Substrate liquid processing device, substrate liquid processing method, and computer-readable recording medium

Abstract

This substrate liquid processing device comprises: a substrate support part; a first electrode which is electrically connected to a substrate supported by the substrate support part; a cover which faces the substrate, a plating solution being filled in between the cover and the substrate; and a second electrode which is positioned between the substrate and the cover and which has a polarity different from that of the first electrode. A part of the cover that faces the substrate includes a first cover section and a second cover section which is configured so that the gap from the second electrode is smaller than that of the first cover section.

Description

Substrate liquid processing apparatus, substrate liquid processing method, and computer-readable recording medium

[0001] The present disclosure relates to a substrate liquid processing apparatus, a substrate liquid processing method, and a computer-readable recording medium.

[0002] Patent Document 1 discloses a liquid processing apparatus that supplies a plating solution onto a processing surface of a substrate and applies electricity to the plating solution so that a desired electric field acts on the plating solution, thereby depositing a plating film on the processing surface.

[0003] In plating processing devices, the thickness (plating film thickness) of the plating film formed on the processing surface of a substrate generally changes depending on the amount of current passed through it, but it is not always easy to locally adjust the thickness of the plating film deposited on a partial area of ​​the processing surface.

[0004] Japanese Patent Application Laid-Open No. 2003-286598

[0005] The present disclosure provides an advantageous technique for locally adjusting the thickness of a plating film formed on a substrate.

[0006] One aspect of the present disclosure relates to a substrate liquid processing apparatus comprising a substrate support portion, a first electrode electrically connected to a substrate supported by the substrate support portion, a cover body facing the substrate and having a plating solution filled between the substrate and the cover body, and a second electrode positioned between the substrate and the cover body and having a polarity different from that of the first electrode, wherein the portion of the cover body facing the substrate includes the first cover portion and a second cover portion whose distance from the second electrode is smaller than that of the first cover portion.

[0007] The present disclosure is advantageous for partially adjusting the thickness of a plating film formed on a substrate.

[0008] FIG. 1 is a diagram showing a schematic configuration of an example of a substrate solution processing apparatus according to a first embodiment. FIG. 2 is a diagram showing the anode shown in FIG. 1 from below. FIG. 3 is a side view showing an example of an anode connection configuration. FIG. 4 is a diagram showing an example of electric field lines emanating from an anode when the distance between the anode and the cover (anode-cover distance) D is relatively large. FIG. 5 is a diagram showing an example of electric field lines emanating from an anode when the anode-cover distance is relatively small. FIG. 6 is a flowchart showing the flow of an example of a substrate solution processing method (plating method). FIG. 7 is a diagram showing a schematic configuration of an example of a substrate solution processing apparatus according to a second embodiment. FIG. 8 is a graph showing an example of the relationship between "substrate radial position" (X-axis) and "plating film thickness" (Y-axis) when the anode-cover distance is constant over the entire portion of the cover facing the substrate (see FIG. 1). FIG. 9 is a graph showing an example of the relationship between "substrate radial position" (X-axis) and "plating film thickness" (Y-axis) when a plating film is formed on a substrate using the substrate solution processing apparatus shown in FIG. 7. FIG. 10 is a diagram showing a schematic configuration of an example of a substrate liquid processing apparatus according to the third embodiment. FIG. 11 is a graph showing an example of the relationship between "substrate radial position" (X-axis) and "plating film thickness" (Y-axis) when the anode-cover distance is constant over the entire portion of the cover facing the substrate (see FIG. 1). FIG. 12 is a graph showing an example of the relationship between "substrate radial position" (X-axis) and "plating film thickness" (Y-axis) when a plating film is formed on a substrate by the substrate liquid processing apparatus shown in FIG. 10. FIG. 13 is a diagram showing a schematic configuration of an example of a substrate liquid processing apparatus according to the fourth embodiment. FIG. 14A is a diagram showing a schematic configuration of an example of a substrate liquid processing apparatus according to the fifth embodiment. FIG. 14B is a diagram showing a schematic configuration of another example of a substrate liquid processing apparatus according to the fifth embodiment. FIG. 15A is a diagram showing a schematic configuration of another example of a substrate liquid processing apparatus according to the fifth embodiment. FIG. 15B is a diagram showing a schematic configuration of another example of a substrate liquid processing apparatus according to the fifth embodiment. FIG. 16 is a diagram showing a schematic configuration of an example of a substrate liquid processing apparatus according to the sixth embodiment. Fig. 17 is a diagram showing an example of an image of electric lines of force emanating from the anode (particularly the portion covered with the insulating member) of the substrate liquid processing apparatus shown in Fig. 16. Fig. 18 is a plan view showing an example of a connection mode between the substrate and the cathode.Fig. 19 is a plan view showing an example of a cover body used in the plating process of the substrate shown in Fig. 18. Fig. 20 is a plan view illustrating a chip portion formed on a substrate (wafer) W. Fig. 21 is a plan view showing an example of a cover body used in the plating process of the substrate shown in Fig. 20.

[0009] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. For ease of understanding, the device configurations shown in the drawings (e.g., the shape and size of each element, and the size ratio between elements) are at least partially represented schematically and do not necessarily correspond to the actual device configurations.

[0010] [First Embodiment] Fig. 1 is a diagram showing an outline of the apparatus configuration of an example of a substrate liquid processing apparatus 10 according to a first embodiment. Fig. 2 is a diagram showing the anode 13 shown in Fig. 1 as viewed from below. Fig. 3 is a side view showing an example of the connection configuration of the anode 13. Fig. 4 is a diagram showing an example of an image of electric field lines E emanating from the anode 13 when the distance D between the anode 13 and the cover body 14 (anode-cover distance) is relatively large. Fig. 5 is a diagram showing an example of an image of electric field lines E emanating from the anode 13 when the anode-cover distance D is relatively small.

[0011] The substrate liquid processing apparatus 10 shown in FIG. 1 includes a substrate support portion 11, a cathode (first electrode) 12, an anode (second electrode) 13, and a cover (top plate) 14.

[0012] The substrate support 11 detachably supports a substrate W such as a wafer. The substrate support 11, together with the substrate W it holds, is rotatable about a vertical axis and movable along the vertical axis (up and down in FIG. 1 ) by a substrate support drive unit 21 driven under the control of a control device 60.

[0013] The cathode 12 is electrically connected to a power supply 26 via an electric wire 27, and is also electrically connected to a substrate W supported by a substrate support 11. In the example shown in FIG. 1 , the cathode 12 is attached to the substrate support 11 and connected to an edge portion of the substrate W, but the cathode 12 can be installed in any configuration. When the substrate W is connected to the cathode 12, the entire substrate W electrically functions as a cathode. In the following description, a member simply referred to as a "cathode" may include not only the cathode 12 but also the substrate W, and the expression "between electrodes" may mean the space between the anode 13 and the substrate W.

[0014] The cover body 14 has a plate-like shape extending horizontally and faces the substrate W (particularly, the processing surface on which the seed layer S is formed). The cover body 14 shown in FIG. 1 has a plating solution discharge portion (plating solution application portion) 22 formed as a through-hole in its center. The plating solution discharge portion 22 is connected to a plating solution supply portion 29 via a solution supply line 30 and discharges the plating solution L supplied downward via the solution supply line 30 from the plating solution supply portion 29, which is driven under the control of the control device 60. The plating solution L is discharged from the plating solution discharge portion 22 toward the anode 13 and the processing surface (seed layer S) of the substrate W, filling the space between the cover body 14 and the substrate W with the plating solution L to form a film (layer) of the plating solution L. In this way, the plating solution discharge portion 22 functions as a plating solution application portion that applies the plating solution L to the central portion of the substrate W.

[0015] The composition of the plating solution L is not limited, and the plating solution L contains a substance (metal such as copper) to be deposited as a plating film.

[0016] A cover drive unit 24 is attached to the cover body 14, and the cover body 14 is reciprocated in a vertical direction (up and down in FIG. 1 ) by the cover drive unit 24. The specific configuration of the cover drive unit 24 is not limited, and the cover drive unit 24 can be configured using a known mechanism, so a detailed description of the configuration of the cover drive unit 24 will be omitted.

[0017] The anode 13 is located between the substrate W (particularly the processing surface on which the seed layer S is formed) and the cover body 14, is electrically connected to a power source 26, and has a polarity different from that of the cathode 12. The anode 13 in this embodiment has a plate-like (particularly mesh-like) shape that extends horizontally and has a plurality of through-holes, and faces the substrate W (particularly the processing surface on which the seed layer S is formed) supported by the substrate support part 11, and a plating solution L is filled between the anode 13 and the substrate W.

[0018] The specific configuration of the anode 13 is not limited. The anode 13 in the example shown in FIG. 2 includes multiple (four) ring-shaped portions arranged concentrically. In the anode 13 shown in FIG. 2, anode holes 13A are formed between adjacent ring-shaped portions in the radial direction, penetrating the anode 13. A plating solution inlet 13B is formed at the center of the innermost ring-shaped portion, penetrating the anode 13. In FIG. 2, the cover 14 located behind the anode 13 can be seen through the anode holes 13A. The plating solution inlet 13B is positioned on the same vertical axis as the plating solution outlet 22 formed in the cover 14, and faces the plating solution inlet 13B in the vertical direction (the up-and-down direction in FIG. 1).

[0019] The anode 13 shown in FIG. 1 is reciprocated in the vertical direction (up and down in FIG. 1 ) by an anode drive unit 23. The anode drive unit 23 in the example shown in FIG. 1 includes an anode drive main body 23A and an anode drive support part 23B that is driven by the anode drive main body 23A to move forward and backward so as to change the amount of protrusion from the anode drive main body 23A in the vertical direction (downward in FIG. 1 ). The anode drive support part 23B extends to penetrate the cover drive unit 24 and the cover body 14, and the anode 13 is fixedly attached to the tip of the anode drive support part 23B located below the cover body 14. The anode 13 is reciprocated in the vertical direction (up and down in FIG. 1 ) in response to the forward and backward movement of the anode drive support part 23B. At least one anode drive support portion 23B is electrically conductive and also functions as an electric wire 27, and the anode 13 is electrically connected to a power source 26 via the at least one anode drive support portion 23B and the electric wire 27.

[0020] The specific configuration of the anode drive unit 23 is not limited, and the anode drive unit 23 can be configured using a known mechanism. For example, as shown in FIG. 3 , each portion of the anode 13 (the ring-shaped portion in the example shown in FIG. 2 ) may be provided with its own variable resistor 37, or each portion of the anode 13 and the variable resistor 37 may be electrically connected to each other via the anode drive support member 23B, which functions as the electric wire 27. The resistance value of each variable resistor 37 thus provided can be changed by the control device 60, making it possible to vary the strength of the electric field between the anode 13 and the substrate W (cathode 12) at each portion of the anode 13. Generally, in plating processing, the thickness of the plating film formed varies depending on the strength of the electric field acting on the plating solution. Therefore, by applying the configuration shown in FIG. 3 (variable resistor 37) to the substrate solution processing apparatus 10 shown in FIG. 1 , it is possible to adjust the thickness of the plating film at each portion of the anode 13.

[0021] 1 further includes an additional nozzle drive unit 34 that is driven under the control of the control device 60, and an additional nozzle 35 that is moved by the additional nozzle drive unit 34. The additional nozzle 35 is connected to a cleaning liquid supply unit (not shown) that is driven under the control of the control device 60, and discharges the cleaning liquid supplied from the cleaning liquid supply unit.

[0022] The substrate solution processing apparatus 10 may include any other elements. For example, when applying pure water or other processing liquid to the substrate W, a processing liquid supply unit (not shown) that stores such processing liquid may be connected to the plating solution discharge unit 22, the additional nozzle 35, and / or other liquid discharge units (not shown).

[0023] The control device 60 is capable of controlling the driving of various optional elements included in the substrate solution processing apparatus 10. The control device 60 in the example shown in Fig. 1 is capable of controlling, for example, the substrate support driving unit 21, the cover driving unit 24, the anode driving unit 23, the power supply 26, the plating solution supply unit 29, and the additional nozzle driving unit 34.

[0024] The cover drive unit 24 and the anode drive unit 23, which are driven under the control of the control device 60, function as a gap adjustment unit that can variably adjust the gap (anode-cover gap D) between the cover body 14 and the anode 13. Because the anode-cover gap D is determined according to the positions of the cover body 14 and the anode 13, the cover drive unit 24, which adjusts the position of the cover body 14, and the anode drive unit 23, which adjusts the position of the anode 13, work together as a gap adjustment unit that adjusts the anode-cover gap D.

[0025] 1 is a so-called face-up type apparatus, in which the processing surface (seed layer S) of the substrate W supported by the substrate support 11 faces upward. The seed layer S forms part of the substrate W and has any composition (e.g., copper) that can promote the growth (precipitation) of a plating metal (e.g., plating copper).

[0026] Then, with the anode 13 brought close to the processing surface of the substrate W and positioned above the processing surface, the plating solution L is supplied from the plating solution discharge unit 22 to between the substrate W and the cover body 14. This causes the plating solution L to fill the space between the substrate W and the cover body 14 (and thus the space between the substrate W and the anode 13). Then, by passing electricity through the plating solution L piled on the processing surface of the substrate W via the cathode 12 and the anode 13, a plating film (plating layer) is deposited on the substrate W (on the seed layer S).

[0027] 1, in addition to the space between the substrate W and the anode 13, a space capable of being filled with plating solution L is also formed between the anode 13 and the cover 14, and the distance between these spaces (anode-cover distance D) is variably adjustable. In particular, in the substrate solution processing apparatus 10 of this embodiment, the anode-cover distance D can be changed to a desired size without changing the distance between the anode 13 and the processing surface (seed layer S) of the substrate W.

[0028] As a result of extensive research, the present inventors have newly discovered that it is possible to adjust the thickness of the plating film deposited on the substrate W by changing the anode-cover distance D. In other words, when conditions other than the anode-cover distance D are the same, the inventors have discovered that the thickness of the plating film formed on the substrate W tends to increase as the anode-cover distance D increases, and the thickness of the plating film tends to decrease as the anode-cover distance D decreases.

[0029] This finding is believed to be due to the fact that increasing the anode-cover distance D results in a stronger electric force acting on the processing surface of the substrate W. That is, when the anode-cover distance D is relatively large as shown in FIG. 4 , the space between the anode 13 and the cover 14 where the plating solution L is filled becomes relatively large. As a result, a larger proportion of the electric force emitted from the anode 13 toward the cover 14 (see electric field lines E in FIG. 4 ) subsequently acts on the processing surface of the substrate W, promoting plating on the processing surface. On the other hand, when the anode-cover distance D is relatively small as shown in FIG. 5 , the space between the anode 13 and the cover 14 where the plating solution L is filled becomes relatively small. As a result, compared to when the anode-cover distance D is relatively large (see FIG. 4 ), a smaller proportion of the electric force emitted from the anode 13 toward the cover 14 (see electric field lines E in FIG. 5 ) subsequently acts on the processing surface of the substrate W, reducing the degree of promotion of plating on the processing surface.

[0030] Therefore, it is possible to actively adjust the thickness of the plating film by adjusting the anode-to-cover distance D in the substrate solution processing apparatus 10 shown in Fig. 1. In particular, with the substrate solution processing apparatus 10 shown in Fig. 1, it is possible to actively adjust the thickness of the plating film without changing the distance between the anode 13 and the processing surface (seed layer S) of the substrate W, or without changing the electrodes or the amount of current (current value).

[0031] Generally, changing the very small distance (narrow gap) between the substrate W (particularly the processing surface) and the anode 13 is equivalent to changing the distance between the electrodes, which may be undesirable from the standpoint of plating stability. On the other hand, the substrate solution processing apparatus 10 shown in Figure 1 allows for adjustment of only the anode-cover distance D while maintaining the desired distance between the substrate W (particularly the processing surface) and the anode 13, thereby making it possible to adjust the thickness of the plating film while suppressing the influence between the electrodes and ensuring the stability of the plating process.

[0032] An example of a substrate liquid processing method (plating processing method) using the substrate liquid processing apparatus 10 shown in Figure 1 includes a step of adjusting the distance between the cover body 14 and the anode 13 to control the thickness of the plating film deposited on the substrate W.

[0033] 6 is a flow chart showing an example of a substrate solution processing method (plating method). Each processing step shown in FIG. 6 is performed by a control device 60 appropriately controlling each part.

[0034] 6, first, a substrate surface cleaning process (pre-processing) is performed (S1 in FIG. 6). That is, the substrate W supported by the substrate support 11 is moved by the substrate support drive unit 21 under the control of the control device 60 to the processing position, and then a cleaning liquid is applied to the processing surface (upper surface) of the substrate W by the additional nozzle 35.

[0035] Thereafter, pure water is applied to the processing surface of the substrate W, and a pure water replacement process is performed (S2) to replace the cleaning liquid on the substrate W with pure water. Thereafter, the substrate W is rotated at high speed together with the substrate support part 11 by the substrate support drive unit 21, and a shake-off drying process is performed (S2) to splash off the liquid (mainly pure water) on the substrate W and dry the processing surface.

[0036] Thereafter, the cathode 12 is connected to the substrate W (the edge portion in the example shown in FIG. 1) (S3), while the anode 13 is placed at the plating processing position and brought close to the processing surface of the substrate W (S4). The distance between the anode 13 and the cover body 14 (anode-cover distance D) is adjusted to a size (distance) corresponding to the desired thickness of the plating film to be formed on the substrate W (S5). These processing steps S3 to S5 do not necessarily have to be performed in this order, and may be performed simultaneously, for example.

[0037] As an example, in processing step S3, the cathode 12 may be placed at a predetermined specific position to be connected to the edge of the substrate W, and in processing step S4, the anode 13 may be placed at a predetermined specific plating processing position. In this case, in processing step S5, the cover drive unit 24 variably adjusts the position of the cover body 14, thereby adjusting the anode-cover distance D to a desired distance while maintaining a predetermined distance between the anode 13 and the substrate W. Note that in processing step S5, the "size (distance) corresponding to the desired plating film thickness" for the anode-cover distance D can be obtained by any method. As an example, the control device 60 may obtain the "size (distance) corresponding to the desired plating film thickness" for the anode-cover distance D by referring to a lookup table obtained in advance based on the results of experiments or simulations. The control device 60 may then control the cover drive unit 24 in accordance with the "size (distance) corresponding to the desired plating film thickness" for the anode-cover distance D obtained in this manner.

[0038] Thereafter, current is applied to the cathode 12 and the anode 13 (S6). Meanwhile, the plating solution L supplied from the plating solution supply unit 29 to the plating solution discharge unit 22 via the solution supply line 30 is discharged from the plating solution discharge unit 22, and the plating solution L is supplied and filled between the cover body 14 and the substrate W (S7). As a result, the plating reaction of the plating solution L progresses, and a plating film is gradually deposited and accumulated on the substrate W. These processing steps S6 and S7 do not necessarily have to be performed in this order and may, for example, be performed simultaneously.

[0039] Then, when a plating film of a desired thickness has been deposited on the substrate W, the energization using the cathode 12 and the anode 13 is terminated (S8).

[0040] Thereafter, pure water is applied to the processing surface of the substrate W (more specifically, the plating film deposited on the substrate W) to replace the plating solution L on the substrate W with pure water (S9). Thereafter, a cleaning solution is applied to the processing surface of the substrate W to perform a substrate surface cleaning process (post-processing) (S10). Thereafter, pure water is applied to the processing surface of the substrate W to perform a pure water replacement process in which the cleaning solution on the substrate W is replaced with pure water (S11), and the substrate W is rotated at high speed by the substrate support drive unit 21 to perform a spin-off drying process (S11).

[0041] The present inventors have conducted a great deal of trial and error to gain knowledge about the substrate liquid processing apparatus 10 and substrate liquid processing method of the present embodiment, and have come to the following considerations and evaluations.

[0042] [Evaluation 1] The inventors formed a groove (e.g., 0.1 mm to several mm) in the cover body 14 (particularly the underside facing the substrate W supported by the substrate support portion 11), and performed a plating process using a substrate liquid processing apparatus 10 equipped with the cover body 14 to form a plating film on the substrate W.

[0043] The portion of the cover body 14 used in this evaluation that faces the substrate W and has the groove formed therein constitutes a first cover part that has a relatively large distance from the anode 13. On the other hand, the portion of the cover body 14 that faces the substrate W and does not have the groove formed therein constitutes a second cover part that has a smaller distance from the anode 13 than the first cover part.

[0044] As a result, it was confirmed that the thickness of the plating film deposited on the portion of the substrate W facing the first cover portion was larger (for example, by approximately 1 nm to several nm) than the thickness of the plating film deposited on the portion of the substrate W facing the second cover portion.

[0045] The evaluation results confirmed the finding that the larger the anode-cover distance D, the thicker the plating film formed on the substrate W, and the smaller the anode-cover distance D, the thinner the plating film.

[0046] [Evaluation 2] The inventors attached a plate-shaped silicon wafer to a part of the cover body 14 (particularly the underside facing the substrate W supported by the substrate support part 11), and performed a plating process using the substrate liquid processing apparatus 10 equipped with the cover body 14 to form a plating film on the substrate W. This silicon wafer has a thickness of, for example, about 0.1 mm to several mm, and a contact angle with water of about 70° to 80°.

[0047] The portion of the cover body 14 used in this evaluation that faces the substrate W and has no silicon wafer attached thereto forms a first cover part 14A that has a relatively large distance from the anode 13. On the other hand, the portion of the cover body 14 that faces the substrate W and has a silicon wafer attached thereto forms a second cover part 14B that has a smaller distance from the anode 13 than the first cover part 14A.

[0048] As a result, it was confirmed that the thickness of the plating film deposited on the portion of the substrate W facing the first cover portion 14A was larger (for example, by approximately 2 nm to several nm) than the thickness of the plating film deposited on the portion of the substrate W facing the second cover portion 14B.

[0049] The evaluation results confirmed the finding that the larger the anode-cover distance D, the thicker the plating film formed on the substrate W, and the smaller the anode-cover distance D, the thinner the plating film.

[0050] Second Embodiment In this embodiment, elements that are the same as or correspond to those in the first embodiment described above are denoted by the same reference numerals, and detailed description thereof will be omitted.

[0051] Fig. 7 is a diagram showing an outline of the apparatus configuration of an example of the substrate solution processing apparatus 10 of the second embodiment. Fig. 8 is a graph showing an example of the relationship between "substrate radial position" (X-axis) and "plating film thickness" (Y-axis) when the anode-cover distance D is constant over the entire portion of the cover body 14 that faces the substrate W (see Fig. 1). Fig. 9 is a graph showing an example of the relationship between "substrate radial position" (X-axis) and "plating film thickness" (Y-axis) when a plating film is formed on the substrate W by the substrate solution processing apparatus 10 shown in Fig. 7.

[0052] In Figures 8 and 9, "0 mm" on the X-axis (substrate diameter position) indicates the center position of the substrate W, "150 mm" indicates a position of the substrate W 150 mm away from the substrate center in a certain radial direction, and "-150 mm" indicates a position of the substrate W 150 mm away from the substrate center in the opposite radial direction.

[0053] The portion of the cover body 14 facing the substrate W may include a first cover portion 14A and a second cover portion 14B having a gap between it and the anode 13 (anode-cover gap D) that is smaller than that of the first cover portion 14A.

[0054] 7, the upper surface of the cover body 14 (the surface facing away from the anode 13) forms a flat surface (horizontal surface) along the horizontal direction, and the thickness of the cover body 14 (the vertical width in FIG. 7) gradually increases from the center (plating solution discharge portion 22) toward the outer periphery. That is, the outer periphery of the cover body 14 protrudes more toward the anode 13 and the substrate W than the center of the cover body 14 so as to gradually approach the anode 13 (i.e., the anode-cover distance D gradually decreases) as it moves away from the center (approaching the outer peripheral edge). In particular, the lower surface of the cover body 14 shown in FIG. 7 (i.e., the surface of the cover body 14 facing the anode 13 and the substrate W) gradually approaches the anode 13 in proportion to the distance from the center, and therefore at least a portion of the lower surface of the cover body 14 has a conical shape.

[0055] 7, the portion of the cover body 14 facing the center of the substrate W is the first cover portion 14A, which has a relatively large distance from the anode 13, and the portion facing the outer periphery (peripheral edge) of the substrate W is the second cover portion 14B, which has a relatively small distance from the anode 13. Therefore, the portion of the substrate W that faces the first cover portion 14A (for example, the center of the substrate W in the example of FIG. 7) is located farther from the portion of the substrate W to which the cathode 12 is connected than the portion of the substrate W that faces the second cover portion 14B (for example, the outer periphery of the substrate W in the example of FIG. 7).

[0056] Generally, the plating process tends to progress more easily and the thickness of the deposited plating film tends to increase in a portion of the substrate W closer to the location where the cathode 12 is connected. Therefore, when the anode-cover distance D is constant over the entire portion of the cover body 14 that faces the substrate W (see FIG. 1), the plating film formed on the substrate W may tend to be thicker the closer it is to the outer periphery of the substrate W where the cathode 12 is connected (see FIG. 8).

[0057] On the other hand, when a plating film is formed on a substrate W using the substrate solution processing apparatus 10 shown in Fig. 7, the corresponding anode-cover distance D becomes relatively smaller in areas closer to the outer periphery of the substrate W, resulting in relatively less formation of the plating film. Therefore, when a plating film is formed on a substrate W using the substrate solution processing apparatus 10 shown in Fig. 7, the difference in thickness of the plating film between the center and outer periphery of the substrate W is reduced (see Fig. 9), making it possible to form a plating film with a more uniform thickness over the entire processed surface of the substrate W.

[0058] As described above, the substrate solution processing apparatus 10 of this embodiment is advantageous in improving the film thickness distribution of the plating film formed on the substrate W.

[0059] [Third Embodiment] In this embodiment, elements that are the same as or correspond to those in the first and second embodiments described above are denoted by the same reference numerals, and detailed description thereof will be omitted.

[0060] Fig. 10 is a diagram showing an outline of the apparatus configuration of an example of a substrate solution processing apparatus 10 according to the third embodiment. Fig. 11 is a graph showing an example of the relationship between "substrate radial position" (X-axis) and "plating film thickness" (Y-axis) when the anode-cover distance D is constant over the entire portion of the cover body 14 that faces the substrate W (see Fig. 1). Fig. 12 is a graph showing an example of the relationship between "substrate radial position" (X-axis) and "plating film thickness" (Y-axis) when a plating film is formed on a substrate W by the substrate solution processing apparatus 10 shown in Fig. 10.

[0061] 10, like the cover body 14 shown in FIG. 7, the upper surface of the cover body 14 forms a flat surface along the horizontal direction. On the other hand, the cover body 14 shown in FIG. 10 has a thickness that gradually increases toward the outer peripheral edge at the outer periphery, but has a basically uniform thickness from the center to the outer periphery. That is, the outer periphery of the cover body 14 protrudes more toward the anode 13 and the substrate W than the center of the cover body 14, so as to gradually approach the anode 13 as it approaches the outer peripheral edge (i.e., so that the anode-cover distance D gradually decreases). Thus, the lower surface of the cover body 14 shown in FIG. 10 from the center to the outer periphery has a horizontal plane shape, while the outer periphery has a conical shape.

[0062] Therefore, of the cover body 14 shown in Figure 10, the part facing the center of the substrate W is the first cover part 14A, which has a relatively large distance from the anode 13, and the part facing the outer periphery of the substrate W is the second cover part 14B, which has a relatively small distance from the anode 13.

[0063] As described above, the plating process tends to progress more easily in the portion of the substrate W closer to where the cathode 12 is connected, and the thickness of the deposited plating film tends to be larger, and the plating film formed on the substrate W may have a locally large thickness in the outer periphery of the substrate W (see Figure 11).

[0064] On the other hand, when a plating film is formed on a substrate W using the substrate solution processing apparatus 10 shown in Fig. 10, the anode-cover distance D corresponding to the outer periphery of the substrate W is relatively small, and as a result, the formation of a plating film on the outer periphery of the substrate W is relatively suppressed. Therefore, when a plating film is formed on a substrate W using the substrate solution processing apparatus 10 shown in Fig. 10, the difference in thickness of the plating film between the center and outer periphery of the substrate W is reduced (see Fig. 12), and a plating film having a more uniform thickness can be formed over the entire processing surface of the substrate W.

[0065] As described above, the substrate solution processing apparatus 10 of this embodiment is advantageous in improving the film thickness distribution of the plating film formed on the substrate W.

[0066] [Fourth Embodiment] In this embodiment, elements that are the same as or correspond to those in the first to third embodiments described above are given the same reference numerals, and detailed description thereof will be omitted.

[0067] FIG. 13 is a diagram showing an outline of an example of the structure of a substrate liquid processing apparatus 10 according to the fourth embodiment.

[0068] The portion of the anode 13 facing the second cover part 14B of the cover body 14, in which the anode-cover distance D is relatively small, may protrude toward the cover body 14 more than the portion of the anode 13 facing the first cover part 14A, in which the anode-cover distance D is relatively large.

[0069] The outer peripheral portion of the anode 13 shown in Fig. 13 has a thickness (second anode thickness) that is greater than the thickness (first anode thickness) of the portion from the center to the outer peripheral portion of the anode 13 (i.e., the central portion and intermediate portion). In the example shown in Fig. 13, the portion from the center to the outer peripheral portion of the anode 13 (i.e., the central portion and intermediate portion) has a uniform thickness (first anode thickness), and the outer peripheral portion of the anode 13 has a uniform thickness (second anode thickness). Note that at least one of the first anode thickness and the second anode thickness of the anode 13 may gradually increase, at least in part, with increasing distance from the center (i.e., with increasing distance to the outer peripheral edge).

[0070] 13, the anode-cover distance D corresponding to the outer periphery of the substrate W is relatively small, resulting in relatively less plating film formation in the outer periphery of the substrate W. Therefore, when a plating film is formed on the substrate W using the substrate solution processing apparatus 10 shown in FIG. 13, the difference in thickness of the plating film between the center and outer periphery of the substrate W is reduced (see FIGS. 11 and 12), making it possible to improve the thickness distribution of the plating film.

[0071] Fifth Embodiment In this embodiment, elements that are the same as or correspond to those in the first to fourth embodiments described above are given the same reference numerals, and detailed description thereof will be omitted.

[0072] 14A and 14B are diagrams showing an outline of the device configuration of an example of the substrate liquid processing apparatus 10 according to the fifth embodiment, respectively.

[0073] At least one of the portion of the anode 13 facing the second cover portion 14B and the second cover portion 14B may be subjected to a surface treatment so as to have a large contact angle with the liquid (plating solution L). The surface treatment enables at least one of the portion of the anode 13 facing the second cover portion 14B and the second cover portion 14B to have a larger contact angle than the portion of the anode 13 facing the first cover portion 14A and the first cover portion 14A.

[0074] The surface treatment referred to here is not limited to this, and may be a treatment that chemically changes the properties of the surface to be treated, or a treatment that applies a substance having desired properties (i.e., a substance that has a large contact angle with the liquid (plating solution L)) to the surface to be treated.

[0075] 14A , the cover body 14 is subjected to a surface treatment such that the surface of the outer periphery of the cover body 14 (particularly the surface of the second cover portion 14B) is covered with a water-repellent material 40. The portion of the cover body 14 extending from the center to the outer periphery (i.e., the first cover portion 14A) shown in FIG. 14A is not covered with the water-repellent material 40. Therefore, the plating solution L filled between the anode 13 and the cover body 14 comes into contact with a material exhibiting relatively weak water repellency in the portion extending from the center to the outer periphery of the cover body 14, while it comes into contact with a material exhibiting relatively strong water repellency in the outer periphery of the cover body 14.

[0076] 14B , the anode 13 is subjected to a surface treatment such that the surface of the outer periphery of the anode 13 (particularly the surface facing the cover body 14) is covered with a water-repellent material 40. The portion of the anode 13 extending from the center to the outer periphery (i.e., the center and intermediate portions) shown in FIG. 14B is not covered with the water-repellent material 40. Therefore, the plating solution L filled between the anode 13 and the cover body 14 comes into contact with a member exhibiting relatively weak water repellency in the portion extending from the center to the outer periphery of the anode 13, while it comes into contact with a member exhibiting relatively strong water repellency in the outer periphery of the anode 13.

[0077] As a result of extensive research, the present inventors have newly discovered that the thickness of the plating film deposited on the substrate W can be adjusted by changing the water repellency of the anode 13 and / or cover body 14 (particularly the surface that comes into contact with the plating liquid L) with respect to the plating liquid L. In other words, the inventors have discovered that, when conditions other than the water repellency of the anode 13 and / or cover body 14 with respect to the plating liquid L are the same, the thickness of the plating film formed on the substrate W tends to decrease as the water repellency of the anode 13 and / or cover body 14 with respect to the plating liquid L increases.

[0078] This finding is believed to be due to the fact that increasing the water repellency of the anode 13 and / or cover 14 with respect to the plating solution L reduces the effective volume of the plating solution L filled between the anode 13 and the cover 14, thereby weakening the electric force acting on the processing surface of the substrate W. By reducing the volume of the plating solution L between the anode 13 and the cover 14, the proportion of the electric force emitted from the anode 13 toward the cover 14 (see electric field lines E in FIGS. 4 and 5 ) that subsequently acts on the processing surface of the substrate W decreases, thereby weakening the degree of promotion of the plating process on the processing surface. On the other hand, by increasing the volume of the plating solution L between the anode 13 and the cover 14, the proportion of the electric force emitted from the anode 13 toward the cover 14 that subsequently acts on the processing surface of the substrate W increases, thereby promoting the formation of a plating film on the processing surface.

[0079] 14A and 14B, it is possible to actively adjust the thickness of the plating film by adjusting the coverage area of ​​the water-repellent material 40. In particular, with the substrate solution processing apparatus 10 shown in Figures 14A and 14B, it is possible to actively adjust the thickness of the plating film without changing the distance between the anode 13 and the processing surface (seed layer S) of the substrate W, or without changing the electrodes or the amount of current flowing (current value).

[0080] 14A and 14B, the portion of the cover body 14 facing the center of the substrate W is the first cover part 14A, which has a relatively large length (vertical length in FIGS. 14A and 14B) of the space formed between the anode 13 and the cover body 14 and which can be filled with the plating liquid L. On the other hand, the portion of the cover body 14 facing the outer periphery of the substrate W is the second cover part 14B, which has a relatively small length of the space formed between the anode 13 and the cover body 14 and which can be filled with the plating liquid L.

[0081] 14A, the formation of a plating film on the substrate W is relatively suppressed in the portion (periphery) of the substrate W corresponding to the outer periphery of the cover body 14 where the water-repellent material 40 is provided. Therefore, when a plating film is formed on the substrate W using the substrate solution processing apparatus 10 shown in FIG. 14A, the difference in thickness of the plating film between the center and outer periphery of the substrate W is reduced (see FIGS. 11 and 12), and the thickness distribution of the plating film can be improved.

[0082] Similarly, when a plating film is formed on a substrate W using the substrate solution processing apparatus 10 shown in Figure 14B, the formation of the plating film is relatively suppressed in the portion (periphery) of the substrate W corresponding to the outer periphery of the anode 13 where the water-repellent material 40 is provided. Therefore, when a plating film is formed on a substrate W using the substrate solution processing apparatus 10 shown in Figure 14B, the difference in thickness of the plating film between the center and outer periphery of the substrate W is reduced (see Figures 11 and 12), and the thickness distribution of the plating film can be improved.

[0083] 15A and 15B are diagrams showing an outline of the apparatus configuration of another example of the substrate liquid processing apparatus 10 according to the fifth embodiment.

[0084] This embodiment is also applicable when the part of the cover body 14 facing the substrate W includes a first cover part 14A having a relatively large gap between it and the anode 13, and a second cover part 14B having a relatively small gap between it and the anode 13 (smaller than the first cover part 14A).

[0085] 15A and 15B, the cover body 14 gradually approaches the anode 13 with increasing distance from the center (i.e., approaching the outer peripheral edge), resulting in a smaller anode-cover distance D. In Fig. 15A, similar to the example shown in Fig. 14A described above, the cover body 14 has been subjected to surface treatment such that the outer peripheral surface of the cover body 14 (particularly the surface of the second cover portion 14B) is covered with a water-repellent material 40. On the other hand, in Fig. 15B, similar to the example shown in Fig. 14B described above, the anode 13 has been subjected to surface treatment such that the outer peripheral surface of the anode 13 (particularly the surface facing the cover body 14) is covered with a water-repellent material 40.

[0086] According to the example substrate liquid processing apparatus 10 shown in Figures 15A and 15B, the water-repellent material 40 provided on the outer periphery of the anode 13 and the narrowing of the anode-cover distance D are synergistically combined to more effectively reduce the thickness of the plating film deposited on the outer periphery of the substrate W.

[0087] The cover body 14 shown in Figures 15A and 15B has a configuration similar to that of the cover body 14 shown in Figure 7 described above, but the cover body 14 and / or the anode 13 may have any other configuration (see, for example, Figures 10 and 13).

[0088] The present inventors have conducted a great deal of trial and error to gain knowledge about the substrate liquid processing apparatus 10 and substrate liquid processing method of the present embodiment, and have come to the following considerations and evaluations.

[0089] [Evaluation 3] The inventors provided a water-repellent material 40 on a part of the cover body 14 (particularly the underside facing the substrate W supported by the substrate support part 11), and performed a plating process using a substrate liquid processing apparatus 10 equipped with the cover body 14 to form a plating film on the substrate W. This water-repellent material 40 is, for example, a water-repellent tape having a contact angle with water of approximately 80° to 90°.

[0090] The portion of the cover body 14 used in this evaluation that faces the substrate W and that does not have the water-repellent material 40 attached thereto constitutes the first cover portion 14A. On the other hand, the portion of the cover body 14 that faces the substrate W and that has the water-repellent material 40 attached thereto constitutes the second cover portion 14B.

[0091] As a result, it was confirmed that the thickness of the plating film deposited on the portion of the substrate W facing the first cover portion 14A was larger (for example, by approximately 3 nm to several nm) than the thickness of the plating film deposited on the portion of the substrate W facing the second cover portion 14B.

[0092] The evaluation results confirmed the finding that the larger the anode-cover distance D, the thicker the plating film formed on the substrate W, and the smaller the anode-cover distance D, the thinner the plating film. In particular, it is believed that the water-repellent effect of the water-repellent material 40 substantially reduces the thickness of the plating solution L in the region between the anode 13 and the cover body 14 (particularly the region where the water-repellent material 40 is present), and as a result, the thickness of the plating film is effectively reduced.

[0093] Sixth Embodiment In this embodiment, elements that are the same as or correspond to those in the first to fifth embodiments described above are given the same reference numerals, and detailed description thereof will be omitted.

[0094] Fig. 16 is a diagram showing an outline of the apparatus configuration of an example of the substrate liquid processing apparatus 10 according to the sixth embodiment. Fig. 17 is a diagram showing an example of an image of electric field lines E emanating from the anode 13 (particularly the portion covered with the insulating member 43) of the substrate liquid processing apparatus 10 shown in Fig. 16.

[0095] The anode 13 may include a portion where the electric force acting on the region between the anode 13 and the cover body 14 is relatively strong and a portion where the electric force acting on the region between the anode 13 and the cover body 14 is relatively weak. In other words, the electric force acting on the region between the anode 13 and the cover body 14 from the portion of the anode 13 facing the second cover portion 14B of the cover body 14 may be weaker than the electric force acting on the region between the anode 13 and the cover body 14 from the portion of the anode 13 facing the first cover portion 14A.

[0096] 16 , the surface (particularly the surface facing the cover body 14) of the outer periphery (the portion facing the second cover part 14B) of the anode 13 is covered with an electrically insulating member 43. The portion of the anode 13 shown in FIG. 16 extending from the center to the outer periphery (i.e., the central portion and intermediate portion) is not covered with the insulating member 43. Therefore, the electrical force generated from the outer periphery of the anode 13 toward the region between the anode 13 and the cover body 14 is blocked by the insulating member 43, and as a result, the electrical force does not act at all or hardly acts on the region between the anode 13 and the cover body 14.

[0097] As a result of extensive research, the present inventors have newly discovered that it is possible to adjust the thickness of the plating film deposited on the substrate W by changing the electric force acting from the anode 13 on the region between the anode 13 and the cover body 14. In other words, the inventors have discovered that, when other conditions are the same, the thickness of the plating film formed on the substrate W tends to increase as the electric force acting from the anode 13 on the region between the anode 13 and the cover body 14 increases.

[0098] 16, it is possible to locally suppress the formation of a plating film on the outer periphery of the substrate W facing the outer periphery of the anode 13 on which the insulating member 43 is provided. Therefore, by adjusting the coverage area of ​​the insulating member 43 in the substrate solution processing apparatus 10 shown in FIG. 16, it is possible to actively adjust the thickness of the plating film.

[0099] The present inventors have conducted a great deal of trial and error to gain knowledge about the substrate liquid processing apparatus 10 and substrate liquid processing method of the present embodiment, and have come to the following considerations and evaluations.

[0100] [Evaluation 4] The inventors formed a coating (e.g., an electrically insulating material) that effectively reduces or blocks electrical force on a portion of the anode 13 (particularly the upper surface facing the cover 14), and performed a plating process using the substrate liquid processing apparatus 10 equipped with the cover 14 to form a plating film on the substrate W. This coating is, for example, a hydrophilic tape having a contact angle with water of approximately 20° to 40°.

[0101] The portion of the cover body 14 used in this evaluation that faces the substrate W and is not coated forms the first cover part 14A, while the portion of the cover body 14 that faces the substrate W and is coated forms the second cover part 14B.

[0102] As a result, it was confirmed that the thickness of the plating film deposited on the portion of the substrate W facing the first cover portion 14A was larger (for example, by approximately 5 nm to 10 nm) than the thickness of the plating film deposited on the portion of the substrate W facing the second cover portion 14B.

[0103] The evaluation results confirmed the finding that the thickness of the plating film formed on the substrate W becomes smaller when the electric force emitted from the anode 13 in a direction away from the substrate W is reduced.

[0104] 16, the gap between the anode 13 and the cover body 14 (anode-cover gap D) has a constant size throughout, but does not necessarily have to be constant. For example, the gap between the outer periphery of the anode 13, where the insulating member 43 is provided, and the cover body 14 (second cover part 14B) may be smaller than the gap between the center of the anode 13 and the cover body 14 (first cover part 14A).

[0105] Seventh Embodiment In this embodiment, elements that are the same as or correspond to those in the first to sixth embodiments described above are given the same reference numerals, and detailed description thereof will be omitted.

[0106] Fig. 18 is a plan view showing an example of a connection mode between the substrate W and the cathode 12. Fig. 19 is a plan view showing an example of the cover body 14 used in the plating process of the substrate W shown in Fig. 18.

[0107] 19, the thicker the area, the thicker the cover body 14, and the thinner the area, the thinner the cover body 14. Note that Fig. 19 only shows the substrate-facing portion 14W of the cover body 14, which is the portion that faces the substrate W. The cover body 14 has a portion that protrudes outward (horizontally) from the substrate-facing portion 14W (i.e., a portion that does not face the substrate W) around the entire periphery of the substrate-facing portion 14W.

[0108] The second cover portion 14B of the cover body 14, which has a smaller gap between it and the anode 13 than the first cover portion 14A, may be provided so as to face the portion of the substrate W to which the cathode 12 is connected.

[0109] 18, cathodes 12 are connected to a plurality of (four) locations on the outer peripheral edge of a substrate W having a circular planar shape. Each of the cathodes 12 shown in Fig. 18 is supported by a cathode support arm 45, and is connected to the power supply 26 (see Fig. 1) via an electric wire 27.

[0110] 19 is configured so that the portion of the cover body facing the substrate W, particularly the substrate-facing portion 14W that faces the substrate W, where a stronger electric force acts when current is applied, has a greater thickness. Specifically, the thickness of the cover body 14 may be determined according to the "distance from the point where the cathode 12 is connected" of the facing substrate portion, and the portion of the cover body facing the substrate portion that is closer "distance from the point where the cathode 12 is connected" has a greater thickness.

[0111] The upper surface of the cover body 14 shown in Fig. 19 (the surface facing away from the anode 13) forms a flat surface (horizontal surface) along the horizontal direction (see Figs. 7 and 10). Therefore, the thicker the portion of the cover body 14, the more the cover body 14 protrudes downward (towards the anode 13), and the smaller the gap (anode-cover gap D) between the anode 13 and the cover body 14. Therefore, the portion (central portion) of the cover body 14 facing the central portion of the substrate W located relatively far from the portion to which the cathode 12 is connected is configured as a relatively thin first cover portion 14A. On the other hand, the portion (peripheral portion of the substrate-facing portion 14W) of the cover body 14 facing the portion (peripheral portion) of the substrate W to which the cathode 12 is connected is configured as a relatively thick second cover portion 14B.

[0112] The stronger the electric force acting during current application at a portion of the substrate (i.e., the closer the portion of the substrate to the portion connected to the cathode 12), the more the formation of a plating film tends to be promoted, resulting in a thicker plating film. Therefore, if the difference in the strength of the electric force acting during current application between portions of the substrate W is relatively large, the resulting plating film is likely to vary relatively greatly in thickness. On the other hand, with the substrate solution processing apparatus 10 shown in FIG. 19 described above, the stronger the electric force acting during current application at a portion of the substrate (i.e., the closer the portion of the substrate to the portion connected to the cathode 12), the smaller the corresponding anode-cover distance D, thereby suppressing the formation of a plating film. Therefore, the substrate solution processing apparatus 10 of this embodiment is advantageous for improving the thickness distribution of the plating film formed on the substrate W.

[0113] 18 and 19, the thickness of the plating film is adjusted by partially changing the thickness of the cover 14 to adjust the anode-cover distance D. However, the thickness of the plating film may also be adjusted by applying the techniques of the other embodiments described above to this embodiment. For example, the thickness of the anode 13 may be partially changed depending on the "strength of the electric force acting upon energization (distance from the cathode 12)" of the opposing portion of the substrate W (see FIG. 13). Furthermore, depending on the "strength of the electric force acting upon energization (distance from the cathode 12)" of the opposing portion of the substrate W, a water-repellent material 40 may be partially applied to the anode 13 and / or the cover 14 (see FIGS. 14A and 14B), or an insulating member 43 may be partially applied to the anode 13 (see FIG. 16).

[0114] Eighth Embodiment In this embodiment, elements that are the same as or correspond to those in the first to seventh embodiments described above are given the same reference numerals, and detailed description thereof will be omitted.

[0115] Fig. 20 is a plan view illustrating a chip portion C formed on a substrate (wafer) W. Fig. 21 is a plan view showing an example of a cover body 14 used in plating the substrate W shown in Fig. 20. Note that Fig. 21 shows only a substrate-facing portion 14W of the cover body 14, which is the portion that faces the substrate W. The cover body 14 has a portion that protrudes outward (in the horizontal direction) from the substrate-facing portion 14W (i.e., a portion that does not face the substrate W) around the entire periphery of the substrate-facing portion 14W.

[0116] Generally, each chip portion C to be cut out from the substrate W includes a dense pattern portion Cd (dense) where the pattern density is relatively high, and an sparse pattern portion Ci (iso) where the pattern density is relatively low.

[0117] Therefore, the substrate W to be plated has portions corresponding to dense pattern portions Cd where the pattern density is locally high, and portions corresponding to sparse pattern portions Ci where the pattern density is lower than that of the dense pattern portions Cd.

[0118] In such a substrate W, there is a demand for a plating film with a larger thickness in portions corresponding to higher pattern densities. To meet this demand, in the cover body 14 (particularly the substrate-facing portion 14W) shown in Fig. 21, the portion facing the portion of the substrate W corresponding to the dense pattern portion Cd is configured as a "first cover portion 14A with a relatively large anode-cover distance D." On the other hand, other portions of the cover body 14 (i.e., portions not facing the portion corresponding to the dense pattern portion Cd) are configured as a "second cover portion 14B with a relatively small anode-cover distance D."

[0119] 21 (particularly, the substrate-facing portion 14W), the thickness of a portion (first cover portion 14A) facing a portion corresponding to the dense pattern portion Cd of the substrate W is locally relatively small. On the other hand, the thickness of another portion (second cover portion 14B) of the cover body 14 is greater than the thickness of the first cover portion 14A.

[0120] The upper surface of the cover body 14 shown in Fig. 21 (the surface facing away from the anode 13) forms a flat surface (horizontal surface) along the horizontal direction (see Figs. 7 and 10). Therefore, the thicker the portion of the cover body 14, the more the cover body 14 protrudes downward (towards the anode 13), and the smaller the gap between the anode 13 and the cover body 14 (anode-cover gap D). Therefore, the second cover part 14B protrudes downward more than the first cover part 14A, and the lower surface of the second cover part 14B is located closer to the anode 13 than the lower surface of the first cover part 14A.

[0121] As described above, the thickness of the plating film deposited on the substrate W tends to increase as the anode-to-cover distance D increases (see FIGS. 4 and 5). Therefore, with the substrate solution processing apparatus 10 including the cover body 14 of this embodiment, a plating film with a greater thickness can be formed locally on the portion of the substrate W facing the first cover part 14A (i.e., the portion corresponding to the dense pattern portion Cd).

[0122] 20 and 21, the thickness of the plating film is adjusted by partially changing the thickness of the cover 14 to adjust the anode-cover distance D. However, the thickness of the plating film may also be adjusted by applying the techniques of the other embodiments described above to this embodiment. For example, the thickness of the anode 13 may be partially changed depending on whether the facing portion of the substrate W is a dense pattern portion Cd (see FIG. 13). Furthermore, depending on whether the facing portion of the substrate W is a dense pattern portion Cd, a water-repellent material 40 may be partially applied to the anode 13 and / or the cover 14 (see FIGS. 14A and 14B), or an insulating member 43 may be partially applied to the anode 13 (see FIG. 16).

[0123] As described above, according to each of the above-mentioned embodiments, it is possible to freely adjust the thickness of the plating film formed on the substrate W partially by changing other configurations (the configuration between the anode 13 and the cover body 14) without changing the configuration between the electrodes.

[0124] In particular, by providing a space between the anode 13 and the cover 14 that can be filled with plating solution L and whose distance is adjustable, and by adjusting the amount of electrical force flowing toward this space, separate from the electrical force that flows directly between the electrodes, the thickness of the plating film can be partially adjusted. The amount of electrical force flowing into the space between the anode 13 and the cover 14 can be partially adjusted by adjusting the anode-cover distance D (see FIGS. 7, 10, and 13), as described above. Furthermore, as described above, the amount of electrical force flowing into the space between the anode 13 and the cover 14 can also be partially adjusted by adjusting the water repellency (contact angle with respect to the plating solution L) of the anode 13 and / or the cover 14 (see FIGS. 14A and 14B) or adjusting the electrical insulation of the anode 13 (see FIG. 16).

[0125] Furthermore, because the space between the substrate W (cathode) and the anode 13 is very narrow, it is not necessarily desirable to frequently change the distance between the substrate W and the anode 13, given the possibility of contact and electrical short-circuiting. In addition to such electrical disadvantages, there is a concern that the shape of the anode 13 may be transferred to the substrate W (plating film) if the anode 13 approaches the substrate W, and there is also a concern that the plating solution L may pile inappropriately on the substrate W if the anode 13 moves away from the substrate W. On the other hand, the substrate solution processing apparatus 10 of each of the above-described embodiments makes it possible to adjust the thickness of the plating film without changing the configuration between the electrodes, thereby effectively avoiding these concerns associated with changing the distance between the electrodes.

[0126] Furthermore, among the substrate liquid processing apparatus 10 according to the above-described embodiment, the substrate liquid processing apparatus 10 that can be realized by simply processing the cover body 14 does not necessarily require processing of the anode 13, can be provided relatively inexpensively, and is relatively easy to process and adjust individually.

[0127] Furthermore, the substrate liquid processing apparatus 10 of each of the above-described embodiments can also enjoy the benefits inherent to a face-up type apparatus.

[0128] For example, compared to face-down type apparatuses that perform plating on substrates W with their processing surfaces facing downward, face-up type apparatuses are advantageous in terms of smaller unit size and stacking of units, thereby enabling a smaller overall equipment footprint. Face-up type apparatuses are also advantageous over face-down type apparatuses in terms of improved in-plane uniformity of plating film thickness, thinner seed layers, and finer patterns. Face-up type apparatuses are also advantageous in terms of changing the type of plating solution; for example, by providing appropriate nozzles and wastewater units, multiple types of plating solutions can be used. Furthermore, face-up type apparatuses can perform pre-treatment, plating treatment, and post-treatment in a single common unit, which is advantageous in terms of a smaller footprint and the prevention of the growth of native oxide films on substrates W.

[0129] Furthermore, face-up type equipment allows for immediate substrate cleaning after plating, thereby preventing deterioration of plating film thickness distribution (surface roughening) due to plating solution etching, making it advantageous for forming thin-film plating for next-generation fine patterns. Face-up type equipment also allows for extremely small electrode spacing, which is advantageous for reducing plating solution consumption. Face-down type equipment also uses a bath (container) to store the plating solution, but the use of such a bath is prone to particle generation. On the other hand, face-up type equipment does not require such a bath (container). Even if fresh plating solution is used for each substrate W, the amount of plating solution consumed is reduced compared to face-down type equipment, significantly reducing costs.

[0130] It should be noted that the embodiments and modifications disclosed in this specification are merely illustrative in all respects and should not be construed as limiting. The above-described embodiments and modifications may be omitted, substituted, and modified in various ways without departing from the scope and spirit of the appended claims. For example, the above-described embodiments and modifications may be combined in whole or in part, and embodiments other than those described above may be combined with the above-described embodiments or modifications. Furthermore, the effects of the present disclosure described in this specification are merely illustrative, and other effects may be obtained.

[0131] The technical category embodying the above technical idea is not limited. For example, the above technical idea may be embodied by a computer program that causes a computer to execute one or more procedures (steps) included in a method of manufacturing or using the above device. The above technical idea may also be embodied by a computer-readable non-transitory recording medium on which such a computer program is recorded.

Claims

1. A substrate liquid processing apparatus comprising: a substrate support part; a first electrode electrically connected to a substrate supported by the substrate support part; a cover body facing the substrate and having a plating solution filled between the substrate and the cover body; and a second electrode positioned between the substrate and the cover body and having a polarity different from that of the first electrode, wherein the portion of the cover body facing the substrate includes a first cover part and a second cover part whose distance from the second electrode is smaller than that of the first cover part.

2. The substrate liquid processing apparatus according to claim 1, wherein the first cover portion faces a central portion of the substrate, and the second cover portion faces a peripheral portion of the substrate.

3. A substrate liquid processing apparatus as described in claim 1 or 2, wherein the portion of the substrate facing the first cover portion is located farther from the portion of the substrate to which the first electrode is connected than the portion of the substrate facing the second cover portion.

4. The substrate liquid processing apparatus according to claim 1 or 2, wherein at least a portion of the surface of said cover body facing said substrate has a conical surface shape.

5. The substrate liquid processing apparatus according to claim 1 or 2, further comprising a plating liquid application unit that applies the plating liquid to a central portion of the substrate.

6. The substrate liquid processing apparatus according to claim 1 or 2, wherein the second cover portion protrudes further toward the substrate than the first cover portion.

7. A substrate liquid processing apparatus according to claim 1 or 2, wherein the portion of the second electrode facing the second cover portion protrudes further toward the cover body than the portion of the second electrode facing the first cover portion.

8. A substrate liquid processing apparatus as described in claim 1 or 2, wherein the electric force acting on the region between the second electrode and the cover body from the portion of the second electrode facing the second cover portion is weaker than the electric force acting on the region between the second electrode and the cover body from the portion of the second electrode facing the first cover portion.

9. The substrate liquid processing apparatus according to claim 1 or 2, wherein a portion of the surface of said second electrode facing said cover body, which faces said second cover portion, is covered with an electrically insulating member.

10. The substrate liquid processing apparatus according to claim 1 or 2, wherein the second cover portion faces a portion of the substrate to which the first electrode is connected.

11. A substrate liquid processing apparatus as described in claim 1, wherein the substrate has a portion corresponding to a dense portion where the pattern density is locally high and a portion corresponding to a sparse portion where the pattern density is lower than that of the dense portion, the first cover portion faces the portion corresponding to the dense portion, and the second cover portion faces the portion corresponding to the sparse portion.

12. A substrate liquid processing apparatus as described in claim 1 or 2, wherein at least one of the portion of the second electrode facing the second cover portion and the second cover portion is surface-treated to have a larger contact angle with the liquid than the portion of the second electrode facing the first cover portion and the first cover portion.

13. The substrate liquid processing apparatus according to claim 1 or 2, further comprising a gap adjustment unit that can variably adjust the gap between the cover body and the second electrode.

14. A substrate liquid processing apparatus comprising: a substrate support part; a first electrode electrically connected to a substrate supported by the substrate support part; a cover body facing the substrate supported by the substrate support part and having a plating solution filled between the substrate and the cover body; and a second electrode positioned between the substrate supported by the substrate support part and the cover body and having a polarity different from that of the first electrode, wherein the cover body includes a first cover portion and a second cover portion, and at least one of the portion of the second electrode facing the second cover portion and the second cover portion has been subjected to a surface treatment so as to have a larger contact angle with respect to liquid than the portion of the second electrode facing the first cover portion and the first cover portion.

15. A substrate liquid processing apparatus comprising: a substrate support part; a first electrode electrically connected to a substrate supported by the substrate support part; a cover body facing the substrate supported by the substrate support part and having a plating solution filled between the substrate and the cover body; and a second electrode positioned between the substrate supported by the substrate support part and the cover body and having a polarity different from that of the first electrode, wherein the cover body includes a first cover portion and a second cover portion, and the electric force acting from the portion of the second electrode facing the second cover portion on the region between the second electrode and the cover body is weaker than the electric force acting from the portion of the second electrode facing the first cover portion on the region between the second electrode and the cover body.

16. The substrate liquid processing apparatus according to claim 15, wherein a portion of the surface of said second electrode facing said cover body, which faces said second cover portion, is covered with an electrically insulating member.

17. A substrate liquid processing method using a substrate liquid processing apparatus comprising: a substrate support part; a first electrode electrically connected to a substrate supported by the substrate support part; a cover body facing the substrate supported by the substrate support part and having a plating solution filled between the cover body and the substrate; and a second electrode positioned between the substrate supported by the substrate support part and the cover body and having a polarity different from that of the first electrode, the substrate liquid processing method including a step of adjusting the distance between the cover body and the second electrode to control the thickness of a plating film deposited on the substrate.

18. A computer-readable recording medium having recorded thereon a program for causing a computer to execute each step of the substrate liquid processing method according to claim 17.

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