Apparatus and method for producing silicon-carbon composite material

Abstract

A method and apparatus for producing silicon-carbon composite particles, which are classified as Geldart Group C, is disclosed. Embodiments may include a transport reactor, which may include a main vessel; a transfer device configured to receive solids including at least one of carbon solids or silicon solids from main vessel; and a reaction chamber configured to: receive solids from transfer device, receive process gas, facilitate a reaction to deposit at least one of carbon or silicon on solids, transfer a reaction gas and the solids to main vessel for transfer of solids to reaction chamber by transfer device, and transfer silicon-carbon composite particles classified as Geldart Group C to main vessel or to a harvest vessel. The transfer device may transfer silicon-carbon composite particles classified as Geldart Group C from the main vessel to an output to harvest the silicon-carbon composite particles.

Description

APPARATUS AND METHOD FOR PRODUCING SILICON-CARBON COMPOSITE MATERIALCROSSREFRENCE TO RELATED APPLICATIONSThe present application claims priority from US Patent Application No. 63 / 657,984, filed June 10, 2024, the entire contents of which are incorporated herein for all purposes by this reference.TECHNICAL FIELD

[0001] The various embodiments of the present invention relate to an apparatus and method for producing silicon-carbon composite material. More specifically, the various embodiments of the present invention described in the present disclosure relate to a new transport reactor for producing silicon-carbon composite material and a new method utilizing the transport reactor for producing silicon-carbon composite material.BACKGROUND

[0002] It is well known that lithium-ion (Li-ion) batteries are used in consumer electronics due to their relatively high energy, densities, light weight, and potential for long lifetimes. Li- ion batteries are needed, particularly for potential applications in low- or zero-emission hybrid-electrical or fully electrical vehicles, energy-efficient cargo ships and locomotives, aerospace, and power grids. Such high-power applications will require electrodes with higher specific capacities than those used in currently existing Li-ion batteries.

[0003] Carbon is one of the primary materials used in Li-ion batteries. Traditional Li-ion batteries are comprised of a graphitic carbon anode and a metal oxide cathode; however, such graphitic anodes typically suffer from low power performance and limited capacity.Therefore, it is well-known that silicon-carbon composite materials are replacing carbon in the anodes of Li-ion batteries. US Patent 11,515,528 provides one of many examples of silicon-carbon composite materials and provides examples of processes for making siliconcarbon composite materials. For example, silicon-carbon composite materials, which have been prepared by pyrolysis, mechanical mixing and milling, or some combination thereof, generally include silicon (Si) particles embedded in or on a dense carbon matrix. However, the large volume changes in the Si particles can be accommodated by carbon only to a limited degree using the processes of US Patent 11,515,528, thus offering only limited stability and capacity enhancements.

[0004] In order to solve the problems of the manufacturing methods of pyrolysis, mechanical mixing and milling, or some combination thereof, the processes by which silicon-carboncomposite materials used for Li-ion battery anodes are made involve the thermal decomposition of a silicon containing gas within the porous structure of a carbon substrate. This has generally been accomplished in tube furnaces, rotary furnaces, fluid bed reactors or centrifugal reactors so that the solid carbon particles and the silicon containing feed gas can be adequately mixed with temperature controlled at a level that promotes decomposition and silicon deposition. For example, US Patent 11,515,528 teaches silicon deposition onto the annealed carbon black in a horizontal tube furnace. Other examples of producing siliconcarbon composite materials include the use of a fluid bed reactor, a static bed reactor, an elevator kiln, a rotary kiln, or a box kiln as taught by US Patent 11 ,611 ,071.

[0005] However, production of the silicon-carbon composite materials using prior art production methods and apparatuses is not optimized for the small particle size of the siliconcarbon composite product which is generally less than or equal to 50 gms (fifty microns) in diameter and classified as Geldart Group C. This causes difficulty in processing because particles of this size (fifty microns or less) are cohesive and difficult to mix creating inconsistencies in the final silicon-carbon composite material having this silicon-carbon composite material size. For example, fluid bed reactors are known to require larger particle sizes to prevent bridging, “rat-holing,” and other forms of diminished mixing performance. Therefore, particle sizes less than or equal to 50 microns in diameter cannot be efficiently processed by fluid bed reactors. In addition, it is desirable to produce a final product of silicon-carbon composite material, which is generally less than 50 microns in diameter and classified as Geldart Group C. This means that technologies which require larger particle sizes also require additional unit operations in the production of silicon-carbon composite materials such as pelletizing, crushing, grinding, and potentially longer and / or secondary7processing; all of which adds additional cost and complexity to the production process. In other examples, tube furnaces and rotary furnaces generally suffer from slow / poor mixing and low ability to transfer heat to the reaction zone resulting in high differential temperature in the reactor. This creates the potential for preferential nucleation of silicon deposition in the bulk gas or on surfaces of the reactor leading to poor gas utilization and maintenance issues leading to reduced operational time. In addition, the high differential temperature and diminished mixing performance in the reactor creates the potential for a lack of uniformity in deposition of silicon on carbon.Accordingly, there is a need for a new reactor that (1) efficiently mixes gas and solids, which are classified as Geldart Group C, (2) has a high degree of thermal uniformity in the reactionspace, (3) can be operated continuously or batchwise with a high degree of reliability, and (4) eliminates the need for additional operations such as pelletizing, grinding, sizing, etc.SUMMARY

[0006] Various embodiments of the present disclosure provide a new transport reactor for producing silicon-carbon composite material and a new method utilizing the transport reactor for producing silicon-carbon composite material.

[0007] According to one or more embodiments, there is provided a transport reactor for producing silicon-carbon composite particles classified as Geldart Group C, the transport reactor may include a main vessel; a transfer device configured to receive solids including at least one of carbon solids classified as Geldart Group C or silicon solids classified as Geldart Group C from the main vessel; and a reaction chamber configured to: receive the solids from the transfer device, receive process gas, facilitate a reaction to deposit at least one of carbon or silicon on the solids, transfer a reaction gas and the solids to the main vessel for transfer of the solids to the reaction chamber by the transfer device, and transfer the silicon-carbon composite particles classified as Geldart Group C to the main vessel or transfer the siliconcarbon composite particles classified as Geldart Group C to a harvest vessel.

[0008] In an aspect, the transfer device is configured to receive the silicon-carbon composite particles classified as Geldart Group C from the main vessel, and the transfer device has an output for transferring the silicon-carbon composite particles classified as Geldart Group C from the main vessel to the output to harvest the silicon-carbon composite particles classified as Geldart Group C.

[0009] In an aspect, the harvest vessel is configured to receive the silicon-carbon composite particles classified as Geldart Group C from the reaction chamber.

[0010] In an aspect, the reaction chamber further comprises a separator configured to separate silicon-carbon composite particles classified as Geldart Group C from the solids; and the harvest vessel is configured to receive the silicon-carbon composite particles classified as Geldart Group C from the separator of the reaction chamber.

[0011] In an aspect, the main vessel includes one or more filters including filter media to separate the solids from the reaction gas.

[0012] In an aspect, the process gas comprises a carrier gas and at least one of silane or hydrocarbon.

[0013] In an aspect, the transfer device is configured to transfer the silicon-carbon composite particles by one or more of vibration, pneumatic agitation, and mechanical agitation, so thatthe solids in the transfer device are flowing to the output of the transfer device; and the transfer device is configured to transfer the solids by one or more of vibration, pneumatic agitation, and mechanical agitation, so that the solids in the transfer device are flowing to the reaction chamber.

[0014] In an aspect, the transfer device comprises one or more of an auger, a vibratory feeder, a rotary valve, a gravity feed, a conveyor belt, a piston, and an eductor.

[0015] In an aspect, the reaction chamber comprises a vertical reaction chamber section having a length, one or more heaters are positioned adjacent to the vertical reaction chamber section to heat the vertical reaction chamber section to facilitate deposition of at least one of silicon or carbon on the solids, and the one or more heaters are positioned adjacent to the vertical reaction chamber section to raise temperature of the gas and solids from a bottom of the vertical reaction chamber section to a top of the vertical reaction chamber section, wherein the temperature at about the top of the vertical reaction chamber section is a predetermined temperature in a range of 400°C to 800°C.

[0016] In an aspect, the reaction chamber comprises a vertical reaction chamber section; and the process gas is fed into the vertical reaction chamber by way a process gas valve, one or more injection points, or both the process valve and one or more injection points to lift and transport solids through the reaction chamber and to mix the solids and process gas to facilitate the silicon or deposition on the solids.

[0017] In an aspect, the reaction chamber comprises a vertical reaction chamber section; and a differential temperature of the vertical reaction chamber section is in a range of 1 °C to 50°C so that the heat is uniformly dispersed to provide uniform deposition of the silicon or carbon on the solids in the vertical reaction chamber section.

[0018] In an aspect, the reaction chamber comprises a vertical reaction chamber section; and the length of the vertical reaction chamber section is based on an amount of heating required to raise the temperature in the vertical reaction chamber section to the predetermined temperature about the top of the vertical reaction chamber section so that the heat is uniformly dispersed to provide uniform deposition of the silicon or the carbon on the solids in the vertical reaction chamber section.

[0019] In an aspect, the reaction chamber comprises a vertical reaction chamber section having a vertical reaction chamber section length, a diagonal reaction chamber return section having a diagonal reaction chamber return section length and a vertical reaction chamber return section having a vertical reaction chamber return section length.

[0020] In an aspect, an angle between the vertical reaction chamber section and the diagonal reaction chamber return section is 45° or less, and an angle between the diagonal reaction chamber return section and the vertical reaction chamber return section is selected based on the angle between the vertical reaction chamber section and the diagonal reaction chamber return section.

[0021] In an aspect, the diagonal reaction chamber return section has a smaller diameter than a diameter of the vertical reaction chamber section to increase the velocity of the gas returning to the main vessel.

[0022] According to one or more embodiments, there is provided a transport reactor for producing silicon-carbon composite particles classified as Geldart Group C, the transport reactor may include a main vessel; a harvest vessel; a transfer device configured to receive solids including at least one of carbon solids classified as Geldart Group C or silicon solids classified as Geldart Group C from the main vessel; a reaction chamber configured to: receive the solids from the transfer device, receive process gas, facilitate a reaction to deposit at least one of carbon or silicon on the solids to produce silicon-carbon composite particles classified as Geldart Group C, transfer a reaction gas and the silicon-carbon composite particles classified as Geldart Group C to the harvest vessel: and a harvest container to receive the silicon-carbon composite particles classified as Geldart Group C from the harvest vessel.

[0023] In an aspect, the harvest vessel may include one or more separation devices to separate the silicon-carbon composite particles from the reaction gas.

[0024] In an aspect, the reaction chamber may include a vertical reaction chamber section; and the process gas may be fed into the vertical reaction chamber by way a process gas valve, one or more injection points, or both the process valve and one or more injection points to lift and transport solids through the reaction chamber and to mix the solids and process gas to facilitate the silicon or deposition on the solids.

[0025] In an aspect, the reaction chamber may include a vertical reaction chamber section having a length, one or more heaters are positioned adjacent to the vertical reaction chamber section to heat the vertical reaction chamber section to facilitate deposition of at least one of silicon or carbon on the solids, and the one or more heaters are positioned adjacent to the vertical reaction chamber section to raise temperature of the gas and solids from a bottom of the vertical reaction chamber section to a top of the vertical reaction chamber section, wherein the temperature at about the top of the vertical reaction chamber section is a predetermined temperature in a range of 400°C to 800°C.

[0026] In an aspect, there may be provided a method of producing silicon-carbon composite particles classified as Geldart Group C using a transport reactor of embodiments, the method including supplying solids including at least one of carbon solids or silicon solids classified as Geldart Group C to the transfer device from the main vessel; supplying the process gas to the reaction chamber; transferring the solids from the transfer device to the reaction chamber; facilitating the reaction within the reaction chamber to deposit at least one of silicon or carbon onto the solids; returning the process gas and the solids from the reaction chamber to the main vessel for subsequent transfer of the solids to the reaction chamber by the transfer device; and outputting the silicon-carbon composite particles from the main vessel through the transfer device to harvest the silicon-carbon composite particles classified as Geldart Group C.BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Advantages and teachings of the present invention will become apparent to those skilled in the art with the benefit of the following detailed description of embodiments and upon reference to the accompanying drawings, in which:FIG. 1 is a schematic diagram illustrating an apparatus for producing a silicon carbon composite material according to an embodiment;FIG. 2 is a flowchart illustrating a method for producing a silicon carbon composite material according to an embodiment;FIG. 3 is a flowchart illustrating a method for producing a silicon carbon composite material according to an embodiment;FIG. 4 is a schematic diagram illustrating an apparatus for continuously depositing particles on solids for producing a silicon carbon composite material according to an embodiment;FIG. 5 is a schematic diagram illustrating an apparatus for continuously depositing particles on solids for producing a silicon carbon composite material according to another embodiment;FIG. 6 is a flowchart illustrating a method for continuously depositing particles on solids for producing a silicon carbon composite material according to an embodiment;FIG.7 is a schematic diagram illustrating an apparatus for continuously depositing particles on solids for producing a silicon carbon composite material according to an embodiment;Figure 8 is a flowchart illustrating a method for continuously depositing particles on solids for producing a silicon carbon composite material according to an embodiment;Figure 9 is a schematic diagram illustrating an apparatus for continuously depositing particles on solids for producing a silicon carbon composite material according to an embodiment;Figure 10 is a flowchart illustrating a method for continuously depositing particles on solids for producing a silicon carbon composite material according to an embodiment; and FIG. 11 is a block diagram of an embodiment of a computer system coupled to an embodiment of a transport reactor to control the transport reactor.

[0028] While embodiments of the present disclosure may be susceptible to various modifications and alternative forms, specific embodiments thereof are shown by way of example in the drawings and will be described in the present disclosure in detail. The drawings may not be to scale. It should be understood, however, that the drawings and detailed description thereto are not intended to limit the present invention to the particular form disclosed, but to the contrary, the intention is to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the present invention as defined by the claims.DETAILED DESCRIPTION

[0029] Reference will now be made in detail to embodiments of the present disclosure, examples of which are illustrated in the accompanying drawings. It is noted that wherever practicable, similar or like reference numbers may be used in the drawings and may indicate similar or like elements.

[0030] The drawings depict embodiments of the present disclosure for purposes of illustration only. One skilled in the art would readily recognize from the following description that alternative embodiments exist without departing from the general principles of the disclosure.

[0031] Throughout this disclosure, the terms approach(es), technique(s), technology(ies), and method(s) are used interchangeably and have the same meaning.

[0032] Throughout this disclosure, the term material and the term materials may be used interchangeably.

[0033] Throughout this disclosure, the term gas may refer to a single gas and / or one or more gases.

[0034] Throughout this disclosure, the term transport reactor and the term riser reactor are used interchangeably.

[0035] Throughout this disclosure, the term silicon-composite particles and the term silicon- composite material are used interchangeably.

[0036] Throughout this disclosure, the term harvest refers to removing solids from the transport reactor described herein and collecting these solids elsewhere. The solids may be collected for purposes that include but are not limited to additional processing, conveying, or packaging or the solids may be collected as a finished silicon-carbon composite.

[0037] FIG. 1 is a schematic diagram illustrating an apparatus for producing a silicon-carbon composite material according to an embodiment. A transport reactor (new riser reactor) 100, which operates in a range of 350°C to 800°C, coupled to gas equipment 160 is shown in Figure 1. Preferably, the transport reactor 100 operates in a range of 400°C to 800°C. The terms transport reactor and riser reactor refer to the same apparatus. The transport reactor 100 shown in Figure 1 may be manufactured using large steel fabrication. The steel may be stainless steel or high nickel alloy steel. A high nickel alloy steel may be a class of steel alloys that contain a high concentration of nickel, typically more than 20%. In some embodiments, the dry weight of the transport reactor 100 may be in the range of 2,000 kilograms to 30,000 kilograms. The gas equipment 160 may be environmental equipment or an off-gas recovery system.

[0038] The transport reactor 100 includes a main vessel 110 including a main body 111 , a main vessel input nozzle 112, a hopper 113, one or more filters 114, and one or more outlets 115. The one or more filters 114 include filter media. The transport reactor 100 further includes a transfer device (transport device) 120 and a reaction chamber (riser chamber) 130. A reaction chamber 130 may also be referred to as a reaction device. Solids such as carbon solids or carbon material may be introduced to the transport reactor 100 through the main vessel input nozzle 112 to the main body 111. The solids have a particle size, which is less than or equal to 50 microns and classified as Geldart Group C. The solids are collected in the hopper 113 from the main body 111 and are slowly transported downwards as a bulk solid before entering a transfer device 120, which is configured to move the solids (solid material) by vibration, pneumatic agitation, mechanical agitation, etc. so that the solids in the transfer device 120 are free flowing. The transfer device 120 moves solids including carbon solids from the hopper 113 to the reaction chamber 130 and is managed precisely in order to create the desired reaction conditions. The hopper 113 enables or permits mass flow of solids to the transfer device 120. For example, the edges or slope of the hopper 113 enable or permit the mass flow of solids to the transfer device 120, so that the solids will efficiently and consistently recirculate through the system over a period of time for batch processing. Forexample, the hopper 113 prevents funnel flow, which is accumulation of solids on the sides of the hopper 113, so that all solids efficiently and consistently recirculate through the system. The hopper 113 in conjunction with the transport device 120 enables mass flow of solids allowing for all solids to experience the same amount of processing time in the reaction chamber 130.

[0039] The main body 111 of the main vessel 110 also receives a mixture of gas and solids from the reaction chamber 130 and separates the solids from the gas, which may be referred to as reaction gas. The gas may be one or more gases. The gas passes through one or more filters 114. Solids from the reaction chamber 130 are trapped on the surface of one or more filters 114. A total filter area or total number of filters 114 is customized for the transport reactor capacity. The gas may be a mixture of nitrogen, hydrogen, silane, acetylene, propylene, hydrocarbons, and other reaction products during the production of silicon-carbon composite particles. The gas may be transferred through one or more pipes or outlets 115 to environmental equipment, which processes the gas to meet environmental requirements before entry into the atmosphere. Alternatively, the gas may be transferred through one or more pipes or outlets 115 to an off-gas recovery system (recycling system) that can recover (recycle) the gas to be reused by the transport reactor 100. Gas equipment 160 in Figure 1 may be environmental equipment or an off-gas recovery system to recover (recycle) the gas to be reused by the transport reactor 100.

[0040] Figure 1 shows an auger (screw) as an example of a transfer device 120. The auger may be referred to as a transfer auger. The screw may be referred to as a transfer screw. The transfer device 120 is a material transfer device or material conveyor device. However, other devices for transferring materials such as carbon solids from the hopper 113 to a reaction chamber 130 may be employed. For example, a vibratory feeder, a rotary valve, a gravity feed, a conveyor belt, a piston, an eductor, etc. may be utilized in place of or in addition to the auger shown in Figure 1. The transfer device 120 transfers materials such as carbon solids at a predetermined rate to the reaction chamber 130, so that only a portion of the solids in the transport reactor 100 are being processed in reaction chamber 130 at any given time. The solids are 50 microns or less and classified as Geldart Group C. This predetermined rate can be fixed at any moment in time, but the predetermined rate can be varied based on the capacity of the transport reactor 100. The range of rates may be from zero to 20,000 kilograms / hour of solids such as carbon solids.

[0041] Figure 1 also shows a process gas nozzle or process gas valve 140 to introduce process gas into a reaction chamber 130. The process gas includes silicon. The process gas may beone or more process gases. The process gas may include a reacting gas and a carrier gas. The process gas may be one or more of silane, hydrogen, and nitrogen. Preferably, the process gas may include (1) silane (which is an example of a reacting gas), and (2) one of hydrogen and nitrogen (which are examples of carrier gases) for the deposition of silicon for production of silicon-carbon composite particles. The process gas may include a reacting gas such as acetylene, propylene, and / or hydrocarbons and a carrier gas such as one of hydrogen and nitrogen for the deposition of carbon for the production of silicon-carbon composite particles. Alternatively, any combination of gases may be present for simultaneous deposition of silicon and carbon for the production of silicon-carbon composite particles. The reaction chamber 130 may also be referred to as a riser chamber or a reaction pipe.

[0042] For example, a process gas such as a silicon containing gas, such as silane (Si Hd and / or another carrier gas, are introduced into this reaction chamber 130 at a velocity sufficient to convey substantially all of the solids introduced by the transfer device 120 through the full length of the reaction chamber 130 eventually returning the particles to the hopper 113. Accordingly, solids are transported the length of the reaction chamber by the process gas. In another example, a process gas including a reacting gas, such as acetylene, propylene, and / or hydrocarbons, and a carrier gas are introduced into this reaction chamber 130 at a velocity sufficient to convey substantially all of the solids introduced by the transfer device 120 through the full length of the reaction chamber 130 eventually returning the particles to the hopper 113. The reaction chamber 130 is actively heated and temperature controlled to create the necessary conditions for silicon deposition and / or for carbon deposition for the production of silicon-carbon composite particles. The temperature in the reaction chamber 130 is between 350°C and 800°C. Preferably, the temperature in the reaction chamber 130 is 400°C to 800°C. As the flow through this reaction chamber 130 is naturally turbulent, the process gas and solids become well mixed, and the heat is uniformly dispersed creating the ideal conditions for consistent and uniform deposition of silicon. The process gas flows at a rate that is sufficient to lift the solids in the reaction chamber 130. The velocity of the gas may be 1 meter / second to 15 meters / second. The solids may include carbon solids at the beginning of a batch process of the carbon solids and may include carbon solids, silicon solids, and carbon solids with silicon and / or carbon deposits during the batch process until the conclusion of the batch process, which provides (produces) silicon-carbon composite particles as silicon-carbon composite material.

[0043] In an alternative embodiment, the reaction chamber 130 may have additional multiple gas injection points to inject process gases into the reaction chamber 130. Examples of gasinjection points are shown in in Figure 7 (multiple gas injection points 732, 734, and 736). Different process gases may be introduced at different gas injection points, which is discussed later with reference to Figure 7.

[0044] Although the reaction chamber (riser chamber) 130 may be formed as one pipe or one device, the reaction chamber 130 can be referred to as having sections including a vertical reaction chamber section (vertical riser chamber section) 132, a diagonal reaction chamber return section (diagonal riser chamber return section) 134, and a vertical reaction chamber return section (vertical riser chamber return section) 136. The vertical reaction chamber section 132 is oriented vertically as shown in Figure 1 and may have a diameter in the range of one inch or larger depending upon the desired velocity of the flow of gas in the vertical reaction chamber section 132. The diagonal reaction chamber return section 134 may have a smaller diameter than the vertical reaction chamber section 132 to increase the velocity of the gas returning to the main body 111 of the main vessel 110. The vertical reaction chamber return section 136 may have a diameter, which is the same as or larger than the vertical reaction chamber section 132. The vertical reaction chamber section 132, the diagonal reaction chamber section 134, and the vertical reaction chamber return section 136 prevent saltation (solids falling out of suspension) based on angles, lengths, and sizes of the sections of the reaction chamber 130.

[0045] The length of the vertical reaction chamber section 132, the length of diagonal reaction chamber return section 134, and the length of the vertical reaction chamber return section 136 can also be varied according to the amount of time needed for mixing the solids and gas. The length of diagonal reaction chamber return section 134, and the length of the vertical reaction chamber return section 136 are varied based in part upon the selected length of the vertical reaction chamber section 132. The reason is that the length of the vertical reaction chamber section 132, by virtue of having power applied from heater 150 to control temperature, affects a reaction between the solids and gas to provide uniformity in the production of silicon-carbon composite material more than the length of the diagonal reaction chamber return section 134 and the length of the vertical reaction chamber return section 135. A residence time and a differential temperature (also referred to as deltaT or AT) of the vertical reaction chamber section 132 also affects the uniformity of the silicon-carbon composite material.

[0046] In an embodiment, one or more heaters 150 are placed along the vertical reaction chamber section 132 to raise the temperature within the vertical reaction chamber section 132, so that the temperature of the gas and solids may rise from the bottom of the vertical reactionchamber section 132 to the top of the vertical reaction chamber section 132. Accordingly, the temperature at the top of the vertical reaction chamber section 132 may be higher than the temperature at the bottom of the vertical reaction chamber section 132. The length of the vertical reaction chamber section 132 can be varied according to the amount of time needed for mixing the solids and gas so that a reaction between the solids and gas takes place to produce a uniformity in the production of silicon-carbon composite material. This amount of time needed for mixing the solids and gas so that the reaction between the solids and gas takes place is called residence time. The length of the vertical reaction chamber section 132 is based in part on the amount of heating required to raise the temperature in the vertical reaction chamber section 132 to a predetermined or desired temperature toward the top of the vertical reaction chamber section 132.

[0047] Moreover, the angle between the vertical reaction chamber section 132 and the diagonal reaction chamber return section 134 as well as the angle between the diagonal reaction chamber return section 134 and the vertical reaction chamber return section 136 can also be varied to encourage free flow of solids and prevent saltation (solids becoming disengaged form the gas flow). However, the angle between the vertical reaction chamber section 132 and the diagonal reaction chamber return section 134 is preferably 45° or less to encourage fee flow of solids and prevent saltation. The angle between the diagonal reaction chamber return section 134 and the vertical reaction chamber return section 136 is selected based on the angle between the vertical reaction chamber section 132 and the diagonal reaction chamber return section 134.

[0048] In addition to the above residence time, the differential temperature (also referred to as deltaT or AT) of the vertical reaction chamber section 132 affects the uniformity in the production of silicon-carbon composite material. A measure for uniformity in a reaction chamber 130 is the differential temperature in the reaction chamber 130. The differential temperature is the difference in temperature between the temperature of the wall of the reaction chamber and the combined solid and gas temperature within the reaction chamber 130 at any position along the reaction chamber 130. Although a reaction between gas and solids can take place in any section of the reaction chamber 130, the vertical reaction chamber section 132 is the section of the reaction chamber 130 where the majority of the reaction between gases and solids takes place. Therefore, the differential temperature is the difference in temperature between the wall of the vertical reaction chamber section 132 and the combined solids and gas (process) temperature within the vertical reaction chamber section 132 at a position along the vertical reaction chamber section 132. This is also referred to aswall to process differential temperature. The actual process temperature (reaction temperature) and the actual wall temperature may be higher at the top of the vertical reaction chamber section 132 than at the bottom of the vertical reaction chamber section 132.However, the wall to process differentia] temperature is generally about the same at any position along the vertical reaction chamber section 132 when heat input is uniform along the length of section 132.

[0049] In addition, the temperature of the wall of the vertical reaction chamber is typically higher than the process temperature (reaction temperature). As the length of the vertical reaction chamber section 132 increases, the differential temperature decreases, which reduces the tendency for process gases to react at the reaction chamber wall surface and promotes reaction with the silicon-carbon composite particles. Thus, increasing the length of the vertical reaction chamber section 132 increases uniformity of the silicon-carbon composite material. Accordingly, embodiments (such as the embodiment in Figure 1 ) minimize the wall to process differential temperature.

[0050] Because the transport reactor 100 shown in Figure 1 is configured to provide a differential temperature of about 10°C and prior art fluid bed reactors provide a differential temperature in the range of 70°, the transport reactor 100 of embodiments not only efficiently mixes gas and solids, which are classified as Geldart Group C, but also provides a high degree of thermal uniformity in the reaction space of the vertical reaction chamber section 132 to provide greater uniformity of the silicon-carbon composite material produced by embodiments of the present disclosure. In addition, the transport reactor 100 produces siliconcarbon composite particles classified as Geldart Group C as silicon-carbon composite material for products such as anodes in Li-ion batteries. The transport reactor 100 can be operated batchwise with a high degree of reliability to produce the silicon-carbon composite particles classified as Geldart Group C as silicon-carbon composite material. As discussed above, Geldart Group C particles are less than or equal to 50 microns in diameter.

[0051] Upon return to the main vessel 110, the bulk of the gas and solids from the reaction chamber 100 will separate as the gas velocities slow. Solids are dropped into the collection hopper 113 where they will recycle through the loop as many times as necessary. Reaction gas flows upwards through one or more filters 114 capable of separating any solids that remain entrained in the gas. Solids accumulated on the filter media of the one or more filters 114 may be periodically removed from the surface of the filter media by back pulsing the filters 114 and these solids may be reintroduced to the bulk of the solids in the hopper 113 through themain body 111 of the main vessel 110. The back pulsing of filters 114 may occur intermittently and does not affect the other operations in the transport reactor 100.

[0052] The carbon initially supplied to the main vessel 110 may be batch processed in the transport reactor 100 to produce the silicon-carbon composite material which comprises silicon-carbon composite particles. Once the batch process is completed, all of the siliconcarbon composite material may be harvested. The transfer device 120 transfers the siliconcarbon composite material stored in the hopper 113 to a product harvest outlet 122 as shown in Figure 1. Accordingly, during batch processing, the transfer device 120 moves solids including the carbon to the reaction chamber 130 in one direction from the hopper 113 to the reaction chamber 130. At the conclusion of batch processing, the transfer device 120 moves the final product silicon-carbon composite material in the opposite direction from the hopper 113 to the product harvest outlet 122 as shown in Figure 1. A product harvest valve 124 may close the product harvest outlet 122 during batch processing, and the harvest valve 124 may be opened after the batch processing is completed so that the transfer device 120 can move the silicon-carbon material to the product harvest outlet 122 and output the silicon-carbon material from the transport reactor 100 through product harvest outlet pipe 125. The particle size for the final product of silicon-carbon composite particles (silicon-carbon composite material) may be generally less than or equal to 50 pm (50 microns) in diameter, and the final product of silicon-carbon composite particles (silicon-carbon composite material) is classified as Geldart Group C.

[0053] FIG. 2 is a flowchart illustrating a method for producing a silicon carbon composite material according to an embodiment using the apparatus in Figure 1 for example. The method shown in Figure 2 is a method for producing silicon-carbon composite particles as silicon-carbon composite material using batch processing. While Figure 2 shows a method for producing silicon-carbon composite particles as silicon-carbon composite material, one or more operations shown in Figure 2 may be performed simultaneously and / or in a different order of operation than shown in Figure 2.

[0054] In operation S200, carbon in solid form (carbon solids or carbon material) is introduced to the transport reactor 100 through the main vessel input nozzle 112 to the main body 111. In operation S205, process gas is supplied to a heated reaction chamber 130. Preferably, the process gas may include (1) a reacting gas such as silane and (2) one of hydrogen and nitrogen (carrier gas) for the deposition of silicon for production of siliconcarbon composite particles. Alternatively, the process gas may include a reacting gas such as acetylene, propylene, and / or hydrocarbons and a carrier gas such as hydrogen and nitrogen forthe deposition of carbon for the production of silicon-carbon composite particles. Alternatively, any combination of gases may be present for simultaneous deposition of silicon and carbon onto solids for the production of silicon-carbon composite particles as long as there is at least one reacting gas and at least one carrier gas. The chemical composition of the process gas supplied to the reaction chamber 130 may depend on whether silicon and / or carbon deposition on solids is being performed. The transport reactor 100 in Figure 1 and the process in Figure 2 can be used to deposit silicon, carbon, or both silicon and carbon. As discussed above, heaters 150 are placed along the vertical reaction chamber section 132 of the reaction chamber 130 to raise the temperature within the vertical reaction chamber section 132, so that the temperature of the process gas and solids may rise from the bottom of the vertical reaction chamber section 132 to the top of the vertical reaction chamber section 132. Operations S200 and S205 may be performed simultaneously or in any order.

[0055] In operation S210, solids such as carbon solids are supplied to the transfer device 120 through a nozzle in the main body 111 of the main vessel 110. In batch processing, initially only carbon solids are supplied to the transfer device 120. Later in the process, once silicon and carbon are deposited on some carbon solids, then both (1) carbon solids and (2) carbon solids with some silicon depositions and / or carbon depositions are supplied to the transfer device 120. Once the batch processing is completed as determined by operation 245 for example, silicon-carbon composite particles are supplied (silicon composite material is supplied) to the transfer device 120 (operation S250).

[0056] In operation S215, solids are transferred to the reaction chamber 130 from the hopper 113 of the main vessel 110 by the transfer device 120. As discussed above, the reaction chamber 130 includes (1) a vertical reaction chamber section 132 (vertical riser chamber section), (2) a diagonal reaction chamber return section (diagonal riser chamber return section) 134, and (3) a vertical reaction chamber return section (vertical riser chamber return section) 136. In operation S220, the solids react with the process gas in the vertical reaction chamber section 132 of the reaction chamber 130 to perform silicon deposition and / or carbon deposition on the solids. A process gas is introduced into this reaction chamber 130 at a velocity sufficient to convey substantially all of the solids introduced by the transfer device 120 through the full length of the reaction chamber 130. As discussed above, the chemical composition of the process gas supplied to the reaction chamber 130 may depend on whether silicon and / or carbon deposition on solids is being performed. In operation S225, solids, the process gas, and / or other reaction products are returned to the main vessel 110 by way of the diagonal reaction chamber return section 134 and the vertical reaction chamber return section136. The solids and the process gas may continue to react in the diagonal reaction chamber return section 134 and the vertical reaction chamber return section 136 because the solids and process gas are heated.

[0057] In operation S230, one or more filters 114 are used to separate solids from all gas in the main vessel 110. All gas in the main vessel 110 is referred to as reaction gas. A small fraction of the particles in the transport reactor 100 will stay entrained in the reaction gas and be carried to the filters 114. Generally, these are the smallest particles in the transport reactor 100. When the reaction gas passes through one or more filters 114, solids entrained in the reaction gas from the reaction chamber 130 are trapped on the surface of one or more filters 114. The filters 114 are back pulsed periodically which serves to shake loose solids that are accumulated on the surface of the filters 114. The solids then fall back into the hopper 113 allowing them to reintegrate with the circulating solids. A total filter area or total number of filters 114 is customized for the transport reactor 100 capacity. The back pulsing of the filters 114 does not interfere with the operations of Figure 2.

[0058] The gas in the main vessel 110 may be a mixture of nitrogen, hydrogen, acetylene, propylene, hydrocarbons, silane, and other reaction products (collectively reaction gas). As discussed above, the chemical composition of the process gas supplied to the reaction chamber 130 by way of one or more valves such as process gas valve 140 may depend on whether silicon and / or carbon deposition on solids is being performed. In operation S235, the reaction gas is transferred through one or more pipes or outlets 115 to environmental equipment, which processes the reaction gas to meet environmental requirements before entry into the atmosphere. Alternatively, the reaction gas is transferred through one or more pipes or outlets 115 to an off-gas recovery system or recycling system that can recover or recycle the process gas from the reaction gas to be reused by the transport reactor 100. Gas equipment 160 shown in Figure 1 refers to equipment for processing gas such as the environmental equipment or the off-gas recovery system (recycling system). Typically, some gas will be recovered and recycled and some gas will be processed for release to the atmosphere.

[0059] In operation S240, additional carbon solids and / or solids returned from the reaction chamber 130 to the main vessel 110 are supplied from the hopper 113 of the main vessel 110 to the transfer device 120. It is understood that one or more of operations 230, 235, and 240 may be performed simultaneously or in any order. In operation S245, it is determined whether the batch processing time has elapsed. This determination may be made by the transport reactor 100 operator or made by a computer system 800 (see Figure 8) coupled (wired and / or wirelessly) to the transport reactor 100. The amount of time for batch processing may be setby a user or operator of the transport reactor 100. If the time has not elapsed, the method may return to operation S215 as shown in Figure 2.

[0060] In various alternative embodiments, it is understood that additional carbon solids or additional process gas may be supplied by operations S200 and / or S205 at various times and conditions during the batch processing. As discussed above, filters 114 may be back pulsed intermittently during the process shown in Figure 2 without interrupting the operation of the transport reactor 100.

[0061] If it is determined that the batch processing time has elapsed in operation S245, then the silicon-carbon composite particles are harvested as silicon-composite material in operation S250. The silicon-carbon composite particles are less than or equal to 50 pms (fifty microns) in diameter and classified as Geldart Group C. The silicon-carbon composite particles may be transferred from the main vessel 110 to the product harvest outlet 122 by the transfer device 120. The harvest valve 124 may be opened after the batch processing is completed so that the transfer device 120 can move the silicon-carbon material to the product harvest outlet 122 and output the silicon-carbon material from the transport reactor 100 through product harvest outlet pipe 125. The silicon-carbon composite material is now available for use in applications such as Li-ion batteries.

[0062] FIG. 3 is a flowchart illustrating a method for producing a silicon carbon composite material according to an embodiment. In the embodiment shown in Figure 3, the transport reactor 100 shown in Figure 1 may also be used to produce a silicon-carbon composite material by depositing carbon and / or silicon onto silicon particles, or by depositing carbon and / or silicon onto silicon particles and / or carbon particles in accordance with the embodiment of Figure 3. The solids including silicon and / or carbon have a particle size of less than or equal to 50 microns and are classified as Geldart Group C.

[0063] In the embodiment of Figure 2, the solids may be introduced into the main body 111 of the main vessel 110 through the input nozzle 112. In another embodiment shown in Figure 3, the solids are not introduced through the input nozzle 112, but are instead generated within the reaction chamber 130 and then introduced into the main body 111, which includes hopper 113.

[0064] In operation S300, process gas is supplied to a heated reaction chamber 130 including the heated vertical reaction chamber section 132 to produce solids. As discussed above, heaters 150 are placed along the vertical reaction chamber section 132 of the reaction chamber 130 to raise the temperature within the vertical reaction chamber section 132, so that the temperature of the process gas and solids may rise from the bottom of the vertical reactionchamber section 132 to the top of the vertical reaction chamber section 132. Preferably, the process gas may include (1) a reacting gas such as silane and (2) one of hydrogen and nitrogen (carrier gas) for the deposition of silicon for production of silicon-carbon composite particles. Alternatively, the process gas may include a reacting gas such as acetylene, propylene, and / or hydrocarbons and a carrier gas such as hydrogen and nitrogen for the deposition of carbon for the production of silicon- carbon composite particles. Alternatively, any combination of gases may be present for simultaneous deposition of silicon and carbon onto solids for the production of silicon-carbon composite particles as long as there is at least one reacting gas and at least one carrier gas. The chemical composition of the process gas supplied to the reaction chamber 130 may depend on whether silicon and / or carbon deposition on solids is being performed.

[0065] For example, a process gas containing at least silane (SiF ) may be introduced into the reaction chamber 130. Silane undergoes a homogenous nucleation via thermal decomposition (SiFLi — > Si(solid) + 2H2(gas)) in the high-temperature environment of the reaction chamber 130 to form silicon particles (silicon powder). In another example, a process gas containing at least hydrocarbons may be introduced into the reaction chamber 130. Hydrocarbons undergo homogenous nucleation via thermal decomposition (C2H2 — > 2C(solid) + H2(gas)) in the high- temperature environment of the reaction chamber 130 to form carbon particles (carbon powder). Both silicon particles and carbon particles may be solids and may be used to produce silicon-carbon composite particles.

[0066] In operation S304, solids produced by operation S300 in the reaction chamber 130 are supplied from the reaction chamber 130 to a hopper 113 in the main vessel 110 in Figure 1. If enough solids are accumulated in hopper 113 in operation S308, the solids accumulated in the hopper 113 are supplied to transfer device 120 in Figure 1 (operation S310). If a predetermined amount of solids or more than a predetermined amount of solids are accumulated in hopper 113 in operation S3O8, the solids accumulated in the hopper 113 are supplied to transfer device 120 in Figure 1. However, if the amount of solids accumulated (collected) is insufficient (below a predetermined amount) in operation S308, then the process returns to operation S300 so that more solids may be accumulated (collected) in hopper 113. When enough solids are accumulated in hopper 113 according to operation S308, then the solids are supplied to transfer device 120 in Figure 1 (Operation S310). Operations S310 through S350 perform the same operations as previously described operations S210 through S250 in Figure 2. Therefore, the above description of operations S210 through S250 of Figure 2 also describes operations S310 through S350 of Figure 3.

[0067] The transport reactor 100 shown in Figure 1 shows a transport reactor 100 that (1) efficiently mixes gas and solids, which are classified as Geldart Group C, (2) has a high degree of thermal uniformity in the reaction space, and (3) can be operated batchwise with a high degree of reliability utilizing methods shown in Figures 2 and 3 and various alternative methods discussed above. In the methods of Figures 2 and 3, solids are transported the length of the reaction chamber 130 by the process gas, and only a portion of the solids in the transport reactor 100 are being processed in the reaction chamber 130 at any given time in order produce silicon-carbon composite particles less than or equal to 50 pms (fifty microns) in diameter and classified as Geldart Group C.

[0068] FIG. 4 is a schematic diagram illustrating an apparatus for continuously depositing particles on solids for producing a silicon carbon composite material according to an embodiment. A transport reactor (new riser reactor) 400, which operates in a range of 350°C to 800°C, coupled to gas equipment 160 is shown in Figure 4. Preferably, the transport reactor operates in a range of 500°C to 700°C. The terms transport reactor and riser reactor refer to the same apparatus. The transport reactor 400 shown in Figure 4 may be manufactured using large steel fabrication. The steel may be stainless steel or high nickel alloy steel. A high nickel alloy steel may be a class of steel alloys that contain a high concentration of nickel, typically more than 20%. In some embodiments, the dry weight of the transport reactor 400 may be in the range of 2,000 kilograms to 30,000 kilograms. The gas equipment 160 may be environmental equipment or an off-gas recovery system.

[0069] The transport reactor 400 includes a main vessel 410 (primary vessel) including a main body 411 , a main vessel input nozzle 412, a hopper 413, one or more filters 414, and one or more outlets 415. The one or more filters 414 include filter media. The transport reactor 400 further includes a transfer device (transport device) 420 and a reaction chamber (riser chamber) 430. Solids such as carbon solids or carbon material may be introduced to the transport reactor 400 through the main vessel input nozzle 412 to the main body 411. The solids have a particle size, which is less than or equal to 50 microns and are classified as Geldart Group C. The solids are collected in the hopper 413 from the main body 411 and are slowly transported downwards as a bulk solid before entering a transfer device 420, which is configured to move the solids (solid material) by vibration, pneumatic agitation, mechanical agitation, etc. so that the solids in the transfer device 420 are free flowing. The transfer device 420 moves solids including carbon solids from the hopper 413 to the reaction chamber 430 and is managed precisely in order to create the desired reaction conditions. The hopper 413 enables or permits mass flow of solids to the transfer device 420. For example, the edgesor slope of the hopper 413 enable or permit the mass flow of solids to the transfer device 420, so that the solids will efficiently and consistently move to the transfer device 420. For example, the hopper 413 prevents funnel flow, which is accumulation of solids on the sides of the hopper 413. The hopper 413 in conjunction with the transport device 420 enables mass flow of solids allowing for all solids to experience the same amount of processing time in the reaction chamber 430.

[0070] Figure 4 shows an auger (screw) as an example of a transfer device 420. The auger may be referred to as a transfer auger. The screw may be referred to as a transfer screw. The transfer device 420 is a material transfer device or material conveyor device. However, other devices for transferring materials such as carbon solids from the hopper 413 to a reaction chamber 430 may be employed. For example, a vibratory feeder, a rotary valve, a gravity feed, a conveyor belt, a piston, an eductor, etc. may be utilized in place of or in addition to the auger shown in Figure 4. The transfer device 420 transfers materials such as carbon solids at a predetermined rate to the reaction chamber 430, so that only a portion of the solids in the transport reactor 400 are being processed in reaction chamber 430 at any given time. The solids are 50 microns or less and classified as Geldart Group C. This predetermined rate can be fixed at any moment in time, but the predetermined rate can be varied based on the capacity of the transport reactor 400. The range of rates may be from zero to 20,000 kilograms / hour of solids such as carbon solids.

[0071] Figure 4 also shows a process gas nozzle or process gas valve 440 to introduce process gas into a reaction chamber 430. The process gas may include silicon. The process gas may be one or more process gases. Similar to the embodiment of Figure 1, the process gas may be one or more of silane, hydrogen, and nitrogen. Preferably, the process gas may include (1) silane (reacting gas) and (2) one of hydrogen and nitrogen (carrier gas) for the deposition of silicon for production of silicon-carbon composite particles. The process gas may include acetylene, propylene, and hydrocarbons (reacting gas) and a carrier gas for the deposition of carbon for the production of silicon-carbon composite particles. Alternatively, any combination of gases may be present for simultaneous deposition of silicon and carbon for the production of silicon-carbon composite particles. The reaction chamber 430 may also be referred to as a riser chamber or a reaction pipe. A process gas, such as silane (SiH4) and / or another carrier gas, are introduced into this reaction chamber 430 at a velocity sufficient to convey substantially all of the solids introduced by the transfer device 420 through the full length of the reaction chamber 430 eventually returning the particles to the hopper 413. The reaction chamber 430 is actively heated and temperature controlled to create the necessaryconditions for silicon deposition and / or carbon deposition. The temperature in the reaction chamber 430 is between 35O°C and 800°C. Preferably, the temperature in the reaction chamber 430 is 400°C to 800°C. As the flow through this reaction chamber 430 is naturally turbulent, the process gas and solids become well mixed, and the heat is uniformly dispersed creating the ideal conditions for consistent and uniform deposition of silicon. The process gas flows at a rate that is sufficient to lift the solids in the reaction chamber 430. The velocity of the gas may be 1 meter / second to 15 meters / second.

[0072] In an alternative embodiment, the reaction chamber 430 may have additional multiple gas injection points to inject process gases into the reaction chamber 430. Examples of gas injection points are shown in in Figure 7 (multiple gas injection points 732, 734, and 736).

[0073] Although the reaction chamber (riser chamber) 430 may be formed as one device or one pipe, the reaction chamber 430 can be referred to as having sections including a vertical reaction chamber section (vertical riser chamber section) 432, an input separation device section 434, a separation device (separator) 435, a vertical output separation device section 436, a diagonal reaction chamber return section (diagonal riser chamber return section) 437, and a vertical reaction chamber return section (vertical riser chamber return section) 438. The vertical reaction chamber section 432, the input separation device section 434, the diagonal reaction chamber return section (diagonal riser chamber return section) 437, and a vertical reaction chamber return section (vertical riser chamber return section) 438 prevent saltation (solids falling out of suspension) based on angles, lengths, and sizes of the sections of the reaction chamber 430. An example of a separation device 435 is a cyclone separator. The separation device 435 separate solids based on the physical properties of solids in the reaction chamber 430. For example, the unfinished silicon-carbon composite material in the reaction chamber 430 may be returned to main vessel 410, and finished silicon-carbon composite material may be directed toward a harvest vessel 480 (secondary vessel) through a harvest vessel input nozzle 482 coupled to the separation device 435. In addition, the vertical reaction chamber section 432 is oriented vertically as shown in Figure 4 and may have a diameter in the range of one inch or larger depending upon the desired velocity of the flow of gas in the vertical reaction chamber section 432.

[0074] The length of the vertical reaction chamber section 432, the length of the input separation device section 434, the length of the vertical output separation device section 436, the length of diagonal reaction chamber return section 437, and the length of the vertical reaction chamber return section 438 can also be varied according to the amount of time needed for mixing the solids and gas. A residence time and a differential temperature (alsoreferred to as deltaT or AT) of the vertical reaction chamber section 432 also affects the uniformity of the silicon-carbon composite material. The angles between the above sections may also be varied to optimize reactions and to encourage free flow of solids and prevent saltation (solids becoming disengaged from the gas flow).

[0075] In an embodiment, one or more heaters 450 are placed along the vertical reaction chamber section 432 to raise the temperature within the vertical reaction chamber section 432, so that the temperature of the gas and solids may rise from the bottom of the vertical reaction chamber section 432 to the top of the vertical reaction chamber section 432. Accordingly, the temperature at the top of the vertical reaction chamber section 432 may be higher than the temperature at the bottom of the vertical reaction chamber section 432. The length of the vertical reaction chamber section 432 can be varied according to the amount of time needed for mixing the solids and gas so that a reaction between the solids and gas takes place to produce a uniformity in the production of silicon-carbon composite material. This amount of time needed for mixing the solids and gas so that the reaction between the solids and gas takes place is called residence time. The length of the vertical reaction chamber section 432 is based in part on the amount of heating required to raise the temperature in the vertical reaction chamber to a predetermined or desired temperature toward the top of the vertical reaction chamber section 432.

[0076] In addition to the above residence time, the differential temperature (also referred to as deltaT or AT) of the vertical reaction chamber section 432 affects the uniformity in the production of silicon-carbon composite material as discussed above with respect to reaction chamber 432. Accordingly, embodiments (such as the embodiment in Figure 3) minimize the wall to process differential temperature.

[0077] Because the transport reactor 400 shown in Figure 4 is configured to provide a differential temperature of about 10°C and prior art fluid bed reactors provide a differential temperature in the range of 70°, the transport reactor 400 of embodiments not only efficiently mixes gas and solids, which are classified as Geldart Group C, but also provides a high degree of thermal uniformity in the reaction space of the vertical reaction chamber section 432 to provide greater uniformity of the silicon-carbon composite material produced by embodiments of the present disclosure. In addition, the transport reactor 400 produces siliconcarbon composite particles classified as Geldart Group C as silicon-carbon composite material for products such as anodes in Li-ion batteries. The transport reactor 400 can also be operated continuously with a high degree of reliability to produce the silicon-carbon composite particles classified as Geldart Group C as silicon-carbon composite material.

[0078] Upon return to the main vessel 410, the bulk of the gas and solids from the reaction chamber 400 will separate as the gas velocities slow. Solids are dropped into the collection hopper 413 where they will recycle through the loop as many times as necessary. Reaction gas flows upwards through one or more filters 414 capable of separating any solids that remain entrained in the gas. The reaction gas flows though one or more outlets to gas equipment 160. Solids accumulated on the filter media of the one or more filters 414 may be periodically removed from the surface of the filter media by back pulsing the filters 414 and these solids may be reintroduced to the bulk of the solids in the hopper 413 through the main body 411 of the main vessel 410. The back pulsing of filters 414 may occur intermittently and does not affect the other operations in the transport reactor 400.

[0079] As shown in Figure 4, the transfer device 420 transfers solids including unfinished silicon-carbon composite material from the hopper 413 to the reaction chamber 430. In addition, as shown in Figure 4, the vertical reaction chamber section 432 includes a separation device 435 to separate solids based on the physical properties of solids in the vertical reaction chamber section 432. For example, the unfinished silicon-carbon composite material in the vertical reaction chamber 432 may be returned to main vessel 410, and finished silicon-carbon composite material may be directed toward a harvest vessel 480 through a harvest vessel input nozzle 482. The harvest vessel 480 may include a main body 481, a harvest vessel input nozzle 482, a harvest hopper 483, and a harvest outlet 485 to output the harvest product silicon-carbon composite material. The harvest vessel 480 may include or be coupled to a harvest valve 486, which may be open during continuous processing to continuously provide the final product of silicon-carbon composite particles (silicon-carbon composite material), which are 50 microns or less in diameter and classified as Geldart Group C. The harvest valve 486 may be coupled to a product harvest outlet pipe 487, which may be part of the harvest vessel. The harvest vessel 480 is a component of transport reactor 400. The silicon-carbon composite material is now available for use in applications such as Li-ion batteries.

[0080] FIG. 5 is a schematic diagram illustrating an apparatus for continuously depositing particles on solids for producing a silicon carbon composite material according to an embodiment. A difference between the embodiment of the transport reactor 400 shown in Figure 4 and the embodiment of the transport reactor 500 shown in Figure 5 is that a reaction chamber return section 538 of reaction chamber 530 is substituted for the vertical reaction chamber return section 438 of reaction chamber 430. Another difference between the embodiment of the transport reactor 400 shown in the embodiment in Figure 3 and the embodiment shown in Figure 5 is that the harvest vessel input nozzle 582 is substituted for theharvest vessel input nozzle 482 in the embodiment shown in Figure 4. Accordingly, in the embodiment shown in Figure 5, the reaction chamber return section 538 delivers gases and solids through the side of the main vessel 410 instead of the top of the main vessel 410. In addition, in the embodiment shown in Figure 5, the harvest vessel input nozzle 582 delivers silicon-composite materials through the side of the harvest vessel 480 instead of the harvest vessel input nozzle 482 delivering silicon-composite materials through the top of the harvest vessel 480 in Figure 4. Accordingly, reference numeral 530 denotes a reaction chamber (reaction device) in Figure 5.

[0081] FIG. 6 is a flowchart illustrating a method for continuously depositing particles on solids for producing a silicon carbon composite material according to an embodiment using the apparatus in Figure 4 or Figure 5 for example. The method shown in Figure 6 is a method for continuously producing silicon-carbon composite particles as silicon-carbon composite material. While Figure 6 shows a method for continuously producing silicon-carbon composite particles as silicon-carbon composite material, one or more operations shown in Figure 6 may be performed simultaneously and / or in a different order of operation than shown in Figure 6.

[0082] In operation S600, carbon in solid form (carbon solids or carbon material) is introduced to the transport reactor 400 or transport reactor 500 through the main vessel input nozzle 412 to the main body 411. Alternatively, the solids are not introduced through the input nozzle 412, but are instead generated within the reaction chamber 430 and then introduced into the main body 411 of the main vessel 410, which includes hopper 413 as in operation S300 of Figure 3. Accordingly, this alternative embodiment would begin with operation 605, which would include the generation of solids. In operation S605, process gas is supplied to a heated reaction chamber 430 or heated reaction chamber 530. Preferably, the process gas may include (1) silane (reacting gas) and (2) one of hydrogen and nitrogen (carrier gas) for the deposition of silicon for production of silicon-carbon composite particles. The process gas may include a reacting gas such as acetylene, propylene, and / or hydrocarbons and a carrier gas such as nitrogen or hydrogen for the deposition of carbon for the production of siliconcarbon composite particles. Alternatively, any combination of gases may be present for simultaneous deposition of silicon and carbon onto solids for the production of silicon-carbon composite particles provided there is at least one reacting gas and at least one carrier gas. As discussed above, heaters 450 are placed along the vertical reaction chamber section 432 of the reaction chamber 430 or heated reaction chamber 530 to raise the temperature within the vertical reaction chamber section 432, so that the temperature of the process gas and solidsmay rise from the bottom of the vertical reaction chamber section 432 to the top of the vertical reaction chamber section 432. Operations S600 and S605 may be performed simultaneously or in any order. In addition, as indicated above, operation S600 is optional and the method or process of Figure 6 may begin with operation S605.

[0083] In operation S610, solids such as carbon solids are supplied to the transfer device 420 through a nozzle in the main body 411 of the main vessel 410. In operation S615, solids are transferred to the reaction chamber 430 or reaction chamber 530 from the hopper 413 of the main vessel 410 by the transfer device 420. As discussed above, the reaction chamber 430 includes (1) a vertical reaction chamber section 432 (vertical riser chamber section), (2) an input separation device section 434, (3) a separation device 435, (4) a vertical output separation device section 436, (5) a diagonal reaction chamber return section (diagonal riser chamber return section) 437, and (6) a vertical reaction chamber return section (vertical riser chamber return section) 438. Alternatively, a rection chamber return section 538 may be substituted for the vertical reaction chamber return section 438 as in reaction chamber 530. In operation S620, the solids react with the process gas in the vertical reaction chamber section 432 of the reaction chamber 430 or reaction chamber 530 to perform silicon deposition and / or carbon deposition on the solids. A process gas including a reacting gas and a carrier gas is introduced into this reaction chamber 430 or reaction chamber 530 at a velocity sufficient to convey substantially all of the solids introduced by the transfer device 420 through the full length of the reaction chamber 430 or reaction chamber 530.

[0084] In operation S625, the transport reactor 400 or transport reactor 500 separates the finished silicon-carbon composite particles from the unfinished solids. For example, a separation device (separator) 435, such as a cyclone separator, may perform this separation. In operation S630, unfinished solids, the process gas, and / or other reaction products are returned to the main vessel 410 by way of the vertical output separation device section 436, diagonal reaction chamber return section 437, and the vertical reaction chamber return section 438 or reaction chamber return section 538. The solids and the process gas may continue to react in the vertical output separation device section 436, the diagonal reaction chamber return section 437 and the vertical reaction chamber return section 438 or reaction chamber return section 538 because the solids and process gas are heated.

[0085] In operation S635, one or more filters 414 are used to separate solids from the reaction gas in the main vessel 410. As discussed above, the reaction gas passes through one or more filters 414. Solids entrained in the reaction gas from the vertical reaction chamber 430 are trapped on the surface of one or more filters 414. A total filter area or total number of filters414 is customized for the transport reactor 400 capacity or the transport reactor 500 capacity. Solids from the reaction chamber 430 or reaction chamber 530 are trapped on the surface of one or more filters 414. A small fraction of the particles in the transport reactor 400 or transport reactor 500 will stay entrained in the process gas and be carried to the filters. Generally, these are the smallest particles in the transport reactor 400 or the transport reactor 500. The filters 414 are back pulsed periodically which serve to shake loose solids that are accumulated on the surface of the filters 414. The solids then fall back into the hopper 413 allowing them to reintegrate with the circulating solids. A total filter area or total number of filters 414 is customized for the transport reactor 400 capacity or transport 500 capacity. The back pulsing of the filters 414 does not interfere with the operations of Figure 6.

[0086] The reaction gas in the main vessel 410 may be a mixture of nitrogen, hydrogen, acetylene, propylene, hydrocarbons, silane, and other reaction products (collectively reaction gas). In operation S640, the reaction gas is transferred through one or more pipes or outlets415 to gas equipment 160, which may process the reaction gas to meet environmental requirements before entry into the atmosphere. Alternatively, the reaction gas is transferred through one or more pipes or outlets 415 to gas equipment 160, which may be an off-gas recovery system or recycling system that can recover or recycle the process gas from the reaction gas to be reused by the transport reactor 400 or transport reaction 500. Gas equipment 160 shown in Figure 4 and Figure 5 refers to equipment for processing gas such as the environmental equipment or the off-gas recovery system (recycling system). Typically, some gas will be recovered and recycled and some gas will be processed for release to the atmosphere.

[0087] In operation S645, unfinished solids in the hopper 413 are supplied to the transfer device 420, and subsequently transferred to the vertical reaction chamber section 432 in operation 615, so that the unfinished solids can react with the process gas in operation S620 until the transport reactor 400 determines that the solids are finished in operation S625. This determination may be made by separation device 435. The separation device 435 guides the finished silicon-carbon composite particles to a harvesting vessel 480 in Figure 4 and Figure 5 in operation S650. Thereafter, the silicon-composite particles may be harvested in operation 665 in the flowchart of Figure 6.

[0088] In an alternative embodiment, the silicon-carbon composite particles may be separated from the gas in the harvesting vessel 480 in operation S655. The gas in the harvest vessel 480 may be a mixture of nitrogen, hydrogen, acetylene, propylene, hydrocarbons, silane, and other reaction products (collectively reaction gas). The reaction gas may flow upwards through oneor more filters capable of separating any solids that remain entrained in the gas in operation S655. These filters may be the same as similar to filters 415 and may be positioned in the harvest vessel 480. In operation S660, the reaction gas flows though one or more outlets to gas equipment such as gas equipment 160. Thereafter, the silicon-composite particles may be harvested in operation S665 in the flowchart of Figure 6.

[0089] As discussed above, the harvest vessel 480 may include a main body 481, a harvest vessel input nozzle 482 or harvest vessel input nozzle 582 for receiving the finished siliconcarbon composite particles, a harvest hopper 483, one or more filters (not shown), and one or more outlets 485 to output gas, and a harvest discharge outlet 486 to output the harvest product silicon-carbon composite material. In operation S665 the finished silicon-carbon composite particles are harvested. The harvest vessel 480 may include or be coupled to a harvest valve 486, which may be open during continuous processing to continuously provide the final product of silicon-carbon composite particles (silicon-carbon composite material) is classified as Geldart Group C. The harvest valve 486 may be coupled to a product harvest outlet pipe 487, which may be part of the harvest vessel. The harvest vessel 480 is a component of transport reactor 400 or the transport reactor 500. The silicon-carbon composite material is now available for use in applications such as Li-ion batteries.

[0090] The transport reactor 400 shown in Figure 4 and the transport reaction 500 shown in Figure 5 show a transport reactor 400 and a transport reactor 500 that (1) efficiently mix gas and solids, which are classified as Geldart Group C, (2) have a high degree of thermal uniformity in the reaction space, and (3) can be operated continuously with a high degree of reliability utilizing a method shown in Figure 6 and various alternative methods discussed above. In the method of Figure 6, solids are transported the length of the reaction chamber 430 or the reaction chamber 530 by the process gas, and only a portion of the solids in the transport reactor 400 or the transport reactor 500 are being processed in the reaction chamber 430 or the reaction chamber 530 at any given time in order produce silicon-carbon composite particles less than or equal to 50 pms (fifty microns) in diameter and classified as Geldart Group C.

[0091] FIG. 7 is a schematic diagram illustrating an apparatus for continuously depositing particles on solids for producing a silicon-carbon composite material according to an embodiment. A transport reactor (new riser reactor) 700, which operates in a range of 350°C to 800°C, coupled to gas equipment 160 is shown in Figure 7. Preferably, the transport reactor operates in a range of 500°C to 700°C. The terms transport reactor and riser reactor refer to the same apparatus. The transport reactor 700 shown in Figure 7 may be manufactured usinglarge steel fabrication. The steel may be stainless steel or high nickel alloy steel. A high nickel alloy steel may be a class of steel alloys that contain a high concentration of nickel, typically more than 20%. In some embodiments, the dry weight of the transport reactor 700 may be in the range of 2,000 kilograms to 30,000 kilograms. The gas equipment 160 may be environmental equipment or an off-gas recovery system.

[0092] The transport reactor 700 includes a main vessel 710 including a main body 711, a main vessel input nozzle 712, and a hopper 713. The transport reactor 700 further includes a transfer device (transport device) 720 and a reaction chamber (riser chamber) 730. Solids such as carbon solids or carbon material may be introduced to the transport reactor 700 through the main vessel input nozzle 712 to the main body 711. The solids have a particle size, which is less than or equal to 50 microns and are classified as Geldart Group C. The solids are collected in the hopper 713 from the main body 711 and are slowly transported downwards as a bulk solid before entering a transfer device 720, which is configured to move the solids (solid material) by vibration, pneumatic agitation, mechanical agitation, etc. so that the solids in the transfer device 720 are free flowing. The transfer device 720 moves solids including carbon solids from the hopper 713 to the reaction chamber 730 and is managed precisely in order to create the desired reaction conditions. The hopper 713 enables or permits mass flow of solids to the transfer device 720. For example, the edges or slope of the hopper 713 enable or permit the mass flow of solids to the transfer device 720. For example, the hopper 713 prevents funnel flow, which is accumulation of solids on the sides of the hopper 713, so that all solids efficiently and consistently circulate through the system. The hopper 713 in conjunction with the transport device 720 enables mass flow of solids allowing for all solids to experience the same amount of processing time in the reaction chamber 730.

[0093] Figure 7 shows an auger (screw) as an example of a transfer device 720. The auger may be referred to as a transfer auger. The screw may be referred to as a transfer screw. The transfer device 720 is a material transfer device or material conveyor device. However, other devices for transferring materials such as carbon solids from the hopper 713 to a reaction chamber 730 may be employed. For example, a vibratory feeder, a rotary valve, a gravity feed, a conveyor belt, a piston, an eductor, etc. may be utilized in place of or in addition to the auger shown in Figure 7. The transfer device 720 transfers materials such as carbon solids at a predetermined rate to the reaction chamber 730. This predetermined rate can be fixed at any moment in time, but the predetermined rate can be varied based on the capacity of the transport reactor 700. The range of rates may be from zero to 20,000 kilograms / hour of solids such as carbon solids.

[0094] Figure 7 also shows a process gas nozzle or process gas valve 740 to introduce process gas into a reaction chamber 730. The process gas may include silicon. The process gas may be one or more process gases. The process gas may be one or more of silane, hydrogen, and nitrogen. Preferably, the process gas may include (1) silane (reacting gas) and (2) one of hydrogen and nitrogen (carrier gas) for the deposition of silicon for production of siliconcarbon composite particles. The process gas may include acetylene, propylene, and / or hydrocarbons (reacting gas) and a carrier gas for the deposition of carbon for the production of silicon-carbon composite particles. Alternatively, any combination of gases may be present for simultaneous deposition of silicon and carbon for the production of silicon-carbon composite particles. The reaction chamber 730 may also be referred to as a riser chamber or a reaction pipe. A process gas, such as silane (SiFU) and / or another carrier gas, are introduced into this reaction chamber 730 at a velocity sufficient to convey substantially all of the solids introduced by the transfer device 720 through the full length of the reaction chamber 730 eventually forwarding the particles to a harvest vessel 780. The reaction chamber 730 is actively heated and temperature controlled to create the necessary conditions for silicon deposition. The temperature in the reaction chamber 730 is between 350°C and 800°C. Preferably, the temperature in the reaction chamber 730 is 500°C to 700°C. As the flow through this reaction chamber 730 is naturally turbulent, the process gas and solids become well mixed, and the heat is uniformly dispersed creating the ideal conditions for consistent and uniform deposition of silicon. The process gas flows at a rate that is sufficient to lift the solids in the reaction chamber 730. The velocity of the gas may be 1 meter / second to 15 meters / second.

[0095] The reaction chamber (riser chamber) 730 may be coupled to a harvest vessel input nozzle 782 or the reaction chamber (riser chamber) 730 may be one pipe including the harvest vessel input nozzle 782. A section of the reaction chamber 730 is oriented vertically as shown in Figure 7 and may have a diameter in the range of one inch or larger depending upon the desired velocity of the flow of gas in the vertical reaction chamber 730. In an embodiment, one or more heaters 750 are placed along the vertical section of the reaction chamber 730 to raise the temperature within the reaction chamber 730, so that the temperature of the gas and solids may rise from the bottom of the reaction chamber 730 to the top of the reaction chamber 730. Accordingly, the temperature at the top of the reaction chamber 730 may be higher than the temperature at the bottom of the reaction chamber 730. The length of the reaction chamber 730 can be varied according to the amount of time needed for mixing the solids and gas so that a reaction between the solids and gas takes place to produce auniformity in the production of silicon-carbon composite material or carbon composite material. This amount of time needed for mixing the solids and gas so that the reaction between the solids and gas takes place is called residence time. The length of the reaction chamber 730 is based in part on the amount of heating required to raise the temperature in the reaction chamber 730 to a predetermined or desired temperature toward the top of the reaction chamber 730.

[0096] In addition, the reaction chamber 730 may have additional multiple gas injection points 732, 734, and 736 to inject process gases into the reaction chamber 730 to increase the deposition rate. Alternatively, the multiple gas injection points 732, 734, and 736 may be substituted for the process gas valve or process gas nozzle 740. Moreover, each of the gas injection points 732, 734, and 736 may receive process gas from the same pipe or one or more of the gas injection points 732, 734, and 736 may receive process gas from different pipes. If one or more of the gas injection points 732, 734, and 736 receive process gas from different pipes, different process gas may be delivered to different gas injection points. The harvest vessel 780 may receive solids from the reaction chamber 730 through a harvest vessel input nozzle 782. The harvest vessel 780 may include a harvest vessel main body 781, a harvest vessel input nozzle 782, a harvest vessel hopper 783, one or more harvest vessel filters 784, and one or more harvest vessel outlets 785 to output gas, and a harvest vessel discharge outlet 786 to output (discharge) silicon-carbon composite particles. The one or more harvest vessel outlets 785 output gas to gas equipment 160. The harvest vessel discharge outlet 786 may discharge the silicon-carbon composite particles to a harvest container 790. The harvest container 790 may have a harvest container outlet 792. The harvest container outlet 792 may be coupled to a harvest valve 794, which may be coupled to a product harvest outlet pipe 796 to harvest the silicon carbon composite material.

[0097] FIG. 8 is a flowchart illustrating a method for depositing particles on solids for producing a silicon carbon composite material according to an embodiment using the apparatus in Figure 7 for example. The method shown in Figure 8 is a method for continuously producing silicon-carbon composite particles as silicon-carbon composite material. While Figure 8 shows a method for producing silicon-carbon composite particles as silicon-carbon composite material, one or more operations shown in Figure 8 may be performed simultaneously and / or in a different order of operation than shown in Figure 8.

[0098] In operation S800, carbon in solid form (carbon solids or carbon material) is introduced to the transport reactor 700 through the main vessel input nozzle 712 to the main body 711 of the main vessel 710. In operation S805, process gas is supplied to a heatedreaction chamber 730 to perform silicon deposition and / or carbon deposition on the solids. A process gas is introduced into this reaction chamber 730 at a velocity sufficient to convey substantially all of the solids introduced by the transfer device 720 through the full length of the reaction chamber 730. As discussed above, heaters 750 are placed along the reaction chamber section 730 of the reaction chamber 730 to raise the temperature within the reaction chamber 730, so that the temperature of the process gas and solids may rise from the bottom of the reaction chamber 730 to the top of the reaction chamber 730. Operations S800 and S805 may be performed simultaneously or in any order.

[0099] In operation S810, solids such as carbon solids are supplied to the transfer device 720 through a nozzle of the hopper 713 in the main body 711 of the main vessel 710. In operation S815, solids are transferred to the reaction chamber 730 from the hopper 713 of the main vessel 710 by the transfer device 720. In operation S820, the solids react with the process gas in the reaction chamber 730 to perform silicon deposition and / or carbon deposition on the solids. In operation, S825, the finished solids of silicon-carbon composite particles move to harvest vessel 780.

[0100] In operation S830, one or more harvest vessel filters 784 may be used to separate solids from all gas in the harvest vessel 780. As discussed above, the gas passes through one or more harvest vessel filters 784. Solids entrained in the process gas from the vertical reaction chamber are trapped on the surface of one or more harvest vessel filters 784. A total filter area or total number of harvest filters 784 is customized for the transport reactor 700 capacity. Solids from the reaction chamber 730 are trapped on the surface of one or more harvest vessel filters 784. A small fraction of the particles in the transport reactor 700 will stay entrained in the process gas and be carried to the harvest vessel filters 784. Generally, these are the smallest particles in the transport reactor 700. The harvest vessel filters 784 are back pulsed periodically which serves to shake loose solids that are accumulated on the surface of the harvest vessel fdters 784. The solids then fall back into the harvest vessel hopper 783. A total filter area or total number of harvest vessel filters 784 is customized for the transport reactor 700 capacity. The back pulsing of the harvest vessel filters 784 does not interfere with the operations of Figure 7.

[0101] The gas in the harvest vessel 780 may be a mixture of nitrogen, hydrogen, acetylene, propylene, hydrocarbons, silane, and other reaction products (collectively reaction gas). In operation S835, the reaction gas is transferred through one or more pipes or harvest vessel outlets 785 to environmental equipment 160, which processes the reaction gas to meet environmental requirements before entry into the atmosphere. Alternatively, the reaction gasis transferred through one or more pipes or harvest vessel outlets 785 to an off-gas recovery system or recycling system that can recover or recycle the process gas from the reaction gas to be reused by the transport reactor 700. Gas equipment 160 shown in Figure 7 refers to equipment for processing gas such as the environmental equipment or the off-gas recovery system (recycling system). Typically, some gas will be recovered and recycled and some gas will be processed for release to the atmosphere.

[0102] In operation S840, the silicon-carbon composite particles are harvested as siliconcarbon composite materials from the harvest vessel output 786 of the harvest vessel hopper 713. The harvested silicon-carbon composite material may be harvested into a harvest container 790. Alternatively, the harvested silicon-carbon composite particles may be output from the harvest container 790 by harvest container outlet 792. Harvest container outlet 792 may be coupled to a harvest outlet valve 794, so that the silicon-carbon composite particles may be output through a product harvest outlet pipe 796 to harvest the silicon carbon composite particles as silicon carbon composite material.

[0103] The transport reactor 700 shown in Figure 7 shows a transport reactor 700 that (1) efficiently mixes gas and solids, which are classified as Geldart Group C, (2) has a high degree of thermal uniformity in the reaction space, and (3) can be operated continuously with a high degree of reliability utilizing a method shown in Figure 8 and various alternative methods discussed above. In the method of Figure 8, solids are transported the length of the reaction chamber 730 by the process gas, and only a portion of the solids in the transport reactor 700 are being processed in the reaction chamber 730 at any given time in order produce silicon-carbon composite particles less than or equal to 50 pms (fifty microns) in diameter and classified as Geldart Group C.

[0104] Figure 9 is a schematic diagram illustrating an apparatus for continuously depositing particles on solids for producing a silicon carbon composite material according to an embodiment. A transport reactor (new riser reactor) 900, which operates in a range of 350°C to 800°C, coupled to gas equipment 160 is shown in Figure 9. Preferably, the transport reactor operates in a range of 500°C to 700°C. The terms transport reactor and riser reactor refer to the same apparatus. The transport reactor 900 shown in Figure 9 may be manufactured using large steel fabrication. The steel may be stainless steel or high nickel alloy steel. A high nickel alloy steel may be a class of steel alloys that contain a high concentration of nickel, typically more than 20%. In some embodiments, the dry weight of the transport reactor 900 may be in the range of 2,000 kilograms to 30,000 kilograms. The gas equipment 160 may be environmental equipment or an off-gas recovery system.

[0105] The transport reactor 900 includes a reaction chamber 930. The reaction chamber 930 may also be referred to as a riser chamber or a reaction pipe. Figure 9 also shows a process gas nozzle or process gas valve 940 to introduce process gas into a reaction chamber 930. The process gas may include silicon. The process gas may be one or more process gases. The process gas may be one or more of silane, hydrogen, and nitrogen. Preferably, the process gas may include (1) silane (reacting gas) and (2) one of hydrogen and nitrogen (carrier gas) for the deposition of silicon for production of silicon-carbon composite particles. The process gas may include acetylene, propylene, and / or hydrocarbons (reacting gas) and a carrier gas for the deposition of carbon for the production of silicon-carbon composite particles.Alternatively, any combination of gases may be present for simultaneous deposition of silicon and carbon for the production of silicon-carbon composite particles.

[0106] For example, a process gas containing at least silane (SiF ) may be introduced into the reaction chamber 930. Silane undergoes a homogenous nucleation via thermal decomposition (SiF — Si(solid) + 2Hz(gas) ) in the high-temperature environment of the reaction chamber 930 to form silicon particles (silicon powder). In another example, a process gas containing at least hydrocarbons may be introduced into the reaction chamber 930. Hydrocarbons undergo a homogenous nucleation via thermal decomposition (C2H2 — > 2C(solid) + H2(gas)) in the high-temperature environment of the reaction chamber 930 to form carbon particles (carbon powder). Both silicon particles and carbon particles may be solids and may be used to produce silicon-carbon composite particles.

[0107] A process gas, such as silane (SiHA and / or another carrier gas, are introduced into this reaction chamber 930 at a velocity sufficient to convey substantially all of the solids through the full length of the reaction chamber 930 eventually forwarding the silicon carbon composite particles to a harvest vessel 980. The reaction chamber 930 is actively heated and temperature controlled to create the necessary conditions for silicon deposition. The temperature in the reaction chamber 930 is between 350°C and 800°C. Preferably, the temperature in the reaction chamber 930 is 500°C to 700°C. As the flow through this reaction chamber 930 is naturally turbulent, the process gas and solids become well mixed, and the heat is uniformly dispersed creating the ideal conditions for consistent and uniform deposition of silicon. The process gas flows at a rate that is sufficient to lift the solids in the reaction chamber 930. The velocity of the gas may be 1 meter / second to 15 meters / second.

[0108] The reaction chamber (riser chamber) 930 may be coupled to a harvest vessel input nozzle 982 or the reaction chamber (riser chamber) 930 may be one pipe including the harvest vessel input nozzle 982. The reaction chamber 930 is oriented vertically as shown in Figure 9and may have a diameter in the range of one inch or larger depending upon the desired velocity of the flow of gas in the reaction chamber 930. In an embodiment, one or more heaters 950 are placed along a vertical section of the reaction chamber 930 to raise the temperature within the reaction chamber 930, so that the temperature of the gas and solids may rise from the bottom of the reaction chamber 930 to the top of the reaction chamber 930. Accordingly, the temperature at the top of the reaction chamber 930 may be higher than the temperature at the bottom of the reaction chamber 930. The length of the reaction chamber 930 can be varied according to the amount of time needed for mixing the solids and gas so that a reaction between the solids and gas takes place to produce a uniformity in the production of silicon-carbon composite material or carbon composite material. This amount of time needed for mixing the solids and gas so that the reaction between the solids and gas takes place is called residence time. The length of the reaction chamber 930 is based in part on the amount of heating required to raise the temperature in the reaction chamber 930 to a predetermined or desired temperature toward the top of the reaction chamber 930.

[0109] In addition, the reaction chamber 930 may have additional multiple gas injection points 932, 934, and 936 to inject process gases into the reaction chamber 930 to increase the deposition rate. Alternatively, the multiple gas injection points 932, 934, and 936 may be substituted for the process gas valve or process gas nozzle 940. Moreover, each of the gas injection points 932, 934, and 936 may receive process gas from the same pipe or one or more of the gas injection points 932, 934, and 936 may receive process gas from different pipes. If one or more of the gas injection points 932, 934, and 936 receive process gas from different pipes, different process gas may be delivered to different gas injection points. The harvest vessel 980 may receive solids from the reaction chamber 930 through a harvest vessel input nozzle 982. The harvest vessel 980 may include a harvest vessel main body 981, a harvest vessel input nozzle 982, a harvest vessel hopper 983, one or more harvest vessel filters 984, and one or more harvest vessel outlets 985 to output gas, and a harvest vessel discharge outlet 986 to output (discharge) silicon-carbon composite particles. The one or more harvest vessel outlets 985 output gas to gas equipment 160. The harvest vessel discharge outlet 986 may discharge the silicon-carbon composite particles to a harvest container 990. The harvest container 990 may have a harvest container outlet 992. The harvest container outlet 992 may be coupled to a harvest valve 994, which may be coupled to a product harvest outlet pipe 996 to harvest the silicon carbon composite material.

[0110] Figure 10 is a flowchart illustrating a method for continuously depositing particles on solids for producing a silicon carbon composite particles as silicon composite material. Inthe embodiment shown in Figure 9, the transport reactor 900 shown in Figure 9 may also be used to produce a silicon-carbon composite material by depositing carbon and / or silicon onto silicon particles, or by depositing carbon and / or silicon onto silicon particles and / or carbon particles in accordance with the embodiment of Figure 9. The solids including silicon and / or carbon have a particle size of less than or equal to 50 microns and are classified as Geldart Group C. While Figure 10 shows a method for producing silicon-carbon composite particles as silicon-carbon composite material, one or more operations shown in Figure 10 may be performed simultaneously and / or in a different order of operation than shown in Figure 10.

[0111] In operation S1000, process gas is supplied to a heated reaction chamber 930 to produce solids. Preferably, the process gas may include (1) a reacting gas such as silane and (2) one of hydrogen and nitrogen (carrier gas) for the deposition of silicon for production of silicon-carbon composite particles. Alternatively, the process gas may include a reacting gas such as acetylene, propylene, and / or hydrocarbons and a carrier gas such as hydrogen and nitrogen for the deposition of carbon for the production of silicon-carbon composite particles. Alternatively, any combination of gases may be present for simultaneous deposition of silicon and carbon onto solids for the production of silicon-carbon composite particles as long as there is at least one reacting gas and at least one carrier gas. The chemical composition of the process gas supplied to the reaction chamber 930 may depend on whether silicon and / or carbon deposition on solids is being performed.

[0112] For example, a process gas containing at least silane (SiFU) may be introduced into the reaction chamber 930. Silane undergoes a homogenous nucleation via thermal decomposition (Si H i — > Si(solid) + 2Ho(gas) ) in the high-temperature environment of the reaction chamber 130 to form silicon particles (silicon powder). In another example, a process gas containing at least hydrocarbons may be introduced into the reaction chamber 130. Hydrocarbons undergo a homogenous nucleation via thermal decomposition (C2H2 — 2C(solid) + H2(gas)) in the high-temperature environment of the reaction chamber 930 to form carbon particles (carbon powder). Both silicon particles and carbon particles may be solids and may be used to produce silicon-carbon composite particles in the reaction chamber 930.

[0113] In operation S1010, the finished solids of silicon-carbon composite particles move to harvest vessel 980. In operation 1020, one or more harvest vessel filters 984 may be used to separate solids from all gas in the harvest vessel 980. As discussed above, the gas, which is reaction gas, passes through one or more harvest vessel filters 984. Solids entrained in the gas from the reaction chamber 930 are trapped on the surface of one or more harvest vessel filters984. A total filter area or total number of harvest filters 984 is customized for the transport reactor 900 capacity. Solids from the reaction chamber 930 are trapped on the surface of one or more harvest vessel filters 984. A small fraction of the particles in the transport reactor 900 will stay entrained in the gas and be carried to the harvest vessel filters 984. Generally, these are the smallest particles in the transport reactor 900. The harvest vessel filters 984 are back pulsed periodically which serves to shake loose solids that are accumulated on the surface of the harvest vessel filters 984. The back pulsing of the harvest vessel filters 984 does not interfere with the operations of Figure 10.

[0114] The reaction gas in the harvest vessel 980 may be a mixture of nitrogen, hydrogen, acetylene, propylene, hydrocarbons, silane, and other reaction products (collectively reaction gas). In operation S 1030, the reaction gas is transferred through one or more pipes or harvest vessel outlets 985 to environmental equipment 160, which processes the reaction gas to meet environmental requirements before entry into the atmosphere. Alternatively, the reaction gas is transferred through one or more pipes or harvest vessel outlets 985 to an off-gas recovery system or recycling system that can recover or recycle the process gas from the reaction gas to be reused by the transport reactor 900. Gas equipment 160 shown in Figure 9 refers to equipment for processing gas such as the environmental equipment or the off-gas recovery system (recycling system). Typically, some gas will be recovered and recycled and some gas will be processed for release to the atmosphere.

[0115] In operation S 1040, the silicon-carbon composite particles are harvested as siliconcarbon composite materials from the harvest vessel output 986 of the harvest vessel 980. The harvested silicon-carbon composite particles may be harvested into a harvest container 990 through harvest vessel output 986. Alternatively, the harvested silicon-carbon composite particles may be output from the harvest container 990 by harvest container outlet 992.Harvest container outlet 992 may be coupled to a harvest outlet valve 994, so that the siliconcarbon composite particles may be output through a product harvest outlet pipe 996 to harvest the silicon carbon composite particles as silicon carbon composite material.

[0116] The transport reactor 900 shown in Figure 9 shows a transport reactor 900 that (1) efficiently mixes gas and solids which are classified as Geldart Group C, (2) has a high degree of thermal uniformity in the reaction space, and (3) can be operated continuously with a high degree of reliability utilizing a method shown in Figure 10 and various alternative methods discussed above. In the method of Figure 10, solids are transported the length of the reaction chamber 930 by the process gas, and only a portion of the solids in the transport reactor 900 are being processed in the reaction chamber 930 at any given time in order produce silicon-carbon composite particles less than or equal to 50 ums (fifty microns) in diameter and classified as Geldart Group C.

[0117] FIG. 11 is a block diagram illustrating a computer system 1100 according to an embodiment. The computer system 1100 controls a transport reactor 1150 to produce siliconcarbon composite materials or carbon. The transport reactor 1150 may be any of the transport reactors shown and described in embodiments including transport reactor 100, transport reactor 400, transport reactor 500, transport reaction 700, and transport reactor 900.

[0118] A user interface 1110 of a computer system 1100 may include, for example, one or more of a keyboard, a mouse, a joystick, a button, a switch, an electronic pen or stylus, a gesture recognition sensor (e.g., to recognize gestures of a user including movements of a body part), an input sound device or voice recognition sensor (e.g., a microphone to receive a voice command), an output sound device (e.g., a speaker), a track ball, a remote controller, a portable (e.g., a cellular or smart) phone, a tablet PC, a pedal or footswitch, a virtual-reality device, and so on. The user interface 1110 may further include a haptic device to provide haptic feedback to a user. The user interface 1110 may also include a touchscreen, for example. In addition, the computer system 1100 may be a personal computer, which may be a desktop, a laptop, a tablet, a mobile phone or any other personal computing system. The computer system may include one or more memories 1120 and one or more processors 1130 to execute instructions stored in one or more memories 1120. In addition, the computer system 1100 includes a computer system communication device 1140 to communicate with a transport reactor communication device 1160 through a wire or wirelessly.

[0119] Processes, functions, methods, and / or computer software instructions or programs in apparatuses and methods described in embodiments herein may be recorded, stored, or fixed in one or more non- transitory computer-readable media (computer readable storage (recording) media) that includes program instructions (computer readable instructions) to be implemented by a computer to cause one or more processors to execute (perform or implement) the program instructions. The media may also include, alone or in combination with the program instructions, data files, data structures, and the like. The media and program instructions may be those specially designed and constructed, or they may be of the kind well- known and available to those having skill in the computer software arts. Examples of non- transitory computer-readable media include magnetic media, such as hard disks, floppy disks, and magnetic tape; optical media such as CD ROM disks and DVDs; magneto-optical media, such as optical disks; and hardware devices that are specially configured to store and perform program instructions, such as read-only memory (ROM), random access memory (RAM),flash memory, and the like. Examples of program instructions include machine code, such as produced by a compiler, and files containing higher level code that may be executed by the computer using an interpreter. The program instructions may be executed by one or more processors. The described hardware devices may be configured to act as one or more software modules that are recorded, stored, or fixed in one or more non-transitory computer-readable media, in order to perform the operations and methods described above, or vice versa. In addition, a non-transitory computer-readable medium may be distributed among computer systems connected through a network and program instructions may be stored and executed in a decentralized manner. In addition, the computer-readable media may also be embodied in at least one application specific integrated circuit (ASIC) or Field Programmable Gate Array (FPGA).

[0120] While embodiments of this disclosure have been shown and described, further modifications and alternative embodiments of various aspects of the invention will be apparent to those skilled in the art in view of this description. Accordingly, this description is to be construed as illustrative only and is for the purpose of teaching those skilled in the art the general manner of carrying out the invention. It is to be understood that the forms of the invention shown and described herein are taken as examples of embodiments. Elements and materials may be substituted for those illustrated or described herein, parts and processes may be reversed, and certain features of the invention may be utilized independently, all as would be apparent to one skilled in the art having the benefit of this description of the invention. Changes may be made in the elements described herein without departing from the spirit and scope of the invention as described in the following claims.

Claims

What is claimed is:

1. A transport reactor for producing silicon-carbon composite particles classified as Geldart Group C, the transport reactor comprising: a main vessel; a transfer device configured to receive solids including at least one of carbon solids classified as Geldart Group C or silicon solids classified as Geldart Group C from the main vessel; and a reaction chamber configured to: receive the solids from the transfer device, receive process gas, facilitate a reaction to deposit at least one of carbon or silicon on the solids, transfer a reaction gas and the solids to the main vessel for transfer of the solids to the reaction chamber by the transfer device, and transfer the silicon-carbon composite particles classified as Geldart Group C to the main vessel or transfer the silicon-carbon composite particles classified as Geldart Group C to a harvest vessel.

2. The transport reactor of claim 1, wherein: the transfer device is configured to receive the silicon-carbon composite particles classified as Geldart Group C from the main vessel, and the transfer device has an output for transferring the silicon-carbon composite particles classified as Geldart Group C from the main vessel to the output to harvest the silicon-carbon composite particles classified as Geldart Group C.

3. The transport reactor of claim 1, wherein the harvest vessel is configured to receive the silicon-carbon composite particles classified as Geldart Group C from the reaction chamber.

4. The transport reactor of claim 1, wherein: the reaction chamber further comprises a separator configured to separate siliconcarbon composite particles classified as Geldart Group C from the solids; and the harvest vessel is configured to receive the silicon-carbon composite particles classified as Geldart Group C from the separator of the reaction chamber.

5. The transport reactor of claim 1, wherein the main vessel includes one or more filters including filter media to separate the solids from the reaction gas.

6. The transport reactor of claim 1 , wherein the process gas comprises a carrier gas and at least one of silane or hydrocarbon.

7. The transport reactor of claim 1, wherein: the transfer device is configured to transfer the silicon-carbon composite particles by one or more of vibration, pneumatic agitation, and mechanical agitation, so that the solids in the transfer device are flowing to the output of the transfer device; and the transfer device is configured to transfer the solids by one or more of vibration, pneumatic agitation, and mechanical agitation, so that the solids in the transfer device are flowing to the reaction chamber.

8. The transport reactor of claim 1, wherein the transfer device comprises one or more of an auger, a vibratory feeder, a rotary valve, a gravity feed, a conveyor belt, a piston, and an eductor.

9. The transport reactor of claim 1, wherein: the reaction chamber comprises a vertical reaction chamber section having a length, one or more heaters are positioned adjacent to the vertical reaction chamber section to heat the vertical reaction chamber section to facilitate deposition of at least one of silicon or carbon on the solids, and the one or more heaters are positioned adjacent to the vertical reaction chamber section to raise temperature of the gas and solids from a bottom of the vertical reaction chamber section to a top of the vertical reaction chamber section, wherein the temperature at about the top of the vertical reaction chamber section is a predetermined temperature in a range of 400°C to 800°C.

10. The transport reactor of claim 1, wherein: the reaction chamber comprises a vertical reaction chamber section; andthe process gas is fed into the vertical reaction chamber by way a process gas valve, one or more injection points, or both the process valve and one or more injection points to lift and transport solids through the reaction chamber and to mix the solids and process gas to facilitate the silicon or deposition on the solids.

11. The transport reactor of claim 1 , wherein: the reaction chamber comprises a vertical reaction chamber section; and a differential temperature of the vertical reaction chamber section is in a range of 1 °C to 50°C so that the heat is uniformly dispersed to provide uniform deposition of the silicon or carbon on the solids in the vertical reaction chamber section.

12. The transport reactor of claim 1, wherein the reaction chamber comprises a vertical reaction chamber section; and the length of the vertical reaction chamber section is based on an amount of heating required to raise the temperature in the vertical reaction chamber section to the predetermined temperature about the top of the vertical reaction chamber section so that the heat is uniformly dispersed to provide uniform deposition of the silicon or the carbon on the solids in the vertical reaction chamber section13. The transport reactor of claim 1, wherein the reaction chamber comprises a vertical reaction chamber section having a vertical reaction chamber section length, a diagonal reaction chamber return section having a diagonal reaction chamber return section length and a vertical reaction chamber return section having a vertical reaction chamber return section length.

14. The transport reactor of claim 13, wherein an angle between the vertical reaction chamber section and the diagonal reaction chamber return section is 45° or less, and an angle between the diagonal reaction chamber return section and the vertical reaction chamber return section is selected based on the angle between the vertical reaction chamber section and the diagonal reaction chamber return section.

15. The transport reactor of claim 13, wherein the diagonal reaction chamber return section has a smaller diameter than a diameter of the vertical reaction chamber section to increase the velocity of the gas returning to the main vessel.

16. A transport reactor for producing silicon-carbon composite particles classified as Geldart Group C, the transport reactor comprising: a main vessel; a harvest vessel; a transfer device configured to receive solids including at least one of carbon solids classified as Geldart Group C or silicon solids classified as Geldart Group C from the main vessel; a reaction chamber configured to: receive the solids from the transfer device, receive process gas, facilitate a reaction to deposit at least one of carbon or silicon on the solids to produce silicon-carbon composite particles classified as Geldart Group C, transfer a reaction gas and the silicon-carbon composite particles classified as Geldart Group C to the harvest vessel; and a harvest container to receive the silicon-carbon composite particles classified as Geldart Group C from the harvest vessel.

17. The transport reactor of claim 16, wherein the harvest vessel includes one or more separation devices to separate the silicon-carbon composite particles from the reaction gas.

18. The transport reactor of claim 16, wherein: the reaction chamber comprises a vertical reaction chamber section; and the process gas is fed into the vertical reaction chamber by way a process gas valve, one or more injection points, or both the process valve and one or more injection points to lift and transport solids through the reaction chamber and to mix the solids and process gas to facilitate the silicon or deposition on the solids.

19. The transport reactor of claim 16, wherein. the reaction chamber comprises a vertical reaction chamber section having a length, one or more heaters are positioned adjacent to the vertical reaction chamber section to heat the vertical reaction chamber section to facilitate deposition of at least one of silicon or carbon on the solids, andthe one or more heaters are positioned adjacent to the vertical reaction chamber section to raise temperature of the gas and solids from a bottom of the vertical reaction chamber section to a top of the vertical reaction chamber section, wherein the temperature at about the top of the vertical reaction chamber section is a predetermined temperature in a range of 400°C to 800°C.

20. A method of producing silicon-carbon composite particles classified as Geldart Group C using the transport reactor of claim 1, the method comprising: supplying solids including at least one of carbon solids or silicon solids classified as Geldart Group C to the transfer device from the main vessel; supplying the process gas to the reaction chamber; transferring the solids from the transfer device to the reaction chamber; facilitating the reaction within the reaction chamber to deposit at least one of silicon or carbon onto the solids; returning the process gas and the solids from the reaction chamber to the main vessel for subsequent transfer of the solids to the reaction chamber by the transfer device; and outputting the silicon-carbon composite particles from the main vessel through the transfer device to harvest the silicon-carbon composite particles classified as Geldart Group C.

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