Display device including semiconductor light-emitting elements

Abstract

A display device including semiconductor light-emitting elements, according to an embodiment, comprises: a substrate; semiconductor light-emitting elements disposed on the substrate; a diffusion layer covering the semiconductor light-emitting elements; and a first black layer (128) disposed on the diffusion layer, wherein: the diffusion layer includes a first diffusion layer surrounding the semiconductor light-emitting elements and a second diffusion layer disposed on the first diffusion layer; and the viscoelastic flowability of the first diffusion layer may be greater than the viscoelastic flowability of the second diffusion layer.

Description

Display device including a semiconductor light-emitting element

[0001] The embodiment relates to a display device including a semiconductor light emitting element.

[0002] Large-area display devices include liquid crystal displays (LCDs), OLED displays, and micro-LED displays.

[0003] A micro-LED display is a display that uses micro-LEDs, which are semiconductor light-emitting elements with a diameter or cross-sectional area of ​​100㎛ or less, as display elements.

[0004] Micro-LED displays use semiconductor light-emitting diodes (micro-LEDs) as display elements, so they have superior performance in many characteristics, including contrast ratio, response speed, color reproducibility, viewing angle, brightness, resolution, lifespan, luminous efficiency, and brightness.

[0005] In particular, micro-LED displays have the advantage of being able to freely adjust the size and resolution by separating and combining the screen in a modular manner, and the advantage of being able to implement a flexible display. They are being applied not only to TVs but also to digital signage.

[0006]

[0007] Digital signage is a display installed inside or outside a building using a digital information display (DID), and is a device that provides images or videos containing advertisements or various information.

[0008] Types of digital signage include outdoor digital signage and indoor digital signage.

[0009] Outdoor digital signage refers to digital signage installed on building exteriors, billboards, or for outdoor cinemas. Indoor digital signage refers to digital signage installed on the interior walls of large shopping malls or in the form of signboards.

[0010] Digital signage can use micro-sized semiconductor light emitting diodes (LEDs) as display elements.

[0011] Meanwhile, when molding a semiconductor light-emitting element in a display panel, there is a problem in that a step is generated in the molding layer due to the semiconductor light-emitting element, which reduces light uniformity and viewing angle.

[0012] Additionally, if the molding layer does not completely cover the semiconductor light-emitting element, there is a problem of air bubbles being trapped, which reduces reliability.

[0013] One of the technical challenges of the embodiment is to prevent a step from occurring in the molding layer on the semiconductor light-emitting device.

[0014] Additionally, one of the technical challenges of the embodiment is to prevent reduction in light uniformity and viewing angle.

[0015] In addition, one of the technical challenges of the embodiment is to prevent photo-trapping occurring on the bottom surface of a semiconductor light-emitting device.

[0016] Additionally, one of the technical challenges of the embodiment is to improve the black feeling of the display device.

[0017] Additionally, one of the technical challenges of the embodiment is to simplify the manufacturing process of the display device.

[0018] The technical problems of the embodiment are not limited to those described in this article, but include those that can be understood through the description of the invention.

[0019] A display device including a semiconductor light-emitting element according to an embodiment includes a substrate; a semiconductor light-emitting element disposed on the substrate; a diffusion layer covering the semiconductor light-emitting element; and a first black layer (128) disposed on the diffusion layer, wherein the diffusion layer includes a first diffusion layer surrounding the semiconductor light-emitting element and a second diffusion layer disposed on the first diffusion layer, and the viscoelastic flowability of the first diffusion layer may be greater than the viscoelastic flowability of the second diffusion layer.

[0020] Additionally, in the embodiment, the height of the upper surface of the first diffusion layer may be less than or equal to the height of the upper surface of the semiconductor light-emitting element.

[0021] Additionally, in the embodiment, the first diffusion layer may not include a light scattering material, and the second diffusion layer may include a light scattering material.

[0022] Additionally, in the embodiment, the first diffusion layer and the second diffusion layer may include a light scattering material.

[0023] Additionally, the embodiment may further include a second black layer disposed between the first diffusion layer and the second diffusion layer.

[0024] Additionally, in the embodiment, the height of the upper surface of the second black layer may be less than or equal to the height of the upper surface of the semiconductor light-emitting element.

[0025] Additionally, in the embodiment, the first black layer (128) may include a plurality of grooves on the upper surface.

[0026] Additionally, the embodiment may further include a film layer disposed on the first black layer.

[0027] Additionally, in an embodiment, the first diffusion layer may include a pigment or dye that implements a black color.

[0028] Additionally, in the embodiment, the semiconductor light emitting element is connected to the substrate through bumps, and the first diffusion layer can fill the space between the bumps.

[0029] Additionally, in an embodiment, the hardness of the second diffusion layer may be greater than the hardness of the first diffusion layer.

[0030] In addition, a display device including a semiconductor light-emitting element according to another embodiment includes a substrate; a semiconductor light-emitting element disposed on the substrate; a diffusion layer covering the semiconductor light-emitting element; and a black diffusion layer disposed on the diffusion layer, wherein the viscoelastic flowability of the diffusion layer is greater than the viscoelastic flowability of the black diffusion layer, and the black diffusion layer may include a light scattering material and a dye or pigment that implements a black color.

[0031] Additionally, in an embodiment, the height of the upper surface of the diffusion layer may be less than or equal to the height of the upper surface of the semiconductor light-emitting element.

[0032] A display device including a semiconductor light-emitting element according to an embodiment has a technical effect of preventing a step from occurring in a molding layer on the semiconductor light-emitting element.

[0033] Additionally, the embodiment has a technical effect that can prevent reduction in light uniformity and viewing angle.

[0034] For example, in the embodiment, a diffusion layer having high viscoelastic flowability is arranged to surround a semiconductor light-emitting element, so that the upper surface of the diffusion layer is formed to have a uniform height, thereby preventing a step from occurring on the semiconductor light-emitting element, thereby preventing a reduction in light uniformity and viewing angle.

[0035] In addition, the embodiment has a technical effect of preventing a photo-trap occurring on the bottom surface of a semiconductor light-emitting device.

[0036] For example, an embodiment can be configured such that a highly viscoelastic, highly flowable diffusion layer surrounds a semiconductor light-emitting element and underfills the bottom surface of the semiconductor light-emitting element. For example, the gaps between bumps of the light-emitting element can be filled to prevent pore trapping, thereby improving reliability.

[0037] Additionally, the embodiment has a technical effect that can improve the black feeling of a display device.

[0038] For example, the embodiment can improve the blackness by placing a black layer under a semiconductor light-emitting element to reduce light reflection by bumps.

[0039] In addition, the embodiment has a technical effect of reducing reflectivity by diffusely reflecting light from external light even without a separate film layer being placed.

[0040] For example, the embodiment can form random grooves on the surface of the black layer to diffusely reflect light from external light.

[0041] In addition, the embodiment has a technical effect that can simplify the manufacturing process of a display device.

[0042] For example, the embodiment can manufacture a display device by integrally forming an optical film including a diffusion layer and a black layer and then thermally pressing and thermally curing the optical film on a substrate, thereby simplifying the manufacturing process.

[0043] The technical effects of the embodiments are not limited to those described in this article, but include those that can be understood through the description of the invention.

[0044] FIG. 1 is an exemplary diagram of a display device (1000) including a semiconductor light-emitting element for a display pixel according to an embodiment.

[0045] FIG. 2 is a perspective view of one of a plurality of display modules (200) included in a display device (1000) according to an embodiment.

[0046] FIG. 3 is a plan view of one display panel (210) included in a display module (200) according to an embodiment.

[0047] FIG. 4 is a cross-sectional view of a semiconductor light emitting device package along line B1-B1' in a display panel (210) according to the embodiment illustrated in FIG. 3.

[0048] Figure 5 is a conceptual diagram of a display device being studied internally.

[0049] Fig. 6 is a cross-sectional view of a display device including a semiconductor light-emitting element according to the first embodiment.

[0050] Fig. 7 is a cross-sectional view of an optical film used in the first embodiment of Fig. 6.

[0051] Fig. 8 is a cross-sectional view of a display device including a semiconductor light-emitting element according to the second embodiment.

[0052] Fig. 9 is a cross-sectional view of an optical film used in the second embodiment of Fig. 8.

[0053] Fig. 10 is a cross-sectional view of a display device including a semiconductor light-emitting element according to a third embodiment.

[0054] Fig. 11 is a cross-sectional view of a display device including a semiconductor light-emitting element according to the fourth embodiment.

[0055] Fig. 12 is a cross-sectional view of a display device including a semiconductor light-emitting element according to the fifth embodiment.

[0056] Fig. 13 is a cross-sectional view of a display device including a semiconductor light-emitting element according to the sixth embodiment.

[0057] Figure 14 is a graph showing the viscoelasticity according to the temperature of the diffusion layer in an embodiment.

[0058] Hereinafter, embodiments disclosed in the present specification will be described in detail with reference to the attached drawings. The suffixes "module" and "part" used in the following description for components are given or used interchangeably for the sake of ease of writing the specification, and do not in themselves have distinct meanings or roles. In addition, the attached drawings are intended to facilitate easy understanding of the embodiments disclosed in the present specification, and the technical ideas disclosed in the present specification are not limited by the attached drawings. In addition, when an element such as a layer, region, or substrate is referred to as existing "on" another element, this includes that it may be directly on the other element, or that other intermediate elements may exist therebetween.

[0059] The display devices described in this specification may include digital signage, digital TVs, mobile phones, smart phones, laptop computers, digital broadcasting terminals, personal digital assistants (PDAs), portable multimedia players (PMPs), navigation devices, slate PCs, tablet PCs, Ultra-Books, desktop computers, and the like. However, the configuration according to the embodiments described in this specification may also be applied to devices capable of displaying, even if they are new product types developed in the future.

[0060]

[0061] The coating layer structure of a display device according to the following embodiment and the display device including the same are described.

[0062]

[0063] (Example)

[0064] FIG. 1 is an exemplary diagram of a display device (1000) including a semiconductor light-emitting element for a display pixel according to an embodiment. The display device (1000) according to the embodiment may include a plurality of assembled display modules (200).

[0065] The display device (1000) of the embodiment can be applied to digital signage. For example, FIG. 1 is an example of indoor digital signage, but the display device (1000) of the embodiment can also be applied to outdoor digital signage.

[0066] Next, FIG. 2 is a perspective view of one of a plurality of display modules (200) included in a display device (1000) according to an embodiment.

[0067] The display module (200) illustrated in FIG. 2 can be mounted on each cabinet and assembled in a block manner to implement the display device (1000) of the embodiment.

[0068] The display module (200) of the embodiment may include a plurality of display panels (210) that output images, a module holder (220) on which the display panels (210) are placed, and a module cover (230) placed on the outside of the module holder (220).

[0069] The above-described plurality of display panels (210) can be arranged in a grid shape on a module holder (220) to form a single display module (200), and the individual display modules (200) can be assembled in a predetermined cabinet shape to implement a display device (1000) according to an embodiment. Display data can be transmitted to the assembled individual display modules (200) via wired or wireless means.

[0070]

[0071] FIG. 3 is a plan view of one display panel (210) included in a display module (200) according to an embodiment.

[0072] Referring to FIG. 3, a display panel (210) according to an embodiment may include a semiconductor light-emitting element (11) for a display pixel that implements each pixel.

[0073] For example, a semiconductor light-emitting element (11) for a display pixel according to an embodiment may include, but is not limited to, a first semiconductor light-emitting element (11a), a second semiconductor light-emitting element (11b), and a third semiconductor light-emitting element (11c).

[0074] Each of the first to third semiconductor light-emitting elements (11a, 11b, 11c) may be arranged in a repeating manner to form individual subpixels. For example, the first to third semiconductor light-emitting elements (11a, 11b, 11c) may be a red light-emitting element, a green light-emitting element, and a blue light-emitting element, respectively, but are not limited thereto.

[0075] The first to third semiconductor light-emitting elements (11a, 11b, 11c) may have a size in the micrometer (㎛) unit. The micrometer (㎛) size may mean that the width of at least one side of the light-emitting element has a size of several to several hundred ㎛.

[0076]

[0077] Next, FIG. 4 is a cross-sectional view of a semiconductor light emitting device package along line A1-A1' in a display panel (210) according to the embodiment illustrated in FIG. 3.

[0078] Referring to Fig. 4, each of the first to third semiconductor light-emitting elements (11a, 11b, 11c) may be placed on a wiring board (250). Fig. 4 is a cross-sectional view of a semiconductor light-emitting element package in which adjacent first semiconductor light-emitting elements (11a) are placed on a wiring board (250).

[0079] For example, a first wiring (251) and a second wiring (252) may be arranged on a wiring board (250). The first wiring (251) may be a common wiring that applies negative (-) power, and the second wiring (252) may be a wiring that applies positive (+) power, but is not limited thereto.

[0080] The above first semiconductor light-emitting element (11a) may include a first-first semiconductor light-emitting element (11a1) and a first-second semiconductor light-emitting element (11a2) that are arranged adjacently.

[0081] Each of the above-mentioned 1-1 semiconductor light-emitting element (11a1) and 1-2 semiconductor light-emitting element (11a2) may be mounted on the first wiring (251) and the second wiring (252) in a flip-chip form, but is not limited thereto.

[0082] According to an embodiment, the first-first semiconductor light-emitting element (11a1) and the first-second semiconductor light-emitting element (11a2) mounted on the first wiring (251) and the second wiring (252) can be arranged symmetrically.

[0083] For example, according to an embodiment, a second wire (252) that applies positive (+) power and a first wire (251) that applies negative (-) power in adjacent sub-pixels can be arranged symmetrically to each other.

[0084] In addition, the n electrode and p electrode of the 1-1 semiconductor light-emitting element (11a1) mounted on each of the first wiring (251) and the second wiring (252) and the n electrode and p electrode of the 1-2 semiconductor light-emitting element (11a2) may also be symmetrically arranged, but are not limited thereto.

[0085]

[0086] Next, Fig. 5 is a cross-sectional view of the display device being studied internally.

[0087] Referring to Fig. 5, a semiconductor light-emitting element (50) may be placed on a substrate (10). The semiconductor light-emitting element (50) may be connected to the substrate (10) using a bump (55).

[0088] For example, an insulating layer (15) may be placed on the substrate (10), a predetermined wiring (58) may be placed on the insulating layer (15), and the semiconductor light-emitting element (50) may be mounted on the substrate (10) through a bump (55).

[0089] Additionally, a diffusion layer (26) may be disposed on the semiconductor light-emitting element (50). A black layer (28), a film layer (30), and a diffusion pattern (32) may be disposed on the diffusion layer (26).

[0090] The above diffusion layer (26) may include light diffusion particles. In addition, a black layer (28) may be disposed on the diffusion layer (26). Meanwhile, the diffusion layer (26) requires a film layer (30) to be disposed on the diffusion layer, and a certain hardness is required to protect the semiconductor light emitting element (50), and accordingly, has the characteristic of low fluidity.

[0091] Meanwhile, when a diffusion layer (26) is arranged on a semiconductor light-emitting element (50), a step may occur on the upper surface of the diffusion layer (26) in the area overlapping the semiconductor light-emitting element (50). Accordingly, a step may also occur in the black layer (28) and the film layer (30), resulting in a lens effect. Therefore, there is a problem in that the uniformity of color is reduced due to the lens effect, and it is difficult to secure a viewing angle. There is a problem in that the step formed on the diffusion layer (26) does not disappear even after thermal curing.

[0092] In addition, in the internal technology, there is a problem that the diffusion layer (26) does not cover the area between the bumps (55) located under the semiconductor light-emitting element (50). Accordingly, air bubbles (V) may be generated in the unfilled area, which may lower the color sense or reduce the reliability of the element.

[0093]

[0094] Hereinafter, an embodiment for solving the above problem will be described.

[0095] Fig. 6 is a cross-sectional view of a display device including a semiconductor light-emitting element according to the first embodiment.

[0096] Referring to FIG. 6, an insulating layer (115) may be disposed on a substrate (110). The insulating layer (115) may be a photosensitive resist, but is not limited thereto.

[0097] A semiconductor light-emitting element (150) may be disposed on the insulating layer (115). The semiconductor light-emitting element (150) may include a plurality of elements. In addition, the semiconductor light-emitting element (150) may include a first semiconductor light-emitting element (151), a second semiconductor light-emitting element (152), and a third semiconductor light-emitting element (153). The first, second, and third semiconductor light-emitting elements may emit red, green, and blue colors, respectively, but are not limited thereto.

[0098] The above semiconductor light emitting element (150) can be electrically connected to the wiring (158) of the substrate (110) through a bump (155).

[0099] Meanwhile, an optical film (120) may be placed on the insulating layer (115) and the semiconductor light-emitting element (150). The optical film (120) may include a first diffusion layer (124), a second diffusion layer (126), a first black layer (128), a first film layer (130), and a second film layer (132).

[0100] The optical film (120) can be bonded to the substrate (110) by thermal compression. At this time, the first temperature at which thermal compression is performed may be 40°C to 100°C, but is not limited thereto. In addition, the pressure in thermal compression is 1 to 30 kgf / cm. 2 It may be, but is not limited to this. In addition, thermal curing may proceed at a second temperature after thermal compression. The second temperature may be higher than the first temperature, but is not limited thereto.

[0101] Therefore, the embodiment has a technical effect of simplifying the manufacturing process of a display device by bonding an optical film (120) formed as an integral body by thermocompression rather than forming a diffusion layer, a black layer, or a film layer individually on a substrate (110).

[0102]

[0103] The first diffusion layer (124) may be disposed on the insulating layer (115). The first diffusion layer (124) may be disposed to cover a portion of the semiconductor light-emitting device (150). The first diffusion layer (124) may be disposed to surround the semiconductor light-emitting device (150). The height of the upper surface of the first diffusion layer (124) may be less than or equal to the height of the upper surface of the semiconductor light-emitting device (150).

[0104] In addition, a second diffusion layer (126) may be disposed on the first diffusion layer (124). The second diffusion layer (126) may have a light scattering material dispersed in a matrix, and the matrix may include an optical coating material such as an epoxy-based, acrylic-based, silicone-based, or urethane-based material, but is not limited thereto. The light scattering material may scatter light emitted from the semiconductor light emitting element (150) to improve light efficiency. The light scattering material may include at least one of Zr, Si, Ti, Zn, BaS, and an oxide thereof. The surface of the light scattering material may be hydrophobicized. The light scattering material may undergo a silylation reaction through surface treatment, and the surface may have hydrophobic properties. Accordingly, the light scattering materials may not clump together, and thus dispersibility within the coating layer may be improved.

[0105] Meanwhile, the first diffusion layer (124) may not include a light scattering material. In addition, the composition of the first diffusion layer (124) may be different from the composition of the second diffusion layer (126).

[0106] The first diffusion layer (124) and the second diffusion layer (126) may be a material having viscoelasticity.

[0107] The flowability of the viscoelasticity of the first diffusion layer (124) may be higher than the flowability of the viscoelasticity of the second diffusion layer (126). The flowability of the viscoelasticity can be controlled by controlling the glass transition temperature and molecular weight of the first diffusion layer (124).

[0108] In the embodiment, the flowability of viscoelasticity can be evaluated by the loss coefficient Tan(δ) value. The larger the loss coefficient, the greater the flowability can be evaluated. Alternatively, in the embodiment, the flowability of viscoelasticity can be evaluated by the complex viscosity (η*(Pas)), but is not limited thereto. The larger the complex viscosity (η*(Pas)), the greater the flowability can be evaluated.

[0109] In an embodiment, the first diffusion layer (124) and the second diffusion layer (126) may be prepared in a semi-cured state, and then a thermal compression process may be performed at a first pressure while being heated at a first temperature on a substrate (110) on which a semiconductor light-emitting element (150) is mounted.

[0110] The above first temperature may be a temperature range in which the first diffusion layer (124) and the second diffusion layer (126) are melted, and the first diffusion layer (124) melted in a liquid state may have a predetermined viscoelasticity and may fill the bottom and side surfaces of the semiconductor light-emitting element (150). In an embodiment, the first diffusion layer (124) having high flowability may be semi-hardened by a thermal compression process to gap-fill the bottom surface of the semiconductor light-emitting element (150), thereby preventing voids from forming on the bottom surface of the semiconductor light-emitting element (150), thereby improving reliability.

[0111] Accordingly, in the embodiment, the first diffusion layer (124) can be filled in the bottom and side surfaces of the semiconductor light-emitting element (150) at a first temperature during the process of thermally compressing the optical film (120) onto the substrate (110). The viscoelastic material of the first diffusion layer (124) gap-fills the bottom surface of the semiconductor light-emitting element (150), thereby preventing a bubble trap occurring on the bottom surface of the semiconductor light-emitting element (150), thereby providing a technical effect of improving the reliability of the display device.

[0112] In addition, the first diffusion layer (124) has a higher viscoelastic flowability than the second diffusion layer (126), so that the upper surface of the first diffusion layer (124) can be formed to have a uniform height. Accordingly, the embodiment has a technical effect of preventing a step from occurring in an area vertically overlapping with the semiconductor light-emitting element (150).

[0113] In addition, the hardness of the second diffusion layer (126) may be higher than the hardness of the first diffusion layer (124). Accordingly, the embodiment has a technical effect of preventing the formation of a gap and preventing the formation of a step by the first diffusion layer having high viscoelastic flowability at a height below the upper surface of the semiconductor light-emitting device, and protecting the semiconductor light-emitting device (150) and improving its reliability by the second diffusion layer (126) disposed on the first diffusion layer (124).

[0114]

[0115] Fig. 7 is a drawing showing the optical film (120) in Fig. 6, and the manufacturing method of the first embodiment will be explained using this.

[0116] Referring to Fig. 7, a first diffusion layer (124) may be disposed on a lower protective film (122). In addition, a second diffusion layer (126) may be disposed on the first diffusion layer (124). The first diffusion layer (124) may not include a light scattering material. In addition, the second diffusion layer (126) may include a light scattering material. In addition, the first diffusion layer (124) and the second diffusion layer (126) may include an optical coating material such as an epoxy-based, acrylic-based, silicone-based, or urethane-based material, but are not limited thereto. The composition of the first diffusion layer (124) may be different from the composition of the second diffusion layer (126). In addition, the viscoelastic flowability of the first diffusion layer (124) may be greater than the viscoelastic flowability of the second diffusion layer (126). Additionally, the hardness of the second diffusion layer (126) may be greater than the hardness of the first diffusion layer (124).

[0117] Additionally, a first black layer (128) may be disposed on the second diffusion layer (126). The first black layer (128) may include a pigment or dye capable of producing a black color in the matrix. The first black layer (128) has a technical effect of preventing light from being scattered even in a non-illuminated state due to a light scattering material present in the second diffusion layer (126). Accordingly, the blackness of the display device may be improved.

[0118] In addition, a first film layer (130) and a second film layer (132) may be disposed on the first black layer (128). The first film layer (130) may integrate the black feeling. In addition, the second film layer (132) may include an irregular pattern and may diffusely reflect light from external light to reduce reflectivity.

[0119] The optical film (120) can be thermally bonded to the substrate (110) after the lower protective film (122) is removed.

[0120] Accordingly, the optical film (120) has a technical effect of simplifying the manufacturing process of a display device because the diffusion layer, black layer, and film layer are formed as an integral body and bonded to a substrate through thermal compression.

[0121] In particular, in the embodiment, the first diffusion layer (124) can be filled in the bottom and side surfaces of the semiconductor light-emitting element (150) at a first temperature during the process in which the optical film (120) is thermally compressed on the substrate (110). The viscoelastic material of the first diffusion layer (124) gap-fills the bottom surface of the semiconductor light-emitting element (150), thereby preventing a bubble trap occurring on the bottom surface of the semiconductor light-emitting element (150), thereby providing a technical effect of improving the reliability of the display device.

[0122] In addition, the first diffusion layer (124) has a higher viscoelastic flowability than the second diffusion layer (126), so that the upper surface of the first diffusion layer (124) can be formed to have a uniform height. Accordingly, the embodiment has a technical effect of preventing a step from occurring in an area vertically overlapping with the semiconductor light-emitting element (150).

[0123] In addition, the hardness of the second diffusion layer (126) may be higher than the hardness of the first diffusion layer (124). Accordingly, the embodiment has a technical effect of preventing the formation of a gap and preventing the formation of a step by the first diffusion layer having high viscoelastic flowability at a height below the upper surface of the semiconductor light-emitting device, and protecting the semiconductor light-emitting device (150) and improving its reliability by the second diffusion layer (126) disposed on the first diffusion layer (124).

[0124]

[0125] Next, Fig. 8 is a cross-sectional view of a display device including a semiconductor light-emitting element according to a second embodiment. The second embodiment may employ the technical features of the first embodiment, and the main features of the second embodiment will be described below.

[0126] Referring to FIG. 8, an insulating layer (115) may be disposed on a substrate (110), and a semiconductor light-emitting element (150) may be disposed on the insulating layer (115). In addition, a first diffusion layer (124) may be disposed on the insulating layer (115) to surround the semiconductor light-emitting element (150). The height of the first diffusion layer (124) may be less than or equal to the height of the semiconductor light-emitting element (150).

[0127] In addition, a black diffusion layer (135) may be disposed on the first diffusion layer (124). The viscoelastic flowability of the first diffusion layer (124) may be greater than the viscoelastic flowability of the black diffusion layer (135). Accordingly, the first diffusion layer (124) can fill the side and bottom surfaces of the semiconductor light-emitting element (150) during thermocompression, and there is a technical effect of preventing voids.

[0128] The above black diffusion layer (135) may include an optical coating material such as an epoxy-based, acrylic-based, silicone-based, or urethane-based material, but is not limited thereto. In addition, the black diffusion layer (135) may include a light scattering material. The light scattering material may include at least one of Zr, Si, Ti, Zn, BaS, and oxides thereof.

[0129] In addition, the black diffusion layer (135) may include a pigment or dye capable of producing a black color. Accordingly, the black diffusion layer (135) may diffuse light from the semiconductor light-emitting element (150) through a light scattering material, and may improve the blackness when not lit by including a black pigment or dye.

[0130] In addition, a plurality of grooves (137) may be formed on the upper surface of the black diffusion layer (135) (see FIG. 9). The grooves (137) allow the upper surface of the black diffusion layer (135) to have a random surface, and even without a separate film layer being disposed, there is a technical effect of reducing the reflectance by diffusely reflecting light from external light.

[0131]

[0132] FIG. 9 is a drawing showing the second optical film (140) in FIG. 8, and the manufacturing method of the second embodiment will be described using this.

[0133] Referring to FIG. 9, the second optical film (140) may include a lower protective film (122), a first diffusion layer (124), a black diffusion layer (135), and an upper protective film (138).

[0134] The viscoelastic flowability of the first diffusion layer (124) may be greater than the viscoelastic flowability of the black diffusion layer (135). In addition, the hardness of the black diffusion layer (135) may be greater than the hardness of the first diffusion layer (124).

[0135] The above black diffusion layer (135) may have a groove (137) formed by the pattern portion (137a) of the temporary protective film (138). The lower protective film (122) may be removed when the second optical film (140) is bonded to the substrate (110). In addition, the temporary protective film (138) may be removed after the second optical film (140) is thermally cured and then thermally compressed on the substrate (110).

[0136] According to the second embodiment, the viscoelastic flowability of the first diffusion layer (124) may be greater than the viscoelastic flowability of the black diffusion layer (135). Accordingly, the first diffusion layer (124) can fill the side and bottom surfaces of the semiconductor light-emitting element (150) during thermocompression, and there is a technical effect of preventing voids.

[0137] In addition, a plurality of grooves (137) can be formed on the upper surface of the black diffusion layer (135), and the upper surface of the black diffusion layer (135) has a random surface due to the grooves (137), and even if a separate film layer is not arranged, there is a technical effect of being able to reduce the reflectance by diffusely reflecting light from external light.

[0138]

[0139] Next, Fig. 10 is a cross-sectional view of a semiconductor light-emitting device and a display device including the same according to a third embodiment. The third embodiment may adopt the features of the first or second embodiment, and the main features of the third embodiment will be described below.

[0140] The third embodiment includes a second diffusion layer (126) on a substrate (110), and the second diffusion layer (126) may include a second-first diffusion layer (126a) and a second-second diffusion layer (126b).

[0141] The above second diffusion layer (126) may include a predetermined diffusion agent.

[0142]

[0143] The viscoelastic flowability of the above-mentioned 2-1 diffusion layer (126a) may be higher than the viscoelastic flowability of the above-mentioned 2-2 diffusion layer (126b), and thus, there is a technical effect of preventing a step occurring in the process of molding a semiconductor light-emitting device and preventing voids from being formed on the bottom surface of the semiconductor light-emitting device.

[0144] Also, referring to FIG. 10, a first black layer (128) may be disposed on the second diffusion layer (126). The first black layer (128) may include a plurality of grooves (137). The grooves (137) may be randomly disposed. Accordingly, the third embodiment has a technical effect in that the first black layer (128) can diffusely reflect external light without a separate film layer, thereby reducing reflectance.

[0145]

[0146] Next, Fig. 11 is a cross-sectional view of a display device including a semiconductor light-emitting element according to a fourth embodiment. The fourth embodiment may employ the technical features of the first to third embodiments, and the main features of the fourth embodiment will be described below.

[0147] Referring to FIG. 11, an insulating layer (115) is disposed on a substrate (110), and a semiconductor light-emitting element (150) can be disposed on the insulating layer (115).

[0148] Additionally, a second black layer (129) may be arranged on the insulating layer (115) to surround the semiconductor light-emitting element (150). The second black layer (129) may include a pigment or dye that implements a black color. The second black layer (129) may cover a bump (155) connecting the semiconductor light-emitting element (150) and the substrate (110).

[0149] The height of the upper surface of the second black layer (129) may be greater than or equal to the height of the upper surface of the bump (155). The second black layer (129) may be formed below the height of the semiconductor light emitting element (150). Accordingly, the fourth embodiment has a technical effect in that the second black layer (129) covers the bump (155), thereby blocking light reflected from the metal bump (155), thereby improving visibility and enhancing the blackness.

[0150] Additionally, a second diffusion layer (126) may be disposed on the second black layer (129). The second diffusion layer (126) may include a light scattering material to diffuse light from the semiconductor light-emitting element (150). The viscoelastic flowability of the second black layer (129) may be greater than the viscoelastic flowability of the second diffusion layer (126).

[0151] Accordingly, the upper surface of the second black layer (129) can be formed uniformly. In addition, the hardness of the second diffusion layer (126) can be greater than the hardness of the second black layer. Therefore, the second diffusion layer (126) disposed on the second black layer (129) can be disposed to have a uniform height without any steps.

[0152] Accordingly, the fourth embodiment has a technical effect of minimizing the lens effect by not forming a step difference in the molding layer on the semiconductor light-emitting element, and improving the color uniformity and viewing angle.

[0153] Additionally, a first black layer (128) may be placed on the second diffusion layer (126). The first black layer (128) may include a plurality of grooves (137), thereby allowing external light to be diffusely reflected to reduce reflectivity.

[0154]

[0155] Next, Fig. 12 is a cross-sectional view of a display device including a semiconductor light-emitting element according to a fifth embodiment. The fifth embodiment may employ the technical features of the first to fourth embodiments, and the main features of the fifth embodiment will be described below.

[0156] Referring to FIG. 12, an insulating layer (115) is disposed on a substrate (110), and a semiconductor light-emitting element (150) can be disposed on the insulating layer (115).

[0157] In addition, a second diffusion layer (126) may be arranged on the insulating layer (115) to surround the semiconductor light emitting element (150). The second diffusion layer (126) may include an optical coating material such as an epoxy-based, acrylic-based, silicone-based, or urethane-based material, but is not limited thereto. In addition, the second diffusion layer (126) may include a light scattering material. The light scattering material may include at least one of Zr, Si, Ti, Zn, BaS, and an oxide thereof.

[0158] Meanwhile, the second diffusion layer (126) may include a second-first diffusion layer (126a) and a second-second diffusion layer (126b) disposed on the second-first diffusion layer (126a). The second-first diffusion layer (126a) and the second-second diffusion layer (126b) may include a light scattering material. In addition, the second-first diffusion layer (126a) and the second-second diffusion layer (126b) may have different compositions. Accordingly, the viscoelastic flowability of the second-first diffusion layer (126a) may be greater than the viscoelastic flowability of the second-second diffusion layer (126b). In addition, the hardness of the second-second diffusion layer (126b) may be greater than the hardness of the second-first diffusion layer (126a).

[0159] In addition, the fifth embodiment may further include the second black layer (129) of the fourth embodiment under the second-first diffusion layer (126a), but is not limited thereto.

[0160] Meanwhile, the 2-1 diffusion layer (126a) may be arranged at a height lower than the upper surface of the semiconductor light-emitting element (150). The boundary between the 2-1 diffusion layer (126a) and the 2-2 diffusion layer (126b) may be formed at a height lower than the upper surface of the semiconductor light-emitting element (150).

[0161] Accordingly, the lower surface of the semiconductor light-emitting element (150), i.e., the area between the bumps (155) connected to the electrodes of the semiconductor light-emitting element, can be filled by the second-first diffusion layer (126a) having high viscoelastic flowability. In addition, the upper surface of the second-first diffusion layer (126a) can have a uniform height.

[0162] Accordingly, the upper surface of the 2-2 diffusion layer (126b) disposed on the 2-1 diffusion layer (126a) can also have a uniform height. Accordingly, the fifth embodiment can prevent a step from occurring on the semiconductor light-emitting element, thereby minimizing the lens effect, thereby improving color uniformity, and has the technical effect of improving the viewing angle.

[0163] Additionally, a first black layer (128) may be placed on the second diffusion layer (126). The first black layer (128) may include a plurality of grooves (137), thereby allowing external light to be diffusely reflected to reduce reflectivity.

[0164]

[0165] Next, Fig. 13 is a cross-sectional view of a display device including a semiconductor light-emitting element according to a sixth embodiment. The sixth embodiment may employ the technical features of the first to fifth embodiments, and the main features of the sixth embodiment will be described below.

[0166] Referring to FIG. 13, an insulating layer (115) may be disposed on a substrate (110). A semiconductor light-emitting element (150) may be disposed on the insulating layer (115). In addition, a first diffusion layer (124) may be disposed on the insulating layer (115) to surround the semiconductor light-emitting element (150). The first diffusion layer (124) may not include a light scattering material. The height of the upper surface of the first diffusion layer (124) may be less than or equal to the height of the semiconductor light-emitting element (150).

[0167] In addition, a second black layer (129) may be disposed on the first diffusion layer (124). The second black layer (129) may be disposed to surround the semiconductor light emitting elements (150). The second black layer (129) may be disposed below a height of the upper surface of the semiconductor light emitting elements (150). The second black layer (129) may be disposed higher than the bump (155) connected to the electrode of the semiconductor light emitting element (150). Therefore, the sixth embodiment has a technical effect in that the second black layer (129) can improve the blackness by absorbing light reflected from the bump.

[0168] Additionally, a second diffusion layer (126) may be disposed on the second black layer (129). The second diffusion layer (126) may diffuse light emitted from the upper surface of the semiconductor light-emitting element (150).

[0169] Meanwhile, the viscoelastic flowability of the first diffusion layer (124) may be higher than the viscoelastic flowability of the second diffusion layer (126). Accordingly, the first diffusion layer (124) has a technical effect of preventing the occurrence of a gas trap by filling the bottom surface of the semiconductor light-emitting element (150). In addition, the upper surface of the first diffusion layer (124) is formed uniformly, thereby having a technical effect of preventing the occurrence of a step in the molding layer disposed on the semiconductor light-emitting element.

[0170] Additionally, a first black layer (128) may be placed on the second diffusion layer (126). The first black layer (128) may include a plurality of grooves (137), thereby allowing external light to be diffusely reflected to reduce reflectivity.

[0171]

[0172] Next, Fig. 14 is a graph showing the flowability of viscoelasticity with respect to temperature for the diffusion layer used in the example.

[0173] Referring to Fig. 14, (a) may represent a first diffusion layer, and (b) may represent a second diffusion layer.

[0174] Meanwhile, the glass transition temperatures of the first diffusion layer and the second diffusion layer may be different. Furthermore, the molecular weights of the first diffusion layer and the second diffusion layer may be different. Accordingly, the viscoelastic flowability of the first diffusion layer (a) and the second diffusion layer (b) may differ depending on the temperature.

[0175] Depending on the temperature (T1), the viscoelastic flowability (Tan(δ)1) of the first diffusion layer may be greater than the viscoelastic flowability (Tan(δ)2) of the second diffusion layer. Accordingly, in the embodiment, when the optical film is thermo-compression-bonded with the substrate, the viscoelastic flowability of the first diffusion layer becomes greater at the thermo-compression temperature, so that the first diffusion layer can fill the bottom surface of the semiconductor light-emitting element to prevent air bubbles from being trapped, and there is a technical effect of preventing a step from occurring in the molding layer on the semiconductor light-emitting element.

[0176]

[0177] A display device including a semiconductor light-emitting element according to an embodiment has a technical effect of preventing a step from occurring in a molding layer on the semiconductor light-emitting element.

[0178] Additionally, the embodiment has a technical effect that can prevent reduction in light uniformity and viewing angle.

[0179] For example, in the embodiment, a diffusion layer having high viscoelastic flowability is arranged to surround a semiconductor light-emitting element, so that the upper surface of the diffusion layer is formed to have a uniform height, thereby preventing a step from occurring on the semiconductor light-emitting element, thereby preventing a reduction in light uniformity and viewing angle.

[0180] In addition, the embodiment has a technical effect of preventing a photo-trap occurring on the bottom surface of a semiconductor light-emitting device.

[0181] For example, the embodiment can improve reliability by arranging a diffusion layer with high viscoelastic flowability to surround a semiconductor light-emitting element and fill the space between bumps, i.e., the bottom surface of the semiconductor light-emitting element, to prevent a gap between bumps.

[0182] Additionally, the embodiment has a technical effect that can improve the black feeling of a display device.

[0183] For example, the embodiment can improve the blackness by placing a black layer under a semiconductor light-emitting element to reduce light reflection by bumps.

[0184] In addition, the embodiment has a technical effect of reducing reflectivity by diffusely reflecting light from external light even without a separate film layer being placed.

[0185] For example, the embodiment can form random grooves on the surface of the black layer to diffusely reflect light from external light.

[0186] In addition, the embodiment has a technical effect that can simplify the manufacturing process of a display device.

[0187] For example, the embodiment can manufacture a display device by integrally forming an optical film including a diffusion layer and a black layer and then thermally pressing and thermally curing the optical film on a substrate, thereby simplifying the manufacturing process.

[0188]

[0189] Although the present invention has been described above with reference to embodiments thereof, it will be readily understood by those skilled in the art that various modifications and changes to the present invention can be made without departing from the spirit and scope of the present invention as set forth in the claims below.

[0190]

[0191] The embodiments may be applied to, but are not limited to, display devices. For example, the embodiments may be applied to, but are not limited to, a micro-LED display using an inorganic light-emitting element, an LED, as a light-emitting pixel.

Claims

1. Substrate; A semiconductor light emitting element disposed on the above substrate; A diffusion layer covering the semiconductor light emitting element; and It includes a first black layer disposed on the above diffusion layer, The above diffusion layer includes a first diffusion layer surrounding the semiconductor light-emitting element and a second diffusion layer disposed on the first diffusion layer, A display device including a semiconductor light emitting element, wherein the viscoelastic flowability of the first diffusion layer is greater than the viscoelastic flowability of the second diffusion layer.

2. In paragraph 1, A display device including a semiconductor light-emitting element, wherein the height of the upper surface of the first diffusion layer is less than or equal to the height of the upper surface of the semiconductor light-emitting element.

3. In paragraph 1, The above first diffusion layer does not include a light scattering material, A display device including a semiconductor light-emitting element, wherein the second diffusion layer includes a light scattering material.

4. In paragraph 1, A display device including a semiconductor light-emitting element, wherein the first diffusion layer and the second diffusion layer include a light scattering material.

5. In paragraph 2, A display device including a semiconductor light emitting element, further comprising a second black layer disposed between the first diffusion layer and the second diffusion layer.

6. In paragraph 5, A display device including a semiconductor light-emitting element, wherein the height of the upper surface of the second black layer is less than or equal to the height of the upper surface of the semiconductor light-emitting element.

7. In paragraph 1, A display device including a semiconductor light emitting element, wherein the first black layer includes a plurality of grooves on the upper surface.

8. In paragraph 1, A display device including a semiconductor light emitting element, further comprising a film layer disposed on the first black layer.

9. In paragraph 2, A display device including a semiconductor light-emitting element, wherein the first diffusion layer includes a pigment or dye that implements a black color.

10. In paragraph 1, The above semiconductor light emitting element is connected to the substrate through a bump, A display device including a semiconductor light emitting element, wherein the first diffusion layer fills the space between the bumps.

11. In paragraph 1, A display device including a semiconductor light emitting element, wherein the hardness of the second diffusion layer is greater than the hardness of the first diffusion layer.

12. Substrate; A semiconductor light emitting element disposed on the above substrate; A diffusion layer covering the semiconductor light emitting element; and A black diffusion layer disposed on the above diffusion layer, The viscoelastic flowability of the above diffusion layer is greater than the viscoelastic flowability of the above black diffusion layer, A display device including a semiconductor light-emitting element, wherein the black diffusion layer includes a light scattering material and a dye or pigment that implements a black color.

13. In paragraph 12, A display device including a semiconductor light-emitting element, wherein the height of the upper surface of the diffusion layer is less than or equal to the height of the upper surface of the semiconductor light-emitting element.

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