Vacuum treatment device and pressure control method

Abstract

This vacuum treatment device has a treatment container, a plurality of plate-shaped members, and a drive mechanism. In the treatment container, a support part for supporting a substrate on the upper surface of the support part is provided inside, an exhaust port connected to an exhaust mechanism is formed at a position lower than the upper surface on the circumference of the support part, and an exhaust flow path through which exhaust gas flows to the exhaust port is formed on the circumference of the support part. The plurality of plate-shaped members are provided on the upstream side of the exhaust port with respect to the exhaust flow of the exhaust flow path, and are configured such that the exhaust flow path can be opened and closed by the rotation of each plate-shaped member. The drive mechanism rotationally drives the plurality of plate-shaped members.

Description

Vacuum processing apparatus and pressure control method

[0001] The present disclosure relates to a vacuum processing apparatus and a pressure control method.

[0002] The following Patent Document 1 discloses a plasma processing apparatus comprising: a plasma processing chamber; a substrate support disposed within the plasma processing chamber; an annular baffle plate disposed to surround the substrate support and having a plurality of openings; a first annular plate disposed below the annular baffle plate; a second annular plate disposed below the first annular plate and having an annular overlapping portion that vertically overlaps a portion of the first annular plate; a pressure detector configured to detect pressure within the plasma processing chamber; and at least one actuator configured to vertically move at least one of the first annular plate and the second annular plate to change the distance between the first annular plate and the second annular plate based on the detected pressure.

[0003] Japanese Patent Application Laid-Open No. 2022-143376

[0004] The present disclosure provides techniques to increase the range of pressure control.

[0005] A vacuum processing apparatus according to one aspect of the present disclosure includes a processing vessel, a plurality of plate-like members, and a drive mechanism. The processing vessel has a support member therein that supports a substrate on its upper surface, an exhaust port connected to an exhaust mechanism formed around the support member at a position lower than the upper surface, and an exhaust flow path formed around the support member through which exhaust flows to the exhaust port. The plurality of plate-like members are disposed upstream of the exhaust port with respect to the flow of exhaust in the exhaust flow path, and are configured so that the exhaust flow path can be opened and closed by rotation of each member. The drive mechanism drives and rotates the plurality of plate-like members.

[0006] According to the present disclosure, the pressure control range can be expanded.

[0007] FIG. 1 is a diagram illustrating an example of the configuration of a capacitively coupled plasma processing apparatus. FIG. 2 is a diagram illustrating an example of a schematic configuration of a plasma processing chamber according to an embodiment. FIG. 3 is a diagram illustrating an example of the configuration of a flap according to an embodiment. FIG. 4 is a diagram illustrating a change in the attitude of a flap according to an embodiment. FIG. 5 is a diagram illustrating a change in the flow path resistance of an exhaust flow path according to an embodiment. FIG. 6 is a diagram illustrating an example of the configuration near a flap in a plasma processing chamber according to an embodiment. FIG. 7 is a diagram illustrating an example of the configuration of an overlapping portion of a flap according to an embodiment. FIG. 8 is a diagram illustrating an example of a processing sequence of a pressure control method according to an embodiment. FIG. 9A is a diagram illustrating an example of another configuration of a flap according to an embodiment. FIG. 9B is a diagram illustrating an example of another configuration of a flap according to an embodiment. FIG. 10A is a diagram illustrating an example of another configuration of a flap according to an embodiment. FIG. 10B is a diagram illustrating an example of another configuration of a flap according to an embodiment. FIG. 11A is a diagram illustrating an example of another configuration of a flap according to an embodiment. FIG. 11B is a diagram illustrating an example of another configuration of a flap according to an embodiment. FIG. 11C is a diagram illustrating an example of another configuration of a flap according to an embodiment. FIG. 12A is a diagram illustrating an example of another configuration of a flap according to an embodiment. FIG. 12B is a diagram illustrating an example of another configuration of a flap according to an embodiment. Fig. 12C is a diagram illustrating another example of the configuration of the flap according to the embodiment. Fig. 13 is a diagram illustrating a change in the attitude of the flap according to the embodiment. Fig. 14 is a diagram illustrating a change in the attitude of the flap according to the embodiment. Fig. 15 is a diagram illustrating a change in the flow path resistance of the exhaust flow path according to the embodiment. Fig. 16 is a diagram illustrating another example of the arrangement of the flap according to the embodiment.

[0008] Hereinafter, embodiments of the vacuum processing apparatus and pressure control method disclosed in the present application will be described in detail with reference to the drawings. Note that the vacuum processing apparatus and pressure control method disclosed are not limited to the embodiments.

[0009]

[0003] Vacuum processing apparatuses have been known in the art for performing substrate processing, such as plasma processing, on substrates while maintaining a reduced pressure inside the chamber. In these vacuum processing apparatuses, a support member for supporting the substrate is provided within a chamber, and the substrate processing is performed while the chamber is depressurized through an exhaust port provided near the bottom of the chamber. Some of these vacuum processing apparatuses have a configuration in which a first annular plate and a second annular plate are provided around the support member, and the pressure inside the chamber is controlled by changing the distance between the first and second annular plates.

[0010] However, in such a vacuum processing apparatus, even when the first annular plate and the second annular plate are at the maximum distance from each other, the resistance to the exhaust flow path is large and the pressure control range is narrow.

[0011] Therefore, there is a need for technology that can expand the range of pressure control.

[0012] [Embodiment] [Apparatus Configuration] An example of a vacuum processing apparatus according to the present disclosure will be described. In the embodiment described below, the vacuum processing apparatus according to the present disclosure is used as a plasma processing system in a system configuration, and plasma processing is performed as substrate processing.

[0013] An example of the configuration of a plasma processing system will be described below: Fig. 1 is a diagram for explaining an example of the configuration of a capacitively coupled plasma processing apparatus.

[0014] The plasma processing system includes a capacitively coupled plasma processing apparatus 1 and a controller 2. The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. The plasma processing chamber 10 is an example of a processing vessel of the present disclosure. The plasma processing apparatus 1 also includes a substrate support 11 and a gas inlet. The gas inlet is configured to introduce at least one process gas into the plasma processing chamber 10. The gas inlet includes a showerhead 13. The substrate support 11 is disposed within the plasma processing chamber 10. The showerhead 13 is disposed above the substrate support 11. In one embodiment, the showerhead 13 forms at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the showerhead 13, a sidewall 10a of the plasma processing chamber 10, and the substrate support 11. The plasma processing chamber 10 has at least one gas inlet for supplying at least one processing gas to the plasma processing space 10s and at least one gas outlet for exhausting gas from the plasma processing space 10s. The plasma processing chamber 10 is grounded. The showerhead 13 and the substrate support 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0015] The substrate support 11 includes a main body 111 and a ring assembly 112. The main body 111 is an example of a support in the present disclosure. A wafer is an example of a substrate W. The main body 111 is formed in a cylindrical shape with its axis in the vertical direction. The main body 111 supports the substrate W on its upper surface. For example, the main body 111 has, on its upper surface, a central region 111a for supporting the substrate W and an annular region 111b for supporting the ring assembly 112. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in a plan view. The substrate W is disposed on the central region 111a of the main body 111, and the ring assembly 112 is disposed on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111. Therefore, the central region 111 a is also referred to as a substrate support surface for supporting the substrate W, and the annular region 111 b is also referred to as a ring support surface for supporting the ring assembly 112 .

[0016] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 can function as a lower electrode. The electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic electrode 1111b disposed within the ceramic member 1111a. The ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111b. Note that the annular region 111b may also be provided by another member surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck 1111 and the annular insulating member. Furthermore, at least one RF / DC electrode coupled to an RF (Radio Frequency) power supply 31 and / or a DC (Direct Current) power supply 32 (described later) may be disposed within the ceramic member 1111a. In this case, the at least one RF / DC electrode functions as a lower electrode. When a bias RF signal and / or a DC signal (described later) is supplied to the at least one RF / DC electrode, the RF / DC electrode is also called a bias electrode. Note that the conductive member of the base 1110 and the at least one RF / DC electrode may function as multiple lower electrodes. Furthermore, the electrostatic electrode 1111b may function as a lower electrode. Therefore, the substrate support 11 includes at least one lower electrode.

[0017] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one cover ring. The edge rings are formed of a conductive or insulating material, and the cover rings are formed of an insulating material.

[0018] The substrate support 11 may also include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow passage 1110a, or a combination thereof. A heat transfer fluid such as brine or a gas flows through the flow passage 1110a. In one embodiment, the flow passage 1110a is formed in the base 1110, and one or more heaters are disposed in the ceramic member 1111a of the electrostatic chuck 1111. The substrate support 11 may also include a heat transfer gas supply configured to supply a heat transfer gas to a gap between the backside of the substrate W and the central region 111a.

[0019] The showerhead 13 is configured to introduce at least one process gas from the gas supply unit 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas inlets 13c. The process gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the multiple gas inlets 13c. The showerhead 13 also includes at least one upper electrode. In addition to the showerhead 13, the gas inlet may also include one or more side gas injectors (SGIs) attached to one or more openings formed in the sidewall 10a.

[0020] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from a corresponding gas source 21 to the showerhead 13 via a corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply unit 20 may include one or more flow modulation devices to modulate or pulse the flow rate of the at least one process gas.

[0021] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This generates a plasma from at least one process gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of a plasma generating unit configured to generate a plasma from one or more process gases in the plasma processing chamber 10. Furthermore, by supplying a bias RF signal to the at least one lower electrode, a bias potential is generated on the substrate W, thereby attracting ion components in the formed plasma to the substrate W.

[0022] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0023] The second RF generator 31b is coupled to at least one lower electrode via at least one impedance matching circuit and is configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generator 31b may be configured to generate multiple bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0024] The power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generator 32a and a second DC generator 32b. In one embodiment, the first DC generator 32a is connected to the at least one lower electrode and configured to generate a first DC signal. The generated first bias DC signal is applied to the at least one lower electrode. In one embodiment, the second DC generator 32b is connected to the at least one upper electrode and configured to generate a second DC signal. The generated second DC signal is applied to the at least one upper electrode.

[0025] In various embodiments, at least one of the first and second DC signals may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses may have a rectangular, trapezoidal, triangular, or combination thereof pulse waveform. In one embodiment, a waveform generator for generating the sequence of voltage pulses from the DC signal is connected between the first DC generator 32a and at least one lower electrode. Thus, the first DC generator 32a and the waveform generator constitute a voltage pulse generator. When the second DC generator 32b and the waveform generator constitute a voltage pulse generator, the voltage pulse generator is connected to at least one upper electrode. The voltage pulses may have either positive or negative polarity. Furthermore, the sequence of voltage pulses may include one or more positive voltage pulses and one or more negative voltage pulses within one period. The first and second DC generating units 32a and 32b may be provided in addition to the RF power supply 31, or the first DC generating unit 32a may be provided instead of the second RF generating unit 31b.

[0026] The plasma processing chamber 10 has a cylindrical space formed therein, with the main body 111 disposed at the center of the interior. The plasma processing chamber 10 has a gas exhaust port 10e formed around the periphery of the main body 111. The gas exhaust port 10e is formed at a position lower than a central region 111a of the main body 111 that supports the substrate W. In the plasma processing apparatus 1 according to the embodiment, the gas exhaust port 10e is formed at the bottom of the plasma processing chamber 10.

[0027] The exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure regulating valve regulates the pressure in the plasma processing space 10s. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof. The exhaust system 40 is an example of an exhaust mechanism of the present disclosure.

[0028] The plasma processing chamber 10 has an exhaust flow path 50 formed around the main body 111, through which exhaust flows to the gas outlet 10e. For example, the plasma processing chamber 10 has the main body 111 disposed with a gap between it and the side wall 10a, and a space formed between the inner surface of the side wall 10a and the side surface 111c of the main body 111, which space functions as the exhaust flow path 50. The exhaust flow path 50 is formed concentrically around the main body 111. In the plasma processing chamber 10, exhaust flows in the vertical direction of the exhaust flow path 50 around the main body 111. A plurality of flaps 60 are arranged in the exhaust flow path 50. The flaps 60 are an example of a plate-like member of the present disclosure.

[0029] 2 is a diagram showing an example of a schematic configuration of the plasma processing chamber 10 according to the embodiment. In FIG. 2, a cross section showing the schematic configuration of the plasma processing chamber 10 as viewed from the top surface side of the main body 111 is shown.

[0030] Each of the flaps 60 is formed in a flat plate shape. The flap 60 is formed, for example, from a flat member having a thickness of 5 mm or more and 10 mm or less. The flaps 60 are arranged in a circumferential direction on the outer surface of the main body 111. The flaps 60 are arranged at the same height around the periphery of the main body 111 in the radial direction of the main body 111. The radial direction is the radial direction from the central axis of the cylindrical main body 111. The flaps 60 are each formed in a shape corresponding to the cross-sectional shape of the exhaust flow path 50 in a direction intersecting the exhaust flow. In the plasma processing apparatus 1 according to the embodiment, the cross section of the exhaust flow path 50 is annular. The flaps 60 are formed in shapes obtained by dividing the annular shape of the exhaust flow path 50 at a fixed angle from the center of the annular shape.

[0031] Each of the flaps 60 is rotatable. Fig. 3 is a diagram illustrating an example of the configuration of the flap 60 according to the embodiment.

[0032] The flap 60 is fixed to a rod-shaped shaft 61. In Fig. 3, the direction of the shaft 61 of the flap 60 is indicated by a dashed dotted line L1. The flap 60 is rotatable around the shaft 61 as a rotation axis.

[0033] The plasma processing chamber 10 has one through-hole 10b formed in a sidewall 10a corresponding to the height of the arrangement position of the flap 60, and a shaft 70 is provided in the through-hole 10b. The through-hole 10b airtightly supports the shaft 70 while allowing it to rotate using a sealing member (not shown), such as a vacuum seal or a magnetic fluid seal. A power source 71, such as a servo motor, is provided outside the plasma processing chamber 10. The power source 71 is connected to the shaft 70 and drives it to rotate.

[0034] The plasma processing chamber 10 has an annular portion 72 that protrudes from the sidewall 10a toward the inside of the plasma processing chamber 10 along the arrangement positions of the flaps 60. The shafts 61 of each flap 60 reach and are supported by the annular portion 72. The annular portion 72 is provided with a transmission mechanism (not shown) that transmits the driving force of the shafts 70 to the shafts 61 of each flap 60. The transmission mechanism may have any configuration as long as it can transmit the rotation of the shafts 70 to rotate the shafts 61 of each flap 60. For example, the annular portion 72 has multiple shafts arranged in sequence in the circumferential direction corresponding to the multiple flaps 60, and the rotational drive of the shafts 70 can be transmitted to the multiple shafts via gears such as bevel gears. Each of the multiple shafts is provided with a worm gear, which rotates the shafts 61 of each flap 60. The transmission mechanism may be a link mechanism that transmits the rotation of the shafts 70 to rotate the shafts 61 of each flap 60. The transmission mechanism may be a rigid body such as a shaft, or may be a mechanism that transmits power by tension such as a steel wire. The shaft 70, the power source 71, and the transmission mechanism described above are examples of the drive mechanism of the present disclosure.

[0035] Each flap 60 can change its position between a vertical orientation in which the main plane is parallel to the exhaust flow and a horizontal orientation in which the main plane is perpendicular to the exhaust flow by rotating the shaft 61 using the driving force of the power source 71. The main plane is the surface of the flap 60 that is the largest in size.

[0036] The shaft 61 is electrically connected to the plasma processing chamber 10 or is grounded. In this case, the flap 60 is regarded as part of the ground with respect to the plasma generated inside the plasma processing chamber 10.

[0037] 4 is a diagram illustrating changes in the attitude of the flap 60 according to the embodiment. In FIG. 4, the angle of the flap 60 is shown by defining the angle of the flap 60 when the flap 60 is oriented in the vertical direction as 0°, and the angle of the flap 60 when the flap 60 is oriented in the horizontal direction as 90°. The attitude of each flap 60 changes synchronously between 0° and 90° by the driving force of the power source 71.

[0038] FIG. 5 is a diagram illustrating changes in the flow resistance of the exhaust flow path 50 according to the embodiment. FIG. 5 shows a cross section of the plasma processing chamber 10 as viewed from the top surface of the main body 111, illustrating a schematic configuration thereof. The exhaust flow path 50 is opened and closed by rotating each of the flaps 60. The flow resistance of the exhaust flow path 50 changes significantly by changing the rotation angle of each of the flaps 60 between 0° and 90°. For example, by orienting each of the flaps 60 vertically (at an angle of 0°) and enlarging the openings between the flaps 60, the flow resistance of the exhaust flow path 50 decreases. Furthermore, by orienting each of the flaps 60 horizontally (at an angle of 90°) and closing the openings between the flaps 60, the flow resistance of the exhaust flow path 50 increases.

[0039] In this way, the plasma processing apparatus 1 according to the embodiment can significantly change the flow resistance of the exhaust flow path 50 by changing the rotation angle of the flap 60, thereby widening the pressure control range.

[0040] By making the flap 60 have a plate thickness of 5 mm or more and 10 mm or less, it is possible to maintain strength against exhaust when oriented horizontally (at an angle of 90°) while minimizing the increase in flow path resistance when oriented vertically (at an angle of 0°).

[0041] As described above, the flap 60 is formed in a shape corresponding to the cross-sectional shape of the exhaust flow passage 50 in the direction intersecting the exhaust flow. For example, as shown in Figure 3, the end 60a of the flap 60 on the radially outer diameter side is curved in an arc shape corresponding to the shape of the outer surface of the exhaust flow passage 50.

[0042] However, if the radially inner end 60b of the flap 60 is curved to correspond to the circumferential curvature of the side surface 111c of the main body portion 111, the end 60b will interfere with the side surface 111c of the main body portion 111 when oriented in the vertical direction (angle 0°).

[0043] Therefore, the flap 60 is formed in a shape that does not interfere with the side surface 111c of the main body 111 even when oriented in the up-down direction (angle 0°). For example, as shown in Fig. 3, the flap 60 is formed so that the radially inner end 60b is perpendicular to the axis 61. As a result, even when the flap 60 is oriented in the up-down direction (angle 0°), the radially inner end 60b is parallel to the side surface 111c of the main body 111, so interference with the side surface 111c of the main body 111 can be suppressed.

[0044] However, in this configuration, when each flap 60 is oriented horizontally (at an angle of 90°), a gap 64 is formed between the end 60b of each flap 60 and the side surface 111c of the main body 111. Figure 6 is a diagram illustrating an example of a configuration near the flap 60 in the plasma processing chamber 10 according to this embodiment. Figure 6 shows a case where each flap 60 is oriented horizontally (at an angle of 90°). A gap 64 is formed between the end 60b of each flap 60 on the radially inner side facing the main body 111 and the side surface 111c of the main body 111.

[0045] Therefore, the main body 111 according to the embodiment has an annular portion 75 formed on the peripheral surface above the arrangement position of the multiple flaps 60. The annular portion 75 is formed to protrude to the radially inner ends 60b of the multiple flaps 60 oriented horizontally (at a 90° angle). For example, the annular portion 75 protrudes to cover the radially inner ends 60b of the multiple flaps 60. In FIG. 6 , the position of the annular portion 75 protruding from the side surface 111c of the main body 111 is indicated by a dotted line. This allows the annular portion 75 to cover the gap 64. The plasma processing apparatus 1 according to the embodiment can prevent exhaust gas from flowing through the gap 64 by covering the gap 64 with the annular portion 75.

[0046] Furthermore, each flap 60 is formed to partially overlap with the adjacent flap 60 when oriented horizontally (at a 90° angle). FIG. 7 is a diagram illustrating an example of the configuration of the overlapping portion of the flap 60 according to the embodiment. FIG. 7 shows a schematic cross-sectional configuration when two flaps 60 are oriented horizontally (at a 90° angle). Also, FIG. 7 uses arrows to indicate the direction of movement of the flaps 60 when the shaft 61 is rotated. To enable rotation, a slight gap 65 is formed between the adjacent flaps 60 when oriented horizontally (at a 90° angle). The flaps 60 are provided with a cover portion 62 that covers the gap 65. For example, the shaft 61 is provided on a surface of the flap 60 that is downstream of the exhaust flow at one end 60 c in the circumferential direction of the main body 111. The cover portion 62 is provided on a surface of the flap 60 that is upstream of the exhaust flow at one end 60 c. This allows the gap 65 to be covered by the cover portion 62 when the flap 60 is oriented horizontally (at an angle of 90°).

[0047] Returning to FIG. 1 , the controller 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform the various processes described herein. The controller 2 may be configured to control each element of the plasma processing apparatus 1 to perform the various processes described herein. In one embodiment, part or all of the controller 2 may be included in the plasma processing apparatus 1. The controller 2 may include a processor 2a1, a memory 2a2, and a communication interface 2a3. The controller 2 is implemented, for example, by a computer 2a. The memory 2a2 stores programs and various data. For example, the memory 2a2 stores a control program for controlling the plasma processing. The memory 2a2 also stores a recipe that stores processing condition data for the plasma processing. The recipe includes, as a processing condition, a pressure condition that specifies the pressure within the plasma processing chamber 10 during the plasma processing. The processor 2a1 reads and executes the control program from the memory 2a2 and controls each element of the plasma processing apparatus 1 based on the recipe stored in the memory 2a2. The programs and various data may be stored in the storage unit 2a2 in advance or may be acquired via a medium when needed. The acquired programs and various data are stored in the storage unit 2a2 and then read from the storage unit 2a2 and executed by the processing unit 2a1. The medium may be various storage media readable by the computer 2a or a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a central processing unit (CPU). The storage unit 2a2 may include a random access memory (RAM), a read-only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a local area network (LAN). The operation of the plasma processing apparatus 1 is controlled by a control unit 2 .

[0048] The control unit 2 controls the plasma processing apparatus 1 to perform various processes described in this disclosure. For example, the control unit 2 controls the power source 71 to control the rotation angle of each flap 60 in accordance with the pressure conditions of the plasma processing, thereby controlling the pressure inside the plasma processing chamber 10. When the pressure conditions are low, the control unit 2 controls the power source 71 to rotate each flap 60 in a direction parallel to the exhaust flow. When the pressure conditions are high, the control unit 2 controls the power source 71 to rotate each flap 60 in a direction perpendicular to the exhaust flow. The power source 71 rotates each flap 60 in accordance with the pressure conditions under the control of the control unit 2. For example, when the pressure conditions are low, the power source 71 rotates each flap 60 in a direction parallel to the exhaust flow, and when the pressure conditions are high, the power source 71 rotates each flap 60 in a direction perpendicular to the exhaust flow.

[0049] The plasma processing apparatus 1 performs plasma processing under the control of the control unit 2. For example, the plasma processing apparatus 1 performs plasma etching of an etching target film formed on a substrate W under the control of the control unit 2.

[0050] Next, a brief description will be given of a procedure for performing plasma processing such as plasma etching on a substrate W using the plasma processing system according to the embodiment. The substrate W is placed on the substrate support 11 by a transport mechanism such as a transport arm (not shown). When performing plasma processing, the plasma processing apparatus 1 reduces the pressure inside the plasma processing chamber 10 using the exhaust system 40. For example, the control unit 2 controls the power source 71 to control the rotation angle of each flap 60 in accordance with the pressure conditions of the plasma processing, thereby controlling the pressure inside the plasma processing chamber 10.

[0051] The plasma processing apparatus 1 supplies a processing gas from the gas supply unit 20 and introduces the processing gas into the plasma processing chamber 10 through the shower head 13. The plasma processing apparatus 1 then supplies at least one RF signal from the RF power supply 31 to generate plasma in the plasma processing space 10s, and performs plasma processing on the substrate W.

[0052] The plasma processing apparatus 1 can significantly change the flow resistance of the exhaust flow path 50 by changing the orientation (angle) of each flap 60, thereby widening the pressure control range of the plasma processing space 10s side in the plasma processing chamber 10. For example, the plasma processing apparatus 1 can increase the flow resistance of the exhaust flow path 50 by orienting each flap 60 horizontally (at an angle of 90°), thereby increasing the pressure in the plasma processing space 10s. In this case, the plasma processing apparatus 1 can further increase the pressure in the plasma processing space 10s by introducing gas from the gas supply unit 20 into the plasma processing space 10s via the shower head 13. Furthermore, the plasma processing apparatus 1 can reduce the flow resistance of the exhaust flow path 50 by orienting each flap 60 vertically (at an angle of 0°), thereby reducing the pressure in the plasma processing space 10s.

[0053] Furthermore, in the plasma processing apparatus 1, by changing the orientation (angle) of each flap 60, the flow path resistance of the exhaust flow path 50 can be significantly changed, thereby quickly changing the pressure in the plasma processing space 10s in the plasma processing chamber 10. For example, by orienting the flaps 60 horizontally (at an angle of 90°), the plasma processing apparatus 1 can prevent gas in the plasma processing space 10s from flowing into the exhaust flow path 50, thereby quickly increasing the pressure in the plasma processing space 10s. Furthermore, by orienting the flaps 60 vertically (at an angle of 0°), the plasma processing apparatus 1 can quickly exhaust gas in the plasma processing space 10s through the exhaust flow path 50, thereby quickly reducing the pressure in the plasma processing space 10s.

[0054] [Processing Flow] Next, a processing flow of the pressure control method performed by the plasma processing apparatus 1 according to the embodiment will be described. Fig. 8 is a diagram illustrating an example of a processing sequence of the pressure control method according to the embodiment. The processing of the pressure control method shown in Fig. 8 is performed when performing plasma processing on a substrate W.

[0055] The control unit 2 reads out the pressure conditions for the plasma processing to be performed from the recipe stored in the storage unit 2a2 (step S10).

[0056] The control unit 2 controls the power source 71 to control the rotation angle of each flap 60 in accordance with the read pressure conditions, thereby controlling the pressure inside the plasma processing chamber 10 (step S11). When the pressure condition is low, the control unit 2 controls the power source 71 to rotate each flap 60 in a direction parallel to the exhaust flow. When the pressure condition is high, the control unit 2 controls the power source 71 to rotate each flap 60 in a direction perpendicular to the exhaust flow.

[0057] The control unit 2 determines whether or not to terminate the plasma processing (step S12). If the plasma processing is not to be terminated (step S12: No), the process proceeds to step S11. On the other hand, if the plasma processing is to be terminated (step S12: Yes), the process is terminated.

[0058] In the above embodiment, the drive mechanism (shaft 70, power source 71, and transmission mechanism) that rotates and drives the flaps 60 is provided on the outer periphery of the flaps 60. However, this is not limiting. The drive mechanism may be provided on the inner periphery of each flap 60, and may rotate and drive each flap 60 from the inner periphery.

[0059] In the above embodiment, all flaps 60 are rotated by a single drive mechanism. However, this is not limiting. For example, the plasma processing apparatus 1 may divide the exhaust flow path 50 into multiple areas in the circumferential direction of the main body 111, and provide a drive mechanism for rotating each flap 60 in each area. Furthermore, for example, the plasma processing apparatus 1 may provide a separate drive mechanism for each flap 60 so that the rotation angle of each flap 60 can be individually changed. In this case, the plasma processing apparatus 1 can change the exhaust characteristics in the circumferential direction of the main body 111 by changing the rotation angle of each flap 60 for each area or individually. The control unit 2 may control each drive mechanism to uniformize the exhaust characteristics in the circumferential direction of the main body 111. For example, the plasma processing apparatus 1 can suppress circumferential variation in the etching rate by controlling the exhaust characteristics in the circumferential direction of the main body 111.

[0060] In the above embodiment, the rotation of the power source 71 is transmitted to the shaft 61 via a shaft, gear, or the like to rotate the flap 60. However, this is not limiting. For example, a torsion spring may be provided on the shaft 61, and the flap 60 may be configured to return to the horizontal orientation (at a 90° angle) by the restoring force of the torsion spring provided on the shaft 61. The flap 60 may also be configured to return to the horizontal orientation (at a 90° angle) by the restoring force of magnetic force, atmospheric pressure, or the like. This allows the plasma processing apparatus 1 to tightly and uniformly close the flaps 60 in a closed horizontal orientation (at a 90° angle). In this case, the flap 60 may be configured to rotate in a direction that opens the exhaust flow path 50 by the driving force of the drive mechanism and to rotate in a direction that closes the exhaust flow path 50 by the restoring force. For example, the plasma processing apparatus 1 may be configured such that a drive mechanism rotates each flap 60 to a rotation angle of 90° or less, and a restoring force returns each flap 60 to a horizontal orientation (angle of 90°). Alternatively, the plasma processing apparatus 1 may be configured such that a steel thread is fixed to the underside of each flap 60, and a motor pulls the steel thread downward to rotate each flap 60 to a rotation angle of 90° or less, and a restoring force returns each flap 60 to a horizontal orientation (angle of 90°). The rotation angle of the flap 60 can be controlled by balancing the pulling force of the motor and the restoring force of the flap 60 via the steel thread.

[0061] Furthermore, the shape of each flap 60 shown in the above embodiment is merely an example and is not limited thereto. Each flap 60 may be formed into a shape that divides the cross-sectional shape of the exhaust flow path 50 in a direction intersecting the exhaust flow. Other examples of flaps will be described below. FIGS. 9A and 9B are diagrams illustrating an example of another flap configuration according to an embodiment. FIG. 9A shows a cross-section illustrating the schematic configuration of the plasma processing chamber 10 as viewed from the top side of the main body 111. Three flaps 80 (80a to 80c) are arranged in the exhaust flow path 50. Each of the flaps 80 is formed in a flat plate shape. The flaps 80 are formed of a member with a plate thickness of, for example, 5 mm or more and 10 mm or less. The three flaps 80 are arranged in a circumferential direction on the outer surface of the main body 111. Each of the three flaps 80 is rotatable about an axis perpendicular to the radial direction of the main body 111. In FIGS. 9A and 9B, the axes around which the flaps 80a to 80c can rotate are indicated by dashed-dotted lines L2a to L2c. In the plasma processing apparatus 1, even in the case of the flaps 80 shown in FIGS. 9A and 9B, the pressure control range of the plasma processing space 10s in the plasma processing chamber 10 can be expanded by changing the orientation (angle) of each flap 80. FIGS. 10A and 10B show an example of another flap configuration according to the embodiment. FIG. 10A shows a cross section of the plasma processing chamber 10 as viewed from the top surface of the main body 111, illustrating a schematic configuration of the plasma processing chamber 10. Four flaps 82 (82a to 82d) are arranged in the exhaust flow path 50. Each of the flaps 82 is formed in a flat plate shape. The flaps 82 are formed of a member having a thickness of, for example, 5 mm or more and 10 mm or less. Each of the four flaps 82 is rotatable about an axis. 9A and 9B, the axes around which the flaps 82a to 82c can rotate are indicated by dashed dotted lines L3a to L3d. In the case of the flaps 82 shown in FIGS. 10A and 10B, the plasma processing apparatus 1 can also widen the control range of the pressure on the plasma processing space 10s side in the plasma processing chamber 10 by changing the orientation (angle) of each flap 82.

[0062] In the above embodiment, the multiple flaps 60 are each formed as a flat plate, as shown in, for example, FIGS. 2 to 7 . However, the shape of the multiple flaps 60 is not limited thereto. For example, the multiple flaps 60 may be formed as a curved plate. FIGS. 11A to 11C are diagrams showing another example of the configuration of the flap 60 according to the embodiment. FIGS. 11A to 11C show cross sections illustrating the schematic configuration of the flap 60 from the side. Also, in FIGS. 11A to 11C, the arrows indicate the direction of movement of the flap 60 when the shaft 61 is rotated. FIG. 11A shows a case where the flap 60 is formed as a curved plate with an upward convex shape. FIG. 11B shows a case where the flap 60 is formed as a curved plate with a downward convex shape. The shaft 61 is electrically connected to the plasma processing chamber 10 or is grounded. In this case, the flap 60 is considered to be part of the ground with respect to the plasma generated inside the plasma processing chamber 10. The flap 60 is formed as a bent plate as shown in FIGS. 11A and 11B, so that the area of ​​the ground is larger than that of a flat plate.

[0063] It is generally known that the density of the plasma generated, the potential, and the bias applied to the substrate W are determined by the ground area. Therefore, by changing each of the multiple flaps 60 from a flat plate shape to a curved shape as shown in Figures 11A and 11B, it is possible to adjust the density of the plasma, the potential, and the bias applied to the substrate W.

[0064] The bending portion is not limited to one point as shown in Figures 11A and 11B. For example, there may be two or more bending portions as shown in Figure 11C. Figure 11C shows a plate that is bent upwardly and downwardly. Furthermore, the bending portion is not limited to a linear bending as shown in Figures 11A to 11C, and may be curved, for example, in a curved shape.

[0065] In the above embodiment, as shown in, for example, Figures 2 to 7, the multiple flaps 60 are each identical in shape and are arranged circumferentially at the same height on the outer surface of the main body 111. However, this is not limited to this. For example, the multiple flaps 60 may be formed in different shapes and arranged at different heights on the outer surface of the main body 111. Figures 12A to 12C are diagrams showing another example of the configuration of the flap 60 according to the embodiment. Figures 12A to 12C show a cross section illustrating the schematic configuration of the flap 60 from the side. In addition, in Figures 12A to 12C, the arrows indicate the direction of movement of the flap 60 when the shaft 61 is rotated. Figure 12A shows a case where two types of flaps 60-1 and 60-2, each with a different curved shape, are arranged alternately as the flap 60. The shaft 61 is provided on one end surface of each of the flaps 60-1 and 60-2. The flaps 60-1 and 60-2 are arranged such that the heights of their axes 61 are staggered, with the axis 61 of the flap 60-1 being positioned higher than the axis 61 of the flap 60-2. The side of the flap 60-1 opposite the axis 61 is bent downward so that it is at the same height as the axis 61 side of the flap 60-2 when the exhaust flow path 50 is closed, and reaches the flap 60-2. The side of the flap 60-2 opposite the axis 61 is bent upward so that it is at the same height as the axis 61 side of the flap 60-1 when the exhaust flow path 50 is closed, and reaches the flap 60-1. Figure 12B shows a case where the flaps 60 are arranged in combination with two types of flaps 60-1 and 60-2 having different bent shapes and a flat, plate-like flap 60-3. In Fig. 12B, flaps 60-1, 60-2, and 60-3 are alternately arranged in this order, with the axis 61 of flap 60-1 and flap 60-3 being positioned higher than the axis 61 of flap 60-2. Note that Fig. 12B may also be configured such that flaps 60-1, 60-3, and 60-2 are alternately arranged in this order, with the axis 61 of flap 60-1 being positioned higher than the axis 61 of flaps 60-2 and 60-3. Fig. 12C shows a case where two types of flaps 60-1 and 60-2 with different curved shapes and flat plate-like flaps 60-3 and 60-4 are combined and arranged as flaps 60.12C, the flaps 60-1, 60-4, 60-2, and 60-3 are alternately arranged in this order, and the axes 61 of the flaps 60-1 and 60-3 are positioned higher than the axis 61 of the flap 60-2. In the case of the multiple flaps 60 shaped as shown in FIGS. 12A to 12C, as in the case of the flat, plate-shaped flaps 60 shown in FIGS. 11A and 11B, the ground area is larger than that of the flat, plate-shaped flaps 60, making it possible to adjust the plasma density, potential, and bias applied to the substrate W. In addition, in the case of the multiple flaps 60 shaped as shown in FIG. 12B, the ground area per unit angle in the circumferential direction can be adjusted by combining the curved flaps 60 with the flat, plate-shaped flaps 60, making it possible to locally adjust the plasma density, potential, and bias applied to the substrate W.

[0066] 13 and 14 are diagrams illustrating changes in the orientation of the flaps 60 according to the embodiment. FIGS. 13 and 14 illustrate a case where the flaps 60 are configured with the flaps 60-1, 60-2, and 60-3 shown in FIG. 12C . In FIGS. 13 and 14 , the rotation angle of the flaps 60 is shown by defining the angle of the flaps 60 (60-1, 60-2, and 60-3) when the flaps 60 are oriented vertically as 0° and the angle of the flaps 60 when the flaps 60 are oriented horizontally as 90°. The orientation of each of the flaps 60 changes synchronously between 0° and 90° due to the driving force of the power source 71. FIG. 15 illustrates changes in the flow path resistance of the exhaust flow path 50 according to the embodiment. FIG. 15 illustrates a case where the flaps 60 are configured with the flaps 60-1, 60-2, and 60-3 shown in FIG. 12C . FIG. 15 shows a cross section of the plasma processing chamber 10 as viewed from the top of the main body 111. The exhaust flow path 50 is opened and closed by rotating the flaps 60 (60-1, 60-2, 60-3). Changing the rotation angle of each flap 60 between 0° and 90° significantly changes the flow resistance of the exhaust flow path 50. For example, by orienting the flaps 60 vertically (at an angle of 0°) and enlarging the openings between the flaps 60, the flow resistance of the exhaust flow path 50 decreases. Furthermore, by orienting the flaps 60 horizontally (at an angle of 90°) and closing the openings between the flaps 60, the flow resistance of the exhaust flow path 50 increases. In this way, the plasma processing apparatus 1 according to the embodiment can significantly change the flow resistance of the exhaust flow path 50 by changing the rotation angle of the flaps 60, thereby widening the pressure control range.

[0067] In the above embodiment, flat plate-like flaps 60 are provided around the entire periphery of the main body 111. However, this is not limiting. For example, flat plate-like flaps 60 and bent / curved flaps 60 may be separately arranged around the periphery of the main body 111. For example, the periphery of the main body 111 may be divided into multiple regions in the circumferential direction, and flat plate-like flaps 60 or bent / curved flaps 60 may be arranged in each region. FIG. 16 is a diagram illustrating another example of the arrangement of flaps 60 according to this embodiment. FIG. 16 shows a cross section illustrating a schematic configuration of the plasma processing chamber 10 as viewed from the top side of the main body 111. For example, the periphery of the main body 111 may be divided into regions 115a and 115b in the circumferential direction, and flat plate-like flaps 60 and bent / curved flaps 60 may be arranged in the regions 115a and 115b. The sizes of the regions 115a and 115b are appropriately determined during design. 16, the periphery of the main body 111 is divided into a small region 115a and a large region 115b in the circumferential direction. Bent flaps 60 are arranged in region 115a. Flat, plate-like flaps 60 are arranged in region 115b. The ground area per unit angle can be adjusted by combining flat flaps 60 with bent or curved flaps 60. This allows the plasma density, potential, and bias applied to the substrate W to be adjusted in the circumferential direction of the plasma processing chamber 10.

[0068] Although not shown in the drawings, the description has been given assuming that the surfaces of the flaps 60 are flat, but this is not limiting. For example, the surfaces of the flaps 60 may be formed with irregularities or grooves by dimple processing (tiny depressions). These irregularities or grooves also increase the ground area compared to a flat surface, making it possible to adjust the plasma density, potential, and bias applied to the substrate W.

[0069] As described above, the plasma processing apparatus 1 according to the embodiment includes a plasma processing chamber 10 (processing vessel), multiple flaps 60, 80, and 82 (plate-shaped members), and a drive mechanism (shaft 70, power source 71, and transmission mechanism). The plasma processing chamber 10 includes a main body 111 (support) that supports a substrate W from above. A gas exhaust port 10e (exhaust port) connected to an exhaust system 40 (exhaust mechanism) is formed around the main body 111 at a position lower than the upper surface. An exhaust flow path 50 through which exhaust flows to the gas exhaust port 10e is formed around the main body 111. The multiple flaps 60, 80, and 82 are located upstream of the gas exhaust port 10e with respect to the exhaust flow of the exhaust flow path 50, and are configured to open and close the exhaust flow path 50 by rotating. The drive mechanism rotates the multiple flaps 60, 80, and 82. This allows the plasma processing apparatus 1 to expand the pressure control range.

[0070] Furthermore, the flaps 60, 80, and 82 are formed in a shape that corresponds to the cross-sectional shape of the exhaust flow path 50 in a direction intersecting the exhaust flow. This allows the plasma processing apparatus 1 to suppress the formation of gaps when the flaps 60, 80, and 82 are rotationally driven to close the exhaust flow path 50, thereby widening the pressure control range.

[0071] The main body 111 is formed in a cylindrical shape with its axis in the vertical direction. The multiple flaps 60, 80 are arranged at the same height on the circumferential surface of the main body 111 in the radial direction of the main body 111, and are each rotatable around the radial direction as a rotation axis. This allows the plasma processing apparatus 1 to open and close the exhaust flow path 50 by rotating the multiple flaps 60, 80, thereby expanding the pressure control range.

[0072] Furthermore, by rotating about the rotation axis, the multiple flaps 60 can change their position between a position parallel to the exhaust flow and a position perpendicular to the exhaust flow, with the radially inner end 60b formed perpendicular to the rotation axis. The main body 111 has an annular portion 75 formed above the arrangement position of the multiple flaps 60 on the peripheral surface, protruding to the radially inner end 60b of the multiple flaps 60 oriented perpendicular to the exhaust flow. This allows the plasma processing apparatus 1 to cover the gap 64 formed between the end 60b of each flap 60 and the side surface 111c of the main body 111 with the annular portion 75, thereby preventing exhaust gas from flowing through the gap 64. In this way, the plasma processing apparatus 1 can prevent exhaust gas from flowing through the gap 64, thereby expanding the pressure control range.

[0073] Furthermore, the exhaust flow path 50 is formed concentrically around the circumferential surface of the main body 111. The radially outer ends 60a of the flaps 60, 80, 82 are formed in an arc shape corresponding to the shape of the outer surface of the exhaust flow path 50. This allows the plasma processing apparatus 1 to suppress the formation of gaps on the outer surface of the exhaust flow path 50 when the flaps 60, 80, 82 are rotationally driven to close the exhaust flow path 50, thereby widening the pressure control range.

[0074] Furthermore, the flaps 60 are formed so as to overlap with adjacent flaps 60 when the exhaust flow path 50 is closed. This allows the plasma processing apparatus 1 to prevent exhaust gas from flowing between the flaps 60 when the flaps 60 are rotationally driven to close the exhaust flow path 50, thereby widening the pressure control range.

[0075] Furthermore, when the exhaust flow path 50 is closed, gaps 65 are formed between the multiple flaps 60 and adjacent flaps 60, and cover portions 62 are provided to cover the gaps 65. As a result, when the multiple flaps 60 are rotationally driven to close the exhaust flow path 50, the plasma processing apparatus 1 can prevent exhaust gas from flowing between the flaps 60, thereby widening the pressure control range. As a result, when the multiple flaps 60 are rotationally driven to close the exhaust flow path 50, the plasma processing apparatus 1 can prevent exhaust gas from flowing between the gaps 65 between the flaps 60, thereby widening the pressure control range.

[0076] The drive mechanism rotates the flaps 60, 80, 82 in accordance with the pressure conditions. When the pressure condition is low, the drive mechanism rotates the flaps 60, 80, 82 in a direction parallel to the exhaust flow, and when the pressure condition is high, the drive mechanism rotates the flaps 60, 80, 82 in a direction perpendicular to the exhaust flow. This allows the plasma processing apparatus 1 to control the pressure inside the plasma processing chamber 10 in accordance with the pressure conditions.

[0077] The driving mechanism is configured to be able to individually change the rotation angles of the multiple flaps 60. The plasma processing apparatus 1 further includes a control unit 2. The control unit 2 controls the driving mechanism so that the exhaust characteristics are uniform in the circumferential direction of the main body 111. This allows the plasma processing apparatus 1 to suppress circumferential variations in the etching rate.

[0078] The thickness of the flaps 60, 80, 82 is 5 mm or more and 10 mm or less. This allows the plasma processing apparatus 1 to maintain strength against exhaust when the flaps 60, 80, 82 are oriented horizontally (at an angle of 90°), while minimizing an increase in flow path resistance when the flaps 60, 80, 82 are oriented vertically (at an angle of 0°).

[0079] Furthermore, the driving force of the drive mechanism causes the multiple flaps 60, 80, 82 to rotate in a direction that opens the exhaust flow path 50, and the restoring force causes the flaps 60, 80, 82 to rotate in a direction that closes the exhaust flow path 50. As a result, the plasma processing apparatus 1 can tightly and uniformly bring the flaps 60, 80, 82 into contact with each other when the flaps 60, 80, 82 are closed.

[0080] It should be noted that the disclosed embodiments are illustrative in all respects and should not be considered limiting. Indeed, the above-described embodiments may be embodied in various forms. Furthermore, the above-described embodiments may be omitted, substituted, or modified in various forms without departing from the scope and spirit of the appended claims.

[0081] In the above embodiment, the plasma processing is performed on a semiconductor wafer as the substrate W, but the present invention is not limited to this.

[0082] In the above embodiment, the substrate processing is described as being performed on the substrate W by plasma processing such as plasma etching, but is not limited thereto. The substrate processing may be any type of substrate processing that is performed by evacuating the processing vessel and controlling the pressure within the processing vessel. For example, the substrate processing may be a film formation process, a modification process, or a heat treatment such as ashing.

[0083] Furthermore, in the above embodiment, a plasma processing system has been described as an example of the vacuum processing apparatus, but the present invention is not limited to this. The vacuum processing apparatus may be any apparatus that controls the pressure within a chamber and performs substrate processing on a substrate W within the chamber. For example, the vacuum processing apparatus may be a plasma etching apparatus, a film forming apparatus, a modification apparatus, or a heat treatment apparatus such as an ashing apparatus.

[0084] Furthermore, the following additional notes are disclosed regarding the above-described embodiment.

[0085] (Supplementary Note 1) A vacuum processing apparatus comprising: a processing vessel having a support section therein for supporting a substrate from an upper surface thereof, an exhaust port connected to an exhaust mechanism formed around the support section at a position lower than the upper surface thereof, and an exhaust flow path formed around the support section through which exhaust flows to the exhaust port; a plurality of plate-like members provided upstream of the exhaust port with respect to the flow of exhaust in the exhaust flow path, and configured so that the exhaust flow path can be opened and closed by rotating; and a drive mechanism for rotationally driving the plurality of plate-like members.

[0086] (Supplementary Note 2) The vacuum processing apparatus according to Supplementary Note 1, wherein the plurality of plate-like members are formed in a shape corresponding to a cross-sectional shape of the exhaust flow path in a direction intersecting the exhaust flow.

[0087] (Supplementary Note 3) The vacuum processing apparatus according to Supplementary Note 1 or 2, wherein the support portion is formed in a cylindrical shape with an axis in the vertical direction, and the plurality of plate-like members are each arranged on the circumferential surface of the support portion in a radial direction of the support portion, and are each rotatable with the radial direction as a rotation axis.

[0088] (Appendix 4) The vacuum processing apparatus described in Appendix 3, wherein the plurality of plate-like members are capable of changing their position between a position parallel to the exhaust flow and a position perpendicular to the exhaust flow by rotating on the rotation axis, and the radially inner ends are formed perpendicular to the rotation axis, and the support portion has an annular portion formed above the arrangement positions of the plurality of plate-like members on the circumferential surface, protruding to the radially inner ends of the plurality of plate-like members oriented perpendicular to the exhaust flow.

[0089] (Appendix 5) The vacuum processing apparatus according to appendix 3 or 4, wherein the exhaust flow path is formed concentrically around the peripheral surface of the support part, and the radially outer ends of the plurality of plate-like members are formed in an arc shape corresponding to the shape of the outer surface of the exhaust flow path.

[0090] (Supplementary Note 6) The vacuum processing apparatus according to any one of Supplementary Notes 1 to 5, wherein the plurality of plate-like members are formed so as to overlap with adjacent plate-like members when the exhaust flow path is closed.

[0091] (Supplementary Note 7) The vacuum processing apparatus according to Supplementary Note 6, wherein when the exhaust flow path is closed, gaps are formed between adjacent plate-like members, and a cover portion is provided to cover the gaps.

[0092] (Supplementary Note 8) The vacuum processing apparatus according to any one of Supplementary Notes 1 to 7, wherein the drive mechanism rotates the plurality of plate-like members in accordance with a pressure condition.

[0093] (Supplementary Note 9) The vacuum processing apparatus described in Supplementary Note 8, wherein the drive mechanism rotates the plurality of plate-shaped members in a direction parallel to the exhaust flow when the pressure condition is low, and rotates the plurality of plate-shaped members in a direction perpendicular to the exhaust flow when the pressure condition is high.

[0094] (Supplementary Note 10) The vacuum processing apparatus according to any one of Supplementary Notes 1 to 9, further comprising a control unit that controls the drive mechanism so as to make the exhaust characteristics uniform in a circumferential direction of the support portion, the control unit being configured so that the drive mechanism can individually change the rotation angles of the plurality of plate-like members.

[0095] (Supplementary Note 11) The vacuum processing apparatus according to any one of Supplementary Notes 1 to 10, wherein the thickness of the plurality of plate-like members is 5 mm or more and 10 mm or less.

[0096] (Supplementary Note 12) The vacuum processing apparatus according to any one of Supplementary Notes 1 to 11, wherein the plurality of plate-like members rotate in a direction to open the exhaust flow path by a driving force of the driving mechanism and rotate in a direction to close the exhaust flow path by a restoring force.

[0097] (Supplementary Note 13) A pressure control method for a vacuum processing apparatus having: a processing vessel having a support part therein that supports a substrate from an upper surface, an exhaust port connected to an exhaust mechanism formed around the support part at a position lower than the upper surface, and an exhaust flow path formed around the support part through which exhaust flows to the exhaust port; a plurality of plate-like members that are provided upstream of the exhaust port with respect to the flow of exhaust in the exhaust flow path and are configured so that the exhaust flow path can be opened and closed by rotating; a drive mechanism that rotationally drives the plurality of plate-like members; and a controller, wherein the controller controls the drive mechanism to rotate the plurality of plate-like members in a direction parallel to the flow of exhaust when the pressure condition is low, and to rotate the plurality of plate-like members in a direction perpendicular to the flow of exhaust when the pressure condition is high.

[0098] 1 Plasma processing apparatus 2 Control unit 2a Computer 2a1 Processing unit 2a2 Memory unit 2a3 Communication interface 10 Plasma processing chamber 10a Side wall 10b Through hole 10e Gas exhaust port 10s Plasma processing space 11 Substrate support 13 Shower head 40 Exhaust system 50 Exhaust flow path 60, 60-1 to 60-4, 80, 80a to 80c, 82, 82a to 82c Flaps 60a, 60b, 60c End 61 Shaft 62 Cover 64, 65 Gap 70 Shaft 71 Power source 72 Annular portion 75 Annular portion 111 Main body 111a Central region 111b Annular region 111c Side 112 Ring assembly 1110 Base 1111 Electrostatic chuck W substrate

Claims

1. A vacuum processing apparatus having: a processing vessel having a support section therein for supporting a substrate from above, an exhaust port connected to an exhaust mechanism formed around the support section at a position lower than the upper surface thereof, and an exhaust flow path formed around the support section through which exhaust flows to the exhaust port; a plurality of plate-like members provided upstream of the exhaust port with respect to the flow of exhaust in the exhaust flow path, and configured so that the exhaust flow path can be opened and closed by rotating; and a drive mechanism for rotating the plurality of plate-like members.

2. The vacuum processing apparatus according to claim 1, wherein the plurality of plate-like members are formed in a shape corresponding to the cross-sectional shape of the exhaust flow path in a direction intersecting the exhaust flow.

3. The vacuum processing apparatus according to claim 1, wherein the support part is formed in a cylindrical shape with an axis in the vertical direction, and the plurality of plate-like members are each arranged on the circumferential surface of the support part in the radial direction of the support part, and each is rotatable with the radial direction as a rotation axis.

4. A vacuum processing apparatus as described in claim 3, wherein the plurality of plate-like members are capable of changing their position between a position parallel to the exhaust flow and a position perpendicular to the exhaust flow by rotating on the rotation axis, the radially inner ends are formed perpendicular to the rotation axis, and the support portion has an annular portion formed above the arrangement position of the plurality of plate-like members on the circumferential surface, which protrudes to the radially inner ends of the plurality of plate-like members oriented perpendicular to the exhaust flow.

5. The vacuum processing apparatus according to claim 3, wherein the exhaust flow path is formed concentrically around the peripheral surface of the support part, and the radially outer ends of the plurality of plate-like members are formed in an arc shape corresponding to the shape of the outer surface of the exhaust flow path.

6. The vacuum processing apparatus according to claim 1, wherein the plurality of plate-like members are formed so as to overlap with adjacent plate-like members when the exhaust flow path is closed.

7. The vacuum processing apparatus according to claim 6, wherein when the exhaust flow path is closed, gaps are formed between adjacent plate-like members, and a cover portion is provided to cover the gaps.

8. The vacuum processing apparatus according to claim 1, wherein the drive mechanism rotates the plurality of plate-like members in accordance with pressure conditions.

9. The vacuum processing apparatus according to claim 8, wherein the driving mechanism rotates the plurality of plate-like members in a direction parallel to the exhaust flow when the pressure condition is low, and rotates the plurality of plate-like members in a direction perpendicular to the exhaust flow when the pressure condition is high.

10. The vacuum processing apparatus according to claim 1, further comprising a control unit that controls the drive mechanism so as to uniform the exhaust characteristics in the circumferential direction of the support portion, the drive mechanism being configured to be able to individually change the rotation angles of the plurality of plate-like members.

11. The vacuum processing apparatus according to claim 1, wherein the thickness of the plurality of plate-like members is 5 mm or more and 10 mm or less.

12. The vacuum processing apparatus according to claim 1, wherein the plurality of plate-like members are rotated in a direction that opens the exhaust flow path by the driving force of the driving mechanism, and are rotated in a direction that closes the exhaust flow path by the restoring force.

13. A pressure control method for a vacuum processing apparatus having: a processing vessel having a support part therein that supports a substrate from above, an exhaust port connected to an exhaust mechanism formed around the support part at a position lower than the upper surface of the support part, and an exhaust flow path formed around the support part through which exhaust flows to the exhaust port; a plurality of plate-like members that are provided upstream of the exhaust port with respect to the flow of exhaust in the exhaust flow path and are configured so that the exhaust flow path can be opened and closed by rotating; a drive mechanism that rotates the plurality of plate-like members; and a control unit, wherein the control unit controls the drive mechanism to rotate the plurality of plate-like members in a direction parallel to the exhaust flow when the pressure condition is low, and to rotate the plurality of plate-like members in a direction perpendicular to the exhaust flow when the pressure condition is high.

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