Laser-based chuck heating device and substrate processing device comprising same

Abstract

A laser-based chuck heating device according to an embodiment of the present invention comprises: a support chuck including a chuck plate, which supports a substrate, a light absorption part, which includes a light absorption material that absorbs laser light, and a thermal interface layer, which is disposed between the chuck plate and the light absorption part; and a chuck temperature control device for controlling the temperature of the support chuck by irradiating the light absorption part with a laser having a wavelength set according to the maximum light absorption rate of the light absorption material, thereby causing light energy of the laser to be absorbed into the light absorption material.

Description

Laser-based chuck heating device and substrate processing device including the same

[0001] The present invention relates to a chuck heating device and a substrate processing device including the same, and more particularly, to a chuck heating device and a substrate processing device that heat a chuck using a laser.

[0002] Semiconductor integrated circuits (ICs) are typically very small, thin silicon chips, but they are comprised of various electronic components. To create a single semiconductor chip, they undergo various manufacturing processes, including photolithography, etching, deposition, reflow, and packaging. Semiconductor manufacturing requires temperature control of the substrate, and heating the chuck that supports the substrate is typically used.

[0003] Conventional chuck heating methods achieve temperature control largely through two heat transfer methods. The first method involves burying a fluid-flowing tube within the chuck, controlling the flow rate and temperature of the fluid. This method utilizes an external heat exchanger, or other device, to control the chuck temperature.

[0004] The second method involves embedding a heating element, which acts as a heat source, within the chuck to control temperature. In this case, a pipe through which fluid flows is embedded, and power is applied to the heating element to heat it. Cooling is controlled by controlling the fluid flow rate. This achieves thermal equilibrium between heating and cooling, thereby controlling the chuck's temperature.

[0005] Conventional techniques for controlling chuck temperature have difficulty rapidly controlling the chuck temperature, so methods that maintain the chuck temperature at an appropriate level are commonly used. However, when temperature fluctuations are required according to the process recipe, this method of maintaining the temperature is limited.

[0006] The present invention provides a laser-based chuck heating device and substrate processing device capable of efficiently and effectively heating a chuck using a laser.

[0007] In addition, the present invention provides a laser-based chuck heating device and substrate processing device capable of uniformly heating a chuck using a laser.

[0008] The problems to be solved by the present invention are not limited to the problems described above, and other problems not mentioned will be clearly understood by those skilled in the art from the description below.

[0009] An embodiment of the present invention may provide a laser-based chuck heating device, including a chuck plate for supporting a substrate, a light absorbing portion including a light absorbing material for absorbing laser light, and a thermal interface layer disposed between the chuck plate and the light absorbing portion; and a chuck temperature control device for controlling the temperature of the support chuck by irradiating the light absorbing portion with a laser having a wavelength set according to the maximum light absorption rate of the light absorbing material and causing the light energy of the laser to be absorbed by the light absorbing material.

[0010] An embodiment of the present invention can provide a laser-based chuck heating device, wherein the heat transfer medium layer includes a material having a higher thermal conductivity than the light absorbing portion.

[0011] An embodiment of the present invention can provide a laser-based chuck heating device, wherein the heat transfer medium layer includes a first layer in contact with the chuck plate and a second layer in contact with the light absorbing portion.

[0012] An embodiment of the present invention may provide a laser-based chuck heating device, wherein the first layer and the second layer are bonded to each other by copper to copper bonding.

[0013] An embodiment of the present invention can provide a laser-based chuck heating device, wherein the heat transfer medium layer includes a refrigerant pipe through which a refrigerant flows.

[0014] An embodiment of the present invention may provide a laser-based chuck heating device, wherein the heat transfer medium layer includes a region having a first thickness and a region having a second thickness smaller than the first thickness.

[0015] An embodiment of the present invention can provide a laser-based chuck heating device, wherein the light absorbing portion has a textured surface.

[0016] An embodiment of the present invention may provide a laser-based chuck heating device, wherein the support chuck further includes an anti-reflection layer disposed under the light absorbing portion.

[0017] An embodiment of the present invention can provide a laser-based chuck heating device, wherein the wavelength of the laser is set according to a maximum light absorption rate of 60% or more of the light-absorbing material within a wavelength range of 700 nm to 1500 nm.

[0018] An embodiment of the present invention can provide a substrate processing device including a laser-based chuck heating device and a processing unit that performs processing on the substrate within a chamber.

[0019] According to an embodiment of the present invention, a laser-based chuck heating device and substrate processing device capable of efficiently and effectively heating a chuck using a laser are provided.

[0020] In addition, according to an embodiment of the present invention, a laser-based chuck heating device and substrate processing device capable of uniformly heating a chuck using a laser are provided.

[0021] The effects according to the present invention are not limited to the effects described above, and other effects not mentioned will be clearly understood by those skilled in the art from the description below.

[0022] FIG. 1 is a schematic diagram of a laser-based chuck heating device according to an embodiment of the present invention.

[0023] FIG. 2 is a schematic plan view of a laser-based chuck heating device according to an embodiment of the present invention.

[0024] FIG. 3 is an enlarged view of a laser-based chuck heating device according to an embodiment of the present invention.

[0025] FIG. 4 is an enlarged view of a laser-based chuck heating device according to an embodiment of the present invention.

[0026] FIG. 5 is an enlarged view of a laser-based chuck heating device according to an embodiment of the present invention.

[0027] Figure 6 is a configuration diagram of a laser-based chuck heating device according to an embodiment of the present invention.

[0028] FIG. 7 is a schematic diagram of a laser-based chuck heating device according to an embodiment of the present invention.

[0029] FIG. 8 is a schematic diagram of a laser-based chuck heating device according to an embodiment of the present invention.

[0030] FIG. 9 is a flowchart of a laser-based chuck heating method according to an embodiment of the present invention.

[0031] Figure 10 is a flowchart specifically illustrating step S20 of Figure 9.

[0032] Figure 11 is a diagram showing the optical properties (absorption, reflection, and transmission spectra) of Si material according to wavelength.

[0033] Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the contents described in the attached drawings. However, the present invention is not limited or restricted by the exemplary embodiments. Unless otherwise defined, all terms (including technical and scientific terms) used herein shall have meanings commonly understood by those of ordinary skill in the art to which the present invention pertains. However, this may vary depending on the intentions of those skilled in the art, precedents, the emergence of new technologies, etc.

[0034] Additionally, terms defined in commonly used dictionaries should not be interpreted ideally or excessively unless explicitly and specifically defined otherwise. In certain cases, terms may be arbitrarily selected by the applicant, in which case their meanings will be described in detail in the relevant description. Therefore, the terms used in the present invention should be defined based on their meaning and the overall content of the present invention, rather than simply their names.

[0035] Throughout this specification, when a part is said to "include" a certain component, this does not mean that other components may be included, but rather that other components may be excluded, unless specifically stated otherwise. Furthermore, the singular forms used herein also include plural forms unless specifically stated otherwise. Furthermore, the expression "at least one of a, b, and / or c" used throughout this specification can encompass "a alone," "b alone," "c alone," "a and b," "a and c," "b and c," or "all of a, b, and c."

[0036] Meanwhile, terms such as "first and / or second" used in this specification may be used to describe various components, but are only used to distinguish one component from another and are not intended to be limited to the components referred to by those terms. For example, without departing from the scope of the present invention, the first component may be referred to as the second component, and the second component may also be referred to as the first component.

[0037] In addition, terms such as “unit”, “module”, etc. described in this specification mean a unit that processes at least one function or operation, which may be implemented by hardware or software, or a combination of hardware and software. In addition, embodiments of the present invention in this specification may be represented by functional block configurations and various processing steps. These functional blocks may be implemented by various numbers of hardware and / or software configurations that execute specific functions. For example, embodiments of the present invention may employ direct circuit configurations such as memory, processing, logic, look-up tables, etc. that may execute various functions under the control of one or more microprocessors or other control devices.

[0038] Hereinafter, various embodiments of the present invention will be described in detail with reference to the accompanying drawings. In describing the embodiments, descriptions of technical details that are well known in the technical field to which the present invention pertains and are not directly related to the present invention will be omitted. This is to convey the gist of the present invention more clearly without obscuring unnecessary explanation. For the same reason, some components in the accompanying drawings are exaggerated, omitted, or schematically depicted. Furthermore, the size of each component does not entirely reflect the actual size. Throughout this specification, the same reference numerals may refer to the same or corresponding components.

[0039] FIG. 1 is a schematic diagram of a laser-based chuck heating device according to an embodiment of the present invention.

[0040] FIG. 2 is a schematic plan view of a laser-based chuck heating device according to an embodiment of the present invention.

[0041] Referring to FIGS. 1 and 2, a laser-based chuck heating device (100) according to an embodiment of the present invention may include a support chuck (50) that supports a substrate (S) and a chuck temperature control device (60) that irradiates laser light (L) to the support chuck (50) to control the temperature of the support chuck (50) and the substrate (S).

[0042] The support chuck (50) may include a chuck plate (10), a light absorbing portion (30), and a thermal interface layer (20). The support chuck (50) may further include an anti-reflection layer (40).

[0043] The chuck plate (10) is provided to support a substrate (S) to be processed by a substrate processing device. The substrate processing device may be, for example, a device that performs a plasma process, a package process, a reflow process, an etching process, a deposition process, a photo process, or a heat treatment process, but is not limited thereto. The substrate (S) may be, for example, a semiconductor wafer, a mask, a glass substrate, or a liquid crystal display (LCD) panel, but is not limited thereto.

[0044] The heat transfer medium layer (20) is disposed between the chuck plate (10) and the light absorbing portion (30) to transfer heat from the light absorbing portion (30) to the chuck plate (10). The heat transfer medium layer (20) may include a material having a higher thermal conductivity than the light absorbing portion (30). The heat transfer medium layer (20) may include a material having a higher thermal conductivity than the chuck plate (10). The heat transfer medium layer (20) may include at least one of a metal material, for example, copper (Cu), silver (Ag), aluminum (Al), zinc (Zn), and nickel (Ni). The heat transfer medium layer (20) may also serve to adhere the chuck plate (10) and the light absorbing portion (30) to each other. Meanwhile, the heat transfer medium layer (20) may further improve the light absorption rate to the light absorbing portion (30) by including a material having a high reflectivity for laser light.

[0045] The heat transfer medium layer (20) may include a first layer (22) in contact with the chuck plate (10) and a second layer (24) in contact with the light absorbing portion (30). The first layer (22) may be disposed, for example, on a surface (bottom) opposite to a surface (upper surface) on which the substrate (S) of the chuck plate (10) is provided. The second layer (24) may be disposed on a surface (upper surface) of the light absorbing portion (30) facing the chuck plate (10). The first layer (22) and the second layer (24) may be formed, for example, by a metal plating method. In this case, the first layer (22) and the second layer (24) may be formed based on different seed layers on the chuck plate (10) and the light absorbing portion (30), respectively. The first layer (22) and the second layer (24) can be bonded to each other by hybrid bonding, such as copper to copper bonding, for example. Meanwhile, the heat transfer medium layer (20) can also be formed by applying metal paste to the chuck plate (10) and the light absorbing portion (30), bonding them together, and then performing a heat curing treatment.

[0046] The heat transfer medium layer (20) ideally contains copper (Cu) for the following reasons. Copper has high thermal conductivity that enables rapid heat transfer in a high-temperature light absorbing material. In addition, copper has the ease of a process that allows it to be easily plated on the chuck plate (10) and the light absorbing portion (30). In addition, copper can facilitate bonding of each layer (22, 24) due to its diffusion property. Meanwhile, copper has the property of reflecting incident near-infrared laser light. In order to secure a distance at which the incident laser light is absorbed according to the Beer-Lambert law, the light absorbing portion (30) needs to be thicker than a certain thickness, but the thickness of the light absorbing portion (30) can be reduced by utilizing the reflective property of copper. This enables it to cope with warpage that takes into account the difference in thermal expansion rates between silicon, a light absorbing material, and copper in a high-temperature environment. In other words, the thinner the silicon layer, the more flexible the warpage response is, and the less risk of damage to the substrate can be minimized.

[0047] The light absorbing portion (30) may include a light absorbing material that absorbs laser light (L) irradiated by the chuck temperature control device (60). The light absorbing portion (30) may be provided in one or more pieces. The light absorbing portion (30) may be attached to the chuck plate (10) by a heat transfer medium layer (20). In another embodiment, the light absorbing portion (30) may be embedded in the chuck plate (10) (see FIG. 8). The light absorbing portion (30) may be made of a semiconductor material such as, for example, silicon (Si), germanium (Ge), or silicon germanium (SiGe), but is not limited thereto.

[0048] The light absorbing portion (30) may be arranged in a concentric circle form with the chuck plate (10) as the center, as illustrated in FIGS. 1 and 2. For example, the light absorbing portion (30) may include inner light absorbing portions (30A) in a first region (inner region) and outer light absorbing portions (30B) in a second region (outer region). The second region may be positioned closer to the edge of the chuck plate (10) than the first region. The inner light absorbing portions (30A) and the outer light absorbing portions (30B) may be arranged in multiples. In the drawing, the inner light absorbing portions (30A) are illustrated as six, and the outer light absorbing portions (30B) are illustrated as twelve, but this is merely exemplary, and the number of light absorbing portions (30) may be variously modified according to embodiments. Additionally, the arrangement of the light absorbing portions (30A, 30B) can be varied in various ways depending on the embodiments.

[0049] Meanwhile, the light absorbing portion (30) may have a disk shape, but its shape may be modified in various ways depending on the embodiments. For example, the light absorbing portion (30) may have a shape such as a rectangular parallelepiped, a cylinder, a truncated cone, or a cylinder having a concave or convex lower surface.

[0050] In an embodiment of the present invention, different powers may be supplied to the inner light absorbing portion (30A) and the outer light absorbing portion (30B). For example, the first light source device (65A) facing the inner light absorbing portion (30A) may be supplied with less power than the second light source device (65B) facing the outer light absorbing portion (30B). Conversely, the first light source device (65A) may be supplied with more power than the second light source device (65B). By controlling the light energy of the laser irradiated to the inner and outer regions of the chuck plate (10), the temperature of the chuck plate (10) can be efficiently controlled. In addition, the light energy of the laser irradiated to the light absorbing portions (30) attached to the chuck plate (10) can be individually controlled by the chuck temperature control device (60).

[0051] An anti-reflection layer (40) may be placed beneath the light absorbing portion (30). The anti-reflection layer (40) can prevent laser light irradiated toward the light absorbing portion (30) from being reflected, interfered with, or scattered on the surface. Accordingly, light transmittance to the light absorbing portion (30) can be improved.

[0052] A chuck temperature control device (60) can irradiate a laser having a wavelength set according to the maximum light absorption rate of the light absorbing material included in the light absorbing part (30) to the light absorbing part (30). The chuck temperature control device (60) can control the temperature of the chuck plate (10) by having the light energy of the laser absorbed by the light absorbing material of the light absorbing part (30).

[0053] The chuck temperature control device (60) may include a light source control device (62A, 62B) and a light source device (65A, 65B). The light source control device (62A, 62B) may supply power to the light source device (65A, 65B) when heating of the support chuck (50) is required. Accordingly, the light source device (65A, 65B) may irradiate laser light (L) to the support chuck (50). The first light source control device (62A) may supply power to the first light source device (65A), and the first light source device (65A) may irradiate laser light (L) to the inner light absorbing portion (30A). The second light source control device (62B) can supply power to the second light source device (65B), and the second light source device (65B) can supply power to the outer light absorbing portion (30B). The light source devices (65A, 65B) can be arranged in multiple numbers, and each can irradiate laser light to the corresponding light absorbing portion (30).

[0054] Fig. 3 is an enlarged view of a laser-based chuck heating device according to an embodiment of the present invention. Fig. 3 enlarges and illustrates an area corresponding to area 'A' of Fig. 2.

[0055] Referring to FIG. 3, the chuck plate (10) of the laser-based chuck heating device (100A) may include portions (10a, 10b) having different thicknesses depending on the area, and the heat transfer medium layer (20) may include portions having different thicknesses depending on the area.

[0056] When heat is transferred from the light absorbing portion (30) to the chuck plate (10), the temperature of the central region and the temperature of the edge region may be heated differently. This occurs because the degree of surface exposure of the chuck plate (10) varies depending on the region. For example, the temperature rise may be relatively higher in the central region than in the edge region.

[0057] According to an embodiment of the present invention, in order to improve heat transfer efficiency in the edge region, the thickness (T1) of the heat transfer medium layer (20) in the edge region can be designed to be thicker than the thickness (T2) of the heat transfer medium layer (20) in the central region. Meanwhile, in the chuck plate (10), the thickness in the central region can be designed to be thicker than the thickness in the edge region. Through this, uniform temperature control from the light absorbing portion (30) to the chuck plate (10) is possible, and the temperature gradient of the chuck plate (10) can be controlled.

[0058] According to an embodiment of the present invention, a convex portion (10a) and a concave portion (10b) may be provided on the lower surface of the chuck plate (10) for thickness control. The convex portions (10a) and the concave portions (10b) may be alternately arranged, and the height, width, and the like may be variously modified according to embodiments. Correspondingly, a convex portion (20a) and a concave portion (20b) may be provided on the upper surface of the heat transfer medium layer (20). The convex portion (20a) of the heat transfer medium layer (20) may be in contact with the concave portion (10b) of the chuck plate (10), and the concave portion (20b) of the heat transfer medium layer (20) may be in contact with the convex portion (10a) of the chuck plate (10).

[0059] Meanwhile, in order to control the temperature gradient for each area of ​​the chuck plate (10), the temperature gradient of the surface of the chuck plate (10) can be controlled by controlling the size or temperature of the light absorbing portion (30), which is a heat source.

[0060] However, what is shown in FIG. 3 is an example of the present invention and is not limited thereto, and the arrangement of parts having different thicknesses of the chuck plate (10) or the heat transfer medium layer (20) can be varied. For example, the chuck plate (10) may be designed so that the thickness gradually decreases or increases from the central region of the laser being irradiated to the peripheral region of the central region.

[0061] Fig. 4 is an enlarged view of a laser-based chuck heating device according to an embodiment of the present invention. Fig. 4 enlarges and illustrates an area corresponding to area 'A' of Fig. 2.

[0062] Referring to FIG. 4, in a laser-based chuck heating device (100B) according to an embodiment of the present invention, a pipe (28) through which a coolant can flow may be provided within a heat transfer medium layer (20). At least a portion of the cooling pipe (28) may be embedded in a convex portion (20a) of the heat transfer medium layer (20). The coolant introduced into the cooling pipe (28) may absorb heat from the chuck plate (10) and lower the temperature of the chuck plate (10). The coolant may be injected into the pipe (28) in the form of a liquid or gas.

[0063] In a substrate processing process, there are cases where fine temperature control or cooling of a chuck plate (10) or substrate (S) is required. According to an embodiment of the present invention, cooling of a support chuck (50) can be efficiently performed by forming a coolant path within a heat transfer medium layer (20) having relatively high thermal conductivity. In addition, rapid temperature control of the support chuck (50) is also possible.

[0064] Meanwhile, according to an embodiment of the present invention, a chuck plate (10) is divided into a predetermined zone, and the flow of refrigerant, etc. is controlled for each zone by a refrigerant control unit, thereby enabling fine temperature adjustment for each zone.

[0065] Additionally, the structure in which the cooling pipe (28) is embedded can be applied to other embodiments of the present invention. For example, the cooling pipe (28) can also be provided in the heat transfer medium layer (20) of the laser-based chuck heating device of FIG. 1, FIG. 7, or FIG. 8.

[0066] Fig. 5 is an enlarged view of a laser-based chuck heating device according to an embodiment of the present invention. Fig. 5 enlarges and illustrates an area corresponding to area 'B' of Fig. 2.

[0067] Referring to FIG. 5, the light absorbing portion (30) of the laser-based chuck heating device (100C) according to an embodiment of the present invention may have textured surfaces (30c1, 30c2). The upper surface (30c1) of the light absorbing portion (30) in contact with the heat transfer medium layer (20) may have an uneven portion. The lower surface (30c2) of the light absorbing portion (30) in contact with the anti-reflection layer (40) may have an uneven portion. The light absorption rate of the light absorbing portion (30) may be improved by the uneven portion. The surface of the second layer (24) of the heat transfer medium layer (20) corresponding to the upper surface (30c1) may also have an uneven portion. The surface of the anti-reflection layer (40) corresponding to the lower surface (30c2) may also have an uneven portion.

[0068] The textured surface structure of the light absorbing portion (30) can also be applied to other embodiments of the present invention. For example, the textured surface structure can also be provided on the light absorbing portion (30) of the laser-based chuck heating device of FIGS. 3 and 4.

[0069] Figure 6 is a configuration diagram of a laser-based chuck heating device according to an embodiment of the present invention.

[0070] Referring to FIG. 6, a laser-based chuck heating device (100) according to an embodiment of the present invention may include a laser control unit (2), a laser wavelength determination unit (3), a laser output direction control unit (4), a chuck temperature control unit (5), a light absorption control unit (6), and a coolant control unit (7).

[0071] The laser control unit (2), the laser wavelength determination unit (3), the laser output direction control unit (4), the chuck temperature control unit (5), the light absorption control unit (6), and the coolant control unit (7) can perform a process for controlling the temperature of the chuck by executing a program (algorithm) stored in the memory by the control unit (1) including at least one processor.

[0072] The laser control unit (2) can control the wavelength and intensity of the laser irradiated from the laser-based chuck heating device according to the process recipe of the processing unit. Based on the direction of the laser irradiation, the thickness of the light absorbing unit (30) can be designed to have the maximum light absorption rate according to the light absorption characteristics of the light absorbing material.

[0073] The laser wavelength determination unit (3) can generate an optical absorption spectrum indicating the optical absorption rate according to the wavelength of the laser light for a light-absorbing material. The laser wavelength determination unit (3) can determine the wavelength of the laser based on the optical absorption rate peak wavelength indicating the maximum optical absorption rate in the optical absorption spectrum.

[0074] The laser output direction control unit (4) can control the direction of the laser so that the laser is irradiated to an area of ​​the support chuck (50) that requires temperature control by the laser according to the temperature distribution of the support chuck (50). The laser output direction control unit (4) can include a means for controlling the direction of the laser generating device of the chuck temperature control unit (5), for example, a driving cylinder or a driving motor.

[0075] The chuck temperature control unit (5) can control the chuck temperature control device (see '60' in FIG. 1). The chuck temperature control unit (5) can control the output of laser light irradiated to each light absorbing unit (30) according to the arrangement of the light absorbing units (30). For example, the chuck temperature control unit (5) can supply a first power to a light absorbing unit in a predetermined area, and supply a second power different from the first power to a light absorbing unit in another predetermined area. In addition, the chuck temperature control unit (5) can include a wavelength-tunable laser (variable frequency laser). The wavelength-tunable laser can output light by adjusting the wavelength of the laser according to the target temperature for the support chuck (30).

[0076] The light absorption control unit (6) can control the light energy of the laser absorbed by the light absorption unit (30) and the area of ​​the light absorption region by adjusting the distance between the support chuck (50) and the laser generating device of the chuck temperature control unit (5) according to the target temperature for the support chuck (50) and the area of ​​the region in which a temperature change is required among the support chuck (50).

[0077] The refrigerant control unit (7) can supply refrigerant to the refrigerant pipe (see '28' in Fig. 4) provided in the support chuck (50) when it is necessary to lower the target temperature for the support chuck (50) and the temperature in the support chuck (50). In addition, the refrigerant control unit (6) can control the flow rate of refrigerant flowing in each zone of the support chuck (50), the type of refrigerant, the timing of refrigerant inflow and outflow, etc.

[0078] A substrate processing device according to an embodiment of the present invention may include the above-described laser-based chuck heating device (100) and a processing unit that performs processing on a substrate (S) within a chamber (not shown). The chamber has a processing space within which the substrate (S) is processed. Various components required for processing the substrate (S) may be provided within the chamber depending on the type of substrate processing process performed in the substrate processing device.

[0079] For example, when a substrate processing device is provided as a device for processing a substrate using plasma, a configuration for providing process gas for plasma generation to a processing space of a chamber, a configuration for converting the process gas into plasma (e.g., a high-frequency generator, etc.), a component for exhausting the process gas and plasma inside the processing space, etc. may be provided.

[0080] The support chuck (50) corresponds to a support provided to support the substrate (S), and may be provided as an electrostatic chuck for supporting the lower surface (bottom surface) of the substrate (S), but is not limited thereto. A guide ring (or edge ring) may be provided around the support chuck (50) to guide the substrate (S). The support chuck (50) may be insulated by an insulator.

[0081] An exhaust ring may be provided within the chamber for uniform exhaust of process gas. The processing unit is configured to perform the substrate processing process described above on the substrate (S), and may include, for example, a high-frequency generator for plasma generation and control, a high-frequency controller, and a heater for heating the substrate (S).

[0082] FIG. 7 is a schematic diagram of a laser-based chuck heating device according to an embodiment of the present invention.

[0083] Referring to FIG. 7, in a laser-based chuck heating device (100D) according to an embodiment of the present invention, one light absorbing portion (30) may be provided under the chuck plate (10). The light absorbing portion (30) may have the same width as the chuck plate (10) or a similar width. The light absorbing portion (30) may transfer heat to the chuck plate (10) through a wider area, and the heat transfer medium layer (20) disposed therebetween may transfer heat efficiently and uniformly.

[0084] FIG. 8 is a schematic diagram of a laser-based chuck heating device according to an embodiment of the present invention.

[0085] Referring to FIG. 8, in a laser-based chuck heating device (100E) according to an embodiment of the present invention, a light absorbing portion (30) and a heat transfer medium layer (20) may be embedded within a chuck plate (10). In this case, at least the upper surface and side surfaces of the light absorbing portion (30) of the heat transfer medium layer (20) may be surrounded. The heat transfer medium layer (20) may increase the contact area between the chuck plate (10) and the light absorbing portion (30), thereby enabling efficient and uniform heat transfer. Although not illustrated, an anti-reflection layer may be provided beneath the light absorbing portion (30).

[0086] Fig. 9 is a flowchart of a laser-based chuck heating method according to an embodiment of the present invention. Referring to Figs. 1 to 9, the laser-based chuck heating method according to an embodiment of the present invention includes a step (S10) of preparing a support chuck (50) having a light absorbing portion (30) including a light absorbing material that absorbs laser light, and a step (S20) of controlling the temperature of the support chuck (50) by irradiating the light absorbing portion (30) with a laser having a wavelength set according to the maximum light absorption rate of the light absorbing material by a chuck temperature control device (60) so that the light energy of the laser is absorbed by the light absorbing material.

[0087] FIG. 10 is a flowchart specifically illustrating step S20 of FIG. 9. Referring to FIG. 9 and FIG. 10, a laser-based chuck heating method according to an embodiment of the present invention may include a step (S22) of generating an optical absorption spectrum representing optical absorption rate according to the wavelength of laser light for a light-absorbing material by a laser wavelength determination unit, and a step (S24) of determining the wavelength of the laser based on an optical absorption rate peak wavelength representing the maximum optical absorption rate in the optical absorption spectrum.

[0088] As described above, the laser-based chuck heating device and chuck heating method according to the embodiment of the present invention generate heat by allowing the optical energy of the laser to be absorbed by the light-absorbing material of the chuck. A wavelength that is easily absorbed by the light-absorbing material and a light-absorbing material that can increase the absorption rate can be selected. Accordingly, the optical energy incident on the support chuck can be efficiently absorbed as a heat source. The temperature of the support chuck is controlled by the absorbed laser heat source, and the temperature of the substrate (wafer) can be controlled through the temperature control of the support chuck.

[0089] According to an embodiment of the present invention, the heating and cooling of the chuck can be quickly adjusted by a laser, enabling easy chuck temperature control. The laser-based chuck heating device and chuck heating method according to an embodiment of the present invention can heat and cool the temperature of the material by irradiating the optical energy of the laser onto the target material and utilizing the characteristics of the material's light-absorbing substance.

[0090] Figure 11 is a diagram showing the optical properties (absorption, reflection, and transmission spectra) of Si material according to wavelength. In Figure 9, the solid line represents the absorption spectrum of Si material, the long-spaced dotted line represents the reflection spectrum of Si material, and the short-spaced dotted line represents the transmission spectrum of Si material.

[0091] By incorporating a light-absorbing material whose temperature is controlled by a laser as a component of the support chuck, the temperature of the chuck can be effectively and efficiently controlled. The chuck temperature can be effectively controlled depending on the laser wavelength and intensity, the light-absorbing material, and its thickness. Silicon has the characteristic of having the highest absorption rate at a wavelength of 980 nm.

[0092] Looking at the optical properties of Si materials, when irradiated with wavelengths in the 200-2000 nm range, laser light propagates in the form of absorption, reflection, and transmission. The energy absorbed is absorbed as heat energy, and the temperature of Si increases due to the absorbed heat energy. It has been confirmed that Si materials have the highest absorption rate at a wavelength in the 980 nm range. Si materials exhibit an absorption rate of over 60% in the 700-1000 nm range, enabling efficient light absorption and heat energy conversion using these wavelengths.

[0093] Considering that absorption decreases exponentially with the thickness of the light-absorbing material, an appropriate absorption thickness can be calculated based on the absorption characteristics of the light-absorbing material. While 980 nm was considered the optimal wavelength for absorption in Si materials, the laser wavelength can be selected within the range of 700 nm to 1500 nm.

[0094] Light-absorbing materials can be selected not only from silicon (Si), but also from various dielectrics, metals, and crystals. The degree of light absorption is determined by the wavelength of the incident laser, the amount of absorption by the absorbing material, and the intensity of the laser source. Depending on the intensity of the laser source, a temperature increase of more than 100°C per second is possible.

[0095] For example, when selecting a chuck heating structure for Si, the structure can be constructed with an upper layer of dielectric or metal on which to place the wafer, a lower layer of material that heats the wafer using laser irradiation, and a middle layer of metal that bonds the structures on both sides and transfers heat. The materials and structures of each of the upper, middle, and lower layers efficiently convert the laser light source into heat, which is then transferred to the wafer. If necessary, the upper and middle layers can be manufactured from the same material.

[0096] When placing a 300mm wafer on a chuck, it is possible to integrate multiple light sources to irradiate the lower portion of the chuck to adjust the size and intensity of the laser light source. The light-absorbing materials can be divided into one, seven, or more, and the sizes of the light-absorbing materials can be selected and attached to the lower portion of the chuck. The example of Fig. 2 described above shows a total of 18 light-absorbing parts attached. In the illustrated example, multiple light sources are provided, and laser light from each light source is irradiated to each light absorption.

[0097] The material's light absorption properties also allow for direct heating of Si wafers within the chamber. This can be achieved by irradiating the wafer with a laser source located above the chuck within the chamber, allowing direct absorption. However, direct substrate absorption requires separation of the light source and chamber via window glass, as the laser is irradiated within the process chamber. Furthermore, measures are needed to prevent device pattern absorption interference and laser-induced pattern damage on the Si wafer.

[0098] There are two main purposes of using a laser to control chuck temperature. First, it induces rapid temperature adjustments, enabling selective deposition or removal of substrate film on the chuck top. Second, it saves energy by stopping unnecessary heating during the waiting time of the film removal process using chuck heating.

[0099] Some semiconductor processes require in-situ temperature control, such as cleaning or atomic layer etching / deposition. Conventionally, to create a high-temperature environment, a separate temperature-raising device was built within the chamber, or a chamber with a separate high-temperature chuck was constructed. Separate temperature-raising devices attempted to control the temperature of the film on the wafer by adjusting the showerhead position or configuring a separate lamp within the chamber. Laser-based chuck temperature control devices irradiate the laser from the underside of the chuck, outside the chamber, rather than within the chamber where various chemical reactions occur. Furthermore, the degree of temperature rise and fall can be adjusted by optically adjusting the laser intensity, enabling detailed process control.

[0100] Semiconductor equipment consumes significant power. Along with RF, vacuum pumps, air conditioning, and control systems, chuck heating also consumes significant power. In the case of RF, plasma generation is unnecessary during equipment standby, significantly reducing standby power consumption. Conversely, conventional chuck heating methods rely on heat exchangers or heating elements for temperature control, which necessitates constant power consumption for stability reasons. This is due to the extremely low heat exchange rate of the heat source, which can take several minutes to several tens of minutes to adjust from room temperature to the desired temperature. Using lasers eliminates standby power consumption and rapidly adjusts the temperature to the required process temperature during process transitions, significantly reducing equipment power consumption.

[0101] The detailed description above is illustrative of the present invention. Furthermore, the foregoing description illustrates preferred embodiments of the present invention, and the present invention can be used in various other combinations, modifications, and environments. In other words, changes or modifications may be made within the scope of the inventive concepts disclosed herein, the scope equivalent to the written disclosure, and / or the scope of technology or knowledge in the art. The written embodiments illustrate the best possible state for implementing the technical idea of ​​the present invention, and various modifications required for specific applications and uses of the present invention are also possible. Therefore, the detailed description of the invention above is not intended to limit the present invention to the disclosed embodiments. Furthermore, the appended claims should be construed to include other embodiments.

Claims

1. A support chuck including a chuck plate supporting a substrate, a light absorbing portion including a light absorbing material that absorbs laser light, and a thermal interface layer disposed between the chuck plate and the light absorbing portion; and A laser-based chuck heating device, comprising a chuck temperature control device that controls the temperature of the support chuck by irradiating the light-absorbing portion with a laser having a wavelength set according to the maximum light absorption rate of the light-absorbing material and absorbing the light energy of the laser into the light-absorbing material.

2. In paragraph 1, A laser-based chuck heating device, wherein the heat transfer medium layer comprises a material having a higher thermal conductivity than the light absorbing portion.

3. In paragraph 1, A laser-based chuck heating device, wherein the heat transfer medium layer comprises a first layer in contact with the chuck plate and a second layer in contact with the light absorbing portion.

4. In paragraph 3, A laser-based chuck heating device, wherein the first layer and the second layer are bonded to each other by copper to copper bonding.

5. In paragraph 1, A laser-based chuck heating device, wherein the heat transfer medium layer includes a refrigerant pipe through which a refrigerant flows.

6. In paragraph 1, A laser-based chuck heating device, wherein the heat transfer medium layer includes a region having a first thickness and a region having a second thickness smaller than the first thickness.

7. In paragraph 1, A laser-based chuck heating device, wherein the light absorbing portion has a textured surface.

8. In paragraph 1, A laser-based chuck heating device, wherein the support chuck further includes an anti-reflection layer disposed below the light absorbing portion.

9. In paragraph 1, A laser-based chuck heating device, wherein the wavelength of the laser is set according to a maximum light absorption rate of 60% or more of the light-absorbing material within a wavelength range of 700 nm to 1500 nm.

10. A substrate processing device comprising a laser-based chuck heating device according to any one of claims 1 to 9, and a processing unit that performs processing on the substrate within a chamber.

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