Phase change switch and electronic device

Abstract

Embodiments of the present application relate to the technical field of phase change switches, and provide a phase change switch and an electronic device. The phase change switch comprises a first heating electrode layer, a first thermal conduction layer, a phase change layer, a second thermal conduction layer, and a second heating electrode layer arranged in a first direction. The orthographic projections of any two of the first heating electrode layer, the first thermal conduction layer, the phase change layer, the second thermal conduction layer, and the second heating electrode layer in the first direction overlap. The first heating electrode layer is electrically connected to the second heating electrode layer, the first heating electrode layer comprises a first space running through the first heating electrode layer in the first direction, the second heating electrode layer comprises a second space running through the second heating electrode layer in the first direction, and the orthographic projection of the phase change layer in the first direction overlaps with the orthographic projection of either the first space or the second space in the first direction. Such a configuration improves the heating efficiency of the phase change layer, thereby increasing the power capacity of the phase change switch.

Description

Phase change switch and electronic device

[0001] The present application claims priority to the Chinese patent application No. 202410793199.1, filed on June 18, 2024, and entitled "Phase change switch and electronic device", the content of which is incorporated herein by reference in its entirety. TECHNICAL FIELD

[0002] Embodiments of the present application relate to the technical field of phase change switches, and in particular to a phase change switch and an electronic device. BACKGROUND

[0003] The phase change switch is a kind of switch device formed based on a phase change material (PCM), which has excellent characteristics of low insertion loss, high isolation, ultra-wide working frequency, high on / off ratio, small size, low parasitic capacitance and low power consumption.

[0004] In the related art, the phase change switch includes a substrate layer, an insulating layer, a heating electrode layer, a heat conduction layer, a phase change material layer and a radio frequency electrode layer. The insulating layer is located between the substrate layer and the heating electrode layer and between the substrate layer and the heat conduction layer. The heat conduction layer is located between the phase change material layer and the heating electrode layer. The radio frequency electrode layer is electrically connected with the phase change material layer. The phase change material layer is heated by controlling the heating electrode layer to generate heat, so that the performance of the phase change material changes, and the function of the switch device is realized.

[0005] However, the heating efficiency of the heating electrode layer in the related art is low, resulting in low power capacity of the phase change switch. SUMMARY

[0006] Embodiments of the present application provide a phase change switch and an electronic device, which can improve the low power capacity of the phase change switch.

[0007] The first aspect of the present application provides a phase change switch, which includes a first heating electrode layer, a first heat conduction layer, a phase change layer, a second heat conduction layer and a second heating electrode layer arranged along a first direction. The orthogonal projection of any two of the first heating electrode layer, the first heat conduction layer, the phase change layer, the second heat conduction layer and the second heating electrode layer in the first direction overlaps. The first heating electrode layer is electrically connected with the second heating electrode layer. The first heating electrode layer includes a first space penetrating through the first heating electrode layer along the first direction. The second heating electrode layer includes a second space penetrating through the second heating electrode layer along the first direction. The orthogonal projection of the phase change layer in the first direction overlaps with the orthogonal projection of any one of the first space and the second space in the first direction.

[0008] The phase change switch provided by the embodiments of the present application can simultaneously heat the opposite sides of the phase change layer by arranging the first heating electrode layer and the second heating electrode layer on the opposite sides of the phase change layer, so that the phase change layer can reach the phase change temperature faster. Meanwhile, the first space penetrating the first heating electrode layer and the second space penetrating the second heating electrode layer are arranged, so that the resistance values of the portions of the first heating electrode layer and the second heating electrode layer opposite to the phase change layer in the first direction increase, the partial pressure of the portions of the first heating electrode layer and the second heating electrode layer opposite to the phase change layer can be increased, so as to further improve the heating speed of the first heating electrode layer and the second heating electrode layer, so that the phase change layer quickly reaches the phase change temperature. Therefore, the phase change switch provided by the embodiments of the present application improves the heating efficiency of the phase change layer, so as to increase the volume and / or thickness of the phase change layer, and further improve the power capacity of the phase change switch.

[0009] In a possible implementation, the first space does not overlap with the second space in the first direction.

[0010] In this way, the phase change layer does not have a region opposite to the first space or the second space in the first direction, and the phase change layer can be heated by the first heating electrode layer or the second heating electrode layer, so as to improve the heating efficiency of the phase change layer.

[0011] In a possible implementation, the area of the region of the first heating electrode layer opposite to the phase change layer in the first direction is greater than the area of the region of the second heating electrode layer opposite to the phase change layer in the first direction.

[0012] In this way, on the one hand, the heating efficiency of the phase change layer can be improved, and on the other hand, the heat dissipation efficiency of the phase change switch can be improved.

[0013] In a possible implementation, the first heating electrode layer includes a plurality of first strip segments arranged at intervals in the second direction, the second heating electrode layer includes a plurality of second strip segments arranged at intervals in the second direction, the first strip segments and the second strip segments are alternately arranged in the second direction, there is a first space between adjacent two first strip segments, and there is a second space between adjacent two second strip segments. The first direction is perpendicular to the second direction.

[0014] In this way, the resistance values of the first heating electrode layer and the second heating electrode layer increase, the partial pressure of the first heating electrode layer and the second heating electrode layer increases, and the heating efficiency is improved. In addition, the first strip segments and the second strip segments are alternately arranged, so as to further improve the heating efficiency of the phase change layer.

[0015] In a possible implementation, the phase change switch further includes two inductive elements, the two inductive elements are located on opposite sides of the phase change layer, and each inductive element is electrically connected to any one of the first heating electrode layer and the second heating electrode layer.

[0016] In this way, the parasitic capacitance effect of the phase change switch can be reduced, and thus the quality factor of the phase change switch can be improved.

[0017] In a possible implementation, the phase change switch further includes two integrated inductors, each integrated inductor includes an inductive element and a part of one of the first heating electrode layer and the second heating electrode layer that is electrically connected to the inductive element, and the inductive element is a wire-wound inductor.

[0018] In this way, the integrated inductor is formed by the wire-wound inductor and the part of one of the first heating electrode layer and the second heating electrode layer, the parasitic capacitance effect of the phase change switch can be reduced, and thus the quality factor of the phase change switch can be improved.

[0019] In a possible implementation, the phase change switch further includes a substrate layer and an insulating layer, a part of the insulating layer is located between the substrate layer and the first heat-conducting layer in the first direction, and another part of the insulating layer is located between the substrate layer and the first heating electrode layer in the first direction.

[0020] In this way, the requirement that the phase change material can be converted between the low-resistance crystalline state and the high-resistance amorphous state can be met.

[0021] In a possible implementation, the substrate layer includes a support layer and a trap-rich layer, the trap-rich layer is located between the support layer and the insulating layer in the first direction, and the material of the support layer is intrinsic silicon.

[0022] The trap-rich layer can capture movable carriers on the silicon surface, and thus the crosstalk between devices can be reduced. Therefore, by integrating the trap-rich layer into the substrate layer, the PSC effect of the substrate layer can be improved, and thus the harmonic performance of the phase change switch can be improved. The PSC (parasitic surface carrier) effect refers to the formation of a conductive path by the parasitic carrier collection on the surface of the substrate, which causes crosstalk of devices above the substrate.

[0023] In a possible implementation, the trap-rich layer is an amorphous silicon layer or a polycrystalline silicon layer.

[0024] In this way, the trap-rich layer is an amorphous silicon layer or a polycrystalline silicon layer in a single-layer structure, and both can be used as a carrier trapping layer in the substrate layer to improve the PSC effect of the substrate layer.

[0025] In a possible implementation, the trap-rich layer includes an amorphous silicon layer and a polycrystalline silicon layer that are stacked.

[0026] In this way, the trap-rich layer can be a multi-layer structure of amorphous silicon and polycrystalline silicon, or can be a carrier trapping layer in the substrate layer to improve the PSC effect of the bottom layer.

[0027] The second aspect of the present application provides an electronic device comprising the phase change switch of any one of the first aspect. BRIEF DESCRIPTION OF DRAWINGS

[0028] FIG. 1 is a schematic diagram of a phase change switch in a top view in the related art;

[0029] FIG. 2 is a schematic diagram of a cross section in the direction of A-A in FIG. 1;

[0030] FIG. 3 is a simulation schematic diagram of a phase change of a phase change material layer in the phase change switch shown in FIG. 1;

[0031] FIG. 4 is a schematic diagram of an application scenario of a phase change switch provided by an embodiment of the present application;

[0032] FIG. 5 is a schematic diagram of a phase change switch in a top view provided by an embodiment of the present application;

[0033] FIG. 6 is an enlarged schematic diagram of B in FIG. 5 with a protective layer removed;

[0034] FIG. 7 is a schematic diagram of a cross section in the direction of A-A in FIG. 5;

[0035] FIG. 8 is a schematic diagram of a first heating electrode layer of the phase change switch shown in FIG. 5 in a top view;

[0036] FIG. 9 is a schematic diagram of a second heating electrode layer of the phase change switch shown in FIG. 5 in a top view;

[0037] FIG. 10 is a schematic diagram of a second heating electrode layer in a top view provided by a second embodiment of the present application;

[0038] FIG. 11 is a schematic diagram of a third second heating electrode layer in a top view provided by an embodiment of the present application;

[0039] FIG. 12 is a schematic diagram of another first heating electrode layer in a top view provided by an embodiment of the present application;

[0040] FIG. 13 is a schematic diagram of a fourth second heating electrode layer in a top view provided by an embodiment of the present application;

[0041] FIG. 14 is a schematic diagram of another phase change switch in a top view provided by an embodiment of the present application;

[0042] FIG. 15 is a schematic diagram of a cross section of still another phase change switch provided by an embodiment of the present application;

[0043] FIG. 16 is a first schematic diagram of a manufacturing process of the phase change switch shown in FIG. 5;

[0044] FIG. 17 is a second schematic view of a manufacturing process of the phase change switch shown in FIG. 5;

[0045] FIG. 18 is a third schematic view of a manufacturing process of the phase change switch shown in FIG. 5.

[0046] Legend: 100, substrate layer; 110, support layer; 120, trap-rich layer; 130, amorphous silicon layer; 140, polysilicon layer; 150, accommodation portion; 200, insulating layer; 300, first heating electrode layer; 310, first space; 320, first edge portion; 330, first intermediate portion; 331, first bar segment; 400, first heat-conductive layer; 500, phase change layer; 600, second heat-conductive layer; 610, third space; 620, fourth space; 700, second heating electrode layer; 710, second space; 720, second edge portion; 730, second intermediate portion; 731, second bar segment; 800, third heat-conductive layer; 900, protective layer; 10, first radio frequency electrode; 20, second radio frequency electrode; 30, inductive element; X, first direction; Y, second direction; Z, third direction. DETAILED DESCRIPTION

[0047] FIG. 1 is a schematic view of a phase change switch in the related art from a top perspective, FIG. 2 is a schematic view of a cross section in the A-A direction of FIG. 1, and FIG. 3 is a simulation schematic view of a phase change of a phase change material layer in the phase change switch shown in FIG. 1.

[0048] In the related art, referring to FIGS. 1 and 2, a phase change switch 600 includes a substrate layer 601, an insulating layer 602, a heating electrode layer 603, a heat-conductive layer 604, a phase change material layer 605, and a radio frequency electrode layer 606. The insulating layer 602 is between the substrate layer 601 and the heating electrode layer 603 and between the substrate layer 601 and the heat-conductive layer 604. The heat-conductive layer 604 is between the phase change material layer 605 and the heating electrode layer 603. The radio frequency electrode layer 606 is electrically connected to the phase change material layer 605, and the radio frequency electrode layer 606 includes two radio frequency electrodes 607. The phase change material layer 605 is heated by controlling the heating electrode layer 603 to generate heat, so that the performance of the phase change material changes, and the function of the switching device is realized.

[0049] However, the heating efficiency of the heating electrode layer 603 is low, resulting in low power capacity of the phase change switch 600. Specifically, as shown in FIG. 3, the thicker the phase change material layer 605 is, the greater the heating power required is, resulting in greater temperature difference between the upper and lower surfaces of the phase change material layer 605, and also resulting in reduced power capacity of the phase change switch 600. In addition, the thinner the phase change material layer 605 is, the greater the area of the phase change material layer 605 is to reach the same on-resistance, and therefore, the heating capacity of the heating electrode layer 603 limits the power capacity of the phase change switch 600.

[0050] In addition, heating the phase change material layer 605 by the heating electrode layer 603 forms a trapezoidal phase change region (as shown in FIG. 2B), and the oblique edge coupling results in large parasitic capacitance, resulting in reduced quality factor of the phase change switch 600. In addition, the substrate layer 601 uses a silicon substrate with high thermal conductivity, but the high-resistance silicon substrate has PSC effect, resulting in large harmonics of the substrate layer 601, and therefore, the harmonic performance of the phase change switch 600 is limited by the substrate layer 601.

[0051] Therefore, the phase change switch and the electronic device provided in the embodiments of the present application can increase the heating efficiency of the phase change material by using the hollow electrode to heat the phase change material on both sides of the phase change material, and can improve the power capacity of the phase change switch. In addition, the phase change switch is internally provided with an inductive element 30 electrically connected to the heating electrode, which can reduce the influence of parasitic capacitance and improve the quality factor of the phase change switch. In addition, the phase change switch uses a substrate layer 100 with a trap-rich layer 120, which can improve the PSC effect of the substrate layer 100, thereby improving the harmonic performance of the phase change switch. The PSC (parasitic surface carrier) effect refers to the formation of a conductive path by the concentration of parasitic carriers on the surface of the substrate, causing crosstalk of the device above the substrate.

[0052] The electronic device can be a base station, a terminal device, a radar device, a WIFI device, a satellite, a communication device, or any other device including a phase change switch. For example, as shown in FIG. 4, the electronic device can be a radar device, and the phase change switch is used as a radio frequency switch and connected to a transmitting system and a receiving system respectively to switch the transmitting system and the receiving system. FIG. 4 is a schematic diagram of an application scenario of a phase change switch provided in the embodiments of the present application.

[0053] In the embodiments of the present application, the first direction X, the second direction Y, and the third direction Z are perpendicular to each other, and the first direction X is defined as the thickness direction of the phase change switch, or the first direction X is defined as the thickness direction of the phase change layer 500 in the phase change switch.

[0054] The phase change switch provided in the embodiments of the present application will be described below with reference to the accompanying drawings.

[0055] FIG. 5 is a schematic diagram of a phase change switch in a top view according to an embodiment of the present application, FIG. 6 is an enlarged schematic diagram of B in FIG. 5, and FIG. 7 is a schematic diagram of a cross section along A-A in FIG. 5.

[0056] Referring to FIGS. 5-7, the phase change switch according to an embodiment of the present application includes a first heating electrode layer 300, a first heat conducting layer 400, a phase change layer 500, a second heat conducting layer 600, a second heating electrode layer 700, a substrate layer 100, a first radio frequency electrode 10, and a second radio frequency electrode 20. The first heating electrode layer 300, the first heat conducting layer 400, the phase change layer 500, the second heat conducting layer 600, the second heating electrode layer 700, the first radio frequency electrode 10, and the second radio frequency electrode 20 are all located on the same side of the substrate layer 100. The first heating electrode layer 300, the first heat conducting layer 400, the phase change layer 500, the second heat conducting layer 600, and the second heating electrode layer 700 are arranged along a first direction X, and the orthogonal projection of any two of the first heating electrode layer 300, the first heat conducting layer 400, the phase change layer 500, the second heat conducting layer 600, and the second heating electrode layer 700 along the first direction X overlap, that is, the first heating electrode layer 300, the first heat conducting layer 400, the phase change layer 500, the second heat conducting layer 600, and the second heating electrode layer 700 are arranged in a stack along the first direction X. The first heating electrode layer 300 is electrically connected to the second heating electrode layer 700. The first radio frequency electrode 10 and the second radio frequency electrode 20 are arranged at intervals along a second direction Y, and the first radio frequency electrode 10 and the second radio frequency electrode 20 are respectively electrically connected to opposite ends of the phase change layer 500.

[0057] The material of the phase change layer 500 is a phase change material (PCM), which refers to a material having at least two different phases that provide different resistivities. The different phases can include an amorphous state having a high resistivity and a crystalline state having a low resistivity (i.e., a lower resistivity than the amorphous state). The transition between the amorphous state and the crystalline state can be induced by controlling the temporal versus thermal profile within the phase change material. Since the material of the phase change layer 500 is a phase change material, the phase change switch can also be referred to as a phase change material switch in some embodiments. In addition, the phase change layer 500 can also be referred to as a phase change material layer in some embodiments.

[0058] In some possible implementation manners, referring to FIG. 7, the phase change switch can further include an insulating layer 200, a portion of the insulating layer 200 being located between the substrate layer 100 and the first heat conducting layer 400 along the first direction X, and another portion of the insulating layer 200 being located between the substrate layer 100 and the first heating electrode layer 300 along the first direction X.

[0059] FIG. 8 is a schematic view of the first heating electrode layer of the phase change switch shown in FIG. 5 in a top view, and FIG. 9 is a schematic view of the second heating electrode layer of the phase change switch shown in FIG. 5 in a top view.

[0060] Referring to FIGS. 7-9, the first heating electrode layer 300 includes a first space 310 extending through the first heating electrode layer 300 in the first direction X, and the second heating electrode layer 700 includes a second space 710 extending through the second heating electrode layer 700 in the first direction X, and the orthographic projection of the phase change layer 500 in the first direction X overlaps with the projection of any one of the first space 310 and the second space 710 in the first direction X. The phase change material changes between the crystalline state and the amorphous state by heating the phase change layer 500 by the first heating electrode layer 300 and the second heating electrode layer 700, so as to realize the conduction or disconnection of the first radio frequency electrode 10 and the second radio frequency electrode 20, thereby realizing the switching function.

[0061] By respectively arranging the first heating electrode layer 300 and the second heating electrode layer 700 on opposite sides of the phase change layer 500, the opposite sides of the phase change layer 500 can be heated at the same time, so that the phase change layer 500 can reach the phase change temperature faster. At the same time, by arranging the first space 310 extending through the first heating electrode layer 300 and the second space 710 extending through the second heating electrode layer 700, the resistance values of the opposite parts of the first heating electrode layer 300 and the second heating electrode layer 700 relative to the phase change layer 500 in the first direction X are increased, which can increase the partial pressure of the opposite parts of the first heating electrode layer 300 and the second heating electrode layer 700 relative to the phase change layer 500, thereby further improving the heating speed of the first heating electrode layer and the second heating electrode layer 700, so that the phase change layer 500 quickly reaches the phase change temperature. Therefore, the phase change switch provided by the embodiments of the present application improves the heating efficiency of the phase change layer 500, so that the volume and / or thickness of the phase change layer 500 can be increased, thereby improving the power capacity of the phase change switch.

[0062] Exemplarily, referring to FIG. 6, the length of the second heating electrode layer 700 in the third direction Z is greater than the length of the phase change layer 500 in the third direction Z, and similarly, the length of the first heating electrode layer 300 in the third direction Z is also greater than the length of the phase change layer 500 in the third direction Z, so that the phase change layer 500 is uniformly heated.

[0063] The specific structure of the first space 310 is not limited here. Exemplarily, referring to FIG. 8, the first space 310 can be a through hole. Alternatively, in some embodiments, the first space 310 can also be a notch.

[0064] The number of the first spaces 310 can be one or more. For example, as shown in FIG. 8, the number of the first spaces 310 is multiple. When the number of the first spaces 310 is multiple, the structures of the multiple first spaces 310 can be the same or different. For example, as shown in FIG. 8, the number of the first spaces 310 is multiple, and the structures of the multiple first spaces 310 are the same.

[0065] The specific shape of the first space 310 is not limited herein. For example, as shown in FIG. 8, the shape of the first space 310 can be a rectangular through hole. Alternatively, in some embodiments, the first space 310 can also be a circular through hole.

[0066] The specific structure of the second space 710 is not limited herein. For example, as shown in FIG. 9, the second space 710 can be a through hole. Alternatively, in some embodiments, the second space 710 can also be a notch.

[0067] The number of the second spaces 710 can be one or more. For example, as shown in FIG. 9, the number of the second spaces 710 is multiple. When the number of the second spaces 710 is multiple, the structures of the multiple second spaces 710 can be the same or different. For example, as shown in FIG. 9, the number of the second spaces 710 is multiple, and the structures of the multiple second spaces 710 are the same. Alternatively, in some embodiments, as shown in FIG. 10, the number of the second spaces 710 is multiple, and a part of the second spaces 710 can be a through hole, and another part of the second spaces 710 can be a notch. FIG. 10 is a schematic view of a second heating electrode layer in a top view according to an embodiment of the present application.

[0068] The specific shape of the second space 710 is not limited herein. For example, as shown in FIG. 9, the shape of the second space 710 can be a rectangular through hole. Alternatively, in some embodiments, as shown in FIG. 11, the second space 710 can also be a circular through hole. FIG. 11 is a schematic view of a third heating electrode layer in a top view according to an embodiment of the present application.

[0069] It should be noted that the shape of the first space 310 can also be similar to the shape of the second space 710 shown in FIG. 10 or FIG. 11, which will not be described in detail herein. In addition, when the number of the first spaces 310 and the number of the second spaces 710 are multiple, the arrangement of the multiple first spaces 310 and / or the multiple second spaces 710 is not limited to the three arrangements shown in FIG. 8, FIG. 10 and FIG. 11, and can also be other arrangements.

[0070] In some possible implementation manners, referring to FIG. 7, the orthogonal projection of the first space 310 on the first direction X does not overlap with the orthogonal projection of the second space 710 on the first direction X, so that the phase change layer 500 has no area opposite to the first space 310 or the second space 710 on the first direction X, and the phase change layer 500 can be heated by the first heating electrode layer 300 or the second heating electrode layer 700, so that the phase change layer 500 is heated everywhere, thereby improving the heating efficiency of the phase change layer 500.

[0071] When the number of the first spaces 310 and the number of the second spaces 710 are both plural, the orthogonal projection of any one of the first spaces 310 on the first direction X does not overlap with the orthogonal projection of any one of the second spaces 710 on the first direction X.

[0072] It should be noted that, in some embodiments, the orthogonal projection of the first space 310 on the first direction X and the orthogonal projection of the second space 710 on the first direction X can also partially overlap.

[0073] In some possible implementation manners, the area of the region of the first heating electrode layer 300 opposite to the phase change layer 500 on the first direction X can be greater than the area of the region of the second heating electrode layer 700 opposite to the phase change layer 500 on the first direction X, so that on the one hand, the heating efficiency of the phase change layer 500 can be improved, and on the other hand, the heat dissipation efficiency of the phase change switch can be improved.

[0074] In some possible implementation manners, referring to FIG. 8, the first heating electrode layer 300 includes a first middle part 330 and two first edge parts 320. The two first edge parts 320 are arranged at intervals on the third direction Z and located on opposite sides of the phase change layer 500. The first middle part 330 is located between the two first edge parts 320 and connected to the two first edge parts 320 respectively. The orthogonal projection of the phase change layer 500 on the first direction X overlaps with the orthogonal projection of the first middle part 330 on the first direction X, and the length of the phase change layer 500 on the third direction Z is less than or equal to the length of the first middle part 330 on the third direction Z. The two first edge parts 320 are used for electrically connecting to opposite ends of the second heating electrode layer 700 respectively.

[0075] To form the first space 310, exemplarily, continuing to refer to FIG. 8, the first intermediate portion 330 can include a plurality of first strip segments 331 arranged in the second direction Y, each first strip segment 331 being connected to two first edge portions 320 at opposite ends thereof in the third direction Z, and two adjacent first strip segments 331 and the two first edge portions 320 forming a first space 310 therebetween in the second direction Y. In this way, the resistance of the first heating electrode layer 300 can be increased, so as to increase the voltage of the first heating electrode layer 300, and thus improve the heating efficiency.

[0076] It should be noted that the number of the first strip segments 331 is three as shown in FIG. 8, but the number of the first strip segments 331 can also be more than or less than three.

[0077] It should be noted that in addition to being formed by the plurality of first strip segments 331, the first intermediate portion 330 can also be a plate structure in some embodiments, and in this case, the first spaces 310 are located on the first intermediate portion 330 and extend through the first intermediate portion 330 in the first direction X. For example, as shown in FIG. 12, the number of the first spaces 310 is a plurality and extends through the first intermediate portion 330, so that the first intermediate portion 330 has a mesh structure. The first spaces 310 are rectangular through holes, but the first spaces 310 can also be circular through holes. FIG. 12 is a schematic view of another first heating electrode layer in a top view according to an embodiment of the present application.

[0078] In some possible implementation manners, referring to FIG. 9, the second heating electrode layer 700 includes a second intermediate portion 730 and two second edge portions 720. The two second edge portions 720 are arranged in the third direction Z and located at opposite sides of the phase change layer 500. The second intermediate portion 730 is located between and connected to the two second edge portions 720. The orthographic projection of the phase change layer 500 in the first direction X overlaps the orthographic projection of the second intermediate portion 730 in the first direction X, and the length of the phase change layer 500 in the third direction Z is less than or equal to the length of the second intermediate portion 730 in the third direction Z. The two second edge portions 720 are configured to be electrically connected to opposite ends of the first heating electrode layer 300, respectively.

[0079] To form the second space 710, exemplarily, referring to FIG. 9, the second intermediate portion 730 can include a plurality of second strip segments 731 arranged in the second direction Y, each of the second strip segments 731 is connected with two second edge portions 720 at opposite ends in the third direction Z, and two adjacent second strip segments 731 and the two second edge portions 720 form a second space 710, that is, there is a second space 710 between two adjacent second strip segments 731 in the second direction Y. In this way, the resistance value of the first heating electrode layer 300 can be increased, so as to increase the voltage of the first heating electrode layer 300, and further improve the heating efficiency.

[0080] It should be noted that the number of the second strip segments 731 is two as shown in FIG. 9, but the number of the second strip segments 731 can also be more than two.

[0081] It should be noted that the second intermediate portion 730 can also have other structures in addition to being composed of a plurality of second strip segments 731, for example, as shown in FIG. 13, which is a schematic view of a fourth second heating electrode layer provided by the embodiment of the present application in a top view.

[0082] Specifically, referring to FIG. 13, the second intermediate portion 730 can have a plate structure, at this time, the second spaces 710 are located on and penetrate through the second intermediate portion 730, and the number of the second spaces 710 is a plurality, so that the second intermediate portion 730 has a mesh structure. It should be noted that all the second spaces 710 are rectangular through holes, but all the second spaces 710 can also be circular through holes (as shown in FIG. 11), or as shown in FIG. 10.

[0083] In some possible implementation manners, referring to FIG. 7, the first strip segments 331 and the second strip segments 731 are arranged alternately in the second direction Y, that is, the orthogonal projection of any one of the first strip segments 331 in the first direction X and the orthogonal projection of any one of the second strip segments 731 in the first direction X are arranged staggeredly in the second direction Y, which can further improve the heating efficiency of the phase change layer 500.

[0084] It should be noted that in addition to being arranged alternately in the second direction Y, at least part of the orthogonal projection of the first strip segments 331 in the first direction X can also overlap with the orthogonal projection of the second strip segments 731 in the first direction X.

[0085] In some possible implementation manners, as shown in FIG. 7, the second heat-conducting layer 600 further includes a third space 610 and a fourth space 620 for penetrating through the second heat-conducting layer 600, the first radio frequency electrode 10 is electrically connected with the phase change layer 500 through the third space 610, and the second radio frequency electrode 20 is electrically connected with the phase change layer 500 through the fourth space 620.

[0086] Wherein, the specific structure of the third space 610 is not limited here. Illustratively, the third space 610 can be a via hole.

[0087] Wherein, the specific structure of the fourth space 620 is not limited here. Illustratively, the fourth space 620 can be a via hole.

[0088] In some possible implementation manners, referring to FIG. 5, the phase change switch can further include two inductive elements 30, which are located on opposite sides of the phase change layer 500, and each of the two inductive elements 30 is electrically connected with any one of the first heating electrode layer 300 and the second heating electrode layer 700, so as to reduce the parasitic capacitance effect of the phase change switch, thereby improving the quality factor of the phase change switch.

[0089] Illustratively, each of the inductive elements 30 can be electrically connected with the first heating electrode layer 300. However, in some embodiments, each of the inductive elements 30 can also be electrically connected with the second heating electrode layer 700. In other embodiments, one of the inductive elements 30 can be electrically connected with the first heating electrode layer 300, and the other inductive element 30 can be electrically connected with the second heating electrode layer 700.

[0090] During the use of the phase change switch, one of the inductive elements 30 is used as an input end for receiving current, and the received current is transmitted to the first heating electrode layer 300 and the second heating electrode layer 700, so that the first heating electrode layer 300 and the second heating electrode layer 700 generate heat and heat the phase change layer 500. At the same time, the other inductive element 30 is used as an output end for leading out the current in the first heating electrode layer 300 and the second heating electrode layer 700.

[0091] The specific structure of the inductive element 30 is not limited here. Illustratively, referring to FIG. 5, the inductive element 30 can be a wire-wound inductor, and the inductive element 30 and a part of one of the first heating electrode layer 300 and the second heating electrode layer 700 electrically connected with the inductive element 30 constitute an integrated inductor, so as to reduce the parasitic capacitance effect of the phase change switch, thereby improving the quality factor of the phase change switch.

[0092] Illustratively, as shown in FIG. 5, the inductive element 30 is electrically connected with the first heating electrode layer 300, and a part of the first heating electrode layer 300 and the wire-wound inductor constitute an integrated inductor, and along the first direction X, the orthographic projection of the wire-wound inductor partially overlaps the orthographic projection of the first heating electrode layer 300. However, in some embodiments, the inductive element 30 can also constitute an integrated inductor with a part of the second heating electrode layer 700.

[0093] The specific structure of the wire-wound inductor is not limited herein. Exemplarily, as shown in FIG. 5, the wire-wound inductor can be a spiral structure located in the same plane. In other embodiments, as shown in FIG. 14, the wire-wound inductor can also be a three-dimensional wire-wound inductor formed by a TSV (through silicon via) or the like. FIG. 14 is a schematic diagram of another phase change switch according to an embodiment of the present application in a top view.

[0094] It should be noted that the integrated inductor can include a plurality of inductor elements 30 in addition to the inductor element 30, in which case the plurality of inductor elements 30 are connected in series.

[0095] In some possible implementation manners, when the integrated inductor is of the structure shown in FIG. 5, the phase change switch can further include an insulating medium (not shown in the figure) located between the wire-wound inductor and a portion of the first heating electrode layer 300, so as to ensure normal use of the integrated inductor.

[0096] In some possible implementation manners, as shown in FIG. 7, the substrate layer 100 is provided with a receiving portion 150 on one side thereof facing the phase change layer 500 along the first direction X, the receiving portion 150 being configured to receive a portion of the insulating layer 200 and the first heating electrode layer 300, so that another portion of the insulating layer 200 is located between the substrate layer 100 and the first heat-conducting layer 400 and is in contact with the substrate layer 100 and the first heat-conducting layer 400, respectively. In this way, by receiving the first heating electrode layer 300 through the receiving portion 150, the thickness of the phase change switch in the first direction X can be reduced, which is conducive to miniaturization of the phase change switch.

[0097] The specific structure of the receiving portion 150 is not limited herein. Exemplarily, the receiving portion 150 can be a groove matched with FIG. 8.

[0098] In some possible implementation manners, as shown in FIG. 7, the substrate layer 100 can include a support layer 110 and a trap-rich layer 120, the trap-rich layer 120 being located between the support layer 110 and the insulating layer 200 along the first direction X, and the material of the support layer 110 being intrinsic silicon.

[0099] Since the trap-rich layer 120 can capture movable carriers on the silicon surface, thereby reducing the crosstalk between devices. Therefore, by integrating the trap-rich layer 120 into the substrate layer 100, the PSC effect of the substrate layer 100 can be improved, thereby improving the harmonic performance of the phase change switch. The PSC (parasitic surface carrier) effect refers to the formation of a conductive path by the aggregation of parasitic carriers on the surface of the substrate, causing crosstalk of devices above the substrate.

[0100] As shown in FIG. 7, the depth of the accommodating portion 150 in the first direction X is less than the depth of the trap-rich layer 120 in the first direction X, ensuring that the trap-rich layer 120 is present below the first heating electrode layer 300, so as to further improve the harmonic performance of the phase change switch.

[0101] Exemplarily, the trap-rich layer 120 can be an amorphous silicon layer 130. However, in some embodiments, the trap-rich layer 120 can also be a polysilicon layer 140. As can be seen, the trap-rich layer 120 is either amorphous silicon or polysilicon in a single-layer structure, and can serve as a carrier trapping layer in the substrate layer 100, so as to improve the PSC effect of the bottom layer.

[0102] In addition to being a single-layer structure, the trap-rich layer 120 can also include an amorphous silicon layer 130 and a polysilicon layer 140 arranged in a stack, as shown in FIG. 15. In this way, the trap-rich layer 120 can be a multi-layer structure composed of amorphous silicon and polysilicon, and can serve as a carrier trapping layer in the substrate layer 100, so as to improve the PSC effect of the bottom layer. FIG. 15 is a cross-sectional schematic view of another phase change switch provided in an embodiment of the present application.

[0103] Exemplarily, as shown in FIG. 15, the polysilicon layer 140 is located between the amorphous silicon layer 130 and the support layer 110 along the first direction X. However, in some embodiments, the amorphous silicon layer 130 can also be located between the polysilicon layer 140 and the support layer 110 along the first direction X.

[0104] In some possible implementation manners, the phase change switch can further include a protective layer 900 connected with the insulating layer 200 and forming a space accommodating the first heating electrode layer 300, the second heating electrode layer 700, the first heat-conducting layer 400, the second heat-conducting layer 600, the third heat-conducting layer 800 and the phase change layer 500, and the protective layer 900 can protect the second heating electrode layer 700, the second heat-conducting layer 600 and the like from being damaged.

[0105] In some possible implementation manners, referring to FIG. 7, the phase change switch can further include a third heat-conducting layer 800 in an integral structure with the second heat-conducting layer 600, the third heat-conducting layer 800 is in a ring structure, one end of the third heat-conducting layer 800 is connected with the second heat-conducting layer 600, and the other end of the third heat-conducting layer 800 is in contact with or spaced apart from the first heat-conducting layer 400 along the first direction X. The second heat-conducting layer 600 covers the opening of one end of the third heat-conducting layer 800, and the first heat-conducting layer 400 covers the opening of the other end of the third heat-conducting layer 800, and the first heat-conducting layer 400, the second heat-conducting layer 600 and the third heat-conducting layer 800 can form a cavity accommodating the phase change layer 500.

[0106] Fig. 16 is a first schematic view of a manufacturing process of the phase change switch shown in Fig. 5, Fig. 17 is a second schematic view of the manufacturing process of the phase change switch shown in Fig. 5, and Fig. 18 is a third schematic view of the manufacturing process of the phase change switch shown in Fig. 5.

[0107] In the manufacturing process of the phase change switch, as shown in Fig. 16, the accommodation portion 150 is first formed on the trap-rich layer 120, then the insulating layer 200 is arranged on the surface of the trap-rich layer 120, then the first heating electrode layer 300 is arranged on the surface of the insulating layer 200 and located in the accommodation portion 150, and then the first heat-conducting layer 400 covers the portion of the first heating electrode layer 300 opposite to the phase change layer 500. As shown in Fig. 17, the phase change layer 500 is placed on the surface of the first heat-conducting layer 400, and then the second heat-conducting layer 600 and the third heat-conducting layer 800 are simultaneously formed on the surface of the phase change layer 500 in an integrated structure. As shown in Fig. 18, the second heating electrode layer 700 is first arranged on the surface of the second heat-conducting layer 600, then the protective layer 900 is formed, and finally the first radio frequency electrode 10 and the second radio frequency electrode 20 are respectively connected to the opposite two ends of the phase change layer 500.

[0108] As shown in Fig. 17, in the manufacturing process of the phase change switch, the second heat-conducting layer 600 and the third heat-conducting layer 800 are simultaneously manufactured, which can improve the production efficiency of the phase change switch.

[0109] In the embodiments of the present application, the specific material of the phase change layer 500 is not limited. The material of the phase change layer 500 can be a phase change material of different systems such as Ge2Sb2Te5, Sb2Te3, Sb2Te, GexSb1-x, GeSb2Te4, Ti-Sb2Te3, In-Sb2Te3, In-Ge2Sb2Te5 or GeTe.

[0110] In the embodiments of the present application, the specific material of the first heat-conducting layer 400, the second heat-conducting layer 600 and the third heat-conducting layer 800 is not limited. The material of any one of the first heat-conducting layer 400, the second heat-conducting layer 600 and the third heat-conducting layer 800 is made of an electrically insulating and heat-conducting material, for example, any one of the first heat-conducting layer 400, the second heat-conducting layer 600 and the third heat-conducting layer 800 can be an electrically insulating material with high thermal conductivity such as aluminum nitride (AlN), AlXOY, BeXOY, SiC, diamond or diamond-like carbon.

[0111] In the embodiments of the present application, the specific materials of the first heating electrode layer 300 and the second heating electrode layer 700 are not limited herein. For example, the main conductive structure of at least one of the first heating electrode layer 300 and the second heating electrode layer 700 is any one or a combination of tungsten or a nitride of tungsten, a nitride of Ni, a nitride / oxide of Ti, a nitride of Ta, a nitride of tantalum, or any one of NiCr and NiCrSi. In some embodiments, in order to increase the adhesion of the metal layer adjacent material, a specific adhesion layer material such as Ti, Ni, etc. can be optionally added.

[0112] In the embodiments of the present application, the specific materials of the first radio frequency electrode 10 and the second radio frequency electrode 20 are not limited herein. For example, the material of any one of the first radio frequency electrode 10 and the second radio frequency electrode 20 can include an interconnection metal such as Au, Cu, Al, Ag, etc.

[0113] In some embodiments, in order to improve the adhesion of the first radio frequency electrode 10 and / or the second radio frequency electrode 20, at least one of the first radio frequency electrode 10 and the second radio frequency electrode 20 includes a first metal layer and a second metal layer, the first metal layer can include an interconnection metal such as Au, Cu, Al, Ag, etc., and the second metal layer can include a thin layer metal such as Ti, Ni, etc., and the second metal layer is located between the first metal layer and the phase change layer 500 along the first direction X.

[0114] In the above description, the first heating electrode layer 300 and the second heating electrode layer 700 are electrically connected, that is, the first heating electrode layer 300 and the second heating electrode layer 700 share one current input interface and one current output interface. However, in some embodiments, the first heating electrode layer 300 and the second heating electrode layer 700 can also not be electrically connected, at this time, the first heating electrode layer 300 and the second heating electrode layer 700 correspond to one current output interface and one current input interface respectively. Further, in order to reduce the parasitic capacitance, the first heating electrode layer 300 is electrically connected with two inductive elements 30 located on opposite sides of the phase change layer 500, and the second heating electrode layer 700 is also electrically connected with two inductive elements 30 located on opposite sides of the phase change layer 500.

[0115] In the description of the embodiments of the present application, it should be noted that unless specifically defined and limited otherwise, the terms "mounting", "connection", "connecting" should be understood in a broad sense, for example, it can be a fixed connection, or an indirect connection through an intermediate medium, or an internal communication of two elements or an interaction relationship between two elements. For those skilled in the art, the specific meanings of the above terms in the embodiments of the present application can be understood according to the specific circumstances.

[0116] In the description of the present application, the meaning of "a plurality of" is two or more, unless otherwise specifically specified.

[0117] The terms "first", "second", "third", "fourth" and the like in the description of the present application and in the claims of the present application and above-described drawings, if any, are used for distinguishing between similar objects talking about the priority and should not necessarily be construed as referring numerically to the priority.

[0118] The term "a plurality" herein refers to two or more. The term "and / or" herein merely describes an associated relationship between associated objects, which means that there can be three relationships, for example, A and / or B, which can represent three cases: A exists alone, A and B exist together, and B exists alone. In addition, the character " / " herein generally represents an "or" relationship between the associated objects; in the formula, the character " / " represents a "division" relationship between the associated objects.

[0119] It can be understood that various numbers involved in the embodiments of the present application are only distinguished for convenience of description, and do not limit the scope of the embodiments of the present application.

[0120] It can be understood that the size of the serial number of each process in the embodiments of the present application does not mean the order of execution, and the execution order of each process should be determined by its function and inherent logic, and should not constitute any limitation on the implementation process of the embodiments of the present application.

Claims

1. A phase change switch, characterized by, The first heating electrode layer, the first heat conduction layer, the phase change layer, the second heat conduction layer and the second heating electrode layer are arranged along a first direction; Any two of the first heating electrode layer, the first heat conduction layer, the phase change layer, the second heat conduction layer and the second heating electrode layer overlap in a projection in the first direction; The first heating electrode layer and the second heating electrode layer are electrically connected, the first heating electrode layer includes a first space penetrating the first heating electrode layer along the first direction, the second heating electrode layer includes a second space penetrating the second heating electrode layer along the first direction, and a projection of the phase change layer in the first direction overlaps with a projection of any one of the first space and the second space in the first direction.

2. The phase change switch of claim 1, wherein, The first space and the second space do not overlap in a projection in the first direction.

3. The phase change switch of claim 1 or 2, wherein, An area of a region of the first heating electrode layer opposite to the phase change layer along the first direction is greater than an area of a region of the second heating electrode layer opposite to the phase change layer along the first direction.

4. Phase change switch according to any of claims 1 to 3, characterized in that The first heating electrode layer includes a plurality of first bar segments arranged along a second direction, the second heating electrode layer includes a plurality of second bar segments arranged along the second direction, the first bar segments and the second bar segments are alternately arranged along the second direction, and there is a first space between two adjacent first bar segments and a second space between two adjacent second bar segments; wherein the first direction is perpendicular to the second direction.

5. Phase change switch according to any of claims 1 to 4, characterized in that The phase change switch further includes two inductance elements, the two inductance elements are located on opposite sides of the phase change layer, and each inductance element is electrically connected to any one of the first heating electrode layer and the second heating electrode layer.

6. The phase change switch of claim 5, wherein, The phase change switch further includes two integrated inductances, each integrated inductance includes one inductance element and a part of one of the first heating electrode layer and the second heating electrode layer electrically connected to the inductance element, and the inductance element is a wire-wound inductance.

7. The phase change switch of any one of claims 1 to 5, wherein, The phase change switch further includes a substrate layer and an insulating layer, a part of the insulating layer is located between the substrate layer and the first heat conduction layer along the first direction, and another part of the insulating layer is located between the substrate layer and the first heating electrode layer along the first direction.

8. The phase change switch of claim 7, wherein, The substrate layer includes a support layer and a trap-rich layer, the trap-rich layer is located between the support layer and the insulating layer along the first direction, and the material of the support layer is intrinsic silicon.

9. The phase change switch of claim 8, wherein, The trap-rich layer is an amorphous silicon layer or a polycrystalline silicon layer; or The trap-rich layer includes an amorphous silicon layer and a polycrystalline silicon layer stacked.

10. An electronic device, comprising: The phase change switch includes any one of claims 1 to 9.

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