Arrangement, installation and method for generating EUV radiation or for conducting nuclear fusion, and production method for producing microchips or semiconductor intermediate products for producing microchips

Abstract

An arrangement (16) for generating EUV radiation or for conducting nuclear fusion by irradiating a target material (18) with a laser beam (14). The arrangement comprises a target chamber (20) having an interior (22) with a target area (24) for irradiating the target material (18) with the laser beam (14), an introduction device (26) for introducing the target material (18) into the target area (24), and a manipulation device (34) for shaping and / or positioning the target material (18) within the target area (24).

Description

[0001] Arrangement, system and method for generating EUV radiation or for operating nuclear fusion, as well as manufacturing methods for producing microchips or semiconductor intermediates for producing microchips

[0002] Description

[0003] The invention relates to an arrangement, a system and a method for generating EUV radiation or for operating nuclear fusion.

[0004] Extreme ultraviolet (EUV) radiation enables the precise and highly accurate imaging of fine structures, which is why EUV radiation is frequently used in lithography, a process that can therefore be called EUV lithography. Due to the advantage of precise and highly accurate imaging of fine structures, EUV lithography is typically used for the production of microchips.

[0005] The EUV radiation for EUV lithography can be generated using a system. This system typically includes a laser beam generation unit, a beam guidance device, and a target chamber containing a target material.

[0006] EUV radiation can be generated by directing and / or focusing the laser beam onto the target material using the beam guidance device. In other words, the beam guidance device can be configured to direct and / or focus the laser beam from the laser beam generation assembly onto the target material. For this purpose, the beam guidance device can comprise multiple optical components, in particular lenses and / or mirror modules.

[0007] When the laser beam strikes the target material, it can be converted into a plasma state, generating EUV radiation. In other words, the target material can emit EUV radiation when irradiated with the laser beam. A vacuum is preferably established in the target chamber, and hydrogen is then introduced. The pressure of the hydrogen in the target chamber can range from 1 Pa (Pascal) to 10⁻⁶. 15 Pa, preferably 10' 3 Pa to 10- 12 Pa, exhibit.

[0008] The target material can be a metal, for example, tin. The target material can be in the form of droplets, for example, tin droplets. The formation of the target material as tin droplets can be particularly advantageous for the generation of EUV radiation due to a high yield of EU radiation.

[0009] The laser beam generation arrangement can have a number, for example 1, 2, or 3, of laser beam sources. Each laser beam source can be configured to generate a laser beam. The laser beams from the laser beam sources can combine to form the laser beam of the laser beam generation arrangement.

[0010] If the laser beam generation arrangement has two or more laser beam sources, the wavelengths of the laser beams from the laser beam sources may be equal in magnitude or different from each other.

[0011] For example, at least one laser beam source can be configured as a CO2 laser. The CO2 laser can provide a laser beam with a wavelength of 9 pm (micrometers) to 11 pm, preferably 10.6 pm.

[0012] Alternatively, the at least one laser beam source can be configured as a solid-state laser, particularly with thulium as the laser-active material. The solid-state laser can provide a laser beam with a wavelength of 1.8 pm to 3 pm, particularly 1.9 pm to 2.1 pm, preferably 2 pm. Using a laser beam with a wavelength of approximately 2 pm for generating EUV radiation can be more economical than using a laser beam with a wavelength of 10.6 pm, since the energy consumption for generating the laser beam using the solid-state laser can be lower than the energy consumption for generating the laser beam using the CO2 laser.

[0013] The laser beam of the laser beam generation arrangement can be a pulsed laser beam. The pulsed laser beam can include pre-pulses and main pulses. Each main pulse can be preceded, particularly shortly before, by a pre-pulse. The pre-pulse can have a lower laser power than the main pulse. The pre-pulses and the main pulses can be generated using the same laser beam source or different laser beam sources.

[0014] The pre-pulse can prepare the target material for the main pulse and / or perform measurement tasks by measuring the pre-pulse's back reflection from the target material, ensuring that as much of the main pulse as possible is converted into EUV radiation upon impact. In particular, the pre-pulse can be designed to influence the target material, for example, by heating, expanding, vaporizing, ionizing, and / or transitioning the target material into a plasma state.

[0015] Typically, pre-pulses can be generated by a solid-state laser in the laser beam generation arrangement, which provides a laser beam with a wavelength in the range of 1 pm to 1.6 pm, preferably 1.01 to 1.08 pm. The main pulses can be generated by the CC>2 laser, which provides the laser beam with a wavelength of 9 pm to 11 pm, preferably 10.6 pm, or by the solid-state laser, which provides the laser beam with a wavelength of 1.8 pm to 3 pm, in particular 1.9 pm to 2.1 pm, preferably about 2 pm.

[0016] The main pulse allows a major portion of the target material affected by the pre-pulse to be converted into a plasma state, thus generating EUV radiation.

[0017] The laser beam can be a polarized laser beam.

[0018] Furthermore, energy can be generated through nuclear fusion in a power plant. Nuclear fusion can be understood as the merging of atomic nuclei. Nuclear fusion can be ignited by irradiating a target material with a laser beam, which is why such nuclear fusion can also be referred to as laser-driven fusion.

[0019] The invention aims to provide an arrangement, a system and a method for generating EUV radiation or for operating nuclear fusion, each enabling more efficient generation of EUV radiation or more efficient nuclear fusion.

[0020] The invention solves this problem by providing an arrangement with the features of claim 1, a system with the features of claim 10, and a method with the features of claim 11. Advantageous embodiments and further developments of the invention are set forth in the dependent claims.

[0021] An arrangement according to the invention is designed for generating EUV radiation or for operating nuclear fusion by irradiating a target material with a laser beam. The arrangement comprises a target chamber, an insertion device, and a manipulation device. The target chamber has an interior space. The interior space has a target area for irradiating the target material with the laser beam. The insertion device is designed for introducing the target material into the target area. The manipulation device is designed for shaping and / or positioning the target material within the target area.

[0022] Advantageously, the shape and / or position of the target material within the target area can be modified using the manipulation device so that the target material has an optimal shape and / or position for generating EUV radiation or for operating nuclear fusion. This allows for a particularly high yield of EUV radiation or makes initiating and operating nuclear fusion particularly easy and efficient.

[0023] The laser beam can have a wavelength in the range of 1.8 pm to 3 pm, in particular 1.9 pm to 2.1 pm, and / or 9 pm to 11 pm. In particular, the laser beam can have a wavelength of approximately 2 pm and / or 10.6 pm.

[0024] The target chamber can be designed as a vacuum chamber. The target chamber can be filled with hydrogen at a pressure of 1 Pa to 10⁻⁶. 15 Pa, preferably 10' 3 Pa up to 10' 12The target chamber should be filled with hydrogen. The pressure of the hydrogen in the target chamber can be suitable for the propagation of a sound wave. In other words, the hydrogen in the target chamber can serve as a transmission medium for a sound wave.

[0025] The target area can be limited by the interior space. The target area can be a region within the interior space. The target area can be smaller than the interior space. Any point within the target area can be irradiated with the laser beam. In particular, the laser beam can be directed and / or focused on any point within the target area. If the target material is located within the target area, it can be irradiated with the laser beam. If the target material is located outside the target area, it cannot be irradiated with the laser beam.

[0026] The target material can be a metal, for example tin. The target material can be in the form of droplets, for example tin droplets.

[0027] The injection device can, for example, convert the target material into a liquid state. The injection device can be configured to introduce the target material as droplets into the target area. The injection device can also be referred to as a droplet generator. The injection device can have a nozzle with a nozzle opening, the nozzle opening being located in the target chamber or immersed in a housing wall of the injection device, from which the target material emerges for injection. The exit of the target material from the nozzle opening allows the target material to be introduced into the target chamber.

[0028] The introduction of the target material into the target area by the introduction device can be achieved by the device introducing the target material into the interior in such a way that the target material moves into the target area. In other words, the target material can perform a movement within the target chamber. For example, gravity can act on the target material, causing it to move within the target chamber.

[0029] The insertion device and the manipulation device can be designed separately.

[0030] The manipulation device can be designed to shape and / or position the target material in the target area without contact, in particular without physical contact.

[0031] The term "shape of the target material" can be understood to mean that a shape of the droplet-shaped target material is changed and / or an unwanted change in the shape of the target material is counteracted.

[0032] For example, irradiating the target material with a laser beam can cause it to expand along the direction of the laser beam's propagation. This expansion can be counteracted by shaping the target material using the manipulation device. This advantageously allows the target material to achieve a spherical shape during laser irradiation, thereby avoiding aberrations in the EUV radiation. The spherical shape of the target material during laser irradiation can result in a particularly high yield of EUV radiation or facilitate the simple and efficient ignition and operation of nuclear fusion.

[0033] Positioning the target material can be understood as the manipulation device acting on the target material in such a way that the target material maintains its current position or is moved to a desired position.

[0034] For example, the target material may move within the target area. This movement can be counteracted by positioning the target material using the manipulation device. In particular, the manipulation device can act on the target material in such a way that it does not leave its current position. In other words, the manipulation device can act on the target material in such a way that it does not move. This ensures that the target material does not change its position while being irradiated with the laser beam. As a result, the laser beam can act on the target material without having to be repositioned. Advantageously, this allows for longer irradiation times of the target material with the laser beam.

[0035] Additionally or alternatively, the manipulation device can act on the target material in such a way that the target material performs a movement within the target area in a desired direction.

[0036] The arrangement may include a beam guidance device for directing the laser beam onto the target material. The beam guidance device may include optical components, in particular lenses and / or mirrors.

[0037] Another aspect of the setup is that radiation pressure is exerted on the target material by irradiating it with the laser beam. This radiation pressure can be exerted on the target material by the laser beam upon impact. Additionally or alternatively, pressures can occur during the transition of the target material into the plasma state. These pressures and / or the radiation pressure can cause an undesired change in the shape and / or position of the target material. This can lead to aberrations in the EUV radiation and / or the target material can, for example, come into contact with and damage an imaging device used to image the EUV radiation.If EUV radiation is used in an EUV system for EUV lithography, the target material can land on and damage an EUV scanner, a wafer to be exposed with EUV radiation, and / or a photomask. To prevent this, the arrangement includes a manipulation device designed to shape and / or position the target material within the target area, ensuring that the target material does not assume an undesired shape and / or position.

[0038] Another aspect of the arrangement may be that the manipulation device reduces unwanted expansion of the target material, especially in the plasma state, thereby achieving better optical properties of the EUV radiation and less contamination of the target chamber with the target material.

[0039] In a further development of the arrangement, the manipulation device is designed to shape and / or position the target material within the target area by directing a sound wave and / or a light beam onto the target material. Advantageously, the target material can be shaped and / or positioned without contact using the sound wave and / or the light beam.

[0040] Directing the sound wave onto the target material can be described as irradiating or sonicating the target material with the sound wave. Directing the light beam onto the target material can be described as irradiating the target material with the light beam.

[0041] The manipulation device can be designed to shape and / or position the target material by acoustic levitation.

[0042] The manipulation device can be configured to generate the sound wave. The sound wave can exert sound pressure on the target material. The target material can be shaped and / or positioned by the sound pressure. Sound pressure can be understood as the pressure acting on the target material when the sound wave strikes it. The sound wave can have a frequency in the range of 1 Hz (Hertz) to 1 GHz (Gigahertz), particularly 20 kHz (Kilohertz) to 100 kHz. The sound wave can have a sound intensity level above 130 dB (decibels). In particular, the sound wave can have a sound intensity level in the range of 130 dB to 160 dB.

[0043] The manipulation device can be designed to shape and / or position the target material by optical levitation.

[0044] The manipulation device can be configured to generate the light beam. The light beam can exert radiation pressure on the target material. The target material can be shaped and / or positioned by this radiation pressure. This radiation pressure can also be referred to as light pressure.

[0045] In a further development of the arrangement, the manipulation device includes a loudspeaker for emitting the sound wave. Additionally or alternatively, the manipulation device includes a light source for generating the light beam.

[0046] The loudspeaker can be located inside the target chamber. The loudspeaker can be directed towards the target area. The manipulation device can have multiple loudspeakers, in particular 2, 3, 4, 5 or 6, for emitting sound waves.

[0047] The light source can be configured as a laser beam source. The light beam can be a laser beam. The light beam can have a wavelength in the range of 0.8 pm to 3 pm, in particular 1 pm to 2.1 pm, and / or 9 pm to 11 pm. The light source can have an output for emitting the light beam. The output of the light source can be located in the target chamber. The output of the light source can be directed towards the target area. The light source can include an optical fiber for guiding the light beam, with one end of the optical fiber forming the output of the light source.

[0048] In a further development of the arrangement, the manipulation device includes a focusing unit for focusing the sound wave and / or the light beam onto the target material. Advantageously, this allows the target material to be shaped and / or positioned within the target area particularly effectively. In this further development of the arrangement, the focusing unit for focusing the sound wave includes a Fresnel zone plate. Additionally or alternatively, the focusing unit for focusing the light beam includes a lens.

[0049] In a further development of the arrangement, the manipulation device is configured to direct the sound wave and / or the light beam onto the target material in such a way that a directional component of the propagation direction of the sound wave, particularly immediately before it strikes the target material, and / or a directional component of the propagation direction of the light beam, particularly immediately before it strikes the target material, is opposite to a directional component of the propagation direction of the laser beam, particularly immediately before it strikes the target material. Advantageously, this can counteract, and in particular compensate for, the radiation pressure of the laser beam acting on the target material during the generation of EUV radiation or the operation of nuclear fusion.

[0050] In particular, the manipulation device can be designed to direct the sound wave and / or the light beam onto the target material in such a way that the direction of propagation of the sound wave, especially immediately before it hits the target material, and / or the direction of propagation of the light beam, especially immediately before it hits the target material, is opposite to the direction of propagation of the laser beam, especially immediately before it hits the target material.

[0051] In a further development of the arrangement, the manipulation device includes a control unit configured to control the shaping and / or positioning of the target material within the target area, depending on the introduction of the target material into the target area and / or depending on the irradiation of the target material with the laser beam. Advantageously, this allows the shaping and / or positioning of the target material within the target area to be coordinated with the introduction and / or irradiation of the target material with the laser beam. In particular, the control unit can be configured to initiate the shaping and / or positioning of the target material within the target area based on the introduction and / or irradiation of the target material.

[0052] The control unit can include a computer and / or a microcontroller. In a further development of the arrangement, the manipulation device includes a detector for detecting the current shape and / or position of the target material within the target area. The manipulation device is configured to shape and / or position the target material based on the current shape and / or position of the target material detected by the detector.

[0053] The detector can be coupled to the control unit.

[0054] The detector may include a camera, in particular a high-speed camera. The detector may be configured to detect the actual shape and / or position of the target material by generating image data, for example in the form of a photograph, of the target area. The control unit may be configured to analyze the image data.

[0055] The manipulation device, in particular the control unit, may be predefined with a target shape and / or position of the target material. The control unit may be configured to detect any deviation of the actual shape and / or position from the target shape and / or position. The manipulation device may be configured to shape and / or position the target material until the actual shape and / or position of the target material, as detected by the detector, matches the target shape and / or position. In particular, the manipulation device may be configured to direct the sound wave and / or light beam onto the target material based on the detected actual shape and / or position in such a way that the target material, after impact of the sound wave and / or light beam, exhibits the target shape and / or position.

[0056] In a further development of the arrangement, the arrangement includes a capture device for catching the target material after the generation of EUV radiation or after the operation of nuclear fusion. The manipulation device is designed to position the target material into the capture device, in particular to transport it. The capture device can be configured to receive and / or store the target material used for EUV radiation generation or nuclear fusion after the operation of nuclear fusion. This allows the introduction device to introduce further target material into the target area for the generation of EUV radiation or for the operation of nuclear fusion without the previously used target material interfering with or affecting subsequent generation of EUV radiation or subsequent operation of nuclear fusion with the additional target material.In particular, the capture device can prevent unwanted contact between the target material and a component of the arrangement after the generation of EUV radiation or after the operation of nuclear fusion.

[0057] The capture device can be located inside the target area. It can be located inside or outside the target area. The capture device can be designed as a container. After the generation of EUV radiation or after nuclear fusion, the target material can be moved into the capture device by means of the manipulation device. In other words, the manipulation device can be designed to move the target material into the capture device by directing the sound wave and / or light beam at the target material.

[0058] A system according to the invention is suitable for generating EUV radiation or for carrying out nuclear fusion by irradiating a target material with a laser beam. The system comprises a laser beam generation arrangement for generating the laser beam and a previously described arrangement.

[0059] A method according to the invention is designed for generating EUV radiation or for carrying out nuclear fusion by irradiating a target material with a laser beam. The method comprises the steps of: introducing the target material into a target area; shaping and / or positioning the target material in the target area by directing a sound wave and / or a light beam onto the target material; and generating EUV radiation or carrying out nuclear fusion by irradiating the target material with the laser beam.

[0060] The method can be configured to operate the previously described arrangement and / or system. The previously given description of the arrangement and / or system can also apply to identical or functionally equivalent features of the method, and / or vice versa.

[0061] The target material can be introduced into the target area using the introduction device. The previously described target chamber can contain the target area. The shaping and / or positioning of the target material within the target area can be performed using the manipulation device. The shaping and / or positioning of the target material within the target area and the generation of EUV radiation or the operation of nuclear fusion can occur simultaneously.

[0062] In a further development of the method, the sound wave and / or the light beam is directed onto the target material depending on the introduction of the target material into the target area and / or the irradiation of the target material with the laser beam.

[0063] A manufacturing process according to the invention is designed for the production of microchips or semiconductor intermediates for the production of microchips. The manufacturing process comprises the steps of a method with some or all of the features described above and an arrangement with some or all of the features described above, or a system as described above. The manufacturing process further comprises the step of directing the generated EUV radiation onto a semiconductor material and the step of forming a structure in the semiconductor material by means of the EUV radiation directed onto it.

[0064] Further advantages and advantageous embodiments of the invention can be seen from the figures, their description, and the claims. All features disclosed in the figures, their description, and the claims can be essential to the invention, both individually and in any combination. The figures show:

[0065] Fig. 1 shows a schematic representation of a system for generating EUV radiation, and

[0066] Fig. 2 shows a schematic sequence of a process for generating EUV radiation or for operating nuclear fusion with the system of Fig. 1.

[0067] Fig. 1 shows a system 10 for generating EUV radiation. The system 10 has a laser beam generation arrangement 12 for generating a laser beam 14 and an arrangement 16.

[0068] The laser beam generation arrangement 12 comprises a laser beam source with a solid-state laser. The solid-state laser uses thulium as its laser-active material to provide the laser beam 14 with a wavelength of 2 pm. The laser beam 14 is a pulsed laser beam. The arrangement 16 has a beam guidance device (not shown in Fig. 1) for guiding the laser beam 14 from the laser beam generation arrangement 12 to a target material 18. The beam guidance device has a plurality of lenses and mirrors to direct the laser beam 14 from the laser beam generation arrangement 12 to the target material 18. In particular, the laser beam 14 is focused onto the target material 18 by means of the lenses.

[0069] By irradiating the target material 18 with the laser beam 14, the target material 18 is brought into a plasma state and emits EUV radiation. An EUV mirror of the beam guidance device (not shown in Fig. 1) can deflect the emitted EUV radiation.

[0070] The arrangement 16 has a target chamber 20 with an interior space 22. The target chamber 20 is designed as a vacuum chamber. Hydrogen is present in the target chamber 20 at a pressure of 0.3 Pa. In other words, the interior space 22 contains hydrogen. The hydrogen can be used to purge the target chamber 20.

[0071] The interior space 22 has a target area 24 for irradiating the target material 18 with the laser beam 14. The target area 24 is a region within the interior space 22 in which any point can be irradiated with the laser beam 14. In other words, the beam guidance device is configured to direct and / or focus the laser beam 14 onto any point within the target area 24. In particular, the target area 24 can be defined such that if the target material 18 is located within the target area 24, the laser beam 14 can be directed and / or focused onto the target material 18, preferably by means of the beam guidance device, and if the target material 18 is located outside the target area 24, the laser beam 14 cannot be directed and / or focused onto the target material 18, preferably by means of the beam guidance device.

[0072] The arrangement 16 has a delivery device 26 for introducing the target material 18 into the target area 24. The delivery device 26 is filled with the target material 18. The delivery device 26 is designed to introduce the target material 18 into the interior 22 in individual droplets, one after the other. For this purpose, the delivery device 26 has a nozzle 28 with a nozzle opening 30. The nozzle opening 30 is located in the interior 22. The nozzle opening 30 is directed towards the target area 24. A droplet of the target material 18 can exit from the nozzle opening 30. Figure 1 shows three droplets of the target material 18 as an example.

[0073] The target material 18 is introduced into the interior space 22 by means of the introduction device 26 in such a way that the target material 18 moves into the target area 24. In particular, each droplet of the target material 18 moves along a direction of movement 32 within the interior space 22. The direction of movement 32 is directed towards the target area 24. This movement causes each droplet of the target material 18 to move into the target area 24. Gravity can also act on each droplet of the target material 18, causing the target material 18 to move along the direction of movement 32.

[0074] In the embodiment shown in Fig. 1, the target material 18 is made of tin. Each droplet of the target material 18 is a tin droplet.

[0075] The arrangement 16 has a manipulation device 34. The manipulation device 34 and the insertion device 26 are designed separately from each other. The manipulation device 34 is designed to shape and / or position a droplet of the target material 18 in the target area 24. In other words, the manipulation device 34 acts on the droplet of the target material 18 in the target area 24 such that the shape and / or position of the droplet of the target material 18 changes. In particular, the manipulation device 34 is designed to shape and / or position the droplet of the target material 18 without contact.

[0076] In the embodiment shown in Fig. 1, the manipulation device 34 has a first loudspeaker 36, which is configured to generate a sound wave 38, and a second loudspeaker 40, which is configured to generate a sound wave 42.

[0077] The hydrogen pressure in the target chamber 20 is suitable for the propagation of the sound wave 38 from the first loudspeaker 36 and the sound wave 42 from the second loudspeaker 40. Thus, the hydrogen in the target chamber 20 serves as a transmission medium for the sound wave 38 from the first loudspeaker 36 and the sound wave 42 from the second loudspeaker 40. The first loudspeaker 36 and the delivery device 26 are arranged on opposite sides of the target area 24. As a result, the sound wave 38 from the first loudspeaker 36 propagates in a direction 44 that is opposite to the direction of movement 32 of a droplet of the target material 18.

[0078] The manipulation device 34 has a first focusing unit 46 in the form of a Fresnel zone plate. The first focusing unit 46 is arranged such that the sound wave 38 of the first loudspeaker 36 is focused into the target area 24. This focuses the sound wave 38 of the first loudspeaker 36 onto the target material 18.

[0079] By directing the sound wave 38 from the first loudspeaker 36 towards the droplet of target material 18, the droplet is positioned within the target area 24. This positioning of the droplet within the target area 24 occurs through acoustic levitation. In other words, the sound wave 38 from the first loudspeaker 36 strikes the droplet of target material 18 and exerts a sound pressure on the droplet. This sound pressure stops the droplet of target material 18 from moving along the direction 32 and allows it to maintain its current position within the target area 22.

[0080] While the sound wave 38 from the first loudspeaker 36 strikes the droplet of target material 18 and holds it in its current position, the laser beam 14 strikes the droplet of target material 18 and thereby generates the EUV radiation. In particular, the sound wave 38 from the first loudspeaker 36 ensures that the droplet of target material 18 does not change its position during irradiation of the target material 18 with the laser beam 14. This allows the laser beam 14 to strike the droplet of target material 18 for a longer irradiation time, resulting in a higher yield of EUV radiation.

[0081] The manipulation device 34 has a second focusing unit 48 in the form of a Fresnel zone plate. The second focusing unit 48 is arranged such that the sound wave 42 of the second loudspeaker 40 is focused into the target area 24. This focuses the sound wave 42 of the second loudspeaker 40 onto the target material 18.

[0082] By irradiating the droplet of target material 18 with the laser beam 14, the droplet deforms along a propagation direction of the laser beam. To counteract this deformation, the sound wave 42 of the second loudspeaker 40 is directed onto the droplet of target material 18 by means of the second focusing unit 48. The second loudspeaker 40 and the second focusing unit 48 are arranged in the interior space 22 such that a propagation direction 50 of the sound wave 42 of the second loudspeaker 40, in particular immediately before it strikes the droplet of target material 18, is at least partially opposite to a propagation direction of the laser beam 14, in particular immediately before it strikes the droplet of target material 18.

[0083] In the embodiment shown in Fig. 1, the propagation direction 50 of the sound wave 42 of the second loudspeaker 40 can be composed of a first directional component 52 and a second directional component 54. The first directional component 52 is aligned parallel to the propagation direction of the laser beam 14, particularly immediately before it strikes the droplet of the target material 18. The second directional component 54 is aligned opposite to the propagation direction of the laser beam 14, particularly immediately before it strikes the droplet of the target material 18. This counteracts, and in particular compensates for, any deformation of the droplet of the target material 18 caused by irradiation with the laser beam 14 by means of the sound wave 42 of the second loudspeaker 40.In other words, the sound wave 42 of the second loudspeaker 40 counteracts an unwanted change in the shape of the droplet of the target material 18.

[0084] To direct the sound wave 38 of the first loudspeaker 36 and the sound wave 42 of the second loudspeaker 40 onto the droplet of the target material 18, the manipulation device has a control unit 56 and a detector 58. The control unit 56 is designed as a computer and the detector 58 is designed as a camera.

[0085] The detector 58 detects the actual position and shape of the droplet of the target material 18 in the target area 24 by creating image data, for example in the form of a photograph, of the droplet in the target area 24. The control unit 56 analyzes the image data. Based on the actual position and shape of the droplet of the target material 18 detected by the detector 58, the control unit 56 determines whether it deviates from a target shape and position. If a deviation is detected, the control unit 56 controls the first loudspeaker 36, the second loudspeaker 40, the first focusing unit 46, and the second focusing unit 48 in such a way as to minimize the deviation.

[0086] After irradiating the droplet of target material 18 with the laser beam 14 and generating EUV radiation, the control unit 56 controls the first loudspeaker 36, the second loudspeaker 40, the first focusing unit 46 and the second focusing unit 48 in such a way that the droplet of target material 18 is moved into a catching device 60 of the arrangement 16.

[0087] The trapping device 60 is designed as a container. The trapping device 60 is arranged in the interior space 22. The trapping device 60 is arranged outside the target area 24.

[0088] The capture device 60 is designed to capture and store the droplet of target material 18 used for generating EUV radiation after the EUV radiation has been generated. This prepares the target area 42 for a subsequent droplet of target material 18. In particular, this ensures that the subsequent generation of EUV radiation by the subsequent droplet of target material 18 is not disturbed or impaired by the previously used droplet of target material 18.

[0089] In a further embodiment not shown, the manipulation device can additionally or alternatively include two light sources for generating light beams for shaping and / or positioning the droplet of the target material, in particular by optical levitation, in addition to or as an alternative to the two loudspeakers 36, 40.

[0090] Fig. 2 shows an exemplary sequence of a method for generating EUV radiation with a previously described system 10 from Fig. 1.

[0091] The process comprises the following steps: a) introducing the target material 18 into the target area 24 of the target chamber 20 by means of the introduction device 26; b) shaping and / or positioning the target material 18 in the target area 24 by means of the manipulation device 34 by directing at least one sound wave 38, 42 onto the target material 18; and c) generating EUV radiation by irradiating the target material 18 with the laser beam 14. Fig. 3 shows an exemplary sequence of a manufacturing process for producing microchips or semiconductor intermediates with a previously described system 10 from Fig. 1 and with the process steps of the previously described process from Fig. 2.

[0092] In addition to the steps of the method according to Fig. 2, the method includes the following steps: a2) Directing the generated EUV radiation onto a semiconductor material; b2) Forming a

[0093] Structuring in the semiconductor material using EUV radiation directed at it.

Claims

Patent claims 1. Arrangement (16) for generating EUV radiation or for operating nuclear fusion by irradiating a target material (18) with a laser beam (14), comprising: a target chamber (20) having an interior (22) with a target area (24) for irradiating the target material (18) with the laser beam (14), an insertion device (26) for introducing the target material (18) into the target area (24), and a manipulation device (34) for shaping and / or positioning the target material (18) in the target area (24).

2. Arrangement (16) according to claim 1, wherein the manipulation device (34) is configured to shape and / or position the target material (18) in the target area (24) by directing a sound wave (38, 42) and / or a light beam onto the target material (18).

3. Arrangement (16) according to claim 2, wherein the manipulation device (34) has a loudspeaker (36, 40) for emitting the sound wave (38, 42), and / or wherein the manipulation device (34) has a light source for generating the light beam.

4. Arrangement (16) according to claim 2 or 3, wherein the manipulation device (34) has a focusing unit (46, 48) for focusing the sound wave (38, 42) and / or the light beam onto the target material (18).

5. Arrangement (16) according to claim 4, wherein the focusing unit (46, 48) for focusing the sound wave (38, 42) has a Fresnel zone plate, and / or wherein the focusing unit (46, 48) for focusing the light beam has a lens.

6. Arrangement (16) according to any one of the preceding claims 2 to 5, wherein the manipulation device (34) is configured to direct the sound wave (38, 42) and / or the light beam onto the target material (18) such that a directional component (52) of a propagation direction (50) of the sound wave (38, 42) before it hits the target material (18) and / or a directional component of a propagation direction of the light beam before it hits the target material (18) is opposite to a directional component of a propagation direction of the laser beam (14) before it hits the target material (18).

7. Arrangement (16) according to one of the preceding claims, wherein the manipulation device (34) has a control device (56) configured to control the shaping and / or positioning of the target material (18) in the target area (24) depending on the introduction of the target material (18) into the target area (24) and / or depending on the irradiation of the target material (18) with the laser beam (14).

8. Arrangement (16) according to one of the preceding claims, wherein the manipulation device (34) has a detector (58) for detecting an actual shape and / or an actual position of the target material (18), wherein the manipulation device (34) is configured to shape and / or position the target material (18) depending on the actual shape and / or actual position of the target material (18) detected by means of the detector (58).

9. Arrangement (16) according to one of the preceding claims, wherein the arrangement (16) comprises a capture device (60) for capturing the target material (18) after the generation of EUV radiation or after the operation of nuclear fusion, wherein the manipulation device (34) is configured to position the target material (18) into the capture device (60), in particular to move it.

10. System (10) for generating EUV radiation or for operating nuclear fusion by irradiating a target material (18) with a laser beam (14), comprising: a laser beam generation arrangement (16) for generating the laser beam (14), and an arrangement (16) according to one of the preceding claims.

11. Method for generating EUV radiation or for carrying out nuclear fusion by irradiating a target material (18) with a laser beam (14), the method comprising the steps: Introducing the target material (18) into a target area (24), Shaping and / or positioning the target material (18) in the target area (24) by directing a sound wave (38, 42) and / or a light beam onto the target material (18), and Generating EUV radiation or operating nuclear fusion by irradiating the target material (18) with the laser beam (14).

12. Method according to claim 11, wherein the direction of the sound wave (38, 42) and / or the light beam onto the target material (18) is carried out depending on the introduction of the target material (18) into the target area (24) and / or on the irradiation of the target material (18) with the laser beam (14).

13. Manufacturing process for producing microchips or semiconductor intermediates for producing microchips, wherein the manufacturing process comprises the steps of a process according to one of claims 11 or 12 and uses an arrangement (16) according to one of claims 1 to 9 or a plant (10) according to claim 10, and wherein the manufacturing process further comprises the following steps: Directing the generated EUV radiation onto a semiconductor material; Forming a structure in the semiconductor material using EUV radiation directed at it.

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