and an integrated circuit. 　 A display device according to any one of claims 2 to 5; An electronic device having at least one of a battery, a camera, a speaker, and a microphone. 　 A method for manufacturing a display device, comprising first to fifth phases, In the first phase, a first electrode, a second electrode, a third electrode, and a conductive layer are formed on an insulating layer; the second electrode is disposed with a first gap between it and the first electrode; In step 1 of the second phase, a first film is formed on the first electrode, the second electrode, the third electrode, and the conductive layer; In step 2 of the second phase, a second film is formed on the first film; In step 3 of the second phase, a third film is formed on the second film; In step 4 of the second phase, a film that will later become a first layer is formed on the third film; In step 5 of the second phase, unnecessary portions are removed from the second electrode, the third electrode, and the conductive layer using a photolithography method to form the first layer overlapping the first electrode; In step 6 of the second phase, the third film, the second film, and the first film are removed from the second electrode, the third electrode, and the conductive layer using an etching method to form a second layer, a first unit, and a third layer; the second layer is sandwiched between the first layer and the first electrode; the first unit is sandwiched between the second layer and the first electrode; In step 1 of the third phase, a fourth film is formed on the first layer, the second electrode, the third electrode, and the conductive layer; In step 2 of the third phase, a fifth film is formed on the fourth film; In step 3 of the third phase, a sixth film is formed on the fifth film; In step 4 of the third phase, a film that will later become a fourth layer is formed on the sixth film; In step 5 of the third phase, unnecessary portions are removed from the first layer, the third electrode, and the conductive layer using a photolithography method to form the fourth layer overlapping the second electrode; In step 6 of the third phase, removing the sixth film, the fifth film, and the fourth film from the first layer, the third electrode, the conductive layer, and the first gap using an etching method to form a fifth layer, a second unit, a sixth layer, and a second gap; the fifth layer is sandwiched between the fourth layer and the second electrode; the second unit is sandwiched between the fifth layer and the second electrode; the second gap overlaps the first gap; In step 7 of the third phase, the first layer and the fourth layer are removed using an etching method; In step 1 of the fourth phase, a seventh layer is formed; the seventh layer is in contact with the insulating layer in the first gap and covers the first unit and the second unit; In step 2 of the fourth phase, an eighth layer is formed; the eighth layer fills the first gap and the second gap; the eighth layer has a first opening overlapping the first electrode and a second opening overlapping the second electrode; In step 3 of the fourth phase, using the eighth layer and an etching method, the seventh layer and the second layer overlapping the first opening are removed, and the seventh layer and the fifth layer overlapping the second opening are removed; In step 1 of the fifth phase, a ninth layer is formed on the first unit, the second unit, the third electrode, the conductive layer, and the eighth layer; In step 2 of the fifth phase, a seventh film is formed on the ninth layer; In step 3 of the fifth phase, an eighth film is formed on the seventh film; In step 4 of the fifth phase, a film that will later become a tenth layer is formed on the eighth film; In step 5 of the fifth phase, an unnecessary portion is removed from the third electrode using a photolithography method, and the tenth layer is formed to overlap the first electrode, the second electrode, and the conductive layer; In step 6 of the fifth phase, the tenth layer is removed from the third electrode by etching, and an eleventh layer, a third unit, and the ninth layer are formed; In step 7 of the fifth phase, a twelfth layer is formed on the eleventh layer, on the side surface of the third unit, and on the side surface of the ninth layer; In step 8 of the fifth phase, the twelfth layer is removed by etching, leaving a side surface of the third unit and a portion in contact with a side surface of the ninth layer, and the eleventh layer is removed; In step 9 of the fifth phase, a ninth film is formed on the third unit, the twelfth layer, and the third electrode; In step 10 of the fifth phase, a tenth film is formed on the ninth film; In step 11 of the fifth phase, a film that will later become a thirteenth layer is formed on the tenth film; In step 12 of the fifth phase, unnecessary portions are removed from the conductive layer using a photolithography method to form the thirteenth layer overlapping the first electrode, the second electrode, and the third electrode; In step 13 of the fifth phase, the tenth film and the ninth film are removed from above the conductive layer using the thirteenth layer and an etching method to form a fourteenth layer and a fifteenth layer.

Images