Ultraviolet light-emitting semiconductor chip and ultraviolet light-emitting semiconductor light-emitting device comprising same

Abstract

The present disclosure relates to an ultraviolet light-emitting semiconductor chip and an ultraviolet light-emitting semiconductor light-emitting device comprising same, the ultraviolet light-emitting semiconductor chip comprising: a light-transmitting substrate; a plurality of semiconductor regions provided on the light-transmitting substrate, comprising a first semiconductor region, a second semiconductor region, and an active region interposed between the first semiconductor region and the second semiconductor region and emitting ultraviolet rays through recombination of electrons and holes, wherein portions of the second semiconductor region, the active region, and the first semiconductor region are removed to form mesa regions; a first electrode provided on the first semiconductor region exposed by removal of portions of the second semiconductor region, the active region, and the first semiconductor region, and electrically connected to the first semiconductor region; and a second electrode electrically connected to the second semiconductor region, wherein the first electrode has a closed loop shape surrounding the mesa regions when viewed from above the first electrode and the second electrode to block moisture and gas.

Description

Ultraviolet emitting semiconductor chip and ultraviolet emitting semiconductor light-emitting device comprising the same

[0001] The present disclosure relates generally to a UV light-emitting semiconductor chip and a semiconductor light-emitting device having the same, and more particularly, to a UV light-emitting semiconductor chip and a semiconductor light-emitting device having the same, which can protect a semiconductor chip from external gases including moisture and air. Here, the UV light-emitting semiconductor chip refers to a semiconductor optical device that generates ultraviolet rays (with a peak emission wavelength of 400 nm or less, particularly 300 nm or less) through recombination of electrons and holes, and may be formed of a III-nitride semiconductor (Al(x)Ga(y)In(1-xy)N(0≤x≤1, 0≤y≤1, 0≤x+y≤1)).

[0002] This section provides background information related to the present disclosure which is not necessarily prior art.

[0003] FIG. 1 is a drawing showing an example of an ultraviolet emitting semiconductor light-emitting device presented in Korean Patent Publication No. 10-2347997, wherein the light-emitting device includes a supporting substrate (100) and an ultraviolet emitting semiconductor chip (20). A via hole (100) and a reflective wall (300) are formed in the supporting substrate (100), and a conductive portion or conductive layer (500) electrically connected to a semiconductor chip (20) is formed in the via hole (100), and a transparent cover (400) is attached to the reflective wall (300) using an adhesive (410). An encapsulating agent (700) is additionally formed within the space formed by the reflective wall (300) and the transparent cover (400), and the encapsulating agent (700) serves to protect the semiconductor chip (20) from gases such as moisture and / or oxygen that may penetrate into the space despite the presence of the transparent cover (400). The unexplained symbol (600) is solder and is used for bonding the support substrate (100) and the semiconductor chip (200).

[0004] FIGS. 2 and 3 are drawings showing an example of a method for manufacturing an ultraviolet emitting semiconductor light-emitting device as disclosed in U.S. Patent Publication No. US11,824,148. As shown in FIG. 2, a semiconductor chip (20) is attached to a support substrate (24), and then a solid lens material (4) made of a thermoplastic resin is placed thereon. Next, as shown in FIG. 3, the lens material (4) is formed into a lens or sealant (22) of a desired shape through thermal curing. Unexplained reference numeral (242) denotes a conductive portion or a conductive layer, and (243) denotes a preventive layer that acts as a stopper for the lens material (4) during the thermal curing process. Through this configuration (i.e., a configuration in which the reflective wall (300) and the transparent cover (400) are omitted, unlike the light-emitting element presented in FIG. 1), it is possible to reduce light loss of about 10 to 15% that occurs in the process in which light generated from a semiconductor chip (20) is emitted to the outside of the light-emitting element through the space between the reflective wall (300) and the cover material (400) and the transparent cover (400; e.g., quartz, sapphire), and also to omit the process of attaching the transparent cover (400) to the reflective wall (300), which is a difficult process.

[0005] However, a more reliable means is required to prevent the penetration of gases such as moisture and / or oxygen into the semiconductor chip (20), which may be fatal to the performance of the semiconductor chip (20).

[0006] This is described in the latter part of ‘Specific details for carrying out the invention’.

[0007] This section provides a general summary of the disclosure and is not a comprehensive disclosure of its full scope or all of its features.

[0008] According to one aspect of the present disclosure, an ultraviolet emitting semiconductor chip is provided, comprising: a light-transmitting substrate; a plurality of semiconductor regions provided on the light-transmitting substrate, the first semiconductor region having a first conductivity; a second semiconductor region having a second conductivity different from the first conductivity; and an active region interposed between the first semiconductor region and the second semiconductor region and emitting ultraviolet ray through recombination of electrons and holes; wherein a plurality of semiconductor regions are formed by removing a portion of the second semiconductor region, the active region, and the first semiconductor region to form a mesa region; a first electrode provided in the first semiconductor region exposed by removing a portion of the second semiconductor region, the active region, and the first semiconductor region, and electrically connected to the first semiconductor region; and a second electrode electrically connected to the second semiconductor region; wherein the first electrode has a closed loop shape when viewed from above the first electrode and the second electrode to surround the mesa region so as to block moisture and gas.

[0009] According to another aspect of the present disclosure, an ultraviolet emitting semiconductor chip is provided, comprising: a light-transmitting substrate; a plurality of semiconductor regions provided on the light-transmitting substrate, wherein the first semiconductor region has a first conductivity; a second semiconductor region has a second conductivity different from the first conductivity; and an active region interposed between the first semiconductor region and the second semiconductor region and emitting ultraviolet ray through recombination of electrons and holes; wherein the plurality of semiconductor regions have a mesa region formed by removing a portion of the second semiconductor region, the active region, and the first semiconductor region; a first electrode provided in the first semiconductor region exposed by removing a portion of the second semiconductor region, the active region, and the first semiconductor region, and electrically connected to the first semiconductor region; a second electrode electrically connected to the second semiconductor region; and a blocking wall having a closed loop shape, the blocking wall surrounding the mesa region at the periphery of the first electrode when the first electrode and the second electrode are viewed from above so as to block moisture and gas.

[0010] According to another aspect of the present disclosure, there is provided an ultraviolet emitting semiconductor light-emitting device including a semiconductor chip according to the present disclosure, the device including: a support substrate coupled to the semiconductor chip, the support substrate having a first electrode and a second electrode coupled to face the support substrate; and the support substrate having a first conductive portion coupled to the first electrode; and a second conductive portion coupled to the second electrode.

[0011] According to another aspect of the present disclosure, an ultraviolet emitting semiconductor chip comprises: a light-transmitting substrate; a plurality of semiconductor regions provided on the light-transmitting substrate, the first semiconductor region having a first conductivity; a second semiconductor region having a second conductivity different from the first conductivity; and an active region interposed between the first semiconductor region and the second semiconductor region and emitting ultraviolet ray through recombination of electrons and holes; wherein the second semiconductor region, the active region, and a portion of the first semiconductor region are removed to form a mesa region; an insulating layer surrounding the mesa region; a first electrode penetrating the insulating layer and electrically communicating with the first semiconductor region, the first electrode having a first bonding layer on the insulating layer; a second electrode penetrating the insulating layer and electrically communicating with the second semiconductor region, the second electrode having a second bonding layer on the insulating layer; An ultraviolet emitting semiconductor chip is provided, wherein one of the first electrode and the second electrode surrounds the other electrode to form a closed loop, and the one electrode forming the closed loop protects an active region that emits ultraviolet rays from moisture and harmful gases together with an insulating layer.

[0012] This is described in the latter part of ‘Specific details for carrying out the invention’.

[0013] Figure 1 is a drawing showing an example of an ultraviolet emitting semiconductor light emitting device presented in Korean Patent Publication No. 10-2347997.

[0014] Figures 2 and 3 are drawings showing an example of a method for manufacturing an ultraviolet emitting semiconductor light emitting device as presented in U.S. Patent Publication No. US11,824,148.

[0015] Figures 4 to 7 are drawings showing an example of an ultraviolet emitting semiconductor chip and a semiconductor light emitting device including the same according to the present disclosure.

[0016] FIG. 8 is a drawing showing another example of an ultraviolet emitting semiconductor chip according to the present disclosure;

[0017] FIG. 9 is a drawing showing another example of an ultraviolet emitting semiconductor chip according to the present disclosure;

[0018] FIG. 10 and FIG. 11 are drawings showing another example of an ultraviolet emitting semiconductor chip according to the present disclosure;

[0019] Figures 12 and 13 are drawings showing another example of a support substrate according to the present disclosure;

[0020] FIG. 14 is a drawing showing another example of a support substrate according to the present disclosure;

[0021] FIG. 15 is a drawing showing another example of an ultraviolet emitting semiconductor chip according to the present disclosure;

[0022] FIG. 16 is a drawing showing another example of an ultraviolet emitting semiconductor chip according to the present disclosure;

[0023] FIG. 17 is a drawing showing another example of an ultraviolet emitting semiconductor chip and a semiconductor light emitting device including the same according to the present disclosure;

[0024] FIG. 18 is a drawing showing another example of an ultraviolet emitting semiconductor chip according to the present disclosure and a semiconductor light emitting device including the same;

[0025] FIG. 19 is a drawing showing another example of an ultraviolet emitting semiconductor chip according to the present disclosure and a semiconductor light emitting device including the same;

[0026] FIG. 20 is a drawing showing another example of an ultraviolet emitting semiconductor chip according to the present disclosure and a semiconductor light emitting device including the same;

[0027] FIGS. 21 to 23 are drawings showing another example of an ultraviolet emitting semiconductor chip according to the present disclosure.

[0028] The present disclosure will now be described in detail with reference to the accompanying drawing(s).

[0029] FIGS. 4 to 7 are drawings showing an example of an ultraviolet emitting semiconductor chip according to the present disclosure and a semiconductor light emitting device including the same. The semiconductor light emitting device includes a semiconductor chip (20) and a supporting substrate or carrier (24), and may further include a lens or sealant (22) as needed. In the presented example, the semiconductor chip (20) and the supporting substrate (24) are separated for convenience of explanation, but in an actual device, they are coupled, and soldering, paste, etc. may be used for this coupling.

[0030] A semiconductor chip (20), as shown in FIG. 5, includes a light-transmitting substrate (1; for example, a growth substrate made of sapphire), a first semiconductor region (2; for example, an n-type III-nitride semiconductor), an active region (3; a quantum well structure made of a III-nitride semiconductor), a second semiconductor region (5; for example, a p-type III-nitride semiconductor), a first electrode (6) in electrical contact with the first semiconductor region (2), and a second electrode (7) in electrical contact with the second semiconductor region (5). The active region (3) is interposed between the first semiconductor region (2) and the second semiconductor region (5) and emits ultraviolet light through recombination of electrons and holes using a current supplied through the first electrode (6) and the second electrode (7). The first electrode (6) is positioned on the first semiconductor region (2a) exposed around the mesa region (M) formed by removing a part of the second semiconductor region (5), the active region (3) and the first semiconductor region (2) through etching, and the second electrode (7) is formed over almost the entire upper surface of the second semiconductor region (5) to act as a reflective film so that light generated in the active region (3) is emitted through the light-transmitting substrate (1). It is common to provide a buffer region (not shown) for the growth of high-quality semiconductor regions (2, 3, 5) between the light-transmitting substrate (1) and the first semiconductor region (2).

[0031] FIG. 6 is a plan view of a semiconductor chip (20) viewed from the side where the electrodes (6, 7) are positioned, in which the first electrode (6) is formed in a closed loop over the first semiconductor region (2), i.e., the exposed first semiconductor region (2a), while surrounding the mesa region (M) at a distance from the mesa region (M). Through this configuration, the mesa region (M) where the active region (3; see FIG. 4) is positioned is completely sealed from the outside while being bonded to the support substrate (24), and therefore, moisture, water, and / or harmful gases (chlorine, sulfur, oxygen, air), etc. from the outside are difficult to infiltrate, so that the semiconductor chip (20) or the semiconductor light-emitting element can operate stably. The first electrode (6) and the second electrode (7) can be formed separately, and a photolithography process and a metal deposition process can be used in each process.

[0032] Returning to FIG. 4, the supporting substrate or carrier (24) has three conductive portions (242a, 242b, 242c) based on the cross-sectional view, and each of the three conductive portions (242a, 242b, 242c) may have an upper pad (242a-1, 242b-1, 242c-1) that is directly connected to the first electrode (6) and the second electrode (7), a lower pad (242a-2, 242b-2, 242c-2) that is connected to an external power source, and a connecting portion (242a-3, 242b-3, 242c-3) that connects them by penetrating the supporting substrate (24), and although not preferred, the upper pad and / or the lower pad may be omitted. In the case where the first electrode (6) has a closed loop shape, two conductive parts (242a, 242b) are formed integrally, and in this case, one of the two connecting parts (242a-3, 242b-3) can be omitted, and the lower pad (242a-2, 242b-2) can be maintained as is, and it is also possible for the lower pad (242a-2 or 242b-2) with the connecting part (242a-3 or 242b-3) omitted to have a form connected to the lower pad (242c-2).

[0033] In addition, by providing a lens or sealant (22), the protection of the semiconductor chip (20) from moisture and gas can be more clearly achieved, and in the case of forming the lens (22) using the technology presented in FIGS. 2 and 3, as presented in FIG. 7, two conductive portions (242a, 242b) bonded to the first electrode (6) are integrally formed to have a closed loop shape (e.g., a hollow circle with a square interior), thereby allowing the lens (22) to function as a stopper during the thermal curing process. Unexplained reference numeral (24-1) is the upper surface of the support substrate (24).

[0034] The first electrode (6) may be formed into a multilayer by combining Ti, Cr, Al, Ni, TiN, W, Pt, Rh, Au, Sn or solder containing Sn (AuSn, AgSn, CuSn, SnAgCu, NiSn, etc.), and the second electrode (7) may be formed into a multilayer by combining ITO, Ti, Cr, Al, Ni, TiN, W, Pt, Rh, Au, Sn or solder containing Sn (AuSn, AgSn, CuSn, SnAgCu, NiSn, etc.). As illustrated in FIG. 15, when the first electrode (6) is configured as a multilayer (e.g., ohmic layer-bonding layer, ohmic layer-barrier layer-bonding layer), the ohmic layer (6-1; indicated by a dotted line) positioned below and in ohmic contact with the first semiconductor region (2, 2a) and the bonding layer (6-2) bonded to the support substrate (25) can be configured separately. At this time, it is sufficient to form only the bonding layer (6-2) in a closed loop shape, and in the presented example, the bonding layer (6-2) is in contact with the first semiconductor region (2, 2a) and covers the entire ohmic layer (6-1).

[0035] FIG. 8 is a drawing showing another example of an ultraviolet emitting semiconductor chip according to the present disclosure, in which a first semiconductor region (2) is removed to expose an upper surface (1a) of a light-transmitting substrate (1), and a first electrode (6) is formed across the exposed first semiconductor region (2a) and the upper surface (1a) of the light-transmitting substrate (1). Through this configuration, the first semiconductor region (2) is prevented from coming into contact with moisture and / or gas, while the bonding of the first electrode (6) with the semiconductor chip (20) is more reliably ensured.

[0036] FIG. 9 is a drawing showing another example of an ultraviolet emitting semiconductor chip according to the present disclosure, wherein, in the process of exposing the first semiconductor region (2a) (the process of forming the mesa region (M; see FIG. 5)), the second semiconductor region (5) and the active region (3) on the edge side of the semiconductor chip (20) are left as is, and a first electrode (6) is formed therein. Through this configuration, the first electrode (6) and the second electrode (7) can be formed in a single process, and it is also easy to match the heights of the first electrode (6) and the second electrode (7).

[0037] FIG. 10 and FIG. 11 are drawings showing another example of an ultraviolet emitting semiconductor chip according to the present disclosure, in which a closed-loop blocking wall (8; Wall) that functions as a penetration barrier is installed in a region (1a) of a light-transmitting substrate (1) that is exposed separately from the first electrode (6). At this time, the first electrode (6) may or may not have a closed-loop shape (see FIG. 11). When the first electrode (6) has a closed-loop shape, the blocking of moisture and / or gas can be more reliably performed. The blocking wall (8) may be electrically isolated from the first electrode (6), or it may be configured otherwise. The blocking wall (8) can be installed through the same process as the first electrode (6), and since it does not function as an electrode, it also has the advantage of being composed only of metal(s) that are effective in blocking moisture and / or gas, unlike the metals that compose the first electrode (6).

[0038] FIGS. 12 and 13 are drawings showing another example of a support substrate according to the present disclosure, wherein the support substrate (24) of FIG. 12 corresponds to the semiconductor chip (20) presented in FIG. 10, and has a closed-loop shape (e.g., an annular ring; see FIG. 13) barrier wall connecting portion (244) formed to be connected to the barrier wall (8). Preferably, the connecting portion (244) is composed of a top pad (244-1), a bottom pad (244-2), and a connecting portion (244-3) that penetrates the support substrate (24) and connects them, thereby improving heat dissipation of the semiconductor chip (20) operating in a closed space. Of course, it can be composed of only the top pad (244-1). The conductive portion (242a) connected to the first electrode (6) is electrically separated from the barrier wall connecting portion (244) and formed within the barrier wall connecting portion (244). When a lens or sealant (22) is provided, the barrier joint (244) also functions as a stopper for the lens material. Even when the semiconductor chip (20) presented in FIGS. 5, 8, and 9, which does not have a barrier joint (8), is used, it is of course possible to use the semiconductor chip (20) as a stopper for the lens or sealant (22) by providing a barrier joint (244) that is electrically isolated from the conductive portion (242a, 242b).

[0039] Fig. 14 is a drawing showing another example of a support substrate according to the present disclosure, in which a support substrate (24) corresponding to the semiconductor chip (20) shown in Fig. 11 is shown. In this case, the conductive portion (242a) coupled with the first electrode (6) does not form a closed loop.

[0040] FIG. 16 is a drawing showing another example of an ultraviolet emitting semiconductor chip according to the present disclosure, in which the first electrode (6) is electrically connected to the first semiconductor region (2, 2a) with an insulating layer (9) interposed between the first electrode (6) and the mesa region (M), and the first electrode (6) extends over the mesa region (M). Similar to the first electrode (6) shown in FIG. 15, the second electrode (7) is provided with an ohmic layer (7-1) and a bonding layer (7-2) separately, and the ohmic layer (7-1) may be formed before or after the formation of the insulating layer (9). In addition, a barrier wall (8; see FIG. 10) may be provided, and the barrier wall (8) may be formed on the exposed sapphire substrate (1a) or the exposed first semiconductor region (2a).

[0041] FIG. 17 is a drawing showing another example of an ultraviolet emitting semiconductor chip according to the present disclosure and a semiconductor light emitting element including the same, in which a conductive portion (242) and a barrier joint portion (244) are formed integrally. The first electrode (6) and the barrier joint portion (8) are joined to the upper pad (242-1, 244-1), and the lower pad (242-2, 244-2) has a form that does not surround the lower pad (242c-2) (i.e., a form that is not a closed loop), thereby providing versatility in electrical connection with a commercial external substrate. The connecting portion (242-3, 244-3) connects the upper pad (242-1, 244-1) and the lower pad (242-2, 244-2), and an explanation of unexplained identical reference numerals is omitted. It goes without saying that the lens (22) may be omitted. It goes without saying that the upper pad (242-1) and the upper pad (244-1) may be formed independently and electrically separated rather than as a single unit.

[0042] FIG. 18 is a drawing showing another example of an ultraviolet emitting semiconductor chip according to the present disclosure. Compared to the example presented in FIG. 16, the positions of the first electrode (6) and the second electrode (7) are switched. That is, the second electrode (7) surrounds the first electrode (6) while forming a closed loop. In the presented example, the first electrode (6) and the second electrode (7) are formed only on the upper portion of the insulating layer (9), and the side surface of the mesa region (M) is protected from moisture and / or harmful gases by the insulating layer (9). An ohmic layer (6-1) and an ohmic layer (7-1) are formed in each of the first semiconductor region (2) and the second semiconductor region (5), and the ohmic layer (6-1) and the bonding layer (6-2) are electrically connected by an electrical connection (6-3) provided in a via hole (6h) formed in an insulating layer (9), and the ohmic layer (7-1) and the bonding layer (7-2) are electrically connected by an electrical connection (7-3) provided in a via hole (7h) formed in the insulating layer (9). The ohmic layer (6-1), the bonding layer (6-2), and the electrical connection (6-3) constitute the first electrode (6), and the ohmic layer (7-1), the bonding layer (7-2), and the electrical connection (7-3) constitute the second electrode (7). The electrical connection (6-3) and the electrical connection (7-3) can be formed in the via hole (6h) and the via hole (7h) respectively during the formation process of the bonding layer (6-2) and the bonding layer (7-3).

[0043] FIG. 19 is a drawing showing another example of an ultraviolet emitting semiconductor chip according to the present disclosure, in which, unlike the example presented in FIG. 18, the second electrode (7), specifically the bonding layer (7-2) of the second electrode (7), extends to the substrate (1). Of course, an ohmic layer (6-1) and / or an ohmic layer (7-1) may be provided.

[0044] FIG. 20 is a drawing showing another example of an ultraviolet emitting semiconductor chip according to the present disclosure, in which a blocking wall (8) is formed in addition to the example presented in FIG. 19.

[0045] FIGS. 21 to 23 are drawings showing another example of an ultraviolet emitting semiconductor chip according to the present disclosure, which has a similar form to the example presented in FIG. 19, but the positions of the first electrode (6) and the second electrode (7) are switched. FIG. 21 is a top view of the device, FIG. 22 is a cross-sectional view taken along the line BB of FIG. 21, and FIG. 23 is a cross-sectional view taken along the line AA of FIG. 21. One or more via holes (6h) are used for electrical connection or communication between the first electrode (6; 6-1, 6-2, 6-3)) and the first semiconductor region (2 (2a)). The mesa region (M) is completely covered with an insulating layer (9) and the first electrode (6; 6-2) and is protected from moisture and gas, and the first electrode (6; 6-2) is not electrically connected to the first semiconductor region (2) outside the mesa region (M). It goes without saying that the outside of the mesa region (M) can have the shape presented in Fig. 16. When the semiconductor chip (20) becomes larger, a branch electrode (6-4) may be provided to ensure smooth current supply into the device. The branch electrode (6-4) refers to an electrode that is narrow and elongated, and may be formed together with the ohmic layer (6-1) of the first electrode (6). In the presented example, the second electrode (7; 7-2) has a circular shape, and the first electrode (6; 6-2) forms a circular hole inside at a distance from the second electrode (7; 7-2), and the branch electrode (6-4) extends from each bonding layer (6ei) located inside, and when viewed from above, the branch electrode (6-4) extends to below the second electrode (7-2). The second electrode (7), like the first electrode (6), is composed of an ohmic layer (7-1), a bonding layer (7-2), and one or more electrical connections (7-3). The ohmic layer (7-1) is formed over almost the entire surface of the mesa region (M) on the second semiconductor region (5), and one or more electrical connections (7-3) electrically connect the ohmic layer (7-1) and the bonding layer (7-2) within a circular hole formed by the first electrode (6; 6-2).It goes without saying that the bonding layer (6eo) provided on the outside of the device may be omitted depending on the size of the semiconductor chip (20). Through this configuration, the device can be protected from moisture and gas through the insulating layer (9) and the first electrode (6; 6-2). It goes without saying that a barrier (8; see Fig. 20) may be additionally provided.

[0046] Below, various embodiments of the present disclosure are described.

[0047] (1) An ultraviolet emitting semiconductor chip comprising: a light-transmitting substrate; a plurality of semiconductor regions provided on the light-transmitting substrate; comprising: a first semiconductor region having a first conductivity; a second semiconductor region having a second conductivity different from the first conductivity; and an active region interposed between the first semiconductor region and the second semiconductor region and emitting ultraviolet ray through recombination of electrons and holes; wherein a plurality of semiconductor regions are formed by removing a portion of the second semiconductor region, the active region, and the first semiconductor region to form a mesa region; a first electrode provided in the first semiconductor region exposed by removing a portion of the second semiconductor region, the active region, and the first semiconductor region, and electrically connected to the first semiconductor region; and a second electrode electrically connected to the second semiconductor region; An ultraviolet emitting semiconductor chip, wherein the first electrode has a closed loop shape when viewed from above, surrounding the mesa region, such that the first electrode blocks moisture and gas.

[0048] (2) An ultraviolet emitting semiconductor chip, wherein a second semiconductor region, an active region, and a portion of a first semiconductor region are removed to expose a light-transmitting substrate, and a first electrode is formed across the exposed light-transmitting substrate and the exposed first semiconductor region.

[0049] (3) An ultraviolet emitting semiconductor chip, wherein a second semiconductor region and a part of an active region are left apart from the mesa region, and a first electrode is formed across the left part and the exposed first semiconductor region.

[0050] (4) An ultraviolet emitting semiconductor chip further comprising a blocking wall having a closed loop shape surrounding the first electrode in a mesa region when viewed from above to block moisture and gas.

[0051] (5) An ultraviolet emitting semiconductor chip, wherein the first electrode includes an ohmic layer in ohmic contact with the first semiconductor region and a bonding layer positioned on top, and the bonding layer has a closed loop shape.

[0052] (6) An ultraviolet emitting semiconductor chip further comprising an insulating layer disposed between a first electrode and a mesa region, wherein the first electrode has a closed loop shape and extends from the insulating layer to the mesa region.

[0053] (7) An ultraviolet emitting semiconductor chip, comprising: a light-transmitting substrate; a plurality of semiconductor regions provided on the light-transmitting substrate; a first semiconductor region having a first conductivity; a second semiconductor region having a second conductivity different from the first conductivity; and an active region interposed between the first semiconductor region and the second semiconductor region and emitting ultraviolet ray through recombination of electrons and holes; a plurality of semiconductor regions in which a mesa region is formed by removing a portion of the second semiconductor region, the active region, and the first semiconductor region; a first electrode provided in the first semiconductor region exposed by removing a portion of the second semiconductor region, the active region, and the first semiconductor region and electrically connected to the first semiconductor region; a second electrode electrically connected to the second semiconductor region; and a blocking wall having a closed loop shape, surrounding the mesa region from the periphery of the first electrode when the first electrode and the second electrode are viewed from above so as to block moisture and gas.

[0054] (8) An ultraviolet emitting semiconductor light-emitting device comprising a semiconductor chip according to the present disclosure, comprising: a support substrate coupled to the semiconductor chip; a support substrate coupled such that a first electrode and a second electrode face the support substrate; and the support substrate having a first conductive portion coupled to the first electrode; and a second conductive portion coupled to the second electrode.

[0055] (9) An ultraviolet emitting semiconductor light emitting element further comprising a lens formed on a supporting substrate while covering a semiconductor chip, wherein the first conductive portion has a perforated shape to function as a stopper providing surface tension during the formation process of the lens.

[0056] (10) An ultraviolet emitting semiconductor light-emitting device, wherein the semiconductor chip comprises a barrier wall having a closed loop shape, positioned on the periphery of the first electrode and surrounding a mesa region when viewed from above, to block moisture and gas, and further comprises a barrier wall coupling portion having a closed loop shape on the periphery of the first conductive portion and coupled to the barrier wall.

[0057] (11) A UV-emitting semiconductor light-emitting element further comprising a lens formed on a support substrate while covering a semiconductor chip, and blocking moisture and gas through a closed-loop shaped blocking wall, a closed-loop shaped blocking wall joint, and a lens whose shape is determined by the blocking wall joint.

[0058] (12) An ultraviolet emitting semiconductor light-emitting device, wherein the semiconductor chip comprises a barrier wall having a closed loop shape, which surrounds a mesa region when viewed from above the first electrode and the second electrode to block moisture and gas, and is positioned on the periphery of the first electrode, and further comprises a barrier wall coupling portion having a closed loop shape on the periphery of the first conductive portion and coupled to the barrier wall, wherein the first conductive portion includes an upper pad provided on the upper surface of the supporting substrate and coupled to the first electrode, a lower pad provided on the lower surface of the supporting substrate, and a connecting portion penetrating through the supporting substrate to connect the upper pad and the lower pad, and the barrier wall coupling portion includes an upper pad provided on the upper surface of the supporting substrate and coupled to the barrier wall, a lower pad provided on the lower surface of the supporting substrate, and a connecting portion penetrating through the supporting substrate to connect the upper pad and the lower pad, wherein the lower pad of the first conductive portion and the lower pad of the barrier wall coupling portion are integrally formed without forming a closed loop.

[0059] (13) An ultraviolet emitting semiconductor light emitting element in which the upper surface pad of the first conductive portion and the upper surface pad of the barrier joint portion are formed integrally to form a closed loop.

[0060] (14) An ultraviolet emitting semiconductor chip comprising: a light-transmitting substrate; a plurality of semiconductor regions provided on the light-transmitting substrate; comprising: a first semiconductor region having a first conductivity; a second semiconductor region having a second conductivity different from the first conductivity; and an active region interposed between the first semiconductor region and the second semiconductor region and emitting ultraviolet light through recombination of electrons and holes; wherein a plurality of semiconductor regions are formed by removing a portion of the second semiconductor region, the active region, and the first semiconductor region to form a mesa region; an insulating layer surrounding the mesa region; a first electrode penetrating the insulating layer and electrically communicating with the first semiconductor region, the first electrode having a first bonding layer on the insulating layer; a second electrode penetrating the insulating layer and electrically communicating with the second semiconductor region, the second electrode having a second bonding layer on the insulating layer; an ultraviolet emitting semiconductor chip wherein one of the first electrode and the second electrode surrounds the other electrode while forming a closed loop, and the one electrode forming the closed loop protects the active region emitting ultraviolet light from moisture and harmful gases together with the insulating layer.

[0061] (15) An ultraviolet emitting semiconductor chip, wherein one electrode forming a closed loop covers an insulating layer on the side of the mesa region.

[0062] (16) An ultraviolet emitting semiconductor chip, wherein the remaining electrodes have an ohmic layer and one or more electrical connections connecting the ohmic layer and the bonding layer, and one electrode forming the perovskite has a hole therein at a distance from the remaining electrodes, and one or more electrical connections are located inside the hole of one electrode forming the perovskite.

[0063] (17) An ultraviolet emitting semiconductor chip, wherein one electrode forming a closed loop has an ohmic layer and a branch electrode extending from the ohmic layer, and the branch electrode extends below the bonding layer of the remaining electrode when viewed from above.

[0064] According to one ultraviolet emitting semiconductor chip and a semiconductor light emitting device including the same according to the present disclosure, the semiconductor chip can be protected from external gases including moisture and air.

[0065] According to another ultraviolet emitting semiconductor chip according to the present disclosure and a semiconductor light emitting device including the same, it is possible to reduce light loss that occurs when ultraviolet rays pass through the space between a reflective wall and a transparent cover and the transparent cover.

[0066] According to another ultraviolet emitting semiconductor chip according to the present disclosure and a semiconductor light emitting device comprising the same, it is possible to smoothly supply current to the device through an ohmic layer, while blocking the inflow of gas and / or moisture using a bonding layer. In other words, it is possible to smoothly supply current to the device despite the functional limitations of the bonding layer.

Claims

1. In ultraviolet emitting semiconductor chips, translucent substrate; A plurality of semiconductor regions provided on a light-transmitting substrate, comprising: a first semiconductor region having a first conductivity; a second semiconductor region having a second conductivity different from the first conductivity; and an active region interposed between the first semiconductor region and the second semiconductor region and emitting ultraviolet light through recombination of electrons and holes; wherein a plurality of semiconductor regions are formed by removing a portion of the second semiconductor region, the active region, and the first semiconductor region to form a mesa region; A first electrode provided in a first semiconductor region exposed by removing a portion of a second semiconductor region, an active region, and a first semiconductor region, and electrically connected to the first semiconductor region; and a second electrode electrically connected to the second semiconductor region; An ultraviolet emitting semiconductor chip having a closed loop shape, with the first electrode and the second electrode surrounding a mesa region when viewed from above so that the first electrode blocks moisture and gas.

2. In claim 1, The second semiconductor region, the active region and a portion of the first semiconductor region are removed to expose the light-transmitting substrate, An ultraviolet emitting semiconductor chip formed across a first electrode and an exposed light-transmitting substrate and an exposed first semiconductor region.

3. In claim 1, A second semiconductor region and part of the active region remain separated from the mesa region. An ultraviolet emitting semiconductor chip, wherein a first electrode is formed across the remaining portion and the exposed first semiconductor region.

4. In claim 1, An ultraviolet emitting semiconductor chip further comprising a barrier wall having a closed loop shape surrounding the first electrode in a mesa region when viewed from above to block moisture and gas.

5. In claim 1, An ultraviolet emitting semiconductor chip, wherein the first electrode includes an ohmic layer in ohmic contact with the first semiconductor region and a bonding layer positioned on top, and the bonding layer has a closed loop shape.

6. In claim 1, Further comprising an insulating layer disposed between the first electrode and the mesa region; An ultraviolet emitting semiconductor chip, wherein the first electrode has a closed loop shape and extends over a mesa region on an insulating layer.

7. In ultraviolet emitting semiconductor chips, translucent substrate; A plurality of semiconductor regions provided on a light-transmitting substrate, comprising: a first semiconductor region having a first conductivity; a second semiconductor region having a second conductivity different from the first conductivity; and an active region interposed between the first semiconductor region and the second semiconductor region and emitting ultraviolet light through recombination of electrons and holes; wherein a plurality of semiconductor regions are formed by removing a portion of the second semiconductor region, the active region, and the first semiconductor region to form a mesa region; A first electrode provided in the first semiconductor region, which is exposed by removing a portion of the second semiconductor region, the active region, and the first semiconductor region, and is electrically connected to the first semiconductor region; A second electrode electrically connected to the second semiconductor region; and An ultraviolet emitting semiconductor chip comprising a barrier wall having a closed loop shape surrounding a mesa region on the periphery of the first electrode when viewed from above, to block moisture and gas.

8. In an ultraviolet emitting semiconductor light emitting device comprising a semiconductor chip of any one of claims 1 to 7, A support substrate coupled to a semiconductor chip, comprising: a support substrate coupled such that a first electrode and a second electrode face the support substrate; An ultraviolet emitting semiconductor light emitting device, comprising: a first conductive portion coupled to a first electrode; and a second conductive portion coupled to a second electrode; 9. In claim 8, Further comprising a lens formed on a supporting substrate while covering a semiconductor chip; The first challenger is an ultraviolet emitting semiconductor light-emitting element having a perovskite shape that functions as a stopper to provide surface tension during the lens forming process.

10. In claim 8, The semiconductor chip has a barrier wall having a closed loop shape, which surrounds the mesa region when viewed from above the first electrode and the second electrode to block moisture and gas, and is located on the periphery of the first electrode. An ultraviolet emitting semiconductor light emitting element further comprising a barrier wall joining portion having a closed loop shape on the outer surface of the first conductive portion and joining with the barrier wall.

11. In claim 10, Further comprising a lens formed on a supporting substrate while covering a semiconductor chip; An ultraviolet emitting semiconductor light-emitting element that blocks moisture and gas through a closed-loop shaped barrier, a closed-loop shaped barrier joint, and a lens whose shape is determined by the barrier joint.

12. In claim 8, The semiconductor chip has a barrier wall having a closed loop shape, which surrounds the mesa region when viewed from above the first electrode and the second electrode to block moisture and gas, and is located on the periphery of the first electrode. It further comprises a barrier joint having a closed loop shape on the outer side of the first challenge section and being coupled with the barrier; The first conductive portion includes an upper pad provided on the upper surface of the support substrate and coupled to the first electrode, a lower pad provided on the lower surface of the support substrate, and a connecting portion that penetrates the support substrate and connects the upper pad and the lower pad. The barrier wall joint includes an upper pad provided on the upper surface of the support substrate and coupled to the barrier wall, a lower pad provided on the lower surface of the support substrate, and a connecting portion that penetrates the support substrate and connects the upper pad and the lower pad. An ultraviolet emitting semiconductor light emitting element in which the lower pad of the first conductive portion and the lower pad of the barrier joint portion are formed integrally without forming a closed loop.

13. In claim 12, An ultraviolet emitting semiconductor light emitting element in which the upper surface pad of the first challenge portion and the upper surface pad of the barrier joint portion are formed integrally to form a closed loop.

14. In ultraviolet emitting semiconductor chips, translucent substrate; A plurality of semiconductor regions provided on a light-transmitting substrate, comprising: a first semiconductor region having a first conductivity; a second semiconductor region having a second conductivity different from the first conductivity; and an active region interposed between the first semiconductor region and the second semiconductor region and emitting ultraviolet light through recombination of electrons and holes; wherein a plurality of semiconductor regions are formed by removing a portion of the second semiconductor region, the active region, and the first semiconductor region to form a mesa region; An insulating layer surrounding the mesa area; A first electrode electrically connected to a first semiconductor region through an insulating layer and having a first bonding layer on the insulating layer; A second electrode electrically connected to a second semiconductor region through an insulating layer and having a second bonding layer on the insulating layer; An ultraviolet emitting semiconductor chip, wherein one of the first electrode and the second electrode surrounds the other electrode to form a closed loop, and the one electrode forming the closed loop protects the active region that emits ultraviolet rays from moisture and harmful gases together with an insulating layer.

15. In claim 14, An ultraviolet-emitting semiconductor chip with one electrode forming a closed loop covering an insulating layer on the side of the mesa region.

16. In claim 15, The remaining electrodes have an ohmic layer and one or more electrical connections connecting the ohmic layer and the bonding layer, One electrode forming the perovskite has a hole inside and is spaced apart from the other electrodes, An ultraviolet emitting semiconductor chip, wherein one or more electrical connections are positioned within a hole of one electrode forming a perovskite.

17. In claim 16, One electrode forming a closed loop comprises an ohmic layer and a branch electrode extending from the ohmic layer, An ultraviolet-emitting semiconductor chip whose branch electrode extends below the bonding layer of the remaining electrodes when viewed from above.

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