Drawing device

Abstract

The purpose of the present invention is to achieve drawing of a high-definition pattern by reducing a beam width in a drawing device.　This drawing device comprises: an optical system (42) that guides light from a light source unit (41) onto a substrate (9) along an optical axis; a spatial light modulator (46) that is disposed at a first position conjugate to the surface of the substrate (9) and has a plurality of light modulation elements to be irradiated with light from the light source unit (41); a phase shift mask (51) that is disposed at a second position conjugate to the surface of the substrate (9); and a movement mechanism that moves the laser beam irradiation positions of the plurality of light modulation elements relative to the surface. The phase shift mask (51) is provided with a member that causes a phase difference between light incident on a central part in a predetermined direction perpendicular to the optical axis and light incident on both outer sides of the central part in a light irradiation region corresponding to each of the optical modulation elements, and limits the beam width of the light beam that is modulated by each of the optical modulation elements and applied to the surface of the substrate (9).

Description

drawing device

[0001] The present invention relates to a drawing device. [Reference to Related Applications] This application claims the benefit of priority from Japanese Patent Application JP2024-69900, filed on April 23, 2024, the entire disclosure of which is incorporated herein by reference.

[0002] Conventionally, a drawing apparatus (also called a direct drawing apparatus or a direct drawing exposure apparatus) that draws a pattern by irradiating a substrate with a convergent light beam has been used. For example, Japanese Patent Application Laid-Open No. 2020-67501 discloses a method for controlling the convergence position of a light beam to follow the substrate surface when drawing on a substrate having protruding regions and receding regions that are recessed from the protruding regions arranged on the surface.

[0003] In recent years, there has been a demand for even higher-definition patterns to be drawn in lithography devices. To achieve higher-definition patterns, higher resolution is necessary, and reducing the beam width at the exposure surface (in the above case, the substrate surface) is effective. However, it is known that resolution and depth of focus have a trade-off relationship (see Equations 1 and 2 below). Increasing the NA and reducing the beam width to increase the resolution results in a reduced depth of focus. When drawing a pattern, it is necessary to keep the error (fluctuation range) in the distance between the objective lens and the exposure surface within the range of the depth of focus. However, if the range of the depth of focus is less than the control error of the focus mechanism that moves the objective lens, exposure defects are likely to occur. Therefore, a new method capable of reducing the beam width even with a low NA is needed.

[0004] The present invention is directed to a drawing apparatus, and aims to realize drawing of a high-definition pattern by reducing the beam width.

[0005] Aspect 1 of the present invention is an imaging device comprising: a light source unit; an optical system that directs light from the light source unit onto a surface of an object along an optical axis; a spatial light modulator that is arranged in a first position within the optical system that is conjugate to the surface of the object and has a plurality of light modulation elements onto which the light from the light source unit is irradiated; a phase shift mask that is arranged in a second position within the optical system that is conjugate to the surface of the object and is a member that generates a phase difference between light that enters a central portion in a predetermined direction perpendicular to the optical axis and light that enters both outside of the central portion in a light irradiation area corresponding to each light modulation element, and that limits the width of the peak corresponding to the central portion in the intensity distribution in the predetermined direction of the light beam modulated by each light modulation element and irradiated onto the surface; and a moving mechanism that moves the irradiation position of the light beam of the plurality of light modulation elements on the surface of the object relative to the surface.

[0006] According to the present invention, it is possible to realize highly precise pattern writing by reducing the beam width.

[0007] A second aspect of the present invention is a drawing device according to the first aspect, further comprising a light-shielding mask that is arranged at a third position within the optical system that is conjugate to the surface of the object, and that has a light-shielding portion that blocks light incident on each outer edge portion in the specified direction in the light irradiation area corresponding to each light modulation element, and that reduces side lobes in the intensity distribution of the light beam.

[0008] A third aspect of the present invention is the drawing apparatus of the second aspect, wherein the light-shielding mask is disposed between the phase shift mask and the object in the optical system.

[0009] A fourth aspect of the present invention is the drawing device of the second aspect (which may be either second or third aspect), wherein the light-shielding mask is a light-transmitting member having the light-shielding portion provided at each of the outer edge portions in the predetermined direction, and the light-transmitting member further has a semi-transmitting portion having a higher transmittance than the light-shielding portion between the center between the outer edge portions and each of the outer edge portions.

[0010] Aspect 5 of the present invention is a drawing device of aspect 1, wherein the phase shift mask has a shading portion that reduces side lobes in the intensity distribution of the light beam by shading light incident on each outer edge portion in the specified direction in the light irradiation area corresponding to each light modulation element.

[0011] A sixth aspect of the present invention is a drawing device according to any one of the first to fifth aspects, further comprising a phase shift mask moving mechanism that moves the phase shift mask in a direction along the optical axis and / or in a direction perpendicular to the optical axis.

[0012] A seventh aspect of the present invention is the drawing device of any one of the second to fourth aspects, further comprising a light-shielding mask moving mechanism that moves the light-shielding mask in a direction along the optical axis and / or in a direction perpendicular to the optical axis.

[0013] The above and other objects, features, aspects and advantages will become more apparent from the following detailed description of the invention which proceeds with reference to the accompanying drawings.

[0014] FIG. 1 is a front view showing a drawing device; FIG. 2 is an enlarged view showing a spatial light modulator; FIG. 3 is a view showing the configuration of a part of a light irradiation unit; FIG. 4 is a view showing the optical path of a low NA objective lens; FIG. 5 is a view showing the optical path of a high NA objective lens; FIG. 6 is a view showing an example of a phase shift mask; FIG. 7 is a view showing the intensity distribution of a light beam on an exposure surface; FIG. 8 is a view showing the intensity distribution of a light beam on an exposure surface; FIG. 9 is a view showing the configuration of a light irradiation unit; FIG. 10 is a view showing a phase shift mask; FIG. 11 is a view showing a light-shielding mask; FIG. 12 is a view showing the intensity distribution of a light beam on an exposure surface; FIG. 13 is a view showing another example of a phase shift mask; FIG. 14 is a view showing another example of a light-shielding mask; FIG. 15 is a view showing another example of a light irradiation unit.

[0015] FIG. 1 is a front view showing a drawing device 1 according to an embodiment of the present invention. In FIG. 1, three mutually orthogonal directions are indicated by arrows as the X direction, the Y direction, and the Z direction (the same applies to FIG. 3 described later). In the example of FIG. 1, the X direction and the Y direction are horizontal directions, and the Z direction is vertical. In the following description, the Z direction will be referred to as the "up-down direction." The X direction, the Y direction, and the Z direction may be changed arbitrarily, and do not have to be horizontal or vertical.

[0016] The imaging device 1 is a device that irradiates light onto the surface of an object to image a pattern. In this embodiment, the object is a substrate 9 such as a semiconductor substrate, a printed circuit board, or a glass substrate, and a layer of a photosensitive material such as a resist is formed on an upper surface 91 of the substrate 9.

[0017] The imaging device 1 is divided into an interior of the body, which is inside the body frame 101, and an exterior of the body, which is outside the body frame 101. The interior of the body is divided into a processing area 102 and a delivery area 103. The processing area 102 contains the stage 2, the stage moving mechanism 20, the optical unit 40, and the alignment unit 6. The delivery area 103 contains the transport device 7. The imaging device 1 is provided with a control unit 10 and a cassette placement unit 104 outside the body. The control unit 10 includes, for example, a general computer in which a CPU, a ROM, a RAM, a storage device, etc. are interconnected via a bus line. The control unit 10 is electrically connected to the other components of the imaging device 1. The control unit 10 is responsible for overall control of the imaging device 1.

[0018] The cassette placement part 104 is provided at a position adjacent to the delivery area 103. A cassette C is placed on the cassette placement part 104. The transport device 7 arranged in the delivery area 103 has a transport robot or the like that transports substrates 9 into and out of the processing area 102. The transport device 7 removes unprocessed substrates 9 accommodated in the cassette C on the cassette placement part 104 and transports them onto the stage 2 of the processing area 102, and removes processed substrates 9 from the stage 2 and stores them in the cassette C. The cassette C is delivered to and from the cassette placement part 104 by an external transport device.

[0019] The stage 2 has a flat upper surface and holds the substrate 9 placed thereon by the transport device 7 in a horizontal position. The stage 2 is a holder that holds the substrate 9. In one example, the substrate 9 is held on the upper surface of the stage 2 by suction and adsorption. The stage movement mechanism 20 includes a support plate 22, a sub-scanning mechanism 23, a base plate 24, and a main scanning mechanism 25. The support plate 22 has a rotary motor and the like, and supports the stage 2 rotatably about an axis parallel to the vertical direction. The sub-scanning mechanism 23 has a linear motor, guide rails, and the like, and moves the support plate 22 in the X direction, which is the sub-scanning direction. The base plate 24 supports the sub-scanning mechanism 23. The main scanning mechanism 25 has a linear motor, guide rails, and the like, and moves the base plate 24 in the Y direction, which is the main scanning direction.

[0020] The alignment unit 6 includes an alignment camera 61. The alignment camera 61 has an area image sensor (two-dimensional image sensor) such as a CCD, and captures an image of an alignment mark formed on the upper surface 91 of the substrate 9. The captured image obtained by the alignment camera 61 is output to the control unit 10. The control unit 10 performs alignment processing to determine the relative positions of the optical unit 40 and the substrate 9 based on the captured image.

[0021] The optical unit 40 includes a plurality of light irradiation units 4. The plurality of light irradiation units 4 are arranged in the X direction. In this embodiment, the optical unit 40 includes two light irradiation units 4. The optical unit 40 may include three or more light irradiation units 4. The following description focuses on one light irradiation unit 4, but the other light irradiation units 4 have the same configuration.

[0022] Each light irradiation unit 4 includes a light source unit 41, an optical system 42, a spatial light modulator 46, a phase shift mask 51, and a light-shielding mask 52. The light source unit 41 includes a laser driver and a laser oscillator, and driving the laser driver causes the laser oscillator to emit laser light. The optical system 42 guides the laser light from the light source unit 41 along an optical axis J1 (see FIG. 3 , described below) to the upper surface 91 of the substrate 9. The optical system 42 includes an illumination optical system 43 and a projection optical system 44. The illumination optical system 43 includes multiple lenses and guides the laser light emitted from the light source unit 41 to the spatial light modulator 46. The phase shift mask 51 and the light-shielding mask 52 are disposed on the optical axis J1 of the illumination optical system 43. Details of the illumination optical system 43, the phase shift mask 51, and the light-shielding mask 52 will be described later.

[0023] FIG. 2 is an enlarged view of a portion of the spatial light modulator 46. The spatial light modulator 46 is a diffraction grating-type reflective modulator and includes a plurality of light modulation elements 461 arranged in a row. In FIG. 2, one light modulation element 461 is indicated by a thick rectangle. Each of the plurality of light modulation elements 461 includes a pair of ribbons 462 and 463. That is, each light modulation element 461 is a ribbon pair. Two or more ribbon pairs may form one light modulation element 461. Each light modulation element 461 can be switched between an OFF state in which first-order or higher diffracted light is emitted and an ON state in which zeroth-order diffracted light (zeroth-order light) is emitted by changing the height between the ribbons 462 and 463 (height in the direction perpendicular to the paper surface). The diffraction grating-type light modulator used in this embodiment is, for example, a GLV (Grating Light Valve) (registered trademark). As will be described later, the spatial light modulator 46 is not limited to a GLV.

[0024] FIG. 3 is a diagram showing a partial configuration of the light irradiation unit 4. The light irradiation unit 4 has a support column 401 extending in the vertical direction, and a portion protruding toward the (+Y) side is provided at the upper end of the support column 401. The spatial light modulator 46 is attached to the lower surface of the support column 401 via a movable stage 460. The reflective surfaces of the multiple light modulation elements 461 of the spatial light modulator 46 (i.e., the surfaces of the ribbons 462 and 463) face approximately downward. The support column 401 is provided with a through-hole 402 extending in the Y direction, and the optical axis J1 of the optical system 42 passes through the through-hole 402. Laser light from the light source unit 41 passes through the through-hole 402, is reflected by a mirror 436, and is irradiated onto the surface of the spatial light modulator 46, i.e., the reflective surfaces of the multiple light modulation elements 461. As described above, the plurality of light modulation elements 461 are arranged in one direction (the X direction in FIG. 3 ), and light (hereinafter also referred to as “linear light”) whose cross section perpendicular to the optical axis J1 is long in the X direction is irradiated onto the plurality of light modulation elements 461. Light reflected as zeroth-order diffracted light by the light modulation elements 461 in the ON state is incident on the projection optical system 44 disposed below the spatial light modulator 46. Light reflected as first-order or higher diffracted light by the light modulation elements 461 in the OFF state is not incident on the projection optical system 44.

[0025] The optical axis J1 in the projection optical system 44, i.e., the optical axis J1 between the spatial light modulator 46 and the upper surface 91 of the substrate 9, is approximately parallel to the vertical direction. The light beams (zeroth-order diffracted light) emitted from each light modulation element 461 and incident on the projection optical system 44 reach the focus lens 441 via multiple lenses. The focus lens 441 is the optical element (objective lens) arranged closest to the substrate 9 in the projection optical system 44. The light beams from each light modulation element 461 are converged by the focus lens 441 and directed to the upper surface 91 of the substrate 9 at a predetermined magnification.

[0026] A distance measurement unit 49 is attached to the lower part of the housing of the light irradiation unit 4. The distance measurement unit 49 includes an irradiation unit 491 and a light receiving unit 492. The irradiation unit 491 irradiates the upper surface 91 of the substrate 9 with detection light, which is laser light, at an angle. The light receiving unit 492 receives the detection light reflected by the upper surface 91. This allows the distance measurement unit 49 to measure the distance between the light irradiation unit 4 and the upper surface 91 of the substrate 9. In practice, the focus lens 441 can be moved up and down by a focus mechanism 442. By raising and lowering the focus lens 441 based on the measurement results by the distance measurement unit 49, the convergence position of the light beam emitted from the focus lens 441 is approximately positioned on the upper surface 91 of the substrate 9.

[0027] When drawing a pattern in the drawing apparatus 1 of FIG. 1 , the main scanning mechanism 25 continuously moves the substrate 9 in the main scanning direction. As a result, the irradiation positions of the light beams from the multiple light modulation elements 461 in each light irradiation unit 4 move relatively in the main scanning direction on the upper surface 91 of the substrate 9. Furthermore, the control unit 10 controls the spatial light modulators 46 of the light irradiation units 4 in synchronization with the movement of the irradiation positions on the upper surface 91. As a result, a pattern is drawn by each light irradiation unit 4 in a strip-shaped region extending in the main scanning direction on the upper surface 91. Next, the sub-scanning mechanism 23 moves the substrate 9 a predetermined distance in the sub-scanning direction. Thereafter, the spatial light modulators 46 of the light irradiation units 4 are controlled while the substrate 9 moves continuously in the main scanning direction. In this way, the continuous movement of the substrate 9 in the main scanning direction and the intermittent movement in the sub-scanning direction are repeated, thereby drawing a pattern on approximately the entire upper surface 91.

[0028] Here, the relationship between the resolution and depth of focus in the imaging device 1 and the numerical aperture (hereinafter simply referred to as "NA") of the objective lens will be explained using a simple model. Fig. 4 is a diagram showing the optical path when the NA of the objective lens 80 is relatively low, and Fig. 5 is a diagram showing the optical path when the NA of the objective lens 80 is relatively high. In Figs. 4 and 5, the in-focus position and both ends of the depth of focus are indicated by dashed lines perpendicular to the optical axis J2, and the cross section of the light beam at each position is shown to the left of the dashed lines. In the above model, the resolution R is calculated using Equation 1, and the depth of focus DOF ​​is calculated using Equation 2.

[0029] (Math. 1) R=k １ λ / NA

[0030] (Equation 2) DOF=±λ / 2NA ２

[0031] In Equations 1 and 2, λ is the wavelength of the light beam, and k １ is a constant. NA is expressed as n·sin θ, where n is the refractive index of the medium between the objective lens 80 and the exposure surface, and θ is the maximum angle of the light beam emitted from the objective lens 80 with respect to the optical axis J2.

[0032] To realize highly precise pattern writing, it is necessary to increase the resolution, but as is clear from Equations 1 and 2, increasing the NA to increase the resolution (i.e., reducing the beam width) results in a decrease in the depth of focus. When writing a pattern, the error (fluctuation range) in the distance between the objective lens 80 and the exposure surface is limited within the range of the depth of focus (λ / NA ２ However, if the range of the depth of focus is less than the control error of the mechanism that moves the objective lens 80 (the focus mechanism 442 in the example of FIG. 3), poor exposure is likely to occur. Therefore, even if the NA is low, it is necessary to reduce the beam width.

[0033] On the other hand, in the drawing apparatus 1, a pattern is drawn while the stage 2 is continuously moved in the main scanning direction. Therefore, the drag of the light beam accumulates the energy distribution on the exposure surface, and unlike the sub-scanning direction, the minimum line width of the pattern in the main scanning direction becomes wider than the beam width. To reduce the minimum line width of the pattern in the main scanning direction, it is necessary to reduce the beam width in the main scanning direction. Therefore, the drawing apparatus 1 employs a method of using a phase shift mask 51 to reduce the beam width in the main scanning direction even with a low NA (i.e., without increasing the NA).

[0034] Next, a phase shift mask will be described. FIG. 6 is a diagram showing an example of a phase shift mask 81. The phase shift mask 81 has a phase shift film 811 formed on a portion of the surface of a plate-shaped light-transmitting member 819. In FIG. 6, the area of ​​the phase shift film 811 is cross-hatched (similarly to FIG. 10 described later). The light-transmitting member 819 is made of, for example, glass. The phase shift film 811 is made of, for example, a silicon-containing compound. In the example of FIG. 6, phase shift films 811 are provided at both ends in the left-right direction, and the area between the two phase shift films 811 is an uncoated area 812. A phase difference of 180 degrees occurs between light passing through the uncoated area 812 where the phase shift film 811 is not present and light passing through the area where the phase shift film 811 is present.

[0035] Here, optical simulations will be described for a model of an optical system having an objective lens 80 (the model of FIG. 4 ) without and with a phase shift mask 81. When the phase shift mask 81 is used, the phase shift mask 81 is positioned conjugate to the exposure surface within the optical system. The phase shift mask 81 is held perpendicular to the optical axis J2, which is located at the center of the non-coated region 812. The width of the non-coated region 812 in the phase shift mask 81 (the width in the horizontal direction in FIG. 6 ) is 20 μm, and the width of each phase shift film 811 region is also 20 μm. The transmittance of the phase shift film 811 region and the non-coated region 812 is 100%. The magnification of the objective lens 80 is 1 / 40x, and the NA is 0.45.

[0036] 7 and 8 are diagrams showing the results of the simulation, illustrating the intensity distribution of the light beam at the exposure surface (here, the focal position). In Fig. 7 and Fig. 8, the vertical axis represents relative intensity (relative intensity with the maximum intensity of the central peak, described below, set to 1), and the horizontal axis represents the position in the width direction, which corresponds to the left-right direction in Fig. 6. On the horizontal axis, the position of the optical axis J2 in the width direction is the origin (0).

[0037] When the phase shift mask 81 is not used, the intensity distribution of the light beam on the exposure surface is a Gaussian distribution as shown in FIG. ２The beam width at the position where the beam width is 0.76 μm (shown by arrow A1 in FIG. 7). Hereinafter, when referring to the intensity distribution of the light beam, the maximum intensity (when there are multiple peaks, the maximum intensity of the central peak) is used. ２ The beam width at the position where

[0038] In contrast, when a phase shift mask 81 is used, as shown in FIG. 8 , the intensity distribution of the light beam on the exposure surface has a beam width (indicated by arrow A2 in FIG. 8 ) of 0.46 μm for the central peak P1 on the optical axis J2. Thus, by using the phase shift mask 81, it is possible to limit the width of the central peak P1 in the intensity distribution (i.e., to reduce the beam width). Meanwhile, the intensity distribution of FIG. 8 generates a side lobe P2. In the example of FIG. 8 , the maximum intensity of the side lobe P2 is 55% of the maximum intensity of the central peak P1. Since the side lobe P2 may affect the shape of the pattern to be written (causing exposure defects), it is preferable to reduce it. Therefore, the writing apparatus 1 further includes a light-shielding mask 52 to reduce the side lobe P2.

[0039] Fig. 9 is a diagram showing the configuration of the light irradiation unit 4. As described above, the light irradiation unit 4 includes a light source unit 41, an optical system 42, a spatial light modulator 46, a phase shift mask 51, and a light-shielding mask 52. As described with reference to Fig. 3, in the actual optical system 42, the optical axis is bent at the surfaces of the mirror 436 and the spatial light modulator 46, but in Fig. 9, for convenience of illustration, the optical axis J1 is shown as being linear.

[0040] 9 , a focus lens 431, a phase shift mask 51, a relay lens 432, a light-shielding mask 52, a relay lens 433, a spatial light modulator 46, and a projection optical system 44 are arranged in this order from the light source unit 41 toward the upper surface 91 of the substrate 9, which is the exposure surface. The focus lens 431 and the relay lenses 432 and 433 are included in the illumination optical system 43. The relay lenses 432 and 433 cause the reflecting surfaces of the phase shift mask 51, the light-shielding mask 52, and the spatial light modulator 46 to have conjugate positional relationships with each other (i.e., they are in an imaging relationship with each other).

[0041] The focus lens 431 can be moved along the optical axis J1 by a focus mechanism (not shown). As a result, linear light incident on the illumination optical system 43 from the light source unit 41 is focused on the reflecting surface of the spatial light modulator 46. An irradiation area is formed on the reflecting surface, extending in the array direction of the plurality of light modulation elements 461 (hereinafter simply referred to as the "arrangement direction") and having a narrow width in the direction perpendicular to the array direction. The upper surface 91 of the substrate 9 is conjugate with the reflecting surface of the spatial light modulator 46. Assuming that all the light modulation elements 461 are in the ON state, an irradiation area is also formed on the upper surface 91 of the substrate 9, extending in a direction corresponding to the array direction (hereinafter simply referred to as the "arrangement direction"; the same applies to other positions conjugate to the reflecting surface of the spatial light modulator 46). The irradiation area extends in a direction corresponding to the array direction (hereinafter simply referred to as the "arrangement direction"; the same applies to other positions conjugate to the reflecting surface of the spatial light modulator 46). On the upper surface 91, the arrangement direction is the direction along the sub-scanning direction (X direction), and the direction perpendicular to the arrangement direction is the direction along the main scanning direction (Y direction).

[0042] As described above, in the light irradiation unit 4, the spatial light modulator 46 is disposed at a first position conjugate to the upper surface 91 of the substrate 9 within the optical system 42, and the phase shift mask 51 is disposed at a second position conjugate to the upper surface 91 of the substrate 9 and different from the first position. Also, the light-shielding mask 52 is disposed at a third position conjugate to the upper surface 91 of the substrate 9 and different from the first and second positions. In the example of Fig. 9, the phase shift mask 51, the light-shielding mask 52, and the spatial light modulator 46 are disposed in this order from the light source unit 41 toward the upper surface 91.

[0043] The light irradiation unit 4 further includes a phase shift mask moving mechanism 56 and a light-shielding mask moving mechanism 57. The phase shift mask moving mechanism 56 has, for example, a motor and guide rails, and is capable of moving the phase shift mask 51 in a direction along the optical axis J1 and in two directions perpendicular to the optical axis J1 and orthogonal to each other. In the example of FIG. 1 , the direction along the optical axis J1 is the Y direction, and the two directions perpendicular to the optical axis J1 and orthogonal to each other are the X direction and the Z direction (the same applies to the light-shielding mask moving mechanism 57). The light-shielding mask moving mechanism 57 has, for example, a motor and guide rails, and is capable of moving the light-shielding mask 52 in a direction along the optical axis J1 and in two directions perpendicular to the optical axis J1 and orthogonal to each other.

[0044] If the optical axis of the light source unit 41 is misaligned due to aging, temperature, or the like, the position of the focus lens 431 is adjusted by a movement mechanism (not shown), and the position of the spatial light modulator 46 is also adjusted by the movable stage 460. Furthermore, the position of the phase shift mask 51 is finely adjusted by the phase shift mask movement mechanism 56, and the position of the light-shielding mask 52 is finely adjusted by the light-shielding mask movement mechanism 57. This makes it possible to maintain a constant light beam irradiated onto the upper surface 91 of the substrate 9. Depending on the design of the drawing apparatus 1, the phase shift mask movement mechanism 56 may be capable of moving the phase shift mask 51 only in a direction along the optical axis J1 or a direction perpendicular to the optical axis J1. Furthermore, the light-shielding mask movement mechanism 57 may be capable of moving the light-shielding mask 52 only in a direction along the optical axis J1 or a direction perpendicular to the optical axis J1.

[0045] FIG. 10 is a diagram showing a phase shift mask 51. As described with reference to FIG. 6, the phase shift mask 51 is plate-shaped and disposed perpendicular to the optical axis J1. As described above, the light irradiation unit 4 irradiates the reflective surface of the spatial light modulator 46 with linear light extending in the array direction, and therefore the phase shift mask 51 also has a shape extending in the array direction (the horizontal direction in FIG. 10 ) in accordance with the linear light. The phase shift mask 51 has a phase shift film 511 formed on a portion of the surface of a light-transmitting member 519. In the example of FIG. 10, the phase shift films 511 are provided at both ends in the vertical direction in the figure, and the region between the two phase shift films 511 is an uncovered region 512. In the phase shift mask 51, a phase difference of 180 degrees occurs between light passing through the uncovered region 512 where the phase shift film 511 is not present and light passing through the region where the phase shift film 511 is present.

[0046] On the surface of the phase shift mask 51, if the direction perpendicular to the optical axis J1 and the arrangement direction is referred to as the "direction of interest," then in the example of FIG. 10 , the vertical direction in the figure is the direction of interest. In the phase shift mask 51, two phase shift films 511 are arranged on both sides of the non-coated region 512 with respect to the direction of interest, and the optical axis J1 is arranged at the center of the non-coated region 512. The irradiation area of ​​the phase shift mask 51 with linear light from the light source unit 41 extends in the arrangement direction and overlaps the two phase shift films 511 and the non-coated region 512. Typically, the intensity distribution of the linear light in the direction of interest is a Gaussian distribution. In the irradiation area of ​​the phase shift mask 51 with linear light, light beams passing through multiple portions aligned in the arrangement direction are incident on the multiple light modulation elements 461 of the spatial light modulator 46. In other words, each of the multiple portions is an irradiation area of ​​light corresponding to one of the light modulation elements 461.

[0047] Thus, in the phase shift mask 51, in the light irradiation region corresponding to each light modulation element 461, an uncoated region 512 is provided in the center in the direction of interest, and regions of the phase shift film 511 are provided on both sides of the center. A phase difference occurs between the light incident on the center and the light incident on both sides of the center. As a result, as described with reference to FIG. 8 , in the linear light imaged on the reflecting surface of the spatial light modulator 46, the width of the peak corresponding to the center (i.e., the width of the peak formed mainly by the light beam passing through the center) is limited in the intensity distribution in the direction corresponding to the direction of interest. As a result, the width of the peak corresponding to the center is also limited in the intensity distribution in the direction corresponding to the direction of interest for the light beam modulated by each light modulation element 461 and irradiated onto the upper surface 91 of the substrate 9, thereby realizing a narrow beam width. Hereinafter, the direction corresponding to the direction of interest at each position conjugate to the position of the phase shift mask 51 will be simply referred to as the "direction of interest." In the drawing apparatus 1 of FIG. 1, the direction of interest on the upper surface 91 of the substrate 9 is the main scanning direction.

[0048] The phase difference caused by phase shift mask 51 is not limited to 180 degrees, and may be, for example, 165 to 195 degrees or 170 to 190 degrees, as long as the width of the peak corresponding to the central portion is appropriately limited. Furthermore, when a phase difference occurs among light-shielding portion 521, semi-transmitting portion 522, and transparent portion 523 (described later) in light-shielding mask 52, the phase difference occurring between the region of phase shift film 511 and uncovered region 512 may be determined taking these phase differences into consideration.

[0049] FIG. 11 is a diagram showing a light-shielding mask 52. Like the phase-shift mask 51, the light-shielding mask 52 is plate-shaped and arranged perpendicular to the optical axis J1. It also has a shape extending in the arrangement direction (the left-right direction in FIG. 11 ) to match the linear light. The light-shielding mask 52 includes two light-shielding portions 521, two semi-transparent portions 522, and a transparent portion 523. In one example of the light-shielding mask 52, a light-shielding film is formed on part of the surface of a plate-shaped light-transmitting member 529, and a semi-transparent film is formed on the other part. In the light-transmitting member 529, the portion of the light-shielding film is the light-shielding portion 521, the portion of the semi-transparent film is the semi-transparent portion 522, and the portion without either film is the transparent portion 523. The light-shielding film and the semi-transparent film are, for example, thin metal films such as chromium (Cr).

[0050] 11, a light-shielding portion 521 is provided on each outer edge in the vertical direction in the figure, and a semi-transparent portion 522 is provided near the inside of each outer edge. The area (center) between the two semi-transparent portions 522 is a transparent portion 523. The transmittance of the light from the light source 41 through the light-shielding portion 521 is approximately 0%, and the transmittance through the transparent portion 523 is, for example, 80 to 100%. The transmittance through the semi-transparent portion 522 is greater than the transmittance through the light-shielding portion 521 and less than the transmittance through the transparent portion 523. The transmittance through the semi-transparent portion 522 is, for example, 25 to 75%. The light-shielding mask 52 can also be considered as a partially active density filter (ND filter).

[0051] In the example of FIG. 11 , the vertical direction in the drawing is the direction of interest. In the light-shielding mask 52, two semi-transparent portions 522 are arranged on both sides of a transparent portion 523 with respect to the direction of interest, and two light-shielding portions 521 are arranged outside the two semi-transparent portions 522. The optical axis J1 is located at the center of the transparent portion 523. The irradiation area of ​​the light-shielding mask 52 with linear light from the light source unit 41 extends in the arrangement direction and overlaps with the two light-shielding portions 521, the two semi-transparent portions 522, and the transparent portion 523. In the irradiation area of ​​the linear light in the light-shielding mask 52, light beams that pass through multiple portions aligned in the arrangement direction are incident on the multiple light modulation elements 461 of the spatial light modulator 46. In other words, each of the multiple portions is an irradiation area of ​​light corresponding to one of the light modulation elements 461.

[0052] In this way, in the light-shielding mask 52, a light-shielding portion 521 is provided at each outer edge portion in the direction of interest in the light irradiation region corresponding to each light modulation element 461. Then, by blocking light incident on the outer edge portion with the light-shielding portion 521, side lobes in the intensity distribution of the light beam in the direction of interest are selectively reduced (dimmed) on the reflecting surface of the spatial light modulator 46 and on the upper surface 91 of the substrate 9. Furthermore, by providing a semi-transparent portion 522 having a higher transmittance than the light-shielding portion 521 between each outer edge and the center portion between the two outer edges, the side lobes are further reduced, as will be described later.

[0053] Here, optical simulations are described for the light irradiation unit 4 shown in FIG. 9 when the light-shielding mask 52 is omitted, when the light-shielding mask 52 is used without the semi-transparent portions 522, and when the light-shielding mask 52 includes the semi-transparent portions 522. In these simulations, the width of the uncovered region 512 in the phase shift mask 51 (the vertical width in FIG. 10) is 16 μm, and the width of each phase shift film 511 region is also 16 μm. The transmittance of the phase shift film 511 region and the uncovered region 512 is 100%. In the light-shielding mask 52, the width of the transparent portion 523 (the vertical width in FIG. 11) is 12.9 μm, the width of the semi-transparent portion 522 is 2.1 μm, and the width of the light-shielding portion 521 is 6.4 μm. The transmittance of the transparent portion 523 is 100%, the transmittance of the semi-transparent portion 522 is 50%, and the transmittance of the light-shielding portion 521 is 0%. The magnification of the projection optical system 44 is 1 / 40, and the NA is 0.45. This simulation uses software different from the simulation software used to obtain the results in Figures 7 and 8. Note that the sizes of the regions in the phase shift mask 51 and the light-shielding mask 52 are merely examples and may be changed as appropriate.

[0054] 12 and 13 are diagrams showing the results of a simulation, illustrating the intensity distribution of the light beam in the direction of interest on the exposure surface (upper surface 91 of substrate 9). In FIGS. 12 and 13, the vertical axis represents relative intensity (relative intensity with the maximum intensity of the central peak, described below, set to 1), and the horizontal axis represents the position in the direction of interest. On the horizontal axis, the position of the optical axis J1 in the direction of interest is the origin (0). The dashed line L1 in FIG. 12 represents the intensity distribution when the light-shielding mask 52 is omitted, and the solid line L2 represents the intensity distribution when a light-shielding mask 52 without the semi-transparent portions 522 is used. The dashed line L2 in FIG. 13 represents the intensity distribution when a light-shielding mask 52 without the semi-transparent portions 522 is used (the same as the solid line L2 in FIG. 12), and the solid line L3 represents the intensity distribution when a light-shielding mask 52 including the semi-transparent portions 522 is used.

[0055] When the light-shielding mask 52 is omitted, as shown by the dashed line L1 in FIG. 12 , a central peak P11 occurs in the range of (-0.2) to (+0.2) μm in the direction of interest, and peaks P12 also occur on both sides of this range. Here, a beam width of 0.4 μm or less is targeted, and in the following description, the peaks P12 outside the range of (-0.2) to (+0.2) μm in the direction of interest are referred to as "side lobes P12." When the light-shielding mask 52 is omitted, the maximum value of the relative intensity of the side lobes P12 is approximately 0.5. It is believed that the vibration waveforms occurring at the base of the central peak P11 and in each of the side lobes P12 are due to diffraction at the boundary between the phase shift film 511 region and the uncovered region 512 of the phase shift mask 51.

[0056] When a light-shielding mask 52 without semi-transparent portions 522 is used, the shape of the central peak P21 is substantially the same as the central peak P11 when the light-shielding mask 52 is omitted, as shown by the solid line L2 in Fig. 12. On the other hand, the size of the side lobe P22 is significantly smaller than that of the side lobe P12 when the light-shielding mask 52 is omitted, as shown by the dashed line L1, and the maximum value of the relative intensity of the side lobe P22 is approximately 0.16. In this way, the side lobes are reduced by using a light-shielding mask 52 having light-shielding portions 521.

[0057] Furthermore, when a light-shielding mask 52 including a semi-transparent portion 522 is used, the size of the side lobe P32 is smaller than that of the dashed line L2 (the side lobe P22 when a light-shielding mask 52 omitting the semi-transparent portion 522 is used), as shown by the solid line L3 in FIG. 13 , and the maximum value of the relative intensity of the side lobe P32 is approximately 0.09. In this way, the provision of the semi-transparent portion 522 in the light-shielding mask 52 further reduces the side lobes. Note that, in the solid line L3, the protruding portions present near the positions (-0.2) μm and (+0.2) μm in the central peak P31 are also smaller than those in the dashed line L2.

[0058] Although the reason why the presence of the semi-transparent portion 522 reduces the side lobes is not entirely clear, it is thought that when a light-shielding mask 52 is used that does not include the semi-transparent portion 522, strong diffracted light is generated and the side lobes become large due to the abrupt change in transmittance from 0% to 100% at the boundary between the light-shielding portion 521 and the transparent portion 523. In the light-shielding mask 52 that includes the semi-transparent portion 522, the change in transmittance at the boundary becomes gradual, which presumably suppresses the diffracted light and reduces the side lobes.

[0059] As described above, the imaging device 1 includes the light source unit 41, the optical system 42 that guides light from the light source unit 41 along the optical axis J1 onto the surface of the object (the upper surface 91 of the substrate 9 in the above example), the spatial light modulator 46 that is disposed at a first position conjugate to the surface of the object within the optical system 42 and has a plurality of light modulation elements 461 that are irradiated with light from the light source unit 41, the phase shift mask 51 that is disposed at a second position conjugate to the surface of the object within the optical system 42, and the stage movement mechanism 20 that moves the irradiation positions of the light beams of the plurality of light modulation elements 461 on the surface of the object relative to the surface. The phase shift mask 51 is a member that generates a phase difference between light incident on a central portion in a predetermined direction perpendicular to the optical axis J1 and light incident on both outer sides of the central portion in a light irradiation area corresponding to each light modulation element 461, and limits the width of a peak corresponding to the central portion in the intensity distribution in the predetermined direction of the light beam modulated by each light modulation element 461 and irradiated onto the surface of the object. This makes it possible to reduce the beam width of the light beam in the predetermined direction, thereby improving the resolution while using a low NA projection optical system 44. As a result, a certain degree of depth of focus can be ensured, and high-resolution pattern drawing can be achieved without being restricted by the accuracy limit of the focus mechanism that moves the objective lens.

[0060] Preferably, the imaging device 1 further includes a phase shift mask moving mechanism 56 that moves the phase shift mask 51 in a direction along the optical axis J1 and / or a direction perpendicular to the optical axis J1. This allows the position of the phase shift mask 51 to be adjusted to irradiate a stable light beam even when the state of the light source unit 41 fluctuates (for example, when a change or fluctuation occurs in the quality of the light beam emitted from the light source unit 41).

[0061] Preferably, the imaging device 1 further includes a light-shielding mask 52 arranged at a third position conjugate with the surface of the object within the optical system 42. The light-shielding mask 52 has light-shielding portions 521 that block light incident on each outer edge portion in the predetermined direction in the light irradiation area corresponding to each light modulation element 461. This makes it possible to appropriately reduce side lobes in the intensity distribution of the light beam irradiated onto the surface of the object.

[0062] Preferably, the light-shielding mask 52 is a light-transmitting member 529 having light-shielding portions 521 provided at each outer edge portion in the predetermined direction, and the light-transmitting member 529 further has semi-transmitting portions 522 having higher transmittance than the light-shielding portions 521 provided between the center portion between the outer edges and each outer edge portion. This makes it possible to further reduce side lobes. Depending on the design of the light-shielding mask 52, the light-shielding mask 52 may be formed by bonding together a block-shaped light-transmitting member that constitutes the light-transmitting portion 523, a block-shaped light-shielding member that constitutes the light-shielding portion 521, and a block-shaped semi-transmitting member that constitutes the semi-transmitting portion 522 (the same applies to the phase-shift mask 51).

[0063] Preferably, the imaging device 1 further includes a light-shielding mask moving mechanism 57 that moves the light-shielding mask 52 in a direction along the optical axis J1 and / or in a direction perpendicular to the optical axis J1. This allows the position of the light-shielding mask 52 to be adjusted to irradiate a stable light beam even if the state of the light source unit 41 fluctuates.

[0064] In the example of FIG. 9 , the phase shift mask 51, the light-shielding mask 52, and the spatial light modulator 46 are arranged in this order within the optical system 42, from the light source unit 41 toward the upper surface 91 of the substrate 9. However, the order of the phase shift mask 51, the light-shielding mask 52, and the spatial light modulator 46 is not particularly limited as long as they are arranged at positions conjugate to the upper surface 91 of the substrate 9. For example, the spatial light modulator 46 may be arranged closest to the light source unit 41. In this case, the phase shift mask 51 forms an illumination area illuminated by light passing through each light modulation element 461, and in this illumination area, a phase difference occurs between light incident on a central portion in the direction of interest and light incident on both outer sides of the central portion. Furthermore, the light-shielding mask 52 forms an illumination area illuminated by light passing through each light modulation element 461, and in this illumination area, light incident on each outer edge portion in the direction of interest is blocked by the light-shielding portions 521. In this way, in each of the phase shift mask 51 and the light-shielding mask 52, the light irradiation area corresponding to each light modulation element 461 may be either an area through which the (intended) light beam incident on each light modulation element 461 passes, or an area through which the light beam that has passed through each light modulation element 461 passes.

[0065] Furthermore, the light-shielding mask 52 may be disposed closer to the light source unit 41 than the phase shift mask 51. In this case, it is also possible to reduce side lobes in the intensity distribution of the light beam. On the other hand, the light-shielding mask 52 offers a high degree of design freedom, for example, by changing the transmittance of the semi-transparent portions 522. From the viewpoint of reducing side lobes in the intensity distribution of the light beam by the light-shielding mask 52, it is preferable to design the light-shielding mask 52 in accordance with the intensity distribution in the direction of interest of light that has passed through the phase shift mask 51. Therefore, by disposing the light-shielding mask 52 between the phase shift mask 51 and the substrate 9 in the optical system 42, the phase shift mask 51 and the light-shielding mask 52 can be easily designed.

[0066] FIG. 14 is a cross-sectional view showing another example of a phase shift mask. The vertical direction in FIG. 14 is the observation direction, and the direction perpendicular to the paper surface is the arrangement direction. In the phase shift mask 51a of FIG. 14, a plate-shaped light-transmitting member 519 extends in the observation direction and the arrangement direction. A phase shift film 511 similar to that of FIG. 10 is provided on one main surface of the light-transmitting member 519, and a light-shielding portion 521 (light-shielding film) and a semi-light-transmitting portion 522 (semi-light-transmitting film) similar to those of FIG. 11 are provided on the other main surface. The phase shift mask 51a essentially integrates a phase shift mask and a light-shielding mask. The phase shift mask 51a is positioned conjugate to the upper surface 91 of the substrate 9 within the optical system 42. In the light irradiation unit 4 having the phase shift mask 51a, the light-shielding mask 52 is omitted.

[0067] In the phase shift mask 51a, in the light irradiation region corresponding to each light modulation element 461, the center in the direction of interest overlaps with the uncoated region 512, and both outer edges of the center overlap with the phase shift film 511. This allows a phase difference to be generated between the light incident on the center and the light incident on both outer edges of the center, thereby reducing the beam width in the direction of interest of the light beam irradiated onto the upper surface 91 of the substrate 9. Furthermore, in the light irradiation region, light incident on each outer edge in the direction of interest is blocked by the light-shielding portions 521. This allows appropriate reduction of side lobes in the intensity distribution of the light beam in the direction of interest. Furthermore, by providing the semi-transparent portions 522, the side lobes can be further reduced. In the light irradiation unit 4 having the phase shift mask 51a, the light-shielding mask 52 is omitted, thereby shortening the length from the light source unit 41 to the substrate 9 and enabling the light irradiation unit 4 to be miniaturized.

[0068] FIG. 15 is a diagram showing another example of a light-shielding mask. The vertical direction in FIG. 15 is the focus direction, and the horizontal direction is the array direction. The light-shielding mask 52a in FIG. 15 includes a pair of metal plates 526, a pair of support rails 527, and a gap adjustment mechanism 528. Each metal plate 526 is a plate-shaped member extending in the focus direction and the array direction. The pair of metal plates 526 are spaced apart in the focus direction. The pair of support rails 527 extend in the focus direction and are spaced apart in the array direction. Both ends of the metal plate 526 in the array direction are supported by the pair of support rails 527 so as to be movable in the focus direction. The gap adjustment mechanism 528 has a motor, a ball screw, etc., and is capable of changing the width of the gap between the pair of metal plates 526.

[0069] 15, in the light irradiation region corresponding to each light modulation element 461, light incident on each outer edge in the direction of interest is blocked by the metal plate 526, which is a light-blocking portion. This makes it possible to appropriately reduce side lobes in the intensity distribution of the light beam in the direction of interest. Furthermore, even if the state of the light source unit 41 fluctuates, the side lobes can be appropriately reduced by adjusting the width of the gap between the pair of metal plates 526.

[0070] The drawing device 1 can be modified in various ways.

[0071] In the imaging device 1, a plurality of light-shielding masks 52 may be prepared, and the light-shielding masks 52 on the optical axis J1 may be switchable by a switching mechanism such as a revolver. For example, if the transmittance of the light-shielding mask 52 arranged on the optical axis J1 changes due to deterioration or the like, the switching mechanism may position a new light-shielding mask 52 on the optical axis J1, thereby making it possible to maintain a constant state of the light beam irradiated onto the upper surface 91 of the substrate 9. The plurality of light-shielding masks 52 may include light-shielding masks 52 having different sizes and transmittances of the light-shielding portion 521, the semi-transparent portion 522, and the transparent portion 523. In this case, for example, one light-shielding mask 52 may be selected depending on fluctuations in the laser light from the light source unit 41. Alternatively, one light-shielding mask 52 may be selected by performing a drawing test in advance.

[0072] The imaging device 1 may use a spatial light modulator in which a plurality of light modulation elements 461 are arranged two-dimensionally. The spatial light modulator 46a in the example of FIG. 16 is a DMD (Digital Micromirror Device) in which a plurality of micromirrors, each of which is a light modulation element 461, are arranged two-dimensionally. In the DMD, the attitude (orientation) of the plurality of micromirrors is changeable. In the light irradiation unit 4 including the spatial light modulator 46a, a plurality of light beams are irradiated onto the plurality of light modulation elements 461 by an illumination optical system (not shown). When all of the light modulation elements 461 are in the ON state, the light irradiated onto the plurality of light modulation elements 461 is incident on the plurality of element lenses 471 of the lens array 47 and is guided to the phase shift mask 51b.

[0073] In the phase shift mask 51b, multiple phase shift portions 510 are arranged two-dimensionally. In each phase shift portion 510, a phase shift film 511 is provided in an annular region surrounding a circular uncoated region 512. Light from the multiple lens elements 471 is incident on each of the multiple phase shift portions 510. In each phase shift portion 510, a light irradiation region corresponding to the light modulation element 461 is formed with its center approximately at the center of the circular uncoated region 512. In the light irradiation region, the central portion overlaps the uncoated region 512, and the outside of the central portion (the outside in all directions perpendicular to the optical axis J1) overlaps the phase shift film 511. This makes it possible to generate a phase difference between the light incident on the central portion and the light incident on the outside of the central portion. As a result, the beam width (i.e., beam diameter) in all directions of the light beam that passes through the phase shift portion 510 and is irradiated onto the upper surface 91 of the substrate 9 is reduced. 14 , the phase shift mask 51b may include a light-shielding portion 521 and a semi-transmitting portion 522. In this case, an annular semi-transmitting portion 522 is provided around a circular light-transmitting portion 523, and an annular light-shielding portion 521 is provided around the semi-transmitting portion 522. Of course, separate light-shielding masks may be used. The imaging device 1 may use a spatial light modulator other than a GLV or a DMD.

[0074] The light source unit 41 may emit light other than laser light. The configuration of the optical system 42 may be changed as appropriate.

[0075] In the imaging device 1, the moving mechanism that moves the irradiation position of the light beam on the upper surface 91 of the substrate 9 relative to the upper surface 91 may be a mechanism other than the stage moving mechanism 20. For example, a moving mechanism that moves the light irradiation unit 4 may be provided, and the moving mechanism may include a rotating mirror or the like that scans the irradiation position of the light beam.

[0076] The target object on which the pattern is drawn by the drawing apparatus 1 may be something other than the substrate 9 .

[0077] The configurations of the above-described embodiment and each modification may be combined as appropriate as long as they are not mutually contradictory.

[0078] While the invention has been particularly illustrated and described, it should be understood that the foregoing description is illustrative and not restrictive, and that numerous modifications and variations are possible without departing from the scope of the invention.

[0079] REFERENCE SIGNS LIST 1 Drawing device 9 Substrate 20 Stage moving mechanism 41 Light source unit 42 Optical system 46, 46a Spatial light modulator 51, 51a, 51b, 81 Phase shift mask 52, 52a Light-shielding mask 56 Phase shift mask moving mechanism 57 Light-shielding mask moving mechanism 91 Upper surface (of substrate) 461 Light modulation element 521 Light-shielding portion 522 Semi-transmitting portion 523 Light-transmitting portion 526 Metal plate 529 Light-transmitting member J1, J2 Optical axis P1, P11, P21, P31 Central peak P2, P12, P22, P32 Side lobes

Claims

1. A drawing device comprising: a light source unit; an optical system that directs light from the light source unit along an optical axis onto a surface of an object; a spatial light modulator that is located in a first position within the optical system that is conjugate to the surface of the object, and has a plurality of light modulation elements that are irradiated with the light from the light source unit; a phase shift mask that is located in a second position within the optical system that is conjugate to the surface of the object, and is a member that generates a phase difference between light that enters a center in a predetermined direction perpendicular to the optical axis and light that enters both outside of the center in a light irradiation area corresponding to each light modulation element, and that limits the width of a peak that corresponds to the center in the intensity distribution in the predetermined direction of the light beam that is modulated by each light modulation element and irradiated onto the surface; and a movement mechanism that moves the irradiation position of the light beam of the plurality of light modulation elements on the surface of the object relative to the surface.

2. A drawing device according to claim 1, further comprising a light-shielding mask that is arranged in a third position within the optical system that is conjugate with the surface of the object, has a light-shielding portion that blocks light incident on each outer edge portion in the specified direction in the light irradiation area corresponding to each light modulation element, and reduces side lobes in the intensity distribution of the light beam.

3. A drawing apparatus according to claim 2, wherein the light-shielding mask is disposed between the phase-shifting mask and the object within the optical system.

4. A drawing device according to claim 2, wherein the light-shielding mask is a light-transmitting member in which the light-shielding portion is provided on each of the outer edge portions in the predetermined direction, and the light-transmitting member is further provided with a semi-transmitting portion having a higher transmittance than the light-shielding portion between the center portion between both outer edge portions and each of the outer edge portions.

5. A drawing device according to claim 1, wherein the phase shift mask has a light-shielding portion that reduces side lobes in the intensity distribution of the light beam by blocking light incident on each outer edge portion in the specified direction in the light irradiation area corresponding to each light modulation element.

6. A drawing apparatus according to any one of claims 1 to 5, further comprising a phase shift mask moving mechanism that moves the phase shift mask in a direction along the optical axis and / or in a direction perpendicular to the optical axis.

7. A drawing device according to any one of claims 2 to 4, further comprising a light-shielding mask moving mechanism that moves the light-shielding mask in a direction along the optical axis and / or in a direction perpendicular to the optical axis.

Images