Exposure method, substrate treatment method, and exposure device

Abstract

This exposure method comprises: a step for continuously executing position detection processing for position detection marks made on a first substrate and a second substrate on a substrate holding section, the second substrate being different from the first substrate; and a step for continuously executing exposure treatment on the basis of the position detection processing results, in which the first substrate and the second substrate on the substrate holding section are exposed to light subjected to prescribed patterning.

Description

Exposure method, substrate processing method, and exposure apparatus

[0001] The present invention relates to an exposure method, a substrate processing method, and an exposure apparatus.

[0002] Various devices such as liquid crystal display devices and semiconductor devices are manufactured using a photolithography process in which a pattern formed on a mask or the like is transferred onto a photosensitive substrate. In an exposure apparatus used in this photolithography process, for example, after aligning the mask and the photosensitive substrate, the mask is irradiated with exposure light, and the pattern formed on the mask is transferred onto the photosensitive substrate while synchronously scanning a mask stage on which the mask is placed and a substrate stage on which the photosensitive substrate is placed.

[0003] In such an exposure apparatus, a plurality of substrates may be placed on a substrate holder that holds the substrates (see, for example, Patent Document 1).It is desirable to reduce the time required for a series of processes to transfer a pattern formed on a mask onto a photosensitive substrate.

[0004] Japanese Patent Application Laid-Open No. 2020-194007

[0005] According to a first aspect of the disclosure, an exposure method includes successively performing a position detection process of a position detection mark formed on a first substrate on a substrate holding unit and a second substrate different from the first substrate, and successively performing an exposure process of exposing the first substrate on the substrate holding unit and the second substrate on the substrate holding unit to predetermined patterned light based on a processing result of the position detection process.

[0006] According to a second aspect of the disclosure, an exposure method is an exposure method for exposing a first substrate and a second substrate arranged on a substrate holder to predetermined patterned light, and includes performing a portion of an exposure process on the first substrate and the second substrate successively.

[0007] According to a third aspect of the disclosure, a substrate processing method is a substrate processing method that performs a first process and a second process different from the first process on a plurality of substrates arranged on a substrate holder, and after the first process is performed continuously on the plurality of substrates, the second process is performed continuously on the plurality of substrates.

[0008] According to a fourth aspect of the disclosure, an exposure apparatus includes a position detection unit that detects the positions of position detection marks formed on a first substrate and a second substrate that are arranged side by side in a first direction on a substrate holding unit, and an exposure control unit that drives the substrate holding unit in the first direction to expose the first substrate and the second substrate with predetermined patterned light, wherein the position detection unit continuously detects the positions of the position detection marks on the first substrate and the position detection marks on the second substrate, and the exposure control unit exposes the predetermined patterned light to the first substrate and the second substrate based on the position detection results of the position detection marks on the first substrate and the position detection results of the position detection marks on the second substrate.

[0009] The configurations of the embodiments described below may be modified as appropriate, and at least a portion of the configuration may be replaced with other components. Furthermore, components that are not particularly limited in terms of their placement may be placed in any position that can achieve their function, not limited to the placement disclosed in the embodiments.

[0010] FIGS. 1A and 1B are diagrams schematically illustrating the configuration of an exposure apparatus according to an embodiment. FIGS. 2A and 2B are diagrams illustrating an example of substrate placement on a substrate stage. FIG. 3A shows an example of a full-size substrate placed on the substrate stage, and FIG. 3B is a diagram for explaining the processing performed by the exposure apparatus when transferring a mask pattern to a full-size substrate placed on the substrate stage. FIG. 4A is a diagram showing multiple half-size substrates placed on the substrate stage, and FIG. 4B is a diagram for explaining the processing performed by an exposure apparatus according to a comparative example when transferring a mask pattern to multiple half-size substrates placed on the substrate stage. FIGS. 5A to 5D are diagrams (part 1) illustrating the movement of the substrate stage when transferring a mask pattern to multiple half-size substrates according to the processing sequence of the comparative example. FIGS. 6A to 6D are diagrams (part 2) illustrating the movement of the substrate stage when transferring a mask pattern to multiple half-size substrates according to the processing sequence of the comparative example. FIGS. 7A to 7D are diagrams (part 3) showing the movement of the substrate stage when a mask pattern is transferred to multiple half-size substrates according to the processing sequence of the comparative example. FIGS. 8A and 8B are diagrams (part 4) showing the movement of the substrate stage when a mask pattern is transferred to multiple half-size substrates according to the processing sequence of the comparative example. FIG. 9 is a diagram for explaining the processing performed by the exposure apparatus according to the embodiment when a mask pattern is transferred to multiple half-size substrates. FIGS. 10A to 10D are diagrams (part 1) showing the movement of the substrate stage when a mask pattern is transferred to multiple half-size substrates according to the processing sequence of the embodiment. FIGS. 11A to 11D are diagrams (part 2) showing the movement of the substrate stage when a mask pattern is transferred to multiple half-size substrates according to the processing sequence of the embodiment. 12A to 12D are diagrams (part 3) showing the movement of the substrate stage when a mask pattern is transferred onto a plurality of half-size substrates in accordance with the processing sequence according to the embodiment.13A and 13B are diagrams (part 4) showing the movement of the substrate stage when a mask pattern is transferred to multiple half-size substrates in accordance with the processing sequence according to the embodiment. Fig. 14A is a diagram showing the movement path of the substrate stage when a mask pattern is transferred to multiple half-size substrates in accordance with the processing sequence according to the comparative example, and Fig. 14B is a diagram showing the movement path of the substrate stage when a mask pattern is transferred to multiple half-size substrates in accordance with the processing sequence according to the embodiment.

[0011] An exposure apparatus 10 according to an embodiment will be described with reference to the drawings.

[0012] (Configuration of Exposure Apparatus) The configuration of an exposure apparatus 10 according to this embodiment will be described below. Figures 1(A) and 1(B) are diagrams that schematically show the configuration of an exposure apparatus 10 according to this embodiment.

[0013] The exposure apparatus 10 is a scanning stepper (scanner) that transfers a pattern formed on the mask MSK onto the glass substrate (hereinafter referred to as "substrate") P by driving the mask MSK and the glass substrate P in the same direction and at the same speed relative to the projection optical system PL.

[0014] In the following, the direction in which the mask MSK and substrate P are driven during scanning exposure (scanning direction) is referred to as the X-axis direction, the direction in the horizontal plane perpendicular to this is referred to as the Y-axis direction, the direction perpendicular to the X-axis and Y-axis is referred to as the Z-axis direction, and the rotation (tilt) directions around the X-axis, Y-axis, and Z-axis are referred to as the θx, θy, and θz directions, respectively.

[0015] The exposure apparatus 10 includes an illumination system IOP, a mask stage MST that holds a mask MSK, a projection optical system PL, an alignment system ALG (see FIG. 1B), a body 70 that supports these, a substrate stage PST that holds a substrate P, and a control system CNT for these, etc. The control system CNT controls all of the components of the exposure apparatus 10.

[0016] The body 70 includes a base (vibration isolation table) 71, columns 72A and 72B, an optical surface plate 73, a support 74, and a slide guide 75. The base (vibration isolation table) 71 is placed on a floor F and supports the columns 72A, 72B, etc., while isolating vibrations from the floor F. The columns 72A and 72B each have a frame shape, with the column 72A being placed inside the column 72B. The optical surface plate 73 has a flat plate shape and is fixed to the ceiling of the column 72A. The support 74 is supported by the ceiling of the column 72B via a slide guide 75. The slide guide 75 includes an air ball lifter and a positioning mechanism, and positions the support 74 (i.e., the mask stage MST, described later) at an appropriate position in the X-axis direction relative to the optical surface plate 73.

[0017] The illumination system IOP is disposed above the body 70. The illumination system IOP irradiates the mask MSK with illumination light IL.

[0018] The mask stage MST is supported by a support 74. A mask MSK having a pattern surface (the lower surface in FIGS. 1A and 1B) on which a circuit pattern is formed is fixed to the mask stage MST by, for example, vacuum suction (or electrostatic suction). The mask stage MST is driven by a drive system including, for example, a linear motor at a predetermined stroke in the scanning direction (X-axis direction), and is also driven slightly in the non-scanning directions (Y-axis direction and θz direction).

[0019] Position information of the mask stage MST in the XY plane (including rotation information in the θz direction) is measured by an interferometer system. The interferometer system measures the position of the mask stage MST by irradiating a measurement beam onto a movable mirror (or a mirror-finished reflective surface (not shown)) provided at the end of the mask stage MST and receiving the reflected light from the movable mirror. The measurement results are supplied to a control system CNT, which drives the mask stage MST via a drive system in accordance with the measurement results of the interferometer system.

[0020] The projection optical system PL is supported on an optical surface plate 73 below (on the -Z side of) the mask stage MST. The projection optical system PL is configured similarly to the projection optical system disclosed in, for example, U.S. Pat. No. 5,729,331. The projection optical system PL includes multiple (e.g., seven) projection optical units 100 (multi-lens projection optical units) arranged, for example, in a staggered pattern, to project the pattern image of the mask MSK. This forms a rectangular image field with the Y-axis direction as its longitudinal direction. Here, four projection optical units 100 are arranged at predetermined intervals in the Y-axis direction, and the remaining three projection optical units 100 are arranged at predetermined intervals in the Y-axis direction, spaced apart from the four projection optical units 100 on the +X side. Each of the multiple projection optical units 100 is, for example, a bilaterally telecentric, 1x1 system that forms an erect, normal image. The multiple projection areas of the staggered projection optical units 100 are collectively referred to as the exposure area.

[0021] When an illumination area on the mask MSK is illuminated by illumination light IL from the illumination system IOP, the illumination light IL that has passed through the mask MSK forms a projected image (partial erect image) of the circuit pattern of the mask MSK within that illumination area, via the projection optical system PL, in an irradiation area (exposure area (conjugate to the illumination area)) on the substrate P, which is arranged on the image plane side of the projection optical system PL. Here, a photosensitive material (resist) is applied to the surface of the substrate P. By synchronously driving the mask stage MST and the substrate stage PST, i.e., by driving the mask MSK in the scanning direction (X-axis direction) relative to the illumination area (illumination light IL) and driving the substrate P in the same scanning direction relative to the exposure area (illumination light IL), the substrate P is exposed and the pattern of the mask MSK is transferred onto the substrate P.

[0022] The substrate stage PST is placed on a base (vibration isolation table) 71 below (on the -Z side of) the projection optical system PL. The substrate P is held on the substrate stage PST via a substrate holder (not shown). Figures 2A and 2B are diagrams showing an example of placing a substrate on the substrate stage PST.

[0023] In this embodiment, as shown in FIG. 2A, the substrate stage PST is large enough to accommodate, for example, a G6 (1850 x 1500 mm)-sized substrate P without it protruding beyond the substrate stage PST. In other words, as shown in FIG. 2B, the substrate stage PST is large enough to accommodate two G6-half-size substrates HP, which are formed by dividing a G6 (1850 x 1500 mm)-sized substrate P in half. The size of the substrate P placed on the substrate stage PST is not limited to the G6 size; it may be larger or smaller than the G6 size. When the size of the substrate P placed on the substrate stage PST is larger than the G6 size, the size of the substrate stage PST is designed so that the substrate P can be placed without protruding beyond the substrate stage PST. Furthermore, the number of substrates HP placed on the substrate stage PST is not limited to one or two, but may be three or more. In the following description, a G6-size substrate may be referred to as a full-size substrate, and a G6-half-size substrate may be referred to as a half-size substrate.

[0024] The substrate stage PST is driven by a drive system including, for example, a linear motor at a predetermined stroke in the scanning direction (X-axis direction). The substrate stage PST is capable of step movement in the Y-axis direction and is also driven by minute movements in the θz direction.

[0025] Position information of the substrate stage PST in the XY plane (including rotation information (yawing amount (rotation amount θz in the θz direction), pitching amount (rotation amount θy in the θy direction), and rolling amount (rotation amount θx in the θx direction))) is measured by an interferometer system. The interferometer system measures the position of the substrate stage PST by irradiating a measurement beam from the optical surface plate 73 to a movable mirror (or a mirror-finished reflective surface (not shown)) provided at the end of the substrate stage PST and receiving the reflected light from the movable mirror. Furthermore, as described in JP 2008-270342 A, for example, the interferometer measures the position of the substrate stage PST in the Z direction by irradiating a measurement beam to a measurement mirror that is provided on the substrate stage PST and has a reflective surface inclined at 45 degrees with respect to the XZ plane (and / or YZ plane). The measurement results are supplied to a control system CNT, and the control system CNT drives the substrate stage PST in accordance with the measurement results of the interferometer system.

[0026] As shown in FIG. 1B, the alignment system ALG is provided between the projection optical units 100 spaced apart in the X-axis direction, and detects the alignment mark ALM provided on the full-size substrate P or half-size substrate HP.

[0027] Figure 3(A) shows an example of a full-size substrate P placed on a substrate stage PST. In Figure 3(A), a plurality of exposure target areas (shot areas) EA1 to EA4 onto which an image of the pattern of the mask MSK is projected are set on the surface of the full-size substrate P. In this embodiment, four exposure target areas EA1 to EA4 are set on the surface of the full-size substrate P. The exposure target areas EA1 and EA2 are arranged at a predetermined interval in the Y-axis direction, and the exposure target areas EA3 and EA4 are also arranged at a predetermined interval in the Y-axis direction. The exposure target areas EA1 and EA2 are arranged on the -X side of the exposure target areas EA3 and EA4.

[0028] A plurality of alignment marks ALM (six in this embodiment) are arranged at predetermined intervals in the Y-axis direction on the surface of the full-size substrate P. These alignment marks ALM are arranged at four locations in the X-axis direction.

[0029] Alignment system ALG detects alignment marks ALM provided on full-size substrate P. In this embodiment, six alignment systems ALG are arranged in correspondence with six alignment marks ALM arranged spaced apart in the Y-axis direction on full-size substrate P. That is, in this embodiment, six alignment systems ALG are arranged at predetermined intervals in the Y-axis direction.

[0030] When transferring the pattern of the mask MSK to a full-size substrate P placed on the substrate stage PST, the exposure apparatus 10 performs alignment measurement prior to exposure, and uses the results to expose the full-size substrate P with light patterned by the mask MSK.

[0031] 3(B) is a diagram for explaining the processes that are performed by the exposure apparatus 10 when transferring the pattern of the mask MSK to the full-size substrate P placed on the substrate stage PST. In FIG. 3(B), the order in which each process is performed is indicated by a circled number. Of the alignment marks ALM arranged at four locations in the X-axis direction, the group of alignment marks ALM closest to the edge on the -X side of the full-size substrate P is appropriately referred to as column R1, the group of alignment marks ALM arranged on the +X side of column R1 is appropriately referred to as column R2, the group of alignment marks ALM arranged on the +X side of column R2 is appropriately referred to as column R3, and the group of alignment marks ALM arranged on the +X side of column R3 is appropriately referred to as column R4.

[0032] When transferring the pattern of the mask MSK onto the full-size substrate P, the exposure apparatus 10 first uses the alignment system ALG to detect the positions of the six alignment marks ALM contained in each column in the order of column R1, column R2, column R3, and column R4 (alignment measurement).

[0033] Next, the exposure apparatus 10 uses the results of the alignment measurement to expose the full-size substrate P with light patterned by the mask MSK. In the exposure process, the mask stage MST and the substrate stage PST are synchronously driven in the X-axis direction in accordance with instructions from the control system CNT, and scanning exposure is performed on the first exposure target area EA4 on the full-size substrate P. When scanning exposure of the first exposure target area EA4 is completed, the control system CNT moves (steps) the substrate stage PST to a position corresponding to the second exposure target area EA3. Then, scanning exposure is performed on the second exposure target area EA3. Similarly, when scanning exposure of the exposure target area EA3 is completed, the control system CNT moves the substrate stage PST to a position corresponding to the third exposure target area EA1. Then, scanning exposure is performed on the third exposure target area EA1. When scanning exposure for the exposure target area EA1 is completed, the control system CNT moves the substrate stage PST to a position corresponding to the fourth exposure target area EA2. Then, scanning exposure corresponding to the fourth exposure target area EA2 is performed. When scanning exposure for the fourth exposure target area EA2 is completed, the control system CNT moves the substrate stage PST to a position from which the exposed full-size substrate P is carried out. In this way, by repeating stepping between exposure target areas on the full-size substrate P and scanning exposure for the exposure target areas, the pattern of the mask MSK is transferred to all exposure target areas on the substrate P.

[0034] In the exposure apparatus 10 according to this embodiment, when a pattern of a mask MSK is transferred to a full-size substrate P, the order in which the position detection processes of the alignment marks ALM included in columns R1, R2, R3, and R4 are performed, and the order in which the exposure processes are performed on the exposure target areas EA1 to EA4, are determined so as to minimize the distance traveled by the substrate stage PST from the position where the full-size substrate P is placed on the substrate stage PST, through the position detection process and exposure process, until the substrate stage PST stops at the position where the exposed full-size substrate P is transported out.

[0035] Here, consider the case where a half-size substrate HP1 and a half-size substrate HP2 are placed on the substrate stage PST, and the pattern of the mask MSK is transferred onto each of the half-size substrates HP1 and HP2.

[0036] 4A is a diagram showing half-size substrates HP1 and HP2 placed on a substrate stage PST. Exposure target areas EA11 and EA12 are set on each of the half-size substrates HP1 and HP2. The exposure target areas EA11 and EA12 are arranged at a predetermined interval in the Y-axis direction. In addition, a plurality of alignment marks ALM are formed at each of both ends in the X-axis direction. The group of alignment marks ALM closest to the edge on the -X side is appropriately referred to as row R11, and the group of alignment marks ALM closest to the edge on the +X side is appropriately referred to as row R12.

[0037] When transferring the pattern of the mask MSK to a half-size substrate using an exposure apparatus that transfers the pattern of the mask MSK to a full-size substrate P, it is possible to utilize the control program, etc. that is used when transferring the pattern of the mask MSK to the full-size substrate P. Here, a case where the pattern of the mask MSK is transferred to a half-size substrate HP by utilizing the control program, etc. that is used when transferring the pattern of the mask MSK to the full-size substrate P will be described as a comparative example.

[0038] 4B is a diagram for explaining the processing that is performed in the exposure apparatus according to the comparative example when transferring the pattern of the mask MSK onto half-size substrates HP1 and HP2 placed on the substrate stage PST. In FIG. 4B as well, the order in which the processing is performed is indicated by circled numbers.

[0039] As described above, for one full-size substrate P, alignment measurement is performed, and then scanning exposure is performed on each exposure target area. Therefore, when utilizing a control program or the like used when transferring the pattern of the mask MSK to the full-size substrate P, it is conceivable to perform alignment measurement on one half-size substrate, perform scanning exposure on each exposure target area based on the results, and then perform alignment measurement on the other half-size substrate, and perform scanning exposure on each exposure target area based on the results. In other words, alignment measurement and scanning exposure are performed consecutively for each half-size substrate.

[0040] For example, alignment system ALG of the exposure apparatus according to the comparative example detects the positions of six alignment marks ALM included in row R11 near the edge on the -X side of half-size substrate HP1, which is closer to the side (+X side) into which half-size substrates HP1 and HP2 are carried in. Next, alignment system ALG detects the positions of six alignment marks ALM included in row R12 near the edge on the +X side of half-size substrate HP1.

[0041] When the position detection of the alignment marks ALM included in row R11 and the position detection of the alignment marks ALM included in row R12 are completed, the detection results are used to perform scanning exposure on the exposure target area EA12. When the scanning exposure on the exposure target area EA12 is completed, the control system CNT moves (steps) the substrate stage PST to a position corresponding to the second exposure target area EA11. Then, scanning exposure is performed on the second exposure target area EA11.

[0042] When scanning exposure of all exposure target areas of the half-size substrate HP1 is completed, the control system CNT moves the substrate stage PST to a position where it starts detecting the positions of the alignment marks ALM included in the row R11 of the half-size substrate HP2.

[0043] Next, alignment system ALG of the exposure apparatus according to the comparative example detects the positions of six alignment marks ALM included in row R11 near the edge on the -X side of half-size substrate HP2. Next, alignment system ALG detects the positions of six alignment marks ALM included in row R12 near the edge on the +X side of half-size substrate HP2.

[0044] After the position detection of the alignment marks ALM included in row R11 and the position detection of the alignment marks ALM included in row R12 are completed, the detection results are used to perform scanning exposure on the exposure target area EA11 of the half-size substrate HP2. After the scanning exposure of the exposure target area EA11 is completed, the control system CNT moves (steps) the substrate stage PST to a position corresponding to the second exposure target area EA12. Then, scanning exposure is performed on the second exposure target area EA12.

[0045] When scanning exposure of all exposure target areas of the half-size substrate HP2 is completed, the control system CNT moves the substrate stage PST to the carry-out position for the half-size substrates HP1 and HP2, thereby completing a series of processes for transferring the pattern of the mask MSK onto the half-size substrates HP1 and HP2.

[0046] 5A to 8B are diagrams showing the movement of the substrate stage PST when the pattern of the mask MSK is transferred onto the half-size substrates HP1 and HP2 in accordance with the processing sequence described above.

[0047] 5A, the substrate stage PST is located at a position (loading position) where half-size substrates HP1 and HP2 are loaded onto the substrate stage PST. In FIG. 5A, the half-size substrates HP1 and HP2 are loaded from the +X side.

[0048] When the loading of the half-size substrates HP1 and HP2 is completed, the substrate stage PST moves in the -X direction and stops at a position where it starts detecting the positions of the alignment marks ALM in row R11 of the half-size substrate HP1, as shown in Fig. 5(B). In Fig. 5(A) to Fig. 8(B), it is assumed that a plurality of alignment systems ALG corresponding to a plurality of alignment marks ALM are provided on the Y axis.

[0049] When position detection of the alignment marks ALM in row R11 of the half-size substrate HP1 is completed, the substrate stage PST moves further in the -X direction and stops at a position where position detection of the alignment marks ALM in row R12 of the half-size substrate HP1 begins, as shown in Figure 5 (C).

[0050] When the position detection of the alignment marks ALM in row R12 of the half-size substrate HP1 is completed, the substrate stage PST moves to a position where scanning exposure of the exposure target area EA12 of the half-size substrate HP1 begins, as shown in FIG. 5(D).

[0051] The substrate stage PST and mask stage MST are driven synchronously in the +X direction, so that the exposure target area EA12 is exposed with light patterned by the mask MSK. As shown in FIG. 6A, the substrate stage PST stops at a position where scanning exposure of the exposure target area EA12 of the half-size substrate HP1 is completed.

[0052] When scanning exposure of the exposure target area EA12 is completed, the substrate stage PST moves (steps) in the -Y direction to a position where scanning exposure of the exposure target area EA11 of the half-size substrate HP1 begins, as shown in FIG. 6(B).

[0053] The substrate stage PST and mask stage MST are driven synchronously in the -X direction, so that the exposure target area EA11 is exposed with light patterned by the mask MSK. As shown in FIG. 6C, the substrate stage PST stops at the scanning exposure end position for the exposure target area EA11 of the half-size substrate HP1.

[0054] Next, the substrate stage PST moves in the +X direction and the +Y direction, and stops at a position where it starts detecting the positions of the alignment marks ALM in row R11 of the half-size substrate HP2, as shown in FIG. 6(D).

[0055] When position detection of the alignment marks ALM in row R11 of the half-size substrate HP2 is completed, the substrate stage PST moves in the -X direction and stops at a position where position detection of the alignment marks ALM in row R12 of the half-size substrate HP2 begins, as shown in Figure 7 (A).

[0056] When the position detection of the alignment marks ALM in row R12 of the half-size substrate HP2 is completed, the substrate stage PST moves in the -X and -Y directions and stops at a position where scanning exposure of the exposure target area EA11 of the half-size substrate HP2 begins, as shown in Figure 7 (B).

[0057] The substrate stage PST and mask stage MST are driven synchronously in the +X direction, so that the exposure target area EA11 is exposed with light patterned by the mask MSK. As shown in FIG. 7C, the substrate stage PST stops at the scanning exposure end position for the exposure target area EA11 of the half-size substrate HP2.

[0058] When scanning exposure of the exposure target area EA11 is completed, the substrate stage PST moves in the -X direction and the +Y direction and stops at a position where scanning exposure of the exposure target area EA12 of the half-size substrate HP2 begins, as shown in Figure 7 (D).

[0059] The substrate stage PST and mask stage MST are driven synchronously in the +X direction, so that the exposure target area EA12 is exposed with light patterned by the mask MSK. As shown in FIG. 8A, the substrate stage PST stops at a position where scanning exposure of the exposure target area EA12 of the half-size substrate HP2 is completed.

[0060] When scanning exposure of half-size substrate HP1 and half-size substrate HP2 is completed, the substrate stage PST moves to a position where the exposed half-size substrates HP1 and HP2 are removed, as shown in Figure 8 (B), and the series of processes for transferring the pattern of the mask MSK onto multiple half-size substrates HP1 and HP2 is completed.

[0061] Here, it is desirable to shorten as much as possible the time required for the series of processes for transferring the pattern of the mask MSK onto the half-size substrates HP1 and HP2. However, if the processes are performed in the order described in the comparative example, the time required for the series of processes may not be minimized.

[0062] Therefore, the exposure apparatus 10 according to this embodiment performs the position detection process for the alignment mark ALM and the exposure process for the exposure target area in the following order: Figure 9 is a diagram for explaining the processes performed by the exposure apparatus 10 according to this embodiment when transferring the pattern of the mask MSK onto half-size substrates HP1 and HP2. In Figure 9, the order in which each process is performed is indicated by a circled number.

[0063] In this embodiment, the exposure apparatus 10 first uses the alignment system ALG to sequentially detect the positions of the six alignment marks ALM included in row R11 of the half-size substrate HP2, which is positioned far from the +X side where the half-size substrates HP1 and HP2 are loaded, and then to detect the positions of the six alignment marks ALM included in row R12.

[0064] Then, when the position detection process for the alignment marks ALM formed on the half-size substrate HP2 is completed, the exposure apparatus 10 sequentially detects the positions of the six alignment marks ALM included in row R11 of the half-size substrate HP1, and then the six alignment marks ALM included in row R12. That is, in this embodiment, the exposure apparatus 10 successively performs position detection processes for the alignment marks ALM formed on the half-size substrates HP2 and HP1 on the substrate stage PST. Also, in this embodiment, the position detection process is performed in order, starting with the half-size substrate HP2, which is located farthest from the side (+X side) on the substrate stage PST where the half-size substrates HP1 and HP2 are carried in in the X-axis direction.

[0065] When the position detection process for the alignment marks ALM formed on the half-size substrates HP1 and HP2 is completed, the control system CNT moves the substrate stage PST to a position where scanning exposure of the exposure target area EA12 on the half-size substrate HP1 begins. The control system CNT synchronously drives the mask stage MST and the substrate stage PST in the X-axis direction, and performs scanning exposure of the first exposure target area EA12 on the half-size substrate HP1.

[0066] When scanning exposure for the first exposure target area EA12 is completed, the control system CNT moves (steps) the substrate stage PST to a position corresponding to the second exposure target area EA11, and performs scanning exposure for the second exposure target area EA11.

[0067] When scanning exposure of all exposure target areas on the half-size substrate HP1 is completed, the control system CNT moves the substrate stage PST to a position where scanning exposure of the exposure target area EA11 on the half-size substrate HP2 begins. The control system CNT synchronously drives the mask stage MST and the substrate stage PST in the X-axis direction, and performs scanning exposure of the first exposure target area EA11 on the half-size substrate HP2.

[0068] When scanning exposure of the first exposure target area EA11 is completed, the control system CNT moves (steps) the substrate stage PST to a position corresponding to the second exposure target area EA12. Then, scanning exposure is performed on the second exposure target area EA12. In this manner, in this embodiment, of the half-size substrates HP1 and HP2, exposure processing is performed in order starting with the half-size substrate HP1 that is positioned closest to the side (+X side) on the substrate stage PST where the half-size substrates HP1 and HP2 are carried in in the X-axis direction.

[0069] When scanning exposure of all exposure target areas of the half-size substrate HP2 is completed, the control system CNT moves the substrate stage PST to the carry-out position for the half-size substrates HP1 and HP2, thereby completing a series of processes for transferring the pattern of the mask MSK onto the half-size substrates HP1 and HP2.

[0070] In this way, by successively executing the position detection process for the alignment marks ALM formed on the half-size substrates HP2 and HP1 on the substrate stage PST, and then successively executing the exposure process for exposing the half-size substrates HP1 and HP2 on the substrate stage PST with predetermined patterned light based on the processing results of the position detection process, it is possible to shorten the time required for the series of operations. This point will be explained below.

[0071] 10A to 13B are diagrams showing the movement of the substrate stage PST when the pattern of the mask MSK is transferred onto the half-size substrates HP1 and HP2 in accordance with the processing sequence according to this embodiment.

[0072] 10A, the substrate stage PST is located at a position (loading position) where half-size substrates HP1 and HP2 are loaded onto the substrate stage PST. In FIG. 10A, the half-size substrates HP1 and HP2 are loaded from the +X side.

[0073] When the loading of the half-size substrates HP1 and HP2 is completed, the substrate stage PST moves in the -X direction and stops at a position where it starts detecting the positions of the alignment marks ALM in row R11 of the half-size substrate HP2, as shown in Figure 10(B). In Figures 10(A) to 13(B), it is assumed that a plurality of alignment systems ALG corresponding to a plurality of alignment marks ALM are provided on the Y axis.

[0074] When position detection of the alignment marks ALM in row R11 of the half-size substrate HP2 is completed, the substrate stage PST moves further in the -X direction and stops at a position where position detection of the alignment marks ALM in row R12 of the half-size substrate HP2 begins, as shown in Figure 10 (C).

[0075] When the position detection process for the alignment marks ALM in row R12 of the half-size substrate HP2 is completed, the substrate stage PST moves in the -X direction and stops at a position where it starts detecting the positions of the alignment marks ALM in row R11 of the half-size substrate HP1, as shown in Figure 10 (D).

[0076] When position detection of the alignment marks ALM in row R11 of the half-size substrate HP1 is completed, the substrate stage PST moves in the -X direction and stops at a position where position detection of the alignment marks ALM in row R12 of the half-size substrate HP1 begins, as shown in Figure 11 (A).

[0077] When the position detection of the alignment marks ALM in row R12 of the half-size substrate HP1 is completed, the substrate stage PST moves in the -X direction and the +Y direction and stops at a position where scanning exposure of the exposure target area EA12 of the half-size substrate HP1 begins, as shown in Figure 11 (B).

[0078] The substrate stage PST and mask stage MST are driven synchronously in the +X direction, so that the exposure target area EA12 is exposed with light patterned by the mask MSK. As shown in FIG. 11C, the substrate stage PST stops at a position where scanning exposure of the exposure target area EA12 of the half-size substrate HP1 is completed.

[0079] When scanning exposure of the exposure target area EA12 is completed, the substrate stage PST moves (steps) in the -Y direction and stops at a position where scanning exposure of the exposure target area EA11 of the half-size substrate HP1 begins, as shown in FIG. 11(D).

[0080] The substrate stage PST and mask stage MST are driven synchronously in the -X direction, so that the exposure target area EA11 is exposed with light patterned by the mask MSK. As shown in Figure 12(A), the substrate stage PST stops at a position where scanning exposure of the exposure target area EA11 of the half-size substrate HP1 is completed.

[0081] Next, the substrate stage PST moves in the +X direction and stops at a position where scanning exposure of the exposure target area EA11 of the half-size substrate HP2 starts, as shown in FIG. 12(B).

[0082] The substrate stage PST and mask stage MST are driven synchronously in the +X direction, so that the exposure target area EA11 is exposed with light patterned by the mask MSK. As shown in FIG. 12C, the substrate stage PST stops at a position where scanning exposure of the exposure target area EA11 of the half-size substrate HP2 is completed.

[0083] Next, the substrate stage PST moves in the -X direction and the +Y direction, and stops at a position where scanning exposure of the exposure target area EA12 of the half-size substrate HP2 starts, as shown in FIG. 12(D).

[0084] The substrate stage PST and mask stage MST are driven synchronously in the +X direction, so that the exposure target area EA12 is exposed with light patterned by the mask MSK. As shown in FIG. 13A, the substrate stage PST stops at a position where scanning exposure of the exposure target area EA12 of the half-size substrate HP2 is completed.

[0085] When scanning exposure of the half-size substrates HP1 and HP2 is completed, the substrate stage PST moves to a position where the exposed half-size substrates HP1 and HP2 are carried out, as shown in Fig. 13(B). This completes the series of processes for transferring the pattern of the mask MSK onto the half-size substrates HP1 and HP2.

[0086] FIG. 14A is a diagram showing the movement path of the substrate stage PST when the pattern of the mask MSK is transferred onto half-size substrates HP1 and HP2 in a processing order according to a comparative example.

[0087] In Fig. 14(A), position P1 is the center position of the substrate stage PST in Fig. 5(A), position P2 is the center position of the substrate stage PST in Fig. 5(B), position P3 is the center position of the substrate stage PST in Fig. 5(C), and position P4 is the center position of the substrate stage PST in Fig. 5(D). Position P5 is the center position of the substrate stage PST in Fig. 6(A), position P6 is the center position of the substrate stage PST in Fig. 6(B), position P7 is the center position of the substrate stage PST in Fig. 6(C), and position P8 is the center position of the substrate stage PST in Fig. 6(D). Position P9 is the center position of the substrate stage PST in Fig. 7(A), position P10 is the center position of the substrate stage PST in Fig. 7(B), position P11 is the center position of the substrate stage PST in Fig. 7(C), and position P12 is the center position of the substrate stage PST in Fig. 7(D). Position P13 is the center position of the substrate stage PST in Fig. 8A, and position P14 is the center position of the substrate stage PST in Fig. 8B. As shown in Fig. 14A, the center of the substrate stage PST moves in order from position P1 to position P14.

[0088] FIG. 14B is a diagram showing the movement path of the substrate stage PST when the pattern of the mask MSK is transferred onto the half-size substrates HP1 and HP2 in the processing order according to this embodiment.

[0089] In Fig. 14(B), position P1 is the center position of the substrate stage PST in Fig. 10(A), position P2 is the center position of the substrate stage PST in Fig. 10(B), position P3 is the center position of the substrate stage PST in Fig. 10(C), and position P4 is the center position of the substrate stage PST in Fig. 10(D). Position P5 is the center position of the substrate stage PST in Fig. 11(A), position P6 is the center position of the substrate stage PST in Fig. 11(B), position P7 is the center position of the substrate stage PST in Fig. 11(C), and position P8 is the center position of the substrate stage PST in Fig. 11(D). Position P9 is the center position of the substrate stage PST in Fig. 12(A), position P10 is the center position of the substrate stage PST in Fig. 12(B), position P11 is the center position of the substrate stage PST in Fig. 12(C), and position P12 is the center position of the substrate stage PST in Fig. 12(D). Position P13 is the center position of the substrate stage PST in Fig. 13(A), and position P14 is the center position of the substrate stage PST in Fig. 13(B).

[0090] The center of the substrate stage PST moves sequentially from position P1 to position P14. By successively performing the position detection processing of the alignment marks ALM of the half-size substrates HP1 and HP2 and then successively executing the exposure processing of the half-size substrates HP1 and HP2, the movement path of the substrate stage PST is simplified and the movement distance of the substrate stage PST is also shortened, as shown in FIG. 14B, compared to the comparative example. Specifically, the movement distance from position P7 to position P10 in FIG. 14A is changed to the movement distance from position P9 to position P10 in FIG. 14B, so the overall movement distance of the substrate stage PST is shortened. This shortens the movement time of the substrate stage PST, thereby shortening the time required for the series of processes to transfer the pattern of the mask MSK to multiple half-size substrates HP1 and HP2.

[0091] As described above in detail, according to this embodiment, the exposure apparatus 10 is equipped with an alignment system ALG that detects the positions of the alignment marks ALM formed on the half-size substrate HP1 and the half-size substrate HP2 that are arranged side by side in the X-axis direction on the substrate stage PST, and a control system CNT that drives the substrate stage PST in the X-axis direction to expose the half-size substrate HP1 and the half-size substrate HP2 with light patterned by the mask MSK. The alignment system ALG successively detects the positions of the alignment marks ALM on the half-size substrate HP1 and the half-size substrate HP2. The control system CNT exposes the half-size substrate HP1 and the half-size substrate HP2 with the light patterned by the mask MSK, based on the position detection results of the alignment marks ALM on the half-size substrate HP1 and the half-size substrate HP2. This allows the distance traveled by the substrate stage PST to be shortened, as explained using Figure 14 (B), thereby shortening the time required to transfer the pattern of the mask MSK onto multiple half-size substrates HP1 and HP2 placed on the substrate stage PST.

[0092] Furthermore, in this embodiment, alignment system ALG performs position detection of the alignment marks ALM for half-size substrates HP1 and HP2, starting with half-size substrate HP2, which is arranged in a position farthest from the side (+X side) on the substrate stage PST where the half-size substrates HP1 and HP2 are carried in in the X axis direction. This makes it possible to shorten the distance that the substrate stage PST moves in order to detect the positions of the alignment marks ALM for half-size substrates HP1 and HP2, for example, compared to when position detection of the alignment marks ALM is performed in order starting with half-size substrate HP1, which is arranged in a position closer to the side (+X side) where the half-size substrates HP1 and HP2 are carried in, and therefore the movement time of the substrate stage PST can be shortened.

[0093] Furthermore, in this embodiment, the control system CNT exposes the light patterned by the mask MSK to the half-size substrates HP1 and HP2, in order, starting with the half-size substrate HP1 that is positioned closest to the side (+X side) on the substrate stage PST where the half-size substrates HP1 and HP2 are carried in in the X-axis direction. This makes it possible to shorten the movement distance of the substrate stage PST compared to when alignment measurement and exposure processing are repeatedly performed alternately, and therefore the movement time of the substrate stage PST can be shortened.

[0094] In the above embodiment, the half-size substrates HP1 and HP2 on the substrate stage PST are loaded from the +X side and unloaded to the +X side, but this is not limited to this. The half-size substrates HP1 and HP2 on the substrate stage PST may also be loaded from the -X side and unloaded to the -X side. In this case, the execution order of each process may be determined so that the movement path of the substrate stage PST is a path obtained by inverting the movement path shown in FIG. 14B around the Y axis. Also, the half-size substrates HP1 and HP2 on the substrate stage PST may be loaded from the +X side and unloaded to the -X side. In this case, the execution order of each process may be determined so that the sum of the movement distance of the substrate stage PST to the position where the position detection process for the half-size substrate HP1 is performed, the movement distance to the position where the position detection process for the half-size substrate HP2 is performed, the movement distance to the position where the exposure process for the half-size substrate HP1 is started, and the movement distance to the position where the exposure process for the half-size substrate HP2 is started is minimized. That is, the order in which the processes are performed can be determined so that the movement distance of the substrate stage PST from when the substrate is carried in to when it is carried out is minimized.

[0095] In the above embodiment, the exposure apparatus has been described as being used to manufacture liquid crystal display devices (flat panel displays), but the exposure apparatus may also be used to manufacture semiconductors by exposing a plurality of silicon wafers.

[0096] In addition, in the above embodiment, the case where the substrate is exposed to light patterned by a mask MSK has been described, but the substrate may also be exposed to light patterned by a spatial light modulator such as a DMD (Digital Mirror Device).

[0097] The above-described embodiment is a preferred example of the present invention, but the present invention is not limited to this and can be modified in various ways without departing from the spirit of the present invention.

[0098] 10 Exposure device ALG Alignment system ALM Alignment mark CNT Control system MSK Mask MST Mask stage P Substrate HP, HP1, HP2 Half-size substrate PL Projection optical system PST Substrate stage

Claims

1. An exposure method comprising: successively performing a position detection process for a position detection mark formed on a first substrate on a substrate holding unit and a second substrate different from the first substrate; and successively performing an exposure process for exposing the first substrate on the substrate holding unit and the second substrate on the substrate holding unit to predetermined patterned light based on the results of the position detection process.

2. The exposure method according to claim 1, wherein the first substrate and the second substrate are arranged side by side in a first direction on the substrate holding unit, and the position detection process is performed in order of the first substrate and the second substrate, starting with the substrate arranged in a position farthest from the side on the substrate holding unit where the first substrate and the second substrate are carried in in the first direction.

3. The exposure method according to claim 2, wherein the exposure process is performed in order of the first substrate and the second substrate, starting with the substrate that is positioned closest to the side of the substrate holder where the first substrate and the second substrate are carried in in the first direction.

4. The method includes: moving the substrate holding unit to a position where the position detection process for the first substrate is performed; moving the substrate holding unit to a position where the position detection process for the second substrate is performed; moving the substrate holding unit to a position where the exposure process for one of the first substrate and the second substrate is started after the position detection process for the first substrate and the position detection process for the second substrate are completed; and moving the substrate holding unit to a position where the exposure process for the other of the first substrate and the second substrate is started after the exposure process for the one substrate is completed, 2. The exposure method according to claim 1, wherein the position detection processing of the first substrate, the position detection processing of the second substrate, the exposure processing of the one substrate, and the exposure processing of the other substrate are performed in an order that minimizes the sum of the movement distance of the substrate holding unit to a position where the position detection processing of the first substrate is performed, the movement distance of the second substrate to a position where the position detection processing is performed, the movement distance to a position where the exposure processing of the one substrate is started, and the movement distance to a position where the exposure processing of the other substrate is started.

5. An exposure method for exposing a first substrate and a second substrate placed on a substrate holder to predetermined patterned light, the exposure method comprising: performing a part of an exposure process on the first substrate and the second substrate successively.

6. The exposure method according to claim 5, wherein part of the exposure process is a position detection process for position detection marks formed on the first substrate and the second substrate.

7. A substrate processing method for performing a first process and a second process different from the first process on a plurality of substrates placed on a substrate holder, the substrate processing method comprising: performing the first process continuously on the plurality of substrates; and then performing the second process continuously on the plurality of substrates.

8. A substrate processing method according to claim 7, wherein the first process is a position detection process for position detection marks formed on each of the plurality of substrates, and the second process is an exposure process for exposing each of the plurality of substrates to light having a predetermined pattern.

9. An exposure apparatus comprising: a position detection unit that detects the positions of position detection marks formed on a first substrate and a second substrate arranged side by side in a first direction on a substrate holding unit; and an exposure control unit that drives the substrate holding unit in the first direction to expose the first substrate and the second substrate with predetermined patterned light, wherein the position detection unit continuously detects the positions of the position detection marks on the first substrate and the position detection marks on the second substrate, and the exposure control unit exposes the first substrate and the second substrate with the predetermined patterned light based on the position detection results of the position detection marks on the first substrate and the position detection results of the position detection marks on the second substrate.

10. The exposure apparatus described in claim 9, wherein the position detection unit performs position detection of the position detection mark on the first substrate and the second substrate in order, starting with the substrate that is located farthest from the side on the substrate holding unit where the first substrate and the second substrate are carried in in the first direction.

11. The exposure apparatus according to claim 10, wherein the exposure control unit exposes the predetermined patterned light to the first substrate and the second substrate in the order of the substrate that is positioned closest to the side of the substrate holding unit where the first substrate and the second substrate are carried in in the first direction.

Images