Semiconductor device and electronic device
By incorporating heat dissipation structures and dielectric films into semiconductor devices, the problem of heat concentration during high-power operation is solved, achieving the effects of reduced thermal resistance and increased bandwidth.
Patent Information
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- HUAWEI TECH CO LTD
- Filing Date
- 2024-12-16
- Publication Date
- 2026-05-15
AI Technical Summary
Existing semiconductor devices have high thermal resistance when operating at high power, which leads to increased temperature and affects performance.
By setting a heat dissipation structure and a thin dielectric film on the substrate, heat is quickly transferred to the heat dissipation structure through the dielectric film and spread over a large area along its extension direction. Combined with the use of high thermal conductivity materials, heat concentration is reduced.
It effectively reduces the thermal resistance of semiconductor devices, prevents overheating, and maintains high bandwidth performance, with a 44% reduction in thermal resistance and an 85% increase in bandwidth.
Smart Images
Figure CN2024139723_15052026_PF_FP_ABST
Abstract
Description
Semiconductor devices and electronic equipment
[0001] This application claims priority to Chinese Patent Application No. 202410684879.X, filed on May 29, 2024, entitled "Semiconductor Device and Electronic Equipment", the entire contents of which are incorporated herein by reference. Technical Field
[0002] This application relates to the field of semiconductor technology, and in particular to a semiconductor device and electronic device. Background Technology
[0003] In the fields of optical communication and optical interconnection, semiconductor devices (such as lasers, modulators, and detectors) are indispensable components. As one of the core components of transceiver modules, semiconductor devices have a significant impact on the overall performance of the entire optical communication and optical interconnection system.
[0004] Over the years, with the continuous evolution of optical communication and optical interconnect systems, the power requirements for semiconductor devices have become increasingly stringent. However, higher power semiconductor devices inevitably generate a large amount of heat. Currently, semiconductor devices have relatively high thermal resistance, which leads to higher operating temperatures and affects performance. Summary of the Invention
[0005] This application provides a semiconductor device and electronic device that can reduce the thermal resistance of the semiconductor device, thereby reducing the operating temperature of the semiconductor device.
[0006] In a first aspect, this application provides a semiconductor device, including a substrate structure, a first electrode, a second electrode, an active region, a heat dissipation structure, and a first dielectric film. The substrate structure includes a substrate layer and a ridge, the thickness direction of the substrate layer being a first direction. The substrate layer has an upper surface and a lower surface disposed opposite to each other along the first direction, and the ridge protrudes from the upper surface along the first direction. The active region is disposed within the substrate structure and has a heat-generating area. The first electrode is disposed below the lower surface, and the second electrode is disposed at the upper end of the ridge. The heat dissipation structure is located between the upper surface and the second electrode, the extension direction of the heat dissipation structure being perpendicular to the first direction, and the ridge penetrating the heat dissipation structure. The first dielectric film is disposed between the substrate structure and the heat dissipation structure.
[0007] This application reduces the thermal resistance of semiconductor devices by setting a heat dissipation structure. When heat is generated in the heat-generating area of the active region, the heat can be conducted to the heat dissipation structure through the substrate structure and the first dielectric film. Since the heat dissipation structure is laid on top of the upper surface, it can spread heat over a large area, thereby enhancing the heat dissipation effect of the semiconductor device. In addition, the inventors have discovered that the side of the semiconductor device away from the first electrode has a higher temperature than the side facing the first electrode. This is because the first electrode is usually in contact with the substrate during use. Due to the good heat dissipation performance of the substrate, the heat on the side facing the first electrode is quickly transferred to the substrate. However, the heat on the side away from the first electrode cannot be quickly transferred to the substrate, resulting in excessive heat concentration between the heat-generating area and the second electrode, causing the temperature of the semiconductor device to rise. Based on this, this application sets the heat dissipation structure on the side of the substrate layer closer to the second electrode, which allows the heat generated in the heat-generating area to be quickly transferred to the heat dissipation structure. Subsequently, the heat is spread over a large area along the extension direction of the heat dissipation structure and then gradually conducted to the substrate through the substrate layer. This can prevent excessive heat concentration in one area and avoid the semiconductor device from overheating.
[0008] In some implementations of this application, the first dielectric film is disposed on the upper surface and the sidewall of the ridge, the heat dissipation structure is spaced a certain distance from the second electrode, and the heat dissipation structure is in contact with the first dielectric film disposed on the upper surface and the first dielectric film disposed on the sidewall of the ridge, respectively.
[0009] In some implementations of this application, the active region divides the substrate structure into a first substrate and a second substrate arranged sequentially along a first direction, with the first substrate located between the active region and the first electrode, and the second substrate located between the active region and the second electrode.
[0010] In some implementations of this application, the first electrode is an N-face electrode, the first substrate is an N-type substrate, the second electrode is a P-face electrode, and the second substrate is a P-type substrate.
[0011] In some implementations of this application, the first electrode is a P-side electrode, the first substrate is a P-type substrate, the second electrode is an N-side electrode, and the second substrate is an N-type substrate.
[0012] In some implementations of this application, the active region is located within a substrate layer, the first substrate includes a portion of the substrate layer, and the second substrate includes another portion of the substrate layer and a ridge.
[0013] In some implementations of this application, the active region is located within the ridge, the first substrate includes a portion of the ridge and a substrate layer, and the second substrate includes another portion of the ridge.
[0014] In some implementations of this application, the heat dissipation structure is made of one or more combinations of Au, Cn, and Si.
[0015] In some implementations of this application, the thickness of the heat dissipation structure is 5nm-5000nm, and the thermal conductivity is 10-500W / m / C.
[0016] In some implementations of this application, a second dielectric film is provided between the heat dissipation structure and the second electrode, and the heat dissipation structure and the second electrode are respectively in contact with the second dielectric film.
[0017] In some implementations of this application, the thickness of the second dielectric film is greater than the thickness of the first dielectric film.
[0018] In some implementations of this application, the first dielectric film is made of one or more combinations of SiO2, Si3N4, Al2O3, and AlN.
[0019] In some implementations of this application, the thickness of the first dielectric film is 5nm-500nm, the dielectric constant and refractive index are 1-3.2, and the thermal conductivity is 1-500W / m / C.
[0020] In some implementations of this application, the second dielectric film is made of one or more combinations of SiO2, Si3N4, and Al2O3.
[0021] In some implementations of this application, the thickness of the second dielectric film is 100nm-5000nm, the dielectric constant and refractive index are 1-3, and the thermal conductivity is 0.001-500W / m / C.
[0022] Secondly, this application provides an electronic device, including a semiconductor device as described in the first aspect and a housing, wherein the semiconductor device is disposed within the housing. Attached Figure Description
[0023] Figure 1 illustrates the different generations of access network evolution;
[0024] Figure 2 shows the relationship between chip cavity length, bandwidth, and chip thermal resistance;
[0025] Figure 3 shows a cross-sectional view of a laser in the prior art;
[0026] Figure 4 shows the relationship between dielectric film thickness and bandwidth and thermal resistance;
[0027] Figure 5 shows the relationship between several dielectric film materials and bandwidth and thermal resistance;
[0028] Figure 6 shows the relationship between the width of the electrode in the trench and the bandwidth and thermal resistance;
[0029] Figure 7 shows a cross-sectional view of a ridge waveguide laser provided in one embodiment of this application;
[0030] Figure 8 shows a cross-sectional view of a ridge waveguide laser provided in another embodiment of this application;
[0031] Figure 9 shows a cross-sectional view of a buried laser provided in one embodiment of this application;
[0032] Figure 10 shows a cross-sectional view of a buried laser provided in another embodiment of this application;
[0033] Figure 11 shows a thermal simulation diagram of the prior art and this application;
[0034] Figure 12 shows a comparison of bandwidth curves between the prior art and this application. Detailed Implementation
[0035] To make the objectives, technical solutions, and advantages of this application clearer, the embodiments of this application will be described in further detail below with reference to the accompanying drawings.
[0036] This application provides a semiconductor device that can be widely used in optical communication equipment and optical interconnect devices. The semiconductor device can be a laser, modulator, or detector, and this application does not limit its application to this specific type. The following description uses a laser as an example to illustrate this application.
[0037] Lasers are now widely used in optical communication systems such as access networks, data centers, and wireless networks. As optical communication speeds increase, the demands on laser bandwidth and output power also rise. For example, Figure 1 illustrates the different generations of access network evolution. As shown in Figure 1, over time, Passive Optical Networks (PONs) have evolved from the early 2.5G to 10GPON, and then to 50GPON; therefore, the demand for laser bandwidth also increases accordingly.
[0038] To improve laser bandwidth, existing technologies generally reduce the cavity length of laser chips. Practice has shown that a shorter cavity length results in a larger bandwidth, but a shorter cavity length also leads to a significant increase in chip thermal resistance. Figure 2 illustrates the relationship between chip cavity length, bandwidth, and thermal resistance. The left arrow in Figure 2 shows the relationship between cavity length and bandwidth, while the right arrow shows the relationship between cavity length and thermal resistance. As shown by the right arrow in Figure 2, if the cavity length is reduced from 300 micrometers to 150 micrometers, the thermal resistance doubles. This leads to at least a doubling of the junction temperature, resulting in increasingly severe heat generation during chip operation and consequently, a deterioration in output power.
[0039] Figure 3 shows a cross-sectional view of a ridge waveguide laser 100a in the prior art. As shown in Figure 3, the laser 100a includes an N-surface electrode 2a, an N-substrate 13a, an active region 4a, a P-substrate 14a, and a P-surface electrode 3a arranged sequentially from bottom to top along the X direction in Figure 3. The P-substrate 14a is etched into a ridge waveguide shape, and the sidewalls of the ridge waveguide and the upper surface 112a of the P-substrate 14a are covered with a dielectric film 7a. The dielectric film 7a mainly serves two purposes: acting as an insulating layer and minimizing the parasitic capacitance of the P-substrate 14a. The active region 4a has a heat-generating region (as shown in region S1 in Figure 3). When the laser 100a is operating, the heat-generating region S1 generates heat. When the thermal resistance of the laser 100a is high, the heat in the laser 100a is difficult to conduct outward, resulting in an excessively high operating temperature of the laser 100a.
[0040] To address the aforementioned issue of excessively high laser operating temperature, three alternative implementation methods are provided below, which can reduce the thermal resistance of the laser and thus lower its operating temperature.
[0041] In the first optional implementation, the laser structure is basically the same as that shown in Figure 3, except that the thickness of the dielectric film 7a is reduced. Figure 4 shows the relationship between the thickness of the dielectric film 7a and the bandwidth and thermal resistance. The left arrow curve in Figure 4 shows the relationship between the thickness of the dielectric film 7a and the bandwidth, while the right arrow curve shows the relationship between the thickness of the dielectric film 7a and the thermal resistance. As shown by the right arrow curve in Figure 4, the smaller the thickness of the dielectric film 7a, the smaller the corresponding thermal resistance of the laser. This is because when the thickness of the dielectric film 7a decreases, the heat generated in the heat-generating region S1 can be quickly transferred through the dielectric film 7a to the P-surface electrode 3a and dissipated through the P-surface electrode 3a. While this can reduce the operating temperature of the laser, the left arrow curve in Figure 4 also shows that the smaller the thickness of the dielectric film 7a, the smaller the corresponding bandwidth. This is because the smaller the thickness of the dielectric film 7a, the larger the corresponding parasitic capacitance, resulting in a smaller bandwidth. Therefore, reducing the thermal resistance by decreasing the thickness of the dielectric film 7a contradicts the requirement for a large bandwidth.
[0042] In the second optional implementation, the laser structure is basically the same as that shown in Figure 3, the only difference being that a dielectric material with higher heat dissipation is used to fabricate the dielectric film 7a. Figure 5 shows the relationship between several dielectric film materials and bandwidth and thermal resistance. The left arrow curve in Figure 5 shows the relationship between the dielectric film material and bandwidth, while the right arrow curve shows the relationship between the dielectric film material and thermal resistance. As shown by the right arrow curve in Figure 5, the better the heat dissipation of the dielectric film material, the smaller the corresponding thermal resistance of the laser. This is because the better the heat dissipation effect of the dielectric film 7a, the easier it is for the heat generated in the heat-generating region S1 to be transferred to the P-surface electrode 3a through the dielectric film 7a and dissipated through the P-surface electrode 3a. While this can reduce the operating temperature of the laser, the left arrow curve in Figure 5 also shows that the better the heat dissipation of the dielectric film material, the smaller the corresponding bandwidth. This is because dielectric film materials with good heat dissipation are generally high dielectric constant materials, which leads to an increase in the capacitance of the laser itself, and simultaneously degrades the mode field confinement factor, causing bandwidth degradation. Therefore, reducing thermal resistance by using a dielectric material with higher heat dissipation contradicts the requirement for large bandwidth.
[0043] In the third optional embodiment, the laser structure is basically the same as that shown in Figure 3, except that the width of the in-channel electrode is increased (as shown by dimension L1 in Figure 3). Figure 6 shows the relationship between the width of the in-channel electrode and the bandwidth and thermal resistance. In this embodiment, the P-side electrode is the in-channel electrode. The left arrow curve in Figure 6 shows the relationship between the width of the P-side electrode 3a and the bandwidth, and the right arrow curve in Figure 6 shows the relationship between the width of the P-side electrode 3a and the thermal resistance. As shown by the right arrow curve in Figure 6, the larger the width of the P-side electrode 3a, the smaller the corresponding thermal resistance of the laser. This is because when the width of the P-side electrode 3a increases, the heat generated in the heat-generating region S1 is more easily diffused laterally through the P-side electrode 3a, resulting in a smaller thermal resistance. Although this can reduce the operating temperature of the laser, the left arrow curve in Figure 6 also shows that the larger the width of the P-side electrode 3a, the smaller the corresponding bandwidth. This is because increasing the width of the P-side electrode 3a also significantly increases the capacitance, causing bandwidth degradation. Therefore, reducing thermal resistance by increasing the width of the in-channel electrode contradicts the requirement for a large bandwidth.
[0044] In summary, the methods for reducing thermal resistance provided in the first, second, and third optional embodiments above are in significant conflict with increasing bandwidth. If the resistance is reduced, bandwidth must be sacrificed, and it is difficult to achieve both high bandwidth and low thermal resistance.
[0045] To address the aforementioned issues, this application also provides a semiconductor device that can reduce thermal resistance while ensuring a large bandwidth. The structure of this semiconductor device is described below using a laser 100 as an example.
[0046] Figure 7 shows a schematic diagram of the laser 100. Referring to Figure 7, the laser 100 provided in this application includes a substrate structure 1, an electrode 2 (as an example of a first electrode), an electrode 3 (as an example of a second electrode), an active region 4, a heat dissipation structure 5, and a dielectric film 6 (as an example of a first dielectric film). The substrate structure 1 includes a substrate layer 11 and a ridge 12. The substrate layer 11 extends along the Y direction in Figure 7, and the thickness direction of the substrate layer 11 is the X direction in Figure 7 (as an example of a first direction), which is perpendicular to the Y direction. The substrate layer 11 has an upper surface 112 and a lower surface 111 arranged opposite to each other along the X direction. The ridge 12 is disposed on the upper surface 112 and protrudes from the upper surface 112 along the X direction. The active region 4 is disposed within the substrate structure 1, and the active region 4 has a heat-generating region (as shown in region S in Figure 7). The electrode 2 is disposed below the lower surface 111, and the electrode 3 is disposed at the upper end of the ridge. The heat dissipation structure 5 is located between the upper surface 112 and the electrode 3, and extends along the Y direction. The ridge 12 penetrates the heat dissipation structure 5 along the X direction. The dielectric film 6 is disposed between the substrate structure 1 and the heat dissipation structure 5, and both the heat dissipation structure 5 and the substrate structure 1 are in contact with the dielectric film 6.
[0047] When the laser 100 operates, the heat generated in the heating region S dissipates in both vertical and horizontal directions. The downward heat dissipation path is shown by arrow Q1 in Figure 7, and the upward heat dissipation path is shown by arrow Q2 in Figure 7. The inventors discovered that in conventional lasers, the temperature on the side away from electrode 2 is higher than the temperature on the side facing electrode 2. This is because, during laser operation, electrode 2 is typically in contact with the substrate located below it. Due to the substrate's good heat dissipation performance, the heat in heat dissipation path Q1 is quickly transferred to the substrate. However, the heat in heat dissipation path Q2 cannot be quickly transferred to the substrate, resulting in higher thermal resistance and excessive heat concentration between the heating region S and electrode 3, causing the temperature of the semiconductor device to rise.
[0048] This application provides a heat dissipation structure 5 and a thin dielectric film 6 above the substrate layer 11. This allows heat in the heat dissipation path Q2 to be quickly transferred to the heat dissipation structure 5 through the dielectric film 6. Since the heat dissipation structure 5 is laid above the upper surface 112 along the Y direction, the heat dissipation structure 5 can spread heat over a large area along the Y direction. Subsequently, the heat in the heat dissipation structure 5 is gradually conducted downward through the substrate layer 11 to the substrate. This can reduce the thermal resistance of the laser, prevent excessive heat concentration in one area, and avoid the laser temperature from becoming too high.
[0049] In this application, the main function of the heat dissipation structure 5 is to spread the heat emitted from the heat-generating area S over a large area. Therefore, the heat dissipation structure 5 is preferably made of a material with high thermal conductivity and good heat dissipation effect, and the wider the width (as shown by dimension L2 in Figure 7) and the thicker the heat dissipation structure 5, the better. For example, the heat dissipation structure 5 can be made of one or more combinations of Au, Cn, and Si, the thickness of the heat dissipation structure 5 can be 5nm-5000nm, and the thermal conductivity can be 10-500W / m / C.
[0050] The dielectric film 6 can be made of one or more combinations of SiO2, Si3N4, Al2O3, and AlN. The thickness of the dielectric film 6 can be 5 nm to 500 nm, the dielectric constant and refractive index can be 1 to 3.2, and the thermal conductivity can be 1 to 500 W / m / C. The main function of the dielectric film 6 is to act as an insulating layer and to quickly conduct the heat emitted from the heat-generating region S to the heat dissipation structure 5. Therefore, the dielectric film 6 can be made of an extremely thin, highly heat-dissipating dielectric. For example, the thickness of the dielectric film 6 can be 5 nm, 50 nm, or 100 nm.
[0051] Furthermore, the dielectric film 6 is disposed on the upper surface 112 and the sidewall of the ridge 12. The heat dissipation structure 5 is in contact with the dielectric film 6 disposed on the upper surface 112 and the dielectric film 6 disposed on the sidewall of the ridge 12, respectively. The upper surface of the heat dissipation structure 5 is spaced apart from the electrode 3 by a certain distance. In some embodiments, referring to FIG7, a dielectric film 7 (as an example of a second dielectric film) is disposed in the spaced area between the upper surface of the heat dissipation structure 5 and the electrode 3. The heat dissipation structure 5 and the electrode 3 are in contact with the dielectric film 7, and the thickness of the dielectric film 7 is greater than the thickness of the dielectric film 6. In other embodiments, referring to FIG8, it is not necessary to provide a dielectric film 7 between the heat dissipation structure 5 and the electrode 3. Only air (with a thermal conductivity of about 0.001) needs to exist between the heat dissipation structure 5 and the electrode 3. In this case, the electrode 3 needs to be fabricated using an air bridge process. By setting a spaced distance or a dielectric film 7 with a large thickness between the upper surface of the heat dissipation structure 5 and the electrode 3, the minimum parasitic capacitance can be guaranteed, and a large bandwidth can be provided, thereby achieving both a reduction in the thermal resistance of the half-laser and a large bandwidth.
[0052] The dielectric film 7 can be made of one or more combinations of SiO2, Si3N4, and Al2O3. The thickness of the dielectric film 7 can be 100nm-5000nm, the dielectric constant and refractive index can be 1-3, and the thermal conductivity can be 0.001-500W / m / C. The main function of the dielectric film 7 is to ensure that the parasitic capacitance of the entire laser 100 is sufficiently small; therefore, it is desirable for the dielectric film 7 to have a relatively large thickness and a low dielectric constant. For example, the thickness of the dielectric film 7 can be 500nm, 1000nm, or 5000nm, and the dielectric constant can be 1 or 2.
[0053] This application does not specify the material of the substrate structure 1. Exemplarily, the substrate structure 1 may be made of one or more combinations of GaAs, GaN, and InP.
[0054] In some implementations of this application, the active region 4 extends along the Y direction, dividing the substrate structure 1 into a first substrate 13 and a second substrate 14 sequentially arranged along the X direction. The first substrate 13 is located between the active region 4 and the electrode 2, and the second substrate 14 is located between the active region 4 and the electrode 3. One of the electrodes 2 and 3 is an N-type electrode, and the other is a P-type electrode; this application does not limit their correspondence. When electrode 2 is an N-type electrode and electrode 3 is a P-type electrode, the first substrate 13 is an N-type substrate, and the second substrate 14 is a P-type substrate. When electrode 2 is a P-type electrode and electrode 3 is an N-type electrode, the first substrate 13 is a P-type substrate, and the second substrate 14 is an N-type substrate. Exemplarily, the N-type substrate can be made of N-doped InP, and the P-type substrate can be made of P-doped InP.
[0055] The technical solution provided in this application is not limited to any type of laser. It is applicable not only to modulated lasers, such as directly modulated lasers (DML) and electroabsorption modulated lasers (EML), but also to unmodulated lasers, such as high-power light sources for silicon photonics. Furthermore, the technical solution of this application is not only applicable to lasers, but also to modulators and detectors. For actively powered semiconductor devices, this application is applicable as long as there is a problem with poor heat dissipation, and it can provide a good heat dissipation path while ensuring that bandwidth performance is not degraded.
[0056] The technical solution provided in this application does not limit the waveguide type of the laser; it can be applied not only to ridge waveguides but also to buried (BH) waveguides. When the laser 100 is a ridge waveguide laser, referring to Figures 7 and 8, the active region 4 is located within the substrate layer 11, the first substrate 13 includes the substrate layer 11 below the active region 4, and the second substrate 14 includes the substrate layer 11 above the active region 4 and the convex ridge 12. When the laser 100 is a buried laser, referring to Figures 9 and 10, the active region 4 is located within the convex ridge 12, the first substrate 13 includes the convex ridge 12 below the active region 4 and the substrate layer 11, and the second substrate 14 includes the convex ridge 12 above the active region 4.
[0057] The semiconductor device provided in this application can reduce the thermal resistance of the semiconductor device while ensuring a large bandwidth, thereby optimizing both bandwidth and thermal resistance characteristics. To demonstrate the beneficial effects of this application, the applicant conducted relevant experiments. The applicant selected a conventional direct-modulation laser (as shown in Figure 3) with a chip cavity length of 150 μm, a SiO2 dielectric film material, and a dielectric film thickness of 300 nm for testing, and measured the thermal resistance of the conventional laser to be 280 K / W and the bandwidth to be 20 GHz. The applicant also tested the direct-modulation laser provided in this application (as shown in Figure 7), and measured the laser's thermal resistance to be 155 K / W and the bandwidth to be 37 GHz. Figure 11 shows a thermal simulation diagram of the prior art and this application, and Figure 12 shows a comparison of the bandwidth curves of the prior art and this application. The comparison shows that the laser provided in this application can reduce the thermal resistance by 44% and increase the bandwidth by 85% compared to the conventional laser. Therefore, this application can simultaneously achieve a large bandwidth and a small thermal resistance.
[0058] Secondly, this application provides an electronic device, including any of the semiconductor devices and housings described in the foregoing embodiments in conjunction with Figures 7 to 10, wherein the semiconductor device is disposed within the housing.
[0059] The specific embodiments described above illustrate the implementation of this application. Those skilled in the art can easily understand other advantages and effects of this application from the content disclosed in this specification. Although the description of this application is presented in conjunction with some embodiments, this does not mean that the features of this application are limited to this embodiment. On the contrary, the purpose of describing the application in conjunction with embodiments is to cover other options or modifications that may be derived based on the claims of this application. This application may also be implemented without using these details. Furthermore, to avoid confusion or obscuring the focus of this application, some specific details have been omitted in the description. It should be noted that, unless otherwise specified, the embodiments and features in the embodiments of this application can be combined with each other.
[0060] In the embodiments of this application, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined with "first" and "second" may explicitly or implicitly include one or more of that feature.
[0061] In the embodiments of this application, "and / or" is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, or B existing alone. Additionally, the character " / " in this document generally indicates that the preceding and following related objects have an "or" relationship.
[0062] In the description of the embodiments of this application, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation" and "connection" should be interpreted broadly. For example, "connection" can be a detachable connection or a non-detachable connection; it can be a direct connection or an indirect connection through an intermediate medium.
[0063] In the description of this application, it should be noted that the terms "upper", "lower", "top", "bottom", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application.
[0064] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "set," "install," "connect," and "fit" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal communication between two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.
[0065] Obviously, those skilled in the art can make various modifications and variations to this application without departing from the spirit and scope of this application. Therefore, if such modifications and variations fall within the scope of the claims of this application and their equivalents, this application also intends to include such modifications and variations.
Claims
1. A semiconductor device, characterized in that, include: A substrate structure includes a substrate layer and ridges, wherein the thickness direction of the substrate layer is a first direction, the substrate layer has an upper surface and a lower surface disposed opposite to each other along the first direction, and the ridges protrude from the upper surface along the first direction; An active region is disposed within the substrate structure, and the active region has a heat-generating area; A first electrode is disposed on the lower surface; The second electrode is located at the upper end of the ridge; A heat dissipation structure is located between the upper surface and the second electrode, the extension direction of the heat dissipation structure is perpendicular to the first direction, and the ridge extends through the heat dissipation structure along the first direction; A first dielectric film is disposed between the substrate structure and the heat dissipation structure.
2. The semiconductor device according to claim 1, characterized in that, The first dielectric film is disposed on the upper surface and the sidewall of the ridge. The heat dissipation structure is spaced a certain distance from the second electrode. The heat dissipation structure is in contact with the first dielectric film disposed on the upper surface and the first dielectric film disposed on the sidewall of the ridge.
3. The semiconductor device according to claim 2, characterized in that, The active region divides the substrate structure into a first substrate and a second substrate arranged sequentially along the first direction. The first substrate is located between the active region and the first electrode, and the second substrate is located between the active region and the second electrode.
4. The semiconductor device according to claim 3, characterized in that, The first electrode is an N-face electrode, the first substrate is an N-type substrate, the second electrode is a P-face electrode, and the second substrate is a P-type substrate.
5. The semiconductor device according to claim 3, characterized in that, The first electrode is a P-side electrode, the first substrate is a P-type substrate, the second electrode is an N-side electrode, and the second substrate is an N-type substrate.
6. The semiconductor device according to claim 3, characterized in that, The active region is located within the substrate layer, the first substrate includes a portion of the substrate layer, and the second substrate includes another portion of the substrate layer and the ridge.
7. The semiconductor device according to claim 3, characterized in that, The active region is located within the ridge, the first substrate includes a portion of the ridge and the substrate layer, and the second substrate includes another portion of the ridge.
8. The semiconductor device according to any one of claims 1 to 7, characterized in that, The heat dissipation structure is made of one or more combinations of Au, Cn, and Si.
9. The semiconductor device according to claim 8, characterized in that, The thickness of the heat dissipation structure is 5nm-5000nm, and the thermal conductivity is 10-500W / m / C.
10. The semiconductor device according to any one of claims 1 to 7, characterized in that, A second dielectric film is provided between the heat dissipation structure and the second electrode, and the heat dissipation structure and the second electrode are respectively in contact with the second dielectric film.
11. The semiconductor device according to claim 10, characterized in that, The thickness of the second dielectric film is greater than the thickness of the first dielectric film.
12. The semiconductor device according to claim 11, characterized in that, The first dielectric film is made of one or more combinations of SiO2, Si3N4, Al2O3, and AlN.
13. The semiconductor device according to claim 12, characterized in that, The thickness of the first dielectric film is 5nm-500nm, the dielectric constant and refractive index are 1-3.2, and the thermal conductivity is 1-500W / m / C.
14. The semiconductor device according to claim 11, characterized in that, The second dielectric film is made of one or more combinations of SiO2, Si3N4, and Al2O3.
15. The semiconductor device according to claim 14, characterized in that, The second dielectric film has a thickness of 100nm-5000nm, a dielectric constant and refractive index of 1-3, and a thermal conductivity of 0.001-500W / m / C.
16. An electronic device, characterized in that, It includes a housing and a semiconductor device as described in any one of claims 1 to 15, wherein the semiconductor device is disposed within the housing.