High-frequency module and communication device

Abstract

This high-frequency module (1) comprises: a module substrate (90) having main surfaces (90a and 90b) facing each other; a duplexer (35) disposed on the module substrate (90) and including a filter (351) having a passband including a transmission band of an NTN band (E) and a filter (352) having a passband including a reception band of the NTN band (E); a power amplification circuit (13) disposed on one of the main surfaces (90a and 90b) and connected to the filter (351); and a low-noise amplification circuit (25) disposed on the other of the main surfaces (90a and 90b) and connected to the filter (352). In a plan view of the module substrate (90), the power amplification circuit (13) at least partially overlaps the low-noise amplification circuit (25).

Description

High frequency module and communication device

[0001] The present invention relates to a high-frequency module and a communication device.

[0002] In mobile communication devices such as mobile phones, the front-end circuits are becoming larger with the advancement of multi-band communication. Patent Document 1 discloses a single high-frequency module that integrates a low-band group (617 to 960 MHz) module, a mid-band group (1427 to 2200 MHz) module, and a high-band group (2300 to 2690 MHz) module for a terrestrial network (TN).

[0003] International Publication No. 2022 / 044456

[0004] The 3GPP (registered trademark) 3rd Generation Partnership Project is standardizing non-terrestrial networks (NTNs) to integrate satellite systems and other technologies into cellular communication systems. User equipment (UE) that supports NTNs in addition to TNs may require an increased number of modules, resulting in larger equipment sizes.

[0005] Therefore, the present invention provides a high-frequency module and a communication device that can reduce the size of the communication device.

[0006] A high-frequency module according to one aspect of the present invention includes a module substrate having first and second main surfaces facing each other, a duplexer disposed on the module substrate and including a first filter having a pass band including a transmission band of the NTN (Non-Terrestrial Network) band and a second filter having a pass band including a reception band of the NTN band, a power amplifier circuit disposed on one of the first and second main surfaces and connected to the first filter, and a first low-noise amplifier circuit disposed on the other of the first and second main surfaces and connected to the second filter, wherein the power amplifier circuit at least partially overlaps with the first low-noise amplifier circuit in a plan view of the module substrate.

[0007] A communication device according to one aspect of the present invention includes a signal processing circuit that processes a high-frequency signal, and the above-described high-frequency module that is configured to transmit the high-frequency signal between the signal processing circuit and an antenna.

[0008] According to the present invention, it is possible to reduce the size of a communication device.

[0009] Fig. 1 is a configuration diagram of a communication device according to an embodiment. Fig. 2 is a circuit configuration diagram of a high-frequency module according to an embodiment. Fig. 3 is a plan view of the high-frequency module according to an embodiment. Fig. 4 is a plan view of the high-frequency module according to an embodiment. Fig. 5 is a cross-sectional view of the high-frequency module according to an embodiment.

[0010] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Note that the embodiments described below are all comprehensive or specific examples. The numerical values, shapes, materials, components, arrangements and connection forms of the components shown in the following embodiments are merely examples and are not intended to limit the present invention.

[0011] It should be noted that the drawings are schematic diagrams in which emphasis, omission, or adjustment of proportions has been appropriately made to illustrate the present invention, and are not necessarily strictly illustrated, and may differ from the actual shapes, positional relationships, and proportions. In the drawings, the same reference numerals are used to denote substantially the same components, and redundant explanations may be omitted or simplified.

[0012] In the following drawings, the x-axis and y-axis are axes that are perpendicular to each other on a plane parallel to the main surface of the substrate, and the z-axis is an axis perpendicular to the main surface of the substrate, with its positive direction indicating the upward direction and its negative direction indicating the downward direction.

[0013] In the following description, "connected" includes not only direct connection by connection terminals and / or wiring conductors, but also electrical connection via other circuit elements. "Connected between A and B" means connected to both A and B between A and B, and arranged in series on the path connecting A and B. "C is connected between A and B" means one end of C is connected to A and the other end of C is connected to B, and C is arranged in series on the path connecting A and B. "Path connecting A and B" means a path made up of conductors electrically connecting A to B.

[0014] The "filter passband" is the portion of the frequency spectrum transmitted by the filter, defined as the frequency band between two frequencies 3 dB above the minimum power insertion loss.

[0015] The term "transmission band" refers to a frequency band used for transmission in a communication device, and the term "reception band" refers to a frequency band used for reception in a communication device. For example, in a frequency division duplex (FDD) band, different frequency bands (uplink band and downlink band) are used as the transmission band and the reception band. For example, in a time division duplex (TDD) band, the same frequency band is used as the transmission band and the reception band.

[0016] "Terminal" means a point where a conductor within an element terminates. Note that terminal is understood to mean any point on the conductor between elements or the entire conductor, not just a single point, provided the impedance of the conductor between elements is sufficiently low.

[0017] The phrase "a component is disposed on a substrate" includes a component being disposed on the main surface of the substrate and a component being disposed within the substrate. The phrase "a component is disposed on the main surface of the substrate" includes a component being disposed in contact with the main surface of the substrate, as well as a component being disposed above the main surface without contacting the main surface (for example, a component being stacked on another component disposed in contact with the main surface). The phrase "a component is disposed on the main surface of the substrate" may also include a component being disposed in a recess formed in the main surface. The phrase "a component is disposed within the substrate" includes a component being encapsulated within the substrate, as well as a component being entirely disposed between the two main surfaces of the substrate but partially not covered by the substrate, and a component being partially disposed within the substrate.

[0018] "A is located between B and C" means that at least one of multiple line segments connecting any point in B and any point in C passes through A. "A is located farther from C than B" means that the distance between A and C is longer than the distance between B and C. Here, "the distance between A (B) and C" means the length of the shortest line segment (i.e., the shortest distance) of multiple line segments connecting any point on the surface of A (B) and any point on the surface of C.

[0019] "Planar view of the module substrate" means that an object is viewed by orthogonally projecting it onto the xy plane in the negative direction of the z axis. "A overlaps with B in the planar view of the module substrate" means that the area of ​​A orthogonally projected onto the xy plane overlaps with the area of ​​B orthogonally projected onto the xy plane.

[0020] "Chip inductor" refers to a surface mount device (SMD) that constitutes an inductor. "Chip capacitor" refers to an SMD that constitutes a capacitor.

[0021] The "winding axis of a chip inductor" refers to the central axis of the winding of the chip inductor. Generally, a chip inductor generates a strong magnetic field along the winding axis.

[0022] Furthermore, terms indicating the relationship between elements, such as "parallel" and "perpendicular," terms indicating the shape of elements, such as "straight line," and numerical ranges do not only represent the strict meaning, but also include a substantially equivalent range, for example, an error of a few percent.

[0023] (Embodiments) The following describes embodiments.

[0024] [1. Configuration of the Communication Device] First, the configuration of the communication device 5 according to this embodiment will be described with reference to Fig. 1. Fig. 1 is a diagram showing the configuration of the communication device 5 according to this embodiment.

[0025] 1 is an exemplary configuration, and communication device 5 may be implemented using any of a wide variety of circuit implementations and circuit technologies, and therefore the description of communication device 5 provided below should not be construed as limiting.

[0026] The communication device 5 can be used to provide wireless connectivity. For example, the communication device 5 can be implemented in a UE in a cellular network (also called a mobile network), such as a mobile phone, a smartphone, a tablet computer, or a wearable device. In another example, the communication device 5 can be implemented to provide wireless connectivity to Internet of Things (IoT) sensor devices, medical / healthcare devices, cars, unmanned aerial vehicles (UAVs) (also called drones), and automated guided vehicles (AGVs). In yet another example, the communication device 5 can be implemented to provide wireless connectivity in a wireless access point or a wireless hotspot.

[0027] The communication device 5 includes a high-frequency module 1, antennas 2a, 2b, and 2c, an RFIC (Radio Frequency Integrated Circuit) 3, and a BBIC (Baseband Integrated Circuit) 4.

[0028] The high-frequency module 1 can transmit high-frequency signals between the antennas 2a to 2c and the RFIC 3. The circuit configuration of the high-frequency module 1 will be described later with reference to FIG.

[0029] The antennas 2a to 2c are connected to the high-frequency module 1. The antennas 2a to 2c can receive high-frequency signals from the high-frequency module 1 and transmit them to the outside of the communication device 5. Furthermore, the antennas 2a to 2c can receive high-frequency signals from the outside of the communication device 5 and supply them to the high-frequency module 1. Note that some or all of the antennas 2a to 2c do not need to be included in the communication device 5. Furthermore, the communication device 5 may include one or more antennas in addition to the antennas 2a to 2c.

[0030] The RFIC 3 is an example of a signal processing circuit that processes high-frequency signals. Specifically, the RFIC 3 can process a transmission signal input from the BBIC 4 by up-conversion or the like, and output the high-frequency transmission signal generated by the signal processing to the high-frequency module 1. Furthermore, the RFIC 3 can process a high-frequency reception signal input via the high-frequency module 1 by down-conversion or the like, and output the reception signal generated by the signal processing to the BBIC 4. The RFIC 3 may also have a control unit that controls switches, amplifiers, and the like included in the high-frequency module 1. Note that part or all of the functions of the RFIC 3 as a control unit may be included outside the RFIC 3, and may be included in, for example, the BBIC 4 or the high-frequency module 1.

[0031] The BBIC 4 is a baseband signal processing circuit that processes signals using a frequency band lower than the high-frequency signals transmitted by the high-frequency module 1. The signals processed by the BBIC 4 include, for example, image signals for image display and / or audio signals for calls via a speaker. The BBIC 4 does not necessarily have to be included in the communication device 5.

[0032] 2. Circuit Configuration of High-Frequency Module 1 Next, the circuit configuration of the high-frequency module 1 according to this embodiment will be described with reference to Fig. 2. Fig. 2 is a circuit configuration diagram of the high-frequency module 1 according to this embodiment.

[0033] 2 is an exemplary circuit configuration, and the high-frequency module 1 can be implemented using any of a wide variety of circuit implementations and circuit technologies. Therefore, the description of the high-frequency module 1 provided below should not be construed as limiting.

[0034] The high-frequency module 1 includes power amplifier circuits 11, 12, 13, and 14, baluns 15, 16, 17, and 18, low-noise amplifier circuits 21, 22, 23, 24, 25, 26, 27, and 28, duplexers 31, 32, 33, 34, 35, 36, 37, and 38, matching circuits 41, 42, 43, and 44, switch circuits 51, 52, 53, 61, 62, 63, and 64, antenna connection terminals 101, 102, and 103, high-frequency input terminals 111, 112, 113, and 114, and high-frequency output terminals 121, 122, 123, 124, 125, 126, and 127.

[0035] Antenna connection terminals 101 to 103 are external connection terminals of the high-frequency module 1. The antenna connection terminals 101 to 103 are connected to antennas 2a to 2c, respectively, outside the high-frequency module 1, and are connected to switch circuits 51 to 53, respectively, inside the high-frequency module 1.

[0036] The radio frequency input terminals 111 to 114 are external connection terminals of the radio frequency module 1 and are terminals for receiving radio frequency signals from the RFIC 3. The radio frequency input terminals 111 to 114 are connected to the RFIC 3 outside the radio frequency module 1 and connected to the power amplifier circuits 11 to 14 inside the radio frequency module 1, respectively.

[0037] The radio frequency output terminals 121 to 128 are external connection terminals of the radio frequency module 1 and are terminals for supplying radio frequency signals to the RFIC 3. The radio frequency output terminals 121 to 128 are connected to the RFIC 3 outside the radio frequency module 1 and are connected to the low noise amplifier circuits 21 to 28 inside the radio frequency module 1, respectively.

[0038] The power amplifier circuit 11 is connected between the radio frequency input terminal 111 and the balun 15. Specifically, the input terminal of the power amplifier circuit 11 is connected to the radio frequency input terminal 111, and the output terminal of the power amplifier circuit 11 is connected to the balun 15. The power amplifier circuit 11 can amplify the TN band A transmission signal and the TN band B transmission signal using power supplied from a power supply (not shown).

[0039] In this embodiment, the power amplifier circuit 11 is a multi-stage amplifier circuit and a differential amplifier circuit, and includes power amplifiers T11, T12, and T13, and a balun B14.

[0040] The power amplifier T11 is a drive stage amplifier and is connected between the radio frequency input terminal 111 and the balun B14. Specifically, the input terminal of the power amplifier T11 is connected to the radio frequency input terminal 111, and the output terminal of the power amplifier T11 is connected to the balun B14.

[0041] The power amplifiers T12 and T13 are power stage amplifiers, and are a pair of power amplifiers connected in parallel. The power amplifiers T12 and T13 are connected between the balun B14 and the balun 15. Specifically, the input terminals of the power amplifiers T12 and T13 are connected to the balun B14, and the output terminals of the power amplifiers T12 and T13 are connected to the balun 15.

[0042] The balun B14 includes a primary coil L141 and a secondary coil L142 that can be coupled to the primary coil L141. One end of the primary coil L141 is connected to the output terminal of the power amplifier T11, and the other end of the primary coil L141 is connected to ground. One end of the secondary coil L142 is connected to the input terminal of the power amplifier T12, and the other end of the secondary coil L142 is connected to the input terminal of the power amplifier T13. The balun B14 converts the single-ended signal amplified by the power amplifier T11 into a differential signal and supplies the differential signal to the two power amplifiers T12 and T13, respectively.

[0043] The circuit configuration of the power amplifier circuit 11 is not limited to the configuration shown in FIG. 2 . For example, the power amplifier circuit 11 may not be a multi-stage amplifier circuit but may be a single-stage amplifier circuit. In this case, the power amplifier circuit 11 may not include the power amplifier T11. Furthermore, for example, the power amplifier circuit 11 may not be a differential amplifier circuit but may be a Doherty amplifier circuit. Furthermore, for example, in the power amplifier circuit 11, the phase difference between the two high-frequency signals amplified by the power amplifiers T12 and T13 may not be 180 degrees but may be 90 degrees. In this case, each of the baluns B14 and B15 may be replaced with a quadrature hybrid coupler. Furthermore, for example, the power amplifier circuit 11 may directly amplify and output a single-ended signal. In this case, the power amplifier circuit 11 may not include the power amplifier T13 and the balun B14, and the high-frequency module 1 may not include the balun 15.

[0044] The power amplifier circuit 12 is connected between the radio frequency input terminal 112 and the balun 16. Specifically, the input terminal of the power amplifier circuit 12 is connected to the radio frequency input terminal 112, and the output terminal of the power amplifier circuit 12 is connected to the balun 16. The power amplifier circuit 12 can amplify the TN band C transmission signal and the TN band D transmission signal using power supplied from a power supply (not shown).

[0045] In this embodiment, the power amplifier circuit 12 is a multi-stage amplifier circuit and a differential amplifier circuit, and includes power amplifiers T21, T22, and T23, and a balun B24.

[0046] The power amplifier T21 is a drive stage amplifier and is connected between the radio frequency input terminal 112 and the balun B24. Specifically, the input terminal of the power amplifier T21 is connected to the radio frequency input terminal 112, and the output terminal of the power amplifier T21 is connected to the balun B24.

[0047] The power amplifiers T22 and T23 are power stage amplifiers, and are a pair of power amplifiers connected in parallel. The power amplifiers T22 and T23 are connected between the balun B24 and the balun 16. Specifically, the input terminals of the power amplifiers T22 and T23 are connected to the balun B24, and the output terminals of the power amplifiers T22 and T23 are connected to the balun 16.

[0048] The balun B24 includes a primary coil L241 and a secondary coil L242 that can be coupled to the primary coil L241. One end of the primary coil L241 is connected to the output terminal of the power amplifier T21, and the other end of the primary coil L241 is connected to ground. One end of the secondary coil L242 is connected to the input terminal of the power amplifier T22, and the other end of the secondary coil L242 is connected to the input terminal of the power amplifier T23. The balun B24 converts the single-ended signal amplified by the power amplifier T21 into a differential signal and supplies the differential signal to the two power amplifiers T22 and T23, respectively.

[0049] The circuit configuration of the power amplifier circuit 12 is not limited to the configuration shown in FIG. 2 . For example, the power amplifier circuit 12 may not be a multi-stage amplifier circuit but may be a single-stage amplifier circuit. In this case, the power amplifier circuit 12 may not include the power amplifier T21. Furthermore, for example, the power amplifier circuit 12 may not be a differential amplifier circuit but may be a Doherty amplifier circuit. Furthermore, for example, in the power amplifier circuit 12, the phase difference between the two high-frequency signals amplified by the power amplifiers T22 and T23 may not be 180 degrees but may be 90 degrees. In this case, each of the baluns B24 and B16 may be replaced with a quadrature hybrid coupler. Furthermore, for example, the power amplifier circuit 12 may directly amplify and output a single-ended signal. In this case, the power amplifier circuit 12 may not include the power amplifier T23 and the balun B24, and the high-frequency module 1 may not include the balun 16.

[0050] The power amplifier circuit 13 is connected between the radio frequency input terminal 113 and the balun 17. Specifically, the input terminal of the power amplifier circuit 13 is connected to the radio frequency input terminal 113, and the output terminal of the power amplifier circuit 13 is connected to the balun 17. The power amplifier circuit 13 can amplify the transmission signals of NTN band E and NTN band F using power supplied from a power supply (not shown).

[0051] In this embodiment, the power amplifier circuit 13 is a multi-stage amplifier circuit and a differential amplifier circuit, and includes power amplifiers T31, T32, and T33, and a balun B34.

[0052] The power amplifier T31 is a drive stage amplifier and is connected between the radio frequency input terminal 113 and the balun B34. Specifically, the input terminal of the power amplifier T31 is connected to the radio frequency input terminal 113, and the output terminal of the power amplifier T31 is connected to the balun B34.

[0053] The power amplifiers T32 and T33 are power stage amplifiers, and are a pair of power amplifiers connected in parallel. The power amplifiers T32 and T33 are connected between the balun B34 and the balun 17. Specifically, the input terminals of the power amplifiers T32 and T33 are connected to the balun B34, and the output terminals of the power amplifiers T32 and T33 are connected to the balun 17.

[0054] The balun B34 includes a primary coil L341 and a secondary coil L342 that can be coupled to the primary coil L341. One end of the primary coil L341 is connected to the output terminal of the power amplifier T31, and the other end of the primary coil L341 is connected to ground. One end of the secondary coil L342 is connected to the input terminal of the power amplifier T32, and the other end of the secondary coil L342 is connected to the input terminal of the power amplifier T33. The balun B34 converts the single-ended signal amplified by the power amplifier T31 into a differential signal and supplies the differential signal to the two power amplifiers T32 and T33, respectively.

[0055] The circuit configuration of the power amplifier circuit 13 is not limited to the configuration shown in FIG. 2 . For example, the power amplifier circuit 13 may not be a multi-stage amplifier circuit but may be a single-stage amplifier circuit. In this case, the power amplifier circuit 13 may not include the power amplifier T31. Furthermore, for example, the power amplifier circuit 13 may not be a differential amplifier circuit but may be a Doherty amplifier circuit. Furthermore, for example, in the power amplifier circuit 13, the phase difference between the two high-frequency signals amplified by the power amplifiers T32 and T33 may not be 180 degrees but may be 90 degrees. In this case, each of the baluns B34 and B17 may be replaced with a quadrature hybrid coupler. Furthermore, for example, the power amplifier circuit 13 may directly amplify and output a single-ended signal. In this case, the power amplifier circuit 13 may not include the power amplifier T33 and the balun B34, and the high-frequency module 1 may not include the balun 17.

[0056] The power amplifier circuit 14 is connected between the radio frequency input terminal 114 and the balun 18. Specifically, the input terminal of the power amplifier circuit 14 is connected to the radio frequency input terminal 114, and the output terminal of the power amplifier circuit 14 is connected to the balun 18. The power amplifier circuit 14 can amplify a TN band G transmission signal (G-Tx) and a TN band H transmission signal (H-Tx) using power supplied from a power supply (not shown). Note that the power amplifier circuit 14 does not necessarily have to be included in the radio frequency module 1.

[0057] In this embodiment, the power amplifier circuit 14 is a multi-stage amplifier circuit and a differential amplifier circuit, and includes power amplifiers T41, T42, and T43, and a balun B44.

[0058] The power amplifier T41 is a drive stage amplifier and is connected between the radio frequency input terminal 114 and the balun B44. Specifically, the input terminal of the power amplifier T41 is connected to the radio frequency input terminal 114, and the output terminal of the power amplifier T41 is connected to the balun B44.

[0059] The power amplifiers T42 and T43 are power stage amplifiers, and are a pair of power amplifiers connected in parallel. The power amplifiers T42 and T43 are connected between the balun B44 and the balun 18. Specifically, the input terminals of the power amplifiers T42 and T43 are connected to the balun B44, and the output terminals of the power amplifiers T42 and T43 are connected to the balun 18.

[0060] The balun B44 includes a primary coil L441 and a secondary coil L442 that can be coupled to the primary coil L441. One end of the primary coil L441 is connected to the output terminal of the power amplifier T41, and the other end of the primary coil L441 is connected to ground. One end of the secondary coil L442 is connected to the input terminal of the power amplifier T42, and the other end of the secondary coil L442 is connected to the input terminal of the power amplifier T43. The balun B44 converts the single-ended signal amplified by the power amplifier T41 into a differential signal and supplies the differential signal to the two power amplifiers T42 and T43, respectively.

[0061] The circuit configuration of the power amplifier circuit 14 is not limited to the configuration shown in FIG. 2 . For example, the power amplifier circuit 14 may not be a multi-stage amplifier circuit but may be a single-stage amplifier circuit. In this case, the power amplifier circuit 14 may not include the power amplifier T41. Furthermore, for example, the power amplifier circuit 14 may not be a differential amplifier circuit but may be a Doherty amplifier circuit. For example, in the power amplifier circuit 14, the phase difference between the two high-frequency signals amplified by the power amplifiers T42 and T43 may not be 180 degrees but may be 90 degrees. In this case, each of the baluns B44 and B18 may be replaced with a quadrature hybrid coupler. For example, the power amplifier circuit 14 may directly amplify and output a single-ended signal. In this case, the power amplifier circuit 14 may not include the power amplifier T43 and the balun B44, and the high-frequency module 1 may not include the balun 18.

[0062] The balun 15 includes a primary coil 151 and a secondary coil 152 that can be coupled to the primary coil 151. One end of the primary coil 151 is connected to the output terminal of the power amplifier T12, and the other end of the primary coil 151 is connected to the output terminal of the power amplifier T13. One end of the secondary coil 152 is connected to the matching circuit 41, and the other end of the secondary coil 152 is connected to ground. The balun 15 can convert the differential signal amplified by the power amplifier circuit 11 into a single-ended signal. Note that if the power amplifier circuit 11 outputs a single-ended signal, the balun 15 does not need to be included in the high-frequency module 1.

[0063] The balun 16 includes a primary coil 161 and a secondary coil 162 that can be coupled to the primary coil 161. One end of the primary coil 161 is connected to the output terminal of the power amplifier T22, and the other end of the primary coil 161 is connected to the output terminal of the power amplifier T23. One end of the secondary coil 162 is connected to the matching circuit 42, and the other end of the secondary coil 162 is connected to ground. The balun 16 can convert the differential signal amplified by the power amplifier circuit 12 into a single-ended signal. Note that if the power amplifier circuit 12 outputs a single-ended signal, the balun 16 does not need to be included in the high-frequency module 1.

[0064] The balun 17 includes a primary coil 171 and a secondary coil 172 that can be coupled to the primary coil 171. One end of the primary coil 171 is connected to the output terminal of the power amplifier T32, and the other end of the primary coil 171 is connected to the output terminal of the power amplifier T33. One end of the secondary coil 172 is connected to the matching circuit 43, and the other end of the secondary coil 172 is connected to ground. The balun 17 can convert the differential signal amplified by the power amplifier circuit 13 into a single-ended signal. Note that if the power amplifier circuit 13 outputs a single-ended signal, the balun 17 does not need to be included in the high-frequency module 1.

[0065] The balun 18 includes a primary coil 181 and a secondary coil 182 that can be coupled to the primary coil 181. One end of the primary coil 181 is connected to the output terminal of the power amplifier T42, and the other end of the primary coil 181 is connected to the output terminal of the power amplifier T43. One end of the secondary coil 182 is connected to the matching circuit 44, and the other end of the secondary coil 182 is connected to ground. The balun 18 can convert the differential signal amplified by the power amplifier circuit 14 into a single-ended signal. Note that if the power amplifier circuit 14 outputs a single-ended signal, the balun 18 does not need to be included in the high-frequency module 1.

[0066] The low-noise amplifier circuit 21 is connected between the duplexer 31 and the high-frequency output terminal 121. Specifically, the input terminal of the low-noise amplifier circuit 21 is connected to the duplexer 31, and the output terminal of the low-noise amplifier circuit 21 is connected to the high-frequency output terminal 121. The low-noise amplifier circuit 21 can amplify the received signal of TN band A using power supplied from a power supply (not shown).

[0067] The low-noise amplifier circuit 22 is connected between the duplexer 32 and the high-frequency output terminal 122. Specifically, the input terminal of the low-noise amplifier circuit 22 is connected to the duplexer 32, and the output terminal of the low-noise amplifier circuit 22 is connected to the high-frequency output terminal 122. The low-noise amplifier circuit 22 can amplify the received signal of TN band B using power supplied from a power supply (not shown).

[0068] The low-noise amplifier circuit 23 is connected between the duplexer 33 and the high-frequency output terminal 123. Specifically, the input terminal of the low-noise amplifier circuit 23 is connected to the duplexer 33, and the output terminal of the low-noise amplifier circuit 23 is connected to the high-frequency output terminal 123. The low-noise amplifier circuit 23 can amplify the received signal of TN band C using power supplied from a power supply (not shown).

[0069] The low-noise amplifier circuit 24 is connected between the duplexer 34 and the high-frequency output terminal 124. Specifically, the input terminal of the low-noise amplifier circuit 24 is connected to the duplexer 34, and the output terminal of the low-noise amplifier circuit 24 is connected to the high-frequency output terminal 124. The low-noise amplifier circuit 24 can amplify the received signal of TN band D using power supplied from a power supply (not shown).

[0070] The low-noise amplifier circuit 25 is an example of a first low-noise amplifier circuit, and is connected between the duplexer 35 and the high-frequency output terminal 125. Specifically, the input terminal of the low-noise amplifier circuit 25 is connected to the duplexer 35, and the output terminal of the low-noise amplifier circuit 25 is connected to the high-frequency output terminal 125. The low-noise amplifier circuit 25 can amplify the received signal of NTN band E using power supplied from a power supply (not shown).

[0071] The low-noise amplifier circuit 26 is connected between the duplexer 36 and the high-frequency output terminal 126. Specifically, the input terminal of the low-noise amplifier circuit 26 is connected to the duplexer 36, and the output terminal of the low-noise amplifier circuit 26 is connected to the high-frequency output terminal 126. The low-noise amplifier circuit 26 can amplify the received signal of NTN band F using power supplied from a power supply (not shown).

[0072] The low-noise amplifier circuit 27 is an example of a second low-noise amplifier circuit, and is connected between the duplexer 37 and the high-frequency output terminal 127. Specifically, the input terminal of the low-noise amplifier circuit 27 is connected to the duplexer 37, and the output terminal of the low-noise amplifier circuit 27 is connected to the high-frequency output terminal 127. The low-noise amplifier circuit 27 can amplify the TN band G reception signal (G-Rx) using power supplied from a power supply (not shown).

[0073] The low-noise amplifier circuit 28 is connected between the duplexer 38 and the high-frequency output terminal 128. Specifically, the input terminal of the low-noise amplifier circuit 28 is connected to the duplexer 38, and the output terminal of the low-noise amplifier circuit 28 is connected to the high-frequency output terminal 128. The low-noise amplifier circuit 28 can amplify the TN band H reception signal (H-Rx) using power supplied from a power supply (not shown).

[0074] In this embodiment, the low-noise amplifier circuits 21 to 28 are included in the integrated circuit 20. Note that some or all of the low-noise amplifier circuits 21 to 28 do not have to be included in the integrated circuit 20, and furthermore, they do not have to be included in the high-frequency module 1.

[0075] The duplexer 31 is connected between the antenna connection terminal 101 and the power amplifier circuit 11 and the low-noise amplifier circuit 21. The duplexer 31 includes filters 311 and 312, and can separate the TN band A transmission signal and the reception signal.

[0076] The filter 311 is a bandpass filter having a passband that includes the transmission band (A-Tx) of TN band A. The filter 311 can pass signals within the transmission band of TN band A and can attenuate signals outside the transmission band of TN band A. One end of the filter 311 is connected to a selection terminal 511 of the switch circuit 51, and the other end of the filter 311 is connected to a selection terminal 611 of the switch circuit 61.

[0077] The filter 312 is a bandpass filter having a passband that includes the receive band (A-Rx) of TN band A. The filter 312 can pass signals within the receive band of TN band A and can attenuate signals outside the receive band of TN band A. One end of the filter 312 is connected to the selection terminal 511 of the switch circuit 51, and the other end of the filter 312 is connected to the low-noise amplifier circuit 21. The filter 312 does not necessarily have to be included in the high-frequency module 1.

[0078] The duplexer 32 is connected between the antenna connection terminal 101 and the power amplifier circuit 11 and the low-noise amplifier circuit 22. The duplexer 32 includes filters 321 and 322, and can separate the transmission signal and the reception signal of TN band B. Note that the duplexer 32 does not necessarily have to be included in the high-frequency module 1.

[0079] The filter 321 is a bandpass filter having a passband that includes the transmission band (B-Tx) of TN band B. The filter 321 can pass signals within the transmission band of TN band B and can attenuate signals outside the transmission band of TN band B. One end of the filter 321 is connected to the selection terminal 512 of the switch circuit 51, and the other end of the filter 321 is connected to the selection terminal 612 of the switch circuit 61. The filter 321 does not necessarily have to be included in the high-frequency module 1.

[0080] The filter 322 is a bandpass filter having a passband that includes the receive band (B-Rx) of TN band B. The filter 322 can pass signals within the receive band of TN band B and can attenuate signals outside the receive band of TN band B. One end of the filter 322 is connected to the selection terminal 512 of the switch circuit 51, and the other end of the filter 322 is connected to the low-noise amplifier circuit 22. The filter 322 does not necessarily have to be included in the high-frequency module 1.

[0081] The duplexer 33 is connected between the antenna connection terminal 102 and the power amplifier circuit 12 and the low-noise amplifier circuit 23. The duplexer 33 includes filters 331 and 332, and can separate the TN band C transmission signal and reception signal.

[0082] The filter 331 is a bandpass filter having a passband that includes the transmission band (C-Tx) of TN band C. The filter 331 can pass signals within the transmission band of TN band C and can attenuate signals outside the transmission band of TN band C. One end of the filter 331 is connected to the selection terminal 521 of the switch circuit 52, and the other end of the filter 331 is connected to the selection terminal 621 of the switch circuit 62.

[0083] The filter 332 is a bandpass filter having a passband that includes the receive band (C-Rx) of TN band C. The filter 332 can pass signals within the receive band of TN band C and can attenuate signals outside the receive band of TN band C. One end of the filter 332 is connected to the selection terminal 521 of the switch circuit 52, and the other end of the filter 332 is connected to the low-noise amplifier circuit 23. The filter 332 does not necessarily have to be included in the high-frequency module 1.

[0084] The duplexer 34 is connected between the antenna connection terminal 102 and the power amplifier circuit 12 and the low-noise amplifier circuit 24. The duplexer 34 includes filters 341 and 342, and can separate the transmission signal and the reception signal of TN band D. Note that the duplexer 34 does not necessarily have to be included in the high-frequency module 1.

[0085] The filter 341 is a bandpass filter having a passband that includes the transmission band (D-Tx) of TN band D. The filter 341 can pass signals within the transmission band of TN band D and can attenuate signals outside the transmission band of TN band D. One end of the filter 341 is connected to the selection terminal 522 of the switch circuit 52, and the other end of the filter 341 is connected to the selection terminal 622 of the switch circuit 62. The filter 341 does not necessarily have to be included in the high-frequency module 1.

[0086] The filter 342 is a bandpass filter having a passband that includes the receive band (D-Rx) of TN band D. The filter 342 can pass signals within the receive band of TN band D and can attenuate signals outside the receive band of TN band D. One end of the filter 342 is connected to the selection terminal 522 of the switch circuit 52, and the other end of the filter 342 is connected to the low-noise amplifier circuit 24. The filter 342 does not necessarily have to be included in the high-frequency module 1.

[0087] The duplexer 35 is connected between the antenna connection terminal 102 and the power amplifier circuit 13 and the low-noise amplifier circuit 25. The duplexer 35 includes filters 351 and 352, and can separate the NTN band E transmission signal and reception signal.

[0088] The filter 351 is an example of a first filter, and is a bandpass filter having a passband that includes the transmission band (E-Tx) of NTN band E. The filter 351 can pass signals within the transmission band of NTN band E and can attenuate signals outside the transmission band of NTN band E. One end of the filter 351 is connected to the selection terminal 523 of the switch circuit 52, and the other end of the filter 351 is connected to the selection terminal 631 of the switch circuit 63.

[0089] The filter 352 is an example of a second filter, and is a bandpass filter having a passband that includes the reception band (E-Rx) of NTN band E. The filter 352 can pass signals within the reception band of NTN band E and can attenuate signals outside the reception band of NTN band E. One end of the filter 352 is connected to the selection terminal 523 of the switch circuit 52, and the other end of the filter 352 is connected to the low-noise amplifier circuit 25. The filter 352 does not have to be included in the high-frequency module 1.

[0090] The duplexer 36 is connected between the antenna connection terminal 102 and the power amplifier circuit 13 and the low-noise amplifier circuit 26. The duplexer 36 includes filters 361 and 362, and can separate the transmission signal and the reception signal of NTN band F. Note that the duplexer 36 does not necessarily have to be included in the high-frequency module 1.

[0091] The filter 361 is a bandpass filter having a passband that includes the transmission band (F-Tx) of NTN band F. The filter 361 can pass signals within the transmission band of NTN band F and can attenuate signals outside the transmission band of NTN band F. One end of the filter 361 is connected to the selection terminal 524 of the switch circuit 52, and the other end of the filter 361 is connected to the selection terminal 632 of the switch circuit 63. The filter 361 does not necessarily have to be included in the high-frequency module 1.

[0092] The filter 362 is a bandpass filter having a passband that includes the reception band (F-Rx) of NTN band F. The filter 362 can pass signals within the reception band of NTN band F and can attenuate signals outside the reception band of NTN band F. One end of the filter 362 is connected to the selection terminal 524 of the switch circuit 52, and the other end of the filter 362 is connected to the low-noise amplifier circuit 26. The filter 362 does not necessarily have to be included in the high-frequency module 1.

[0093] The duplexer 37 is connected between the antenna connection terminal 103 and the power amplifier circuit 14 and the low-noise amplifier circuit 27. The duplexer 37 includes filters 371 and 372, and can separate the transmission signal and the reception signal of TN band G. Note that the duplexer 37 does not necessarily have to be included in the high-frequency module 1.

[0094] The filter 371 is a bandpass filter having a passband that includes the transmission band of TN band G. The filter 371 can pass signals within the transmission band of TN band G and can attenuate signals outside the transmission band of TN band G. One end of the filter 371 is connected to the selection terminal 531 of the switch circuit 53, and the other end of the filter 371 is connected to the selection terminal 641 of the switch circuit 64. The filter 371 does not necessarily have to be included in the high-frequency module 1.

[0095] The filter 372 is an example of a third filter, and is a bandpass filter having a passband that includes the reception band of TN band G. The filter 372 can pass signals within the reception band of TN band G and can attenuate signals outside the reception band of TN band G. One end of the filter 372 is connected to the selection terminal 531 of the switch circuit 53, and the other end of the filter 372 is connected to the low-noise amplifier circuit 27. The filter 372 does not necessarily have to be included in the high-frequency module 1.

[0096] The duplexer 38 is connected between the antenna connection terminal 103 and the power amplifier circuit 14 and the low-noise amplifier circuit 28. The duplexer 38 includes filters 381 and 382, ​​and can separate the transmission signal and the reception signal of TN band H. Note that the duplexer 38 does not necessarily have to be included in the high-frequency module 1.

[0097] The filter 381 is a bandpass filter having a passband that includes the transmission band of TN band H. The filter 381 can pass signals within the transmission band of TN band H and can attenuate signals outside the transmission band of TN band H. One end of the filter 381 is connected to the selection terminal 532 of the switch circuit 53, and the other end of the filter 381 is connected to the selection terminal 642 of the switch circuit 64. The filter 381 does not necessarily have to be included in the high-frequency module 1.

[0098] The filter 382 is a bandpass filter having a passband that includes the reception band of TN band H. The filter 382 can pass signals within the reception band of TN band H and can attenuate signals outside the reception band of TN band H. One end of the filter 382 is connected to the selection terminal 532 of the switch circuit 53, and the other end of the filter 382 is connected to the low-noise amplifier circuit 28. The filter 382 does not necessarily have to be included in the high-frequency module 1.

[0099] The matching circuit (matching network) 41 is connected between the power amplifier circuit 11 and the filters 311 and 321. Specifically, one end of the matching circuit 41 is connected to the power amplifier circuit 11 via the balun 15, and the other end of the matching circuit 41 is connected to the filters 311 and 321 via the switch circuit 61. The matching circuit 41 includes an inductor and may also include a capacitor. The matching circuit 41 can achieve impedance matching between the power amplifier circuit 11 and the filters 311 and 321.

[0100] The matching circuit (matching network) 42 is connected between the power amplifier circuit 12 and the filters 331 and 341. Specifically, one end of the matching circuit 42 is connected to the power amplifier circuit 12 via the balun 16, and the other end of the matching circuit 42 is connected to the filters 331 and 341 via the switch circuit 62. The matching circuit 42 includes an inductor and may also include a capacitor. The matching circuit 42 can achieve impedance matching between the power amplifier circuit 12 and the filters 331 and 341.

[0101] The matching circuit (matching network) 43 is connected between the power amplifier circuit 13 and the filters 351 and 361. Specifically, one end of the matching circuit 43 is connected to the power amplifier circuit 13 via the balun 17, and the other end of the matching circuit 43 is connected to the filters 351 and 361 via the switch circuit 63. The matching circuit 43 may include an inductor and / or a capacitor. The matching circuit 43 can achieve impedance matching between the power amplifier circuit 13 and the filters 351 and 361.

[0102] The matching circuit (matching network) 44 is connected between the power amplifier circuit 14 and the filters 371 and 381. Specifically, one end of the matching circuit 44 is connected to the power amplifier circuit 14 via the balun 18, and the other end of the matching circuit 44 is connected to the filters 371 and 381 via the switch circuit 64. The matching circuit 44 includes an inductor and may also include a capacitor. The matching circuit 44 can achieve impedance matching between the power amplifier circuit 14 and the filters 371 and 381. Note that the matching circuit 44 does not necessarily have to be included in the high-frequency module 1.

[0103] The switch circuit 51 is connected between the antenna connection terminal 101 and the duplexers 31 and 32. The switch circuit 51 includes a common terminal 510 and selection terminals 511 and 512. The common terminal 510 is connected to the antenna connection terminal 101. The selection terminal 511 is connected to the duplexer 31. The selection terminal 512 is connected to the duplexer 32. In this connection configuration, the switch circuit 51 can selectively connect the common terminal 510 to the selection terminals 511 and 512 based on, for example, a control signal from the RFIC 3. The switch circuit 51 is configured, for example, as an SPDT (Single-Pole Double-Throw) type switch circuit.

[0104] The switch circuit 52 is connected between the antenna connection terminal 102 and the duplexers 33 to 36. The switch circuit 52 includes a common terminal 520 and selection terminals 521, 522, 523, and 524. The common terminal 520 is connected to the antenna connection terminal 102. The selection terminal 521 is connected to the duplexer 33. The selection terminal 522 is connected to the duplexer 34. The selection terminal 523 is connected to the duplexer 35. The selection terminal 524 is connected to the duplexer 36. In this connection configuration, the switch circuit 52 can selectively connect the common terminal 520 to the selection terminals 521 to 524 based on, for example, a control signal from the RFIC 3. The switch circuit 52 is configured, for example, as an SP4T (Single-Pole Quadruple-Throw) type switch circuit.

[0105] The switch circuit 53 is connected between the antenna connection terminal 103 and the duplexers 37 and 38. The switch circuit 53 includes a common terminal 530 and selection terminals 531 and 532. The common terminal 530 is connected to the antenna connection terminal 103. The selection terminal 531 is connected to the duplexer 37. The selection terminal 532 is connected to the duplexer 38. In this connection configuration, the switch circuit 53 can selectively connect the common terminal 530 to the selection terminals 531 and 532 based on, for example, a control signal from the RFIC 3. The switch circuit 53 is configured, for example, as an SPDT type switch circuit.

[0106] In this embodiment, the switch circuits 51 to 53 are included in the integrated circuit 50. Note that some or all of the switch circuits 51 to 53 do not have to be included in the integrated circuit 50, and furthermore, they do not have to be included in the high-frequency module 1.

[0107] The switch circuit 61 is connected between the power amplifier circuit 11 and the filters 311 and 321. The switch circuit 61 includes a common terminal 610 and selection terminals 611 and 612. The common terminal 610 is connected to the power amplifier circuit 11 via the matching circuit 41 and the balun 15. The selection terminal 611 is connected to the filter 311. The selection terminal 612 is connected to the filter 321. In this connection configuration, the switch circuit 61 can selectively connect the common terminal 610 to the selection terminals 611 and 612 based on, for example, a control signal from the RFIC 3. The switch circuit 61 is configured as, for example, an SPDT type switch circuit.

[0108] The switch circuit 62 is connected between the power amplifier circuit 12 and the filters 331 and 341. The switch circuit 62 includes a common terminal 620 and selection terminals 621 and 622. The common terminal 620 is connected to the power amplifier circuit 12 via the matching circuit 42 and the balun 16. The selection terminal 621 is connected to the filter 331. The selection terminal 622 is connected to the filter 341. In this connection configuration, the switch circuit 62 can selectively connect the common terminal 620 to the selection terminals 621 and 622 based on, for example, a control signal from the RFIC 3. The switch circuit 62 is configured as, for example, an SPDT type switch circuit.

[0109] The switch circuit 63 is connected between the power amplifier circuit 13 and the filters 351 and 361. The switch circuit 63 includes a common terminal 630 and selection terminals 631 and 632. The common terminal 630 is connected to the power amplifier circuit 13 via the matching circuit 43 and the balun 17. The selection terminal 631 is connected to the filter 351. The selection terminal 632 is connected to the filter 361. In this connection configuration, the switch circuit 63 can selectively connect the common terminal 630 to the selection terminals 631 and 632 based on, for example, a control signal from the RFIC 3. The switch circuit 63 is configured, for example, as an SPDT type switch circuit.

[0110] The switch circuit 64 is connected between the power amplifier circuit 14 and the filters 371 and 381. The switch circuit 64 includes a common terminal 640 and selection terminals 641 and 642. The common terminal 640 is connected to the power amplifier circuit 14 via the matching circuit 44 and the balun 18. The selection terminal 641 is connected to the filter 371. The selection terminal 642 is connected to the filter 381. In this connection configuration, the switch circuit 64 can selectively connect the common terminal 640 to the selection terminals 641 and 642 based on, for example, a control signal from the RFIC 3. The switch circuit 64 is configured as, for example, an SPDT type switch circuit.

[0111] In this embodiment, the switch circuits 61 to 64 are included in the integrated circuit 60. Note that some or all of the switch circuits 61 to 64 do not have to be included in the integrated circuit 60, and furthermore, they do not have to be included in the high-frequency module 1.

[0112] [3. Frequency Bands] Next, frequency bands according to this embodiment will be described. TN bands A to D, G, and H and NTN bands E and F are frequency bands for communication systems constructed using radio access technology (RAT). TN bands A to D, G, and H and NTN bands E and F are predefined by standardization organizations (e.g., 3GPP and the Institute of Electrical and Electronics Engineers (IEEE)). Examples of communication systems include 5GNR (5th Generation New Radio) systems, LTE (Long Term Evolution) systems, and WLAN (Wireless Local Area Network) systems.

[0113] Each of TN bands A and B is a frequency band used in TN and is a frequency band included in the low band group (LB). TN bands A and B are different frequency bands from each other. The low band group is a band group including multiple frequency bands for LTE and / or 5G NR, and is defined in the frequency range of 617 to 960 MHz. TN bands A and B can be, for example, any two of Band 5, Band 8, Band 26, and Band 28 for LTE, and n5, n8, n26, and n28 for 5G NR, but are not limited to these.

[0114] Each of TN bands C and D is a frequency band used in TN and is a frequency band included in the mid-band group (MB). TN bands C and D are different frequency bands from each other. The mid-band group is a band group including multiple frequency bands for LTE and / or 5G NR, and is defined in the frequency range of 1427 to 2200 MHz. TN bands C and D can be, for example, any two of Band 1, Band 3, Band 25, and Band 66 for LTE, and n1, n3, n25, and n66 for 5G NR, but TN bands C and D are not limited to these.

[0115] Each of NTN bands E and F is a frequency band used in NTN. NTN bands E and F are different frequency bands. Although n256 and n255 for 5G NR can be used as NTN bands E and F, NTN bands E and F are not limited to these. Note that the NTN band is a frequency band that cannot be used simultaneously with the TN band. In other words, the NTN band and the TN band are used exclusively. Note that simultaneous use of multiple TN bands may be possible, and simultaneous use of multiple NTN bands may also be possible.

[0116] Each of TN bands G and H is a frequency band used in TN and is a frequency band included in the high band group (HB). TN bands G and H are different frequency bands from each other. The high band group is a band group including multiple frequency bands for LTE and / or 5G NR, and is defined in the frequency range of 2300 to 2690 MHz. TN bands G and H can be, for example, any two of Band 7 and Band 30 for LTE, and n7 and n30 for 5G NR, but are not limited to these.

[0117] In this embodiment, TN bands A to D, G, and H and NTN bands E and F are FDD bands, but are not limited to this. For example, TN bands G and / or H may be TDD bands. In this case, duplexers 37 and / or 38 may be replaced with filters used for transmission and reception and a switch circuit that switches between transmission and reception.

[0118] [4. Mounting Example of High-Frequency Module 1] Next, a mounting example of the high-frequency module 1 having the circuit configuration described above will be described with reference to FIGS. 3, 4, and 5. FIG. 3 is a plan view of the high-frequency module 1 according to this embodiment. FIG. 4 is a plan view of the high-frequency module 1 according to this embodiment, seen from the positive side of the z-axis toward the main surface 90b of the module substrate 90. FIG. 5 is a cross-sectional view of the high-frequency module 1 according to this embodiment. The cross-section of the high-frequency module 1 in FIG. 5 is taken along line v-v in FIGS. 3 and 4. Note that in FIGS. 3 to 5, some components are labeled with letters to facilitate understanding of the relative positions of the components. However, the actual components may not be labeled with these letters. Furthermore, hatched components in FIGS. 3 and 4 represent optional components that are not essential to this embodiment.

[0119] 3 illustrates an exemplary implementation of the high frequency module 1, and the high frequency module 1 may be implemented using any of a wide variety of circuit implementations and circuit technologies. Therefore, the description of the high frequency module 1 provided below should not be construed as limiting.

[0120] The high-frequency module 1 includes a module substrate 90 and metal walls 911, 913, 914, and 915 in addition to the multiple circuit components shown in FIG.

[0121] The module substrate 90 has opposing main surfaces 90a and 90b. The main surface 90a is an example of a first main surface and may also be called a front surface or an upper surface. The main surface 90b is an example of a second main surface and may also be called a back surface or a lower surface. Wiring (not shown), via conductors (not shown), and the like are formed within the module substrate 90 and on the main surface 90a.

[0122] The module substrate 90 may be, for example, a low temperature co-fired ceramics (LTCC) substrate or a high temperature co-fired ceramics (HTCC) substrate having a laminated structure of multiple dielectric layers, a component-embedded substrate, a substrate having a redistribution layer (RDL), or a printed circuit board, but is not limited to these.

[0123] Each of the power amplifier circuits 11 (LB PA), 12 (MB PA), 13 (NTN PA), and 14 (HB PA) is mounted as a semiconductor integrated circuit on the main surface 90a of the module substrate 90. The semiconductor material of the integrated circuit may be, for example, silicon germanium (SiGe) or gallium arsenide (GaAs). In this case, some or all of the power amplifiers included in the power amplifier circuits 11 to 14 may be configured with heterojunction bipolar transistors (HBTs). Gallium nitride (GaN) or silicon carbide (SiC) may also be used as the semiconductor material of the integrated circuit. In this case, some or all of the power amplifiers included in the power amplifier circuits 11 to 14 may be configured with high electron mobility transistors (HEMTs) or metal-semiconductor field effect transistors (MESFETs). Single crystal silicon (Si) may also be used as the semiconductor material. In this case, some or all of the multiple power amplifiers included in the power amplifier circuits 11 to 14 may be configured with a CMOS (Complementary Metal Oxide Semiconductor) or may be manufactured using an SOI (Silicon on Insulator) process. Each of the power amplifier circuits 11 to 14 may be divided and implemented on multiple semiconductor integrated circuits. Furthermore, any combination of the power amplifier circuits 11 to 14 may be integrated into a single semiconductor integrated circuit.

[0124] Each of the baluns 15, 16, and 18 is formed by pattern wiring on the main surface 90a of the module substrate 90 and / or within the module substrate 90. The balun 17 is formed by wiring arranged on the main surface 90b of the module substrate 90 and / or within the module substrate 90. Some or all of the baluns 15 to 18 may be implemented as SMDs.

[0125] The matching circuits 41 to 44 are mounted on the main surface 90a of the module substrate 90 using chip inductors 411 to 441 (L). The matching circuits 41 to 44 may further include chip capacitors. Note that the matching circuit 43 does not necessarily have to include the chip inductor 431.

[0126] In this embodiment, winding axis 411A of chip inductor 411 is parallel to the y-axis. Meanwhile, winding axes 421A and 441A of chip inductors 421 and 441 are parallel to the x-axis. That is, in a plan view of module substrate 90, winding axis 411A is perpendicular to winding axes 421A and 441A.

[0127] Note that some or all of winding axes 421A and 441A do not have to be perpendicular to winding axis 411A. That is, in a plan view of module substrate 90, the angle formed by winding axes 411A and 421A is not limited to 90 degrees, and the angle formed by winding axes 411A and 441A is not limited to 90 degrees. These angles need only be non-0 degrees and may be in the range of, for example, 10 to 90 degrees. That is, in a plan view of module substrate 90, each of winding axes 421A and 441A need only be non-parallel to winding axis 411A. This makes it possible to suppress coupling between chip inductor 411 and each of chip inductors 421 and 441.

[0128] The power amplifier circuit 11, the balun 15, and the matching circuit 41 are arranged in an area 901 on the main surface 90a of the module substrate 90 and within the module substrate 90. The area 901 is a rectangular area that encloses, in the smallest size, the area in which the power amplifier circuit 11, the balun 15, and the matching circuit 41 are arranged.

[0129] The power amplifier circuit 12, the balun 16, and the matching circuit 42 are arranged in an area 902 on the main surface 90a of the module substrate 90 and within the module substrate 90. The area 902 is a rectangular area that encloses, in the smallest size, the area in which the power amplifier circuit 12, the balun 16, and the matching circuit 42 are arranged.

[0130] The power amplifier circuit 13 , the balun 17 and the matching circuit 43 are disposed on the main surface 90 b of the module substrate 90 and within the module substrate 90 .

[0131] The power amplifier circuit 14, the balun 18, and the matching circuit 44 are arranged in an area 904 on the main surface 90a of the module substrate 90 and within the module substrate 90. The area 904 is a rectangular area that encloses, in the smallest size, the area in which the power amplifier circuit 14, the balun 18, and the matching circuit 44 are arranged.

[0132] The low-noise amplifier circuits 21 and 22 (LB LNA), the low-noise amplifier circuits 23 and 24 (MB LNA), the low-noise amplifier circuits 25 and 26 (NTN LNA), and the low-noise amplifier circuits 27 and 28 (HB LNA) are integrated into a single integrated circuit 20 and arranged in an area 907 on the main surface 90a of the module substrate 90. The area 907 is a rectangular area that surrounds the integrated circuit 20 in its minimum size.

[0133] The integrated circuit 20 may be disposed on the main surface 90b of the module substrate 90. In this case, the power amplifier circuit 13 may be disposed on the main surface 90a of the module substrate 90, and the matching circuit 43 may also be disposed on the main surface 90a of the module substrate 90.

[0134] In a plan view of the module substrate 90, each of the low-noise amplifier circuits 25 and 26 in the integrated circuit 20 at least partially overlaps with the power amplifier circuit 13, but does not overlap with the balun 17. On the other hand, each of the low-noise amplifier circuits 23, 24, 27, and 28 in the integrated circuit 20 at least partially overlaps with the balun 17.

[0135] A ground via 93 is formed in the module substrate 90, connecting the main surfaces 90a and 90b of the module substrate 90. The ground via 93 is disposed between the balun 17 and the low-noise amplifier circuits 25 and 26. In addition, a ground wiring 94 is formed in the module substrate 90. The ground wiring 94 is disposed between the balun 17 and the integrated circuit 20.

[0136] The semiconductor material of the integrated circuit 20 may be, for example, silicon monocrystal (Si), gallium nitride (GaN), or silicon carbide (SiC). In this case, some or all of the multiple amplification transistors included in the integrated circuit 20 may be configured with field effect transistors (FETs). Note that bipolar transistors may be used instead of FETs. The integrated circuit 20 may also be divided into multiple integrated circuits.

[0137] The duplexers 31 and 32 (LB DPX) are arranged in an area 905 on the main surface 90a of the module substrate 90. The area 905 is a rectangular area that encloses the duplexers 31 and 32 in the smallest size. The duplexers 31 and 32 may be, but are not limited to, a surface acoustic wave (SAW) filter, a bulk acoustic wave (BAW) filter, an LC resonant filter, a dielectric resonant filter, or any combination thereof.

[0138] The duplexers 33 and 34 (MB DPX), the duplexers 35 and 36, and the duplexers 37 and 38 (HB DPX) are arranged in an area 906 on the main surface 90a of the module substrate 90. The area 906 is a rectangular area that encloses the duplexers 33 to 38 in the smallest size. The duplexers 33 to 38 may be, but are not limited to, SAW filters, BAW filters, LC resonant filters, or dielectric resonant filters, or any combination thereof.

[0139] In the duplexer 35, the filter 351 (NTN TX) is arranged farther from the low-noise amplifier circuit 25 than the filter 352 (NTN RX). Similarly, in the duplexer 36, the filter 361 (NTN TX) is arranged farther from the low-noise amplifier circuit 26 than the filter 362 (NTN RX).

[0140] The switch circuits 51 to 53 are integrated into a single integrated circuit 50 (ASW), which is disposed on the main surface 90a of the module substrate 90. The semiconductor material of the integrated circuit 50 may be, for example, silicon single crystal (Si), gallium nitride (GaN), or silicon carbide (SiC).

[0141] The switch circuits 61 to 64 are integrated into one integrated circuit 60 (BSSW) and disposed on the main surface 90a of the module substrate 90. The semiconductor material of the integrated circuit 60 may be, for example, silicon single crystal (Si), gallium nitride (GaN), or silicon carbide (SiC).

[0142] Each of the metal walls 911, 913, 914, and 915 is a copper shield wall, and is provided to extend in the z-direction from the main surface 90a of the module substrate 90. The material of the metal walls 911, 913 to 915 is not limited to copper. For example, some or all of the material of the metal walls 911, 913 to 915 may be aluminum. The shape of the metal walls 911, 913 to 915 is not limited to a plate shape. For example, some or all of the metal walls 911, 913 to 915 may be a plurality of post electrodes.

[0143] The metal wall 911 is disposed between the regions 901 and 902 and is connected to ground. This allows the metal wall 911 to suppress coupling between the chip inductor 411 and the chip inductor 421 and coupling between the chip inductor 411 and the chip inductor 441.

[0144] The metal wall 913 is disposed between the region including the regions 901, 902, and 904 and the region including the regions 905 and 906, and is connected to ground, thereby preventing the transmission signals amplified by the power amplifier circuits 11 to 14 from leaking into the reception path.

[0145] The metal wall 914 is disposed between the regions 905 and 906 and is connected to the ground, thereby preventing harmonics of TN bands A and B included in the low band group from leaking into the signal paths of TN bands C, D, G, and H included in the mid band group and the high band group.

[0146] The metal wall 915 is disposed between the regions 905 and 907 and is connected to the ground, so that the metal wall 915 can ensure isolation of the low-noise amplifier circuits 21 to 28 and improve the NF (Noise Figure).

[0147] The metal walls 911 and 913 to 915 are optional components and may not be included in the high-frequency module 1 .

[0148] The plurality of external connection terminals 92 are arranged on the main surface 90b of the module substrate 90 and are connected to input / output terminals and a ground terminal of a motherboard (not shown). The plurality of external connection terminals 92 may be, for example, copper post electrodes, but are not limited to this. For example, the plurality of external connection terminals 92 may be solder electrodes.

[0149] [5. Summary] As described above, the high-frequency module 1 according to this embodiment includes: a module substrate 90 having principal surfaces 90 a and 90 b facing each other; a duplexer 35 disposed on the module substrate 90 and including a filter 351 having a pass band that includes the transmission band of NTN band E and a filter 352 having a pass band that includes the reception band of NTN band E; a power amplifier circuit 13 disposed on one of the principal surfaces 90 a and 90 b and connected to the filter 351; and a low-noise amplifier circuit 25 disposed on the other of the principal surfaces 90 a and 90 b and connected to the filter 352, and in a plan view of the module substrate 90, the power amplifier circuit 13 at least partially overlaps with the low-noise amplifier circuit 25.

[0150] This allows the power amplifier circuit 13 and the low-noise amplifier circuit 25 for NTN band E to be arranged separately on opposing main surfaces 90a and 90b of the module substrate 90, and further allows the power amplifier circuit 13 to be arranged so as to at least partially overlap the low-noise amplifier circuit 25. This allows the high-frequency module 1 to be miniaturized, thereby enabling the communication device 5 to be miniaturized. NTN band E is not used for simultaneous communication with other bands, and the frequency gap between the transmission band and the reception band is wide. This also allows for suppressing degradation of the transmission characteristics and / or reception characteristics caused by overlapping the power amplifier circuit 13 with the low-noise amplifier circuit 25.

[0151] For example, in the high-frequency module 1 according to this embodiment, the power amplifier circuit 13 may include a pair of power amplifiers T32 and T33 connected in parallel, and the high-frequency module 1 may further include a balun 17 including a primary coil 171 and a secondary coil 172 and formed by wiring arranged within the module substrate 90, and both ends of the primary coil 171 may be connected to the output terminals of the pair of power amplifiers T32 and T33, respectively, and one end of the secondary coil 172 may be connected to the filter 351.

[0152] According to this, the balun 17 is formed by wiring arranged inside the module substrate 90, and therefore the high-frequency module 1 can be further miniaturized.

[0153] Furthermore, for example, in the high-frequency module 1 according to the present embodiment, the balun 17 does not need to overlap the low-noise amplifier circuit 25 in a plan view of the module substrate 90 .

[0154] In this way, the balun 17 does not overlap with the low noise amplifier circuit 25, and therefore the isolation between the transmission path and the reception path can be improved.

[0155] For example, the high-frequency module 1 according to this embodiment may further include a ground via 93 formed on the module substrate 90, and the ground via 93 may be disposed between the balun 17 and the low-noise amplifier circuit 25.

[0156] According to this, the ground via 93 is disposed between the balun 17 and the low-noise amplifier circuit 25, so that the isolation between the transmission path and the reception path can be improved.

[0157] For example, the high-frequency module 1 according to this embodiment may further include a filter 372 disposed on the module substrate 90 and having a passband including the reception band of TN band G, and a low-noise amplifier circuit 27 connected to the filter 372, and in a planar view of the module substrate 90, the balun 17 may at least partially overlap with the low-noise amplifier circuit 27.

[0158] This allows the balun 17 for NTN band E to be arranged overlapping the low-noise amplifier circuit 27 for TN band G. This makes it possible to further reduce the size of the high-frequency module 1. In addition, because NTN band E and TN band G are not used simultaneously, deterioration of the transmission characteristics and / or reception characteristics of NTN band E and TN band G can be suppressed.

[0159] For example, the high-frequency module 1 according to this embodiment may further include a ground wiring 94 formed on the module substrate 90, and the ground wiring 94 may be disposed between the balun 17 and the low-noise amplifier circuit 27.

[0160] According to this, the ground wiring 94 is disposed between the balun 17 and the low-noise amplifier circuit 27, so that the isolation between the balun 17 and the low-noise amplifier circuit 27 can be improved.

[0161] For example, the high-frequency module 1 according to this embodiment may further include a plurality of external connection terminals 92 arranged on the main surface 90b, the power amplifier circuit 13 may be arranged on the main surface 90b, and the low-noise amplifier circuit 25 and the duplexer 35 may be arranged on the main surface 90a.

[0162] According to this, the power amplifier circuit 13 is disposed on the main surface 90b, which improves heat dissipation to the motherboard.

[0163] Furthermore, for example, in the high-frequency module 1 according to this embodiment, the filter 351 may be disposed farther from the low-noise amplifier circuit 25 than the filter 352 .

[0164] This allows the filter 351 for the NTN band E transmission signal to be located relatively far from the low noise amplifier circuit 25, thereby improving the isolation between the transmission path and the reception path.

[0165] Furthermore, for example, the high-frequency module 1 according to this embodiment may further include a metal wall 914 disposed between the low-noise amplifier circuit 25 and the duplexer 35 .

[0166] According to this, the metal wall 914 is disposed between the low-noise amplifier circuit 25 and the duplexer 35, thereby improving the isolation between the transmission path and the reception path.

[0167] Furthermore, for example, in the high-frequency module 1 according to the present embodiment, NTN band E may be n256 or n255 for 5G NR.

[0168] This allows the high-frequency module 1 to support the combination of n256 and n255 for 5GNR.

[0169] The communication device 5 according to this embodiment also includes an RFIC 3 that processes high-frequency signals, and a high-frequency module 1 configured to transmit high-frequency signals between the RFIC 3 and the antennas 2a, 2b, and 2c.

[0170] This allows the effects of the high frequency module 1 to be realized in the communication device 5 .

[0171] Other Embodiments While the high-frequency module and communication device according to the present invention have been described above based on the embodiments, the high-frequency module and communication device according to the present invention are not limited to the above embodiments. The present invention also includes other embodiments realized by combining any of the components in the above embodiments, modifications obtained by applying various modifications to the above embodiments that would occur to those skilled in the art without departing from the spirit of the present invention, and various devices incorporating the above-mentioned high-frequency module and communication device.

[0172] For example, in the circuit configurations of the radio frequency modules and communication devices according to the above embodiments, other circuit elements and wiring may be inserted between the paths connecting the circuit elements and signal paths shown in the drawings. For example, an impedance matching circuit may be connected between the duplexers 31 to 38 and the switch circuits 51 to 53. Also, for example, couplers may be connected between the switch circuits 51 to 53 and the antenna connection terminals 101 to 103.

[0173] For example, the high-frequency module 1 may also include a resin member that covers the components on the main surfaces 90a and 90b of the module substrate 90. This allows the high-frequency module 1 to ensure reliability, such as mechanical strength and moisture resistance, of the components on the main surfaces 90a and 90b. Furthermore, the high-frequency module 1 may also include a metal shielding layer that covers at least a portion of the surface of the resin member. This allows the high-frequency module 1 to prevent external noise from entering the electronic components that make up the high-frequency module 1 and to prevent noise generated in the high-frequency module 1 from interfering with other modules or other devices.

[0174] The features of the high frequency module and communication device described based on the above embodiments will be described below.

[0175] <1> A high-frequency module comprising: a module substrate having a first main surface and a second main surface opposing each other; a duplexer disposed on the module substrate, the duplexer including a first filter having a pass band including a transmission band of a non-terrestrial network (NTN) band, and a second filter having a pass band including a reception band of the NTN band; a power amplifier circuit disposed on one of the first main surface and the second main surface and connected to the first filter; and a first low-noise amplifier circuit disposed on the other of the first main surface and the second main surface and connected to the second filter, wherein the power amplifier circuit at least partially overlaps with the first low-noise amplifier circuit in a plan view of the module substrate.

[0176] <2> The high-frequency module according to <1>, wherein the power amplification circuit includes a pair of power amplifiers connected in parallel, the high-frequency module further includes a primary coil and a secondary coil and is provided with a balun formed by wiring arranged within the module substrate, both ends of the primary coil are connected to output terminals of the pair of power amplifiers, respectively, and one end of the secondary coil is connected to the first filter.

[0177] <3> The high-frequency module according to <2>, wherein the balun does not overlap the first low-noise amplifier circuit in a plan view of the module substrate.

[0178] <4> The high-frequency module according to <3>, further comprising a ground via formed in the module substrate, the ground via being disposed between the balun and the first low-noise amplifier circuit.

[0179] <5> The high-frequency module according to any one of <2> to <4>, further comprising: a third filter disposed on the module substrate and having a passband including a reception band of a TN (Terrestrial Network) band; and a second low-noise amplifier circuit connected to the third filter, wherein the balun at least partially overlaps with the second low-noise amplifier circuit in a plan view of the module substrate.

[0180] <6> The high-frequency module according to <5>, further comprising a ground wiring formed on the module substrate, the ground wiring being disposed between the balun and the second low-noise amplifier circuit.

[0181] <7> The high-frequency module according to any one of <1> to <6>, further comprising a plurality of external connection terminals arranged on the second main surface, the power amplifier circuit being arranged on the second main surface, and the first low-noise amplifier circuit and the duplexer being arranged on the first main surface.

[0182] <8> The high-frequency module according to <7>, wherein the first filter is disposed farther from the first low-noise amplifier circuit than the second filter.

[0183] <9> The high-frequency module according to <7> or <8>, further comprising a metal wall disposed between the first low-noise amplifier circuit and the duplexer.

[0184] <10> The high-frequency module according to any one of <1> to <9>, wherein the NTN band is n256 or n255 for 5G NR.

[0185] <11> A communication device comprising: a signal processing circuit that processes a high-frequency signal; and the high-frequency module according to any one of <1> to <10> that is configured to transmit the high-frequency signal between the signal processing circuit and an antenna.

[0186] The present invention can be widely used as a high-frequency module disposed in the front end of communication devices such as mobile phones.

[0187] REFERENCE SIGNS LIST 1 High frequency module 2a, 2b, 2c Antenna 3 RFIC 4 BBIC 5 Communication device 11, 12, 13, 14 Power amplifier circuit 15, 16, 17, 18, B14, B24, B34, B44 Balun 20, 50, 60 Integrated circuit 21, 22, 23, 24, 25, 26, 27, 28 Low noise amplifier circuit 31, 32, 33, 34, 35, 36, 37, 38 Duplexer 41, 42, 43, 44 Matching circuit 51, 52, 53, 61, 62, 63, 64 Switch circuit 90 Module substrate 90a, 90b Main surface 92 External connection terminal 93 Ground via 94 Ground wiring 101, 102, 103 Antenna connection terminal 111, 112, 113, 114 High frequency input terminals 121, 122, 123, 124, 125, 126, 127, 128 High frequency output terminals 151, 161, 171, 181, L141, L241, L341, L441 Primary coil 152, 162, 172, 182, L142, L242, L342, L442 Secondary coil 311, 312, 321, 322, 331, 332, 341, 342, 351, 352, 361, 362, 371, 372, 381, 382 Filter 411, 421, 431, 441 Chip inductor 411A, 421A, 441A Winding axis 510, 520, 530, 610, 620, 630, 640 Common terminals 511, 512, 521, 522, 523, 524, 531, 532, 611, 612, 621, 622, 631, 632, 641, 642 Selection terminals 901, 902, 904, 905, 906, 907 Areas 911, 913, 914, 915 Metal walls T11, T12, T13, T21, T22, T23, T31, T32, T33, T41, T42, T43 Power amplifier

Claims

1. A radio frequency module comprising: a module substrate having first and second main surfaces facing each other; a duplexer disposed on the module substrate, the duplexer including a first filter having a pass band including the transmit band of the NTN (Non-Terrestrial Network) band, and a second filter having a pass band including the receive band of the NTN band; a power amplifier circuit disposed on one of the first and second main surfaces and connected to the first filter; and a first low-noise amplifier circuit disposed on the other of the first and second main surfaces and connected to the second filter, wherein, in a plan view of the module substrate, the power amplifier circuit at least partially overlaps with the first low-noise amplifier circuit.

2. The high-frequency module according to claim 1, wherein the power amplification circuit includes a pair of power amplifiers connected in parallel, the high-frequency module further includes a primary coil and a secondary coil and is equipped with a balun formed by wiring arranged within the module substrate, both ends of the primary coil are connected to the output terminals of the pair of power amplifiers, and one end of the secondary coil is connected to the first filter.

3. The high frequency module according to claim 2, wherein the balun does not overlap the first low noise amplifier circuit in a plan view of the module substrate.

4. The high-frequency module according to claim 3, further comprising a ground via formed in the module substrate, the ground via being disposed between the balun and the first low-noise amplifier circuit.

5. The high-frequency module according to any one of claims 2 to 4, further comprising: a third filter disposed on the module substrate and having a passband that includes a receiving band of the TN (Terrestrial Network) band; and a second low-noise amplifier circuit connected to the third filter, wherein the balun at least partially overlaps with the second low-noise amplifier circuit in a plan view of the module substrate.

6. The high-frequency module according to claim 5, further comprising a ground wiring formed on the module substrate, the ground wiring being disposed between the balun and the second low-noise amplifier circuit.

7. The high-frequency module according to any one of claims 1 to 6, further comprising a plurality of external connection terminals arranged on the second main surface, the power amplifier circuit being arranged on the second main surface, and the first low-noise amplifier circuit and the duplexer being arranged on the first main surface.

8. The high-frequency module according to claim 7, wherein the first filter is disposed farther from the first low-noise amplifier circuit than the second filter.

9. The high-frequency module according to claim 7 or 8, further comprising a metal wall disposed between the first low-noise amplifier circuit and the duplexer.

10. The high-frequency module according to any one of claims 1 to 9, wherein the NTN band is n256 or n255 for 5G NR.

11. A communication device comprising: a signal processing circuit that processes a high-frequency signal; and a high-frequency module according to any one of claims 1 to 10 that is configured to transmit the high-frequency signal between the signal processing circuit and an antenna.

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