Crystal pulling method and system for fabricating large-diameter silicon single crystal, and silicon single crystal and medium

Abstract

A crystal pulling method and system for fabricating a large-diameter silicon single crystal, and a silicon single crystal and a medium. The method can comprise: performing global two-dimensional simulation on a crystal pulling process, and acquiring a global temperature distribution, a velocity field distribution and an initial solid-liquid interface value during the crystal pulling process under a preset crystal pulling apparatus and a preset crystal pulling parameter; on the basis of the global temperature distribution and the velocity field distribution, determining a boundary condition, and on the basis of the boundary condition, performing local three-dimensional simulation on the crystal pulling process to determine a target solid-liquid interface value; adjusting the preset crystal pulling parameter until the initial solid-liquid interface value is equal to the target solid-liquid interface value within a threshold range, and using the adjusted preset crystal pulling parameter as a reference crystal pulling parameter; on the basis of the reference crystal pulling parameter, simulating and calculating a simulated defect during the crystal pulling process; on the basis of the simulated defect, iteratively optimizing the reference crystal pulling parameter until the simulated defect meets a preset condition, and using the optimized reference crystal pulling parameter as a target crystal pulling parameter; and fabricating a defect-free silicon single crystal.

Description

Crystal pulling method and system for manufacturing large-diameter silicon single crystal, silicon single crystal and medium

[0001] Cross-reference to Related Applications

[0002] This application claims priority to Chinese Patent Application No. 202410827909.8 filed on June 25, 2024 in China, the content of which is incorporated herein by reference in its entirety. TECHNICAL FIELD

[0003] Embodiments of the present disclosure relate to the technical field of semiconductor manufacturing, and particularly relate to a crystal pulling method and system for manufacturing large-diameter silicon single crystal, silicon single crystal and medium. BACKGROUND

[0004] In recent years, with the development of semiconductor chips, high-end process chips have higher and higher requirements for silicon wafer native defects, including crystal originated particle (COP) defects caused by vacancy aggregation and large lattice interstitial type dislocation cluster defects (LDP) caused by interstitial atom clusters. These defects may cause deterioration of gate insulation and leakage current in the fabrication process (Fab) process in the back end.

[0005] The current mainstream method for controlling crystal native defects in crystal pulling is the V / G theory based on the Voronkov model. The model explains that when the ratio of crystal pulling speed V to temperature gradient G at the solid-liquid interface V / G is greater than a critical value ξ, COP defects will be generated, and when V / G is less than the critical value ξ, LDP defects will be generated. Only when V / G is near a certain critical value ξ, can a defect free crystal be obtained. However, the critical value ξ is not a fixed value. Therefore, in related technologies, a large number of experiments are usually required to determine the distribution of defects under different thermal fields and different process conditions, resulting in high cost of producing defect free crystals. SUMMARY

[0006] Therefore, embodiments of the present disclosure aim to provide a crystal pulling method and system for manufacturing large-diameter silicon single crystal, silicon single crystal and medium, which can quickly determine the crystal pulling parameters through numerical simulation calculation, and effectively control the silicon melt flow to stably form large-diameter silicon single crystal, thereby solving the technical problem of high cost of producing defect free crystals in related technologies.

[0007] In a first aspect, embodiments of the present disclosure provide a crystal pulling method for manufacturing large-diameter silicon single crystal, comprising:

[0008] simulate the crystal pulling process globally in two dimensions to obtain a global temperature distribution, a velocity field distribution and an initial solid-liquid interface value in the crystal pulling process under a preset crystal pulling device model and preset crystal pulling parameters;

[0009] determine a boundary condition according to the global temperature distribution and the velocity field distribution, and simulate the crystal pulling process locally in three dimensions based on the boundary condition to determine a target solid-liquid interface value;

[0010] In the global two-dimensional simulation, the preset crystal pulling parameters are adjusted until the initial solid-liquid interface value and the target solid-liquid interface value are equal within a threshold range, and the adjusted preset crystal pulling parameters are used as reference crystal pulling parameters;

[0011] simulate the simulation defects in the crystal pulling process according to the reference crystal pulling parameters;

[0012] According to the simulation defects, the reference crystal pulling parameters are iteratively optimized until the simulation defects meet a preset condition, and the optimized reference crystal pulling parameters are used as target crystal pulling parameters;

[0013] Use the target crystal pulling parameters to manufacture a defect-free silicon single crystal, and the target crystal pulling parameters include thermal field parameters and crystal pulling process parameters.

[0014] In some examples, the local three-dimensional simulation of the crystal pulling process based on the boundary condition to determine the target solid-liquid interface value includes:

[0015] According to the boundary, a simulation scenario is determined, and a simulation magnetic field is added to the simulation scenario to simulate the crystal pulling process in three dimensions;

[0016] Based on the thermal field parameters in the three-dimensional simulation process, the physical parameters of the single crystal silicon, the turbulent flow model of the silicon melt and the flow boundary layer, the target solid-liquid interface value is determined.

[0017] In some examples, the step of adjusting the preset crystal pulling parameters until the initial solid-liquid interface value and the target solid-liquid interface value are equal within a threshold range includes that the threshold range is within 10%.

[0018] In some examples, the step of simulating the simulation defects in the crystal pulling process according to the reference preset crystal pulling parameters includes:

[0019] determine the crystal pulling parameter distribution at the initial state of crystal pulling;

[0020] simulate the defect distribution of the initial state of crystal pulling based on the crystal pulling parameter distribution;

[0021] correct the defect distribution according to a correction coefficient, and determine the defect cluster of the initial state of crystal pulling based on the corrected defect distribution.

[0022] In some examples, the defect distribution includes a point defect concentration of interstitial atoms and a vacancy point defect concentration;

[0023] The correcting the defect distribution according to the correction coefficient includes:

[0024] The correction coefficient is determined according to historical data, and at least one of the point defect concentration of interstitial atoms and the vacancy point defect concentration is corrected based on the correction coefficient.

[0025] In some examples, when the point defect concentration of interstitial atoms is corrected, the correction coefficient is greater than or equal to 1.0 and less than or equal to 1.3.

[0026] In some examples, the preset crystal pulling parameters include a material viscosity value and a thermal conductivity of a melt;

[0027] The adjusting the preset crystal pulling parameters until the initial solid-liquid interface value and the target solid-liquid interface value are equal within a threshold range includes:

[0028] The material viscosity value and / or the thermal conductivity are adjusted until the initial solid-liquid interface value and the target solid-liquid interface value are equal within a threshold range.

[0029] In some examples, the iteratively optimizing the reference crystal pulling parameters according to the simulated defects until the simulated defects meet a preset condition includes that when the simulated defects meet COP and P-band (V-Cluster> 25nm), Pv (V-Cluster= 12-25nm), Pi (V-Cluster< 12nm and I-Cluster< 0.5nm), LDP (I-Cluster< 0.5nm), the optimized reference crystal pulling parameters are taken as target crystal pulling parameters.

[0030] In a second aspect, the embodiments of the present disclosure provide a system for manufacturing a large-diameter silicon single crystal by crystal pulling, comprising:

[0031] A parameter acquisition module is configured to perform global two-dimensional simulation on the crystal pulling process, and acquire a global temperature distribution, a velocity field distribution, and an initial solid-liquid interface value in the crystal pulling process under a preset crystal pulling device model and preset crystal pulling parameters;

[0032] A first determination module is configured to determine a boundary condition according to the global temperature distribution and the velocity field distribution, perform local three-dimensional simulation on the crystal pulling process based on the boundary condition, and determine a target solid-liquid interface value;

[0033] The first adjusting module adjusts the preset crystal pulling parameter in the global two-dimensional simulation until the initial solid-liquid interface value and the target solid-liquid interface value are equal within a threshold range, and takes the adjusted preset crystal pulling parameter as a reference crystal pulling parameter.

[0034] The second determining module simulates and calculates a simulation defect in the crystal pulling process according to the reference crystal pulling parameter.

[0035] The second adjusting module is configured to iteratively optimize the reference crystal pulling parameter according to the simulation defect until the simulation defect meets a preset condition, and take the optimized reference crystal pulling parameter as a target crystal pulling parameter.

[0036] The crystal manufacturing module is configured to manufacture a defect-free silicon single crystal by using the target crystal pulling parameter, wherein the target crystal pulling parameter includes a thermal field parameter and a crystal pulling process parameter.

[0037] In a third aspect, the embodiments of the present disclosure provide a silicon single crystal, comprising:

[0038] The silicon single crystal is manufactured by the crystal pulling method for manufacturing a large-diameter silicon single crystal according to any one of the first aspect.

[0039] The number of defects with a size of 19 nm in any wafer obtained from the silicon single crystal is less than or equal to 25.

[0040] In a fourth aspect, the embodiments of the present disclosure provide an electronic device, comprising a processor and a memory; the processor is configured to execute instructions stored in the memory to implement the crystal pulling method for manufacturing a large-diameter silicon single crystal according to the first aspect.

[0041] In a fifth aspect, the embodiments of the present disclosure provide a computer storage medium, the storage medium stores at least one instruction, and the at least one instruction is used to be executed by a processor to implement the crystal pulling method for manufacturing a large-diameter silicon single crystal according to the first aspect.

[0042] The embodiments of the present disclosure provide a crystal pulling method, a system, a silicon single crystal and a medium for manufacturing a large-diameter silicon single crystal; on the one hand, based on two-dimensional simulation, a three-dimensional simulation is used to determine a target solid-liquid interface value, and then a preset crystal pulling parameter is adjusted, so that the solid-liquid interface value in the two-dimensional simulation process is the same as the solid-liquid interface value in the three-dimensional simulation, and the simulation accuracy in the crystal pulling process can be improved. On the other hand, the boundary conditions of the three-dimensional simulation are determined according to the global temperature distribution and the velocity field distribution obtained by the two-dimensional simulation, which can reduce the model size of the three-dimensional simulation, reduce the simulation parameters, and improve the simulation efficiency. In addition, the crystal pulling parameters are optimized according to the simulation defects in the simulation process, so that the target crystal pulling parameters obtained by simulation can be directly used for producing defect-free wafers, a large number of trial and error can be avoided through simulation, the experimental materials and time cost are significantly reduced, further, the adjustment time in the production process is reduced, and the production efficiency is improved. BRIEF DESCRIPTION OF DRAWINGS

[0043] FIG. 1 is a flowchart of a crystal pulling method for manufacturing a large-diameter silicon single crystal according to an embodiment of the present disclosure.

[0044] FIG. 2 is a schematic diagram of a temperature distribution of two-dimensional simulation according to an embodiment of the present disclosure.

[0045] FIG. 3 is a schematic diagram of a temperature distribution of three-dimensional simulation according to an embodiment of the present disclosure.

[0046] FIG. 4 is a flowchart of determining simulation defects according to an embodiment of the present disclosure.

[0047] FIG. 5 is a comparison diagram of defects related to thermal stress and correction coefficient according to an embodiment of the present disclosure.

[0048] FIG. 6 is a flowchart of another crystal pulling method for manufacturing a large-diameter silicon single crystal according to an embodiment of the present disclosure.

[0049] FIG. 7 is a comparison diagram of simulation results and experimental results of a crystal growth variable pulling speed test defect according to an embodiment of the present disclosure.

[0050] FIG. 8 is a comparison diagram of simulation results and experimental results of a crystal growth constant pulling speed test defect according to an embodiment of the present disclosure.

[0051] FIG. 9 is a structural schematic diagram of a crystal pulling system for manufacturing a large-diameter silicon single crystal according to an embodiment of the present disclosure.

[0052] FIG. 10 is a structural schematic diagram of an electronic device according to an embodiment of the present disclosure.

[0053] The specific embodiments of the present disclosure have been shown by the above-described drawings, and will be described in more detail hereinafter. These drawings and detailed description are not intended to limit the scope of the present disclosure concept in any way, but to illustrate the present disclosure concept to those skilled in the art by referring to specific embodiments. DETAILED DESCRIPTION

[0054] Exemplary embodiments will be described in detail herein with reference to the drawings. In the following description, the same numbers refer to the same elements throughout the drawings. The embodiments described in the following exemplary embodiments are not meant to represent all embodiments consistent with the present disclosure. Rather, they are merely examples of apparatuses and methods consistent with some aspects of the present disclosure as detailed in the appended claims.

[0055] In the field of semiconductor material preparation, particularly in the process of single crystal silicon growth, crystal pulling simulation technology plays a crucial role. Crystal pulling simulation technology predicts and optimizes physical phenomena in the crystal growth process, such as temperature distribution, solid-liquid interface shape, crystal stress and defect formation, through numerical simulation methods.

[0056] The simulation technology in the related art can predict the defect distribution in the crystal growth process, reduce defects and improve the quality of the crystal by adjusting the crystal pulling parameters. Although the related crystal pulling simulation technology has made significant progress, it still faces some challenges, as follows:

[0057] Although the related two-dimensional simulation technology can quickly calculate the basic parameters of crystal growth, such as temperature distribution and velocity field, it usually assumes that the crystal growth is axisymmetric, ignoring the three-dimensional effects that may occur in the actual crystal growth process, such as complex phenomena caused by thermal stress, crystal stress and asymmetric flow. These factors can lead to the formation of defects inside the crystal, such as void defects (COP) and large interstitial-type dislocation clusters (LDP), which have a significant impact on the performance of semiconductor devices.

[0058] The related three-dimensional simulation technology can more accurately capture the complexity of crystal growth, including asymmetric flow and heat transfer, etc., but compared to two-dimensional simulation, three-dimensional simulation needs to handle more data and more complex boundary conditions, resulting in a significant increase in calculation time. In the actual production environment, it is crucial to quickly obtain simulation results for real-time adjustment and optimization of process parameters.

[0059] Secondly, the crystal pulling process involves multiple interdependent process parameters, such as pulling speed, temperature control, rotation speed, etc. The related simulation technology has limitations in handling the optimization of these parameters, making it difficult to consider multiple related factors simultaneously to find the best process conditions to produce high-quality single crystal silicon.

[0060] Based on this, the present disclosure first provides a crystal pulling method for manufacturing a large-diameter silicon single crystal. Referring to FIG. 1, the crystal pulling method for manufacturing a large-diameter silicon single crystal can include steps S110 to S160.

[0061] In step S110, a global two-dimensional simulation is performed on the crystal pulling process to obtain a global temperature distribution, a velocity field distribution, and an initial solid-liquid interface value in the crystal pulling process under a preset crystal pulling device model and a preset crystal pulling parameter.

[0062] In some example embodiments of the present disclosure, the above-mentioned crystal pulling process can be first simulated globally in two dimensions. Specifically, based on a preset crystal pulling parameter, a two-dimensional simulation of the crystal pulling process can be performed on a preset crystal pulling device model to obtain the global temperature distribution, the velocity field distribution, and the initial solid-liquid interface value in the above-mentioned crystal pulling process.

[0063] The global temperature distribution can include the temperature distribution of the crystal when it grows to each size in the crystal pulling process. For example, it includes the temperature distribution when the crystal grows to 100 mm, the temperature distribution when it grows to 200 mm, and so on.

[0064] When simulating the above-mentioned crystal pulling process in two dimensions, referring to FIG. 2, the process of the crystal 21 in the crystal growth furnace can be simulated, wherein the crystal growth furnace can include a heat shield 22 (heat shield) reflector, a crucible 24, a heater 25, and thermal insulation material 26, etc. The raw material melt 23 of the crystal is contained in the crucible 24.

[0065] The crucible is a double-layer structure composed of an inner quartz crucible and an outer graphite crucible, is a container for containing the melt, and is usually made of high-temperature resistant material; the outer side of the crucible is provided with a heater 25 for providing heat for crystal growth; the outer side of the heater is provided with thermal insulation material for reducing heat loss and maintaining stable temperature in the furnace; a reflector is provided above the crucible, which blocks the radiant heat from the silicon melt in the crucible or the heater or the sidewall of the crucible during crystal growth, and for the vicinity of the solid-liquid interface as the crystal growth interface, inhibits the thermal diffusion to the low-temperature water-cooled body, controls the temperature gradient along the axial direction of the crystal center and the crystal periphery together with the water-cooled body, and controls the temperature range of different regions in the crystal growth furnace.

[0066] The temperature distribution of each component can be obtained in the two-dimensional simulation process as a global temperature distribution in the two-dimensional simulation process. When calculating the initial solid-liquid interface value based on the preset crystal pulling parameters, the position of the solid-liquid interface can be determined first. The solid-liquid interface is a key area of crystal growth, and its shape and stability directly affect the quality of the crystal and the formation of defects. Then, at the solid-liquid interface, the initial solid-liquid interface value is calculated according to the physical model and the numerical simulation result. The specific calculation process of the initial solid-liquid interface value can refer to related technologies, and will not be described in detail in this example embodiment.

[0067] In step S120, the boundary conditions are determined according to the global temperature distribution and the velocity field distribution, and the local three-dimensional simulation of the crystal pulling process is performed based on the boundary conditions to determine the target solid-liquid interface value.

[0068] In some example embodiments of the present disclosure, the boundary conditions of the three-dimensional simulation can be determined according to the global temperature distribution and the velocity field distribution in the simulation result of the two-dimensional simulation process. Specifically, the boundary conditions can include temperature field and velocity field, etc. The boundary conditions can be determined in the output of the two-dimensional simulation, which is used to determine the boundary of the three-dimensional simulation, i.e. to constrain the model size in the three-dimensional simulation process, so as to reduce the overall calculation amount in the simulation process.

[0069] For example, referring to FIG. 3, for the growth of a 300mm large-size single crystal silicon crystal, since a horizontal magnetic field is used for crystal pulling, the flow inside the melt is three-dimensional and asymmetric. Therefore, in order to more accurately simulate the actual situation of the growth of a 300mm semiconductor single crystal silicon, a three-dimensional simulation must be used. When obtaining the model of the three-dimensional simulation, part of the area in the model of the two-dimensional simulation can be obtained as the model of the three-dimensional simulation according to the boundary conditions.

[0070] In some examples of the present disclosure, after the boundary conditions of the three-dimensional simulation are determined, the required horizontal magnetic field, CUSP magnetic field, etc. can be added, and the target solid-liquid interface value in the three-dimensional simulation process can be calculated based on the thermal field parameters in the simulation process, the physical parameters of the single crystal silicon, the turbulent flow model of the silicon melt, the flow boundary layer, etc. Specifically, the thermal field parameters, the physical parameters of the single crystal silicon, the turbulent flow model of the silicon melt, the flow boundary layer, etc. are input into the calculation software for calculating the target solid-liquid interface value to obtain the target solid-liquid interface value. The specific type of the calculation software is not specifically limited in this example embodiment, which can refer to related technologies.

[0071] The thermal field parameters refer to a series of parameters that affect the heat distribution and transfer during crystal growth. These parameters can include the temperature of the heater, the heat flux density, the cooling rate, the thermal conductivity of the heat preservation material, and the geometry of the crystal growth furnace, etc. The physical property parameters of monocrystalline silicon refer to parameters that describe the physical and chemical properties of monocrystalline silicon, such as thermal conductivity, specific heat capacity, density, melting point, crystal structure, and doping concentration, etc. The turbulence model is a mathematical model used to describe and predict turbulent flow, which takes into account factors such as fluid viscosity, velocity distribution, and temperature gradient. The flow boundary layer refers to the layer of fluid near the surface of a solid, where the velocity of the fluid gradually transitions from zero at the surface of the solid to the free stream velocity. In crystal growth, the behavior of the flow boundary layer affects heat transfer, mass transport, and defect transport. Optimizing the characteristics of the flow boundary layer, such as thickness and velocity distribution, can help control the quality and rate of crystal growth.

[0072] In step S130, in the global two-dimensional simulation, the preset crystal pulling parameters are adjusted until the initial solid-liquid interface value is equal to the target solid-liquid interface value within the threshold range, and the adjusted preset crystal pulling parameters are taken as the reference crystal pulling parameters.

[0073] In some example embodiments of the present disclosure, after determining the above-mentioned target solid-liquid interface value, the above-mentioned preset crystal pulling parameters can be adjusted based on the above-mentioned target solid-liquid interface value to perform parameter fitting on the process of the above-mentioned three-dimensional simulation, so that the above-mentioned initial solid-liquid interface value is equal to the target solid-liquid interface value within the threshold range, and the above-mentioned adjusted preset crystal pulling parameters are taken as the reference crystal pulling parameters. Specifically, the material viscosity value and / or the thermal conductivity of the melt in the above-mentioned crystal pulling parameters can be adjusted to perform parameter fitting on the three-dimensional simulation process.

[0074] The threshold range is used to represent the allowable error range, which can be within an error range of 10%, or a specific numerical value, for example, it can be 1-2 mm. Of course, the specific numerical value can be customized according to user requirements, which will not be described in detail in the present example embodiment.

[0075] In step S140, the simulation defects in the crystal pulling process are simulated according to the reference crystal pulling parameters.

[0076] In some example embodiments of the present disclosure, after the above-mentioned reference crystal pulling parameters are calculated, the simulation defects in the crystal pulling process can be simulated according to the above-mentioned reference crystal pulling parameters. Specifically, the simulation defects in the crystal pulling process can be simulated based on two-dimensional simulation and initial steady-state calculation, defect cluster calculation, etc. according to the above-mentioned reference crystal pulling parameters.

[0077] In step S150, the reference crystal pulling parameters are iteratively optimized according to the simulation defects until the simulation defects satisfy the preset conditions, and the optimized reference crystal pulling parameters are taken as the target crystal pulling parameters.

[0078] In the disclosed example embodiment, after obtaining the simulated defects, the reference crystal pulling parameters can be adjusted based on the simulated defects, and the simulated defects are calculated again, and the process of adjusting the reference crystal pulling parameters is executed cyclically. For example, until the simulated defects meet the preset condition, wherein the preset condition can be that the obtained simulated defects are the least, that is, the optimal reference crystal pulling parameters are obtained, or the number of simulated defects meets the process requirement, which can be set according to user demand, and in the example embodiment, no further description is made.

[0079] It should be noted that in the adjustment of the reference crystal pulling parameters, part or all of the reference crystal pulling parameters can be adjusted according to the crystal pulling experience and the V / G theory, and the specific parameters to be adjusted can also be set according to user demand, and in the example embodiment, no further description is made.

[0080] In step S160, a defect-free silicon single crystal is manufactured using the target crystal pulling parameters, which include thermal field parameters and crystal pulling process parameters.

[0081] After obtaining the target crystal pulling parameters, a crystal pulling process can be performed based on the target crystal pulling parameters to obtain a defect-free single crystal, wherein the target crystal pulling parameters include thermal field parameters and crystal pulling process parameters, and the crystal pulling process parameters can include pulling speed, temperature control, rotation speed, gas environment, crucible position, type, concentration and addition time of dopant, crystal diameter, cooling rate, etc. during the crystal pulling process. The specific content of the crystal pulling process parameters can also be added or deleted according to the process requirement, and in the example embodiment, no further description is made.

[0082] The crystal pulling method for manufacturing large-diameter silicon single crystals provided by the example embodiment of the present disclosure can, on the one hand, determine the target solid-liquid interface value by using three-dimensional simulation on the basis of two-dimensional simulation, and then adjust the preset crystal pulling parameters so that the solid-liquid interface value in the two-dimensional simulation process is the same as the solid-liquid interface value in the three-dimensional simulation, thereby improving the simulation accuracy in the crystal pulling process. On the other hand, the boundary conditions of the three-dimensional simulation are determined according to the global temperature distribution obtained by the two-dimensional simulation, which can reduce the model size of the three-dimensional simulation and the simulation parameters, thereby improving the simulation efficiency. On the other hand, the crystal pulling parameters are optimized according to the simulated defects in the simulation process, so that the target crystal pulling parameters obtained by simulation can be directly used to produce defect-free wafers. Through simulation, a large number of trial and error can be avoided, and the experimental material and time cost can be significantly reduced. Further, the adjustment time in the production process can be reduced, and the production efficiency can be improved.

[0083] In some example embodiments of the present disclosure, the preset crystal pulling parameters can include the material viscosity value and thermal conductivity of the melt, the thermal field conditions in the simulation process, and the crystal pulling process parameters.

[0084] In the process of adjusting the preset crystal pulling parameters until the initial solid-liquid interface value and the target solid-liquid interface value are equal within the threshold range, the parameters that can affect the solid-liquid interface value can be adjusted, and the parameters that can affect the solid-liquid interface value can be obtained according to experience or experiment, and the specific obtaining process is not described here. For example, one or more of the above material viscosity values and thermal conductivities can be adjusted to make the above initial solid-liquid interface value and the above target solid-liquid interface value equal within the threshold range.

[0085] For example, the material viscosity values of the melt at different lengths of the crystal during the growth process can be adjusted to make the above initial solid-liquid interface value and the above target solid-liquid interface value equal within the threshold range. For example, Table 1 is the material viscosity value of the melt set at different crystal lengths when the initial solid-liquid interface value is equal to the target solid-liquid interface value within the threshold range.

[0086] Table 1

[0087] According to Table 1, to make the above initial solid-liquid interface value and the above target solid-liquid interface value equal at different crystal lengths, different or the same material viscosity values of the melt need to be set, that is, different melt viscosity values need to be configured according to the current length of the crystal generated.

[0088] In some example embodiments of the present disclosure, referring to FIG. 4, when determining the simulated defects in the crystal pulling process according to the adjusted preset crystal pulling parameters, steps S410 to S440 can be included.

[0089] In step S410, the crystal pulling parameter distribution at the initial state of crystal pulling is determined.

[0090] In some example embodiments of the present disclosure, the initial state of crystal pulling can be when the length of the above crystal is 100 mm, or when the crystal is 200 mm. The specific length of the crystal at the initial state of crystal pulling can be customized according to user needs, which is not described here in this example embodiment.

[0091] The crystal pulling parameter distribution can include the temperature distribution, the velocity distribution in the crystal pulling furnace, and the stress distribution in the crystal at the initial state of crystal pulling, etc.

[0092] Specifically, the initial steady-state calculation of the above initial state of crystal pulling can be performed using crystal simulation software. It should be noted that the thermal stress distribution can be calculated at the same time to exclude the influence of thermal stress on defects, and to further improve the accuracy of the obtained target crystal pulling parameters.

[0093] For example, referring to FIG. 5, Without Stress indicates that the influence of thermal stress on the concentration of point defects is not considered in the simulation process, and With Stress indicates that the influence of thermal stress is considered in the simulation. The consideration of thermal stress can change the distribution and concentration of point defects.

[0094] where Top and Tail represent two different regions in the crystal growth process, which can be the two ends of the crystal. The lattice interstitial radius Rv[nm] represents the volume or size of the interstitial site in the lattice, which is in units of nanometers (nm). As can be seen from FIG. 5, thermal stress can change the distribution and concentration of point defects. Therefore, in the determination of the parameter distribution, the thermal stress distribution is calculated in the example embodiment, so that the accuracy of the obtained target crystal pulling parameters is higher and more consistent with the actual experimental data.

[0095] In step S420, the defect distribution of the initial state of crystal pulling is simulated based on the parameter distribution.

[0096] In some example embodiments of the present disclosure, the defect distribution includes the point defect concentration of interstitial atoms and the vacancy point defect concentration. After obtaining the above parameter distribution, the steady-state initial crystal point defect distribution can be calculated based on the above parameter distribution. The specific calculation method can refer to related technologies, and will not be described in detail in the example embodiment.

[0097] In step S430, the defect distribution is corrected according to the correction coefficient, and the defect cluster of the initial state of crystal pulling is determined based on the corrected defect distribution.

[0098] In some examples of the present disclosure, the correction coefficient can be obtained based on historical data. Specifically, the correction coefficient can be determined according to the specific historical defect distribution and the actual defect distribution in the historical experiment, and the defect distribution is corrected based on the above correction coefficient.

[0099] where the above correction coefficient can include the correction coefficient of the point defect concentration of interstitial atoms and the correction coefficient of the vacancy point defect concentration. The specific value of the correction coefficient can be obtained according to a large amount of historical data, and the specific data will not be described in detail.

[0100] In some examples, it is assumed that the above correction coefficient includes the correction coefficient of the point defect concentration Ci of interstitial atoms, and the correction coefficient is approximately greater than or equal to 1.0 and less than or equal to 1.3. i In some embodiments, the correction coefficient can be 1.1. The point defect concentration Ci multiplied by the coefficient 1.1 can achieve a defect distribution result consistent with the experiment. The above point defect concentration of interstitial atoms can be corrected according to the above correction coefficient to obtain a more accurate defect distribution, and then a target crystal pulling parameter with higher accuracy is obtained.

[0101] Referring to FIG. 5, the point defect concentration of the adjusted interstitial atoms Ci adjusted indicates that the point defect concentration of the interstitial atoms is adjusted according to the comparison and analysis of the simulation results and the experimental data, and can more accurately reflect the physical phenomena in the actual crystal growth process.

[0102] After the above defect distribution is corrected, the defect cluster calculation of the crystal pulling initial state can be performed based on the above corrected defect distribution. Specifically, the defect cluster calculation function in the crystal simulation software can be used to simulate how point defects aggregate to form larger defect clusters. The specific calculation process can refer to related technologies, and will not be described here.

[0103] In step S440, the simulation defects in the crystal pulling process are determined according to the defect clusters of the crystal pulling initial state and the reference crystal pulling parameters.

[0104] In some example embodiments of the present disclosure, after the defect clusters of the above crystal pulling initial state are determined, the simulation defects in the crystal pulling process can be determined according to the defect clusters of the above crystal pulling initial state and the reference crystal pulling parameters.

[0105] Specifically, the defect clusters of the above crystal pulling initial state and the above reference crystal pulling parameters can be used as input parameters to obtain the simulation defects in the above crystal pulling process by using the above crystal simulation software CGSim.

[0106] After the above crystal pulling defects are obtained, the above reference crystal pulling parameters can be adjusted according to the above simulation defects until the above simulation defects meet the preset conditions.

[0107] In some examples, the above preset conditions can be COP(V-Cluster>25nm), Pv(V-Cluster=12-25nm), Pi(V-Cluster<12nm and I-Cluster<0.5nm), and LDP(I-Cluster<0.5nm).

[0108] Wherein, COP (Crystal Originated Particle) defects represent vacancy clusters, Pv defects refer to defect-free regions with a vacancy majority, Pi defects refer to interstitial atom majority defect-free regions, LDP defects refer to large dislocation pits caused by interstitial atoms, and I-Cluster (Interstitial Cluster) represents the size of interstitial clusters, and V-Cluster (Vacancy Cluster) represents the size of vacancy defects.

[0109] It should be noted that the above preset conditions are exemplary, and the specific form of the preset conditions can be set according to process requirements, which will not be described in detail in the present example embodiment.

[0110] Adjust the thermal field parameters and / or the crystal pulling process parameters in the above-mentioned reference crystal pulling parameters, and output the adjusted reference crystal pulling parameters as target crystal pulling parameters when the above-mentioned simulated defects meet the preset conditions, and use the target crystal pulling parameters as the crystal pulling parameters for producing the crystal bar. For example, the target crystal pulling parameters can include a maximum Gaussian plane position (MGP) greater than or equal to -200 mm and less than or equal to 150 mm, a magnetic intensity (MI) greater than or equal to 2500 G and less than or equal to 3800 G, a crystal rotation speed (S / R) greater than or equal to 8 rpm and less than or equal to 12 rpm, a crucible rotation speed greater than or equal to -0.2 rpm and less than or equal to 2.5 rpm, an argon gas flow rate (ArGFR) greater than or equal to 60 slm and less than or equal to 220 slm, and a furnace pressure (FP) greater than or equal to 20 Tor and less than or equal to 100 Tor.

[0111] It should be noted that the types and specific values of the target crystal pulling parameters are exemplary and can be customized according to user requirements, and details are not described herein.

[0112] The crystal pulling method for producing a large-diameter silicon single crystal provided by the embodiment of the present disclosure will be described below with reference to FIG. 6. The method can include the following steps:

[0113] In step S610, a global two-dimensional simulation is performed on the crystal pulling process to obtain a global temperature distribution, a velocity field distribution, and an initial solid-liquid interface value in the crystal pulling process under a preset crystal pulling device model and a preset crystal pulling parameter.

[0114] In step S620, a boundary condition is determined according to the global temperature distribution and the velocity field distribution, and a local three-dimensional simulation is performed on the crystal pulling process based on the boundary condition to determine a target solid-liquid interface value.

[0115] In step S630, the melt viscosity value and / or the thermal conductivity are adjusted.

[0116] In step S640, it is determined whether the initial solid-liquid interface value is equal to the target solid-liquid interface value.

[0117] If not, step S630 is performed, and if so, step S650 is performed to determine the parameter distribution at the initial state of the crystal pulling.

[0118] In step S660, a defect distribution at the initial state of the crystal pulling is determined based on the parameter distribution.

[0119] Step S670, correcting the defect distribution according to the correction coefficient, and determining the defect cluster of the crystal pulling initial state based on the corrected defect distribution.

[0120] Step S680, determining the simulated defect in the crystal pulling process according to the defect cluster of the crystal pulling initial state and the reference crystal pulling parameter.

[0121] Step S690, adjusting the thermal field parameter and the crystal pulling process parameter according to the simulated defect.

[0122] Step S611, determining whether the simulated defect meets the preset condition.

[0123] If not, step S690 is executed, and if yes, step S612 is executed to output the target crystal pulling parameter.

[0124] It should be noted that the specific details of steps S610 to S612 have been described in detail above, and thus will not be repeated here.

[0125] In some examples, FIG. 7 is a comparison diagram of a crystal growth variable pulling rate test defect simulation result and an experimental result according to an embodiment of the present disclosure. Referring to FIG. 7, from the comparison result, the crystal axial defect simulation result distribution is consistent with the experimental result, and the error between the simulation result and the actual pulling rate in the defect-free area is less than 1%.

[0126] FIG. 8 is a comparison diagram of a crystal growth constant pulling rate test defect simulation result and an experimental result according to an embodiment of the present disclosure. Referring to FIG. 8, from the comparison result, the crystal radial defect simulation result is consistent with the experimental result, and the consistency of the radial defect simulation result and the experimental result is more than 90%. As can be seen from FIG. 8, the simulation result of the 19nm local laser scattering (LLS) defect is also highly consistent with the experimental result.

[0127] Referring to FIGS. 7 and 8, it can be seen that the simulation result of the crystal pulling method for manufacturing a large-diameter silicon single crystal according to an embodiment of the present disclosure is highly consistent with the experimental result, and the accuracy of the target crystal pulling parameter obtained is also high.

[0128] In summary, the crystal pulling method for manufacturing large-diameter silicon single crystals provided by the embodiments of the present disclosure can, on the one hand, determine the target solid-liquid interface value by using three-dimensional simulation on the basis of two-dimensional simulation, and then adjust the preset crystal pulling parameters, so that the solid-liquid interface value in the two-dimensional simulation process is the same as the solid-liquid interface value in the three-dimensional simulation, thereby improving the simulation accuracy in the crystal pulling process. On the other hand, the boundary conditions of the three-dimensional simulation are determined according to the global temperature distribution obtained by the two-dimensional simulation, which can reduce the model size of the three-dimensional simulation, reduce the simulation parameters, and improve the simulation efficiency. On the other hand, the crystal pulling parameters are optimized according to the simulation defects in the simulation process, so that the target crystal pulling parameters obtained by the simulation can be directly used to produce defect-free wafers. Through simulation, a large number of trial and error can be avoided, and the experimental material and time cost can be significantly reduced. Further, the adjustment time in the production process can be reduced, and the production efficiency can be improved. Further, the defect distribution is adjusted by using the correction coefficient, so that the accuracy of the target crystal pulling parameters obtained according to the simulation defects is higher, and the quality of the crystal bar generated according to the target crystal pulling parameters is higher.

[0129] Further, the present disclosure also provides a crystal bar, which is obtained by the crystal pulling method for manufacturing large-diameter silicon single crystals according to the target crystal pulling parameters. In the crystal bar, the number of defects with a vacancy defect size of 19 nm in any wafer obtained in the crystal bar is less than or equal to 25. The specific process of the crystal pulling method for manufacturing large-diameter silicon single crystals has been described in detail above, and thus will not be described herein.

[0130] It should be noted that the specific value of the vacancy defect size of any wafer obtained in the crystal bar and the number of defects can also be set according to user requirements. For example, the number of defects with a vacancy defect size of 20 nm in the wafer can be less than or equal to 24, and the number of defects with a vacancy defect size of 35 nm in the wafer can be less than or equal to 12, which will not be described herein in this example.

[0131] Further, the present disclosure also provides a system for crystal pulling for manufacturing large-diameter silicon single crystals. Referring to FIG. 9, the system 900 for crystal pulling for manufacturing large-diameter silicon single crystals can include a parameter acquisition module 910, a first determination module 920, a first adjustment module 930, a second determination module 940, a second adjustment module 950, and a crystal manufacturing module 960. Wherein:

[0132] The parameter acquisition module 910 can perform global two-dimensional simulation on the crystal pulling process, and obtain the global temperature distribution, the velocity field distribution, and the initial solid-liquid interface value in the crystal pulling process under the preset crystal pulling device model and the preset crystal pulling parameters.

[0133] The first determination module 920 can be configured to determine a boundary condition according to the global temperature distribution and the velocity field distribution, and perform a local three-dimensional simulation of the crystal pulling process based on the boundary condition to determine a target solid-liquid interface value.

[0134] The first adjustment module 930 can be configured to adjust the preset crystal pulling parameter in the global two-dimensional simulation until the initial solid-liquid interface value is equal to the target solid-liquid interface value within a threshold range, and take the adjusted preset crystal pulling parameter as a reference crystal pulling parameter.

[0135] The second determination module 940 is configured to iteratively optimize the reference crystal pulling parameter according to the simulated defect until the simulated defect meets a preset condition, and take the optimized reference crystal pulling parameter as a target crystal pulling parameter.

[0136] The second adjustment module 950 can be configured to adjust the reference crystal pulling parameter according to the simulated defect until the simulated defect meets a preset condition, and take the adjusted reference crystal pulling parameter as a target crystal pulling parameter.

[0137] The crystal manufacturing module 960 can be configured to manufacture a defect-free silicon single crystal using the target crystal pulling parameter, the target crystal pulling parameter including a thermal field parameter and a crystal pulling process parameter.

[0138] In some examples, the first determination module 920 can be further configured to determine a simulation scenario according to the boundary, and add a simulation magnetic field to the simulation scenario to perform a three-dimensional simulation of the crystal pulling process; and determine the target solid-liquid interface value based on a thermal field parameter in the three-dimensional simulation process, a physical property parameter of the single crystal silicon, a turbulent flow model of the silicon melt, and a flow boundary layer.

[0139] In some examples, the threshold range is within 10%.

[0140] In some examples, the first adjustment module 930 can be further configured to determine a parameter distribution at a crystal pulling initial state; determine a defect distribution of the crystal pulling initial state based on the parameter distribution; correct the defect distribution according to a correction coefficient, and determine a defect cluster of the crystal pulling initial state based on the corrected defect distribution; and determine a simulated defect in the crystal pulling process according to the defect cluster of the crystal pulling initial state and the reference crystal pulling parameter. The parameter distribution includes a temperature distribution, a velocity distribution in the crystal pulling furnace, and a stress distribution in the crystal at the crystal pulling initial state.

[0141] In some examples, the first adjustment module 930 can be further configured to determine a correction coefficient according to historical data, and correct at least one of a point defect concentration and a vacancy point defect concentration of the interstitial atoms based on the correction coefficient.

[0142] In some examples, the correction factor is greater than or equal to 1.0 and less than or equal to 1.3 when correcting the point defect concentration for the interstitial atoms.

[0143] In some examples, the preset crystal growth parameters include a material viscosity value and a thermal conductivity of the melt, and the first adjustment module 930 can further adjust the material viscosity value and / or the thermal conductivity until the initial solid-liquid interface value is equal to the target solid-liquid interface value within a threshold range.

[0144] In some examples, the second determination module 940 can be further configured to adjust the thermal field parameters and / or the crystal growth process parameters until the simulated defects meet the preset conditions.

[0145] In some examples, the iteratively optimizing the reference crystal growth parameters according to the simulated defects until the simulated defects meet the preset conditions includes: when the simulated defects meet COP, P-band (V-Cluster > 25 nm), Pv (V-Cluster = 12-25 nm), Pi (V-Cluster < 12 nm and I-Cluster < 0.5 nm), and LDP (I-Cluster < 0.5 nm), taking the optimized reference crystal growth parameters as the target crystal growth parameters.

[0146] Referring to FIG. 10, a structural block diagram of an electronic device according to an example embodiment of the present disclosure is shown. In some examples, the electronic device can be at least one of a smart phone, a smart watch, a desktop computer, a laptop computer, a virtual reality terminal, an augmented reality terminal, a wireless terminal, and a laptop computer. The electronic device has a communication function and can access a wired network or a wireless network. The electronic device can refer to one of a plurality of terminals, and those skilled in the art can know that the number of terminals can be more or less. It can be understood that the electronic device undertakes the calculation and processing work of the technical solutions of the present disclosure, and the embodiments of the present disclosure do not limit this.

[0147] It should be understood that the above-mentioned device embodiments are only schematic, and the device of the present disclosure can also be implemented in other ways. For example, the division of units / modules in the above-mentioned embodiments is only a logical function division, and another division mode can be used in actual implementation. For example, a plurality of units / modules or components can be combined, or can be integrated into another system, or some features can be ignored or not executed.

[0148] In addition, unless specifically stated, each functional unit / module in each embodiment of the present disclosure can be integrated in one unit / module, or each unit / module can exist physically, or two or more units / modules can be integrated together. The integrated unit / module can be realized in the form of hardware or in the form of a software program module.

[0149] The integrated units / modules, if implemented in the form of hardware, can be digital circuits, analog circuits, etc. The physical implementation of the hardware structure includes, but is not limited to, transistors, memristors, etc. Unless otherwise specified, the processor can be any appropriate hardware processor, such as a central processing unit (CPU), a graphics processing unit (GPU), a field-programmable gate array (FPGA), a digital signal processor (DSP), an application specific integrated circuit (ASIC), etc. Unless otherwise specified, the storage unit can be any appropriate magnetic storage medium or magneto-optical storage medium, such as resistive random access memory (RRAM), dynamic random access memory (DRAM), static random access memory (SRAM), enhanced dynamic random access memory (EDRAM), high-bandwidth memory (HBM), hybrid memory cube (HMC), etc.

[0150] The integrated units / modules, if implemented in the form of software program modules and sold or used as independent products, can be stored in a computer-readable storage medium. Based on this understanding, the technical solutions of the present disclosure, essentially or in part, or all or part of the technical solutions, can be embodied in the form of a software product. The computer software product is stored in a storage medium, and includes a number of instructions that cause a computer device (which can be a personal computer, a server, or a network device, etc.) to execute all or part of the steps of the methods in the various embodiments of the present disclosure. The aforementioned storage medium includes: a U disk, a read-only memory (ROM), a random access memory (RAM), a mobile hard disk, a magnetic disk or an optical disk, and various other media that can store program codes.

[0151] As shown in FIG. 10, the electronic device 1000 can include at least one processor 1010, a memory 1020, and a communication interface 1030.

[0152] The memory 1020 is configured to store a program. Specifically, the program can include program codes including computer operation instructions.

[0153] The memory 1020 can include a high-speed RAM memory, and can also include a non-volatile memory such as at least one disk memory.

[0154] The processor 1010 is configured to execute the computer operation instructions stored in the memory 1020, so as to implement the crystal pulling method for manufacturing a large-diameter silicon single crystal described in the foregoing method embodiments. The processor 1010 can be a CPU, or an ASIC, or one or more integrated circuits configured to implement the embodiments of the present disclosure.

[0155] The electronic device 1000 can further include the communication interface 1030, so as to communicate with external devices through the communication interface 1030. In a specific implementation, if the communication interface 1030, the memory 1020 and the processor 1010 are independently implemented, the communication interface 1030, the memory 1020 and the processor 1010 can be connected with each other through a bus and complete communication therebetween. The bus can be an Industry Standard Architecture (ISA) bus, a Peripheral Component (PCI) bus or an Extended Industry Standard Architecture (EISA) bus, etc. The bus can be divided into an address bus, a data bus, a control bus, etc., but does not mean that there is only one bus or one type of bus.

[0156] Optionally, in a specific implementation, if the communication interface 1030, the memory 1020 and the processor 1010 are integrated on a chip, the communication interface 1030, the memory 1020 and the processor 1010 can complete communication through an internal interface.

[0157] The present disclosure further provides a computer readable storage medium, which can include a U disk, a mobile hard disk, a read-only memory random access memory, a magnetic disk or an optical disk, and various media that can store program codes, and specifically, the computer readable storage medium stores program instructions, and the program instructions are used for the crystal pulling method for manufacturing a large-diameter silicon single crystal in the foregoing embodiments.

[0158] The embodiment of the present disclosure further provides a computer program product, which comprises computer instructions stored in a computer readable storage medium; a processor of an electronic device reads the computer instructions from the computer readable storage medium, and the processor executes the computer instructions, so that the electronic device performs the crystal pulling method for manufacturing a large-diameter silicon single crystal to realize the various embodiments described above.

[0159] Those skilled in the art should be aware that, in one or more examples described above, the functions described in the embodiments of the present disclosure can be implemented in hardware, software, firmware or any combination thereof. When implemented in software, the functions can be stored in a computer readable medium or transmitted as one or more instructions or codes on a computer readable medium. The computer readable medium includes computer storage medium and communication medium, wherein the communication medium includes any medium that facilitates the transfer of computer program from one place to another. The storage medium can be any available medium accessible by a general or special purpose computer.

[0160] In the above embodiments, the description of each embodiment has its own focus, and the parts not described in detail in a certain embodiment can be referred to the relevant description of other embodiments. The technical features of the above embodiments can be combined arbitrarily, and in order to make the description concise, not all possible combinations of the technical features in the above embodiments are described, however, as long as the combinations of the technical features do not exist contradictory, it should be considered as the scope of the present disclosure.

[0161] Other embodiments of the present disclosure will be apparent to those skilled in the art from consideration of the specification and practice of the application disclosed here. The present disclosure is intended to cover any variations, uses or adaptations of the present disclosure following the general principles thereof and including the general and specific teachings of the present disclosure to the extent not disclosed in the prior art.

[0162] It should be understood that the present disclosure is not limited to the precise structures described and shown in the drawings, and various modifications and changes can be made without departing from the scope thereof. The scope of the present disclosure is only limited by the appended claims.

Claims

1. A method for manufacturing large-diameter silicon single crystals by crystal pulling, comprising: A global two-dimensional simulation of the crystal pulling process was performed to obtain the global temperature distribution, velocity field distribution, and initial solid-liquid interface value during the crystal pulling process under a preset crystal pulling device model and preset crystal pulling parameters. Boundary conditions are determined based on the global temperature distribution and the velocity field distribution, and a local three-dimensional simulation of the crystal pulling process is performed based on the boundary conditions to determine the target solid-liquid interface value. In the global two-dimensional simulation, the preset crystal pulling parameters are adjusted until the initial solid-liquid interface value and the target solid-liquid interface value are equal within the threshold range, and the adjusted preset crystal pulling parameters are used as reference crystal pulling parameters. Simulated defects during the crystal pulling process are calculated based on the reference crystal pulling parameters; The reference crystal pulling parameters are iteratively optimized based on the simulated defects until the simulated defects meet the preset conditions, and the optimized reference crystal pulling parameters are used as the target crystal pulling parameters. Defect-free silicon single crystals are manufactured using the target crystal pulling parameters, which include thermal field parameters and crystal pulling process parameters.

2. The method according to claim 1, wherein, The step of performing a local three-dimensional simulation of the crystal pulling process based on the boundary conditions to determine the target solid-liquid interface value includes: The simulation scene is determined based on the boundary, and a simulated magnetic field is added to the simulation scene to perform a three-dimensional simulation of the crystal pulling process; The target solid-liquid interface value is determined based on the thermal field parameters, physical properties of single-crystal silicon, turbulence model of silicon melt, and flow boundary layer during the three-dimensional simulation process.

3. The method according to claim 1, wherein, The step of adjusting the preset crystal pulling parameters until the initial solid-liquid interface value and the target solid-liquid interface value are equal within a threshold range includes a threshold range of less than 10%.

4. The method according to claim 1, wherein, The step of simulating and calculating the simulated defects in the crystal pulling process based on the preset crystal pulling parameters includes: Determine the distribution of crystal pulling parameters in the initial state of crystal pulling; The defect distribution in the initial state of crystal pulling is simulated based on the aforementioned crystal pulling parameter distribution; The defect distribution is corrected according to the correction coefficient, and the defect clusters in the initial state of crystal pulling are determined based on the corrected defect distribution; The simulated defects during the crystal pulling process are determined based on the defect clusters in the initial state of crystal pulling and the reference crystal pulling parameters.

5. The method according to claim 4, wherein, The defect distribution includes the point defect concentration of interstitial atoms and the vacancy site defect concentration; The step of correcting the defect distribution according to the correction coefficient includes: The correction coefficient is determined based on historical data, and at least one of the point defect concentration and vacancy defect concentration of the interstitial atom is corrected based on the correction coefficient.

6. The method according to claim 5, wherein, When correcting for the point defect concentration of the interstitial atoms, the correction factor is greater than or equal to 1.0 and less than or equal to 1.

3.

7. The method according to claim 1, wherein, The preset crystal pulling parameters include the material viscosity and thermal conductivity of the melt; The step of adjusting the preset crystal pulling parameters until the initial solid-liquid interface value and the target solid-liquid interface value are equal within a threshold range includes: Adjust the material viscosity and / or thermal conductivity until the initial solid-liquid interface value is equal to the target solid-liquid interface value within a threshold range.

8. The method according to claim 1, wherein, The step of iteratively optimizing the reference crystal pulling parameters based on the simulated defects until the simulated defects meet preset conditions includes the simulated defects meeting COP and P-band (V-Cluster > 25nm), Pv (V-Cluster = 12-25nm), Pi (V-Cluster < 12nm and I-Cluster < 0.5nm), LDP (I-Cluster < 0.5nm), and then using the optimized reference crystal pulling parameters as the target crystal pulling parameters.

9. A crystal pulling system for manufacturing large-diameter silicon single crystals, comprising: The parameter acquisition module is used to perform a global two-dimensional simulation of the crystal pulling process, and to acquire the global temperature distribution, velocity field distribution and initial solid-liquid interface value during the crystal pulling process under the preset crystal pulling device model and preset crystal pulling parameters. The first determining module is used to determine the boundary conditions based on the global temperature distribution and the velocity field distribution, and to perform a local three-dimensional simulation of the crystal pulling process based on the boundary conditions to determine the target solid-liquid interface value. The first adjustment module is used to adjust the preset crystal pulling parameters in a global two-dimensional simulation until the initial solid-liquid interface value and the target solid-liquid interface value are equal within a threshold range, and to use the adjusted preset crystal pulling parameters as reference crystal pulling parameters. The second determining module is used to simulate and calculate the simulated defects in the crystal pulling process based on the reference crystal pulling parameters; The second adjustment module is used to iteratively optimize the reference crystal pulling parameters according to the simulated defect until the simulated defect meets the preset conditions, and to use the optimized reference crystal pulling parameters as the target crystal pulling parameters. A crystal manufacturing module is used to manufacture defect-free silicon single crystals using the target crystal pulling parameters, which include thermal field parameters and crystal pulling process parameters.

10. A silicon single crystal, comprising: The silicon single crystal is manufactured based on the crystal pulling method for manufacturing large-diameter silicon single crystals as described in any one of claims 1 to 8; The number of defects with a vacancy size of 19 nm in any wafer obtained from the silicon single crystal is less than or equal to 25.

11. An electronic device, the electronic device comprising: Processor and memory; The processor is used to execute instructions stored in the memory to implement the crystal pulling method for manufacturing large-diameter silicon single crystals as described in any one of claims 1 to 8.

12. A computer storage medium storing at least one instruction for execution by a processor to implement the crystal pulling method for manufacturing large-diameter silicon single crystals as claimed in any one of claims 1 to 8.

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