Integrated device, thermal management device, and method

Abstract

The present application provides an integrated device, a thermal management device, and a method. The integrated device comprises: a first thermally conductive insulating medium, the first thermally conductive insulating medium being in contact with a phase change material; and a thermal management device, comprising a first conductive structure and a second conductive structure, wherein the first conductive structure is connected to the phase change material by means of the first thermally conductive insulating medium, the second conductive structure is used for inputting a voltage, and when the second conductive structure is energized, the first conductive structure can absorb or release, by means of the first thermally conductive insulating medium, heat from / to a region where the phase change material is located. On the basis of the present application, active thermal management of the integrated device (such as a radio frequency switch integrated device) can be implemented, thereby improving the performance of the integrated device.

Description

Integrated device, thermal management device and method

[0001] This application claims priority to Chinese Patent Application No. 202410680787.4, filed on May 29, 2024, entitled "Integrated Device, Thermal Management Device and Method", the entire contents of which are incorporated herein by reference. Technical Field

[0002] This application relates to the field of wireless communication, and more specifically, to an integrated device, a thermal management device, and a method. Background Technology

[0003] The working principle of a phase-change radio frequency (RF) switch is based on an electrothermal-driven phase change to achieve the switching function. Therefore, the temperature and thermal management of the RF switch device are crucial to its performance. For example, under high-power RF signal operation, the losses generated in the phase change material region will be converted into heat accumulation. When the temperature of the heat accumulation is higher than the phase change temperature, the phase change material may spontaneously change its state, leading to the failure of the phase-change RF switch. Summary of the Invention

[0004] This application provides an integrated device, a thermal management device, and a method that can achieve thermal management of devices (such as radio frequency switches).

[0005] In a first aspect, an integrated device is provided. The integrated device includes: a first thermally conductive insulating medium in contact with a phase change material; and a thermal management device including a first conductive structure and a second conductive structure. The first conductive structure is connected to the phase change material via the first thermally conductive insulating medium, and the second conductive structure is used to input voltage. When the second conductive structure is energized, the first conductive structure absorbs or releases heat to the region where the phase change material is located via the first thermally conductive insulating medium.

[0006] Based on the above scheme, one end of the thermal management device (i.e., the first conductive structure) is connected to the phase change material through a thermally conductive insulating medium, and the other end of the thermal management device (i.e., the second conductive structure) can be input with voltage. Thus, by inputting voltage to the second conductive structure of the thermal management device, the first conductive structure is triggered to absorb or release heat to the area where the phase change material is located through the thermally conductive insulating medium. This scheme enables active thermal management of the area where the phase change material is located, improving the stability and performance of the integrated device (such as an RF switch integrated device).

[0007] In conjunction with the first aspect, in some implementations of the first aspect, the integrated device further includes a heat dissipation device for dissipating heat absorbed by the first conductive structure in the region where the phase change material is located.

[0008] Based on the above scheme, by designing a heat dissipation device, the heat absorbed from the area where the phase change material is located through the first conductive structure can be released, thereby improving the working performance of the thermal management device.

[0009] In conjunction with the first aspect, in some implementations of the first aspect, the integrated device further includes a controller for controlling the first conductive structure to absorb or release heat to the region where the phase change material is located through the first thermally conductive insulating medium.

[0010] Based on the above scheme, a controller is designed to control the first conductive structure to absorb or release heat from the region where the phase change material is located.

[0011] In conjunction with the first aspect, in some implementations of the first aspect, the thermal management device includes a first thermoelectric structure and a second thermoelectric structure, one end of the first thermoelectric structure and one end of the second thermoelectric structure are connected through a first conductive structure, and the other ends of the first thermoelectric structure and the other ends of the second thermoelectric structure are connected to a controller through a second conductive structure, wherein the first thermoelectric structure and the second thermoelectric structure are different.

[0012] As an example, the difference between the first thermoelectric structure and the second thermoelectric structure can be replaced with: the thermoelectric properties of the first thermoelectric structure and the second thermoelectric structure are different.

[0013] As an example, the first thermoelectric structure and the second thermoelectric structure may differ in that at least one of the following parameters of the first thermoelectric structure and the second thermoelectric structure is different (or, at least one of the following parameters of the thermoelectric material of the first thermoelectric junction and the thermoelectric material of the second thermoelectric structure is different): Seebeck coefficient, Peltier coefficient, thermal conductivity, electrical conductivity, semiconductor type, carrier type, band structure, etc.

[0014] Based on the above scheme, since the first thermoelectric structure and the second thermoelectric structure are different, such as the first thermoelectric structure and the second thermoelectric structure having different thermoelectric characteristics, after the second conductive structure of the thermal management device is input with voltage, a temperature difference will be generated between the first conductive structure and the second conductive structure, which can trigger the first conductive structure to absorb or release heat to the phase change material region.

[0015] In conjunction with the first aspect, in some implementations of the first aspect, the integrated device further includes a substrate, a phase change material, a first thermally conductive insulating medium, and a thermal management device on or in contact with the substrate; one end of the first thermoelectric structure and one end of the second thermoelectric structure are connected in a direction perpendicular to the substrate via a first conductive structure, and the second conductive structure is located above the first thermoelectric structure and the second thermoelectric structure.

[0016] Based on the above scheme, the thermal management device can be a vertical structure, which can accelerate heat dissipation and improve thermal management performance.

[0017] In conjunction with the first aspect, in some implementations of the first aspect, the integrated device further includes a second thermally conductive insulating medium located between the substrate and the first thermoelectric structure and the second thermoelectric structure.

[0018] Based on the above scheme, a thermally conductive insulating medium, such as a medium with low thermal conductivity, can be placed between the substrate and the first thermoelectric structure and the second thermoelectric structure, which can reduce the rapid thermal conduction between the first conductive structure and the second conductive structure.

[0019] In conjunction with the first aspect, in some implementations of the first aspect, the integrated device further includes a phase change state switching device, which is connected to the phase change material via a first thermally conductive insulating medium. The phase change state switching device includes at least one third conductive structure and a resistance heater. The third conductive structure is used to input electrical pulses, and the resistance heater is used to convert the electrical pulses into thermal pulses, so that the thermal pulses are transmitted to the phase change material through the first thermally conductive insulating medium to control the state of the phase change material.

[0020] In conjunction with the first aspect, in some implementations of the first aspect, the first conductive structure is the same as a third conductive structure, or the first conductive structure is a phase change state switching device.

[0021] Based on the above scheme, a conductive structure of the thermal management device and a conductive structure of the phase change state switching device can be combined and used as a common conductive structure, or the entire phase change state switching device can be used as the first conductive structure of the thermal management device, which can improve the integration of the device and reduce the manufacturing cost.

[0022] In conjunction with the first aspect, in some implementations of the first aspect, the integrated device further includes a substrate, a phase change material, a first thermally conductive insulating medium, and a thermal management device on or in contact with the substrate, and a resistance heater in contact with the substrate through a via on the substrate.

[0023] In conjunction with the first aspect, in some implementations of the first aspect, the integrated device further includes a detection device for detecting temperature-related information in the region where the phase change material is located.

[0024] Based on the above scheme, by detecting the temperature around the phase change material, the controller can provide reasonable feedback on the device's power capacity, drive electrical parameters, etc.

[0025] In conjunction with the first aspect, in some implementations of the first aspect, the thermal management device further includes a heat recovery device for recovering heat absorbed by the first conductive structure from the phase change material region.

[0026] Based on the above scheme, by designing a heat recovery device, the waste heat generated in the phase change material region can be recovered as energy, thereby enabling some devices (such as small devices, such as small base stations) to have self-powered functions and improving resource utilization.

[0027] In conjunction with the first aspect, in some implementations of the first aspect, the integrated device further includes at least one conductive structure that is in contact with a phase change material to control the on / off state of the radio frequency switch.

[0028] In conjunction with the first aspect, in some implementations of the first aspect, the integrated device is a phase-change radio frequency switch integrated device.

[0029] Secondly, a thermal management device is provided. This thermal management device includes a first conductive structure and a second conductive structure. The first conductive structure is connected to a phase change material via a thermally conductive insulating medium. The second conductive structure is used to input voltage, and when the second conductive structure is energized, the first conductive structure absorbs or releases heat to the region where the phase change material is located through the thermally conductive insulating medium.

[0030] Optionally, the thermal management device is the thermal management device described in the first aspect or any possible implementation of the first aspect.

[0031] Thirdly, a thermal management method is provided, which is applied to a thermal management device. The thermal management device includes an electrical input terminal and a thermal input / output terminal. The method includes: after the electrical input terminal receives electricity, it triggers the thermal input / output terminal to absorb or release heat in the region where the phase change material is located.

[0032] In conjunction with the third aspect, in some implementations of the third aspect, the method also includes: outputting the heat absorbed by the heat input / output terminal in the region where the phase change material is located.

[0033] In conjunction with the third aspect, in some implementations of the third aspect, the method further includes: recovering heat absorbed from the phase change material region; or, powering the device based on the heat absorbed from the phase change material region.

[0034] In conjunction with the third aspect, in some implementations of the third aspect, the method also includes: detecting the temperature of the region where the phase change material is located.

[0035] Fourthly, a communication device is provided, which includes the integrated device described in the first aspect or any possible implementation of the first aspect; or, the communication device includes the thermal management device described in the second aspect or any possible implementation of the second aspect.

[0036] The implementation methods and beneficial effects of aspects two through four can be found in the relevant descriptions in aspect one. Attached Figure Description

[0037] Figure 1 is a schematic diagram of the apparatus 100 according to an embodiment of this application.

[0038] Figures 2 and 3 are schematic diagrams of a thermal management device according to embodiments of this application.

[0039] Figure 4 is a schematic diagram of a phase change state switching device proposed according to an embodiment of this application.

[0040] Figure 5 is a schematic diagram of a phase change state switching device and a thermal management device according to an embodiment of this application.

[0041] Figure 6 is another schematic diagram of the phase change state switching device and thermal management device proposed according to the embodiments of this application.

[0042] Figure 7 is a schematic diagram of a vertical thermal management device according to an embodiment of this application.

[0043] Figure 8 is another schematic diagram of the apparatus 100 according to an embodiment of this application.

[0044] Figures 9 and 10 are schematic diagrams showing the positions of the components in the apparatus 100 according to embodiments of this application.

[0045] Figure 11 is a schematic diagram of the three-dimensional structure of the device 100 according to an embodiment of this application.

[0046] Figure 12 is a schematic diagram of the simulation results of the phase change radio frequency switch parameter S.

[0047] Figure 13 is a schematic diagram of the simulation results of the device proposed according to the embodiments of this application.

[0048] Figure 14 is a schematic diagram of a communication device provided according to an embodiment of this application.

[0049] Figure 15 is another schematic diagram of a communication device provided according to an embodiment of this application. Detailed Implementation

[0050] The technical solutions in this application will now be described with reference to the accompanying drawings.

[0051] To facilitate understanding of the embodiments of this application, the following points will be explained before introducing the embodiments of this application.

[0052] The terms "upper", "lower", "left", "right", "front", "rear", "top", "bottom", "inner", and "outer" used in the embodiments of this application indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application.

[0053] The term "perpendicular" in this application is not strictly perpendicular, but rather within the allowable tolerance range. Similarly, "parallel" is not strictly parallel, but also within the allowable tolerance range.

[0054] In the various embodiments of this application, unless otherwise specified or in case of logical conflict, the terminology and / or descriptions between different embodiments are consistent and can be referenced by each other. Technical features in different embodiments can be combined to form new embodiments based on their inherent logical relationships.

[0055] First, to facilitate understanding of the embodiments of this application, the terms involved in this application will be briefly explained.

[0056] 1. Radio frequency (RF) switch

[0057] Radio frequency (RF) switches are crucial reconfigurable devices in RF front-end modules, responsible for transmitting and receiving RF signals. They have wide applications in wireless communication systems, such as signal switching, phase shifting, and beamforming. With the development and iteration of communication technologies, future communication networks (such as 6th generation (6G) networks) may gradually shift communication frequencies to higher frequency bands such as millimeter waves and terahertz waves due to the need for larger data bandwidth and faster data transmission rates. Based on the characteristics of high-frequency bands and the performance requirements of reconfigurable devices, RF switches, as fundamental functional components, must meet higher requirements in terms of low insertion loss, high isolation, device integration, and low power consumption.

[0058] 2. Radio Frequency Switching Technology

[0059] Currently, low-frequency radio frequency (RF) switching technologies mainly include switches based on traditional semiconductor technologies, such as positive intrinsic negative (PIN) diodes and field-effect transistors (FETs), as well as mechanical micro-electro-mechanical system (MEMS) switches. Besides traditional RF switches, there are also novel RF switches based on new materials, such as RF switches based on two-dimensional materials and phase-change RF switches based on insulator-metal phase-change materials. Addressing the current demands for low insertion loss, low power consumption, and high isolation in RF switches, phase-change RF switch technology offers advantages over other RF switch technologies, including low insertion loss, high isolation, zero static power consumption (due to non-volatile phase-change materials), and the ability to achieve large-scale thin-film fabrication processes.

[0060] Phase-change radio frequency (RF) switch technology primarily uses phase-change materials (or phase-change thin-film materials) with insulator-metal phase-change properties and connected radio frequency channels as basic functional units. It controls the high-resistivity and low-resistivity states of the phase-change material through thermal pulses converted from electrical or optical signals. Currently, the best-performing RF switches are four-port RF switches that use indirect heating via electrical pulses to switch the phase-change material.

[0061] The four-port RF switch structure consists of a Joule-heating resistor heater placed beneath a phase change material (PCM), and a highly thermally conductive electrically insulating layer between the PCM and the resistor heater. An electrical pulse is applied to the heating resistor to generate a Joule heating pulse. This Joule heating pulse is efficiently conducted to the PCM through the highly thermally conductive electrically insulating layer, driving a change in the PCM's phase transition state (low-resistance crystalline state and high-resistance amorphous state), thereby enabling the electrical pulse to switch the PCM RF switch.

[0062] In short, phase-change RF switches (such as the four-port RF switch mentioned above) operate on the principle of electrothermal-driven phase change to achieve switching functionality. Therefore, temperature and thermal management of the RF switch device are crucial to its performance. By rationally designing and managing the thermal characteristics of the constituent materials and structure of the RF switch device, the switching characteristics of the phase-change RF device, such as switching speed and drive power consumption, can be effectively improved. However, most of these thermal designs consider the driving situation of electrothermal changes in the phase-change material state, neglecting the thermal problems faced by the phase-change RF switch during operation. For example, losses generated in the phase-change material region under high-power RF signal operation will be converted into heat accumulation. When the temperature of the accumulated heat exceeds the phase-change temperature, it will cause the phase-change material to spontaneously change its state, leading to phase-change RF switch failure. Therefore, effective thermal management of heat accumulation in the core area of ​​the phase-change switch during operation can improve the stability of the phase-change RF switch device (such as the power capacity and linearity of the RF switch).

[0063] Currently, the thermal management of radio frequency switches (such as the phase change radio frequency switch mentioned above) mainly includes the following solutions.

[0064] One approach is to etch grooves or create heat dissipation holes on the back side of the RF switch device's substrate. The principle behind this approach is that the grooves or holes allow heat to dissipate rapidly from the phase change layer (i.e., the region containing the phase change material), accelerating the cooling rate of the phase change layer and making the phase change process of the phase change material more uniform, thus improving device reliability and sensitivity. However, the heat dissipation efficiency of this approach depends on the structure of the RF switch device and the thermal conductivity of the substrate, thus its heat dissipation capacity is limited. Furthermore, this approach does not provide actively adjustable thermal management for the RF switch device; in other words, the device is fixed after fabrication and cannot be configured according to the application environment. If the device is later integrated into other devices or systems, it may be affected by other system components, leading to poor thermal management. Additionally, this approach increases the difficulty of driving the phase change device, potentially increasing power consumption.

[0065] Another approach is to change the connection structure of the RF switching device to a configuration of multiple phase-change switches connected in parallel or stacked. The principle behind this approach is to distribute the high power capacity by using multiple parallel or stacked phase-change switches, reducing heat accumulation at a single phase-change switch. However, this approach requires the introduction of multiple additional phase-change switches for coupling to distribute the high power capacity, thus increasing the overall device complexity and manufacturing cost. Furthermore, when the external environment changes or when integrated with other devices, it is impossible to dynamically adjust the thermal management of the RF switching device to adapt to switching performance.

[0066] All of the above-mentioned solutions represent passive thermal management for RF switching devices. Their effectiveness depends on the thermal conductivity of the device's structure or materials, thus the efficiency of passive thermal management is quite limited. Furthermore, once the RF switching device is manufactured, its thermal management capabilities are difficult to adjust dynamically and autonomously in response to changes in the external environment.

[0067] In view of this, this application proposes a solution to achieve active thermal management of phase change devices (such as RF switches) by designing a thermal management device. For example, the thermal management device includes two ends: an electrical input end and a thermal input / output end. After electricity is applied to the electrical input end, the thermal input / output end can be triggered to absorb or release heat in the area where the phase change material is located. This solution can solve the dynamic thermal problems faced by phase change devices in practical applications, such as high-power capacity RF signals, integration with other device systems, and changes in ambient temperature. Specifically, this solution can actively regulate the thermal management of phase change devices during operation, thereby reducing the impact of temperature on phase change devices and improving their operational stability and high-power performance. In addition, the device has process compatibility and compact device integration features, enabling fabrication, integration, and active thermal management of the core area of ​​the phase change device, and features low energy consumption. Here, a phase change device refers to a device based on a phase change material; in other words, the device includes a phase change material, and the state of the phase change material can be changed by applying a thermal pulse to the phase change material, thereby controlling the operation of the device. Active thermal management refers to the ability to dynamically input electricity into the electrical input terminal based on actual conditions, triggering the thermal input / output terminal to absorb or release heat in the area where the phase change material is located, thereby achieving thermal management of the area where the phase change material is located.

[0068] Figure 1 is a schematic diagram of a device 100 according to an embodiment of this application. The device 100 includes a thermally conductive insulating medium and a thermal management device. The device 100 may be referred to as an integrated device or a thermal management device, and its name does not limit the scope of protection of the embodiments of this application. The device 100 may be a phase-change device integrated device, a radio frequency switch integrated device, or a phase-change radio frequency switch integrated device, and is not limited thereto. Taking a phase-change radio frequency switch integrated device as an example, a phase-change radio frequency switch integrated device represents a device that includes at least a phase-change radio frequency switch and a device (such as a thermal management device) for managing the heat of the heat-generating region (such as the phase-change material region) of the phase-change radio frequency switch.

[0069] Optionally, the device 100 further includes at least one of the following: a phase change material, a heat dissipation device, a controller, a phase change state switching device, a substrate, at least one conductive structure (such as a metal structure, such as a metal strip), a detection device, and a heat recovery device. The various components of the device 100 are described in detail below.

[0070] 1. Thermal management device and thermally conductive insulating medium

[0071] The thermal management device manages the heat (or heat flow) in the region where the phase change material (PCM) is located. In other words, the thermal management device can absorb or release heat in this region. For example, if heat accumulates in the PCM region, the thermal management device can absorb heat. Conversely, if the temperature in the PCM region is low, the thermal management device can release heat, allowing the PCM to undergo a phase change in a suitable temperature environment. For simplicity, the region containing the PCM is referred to as the PCM region.

[0072] The thermal management device may also be called a thermal management module, a thermal management unit, or an active thermal management device; these names do not limit the scope of protection of the embodiments in this application. A device 100 may include one thermal management device or multiple thermal management devices, which is not limited herein.

[0073] Optionally, the thermal management device is connected to the phase change material via a thermally conductive insulating medium (i.e., an example of a first thermally conductive insulating medium), thereby allowing the thermal management device to conduct heat to the phase change material region, absorbing or releasing heat. The connection between the thermal management device and the phase change material via a thermally conductive insulating medium indicates that heat input or output (or absorption or release) can be achieved between the thermal management device and the phase change material through this medium. Based on this, heat in the phase change material region is absorbed by the thermal management device via the thermally conductive insulating medium, or the thermal management device releases heat to the phase change material region via the thermally conductive insulating medium.

[0074] This application does not limit the connection method between the thermal management device and the phase change material. In other words, "connection" here means that the thermal management device can conduct heat between itself and the phase change material region. One example is that the thermal management device and the phase change material are connected through a thermally conductive insulating medium, including: the thermal management device and the phase change material are in contact through the thermally conductive insulating medium. Another example is that the thermal management device and the phase change material are connected through a thermally conductive insulating medium, including: the thermal management device is in contact with the thermally conductive insulating medium, and the thermally conductive insulating medium is in contact with the phase change material. In this way, the thermal management device can conduct heat between itself and the phase change material region through the thermally conductive insulating medium.

[0075] In the embodiments of this application, the term "heat absorption" is mentioned multiple times, which means that the heat of the phase change material region is transferred to the thermal management device. In other words, after the thermal management device conducts heat to the phase change material region through a thermally conductive insulating medium, the temperature of the phase change material region is lower than the temperature before the heat conduction. Alternatively, after the thermal management device conducts heat to the phase change material region through a thermally conductive insulating medium, the heat in the phase change material region no longer accumulates (or the heat in the phase change material region is released). "Heat release" means that the heat of the thermal management device is transferred to the phase change material region. In other words, after the thermal management device conducts heat to the phase change material region through a thermally conductive insulating medium, the temperature of the phase change material region is higher than the temperature before the heat conduction.

[0076] Among them, thermally conductive insulating media, such as high thermally conductive insulating media (i.e., thermally conductive insulating media with high thermal conductivity), can serve as the heat transfer medium between the thermal management device and the phase change material, so as to control the heat in the phase change material region through the thermal management device. For example, when radio frequency signals (such as high-power radio frequency signals) are transmitted on the phase change material, heat accumulation occurs in the phase change material region due to signal insertion loss. In this case, the thermally conductive insulating medium can be used to absorb the heat in the phase change material region, thereby reducing the temperature of the phase change material region and improving its switching characteristics under high-power capacity signals. The thermally conductive insulating media mentioned in the embodiments of this application (such as the first thermally conductive insulating medium, and the second thermally conductive insulating medium as described below) refers to thermally electrically conductive insulating media, which will not be elaborated further below.

[0077] Any method that enables the thermal management device to absorb or release heat in the phase change material region is applicable to the embodiments of this application. For ease of explanation, the embodiments of this application mainly use the example of the thermal management device absorbing or releasing heat in the phase change material region through a thermally conductive insulating medium for illustration.

[0078] Optionally, the thermal management device includes a first conductive structure and a second conductive structure. The first conductive structure is connected to the phase change material via a thermally conductive insulating medium. The second conductive structure is used to input voltage. When the second conductive structure is energized, the first conductive structure absorbs or releases heat to the phase change material region through the thermally conductive insulating medium. In this way, after a voltage is input to the second conductive structure of the thermal management device, the first conductive structure can be triggered (or controlled) to absorb or release heat to the phase change material region, thereby achieving thermal management of the phase change material region and improving the performance stability and reliability of the device, such as improving the performance stability and reliability of phase change radio frequency devices under high-power capacity radio frequency signals.

[0079] The first conductive structure can also be referred to as a heat treatment end, a heat management end, a heat input / output end, or a heat absorption / release end. The heat management device can output heat to the phase change material region through the first conductive structure; or, the heat from the phase change material region can be input into the first conductive structure. In other words, the heat from the phase change material region can be dispersed to the heat management device through the first conductive structure.

[0080] The second conductive structure can also be called an electrical terminal or an electrical input terminal, which can input electricity (such as input voltage or current).

[0081] There is no limitation on the number of the first and second conductive structures. Furthermore, there is no limitation on the materials of the first and second conductive structures; in other words, as long as the first and second conductive structures can conduct electricity, they are acceptable, such as being metallic structures.

[0082] The thermal management device absorbs or releases heat in the region where the phase change material is located, which can be achieved through a first conductive structure and a second conductive structure. Specifically, after a voltage is input to the second conductive structure (in other words, a voltage of a certain amplitude is applied to the second conductive structure), a temperature difference is generated between the first and second conductive structures. This temperature difference allows the first conductive structure to absorb or release heat to the phase change material region.

[0083] In one possible scenario, after the second conductive structure receives an input voltage, the first conductive structure becomes the hot end and the second conductive structure becomes the cold end. In this case, the first conductive structure (i.e., the hot end) is triggered to release heat. Since the first conductive structure is in contact with the thermally conductive insulating medium, and the thermally conductive insulating medium is in contact with the phase change material region, the thermal management device can release heat to the phase change material region through the thermally conductive insulating medium.

[0084] In another possible scenario, after the second conductive structure receives an input voltage, the first conductive structure becomes the cold end and the second conductive structure becomes the hot end. In this case, the first conductive structure (i.e., the cold end) is triggered to absorb heat. Since the first conductive structure is in contact with the thermally conductive insulating medium, and the thermally conductive insulating medium is in contact with the phase change material region, the thermal management device can absorb heat from the phase change material region through the thermally conductive insulating medium.

[0085] Optionally, the thermal management device includes a first thermoelectric structure and a second thermoelectric structure. One end of the first thermoelectric structure and one end of the second thermoelectric structure are connected in series (or linked) through a first conductive structure, and the other ends of the first and second thermoelectric structures are connected to a controller through a second conductive structure. The controller will be described in detail later.

[0086] The first thermoelectric structure and the second thermoelectric structure are different; for example, their thermoelectric properties are different. Because the first thermoelectric structure and the second thermoelectric structure are different, such as their thermoelectric properties being different, when a voltage is input to the second conductive structure of the thermal management device, a temperature difference will be generated between the first conductive structure and the second conductive structure, which can then trigger the first conductive structure to absorb or release heat to the phase change material region.

[0087] As an example, the first thermoelectric structure and the second thermoelectric structure can differ in that at least one of the following parameters is different: Seebeck coefficient, Peltier coefficient, thermal conductivity, electrical conductivity, semiconductor type, carrier type, band structure, etc. One possible implementation is that the thermoelectric material of the first thermoelectric structure is an N-type semiconductor (or N-type thermoelectric material), and the thermoelectric material of the second thermoelectric structure is a P-type semiconductor (or P-type thermoelectric material).

[0088] In this application embodiment, the specific material (i.e., thermoelectric material) of the thermoelectric structure is not limited. For example, the thermoelectric material of the thermoelectric structure can be a metallic thermoelectric material or a semiconductor thermoelectric material. As an example, the thermoelectric material of the thermoelectric structure can be one or more of the following: lead telluride (PbTe), bismuth telluride (Bi2Te3), tin selenide (SnSe), cadmium antimonide (CdSb), germanium telluride (GeTe), Zintl-type thermoelectric materials, cage-like thermoelectric materials, oxide thermoelectric materials, Cu-based compounds (AgCu(Se,S,Te)), etc. Furthermore, the number of thermoelectric structures is not limited in this application embodiment.

[0089] Figures 2 and 3 are schematic diagrams of a thermal management device according to embodiments of this application.

[0090] As shown in Figure 2, the thermal management device can be used to convert thermal energy into electrical energy. One end of the first thermoelectric structure and one end of the second thermoelectric structure are connected (or in series) through a first conductive structure. The other ends of the first and second thermoelectric structures are connected to the second conductive structure, which is connected to a controller. The controller outputs voltage to both ends of the second conductive structure.

[0091] As mentioned above, the number of thermoelectric structures is not limited in the embodiments of this application. In other words, the thermal management device may include one first thermoelectric structure and one second thermoelectric structure; or, the thermal management device may include multiple first thermoelectric structures and multiple second thermoelectric structures. As shown in Figure 3, the first thermoelectric structure and the second thermoelectric structure are connected in series (or connected) through a first conductive structure. The other end of the first thermoelectric structure and the other end of the second thermoelectric structure are connected to the second conductive structure. Two second conductive structures that are not simultaneously connected to the first and second thermoelectric structures are connected to the controller. The first conductive structure of the thermal management device is in contact with the thermally conductive insulating medium. Applying voltage to the second conductive structure through the controller can trigger the first conductive structure to absorb or release heat in the phase change material region.

[0092] By designing a first thermoelectric structure and a second thermoelectric structure, a temperature difference can be generated between the two ends of the thermal management device (such as the first conductive structure and the second conductive structure). The embodiments of this application are not limited to this. In other words, any method that can generate a temperature difference between the two ends of the thermal management device (such as the first conductive structure and the second conductive structure) is applicable to the embodiments of this application. For example, based on the loading and unloading of a solid-state electrochemical material (refrigerant) under an electric field, heat absorption and release effects on the thermal management region (such as the phase change material region) can also be achieved, thereby realizing active thermal management. Furthermore, based on the heat absorption and release characteristics of phase change material conversion, combined with an electrically controlled driving method for the phase change material, active thermal management under electrical control can also be achieved.

[0093] 2. Controller

[0094] Optionally, the device 100 also includes a controller.

[0095] The controller can be used to control the first conductive structure to absorb or release heat to the phase change material region through the first thermally conductive insulating medium. For example, the controller applies a voltage of a certain amplitude to the second conductive structure of the thermal management device. Under the voltage drive, the thermal management device absorbs or releases heat at the first conductive structure. Since the first conductive structure is in contact with the thermally conductive insulating medium, and the thermally conductive insulating medium is in contact with the phase change material region, the thermal management device can achieve thermal management of the phase change material region.

[0096] As shown in Figure 1, the controller can be connected to the thermal management device; in other words, the controller is used to input voltage to the thermal management device (i.e., the second conductive structure of the thermal management device). The triggering conditions for the controller to input voltage to the thermal management device are not limited. For example, the controller inputs voltage to the thermal management device when the state of the phase change material changes. Another example is when a radio frequency signal passes through. Yet another example is when the controller detects (or determines) that the temperature in the phase change material region is too high.

[0097] As shown in Figure 1, the controller can also be connected to a phase change state switching device. In other words, the controller can input electrical pulses into the phase change state switching device so that the device generates thermal pulses, thereby changing the state of the phase change material. This will be described in detail below with reference to the phase change state switching device.

[0098] Figure 1 is an illustrative example, and the embodiments of this application are not limited thereto. For example, the controller can be replaced with at least two control devices, one of which is connected to the phase change state switching device, and the other is connected to the thermal management device. As another example, the thermal management device includes a control device that can be used to input voltage to the thermal management device (i.e., the second conductive structure of the thermal management device). As yet another example, the phase change state switching device includes a control device that can be used to input electrical pulses to the phase change state switching device.

[0099] 3. Phase change state switching device

[0100] Optionally, the device 100 may further include a phase change state switching device (or phase change state switching unit, or phase change state switching module).

[0101] The phase change state switching device and the phase change material are connected by a thermally conductive and electrically insulating medium (i.e., a thermally and electrically conductive insulating medium). This medium conducts the driving electrothermal pulses generated on the phase change state switching device to the phase change material, thereby changing the state of the material. Electrically, the thermally conductive and electrically insulating medium isolates the phase change material from the phase change state switching device.

[0102] The phase-change state switching device includes at least one third conductive structure, which is used for inputting electricity (such as an input electrical pulse). For example, the phase-change state switching device includes two third conductive structures.

[0103] As an example, the controller is connected to the phase-change state switching device, such as through a third conductive structure. The controller can apply electrical pulses to the phase-change state switching device, such as electrical pulses with adjustable pulse width and amplitude. These electrical pulses are converted into thermal pulses by electrothermal conversion on the phase-change state switching device. These thermal pulses act on the phase change material through a thermally conductive insulating medium, thereby controlling the electrical state (high-resistance state and low-resistance state) of the phase change material, and thus realizing the on / off function of the phase-change radio frequency switch.

[0104] Optionally, the phase change state switching device also includes a resistance heater. The resistance heater is connected to (or in contact with) a third conductive structure. The resistance heater can be used for electrothermal conversion, such as generating thermal pulses based on electrical pulses.

[0105] Figure 4 is a schematic diagram of a phase change state switching device according to an embodiment of this application. As shown in Figure 4, the controller is connected to a third conductive structure that contacts both ends of the resistance heater. The controller can output an electrical pulse signal with adjustable pulse width and amplitude. The electrical pulse signal generates a thermal pulse (such as a Joule thermal pulse) at the resistance heater through the third conductive structure. This thermal pulse is conducted onto the phase change material through a thermally conductive insulating medium. The phase change state is controlled by applying an electrical pulse with adjustable pulse width and amplitude.

[0106] In some embodiments, such as the one shown in Figure 1, the phase change state switching device uses a thermally conductive insulating medium to conduct electricity and heat and control the state of the phase change material. The thermal management device also uses a thermally conductive insulating medium to manage and control the heat in the phase change material region. Both the thermal management device and the phase change state switching device are connected to the controller via conductive structures. Therefore, the conductive structures of the thermal management device and the phase change state switching device can be designed to improve the device's integration and reduce manufacturing costs. Two possible implementation methods are described below.

[0107] One possible implementation is that the first conductive structure is identical to a third conductive structure. Based on this, a conductive structure of the thermal management device and a conductive structure of the phase change state switching device are combined as a common conductive structure, thereby improving the device's integration and reducing manufacturing costs.

[0108] Figure 5 is a schematic diagram of a phase change state switching device and a thermal management device according to an embodiment of this application. As shown in Figure 5, the device 100 includes a thermally conductive medium (i.e., an example of a heat dissipation device), a phase change state switching device (including a third conductive structure), a thermal management device (including a first thermoelectric structure, a second thermoelectric structure, a first conductive structure, and a second conductive structure), a metal structure, and a thermally conductive insulating medium. The thermal management device is connected (i.e., in contact) to the phase change material through the thermally conductive insulating medium, allowing the thermal management device to conduct heat to the phase change material region via the thermally conductive insulating medium. Furthermore, the second conductive structure of the thermal management device is connected (e.g., in contact) to the thermally conductive medium, allowing the second conductive structure to transfer heat absorbed by the thermal management device from the phase change material region to the thermally conductive medium. The phase change state switching device is also connected (i.e., in contact) to the phase change material through the thermally conductive insulating medium, allowing the thermal pulse generated on the phase change state switching device to be transmitted to the phase change material via the thermally conductive insulating medium, thereby changing the state of the phase change material. The metal structure is connected (i.e., in contact) to the phase change material to form an electrical path or an electrical open circuit, thereby controlling the on / off state of the radio frequency switch. Furthermore, as shown in Figure 5, one end of the thermal management device (i.e., the first conductive structure) and one end of the phase change state switching device (i.e., the third conductive structure) are combined as a common terminal. Since the control voltage of the phase change state switching device is a pulse voltage, and its pulse signal is generally applied when the phase change radio frequency switch is switched, while the voltage of the thermal management device is applied when the radio frequency signal passes through the phase change material, the two can be controlled and distinguished on a time scale by the controller. In addition, when dissipating heat from the phase change material region, the first conductive structure, acting as the cold end, has a higher thermal conductivity and a shorter vertical distance from the phase change material region, enabling better heat dissipation and cooling of the phase change material.

[0109] Another possible implementation is to use the entire phase change state switching device as the first conductive structure of the thermal management device. Based on this, the controller can input voltage to the thermal management device through the phase change state switching device; that is, the controller can input voltage into the phase change switching device to trigger the first conductive structure of the thermal management device to absorb or release heat in the phase change material region. This approach can also improve the device's integration and reduce manufacturing costs.

[0110] Figure 6 is another schematic diagram of the phase change state switching device and the thermal management device according to the embodiments of this application. Figure 6 is similar to Figure 5, except that, as shown in Figure 6, one end of the thermal management device (i.e., the second conductive structure) is the phase change state switching device; in other words, one end of the first thermoelectric structure and one end of the second thermoelectric structure are connected to the phase change state switching device. The descriptions of the components in Figure 6 can be found in Figure 5, and will not be repeated here.

[0111] The phase change state switching device described above is an example. Any device that can convert an electrical pulse into a thermal pulse and then transmit the thermal pulse to the phase change material to control the structure of the phase change material is applicable to the embodiments of this application.

[0112] 4. Substrate

[0113] Optionally, the device 100 further includes a substrate. The substrate can provide support for the device 100. If the device 100 is an integrated radio frequency switch, the substrate can also serve as a transmission medium for the radio frequency signal channel.

[0114] Thermally conductive insulating medium and thermal management device are on or in contact with the substrate. Further optionally, phase change material, at least one conductive structure (such as a metal structure, such as a metal strip), and phase change state switching device are also on or in contact with the substrate.

[0115] As an example, the substrate is a wafer substrate, such as a high-resistivity wafer substrate. The material of the substrate is not limited. For example, the substrate material can be one or more of the following: silicon (Si), silicon dioxide (SiO2), silicon-silicon oxide (Si / SiO2), silicon nitride (SiN), sapphire (Al2O3), silicon carbide (SiC), gallium nitride (GaN), diamond, gallium arsenide (GaAs), aluminum nitride (AlN), indium phosphide (InP), glass, polycarbonate (PC), polyester (PET), and polyimide (PI).

[0116] Alternatively, the resistance heater contacts the substrate through a via (i.e., a via on the substrate). Therefore, the resistance heater can contact the substrate via a via.

[0117] Optionally, one end of the first thermoelectric structure and one end of the second thermoelectric structure are connected by a first conductive structure in a direction perpendicular to the substrate, and the second conductive structure is located above the first and second thermoelectric structures. Based on this, the thermal management device can be a vertical structure.

[0118] Figure 7 is a schematic diagram of a vertical thermal management device according to an embodiment of this application. As shown in Figure 7, the device 100 includes a thermally conductive medium (i.e., an example of a heat dissipation device), a thermal management device (including a first thermoelectric structure, a second thermoelectric structure, a first conductive structure, and a second conductive structure), a resistance heater, a metal structure (such as a first metal structure and a second metal structure), a thermally conductive insulating medium, a passivation layer, and a substrate.

[0119] One side of the substrate has a metal structure (referred to as the first metal structure for distinction), which can be used for conductivity to enable signal (such as radio frequency signals) transmission. The other side of the substrate is in contact with a thermally conductive insulating medium and a resistance heater, such as the resistance heater being positioned above the substrate and in contact with the thermally conductive insulating medium. As shown in Figure 7, the thermally conductive insulating medium is located below (directly below) and in contact with the phase change material (PCM), allowing the thermal pulses generated by the resistance heater to be transmitted to the PCM via the thermally conductive insulating medium, thereby changing the state of the PCM. A passivation layer is located above and in contact with the PCM, protecting it from oxidation, for example. The PCM is in contact with the metal structure (referred to as the second metal structure for distinction), such as both ends of the PCM contacting the second metal structure, to form an electrical path or an electrical open circuit, thereby controlling the on / off state of the radio frequency switch. Other components can be referred to in Figure 5 for details; here, we will mainly introduce the thermal management device and the resistance heater in conjunction with Figure 7. As shown in Figure 7, the first conductive structure of the thermal management device is connected to the thermally conductive insulating medium. The first thermoelectric structure and the second thermoelectric structure are connected to the first conductive structure in a direction perpendicular to the substrate. The second conductive structure and the thermally conductive medium are located above the first and second thermoelectric structures. Furthermore, to facilitate the connection of the conductive structure of the resistance heater to the controller and to save space, the resistance heater can be placed on the substrate using a through-hole. In other words, the resistance heater is located on (or in) the through-hole of the substrate, and one end of the resistance heater is connected to the controller through the through-hole. This vertical thermal management device, or the device 100 including this thermal management device, can be integrated with other system components in a three-dimensional integration manner, allowing the heat from the phase change material region to diffuse vertically through the thermal management device.

[0120] Optionally, the device 100 further includes a thermally conductive insulating medium (i.e., an example of a second thermally conductive insulating medium) located between the substrate and the first thermoelectric structure and the second thermoelectric structure. For ease of distinction, the thermally conductive insulating medium located between the substrate and the first thermoelectric structure and the second thermoelectric structure is referred to as the second thermally conductive insulating medium. The second thermally conductive insulating medium can be a low thermal conductivity medium, that is, a medium with relatively low thermal conductivity, which can reduce the rapid heat conduction between the first conductive structure and the second conductive structure.

[0121] 5. Heat dissipation device

[0122] Optionally, the device 100 also includes a heat dissipation device.

[0123] A heat dissipation device is used to dissipate the heat absorbed by the first conductive structure in the region where the phase change material is located. Based on this, the heat absorbed by the thermal management device from the region where the phase change material is located through the first conductive structure can be released.

[0124] One possible implementation involves the heat dissipation device being connected to or in contact with the second conductive structure, as shown in Figures 5 to 7 as a heat-conducting medium. Specifically, after the first conductive structure absorbs heat from the phase change material region, it can transfer that heat to the second conductive structure, which can then release the heat based on the connected or disconnected heat dissipation device.

[0125] 6. Heat recovery device

[0126] Optionally, the device 100 also includes a heat recovery device.

[0127] A heat recovery device, or energy recovery device, can be used to recover heat absorbed by a first conductive structure from the phase change material region. This heat recovery device can be located within or outside the thermal management device; there is no limitation on this. As an example, the heat recovery device is connected to or in contact with a second conductive structure of the thermal management device; alternatively, the heat recovery device is connected to or in contact with a heat dissipation device, meaning that heat collected by the heat dissipation device can be conducted to the heat recovery device.

[0128] Figure 8 is another schematic diagram of the device 100 according to an embodiment of this application. Similar to Figure 1, Figure 8 differs in that the device 100 may further include a detection device and a heat recovery device. As shown in Figure 8, the device 100 may include a heat recovery device, which can recover waste heat generated in the phase change material region to provide self-powered power for some devices (such as small devices, such as small base stations). It is understood that Figure 8 is merely illustrative, and the embodiments of this application are not limited thereto. For example, Figure 8 may also include a heat dissipation device, which can be connected to the heat recovery device; or, the heat recovery device in Figure 8 may be used to implement the function of the aforementioned heat dissipation device, in which case the heat dissipation device may not be included in Figure 8.

[0129] 7. Detection device

[0130] Optionally, the device 100 also includes a detection device.

[0131] The detection device, also known as a voltage and current detection device, is used to detect temperature-related information in the phase change material region. This detection device may be located within or outside the thermal management unit; there is no limitation on this. The detection device may be connected to or in contact with the thermal management unit; alternatively, it may be in contact with the phase change material region to detect the temperature or temperature-related parameters of the phase change material.

[0132] Specifically, in scenarios where the phase change material region exhibits high temperatures, such as those caused by radio frequency signals (e.g., high-power radio frequency signals) or electrothermal-driven phase change, the thermal management device addresses these conditions. A significant temperature difference exists between the first and second conductive structures, causing the thermoelectric structure (i.e., the thermoelectric material) to generate voltage or current due to this temperature difference. By detecting changes in the electrical signal, the temperature surrounding the phase change material can be measured in real time. This allows the controller to provide appropriate feedback on the device's power capacity and driving electrical parameters. As shown in Figure 8, the device 100 may include a detection device that can determine the temperature of the phase change material region by detecting the voltage or circuitry of the thermoelectric structure.

[0133] 8. Phase change material and at least one conductive structure

[0134] Optionally, the device 100 further includes a phase change material and / or at least one conductive structure. Specifically, the radio frequency switch (such as a phase change radio frequency switch) in the device 100 includes the phase change material and / or at least one conductive structure.

[0135] Phase change materials (PCMs) are a class of materials whose electrical conductivity can change under alterations in external environments such as electricity, heat, and light. PCMs exist in at least two electrical states, such as a high-resistance state and a low-resistance state. PCMs include, but are not limited to, at least one of the following: chalcogenide PCMs, insulator-metal PCMs, and transition metal chalcogenides. For example, chalcogenide PCMs may include at least one of the following: germanium-antimony-tellurium (Ge-Sb-Te) alloy components, indium-antimony (In-Sb-Te) alloys, and germanium telluride (GeTe) alloys. For example, insulator-metal PCMs may include at least one of the following: vanadium oxide (VOx), niobium oxide (NbOx), and titanium oxide. For example, transition metal chalcogenides may include at least one of the following: molybdenum telluride (MoTe2), tantalum diselenide (TaSe2), tantalum disulfide (TaS2), and molybdenum disulfide (MoS2).

[0136] In this context, a conductive structure refers to a structure that can conduct electricity. As an example, the conductive structure is a metal structure, such as the metals shown in Figures 1, 5, 6, and 8, and the first and second metal structures shown in Figure 7. For ease of explanation, this application primarily uses metal structures as examples. It can be understood that any structure capable of conducting electricity is applicable to the embodiments of this application. Taking device 100 as an example of a radio frequency switch assembly, optionally, at least one metal structure (i.e., an example of at least one conductive structure) is in contact with a phase change material to control the on / off state of the radio frequency switch. For example, in device 100, two or more metal structures are in contact with a phase change material, the phase change material is located between the two or more metal structures, and the phase change material has at least two electrical states (e.g., a high-resistance state and a low-resistance state); when in the low-resistance state, the metal structure forms an electrical path with the phase change material; when in the high-resistance state, the metal structure forms an electrical open circuit with the phase change material.

[0137] The components have been described above. It is understood that this application does not limit the components included in the device 100. For example, considering the thermoelectric conversion characteristics of thermoelectric structures (i.e., thermoelectric materials), a thermoelectric conversion functional module can also be added to the device 100 to expand the functionality and application scenarios of the device 100.

[0138] The location and three-dimensional structure of each component are described below.

[0139] Figures 9 and 10 are schematic diagrams showing the positions of the components in the apparatus 100 according to embodiments of this application.

[0140] As shown in Figure 9, the device 100 may include a first conductive structure, a resistance heater, a metal structure (such as a first metal structure and a second metal structure), a thermally conductive insulating medium, and a substrate. One side of the substrate has a metal structure (referred to as the first metal structure for distinction), which can be used for conduction to achieve signal (such as radio frequency signal) transmission. The other side of the substrate is in contact with the thermally conductive insulating medium and the resistance heater. Specifically, the resistance heater can be disposed above the substrate and in contact with the thermally conductive insulating medium. The resistance heater is in contact with the thermally conductive insulating medium, as shown in Figure 9. The thermally conductive insulating medium is located below (e.g., directly below) and in contact with the phase change material, so that the thermal pulse generated by the resistance heater can be transmitted to the phase change material through the thermally conductive insulating medium, thereby realizing the change of state of the phase change material. The phase change material is in contact with the metal structure (referred to as the second metal structure for distinction) to form an electrical path or an electrical open circuit, thereby controlling the on / off state of the radio frequency switch. The first conductive structure in the thermal management device is in contact with the thermally conductive insulating medium, so that the first conductive structure can conduct heat to the phase change material region through the thermally conductive insulating medium.

[0141] Figure 10 is similar to Figure 9, except that the device 100 shown in Figure 10 also includes a passivation layer covering the phase change material. This passivation layer protects the phase change material, such as preventing oxidation. Furthermore, as shown in Figure 10(a), the resistance heater can be disposed on the substrate and in contact with a thermally conductive insulating medium; or, as shown in Figure 10(b), the resistance heater can also contact the substrate through a through-hole (i.e., a through-hole on the substrate), in other words, the resistance heater is located on the through-hole of the substrate. Moreover, the surface in contact with the resistance heater in this through-hole is provided with metal to achieve electrical conductivity.

[0142] Figure 11 is a three-dimensional structural schematic diagram of the device 100 according to an embodiment of this application. As shown in Figure 11, the device 100 includes a phase change state switching device, a thermal management device, a phase change material, a metal structure (such as a first metal structure and a second metal structure), a thermally conductive insulating medium (such as a first thermally conductive insulating medium and a second thermally conductive insulating medium), a substrate, a thermally conductive medium (i.e., an example of a heat dissipation device), and a passivation layer. The substrate can serve as a support for the device and a transmission medium for the radio frequency signal channel. The lower surface of the substrate is a metal layer (i.e., a second metal structure), which serves as the metal ground of the radio frequency switch. The upper surface of the substrate includes two metal structures (i.e., first metal structures) as transmission lines for radio frequency signals. A phase change material is disposed between the two first metal structures, and the phase change material and the two first metal structures are in contact to form a radio frequency channel. The phase change material has at least two electrical states, including a high-resistance state and a low-resistance state. By switching between the high-resistance state and the low-resistance state of the phase change material, the on / off function of the radio frequency signal in the transmission channel can be realized. The passivation layer is located above and in contact with the phase change material (PCM), and can be used to protect the PCM, such as preventing oxidation. Below the PCM is a thermally conductive insulating medium (i.e., the first thermally conductive insulating medium). The resistance heater of the phase change state switching device is located below the first thermally conductive insulating medium, and its cross-sectional result is shown in Figure 9. The two ends of the resistance heater in the phase change state switching device are third conductive structures. These third conductive structures may not be covered by the first thermally conductive insulating medium, but are connected to the controller. The controller applies long-pulse, low-amplitude electrical pulses to the third conductive structures at both ends of the resistance heater to achieve phase change state switching from a high-resistivity state to a low-resistivity state; conversely, the controller applies narrow-pulse, high-amplitude electrical pulses to the third conductive structures at both ends of the resistance heater to achieve phase change state switching from a low-resistivity state to a high-resistivity state. During the phase change state switching process, the electrical pulse applied by the controller is converted into a thermal pulse (such as a Joule thermal pulse) on the resistance heater. The thermal pulse is conducted through the first thermally conductive insulating medium to the phase change material region covering the first thermally conductive insulating medium, thereby realizing the phase change state switching. A thermally conductive insulating medium (i.e., the second thermally conductive insulating medium, such as a low thermal conductivity medium, or simply a low thermal conductivity medium) can be provided between the first thermoelectric structure, the second thermoelectric structure and the substrate to reduce the rapid heat conduction between the hot and cold ends of the device and improve thermal management capabilities.

[0143] As shown in Figure 11, the thermal management device may include multiple (e.g., two or more) first conductive structures, multiple second conductive structures, multiple first thermoelectric structures, and multiple second thermoelectric structures. The second conductive structures, first thermoelectric structures, first conductive structures, and second thermoelectric structures are connected in series. The first conductive structures are in contact with a thermally conductive insulating medium (i.e., a high thermal conductivity medium, such as a high thermal conductivity medium, or simply a high thermal conductivity medium), and the second conductive structures are in contact with the thermally conductive medium. Since the radio frequency channel is in the middle of the device, to improve the thermal management performance of the thermal management device for the phase change material region, as shown in Figure 11, symmetrical thermal management devices can be arranged on the left and right sides of the radio frequency signal channel. Taking the example shown in Figure 11, the second conductive structures at all four ends of the device are connected to the controller. When the controller applies a voltage between the second conductive structures, a temperature difference will appear between the first and second conductive structures of the thermal management device. When current flows from the first thermoelectric structure into the first conductive structure, the first conductive structure is the cold end, and its temperature decreases; the second conductive structure is the hot end, and its temperature rises. A current-dependent temperature difference will appear between the first and second conductive structures. When a high-power radio frequency signal passes through the phase change material region, the high-power radio frequency signal may be converted into heat accumulation, causing the temperature of the phase change material region to rise. In this case, a thermal management device can be used to dissipate heat and cool the phase change material region. Furthermore, based on thermoelectric characteristics, other heat dissipation or cooling devices can be externally connected to the thermoelectric heat-conducting medium to improve the thermal management performance of the phase change material region. For details on the relevant solutions for each component, please refer to the preceding descriptions; they will not be repeated here.

[0144] Figure 12 is a schematic diagram of the simulation results of the phase-change radio frequency switch parameter S. As shown in Figure 12(a), the horizontal axis represents frequency, and the vertical axis represents the isolation S21 of the phase-change radio frequency switch in the off state, in decibels (dB). The curve represents the amplitude value of the radio frequency signal receiver when the phase-change material is in a high-resistivity state (conductivity 10 S / m) after applying a radio frequency signal to the radio frequency metal electrodes at both ends of the phase-change material. As shown in Figure 12(b), the horizontal axis represents frequency, and the vertical axis represents the insertion loss S21 of the phase-change radio frequency switch in the on state, in decibels (dB). The curve represents the insertion loss S21 of the phase-change radio frequency switch in a low-resistivity state (conductivity 10 S / m) after applying a radio frequency signal to the radio frequency metal electrodes at both ends of the phase-change material. 5 The amplitude value of the RF signal received at the S / m (s-meter) terminal. Assume the phase change material has a conductivity of 10 S / m in the high-resistivity state and 10 S / m in the low-resistivity state. 5 S / m indicates that the phase-change RF switch exhibits low insertion loss in the low-impedance state and good isolation characteristics in the high-impedance state, demonstrating good RF switch performance.

[0145] Figure 13 is a schematic diagram of the simulation results of the device proposed according to the embodiments of this application. As shown in Figure 13, when the current flows from V1 to V0 and the current magnitude is 15 mA, the first conductive structure is the cold end, and the temperature drops to -20°C; the second conductive structure is the hot end, and the temperature is room temperature (20°C). The temperature difference between the two ends is 40°C. Therefore, the first conductive structure absorbs heat from the contacting phase change material region through the thermally conductive insulating medium. When the current is changed to -15 mA, the first conductive structure becomes the hot end, and the temperature rises to 120°C; the second conductive structure becomes the cold end, and the temperature is room temperature (20°C). Therefore, the first conductive structure releases heat to the contacting phase change material region through the thermally conductive insulating medium.

[0146] The above mainly describes the device 100 provided in the embodiments of this application with reference to Figures 1 to 13. The solutions of this application (such as the device 100 described above, or the methods described below) can be applied to radio frequency (RF) switching elements and reconfigurable units, such as RF switching elements with high power capacity, high linearity, and high switching characteristics. The solutions of this application can also be applied to high-performance RF switches in wireless communication systems, including passive RF switches covering low and high frequency bands, high-power RF switches, and high-linearity RF switches, which are mainly used in communication technology for signal modulation, filtering, amplification, and synthesis. Besides communication technology, phase-change RF switches are also used in satellite communication, radar systems, and aerospace fields for signal switching, modulation, power control, and other applications. In these practical application environments, high-power, high-capacity RF signals are the main carriers of RF switching devices, and corresponding device and system integration is highly likely. In response to these practical application scenarios, compared with passive thermal management phase-change RF switches, the phase-change RF switch integrated device proposed in this application can solve the problems of heat accumulation due to loss when the phase-change RF device is operating under high-power RF signals, as well as the impact of thermal problems of other components on the switching performance and stability of the phase-change RF device during system integration by dynamically adjusting thermal management, thereby improving the power tolerance and performance stability of the device.

[0147] In addition to RF switches, phase-change RF devices can also serve as reconfigurable RF device components. Combined with functional circuits, they have great application potential in reconfigurable devices for wireless communication systems, including reconfigurable filters, reconfigurable capacitor combinations, adjustable attenuators, adjustable phase shifters, and reconfigurable receivers. Furthermore, phase-change RF switches can also be extended to basic reconfigurable functional units of multi-network logic circuits and smart antenna arrays. By integrating multiple RF switches with RF circuits, antenna units, active devices, etc., and performing corresponding logic control, a reconfigurable RF circuit network, a switch logic matrix, and a smart reconfigurable antenna array can be formed. The thermal management device proposed in this application can serve as a basic reconfigurable functional component and can also perform active and adjustable thermal management in these highly integrated reconfigurable RF circuit networks and reconfigurable antenna arrays, thereby solving the thermal problems of large-scale reconfigurable components.

[0148] It is understood that the aforementioned device can be a hardware module (such as a chip, chip system, electronic circuit, integrated circuit, etc.), or a software module, or a combination of software and hardware modules.

[0149] It can also be understood that the division of the various components (or parts, units, modules, or devices) in the aforementioned device 100 is merely a functional division. In actual implementation, multiple components can be combined or integrated into another system. For example, the heat dissipation device shown in Figure 1 can be deployed separately or integrated into the thermal management device. As another example, the heat recovery device and / or detection device shown in Figure 8 can be deployed separately or integrated into the thermal management device. Furthermore, the controller in Figure 1 or Figure 8 can be divided into multiple control modules (or multiple control components). Different control modules are used to implement different functions; for example, some control modules are used to control the first conductive structure to absorb or release heat to the phase change material region through the first thermally conductive insulating medium, while some control modules are used to control the phase change state switching device to generate thermal pulses (i.e., apply electrical pulses to the phase change state switching device).

[0150] This application also provides a method applicable to a thermal management device, which includes an electrical input terminal and a heat input / output terminal. The method includes: after electricity is input to the electrical input terminal, the heat input / output terminal is triggered to absorb or release heat in the region where the phase change material is located. Based on this method, after electricity is input to the electrical input terminal, the heat input / output terminal can be triggered (or controlled) to absorb or release heat in the region where the phase change material is located, thus achieving active thermal management of the region where the phase change material is located.

[0151] Alternatively, the method may further include: outputting the heat absorbed by the heat input / output terminal in the region where the phase change material is located. Based on this, if the heat input / output terminal absorbs heat in the region where the phase change material is located, the absorbed heat can be output.

[0152] Further optionally, the method also includes: recovering heat absorbed from the phase change material region; or, powering a device (such as the small device described above, such as a small base station, etc.) based on the heat absorbed from the phase change material region.

[0153] Alternatively, the method may further include detecting the temperature of the region where the phase change material is located. For example, detecting the current or voltage of the thermal management device to estimate the temperature of the region where the phase change material is located. Or, for another example, the temperature of the region where the phase change material is located may be detected directly.

[0154] The thermal management device can be referred to in the thermal management device of device 100 above, and will not be described in detail here. In addition, the electrical input terminal can refer to the second conductive structure described above, and the thermal input / output terminal can refer to the first conductive structure described above, and will not be described in detail here.

[0155] This application also provides a thermal management device, which includes the thermal management device described above.

[0156] This application embodiment also provides a communication device, which includes the thermal management device described above. Optionally, the communication device includes the device 100 described above.

[0157] One possible implementation is that the communication device is a radio frequency front-end device (such as a radio frequency front-end circuit).

[0158] Figure 14 is a schematic diagram of a communication device provided according to an embodiment of this application. As shown in Figure 14, the device can be a radio frequency front-end circuit. The device may include a radio frequency chip (such as a radio frequency integrated circuit (RFIC)) and a radio frequency front-end module (FEM).

[0159] As an example, radio frequency (RF) chips can be used to modulate and demodulate RF signals, and can upconvert (i.e. increase the frequency of RF signals) and downconvert (decrease the frequency of RF signals).

[0160] As an example, the RF front-end module may include an integrated RF switch device, namely the aforementioned device 100, which includes an RF switch (such as a phase-change RF switch) and a thermal management device. Further optionally, the RF front-end module may also include an RF power amplifier (PA) and a low-noise amplifier (LNA). The PA can be located on the transmit channel to amplify the power of the transmitted RF signal. The LNA can be located on the receive channel to amplify the power of the RF signal received by the antenna module. The integrated RF switch device can be used to switch the RF channel (transmit channel or receive channel) connected to the antenna module at different times. By utilizing the different electrical connection states of the integrated RF switch device (switching the antenna module's electrical connection with the transmit channel or receive channel), the RF front-end circuit can operate in a time-division dual (TDD) communication system. For example, in the time domain resource corresponding to the transmitted signal, the RF switch in the integrated RF switch device switches to the transmit channel, electrically connecting the transmit channel and the antenna module, and the RF signal is transmitted through the transmit channel to the antenna module and radiated externally. Alternatively, in the time domain resources corresponding to the received signal, the RF switch in the RF switch integrated device switches to the receiving channel, electrically connecting the receiving channel and the antenna module. The RF signal received by the antenna module is transmitted to the RF chip for processing through the receiving channel. In the transmitting channel of the RF front-end circuit, the PA is used to amplify the power of the RF signal to meet communication requirements.

[0161] Figure 14 above is an illustrative example, and the embodiments of this application are not limited thereto. For example, the device may also include other components.

[0162] Another possible implementation is that the communication device is a communication equipment (such as a terminal device or network device).

[0163] Terminal devices can include various devices with wireless communication capabilities, which can be used to connect people, objects, machines, etc. Terminal devices can be widely used in various scenarios, such as: cellular communication, D2D, V2X, peer-to-peer (P2P), M2M, MTC, IoT, virtual reality (VR), augmented reality (AR), industrial control, autonomous driving, telemedicine, smart grids, smart furniture, smart offices, smart wearables, smart transportation, smart cities, drones, robots, remote sensing, passive sensing, positioning, navigation and tracking, autonomous delivery, etc. Terminal devices can be terminals in any of the above scenarios, such as MTC terminals, IoT terminals, etc. Terminal equipment can be user equipment (UE), terminal, fixed equipment, mobile station equipment or mobile equipment, subscriber unit, handheld device, vehicle-mounted equipment, wearable device, cellular phone, smartphone, session initiation protocol (SIP) phone, wireless data card, personal digital assistant (PDA), computer, tablet computer, laptop computer, wireless modem, handset, laptop computer, computer with wireless transceiver capability, smart book, vehicle, satellite, global positioning system (GPS) device, target tracking device, aircraft (e.g., drone, helicopter, multiple helicopters, four helicopters, or airplanes), ship, remote control device, smart home device, industrial equipment, transportation vehicle with wireless communication capability, communication module, or roadside unit with terminal function, all conforming to the 3rd generation partnership project (3GPP) standard. The device may be a wireless communication unit (RSU), or a device built into the aforementioned device (e.g., a communication module, modem, or chip in the aforementioned device), or other processing devices connected to the wireless modem.

[0164] The network device can be a device used to communicate with the terminal device. This network device can also be called an access network device or a wireless access network device, such as a base station. In this embodiment, the network device can refer to a radio access network (RAN) node (or device) that connects the terminal device to the wireless network. A base station can broadly encompass, or be replaced by, various names including: NodeB, evolved NodeB (eNB), next-generation NodeB (gNB), relay station, access point, transmitting and receiving point (TRP), transmitter, master station, auxiliary station, multiple standard radio (MSR) node, home base station, network controller, access node, wireless node, access point (AP), transmission node, transceiver node, baseband unit (BBU), remote radio unit (RRU), active antenna unit (AAU), remote radio head (RRH), central unit (CU), distributed unit (DU), positioning node, etc. A base station can be a macro base station, micro base station, relay node, donor node, or a combination thereof. A base station can also refer to a communication module, modem, or chip installed within the aforementioned equipment or apparatus. Base stations can also be mobile switching centers, devices that perform base station functions in D2D, V2X, and M2M communications, network-side devices in future communication networks, and devices that perform base station functions in future communication systems. Base stations can support networks with the same or different access technologies.

[0165] Figure 15 is another schematic diagram of a communication device provided according to an embodiment of this application. As shown in Figure 15, the communication device may include a processor, a radio frequency module, and an antenna module.

[0166] The radio frequency module may include the aforementioned device 100. Alternatively, the radio frequency module may include the device shown in FIG14.

[0167] The antenna module can be used to transmit radio frequency signals processed by the radio frequency module to the outside, or to receive external signals and transmit them to the radio frequency module.

[0168] A processor can be used to execute computer programs or instructions, or to process data signals. For example, a processor is a central processing unit (CPU), but it can also be other general-purpose processors, digital signal processors (DSPs), application-specific integrated circuits (ASICs), field-programmable gate arrays (FPGAs), or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc. A general-purpose processor can be a microprocessor or any conventional processor.

[0169] Figure 15 above is an illustrative example, and the embodiments of this application are not limited thereto. For example, the device may also include other components.

[0170] The two implementation methods described above are illustrative examples, and the embodiments in this application are not limited thereto.

[0171] The above description is merely a specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. An integrated device, characterized by Comprising: a first thermally conductive insulating medium in contact with a phase change material; a thermal management device comprising a first electrically conductive structure and a second electrically conductive structure, the first electrically conductive structure being connected to the phase change material through the first thermally conductive insulating medium, the second electrically conductive structure being configured to input an electric voltage, and the first electrically conductive structure being configured to absorb or release heat from a region of the phase change material through the first thermally conductive insulating medium when the second electrically conductive structure is powered.

2. The integrated device of claim 1, wherein: the integrated device further comprises a heat dissipation device configured to dissipate heat absorbed by the first electrically conductive structure from the region of the phase change material.

3. The integrated device of claim 1 or 2, wherein, the integrated device further comprises: the integrated device further comprises a controller configured to control the first electrically conductive structure to absorb or release heat from the region of the phase change material through the first thermally conductive insulating medium.

4. The integrated device of claim 3, wherein: the thermal management device comprises a first thermoelectric structure and a second thermoelectric structure, one end of the first thermoelectric structure being connected to one end of the second thermoelectric structure through the first electrically conductive structure, the other end of the first thermoelectric structure and the other end of the second thermoelectric structure being connected to the controller through the second electrically conductive structure, the first thermoelectric structure being different from the second thermoelectric structure.

5. The integrated device of claim 4, wherein: the integrated device further comprises a substrate, the phase change material, the first thermally conductive insulating medium, and the thermal management device being on or in contact with the substrate; one end of the first thermoelectric structure and one end of the second thermoelectric structure being connected through the first electrically conductive structure in a direction perpendicular to the substrate, the second electrically conductive structure being above the first thermoelectric structure and the second thermoelectric structure.

6. The integrated device of claim 5, wherein: the integrated device further comprises a second thermally conductive insulating medium between the substrate and the first thermoelectric structure and the second thermoelectric structure.

7. The integrated device of any one of claims 4-6, wherein, the first thermoelectric structure and the second thermoelectric structure being different comprises the first thermoelectric structure and the second thermoelectric structure having different thermoelectric properties.

8. The integrated device of any one of claims 4-7, wherein, the first thermoelectric structure and the second thermoelectric structure being different comprises the first thermoelectric structure and the second thermoelectric structure having different at least one of the following parameters: Seebeck coefficient, Peltier coefficient, thermal conductivity, electrical conductivity, semiconductor type, carrier type, energy band structure.

9. The integrated device of any one of claims 1 to 8, wherein: the integrated device further comprises a phase change state switching device connected to the phase change material through the first thermally conductive insulating medium, the phase change state switching device comprising at least one third electrically conductive structure configured to input an electric pulse and a resistive heater configured to convert the electric pulse to a heat pulse to be transmitted to the phase change material through the first thermally conductive insulating medium to control a state of the phase change material.

10. The integrated device of claim 9, wherein, The first conductive structure is the same as one of the third conductive structures, or the first conductive structure is the phase change state switching device.

11. The integrated device of claim 9 or 10, wherein, The integrated device further comprises a substrate, and the phase change material, the first thermally conductive and insulating medium, and the thermal management device are on or in contact with the substrate, and the electric resistance heater is in contact with the substrate through a via on the substrate.

12. The integrated device of any one of claims 1 to 11, wherein, The integrated device further comprises a detection device for detecting temperature-related information of the region where the phase change material is located.

13. The integrated device of any one of claims 1 to 12, wherein, The thermal management device further comprises a heat recovery device for recovering heat absorbed by the first conductive structure from the region of the phase change material.

14. The integrated device of any one of claims 1 to 13, wherein, The integrated device further comprises at least one conductive structure in contact with the phase change material to control the on-off of the radio frequency switch.

15. The integrated device of any one of claims 1 to 14, wherein, The integrated device is a phase change radio frequency switch integrated device.

16. A thermal management device, characterized by, The thermal management device comprises a first conductive structure and a second conductive structure, The first conductive structure is connected to the phase change material through a thermally conductive and insulating medium, the second conductive structure is used for inputting voltage, and when the second conductive structure is powered on, the first conductive structure absorbs or releases heat from the region of the phase change material through the thermally conductive and insulating medium.

17. The thermal management device of claim 16, wherein, The thermal management device is the thermal management device according to any one of claims 1 to 13.

18. A thermal management method, comprising: The method is applied to a thermal management device comprising an electric input end and a thermal input / output end, and the method comprises: After the electric input end inputs electricity, the thermal input / output end absorbs or releases heat from the region of the phase change material.

19. The method of claim 18, wherein, The method further comprises: Outputting the heat absorbed by the thermal input / output end from the region of the phase change material.

20. The method of claim 18 or 19, wherein, The method further comprises: Recovering the heat absorbed from the region of the phase change material; or Supplying power to a device based on the heat absorbed from the region of the phase change material.

21. The method of any one of claims 18-20, wherein, The method further comprises: Detecting the temperature of the region where the phase change material is located.

22. A communications device, characterized by The integrated device according to any one of claims 1 to 15, or the thermal management device according to claim 16 or 17.

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