Optical laminate, transparent display comprising same, and manufacturing method therefor

Abstract

The present invention relates to an optical laminate, a transparent display comprising same, and a manufacturing method therefor, the optical laminate comprising: a transparent member; a backplane substrate which is positioned on the transparent member, and which includes a source-drain electrode, an insulating layer, a gate electrode, a protective film and a pixel electrode; and a metal film positioned on the backplane substrate, wherein the metal film includes an adhesive film, includes an opening for electrically connecting to the backplane substrate, and has a thickness of 1 μm to 200 μm.

Description

Optical laminate, transparent display including same, and method for manufacturing same

[0001] The present invention relates to an optical laminate, a transparent display including the same, and a method for manufacturing the same.

[0002]

[0003] In recent years, technological advancements in the display market have led to a growing demand for large-area display devices. Furthermore, technological developments are also underway in advanced electronic circuits and display businesses, such as Micro-LED and Mini-LED, which can individually control brightness per unit area.

[0004] In particular, in the field of transparent displays in which multiple light-emitting diodes (LEDs) are mounted between the lower and upper substrates, the development of IC-less light-emitting diodes (LEDs) is required to increase the cost competitiveness of individually equipped light-emitting diodes (LEDs). To this end, transparent displays can be implemented that introduce thin-film transistors (TFTs) instead of IC chips. However, in this case, the wire resistance of the wire connected to the power supply must be very low in order to maintain the brightness of the light-emitting diode (LED), so the wire thickness must be as thick as possible. However, there is a problem in that it is difficult to proceed with additional precision patterns such as TFTs due to the step difference when forming thick wires on a glass substrate and / or film.

[0005] Korean Patent Publication No. 10-2019-0003025 discloses a glass circuit board used in semiconductor and various electronic device packaging, which uses a glass circuit board with through holes formed by a photosensitive glass process to prevent thermal deformation of the glass substrate during the photosensitive glass process and to improve the adhesion of electrodes during the circuit process. However, in this case, there is a risk of curling of the substrate due to the wiring thickness during large-area production, and there is a disadvantage of increased cost due to the additional process for forming through-hole micro-roughnesses on the glass substrate.

[0006] Accordingly, a transparent display and its manufacturing method that can implement TFT even when metal wiring having a certain thickness is applied and solves the problem of substrate curl due to wiring thickness when manufacturing a large area are required.

[0007]

[0008] The present invention is intended to solve the above-mentioned problems, and to provide a transparent display and a manufacturing method thereof that enables the implementation of a thin film transistor (TFT) even when a metal wiring having a predetermined thickness is applied, and solves the problem of curl of the substrate due to the wiring thickness when manufacturing a large area.

[0009] However, the problems to be solved by the present invention are not limited to the problems mentioned above, and other problems not mentioned will be clearly understood by those skilled in the art from the description below.

[0010]

[0011] The present invention relates to an optical laminate comprising: a transparent member; a backplane substrate positioned on the transparent member and including a source-drain electrode, an active layer, an insulating film, a gate electrode, a protective film, and a pixel electrode; and a metal film positioned on the backplane substrate, wherein the metal film includes an adhesive film and includes an opening for electrically connecting with the backplane substrate, and has a thickness of 1 to 200 μm.

[0012] In the present invention, the opening of the metal film may be a portion corresponding to at least one of a pixel electrode and a power connection portion of a backplane substrate.

[0013] In the present invention, the transparent member may be at least one selected from polyethylene terephthalate, cyclic olefin polymer, polyethylenenaphthalate, polyethersulfone, polycarbonate, cellulose acetate, polymethyl methacrylate, colorless polyimide, glass, ceramic, quartz, borosilicate, aluminosilicate, non-alkali, soda lime glass, wired glass, colored glass, magic mirror, and holographic glass.

[0014] The present invention may further include one or more selected from mesh glass, colored glass, magic mirror, and holographic glass when the transparent member is glass.

[0015] In the present invention, the metal film may include at least one selected from the group consisting of tin (Sn), copper (Cu), aluminum (Al), nickel (Ni), chromium (Cr), silver (Ag), iron (Fe), gold (Au), cobalt (Co), titanium (Ti), and tungsten (W).

[0016] In the present invention, the active layer of the backplane substrate may include at least one selected from the group consisting of ITO (Indium tin oxide), ZnO (Zinc oxide), Sn2O3 (Tin oxide), TiO2 (Titanium oxide), IGZO (Indium gallium zinc oxide), ZnSnO (Zinc tin oxide), CdSnO (Cadmium tin oxide), GaSnO (Gallium tin oxide), TiSnO (Titanium tin oxide), InGaZnO (Indium gallium zinc oxide), CuAlO (Copper aluminum oxide), SrCuO (Strontium copper oxide), LaCuOS (Lanthanum copper oxide sulfide), GaN (Gallium nitride), InGaN (Indium gallium nitride), AlGaN (Aluminum gallium nitride), CNT (Carbon nanotube), and InGaAlN (Indium gallium aluminum nitride).

[0017] In the present invention, the thickness of the backplane substrate may be 100 to 500 nm.

[0018] In the present invention, the adhesive film may include a silicone-based adhesive, have a thickness of 5 µm to 50 µm, and have an adhesion strength with a substrate of 5B or higher.

[0019] The present invention may further include a metal layer manufactured by including at least one selected from the group consisting of silver (Ag), copper (Cu), gold (Au), aluminum (Al), platinum (Pt), palladium (Pd), chromium (Cr), tungsten (W), titanium (Ti), tantalum (Ta), iron (Fe), cobalt (Co), nickel (Ni), zinc (Zn), tellurium (Te), vanadium (V), niobium (Nb), molybdenum (Mo), and alloys thereof, on the source-drain electrodes of the backplane substrate.

[0020] The present invention may be characterized in that the backplane substrate has a top-gate structure.

[0021] The present invention also relates to a transparent display including the optical laminate.

[0022] In addition, the present invention relates to a method for manufacturing the transparent display, comprising the steps of (S1) forming an opening by perforating a portion of a metal film including an adhesive film; (S2) manufacturing a backplane substrate including a transparent member and a pixel electrode; (S3) bonding a metal film including the opening to the backplane substrate; (S4) patterning the metal film bonded to the backplane substrate; (S5) connecting a wiring so that the patterned metal film is connected to the pixel electrode of the backplane substrate; and (S6) forming a protective layer so as to cover an upper portion of the metal film to which the wiring is connected.

[0023] In the present invention, in the step (S3) of bonding a metal film including the opening to the backplane substrate, the opening of the metal film may be bonded so as to correspond to the pixel electrode of the backplane substrate.

[0024] In the present invention, the backplane substrate may further include a source-drain electrode, an active layer, an insulating film, a gate electrode, and a protective film.

[0025]

[0026] The optical laminate and transparent display according to the present invention form wiring by having a metal film including an adhesive film separately from a backplane substrate including a transparent member and a thin film transistor (TFT), thereby solving durability problems such as curl and electrical short of the substrate that may occur even when thick wiring is applied, and maintaining high brightness of a light-emitting diode (LED) to secure optical reliability.

[0027] In addition, the transparent display can increase cost competitiveness by using IC-less LEDs by having a backplane substrate with a separate thin film transistor (TFT) mounted thereon.

[0028]

[0029] FIG. 1 is a simplified diagram of an optical laminate according to an embodiment of the present invention.

[0030] FIG. 2 illustrates a laminated structure of an optical laminate according to an embodiment of the present invention.

[0031] FIG. 3 illustrates a laminated structure of an optical laminate according to another embodiment of the present invention.

[0032] FIG. 4 illustrates a metal film including an adhesive film according to one embodiment of the present invention.

[0033] Figures 5a to 5c are process diagrams illustrating step-by-step a method for manufacturing a transparent display according to an embodiment of the present invention.

[0034] FIG. 6 is a plan view illustrating an example of manufacturing a transparent display according to an embodiment of the present invention.

[0035] Fig. 7 is a cross-sectional view taken along line A-A' of part of Fig. 6.

[0036] In the above drawing, each symbol represents the following:

[0037] 10: Optical laminate

[0038] 100: Transparent Absence

[0039] 200: Backplane board

[0040] 210: Source-drain electrodes

[0041] 211: Metal layer

[0042] 220: Active layer

[0043] 230: Insulating film

[0044] 240: Gate electrode

[0045] 241: Connecting electrode

[0046] 250: Shield

[0047] 260: Pixel electrode

[0048] 261: Capping electrode

[0049] 300: Metal film

[0050] 310: Adhesive film

[0051] 410: Solder layer

[0052] 420: Protective layer

[0053] A: Primary perforation area of ​​the metal film

[0054] B: Secondary patterning area removed to form metal film wiring

[0055] 1000: LED electrode connection (Red)

[0056] 2000: LED electrode connection (Green)

[0057] 3000: LED electrode connection (Blue)

[0058] 4000: LED electrode connection (GND)

[0059] 5000: (-) power supply

[0060] 6000: (+) power supply

[0061]

[0062] The present invention relates to an optical laminate and a transparent display, which have improved durability and optical properties, by bonding a separate metal film including an adhesive film to a separately manufactured backplane substrate to form wiring, and a method for manufacturing the same. Specifically, in the present invention, the metal film includes an adhesive film and includes an opening for electrically connecting to the backplane substrate to form wiring, and may have a thickness of 1 to 200 μm.

[0063] More specifically, the optical laminate of the present invention includes: a transparent member; a backplane substrate on the transparent member; and a separate metal film on the backplane substrate. The backplane substrate may include a source-drain electrode, an active layer, an insulating film, a gate electrode, a protective film, and a pixel electrode, and the separate metal film is for forming a wiring and may include an opening for bonding with a pre-formed backplane substrate, and the opening may be a portion corresponding to at least one of a pixel electrode and / or a power connection portion of the backplane substrate, and may be formed by punching a predetermined portion of the metal film.

[0064] Additionally, the metal film may be patterned into a metal pattern after bonding with the backplane substrate, and a light-emitting diode (LED) may be mounted on top of the patterned metal film.

[0065]

[0066] Hereinafter, embodiments of the present invention will be described in more detail with reference to the drawings. However, the following drawings attached to this specification illustrate preferred embodiments of the present invention and, together with the aforementioned description of the invention, serve to further enhance understanding of the technical concepts of the present invention. Therefore, the present invention should not be interpreted as being limited solely to the matters described in these drawings.

[0067] The terms used herein are for the purpose of describing embodiments and are not intended to limit the present invention. In this specification, singular forms also include plural forms, unless specifically stated otherwise.

[0068]

[0069] As used herein, the terms "comprises" and / or "comprising" are used to mean that they do not exclude the presence or addition of one or more other components, steps, operations, and / or elements other than the components, steps, operations, and / or elements mentioned. Like reference numerals refer to like elements throughout the specification.

[0070] Spatially relative terms such as “below,” “bottom,” “lower,” “above,” “top,” and “upper” can be used to easily describe the relationship between one element or component and other elements or components, as depicted in the drawings. Spatially relative terms should be understood to include different orientations of the elements during use or operation in addition to the orientation depicted in the drawings. For example, if an element depicted in a drawing is flipped over, an element described as “below” or “lower” of another element may end up “above” the other element. Thus, the exemplary term “below” can include both the above and below directions. Elements can also be oriented in other directions, and thus spatially relative terms can be interpreted based on their orientation.

[0071]

[0072]

[0073] Optical laminates and transparent displays

[0074] FIG. 1 is a simplified illustration of an optical laminate according to an embodiment of the present invention. Referring to FIG. 1, the optical laminate (10) of the present invention may include a transparent member (100), a backplane substrate (200), and a metal film (300) including an adhesive film (310). The metal film (300) is characterized by including an opening (area A), and thus can be bonded to a separately manufactured backplane substrate to form wiring.

[0075]

[0076] The transparent member (100) is not particularly limited as long as it is generally transparent and does not impair the optical properties of the optical laminate. For example, as the transparent member (100), polyethylene terephthalate, cyclic olefin polymer, polyethylenenaphthalate, polyethersulfone, polycarbonate, cellulose acetate, polymethyl methacrylate, colorless polyimide, glass, ceramic, quartz, borosilicate, aluminosilicate, non-alkali, soda lime glass, meshed glass, colored glass, magic mirror, and holographic glass, etc., which have secured flatness and a transmittance of 89% or more, can be used, and the present invention is not limited thereto, but using glass is most preferable. The above glass may include, for example, oxide glass such as silicate glass, borate glass, or phosphate glass. In this case, there is an advantage in that heat shrinkage does not occur during subsequent processes, and a predetermined hardness can be imparted to the optical laminate. The type of glass substrate may include, without limitation, quartz, borosilicate, aluminosilicate, alkali-free, and soda lime GLASS. In this case, the shape is not limited to a specific shape such as a wafer or a square plate, and can be processed and used in various ways depending on the purpose.

[0077]

[0078] In one or more embodiments, the transparent member (100) may have a thickness of 0.5 mm to 20 mm. When the thickness of the transparent member (100) satisfies the above range, the transparent member (100) can be thinned while having excellent hardness, and can prevent deformation or cracking of the metal film (300). Specifically, when the thickness of the transparent member (100) is less than 0.5 mm, it may be difficult to protect the metal film (300), the backplane substrate, or other laminated members from external impact, and when it exceeds 20 mm, it may be disadvantageous in terms of thinning or weight reduction. In addition, when used in a place where strength is required, it can be used according to the purpose in a thickness range of 3 mm to 20 mm. Tempered glass can also be utilized, and in the case of thin glass in the range of 0.5 mm to 20 mm, it is preferable to use chemically strengthened tempered glass for quality. In addition, both heat strengthening and chemically strengthening can be used in the range of 3 mm to 20 mm.

[0079]

[0080] In one or more embodiments, the transparent member (100) may have a single-layer or multi-layer structure. For example, the transparent member (100) may have a single-layer structure formed of a single glass substrate, but is not necessarily limited thereto, and may have a multi-layer structure in which a plurality of glass substrates are laminated. In the case where the transparent member is glass, it may further include one or more selected from mesh glass, colored glass, magic mirror, and holographic glass.

[0081]

[0082] The above backplane substrate (200) has a plurality of wirings and thin film transistors (TFTs) mounted thereon, and serves to drive an organic light-emitting diode (LED) connected to each TFT. The TFT forms an active layer (active layer) on the backplane substrate through which current can flow, and then controls the gate voltage to move electrons from a source to a drain through the active layer, thereby implementing the operation of the LED element through the generated current.

[0083] FIG. 2 illustrates a laminated structure of an optical laminate according to an embodiment of the present invention, and FIG. 3 illustrates a laminated structure of an optical laminate according to another embodiment of the present invention. In particular, FIG. 2 and FIG. 3 illustrate the structure of a backplane substrate (200) in detail. Referring to FIG. 2 and FIG. 3, in an embodiment of the present invention, the backplane substrate (200) may include a source-drain electrode (210), an active layer (220), an insulating film (230), a gate electrode (240), a protective film (250), and / or a pixel electrode (260). In addition, the backplane substrate (200) may further include a metal layer (211), a connecting electrode (241), and / or a capping electrode (261), as needed.

[0084]

[0085] Referring to FIG. 2, the source-drain electrode (210) is an electrode that supplies and receives electrodes, one of which is connected to a vertical data line and the other is connected to a pixel electrode (260), and provides an image display device further including an image display unit in which a plurality of light-emitting elements are formed at intersections, and a column drive circuit and a row drive circuit for driving the image display unit by selecting the light-emitting elements to emit light. The source-drain electrode (210) can be made of a transparent conductive oxide having conductivity. For example, tin oxide, zinc oxide, gallium oxide, indium oxide, etc. can be used alone or in combination. Specifically, it may include at least one selected from the group consisting of ITO (Indium tin oxide), IZO (Indium zinc oxide), IGZO (Indium gallium zinc oxide), In2O3 (indium oxide), IGO (indium gallium oxide), AZO (aluminum zinc oxide), ITZO (indium tin zinc oxide), GZO (gallium zinc oxide), ZnO (Zinc oxide), Sn2O3 (Tin oxide), and / or TiO2 (Titanium oxide), and may be formed in a single layer or a multilayer structure of two or more layers.

[0086] Referring to FIG. 3, the source-drain electrode (210) may further include a metal layer (211). The metal layer (211) may be made of a material having a metallic structure, and may include, for example, one or more selected from the group consisting of a single metal such as silver (Ag), copper (Cu), gold (Au), aluminum (Al), platinum (Pt), palladium (Pd), chromium (Cr), tungsten (W), titanium (Ti), tantalum (Ta), iron (Fe), cobalt (Co), nickel (Ni), zinc (Zn), tellurium (Te), vanadium (V), niobium (Nb), and / or molybdenum (Mo), or an alloy thereof such as MoNb. The above metal layer (211) may be applied to both the upper and / or lower portions of the source-drain electrode (210), but in one embodiment of the present invention, it is preferable to be positioned on the lower surface and / or inner surface of the source-drain electrode (210) to prevent damage such as corrosion or electrical attack.

[0087]

[0088] The above active layer (220) is a region where electrons and holes recombine, and when a certain voltage or higher is applied to the gate, a channel is formed through which electrons can move between the source and the drain. The above active layer (220) may include at least one selected from the group consisting of ITO (Indium tin oxide), ZnO (Zinc oxide), Sn2O3 (Tin oxide), TiO2 (Titanium oxide), IGZO (Indium gallium zinc oxide), ZnSnO (Zinc tin oxide), CdSnO (Cadmium tin oxide), GaSnO (Gallium tin oxide), TiSnO (Titanium tin oxide), InGaZnO (Indium gallium zinc oxide), CuAlO (Copper aluminum oxide), SrCuO (Strontium copper oxide), LaCuOS (Lanthanum copper oxide sulfide), GaN (Gallium nitride), InGaN (Indium gallium nitride), AlGaN (Aluminum gallium nitride), CNT (Carbon nanotube), and / or InGaAlN (Indium gallium aluminum nitride). The above active layer (220) is preferably manufactured by including IGZO (Indium gallium zinc oxide) because it has fast electron mobility and a high On current compared to amorphous silicon, which allows the size of the drive TFT to be reduced, making it suitable for transparent displays, and it has low leakage current, which allows power consumption to be reduced in the Off state, making it particularly preferable for large displays.

[0089]

[0090] The insulating film (230) serves to separate the gate electrode (240) and the active layer (220), and has the effect of blocking light and / or heat from the light-emitting element (LED) to a certain extent, thereby preventing damage to the elements, electrodes, wiring, etc. located underneath. The insulating film (230) may be manufactured using a deposition method such as chemical vapor deposition (CVD) or plasma enhanced chemical vapor deposition (PECVD) using a material such as silicon nitride (SiNx), silicon dioxide (silica, SiO2), etc., but is not limited thereto, and may be applied using a manufacturing method generally used in the field.

[0091]

[0092] The above gate electrode (240) can serve to form a channel in the active layer by applying a voltage to the gate and to allow current to flow from the source to the active layer to the drain. The gate electrode (240) can be made of a material having a metallic structure having conductivity, and for example, can be used as including at least one selected from the group consisting of a single metal such as silver (Ag), copper (Cu), gold (Au), aluminum (Al), platinum (Pt), palladium (Pd), chromium (Cr), tungsten (W), titanium (Ti), tantalum (Ta), iron (Fe), cobalt (Co), nickel (Ni), zinc (Zn), tellurium (Te), vanadium (V), niobium (Nb), and / or molybdenum (Mo), or an alloy thereof such as MoNb.

[0093]

[0094] The above backplane substrate (200) may further include a connection electrode (241) together with the gate electrode (240). The connection electrode (241) may be made of the same material as the gate electrode (240) in the same process, and may generally refer to a portion excluding the gate electrode (240) formed above and / or below the active layer (220). The connection electrode (241) may correspond to a data line, and may be a wiring that electrically connects various elements or a ground (GND), etc.

[0095]

[0096] The above protective film (250) is intended to solve the problem of non-uniform display, and may be applied in an open state in the pixel electrode (260) where the light emitting diode (LED) is directly mounted and / or in the capping electrode (261) region described later. The protective film (250) may be made of a transparent organic or inorganic insulating material such as a silicon nitride compound (SiNx), silicon dioxide (silica, SiO2), or an organic insulating layer material.

[0097]

[0098] The above pixel electrode (260) is formed to protect the connection electrode (241) of the backplane substrate (200) and for electrical connection with a light-emitting diode (LED), and may refer only to an area where the light-emitting diode (LED) is directly mounted and emits light. The above pixel electrode (260) may be formed as a film using a material such as ITO (Indium tin oxide), IZO (Indium Zinc Oxide), etc. Among them, using ITO (Indium tin oxide) with strong etching performance has the advantage of protecting the lower film from the etching process in the post-process.

[0099]

[0100] The above backplane substrate (200) may further include a capping electrode (261) together with the pixel electrode (260). The capping electrode (261) may be made of the same material as the pixel electrode (260) in the same process, and may refer to a portion excluding the pixel electrode (260) portion where the light emitting diode (LED) and the backplane substrate are electrically connected. The capping electrode (261) may electrically connect the backplane substrate (200) and the metal film (300) and / or the solder layer (410), and may protect some of the connection electrodes (241).

[0101]

[0102] The lamination process of the above backplane substrate (200) can be applied without limitation to any known process, and its implementation examples are not limited. For example, a pattern may be formed through a photoresist, exposure, development, and etching process using a mask.

[0103] In terms of the stacking order of the above backplane substrate, it can be broadly divided into four types depending on the arrangement of the gate electrode. Specifically, top gate-bottom contact, top gate-top contact, bottom gate-bottom contact, and bottom gate-top contact methods can be applied. In particular, in one embodiment of the present invention, it is preferable to apply a top gate structure in which the gate electrode is arranged on the upper side of the gate insulating layer because the active layer (220), such as the lower layer IGZO, can be protected to some extent from damage caused by light and / or heat that may be received by the LED and / or external light by the insulating film (230) made of a metal material.

[0104]

[0105] Referring to FIG. 4, the metal film (300) includes an adhesive film and has an opening (A region) in which a portion of an electrically connected area is perforated. The metal film (300) has a separate substrate in which an adhesive film is formed on one surface of the metal film to be bonded to form a thick wire on a transparent member on glass or a film and a backplane substrate. In addition, by forming an opening (A region) in which a portion of an electrically connected area is first perforated before bonding to the transparent member and the backplane substrate, substrate defects such as curling and / or lifting of the substrate depending on the wiring thickness can be prevented even when manufacturing a large-area display, and the lower backplane substrate and the thick upper wiring can be electrically connected. The perforated opening (A region) may be a portion corresponding to one or more of a pixel electrode and / or a power connection portion in order to be electrically connected to a separately manufactured backplane substrate. Specifically, the opening (area A) may be a portion corresponding to a pixel electrode (260) portion, and may be a portion corresponding to a region further including a capping electrode (261) portion. The power connection portion may be a power connection portion (7000 in FIG. 6) of a side wiring portion for individual connection with a PCB and / or FPC. More preferably, the opening (area A) may be perforated to include a portion connected to a pixel electrode (260; 1000, 2000, 3000 and / or 4000 in FIG. 6) on which a light emitting diode (LED) is mounted, a capping electrode (261; 5000 and / or 6000 in FIGS. 6 and 7), and / or a portion corresponding to a power connection portion (7000 in FIG. 6). The location of the above first punching (area A) can be punched using a punching machine or the like, and if it is an opening including the electrically connected area, it is possible even if the opening and the electrically connected area do not perfectly match. In this case, a protective film (not shown) may be further included on the lower surface of the adhesive film (310).The above protective film can be removed when bonded to the backplane substrate (200).

[0106]

[0107] The above metal film (300) may be formed through a patterning process after bonding the backplane substrate (200). The patterning portion may mean that the B region illustrated in FIG. 4 is patterned to form a wiring portion by removing the region. The patterning process may be performed by a known method, and will be described in detail in the <Method for Manufacturing a Transparent Display> described below.

[0108] The above metal film (300) is not particularly limited as long as it has electrical conductivity, and may include, for example, one or more selected from the group consisting of tin (Sn), copper (Cu), aluminum (Al), nickel (Ni), chromium (Cr), silver (Ag), iron (Fe), gold (Au), cobalt (Co), titanium (Ti), and / or tungsten (W), and it is preferable to use copper foil in terms of processability, ease of acquisition, conductivity, etc.

[0109] The metal film (300) may be formed by a known metal film process, for example, by preparing and attaching a metal film, or by using at least one method selected from the group consisting of electroless deposition, electroplating, sputtering, thermal evaporation, and electron beam evaporation, but is not limited thereto. According to one embodiment of the present invention, the metal film is formed by a copper foil photo / etching process, and tin plating is performed on the upper portion of the copper foil to provide the visual characteristics of copper and the adhesive force for soldering a light emitting diode (LED).

[0110] The metal film (300) may have a thickness of 1 μm to 200 μm, preferably 3 μm to 120 μm, and more preferably 50 μm to 100 μm. If the thickness of the metal film is less than the above range, it may not be easy to form a uniform thin film and / or form a pattern, and if it exceeds the above range, there may be a problem in that it cannot be applied to an electronic device having a thin film structure. In addition, since the thickness of the metal film (300) is thicker than the thickness of the backplane substrate (200) on the lower surface, when the metal film (300) is individually bonded after the first punching as in one embodiment of the present invention, there is an advantage in forming thick wiring. Specifically, when the metal of the backplane substrate becomes thick, glass curl occurs due to the difference in thermal expansion rates between the glass and the metal during the metal coating process, and the subsequent coating processability is deteriorated due to the metal step during metal patterning. Therefore, by separately manufacturing a thin-film backplane substrate at the bottom and processing and connecting only the power connections (VDD, VSS, etc.) that require thick wiring with a metal film, the thickness can be maintained thickly and the wiring with a thin line width can be effectively created. Accordingly, especially when manufacturing a large-area transparent display, there is an advantage in that the field of view is not obstructed and the current can be evenly transmitted across the entire surface, thereby securing high-quality resolution, brightness, and / or luminance.

[0111]

[0112] The adhesive film (310) included on one side of the metal film (300) must have excellent adhesion between the backplane substrate (200) and the metal film (300) and ensure transparency. In one embodiment of the present invention, it is preferably manufactured from an adhesive film composition including a silicone-based adhesive. The adhesive film composition of the present invention includes a silicone-based additive and a solvent, and may further include an additive. Specifically, in the case of including an adhesive layer formed using a conventional acrylic-based adhesive or an epoxy-based adhesive, there was a problem that the adhesion to the glass substrate was insufficient, or the adhesive layer was damaged by the etchant used for etching the metal layer formed on the upper part of the adhesive layer. Furthermore, in the case of being used in a product mainly used outdoors, such as a transparent display, there was a problem that the adhesion of the adhesive layer to the glass substrate was reduced, or yellowing of the adhesive layer occurred, which caused product defects. In the present invention, when the adhesive film (310) includes a silicone-based adhesive, not only is the adhesive strength with the glass substrate excellent, but also the chemical resistance to the etchant is excellent, and the heat resistance and reliability in high temperature and high humidity environments are excellent.

[0113] The silicone-based adhesive may be at least one of a silicone compound and a siloxane compound. The silicone compound may be used without particular limitation as long as it is a compound containing a silicon (Si) atom. In addition, the siloxane compound may be a compound containing a siloxane bond of a Si-O bond without limitation. More specifically, in one example of the present invention, the silicone compound and the siloxane compound may be at least one of trimethylated silica, vinyl terminated polydimethylsiloxane, hexamethyl disiloxane, trisiloxane, and tetrakis(trimethylsilyloxy)silane.

[0114] In particular, it is preferable that the silicone-based adhesive of the present invention be included in an amount of 40% to 60% based on the total weight of the adhesive film composition. As such, the silicone-based adhesive of the present invention may be added by being diluted at a lower concentration than conventional adhesives, and thus, when the adhesive film of the present invention is bonded to a metal layer or substrate, the adhesion to the metal layer or substrate can be maximized, so that bonding is possible without additional treatment such as UV curing of the adhesive film, which has the advantage of allowing bonding.

[0115] The solvent is not particularly limited as long as it can dilute the silicone-based adhesive, but may be, for example, toluene, xylene, PGME, and / or PGMEA. It is preferable that the solvent of the present invention be included in an amount of 40% to 55% of the total weight of the adhesive film composition, from the viewpoint of stability of the adhesive coating thickness under the metal layer.

[0116] The above additive may be one or more of an anchorage, a cross linker, and a catalyst.

[0117] The above anchorage is added to increase the bonding strength with the metal layer during adhesive film coating, thereby preventing the adhesive film from detaching from the metal layer. Generally, there are no particular limitations on the material used as the anchorage, but it is preferable that it does not undergo thermal deformation at temperatures below 200°C.

[0118] The above crosslinking agent is a substance added for chemical bonding between components of the adhesive film composition, and is preferably a product that does not undergo thermal deformation at 200°C or lower.

[0119] The above catalyst is a component added for curing the adhesive film composition, and helps the adhesive film composition transform from a liquid phase to a solid phase. Specific examples include a platinum catalyst, a palladium catalyst, and / or an osmium catalyst.

[0120] It is preferable from the viewpoint of adhesive stability that the additive of the present invention is included in an amount of 0.1% to 10% based on the total weight of the adhesive film composition.

[0121] The adhesive film (310) of the present invention may be formed by heating the adhesive film composition to a temperature of 100°C to 180°C and curing it.

[0122] The adhesive film (310) may have a thickness of 5 µm to 50 µm, preferably 5 µm to 30 µm, and preferably 5 µm to 25 µm. If the thickness of the adhesive film (310) is less than 5 µm, sufficient adhesive strength with other components cannot be maintained, and if it exceeds 50 µm, there may be a disadvantage in terms of increasing the thickness of the product.

[0123] In one embodiment, the adhesive film (310) may not include a separate member, for example, an intermediate layer and / or a protective layer, at the contact interface with the metal film (300). Specifically, in the case of an adhesive film formed using a conventional acrylic adhesive or an epoxy adhesive, as described above, there was a problem in that the adhesive film was damaged by the etchant used for etching the metal layer formed on the upper portion of the adhesive film, for example, in the case of an adhesive film formed using an epoxy adhesive, the opacity of the adhesive film increased when in contact with the etchant. Therefore, in order to prevent damage to the adhesive film by the etchant, the conventional optical laminate separately included a member of the intermediate layer and / or protective layer between the adhesive film and the metal layer. However, when a separate member is included in this way, not only was the processability lowered and the manufacturing cost increased due to the addition of a manufacturing process, but there was also a problem in that it was disadvantageous in terms of manufacturing a thin film. However, the present invention forms an adhesive film using a silicone-based adhesive having excellent chemical resistance to an etchant as described above, so that damage to the adhesive due to the etchant does not occur, and thus, a separate intermediate layer and / or protective layer that were previously provided for protecting the adhesive is not included, thereby not only improving processability but also providing an advantage in terms of reducing manufacturing costs, and further providing an advantage in terms of thinning the film.

[0124] In one embodiment, the adhesive film (310) may have an adhesion strength of 5B or greater with respect to the backplane substrate (200). As described above, the adhesive film (310) includes a silicone-based adhesive, and thus is characterized by excellent adhesion strength with respect to the backplane substrate (200).

[0125] In one embodiment, the adhesion of the adhesive film (310) to the backplane substrate (200) may be evaluated by the measurement standard ISO 2409: Standard Test Methods for Measuring Adhesion by Tape Test.

[0126]

[0127] The above light emitting diode (LED) (not shown) is a light emitting element that is mounted on a portion of a backplane substrate (200) where a pixel electrode (260) is formed using the SMT (Surface Mount Technology) method and attached to the substrate, and emits light when voltage is applied. Referring to FIG. 6, in one embodiment of the present invention, the portion where the pixel electrode (260) is formed may be a GND connection portion (1000), which is an area where a light emitting diode (LED) is mounted, and each of the RGB electrode connection portions (2000, 3000, and 4000). Each of these may mean an electrode in a light emitting area where each terminal of a light emitting diode (LED) that emits red light, green light, blue light, etc. is connected, and a combination of these may implement light of various colors, including white. In one embodiment of the present invention, the backplane substrate (200) is configured so as to be able to mount a 4-pin type light-emitting diode (LED), but is not limited thereto, and if necessary, a plurality of light-emitting diodes (LEDs) (not shown) may include an N-type electrode and a P-type electrode and may be formed in various structures such as a lateral type, a vertical type, a flip chip type, etc. In one embodiment of the present invention, the light-emitting diode (LED) (not shown) may be applied to a known light-emitting diode (LED) without limitation, and the implementation examples thereof are not limited, but it is preferable to use an IC-less type light-emitting diode (LED) that does not have a built-in driving IC in terms of practicality and / or economy.

[0128] The spacing or density of the above light emitting diodes (LEDs) (not shown) is not particularly limited, but may be arranged in a grid pattern. In this case, the spacing between the top, bottom, left, and right may be 0.05 mm to 50 mm, preferably 1 mm to 30 mm, and the spacing between the plurality of light emitting diodes (LEDs) may be the same or different depending on the needs of the plurality of light emitting diodes (LEDs). When light emitting diodes (LEDs) are formed on the metal film substrate of the present invention, there is an advantage as a transparent display capable of transmitting and reproducing images on a substrate having transparency.

[0129]

[0130] <Method for manufacturing transparent displays>

[0131] FIGS. 5A to 5C are process diagrams illustrating a method for manufacturing a transparent display according to the present invention. The method for manufacturing a transparent display according to an embodiment of the present invention may include a step (S1) of forming an opening by perforating a portion of a metal film including an adhesive film; a step (S2) of manufacturing a backplane substrate including a transparent member and a pixel electrode; a step (S3) of bonding a metal film including the opening to the backplane substrate; a step (S4) of patterning the metal film bonded to the backplane substrate; a step (S5) of connecting a wiring so that the patterned metal film is connected to the pixel electrode of the backplane substrate; and a step (S6) of forming a protective layer so as to cover an upper portion of the metal film to which the wiring is connected.

[0132] The step (S1) of forming an opening (area A) by perforating a portion of a metal film including an adhesive film can be applied as is to the contents of the metal film (300) described above, and therefore, description thereof will be omitted. At this time, the perforated opening (area A) may include a portion corresponding to one or more of the pixel electrodes (260) and / or power connection portions (part 7000 of FIG. 6) of the backplane substrate (200).

[0133] The step (S2) of manufacturing a backplane substrate including a transparent member and a pixel electrode can be performed by a known method within a range that does not harm the purpose of the present invention, and details are omitted. As described above, the backplane substrate (200) can include a source-drain electrode (210), an active layer (220), an insulating film (230), a gate electrode (240), a protective film (250), and a pixel electrode (260), and may further include a metal layer (211), a connection electrode (241), and / or a capping electrode (261). The laminated structure of each substrate of the backplane substrate can be classified into an upper contact structure and a lower contact structure depending on the positional relationship between the electrode material layer (the source-drain electrode (210), the metal layer (211), the gate electrode (240), and / or the connection electrode (241)) and the active layer (220). The top contact structure may mean that the electrode material layer is formed on top of the active layer, and in some cases, it may mean that the active layer is formed only on the electrode material layer, but is not limited to either. However, in one embodiment of the present invention, a top gate structure in which the gate electrode (240) is disposed on top of the active layer (220), more preferably a 'top gate-bottom contact' structure in which the gate electrode (240) is disposed on top of the active layer (220) and the source-drain electrodes (210) are disposed below the active layer (220), may be more preferable because the IGZO or the like used in the active layer (220) can prevent damage that may occur due to a light-emitting diode (LED) and / or external light / or heat by the upper layer substrate.

[0134] The step (S3) of bonding a metal film including the opening to the backplane substrate is performed by first positioning a metal film (300) having an electrically connected region firstly perforated on the manufactured backplane substrate (200) and then bonding the direction of the adhesive film (310). At this time, a part of the opening (region A) of the metal film can be bonded so that it corresponds to the pixel electrode (260) of the backplane substrate. The step can be appropriately performed within a range that does not harm the purpose of the present invention, and bonding can be performed using, for example, a laminator, a press machine, etc.

[0135] The step (S4) of forming a wiring by patterning the metal film bonded to the above-described backplane substrate (removing the B region) may include a process of applying a photoresist pattern forming composition on the metal film (300) by spin coating, slit coating, inkjet printing, etc., or a process of bonding a DFR (Dry Film resist), a process of drying and heat-treating the applied photoresist pattern forming composition to form a photoresist film, and / or a process of selectively exposing and developing the photoresist film to dissolve and remove the photoresist film corresponding to the exposed area or the non-exposed area, thereby forming a photoresist pattern, etc. At this time, the adhesive film (310) of the metal film (300) is not removed and may serve to protect the lower backplane substrate against a process such as metal layer pattern etching performed thereafter. The process of etching and removing the portion where the metal layer pattern is not developed is not particularly limited, and may be performed by a dry etching process or a wet etching process. The above dry etching process or wet etching process can be performed by a known method. In one embodiment, the etching process, when performed by dry etching, may have excellent etching performance for the metal film (300), but is not limited thereto. The wiring formation step can be performed by a known method, and details thereof are omitted.

[0136] The step (S5) of connecting wiring (solder layer; 410) so that the patterned metal film is electrically connected to the backplane substrate is generally intended for the purpose of grounding and electrode formation between the power wiring patterned with the metal film, particularly the data line included in the connection electrode (241) and the TFT pad portion (capping electrode (261); 5000 and / or 6000 portions of FIGS. 6 and 7) in sub-pixel units, and is not limited to a material and method having excellent conductivity, adhesiveness, and workability. More specifically, it is preferable to use silver (Ag) in a paste state because the coating amount is constant without viscosity change over time, and low-temperature curing and electrical characteristics are excellent.

[0137] The step (S6) of forming a protective layer (420) to cover the upper portion of the metal film to which the above-mentioned wiring is connected may be a step of forming a solder resist layer of either a liquid type or a film type, and preferably, may be a step of forming a solder resist layer. The method of forming the protective layer is not particularly limited, but may be a step of manufacturing a solder resist layer of either the liquid type or the film type using a known method. The protective layer (420) may be positioned in an area other than a portion where a light-emitting diode (LED) is to be placed (1000 to 4000 in FIG. 6). Internally, the protective layer must have stability against heat generated by the LED light and blocking properties against internal organic leaching substances such as a light-emitting diode package (LED Package), solder paste, and copper foil adhesive, and externally, must ensure durability against heat, moisture, and / or sunlight. The protective layer (420) in the present invention may be formed by thermal curing, photocuring, or thermal / photocuring of a solder resist, and may be either a liquid type or a film type. When the solder resist is a liquid type, it may be manufactured from a solder resist composition containing a binder resin, a photopolymerizable compound, a photopolymerization initiator, a pigment, a dye, a solvent, and / or other additives. When the solder resist is a liquid type, since the printing and drying processes must be repeated during manufacturing, it is more preferable to apply a film type described later in the present invention. When the solder resist is a film type, it may include a protective film, a photosensitive resin layer, and a base film. The base film includes a polyester film such as polyethylene terephthalate and is used as a support. The protective film serves as a protective layer that prevents damage to the resist, but is not limited thereto. The photosensitive resin layer may use the same components as the liquid type solder resist composition.In addition, when the solder resist is of a film type, it is preferable in that air bubbles are unlikely to be mixed between the substrate and the solder resist layer, the flatness of the film is excellent, so that a light-emitting diode (LED) can be efficiently mounted, and it has a high resolution.

[0138] The protective layer can be patterned using photolithography to form a partial covering of the metal film. This allows the film to be coated on the metal film in a form suitable for mounting a light-emitting diode (LED). While the specific photolithography method is not particularly limited, the method described in the following description of the method for manufacturing an optical laminate can be applied without limitation.

[0139] Among the above protective layers (420), the thickness laminated on the metal film (300) may be 1 µm to 3 mm.

[0140]

[0141] FIG. 6 is a plan view simply illustrating a transparent display according to an embodiment of the present invention, and FIG. 7 is a cross-sectional view taken along the AA' direction of FIG. 6. Referring to FIG. 6, when the transparent display of the present invention uses a 4-pin light emitting diode (LED), it may have a GND connection part (1000) of the LED, each of the RGB electrode connections (2000, 3000, and 4000), and may also have a (-) power part (5000) and / or a (+) power part (6000) for connection to the upper electrode. The above (-) power supply unit (5000) is connected to the upper metal film (300) by a solder layer (410), is a relatively (-) polar input, and may be a ground unit, a GND connection unit and / or a VSS connection unit, etc., and the above (+) power supply unit (6000) is also connected to the upper metal film (300) by a solder layer (410), and is a unit to which a terminal to which a supply voltage or an applied voltage is applied is connected, and may be a VCC connection unit and / or a VDD connection unit, etc. As shown in FIG. 6, a cross-sectional view taken along the line A-A' including the RED electrode connection unit (2000) and the GND connection unit (1000) among the R, G, and B electrode connection units is shown in detail in FIG. 7. At this time, referring to FIGS. 6 and 7, a protective layer (420) may be formed in an open state in the portion where the connection portion of the light-emitting diode (LED) is mounted, that is, in the RGB electrode connection portion (2000, 3000, and 4000) of the LED and / or the GND connection portion (1000) of the LED. In addition, in the portion (1000 to 4000) where the connection portion of the light-emitting diode (LED) is mounted, a metal capping may be further coated on the upper surface of the pixel electrode (260) to secure adhesion between the pixel electrode (260) and the LED pin when the LED is mounted (not shown). The metal capping may be, for example, Sn and / or a Cu-Ni alloy, but is not limited thereto.

[0142]

[0143] The optical laminate manufactured by the above manufacturing method may further include a separate substrate layer, such as glass, to protect the light-emitting diode (LED) mounted thereon. The glass may include, for example, oxide glass, such as silicate glass, borate glass, or phosphate glass, and the space between the optical laminate and the glass may be filled with an optically transparent adhesive resin (OCR).

[0144]

[0145] The optical laminate of the present invention and the transparent display including the same, as they exhibit the above-described characteristics, can be suitably used in display devices requiring a large area and low resistance, and in particular, they have excellent curl characteristics and excellent light-emitting diode (LED) brightness, and thus have excellent optical reliability, and thus have the characteristic of being suitably used in devices that can be exposed to the external environment for a long time, such as transparent displays.

[0146]

[0147]

[0148] The optical laminate and transparent display according to the present invention form wiring by having a metal film including an adhesive film separately from a backplane substrate including a transparent member and a thin film transistor (TFT), thereby solving durability problems such as curl and electrical short of the substrate that may occur even when thick wiring is applied, and maintaining high brightness of a light-emitting diode (LED) to secure optical reliability.

Claims

1. Transparent absence; A backplane substrate positioned on the transparent member and including a source-drain electrode, an active layer, an insulating film, a gate electrode, a protective film, and a pixel electrode; and A metal film positioned on the upper portion of the above backplane substrate; An optical laminate in which the metal film comprises an adhesive film and an opening for electrically connecting with the backplane substrate, and has a thickness of 1 to 200 μm.

2. In claim 1, An optical laminate, wherein the opening of the metal film corresponds to at least one of the pixel electrode and power connection portion of the backplane substrate.

3. In claim 1, An optical laminate in which the transparent member is at least one selected from polyethylene terephthalate, cyclic olefin polymer, polyethylenenaphthalate, polyethersulfone, polycarbonate, cellulose acetate, polymethyl methacrylate, colorless polyimide, glass, ceramic, quartz, borosilicate, aluminosilicate, non-alkali, soda lime glass, wired glass, colored glass, magic mirror, and holographic glass.

4. In claim 3, An optical laminate, wherein the transparent member is glass, and further comprises at least one selected from mesh glass, colored glass, magic mirror, and holographic glass.

5. In claim 1, An optical laminate in which the metal film comprises at least one selected from the group consisting of tin (Sn), copper (Cu), aluminum (Al), nickel (Ni), chromium (Cr), silver (Ag), iron (Fe), gold (Au), cobalt (Co), titanium (Ti), and tungsten (W).

6. In claim 1, An optical laminate in which the active layer of the backplane substrate comprises at least one selected from the group consisting of ITO (Indium tin oxide), ZnO (Zinc oxide), Sn2O3 (Tin oxide), TiO2 (Titanium oxide), IGZO (Indium gallium zinc oxide), ZnSnO (Zinc tin oxide), CdSnO (Cadmium tin oxide), GaSnO (Gallium tin oxide), TiSnO (Titanium tin oxide), InGaZnO (Indium gallium zinc oxide), CuAlO (Copper aluminum oxide), SrCuO (Strontium copper oxide), LaCuOS (Lanthanum copper oxide sulfide), GaN (Gallium nitride), InGaN (Indium gallium nitride), AlGaN (Aluminum gallium nitride), CNT (Carbon nanotube), and InGaAlN (Indium gallium aluminum nitride).

7. In claim 1, An optical laminate, wherein the thickness of the above backplane substrate is 100 nm to 500 nm.

8. In claim 1, The above adhesive film is an optical laminate containing a silicone-based adhesive, having a thickness of 5 μm to 50 μm, and having an adhesion strength of 5B or higher with respect to a substrate.

9. In claim 1, The above backplane substrate further comprises a metal layer formed on the source-drain electrode, comprising at least one selected from the group consisting of silver (Ag), copper (Cu), gold (Au), aluminum (Al), platinum (Pt), palladium (Pd), chromium (Cr), tungsten (W), titanium (Ti), tantalum (Ta), iron (Fe), cobalt (Co), nickel (Ni), zinc (Zn), tellurium (Te), vanadium (V), niobium (Nb), molybdenum (Mo), and alloys thereof.

10. In claim 1, An optical laminate, characterized in that the above backplane substrate has a top-gate structure.

11. A transparent display comprising an optical laminate according to any one of claims 1 to 10.

12. Step (S1) of forming an opening by perforating a portion of a metal film including an adhesive film; Step (S2) of manufacturing a backplane substrate including a transparent member and a pixel electrode; Step (S3) of bonding a metal film including the opening to the backplane substrate; A step (S4) of patterning a metal film bonded to the above backplane substrate; A step (S5) of connecting wiring so that the patterned metal film is connected to the pixel electrode of the backplane substrate; and A method for manufacturing a transparent display, comprising a step (S6) of forming a protective layer to cover the upper portion of the metal film to which the above wiring is connected.

13. In claim 12, In the step (S3) of bonding a metal film including the opening to the backplane substrate, A method for manufacturing a transparent display, wherein the opening of the metal film is bonded so as to correspond to the pixel electrode of the backplane substrate.

14. In claim 12, A method for manufacturing a transparent display, wherein the backplane substrate further includes a source-drain electrode, an active layer, an insulating film, a gate electrode, and a protective film.

Images