Release agent composition

Abstract

The present invention, according to one embodiment, provides a release agent composition having excellent resin mask dissolution speed.　The present disclosure, according to one embodiment, relates to a release agent composition comprising: a hydroxylamine (component A), an alkali agent other than component A (component B), an organic solvent other than component A and component B (component C), and water (component D). The mass ratio C / A of component C to component A is greater than 2.25 but no greater than 50, and the mass ratio D / A of component D to component A is less than11.

Description

Stripping composition

[0001] The present disclosure relates to a stripper composition, a method for stripping a resin mask, and a method for manufacturing an electronic component.

[0002] In recent years, personal computers and various electronic devices have become increasingly power-efficient, faster, and more compact, and the wiring on the package substrates and other components they are equipped with has been getting finer every year. Until now, metal masking has been the primary method used to form such fine wiring and connection terminals such as pillars and bumps, but due to its limited versatility and the difficulty of adapting to the miniaturization of wiring, new methods are being adopted.

[0003] One of the new methods is to use a dry film resist as a thick resin mask instead of a metal mask. This resin mask is finally stripped and removed using an alkaline stripper composition (strip cleaner).

[0004] For example, Japanese Patent Laid-Open Publication No. 2023-111873 (Patent Document 1) proposes a method for stripping a resin mask from a substrate having a thickness of 100 μm or more, using a cleaning composition containing a quaternary ammonium hydroxide, hydroxylamine, potassium hydroxide, and water, with the water content being 60 mass% or more. TW200910027 (Patent Document 2) proposes a color resist stripping liquid composition containing a hydroxide such as an inorganic salt hydroxide, at least one compound selected from C1-C4 alkyl group alkylene glycol ethers and alkylene glycols, hydroxylamine, an alkoxyalkylamine, and water.

[0005] In one aspect, the present disclosure relates to a stripper composition comprising hydroxylamine (component A), an alkaline agent other than component A (component B), an organic solvent other than components A and B (component C), and water (component D), wherein the mass ratio C / A of component C to component A is greater than 2.25 and not more than 50, and the mass ratio D / A of component D to component A is less than 11.

[0006] In one aspect, the present disclosure relates to a method for stripping a resin mask, comprising a step of stripping the resin mask from a substrate having the resin mask thereon using the stripper composition of the present disclosure.

[0007] In one aspect, the present disclosure relates to a method for manufacturing an electronic component, including the resin mask stripping method of the present disclosure.

[0008] When forming fine wiring on a printed circuit board or the like, a stripper composition is required to have high resin mask removability (removability) in order to reduce not only the residue of the resin mask but also the residue of auxiliary agents contained in the solder or plating solution used in forming the fine wiring, pillars, and bumps. As the wiring, pillars, and bumps become finer, the spacing between them also becomes finer, making it difficult to remove the resin mask present in the fine gaps, and therefore a stripper composition is required to have high resin mask removability (removability). In particular, dissolving the resin mask is an effective method for stripping and removing the resin mask present in the fine gaps, but it is not easy to dissolve a resin mask made of a high-molecular-weight resin. In addition, if the dissolution rate (dissolution rate) of the stripped resin mask is slow, there is also the problem that the stripped resin mask re-adheres to the substrate.

[0009] Therefore, the present disclosure provides a stripping agent composition that has an excellent dissolution rate for a resin mask, a method for stripping a resin mask, and a method for manufacturing an electronic component.

[0010] According to one aspect of the present disclosure, a stripper composition having an excellent dissolution rate for a resin mask can be provided.

[0011] [Stripper Composition] In one or more embodiments, the present disclosure is based on the finding that by using an alkaline stripper containing hydroxylamine and an organic solvent in a specific ratio, the resin mask can be dissolved at a high rate and efficiently removed (stripped).

[0012] In one aspect, the present disclosure relates to a stripper composition (hereinafter also referred to as the “stripper composition of the present disclosure”) that contains hydroxylamine (component A), an alkaline agent other than component A (component B), an organic solvent other than components A and B (component C), and water (component D), in which the mass ratio C / A of component C to component A is greater than 2.25 and not more than 50, and the mass ratio D / A of component D to component A is less than 11.

[0013] According to the present disclosure, a stripper composition having an excellent dissolution rate for a resin mask can be provided.

[0014] Although the details of the mechanism of action by which the effects of the present disclosure are exhibited are partially unclear, it is presumed as follows. Generally, dissolving a resin mask present in the gaps of a fine metal pattern is effective in removing the resin mask, but dissolving a resin mask composed of a high molecular weight resin is not easy. However, the stripper composition of the present disclosure contains hydroxylamine (component A), an alkaline agent (component B), an organic solvent (component C), and water (component D). By setting the content ratio of hydroxylamine (component A) to the organic solvent (component C) and the content ratio of hydroxylamine (component A) to the water (component D) within specific ranges, it is believed that the alkaline agent (component B) penetrates into the resin mask to sever crosslinked portions of the resin mask, and the hydroxylamine (component A) penetrates into the resin mask to promote dissociation of the alkali-soluble resin contained in the resin mask, thereby improving the dissolution rate of the resin mask. However, the present disclosure need not be interpreted as being limited to this mechanism.

[0015] In one or more embodiments, the stripper composition of the present disclosure is a stripper composition for stripping a resin mask. In the present disclosure, stripping a resin mask may include dissolving the resin mask, removing the resin mask, and cleaning the resin mask. By using the stripper composition of the present disclosure for cleaning a substrate having a resin mask, the resin mask can be efficiently removed with an excellent dissolution rate. Furthermore, by using the stripper composition of the present disclosure for cleaning electronic components such as electronic circuit boards having a resin mask, high-quality electronic components can be obtained with a high yield.

[0016] In the present disclosure, a resin mask is a mask that protects the surface of a material from processes such as etching, plating, and heating, i.e., a mask that functions as a protective film. In one or more embodiments, the resin mask may be a resist layer after exposure and development, a resist layer that has been subjected to at least one of exposure and development (hereinafter also referred to as "exposed and / or developed"), or a hardened resist layer. Resist masks are formed using resists whose physical properties, such as solubility in a developer, change when exposed to light or an electron beam. Resists are broadly classified into negative and positive types based on how they react with light or an electron beam. Negative resists have the property of decreasing solubility in a developer upon exposure, and the exposed portions of a layer containing negative resist (hereinafter also referred to as a "negative resist layer") are used as a resin mask after exposure and development. Positive resists have the property of increasing solubility in a developer upon exposure, and the exposed portions of a layer containing positive resist (hereinafter also referred to as a "positive resist layer") are removed after exposure and development, leaving the unexposed portions used as a resin mask. By using a resin mask having such properties, fine connections on a circuit board, such as metal wiring, metal pillars, and solder bumps, can be formed. In one or more embodiments, the resin material used to form the resin mask can be a film-like photosensitive resin, a resist film, or a photoresist. A general-purpose resist film can be used, with a negative resist film being preferred. Examples of the resin mask include an acrylic acid-based polymer film. When high-rise pillars need to be formed, it is preferable to use a resist (resin mask) having a thickness of, for example, more than 100 μm. Furthermore, when preparing a resist pattern with a high aspect ratio that is thick relative to the wiring width, pillar pitch, or bump pitch, it is preferable to use a high-hardness resist as the resin mask. Here, a resist pattern with a high aspect ratio that is thick relative to the wiring width, pillar pitch, or bump pitch can be, for example, a copper pillar pattern formed by patterning a resist to form cylindrical holes and then depositing copper in the holes by copper plating.

[0017] (Component A: Hydroxylamine) The stripper composition of the present disclosure contains hydroxylamine (hereinafter also referred to as "Component A"). From the viewpoints of improving the dissolution rate of the resin mask (resist), miscibility, and resin mask removability (stripping ability), the content of Component A in the stripper composition of the present disclosure is preferably 3% by mass or more, more preferably 5% by mass or more, and from the same viewpoints, preferably 30% by mass or less, more preferably 20% by mass or less, and more preferably 15% by mass or less. More specifically, the content of Component A in the stripper composition of the present disclosure is preferably 3% by mass or more and 30% by mass or less, more preferably 5% by mass or more and 20% by mass or less, and even more preferably 5% by mass or more and 15% by mass or less.

[0018] (Component B: Alkaline Agent) The stripper composition of the present disclosure contains an alkaline agent other than Component A (hereinafter also referred to as "Component B"). Component B may be one type or a combination of two or more types. In one or more embodiments, from the viewpoints of improving the dissolution rate of the resin mask (resist), miscibility, and resin mask removability (stripping ability), Component B is preferably an alkali containing at least one selected from quaternary ammonium hydroxide (Component B1), alkanolamine (Component B2), and inorganic metal hydroxide (Component B3); more preferably an alkali containing Component B2, an alkali containing Components B1 and B2, or an alkali containing Components B1, B2, and B3; and even more preferably an alkali consisting of Components B1 and B2, or an alkali consisting of Components B1, B2, and B3. In one or more embodiments, from the same viewpoints, the total content of Components B1 and B2 in Component B is preferably 3% by mass or more, more preferably 5% by mass or more, and even more preferably 7% by mass or more. In one or more embodiments, from the same viewpoint, the total content of components B1 and B2 in component B is preferably 50% by mass or more, or 60% by mass or more, or 70% by mass or less, and preferably 100% by mass or less, or 90% by mass or less. In one or more embodiments, from the same viewpoint, the total content of components B1, B2, and B3 in component B is preferably 5% by mass or more, more preferably 7% by mass or more, and even more preferably 9% by mass or more. In one or more embodiments, from the same viewpoint, the total content of components B1, B2, and B3 in component B is preferably 50% by mass or more, or 70% by mass or more, or 90% by mass or more, and preferably 100% by mass or less.

[0019] <Component B1: Quaternary Ammonium Hydroxide> From the viewpoint of resin mask removability, the quaternary ammonium hydroxide (component B1) is preferably a quaternary ammonium hydroxide having a total of 10 or less carbon atoms, more preferably tetramethylammonium hydroxide. Component B1 may be used alone or in combination of two or more. When the stripper composition of the present disclosure contains component B1, the content of component B1 in the stripper composition of the present disclosure is preferably 0.1% by mass or more, more preferably 1% by mass or more, even more preferably 1.5% by mass or more, from the viewpoint of improving resin mask removability (stripping ability). Furthermore, from the viewpoint of improving resin mask removability (stripping ability) and waste liquid treatability, it is preferably 10% by mass or less, more preferably 8% by mass or less, even more preferably 7% by mass or less. More specifically, the content of component B1 in the stripper composition of the present disclosure is preferably 0.1% by mass or more and 10% by mass or less, more preferably 1% by mass or more and 8% by mass or less, and even more preferably 1.5% by mass or more and 7% by mass or less. When Component B1 is a combination of two or more types, the content of Component B1 refers to the total content thereof.

[0020] <Component B2: Alkanolamine> As the alkanolamine (component B2), from the viewpoint of improving resin mask removability (stripping ability), preferably an alkanolamine having a total of 6 or less carbon atoms, more preferably monoethanolamine, is used. Component B2 may be one type or a combination of two or more types. When the stripper composition of the present disclosure contains component B2, from the viewpoint of improving resin mask removability (stripping ability), the content of component B2 in the stripper composition of the present disclosure is preferably 0.1 mass% or more, more preferably 0.5 mass% or more, even more preferably 3 mass% or more, and still more preferably 7 mass% or more. From the viewpoints of improving resin mask removability (stripping ability), waste liquid treatability, suppressing damage to the substrate resin, and suppressing damage to the substrate metal, the content of component B2 is preferably 20 mass% or less, more preferably 15 mass% or less, and even more preferably 13 mass% or less. More specifically, the content of Component B2 in the release agent composition of the present disclosure is preferably from 0.1% by mass to 20% by mass, more preferably from 0.5% by mass to 15% by mass, even more preferably from 3% by mass to 13% by mass, and still more preferably from 7% by mass to 13% by mass. When Component B2 is a combination of two or more types, the content of Component B2 refers to the total content thereof.

[0021] <Component B3: Inorganic Metal Hydroxide> Examples of the inorganic metal hydroxide (component B3) include alkali metal hydroxides. From the viewpoint of improving resin mask removability (stripping ability), preferably, at least one selected from lithium hydroxide, sodium hydroxide, and potassium hydroxide is used, more preferably, at least one of sodium hydroxide and potassium hydroxide, and even more preferably, potassium hydroxide is used. Component B3 may be used alone or in combination of two or more. When the stripper composition of the present disclosure contains component B3, from the viewpoint of improving resin mask removability (stripping ability), the content of component B3 in the stripper composition of the present disclosure is preferably 0.1% by mass or more, more preferably 0.5% by mass or more, even more preferably 1% by mass or more, and from the viewpoint of improving resin mask removability (stripping ability) and miscibility, preferably 5% by mass or less, more preferably 4% by mass or less, even more preferably 3% by mass or less. More specifically, the content of Component B3 in the release agent composition of the present disclosure is preferably from 0.1% by mass to 5% by mass, more preferably from 0.5% by mass to 4% by mass, and even more preferably from 1% by mass to 3% by mass. When Component B3 is a combination of two or more types, the content of Component B3 refers to the total content thereof.

[0022] The content of Component B in the stripper composition of the present disclosure is preferably 5% by mass or more, more preferably 10% by mass or more, from the viewpoint of improving the removability (stripping property) of the resin mask, and from the same viewpoint, is preferably 25% by mass or less, more preferably 20% by mass or less. More specifically, the content of Component B in the stripper composition of the present disclosure is preferably 5% by mass or more and 25% by mass or less, more preferably 10% by mass or more and 20% by mass or less.

[0023] The mass ratio A / B (content of component A / content of component B) of hydroxylamine (component A) to alkaline agent (component B) in the stripper composition of the present disclosure is preferably 0.2 or more, more preferably 0.5 or more, from the viewpoints of improving the dissolution rate of the resin mask (resist) and improving the removability (stripping ability) of the resin mask, and from the same viewpoints, is preferably 2 or less, more preferably 1 or less. More specifically, the mass ratio A / B is preferably 0.2 or more and 2 or less, more preferably 0.5 or more and 1 or less. When component B contains an alkanolamine (component B2), the mass ratio A / B2 of the hydroxylamine (component A) to the alkanolamine (component B2) (hydroxylamine content / alkanolamine content) is preferably 0.3 or more, more preferably 0.4 or more, and even more preferably 0.5 or more, from the viewpoints of improving the dissolution rate of the resin mask (resist) and improving the removability (stripping ability) of the resin mask, and from the same viewpoints, is preferably 2.0 or less, more preferably 1.7 or less, and even more preferably 1.5 or less. More specifically, the mass ratio A / B2 is preferably 0.3 or more and 2.0 or less, more preferably 0.4 or more and 1.7 or less, and even more preferably 0.5 or more and 1.5 or less.

[0024] (Component C: Organic Solvent) The stripper composition of the present disclosure contains an organic solvent other than Component A and Component B (hereinafter also referred to as "Component C"). Component C may be one type or a combination of two or more types. From the viewpoint of improving the dissolution rate of the resin mask (resist) and improving the removability (stripping ability) of the resin mask, Component C preferably contains an organic solvent having a hydroxyl group, and more preferably is an organic solvent having a hydroxyl group. From the same viewpoint, the content of the organic solvent having a hydroxyl group in Component C is preferably 20% by mass or more, more preferably 30% by mass or more, and even more preferably 40% by mass or more. Examples of organic solvents having a hydroxyl group include glycol ethers. Examples of glycol ethers include compounds having a structure in which 1 to 3 moles of ethylene glycol are added to an alcohol having 1 to 8 carbon atoms, and examples thereof include at least one selected from diethylene glycol monobutyl ether (BDG), ethylene glycol monobenzyl ether, diethylene glycol monohexyl ether, ethylene glycol monophenyl ether, diethylene glycol diethyl ether, and triethylene glycol (TEG). Among these, from the viewpoints of improving the dissolution rate of the resin mask (resist) and improving the removability (stripping ability) of the resin mask, at least one of diethylene glycol monobutyl ether (BDG) and triethylene glycol (TEG) is preferred, and a combination of diethylene glycol monobutyl ether (BDG) and triethylene glycol (TEG) is more preferred. From the same viewpoint, Component C preferably contains a glycol ether, and more preferably contains diethylene glycol monobutyl ether (BDG).

[0025] The content of component C in the stripper composition of the present disclosure is preferably 20% by mass or more, more preferably 30% by mass or more, and even more preferably 40% by mass or more, from the viewpoints of improving the dissolution rate of the resin mask (resist), improving the removability (stripping ability) of the resin mask, stability, and odor suppression. From the same viewpoints, it is preferably 80% by mass or less, more preferably 70% by mass or less, and even more preferably 65% ​​by mass or less. More specifically, the content of component C in the stripper composition of the present disclosure is preferably 20% by mass or more and 80% by mass or less, more preferably 30% by mass or more and 70% by mass or less, and even more preferably 40% by mass or more and 65% by mass or less. When component C is a combination of two or more types, the content of component C refers to the total content thereof.

[0026] The mass ratio C / A (content of component C / content of component A) of the organic solvent (component C) to the hydroxylamine (component A) in the stripper composition of the present disclosure is, from the viewpoint of improving the dissolution rate of the resin mask (resist), greater than 2.25, preferably 2.5 or greater, more preferably 3 or greater, and even more preferably 3.5 or greater, and from the same viewpoint, is 50 or less, preferably 20 or less, and more preferably 10 or less. More specifically, the mass ratio C / A is greater than 2.25 and 50 or less, preferably 2.5 or greater and 50 or less, more preferably 3 or greater and 20 or less, and even more preferably 3.5 or greater and 10 or less.

[0027] (Component D: Water) In one or more embodiments, the stripper composition of the present disclosure contains water (hereinafter also referred to as "component D"). Examples of component D include ion-exchanged water, RO water, distilled water, pure water, and ultrapure water.

[0028] The content of component D in the stripper composition of the present disclosure can be the remainder excluding components A, B, C, and optional components (other components described below). For example, from the viewpoints of improving the dissolution rate of the resin mask, miscibility, and resin mask removability (stripping ability), the content of component D in the stripper composition of the present disclosure is preferably 3% by mass or more, more preferably 6% by mass or more, and even more preferably 9% by mass or more. From the same viewpoints, the content of component D is preferably 30% by mass or less, more preferably 25% by mass or less, and even more preferably 15% by mass or less. More specifically, the content of component D in the stripper composition of the present disclosure is preferably 3% by mass or more and 30% by mass or less, more preferably 6% by mass or more and 25% by mass or less, and even more preferably 9% by mass or more and 15% by mass or less.

[0029] In the stripper composition of the present disclosure, the mass ratio D / A of water (component D) to hydroxylamine (component A) (content of component D / content of component A) is less than 11, preferably less than 6, more preferably 5 or less, and even more preferably 3 or less, from the viewpoint of improving the dissolution rate of the resin mask, and from the viewpoint of miscibility, is preferably 0.1 or more, more preferably 0.3 or more, and even more preferably 0.5 or more. More specifically, the mass ratio D / A is preferably 0.1 or more and less than 11, more preferably 0.3 or more and less than 6, more preferably 0.5 or more and less than 5, and even more preferably 0.5 or more and less than 3.

[0030] The mass ratio C / D (content of component C / content of component D) of the organic solvent (component C) to water (component D) in the stripper composition of the present disclosure is preferably 60 / 40 or more and 100 / 0 or less, more preferably 65 / 35 or more and 95 / 5 or less, and even more preferably 80 / 20 or more and 90 / 10 or less, from the viewpoints of improving the dissolution rate of the resin mask, miscibility, and removability (stripping ability) of the resin mask.

[0031] In the present disclosure, the "content of each component of the stripper composition" refers to the content of each component at the time of use, i.e., at the time when the stripper composition is started to be used for cleaning (resin mask removal treatment). In one or more embodiments, the content of each component in the stripper composition of the present disclosure can be considered as the blending amount of each component in the stripper composition of the present disclosure.

[0032] (Other Components) In one or more embodiments, the stripper composition of the present disclosure may further contain other components as necessary, as long as the effects of the present disclosure are not impaired. Examples of other components include amines other than Component A, alkali agents other than Components A and B, solvents other than Component C, surfactants, chelating agents, thickeners, dispersants, rust inhibitors, polymeric compounds, solubilizers, antioxidants, preservatives, antifoaming agents, and antibacterial agents. When the stripper composition of the present disclosure contains other components, the content of the other components in the stripper composition of the present disclosure is preferably 0% by mass or more and 2% by mass or less, more preferably 0% by mass or more and 1.5% by mass or less, even more preferably 0% by mass or more and 1.3% by mass or less, and even more preferably 0% by mass or more and 1% by mass or less.

[0033] In one or more embodiments, the stripper composition of the present disclosure may contain dimethyl sulfoxide (DMSO), or in one or more embodiments, may be substantially free of dimethyl sulfoxide (DMSO). For example, the content of DMSO in the stripper composition of the present disclosure is preferably 5% by mass or less, more preferably 1% by mass or less, and even more preferably 0% by mass (i.e., no DMSO is contained).

[0034] (pH) From the viewpoint of improving the removability (removal property) of the resin mask, the pH of the stripper composition of the present disclosure is preferably 10 or more, more preferably 12 or more, and even more preferably 13 or more, and from the viewpoint of suppressing damage to the substrate resin, it is preferably 18 or less, more preferably 17 or less, and even more preferably 16 or less. The pH of the stripper composition is a value at 25°C and can be measured using pH, specifically, by the method described in the examples.

[0035] The stripper composition according to the present disclosure may be a so-called one-component type, in which all components are premixed and supplied to the market, or may be a so-called two-component type, in which components are mixed at the time of use.

[0036] (Method for Producing Stripper Composition) In one or more embodiments, the stripper composition of the present disclosure can be produced by blending Component A, Component B, Component C, Component D, and, if necessary, the optional components (other components) described above, by a known method. For example, in one or more embodiments, the stripper composition of the present disclosure can be produced by blending at least Component A, Component B, Component C, and Component D. Accordingly, the present disclosure relates to a method for producing a cleaner composition, including a step of blending at least Component A, Component B, Component C, and Component D. In the present disclosure, "blending" includes mixing Component A, Component B, Component C, Component D, and, if necessary, the optional components (other components) described above, simultaneously or in any order. In the method for producing a cleaner composition of the present disclosure, the preferred amount of each component can be the same as the preferred content of each component of the cleaner composition of the present disclosure described above.

[0037] The stripper composition of the present disclosure may be in a form that is used for cleaning as is, or may be prepared as a concentrate to the extent that separation, precipitation, etc. do not occur and storage stability is not impaired. The stripper composition concentrate can be used by diluting it so that each component has the above-mentioned content (i.e., the content at the time of cleaning) at the time of use. The stripper composition concentrate can also be used by adding each component separately at the time of use. In the present disclosure, "at the time of use" or "at the time of cleaning" of the concentrated stripper composition refers to the state in which the stripper composition concentrate is diluted.

[0038] [Object to be cleaned] In one or more embodiments, the object to be cleaned may be a substrate having a resin mask, a substrate having a passivation film and a resin mask, etc. In one or more embodiments, the substrate having a resin mask is preferably a substrate further having a passivation film, from the viewpoint of being able to suppress wrinkles and chipping of the passivation film while peeling off the resin mask. Examples of the substrate include a printed circuit board, a wafer, a copper plate, and an aluminum plate.

[0039] In one or more embodiments, the object to be cleaned may include an object to be cleaned having a resin mask attached thereto. In one or more embodiments, the object to be cleaned having a resin mask attached thereto may include an electronic component having a resin mask and its manufacturing intermediate, an electronic component having a passivation film and a resin mask and its manufacturing intermediate, etc. Examples of electronic components include at least one component selected from a printed circuit board, a wafer, and a metal plate such as a copper plate or an aluminum plate. The manufacturing intermediate is an intermediate product in the manufacturing process of an electronic component, including an intermediate product after resin mask treatment. Specific examples of objects to be cleaned having a resin mask attached thereto include electronic components having a passivation film obtained by applying a resist film (resin mask) to a substrate obtained by undergoing a wiring formation process in which wiring is formed on a substrate, a passivation film formation process in which a passivation film is formed on the substrate with wiring formed thereon, a resist film formation process in which a resist is applied to the passivation film and developed and / or exposed to light to form a patterned resist film, and an etching process in which the passivation film is etched using the patterned resist film as a mask. Furthermore, from the viewpoint of releasability of the resin mask, it is preferable that the object to be cleaned does not undergo a dry etching step or a dry ashing step after the resin mask has been exposed and / or developed.

[0040] The resin mask may be, for example, a negative resin mask or a positive resin mask. In the present disclosure, a negative resin mask is formed using a negative resist, for example, a negative resist layer that has been exposed and / or developed. In the present disclosure, a positive resin mask is formed using a positive resist, for example, a positive resist layer that has been exposed and / or developed. In the resin mask stripping method of the present disclosure, the resin mask present in gaps between wiring, pillars, bumps, etc. can be stripped. From the viewpoint of exhibiting the releasability of the resin mask, it is preferable to clean a negative resist layer. In one or more embodiments, the thickness of the resin mask is 100 μm or more, and from the viewpoint of being able to be stripped even if it is thick, it is preferably 150 μm or more, more preferably 200 μm or more. Furthermore, from the viewpoint of releasability, the thickness of the resin mask is preferably 500 μm or less, more preferably 350 μm or less. From the viewpoint of releasability of the resin mask, the gap between the wirings is preferably 30 μm or more, more preferably 100 μm or more, and preferably 500 μm or less, more preferably 300 μm or less. From the viewpoint of releasability of the resin mask, the pitch (gap) between the pillars and bumps is preferably 100 μm or more, more preferably 150 μm or more, and preferably 1000 μm or less, more preferably 500 μm or less.

[0041] In one or more embodiments of the present disclosure, a passivation film refers to a surface protection film that protects a semiconductor element from external damage. Examples of the passivation film include at least one polymer film selected from polyimide (PI)-based polymers, polybenzoxazole (PBO)-based polymers, and silicone-based polymers. The thickness of the passivation film is, for example, 5 μm or more and 20 μm or less. Even if the thickness is thin, the thickness is preferably 12 μm or less, and more preferably 10 μm or less, from the viewpoint of suppressing damage during peeling of the resin mask.

[0042] [Removal Method] In one aspect, the present disclosure relates to a method for removing a resin mask (hereinafter also referred to as the "removal method of the present disclosure"), which includes a step of removing a resin mask from a substrate (object to be cleaned) having the resin mask thereon using a stripper composition of the present disclosure (hereinafter also simply referred to as the "removal step"). Examples of the object to be cleaned in the stripping step include the above-mentioned objects to be cleaned.

[0043] The stripping method of the present disclosure includes a step of stripping a resin mask from a substrate (object to be cleaned) having the resin mask thereon using the stripper composition of the present disclosure (hereinafter also simply referred to as a "stripping step"). In one or more embodiments, the stripping step includes contacting the object to be cleaned with the stripper composition of the present disclosure. According to the stripping method of the present disclosure, the resin mask can be efficiently removed.

[0044] Examples of a method for peeling a resin mask from an object to be cleaned using the stripper composition of the present disclosure, or a method for contacting an object to be cleaned with the stripper composition of the present disclosure, include a method of contacting the object by immersing the object in a cleaning bath containing the stripper composition, a method of contacting the object by spraying the stripper composition (shower method), and an ultrasonic cleaning method of irradiating the object with ultrasonic waves while immersed in the stripper composition. The stripper composition of the present disclosure can be used for cleaning as is without dilution. Examples of objects to be cleaned include the above-mentioned objects. The immersion time can be, for example, from 1 minute to 60 minutes, and even from 5 minutes to 30 minutes. The spray time can be, for example, from 1 minute to 60 minutes, and even from 3 minutes to 30 minutes.

[0045] In one or more embodiments, the stripping method of the present disclosure can include a step of contacting the object to be cleaned with the stripper composition of the present disclosure, followed by rinsing with water and drying. Examples of rinsing methods include rinsing with running water. Examples of drying methods include air blow drying. In one or more embodiments, the stripping method of the present disclosure can include a step of contacting the object to be cleaned with the stripper composition of the present disclosure, followed by rinsing with water.

[0046] In the stripping method of the present disclosure, ultrasonic waves are preferably applied when the stripper composition of the present disclosure comes into contact with the object to be cleaned, since the stripping and cleaning power of the stripper composition of the present disclosure can be easily exerted, and the ultrasonic waves are more preferably relatively high frequency. From the same viewpoint, the ultrasonic irradiation conditions are, for example, preferably 26 to 72 kHz and 80 to 1500 W, and more preferably 36 to 72 kHz and 80 to 1500 W.

[0047] In the stripping method of the present disclosure, the temperature of the stripper composition of the present disclosure is preferably 40°C or higher, more preferably 50°C or higher, from the viewpoint of easily exhibiting the stripping and cleaning power of the stripper composition of the present disclosure, and is preferably 70°C or lower, more preferably 60°C or lower, from the viewpoint of reducing the effect on the substrate.

[0048] [Method for Manufacturing Electronic Components] In one aspect, the present disclosure relates to a method for manufacturing electronic components (hereinafter also referred to as the "method for manufacturing electronic components of the present disclosure") that includes the stripping method of the present disclosure. In one or more embodiments, the method for manufacturing electronic components of the present disclosure is a method for manufacturing electronic components that includes a step (stripping step) of stripping a resin mask from a substrate (object to be cleaned) that has the resin mask thereon using the stripper composition of the present disclosure. Examples of the object to be cleaned include the objects to be cleaned described above. According to the method for manufacturing electronic components of the present disclosure, the resin mask attached to the electronic component can be effectively stripped, thereby enabling the production of highly reliable electronic components. Furthermore, by using the stripper composition of the present disclosure, the resin mask attached to the electronic component can be easily stripped, thereby shortening the stripping time (cleaning time) and improving the production efficiency of electronic components.

[0049] In one or more embodiments, the method for producing an electronic component according to the present disclosure can include the following steps (1) to (5): (1) a step of forming wiring on a substrate (wiring formation step), (2) a step of forming a passivation film on the substrate on which wiring has been formed (passivation film formation step), (3) a step of applying a resist onto the passivation film, exposing and / or developing the resist, and forming a patterned resist film (resist film formation step), (4) various processing steps such as plating, development, and etching using the patterned resist film as a mask (processing step), and (5) a step of stripping the resist film (resin mask) using the stripper composition according to the present disclosure (stripping step).

[0050] [Kit] In one aspect, the present disclosure relates to a kit (hereinafter also referred to as the "kit of the present disclosure") for use in either the stripping method of the present disclosure or the method for producing an electronic component of the present disclosure. In one or more embodiments, the kit of the present disclosure is a kit for producing the stripper composition of the present disclosure. The kit of the present disclosure can provide a stripper composition that exhibits an excellent dissolution rate for a resin mask. In one or more embodiments, the kit of the present disclosure includes a kit (two-component cleaning composition) that contains a first liquid and a second liquid in an unmixed state, and in which Component A, Component B, Component C, and Component D are contained in either or both of the first liquid and the second liquid, and the first liquid and the second liquid are mixed during use. The first liquid and the second liquid may each contain the optional components (other components) described above, as necessary.

[0051] The present disclosure further relates to one or more of the following embodiments: <1> A stripper composition containing hydroxylamine (component A), an alkaline agent other than component A (component B), an organic solvent other than components A and B (component C), and water (component D), wherein the mass ratio C / A of component C to component A is more than 2.25 and not more than 50, and the mass ratio D / A of component D to component A is less than 11. <2> The stripper composition according to <1>, wherein the mass ratio C / A of component C to component A is 2.5 or more, or 3 or more, or 3.5 or more, and is 50 or less, or 20 or less, or 10 or less. <3> The stripper composition according to <1> or <2>, wherein the content of component A is 3% by mass or more, or 5% by mass or more, and 30% by mass or less, or 20% by mass or less, or 15% by mass or less. <4> The stripper composition according to any one of <1> to <3>, wherein component B comprises at least one selected from a quaternary ammonium hydroxide (component B1), an alkanolamine (component B2), and an inorganic metal hydroxide (component B3). <5> The stripper composition according to any one of <1> to <4>, wherein component B comprises a quaternary ammonium hydroxide (component B1), an alkanolamine (component B2), and an inorganic metal hydroxide (component B3). <6> The stripper composition according to any one of <1> to <5>, wherein component B comprises an alkanolamine (component B2). <7> The stripper composition according to any one of <1> to <6>, wherein the content of component B is 5% by mass or more, or 10% by mass or more, and 25% by mass or less, or 20% by mass or less. <8> The stripping composition according to any one of <4> to <7>, wherein the content of component B1 is 0.1% by mass or more, or 1% by mass or more, or 1.5% by mass or more, and 10% by mass or less, or 8% by mass or less, or 7% by mass or less. <9> The stripping composition according to any one of <4> to <8>, wherein the content of component B2 is 0.1% by mass or more, or 0.5% by mass or more, or 3% by mass or more, or 7% by mass or more, and 20% by mass or less, or 15% by mass or less, or 13% by mass or less.<10> The stripping agent composition according to any one of <4> to <9>, wherein the content of Component B3 is 0.1% by mass or more, or 0.5% by mass or more, or 1% by mass or more, and 5% by mass or less, or 4% by mass or less, or 3% by mass or less. <11> The stripping agent composition according to any one of <4> to <10>, wherein the total content of Components B1 and B2 in Component B is 50% by mass or more, or 60% by mass or more, or 70% by mass or less, and 100% by mass or less, or 90% by mass or less. <12> The stripping agent composition according to any one of <4> to <11>, wherein the total content of Components B1, B2, and B3 in Component B is 50% by mass or more, or 70% by mass or more, or 90% by mass or more, and 100% by mass or less. <13> The stripper composition according to any one of <4> to <12>, wherein component B1 is a quaternary ammonium hydroxide having a total of 10 or less carbon atoms, or tetramethylammonium hydroxide. <14> The stripper composition according to any one of <4> to <13>, wherein component B2 is an alkanolamine having a total of 6 or less carbon atoms, or monoethanolamine. <15> The stripper composition according to any one of <4> to <14>, wherein component B3 is an alkali metal hydroxide, or at least one selected from lithium hydroxide, sodium hydroxide, and potassium hydroxide. <16> The stripper composition according to any one of <1> to <15>, wherein the mass ratio A / B of hydroxylamine (component A) to the alkali agent (component B) is 0.2 or more, or 0.5 or more, and 2 or less, or 1 or less. <17> The stripping composition according to any one of <1> to <16>, wherein, when component B contains an alkanolamine (component B2), the mass ratio A / B2 of the hydroxylamine (component A) to the alkanolamine (component B2) is 0.3 or more, or 0.4 or more, or 0.5 or more, and 2.0 or less, or 1.7 or less, or 1.5 or less. <18> The stripping composition according to any one of <1> to <17>, wherein the mass ratio D / A of component D to component A is less than 6, or 5 or less, or 3 or less, and 0.1 or more, or 0.3 or more, or 0.5 or more.<19> The stripper composition according to any one of <1> to <18>, wherein component C contains an organic solvent having a hydroxyl group. <20> The stripper composition according to any one of <1> to <19>, wherein component C contains a glycol ether. <21> The stripper composition according to any one of <1> to <20>, wherein component C contains diethylene glycol monobutyl ether. <22> The stripper composition according to any one of <1> to <21>, wherein the content of water (component D) is 30% by mass or less, or 25% by mass or less, or 15% by mass or less, and 3% by mass or more, or 6% by mass or more, or 9% by mass or more. <23> The stripper composition according to any one of <1> to <22>, wherein the mass ratio C / D of component C to component D is 60 / 40 or more, or 65 / 35 or more, and 100 / 0 or less, or 95 / 5 or less, or 90 / 10 or less. <24> The stripper composition according to any one of <1> to <23>, which is substantially free of dimethyl sulfoxide. <25> A method for stripping a resin mask, comprising a step of stripping a resin mask from a substrate having the resin mask thereon, using the stripper composition according to any one of <1> to <24>. <26> A method for producing an electronic component, comprising the method for stripping a resin mask according to <25>.

[0052] The present disclosure will be specifically described below using examples, but the present disclosure is not limited to these examples in any way.

[0053] 1. Preparation of Stripper Compositions of Examples 1 to 5 and Comparative Examples 1 to 4 The components shown in Table 1 were blended in the blending amounts (mass%, active ingredient) shown in Table 1 and then stirred to mix, thereby preparing the stripper compositions of Examples 1 to 5 and Comparative Examples 1 to 4. The pH of each stripper composition was 15 for Example 1, 15 for Example 2, 16 for Example 3, 15 for Example 4, 15 for Example 5, 14 for Comparative Example 1, 15 for Comparative Example 2, 14 for Comparative Example 3, and 15 for Comparative Example 4.

[0054] The following materials were used to prepare the stripping composition: (Component A) Hydroxylamine (HA) [Fujifilm Wako Pure Chemical Industries, 50% aqueous solution] (Component B) B1: Tetramethylammonium hydroxide (TMAH) [Fujifilm Wako Pure Chemical Industries, pentahydrate] B2: Monoethanolamine (MEA) [Nippon Shokubai Co., Ltd.] B3: Potassium hydroxide (KOH) [Toagosei Co., Ltd., 48% aqueous solution] (Component C) Diethylene glycol monobutyl ether (BDG) [Nippon Nyukazai Co., Ltd.] Triethylene glycol (TEG) [Nippon Shokubai Co., Ltd.] (Component D) Water [Pure water of 1 μS / cm or less produced using a water purification system G-10DSTSET manufactured by Organo Corporation]

[0055] 2. Method for Measuring pH of Stripping Agent Composition The pH of the stripping agent composition at 25°C is a value measured using a pH meter (Toa Dempa Kogyo Co., Ltd., HM-30G), and is the value measured 3 minutes after immersing the electrodes of the pH meter in the stripping agent composition.

[0056] 3. Evaluation of Stripping Compositions [Removal Time Evaluation (Resin Mask Removability)] Using the stripping compositions prepared in Examples 1 to 5 and Comparative Examples 1 to 4, evaluation of resin mask removability was carried out as follows. <Dry Film (DF) Sample for Evaluation> The DF sample for evaluation was a negative dry film resist that had been cured by exposure, and was 2 cm square. <Measurement of Dry Film Resist (DF) Dissolution Time> 50 mL of the stripping composition was added to a 100 mL glass beaker. This was heated to 50°C, and the DF sample was immersed in it. The time until the dissolution of the DF sample was complete was measured visually. The results are shown in Table 1. Note that if dissolution was not complete even after 70 minutes, it was determined to be insoluble.

[0057]

[0058] As shown in Table 1, the stripper compositions of Examples 1 to 5, in which the mass ratio C / A of the organic solvent to hydroxylamine was within the predetermined range and the mass ratio D / A of the water to hydroxylamine was less than 11, were found to have a superior dissolution rate for the dry film resist compared to Comparative Example 1, which did not contain component C, Comparative Examples 2 and 3, in which the mass ratio C / A was not within the predetermined range, and Comparative Example 4, in which the mass ratio D / A was not less than 11.

[0059] According to the present disclosure, a stripper composition that has an excellent dissolution rate for a resin mask and can efficiently remove the resin mask can be provided. Furthermore, by using the stripper composition of the present disclosure, the performance and reliability of manufactured electronic components can be improved, and the productivity of semiconductor devices can be improved.

Claims

1. A stripping composition containing hydroxylamine (component A), an alkaline agent other than component A (component B), an organic solvent other than components A and B (component C), and water (component D), wherein the mass ratio C / A of component C to component A is greater than 2.25 and not more than 50, and the mass ratio D / A of component D to component A is less than 11.

2. The stripping composition according to claim 1, wherein the mass ratio C / A of component C to component A is 2.5 or more.

3. The stripping composition according to claim 1 or 2, wherein the content of component A is 3% by mass or more and 30% by mass or less.

4. The stripping composition according to any one of claims 1 to 3, wherein component B comprises at least one selected from the group consisting of quaternary ammonium hydroxides, alkanolamines, and inorganic metal hydroxides.

5. The stripper composition according to any one of claims 1 to 3, wherein component B comprises an alkanolamine.

6. The stripping composition according to any one of claims 1 to 5, wherein the mass ratio D / A of component D to component A is less than 6.

7. The stripper composition according to any one of claims 1 to 3, wherein component B comprises a quaternary ammonium hydroxide, an alkanolamine, and an inorganic metal hydroxide.

8. The stripping composition according to any one of claims 4 to 7, wherein the mass ratio of hydroxylamine to alkanolamine (hydroxylamine / alkanolamine) is 0.3 or more and 2.0 or less.

9. The stripping composition according to any one of claims 1 to 8, wherein component C comprises an organic solvent having a hydroxyl group.

10. The stripper composition of any one of claims 1 to 9, wherein component C comprises a glycol ether.

11. The stripper composition of any one of claims 1 to 10, wherein component C comprises diethylene glycol monobutyl ether.

12. The stripping composition according to any one of claims 1 to 11, wherein the content of water (component D) is 30 mass % or less.

13. The stripping composition according to any one of claims 1 to 12, wherein the mass ratio C / D of component C to component D is 60 / 40 or more and 100 / 0 or less.

14. The stripper composition according to any one of claims 1 to 13, which is substantially free of dimethyl sulfoxide.

15. A method for stripping a resin mask, comprising the step of stripping the resin mask from a substrate having the resin mask thereon using the stripping composition according to any one of claims 1 to 14.

16. A method for manufacturing electronic components, comprising the resin mask peeling method of claim 15.

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