Actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, pattern formation method, and electronic device manufacturing method

Abstract

Provided are: an actinic ray-sensitive or radiation-sensitive resin composition containing a resin (P) having a repeating unit having a silicon atom, and a repeating unit having a group that decomposes due to the action of an alkali developing solution and increases in solubility in the alkali developing solution, and having a weight average molecular weight of 8000 or more, and a resin (A) that is different from the resin (P) and increases in polarity due to the action of an acid; an actinic ray-sensitive or radiation-sensitive film formed from the actinic ray-sensitive or radiation-sensitive resin composition; a pattern formation method using the actinic ray-sensitive or radiation-sensitive resin composition; and an electronic device manufacturing method.

Description

Actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, pattern forming method, and method for manufacturing electronic device

[0001] The present invention relates to an actinic ray- or radiation-sensitive resin composition, an actinic ray- or radiation-sensitive film, a pattern forming method, and a method for manufacturing an electronic device. More specifically, the present invention relates to an actinic ray- or radiation-sensitive resin composition, a resist film, a pattern forming method, and a method for manufacturing an electronic device that can be suitably used in an ultra-microlithography process applicable to processes for manufacturing VLSI (Large Scale Integration) and high-capacity microchips, processes for creating molds for nanoimprinting, and processes for manufacturing high-density information recording media, as well as other photofabrication processes.

[0002] Conventionally, in the manufacturing process of semiconductor devices such as ICs (Integrated Circuits) and LSIs (Large Scale Integration), microfabrication is performed by lithography using resist compositions. In recent years, with the increasing integration density of integrated circuits, there has been a demand for ultrafine pattern formation in the submicron or quarter-micron range. Accordingly, there has been a trend toward shorter exposure wavelengths, from g-line to i-line and then to KrF excimer laser light, and currently, exposure machines using ArF excimer lasers with a wavelength of 193 nm as a light source have been developed. Furthermore, as a technique for further improving resolution, the so-called immersion method, in which a high refractive index liquid (hereinafter also referred to as "immersion liquid") is filled between the projection lens and the sample, has been developed.

[0003] Currently, in addition to excimer laser light, lithography using electron beams (EB), X-rays, extreme ultraviolet rays (EUV), etc. is also being developed. Accordingly, resist compositions that are effectively sensitive to various types of actinic rays or radiation have been developed.

[0004] Patent Document 1 describes a positive resist composition that contains (A) a resin that does not contain silicon atoms and whose solubility in an alkaline developer increases due to the action of an acid, (B) a compound that generates an acid when irradiated with actinic rays or radiation, (C) a silicon-containing resin that has at least one specific group, and (D) a solvent. Patent Document 2 describes a pattern formation method including: (a) a step of forming a film on a substrate using an actinic ray- or radiation-sensitive resin composition containing (A) a resin that decomposes under the action of an acid to change its solubility in a developer, and (C) a resin that has one or more groups selected from the group consisting of a fluorine atom, a group having a fluorine atom, a group having a silicon atom, an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group, an aromatic ring group substituted with at least one alkyl group, and an aromatic ring group substituted with at least one cycloalkyl group; (b) a step of forming a topcoat layer on the film using a topcoat composition containing a resin (T); (c) a step of exposing the film having the topcoat layer to actinic rays or radiation; and (d) a step of developing the film having the topcoat layer after the exposure to form a pattern.

[0005] Japanese Patent Publication No. 2007-304545 Japanese Patent Publication No. 2014-215541

[0006] Recently, the performance requirements for resist compositions have become increasingly stringent. In particular, there is a demand for improvements in development defects that occur when forming fine patterns, and in the film thickness uniformity of resist films formed from the resist compositions.

[0007] An object of the present invention is to provide an actinic ray-sensitive or radiation-sensitive resin composition that suppresses development defects and has excellent film thickness uniformity in the formation of a fine pattern. Another object of the present invention is to provide an actinic ray-sensitive or radiation-sensitive film formed from the actinic ray-sensitive or radiation-sensitive resin composition, a pattern formation method using the actinic ray-sensitive or radiation-sensitive resin composition, and a method for manufacturing an electronic device.

[0008] The present inventors have found that the above problems can be solved by the following configuration.

[0009] [1] An actinic ray-sensitive or radiation-sensitive resin composition containing: a resin (P) having a weight-average molecular weight of 8,000 or more, the resin (P) having a repeating unit having a silicon atom and a repeating unit having a group that is decomposed by the action of an alkaline developer and thereby increases the solubility in the alkaline developer; and a resin (A) different from the resin (P), the polarity of which increases by the action of an acid.

[0010] [2] The actinic ray-sensitive or radiation-sensitive resin composition according to [1], wherein the resin (P) has a repeating unit represented by the following general formula (1) or the following general formula (2):

[0011]

[0012] In general formula (1), X １ represents a hydrogen atom, a halogen atom, or an alkyl group. １ represents a hydrogen atom or a substituent. １ represents an organic group containing a silicon atom. ２ represents a hydrogen atom, a halogen atom, or an alkyl group. ２ represents a hydrogen atom or a substituent. ２ represents an aromatic hydrocarbon group. ２ represents an organic group containing a silicon atom. ２ and Ar ２ may be bonded to each other to form a ring. n represents a positive integer. When n is 2 or more, a plurality of Y ２ may be the same as or different from each other.

[0013] [3] The actinic ray-sensitive or radiation-sensitive resin composition according to [1] or [2], wherein the resin (P) has a repeating unit represented by the following general formula (3) or the following general formula (4):

[0014]

[0015] In general formula (3), X ３ represents a hydrogen atom, a halogen atom, or an alkyl group. ３１ represents a divalent linking group. ３１ , R ３２ , R ３３each independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, an alkenyl group, an alkoxy group, or an organic group containing a silicon atom. ３１ , R ３２ , R ３３ When all of R represent alkyl groups, R ３１ and R ３２ and R ３３ In the general formula (4), the total number of carbon atoms in X is 4 or more. ４ represents a hydrogen atom, a halogen atom, or an alkyl group. ４ represents an aromatic hydrocarbon group. ４１ represents a single bond or a divalent linking group. ４１ , R ４２ , R ４３ each independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, an alkenyl group, an alkoxy group, or an organic group containing a silicon atom. n4 represents a positive integer. When n4 is 2 or more, a plurality of -L ４１ -Si(R ４１ ) (R ４２ ) (R ４３ ) may be the same or different.

[0016] [4] The actinic ray-sensitive or radiation-sensitive resin composition according to any one of [1] to [3], wherein the group in the resin (P) that decomposes under the action of an alkaline developer to increase the solubility in the alkaline developer has a lactone group. [5] The actinic ray-sensitive or radiation-sensitive resin composition according to any one of [1] to [4], wherein the resin (P) does not have a fluorine atom. [6] The actinic ray-sensitive or radiation-sensitive resin composition according to any one of [1] to [5], wherein the content of the resin (P) is 0.1% by mass or more and less than 10% by mass, based on the total solid content of the actinic ray-sensitive or radiation-sensitive resin composition. [7] The actinic ray-sensitive or radiation-sensitive resin composition according to any one of [1] to [6], wherein the mass content of silicon atoms in the resin (P) is 0.1 to 20.0%. [8] The actinic ray-sensitive or radiation-sensitive resin composition according to any one of [1] to [7], which does not contain a compound having a fluorine atom. [9] An actinic ray-sensitive or radiation-sensitive film formed from the actinic ray-sensitive or radiation-sensitive resin composition according to any one of [1] to [8].

[0017]

[10] A pattern forming method comprising: a step of forming an actinic ray-sensitive or radiation-sensitive film on a substrate using the actinic ray-sensitive or radiation-sensitive resin composition according to any one of items [1] to [8]; a step of exposing the actinic ray-sensitive or radiation-sensitive film; and a step of developing the exposed actinic ray-sensitive or radiation-sensitive film using a developer.

[0018]

[11] The pattern forming method according to

[10] , wherein the developer contains an organic solvent.

[12] A method for producing an electronic device, comprising the pattern forming method according to

[10] or

[11] .

[0019] The present invention can provide an actinic ray-sensitive or radiation-sensitive resin composition that suppresses development defects and has excellent film thickness uniformity in the formation of a fine pattern. The present invention can also provide an actinic ray-sensitive or radiation-sensitive film formed from the actinic ray-sensitive or radiation-sensitive resin composition, a pattern formation method using the actinic ray-sensitive or radiation-sensitive resin composition, and a method for manufacturing an electronic device.

[0020] The present invention will be described in detail below. The following description of the components will be based on representative embodiments of the present invention, but the present invention is not limited to such embodiments.

[0021] In this specification, "actinic rays" or "radiation" refers to, for example, the bright line spectrum of a mercury lamp, far ultraviolet rays typified by excimer lasers, extreme ultraviolet rays (EUV), X-rays, soft X-rays, and electron beams (EB). In this specification, "light" refers to actinic rays or radiation. Unless otherwise specified, in this specification, "exposure" includes not only exposure using the bright line spectrum of a mercury lamp, far ultraviolet rays typified by excimer lasers, extreme ultraviolet rays, X-rays, and EUV, but also drawing using particle beams such as electron beams and ion beams. In this specification, the word "to" is used to mean that the numerical values ​​before and after it are included as the lower and upper limits.

[0022] In this specification, (meth)acrylate refers to at least one of acrylate and methacrylate, and (meth)acrylic acid refers to at least one of acrylic acid and methacrylic acid.

[0023] In this specification, the weight average molecular weight (Mw), number average molecular weight (Mn), and dispersity (also referred to as molecular weight distribution) (Mw / Mn) of a resin are defined as polystyrene-equivalent values ​​measured by gel permeation chromatography (GPC) using a GPC apparatus (HLC-8120GPC manufactured by Tosoh Corporation) (solvent: tetrahydrofuran, flow rate (sample injection amount): 10 μL, column: TSK gel Multipore HXL-M manufactured by Tosoh Corporation, column temperature: 40° C., flow rate: 1.0 mL / min, detector: differential refractive index detector).

[0024] In the description of groups (atomic groups) in this specification, unless contrary to the spirit of the present invention, notations that do not specify whether they are substituted or unsubstituted include groups that contain a substituent as well as groups that do not have a substituent. For example, the term "alkyl group" includes not only alkyl groups that do not have a substituent (unsubstituted alkyl groups) but also alkyl groups that have a substituent (substituted alkyl groups). Furthermore, the term "organic group" in this specification refers to a group containing at least one carbon atom. Unless otherwise specified, a monovalent substituent is preferred as the substituent. Examples of the substituent include monovalent non-metallic atomic groups excluding hydrogen atoms, which can be selected, for example, from the following substituents T:

[0025] (Substituent T) Examples of the substituent T include halogen atoms such as a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom; alkoxy groups such as a methoxy group, an ethoxy group, and a tert-butoxy group; a cycloalkyloxy group; an aryloxy group such as a phenoxy group and a p-tolyloxy group; an alkoxycarbonyl group such as a methoxycarbonyl group and a butoxycarbonyl group; a cycloalkyloxycarbonyl group; an aryloxycarbonyl group such as a phenoxycarbonyl group; an acyloxy group such as an acetoxy group, a propionyloxy group, and a benzoyloxy group; an acetyl group, a benzoyl group, an isobutyryl group, Examples of the substituent T include acyl groups such as acryloyl, methacryloyl, and methoxalyl; sulfanyl groups; alkylsulfanyl groups such as methylsulfanyl and tert-butylsulfanyl; arylsulfanyl groups such as phenylsulfanyl and p-tolylsulfanyl; alkyl groups; alkenyl groups; cycloalkyl groups; aryl groups; aromatic heterocyclic groups; hydroxy groups; carboxyl groups; formyl groups; sulfo groups; cyano groups; alkylaminocarbonyl groups; arylaminocarbonyl groups; sulfonamide groups; silyl groups; amino groups; carbamoyl groups; etc. In addition, when these substituents can further have one or more substituents, examples of the substituent T also include groups having one or more substituents selected from the above-mentioned substituents as the further substituents (for example, monoalkylamino groups, dialkylamino groups, arylamino groups, trifluoromethyl groups, etc.).

[0026] In this specification, the bonding direction of a divalent group is not limited unless otherwise specified. For example, when Y is -COO- in a compound represented by the formula "X-Y-Z", Y may be -CO-O- or -O-CO-. The compound may be either "X-CO-O-Z" or "X-O-CO-Z".

[0027] In this specification, the acid dissociation constant (pKa) refers to the pKa in an aqueous solution, and specifically, is a value determined by calculation using the following software package 1 based on a database of Hammett's substituent constants and known literature values. All pKa values ​​described in this specification are values ​​determined by calculation using this software package. Software package 1: Advanced Chemistry Development (ACD / Labs) Software V8.14 for Solaris (1994-2007 ACD / Labs).

[0028] The pKa can also be calculated by molecular orbital calculation. A specific method for this is to calculate the pKa of H in an aqueous solution based on the thermodynamic cycle. ＋ One method is to calculate the dissociation free energy. ＋ The dissociation free energy can be calculated by, for example, DFT (density functional theory), but various other methods have been reported in the literature, and the method is not limited to these. There are several software programs that can perform DFT, and Gaussian 16 is an example.

[0029] In this specification, pKa refers to a value calculated based on a database of Hammett's substituent constants and publicly known literature values ​​using software package 1, as described above, but if pKa cannot be calculated by this method, a value obtained by Gaussian 16 based on DFT (density functional theory) will be adopted. In this specification, pKa refers to "pKa in aqueous solution" as described above, but if pKa in aqueous solution cannot be calculated, "pKa in dimethyl sulfoxide (DMSO) solution" will be adopted.

[0030] In this specification, the term "solid content" refers to components that form an actinic ray-sensitive or radiation-sensitive film (preferably a resist film) formed using the actinic ray-sensitive or radiation-sensitive resin composition, and does not include solvents. Furthermore, any component that forms an actinic ray-sensitive or radiation-sensitive film (preferably a resist film) formed using the actinic ray-sensitive or radiation-sensitive resin composition is considered to be a solid content even if it is in a liquid state.

[0031] <Actinic ray-sensitive or radiation-sensitive resin composition> The actinic ray-sensitive or radiation-sensitive resin composition of the present invention (also referred to as "the composition of the present invention") is an actinic ray-sensitive or radiation-sensitive resin composition containing: a resin (P) that contains a repeating unit having a silicon atom and a repeating unit having a group that is decomposed by the action of an alkaline developer and thereby increases its solubility in the alkaline developer, and that has a weight-average molecular weight of 8,000 or more; and a resin (A) that is different from the resin (P) and whose polarity increases by the action of an acid.

[0032] The mechanism by which the composition of the present invention suppresses development defects and provides excellent film thickness uniformity in the formation of fine patterns is not clear, but the inventors have hypothesized it as follows. However, the present invention is not limited in any way by the hypothesized mechanism below. First, generally, when a pattern is formed by exposing and developing an actinic ray- or radiation-sensitive film formed from an actinic ray- or radiation-sensitive resin composition, the light irradiated to the film attenuates as it advances in the film depth direction, so the surface layer of the film tends to receive a higher exposure dose than the deeper layers of the film. As a result, the reaction due to exposure may vary in the film thickness direction, making it difficult to obtain the intended pattern. In view of this phenomenon, it is conceivable to adopt a technique of adding a hydrophobic resin to the actinic ray- or radiation-sensitive resin composition. The addition of a hydrophobic resin facilitates uneven distribution of the hydrophobic resin in the surface layer of the actinic ray- or radiation-sensitive film. By utilizing this, the increase in the development rate in the surface layer where the exposure-induced reaction has progressed efficiently can be suppressed, thereby increasing the uniformity of the development rate in the film thickness direction, and as a result, the formation of the intended pattern (with a good shape, etc.) can be expected. Fluorine-based resins are well known as such hydrophobic resins. Meanwhile, the composition of the present invention contains a resin (P) having a repeating unit containing a silicon atom. Here, the silicon atom in the resin (P) has the function of imparting hydrophobicity to the resin. Therefore, the actinic ray- or radiation-sensitive resin composition of the present invention contains a so-called hydrophobic resin, and therefore the intended pattern can be easily obtained. According to the inventors' studies, since fluorine-based resins are also so-called hydrophobic resins, the addition of a fluorine-based resin facilitates the formation of the intended pattern. However, when the actinic ray- or radiation-sensitive resin composition containing the resin (P) of the present invention was used, extremely good results were obtained in terms of development defects and film thickness uniformity. This is presumably because silicon atoms tend to be less water-repellent than fluorine atoms, and therefore the occurrence of development defects and deterioration in film thickness uniformity that may result from the presence of fluorine atoms, which have high water-repellency, were suppressed.

[0033] In addition, the resin (P) is not only a resin having silicon atoms, but also has a repeating unit having a group that decomposes under the action of alkaline developer and increases its solubility in alkaline developer.The inventors have found that by having the resin (P) have such a structure, it can further suppress the occurrence of development defects and the deterioration of film thickness uniformity.The reason for this is not clear in detail, but it is presumed that the existence of the group that decomposes under the action of alkaline developer and increases its solubility in alkaline developer can improve the polarity of the exposed part of the film (in positive development using alkaline developer, the development removability of the exposed part of the film is improved, and in negative development using organic developer, the development removability of the exposed part of the film is reduced), etc., thus the occurrence of development defects is further suppressed, and the deterioration of film thickness uniformity is also further suppressed.

[0034] Furthermore, the weight-average molecular weight of the resin (P) is 8000 or more. The inventors have found that this configuration can further suppress deterioration in film thickness uniformity. Although the reason for this is not clear in detail, it is presumed that by making the weight-average molecular weight of the resin (P) 8000 or more, aggregation of the resin (P) due to interactions between hydrophilic moieties or hydrophobic moieties contained in the resin (P) is less likely to occur as a result of the hydrophilic moieties or hydrophobic moieties being less likely to be unevenly distributed within the resin (P), and therefore deterioration in film thickness uniformity is further suppressed.

[0035] The composition of the present invention is typically a resist composition, and may be either a positive resist composition or a negative resist composition. The composition of the present invention may be a resist composition for alkali development or a resist composition for organic solvent development. The composition of the present invention may be either a chemically amplified resist composition or a non-chemically amplified resist composition. The composition of the present invention is preferably a chemically amplified resist composition. An actinic ray-sensitive or radiation-sensitive film can be formed using the composition of the present invention. The actinic ray-sensitive or radiation-sensitive film formed using the composition of the present invention is typically a resist film. First, the various components of the composition of the present invention will be described in detail below.

[0036] [Resin (P)] The resin (P) contained in the composition of the present invention will be described below. The resin (P) is a resin (hereinafter also referred to as "resin (P)") that has a weight average molecular weight of 8,000 or more and that has a repeating unit having a silicon atom and a repeating unit having a group that decomposes when exposed to an alkaline developer, thereby increasing the solubility in the alkaline developer.

[0037] (Repeating unit having a silicon atom) The repeating unit having a silicon atom (hereinafter also referred to as "repeating unit (a1)") is not particularly limited as long as it has a silicon atom, but examples thereof include repeating units represented by the following general formula (1) or (2): The resin (P) preferably has a repeating unit represented by the following general formula (1) or (2):

[0038]

[0039] In general formula (1), X １ represents a hydrogen atom, a halogen atom, or an alkyl group. １ represents a hydrogen atom or a substituent. １ represents an organic group containing a silicon atom. ２ represents a hydrogen atom, a halogen atom, or an alkyl group. ２ represents a hydrogen atom or a substituent. ２ represents an aromatic hydrocarbon group. ２ represents an organic group containing a silicon atom. ２ and Ar ２ may be bonded to each other to form a ring. n represents a positive integer. When n is 2 or more, a plurality of Y ２ may be the same as or different from each other.

[0040] X １ The halogen atom in X may be a fluorine atom, a chlorine atom, a bromine atom, or an iodine atom. １ The alkyl group of X is not particularly limited, but may be linear or branched, and is preferably an alkyl group having 1 to 12 carbon atoms, more preferably an alkyl group having 1 to 6 carbon atoms, and even more preferably an alkyl group having 1 to 4 carbon atoms. １The alkyl group of X may have a substituent. １ preferably represents a hydrogen atom or an alkyl group.

[0041] R １ The substituent of X is not particularly limited, but examples thereof include an alkyl group, a halogen atom, and an alkoxy group. １ The preferred ranges are the same as those of the alkyl group in R. Examples of the halogen atom include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom. The alkoxy group may be linear or branched, and is preferably an alkoxy group having 1 to 10 carbon atoms, more preferably an alkoxy group having 1 to 6 carbon atoms. R １ preferably represents a hydrogen atom.

[0042] Y １ represents an organic group containing a silicon atom. The number of carbon atoms in the organic group containing a silicon atom is not particularly limited, but is, for example, 1 to 30. The organic group containing a silicon atom may have a heteroatom such as an oxygen atom or a nitrogen atom, and may also contain two or more silicon atoms.

[0043] X ２ The halogen atom in X may be a fluorine atom, a chlorine atom, a bromine atom, or an iodine atom. ２ The alkyl group of X is not particularly limited, but may be linear or branched, and is preferably an alkyl group having 1 to 12 carbon atoms, more preferably an alkyl group having 1 to 6 carbon atoms, and even more preferably an alkyl group having 1 to 4 carbon atoms. ２ The alkyl group of X may have a substituent. ２ preferably represents a hydrogen atom or an alkyl group.

[0044] R ２ The substituent of X is not particularly limited, but examples thereof include an alkyl group, a halogen atom, and an alkoxy group. ２The preferred ranges are the same as those of the alkyl group in R. Examples of the halogen atom include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom. The alkoxy group may be linear or branched, and is preferably an alkoxy group having 1 to 10 carbon atoms, more preferably an alkoxy group having 1 to 6 carbon atoms. R ２ preferably represents a hydrogen atom.

[0045] Ar ２ The aromatic hydrocarbon group may be monocyclic or polycyclic. The aromatic hydrocarbon in the aromatic hydrocarbon group is not particularly limited, but preferably has 6 to 30 carbon atoms, more preferably 6 to 14 carbon atoms. Examples of aromatic hydrocarbons include a benzene ring, a naphthalene ring, and an anthracene ring. The aromatic hydrocarbon group may further have a substituent, and examples of the substituent include the above-mentioned substituent T. Examples of the substituent include a halogen atom, an alkoxy group (which may be linear or branched, and preferably has 1 to 6 carbon atoms), or a hydroxy group. R ２ and Ar ２ may be bonded to each other to form a ring. The ring formed is not particularly limited.

[0046] Y ２ represents an organic group containing a silicon atom. The number of carbon atoms in the organic group containing a silicon atom is not particularly limited, but is, for example, 1 to 30. The organic group containing a silicon atom may have a heteroatom such as an oxygen atom or a nitrogen atom, and may also contain two or more silicon atoms.

[0047] n represents a positive integer. The upper limit of n is not particularly limited, but is, for example, 5. n preferably represents an integer of 1 to 3, and more preferably represents 1 or 2. When n is 2 or more, a plurality of Y ２ may be the same as or different from each other.

[0048] Y １ -L preferably represents a group represented by the following general formula (B1): １ -Y １１ (B1)

[0049] In general formula (B1), L１ represents a divalent linking group. １１ represents an organic group containing a silicon atom.

[0050] L １ Examples of the divalent linking group include an alkylene group, a cycloalkylene group, an arylene group, —O—, —CO—, —S—, —SO—, and —SO ２ -, -N(R Ｎ )-, a lactone group, a sultone group, or a divalent linking group formed by combining two or more of these groups. Ｎ represents a hydrogen atom or an alkyl group (which may be linear or branched, and preferably has 1 to 6 carbon atoms). The alkylene group may be either linear or branched. The number of carbon atoms in the alkylene group is not particularly limited, but preferably 1 to 10. The cycloalkylene group may be a monocyclic cycloalkylene group or a polycyclic cycloalkylene group. The number of carbon atoms in the cycloalkylene group is not particularly limited, but preferably 3 to 20, and more preferably 5 to 15. The number of carbon atoms in the arylene group is not particularly limited, but preferably 6 to 20, and more preferably 6 to 10. As the lactone group and sultone group, for example, a group obtained by removing two hydrogen atoms from the ring member atoms constituting the lactone structure or sultone structure in any of the lactone structures represented by formulae (LC1-1) to (LC1-21) and the sultone structures represented by formulae (SL1-1) to (SL1-3) described below is preferred. The alkylene group, cycloalkylene group, and arylene group may have a substituent, and examples of the substituent include the above-mentioned substituent T. The substituent may have -O-, -CO-, or a group formed by combining these. In addition, the substituent may be a group that has a silicon atom and is eliminated by the action of an acid or a base. The silicon atom-containing group that is eliminated by the action of an acid or a base will be described later.

[0051] L １ Preferred embodiments of the group include —O—, —O-alkylene group, —O-arylene group, —O-alkylene group-arylene group, —O-alkylene group-COO—, and —O-lactone ring group-COO—.

[0052] Y１１ is not particularly limited as long as it contains a silicon atom, but is preferably —Si(R Ａ ) (R Ｂ ) (R Ｃ ) or a group having a silicon atom that is eliminated by the action of an acid or a base. Ａ , R Ｂ , and R Ｃ R each independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, an alkenyl group, an alkoxy group, or an organic group containing a silicon atom. Ａ , R Ｂ , and R Ｃ The alkyl group of R may be linear or branched, and is preferably an alkyl group having 1 to 10 carbon atoms, more preferably an alkyl group having 1 to 6 carbon atoms. Ａ , R Ｂ , and R Ｃ The cycloalkyl group of R may be monocyclic or polycyclic, and is preferably a cycloalkyl group having 3 to 15 carbon atoms, more preferably a cycloalkyl group having 3 to 10 carbon atoms. Ａ , R Ｂ , and R Ｃ The aryl group in R may be monocyclic or polycyclic, and is preferably an aryl group having 6 to 14 carbon atoms, more preferably an aryl group having 6 to 10 carbon atoms. Ａ , R Ｂ , and R Ｃ The alkenyl group in R may be linear or branched, and is preferably an alkenyl group having 2 to 10 carbon atoms, more preferably an alkenyl group having 2 to 6 carbon atoms. Ａ , R Ｂ , and R Ｃ The alkoxy group may be linear or branched, and is preferably an alkoxy group having 1 to 10 carbon atoms, more preferably an alkoxy group having 1 to 6 carbon atoms.

[0053] R Ａ , R Ｂ , and R ＣThe silicon atom-containing organic group is preferably, for example, an organic group having 1 to 20 carbon atoms. The silicon atom-containing organic group may contain two or more silicon atoms. In one preferred embodiment, the silicon atom-containing organic group is represented by the formula: —OSiR Ａ５１ R Ｂ５１ R Ｃ５１ or a group represented by —SiR Ａ５１ R Ｂ５１ R Ｃ５１ It is preferable that R Ａ５１ , R Ｂ５１ , R Ｃ５１ R each independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, an alkenyl group, or an alkoxy group. Ａ５１ , R Ｂ５１ , and R Ｃ５１ The alkyl group, cycloalkyl group, aryl group, alkenyl group, and alkoxy group are each represented by R Ａ , R Ｂ , and R Ｃ The preferred ranges are the same as those of the alkyl group, cycloalkyl group, aryl group, alkenyl group, and alkoxy group.

[0054] Y １１ The groups which have a silicon atom and which are cleaved by the action of an acid or a base are described below. Examples of the groups which are cleaved by the action of an acid (groups which have a silicon atom and which are cleaved by the action of an acid) include groups represented by formulae (A1) to (A5). Formula (A1): —Si(R Ａ１ ) (R Ａ２ ) (R Ａ３ ) Formula (A2): -C(=O)OSi(R Ａ１ ) (R Ａ２ ) (R Ａ３ ) Formula (A3): -C(R ３６Ａ ) (R ３７Ａ ) (OR ３８Ａ ) Formula (A4): -C(R ４６Ａ ) (R ４７Ａ )-L Ａ１ -Si(R Ａ１ ) (R Ａ２ ) (R Ａ３ Formula (A5): A group represented by the following formula:

[0055]

[0056] In formula (A1), formula (A2), and formula (A4), R Ａ１ ~R Ａ３ R each independently represents an alkyl group, a cycloalkyl group, an alkenyl group, an alkoxy group, an aryl group, or an organic group containing a silicon atom. Ａ１ ~R Ａ３ The two may be bonded to form a monocycle or polycycle. The organic group containing a silicon atom is —Si(R Ａ１１ ) (R Ａ１２ ) (R Ａ１３ ) or a group represented by the above formula (A4). Ａ１１ ~R Ａ１３ R each independently represents an alkyl group, a cycloalkyl group, an alkenyl group, an alkoxy group, or an aryl group. Ａ１１ ~R Ａ１３ may be bonded to form a monocyclic or polycyclic ring.

[0057] R Ａ１ ~R Ａ３ , R Ａ１１ ~R Ａ１３ The alkyl group in R may be linear or branched, and is preferably an alkyl group having 1 to 8 carbon atoms, such as a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, or a t-butyl group, and more preferably an alkyl group having 1 to 5 carbon atoms. Ａ１ ~R Ａ３ , R Ａ１１ ~R Ａ１３ The cycloalkyl group may be monocyclic or polycyclic, and is preferably a monocyclic cycloalkyl group such as a cyclopentyl group or a cyclohexyl group, or a polycyclic cycloalkyl group such as a norbornyl group, a tetracyclodecanyl group, a tetracyclododecanyl group, or an adamantyl group. The number of carbon atoms in the cycloalkyl group is not particularly limited, but is preferably 3 to 14. Ａ１ ~R Ａ３ , R Ａ１１ ~R Ａ１３ The alkenyl group in R may be linear or branched, and examples thereof include alkenyl groups having 2 to 6 carbon atoms, with vinyl groups being preferred. Ａ１ ~RＡ３ , R Ａ１１ ~R Ａ１３ The alkoxy group of R may be linear or branched, and examples thereof include alkoxy groups having 1 to 6 carbon atoms. Ａ１ ~R Ａ３ , R Ａ１１ ~R Ａ１３ The aryl group may be monocyclic or polycyclic, and is preferably an aryl group having 6 to 14 carbon atoms, such as a phenyl group, a naphthyl group, and an anthryl group.

[0058] In addition, R Ａ１ ~R Ａ３ When all of R are alkyl groups, Ａ１ ~R Ａ３ At least two of R are preferably methyl groups. Ａ１ ~R Ａ３ each independently preferably represents a linear or branched alkyl group, and R Ａ１ ~R Ａ３ More preferably, each independently represents a linear alkyl group.

[0059] R Ａ１ ~R Ａ３ The ring formed by combining these two is preferably a monocyclic or polycyclic ring having a silicon atom as a ring member. Ａ１ ~R Ａ３ The ring formed by combining these two is more preferably a monocyclic ring having 5 to 6 carbon atoms and a silicon atom as a ring member. Ａ１１ ~R Ａ１３ The ring formed by combining these two is preferably a monocyclic or polycyclic ring having a silicon atom as a ring member. Ａ１１ ~R Ａ１３ The ring formed by combining the above two is more preferably a monocyclic ring having 5 to 6 carbon atoms and a silicon atom as a ring member.

[0060] In formula (A3), R ３６Ａ ~R ３７Ａ R each independently represents a hydrogen atom or an organic group. ３８Ａ represents an organic group containing a silicon atom. ３７Ａ and R ３８Ａ may be bonded to each other to form a ring.３６Ａ ~R ３７Ａ Examples of the organic group include an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group, and an alkenyl group. The alkyl group, the cycloalkyl group, the aryl group, and the alkenyl group are each defined as R Ａ１ ~R Ａ３ The preferred ranges are the same as those of the alkyl group, cycloalkyl group, aryl group, and alkenyl group in R. Examples of the aralkyl group include aralkyl groups having 6 to 15 carbon atoms, with a benzyl group being preferred. The alkyl group, cycloalkyl group, aryl group, and aralkyl group may contain a group containing a heteroatom such as an oxygen atom and / or a heteroatom such as a carbonyl group. For example, in the alkyl group, cycloalkyl group, aryl group, and aralkyl group, one or more methylene groups may be replaced with a group containing a heteroatom such as an oxygen atom and / or a heteroatom such as a carbonyl group. R ３６Ａ is also preferably a hydrogen atom.

[0061] R ３８Ａ Examples of the organic group containing a silicon atom include —Si(R Ａ３１ ) (R Ａ３２ ) (R Ａ３３ ) or a group represented by the above formula (A5). Ａ３１ ~R Ａ３３ R each independently represents an alkyl group, a cycloalkyl group, an alkenyl group, an alkoxy group, or an aryl group. Ａ３１ ~R Ａ３３ The alkyl group, cycloalkyl group, alkenyl group, alkoxy group, and aryl group in the above formula (I) are each defined as R Ａ１ ~R Ａ３ The preferred ranges are the same as those of the alkyl group, cycloalkyl group, alkenyl group, alkoxy group, and aryl group.

[0062] In formula (A4), R ４６Ａ ~R ４７Ａ R each independently represents a hydrogen atom or an organic group. ４６Ａ ~R ４７ＡExamples of the organic group include an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group, and an alkenyl group. The alkyl group, the cycloalkyl group, the aryl group, and the alkenyl group are each defined as R Ａ１ ~R Ａ３ The preferred ranges are the same as those of the alkyl group, cycloalkyl group, aryl group, and alkenyl group in the above. Examples of the aralkyl group include aralkyl groups having 6 to 15 carbon atoms, and a benzyl group is preferred.

[0063] In formula (A4), L Ａ１ represents a single bond or an alkylene group. Ａ１ The alkylene group of L may be linear or branched, and examples thereof include alkylene groups having 1 to 6 carbon atoms. Ａ１ preferably represents a single bond.

[0064] In formula (A5), L １１ represents a linear alkylene group having 1 to 3 carbon atoms. １１ R preferably represents a linear alkylene group having 1 or 2 carbon atoms. Ａ２１ ~R Ａ２３ R each independently represents an alkyl group, a cycloalkyl group, an alkenyl group, an alkoxy group, or an aryl group. Ａ２１ ~R Ａ２３ may be bonded to form a monocyclic or polycyclic ring.

[0065] R Ａ２１ ~R Ａ２３ The alkyl group, cycloalkyl group, alkenyl group, alkoxy group, and aryl group in the above R Ａ１ ~R Ａ３ The preferred ranges are the same as those of the alkyl group, cycloalkyl group, alkenyl group, alkoxy group, and aryl group in R. Ａ２１ ~R Ａ２３ The ring formed by combining these two is preferably a monocyclic or polycyclic ring having a silicon atom as a ring member. Ａ２１ ~R Ａ２３ The ring formed by combining the above two is more preferably a monocyclic ring having 5 to 6 carbon atoms and a silicon atom as a ring member.

[0066] Y １１ In the formula (I), the structure containing a group that leaves under the action of an acid (a group that has a silicon atom and leaves under the action of an acid) is preferably a silyl ester structure, a silyl thioester structure, a silyl dithioester structure, a silyl ether structure, a silyl thioether structure, a structure containing silicon atoms linked via an acetal structure, a structure containing silicon atoms linked via a thioacetal structure, a structure containing silicon atoms linked via a dithioacetal structure, a secondary ester structure having a silicon atom, or a tertiary ester structure having a silicon atom, and more preferably a silyl ester structure, a silyl ether structure, a structure containing silicon atoms linked via an acetal structure, a secondary ester structure having a silicon atom, or a tertiary ester structure having a silicon atom.

[0067] Examples of the group that is eliminated by the action of a base (a group that has a silicon atom and is eliminated by the action of a base) include groups represented by formulae (N1) to (N5). Formula (N1): —Si(R Ｎ１ ) (R Ｎ２ ) (R Ｎ３ ) Formula (N2): -C(=O)OSi(R Ｎ１ ) (R Ｎ２ ) (R Ｎ３ ) Formula (N3): -C(R ３６Ｎ ) (R ３７Ｎ ) (OR ３８Ｎ ) Formula (N4): -C(R ４６Ｎ ) (R ４７Ｎ )-L Ａ１Ｎ -Si(R Ｎ１ ) (R Ｎ２ ) (R Ｎ３ Formula (N5): A group represented by the following formula:

[0068]

[0069] In formula (N1), formula (N2), and formula (N4), R Ｎ１ ~R Ｎ３ R each independently represents an alkyl group, a cycloalkyl group, an alkenyl group, an alkoxy group, an aryl group, or an organic group containing a silicon atom. Ｎ１ ~R Ｎ３The two may be bonded to form a monocycle or polycycle. The organic group containing a silicon atom is —Si(R Ｎ１１ ) (R Ｎ１２ ) (R Ｎ１３ ) or a group represented by the above formula (N4). Ｎ１１ ~R Ｎ１３ R each independently represents an alkyl group, a cycloalkyl group, an alkenyl group, an alkoxy group, or an aryl group. Ｎ１１ ~R Ｎ１３ may be bonded to form a monocyclic or polycyclic ring.

[0070] R Ｎ１ ~R Ｎ３ , R Ｎ１１ ~R Ｎ１３ The alkyl group in R may be linear or branched, and is preferably an alkyl group having 1 to 8 carbon atoms, such as a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, or a t-butyl group, and more preferably an alkyl group having 1 to 5 carbon atoms. Ｎ１ ~R Ｎ３ , R Ｎ１１ ~R Ｎ１３ The cycloalkyl group may be monocyclic or polycyclic, and is preferably a monocyclic cycloalkyl group such as a cyclopentyl group or a cyclohexyl group, or a polycyclic cycloalkyl group such as a norbornyl group, a tetracyclodecanyl group, a tetracyclododecanyl group, or an adamantyl group. The number of carbon atoms in the cycloalkyl group is not particularly limited, but is preferably 3 to 14. Ｎ１ ~R Ｎ３ , R Ｎ１１ ~R Ｎ１３ The alkenyl group in R may be linear or branched, and examples thereof include alkenyl groups having 2 to 6 carbon atoms, with vinyl groups being preferred. Ｎ１ ~R Ｎ３ , R Ｎ１１ ~R Ｎ１３ The alkoxy group of R may be linear or branched, and examples thereof include alkoxy groups having 1 to 6 carbon atoms. N１ ~R N３ , R N１１ ~R N１３The aryl group is preferably an aryl group having 6 to 14 carbon atoms, and examples thereof include a phenyl group, a naphthyl group, and an anthryl group.

[0071] In addition, R Ｎ１ ~R Ｎ３ When all of R are alkyl groups, Ｎ１ ~R Ｎ３ At least two of R are preferably methyl groups. Ｎ１ ~R Ｎ３ each independently preferably represents a linear or branched alkyl group, and R Ｎ１ ~R Ｎ３ More preferably, each independently represents a linear alkyl group.

[0072] R Ｎ１ ~R Ｎ３ The ring formed by combining these two is preferably a monocyclic or polycyclic ring having a silicon atom as a ring member. Ｎ１ ~R Ｎ３ The ring formed by combining these two is more preferably a monocyclic ring having 5 to 6 carbon atoms and a silicon atom as a ring member. Ｎ１１ ~R Ｎ１３ The ring formed by combining these two is preferably a monocyclic or polycyclic ring having a silicon atom as a ring member. Ｎ１１ ~R Ｎ１３ The ring formed by combining the above two is more preferably a monocyclic ring having 5 to 6 carbon atoms and a silicon atom as a ring member.

[0073] In formula (N3), R ３６Ｎ ~R ３７Ｎ R each independently represents a hydrogen atom or an organic group. ３８Ｎ represents an organic group containing a silicon atom. ３７Ｎ and R ３８Ｎ may be bonded to each other to form a ring. ３６Ｎ ~R ３７Ｎ Examples of the organic group include an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group, and an alkenyl group. The alkyl group, the cycloalkyl group, the aryl group, and the alkenyl group are each defined as R Ｎ１ ~R Ｎ３The preferred ranges are the same as those of the alkyl group, cycloalkyl group, aryl group, and alkenyl group in R. Examples of the aralkyl group include aralkyl groups having 6 to 15 carbon atoms, with a benzyl group being preferred. The alkyl group, cycloalkyl group, aryl group, and aralkyl group may contain a group containing a heteroatom such as an oxygen atom and / or a heteroatom such as a carbonyl group. For example, in the alkyl group, cycloalkyl group, aryl group, and aralkyl group, one or more methylene groups may be replaced with a group containing a heteroatom such as an oxygen atom and / or a heteroatom such as a carbonyl group. R ３６Ｎ is also preferably a hydrogen atom.

[0074] R ３８Ｎ The organic group containing a silicon atom is not particularly limited, but examples thereof include —Si(R Ｎ３１ ) (R Ｎ３２ ) (R Ｎ３３ ) or a group represented by the above formula (N5). Ｎ３１ ~R Ｎ３３ R each independently represents an alkyl group, a cycloalkyl group, an alkenyl group, an alkoxy group, or an aryl group. Ｎ３１ ~R Ｎ３３ The alkyl group, cycloalkyl group, alkenyl group, alkoxy group, and aryl group in the above R Ｎ１ ~R Ｎ３ The preferred ranges are the same as those of the alkyl group, cycloalkyl group, alkenyl group, alkoxy group, and aryl group.

[0075] In formula (N4), R ４６Ｎ ~R ４７Ｎ Examples of the organic group include an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group, and an alkenyl group. The alkyl group, the cycloalkyl group, the aryl group, and the alkenyl group are each defined as R Ｎ１ ~R Ｎ３ The preferred ranges are the same as those of the alkyl group, cycloalkyl group, aryl group, and alkenyl group in the above. Examples of the aralkyl group include aralkyl groups having 6 to 15 carbon atoms, and a benzyl group is preferred.

[0076] In formula (N4), L Ａ１Ｎ represents a single bond or an alkylene group. Ａ１Ｎ The alkylene group of L may be linear or branched, and examples thereof include alkylene groups having 1 to 6 carbon atoms. Ａ１Ｎ preferably represents a single bond.

[0077] In formula (N5), L Ｎ１１ represents a linear alkylene group having 1 to 3 carbon atoms. Ｎ１１ R preferably represents a linear alkylene group having 1 or 2 carbon atoms. Ｎ２１ ~R Ｎ２３ R each independently represents an alkyl group, a cycloalkyl group, an alkenyl group, an alkoxy group, or an aryl group. Ｎ２１ ~R Ｎ２３ may be bonded to form a monocyclic or polycyclic ring.

[0078] R Ｎ２１ ~R Ｎ２３ The alkyl group, cycloalkyl group, alkenyl group, alkoxy group, and aryl group in the above R Ｎ１ ~R Ｎ３ The preferred ranges are the same as those of the alkyl group, cycloalkyl group, alkenyl group, alkoxy group, and aryl group in R. Ｎ２１ ~R Ｎ２３ The ring formed by combining these two is preferably a monocyclic or polycyclic ring having a silicon atom as a ring member. Ｎ２１ ~R Ｎ２３ The ring formed by combining the above two is more preferably a monocyclic ring having 5 to 6 carbon atoms and a silicon atom as a ring member.

[0079] Y １１ In the formula (I), the structure containing a group that is eliminated by the action of a base (a group that has a silicon atom and is eliminated by the action of a base) is preferably a silyl ester structure, a silyl thioester structure, a silyl dithioester structure, a silyl ether structure, or a silyl thioether structure, and more preferably a silyl ester structure or a silyl ether structure.

[0080] Y ２-L preferably represents a group represented by the following general formula (B2): ２ -Y ２２ (B2)

[0081] In general formula (B2), L ２ represents a single bond or a divalent linking group. ２２ represents an organic group containing a silicon atom.

[0082] L ２ Examples of the divalent linking group include an alkylene group, a cycloalkylene group, an arylene group, —O—, —CO—, —S—, —SO—, and —SO ２ -, -N(R Ｎ１ )-, a lactone group, a sultone group, or a divalent linking group formed by combining two or more of these groups. Ｎ１ represents a hydrogen atom or an alkyl group (which may be linear or branched, and preferably has 1 to 6 carbon atoms). The alkylene group may be either linear or branched. The number of carbon atoms in the alkylene group is not particularly limited, but preferably 1 to 10. The cycloalkylene group may be a monocyclic cycloalkylene group or a polycyclic cycloalkylene group. The number of carbon atoms in the cycloalkylene group is not particularly limited, but preferably 3 to 20, and more preferably 5 to 15. The number of carbon atoms in the arylene group is not particularly limited, but preferably 6 to 20, and more preferably 6 to 10. As the lactone group and sultone group, for example, a group obtained by removing two hydrogen atoms from the ring member atoms constituting the lactone structure or sultone structure in any of the lactone structures represented by formulae (LC1-1) to (LC1-21) and the sultone structures represented by formulae (SL1-1) to (SL1-3) described below is preferred. The alkylene group, cycloalkylene group, and arylene group may have a substituent, and examples of the substituent include the above-mentioned substituent T. As the substituent, a halogen atom or an alkoxy group (for example, an alkoxy group having 1 to 6 carbon atoms, which may be linear or branched) is preferred.

[0083] L ２ Preferred embodiments of the group include a single bond, —COO—, and —O—.

[0084] Y ２２is not particularly limited as long as it contains a silicon atom, but is preferably —Si(R ＡＡ ) (R ＢＢ ) (R ＣＣ ) or a group having a silicon atom that is eliminated by the action of an acid or a base. ＡＡ , R ＢＢ , and R ＣＣ R each independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, an alkenyl group, an alkoxy group, or an organic group containing a silicon atom. ＡＡ , R ＢＢ , and R ＣＣ The alkyl group of R may be linear or branched, and is preferably an alkyl group having 1 to 10 carbon atoms, more preferably an alkyl group having 1 to 6 carbon atoms. ＡＡ , R ＢＢ , and R ＣＣ The cycloalkyl group of R may be monocyclic or polycyclic, and is preferably a cycloalkyl group having 3 to 15 carbon atoms, more preferably a cycloalkyl group having 3 to 10 carbon atoms. ＡＡ , R ＢＢ , and R ＣＣ The aryl group in R may be monocyclic or polycyclic, and is preferably an aryl group having 6 to 14 carbon atoms, more preferably an aryl group having 6 to 10 carbon atoms. ＡＡ , R ＢＢ , and R ＣＣ The alkenyl group in R may be linear or branched, and is preferably an alkenyl group having 2 to 10 carbon atoms, more preferably an alkenyl group having 2 to 6 carbon atoms. ＡＡ , R ＢＢ , and R ＣＣ The alkoxy group may be linear or branched, and is preferably an alkoxy group having 1 to 10 carbon atoms, more preferably an alkoxy group having 1 to 6 carbon atoms.

[0085] R ＡＡ , R ＢＢ , and R ＣＣThe silicon atom-containing organic group is preferably, for example, an organic group having 1 to 20 carbon atoms. The silicon atom-containing organic group may contain two or more silicon atoms. In one preferred embodiment, the silicon atom-containing organic group is represented by the formula: —OSiR ＡＡ１ R ＢＢ１ R ＣＣ１ or a group represented by —SiR ＡＡ１ R ＢＢ１ R ＣＣ１ It is preferable that R ＡＡ１ , R ＢＢ１ , R ＣＣ１ R each independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, an alkenyl group, or an alkoxy group. ＡＡ１ , R ＢＢ１ , and R ＣＣ１ The alkyl group, cycloalkyl group, aryl group, alkenyl group, and alkoxy group are each represented by R ＡＡ , R ＢＢ , and R ＣＣ The preferred ranges are the same as those of the alkyl group, cycloalkyl group, aryl group, alkenyl group, and alkoxy group.

[0086] Y ２２ The group having a silicon atom and being cleaved by the action of an acid or a base is the same as the group Y １１ The preferred ranges are the same as those of the silicon atom-containing group which is eliminated by the action of an acid or a base, and the preferred ranges are also the same.

[0087] In a preferred embodiment, the repeating unit having a silicon atom is a repeating unit represented by the following general formula (11).

[0088] In general formula (11), X １１ represents a hydrogen atom, a halogen atom, or an alkyl group. １１ represents a hydrogen atom or a substituent. １１represents a single bond or an (n11+1)-valent linking group. Ra and L may be bonded to each other to form a ring. A represents a group having a silicon atom that is cleaved by the action of an acid or a base. n11 represents a positive integer. When n11 is 2 or more, multiple As may be the same or different.

[0089] X １１ The alkyl group of X is not particularly limited, and may be linear or branched, and is preferably an alkyl group having 1 to 12 carbon atoms, more preferably an alkyl group having 1 to 6 carbon atoms, and even more preferably an alkyl group having 1 to 3 carbon atoms. １１ The alkyl group of X may have a substituent. １１ preferably represents a hydrogen atom or an alkyl group.

[0090] Ra １１ The substituent of X is not particularly limited, but examples thereof include an alkyl group, a halogen atom, and an alkoxy group. １１ The preferred ranges are the same as those of the alkyl groups in the above. Examples of the halogen atom include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom. Examples of the alkoxy group include linear or branched alkoxy groups having 1 to 6 carbon atoms.

[0091] L １１ Regarding the (n11+1)-valent linking group, the case where n11 is 1 will be described first. １１ Examples of the divalent linking group include an alkylene group, a cycloalkylene group, an arylene group, —O—, —CO—, —S—, —SO—, and —SO ２Examples of the alkylene group include a lactone group, a sultone group, or a divalent linking group formed by combining a plurality of these groups. The alkylene group may be either linear or branched. The number of carbon atoms in the alkylene group is not particularly limited, but is preferably 1 to 10. The cycloalkylene group may be a monocyclic cycloalkylene group or a polycyclic cycloalkylene group. The number of carbon atoms in the cycloalkylene group is not particularly limited, but is preferably 3 to 20, and more preferably 5 to 15. The number of carbon atoms in the arylene group is not particularly limited, but is preferably 6 to 20, and more preferably 6 to 10. As the lactone group and sultone group, for example, a group obtained by removing two hydrogen atoms from the ring member atoms constituting the lactone structure or sultone structure in any of the lactone structures represented by formulae (LC1-1) to (LC1-21) and the sultone structures represented by formulae (SL1-1) to (SL1-3) described below is preferred. The alkylene group, cycloalkylene group, and arylene group may have a substituent, and examples of the substituent include the above-mentioned substituent T. The (n11+1)-valent linking group represents a group obtained by removing (n11-1) hydrogen atoms from a divalent linking group.

[0092] A represents a group having a silicon atom which is cleaved by the action of an acid or a base. The group having a silicon atom which is cleaved by the action of an acid or a base can be the same as the group Y described above. １１ The preferred ranges are the same as those of the silicon atom-containing group which is eliminated by the action of an acid or a base, and the preferred ranges are also the same.

[0093] n11 represents a positive integer. There are no particular limitations on the upper limit of n11, but it is, for example, 5. n11 preferably represents an integer of 1 to 3, and more preferably represents 1 or 2. When n11 is 2 or greater, multiple As may be the same or different from one another.

[0094] In a preferred embodiment, the repeating unit having a silicon atom is preferably a repeating unit represented by the following general formula (3) or (4): The resin (P) preferably has a repeating unit represented by the following general formula (3) or (4).

[0095]

[0096] In general formula (3), X ３ represents a hydrogen atom, a halogen atom, or an alkyl group. ３１ represents a divalent linking group. ３１ , R ３２ , R ３３ each independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, an alkenyl group, an alkoxy group, or an organic group containing a silicon atom. ３１ , R ３２ , R ３３ When all of R represent alkyl groups, R ３１ and R ３２ and R ３３ In the general formula (4), the total number of carbon atoms in X is 4 or more. ４ represents a hydrogen atom, a halogen atom, or an alkyl group. ４ represents an aromatic hydrocarbon group. ４１ represents a single bond or a divalent linking group. ４１ , R ４２ , R ４３ each independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, an alkenyl group, an alkoxy group, or an organic group containing a silicon atom. n4 represents a positive integer. When n4 is 2 or more, a plurality of -L ４１ -Si(R ４１ ) (R ４２ ) (R ４３ ) may be the same or different.

[0097] X ３ The halogen atom in X may be a fluorine atom, a chlorine atom, a bromine atom, or an iodine atom. ３ The alkyl group of X is not particularly limited, but may be linear or branched, and is preferably an alkyl group having 1 to 12 carbon atoms, more preferably an alkyl group having 1 to 6 carbon atoms, and even more preferably an alkyl group having 1 to 4 carbon atoms. ３ The alkyl group of X may have a substituent. ３ preferably represents a hydrogen atom or an alkyl group.

[0098] L ３１Examples of the divalent linking group include an alkylene group, a cycloalkylene group, an arylene group, —O—, —CO—, —S—, —SO—, and —SO ２ Examples of the alkylene group include a lactone group, a sultone group, or a divalent linking group formed by combining a plurality of these groups. The alkylene group may be either linear or branched. The number of carbon atoms in the alkylene group is not particularly limited, but is preferably 1 to 10. The cycloalkylene group may be a monocyclic cycloalkylene group or a polycyclic cycloalkylene group. The number of carbon atoms in the cycloalkylene group is not particularly limited, but is preferably 3 to 20, and more preferably 5 to 15. The number of carbon atoms in the arylene group is not particularly limited, but is preferably 6 to 20, and more preferably 6 to 10. As the lactone group and sultone group, for example, a group obtained by removing two hydrogen atoms from the ring member atoms constituting the lactone structure or sultone structure in any of the lactone structures represented by formulae (LC1-1) to (LC1-21) and the sultone structures represented by formulae (SL1-1) to (SL1-3) described below is preferred. The alkylene group, cycloalkylene group and arylene group may have a substituent, and examples of the substituent include the substituent T described above.

[0099] R ３１ , R ３２ , R ３３ The alkyl group of R may be linear or branched, and is preferably an alkyl group having 1 to 10 carbon atoms, more preferably an alkyl group having 1 to 6 carbon atoms. ３１ , R ３２ , R ３３ The cycloalkyl group of R may be monocyclic or polycyclic, and is preferably a cycloalkyl group having 3 to 15 carbon atoms, more preferably a cycloalkyl group having 3 to 10 carbon atoms. ３１ , R ３２ , R ３３ The aryl group in R may be monocyclic or polycyclic, and is preferably an aryl group having 6 to 14 carbon atoms, more preferably an aryl group having 6 to 10 carbon atoms. ３１ , R ３２ , R ３３The alkenyl group in R may be linear or branched, and is preferably an alkenyl group having 2 to 10 carbon atoms, more preferably an alkenyl group having 2 to 6 carbon atoms. ３１ , R ３２ , R ３３ The alkoxy group may be linear or branched, and is preferably an alkoxy group having 1 to 10 carbon atoms, more preferably an alkoxy group having 1 to 6 carbon atoms.

[0100] R ３１ , R ３２ , R ３３ The silicon atom-containing organic group is preferably, for example, an organic group having 1 to 20 carbon atoms. The silicon atom-containing organic group may contain two or more silicon atoms. In one preferred embodiment, the silicon atom-containing organic group is represented by the formula: —OSiR Ａ６１ R Ｂ６１ R Ｃ６１ or a group represented by —SiR Ａ６１ R Ｂ６１ R Ｃ６１ It is preferable that R Ａ６１ , R Ｂ６１ , R Ｃ６１ R each independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, an alkenyl group, or an alkoxy group. Ａ６１ , R Ｂ６１ , and R Ｃ６１ The alkyl group, cycloalkyl group, aryl group, alkenyl group, and alkoxy group are each represented by R ３１ , R ３２ , and R ３３ The preferred ranges are the same as those of the alkyl group, cycloalkyl group, aryl group, alkenyl group, and alkoxy group in R. ３１ , R ３２ , and R ３３ The alkyl group, cycloalkyl group, aryl group, alkenyl group, and alkoxy group may have a substituent. Examples of the substituent include the substituent T.

[0101] R ３１ , R ３２ , R ３３ When all of R represent alkyl groups, R ３１ and R３２ and R ３３ The total number of carbon atoms in R is 4 or more. When the total number of carbon atoms is 4 or more, the hydrophobic resin (resin (P)) tends to be unevenly distributed in the surface layer, and development defects are further improved. ３１ , R ３２ , R ３３ When the alkyl group of R ３１ and R ３２ and R ３３ The total number of carbon atoms in the above R represents the total number of carbon atoms including those of the substituents. ３１ and R ３２ and R ３３ The total number of carbon atoms in the R is preferably 5 or more, and more preferably 6 or more. ３１ and R ３２ and R ３３ The upper limit of the total number of carbon atoms is not particularly limited, but is, for example, 21.

[0102] R ３１ , R ３２ , R ３３ Preferably, each independently represents an alkyl group, an aryl group, or an organic group containing a silicon atom.

[0103] X ４ The halogen atom in X may be a fluorine atom, a chlorine atom, a bromine atom, or an iodine atom. ４ The alkyl group of X is not particularly limited, but may be linear or branched, and is preferably an alkyl group having 1 to 12 carbon atoms, more preferably an alkyl group having 1 to 6 carbon atoms, and even more preferably an alkyl group having 1 to 4 carbon atoms. ４ The alkyl group of X may have a substituent. ４ preferably represents a hydrogen atom or an alkyl group.

[0104] Ar ４The aromatic hydrocarbon group may be monocyclic or polycyclic. The aromatic hydrocarbon in the aromatic hydrocarbon group is not particularly limited, but preferably has 6 to 30 carbon atoms, and more preferably has 6 to 14 carbon atoms. Examples of the aromatic hydrocarbon include a benzene ring, a naphthalene ring, and an anthracene ring. The aromatic hydrocarbon group may further have a substituent, and examples of the substituent include the above-mentioned substituent T. Examples of the substituent include a halogen atom, an alkoxy group (which may be linear or branched, and preferably has 1 to 6 carbon atoms), or a hydroxy group.

[0105] L ４１ Examples of the divalent linking group include an alkylene group, a cycloalkylene group, an arylene group, —O—, —CO—, —S—, —SO—, and —SO ２ Examples of the alkylene group include a lactone group, a sultone group, or a divalent linking group formed by combining a plurality of these groups. The alkylene group may be either linear or branched. The number of carbon atoms in the alkylene group is not particularly limited, but is preferably 1 to 10. The cycloalkylene group may be a monocyclic cycloalkylene group or a polycyclic cycloalkylene group. The number of carbon atoms in the cycloalkylene group is not particularly limited, but is preferably 3 to 20, and more preferably 5 to 15. The number of carbon atoms in the arylene group is not particularly limited, but is preferably 6 to 20, and more preferably 6 to 10. As the lactone group and sultone group, for example, a group obtained by removing two hydrogen atoms from the ring member atoms constituting the lactone structure or sultone structure in any of the lactone structures represented by formulae (LC1-1) to (LC1-21) and the sultone structures represented by formulae (SL1-1) to (SL1-3) described below is preferred. The alkylene group, cycloalkylene group and arylene group may have a substituent, and examples of the substituent include the substituent T described above.

[0106] L ４１ preferably represents a single bond or —COO—.

[0107] R ４１ , R ４２ , R ４３The alkyl group of R may be linear or branched, and is preferably an alkyl group having 1 to 10 carbon atoms, more preferably an alkyl group having 1 to 6 carbon atoms. ４１ , R ４２ , R ４３ The cycloalkyl group of R may be monocyclic or polycyclic, and is preferably a cycloalkyl group having 3 to 15 carbon atoms, more preferably a cycloalkyl group having 3 to 10 carbon atoms. ４１ , R ４２ , R ４３ The aryl group in R may be monocyclic or polycyclic, and is preferably an aryl group having 6 to 14 carbon atoms, more preferably an aryl group having 6 to 10 carbon atoms. ４１ , R ４２ , R ４３ The alkenyl group in R may be linear or branched, and is preferably an alkenyl group having 2 to 10 carbon atoms, more preferably an alkenyl group having 2 to 6 carbon atoms. ４１ , R ４２ , R ４３ The alkoxy group may be linear or branched, and is preferably an alkoxy group having 1 to 10 carbon atoms, more preferably an alkoxy group having 1 to 6 carbon atoms.

[0108] R ４１ , R ４２ , R ４３ The silicon atom-containing organic group is preferably, for example, an organic group having 1 to 20 carbon atoms. The silicon atom-containing organic group may contain two or more silicon atoms. In one preferred embodiment, the silicon atom-containing organic group is represented by the formula: —OSiR Ａ７１ R Ｂ７１ R Ｃ７１ or a group represented by —SiR Ａ７１ R Ｂ７１ R Ｃ７１ It is preferable that R Ａ７１ , R Ｂ７１ , R Ｃ７１ R each independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, an alkenyl group, or an alkoxy group. Ａ７１ , R Ｂ７１ , and R Ｃ７１The alkyl group, cycloalkyl group, aryl group, alkenyl group, and alkoxy group are each represented by R ４１ , R ４２ , and R ４３ The preferred ranges are the same as those of the alkyl group, cycloalkyl group, aryl group, alkenyl group, and alkoxy group in R. ４１ , R ４２ , and R ４３ The alkyl group, cycloalkyl group, aryl group, alkenyl group, and alkoxy group may have a substituent. Examples of the substituent include the substituent T.

[0109] n4 represents a positive integer. The upper limit of n4 is not particularly limited, but is, for example, 5. n4 preferably represents an integer of 1 to 3, and more preferably 1 or 2. When n4 is 2 or more, a plurality of -L ４１ -Si(R ４１ ) (R ４２ ) (R ４３ ) may be the same or different.

[0110] Specific examples of the repeating unit (a1) are shown below, but the present invention is not limited to these. Me represents a methyl group.

[0111]

[0112]

[0113]

[0114]

[0115] The content of the repeating unit (a1) is preferably 3 mol% or more, more preferably 15 mol% or more, and even more preferably 30 mol% or more, based on all repeating units in the resin (P). The upper limit is preferably 100 mol% or less, more preferably 90 mol% or less, even more preferably 80 mol% or less, and particularly preferably 70 mol% or less, based on all repeating units in the resin (P). The repeating unit (a1) may be used alone, or two or more types may be used. In a preferred embodiment, the content of the repeating unit (a1) is preferably 5 to 50 mol%, more preferably 10 to 50 mol%, based on all repeating units in the resin (P). In a preferred embodiment, the content of the repeating unit (a1) is preferably 70 to 100 mol%, more preferably 70 to 90 mol%, based on all repeating units in the resin (P).

[0116] (Repeating unit having a group that decomposes when exposed to an alkaline developer and increases its solubility in the alkaline developer) The resin (P) has a repeating unit (hereinafter also referred to as "repeating unit (a2)") that has a group that decomposes when exposed to an alkaline developer and increases its solubility in the alkaline developer. The repeating unit (a2) is not particularly limited as long as it has a group that decomposes when exposed to an alkaline developer and increases its solubility in the alkaline developer, but is preferably at least one selected from the group consisting of a repeating unit represented by the following general formula (L1), a repeating unit represented by the following general formula (L2), a repeating unit represented by the following general formula (L3), and a repeating unit represented by the following formula (L4):

[0117]

[0118] In general formulas (L1) to (L3), X ２１ represents a hydrogen atom, a halogen atom, or an alkyl group. ２１ represents a hydrogen atom or a substituent. ２１ represents a single bond or a divalent linking group. ２２ represents —COO— or —OCO—. Ｌ１ represents an electron-withdrawing group. ２１ and R ２１may be bonded to each other to form a ring. ２２ represents a hydrogen atom, a halogen atom, or an alkyl group. ２２ represents a hydrogen atom or a substituent. ２３ represents a divalent linking group. Ｌ２ represents a lactone group, a sultone group, or a cyclic carbonate group. ２３ and R ２２ may be bonded to each other to form a ring. ２３ represents a hydrogen atom, a halogen atom, or an alkyl group. ２３ represents a hydrogen atom or a substituent. ２４ represents a divalent linking group. ５ represents an aromatic hydrocarbon group. Ｌ３ represents an electron-withdrawing group. n23 represents a positive integer. When n23 is 2 or more, a plurality of R Ｌ３ may be the same as or different from each other.

[0119] X ２１ The halogen atom in X may be a fluorine atom, a chlorine atom, a bromine atom, or an iodine atom. ２１ The alkyl group of X is not particularly limited, but may be linear or branched, and is preferably an alkyl group having 1 to 12 carbon atoms, more preferably an alkyl group having 1 to 6 carbon atoms, and even more preferably an alkyl group having 1 to 4 carbon atoms. ２１ The alkyl group of X may have a substituent. ２１ preferably represents a hydrogen atom or an alkyl group.

[0120] R ２１ The substituent of X is not particularly limited, but examples thereof include an alkyl group, a halogen atom, and an alkoxy group. ２１ The preferred ranges are the same as those of the alkyl group in R. Examples of the halogen atom include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom. The alkoxy group may be linear or branched, and is preferably an alkoxy group having 1 to 10 carbon atoms, more preferably an alkoxy group having 1 to 6 carbon atoms. R ２１ preferably represents a hydrogen atom.

[0121] L ２１ Examples of the divalent linking group include an alkylene group, a cycloalkylene group, an arylene group, —O—, —CO—, —S—, —SO—, and —SO ２ -, -N(R Ｎ )-, or a divalent linking group formed by combining a plurality of these. Ｎ represents a hydrogen atom or an alkyl group (which may be linear or branched, preferably an alkyl group having 1 to 6 carbon atoms). The alkylene group may be either linear or branched. The number of carbon atoms in the alkylene group is not particularly limited, but is preferably 1 to 10. The cycloalkylene group may be a monocyclic cycloalkylene group or a polycyclic cycloalkylene group. The number of carbon atoms in the cycloalkylene group is not particularly limited, but is preferably 3 to 20, more preferably 5 to 15. The number of carbon atoms in the arylene group is not particularly limited, but is preferably 6 to 20, more preferably 6 to 10. The alkylene group, cycloalkylene group, and arylene group may have a substituent, and examples of the substituent include the above-mentioned substituent T. The substituent may have -O-, -CO-, or a group formed by combining these. In addition, examples of the substituent include -L ２２ -R Ｌ１ It may also be a group represented by the following formula:

[0122] R Ｌ１ The electron-withdrawing group as represented by the formula (EW) is a partial structure represented by the following formula (EW): In formula (EW), * represents a bonding position.

[0123]

[0124] In formula (EW), n ｅｗ HA-C(R ｅｗ１ ) (R ｅｗ２ n is the number of repetitions of the linking group represented by -, and represents an integer of 0 or 1. ｅｗ When is 0, it represents a single bond, and Y ｅｗ１ indicates that Y is bonded. ｅｗ１ represents a halogen atom, a cyano group, a nitro group, or the —C(R ｆ１ ) (R ｆ２ )-R ｆ３Examples of the halo(cyclo)alkyl group include a haloaryl group, an aryl group substituted with a haloalkyl group, an oxy group, a carbonyl group, a sulfonyl group, a sulfinyl group, and combinations thereof. ｅｗ１ is a halogen atom, a cyano group, or a nitro group, n ｅｗ is 1.) R ｅｗ１ , R ｅｗ２ R each independently represents an arbitrary substituent, for example, a hydrogen atom, an alkyl group (preferably having 1 to 8 carbon atoms), a cycloalkyl group (preferably having 3 to 10 carbon atoms), or an aryl group (preferably having 6 to 10 carbon atoms). ｅｗ１ , R ｅｗ２ and Y ｅｗ１ At least two of the above may be linked to each other to form a ring. The term "halo(cyclo)alkyl group" refers to an alkyl group or cycloalkyl group that is at least partially halogenated, and the term "haloaryl group" refers to an aryl group that is at least partially halogenated.

[0125] Y ｅｗ１ is preferably a halogen atom, —C(R ｆ１ ) (R ｆ２ )-R ｆ３ A halo(cyclo)alkyl group, a haloaryl group, or an aryl group substituted with a haloalkyl group is represented by the following formula:

[0126] Here, R ｆ１ represents a halogen atom, a perhaloalkyl group, a perhalocycloalkyl group, or a perhaloaryl group, more preferably a fluorine atom, a perfluoroalkyl group, or a perfluorocycloalkyl group, and even more preferably a fluorine atom or a trifluoromethyl group. ｆ２ , R ｆ３ each independently represents a hydrogen atom, a halogen atom, or an organic group; R ｆ２ and R ｆ３ and may be linked to form a ring. The organic group represents, for example, an alkyl group, a cycloalkyl group, an alkoxy group, etc., which may be substituted with a halogen atom (preferably a fluorine atom), and more preferably, R ｆ２ , R ｆ３ is a (halo)alkyl group or a (halo)cycloalkyl group.ｆ２ is R ｆ１ or R ｆ３ It is more preferable that R is linked to R to form a ring. ｆ２ and R ｆ３ Examples of the ring formed by linking these include a (halo)cycloalkyl ring.

[0127] R ｆ１ ~R ｆ３ The (halo)alkyl group in the formula (I) may be either linear or branched, and linear (halo)alkyl groups preferably have 1 to 30 carbon atoms, more preferably 1 to 20 carbon atoms, and examples thereof include methyl, ethyl, n-propyl, n-butyl, sec-butyl, t-butyl, n-pentyl, n-hexyl, n-heptyl, n-octyl, n-nonyl, n-decanyl, etc., and halogenated groups thereof. Branched (halo)alkyl groups preferably have 3 to 30 carbon atoms, more preferably 3 to 20 carbon atoms, and examples thereof include i-propyl, i-butyl, t-butyl, i-pentyl, t-pentyl, i-hexyl, t-hexyl, i-heptyl, t-heptyl, i-octyl, t-octyl, i-nonyl, t-decanoyl, etc., and halogenated groups thereof. Preferred are groups having 1 to 4 carbon atoms, such as methyl, ethyl, n-propyl, i-propyl, n-butyl, i-butyl and t-butyl, and halogenated groups thereof.

[0128] R ｆ１ ~R ｆ３ In or R ｆ２ and R ｆ３The (halo)cycloalkyl group in the ring formed by linking and may be monocyclic or polycyclic. In the case of a polycyclic type, the (halo)cycloalkyl group may be bridged. That is, in this case, the (halo)cycloalkyl group may have a bridged structure. As the monocyclic type, a (halo)cycloalkyl group having 3 to 8 carbon atoms is preferred, and examples thereof include a (halo)cyclopropyl group, a (halo)cyclopentyl group, a (halo)cyclohexyl group, a (halo)cyclobutyl group, and a (halo)cyclooctyl group. Examples of polycyclic groups include groups having a bicyclo, tricyclo, or tetracyclo structure having 5 or more carbon atoms. (Halo)cycloalkyl groups having 6 to 20 carbon atoms are preferred, such as (halo)adamantyl groups, (halo)norbornyl groups, (halo)isobornyl groups, (halo)camphanyl groups, (halo)dicyclopentyl groups, (halo)α-pinel groups, (halo)tricyclodecanyl groups, (halo)tetracyclododecyl groups, and (halo)androstanyl groups. Examples of these (halo)cycloalkyl groups include those represented by the following formulas and halogenated versions of these groups. Some of the carbon atoms in the cycloalkyl group may be substituted with a heteroatom such as an oxygen atom.

[0129]

[0130] Preferred examples of the alicyclic moiety include an adamantyl group, a noradamantyl group, a decalin group, a tricyclodecanyl group, a tetracyclododecanyl group, a norbornyl group, a cedrol group, a cyclohexyl group, a cycloheptyl group, a cyclooctyl group, a cyclodecanyl group, and a cyclododecanyl group. More preferred are an adamantyl group, a decalin group, a norbornyl group, a cedrol group, a cyclohexyl group, a cycloheptyl group, a cyclooctyl group, a cyclodecanyl group, a cyclododecanyl group, and a tricyclodecanyl group. Substituents on these alicyclic moieties include an alkyl group, a halogen atom, a hydroxyl group, an alkoxy group, a carboxyl group, and an alkoxycarbonyl group. Preferred alkyl groups include lower alkyl groups such as a methyl group, an ethyl group, a propyl group, an isopropyl group, and a butyl group, and more preferred are a methyl group, an ethyl group, a propyl group, and an isopropyl group. Preferred alkoxy groups include those having 1 to 4 carbon atoms, such as a methoxy group, an ethoxy group, a propoxy group, and a butoxy group. Examples of the substituent that the alkyl group and alkoxy group may have include a hydroxyl group, a halogen atom, and an alkoxy group (preferably having 1 to 4 carbon atoms).

[0131] R ｆ２ and R ｆ３ In or R ｆ２ and R ｆ３ The (halo)cycloalkyl group in the ring formed by linking the groups is more preferably —C （ｎ） F （２ｎ－２） Examples of the fluorocycloalkyl group include fluorocycloalkyl groups represented by H. Here, the number of carbon atoms n is not particularly limited, but is preferably 5 to 13, and more preferably 6.

[0132] Y ｅｗ１ In or R ｆ１ The (per)haloaryl group in （ｎ） F （ｎ－１） Here, the number of carbon atoms n is not particularly limited, but is preferably 5 to 13, and more preferably 6.

[0133] Y ｅｗ１The haloalkyl group in the aryl group substituted with a haloalkyl group in ｆ１ ) (R ｆ２ )-R ｆ３ Examples of the haloalkyl group include the halo(cyclo)alkyl group represented by the following formula: ｅｗ１ The aryl group in the aryl group substituted with a haloalkyl group in the above formula is not particularly limited, but examples thereof include aryl groups having 6 to 10 carbon atoms (not including the number of carbon atoms in the haloalkyl group).

[0134] R ｅｗ１ , R ｅｗ２ and Y ｅｗ１ The ring that may be formed by combining at least two of the above is preferably a cycloalkyl group or a heterocyclic group.

[0135] Each group and each ring constituting the partial structure represented by formula (EW) explained above may further have a substituent, and examples of the further substituent include a hydroxyl group, a halogen atom (fluorine, chlorine, bromine, iodine), a nitro group, a cyano group, an alkyl group such as a methyl group, an ethyl group, an n-propyl group, an i-propyl group, an n-butyl group, an i-butyl group, and a t-butyl group, an alkoxy group such as a methoxy group, an ethoxy group, a hydroxyethoxy group, a propoxy group, a hydroxypropoxy group, an n-butoxy group, an isobutoxy group, a sec-butoxy group, and a t-butoxy group, a methoxycarbonyl group, an ethoxycarbonyl group, and the like. Examples of the further substituent include alkoxycarbonyl groups such as aryl groups, aralkyl groups such as benzyl, phenethyl, and cumyl groups, aralkyloxy groups, acyl groups such as formyl, acetyl, butyryl, benzoyl, cyanamyl, and valeryl groups, acyloxy groups such as butyryloxy groups, alkenyl groups such as vinyl, propenyl, and allyl groups, alkenyloxy groups such as vinyloxy, propenyloxy, allyloxy, and butenyloxy groups, aryl groups such as phenyl and naphthyl groups, aryloxy groups such as phenoxy groups, and aryloxycarbonyl groups such as benzoyloxy groups. However, ionic groups are not included in the above further substituents.

[0136] R Ｌ１is preferably an alkyl group substituted with one or more groups selected from the group consisting of a halogen atom, a cyano group, and a nitro group, more preferably an alkyl group substituted with a halogen atom (haloalkyl group), and even more preferably a fluoroalkyl group. The alkyl group substituted with one or more groups selected from the group consisting of a halogen atom, a cyano group, and a nitro group preferably has 1 to 10 carbon atoms, more preferably 1 to 5 carbon atoms. More specifically, R Ｌ１ is -C(R' １ ) (R' ｆ１ ) (R' ｆ２ ) or —C(R′ １ ) (R' ２ ) (R' ｆ１ ) is preferably an atomic group represented by the formula: １ , R' ２ R' each independently represents a hydrogen atom or an alkyl group that is not substituted with an electron-withdrawing group (preferably unsubstituted). ｆ１ , R' ｆ２ R' each independently represents a halogen atom, a cyano group, a nitro group, or a perfluoroalkyl group. １ and R' ２ The alkyl group represented by R' may be linear or branched, and preferably has 1 to 6 carbon atoms. ｆ１ and R' ｆ２ The perfluoroalkyl group may be linear or branched, and preferably has 1 to 6 carbon atoms. Ｌ１ A preferred example of the group is —CF ３ , -C ２ F ５ , -C ３ F ７ , -C ４ F ９ , -CF(CF ３ ) ２ , -CF(CF ３ ) C ２ F ５ , -CF ２ CF (CF ３ ) ２ , -C(CF ３ ) ３ , -C ５ F １１ , -C６ F １３ , -C ７ F １５ , -C ８ F １７ , -CH ２ CF ３ , -CH ２ C ２ F ５ , -CH ２ C ３ F ７ , -CH ２ CF ２ CHF ２ , -CH(CF ３ ) ２ , -CH(CF ３ ) C ２ F ５ , -CH ２ CF (CF ３ ) ２ , -CH ２ CN, among others, -CF ３ , -C ２ F ５ , -C ３ F ７ , -C ４ F ９ , -CH ２ CF ３ , -CH ２ C ２ F ５ , -CH ２ C ３ F ７ , -CH(CF ３ ) ２ , -CH ２ CN is preferred, and —CH ２ CF ３ , -CH ２ C ２ F ５ , -CH ２ C ３ F ７ , -CH(CF ３ ) ２ , -CH ２ CN is more preferred, and —CH ２ C ２ F ５ , -CH(CF ３ ) ２ , -CH ２ More preferred is —CN, and —CH２ C ２ F ５ , -CH(CF ３ ) ２ is particularly preferred.

[0137] X ２２ The halogen atom in X may be a fluorine atom, a chlorine atom, a bromine atom, or an iodine atom. ２２ The alkyl group of X is not particularly limited, but may be linear or branched, and is preferably an alkyl group having 1 to 12 carbon atoms, more preferably an alkyl group having 1 to 6 carbon atoms, and even more preferably an alkyl group having 1 to 4 carbon atoms. ２２ The alkyl group of X may have a substituent. ２２ preferably represents a hydrogen atom or an alkyl group.

[0138] R ２２ The substituent of X is not particularly limited, but examples thereof include an alkyl group, a halogen atom, and an alkoxy group. ２２ The preferred ranges are the same as those of the alkyl group in R. Examples of the halogen atom include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom. The alkoxy group may be linear or branched, and is preferably an alkoxy group having 1 to 10 carbon atoms, more preferably an alkoxy group having 1 to 6 carbon atoms. R ２２ preferably represents a hydrogen atom.

[0139] L ２３ Examples of the divalent linking group include an alkylene group, a cycloalkylene group, an arylene group, —O—, —CO—, —S—, —SO—, and —SO ２ -, -N(R Ｎ )-, or a divalent linking group formed by combining a plurality of these. Ｎrepresents a hydrogen atom or an alkyl group (which may be linear or branched, preferably an alkyl group having 1 to 6 carbon atoms). The alkylene group may be either linear or branched. The number of carbon atoms in the alkylene group is not particularly limited, but is preferably 1 to 10. The cycloalkylene group may be a monocyclic cycloalkylene group or a polycyclic cycloalkylene group. The number of carbon atoms in the cycloalkylene group is not particularly limited, but is preferably 3 to 20, more preferably 5 to 15. The number of carbon atoms in the arylene group is not particularly limited, but is preferably 6 to 20, more preferably 6 to 10. The alkylene group, cycloalkylene group, and arylene group may have a substituent, and examples of the substituent include the above-mentioned substituent T. The substituent may have -O-, -CO-, or a group formed by combining these. In one preferred embodiment, L ２３ preferably represents -COO-, -COO-alkylene group, -COO-alkylene group -COO-, or cycloalkylene group -COO-.

[0140] A Ｌ２ represents a lactone group, a sultone group, or a cyclic carbonate ester group. The lactone group and sultone group are preferably, for example, groups in which one hydrogen atom is removed from a ring member atom constituting the lactone structure or sultone structure in any of the lactone structures represented by formulae (LC1-1) to (LC1-21) and the sultone structures represented by formulae (SL1-1) to (SL1-3) described below. The lactone structure or sultone structure is preferably a group in which one hydrogen atom is removed from a ring member atom constituting the lactone structure or sultone structure in any of the lactone structures represented by formulae (LC1-1) to (LC1-21) described below and the sultone structures represented by formulae (SL1-1) to (SL1-3). ２ ) may have a preferable substituent (Rb ２ ) may include an alkyl group, a cycloalkyl group, an alkoxy group, or an electron-withdrawing group.

[0141] The cyclic carbonate group is preferably a group obtained by removing one hydrogen atom from a ring having —O—CO—O— as a ring member. The ring is preferably a 5- to 8-membered ring, and more preferably a 5- or 6-membered ring.

[0142] n ２ represents an integer of 0 to 4. ２ is Rb ２ represents the number of ２When there are two or more Rb ２ may be different, and a plurality of Rb ２ Rb may be bonded to each other to form a ring. ２ The alkyl group of Rb may be linear or branched, and is preferably an alkyl group having 1 to 10 carbon atoms, more preferably an alkyl group having 1 to 6 carbon atoms. ２ The cycloalkyl group of Rb may be monocyclic or polycyclic, and is preferably a cycloalkyl group having 3 to 15 carbon atoms, more preferably a cycloalkyl group having 3 to 10 carbon atoms. ２ The alkoxy group may be linear or branched, and is preferably an alkoxy group having 1 to 10 carbon atoms, more preferably an alkoxy group having 1 to 6 carbon atoms.

[0143] Rb ２ The electron-withdrawing group is preferably a group represented by the following general formula (A).

[0144]

[0145] In the above general formula (A), Y represents a group that is decomposed by the action of an alkaline developer to increase the solubility in the alkaline developer, and E represents a monovalent group.

[0146] Examples of Y include a carboxylic acid ester group: -COO- or OCO-, an acid anhydride group: -C(O)OC(O)-, an acid imide group: -NHCONH-, a carboxylic acid thioester group: -COS-, a carbonate ester group: -OC(O)O-, and a sulfate ester group: -OSO. ２ O-, sulfonic acid ester group: -SO ２ O- is an example, and a carboxylic acid ester group is preferred.

[0147] E is not particularly limited as long as it is a group that makes the group represented by general formula (A) electron-withdrawing, but it is preferably a partial structure represented by the above formula (EW). In addition, as a preferred embodiment, E is -Si(R Ａ１ ) (R Ａ２ ) (R Ａ３When E is an electron-withdrawing group, the group represented by the general formula (A) tends to be decomposed by the action of an alkaline developer, and the solubility in the alkaline developer tends to be further increased, which is more preferable. E is preferably a group represented by R Ｌ１ The electron-withdrawing group of —Si(R Ａ１ ) (R Ａ２ ) (R Ａ３ ) is a group represented by the above formula (A1), -Si(R Ａ１ ) (R Ａ２ ) (R Ａ３ ) and the preferred ranges are also the same.

[0148] X ２３ The halogen atom in X may be a fluorine atom, a chlorine atom, a bromine atom, or an iodine atom. ２３ The alkyl group of X is not particularly limited, but may be linear or branched, and is preferably an alkyl group having 1 to 12 carbon atoms, more preferably an alkyl group having 1 to 6 carbon atoms, and even more preferably an alkyl group having 1 to 4 carbon atoms. ２３ The alkyl group of X may have a substituent. ２３ preferably represents a hydrogen atom or an alkyl group.

[0149] R ２３ The substituent of X is not particularly limited, but examples thereof include an alkyl group, a halogen atom, and an alkoxy group. ２３ The preferred ranges are the same as those of the alkyl group in R. Examples of the halogen atom include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom. The alkoxy group may be linear or branched, and is preferably an alkoxy group having 1 to 10 carbon atoms, more preferably an alkoxy group having 1 to 6 carbon atoms. R ２３ preferably represents a hydrogen atom.

[0150] L ２４ Examples of the divalent linking group include an alkylene group, a cycloalkylene group, an arylene group, —O—, —CO—, —S—, —SO—, and —SO２ -, -N(R Ｎ )-, or a divalent linking group formed by combining a plurality of these. Ｎ represents a hydrogen atom or an alkyl group (which may be linear or branched, preferably an alkyl group having 1 to 6 carbon atoms). The alkylene group may be either linear or branched. The number of carbon atoms in the alkylene group is not particularly limited, but is preferably 1 to 10. The cycloalkylene group may be a monocyclic cycloalkylene group or a polycyclic cycloalkylene group. The number of carbon atoms in the cycloalkylene group is not particularly limited, but is preferably 3 to 20, more preferably 5 to 15. The number of carbon atoms in the arylene group is not particularly limited, but is preferably 6 to 20, more preferably 6 to 10. The alkylene group, cycloalkylene group, and arylene group may have a substituent, and examples of the substituent include the above-mentioned substituent T. The substituent may have -O-, -CO-, or a group formed by combining these. In one preferred embodiment, L ２４ preferably represents —COO— or an arylene group.

[0151] Ar ５ The aromatic hydrocarbon group may be monocyclic or polycyclic. The aromatic hydrocarbon in the aromatic hydrocarbon group is not particularly limited, but preferably has 6 to 30 carbon atoms, more preferably 6 to 14 carbon atoms. Examples of aromatic hydrocarbons include a benzene ring, a naphthalene ring, and an anthracene ring. Ｌ３ The electron-withdrawing group may be a partial structure represented by the above formula (EW) or may be a group represented by the above general formula (A).

[0152] In a preferred embodiment, the group in resin (P) that decomposes under the action of an alkaline developer and increases its solubility in the alkaline developer preferably has a lactone group or a sultone group, more preferably a lactone group. Preferred examples of the lactone group and sultone group include lactone structures represented by formulae (LC1-1) to (LC1-21) and sultone structures represented by formulae (SL1-1) to (SL1-3) described below, in which one or more hydrogen atoms have been removed from ring atoms constituting the lactone structure or sultone structure.

[0153] Furthermore, the repeating unit having a silicon atom (repeating unit (a1)) may or may not be a repeating unit having a group that decomposes under the action of an alkaline developer, thereby increasing the solubility in the alkaline developer (repeating unit (a2)). In other words, the repeating unit (a1) may be the same as or different from the repeating unit (a2). When the repeating unit (a1) has a group that decomposes under the action of an alkaline developer, thereby increasing the solubility in the alkaline developer, the repeating unit (a1) also corresponds to the repeating unit (a2).

[0154] Specific examples of the repeating unit (a2) are shown below, but the present invention is not limited to these. Me represents a methyl group.

[0155]

[0156]

[0157]

[0158] The content of the repeating unit (a2) is preferably 3 mol% or more, more preferably 15 mol% or more, and even more preferably 30 mol% or more, based on all repeating units in the resin (P). The upper limit is preferably 100 mol% or less, more preferably 90 mol% or less, even more preferably 80 mol% or less, and particularly preferably 70 mol% or less, based on all repeating units in the resin (P). The repeating unit (a2) may be used alone, or two or more types may be used. In a preferred embodiment, the content of the repeating unit (a2) is preferably 5 to 40 mol%, more preferably 10 to 30 mol%, based on all repeating units in the resin (P). In a preferred embodiment, the content of the repeating unit (a2) is preferably 50 to 100 mol%, more preferably 60 to 90 mol%, based on all repeating units in the resin (P).

[0159] The resin (P) may contain other repeating units in addition to the repeating units (a1) and (a2). The resin (P) preferably further contains a repeating unit represented by the following general formula (5):

[0160] In the general formula (5), X represents a hydrogen atom, a halogen atom, or an alkyl group. ３ It represents an alkyl group or cycloalkyl group having a partial structure and being stable to acid. More specifically, the alkyl group or cycloalkyl group that is stable to acid is preferably an alkyl group or cycloalkyl group that does not have an acid-decomposable group (a group that decomposes under the action of acid to generate a polar group such as a carboxy group).

[0161] The alkyl group of X is preferably an alkyl group having 1 to 4 carbon atoms, and examples thereof include a methyl group, an ethyl group, and a propyl group, with a methyl group being more preferred. Examples of the halogen atom of X include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom, with a fluorine atom or a chlorine atom being preferred. The alkyl group of X may have a substituent. X is preferably a hydrogen atom or a methyl group.

[0162] Ra is one or more CH ３ Examples of the alkyl group or cycloalkyl group include a cycloalkyl group having a partial structure. The cycloalkyl group may further have an alkyl group as a substituent. Ra is preferably an unsubstituted alkyl group or an unsubstituted cycloalkyl group substituted with an alkyl group. Ra may be one or more CH ３ The alkyl or cycloalkyl group having a partial structure and stable to acid is CH ３ It is preferable that the number of partial structures is 2 or more and 10 or less, and more preferable that the number of partial structures is 2 or more and 8 or less.

[0163] For example, Ra is a methyl group (CH ３ ), then CH ３ It is assumed that the compound has "one" partial structure, and Ra is an ethyl group (CH ２ CH ３ ), then CH ３ When Ra represents an unsubstituted cycloalkyl group, the group is defined as having one partial structure. ３ There is no partial structure. In other words, the "CH" constituting the ring member of the unsubstituted cycloalkyl group ２ " is CH ３ Not included in the partial structure.

[0164] The repeating unit represented by general formula (5) is preferably an acid-stable (non-acid-decomposable) repeating unit, and specifically, is preferably a repeating unit that does not have a group that decomposes under the action of an acid to produce a polar group.

[0165] When the resin (P) has a repeating unit represented by the general formula (5), the content of the repeating unit represented by the general formula (5) is preferably 10 to 90 mol %, more preferably 10 to 80 mol %, and even more preferably 15 to 60 mol %, based on the total repeating units in the resin (P). The repeating unit represented by the general formula (5) may be used alone or in combination of two or more.

[0166] Preferred specific examples of the repeating unit represented by formula (5) are listed below, but the present invention is not limited thereto.

[0167]

[0168]

[0169] The resin (P) may have a repeating unit having a group that decomposes under the action of an acid to increase its polarity (acid-decomposable group). The repeating unit having an acid-decomposable group is as described below. When the resin (P) has a repeating unit having an acid-decomposable group, the content of the repeating unit having an acid-decomposable group is preferably 10 to 80 mol%, more preferably 20 to 70 mol%, and even more preferably 20 to 50 mol%, based on the total repeating units in the resin (P).

[0170] The resin (P) may or may not contain fluorine atoms, but preferably does not contain fluorine atoms. From the viewpoint of achieving a suitable level of water repellency that can suppress development defects, the mass content of silicon atoms in the resin (P) is preferably 0.1 to 20.0%. The mass content can be calculated as follows: {mass of silicon atoms in the resin (P)} ÷ {mass of all atoms in the resin (P)} × 100

[0171] The mass content of silicon atoms in the resin (P) is more preferably 0.1 to 18.0%, and even more preferably 0.2 to 15.0%.

[0172] Resin (P) can be synthesized according to a conventional method (e.g., radical polymerization). The weight average molecular weight (Mw) of resin (P) is 8,000 or more, as measured by GPC in terms of polystyrene. By setting the weight average molecular weight (Mw) of resin (P) to 8,000 or more, the decrease in film thickness uniformity can be further suppressed, as described above. The weight average molecular weight (Mw) of resin (P) is preferably 10,000 or more, more preferably 12,000 or more. The weight average molecular weight (Mw) of resin (P) is preferably 35,000 or less, more preferably 30,000 or less. Furthermore, the weight average molecular weight (Mw) of resin (P) is preferably 8,000 to 50,000, more preferably 8,000 to 30,000, and even more preferably 8,000 to 28,000. The dispersity (molecular weight distribution, Mw / Mn) of the resin (P) is preferably from 1 to 5, more preferably from 1 to 3, even more preferably from 1.2 to 3.0, and particularly preferably from 1.2 to 2.0.

[0173] The content of the resin (P) is preferably 0.01% by mass or more and 20.0% by mass or less, more preferably 0.1% by mass or more and 15.0% by mass or less, and even more preferably 0.1% by mass or more and less than 10% by mass, based on the total solid content of the composition of the present invention. The resin (P) may be used alone or in combination of two or more. When two or more types are used, the total content thereof is preferably within the above-mentioned preferred content range.

[0174] [Resin Different from Resin (P) and Having Increased Polarity by the Action of Acid] The composition of the present invention contains a resin (A) (also referred to as "resin (A)") that is different from Resin (P) and whose polarity increases by the action of acid. Resin (A) is a resin different from Resin (P). Resin (A) usually contains a group that decomposes under the action of acid to increase its polarity (also referred to as an "acid-decomposable group"), and preferably contains a repeating unit having an acid-decomposable group. When Resin (A) has an acid-decomposable group, in a pattern formation method using the composition of the present invention, a positive pattern is preferably formed when an alkaline developer is used as the developer, and a negative pattern is preferably formed when an organic developer is used as the developer. As the repeating unit having an acid-decomposable group, in addition to a repeating unit having an acid-decomposable group, a repeating unit having an acid-decomposable group containing an unsaturated bond is preferred.

[0175] (Repeating unit having an acid-decomposable group) The acid-decomposable group refers to a group that decomposes under the action of an acid to generate a polar group. The acid-decomposable group preferably has a structure in which a polar group is protected with a group (leaving group) that is released under the action of an acid. In other words, the resin (A) has a repeating unit that decomposes under the action of an acid to generate a polar group. The polarity of a resin having this repeating unit increases under the action of an acid, increasing its solubility in an alkaline developer and decreasing its solubility in an organic solvent. The polar group is preferably an alkali-soluble group, such as a carboxyl group, a phenolic hydroxyl group, a fluorinated alcohol group, a sulfonic acid group, a phosphate group, a sulfonamide group, a sulfonylimide group, a (alkylsulfonyl) (alkylcarbonyl) methylene group, a (alkylsulfonyl) (alkylcarbonyl) imide group, a bis(alkylcarbonyl) methylene group, a bis(alkylcarbonyl) imide group, a bis(alkylsulfonyl) methylene group, a bis(alkylsulfonyl) imide group, a tris(alkylcarbonyl) methylene group, and an acidic group such as a tris(alkylsulfonyl) methylene group, and an alcoholic hydroxyl group. Among these, the polar group is preferably a carboxyl group, a phenolic hydroxyl group, a fluorinated alcohol group (preferably a hexafluoroisopropanol group), or a sulfonic acid group.

[0176] Examples of the group that is eliminated by the action of an acid include groups represented by formulae (Y1) to (Y4). Formula (Y1): —C(Rx １ ) (Rx ２ ) (Rx ３ ) Formula (Y2): -C(=O)OC(Rx １ ) (Rx ２ ) (Rx ３ ) Formula (Y3): -C(R ３６ ) (R ３７ ) (OR ３８ ) Formula (Y4): -C(Rn)(H)(Ar)

[0177] In formula (Y1) and formula (Y2), Rx １ ~Rx ３ Rx each independently represents an alkyl group (linear or branched), a cycloalkyl group (monocyclic or polycyclic), an alkenyl group (linear or branched), or an aryl group (monocyclic or polycyclic). １ ~Rx ３ When all of Rx are alkyl groups (linear or branched), １ ~Rx ３ At least two of Rx are preferably methyl groups. １ ~Rx ３ each independently preferably represents a linear or branched alkyl group, and Rx １ ~Rx ３ More preferably, Rx each independently represents a linear alkyl group. １ ~Rx ３ may be bonded to form a monocyclic or polycyclic ring. １ ~Rx ３ The alkyl group of Rx is preferably an alkyl group having 1 to 5 carbon atoms, such as a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, or a t-butyl group. １ ~Rx ３ The cycloalkyl group of Rx is preferably a monocyclic cycloalkyl group such as a cyclopentyl group or a cyclohexyl group, or a polycyclic cycloalkyl group such as a norbornyl group, a tetracyclodecanyl group, a tetracyclododecanyl group, or an adamantyl group.１ ~Rx ３ The aryl group in Rx is preferably an aryl group having 6 to 14 carbon atoms, and examples thereof include a phenyl group, a naphthyl group, and an anthryl group. １ ~Rx ３ The alkenyl group of Rx is preferably a vinyl group. １ ~Rx ３ The ring formed by combining the two is preferably a cycloalkyl group. １ ~Rx ３ The cycloalkyl group formed by bonding the two is preferably a monocyclic cycloalkyl group such as a cyclopentyl group or a cyclohexyl group, or a polycyclic cycloalkyl group such as a norbornyl group, a tetracyclodecanyl group, a tetracyclododecanyl group, or an adamantyl group, and more preferably a monocyclic cycloalkyl group having 5 to 6 carbon atoms. １ ~Rx ３ In the cycloalkyl group formed by bonding these two, one of the methylene groups constituting the ring may be replaced with a heteroatom such as an oxygen atom, a group containing a heteroatom such as a carbonyl group, or a vinylidene group. In these cycloalkyl groups, one or more of the ethylene groups constituting the cycloalkane ring may be replaced with a vinylene group. The group represented by formula (Y1) or formula (Y2) can be, for example, Rx １ is a methyl group or an ethyl group, and Rx ２ and Rx ３ and Rx are preferably bonded to form the above-mentioned cycloalkyl group. When the actinic ray-sensitive or radiation-sensitive resin composition is, for example, a resist composition for EUV exposure, １ ~Rx ３ an alkyl group, a cycloalkyl group, an alkenyl group, an aryl group, and Rx １ ~Rx ３ The ring formed by bonding these two groups preferably further has a fluorine atom or an iodine atom as a substituent.

[0178] In formula (Y3), R ３６ ~R ３８ R each independently represents a hydrogen atom or a monovalent organic group. ３７ and R３８ may be bonded to each other to form a ring. Examples of the monovalent organic group include an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group, and an alkenyl group. ３６ is also preferably a hydrogen atom. The alkyl group, cycloalkyl group, aryl group, and aralkyl group may contain a heteroatom such as an oxygen atom and / or a group containing a heteroatom such as a carbonyl group. For example, in the alkyl group, cycloalkyl group, aryl group, and aralkyl group, one or more methylene groups may be replaced with a heteroatom such as an oxygen atom and / or a group containing a heteroatom such as a carbonyl group. R ３８ may bond with another substituent on the main chain of the repeating unit to form a ring. ３８ The group formed by bonding together R and another substituent on the main chain of the repeating unit is preferably an alkylene group such as a methylene group. ３６ ~R ３８ and a monovalent organic group represented by R ３７ and R ３８ It is also preferable that the ring formed by bonding these groups together further has a fluorine atom or an iodine atom as a substituent.

[0179] Formula (Y3) is preferably a group represented by the following formula (Y3-1).

[0180]

[0181] Here, L １ and L ２Each independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, or a group combining these (for example, a group combining an alkyl group and an aryl group). M represents a single bond or a divalent linking group. Q represents an alkyl group that may contain a heteroatom, a cycloalkyl group that may contain a heteroatom, an aryl group that may contain a heteroatom, an amino group, an ammonium group, a mercapto group, a cyano group, an aldehyde group, or a group combining these (for example, a group combining an alkyl group and a cycloalkyl group). In the alkyl group and the cycloalkyl group, for example, one of the methylene groups may be replaced with a heteroatom such as an oxygen atom, or a group containing a heteroatom such as a carbonyl group. In addition, L １ and L ２ It is preferred that one of Q, M, and L is a hydrogen atom, and the other is an alkyl group, a cycloalkyl group, an aryl group, or a group in which an alkylene group and an aryl group are combined. １ At least two of the groups may be bonded to form a ring (preferably a 5- or 6-membered ring). ２ is preferably a secondary or tertiary alkyl group, and more preferably a tertiary alkyl group. Examples of secondary alkyl groups include an isopropyl group, a cyclohexyl group, and a norbornyl group, and examples of tertiary alkyl groups include a tert-butyl group and an adamantane group. In these embodiments, the Tg (glass transition temperature) and activation energy are increased, thereby ensuring film strength and suppressing fogging.

[0182] When the actinic ray-sensitive or radiation-sensitive resin composition is, for example, a resist composition for EUV exposure, L １ and L ２It is also preferable that the alkyl group, cycloalkyl group, aryl group, and combinations thereof represented by the formula (I) further have a fluorine atom or an iodine atom as a substituent. The alkyl group, cycloalkyl group, aryl group, and aralkyl group preferably contain a heteroatom such as an oxygen atom in addition to the fluorine atom and iodine atom. Specifically, in the alkyl group, cycloalkyl group, aryl group, and aralkyl group, for example, one of the methylene groups may be replaced with a heteroatom such as an oxygen atom, or a group containing a heteroatom such as a carbonyl group. When the actinic ray-sensitive or radiation-sensitive resin composition is, for example, a resist composition for EUV exposure, in the alkyl group which may contain a heteroatom, cycloalkyl group which may contain a heteroatom, aryl group which may contain a heteroatom, amino group, ammonium group, mercapto group, cyano group, aldehyde group, and combinations thereof represented by Q, the heteroatom is preferably selected from the group consisting of a fluorine atom, an iodine atom, and an oxygen atom.

[0183] In formula (Y4), Ar represents an aromatic ring group. Rn represents an alkyl group, a cycloalkyl group, or an aryl group. Rn and Ar may be bonded to each other to form a non-aromatic ring. Ar is preferably an aryl group. When the actinic ray-sensitive or radiation-sensitive resin composition is, for example, a resist composition for EUV exposure, it is also preferable that the aromatic ring group represented by Ar and the alkyl group, cycloalkyl group, and aryl group represented by Rn have a fluorine atom or an iodine atom as a substituent.

[0184] In terms of excellent acid decomposition properties of the repeating unit, when a non-aromatic ring is directly bonded to the polar group (or a residue thereof) in the leaving group protecting the polar group, it is also preferable that the ring atom in the non-aromatic ring adjacent to the ring atom directly bonded to the polar group (or a residue thereof) does not have a halogen atom such as a fluorine atom as a substituent.

[0185] The group that is eliminated by the action of an acid may also be a 2-cyclopentenyl group having a substituent (such as an alkyl group), such as a 3-methyl-2-cyclopentenyl group, or a cyclohexyl group having a substituent (such as an alkyl group), such as a 1,1,4,4-tetramethylcyclohexyl group.

[0186] The repeating unit having an acid-decomposable group is also preferably a repeating unit represented by formula (A).

[0187]

[0188] L １ represents a divalent linking group which may have a fluorine atom or an iodine atom, R １ represents a hydrogen atom, a fluorine atom, an iodine atom, an alkyl group which may have a fluorine atom or an iodine atom, or an aryl group which may have a fluorine atom or an iodine atom; R ２ represents a leaving group which is eliminated by the action of an acid and may have a fluorine atom or an iodine atom. １ , R １ , and R ２ At least one of L has a fluorine atom or an iodine atom. １ Examples of the divalent linking group which may have a fluorine atom or an iodine atom and is represented by the formula: ２ -, hydrocarbon groups which may have a fluorine atom or an iodine atom (for example, alkylene groups, cycloalkylene groups, alkenylene groups, arylene groups, etc.), and linking groups in which a plurality of these groups are linked together. １As the alkylene group, -CO-, an arylene group, or -arylene group-alkylene group having a fluorine atom or an iodine atom- is preferred, and -CO- or -arylene group-alkylene group having a fluorine atom or an iodine atom- is more preferred. As the arylene group, a phenylene group is preferred. The alkylene group may be linear or branched. The number of carbon atoms in the alkylene group is not particularly limited, but is preferably 1 to 10, and more preferably 1 to 3. The total number of fluorine atoms and iodine atoms contained in the alkylene group having a fluorine atom or an iodine atom is not particularly limited, but is preferably 2 or more, more preferably 2 to 10, and even more preferably 3 to 6.

[0189] R １ The alkyl group represented by R may be linear or branched. The number of carbon atoms in the alkyl group is not particularly limited, but is preferably 1 to 10, and more preferably 1 to 3. １ The total number of fluorine atoms and iodine atoms contained in the alkyl group having a fluorine atom or an iodine atom, represented by the formula (I), is not particularly limited, but is preferably 1 or more, more preferably 1 to 5, and even more preferably 1 to 3. １ The alkyl group represented by the formula (I) may contain a heteroatom other than a halogen atom, such as an oxygen atom.

[0190] R ２ Examples of the leaving group represented by the formulae (Y1) to (Y4) above, which may have a fluorine atom or an iodine atom, include leaving groups represented by the formulae (Y1) to (Y4) above, which have a fluorine atom or an iodine atom.

[0191] The repeating unit having an acid-decomposable group is also preferably a repeating unit represented by formula (AI).

[0192]

[0193] In formula (AI), Xa １ represents a hydrogen atom or an alkyl group which may have a substituent. T represents a single bond or a divalent linking group. Rx １ ~Rx ３each independently represents an alkyl group (linear or branched), a cycloalkyl group (monocyclic or polycyclic), an alkenyl group (linear or branched), or an aryl group (monocyclic or polycyclic). １ ~Rx ３ When all of Rx are alkyl groups (linear or branched), １ ~Rx ３ Preferably, at least two of Rx are methyl groups. １ ~Rx ３ may be bonded to form a monocyclic or polycyclic ring (such as a monocyclic or polycyclic cycloalkyl group).

[0194] Xa １ Examples of the alkyl group represented by the formula (I) which may have a substituent include a methyl group or a —CH ２ -R １１ Examples of the group include a group represented by the following formula: １１ represents a halogen atom (such as a fluorine atom), a hydroxyl group, or a monovalent organic group. １１ Examples of the monovalent organic group represented by the formula (I) include an alkyl group having 5 or less carbon atoms which may be substituted with a halogen atom, an acyl group having 5 or less carbon atoms which may be substituted with a halogen atom, and an alkoxy group having 5 or less carbon atoms which may be substituted with a halogen atom, and an alkyl group having 3 or less carbon atoms is preferred, and a methyl group is more preferred. １ is preferably a hydrogen atom, a methyl group, a trifluoromethyl group, or a hydroxymethyl group.

[0195] Examples of the divalent linking group for T include an alkylene group, an aromatic ring group, a -COO-Rt- group, and a -O-Rt- group. In the formula, Rt represents an alkylene group or a cycloalkylene group. T is preferably a single bond or a -COO-Rt- group. When T represents a -COO-Rt- group, Rt is preferably an alkylene group having 1 to 5 carbon atoms, and is preferably a -CH ２ - group, -(CH ２ ) ２ - group, or -(CH ２ ) ３ The - group is more preferred.

[0196] Rx １ ~Rx ３The alkyl group of Rx is preferably an alkyl group having 1 to 4 carbon atoms, such as a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, or a t-butyl group. １ ~Rx ３ The cycloalkyl group of Rx is preferably a monocyclic cycloalkyl group such as a cyclopentyl group or a cyclohexyl group, or a polycyclic cycloalkyl group such as a norbornyl group, a tetracyclodecanyl group, a tetracyclododecanyl group, or an adamantyl group. １ ~Rx ３ The aryl group in Rx is preferably an aryl group having 6 to 10 carbon atoms, and examples thereof include a phenyl group, a naphthyl group, and an anthryl group. １ ~Rx ３ The alkenyl group of Rx is preferably a vinyl group. １ ~Rx ３ As the cycloalkyl group formed by combining the above two, a monocyclic cycloalkyl group such as a cyclopentyl group or a cyclohexyl group is preferred. Polycyclic cycloalkyl groups such as a norbornyl group, a tetracyclodecanyl group, a tetracyclododecanyl group, and an adamantyl group are also preferred. Among these, a monocyclic cycloalkyl group having 5 to 6 carbon atoms is preferred. Rx １ ~Rx ３ The cycloalkyl group formed by bonding these two may have, for example, one of the methylene groups constituting the ring replaced with a heteroatom such as an oxygen atom, a group containing a heteroatom such as a carbonyl group, or a vinylidene group. Furthermore, in these cycloalkyl groups, one or more of the ethylene groups constituting the cycloalkane ring may be replaced with a vinylene group. The repeating unit represented by formula (AI) can be, for example, Rx １ is a methyl group or an ethyl group, and Rx ２ and Rx ３ and are preferably bonded to form the above-mentioned cycloalkyl group.

[0197] When each of the above groups has a substituent, examples of the substituent include an alkyl group (having 1 to 4 carbon atoms), a halogen atom, a hydroxyl group, an alkoxy group (having 1 to 4 carbon atoms), a carboxyl group, and an alkoxycarbonyl group (having 2 to 6 carbon atoms). The number of carbon atoms in the substituent is preferably 8 or less.

[0198] The repeating unit represented by formula (AI) may be an acid-decomposable (meth)acrylic acid tertiary alkyl ester repeating unit (Xa １ represents a hydrogen atom or a methyl group, and T represents a single bond).

[0199] Specific examples of the repeating unit having an acid-decomposable group are shown below, but the invention is not limited thereto. １ is H, CH ３ , C.F. ３ , or CH ２ Rxa and Rxb each independently represent a linear or branched alkyl group having 1 to 5 carbon atoms.

[0200]

[0201] The resin (A) may have a repeating unit having an acid-decomposable group containing an unsaturated bond as a repeating unit having an acid-decomposable group. As the repeating unit having an acid-decomposable group containing an unsaturated bond, a repeating unit represented by formula (B) is preferred.

[0202]

[0203] In formula (B), Xb represents a hydrogen atom, a halogen atom, or an alkyl group which may have a substituent. L represents a single bond or a divalent linking group which may have a substituent. Ry １ ~Ry ３ each independently represents a linear or branched alkyl group, a monocyclic or polycyclic cycloalkyl group, an alkenyl group, an alkynyl group, or a monocyclic or polycyclic aryl group, provided that Ry １ ~Ry ３ At least one of R represents an alkenyl group, an alkynyl group, a monocyclic or polycyclic cycloalkenyl group, or a monocyclic or polycyclic aryl group.１ ~Ry ３ may be bonded to form a monocyclic or polycyclic ring (such as a monocyclic or polycyclic cycloalkyl group or cycloalkenyl group).

[0204] The alkyl group represented by Xb, which may have a substituent, is, for example, a methyl group or —CH ２ -R １１ Examples of the group include a group represented by the following formula: １１ represents a halogen atom (such as a fluorine atom), a hydroxyl group, or a monovalent organic group, and examples thereof include an alkyl group having 5 or less carbon atoms which may be substituted with a halogen atom, an acyl group having 5 or less carbon atoms which may be substituted with a halogen atom, and an alkoxy group having 5 or less carbon atoms which may be substituted with a halogen atom, preferably an alkyl group having 3 or less carbon atoms, and more preferably a methyl group. Xb is preferably a hydrogen atom, a fluorine atom, a methyl group, a trifluoromethyl group, or a hydroxymethyl group.

[0205] Examples of the divalent linking group for L include a -Rt- group, a -CO- group, a -COO-Rt- group, a -COO-Rt-CO- group, a -Rt-CO- group, and a -O-Rt- group. In the formula, Rt represents an alkylene group, a cycloalkylene group, or an aromatic ring group, and an aromatic ring group is preferable. L is preferably a -Rt- group, a -CO- group, a -COO-Rt-CO- group, or a -Rt-CO- group. Rt may have a substituent such as a halogen atom, a hydroxyl group, or an alkoxy group.

[0206] Ry １ ~Ry ３ The alkyl group of Ry is preferably an alkyl group having 1 to 4 carbon atoms, such as a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, or a t-butyl group. １ ~Ry ３ The cycloalkyl group of Ry is preferably a monocyclic cycloalkyl group such as a cyclopentyl group or a cyclohexyl group, or a polycyclic cycloalkyl group such as a norbornyl group, a tetracyclodecanyl group, a tetracyclododecanyl group, or an adamantyl group. １ ~Ry ３The aryl group in Ry is preferably an aryl group having 6 to 10 carbon atoms, and examples thereof include a phenyl group, a naphthyl group, and an anthryl group. １ ~Ry ３ The alkenyl group in Ry is preferably a vinyl group. １ ~Ry ３ The alkynyl group in Ry is preferably an ethynyl group. １ ~Ry ３ The cycloalkenyl group of Ry is preferably a monocyclic cycloalkyl group such as a cyclopentyl group or a cyclohexyl group, which has a double bond in part thereof. １ ~Ry ３ The cycloalkyl group formed by combining the above two groups is preferably a monocyclic cycloalkyl group such as a cyclopentyl group or a cyclohexyl group, or a polycyclic cycloalkyl group such as a norbornyl group, a tetracyclodecanyl group, a tetracyclododecanyl group, or an adamantyl group. Among these, a monocyclic cycloalkyl group having 5 to 6 carbon atoms is more preferred. １ ~Ry ３ The cycloalkyl group or cycloalkenyl group formed by bonding two of the above is, for example, a group in which one of the methylene groups constituting the ring is substituted with a heteroatom such as an oxygen atom, a carbonyl group, or —SO ２ - group and -SO ３ The repeating unit represented by formula (B) may be substituted with a group containing a hetero atom such as a - group, a vinylidene group, or a combination thereof. In addition, in these cycloalkyl groups or cycloalkenyl groups, one or more ethylene groups constituting the cycloalkane ring or cycloalkene ring may be substituted with a vinylene group. １ is a methyl group, an ethyl group, a vinyl group, an allyl group, or an aryl group, and Ry ２ and Ry ３ and are bonded to form the above-mentioned cycloalkyl group or cycloalkenyl group.

[0207] When each of the above groups has a substituent, examples of the substituent include an alkyl group (having 1 to 4 carbon atoms), a halogen atom, a hydroxyl group, an alkoxy group (having 1 to 4 carbon atoms), a carboxyl group, and an alkoxycarbonyl group (having 2 to 6 carbon atoms). The number of carbon atoms in the substituent is preferably 8 or less.

[0208] The repeating unit represented by formula (B) is preferably an acid-decomposable (meth)acrylic acid tertiary ester repeating unit (a repeating unit in which Xb represents a hydrogen atom or a methyl group and L represents a —CO— group), an acid-decomposable hydroxystyrene tertiary alkyl ether repeating unit (a repeating unit in which Xb represents a hydrogen atom or a methyl group and L represents a phenyl group), or an acid-decomposable styrene carboxylic acid tertiary ester repeating unit (a repeating unit in which Xb represents a hydrogen atom or a methyl group and L represents a —Rt—CO— group (Rt is an aromatic group)).

[0209] The content of the repeating unit having an acid-decomposable group containing an unsaturated bond is preferably 15 mol% or more, more preferably 20 mol% or more, and even more preferably 30 mol% or more, based on the total repeating units in the polymer (A). The upper limit is preferably 80 mol% or less, more preferably 70 mol% or less, and even more preferably 60 mol% or less, based on the total repeating units in the polymer (A). Specific examples of repeating units having an acid-decomposable group containing an unsaturated bond include the repeating units described in paragraphs

[0067] to

[0071] of WO 2022 / 024928. The above descriptions are incorporated herein by reference.

[0210] The content of the repeating units having an acid-decomposable group is preferably 15 mol% or more, more preferably 20 mol% or more, and even more preferably 30 mol% or more, based on the total repeating units in the resin (A), and the upper limit thereof is preferably 90 mol% or less, more preferably 80 mol% or less, even more preferably 70 mol% or less, and particularly preferably 60 mol% or less, based on the total repeating units in the resin (A).

[0211] Resin (A) may contain at least one repeating unit selected from the group consisting of Group A below, and / or at least one repeating unit selected from the group consisting of Group B below. Group A: A group consisting of the following repeating units (20) to (25). (20) A repeating unit having an acid group, as described below. (21) A repeating unit having neither an acid-decomposable group nor an acid group, and having a fluorine atom, a bromine atom, or an iodine atom, as described below. (22) A repeating unit having a lactone group, a sultone group, or a carbonate group, as described below. (23) A repeating unit having a photoacid-generating group, as described below. (24) A repeating unit represented by Formula (V-1) or Formula (V-2) as described below. (25) A repeating unit for reducing main chain mobility. The repeating units represented by Formulas (A) to (E) as described below correspond to (25) A repeating unit for reducing main chain mobility. Group B: A group consisting of the following repeating units (30) to (32). (30) A repeating unit having at least one group selected from a lactone group, a sultone group, a carbonate group, a hydroxyl group, a cyano group, and an alkali-soluble group, as described below. (31) A repeating unit having an alicyclic hydrocarbon structure and not exhibiting acid decomposability, as described below. (32) A repeating unit represented by formula (III), as described below, having neither a hydroxyl group nor a cyano group.

[0212] The resin (A) preferably has an acid group, and as described below, preferably contains a repeating unit having an acid group. The definition of the acid group will be explained later together with preferred embodiments of the repeating unit having an acid group. When the resin (A) has an acid group, the interaction between the resin (A) and the acid generated from the photoacid generator is more excellent. As a result, the diffusion of the acid is further suppressed, and the cross-sectional shape of the formed pattern can be more rectangular.

[0213] Resin (A) may have at least one repeating unit selected from the group consisting of Group A. When the actinic ray-sensitive or radiation-sensitive resin composition is used as an actinic ray-sensitive or radiation-sensitive resin composition for EUV exposure, resin (A) preferably has at least one repeating unit selected from the group consisting of Group A. Resin (A) may contain at least one of a fluorine atom and an iodine atom. When the actinic ray-sensitive or radiation-sensitive resin composition is used as an actinic ray-sensitive or radiation-sensitive resin composition for EUV exposure, resin (A) preferably contains at least one of a fluorine atom and an iodine atom. When resin (A) contains both fluorine atoms and iodine atoms, resin (A) may have one repeating unit containing both fluorine atoms and iodine atoms, or resin (A) may contain two repeating units: a repeating unit containing a fluorine atom and a repeating unit containing an iodine atom. Resin (A) may have a repeating unit having an aromatic group. When the actinic ray-sensitive or radiation-sensitive resin composition is used as an actinic ray-sensitive or radiation-sensitive resin composition for EUV exposure, it is also preferable that the resin (A) has a repeating unit having an aromatic group. The resin (A) may have at least one repeating unit selected from the group consisting of Group B above. When the actinic ray-sensitive or radiation-sensitive resin composition is used as an actinic ray-sensitive or radiation-sensitive resin composition for ArF, it is preferable that the resin (A) has at least one repeating unit selected from the group consisting of Group B above. Note that when the actinic ray-sensitive or radiation-sensitive resin composition is used as an actinic ray-sensitive or radiation-sensitive resin composition for ArF, it is preferable that the resin (A) does not contain either a fluorine atom or a silicon atom. When the actinic ray-sensitive or radiation-sensitive resin composition is used as an actinic ray-sensitive or radiation-sensitive resin composition for ArF, it is preferable that the resin (A) does not have an aromatic group.

[0214] (Repeating Unit Having an Acid Group) The resin (A) may have a repeating unit having an acid group. The acid group preferably has a pKa of 13 or less. The acid dissociation constant of the acid group is preferably 13 or less, more preferably 3 to 13, and even more preferably 5 to 10. When the resin (A) has an acid group having a pKa of 13 or less, the content of the acid group in the resin (A) is not particularly limited, but is often 0.2 to 6.0 mmol / g. Of these, 0.8 to 6.0 mmol / g is preferred, 1.2 to 5.0 mmol / g is more preferred, and 1.6 to 4.0 mmol / g is even more preferred. When the content of the acid group is within the above range, development proceeds smoothly, and the formed pattern shape is excellent, and resolution is also excellent. Examples of the acid group that may be preferred include a carboxyl group, a phenolic hydroxyl group, a fluorinated alcohol group (preferably a hexafluoroisopropanol group), a sulfonic acid group, a sulfonamide group, and an isopropanol group. In the hexafluoroisopropanol group, one or more (preferably one to two) fluorine atoms may be substituted with a group other than a fluorine atom (such as an alkoxycarbonyl group). The acid group may be —C(CF ３ )(OH)—CF ２ In addition, one or more fluorine atoms are substituted with a group other than a fluorine atom to form -C(CF ３ )(OH)—CF ２ - may form a ring containing the repeating unit. The repeating unit having an acid group is preferably a repeating unit different from the repeating unit having a structure in which a polar group is protected by a group that is cleaved by the action of an acid described above, and the repeating unit having a lactone group, a sultone group, or a carbonate group described below. The repeating unit having an acid group may have a fluorine atom or an iodine atom. Specific examples of the repeating unit having an acid group include the repeating units described in paragraphs

[0088] to

[0089] and

[0103] to

[0110] of WO 2022 / 024928. The above descriptions are incorporated herein by reference.

[0215] The repeating unit having an acid group is preferably a repeating unit represented by the following formula (b1-1).

[0216]

[0217] In formula (b1-1), A ａ１ represents a hydrogen atom, an alkyl group, a cycloalkyl group, a halogen atom, or a cyano group. ２１ represents a halogen atom, an alkyl group, a cycloalkyl group, an aryl group, an alkenyl group, an aralkyl group, an alkoxy group, an alkylcarbonyloxy group, an alkylsulfonyloxy group, an alkyloxycarbonyl group, or an aryloxycarbonyl group, and when there are a plurality of R groups, they may be the same or different. ２１ When R ２１ is preferably a hydrogen atom. a represents an integer of 1 to 3. b represents an integer of 0 to (5-a).

[0218] When the polymer (A) contains a repeating unit having an acid group, the content of the repeating unit having an acid group is preferably 10 mol% or more, more preferably 15 mol% or more, based on the total repeating units in the polymer (A), and the upper limit thereof is preferably 70 mol% or less, more preferably 65 mol% or less, and even more preferably 60 mol% or less, based on the total repeating units in the polymer (A).

[0219] (Repeating units having neither an acid-decomposable group nor an acid group, and having a fluorine atom, a bromine atom, or an iodine atom) In addition to the above-mentioned <repeating units having an acid-decomposable group> and <repeating units having an acid group>, the resin (A) may have a repeating unit having neither an acid-decomposable group nor an acid group, and having a fluorine atom, a bromine atom, or an iodine atom (hereinafter also referred to as unit X). The <repeating units having neither an acid-decomposable group nor an acid group, and having a fluorine atom, a bromine atom, or an iodine atom> referred to here is preferably different from other types of repeating units belonging to Group A, such as the <repeating units having a lactone group, a sultone group, or a carbonate group> and the <repeating units having a photoacid-generating group> described below.

[0220] The unit X is preferably a repeating unit represented by formula (C).

[0221]

[0222] L５ represents a single bond or an ester group. ９ represents a hydrogen atom or an alkyl group which may have a fluorine atom or an iodine atom. １０ represents a hydrogen atom, an alkyl group which may have a fluorine atom or an iodine atom, a cycloalkyl group which may have a fluorine atom or an iodine atom, an aryl group which may have a fluorine atom or an iodine atom, or a group combining these. Specific examples of repeating units having a fluorine atom or an iodine atom include the repeating units described in paragraphs

[0116] to

[0117] of WO 2022 / 024928. The above descriptions are incorporated herein by reference.

[0223] The content of the units X is preferably 0 mol% or more, more preferably 5 mol% or more, and even more preferably 10 mol% or more, based on all repeating units in the resin (A), and the upper limit thereof is preferably 50 mol% or less, more preferably 45 mol% or less, and even more preferably 40 mol% or less, based on all repeating units in the resin (A).

[0224] Among the repeating units of the resin (A), the total content of repeating units containing at least one of a fluorine atom, a bromine atom, and an iodine atom is preferably 10 mol% or more, more preferably 20 mol% or more, even more preferably 30 mol% or more, and particularly preferably 40 mol% or more, based on the total repeating units of the resin (A). The upper limit is not particularly limited, but is, for example, 100 mol% or less, based on the total repeating units of the resin (A). Examples of repeating units containing at least one of a fluorine atom, a bromine atom, and an iodine atom include repeating units having a fluorine atom, a bromine atom, or an iodine atom and an acid-decomposable group, repeating units having a fluorine atom, a bromine atom, or an iodine atom and an acid group, and repeating units having a fluorine atom, a bromine atom, or an iodine atom.

[0225] (Repeating unit having a lactone group, a sultone group, or a carbonate group) The resin (A) may have a repeating unit (hereinafter also referred to as "unit Y") having at least one selected from the group consisting of a lactone group, a sultone group, and a carbonate group. It is also preferable that unit Y does not have a hydroxyl group or an acid group such as a hexafluoropropanol group.

[0226] The lactone group or sultone group may have a lactone structure or a sultone structure. The lactone structure or sultone structure is preferably a 5- to 7-membered lactone structure or a 5- to 7-membered sultone structure. Among these, a 5- to 7-membered lactone structure to which another ring structure is fused, forming a bicyclo or spiro structure, or a 5- to 7-membered sultone structure to which another ring structure is fused, forming a bicyclo or spiro structure, is more preferred. Resin (A) preferably has a repeating unit having a lactone group or sultone group formed by removing one or more hydrogen atoms from a ring atom of a lactone structure represented by any one of formulas (LC1-1) to (LC1-21) below, or a sultone structure represented by any one of formulas (SL1-1) to (SL1-3) below, and the lactone group or sultone group may be directly bonded to the main chain. For example, the ring atom of the lactone group or sultone group may constitute the main chain of resin (A).

[0227]

[0228] The lactone structure or sultone structure may be formed by the substituent (Rb ２ ) may have a preferable substituent (Rb ２ ) includes an alkyl group having 1 to 8 carbon atoms, a cycloalkyl group having 4 to 7 carbon atoms, an alkoxy group having 1 to 8 carbon atoms, an alkoxycarbonyl group having 1 to 8 carbon atoms, a carboxyl group, a halogen atom, a cyano group, and an acid-decomposable group. ２ represents an integer of 0 to 4. ２ When there are two or more Rb ２ may be different, and a plurality of Rb ２ They may be bonded to each other to form a ring.

[0229] Examples of repeating units having a group containing a lactone structure represented by any one of formulas (LC1-1) to (LC1-21) or a sultone structure represented by any one of formulas (SL1-1) to (SL1-3) include repeating units represented by the following formula (AI-2):

[0230]

[0231] In formula (AI-2), Rb ０ represents a hydrogen atom, a halogen atom, or an alkyl group having 1 to 4 carbon atoms. ０ Preferred substituents that the alkyl group of Rb may have include a hydroxyl group and a halogen atom. ０ Examples of the halogen atom in Rb include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom. ０ is preferably a hydrogen atom or a methyl group. Ab represents a single bond, an alkylene group, a divalent linking group having a monocyclic or polycyclic alicyclic hydrocarbon structure, an ether group, an ester group, a carbonyl group, a carboxyl group, or a divalent linking group formed by combining these. Among these, Ab is preferably a single bond or -Ab １ -CO ２ A linking group represented by - is preferred. １ is a linear or branched alkylene group, or a monocyclic or polycyclic cycloalkylene group, and is preferably a methylene group, an ethylene group, a cyclohexylene group, an adamantylene group, or a norbornylene group. V is a group obtained by removing one hydrogen atom from a ring member atom of a lactone structure represented by any of formulas (LC1-1) to (LC1-21), or a group obtained by removing one hydrogen atom from a ring member atom of a sultone structure represented by any of formulas (SL1-1) to (SL1-3).

[0232] When optical isomers exist in the repeating unit having a lactone group or a sultone group, any optical isomer may be used. One optical isomer may be used alone, or multiple optical isomers may be used in combination. When one optical isomer is primarily used, its optical purity (ee) is preferably 90 or more, more preferably 95 or more.

[0233] The carbonate group is preferably a cyclic carbonate ester group. For repeating units having a cyclic carbonate ester group, see, for example, paragraphs

[0127] to

[0133] of WO 2022 / 024928. The above description is incorporated herein by reference.

[0234] When the resin (A) contains the unit Y, the content of the unit Y is preferably 1 mol% or more, more preferably 10 mol% or more, based on all repeating units in the resin (A), and the upper limit thereof is preferably 85 mol% or less, more preferably 80 mol% or less, even more preferably 70 mol% or less, and particularly preferably 60 mol% or less, based on all repeating units in the resin (A).

[0235] (Repeating unit having a photoacid generating group) The resin (A) may have, as a repeating unit other than the above, a repeating unit having a group that generates an acid upon irradiation with actinic rays or radiation (also referred to as a "photoacid generating group"). Examples of the repeating unit having a photoacid generating group include a repeating unit represented by formula (4).

[0236]

[0237] R ４１ represents a hydrogen atom or a methyl group. ４１ represents a single bond or a divalent linking group. ４２ represents a divalent linking group. ４０ represents a structural moiety that decomposes upon irradiation with actinic rays or radiation to generate an acid in a side chain. Specific examples of repeating units having a photoacid generating group include the repeating units described in

[0094] to

[0105] of JP 2014-041327 A, the repeating unit described in

[0094] of WO 2018 / 193954 A, and the repeating unit described in

[0138] of WO 2022 / 024928 A. The above descriptions are incorporated herein by reference.

[0238] Examples of the repeating unit represented by formula (4) include the repeating units described in paragraphs

[0094] to

[0105] of JP 2014-041327 A and the repeating unit described in paragraph

[0094] of WO 2018 / 193954 A.

[0239] The content of the repeating unit having a photoacid generating group is preferably 1 mol% or more, more preferably 5 mol% or more, based on the total repeating units in the resin (A), and the upper limit thereof is preferably 40 mol% or less, more preferably 35 mol% or less, and even more preferably 30 mol% or less, based on the total repeating units in the resin (A).

[0240] (Repeating unit represented by formula (V-1) or the following formula (V-2)) The polymer (A) may have a repeating unit represented by the following formula (V-1) or the following formula (V-2). The repeating units represented by the following formula (V-1) and the following formula (V-2) are preferably repeating units different from the above-mentioned repeating units.

[0241]

[0242] In the formula, R ６ and R ７ each independently represents a hydrogen atom, a hydroxyl group, an alkyl group, an alkoxy group, an acyloxy group, a cyano group, a nitro group, an amino group, a halogen atom, an ester group (-OCOR or -COOR: R is an alkyl group or a fluorinated alkyl group having 1 to 6 carbon atoms), or a carboxyl group. As the alkyl group, a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms is preferred. ３ represents an integer of 0 to 6. ４ represents an integer of 0 to 4. ４ is a methylene group, an oxygen atom, or a sulfur atom. Examples of repeating units represented by formula (V-1) or (V-2) are shown below. Examples of repeating units represented by formula (V-1) or (V-2) include the repeating units described in paragraph

[0100] of WO 2018 / 193954.

[0243] (Repeating Unit for Reducing Mobility of Main Chain) Resin (A) preferably has a high glass transition temperature (Tg) in order to suppress excessive diffusion of generated acid or pattern collapse during development. Tg is preferably higher than 90°C, more preferably higher than 100°C, even more preferably higher than 110°C, and particularly preferably higher than 125°C. In order to achieve an excellent dissolution rate in a developer, Tg is preferably 400°C or lower, more preferably 350°C or lower. In this specification, the glass transition temperature (Tg) of a polymer such as resin (A) (hereinafter referred to as "Tg of repeating unit") is calculated by the following method. First, the Tg of a homopolymer consisting of only each repeating unit contained in the polymer is calculated using the Bicerano method. Next, the mass proportion (%) of each repeating unit relative to all repeating units in the polymer is calculated. Next, the Tg at each mass ratio is calculated using the Fox formula (described in Materials Letters 62 (2008) 3152, etc.), and the sum is calculated to obtain the Tg (°C) of the polymer. The Bicerano method is described in Prediction of Polymer Properties, Marcel Dekker Inc., New York (1993). Calculation of Tg by the Bicerano method can be performed using polymer property estimation software MDL Polymer (MDL Information Systems, Inc.). For repeating units for reducing main chain mobility, the contents of

[0144] to

[0160] of WO 2022 / 024928 are incorporated by reference.

[0244] (Repeating unit having at least one group selected from a lactone group, a sultone group, a carbonate group, a hydroxyl group, a cyano group, and an alkali-soluble group) The resin (A) may have a repeating unit having at least one group selected from a lactone group, a sultone group, a carbonate group, a hydroxyl group, a cyano group, and an alkali-soluble group. Examples of the repeating unit having a lactone group, a sultone group, or a carbonate group contained in the resin (A) include the repeating units described above in <Repeating unit having a lactone group, a sultone group, or a carbonate group>. The preferred content is also as described above in <Repeating unit having a lactone group, a sultone group, or a carbonate group>.

[0245] The resin (A) may have a repeating unit having a hydroxyl group or a cyano group. This improves substrate adhesion and developer affinity. The repeating unit having a hydroxyl group or a cyano group is preferably a repeating unit having an alicyclic hydrocarbon structure substituted with a hydroxyl group or a cyano group. The repeating unit having a hydroxyl group or a cyano group preferably does not have an acid-decomposable group. Examples of repeating units having a hydroxyl group or a cyano group include those described in paragraphs

[0081] to

[0084] of JP 2014-098921 A.

[0246] The resin (A) may have a repeating unit having an alkali-soluble group. Examples of the alkali-soluble group include a carboxyl group, a sulfonamide group, a sulfonylimide group, a bissulfonylimide group, and an aliphatic alcohol group (e.g., a hexafluoroisopropanol group) substituted at the α-position with an electron-withdrawing group, with a carboxyl group being preferred. When the resin (A) contains a repeating unit having an alkali-soluble group, the resolution in contact hole applications is improved. Examples of repeating units having an alkali-soluble group include those described in paragraphs

[0085] and

[0086] of JP 2014-098921 A.

[0247] (Repeating unit having an alicyclic hydrocarbon structure and not exhibiting acid decomposability) Resin (A) may have a repeating unit having an alicyclic hydrocarbon structure and not exhibiting acid decomposability. This can reduce elution of low-molecular-weight components from the resist film into the immersion liquid during immersion exposure. Examples of repeating units having an alicyclic hydrocarbon structure and not exhibiting acid decomposability include repeating units derived from 1-adamantyl(meth)acrylate, diamantyl(meth)acrylate, tricyclodecanyl(meth)acrylate, or cyclohexyl(meth)acrylate.

[0248] (Repeating Unit Represented by Formula (III) Having Neither a Hydroxyl Group nor a Cyano Group) The resin (A) may have a repeating unit represented by formula (III) having neither a hydroxyl group nor a cyano group.

[0249]

[0250] In formula (III), R ５ represents a hydrocarbon group having at least one cyclic structure and having neither a hydroxyl group nor a cyano group. Ra represents a hydrogen atom, an alkyl group, or a —CH ２ -O-Ra ２ represents a group. ２ represents a hydrogen atom, an alkyl group, or an acyl group. Examples of the repeating unit represented by formula (III) that does not have either a hydroxyl group or a cyano group include those described in paragraphs

[0087] to

[0094] of JP 2014-098921 A.

[0251] (Other Repeating Units) Furthermore, the resin (A) may have a repeating unit other than the repeating units described above. For example, the resin (A) may have a repeating unit selected from the group consisting of a repeating unit having an oxathiane ring group, a repeating unit having an oxazolone ring group, a repeating unit having a dioxane ring group, and a repeating unit having a hydantoin ring group.

[0252] In addition to the repeating structural units described above, the resin (A) may have various repeating structural units for the purpose of adjusting dry etching resistance, suitability for a standard developer, substrate adhesion, resist profile, resolution, heat resistance, sensitivity, and the like.

[0253] As the resin (A), particularly when the composition of the present invention is used as an actinic ray-sensitive or radiation-sensitive resin composition for ArF, it is preferable that all of the repeating units are composed of repeating units derived from a compound having an ethylenically unsaturated bond. In particular, it is also preferable that all of the repeating units are composed of (meth)acrylate repeating units. When all of the repeating units are composed of (meth)acrylate repeating units, any of those in which all of the repeating units are methacrylate repeating units, all of the repeating units are acrylate repeating units, or all of the repeating units are a combination of methacrylate repeating units and acrylate repeating units can be used, and it is preferable that the acrylate repeating units account for 50 mol% or less of the total repeating units.

[0254] Resin (A) can be synthesized according to a conventional method (e.g., radical polymerization). The weight average molecular weight (Mw) of resin (A), as measured by GPC in terms of polystyrene, is preferably 30,000 or less, more preferably 1,000 to 30,000, even more preferably 3,000 to 30,000, and particularly preferably 5,000 to 15,000. The dispersity (molecular weight distribution, Mw / Mn) of resin (A) is preferably 1 to 5, more preferably 1 to 3, even more preferably 1.2 to 3.0, and particularly preferably 1.2 to 2.0. The smaller the dispersity, the better the resolution and resist shape, and furthermore, the smoother the sidewalls of the resist pattern and the better the roughness.

[0255] The content of resin (A) in the composition of the present invention is preferably 30.0 to 99.9 mass%, more preferably 40.0 to 99.9 mass%, and even more preferably 60.0 to 90.0 mass%, based on the total solid content of the composition of the present invention. Resin (A) may be used alone or in combination of two or more. When two or more types are used, the total content thereof is preferably within the above-mentioned preferred content range.

[0256] [Compound (B) that generates an acid upon irradiation with actinic rays or radiation] The composition of the present invention may further contain a compound that generates an acid upon irradiation with actinic rays or radiation (hereinafter also referred to as "compound (B)" or "photoacid generator (B)"). The compound (B) may be in the form of a low molecular weight compound, or may be incorporated into a part of a polymer. Furthermore, the form of a low molecular weight compound and the form of being incorporated into a part of a polymer may be used in combination. When the compound (B) is in the form of a low molecular weight compound, the molecular weight of the compound (B) is preferably 5,000 or less, more preferably 4,000 or less, and even more preferably 3,000 or less. There is no particular restriction on the lower limit, but 100 or more is preferred. When the compound (B) is in the form of being incorporated into a part of a polymer, it may be incorporated into a part of the resin (A) or into a resin different from the resin (A). The compound (B) is preferably in the form of a low molecular weight compound.

[0257] Examples of the compound (B) include "M ＋ X － ", and it is preferably a compound that generates an organic acid upon exposure. Examples of the organic acid include sulfonic acids (aliphatic sulfonic acids, aromatic sulfonic acids, camphorsulfonic acids, etc.), carboxylic acids (aliphatic carboxylic acids, aromatic carboxylic acids, aralkyl carboxylic acids, etc.), carbonylsulfonylimide acids, bis(alkylsulfonyl)imide acids, and tris(alkylsulfonyl)methide acids.

[0258] "M ＋ X － In the compound represented by the formula ", M ＋ represents a cation, and preferably represents an organic cation. ＋ is preferably a sulfonium cation or an iodonium cation. ＋The cation represented by formula (ZaI) is not particularly limited. The valence of the cation may be monovalent or divalent or higher. As the cation, a cation represented by formula (ZaI) below (hereinafter also referred to as "cation (ZaI)") or a cation represented by formula (ZaII) below (hereinafter also referred to as "cation (ZaII)") is preferred.

[0259]

[0260] In the above formula (ZaI), R ２０１ , R ２０２ and R ２０３ R each independently represents an organic group. ２０１ , R ２０２ and R ２０３ The number of carbon atoms in the organic group represented by R is preferably 1 to 30, and more preferably 1 to 20. ２０１ ~R ２０３ Two of these may be bonded to form a ring structure, and the ring may contain an oxygen atom, a sulfur atom, an ester group, an amide group, or a carbonyl group. ２０１ ~R ２０３ Examples of groups formed by combining two of these include alkylene groups (e.g., butylene and pentylene groups) and -CH ２ -CH ２ -O-CH ２ -CH ２ - are some examples.

[0261] Suitable embodiments of the organic cation in formula (ZaI) include cation (ZaI-1), cation (ZaI-2), cation (ZaI-3b), and cation (ZaI-4b) described below.

[0262] First, the cation (ZaI-1) will be described. The cation (ZaI-1) is R in the above formula (ZaI). ２０１ ~R ２０３ is an arylsulfonium cation, in which at least one of R is an aryl group. ２０１ ~R ２０３ may all be aryl groups, or R ２０１ ~R ２０３ A part of R may be an aryl group, and the rest may be an alkyl group or a cycloalkyl group.２０１ ~R ２０３ is an aryl group, and R ２０１ ~R ２０３ The remaining two of R may be bonded to form a ring structure, and the ring may contain an oxygen atom, a sulfur atom, an ester group, an amide group, or a carbonyl group. ２０１ ~R ２０３ Examples of groups formed by combining two of the above include alkylene groups in which one or more methylene groups may be substituted with an oxygen atom, a sulfur atom, an ester group, an amide group, and / or a carbonyl group (e.g., butylene group, pentylene group, and —CH ２ -CH ２ -O-CH ２ -CH ２ The arylsulfonium cations include triarylsulfonium cations, diarylalkylsulfonium cations, aryldialkylsulfonium cations, diarylcycloalkylsulfonium cations, and aryldicycloalkylsulfonium cations.

[0263] The aryl group contained in the arylsulfonium cation is preferably a phenyl group or a naphthyl group, and more preferably a phenyl group. The aryl group may be an aryl group having a heterocyclic structure containing an oxygen atom, a nitrogen atom, or a sulfur atom. Examples of heterocyclic structures include pyrrole residues, furan residues, thiophene residues, indole residues, benzofuran residues, and benzothiophene residues. When the arylsulfonium cation has two or more aryl groups, the two or more aryl groups may be the same or different. The alkyl group or cycloalkyl group optionally contained in the arylsulfonium cation is preferably a linear alkyl group having 1 to 15 carbon atoms, a branched alkyl group having 3 to 15 carbon atoms, or a cycloalkyl group having 3 to 15 carbon atoms, and more preferably a methyl group, an ethyl group, a propyl group, an n-butyl group, a sec-butyl group, a t-butyl group, a cyclopropyl group, a cyclobutyl group, or a cyclohexyl group.

[0264] R ２０１ ~R ２０３Preferred substituents that the aryl group, alkyl group, and cycloalkyl group may have include alkyl groups (e.g., having 1 to 15 carbon atoms), cycloalkyl groups (e.g., having 3 to 15 carbon atoms), aryl groups (e.g., having 6 to 14 carbon atoms), alkoxy groups (e.g., having 1 to 15 carbon atoms), cycloalkylalkoxy groups (e.g., having 1 to 15 carbon atoms), halogen atoms other than fluorine atoms (e.g., chlorine atoms, bromine atoms, iodine atoms), hydroxyl groups, carboxyl groups, ester groups, sulfinyl groups, sulfonyl groups, alkylthio groups, and phenylthio groups. The above substituents may further have substituents, if possible. It is also preferred that the above substituents form an acid-decomposable group in any combination.

[0265] Next, the cation (ZaI-2) will be described. The cation (ZaI-2) is a cation represented by the formula (ZaI) R ２０１ ~R ２０３ are each independently a cation representing an organic group that does not have an aromatic ring. The aromatic ring also includes an aromatic ring containing a heteroatom. ２０１ ~R ２０３ The number of carbon atoms of the organic group not having an aromatic ring as R is preferably 1 to 30, and more preferably 1 to 20. ２０１ ~R ２０３ are each independently preferably an alkyl group, a cycloalkyl group, an allyl group, or a vinyl group, more preferably a linear or branched 2-oxoalkyl group, a 2-oxocycloalkyl group, or an alkoxycarbonylmethyl group, and still more preferably a linear or branched 2-oxoalkyl group.

[0266] R ２０１ ~R ２０３ Examples of the alkyl group and cycloalkyl group in R include linear alkyl groups having 1 to 10 carbon atoms or branched alkyl groups having 3 to 10 carbon atoms (e.g., methyl, ethyl, propyl, butyl, and pentyl groups), and cycloalkyl groups having 3 to 10 carbon atoms (e.g., cyclopentyl, cyclohexyl, and norbornyl groups). ２０１ ~R ２０３may be further substituted with a halogen atom other than a fluorine atom, an alkoxy group (for example, having 1 to 5 carbon atoms), a hydroxyl group, a cyano group, or a nitro group. ２０１ ~R ２０３ It is also preferred that the substituents independently form an acid-decomposable group by any combination of the substituents.

[0267] Next, the cation (ZaI-3b) will be described. The cation (ZaI-3b) is a cation represented by the following formula (ZaI-3b).

[0268]

[0269] In formula (ZaI-3b), R １ｃ ~R ５ｃ R each independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, an alkoxy group, an aryloxy group, an alkoxycarbonyl group, an alkylcarbonyloxy group, a cycloalkylcarbonyloxy group, a halogen atom other than a fluorine atom, a hydroxyl group, a nitro group, an alkylthio group, or an arylthio group. ６ｃ and R ７ｃ R each independently represents a hydrogen atom, an alkyl group (for example, a t-butyl group), a cycloalkyl group, a halogen atom other than a fluorine atom, a cyano group, or an aryl group. ｘ and R ｙ R each independently represents an alkyl group, a cycloalkyl group, a 2-oxoalkyl group, a 2-oxocycloalkyl group, an alkoxycarbonylalkyl group, an allyl group, or a vinyl group. １ｃ ~R ７ｃ , and R ｘ and R ｙ It is also preferred that the substituents independently form an acid-decomposable group by any combination of the substituents.

[0270] R １ｃ ~R ５ｃ Two or more of the following, R ５ｃ and R ６ｃ , R ６ｃ and R ７ｃ , R ５ｃ and R ｘ , and R ｘ and Rｙ may be bonded to each other to form a ring, and each of these rings may independently contain an oxygen atom, a sulfur atom, a ketone group, an ester bond, or an amide bond. Examples of the ring include aromatic or non-aromatic hydrocarbon rings, aromatic or non-aromatic heterocycles, and polycyclic fused rings formed by combining two or more of these rings. Examples of the ring include 3- to 10-membered rings, preferably 4- to 8-membered rings, and more preferably 5- or 6-membered rings.

[0271] R １ｃ ~R ５ｃ Two or more of the following, R ６ｃ and R ７ｃ , and R ｘ and R ｙ Examples of the group formed by bonding of R include alkylene groups such as butylene and pentylene. The methylene group in this alkylene group may be substituted with a heteroatom such as an oxygen atom. ５ｃ and R ６ｃ , and R ５ｃ and R ｘ The group formed by bonding is preferably a single bond or an alkylene group. Examples of the alkylene group include a methylene group and an ethylene group.

[0272] R １ｃ ~R ５ｃ , R ６ｃ , R ７ｃ , R ｘ , R ｙ , and R １ｃ ~R ５ｃ Two or more of the following, R ５ｃ and R ６ｃ , R ６ｃ and R ７ｃ , R ５ｃ and R ｘ , and R ｘ and R ｙ The ring formed by bonding together may have a substituent.

[0273] Next, the cation (ZaI-4b) will be described. The cation (ZaI-4b) is a cation represented by the following formula (ZaI-4b).

[0274]

[0275] In formula (ZaI-4b), l represents an integer of 0 to 2, and r represents an integer of 0 to 8. １３ represents a hydrogen atom, a halogen atom other than a fluorine atom (for example, a chlorine atom, a bromine atom, or an iodine atom), a hydroxyl group, an alkyl group, a halogenated alkyl group other than a fluorine atom, an alkoxy group, a carboxyl group, an alkoxycarbonyl group, or a group containing a cycloalkyl group (which may be a cycloalkyl group itself or a group containing a cycloalkyl group as a part). These groups may have a substituent. R １４ represents a hydroxyl group, a halogen atom other than a fluorine atom (for example, a chlorine atom, a bromine atom, or an iodine atom), an alkyl group, a halogenated alkyl group other than a fluorine atom, an alkoxy group, an alkoxycarbonyl group, an alkylcarbonyl group, an alkylsulfonyl group, a cycloalkylsulfonyl group, or a group containing a cycloalkyl group (which may be a cycloalkyl group itself or a group containing a cycloalkyl group as a part). These groups may have a substituent. R １４ When a plurality of R are present, each independently represents the above group such as a hydroxyl group. １５ each independently represents an alkyl group, a cycloalkyl group, or a naphthyl group. １５ may be bonded to each other to form a ring. １５ When two R are bonded to each other to form a ring, the ring skeleton may contain a heteroatom such as an oxygen atom or a nitrogen atom. １５ are preferably alkylene groups and bonded to each other to form a ring structure. １５ The ring formed by bonding together may have a substituent.

[0276] In formula (ZaI-4b), R １３ , R １４ , and R １５ The alkyl group in R may be linear or branched. The number of carbon atoms in the alkyl group is preferably 1 to 10. The alkyl group is preferably a methyl group, an ethyl group, an n-butyl group, a t-butyl group, or the like. １３ ~R １５, and R ｘ and R ｙ It is also preferred that each of the substituents independently form an acid-decomposable group by any combination of the substituents.

[0277] Next, formula (ZaII) will be described. In formula (ZaII), R ２０４ and R ２０５ R each independently represents an aryl group, an alkyl group, or a cycloalkyl group. ２０４ and R ２０５ The aryl group in R is preferably a phenyl group or a naphthyl group, and more preferably a phenyl group. ２０４ and R ２０５ The aryl group in R may be an aryl group having a heterocycle containing an oxygen atom, a nitrogen atom, a sulfur atom, or the like. Examples of the skeleton of the aryl group having a heterocycle include pyrrole, furan, thiophene, indole, benzofuran, and benzothiophene. ２０４ and R ２０５ The alkyl group and cycloalkyl group are preferably a linear alkyl group having 1 to 10 carbon atoms or a branched alkyl group having 3 to 10 carbon atoms (e.g., methyl, ethyl, propyl, butyl, or pentyl), or a cycloalkyl group having 3 to 10 carbon atoms (e.g., cyclopentyl, cyclohexyl, or norbornyl).

[0278] R ２０４ and R ２０５ The aryl group, alkyl group, and cycloalkyl group in R may each independently have a substituent. ２０４ and R ２０５ Examples of the substituent that the aryl group, alkyl group, and cycloalkyl group may have include an alkyl group (e.g., having 1 to 15 carbon atoms), a cycloalkyl group (e.g., having 3 to 15 carbon atoms), an aryl group (e.g., having 6 to 15 carbon atoms), an alkoxy group (e.g., having 1 to 15 carbon atoms), a halogen atom other than a fluorine atom, a hydroxyl group, and a phenylthio group. ２０４ and R ２０５ It is also preferred that the substituents independently form an acid-decomposable group by any combination of the substituents.

[0279] Below is M ＋ Specific examples of the cation represented by the formula (I) are shown below, but the present invention is not limited thereto.

[0280]

[0281]

[0282] "M ＋ X － In the compound represented by the formula "X － represents an anion, preferably an organic anion. The organic anion is not particularly limited, and examples thereof include monovalent or divalent or higher organic anions. The organic anion is preferably an anion having a significantly low ability to cause a nucleophilic reaction, and more preferably a non-nucleophilic anion.

[0283] Examples of non-nucleophilic anions include sulfonate anions (aliphatic sulfonate anions, aromatic sulfonate anions, camphorsulfonate anions, etc.), carboxylate anions (aliphatic carboxylate anions, aromatic carboxylate anions, aralkyl carboxylate anions, etc.), sulfonylimide anions, bis(alkylsulfonyl)imide anions, and tris(alkylsulfonyl)methide anions.

[0284] The aliphatic moiety in the aliphatic sulfonate anion and the aliphatic carboxylate anion may be a linear or branched alkyl group or a cycloalkyl group, and is preferably a linear or branched alkyl group having 1 to 30 carbon atoms or a cycloalkyl group having 3 to 30 carbon atoms. The alkyl group may be, for example, a fluoroalkyl group (which may have a substituent other than a fluorine atom, or may be a perfluoroalkyl group).

[0285] The aryl group in the aromatic sulfonate anion and aromatic carboxylate anion is preferably an aryl group having 6 to 14 carbon atoms, and examples thereof include a phenyl group, a tolyl group, and a naphthyl group.

[0286] The alkyl group, cycloalkyl group, and aryl group mentioned above may have a substituent. The substituent is not particularly limited, but examples thereof include a nitro group, a halogen atom such as a fluorine atom or a chlorine atom, a carboxyl group, a hydroxyl group, an amino group, a cyano group, an alkoxy group (preferably having 1 to 15 carbon atoms), an alkyl group (preferably having 1 to 10 carbon atoms), a cycloalkyl group (preferably having 3 to 15 carbon atoms), an aryl group (preferably having 6 to 14 carbon atoms), an alkoxycarbonyl group (preferably having 2 to 7 carbon atoms), an acyl group (preferably having 2 to 12 carbon atoms), an alkoxycarbonyloxy group (preferably having 2 to 7 carbon atoms), an alkylthio group (preferably having 1 to 15 carbon atoms), an alkylsulfonyl group (preferably having 1 to 15 carbon atoms), an alkyliminosulfonyl group (preferably having 1 to 15 carbon atoms), and an aryloxysulfonyl group (preferably having 6 to 20 carbon atoms).

[0287] The aralkyl group in the aralkyl carboxylate anion is preferably an aralkyl group having 7 to 14 carbon atoms. Examples of the aralkyl group having 7 to 14 carbon atoms include a benzyl group, a phenethyl group, a naphthylmethyl group, a naphthylethyl group, and a naphthylbutyl group.

[0288] An example of the sulfonylimide anion is a saccharin anion.

[0289] The alkyl group in the bis(alkylsulfonyl)imide anion and the tris(alkylsulfonyl)methide anion is preferably an alkyl group having 1 to 5 carbon atoms. Substituents for these alkyl groups include halogen atoms, alkyl groups substituted with halogen atoms, alkoxy groups, alkylthio groups, alkyloxysulfonyl groups, aryloxysulfonyl groups, and cycloalkylaryloxysulfonyl groups, with fluorine atoms or alkyl groups substituted with fluorine atoms being preferred. Furthermore, the alkyl groups in the bis(alkylsulfonyl)imide anion may be bonded to each other to form a ring structure, which increases the acid strength.

[0290] Other non-nucleophilic anions include, for example, phosphorus fluorides (e.g., PF ６－ ), boron fluorides (e.g., BF ４ － ), and antimony fluorides (e.g., SbF ６ － ) are listed.

[0291] The non-nucleophilic anion is also preferably an anion represented by the following formula (AN1).

[0292]

[0293] In formula (AN1), R １ and R ２ each independently represents a hydrogen atom or a substituent. The substituent is not particularly limited, but a group that is not an electron-withdrawing group is preferred. Examples of groups that are not electron-withdrawing groups include hydrocarbon groups, hydroxyl groups, oxyhydrocarbon groups, oxycarbonyl hydrocarbon groups, amino groups, hydrocarbon-substituted amino groups, and hydrocarbon-substituted amide groups. Examples of groups that are not electron-withdrawing groups include, each independently, -R', -OH, -OR', -OCOR', -NH ２ , -NR' ２ , —NHR′, or —NHCOR′ is preferred, where R′ is a monovalent hydrocarbon group.

[0294] Examples of the monovalent hydrocarbon group represented by R' include monovalent linear or branched hydrocarbon groups such as alkyl groups such as methyl, ethyl, propyl, and butyl; alkenyl groups such as ethenyl, propenyl, and butenyl; alkynyl groups such as ethynyl, propynyl, and butynyl; cycloalkyl groups such as cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, norbornyl, and adamantyl; monovalent alicyclic hydrocarbon groups such as cycloalkenyl groups such as cyclopropenyl, cyclobutenyl, cyclopentenyl, and norbornenyl; aryl groups such as phenyl, tolyl, xylyl, mesityl, naphthyl, methylnaphthyl, anthryl, and methylanthryl; and aralkyl groups such as benzyl, phenethyl, phenylpropyl, naphthylmethyl, and anthrylmethyl. Among these, R １ and R２ are each independently preferably a hydrocarbon group (preferably a cycloalkyl group) or a hydrogen atom.

[0295] L represents a divalent linking group. When a plurality of L's are present, they may be the same or different. Examples of the divalent linking group include -O-CO-O-, -COO-, -CONH-, -CO-, -O-, -S-, -SO-, and -SO ２ Examples of the divalent linking group include -, an alkylene group (preferably having 1 to 6 carbon atoms), a cycloalkylene group (preferably having 3 to 15 carbon atoms), an alkenylene group (preferably having 2 to 6 carbon atoms), and a divalent linking group formed by combining a plurality of these groups. Among these, examples of the divalent linking group include -O-CO-O-, -COO-, -CONH-, -CO-, -O-, and -SO ２ -, -O-CO-O-alkylene group-, -COO-alkylene group-, or -CONH-alkylene group- is preferred, and -O-CO-O-, -O-CO-O-alkylene group-, -COO-, -CONH-, or -SO ２ - or -COO-alkylene group- is more preferred.

[0296] As L, for example, a group represented by the following formula (AN1-1) is preferable: ａ - (CR ２ａ ２ ) Ｘ -Q-(CR ２ｂ ２ ) Ｙ -* ｂ (AN1-1)

[0297] In formula (AN1-1), * ａ is R in formula (AN1). ３ Represents the bonding position with * ｂ represents -C(R １ ) (R ２ X and Y each independently represent an integer of 0 to 10, preferably an integer of 0 to 3. R ２ａ and R ２ｂ R each independently represents a hydrogen atom or a substituent. ２ａ and R ２ｂ When there are multiple R２ａ and R ２ｂ may be the same or different, provided that when Y is 1 or more, -C(R １ ) (R ２ )- and CR directly bonded ２ｂ ２ R in ２ｂ is other than a fluorine atom. Q is * Ａ -O-CO-O-* Ｂ , * Ａ -CO-* Ｂ , * Ａ -CO-O-* Ｂ , * Ａ -O-CO-* Ｂ , * Ａ -O-* Ｂ , * Ａ -S-* Ｂ , or * Ａ -SO ２ -* Ｂ where X+Y in formula (AN1-1) is 1 or more, and R ２ａ and R ２ｂ are all hydrogen atoms, Q is * Ａ -O-CO-O-* Ｂ , * Ａ -CO-* Ｂ , * Ａ -O-CO-* Ｂ , * Ａ -O-* Ｂ , * Ａ -S-* Ｂ , or * Ａ -SO ２ -* Ｂ Represents. Ａ is R in formula (AN1). ３ represents the bonding position on the side, and * Ｂ represents -SO in formula (AN1). ３ － represents the bonding position on the side.

[0298] In formula (AN1), R ３represents an organic group. The organic group is not particularly limited as long as it has one or more carbon atoms, and may be a linear group (for example, a linear alkyl group), a branched group (for example, a branched alkyl group such as a t-butyl group), or a cyclic group. The organic group may or may not have a substituent. The organic group may or may not have a heteroatom (such as an oxygen atom, a sulfur atom, and / or a nitrogen atom).

[0299] Among them, R ３ is preferably an organic group having a cyclic structure. The cyclic structure may be monocyclic or polycyclic and may have a substituent. The ring in the organic group having a cyclic structure is preferably directly bonded to L in formula (AN1). The organic group having a cyclic structure may or may not have a heteroatom (oxygen atom, sulfur atom, and / or nitrogen atom, etc.). The heteroatom may be substituted for one or more of the carbon atoms forming the cyclic structure. The organic group having a cyclic structure is preferably, for example, a hydrocarbon group having a cyclic structure, a lactone ring group, or a sultone ring group. Among these, the organic group having a cyclic structure is preferably a hydrocarbon group having a cyclic structure. The hydrocarbon group having a cyclic structure is preferably a monocyclic or polycyclic cycloalkyl group. These groups may have a substituent. The cycloalkyl group may be monocyclic (e.g., a cyclohexyl group) or polycyclic (e.g., an adamantyl group), and preferably has 5 to 12 carbon atoms. As the lactone group and sultone group, for example, a group in which one hydrogen atom has been removed from a ring atom constituting the lactone structure or sultone structure in any of the structures represented by the above-mentioned formulae (LC1-1) to (LC1-21) and the structures represented by the above-mentioned formulae (SL1-1) to (SL1-3) is preferred.

[0300] The non-nucleophilic anion may be a benzenesulfonate anion, and is preferably a benzenesulfonate anion substituted with a branched alkyl group or a cycloalkyl group.

[0301] The non-nucleophilic anion is also preferably an anion represented by the following formula (AN2).

[0302]

[0303] In formula (AN2), o represents an integer of 1 to 3. p represents an integer of 0 to 10. q represents an integer of 0 to 10.

[0304] Xf represents a hydrogen atom, a fluorine atom, an alkyl group substituted with at least one fluorine atom, or an organic group having no fluorine atoms. The number of carbon atoms in this alkyl group is preferably 1 to 10, more preferably 1 to 4. The alkyl group substituted with at least one fluorine atom is preferably a perfluoroalkyl group. Xf is preferably a fluorine atom or a perfluoroalkyl group having 1 to 4 carbon atoms, and is preferably a fluorine atom or CF ３ It is more preferable that both Xf's are fluorine atoms.

[0305] R ４ and R ５ R each independently represents a hydrogen atom, a fluorine atom, an alkyl group, or an alkyl group substituted with at least one fluorine atom. ４ and R ５ If there are multiple ４ and R ５ may be the same or different. ４ and R ５ The alkyl group represented by the formula (I) preferably has 1 to 4 carbon atoms. The alkyl group may have a substituent. ４ and R ５ is preferably a hydrogen atom.

[0306] L represents a divalent linking group, and is defined the same as L in formula (AN1).

[0307] W represents an organic group containing a cyclic structure. Among these, a cyclic organic group is preferred. Examples of the cyclic organic group include an alicyclic group, an aryl group, and a heterocyclic group. The alicyclic group may be monocyclic or polycyclic. Examples of the monocyclic alicyclic group include a monocyclic cycloalkyl group such as a cyclopentyl group, a cyclohexyl group, and a cyclooctyl group. Examples of the polycyclic alicyclic group include a polycyclic cycloalkyl group such as a norbornyl group, a tricyclodecanyl group, a tetracyclodecanyl group, a tetracyclododecanyl group, and an adamantyl group. Among these, alicyclic groups having a bulky structure with 7 or more carbon atoms, such as a norbornyl group, a tricyclodecanyl group, a tetracyclodecanyl group, a tetracyclododecanyl group, and an adamantyl group, are preferred.

[0308] The aryl group may be monocyclic or polycyclic. Examples of the aryl group include a phenyl group, a naphthyl group, a phenanthryl group, and an anthryl group. The heterocyclic group may be monocyclic or polycyclic. In particular, a polycyclic heterocyclic group can further suppress the diffusion of acid. The heterocyclic group may or may not have aromaticity. Examples of heterocyclic rings having aromaticity include a furan ring, a thiophene ring, a benzofuran ring, a benzothiophene ring, a dibenzofuran ring, a dibenzothiophene ring, and a pyridine ring. Examples of heterocyclic rings having no aromaticity include a tetrahydropyran ring, a lactone ring, a sultone ring, and a decahydroisoquinoline ring. The heterocyclic ring in the heterocyclic group is preferably a furan ring, a thiophene ring, a pyridine ring, or a decahydroisoquinoline ring.

[0309] The cyclic organic group may have a substituent. Examples of the substituent include an alkyl group (which may be either linear or branched, and preferably has 1 to 12 carbon atoms), a cycloalkyl group (which may be either monocyclic, polycyclic, or spirocyclic, and preferably has 3 to 20 carbon atoms), an aryl group (which preferably has 6 to 14 carbon atoms), a hydroxyl group, an alkoxy group, an ester group, an amide group, a urethane group, a ureido group, a thioether group, a sulfonamide group, and a sulfonate ester group. The carbon constituting the cyclic organic group (the carbon that contributes to ring formation) may be a carbonyl carbon.

[0310] The anion represented by formula (AN2) is SO ３ － -CF ２ -CH ２ -OCO-(L) ｑ’ -W, SO ３ － -CF ２ -CHF-CH ２ -OCO-(L) ｑ’ -W, SO ３ － -CF ２ -COO-(L) ｑ’ -W, SO ３ － -CF ２ -CF ２ -CH ２ -CH ２ - (L) ｑ -W or SO ３ － -CF ２ -CH(CF ３ ) -OCO-(L) ｑ’ -W is preferred. Here, L, q and W are the same as those in formula (AN2). q' represents an integer of 0 to 10.

[0311] The non-nucleophilic anion is also preferably an aromatic sulfonate anion represented by the following formula (AN3).

[0312]

[0313] In formula (AN3), Ar represents an aryl group (such as a phenyl group) and may further have a substituent other than the sulfonate anion and the -(D-B) group. Examples of the substituent that may further be had include a fluorine atom and a hydroxyl group. n represents an integer of 0 or greater. n is preferably 1 to 4, more preferably 2 to 3, and even more preferably 3.

[0314] D represents a single bond or a divalent linking group. Examples of the divalent linking group include an ether group, a thioether group, a carbonyl group, a sulfoxide group, a sulfone group, a sulfonate ester group, an ester group, and a group formed by combining two or more of these groups.

[0315] B represents a hydrocarbon group. B is preferably an aliphatic hydrocarbon group, more preferably an isopropyl group, a cyclohexyl group, or an aryl group which may further have a substituent (such as a tricyclohexylphenyl group).

[0316] As the non-nucleophilic anion, a disulfonamide anion is also preferred. The disulfonamide anion is, for example, N － (SO ２ -R ｑ ) ２ where R ｑ represents an alkyl group which may have a substituent, preferably a fluoroalkyl group, more preferably a perfluoroalkyl group. ｑ may be bonded to each other to form a ring. ｑ The group formed by bonding together is preferably an alkylene group which may have a substituent, more preferably a fluoroalkylene group, and even more preferably a perfluoroalkylene group. The alkylene group preferably has 2 to 4 carbon atoms.

[0317] It is also preferable that the compound (B) is at least one selected from the group consisting of the compounds (I) to (II).

[0318] (Compound (I)) Compound (I) is a compound having one or more structural moieties X and one or more structural moieties Y, which generates an acid containing the first acidic moiety derived from the structural moiety X and the second acidic moiety derived from the structural moiety Y when irradiated with actinic rays or radiation. Structural moiety X: Anionic moiety A １ － and the cationic moiety M １ ＋ and by irradiation with actinic rays or radiation, HA １ Structural moiety Y: anionic moiety A, which forms a first acidic moiety represented by the formula: ２ － and the cationic moiety M ２ ＋ and by irradiation with actinic rays or radiation, HA ２ The compound (I) satisfies the following condition I:

[0319] Condition I: In the compound (I), the cationic moiety M in the structural moiety X １ ＋ and the cationic moiety M in the structural moiety Y ２ ＋ H ＋ The compound PI in which the cation moiety M in the structural moiety X is replaced by １ ＋ H ＋ HA is replaced by １ and the cationic moiety M in the structural moiety Y. ２ ＋ H ＋ HA is replaced by ２ and an acid dissociation constant a2 derived from the acidic site represented by the formula (I), and the acid dissociation constant a2 is greater than the acid dissociation constant a1.

[0320] Condition I will be explained in more detail below. For example, when compound (I) is an acid-generating compound having one of the first acidic sites derived from the structural moiety X and one of the second acidic sites derived from the structural moiety Y, compound PI is "HA １ and H.A.２ The acid dissociation constant a1 and the acid dissociation constant a2 of the compound PI correspond to "a compound having the following structure." More specifically, when the acid dissociation constant of the compound PI is calculated, the acid dissociation constant a1 and the acid dissociation constant a2 of the compound PI correspond to "a compound having the following structure." １ － and H.A. ２ The pKa at which the compound becomes "a compound having the above formula (A)" is the acid dissociation constant a1, １ － and H.A. ２ "A compound having １ － and A ２ － The pKa at which the compound becomes "a compound having the above formula (I)" is the acid dissociation constant a2.

[0321] For example, when compound (I) is an acid-generating compound having two of the first acidic sites derived from the structural site X and one of the second acidic sites derived from the structural site Y, compound PI is a compound having two HAs. １ and one HA ２ When the acid dissociation constant of compound PI is calculated, compound PI corresponds to "a compound having one A １ － and one HA １ and one HA ２ and the acid dissociation constant when "a compound having one A １ － and one HA １ and one HA ２ "Compound having two A １ － and one HA ２ The acid dissociation constant when the compound is a compound having two A's corresponds to the acid dissociation constant a1 described above. １ － and one HA ２ "Compound having two A １ － and A ２ － In other words, in the case of compound PI, the acid dissociation constant when the compound becomes a compound having the cation moiety M in the structural moiety X corresponds to the acid dissociation constant a2. １ ＋ H ＋ HA is replaced by１ When the compound PI has a plurality of acid dissociation constants derived from the acidic moiety represented by the formula (I), the value of the acid dissociation constant a2 is larger than the largest value of the plurality of acid dissociation constants a1. １ － and one HA １ and one HA ２ The acid dissociation constant when the compound is aa is defined as "a compound having one A １ － and one HA １ and one HA ２ "Compound having two A １ － and one HA ２ When the acid dissociation constant when the compound becomes "a compound having the formula (I)" is ab, the relationship between aa and ab satisfies aa<ab.

[0322] The acid dissociation constants a1 and a2 are determined by the above-mentioned method for measuring an acid dissociation constant. The compound PI corresponds to an acid generated when compound (I) is irradiated with actinic rays or radiation. When compound (I) has two or more structural moieties X, the structural moieties X may be the same or different. In addition, when two or more of the above A １ － and two or more of the above M １ ＋ In compound (I), the above A １ － and the above A ２ － , and the above M １ ＋ and the above M ２ ＋ may be the same or different, but １ － and the above A ２ － are preferably different from each other.

[0323] In the compound PI, the difference (absolute value) between the acid dissociation constant a1 (the maximum value when there are multiple acid dissociation constants a1) and the acid dissociation constant a2 is preferably 0.1 or more, more preferably 0.5 or more, and even more preferably 1.0 or more. The upper limit of the difference (absolute value) between the acid dissociation constant a1 (the maximum value when there are multiple acid dissociation constants a1) and the acid dissociation constant a2 is not particularly limited, but is, for example, 16 or less.

[0324] In the compound PI, the acid dissociation constant a2 is preferably not more than 20, more preferably not more than 15. The lower limit of the acid dissociation constant a2 is preferably not less than −4.0.

[0325] In the compound PI, the acid dissociation constant a1 is preferably 2.0 or less, and more preferably 0 or less. The lower limit of the acid dissociation constant a1 is preferably −20.0 or more.

[0326] Anion site A １ － and anionic moiety A ２ － is a structural moiety containing a negatively charged atom or atomic group, and examples thereof include structural moieties selected from the group consisting of formulae (AA-1) to (AA-3) and formulae (BB-1) to (BB-6) shown below. １ － As the anionic moiety A, those capable of forming an acidic moiety with a small acid dissociation constant are preferred, and among these, any of formulas (AA-1) to (AA-3) is more preferred, and any of formulas (AA-1) and (AA-3) is even more preferred. ２ － As the anion moiety A １ － Preferably, it is one that can form an acidic site with a larger acid dissociation constant than the above, more preferably any of formulas (BB-1) to (BB-6), and even more preferably any of formulas (BB-1) and (BB-4). In the following formulas (AA-1) to (AA-3) and formulas (BB-1) to (BB-6), * represents a bonding position. In formula (AA-2), R Ａ represents a monovalent organic group. ＡThe monovalent organic group represented by the formula (I) is not particularly limited, but examples thereof include a cyano group, a trifluoromethyl group, and a methanesulfonyl group.

[0327]

[0328]

[0329] Cationic moiety M １ ＋ and cationic moiety M ２ ＋ is a structural moiety containing a positively charged atom or atomic group, and examples thereof include monovalent organic cations. ＋ Examples of the organic cation include those represented by the following formula:

[0330] (Compound (II)) Compound (II) is a compound having two or more of the above structural moieties X and one or more of the following structural moieties Z, which generates an acid containing two or more of the first acidic moieties derived from the structural moiety X and the structural moiety Z upon irradiation with actinic rays or radiation. Structural moiety Z: a ​​nonionic moiety capable of neutralizing an acid

[0331] In compound (II), the definition of the structural moiety X and A １ － and M １ ＋ The definition of the structural moiety X in the compound (I) and the definition of A １ － and M １ ＋ The definition and preferred embodiments are also the same.

[0332] In the compound (II), the cation moiety M in the structural moiety X １ ＋ H ＋ In the compound PII, the cationic moiety M in the structural moiety X is replaced by １ ＋ H ＋ HA is replaced by １The preferred range of the acid dissociation constant a1 derived from the acidic moiety represented by the formula (I) is the same as the acid dissociation constant a1 in the compound PI. In addition, when the compound (II) is, for example, a compound that generates an acid having two of the first acidic moieties derived from the structural moiety X and the structural moiety Z, the compound PII is a compound that generates an acid having two HAs. １ When the acid dissociation constant of this compound PII was calculated, it was found that the compound PII has "one A １ － and one HA １ and the acid dissociation constant when "a compound having one A １ － and one HA １ "Compound having two A １ － The acid dissociation constant when the compound becomes "a compound having the formula (I)" corresponds to the acid dissociation constant a1.

[0333] The acid dissociation constant a1 is determined by the above-mentioned method for measuring an acid dissociation constant. The compound PII corresponds to the acid generated when the compound (II) is irradiated with actinic rays or radiation. The two or more structural moieties X may be the same or different. １ － and two or more of the above M １ ＋ may be the same or different.

[0334] The nonionic moiety capable of neutralizing an acid in the structural moiety Z is not particularly limited, and is preferably, for example, a moiety containing a group capable of electrostatically interacting with a proton or a functional group having electrons. Examples of the group capable of electrostatically interacting with a proton or the functional group having electrons include functional groups having a macrocyclic structure such as cyclic polyethers, and functional groups having a nitrogen atom with an unshared electron pair that does not contribute to π-conjugation. The nitrogen atom with an unshared electron pair that does not contribute to π-conjugation is, for example, a nitrogen atom having a partial structure shown in the following formula:

[0335]

[0336] Examples of the partial structure of a functional group having a group or electron capable of electrostatically interacting with a proton include a crown ether structure, an azacrown ether structure, a primary amine structure, a secondary amine structure, a tertiary amine structure, a pyridine structure, an imidazole structure, and a pyrazine structure. Of these, a primary amine structure, a secondary amine structure, a tertiary amine structure, and a tertiary amine structure are preferred.

[0337] Examples of moieties other than cations that Compound (I) and Compound (II) may have are shown below.

[0338]

[0339]

[0340] Specific examples of compound (B) include the compounds described in paragraphs

[0320] to

[0321] of WO 2022 / 172715. The above descriptions are incorporated herein by reference.

[0341] When the composition of the present invention contains compound (B), the content of compound (B) is not particularly limited, but is preferably 0.5 mass% or more, more preferably 1.0 mass% or more, based on the total solid content of the composition of the present invention.When the composition of the present invention contains compound (B), the content of compound (B) is preferably 60.0 mass% or less, more preferably 50.0 mass% or less, and even more preferably 40.0 mass% or less, based on the total solid content of the composition of the present invention.Compound (B) may be used alone, or two or more types may be used.When two or more types are used, it is preferable that the total content is within the above-mentioned preferred content range.

[0342] [Acid Diffusion Controller] The composition of the present invention may further contain an acid diffusion controller (also referred to as "compound (D)"). The acid diffusion controller traps acid generated from a photoacid generator or the like upon exposure and acts as a quencher to suppress the reaction of the resin, which would otherwise be caused by excess acid generated and increase polarity due to the action of the acid in unexposed areas. The type of compound (D) is not particularly limited, and examples thereof include a basic compound (DA), a low-molecular-weight compound (DB) having a nitrogen atom and a group that is cleaved by the action of an acid, and a compound (DC) whose acid diffusion control ability is reduced or eliminated by irradiation with actinic rays or radiation. Examples of the compound (DC) include an onium salt compound (DD) that is a weaker acid relative to the photoacid generator, and a basic compound (DE) whose basicity is reduced or eliminated by irradiation with actinic rays or radiation. Specific examples of the basic compound (DA) include those described in paragraphs

[0132] to

[0136] of WO 2020 / 066824, and specific examples of the basic compound (DE) whose basicity is reduced or eliminated by irradiation with actinic rays or radiation include those described in paragraphs

[0137] to

[0155] of WO 2020 / 066824, and those described in paragraph

[0164] of WO 2020 / 066824. Specific examples of low molecular weight compounds (DB) having a nitrogen atom and having a group that leaves under the action of an acid include those described in paragraphs

[0156] to

[0163] of WO 2020 / 066824. Specific examples of the onium salt compound (DD) that is a weaker acid than the photoacid generator include those described in paragraphs

[0305] to

[0314] of WO 2020 / 158337.

[0343] In addition to the above, for example, known compounds disclosed in paragraphs

[0627] to

[0664] of U.S. Patent Application Publication No. 2016 / 0070167A1, paragraphs

[0095] to

[0187] of U.S. Patent Application Publication No. 2015 / 0004544A1, paragraphs

[0403] to

[0423] of U.S. Patent Application Publication No. 2016 / 0237190A1, and paragraphs

[0259] to

[0328] of U.S. Patent Application Publication No. 2016 / 0274458A1 can be suitably used as the acid diffusion controller.

[0344] When the composition of the present invention contains compound (D), the content of compound (D) is preferably 0.01 to 30.0 mass%, more preferably 0.05 to 20.0 mass%, and even more preferably 0.1 to 15.0 mass%, based on the total solid content of the composition of the present invention. Compound (D) may be used alone, or two or more types may be used. When two or more types are used, the total content thereof preferably falls within the above-mentioned preferred content range.

[0345] [Surfactant] The composition of the present invention may contain a surfactant. When a surfactant is contained, a pattern with better adhesion and fewer development defects can be formed. The surfactant is preferably a fluorine-based and / or silicon-based surfactant. Examples of the fluorine-based and / or silicon-based surfactant include the surfactants disclosed in paragraphs

[0218] and

[0219] of WO 2018 / 193954.

[0346] The surfactant may be used alone or in combination of two or more.

[0347] When the composition of the present invention contains a surfactant, the content of the surfactant is preferably 0.0001 to 2.0 mass%, more preferably 0.0005 to 1.0 mass%, and even more preferably 0.1 to 1.0 mass%, based on the total solid content of the composition of the present invention. The surfactant may be used alone, or two or more types may be used. When two or more types are used, the total content thereof is preferably within the above-mentioned preferred content range.

[0348] [Solvent] The composition of the present invention preferably contains a solvent. The solvent preferably contains (M1) propylene glycol monoalkyl ether carboxylate and (M2) at least one selected from the group consisting of propylene glycol monoalkyl ether, lactate ester, acetate ester, alkoxypropionate ester, linear ketone, cyclic ketone, lactone, and alkylene carbonate. The solvent may further contain components other than components (M1) and (M2).

[0349] Combining the above-mentioned solvent with the above-mentioned resin is preferable in terms of improving the coatability of the composition of the present invention and reducing the number of development defects in the pattern. The above-mentioned solvent has a good balance of the solubility, boiling point, and viscosity of the above-mentioned resin, and therefore can suppress unevenness in the film thickness of the resist film and the occurrence of precipitates during spin coating. Details of component (M1) and component (M2) are described in paragraphs

[0218] to

[0226] of WO 2020 / 004306, the contents of which are incorporated herein by reference.

[0350] When the solvent further contains components other than the components (M1) and (M2), the content of the components other than the components (M1) and (M2) is preferably 5 to 30 mass % based on the total amount of the solvent.

[0351] The content of the solvent in the composition of the present invention is preferably determined so that the solids concentration is 0.5 to 30% by mass, more preferably 1 to 20% by mass, which further improves the coatability of the composition of the present invention.

[0352] [Other Additives] The composition of the present invention may further contain a dissolution inhibiting compound, a dye, a plasticizer, a photosensitizer, a light absorber, and / or a compound that promotes solubility in a developer (for example, a phenol compound having a molecular weight of 1,000 or less, or an alicyclic or aliphatic compound containing a carboxyl group).

[0353] The "dissolution inhibiting compound" is a compound having a molecular weight of 3000 or less, which is decomposed by the action of an acid and has a reduced solubility in an organic developer. The composition of the present invention may or may not contain a compound having a fluorine atom, but it is preferable that the composition does not contain a compound having a fluorine atom.

[0354] The composition of the present invention is also suitable as a photosensitive composition for EUV exposure.

[0355] <Actinic ray- or radiation-sensitive film, pattern forming method> The present invention also relates to an actinic ray- or radiation-sensitive film formed from the composition of the present invention. The actinic ray- or radiation-sensitive film of the present invention is preferably a resist film. The procedure of the pattern forming method using the composition of the present invention is not particularly limited, but preferably includes the following steps: Step 1: forming an actinic ray- or radiation-sensitive film on a substrate using the composition of the present invention; Step 2: exposing the actinic ray- or radiation-sensitive film; Step 3: developing the exposed actinic ray- or radiation-sensitive film using a developer. The procedure of each of the above steps will be described in detail below.

[0356] (Step 1: Actinic Ray- or Radiation-Sensitive Film Forming Step) Step 1 is a step of forming an actinic ray- or radiation-sensitive film on a substrate using the composition of the present invention.

[0357] An example of a method for forming an actinic ray- or radiation-sensitive film on a substrate using the composition of the present invention is to coat the composition of the present invention on the substrate. It is preferable to filter the composition of the present invention as needed before coating. The pore size of the filter is preferably 0.1 μm or less, more preferably 0.05 μm or less, and even more preferably 0.03 μm or less. The filter is preferably made of polytetrafluoroethylene, polyethylene, or nylon.

[0358] The composition of the present invention can be applied to a substrate (e.g., silicon, silicon coated with silicon dioxide) such as those used in the manufacture of integrated circuit devices by a suitable application method such as a spinner or coater. Spin application using a spinner is preferred. The rotation speed when spin application using a spinner is preferably 1,000 to 3,000 rpm (rotations per minute). After application of the composition of the present invention, the substrate may be dried to form an actinic ray-sensitive or radiation-sensitive film. If necessary, various undercoating films (inorganic film, organic film, anti-reflective film) may be formed under the actinic ray-sensitive or radiation-sensitive film.

[0359] An example of a drying method is a method of drying by heating. Heating can be performed by means provided in a normal exposure machine and / or developing machine, and may also be performed using a hot plate or the like. The heating temperature is preferably 80 to 150°C, more preferably 80 to 140°C, and even more preferably 80 to 130°C. The heating time is preferably 30 to 1,000 seconds, more preferably 60 to 800 seconds, and even more preferably 60 to 600 seconds.

[0360] The thickness of the actinic ray-sensitive or radiation-sensitive film is not particularly limited, but is preferably 10 to 120 nm from the viewpoint of forming a finer pattern with higher precision. In particular, when EUV exposure is used, the thickness of the resist film is more preferably 10 to 65 nm, and even more preferably 15 to 50 nm. When ArF immersion exposure is used, the thickness of the resist film is more preferably 10 to 120 nm, and even more preferably 15 to 90 nm.

[0361] A top coat may be formed on top of the actinic ray-sensitive or radiation-sensitive film using a top coat composition. It is preferable that the top coat composition does not mix with the actinic ray-sensitive or radiation-sensitive film and can be uniformly applied to the actinic ray-sensitive or radiation-sensitive film. The top coat is not particularly limited, and a conventionally known top coat can be formed by a conventionally known method. For example, a top coat can be formed based on the description in paragraphs

[0072] to

[0082] of JP 2014-059543 A. For example, a top coat containing a basic compound such as that described in JP 2013-61648 A is preferably formed on the actinic ray-sensitive or radiation-sensitive film. Specific examples of basic compounds that may be contained in the top coat include the basic compounds that may be contained in the composition of the present invention. It is also preferable that the top coat contain a compound containing at least one group or bond selected from the group consisting of an ether bond, a thioether bond, a hydroxyl group, a thiol group, a carbonyl bond, and an ester bond.

[0362] (Step 2: Exposure Step) Step 2 is a step of exposing the actinic ray-sensitive or radiation-sensitive film. Examples of the exposure method include a method of irradiating the formed actinic ray-sensitive or radiation-sensitive film with actinic rays or radiation through a predetermined mask. Examples of actinic rays or radiation include infrared light, visible light, ultraviolet light, far ultraviolet light, extreme ultraviolet light, X-rays, and electron beams, and preferably have a wavelength of 250 nm or less, more preferably 220 nm or less, and particularly preferably have a wavelength of 1 to 200 nm. Specific examples of such lasers include KrF excimer laser (248 nm), ArF excimer laser (193 nm), and F ２ Excimer laser (157 nm), EUV (13.5 nm), X-ray, and electron beam.

[0363] After exposure, it is preferable to bake (heat) the film before developing. Baking promotes the reaction of the exposed areas, resulting in better sensitivity and pattern shape. The heating temperature is preferably 80 to 150°C, more preferably 80 to 140°C, and even more preferably 80 to 130°C. The heating time is preferably 10 to 1,000 seconds, more preferably 10 to 180 seconds, and even more preferably 30 to 120 seconds. Heating can be performed using means provided in a typical exposure machine and / or development machine, and may also be performed using a hot plate or the like. This process is also called post-exposure baking.

[0364] (Step 3: Development Step) Step 3 is a step of developing the exposed actinic ray-sensitive or radiation-sensitive film with a developer to form a pattern. The developer may be an alkaline developer or a developer containing an organic solvent (hereinafter also referred to as an organic developer). In a preferred embodiment, the developer is a developer containing an organic solvent.

[0365] Examples of development methods include a method in which a substrate is immersed in a tank filled with a developer for a certain period of time (dip method), a method in which a developer is piled up on the surface of a substrate by surface tension and left to stand for a certain period of time for development (puddle method), a method in which a developer is sprayed onto the surface of the substrate (spray method), and a method in which a developer is continuously dispensed onto a substrate rotating at a constant speed while a developer dispense nozzle is scanned at a constant speed (dynamic dispense method). Furthermore, after the development step, a step of stopping development while replacing the solvent with another solvent may be carried out. The development time is not particularly limited as long as it is long enough to sufficiently dissolve the resin in the unexposed areas, and is preferably 10 to 300 seconds, more preferably 20 to 120 seconds. The temperature of the developer is preferably 0 to 50°C, more preferably 15 to 35°C.

[0366] The alkaline developer is preferably an aqueous alkaline solution containing an alkali. The type of alkaline aqueous solution is not particularly limited, but examples include aqueous alkaline solutions containing a quaternary ammonium salt, such as tetramethylammonium hydroxide, an inorganic alkali, a primary amine, a secondary amine, a tertiary amine, an alcohol amine, or a cyclic amine. Of these, the alkaline developer is preferably an aqueous solution of a quaternary ammonium salt, such as tetramethylammonium hydroxide (TMAH). Appropriate amounts of alcohols, surfactants, and the like may be added to the alkaline developer. The alkaline concentration of the alkaline developer is usually preferably 0.1 to 20% by mass. The pH of the alkaline developer is usually preferably 10.0 to 15.0.

[0367] The organic developer is preferably a developer containing at least one organic solvent selected from the group consisting of ketone-based solvents, ester-based solvents, alcohol-based solvents, amide-based solvents, ether-based solvents, and hydrocarbon-based solvents.

[0368] The above-mentioned solvents may be mixed in plural, or may be mixed with a solvent other than the above or water. The water content of the developer as a whole is preferably less than 50% by mass, more preferably less than 20% by mass, even more preferably less than 10% by mass, and particularly preferably substantially free of water. The content of the organic solvent in the organic developer is preferably 50% by mass or more and 100% by mass or less, more preferably 80% by mass or more and 100% by mass or less, even more preferably 90% by mass or more and 100% by mass or less, and particularly preferably 95% by mass or more and 100% by mass or less, based on the total amount of the developer.

[0369] (Other Steps) The pattern formation method preferably includes, after step 3, a step of cleaning with a rinse liquid.

[0370] The rinse liquid used in the rinse step after the development step using an alkaline developer can be, for example, pure water. A suitable amount of surfactant may be added to the pure water. A suitable amount of surfactant may be added to the rinse liquid.

[0371] The rinse liquid used in the rinse step after the development step using an organic developer is not particularly limited as long as it does not dissolve the pattern, and a solution containing a general organic solvent can be used. The rinse liquid is preferably a rinse liquid containing at least one organic solvent selected from the group consisting of hydrocarbon solvents, ketone solvents, ester solvents, alcohol solvents, amide solvents, and ether solvents.

[0372] The method for the rinsing step is not particularly limited, and examples include a method in which a rinsing solution is continuously discharged onto a substrate rotating at a constant speed (spin coating method), a method in which a substrate is immersed in a tank filled with the rinsing solution for a certain period of time (dipping method), and a method in which the rinsing solution is sprayed onto the substrate surface (spray method). The pattern formation method may also include a heating step (post-bake) after the rinsing step. This step removes the developer and rinsing solution remaining between and within the pattern by baking. This step also has the effect of annealing the resist pattern and improving the surface roughness of the pattern. The heating step after the rinsing step is typically performed at 40 to 250°C (preferably 90 to 200°C) for typically 10 seconds to 3 minutes (preferably 30 to 120 seconds).

[0373] Alternatively, the substrate may be etched using the formed pattern as a mask. That is, the substrate (or the underlayer film and the substrate) may be processed using the pattern formed in step 3 as a mask to form a pattern on the substrate. The method for processing the substrate (or the underlayer film and the substrate) is not particularly limited, but a method of forming a pattern on the substrate by dry etching the substrate (or the underlayer film and the substrate) using the pattern formed in step 3 as a mask is preferred. The dry etching is preferably oxygen plasma etching.

[0374] The composition of the present invention and various materials used in the pattern formation method (e.g., solvents, developers, rinse solutions, anti-reflective coating compositions, top coat compositions, etc.) preferably do not contain impurities such as metals. The content of impurities contained in these materials is preferably 1 mass ppm (parts per million) or less, more preferably 10 mass ppb (parts per billion) or less, even more preferably 100 mass ppt or less, particularly preferably 10 mass ppt or less, and most preferably 1 mass ppt or less. There is no particular lower limit, and 0 mass ppt or more is preferred. Here, examples of metal impurities include Na, K, Ca, Fe, Cu, Mg, Al, Li, Cr, Ni, Sn, Ag, As, Au, Ba, Cd, Co, Pb, Ti, V, W, and Zn.

[0375] Examples of methods for removing impurities such as metals from various materials include filtration using a filter. Details of filtration using a filter are described in paragraph

[0321] of WO 2020 / 004306.

[0376] Methods for reducing impurities such as metals contained in various materials include, for example, selecting raw materials with a low metal content as raw materials for the various materials, filtering the raw materials for the various materials, and performing distillation under conditions that minimize contamination as much as possible, for example by lining the inside of the apparatus with Teflon (registered trademark).

[0377] In addition to filter filtration, impurities may be removed using an adsorbent, or a combination of filter filtration and an adsorbent may be used. Known adsorbents can be used as the adsorbent, including inorganic adsorbents such as silica gel and zeolite, and organic adsorbents such as activated carbon. In order to reduce impurities such as metals contained in the various materials, it is necessary to prevent the incorporation of metal impurities during the manufacturing process. Whether metal impurities have been sufficiently removed from the manufacturing equipment can be confirmed by measuring the content of metal components contained in the cleaning solution used to clean the manufacturing equipment. The content of metal components contained in the used cleaning solution is preferably 100 parts per trillion (ppt) by mass or less, more preferably 10 ppt by mass or less, and even more preferably 1 ppt by mass or less. There is no particular lower limit, and 0 ppt by mass or more is preferred.

[0378] A conductive compound may be added to an organic processing liquid such as a rinse solution to prevent breakdown of the chemical solution piping and various parts (filters, O-rings, tubes, etc.) due to static charging and subsequent electrostatic discharge. The conductive compound is not particularly limited, but examples include methanol. The amount added is not particularly limited, but in order to maintain favorable development or rinsing characteristics, it is preferably 10% by mass or less, more preferably 5% by mass or less. There is no particular lower limit, but 0.01% by mass or more is preferred. For the chemical solution piping, for example, stainless steel (SUS), or various piping coated with antistatically treated polyethylene, polypropylene, or fluororesin (such as polytetrafluoroethylene or perfluoroalkoxy resin), can be used. Similarly, for the filters and O-rings, antistatically treated polyethylene, polypropylene, or fluororesin (such as polytetrafluoroethylene or perfluoroalkoxy resin), can be used.

[0379] <Method for manufacturing an electronic device> The present invention also relates to a method for manufacturing an electronic device, including the above-mentioned pattern formation method, and an electronic device manufactured by this manufacturing method. A preferred embodiment of the electronic device of the present invention is one that is installed in electrical and electronic equipment (such as home appliances, office automation (OA), media-related equipment, optical equipment, and communication equipment).

[0380] The present invention will be described in more detail below with reference to the following examples. The materials, amounts used, ratios, processing details, and processing procedures shown in the following examples can be appropriately changed without departing from the spirit of the present invention. Therefore, the scope of the present invention should not be construed as being limited by the following examples.

[0381] The various components used in the resist compositions of the examples and comparative examples are shown below.

[0382] <Resin (P)> P-1 to P-22, PX-1, PX-2, and PX-3 were used as resin (P). The structural formula and content (mol%) of each repeating unit contained in P-1 to P-22, PX-1, PX-2, and PX-3, and the weight average molecular weight (Mw) and dispersity (Mw / Mn) of P-1 to P-22, PX-1, PX-2, and PX-3 are shown below. Me represents a methyl group. The content of each repeating unit is the content ratio (molar ratio) of each repeating unit to all repeating units contained in each resin. The weight average molecular weight (Mw) and dispersity (Mw / Mn) of the resin were measured by GPC (carrier: tetrahydrofuran (THF)) (amounts calculated as polystyrene). The weight average molecular weight (Mw), number average molecular weight (Mn), and dispersity (also referred to as molecular weight distribution) (Mw / Mn) of the resin are defined as polystyrene equivalent values ​​measured by Gel Permeation Chromatography (GPC) measurement using a GPC (Gel Permeation Chromatography) apparatus (HLC-8120GPC manufactured by Tosoh Corporation) (solvent: tetrahydrofuran, flow rate (sample injection amount): 10 μL, column: TSK gel Multipore HXL-M manufactured by Tosoh Corporation, column temperature: 40° C., flow rate: 1.0 mL / min, detector: differential refractive index detector). The content of the repeating unit is １３ The properties were measured by C-NMR (nuclear magnetic resonance). Although PX-1, PX-2, and PX-3 are not resins (P), they will be described as resins (P) for convenience.

[0383]

[0384]

[0385]

[0386] The mass content of silicon atoms in Resins P-1 to P-22 and PX-1 to PX-3 was calculated as follows. The results are shown in Table 1. {mass of silicon atoms in Resin (P)} ÷ {mass of all atoms in Resin (P)} × 100

[0387]

[0388] Synthesis Example 1: Synthesis of Resin P-1 8.52 g of compound (M1-1), 0.75 g of compound (M1-2), 0.17 g of compound (M1-3), 0.56 g of compound (M1-4), and 0.25 g of polymerization initiator V-601 (manufactured by Wako Pure Chemical Industries, Ltd.) were dissolved in 24.0 g of cyclohexanone. 6.0 g of cyclohexanone was placed in a reaction vessel, and the monomer solution prepared above was added dropwise to the system at 85°C under a nitrogen gas atmosphere over a period of 4 hours. The reaction solution was heated and stirred for 2 hours and then allowed to cool to room temperature. The reaction solution was added dropwise to 500 g of methanol to precipitate a polymer, which was then filtered. The filtered solid was spray-washed with 100 g of methanol. The washed solid was then dried under reduced pressure to obtain 6.20 g of resin (P-1).

[0389]

[0390] Other resins (P) were synthesized in the same manner as for resin (P-1).

[0391] <Resin (A)> A-1 to A-26 were used as resin (A). The structural formula and content (mol %) of each repeating unit contained in A-1 to A-26, and the weight average molecular weight (Mw) and dispersity (Mw / Mn) of A-1 to A-26 are shown below. The content of each repeating unit is the content ratio (molar ratio) of each repeating unit to all repeating units contained in each resin. The weight average molecular weight (Mw) and dispersity (Mw / Mn) of the resin were measured by GPC (carrier: tetrahydrofuran (THF)) (amounts calculated as polystyrene). The weight average molecular weight (Mw), number average molecular weight (Mn), and dispersity (also referred to as molecular weight distribution) (Mw / Mn) of the resin are defined as polystyrene equivalent values ​​measured by Gel Permeation Chromatography (GPC) measurement using a GPC (Gel Permeation Chromatography) apparatus (HLC-8120GPC manufactured by Tosoh Corporation) (solvent: tetrahydrofuran, flow rate (sample injection amount): 10 μL, column: TSK gel Multipore HXL-M manufactured by Tosoh Corporation, column temperature: 40° C., flow rate: 1.0 mL / min, detector: differential refractive index detector). The content of the repeating unit is １３Measurement was performed by C-NMR (nuclear magnetic resonance).

[0392]

[0393]

[0394]

[0395]

[0396] <Photoacid Generator (B)> PAG-1 to PAG-25 were used as the photoacid generator (B), where Me represents a methyl group.

[0397]

[0398]

[0399] <Acid Diffusion Controller> C-1 to C-15 were used as the acid diffusion controller, where Me represents a methyl group.

[0400]

[0401]

[0402] <Solvents> The solvents used are as follows: S-1: Propylene glycol monomethyl ether acetate (PGMEA) S-2: Propylene glycol monomethyl ether (PGME) S-3: γ-butyrolactone S-4: Ethyl lactate S-5: Cyclohexanone S-6: 2-heptanone

[0403] (ArF Exposure) <Preparation of Resist Compositions> The components shown in Tables 2 and 3 were dissolved in the solvents shown in Tables 2 and 3 to prepare solutions with a solids concentration of 4.0% by mass. These solutions were then filtered through a polyethylene filter with a 0.02 μm pore size to prepare resist compositions (R1-1 to R1-24, R2-1 to R2-24, RX1-1 to RX1-3, and RX2-1 to RX2-3). The solids refer to all components other than the solvent. The resulting resist compositions were used in the examples and comparative examples. In Tables 2 and 3, the "Content (mass %)" column indicates the content (mass %) of each component relative to the total solids content in the resist composition. Tables 2 and 3 also list the amount (mass ratio) of the solvent used.

[0404]

[0405]

[0406] <Pattern Formation Method (1): ArF Exposure, Alkali Development (Positive), Examples 1-1 to 1-24, Comparative Examples 1-1 to 1-3> The resist compositions shown in Table 4 were applied to 6-inch Si wafers that had previously been treated with hexamethyldisilazane (HMDS) using a Tokyo Electron Mark 8 spin coater. The wafers were then dried on a hot plate at 100°C for 60 seconds to obtain resist films with a thickness of 90 nm. Here, 1 inch is 0.0254 m. The wafers on which the resist films had been formed were subjected to pattern exposure through an exposure mask using an ArF excimer laser scanner (ASML, PAS5500 / 1500, wavelength 193 nm, NA 0.50). The wafers were then baked at 115°C for 60 seconds, developed with a 2.38% by weight aqueous tetramethylammonium hydroxide solution (TMAHaq) for 30 seconds, rinsed with pure water, and spin-dried. As a result, a resist pattern having a 1:1 line and space pattern with a line width of 50 nm was obtained.

[0407] <Performance Evaluation> [Development Defects] A cross section of a 1:1 line and space pattern with a line width of 50 nm was observed using a scanning electron microscope (SEM S-9380II manufactured by Hitachi, Ltd.). A case in which no residue was observed visually was rated as A, a case in which slight residue was observed but within an acceptable range was rated as B, and a case in which a large amount of residue was observed was rated as C.

[0408] [Film Thickness Uniformity (In-Plane Film Thickness Uniformity)] The film thickness of the resist film formed on the silicon wafer as described above was measured at 96 points on the outer periphery of the silicon wafer (on the circumference 0.3 cm from the wafer edge) using a VM-3110 (manufactured by Dai-Nippon Screen Mfg. Co., Ltd.), and the standard deviation (3σ) was calculated. Values ​​of less than 0.5 nm were rated A, values ​​of 0.5 nm or more but less than 0.8 nm were rated B, values ​​of 0.8 nm or more but less than 1.0 nm were rated C, and values ​​of 1.0 nm or more were rated E. The smaller the value, the better the film thickness uniformity. Values ​​of A and B were considered to have good coatability.

[0409] The results are shown in Table 4.

[0410]

[0411] <Pattern Formation Method (2): ArF Exposure, Organic Solvent Development (Negative), Examples 2-1 to 2-24, Comparative Examples 2-1 to 2-3> The resist compositions shown in Table 5 were applied to 6-inch Si wafers previously treated with hexamethyldisilazane (HMDS) using a Tokyo Electron Mark 8 spin coater. The wafers were then dried on a hot plate at 100°C for 60 seconds to obtain resist films with a thickness of 90 nm. Here, 1 inch is 0.0254 m. The wafers on which the resist films were formed were subjected to pattern exposure through an exposure mask using an ArF excimer laser scanner (ASML, PAS5500 / 1500, wavelength 193 nm, NA 0.50). The wafers were then baked at 115°C for 60 seconds, developed with n-butyl acetate for 30 seconds, and spin-dried. This resulted in a 1:1 line-and-space resist pattern with a line width of 50 nm.

[0412] The development defects and film thickness uniformity were evaluated in the same manner as in the performance evaluation of the above-mentioned pattern formation method (1). The results are shown in Table 5.

[0413]

[0414] (EUV Exposure) <Preparation of Resist Compositions> Each component shown in Tables 6 to 7 was dissolved in the corresponding solvent shown in Tables 6 to 7 and mixed to a solids concentration of 2.0% by mass. The resulting mixture was then filtered, in this order, first through a polyethylene filter with a 50 nm pore size, then a nylon filter with a 10 nm pore size, and finally a polyethylene filter with a 5 nm pore size, to prepare resist compositions (R3-1 to R3-10, R4-1 to R4-10, RX3-1 to RX3-3, and RX4-1 to RX4-3). Note that the "solids" refers to all components other than the solvent. The resulting resist compositions were used in the Examples and Comparative Examples. In Tables 6 to 7, the "Content (mass %)" column indicates the content (mass %) of each component relative to the total solids content in the resist composition. Tables 6 to 7 also list the amount (mass ratio) of the solvent used.

[0415]

[0416]

[0417] <Pattern Forming Method (3): EUV Exposure, Alkali Development (Positive), Examples 3-1 to 3-10, Comparative Examples 3-1 to 3-3> An underlayer film-forming composition AL412 (manufactured by Brewer Science) was applied to a silicon wafer and baked at 205°C for 60 seconds to form an underlayer film with a thickness of 20 nm. A resist composition shown in Table 8 was applied to the underlayer film and baked at 100°C for 60 seconds to form a resist film with a thickness of 30 nm. Using an EUV exposure system (manufactured by Exitech, Micro Exposure Tool, NA 0.3, Quadrupol, outer sigma 0.68, inner sigma 0.36), the silicon wafer having the resulting resist film was subjected to pattern irradiation. A mask with a line size of 25 nm and a line:space ratio of 1:1 was used as the reticle. The exposed resist film was baked at 90° C. for 60 seconds, developed with an aqueous solution of tetramethylammonium hydroxide (2.38% by mass) for 30 seconds, rinsed with pure water for 30 seconds, and then spin-dried to obtain a positive pattern.

[0418] <Performance Evaluation> [Development Defects] A cross section of a 1:1 line and space pattern with a line width of 25 nm was observed using a scanning electron microscope (SEM S-9380II manufactured by Hitachi, Ltd.). A case in which no residue was observed visually was rated as A, a case in which slight residue was observed but within an acceptable range was rated as B, and a case in which a large amount of residue was observed was rated as C.

[0419] [Film Thickness Uniformity (In-Plane Film Thickness Uniformity)] The film thickness of the resist film formed on the silicon wafer as described above was measured at 96 points on the outer periphery of the silicon wafer (on the circumference 0.3 cm from the wafer edge) using a VM-3110 (manufactured by Dai-Nippon Screen Mfg. Co., Ltd.), and the standard deviation (3σ) was calculated. Values ​​of less than 0.5 nm were rated A, values ​​of 0.5 nm or more but less than 0.8 nm were rated B, values ​​of 0.8 nm or more but less than 1.0 nm were rated C, and values ​​of 1.0 nm or more were rated E. The smaller the value, the better the film thickness uniformity. Values ​​of A and B were considered to have good coatability.

[0420] The results are shown in Table 8.

[0421]

[0422] <Pattern Forming Method (4): EUV Exposure, Organic Solvent Development (Negative), Examples 4-1 to 4-10, Comparative Examples 4-1 to 4-3> An underlayer film-forming composition AL412 (manufactured by Brewer Science) was applied to a silicon wafer and baked at 205°C for 60 seconds to form an underlayer film with a thickness of 20 nm. A resist composition shown in Table 9 was applied to the underlayer film and baked at 100°C for 60 seconds to form a resist film with a thickness of 30 nm. Using an EUV exposure system (manufactured by Exitech, Micro Exposure Tool, NA 0.3, Quadrupol, outer sigma 0.68, inner sigma 0.36), the silicon wafer having the resulting resist film was subjected to pattern irradiation. A mask with a line size of 25 nm and a line:space ratio of 1:1 was used as the reticle. The exposed resist film was baked at 90° C. for 60 seconds, developed with n-butyl acetate for 30 seconds, and then spin-dried to obtain a negative pattern.

[0423] The development defects and film thickness uniformity were evaluated in the same manner as in the performance evaluation of the above-mentioned pattern formation method (3). The results are shown in Table 9.

[0424]

[0425] In Examples 4-1 to 4-10 and Comparative Examples 4-1 to 4-3, when developers R-01 to R-05 shown in Table 10 were used instead of n-butyl acetate, results similar to those in Table 9 were obtained.

[0426]

[0427] The results in Tables 4 to 5 and Tables 8 to 9 show that the resist compositions used in the examples suppress development defects and provide excellent film thickness uniformity in the formation of fine patterns.

[0428] The present invention can provide an actinic ray-sensitive or radiation-sensitive resin composition that suppresses development defects and has excellent film thickness uniformity in the formation of a fine pattern. The present invention can also provide an actinic ray-sensitive or radiation-sensitive film formed from the actinic ray-sensitive or radiation-sensitive resin composition, a pattern formation method using the actinic ray-sensitive or radiation-sensitive resin composition, and a method for manufacturing an electronic device.

[0429] Although the present invention has been described in detail and with reference to specific embodiments, it will be apparent to those skilled in the art that various changes and modifications can be made without departing from the spirit and scope of the present invention. This application is based on a Japanese patent application (Patent Application No. 2024-100857) filed on June 21, 2024, the contents of which are incorporated herein by reference.

Claims

1. An actinic ray- or radiation-sensitive resin composition containing: a resin (P) having a weight-average molecular weight of 8,000 or more, the resin (P) having a repeating unit containing a silicon atom and a repeating unit containing a group that decomposes when exposed to an alkaline developer, thereby increasing the solubility in the alkaline developer; and a resin (A) different from the resin (P), the polarity of which increases when exposed to an acid.

2. The actinic ray-sensitive or radiation-sensitive resin composition according to claim 1, wherein the resin (P) has a repeating unit represented by the following general formula (1) or the following general formula (2): In general formula (1), X １ represents a hydrogen atom, a halogen atom, or an alkyl group. １ represents a hydrogen atom or a substituent. １ represents an organic group containing a silicon atom. ２ represents a hydrogen atom, a halogen atom, or an alkyl group. ２ represents a hydrogen atom or a substituent. ２ represents an aromatic hydrocarbon group. ２ represents an organic group containing a silicon atom. ２ and Ar ２ may be bonded to each other to form a ring. n represents a positive integer. When n is 2 or more, a plurality of Y ２ may be the same as or different from each other.

3. The actinic ray-sensitive or radiation-sensitive resin composition according to claim 1 or 2, wherein the resin (P) has a repeating unit represented by the following general formula (3) or the following general formula (4): In general formula (3), X ３ represents a hydrogen atom, a halogen atom, or an alkyl group. ３１ represents a divalent linking group. ３１ , R ３２ , R ３３ each independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, an alkenyl group, an alkoxy group, or an organic group containing a silicon atom. ３１ , R ３２ , R ３３ When all of R represent alkyl groups, R ３１ and R ３２ and R ３３ In the general formula (4), the total number of carbon atoms in X is 4 or more. ４ represents a hydrogen atom, a halogen atom, or an alkyl group. ４ represents an aromatic hydrocarbon group. ４１ represents a single bond or a divalent linking group. ４１ , R ４２ , R ４３ each independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, an alkenyl group, an alkoxy group, or an organic group containing a silicon atom. n4 represents a positive integer. When n4 is 2 or more, a plurality of -L ４１ -Si(R ４１ ) (R ４２ ) (R ４３ ) may be the same or different.

4. The actinic ray-sensitive or radiation-sensitive resin composition according to claim 1 or 2, wherein the group in the resin (P) that decomposes under the action of an alkaline developer and increases the solubility in the alkaline developer has a lactone group.

5. The actinic ray-sensitive or radiation-sensitive resin composition according to claim 1 or 2, wherein the resin (P) does not contain a fluorine atom.

6. The actinic ray-sensitive or radiation-sensitive resin composition according to claim 1 or 2, wherein the content of the resin (P) is 0.1 mass % or more and less than 10 mass % based on the total solid content of the actinic ray-sensitive or radiation-sensitive resin composition.

7. The actinic ray-sensitive or radiation-sensitive resin composition according to claim 1 or 2, wherein the mass content of silicon atoms in the resin (P) is 0.1 to 20.0%.

8. The actinic ray-sensitive or radiation-sensitive resin composition according to claim 1 or 2, which does not contain a compound having a fluorine atom.

9. An actinic ray-sensitive or radiation-sensitive film formed from the actinic ray-sensitive or radiation-sensitive resin composition according to claim 1 or 2.

10. A pattern forming method comprising the steps of: forming an actinic ray-sensitive or radiation-sensitive film on a substrate using the actinic ray-sensitive or radiation-sensitive resin composition according to claim 1 or 2; exposing the actinic ray-sensitive or radiation-sensitive film; and developing the exposed actinic ray-sensitive or radiation-sensitive film using a developer.

11. The pattern forming method according to claim 10, wherein the developer contains an organic solvent.

12. A method for manufacturing an electronic device, comprising the pattern formation method according to claim 10.

Images