Solid-state imaging device and method for manufacturing solid-state imaging device

Abstract

[Problem] To improve Qe. [Solution] A solid-state imaging device is provided with a plurality of pixels. Each of the pixels is provided with an on-chip lens, a photoelectric conversion unit, a pixel circuit, and a filter. The on-chip lens concentrates incident light. The photoelectric conversion unit photoelectrically converts the incident light concentrated by the on-chip lens to output a signal. The pixel circuit processes the signal output from the photoelectric conversion unit. The filter has characteristics in transmission performance in relation to the incident angle of the incident light. The photoelectric conversion unit of each of the plurality of pixels photoelectrically converts light incident through the filter.

Description

Solid-state imaging device and method for manufacturing the same

[0001] The present disclosure relates to a solid-state imaging device and a method for manufacturing the solid-state imaging device.

[0002] Research is being conducted into how to efficiently receive infrared (IR) light, such as near-infrared (NIR) light and short-wave infrared (SWIR) light, in solid-state imaging devices. IR pixels that receive IR light have a layout that makes it easy to reflect light that passes through the wiring, in order to lengthen the optical path length within the silicon photodiode. In this case, light that is not absorbed by the photodiode is reflected, and this reflection causes losses, which is one of the causes of flare and a decrease in quantum efficiency (Qe).

[0003] Japanese Patent Publication No. 2022-030453

[0004] Therefore, one of the non-limiting problems that the embodiments of the present disclosure aim to solve is to improve Qe. The problem that the embodiments of the present disclosure aim to solve can also be, as some further non-limiting examples, a problem corresponding to the effects described in the embodiments. In other words, a problem that corresponds to at least one of the effects described in the description of the embodiments of the present disclosure can be the problem that the present disclosure aims to solve.

[0005] According to one embodiment, a solid-state imaging device includes a plurality of pixels. Each of the plurality of pixels includes an on-chip lens, a photoelectric conversion unit, a pixel circuit, and a filter. The on-chip lens collects incident light. The photoelectric conversion unit photoelectrically converts the incident light collected by the on-chip lens and outputs a signal. The pixel circuit processes the signal output from the photoelectric conversion unit. The filter has a characteristic of transmission performance with respect to the angle of incidence of the incident light. The photoelectric conversion unit of each of the plurality of pixels photoelectrically converts the light incident via the filter.

[0006] The filter may be disposed on the light incident surface side of the on-chip lens.

[0007] The filter may be disposed on the light incident surface side of the on-chip lens via a planarization layer.

[0008] The filter may be disposed on the light incident surface side of the on-chip lens via an anti-reflection film.

[0009] The on-chip lens may be made of a material having a higher refractive index than a planarizing film formed between the on-chip lens and the filter.

[0010] The filter may be disposed on the opposite side of the on-chip lens to the light incident surface.

[0011] The filter may have angle characteristics set for each of the photoelectric conversion units in accordance with the angle of incidence of light and / or the image height.

[0012] The filter may be formed from a one-dimensional photonic crystal.

[0013] The filter may be formed from a two-dimensional photonic crystal.

[0014] The filter may be formed by a plasmonic metasurface.

[0015] The filter may be formed by a dielectric metasurface.

[0016] The optical fiber may further include a metadirector on the incident surface side of the filter for controlling the phase of incident light.

[0017] At least one of the plurality of pixels may receive light in the infrared light band and output a signal.

[0018] At least one of the plurality of pixels may receive light in the visible light band and output a signal.

[0019] According to one embodiment, the above-described solid-state imaging device can also be manufactured by bonding a filter having a characteristic in transmission performance with respect to the angle of incidence of the incident light to a light incident surface side of an image sensor having a plurality of pixels, the pixel including: an on-chip lens that collects incident light; a photoelectric conversion unit that photoelectrically converts the incident light collected by the on-chip lens and outputs a signal; and a pixel circuit that processes the signal output from the photoelectric conversion unit.

[0020] 10. A block diagram schematically showing an example of a solid-state imaging device according to an embodiment. A cross-sectional view schematically showing an example of a pixel according to an embodiment. A cross-sectional view schematically showing an example of a pixel according to an embodiment. A cross-sectional view schematically showing an example of a pixel according to an embodiment. A cross-sectional view schematically showing an example of a pixel according to an embodiment. A cross-sectional view schematically showing an example of a pixel according to an embodiment. A cross-sectional view schematically showing an example of a pixel according to an embodiment. A plan view schematically showing an example of a pixel according to an embodiment. A view showing an example of an AA cross section in FIG. 8. A plan view schematically showing an example of a pixel according to an embodiment. A view showing an example of a BB cross section in FIG. 10. A view showing an example of a BB cross section in FIG. 10. A cross-sectional view showing an example of an angular response filter according to an embodiment. A plan view and a cross-sectional view showing an example of an angular response filter according to an embodiment. A plan view and a cross-sectional view showing an example of an angular response filter according to an embodiment. A cross-sectional view schematically showing an example of a pixel according to an embodiment. A block diagram showing an example of a general configuration of a vehicle control system. An explanatory diagram showing an example of installation positions of an outside vehicle information detection unit and an imaging unit.

[0021] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. The drawings are used for explanation purposes, and the shape, size, and size ratio of each component in an actual device do not necessarily have to be the same as those shown in the drawings. Furthermore, since the drawings are simplified, components necessary for implementation other than those shown in the drawings are also assumed to be appropriately provided.

[0022] This disclosure will explain each configuration in the following order: 1. Configuration of solid-state imaging device 2. Pixel configuration 3. Modified example of pixel configuration 4. Configuration for controlling incident light 5. Application example

[0023] 1. Configuration of solid-state imaging device

[0024] 1 is a block diagram schematically illustrating an example of a solid-state imaging device according to an embodiment. Note that the feature of the present disclosure resides in the pixel structure, and therefore the present disclosure is not limited to this diagram and can be applied to general pixels.

[0025] The solid-state imaging device 1 includes, for example, a pixel array 10, a control circuit 12, a first scanning circuit 14, a second scanning circuit 16, and a signal processing circuit 18. The solid-state imaging device 1 captures images in which at least some of the pixels are capable of receiving light in the infrared band. The infrared light may be, for example, light in the NIR or SWIR band, but is not limited thereto. The solid-state imaging device 1 may also be configured to receive light in the visible light band or ultraviolet band in addition to the infrared light.

[0026] The pixel array 10 has pixels arranged in a two-dimensional array. For example, the pixels are arranged in an array in the pixel array 10 along a first direction and a second direction intersecting the first direction. Each pixel has a photoelectric conversion unit, and outputs a signal corresponding to the intensity of light received by the photoelectric conversion unit. The signal output from the photoelectric conversion unit is converted into an appropriate analog signal by a pixel circuit provided in the pixel, and is output to a signal processing circuit 18.

[0027] The control circuit 12 is a circuit that controls imaging in the pixel array 10. The control circuit 12 may also control other processes in the solid-state imaging device 1. For example, the control circuit 12 sends control signals to the first scanning circuit 14 and the second scanning circuit 16 to control imaging in the pixel array 10. The control circuit 12 also sends control signals to the signal processing circuit 18 to process signals output from the pixel array 10.

[0028] The first scanning circuit 14 outputs a signal that switches the driving state by selecting a line for pixels that belong to the same line along the first direction in the pixel array 10. The first scanning circuit 14 outputs a signal that selects a line in the pixel array 10 to each pixel via a signal line 140.

[0029] The second scanning circuit 16 outputs signals to pixels that belong to the same column in the second direction in the pixel array 10 so that output from pixels that belong to the line selected by the first scanning circuit 14 is performed appropriately. The second scanning circuit 16 outputs signals to pixels that belong to the column in the pixel array 10 via signal lines 160.

[0030] The signal processing circuit 18 is a circuit that appropriately processes signals output from pixels arranged in the pixel array 10 and converts them into signals suitable for, for example, image signals, video signals, etc. and outputs them. The signal processing circuit 18 may, for example, include an analog-to-digital converter (ADC) that converts analog signals output from the pixels into digital signals. The signal processing circuit 18 receives signals from the pixels arranged in the pixel array 10 via the signal processing circuit 18-0.

[0031] In the present disclosure, the solid-state imaging device 1 formed with these configurations may acquire information using either a rolling shutter type or a global shutter type imaging format. In other words, the solid-state imaging device 1 may include any pixel circuit within the scope consistent with the features of the present disclosure.

[0032] 2. Pixel structure

[0033] The basic pixel configuration of the present disclosure will be described below. The pixels included in the pixel array 10 are provided with a filter (hereinafter referred to as an angle-responsive filter) on the incident surface side of the photoelectric conversion region, the filter having a transmission performance characteristic in response to the angle of incidence of incident light. In other words, the angle-responsive filter is an optical element that transmits only light incident at a desired angle and reflects or barely transmits light incident at any other angle.

[0034] (First embodiment)

[0035] FIG. 2 is a diagram schematically illustrating an example of a pixel according to an embodiment. As shown in the figure, each pixel 100 includes an on-chip lens 204, a photoelectric conversion region 206, and a pixel circuit formed in a pixel circuit layer 210. These components can be formed by stacking them, for example, in a third direction that intersects with the first and second directions. The pixel array 10 includes the pixels 100 arranged in a two-dimensional array. The pixel array 10 further includes an angle-responsive filter 200 and a planarization layer 202 on the light incident surface side of the pixel 100.

[0036] The on-chip lens 204 is a lens that is disposed on the light incident side of the photoelectric conversion region 206 and focuses incident light onto the photoelectric conversion region 206. Note that a lens may be provided on the incident surface side of the on-chip lens 204 so as to cover the incident surface side of part or all of the pixel array 10. In one embodiment, an on-chip lens 204 is provided for each pixel 100, but this is not limiting. For example, one on-chip lens 204 may be provided across multiple pixels, such as 2 × 2 pixels.

[0037] The photoelectric conversion region 206 outputs a signal according to the intensity of the incident light through photoelectric conversion. In each pixel 100, the photoelectric conversion region 206 outputs an analog signal based on the intensity of the light collected by the on-chip lens 204 to a pixel circuit corresponding to the pixel 100 formed in the pixel circuit layer 210.

[0038] The pixel separation film 208 is an insulating film that forms a blocking separation film that insulates adjacent photoelectric conversion regions 206. In each pixel 100, the photoelectric conversion regions 206 are separated by the pixel separation film 208, and the pixels as light receiving elements are separated. The pixel separation film 208 is not limited to an insulator, and may, for example, use a conductor or semiconductor on the surface or part of the interior.

[0039] Furthermore, although the pixel isolation film 208 is a necessary component in pixels using a Si substrate with some exceptions, the contents of the present disclosure are not limited to this, and for example, the pixel isolation film 208 is not an essential component in pixels using an InGaAs substrate. In other words, the pixel isolation film 208 is a component that can be omitted depending on the configuration of the pixel 100.

[0040] The pixel circuit layer 210 is a layer in which a circuit is formed that appropriately processes the photoelectrically converted signal output from the photoelectric conversion region 206. The signal output from the photoelectric conversion region 206 is appropriately processed through the circuit formed in this pixel circuit layer 210 and output to the outside.

[0041] The planarization layer 202 is a planarization film formed on the on-chip lens 204. For example, the planarization layer 202 is formed to provide the angle-responsive filter 200 on the light incident surface side of the on-chip lens 204. As will be described later, the refractive index of the planarization layer 202 may be appropriately defined.

[0042] The angle-responsive filter 200 is a filter that transmits light incident on the incident surface of the sensor according to its angle characteristics. The angle-responsive filter 200 can be disposed on the incident surface side relative to the on-chip lens 204. By passing through the angle-responsive filter 200, the pixel 100 allows the incident light from an angle controlled by the angle-responsive filter 200 to be appropriately incident on the photoelectric conversion region 206 by the on-chip lens 204, and outputs a signal photoelectrically converted by the photoelectric conversion region 206. In other words, the photoelectric conversion region 206 in each pixel 100 photoelectrically converts the light that has entered through the angle-responsive filter 200 and is dependent on the incident angle.

[0043] As can be seen from the drawing, the angle-responsive filter 200 is disposed on the light incident surface side of the on-chip lens 204 with the planarization layer 202 interposed therebetween.

[0044] (Second embodiment)

[0045] 2 is shown as an example, and the present invention is not limited to this configuration. For example, as shown in FIG. 3, a configuration may be adopted in which an insulating layer 212 is provided between the on-chip lens 204 and the photoelectric conversion region 206. In this case, the insulating layer 212 may have an uneven shape that does not reflect light incident from above in the drawing, but appropriately reflects light incident from below and causes the light to re-enter the photoelectric conversion region 206. This insulating layer 212 may be an insulating film formed integrally with the pixel isolation film 208.

[0046] When the angular responsive filter 200 is disposed closer to the light incident surface than the on-chip lens 204, as in the first or second embodiment, the planarization layer 202 is desirably formed of a material having a lower refractive index than the on-chip lens 204. As a non-limiting example, the on-chip lens 204 may be formed of a material such as SiO2, SiN, Ta2O5, TiO2, HfO2, SiC, Si, SiGe, or Si, and the planarization layer 202 is desirably formed of a material having a lower refractive index than the selected material. It is desirable that the same refractive index relationship apply to the following embodiments as well.

[0047] Such a relationship in refractive index makes it possible to suppress the occurrence of reflection at the interface between the planarization layer 202 and the on-chip lens 204, and allows light that has passed through the angular responsive filter 200 having an angular response to be efficiently propagated to the photoelectric conversion region 206.

[0048] (Third embodiment)

[0049] 4 is a cross-sectional view schematically illustrating an example of a pixel according to an embodiment. The solid-state imaging device 1 can further include an anti-reflection film 214 on the incident surface side of the angular responsive filter 200 of the pixel 100. The anti-reflection film 214 may also serve as a planarization layer. That is, the angular responsive filter 200 may be disposed on the light incident surface side of the on-chip lens 204 via the anti-reflection film 214.

[0050] By providing the anti-reflection film 214 on the incident surface side, the pixel 100 can suppress reflection of incident light on the incident surface, thereby enabling the pixel 100 to further improve the efficiency and accuracy of acquiring a signal from the incident light.

[0051] In the first to third embodiments described above, in which the angular-responsive filter 200 is provided on the incident surface side of the planarization layer 202, the manufacturing method can arrange the angular-responsive filter 200 at appropriate timing for a typical front-side formed image sensor and a rear-side formed image sensor. These processes enable the formation of the solid-state imaging device 1 by appropriately mounting the angular-responsive filter 200 in a typical image sensor process. On the other hand, it is also possible to arrange the angular-responsive filter 200 on an image sensor that has already been formed.

[0052] 5 illustrates a non-limiting example of implementing an angularly-responsive filter 200 on a pre-formed image sensor, or at least a pre-formed pixel array 10. The solid-state imaging device 1 can also be manufactured by implementing the angularly-responsive filter 200 on a pre-formed image sensor, rather than implementing the angularly-responsive filter 200 during the formation of the image sensor as described above.

[0053] In an image sensor having an on-chip lens 204 and a planarization layer 202, an angle-responsive filter 200 is formed on a support substrate 216 on the light incident surface side, and this angle-responsive filter 200 is bonded to the light incident surface side of the planarization layer 202, thereby forming a solid-state imaging device 1.

[0054] In this manner, the angular-responsive filter 200 in the present disclosure may be formed by incorporating the angular-responsive filter 200 into the solid-state imaging device 1 during the manufacturing process, or may be formed by bonding a new angular-responsive filter 200 to the incident surface side of an already completed image sensor, as shown in FIG. 5.

[0055] 3. Modified Examples of Pixel Configuration

[0056] Several typical examples have been described above, and variations thereof will be described below.

[0057] (Fourth embodiment)

[0058] 6 is a cross-sectional view schematically illustrating an example of a pixel according to an embodiment. In the above-described embodiments, the angularly responsive filter 200 is provided closer to the light incident surface than the on-chip lens 204, but this is not limiting. The angularly responsive filter 200 may be disposed on the opposite side of the on-chip lens 204 from the light incident surface, i.e., on the photoelectric conversion region 206 side.

[0059] Although not shown in the figure, a planarization film may be further provided on at least one of the on-chip lens 204 side and the photoelectric conversion region 206 side of the angular responsive filter 200. Of course, it is also possible to provide an anti-reflection film on the incident surface side of the photoelectric conversion region 206 as in Fig. 3, or an anti-reflection film on the incident surface side of the planarization layer 202 as in Fig. 4.

[0060] (Fifth embodiment)

[0061] In the above-described embodiments, no particular reference is made to the angle at which the transmittance of the angle-responsive filter 200 becomes high, and for example, a filter having the same angular response performance can be used across the entire surface of the pixel array 10. In the present embodiment, a non-limiting example will be described in which the transmittance of the pixel array 10 becomes high at different angles.

[0062] 7 is a cross-sectional view showing an example of a pixel according to an embodiment. For example, the figure shows pixels 100 arranged at different positions in a pixel array 10. The arrows on the incident surface side of the pixel 100 indicate the angle at which the transmittance of the angular-responsive filter 200 becomes high.

[0063] As shown in this figure, angle-responsive filters 200 with different response angles at which transmittance is high can be provided depending on the position in pixel array 10. For example, angle-responsive filter 200A is a filter that has high transmittance for light incident at an angle of 0 degrees with respect to the incident surface of pixel 100, and angle-responsive filter 200B is a filter that has high transmittance for light incident at an angle tilted more to the left side of the drawing than angle-responsive filter 200A.

[0064] As described above, this difference in angle may vary depending on the position in pixel array 10. For example, angular-responsive filter 200 may be configured such that the closer to the center of pixel array 10, the higher the transmission performance of angular-responsive filter 200A for incident light at angles close to perpendicular to the incident surface, and the closer to the edge region of pixel array 10, the higher the transmission performance of angular-responsive filter 200B, and even higher than angular-responsive filter 200B, at angles greater than the perpendicular direction.

[0065] 1, the angular-responsive filter 200 can have higher transmittance characteristics for angles from the negative side to the positive side in the first direction as it moves toward the positive side in the third direction, as in the angular-responsive filter 200B, for pixels 100 that are shifted toward the left from the center of the pixel array 10. For example, the angular-responsive filter 200 can have higher transmittance characteristics for angles from the negative side to the positive side in the second direction as it moves toward the positive side in the third direction as it moves toward the top of the pixel array 10 from the center of the pixel array 10.

[0066] Furthermore, for a pixel 100 that is shifted from the center of the pixel array 10 to the lower right in the drawing, the angular-responsive filter 200 can have higher transmittance characteristics for angles from the positive side to the negative side in the first direction and the second direction as it moves toward the positive side in the third direction. In this way, as a non-limiting example, the angular response characteristics of the angular-responsive filter 200 can be set so as to have higher transmittance characteristics for angles toward the center of the pixel array 10.

[0067] As another example, it is also possible to change and arrange the angular response characteristics of the angular-responsive filter 200 so that the angular characteristics change depending on the image height. For example, if an optical system is provided on the entire incident surface side of the pixel array 10, the angle at which the angular-responsive filter 200 has a high response characteristic may be set depending on the distance from the optical axis of this optical system. In this case, the angle at which the angular-responsive filter 200 has a high response performance may also be set based on the direction of deviation from the optical axis.

[0068] (Sixth embodiment)

[0069] 8 is a plan view of a portion of a pixel array 10 according to one embodiment. Pixel 100G receives green light and outputs a signal corresponding to the intensity of the green light. Pixel 100R receives red light and outputs a signal corresponding to the intensity of the red light. Pixel 100B receives blue light and outputs a signal corresponding to the intensity of the blue light.

[0070] The arrangement of the colors is shown as an example of a Bayer array, but is not limited to this.

[0071] 9 is a diagram showing an example of a cross section taken along line AA in FIG. 8. As an example of a configuration for receiving light of each color, the pixel 100 can be provided with a color filter 218 corresponding to each color. As shown in the figure, in pixel 100G, light passes through color filter 218G and enters photoelectric conversion region 206. In pixel 100R, light passes through color filter 218R and enters photoelectric conversion region 206.

[0072] The color filter 218G is a filter that transmits green light. The color filter 218R is a filter that transmits red light. By allowing light that passes through the color filter 218 corresponding to each color to enter the photoelectric conversion region 206 in this manner, each pixel 100 outputs a signal corresponding to each color. By combining these signals corresponding to the colors of light, the solid-state imaging device 1 can acquire image / video information in the visible light band.

[0073] In this way, the solid-state imaging device 1 can be configured to include an angle-responsive filter 200 in an image sensor that receives light in the general visible light band and generates image / video information.

[0074] (Seventh embodiment)

[0075] 10 is a plan view showing an example of a pixel in another embodiment equipped with a color filter. Pixel 100IR receives light in the infrared band and outputs a signal corresponding to the intensity of the light in the infrared band. The arrangement of colors in this embodiment is also not limited and is given as an example.

[0076] Fig. 11 is a diagram showing an example of the cross section BB in Fig. 10. In the pixel 100B, light passes through the color filter 218B and enters the photoelectric conversion region 206. In the pixel 100IR, light passes through the color filter 218IR and enters the photoelectric conversion region 206.

[0077] The color filter 218B is a filter that transmits blue light. The color filter 218IR is a filter that transmits light in the infrared band. By allowing light that has passed through the color filter 218 corresponding to each color and infrared band to enter the photoelectric conversion region 206 in this manner, each pixel 100 outputs a signal corresponding to each color. By processing signals containing light in the infrared band corresponding to these light colors, the solid-state imaging device 1 can acquire image / video information in the visible light band and information such as image / video information in the infrared band.

[0078] Fig. 12 is a cross-sectional view taken along the line BB in Fig. 10 showing another example of a configuration for acquiring light in the infrared band. As shown in this figure, the pixels 100 that receive light in the visible light band, i.e., pixel 100G, pixel 100R, and pixel 100B, may each include a color filter 218 corresponding to each color, as well as an IR cut filter 218IRC that blocks light in the infrared band.

[0079] With this configuration, the pixel 100 that acquires image / video information in the visible light band can acquire information in which the influence of light in the infrared band is suppressed.

[0080] In the sixth and seventh embodiments, the pixel outputs a signal corresponding to the intensity of light of each color by transmitting light of each color band through a color filter, but the present invention is not limited to this. For example, the pixel 100 may be configured to output a signal corresponding to the intensity of light of a desired color using an organic photoelectric conversion film or the like without having a color filter.

[0081] Furthermore, the combination of color filters is not limited to RGB, but may be a combination of cyan, magenta, and yellow, or a combination including other color filters such as white or emerald.

[0082] 4. Configuration for controlling incident light

[0083] Next, various configurations for controlling the angle of incident light will be described, including the angle-responsive filter 200. First, some examples of implementations of the angle-responsive filter 200 will be given.

[0084] (Eighth embodiment)

[0085] 13 is a cross-sectional view illustrating an example of an implementation of an angularly responsive filter 200 according to an embodiment. The angularly responsive filter 200 can be formed in its cross-sectional shape by a one-dimensional photonic crystal structure in which different dielectric materials are stacked.

[0086] As shown in the figure, the angle-responsive filter 200 is formed by laminating, for example, dielectrics 300 and 302 having different dielectric constants. The angle at which the filter has high transmittance can be adjusted by the combination of the dielectrics to be laminated and the way in which the dielectrics are laminated.

[0087] (Ninth embodiment)

[0088] 14 is a diagram illustrating an example of an implementation of an angularly responsive filter 200 according to one embodiment. The top diagram shows a plan view of the angularly responsive filter 200, and the bottom diagram shows a CC cross-sectional view of the angularly responsive filter 200. The angularly responsive filter 200 may be formed from a two-dimensional photonic crystal.

[0089] As shown in these figures, the angularly responsive filter 200 may have a structure having a plurality of holes 306 in a semiconductor substrate 304. The dielectric 300 may be, for example, a semiconductor substrate such as Si. The holes 306 may be arranged in an array in the form of a regular hexagonal lattice, as shown in the plan view.

[0090] The angle at which the transmittance is high can be adjusted by the material of the semiconductor substrate 304 and the arrangement of the holes 306. The holes 306 may be, for example, holes of sub-wavelength size, and their pitch may also be sub-wavelength size.

[0091] (Tenth embodiment)

[0092] 15 illustrates an example implementation of an angularly responsive filter 200 according to one embodiment. The top diagram illustrates a plan view of the angularly responsive filter 200, and the bottom diagram illustrates a DD cross-sectional view of the angularly responsive filter 200. The angularly responsive filter 200 may be formed using a plasmonic metasurface.

[0093] As shown in these figures, the angularly responsive filter 200 may have a structure in which holes penetrating the conductor 308 are arranged in a two-dimensional array in the conductor 308. The holes in the conductor 308 may be arranged in a regular hexagonal lattice, as in the ninth embodiment described above.

[0094] The material of the conductor 308 may be, for example, any metal. The angle at which transmittance is high can be adjusted by adjusting the material of the conductor 308 and the size and pitch of the holes. The holes arranged in the conductor 308 may be, for example, sub-wavelength holes, and the pitch thereof may also be sub-wavelength.

[0095] (Eleventh embodiment)

[0096] 16 illustrates an example implementation of an angularly responsive filter 200 according to one embodiment. The top diagram illustrates a plan view of the angularly responsive filter 200, and the bottom diagram illustrates an E-E cross-sectional view of the angularly responsive filter 200. The angularly responsive filter 200 may be formed using a dielectric metasurface.

[0097] As shown in these figures, the angularly responsive filter 200 may have a structure in which a plurality of dielectric nanopillars 312 are embedded in a semiconductor substrate 310. The dielectric nanopillars 312 are nanopillars formed of a low-loss dielectric material. The arrangement of the dielectric nanopillars 312 may be a regular hexagonal lattice, as in the ninth embodiment.

[0098] The material of the semiconductor substrate 310 may be, for example, Si. Alternatively, instead of a semiconductor substrate, a substrate may be formed from an amorphous material such as glass, and low-loss dielectric nanopillars may be embedded in this substrate. The size of the dielectric nanopillars 312 may be, for example, subwavelength, and their pitch may also be subwavelength.

[0099] (Twelfth embodiment)

[0100] Although several examples of the angle-responsive filter 200 have been given above, the solid-state imaging device 1 may have a configuration for controlling the angle as a structure separate from the angle-responsive filter 200. For example, the solid-state imaging device 1 may be formed with a meta-deflector on the light incident surface of the image sensor unit.

[0101] 17 is a cross-sectional view illustrating an example of a pixel according to an embodiment. As shown in this figure, the pixel array 10 can include a metadeflector 220 on the incident surface side of the pixel 100. Light incident on the pixel 100 is transmitted at a predetermined angle through the metadeflector 220, and the angular response performance can be further improved by the angular responsive filter 200.

[0102] Although not shown, any low-loss configuration such as an anti-reflection coating, a planarizing coating, etc. may be provided between the metadeflector 220 and the angularly-responsive filter 200 .

[0103] With this configuration, as in the fifth embodiment described above, it is possible to set the angle of the angle-responsive filter 200 to a predetermined angle, without depending on parameters such as the position of the pixel 100 in the pixel array 10 or the image height.

[0104] As described above, according to the embodiments of the present disclosure, by providing an angle-responsive filter, it is possible to improve the transmittance of light from a predetermined angle in a pixel. Light that is reflected from a photoelectric conversion region and attempts to exit is unlikely to be reflected at the same angle as the incident angle. Therefore, by improving the transmittance of light from a predetermined angle, light that is reflected without being photoelectrically converted during its first pass through the photoelectric conversion region can be efficiently re-entered into the photoelectric conversion region.

[0105] As a result, it is possible to appropriately improve the utilization efficiency of the incident light, enabling the acquisition of more accurate intensity information. Furthermore, it is possible to suppress the occurrence of flare and improve quantum efficiency, especially for light in the infrared band.

[0106] 5. Application Examples The technology according to the present disclosure can be applied to various products. For example, the technology according to the present disclosure may be realized as a device mounted on any type of moving body, such as an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, personal mobility, an airplane, a drone, a ship, a robot, construction machinery, or agricultural machinery (tractor).

[0107] 18 is a block diagram showing a schematic configuration example of a vehicle control system 7000, which is an example of a mobile object control system to which the technology according to the present disclosure can be applied. The vehicle control system 7000 includes a plurality of electronic control units connected via a communication network 7010. In the example shown in FIG. 18, the vehicle control system 7000 includes a drive system control unit 7100, a body system control unit 7200, a battery control unit 7300, an outside-vehicle information detection unit 7400, an inside-vehicle information detection unit 7500, and an integrated control unit 7600. The communication network 7010 connecting these multiple control units may be an in-vehicle communication network conforming to any standard, such as a Controller Area Network (CAN), a Local Interconnect Network (LIN), a Local Area Network (LAN), or FlexRay (registered trademark).

[0108] Each control unit includes a microcomputer that performs arithmetic processing according to various programs, a memory unit that stores the programs executed by the microcomputer or parameters used in various calculations, and a drive circuit that drives various controlled devices. Each control unit includes a network I / F for communicating with other control units via a communication network 7010, and a communication I / F for communicating with devices or sensors inside and outside the vehicle via wired or wireless communication. Figure 18 illustrates the functional configuration of the integrated control unit 7600, including a microcomputer 7610, a general-purpose communication I / F 7620, a dedicated communication I / F 7630, a positioning unit 7640, a beacon receiving unit 7650, an in-vehicle device I / F 7660, an audio / video output unit 7670, an in-vehicle network I / F 7680, and a memory unit 7690. Similarly, the other control units also include a microcomputer, a communication I / F, a memory unit, and the like.

[0109] The drivetrain control unit 7100 controls the operation of devices related to the drivetrain of the vehicle according to various programs. For example, the drivetrain control unit 7100 functions as a control device for a driving force generating device for generating driving force for the vehicle, such as an internal combustion engine or a drive motor, a driving force transmission mechanism for transmitting driving force to the wheels, a steering mechanism for adjusting the steering angle of the vehicle, and a braking device for generating braking force for the vehicle. The drivetrain control unit 7100 may also function as a control device for an ABS (Antilock Brake System) or ESC (Electronic Stability Control), etc.

[0110] A vehicle state detection unit 7110 is connected to the drivetrain control unit 7100. The vehicle state detection unit 7110 includes at least one of a gyro sensor that detects the angular velocity of the axial rotational motion of the vehicle body, an acceleration sensor that detects the acceleration of the vehicle, or a sensor that detects the amount of operation of the accelerator pedal, the amount of operation of the brake pedal, the steering angle of the steering wheel, the engine rotation speed, the wheel rotation speed, etc. The drivetrain control unit 7100 performs arithmetic processing using signals input from the vehicle state detection unit 7110, and controls the internal combustion engine, the drive motor, the electric power steering device, the brake device, etc.

[0111] The body system control unit 7200 controls the operation of various devices equipped in the vehicle body according to various programs. For example, the body system control unit 7200 functions as a control device for a keyless entry system, a smart key system, a power window device, or various lamps such as head lamps, backup lamps, brake lamps, turn signals, and fog lamps. In this case, radio waves transmitted from a portable device that serves as a key or signals from various switches can be input to the body system control unit 7200. The body system control unit 7200 receives these radio waves or signals and controls the vehicle's door lock device, power window device, lamps, etc.

[0112] The battery control unit 7300 controls the secondary battery 7310, which is the power supply source for the drive motor, in accordance with various programs. For example, information such as battery temperature, battery output voltage, or remaining battery capacity is input to the battery control unit 7300 from a battery device equipped with the secondary battery 7310. The battery control unit 7300 performs arithmetic processing using these signals, and controls the temperature regulation of the secondary battery 7310 or a cooling device or the like equipped in the battery device.

[0113] The outside vehicle information detection unit 7400 detects information outside the vehicle equipped with the vehicle control system 7000. For example, at least one of an imaging unit 7410 and an outside vehicle information detection unit 7420 is connected to the outside vehicle information detection unit 7400. The imaging unit 7410 includes at least one of a ToF (Time Of Flight) camera, a stereo camera, a monocular camera, an infrared camera, and other cameras. The outside vehicle information detection unit 7420 includes at least one of an environmental sensor for detecting the current weather or climate, or a surrounding information detection sensor for detecting other vehicles, obstacles, pedestrians, etc. around the vehicle equipped with the vehicle control system 7000.

[0114] The environmental sensor may be, for example, at least one of a raindrop sensor that detects rain, a fog sensor that detects fog, a sunshine sensor that detects the level of sunshine, and a snow sensor that detects snowfall. The surrounding information detection sensor may be at least one of an ultrasonic sensor, a radar device, and a LIDAR (Light Detection and Ranging, Laser Imaging Detection and Ranging) device. The imaging unit 7410 and the outside vehicle information detection unit 7420 may each be provided as an independent sensor or device, or may be provided as a device in which multiple sensors or devices are integrated.

[0115] 19 shows an example of the installation positions of the imaging unit 7410 and the vehicle exterior information detection unit 7420. The imaging units 7910, 7912, 7914, 7916, and 7918 are installed, for example, at at least one of the front nose, side mirrors, rear bumper, back door, and the upper part of the windshield inside the vehicle cabin of the vehicle 7900. The imaging unit 7910 installed on the front nose and the imaging unit 7918 installed on the upper part of the windshield inside the vehicle cabin mainly acquire images of the front of the vehicle 7900. The imaging units 7912 and 7914 installed on the side mirrors mainly acquire images of the sides of the vehicle 7900. The imaging unit 7916 installed on the rear bumper or back door mainly acquires images of the rear of the vehicle 7900. The imaging unit 7918 provided on the top of the windshield inside the vehicle is primarily used to detect preceding vehicles, pedestrians, obstacles, traffic lights, traffic signs, lanes, etc.

[0116] 19 shows an example of the imaging ranges of the imaging units 7910, 7912, 7914, and 7916. Imaging range a indicates the imaging range of the imaging unit 7910 provided on the front nose, imaging ranges b and c indicate the imaging ranges of the imaging units 7912 and 7914 provided on the side mirrors, respectively, and imaging range d indicates the imaging range of the imaging unit 7916 provided on the rear bumper or back door. For example, by overlaying the image data captured by the imaging units 7910, 7912, 7914, and 7916, a bird's-eye view image of the vehicle 7900 viewed from above can be obtained.

[0117] The outside vehicle information detection units 7920, 7922, 7924, 7926, 7928, 7930 provided on the front, rear, sides, corners, and above the windshield inside the vehicle cabin of the vehicle 7900 may be, for example, ultrasonic sensors or radar devices. The outside vehicle information detection units 7920, 7926, 7930 provided on the front nose, rear bumper, back door, and above the windshield inside the vehicle cabin of the vehicle 7900 may be, for example, LIDAR devices. These outside vehicle information detection units 7920 to 7930 are mainly used to detect preceding vehicles, pedestrians, obstacles, etc.

[0118] Returning to FIG. 18 , the explanation continues. The outside-vehicle information detection unit 7400 causes the imaging unit 7410 to capture an image outside the vehicle and receives the captured image data. The outside-vehicle information detection unit 7400 also receives detection information from the connected outside-vehicle information detection unit 7420. If the outside-vehicle information detection unit 7420 is an ultrasonic sensor, a radar device, or a LIDAR device, the outside-vehicle information detection unit 7400 emits ultrasonic waves or electromagnetic waves and receives information on the received reflected waves. The outside-vehicle information detection unit 7400 may perform object detection processing or distance detection processing for people, vehicles, obstacles, signs, or text on the road surface, based on the received information. The outside-vehicle information detection unit 7400 may also perform environment recognition processing to recognize rainfall, fog, road conditions, etc., based on the received information. The outside-vehicle information detection unit 7400 may also calculate the distance to an object outside the vehicle based on the received information.

[0119] The outside vehicle information detection unit 7400 may also perform image recognition processing or distance detection processing to recognize people, vehicles, obstacles, signs, characters on the road, etc. based on the received image data. The outside vehicle information detection unit 7400 may perform processing such as distortion correction or alignment on the received image data, and may also generate an overhead image or a panoramic image by combining image data captured by different imaging units 7410. The outside vehicle information detection unit 7400 may also perform viewpoint conversion processing using image data captured by different imaging units 7410.

[0120] The interior information detection unit 7500 detects information inside the vehicle. The interior information detection unit 7500 is connected to, for example, a driver state detection unit 7510 that detects the state of the driver. The driver state detection unit 7510 may include a camera that captures an image of the driver, a biosensor that detects the driver's biometric information, or a microphone that collects sound inside the vehicle. The biosensor may be provided, for example, on the seat or steering wheel, and detect biometric information of a passenger sitting in the seat or the driver gripping the steering wheel. The interior information detection unit 7500 may calculate the driver's level of fatigue or concentration, or may determine whether the driver is dozing, based on the detection information input from the driver state detection unit 7510. The interior information detection unit 7500 may perform processing such as noise canceling on the collected audio signal.

[0121] The integrated control unit 7600 controls the overall operation of the vehicle control system 7000 in accordance with various programs. An input unit 7800 is connected to the integrated control unit 7600. The input unit 7800 is realized by a device that can be operated by a passenger, such as a touch panel, a button, a microphone, a switch, or a lever. Data obtained by voice recognition of voice input through a microphone may be input to the integrated control unit 7600. The input unit 7800 may be, for example, a remote control device using infrared or other radio waves, or an externally connected device such as a mobile phone or PDA (Personal Digital Assistant) that is compatible with the operation of the vehicle control system 7000. The input unit 7800 may be, for example, a camera, in which case the passenger can input information using gestures. Alternatively, data obtained by detecting the movement of a wearable device worn by the passenger may be input. Furthermore, the input unit 7800 may include, for example, an input control circuit that generates an input signal based on information input by a passenger or the like using the input unit 7800 and outputs the signal to the integrated control unit 7600. The passenger or the like operates the input unit 7800 to input various data to the vehicle control system 7000 and to instruct processing operations.

[0122] The storage unit 7690 may include a ROM (Read Only Memory) that stores various programs executed by the microcomputer, and a RAM (Random Access Memory) that stores various parameters, calculation results, sensor values, etc. The storage unit 7690 may also be realized by a magnetic storage device such as an HDD (Hard Disc Drive), a semiconductor storage device, an optical storage device, a magneto-optical storage device, or the like.

[0123] The general-purpose communication I / F 7620 is a general-purpose communication I / F that mediates communication with various devices present in the external environment 7750. The general-purpose communication I / F 7620 may implement a cellular communication protocol such as GSM (Global System of Mobile communications), WiMAX (registered trademark), LTE (Long Term Evolution), or LTE-Advanced (LTE-A), or other wireless communication protocols such as wireless LAN (also known as Wi-Fi (registered trademark)) or Bluetooth (registered trademark). The general-purpose communication I / F 7620 may connect to devices (e.g., application servers or control servers) present on an external network (e.g., the Internet, a cloud network, or an operator-specific network) via, for example, a base station or an access point. The general-purpose communication I / F 7620 may also connect to a terminal located near the vehicle (e.g., a terminal of a driver, pedestrian, or store, or an MTC (Machine Type Communication) terminal) using, for example, P2P (Peer To Peer) technology.

[0124] The dedicated communication I / F 7630 is a communication I / F that supports a communication protocol designed for use in vehicles. The dedicated communication I / F 7630 may implement a standard protocol such as WAVE (Wireless Access in Vehicle Environment), which is a combination of a lower layer IEEE802.11p and an upper layer IEEE1609, a dedicated short range communications (DSRC), or a cellular communication protocol. The dedicated communication I / F 7630 typically performs V2X communication, which is a concept including one or more of vehicle-to-vehicle communication, vehicle-to-infrastructure communication, vehicle-to-home communication, and vehicle-to-pedestrian communication.

[0125] The positioning unit 7640 performs positioning by receiving, for example, GNSS signals from GNSS (Global Navigation Satellite System) satellites (for example, GPS signals from GPS (Global Positioning System) satellites) and generates position information including the latitude, longitude, and altitude of the vehicle. Note that the positioning unit 7640 may identify the current position by exchanging signals with a wireless access point, or may obtain position information from a terminal such as a mobile phone, PHS, or smartphone that has a positioning function.

[0126] The beacon receiving unit 7650 receives, for example, radio waves or electromagnetic waves transmitted from radio stations or the like installed on the road, and acquires information such as the current location, congestion, road closures, required travel time, etc. The function of the beacon receiving unit 7650 may be included in the dedicated communication I / F 7630 described above.

[0127] The in-vehicle device I / F 7660 is a communication interface that mediates connections between the microcomputer 7610 and various in-vehicle devices 7760 present in the vehicle. The in-vehicle device I / F 7660 may establish wireless connections using wireless communication protocols such as wireless LAN, Bluetooth (registered trademark), NFC (Near Field Communication), or WUSB (Wireless USB). The in-vehicle device I / F 7660 may also establish a wired connection such as USB (Universal Serial Bus), HDMI (High-Definition Multimedia Interface), or MHL (Mobile High-Definition Link) via a connection terminal (and a cable, if necessary) not shown. The in-vehicle device 7760 may include, for example, at least one of a mobile device or a wearable device owned by a passenger, or an information device carried into or attached to a vehicle. The in-vehicle device 7760 may also include a navigation device that searches for a route to an arbitrary destination. The in-vehicle device I / F 7660 exchanges control signals or data signals with these in-vehicle devices 7760.

[0128] The in-vehicle network I / F 7680 is an interface that mediates communication between the microcomputer 7610 and the communication network 7010. The in-vehicle network I / F 7680 transmits and receives signals in accordance with a predetermined protocol supported by the communication network 7010.

[0129] The microcomputer 7610 of the integrated control unit 7600 controls the vehicle control system 7000 in accordance with various programs based on information acquired via at least one of the general-purpose communication I / F 7620, the dedicated communication I / F 7630, the positioning unit 7640, the beacon receiving unit 7650, the in-vehicle device I / F 7660, and the in-vehicle network I / F 7680. For example, the microcomputer 7610 may calculate control target values ​​for the driving force generating device, the steering mechanism, or the braking device based on acquired information inside and outside the vehicle, and output control commands to the drivetrain control unit 7100. For example, the microcomputer 7610 may perform cooperative control aimed at realizing functions of an Advanced Driver Assistance System (ADAS), including vehicle collision avoidance or impact mitigation, following driving based on the following distance, vehicle speed maintenance driving, vehicle collision warning, vehicle lane departure warning, etc. In addition, the microcomputer 7610 may perform cooperative control for the purpose of autonomous driving, which allows the vehicle to travel autonomously without relying on driver operation, by controlling a driving force generating device, steering mechanism, braking device, etc. based on information acquired about the vehicle's surroundings.

[0130] The microcomputer 7610 may generate three-dimensional distance information between the vehicle and objects such as surrounding structures and people, and create local map information including information about the vicinity of the vehicle's current location, based on information acquired via at least one of the general-purpose communication I / F 7620, the dedicated communication I / F 7630, the positioning unit 7640, the beacon receiving unit 7650, the in-vehicle device I / F 7660, and the in-vehicle network I / F 7680. The microcomputer 7610 may also predict dangers, such as a vehicle collision, the approach of a pedestrian, or entry into a closed road, based on the acquired information, and generate a warning signal. The warning signal may be, for example, a signal for generating a warning sound or turning on a warning lamp.

[0131] The audio / video output unit 7670 transmits at least one of audio and visual output signals to an output device capable of visually or audibly notifying vehicle occupants or the outside of the vehicle of information. In the example of FIG. 18 , an audio speaker 7710, a display unit 7720, and an instrument panel 7730 are illustrated as output devices. The display unit 7720 may include, for example, at least one of an on-board display and a head-up display. The display unit 7720 may have an AR (Augmented Reality) display function. The output device may be other devices, such as headphones, a wearable device such as a glasses-type display worn by the occupant, a projector, or a lamp. When the output device is a display device, the display device visually displays results obtained by various processes performed by the microcomputer 7610 or information received from other control units in various formats, such as text, images, tables, and graphs. Furthermore, when the output device is an audio output device, the audio output device converts an audio signal consisting of reproduced voice data or acoustic data into an analog signal and outputs it audibly.

[0132] In the example shown in FIG. 18 , at least two control units connected via the communication network 7010 may be integrated into a single control unit. Alternatively, each control unit may be composed of multiple control units. Furthermore, the vehicle control system 7000 may include another control unit not shown. In addition, in the above description, some or all of the functions performed by one control unit may be performed by another control unit. In other words, as long as information is transmitted and received via the communication network 7010, predetermined arithmetic processing may be performed by one of the control units. Similarly, a sensor or device connected to one control unit may be connected to another control unit, and multiple control units may transmit and receive detection information to each other via the communication network 7010.

[0133] A computer program for realizing each function of the solid-state imaging device 1 according to this embodiment described with reference to FIGS. 1 to 17 can be implemented in any control unit or the like. A computer-readable recording medium storing such a computer program can also be provided. Examples of the recording medium include a magnetic disk, an optical disk, a magneto-optical disk, and a flash memory. The computer program may also be distributed, for example, via a network without using a recording medium.

[0134] In the vehicle control system 7000 described above, the solid-state imaging device 1 according to this embodiment described using FIGS. 1 to 17 can be used in the imaging unit 7410, the outside vehicle information detection unit 7420, the driver state detection unit 7510, etc. of the application example shown in FIG. 18.

[0135] The above-described embodiment may be modified as follows.

[0136] (1) A solid-state imaging device comprising a plurality of pixels each having an on-chip lens that collects incident light, a photoelectric conversion unit that photoelectrically converts the incident light collected by the on-chip lens and outputs a signal, a pixel circuit that processes the signal output from the photoelectric conversion unit, and a filter that has a characteristic of transmission performance with respect to the angle of incidence of the incident light, wherein the photoelectric conversion unit of each of the plurality of pixels photoelectrically converts light that has entered through the filter.

[0137] (2) The solid-state imaging device according to (1), wherein the filter is disposed on a light incident surface side of the on-chip lens.

[0138] (3) The solid-state imaging device according to (2), wherein the filter is disposed on the light incident surface side of the on-chip lens via a planarizing layer.

[0139] (4) The solid-state imaging device according to (2) or (3), wherein the filter is disposed on the light incident surface side of the on-chip lens via an anti-reflection film.

[0140] (5) The solid-state imaging device according to any one of (2) to (4), wherein the on-chip lens is made of a material having a higher refractive index than a planarizing film formed between the on-chip lens and the filter.

[0141] (6) The solid-state imaging device according to (1), wherein the filter is disposed on the opposite side of the on-chip lens from the light incident surface.

[0142] (7) The solid-state imaging device according to any one of (1) to (6), wherein the filter has angle characteristics set for each of the photoelectric conversion units depending on the incident angle of light and / or the image height.

[0143] (8) The solid-state imaging device according to any one of (1) to (7), wherein the filter is formed of a one-dimensional photonic crystal.

[0144] (9) The solid-state imaging device according to any one of (1) to (7), wherein the filter is formed of a two-dimensional photonic crystal.

[0145] (10) The solid-state imaging device according to any one of (1) to (7), wherein the filter is formed of a plasmonic metasurface.

[0146] (11) The solid-state imaging device according to any one of (1) to (7), wherein the filter is formed by a dielectric metasurface.

[0147] (12) The solid-state imaging device according to any one of (1) to (11), further comprising a metadirector that controls the phase of incident light on the incident surface side of the filter.

[0148] (13) The solid-state imaging device according to any one of (1) to (12), wherein at least one of the plurality of pixels receives light in an infrared light band and outputs a signal.

[0149] (14) The solid-state imaging device according to any one of (1) to (13), wherein at least one of the plurality of pixels receives light in a visible light band and outputs a signal.

[0150] (15) A method for manufacturing a solid-state imaging device, comprising: attaching a filter having a characteristic in transmission performance for the angle of incidence of the incident light to a light incident surface side of an image sensor having a plurality of pixels, the pixels including: an on-chip lens that collects incident light; a photoelectric conversion unit that photoelectrically converts the incident light collected by the on-chip lens to output a signal; and a pixel circuit that processes the signal output from the photoelectric conversion unit.

[0151] The aspects of the present disclosure are not limited to the above-described embodiments and include various conceivable modifications, and the effects of the present disclosure are not limited to the above-described contents. The components in each embodiment may be appropriately combined and applied. In other words, various additions, modifications, and partial deletions are possible within the scope of the conceptual idea and intent of the present disclosure, which is derived from the content defined in the claims and their equivalents.

[0152] 1: solid-state imaging device, 10: pixel array, 100: pixel, 100G, 100R, 100B, 100IR: pixel, 200: angularly responsive filter, 200A, 200B: angularly responsive filter, 300, 302: dielectric, 304: semiconductor substrate, 306: hole, 308: conductor, 310: semiconductor substrate, 312: dielectric nanopillar, 202: planarization layer, 204: on-chip lens, 206: photoelectric conversion region, 208: pixel separation film, 210: pixel circuit layer, 212: insulating layer, 214: anti-reflection film, 216: support base, 218: color filter, 218G, 218R, 218B, 218IR: color filter, 218IRC: IR cut filter, 220: meta deflector, 12: control circuit, 14: first scanning circuit, 140: signal line, 16: second scanning circuit, 160: signal line, 18: signal processing circuit,

Claims

1. A solid-state imaging device comprising a plurality of pixels each having an on-chip lens that collects incident light, a photoelectric conversion unit that photoelectrically converts the incident light collected by the on-chip lens and outputs a signal, a pixel circuit that processes the signal output from the photoelectric conversion unit, and a filter that has a characteristic of transmission performance with respect to the angle of incidence of the incident light, wherein the photoelectric conversion unit of each of the plurality of pixels photoelectrically converts light that has entered through the filter.

2. The solid-state imaging device according to claim 1, wherein the filter is disposed on a light incident surface side of the on-chip lens.

3. The solid-state imaging device according to claim 2, wherein the filter is disposed on the light incident surface side of the on-chip lens via a planarizing layer.

4. The solid-state imaging device according to claim 2, wherein the filter is disposed on the light incident surface side of the on-chip lens via an anti-reflection film.

5. The solid-state imaging device according to claim 2, wherein the on-chip lens is formed of a material having a higher refractive index than a planarizing film formed between the on-chip lens and the filter.

6. The solid-state imaging device according to claim 1, wherein the filter is disposed on the opposite side of the on-chip lens from the light incident surface.

7. The solid-state imaging device according to claim 1, wherein the filter has angle characteristics set for each of the photoelectric conversion units according to the angle of incidence of light and / or the image height.

8. The solid-state imaging device according to claim 1, wherein the filter is formed of a one-dimensional photonic crystal.

9. The solid-state imaging device according to claim 1, wherein the filter is formed of a two-dimensional photonic crystal.

10. The solid-state imaging device according to claim 1, wherein the filter is formed by a plasmonic metasurface.

11. The solid-state imaging device according to claim 1, wherein the filter is formed by a dielectric metasurface.

12. The solid-state imaging device according to claim 1, further comprising a metadirector on the incident surface side of the filter for controlling the phase of incident light.

13. The solid-state imaging device according to claim 1, wherein at least one of the plurality of pixels receives light in the infrared light band and outputs a signal.

14. The solid-state imaging device according to claim 1, wherein at least one of the plurality of pixels receives light in the visible light band and outputs a signal.

15. A method for manufacturing a solid-state imaging device, comprising: attaching a filter having characteristics in transmission performance for the angle of incidence of the incident light to the light incident surface side of an image sensor having a plurality of pixels, the image sensor having a plurality of pixels each having an on-chip lens that collects incident light; a photoelectric conversion unit that photoelectrically converts the incident light collected by the on-chip lens and outputs a signal; and a pixel circuit that processes the signal output from the photoelectric conversion unit.

Images