Film deposition apparatus and laser machining apparatus

Abstract

A film deposition apparatus 2 comprises: a rotary table unit 20 including a placement part 20a, on which a wafer We is placed, and a rotary part 20b; a first treatment liquid discharge part 21 for discharging a first treatment liquid; a second treatment liquid discharge part 22 for discharging a second treatment liquid differing from the first treatment liquid; and a receiving member 23 including a first receiving part 24 which is capable of receiving the first treatment liquid that has flowed to the outer peripheral side of the placement part 20a, and a second receiving part 25 which is capable of receiving the second treatment liquid that has flowed to the outer peripheral side of the placement part 20a, the receiving member being disposed so as to surround the sides of the rotary table unit 20.

Description

Film forming equipment and laser processing equipment

[0001] The present invention relates to a film forming apparatus and a laser processing apparatus, and more particularly to a film forming apparatus and a laser processing apparatus that discharge a processing liquid while a wafer is being rotated.

[0002] 2. Description of the Related Art Conventionally, a film forming apparatus that discharges a processing liquid onto a rotating wafer is known, and is disclosed, for example, in Japanese Patent No. 6688695.

[0003] The above-mentioned Japanese Patent No. 6688695 discloses a film forming apparatus including a laser light irradiation unit that irradiates a wafer with laser light, and a protective film forming and cleaning unit that coats the wafer with a protective film and cleans the protective film coated on the wafer.

[0004] The protective film forming and cleaning unit disclosed in Japanese Patent No. 6688695 includes a spinner table, an electric motor, and a liquid receiving unit. The protective film forming and cleaning unit is configured to coat the wafer surface with a protective film by dropping a resin solution onto the wafer surface and rotating the spinner table. In Japanese Patent No. 6688695, the resin solution is a solution containing a resin material such as polyvinyl alcohol or polyethylene glycol dissolved therein. The protective film forming and cleaning unit is configured to clean the wafer by supplying cleaning water such as pure water to the wafer on which the protective film has been formed. The liquid receiving unit is configured to receive the liquid resin and cleaning water supplied onto the wafer when forming the protective film on the wafer. The liquid receiving unit is also provided with a drainage outlet through which the liquid resin and cleaning water are discharged.

[0005] Patent No. 6688695

[0006] The protective film forming and cleaning unit in Japanese Patent No. 6688695 is used for both forming a protective film and cleaning the wafer. Therefore, the laser processing apparatus of Japanese Patent No. 6688695 can simplify its configuration. However, the liquid receiving unit (receiving member) in Japanese Patent No. 6688695 receives both a resin solution (first processing liquid) containing a high concentration of organic matter, such as polyvinyl alcohol or polyethylene glycol, and a cleaning liquid (second processing liquid), such as pure water. Therefore, in the configuration disclosed in Japanese Patent No. 6688695, the first processing liquid and the second processing liquid are discharged through the same receiving member. This may result in mixing of the first processing liquid and the second processing liquid.

[0007] When the first and second treated liquids are mixed, it is undesirable to discharge the mixed liquid into the sewerage. Therefore, it is desired to simplify the device configuration and to separately discharge the first and second treated liquids, which are undesirable to be mixed and discharged.

[0008] The present invention has been made to solve the above-mentioned problems, and one object of the present invention is to provide a film forming apparatus and a laser processing apparatus that are capable of separately discharging a first processing liquid and a second processing liquid, which are not preferably mixed and discharged, while simplifying the apparatus configuration.

[0009] A film forming apparatus according to a first aspect of the present invention is a film forming apparatus that performs a coating process on a wafer as a pre-processing for the wafer to be laser-machined, and is equipped with a turntable unit including a mounting unit on which the wafer is placed when the coating process is performed on the wafer and a rotating unit that rotates the mounting unit, a first processing liquid discharge unit that discharges a first processing liquid onto the wafer placed on the mounting unit, a second processing liquid discharge unit that discharges a second processing liquid different from the first processing liquid onto the wafer placed on the mounting unit, and a receiving member that is arranged to surround the side of the turntable unit and includes a first receiving unit provided on the outer periphery of the turntable unit and capable of receiving the first processing liquid that has flowed to the outer periphery of the mounting unit, and a second receiving unit provided on the outer periphery of the turntable unit and capable of receiving the second processing liquid that has flowed to the outer periphery of the mounting unit.

[0010] As described above, a film forming apparatus according to a first aspect of the present invention includes a receiving member disposed to surround the sides of the turntable, the receiving member including a first receiving portion provided on the outer periphery of the turntable and capable of receiving a first processing liquid that has flowed to the outer periphery of the mounting portion, and a second receiving portion provided on the outer periphery of the turntable and capable of receiving a second processing liquid that has flowed to the outer periphery of the mounting portion. This allows the first and second receiving portions to separately receive the first and second processing liquids that have flowed to the outer periphery of the mounting portion in a configuration in which a single turntable is used to perform processes using the first and second processing liquids. Furthermore, by using a single turntable to perform both processes using the first and second processing liquids, the apparatus configuration can be simplified. As a result, the apparatus configuration can be simplified while the first and second processing liquids, which are undesirable to be mixed and discharged, can be separately discharged.

[0011] The film forming apparatus according to the first aspect preferably further includes a lifting mechanism capable of changing the relative position between the mounting unit and the receiving member in the vertical direction by moving either the turntable unit or the receiving member in the vertical direction, and a control unit for controlling the lifting mechanism, wherein the control unit is configured to control the lifting mechanism so that, when a process using a first processing liquid is performed, the relative position becomes a first relative position at which the first receiving unit can receive the first processing liquid, and to control the lifting mechanism so that, when a process using a second processing liquid is performed, the relative position becomes a second relative position at which the second receiving unit can receive the second processing liquid. With this configuration, the control unit controls the lifting mechanism so that the relative position becomes the first relative position when discharging the first processing liquid, and controls the lifting mechanism so that the relative position becomes the second relative position when discharging the second processing liquid, thereby making it possible to easily separate and discharge the first processing liquid and the second processing liquid. As a result, in a configuration in which processing using the first processing liquid and processing using the second processing liquid are performed using a single rotating table, the first processing liquid and the second processing liquid, which are not desirable to mix and discharge, can be easily separated and discharged.

[0012] In this case, preferably, the first processing liquid is a coating material for forming a coating on the wafer, and the second processing liquid is a cleaning liquid for cleaning the wafer, the first relative position is a position for forming a coating on the wafer, and the second relative position is a position for cleaning the wafer, and the control unit is configured to control the lifting mechanism to change the relative position to one of the first relative position, the second relative position, and a third relative position when loading the wafer onto the turntable and when removing the wafer from the turntable. With this configuration, in a configuration in which the single turntable is used for both coating the wafer and cleaning the wafer, the first processing liquid and the second processing liquid can be easily separated and discharged. Furthermore, because the relative position can be changed to the third relative position when loading the wafer onto the turntable and when removing the wafer from the turntable, loading and removing the wafer onto and from the turntable can be made easier than in a configuration in which the relative position is not changed to the third relative position.

[0013] In the film forming apparatus according to the first aspect, the first receiving portion preferably has a first outlet for discharging the first treatment liquid, and the bottom surface of the first receiving portion is inclined downward toward the first outlet. With this configuration, the bottom surface of the first receiving portion is inclined downward toward the first outlet, which facilitates the first treatment liquid to flow toward the first outlet. As a result, the first treatment liquid can be easily discharged from the first outlet. This prevents the first treatment liquid from remaining in the first receiving portion, thereby preventing volatile gases from being generated from the organic solvent contained in the first treatment liquid and stagnation inside the receiving member.

[0014] In this case, the first receiving section preferably has a first exhaust port located above the first outlet for exhausting gas generated from the first processing liquid upward. Here, for example, the gas generated from the first processing liquid may include volatile gases such as ethanol, acetonitrile, and toluene, and the volatile gas may fill the vicinity of the turntable. However, it is undesirable for the volatile gas to fill the vicinity of the turntable rotating at high speed. Furthermore, if the volatile gas fills the vicinity of the turntable, it may leak into the clean room where the film forming apparatus is located. Furthermore, if the film forming apparatus is installed together with a laser processing apparatus, the filled volatile gas may flow near the processing point of the laser processing apparatus. Furthermore, if the filled volatile gas fills the vicinity of the volatile gas, it may leak near electrical contacts such as relays and breakers. Therefore, with the above configuration, the gas generated from the first processing liquid can be exhausted from the first receiving section through the first exhaust port. Therefore, it is possible to prevent the gas generated from the first processing liquid from accumulating in the first receiving portion, and therefore to prevent the gas generated from the first processing liquid from filling the vicinity of the turntable. As a result, it is possible to prevent the volatile gas from leaking into the clean room, flowing near the processing point of the laser processing device, and leaking near the electrical contacts. Furthermore, because the first exhaust port is located above the first exhaust port, it is possible to prevent the first processing liquid from flowing into the first exhaust port, unlike in a configuration in which the first exhaust port is located near the first exhaust port.

[0015] In the film forming apparatus according to the first aspect, the second receiving portion preferably has a second outlet for discharging the second treatment liquid, and the bottom surface of the second receiving portion is inclined downward toward the second outlet. With this configuration, the bottom surface of the second receiving portion is inclined downward toward the second outlet, which facilitates the second treatment liquid to flow toward the second outlet. As a result, the second treatment liquid can be easily discharged from the second outlet. This prevents the second treatment liquid from remaining in the second receiving portion, thereby preventing water vapor from being generated from the second treatment liquid and stagnation inside the receiving member.

[0016] In this case, the second receiving section preferably has a second exhaust port located above the second exhaust port for exhausting gas generated from the first processing liquid upward. Here, gas generated from the first processing liquid may flow into the second receiving section and remain there. In this case, gas generated from the first processing liquid remaining in the second receiving section may fill the area near the rotary table. Even in this case, volatile gas may leak into the clean room, flow near the processing point of the laser processing device, or leak near electrical contacts. Therefore, with the above configuration, even if gas generated from the first processing liquid flows into the second receiving section, it can be exhausted through the second exhaust port. Therefore, it is possible to prevent gas generated from the first processing liquid from remaining in the second receiving section, thereby preventing gas generated from the first processing liquid from filling the area near the rotary table. As a result, it is possible to prevent volatile gas from leaking into the clean room, from flowing near the processing point of the laser processing device, and from leaking near the electrical contacts. Furthermore, since the second exhaust port is provided above the second exhaust port, it is possible to prevent the second processing liquid from flowing into the second exhaust port, unlike a configuration in which the second exhaust port is provided near the second exhaust port.

[0017] In the film forming apparatus according to the first aspect, the first receiving portion is preferably provided closer to the outer periphery of the receiving member than the second receiving portion. Here, by setting the rotation speed of the rotating portion when processing wafers with the first processing liquid to be faster than the rotation speed of the rotating portion when processing wafers with the second processing liquid, the first processing liquid can be scattered closer to the outer periphery of the receiving member than the second processing liquid. Therefore, with the above configuration, by setting the rotation speed of the rotating portion when processing wafers with the first processing liquid to be faster than the rotation speed of the rotating portion when processing wafers with the second processing liquid, the first receiving portion, which is provided closer to the outer periphery of the receiving member than the second receiving portion, can receive only the first processing liquid. As a result, the first processing liquid and the second processing liquid can be easily separated and discharged.

[0018] In the film forming apparatus according to the first aspect, the inner peripheral surface of the first receiving portion and the outer peripheral surface of the second receiving portion are preferably formed from a common plate-like member, and the plate-like member has a first protrusion protruding obliquely upward toward the center of the receiving portion. With this configuration, the second processing liquid that has splashed into the second receiving portion can be caused to fall downward by the first protrusion, thereby preventing the second processing liquid from flowing into the first receiving portion and mixing with the second processing liquid. Furthermore, because the inner peripheral surface of the first receiving portion and the outer peripheral surface of the second receiving portion are formed from a common plate-like member, an increase in the number of parts can be prevented compared to when the inner peripheral surface of the first receiving portion and the outer peripheral surface of the second receiving portion are formed from separate plate-like members.

[0019] In this case, preferably, the outer peripheral surface of the first receiving portion has a second protruding portion that protrudes diagonally upward toward the center of the receiving member, and the second protruding portion protrudes closer to the center of the receiving member than the first protruding portion and to a position higher than the first protruding portion. With this configuration, the first processing liquid that has splashed toward the outer peripheral side of the turntable portion can be caused to fall downward by the second protruding portion, and the first processing liquid that has fallen downward by the second protruding portion can be moved into the first receiving portion by the first protruding portion. As a result, it is possible to effectively prevent the first processing liquid from flowing into the second receiving portion and mixing with the second processing liquid.

[0020] In the film forming apparatus according to the first aspect, the receiving member preferably further has a first peripheral wall portion at the bottom surface of the receiving member, the first peripheral wall portion being disposed inwardly of the outer peripheral surface of the receiving member and surrounding the rotating portion, and the mounting portion has a second peripheral wall portion surrounding the first peripheral wall portion and being disposed more outer than the first peripheral wall portion. With this configuration, since the rotating portion is surrounded by the first peripheral wall portion and the second peripheral wall portion, it is possible to prevent gas generated from the second processing liquid and the first processing liquid from flowing into the vicinity of the rotating portion.

[0021] In the configuration including the lifting mechanism capable of changing the relative position, the lifting mechanism is preferably configured to be able to change the relative position by moving the receiving member in the vertical direction. With this configuration, the device configuration can be made less complicated than a configuration in which a turntable unit including a rotating unit is moved in the vertical direction.

[0022] In the configuration in which the control unit changes the relative position to any one of the first relative position, the second relative position, and the third relative position, the control unit preferably controls the lifting mechanism to set the first relative position and controls the second processing liquid discharge unit to discharge the cleaning liquid at the first relative position. With this configuration, even if dried resin with a coating material adhering thereto and not flowing adheres to the first receiving portion, it can be cleaned with the cleaning liquid. As a result, it is possible to prevent the resin from accumulating in the first receiving portion and interfering with the discharge of the coating material.

[0023] The film forming apparatus according to the first aspect preferably further includes a wafer storage unit for storing wafers, the wafer storage unit being located directly above the turntable and the receiving member. This configuration allows the wafer storage unit, the turntable, and the receiving member to be collectively positioned in the same direction relative to the laser processing apparatus. As a result, the apparatus can be kept small compared to a configuration in which the wafer storage unit is located to either the left or right of the turntable and the receiving member. Furthermore, the wafer storage unit, the turntable, and the receiving member can be collectively positioned in the same direction relative to the laser processing apparatus. Therefore, the surface of the wafer storage unit where a user inserts and removes a cassette containing wafers and the surface where maintenance and / or cleaning of the turntable are performed can be aligned in the same direction. This allows for easy maintenance of the wafer storage unit, the turntable, and the receiving member even when multiple laser processing apparatuses are aligned in the left-right direction. As a result, user convenience (usability) can be improved.

[0024] A laser processing apparatus according to a second aspect of the present invention includes a laser irradiation unit that processes a wafer by irradiating a laser toward an irradiation position, a turntable unit including a mounting unit on which a wafer is placed when a coating process is performed on the wafer to be laser processed and a rotation unit that rotates the mounting unit, a first processing liquid discharge unit that discharges a first processing liquid that is a coating material for forming a coating onto the wafer placed on the mounting unit, a second processing liquid discharge unit that discharges a second processing liquid that is a cleaning liquid for cleaning the wafer onto the wafer placed on the mounting unit, and a receiving member that is arranged to surround the sides of the turntable unit and includes a first receiving unit provided on the outer periphery of the turntable unit and capable of receiving the first processing liquid that has flowed to the outer periphery of the mounting unit, and a second receiving unit provided on the outer periphery of the turntable unit and capable of receiving the second processing liquid that has flowed to the outer periphery of the mounting unit.

[0025] As described above, the laser processing apparatus according to a second aspect of the present invention includes a receiving member disposed so as to surround the sides of the turntable, the receiving member including a first receiving portion provided on the outer periphery of the turntable and capable of receiving the first processing liquid that has flowed to the outer periphery of the mounting portion, and a second receiving portion provided on the outer periphery of the turntable and capable of receiving the second processing liquid that has flowed to the outer periphery of the mounting portion. This makes it possible to provide a film forming apparatus that can separately discharge the first processing liquid and the second processing liquid, which are not preferably discharged together, while simplifying the apparatus configuration, as with the laser processing apparatus according to the first aspect.

[0026] The laser processing apparatus according to the second aspect preferably further includes a lifting mechanism capable of changing the relative position between the mounting unit and the receiving member in the vertical direction by moving either the turntable unit or the receiving member in the vertical direction, and a control unit for controlling the lifting mechanism, wherein the control unit is configured to control the lifting mechanism so that, when a process using a first processing liquid is performed, the relative position is a first relative position at which the first receiving unit can receive the first processing liquid, and to control the lifting mechanism so that, when a process using a second processing liquid is performed, the relative position is a second relative position at which the second receiving unit can receive the second processing liquid. With this configuration, it is possible to provide a laser processing apparatus that, like the film forming apparatus according to the first aspect, performs processes using the first processing liquid and the second processing liquid using a single turntable unit, and that can easily separate and discharge the first processing liquid and the second processing liquid, which should not be discharged together.

[0027] According to the present invention, as described above, the first processing liquid and the second processing liquid, which should not be mixed and discharged, can be discharged separately while simplifying the device configuration.

[0028] FIG. 1 is a perspective view of a laser processing apparatus according to a first embodiment; FIG. 2 is a plan view of a wafer before laser processing in the laser processing apparatus according to the first embodiment; FIG. 3 is a block diagram showing the configuration of the laser processing apparatus according to the first embodiment; FIG. 4 is a schematic diagram showing the configuration of a turntable and a receiving member provided in the laser processing apparatus according to the first embodiment; FIG. 5 is a plan view of a mounting unit and a receiving member provided in the laser processing apparatus according to the first embodiment; FIG. 6 is a schematic diagram showing the configuration of an exhaust duct and an exhaust fan provided in the laser processing apparatus according to the first embodiment; FIG. 7 is a schematic diagram showing a first relative position between the turntable and the receiving member in the laser processing apparatus according to the first embodiment; FIG. 8 is a schematic diagram showing a second relative position between the turntable and the receiving member in the laser processing apparatus according to the first embodiment; FIG. 9 is a schematic diagram showing a third relative position between the turntable and the receiving member in the laser processing apparatus according to the first embodiment; 10 is a schematic diagram showing a second relative position between the rotary table and the receiving member in the laser processing apparatus according to the second embodiment. FIG. 11 is a schematic diagram showing a third relative position between the rotary table and the receiving member in the laser processing apparatus according to the second embodiment. FIG. 12 is a flowchart showing a process in which a control unit of the laser processing apparatus according to the second embodiment changes the relative position. FIG. 13 is a block diagram showing the configuration of a film forming apparatus according to a modified example.

[0029] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, specific embodiments of the present invention will be described with reference to the accompanying drawings.

[0030] The configuration of a laser processing apparatus 100 according to a first embodiment of the present invention will be described with reference to FIGS.

[0031] 1, the laser processing apparatus 100 is configured to perform ablation processing on the surface of the wafer We in order to divide the wafer We. The laser processing apparatus 100 is disposed in a clean room.

[0032] The laser processing apparatus 100 includes a dicing unit 1, a film forming and cleaning unit 2, a control unit 3 (see FIG. 3), a cassette unit 4, and a wafer transport unit 5. The film forming and cleaning unit 2 is an example of a "film forming apparatus" in the claims. The cassette unit 4 is an example of a "wafer storage unit" in the claims.

[0033] Here, the vertical direction is the Z direction, the upward direction is the Z1 direction, and the downward direction is the Z2 direction. The horizontal direction perpendicular to the Z direction is the X direction, one side of the X direction is the X1 direction, and the other side of the X direction is the X2 direction. The horizontal direction perpendicular to the X direction is the Y direction, one side of the Y direction is the Y1 direction, and the other side of the Y direction is the Y2 direction.

[0034] As shown in FIG. 1, the dicing section 1 includes a laser irradiation section 10, a Z-direction moving section 11, a Y-direction moving section 12, an X-direction moving section 13, and a wafer holding section .

[0035] (Laser Irradiation Unit) The laser irradiation unit 10 is configured to process the wafer We by irradiating a laser beam toward an irradiation position. The laser irradiation unit 10 is configured to ablate the wafer We, which has multiple semiconductor chips Ch (see FIG. 2 ), by irradiating the wafer We with a laser beam. Specifically, the laser irradiation unit 10 is configured to irradiate the wafer We with a laser beam along each of multiple streets Ws (see FIG. 2 ) on the wafer We while moving the wafer We relative to the laser irradiation unit 10 using the wafer holder 14. The laser irradiation unit 10 is attached to a Y-direction moving unit 12 via a Z-direction moving unit 11. The Z-direction moving unit 11 is configured to move the laser irradiation unit 10 in each of the Z1 and Z2 directions. The Z-direction moving unit 11 includes, for example, a linear conveyor module or a drive unit having a ball screw and a motor with an encoder. The Z-direction moving unit 11 is attached to the Y-direction moving unit 12. As a result, the Z-direction moving unit 11 is moved in the Y1 direction and the Y2 direction by the Y-direction moving unit 12 .

[0036] The Y-direction moving unit 12 is configured to move the laser irradiation unit 10 in each of the Y1 direction and the Y2 direction via the Z-direction moving unit 11. The Y-direction moving unit 12 has, for example, a linear conveyor module or a drive unit having a ball screw and a motor with an encoder.

[0037] The X-direction moving unit 13 is configured to move the wafer holder 14 in each of the X1 and X2 directions. The X-direction moving unit 13 includes, for example, a linear conveyor module or a drive unit having a ball screw and a motor with an encoder.

[0038] The wafer holding unit 14 is configured to hold the wafer We by suctioning the wafer We attached to the sheet member Wt (see FIG. 2). The wafer holding unit 14 is attached to the X-direction moving unit 13. This allows the wafer holding unit 14 to move in the X1 and X2 directions by the X-direction moving unit 13. The wafer holding unit 14 is configured to rotate about a rotation axis that runs vertically. As a result, the wafer holding unit 14 is configured to be rotatable and movable in each horizontal direction while holding the frame Wf by suction.

[0039] The cassette unit 4 is configured to accommodate a plurality of cassettes each containing a wafer ring structure W, each of which includes a wafer We attached to a sheet member Wt (see FIG. 2 ) and a frame Wf. The frame Wf is annular. The wafer We is disposed inside the annular frame Wf.

[0040] The cassette unit 4 includes a plurality of cassette placement units 40 , a Z-direction movement mechanism 41 , and a frame holding unit 42 .

[0041] The multiple cassette placement units 40 include one cassette placement unit (not shown) and another cassette placement unit (not shown). A cassette containing a plurality of unprocessed wafers We is placed on one cassette placement unit. The other cassette placement units are each placed on a cassette containing a plurality of processed wafers We. The Z-direction movement mechanism 41 is configured to move the frame holding unit 42 in the Z1 direction or the Z2 direction. The Z-direction movement mechanism 41 includes, for example, a linear conveyor module or a drive unit having a ball screw and an encoder-equipped motor. The frame holding unit 42 is configured to hold the frame Wf. That is, the cassette unit 4 moves the frame holding unit 42 in the Z1 direction using the Z-direction movement mechanism 41, and moves the cassette held on the cassette placement unit 40 to the frame holding unit 42 using the clamp hand unit 50 (described later). The frame holding unit 42 then holds the frame Wf. Thereafter, the frame holding portion 42 holding the frame Wf is moved in the Z2 direction by the Z direction movement mechanism 41, and the frame Wf is placed on the placement portion 20a (see Figure 3) of the film forming cleaning portion 2 described later by the clamp hand portion 50.

[0042] The wafer transport unit 5 is configured to transport the wafer ring structure W between the cassette unit 4 and the dicing unit 1. Specifically, the wafer transport unit 5 has a clamp hand unit 50, a Y-direction movement mechanism 51, a rail unit 52, a rail unit 53, a transfer head unit 54, a transfer head unit 55, a Z-direction movement mechanism 56, and a rail unit 57.

[0043] The clamp hand unit 50 is configured to clamp the frame Wf of the wafer ring structure W and remove it from the cassette unit 4 or store it in the cassette unit 4. The clamp hand unit 50 is also configured to place the wafer ring structure W on the turntable unit 20. The clamp hand unit 50 is moved in the Y1 direction and the Y2 direction by a Y-direction movement mechanism 51. The Y-direction movement mechanism 51 has, for example, a linear conveyor module or a drive unit having a ball screw and a motor with an encoder.

[0044] The clamp hand unit 50 transports the wafer ring structure W removed from the cassette unit 4 to the rail unit 52 using the Y-direction movement mechanism 51. The clamp hand unit 50 transports the wafer ring structure W removed from the cassette unit 4 to the rail unit 53 using the Y-direction movement mechanism 51. The clamp hand unit 50 stores the processed wafer ring structure W placed on the rail unit 53 into the cassette unit 4 using the Y-direction movement mechanism 51.

[0045] Rail portion 52 is configured to support, from the Z2 direction, the wafer ring structure W placed by clamp hand portion 50. Rail portion 53 is configured to support, from the Z2 direction, the wafer ring structure W placed by clamp hand portion 50. Rail portion 52 and rail portion 53 are arranged side by side in this order from the Y2 direction side toward the Y1 direction side.

[0046] Each of the transfer and placement head units 54 and 55 is configured to adsorb the frame Wf of the wafer ring structure W. Each of the transfer and placement head units 54 and 55 is provided with an adsorption unit having suction holes or the like for adsorbing the frame Wf of the wafer ring structure W. The Z-direction movement mechanism 56 is configured to independently move each of the transfer and placement head units 54 and 55 in the Z1 direction or the Z2 direction. The Z-direction movement mechanism 56 has, for example, a linear conveyor module or a drive unit having a ball screw and a motor with an encoder.

[0047] As shown in FIG. 1, the cassette unit 4 is disposed directly above the rotary table unit 20 and the receiving member 23 .

[0048] Furthermore, the clamp hand unit 50 transports the wafer ring structure W placed on the rail unit 52 to the rail unit 57 by the Y-direction movement mechanism 51 .

[0049] The rail portions 57 are configured to support the wafer ring structure W placed by the clamp hand unit 50 from the Z2 direction. The wafer ring structure W placed on the rail portions 57 is placed on the placement portion 20a (see FIG. 3) of the turntable unit 20. The wafer ring structure W placed on the rail portions 57 is placed on the placement portion 20a, for example, by moving the rail portions 57 by a drive unit (not shown) with the placement portion 20a positioned below the rail portions 57. The wafer ring structure W placed on the rail portions 57 is placed on the placement portion 20a by moving the placement portion 20a by a movement mechanism (not shown) capable of moving the placement portion 20a in the up and down direction with the placement portion 20a positioned below the rail portions 57. After the wafer ring structure W is placed on the placement portion 20a, the rail portions 57 are retracted to a position where they do not interfere with the receiving member 23 (described later).

[0050] 3, the control unit 3 is configured to control each of the dicing unit 1, the film forming and cleaning unit 2, the cassette unit 4, and the wafer transport unit 5 in order to process the wafer We in the laser processing apparatus 100. The control unit 3 is also configured to control the lifting mechanism 26. The control unit 3 is electrically connected to each of the dicing unit 1, the film forming and cleaning unit 2, the cassette unit 4, and the wafer transport unit 5.

[0051] Specifically, the control unit 3 includes a CPU (Central Processing Unit), a storage unit having an HDD (Hard Disk Drive) etc., and a memory having a ROM (Read Only Memory) and a RAM (Random Access Memory) etc. The storage unit stores a control program for the laser processing apparatus 100, including the processing of the wafer We with a laser.

[0052] 3, the film forming and cleaning unit 2 includes a turntable unit 20, a first processing liquid discharge unit 21, a second processing liquid discharge unit 22, a receiving member 23, a lifting mechanism 26, and a warm air blower unit 27. The film forming and cleaning unit 2 is a film forming apparatus that performs a film coating process on the wafer We as a pretreatment for the wafer We to be laser processed.

[0053] The turntable unit 20 includes a mounting portion 20a and a rotating portion 20b. The detailed configuration of the turntable unit 20 will be described later.

[0054] The first processing liquid discharge part 21 is configured to discharge the first processing liquid onto the wafer We (see FIG. 2) placed on the mounting part 20 a. The first processing liquid discharge part 21 includes, for example, a nozzle, a pump, and a reservoir for storing the first processing liquid.

[0055] In the first embodiment, the first processing liquid is a coating material for forming a coating on the wafer We. The coating material is, for example, a highly concentrated organic solution in which a resin material is dissolved in an organic solvent such as ethanol, acetonitrile, or toluene.

[0056] The second processing liquid discharger 22 is configured to discharge a second processing liquid, which is different from the first processing liquid, onto the wafer We placed on the mounting part 20 a. The second processing liquid discharger 22 includes, for example, a nozzle, a pump, and a reservoir for storing the second processing liquid.

[0057] In the first embodiment, the second processing liquid is a cleaning liquid for cleaning the wafer We. The cleaning liquid is, for example, pure water.

[0058] The receiving member 23 includes a first receiving portion 24 and a second receiving portion 25. The receiving member 23 is a metal member, such as stainless steel whose surface (inner surface) is coated with a fluororesin such as Teflon (registered trademark).

[0059] The first receiving portion 24 is configured to be able to receive the first treatment liquid, and the second receiving portion 25 is configured to be able to receive the second treatment liquid. The detailed configurations of the receiving member 23, the first receiving portion 24, and the second receiving portion 25 will be described later.

[0060] The lifting mechanism 26 is configured to be able to change the relative position in the vertical direction between the mounting portion 20a and the receiving member 23 by moving either the turntable portion 20 or the receiving member 23 in the vertical direction. The detailed configuration of the lifting mechanism 26 will be described later.

[0061] The hot air blowing unit 27 is configured to be able to blow hot air in order to dry a coating material applied to the surface of the wafer We and to dry the surface of the wafer We after cleaning. The hot air blowing unit 27 includes, for example, a fan, a driving unit that drives the fan, and a heating unit that heats the air (clean air).

[0062] (Rotary Table Unit, Receiving Member, and Elevating Mechanism) Next, the configurations of the rotary table unit 20, receiving member 23, and elevating mechanism 26 will be described with reference to Figures 4 and 5. Figure 4 is a cross-sectional view showing a cross section of the rotary table unit 20, receiving member 23, and elevating mechanism 26 taken along the X direction.

[0063] The turntable unit 20 has a mounting portion 20a, a rotating portion 20b, and a holding portion 20c (see FIG. 5).

[0064] The wafer We is placed on the placement part 20a when work is performed on the wafer We. Specifically, the wafer We is placed on the placement part 20a when a coating process is performed on the wafer We to be laser processed. The placement part 20a includes a wafer placement part 120 on which the wafer We is placed. The surface of the wafer placement part 120 facing the Z1 direction is a placement surface 120a on which the wafer We is placed.

[0065] The rotating part 20b rotates the placement part 20a and includes a wafer placement part holder 121 that holds the wafer placement part 120, a driving part 122, a driving force transmission member 123, and a rotating shaft part .

[0066] The rotating unit 20b transmits the driving force generated by the driving unit 122 to the rotating shaft 124 via the driving force transmission member 123, causing the rotating shaft 124 to rotate. The rotating shaft 124 is connected to the wafer placement portion holder 121 and rotates together with the wafer placement portion holder 121. The rotation of the rotating shaft 124 together with the wafer placement portion holder 121 causes the wafer placement portion 120 held by the wafer placement portion holder 121 to rotate. The driving unit 122 is, for example, a motor. The driving force transmission member 123 is, for example, a belt member. The rotating shaft 124 is a cylindrical metal member.

[0067] In the first embodiment, the receiving member 23 is disposed so as to surround the side of the turntable portion 20 .

[0068] In the first embodiment, the control unit 3 (see FIG. 3) forms a coating on the surface of the wafer We by controlling the first processing liquid discharge unit 21 (see FIG. 3) and the turntable unit 20. The control unit 3 also cleans the surface of the wafer We by controlling the second processing liquid discharge unit 22 (see FIG. 3) and the turntable unit 20.

[0069] When forming a coating on the surface of the wafer We, a first processing liquid (coating material) is dropped onto the center position C of the wafer We, and the turntable 20 is rotated at a predetermined rotation speed. Because the amount of coating material dropped is small, the coating material rotates along with the wafer We. The coating material rotating along with the wafer We is applied to the surface of the wafer We by centrifugal force. During this process, excess coating material, which contains an organic solvent such as ethanol, acetonitrile, or toluene, flows toward the outer periphery of the mounting portion 20a. The excess coating material then scatters from the mounting portion 20a. When cleaning the surface of the wafer We, a cleaning liquid is ejected onto the surface of the wafer We while the turntable 20 is rotating. When cleaning the surface of the wafer We, a large amount of cleaning liquid is ejected to wash away the coating material remaining on the surface of the wafer We. Therefore, the thickness of the layer of cleaning liquid is greater than the thickness of the layer of coating material dropped onto the surface of the wafer We. In the region of the cleaning liquid layer near the mounting portion 20a of the turntable 20, the rotational force from the mounting portion 20a is transmitted to the cleaning liquid, but the rotational force from the mounting portion 20a is not transmitted to most of the cleaning liquid layer. That is, the rotational force from the mounting portion 20a is not enough to rotate the entire layer of cleaning liquid discharged onto the mounting portion 20a, and the cleaning liquid flows toward the outer periphery of the mounting portion 20a. The cleaning liquid then flows (falls) downward (in the Z2 direction) from the mounting portion 20a. Even if the rotation speed of the mounting portion 20a is high, the entire layer of cleaning liquid discharged onto the mounting portion 20a cannot be rotated. As a result, the cleaning liquid flows (falls) downward (in the Z2 direction) from the mounting portion 20a. When drying the surface of the wafer We after cleaning, the cleaning liquid remaining on the surface of the wafer We scatters outside the mounting portion 20a as the mounting portion 20a rotates.

[0070] Because the coating material contains organic solvents such as ethanol, acetonitrile, and toluene, it is undesirable to directly discharge the coating material into the sewer. Therefore, in the first embodiment, the first processing liquid is stored in a reservoir (not shown), such as a tank, connected to the receiving member 23. On the other hand, when cleaning the wafer We with the second processing liquid (cleaning liquid), the organic solvent contained in the coating material volatilizes, allowing the cleaning liquid to be discharged into the sewer. However, if the first processing liquid (coating material) and the second processing liquid (cleaning liquid) are mixed, it is undesirable to discharge the mixture into the sewer. Therefore, when the first processing liquid and the second processing liquid are mixed, the mixed processing liquid must be stored in a reservoir, similar to the first processing liquid. In this case, compared to a configuration in which only the first processing liquid is stored in the reservoir, the amount of processing liquid discharged into the reservoir increases due to the second processing liquid being mixed. Therefore, it is desirable to discharge the first processing liquid and the second processing liquid separately.

[0071] Therefore, in the first embodiment, the receiving member 23 includes a first receiving portion 24 capable of receiving the first processing liquid and a second receiving portion 25 capable of receiving the second processing liquid.

[0072] The first receiving portion 24 is provided on the outer periphery of the turntable 20 and is configured to receive the first processing liquid that has flowed to the outer periphery of the mounting portion 20a. As shown in FIG. 4 , the first receiving portion 24 is provided closer to the outer periphery of the receiving member 23 than the second receiving portion 25. The first receiving portion 24 has a first outlet 24a for discharging the first processing liquid. The first outlet 24a is connected to a storage portion (not shown), such as a tank, that stores the first processing liquid. In the first embodiment, the bottom surface 24b of the first receiving portion 24 is inclined downward toward the first outlet 24a. In other words, the bottom surface 24b of the first receiving portion 24 is inclined downward from the center of the receiving member 23 toward the outer periphery.

[0073] The first treatment liquid is discharged from the first discharge port 24 a as indicated by an arrow 90 .

[0074] Furthermore, the first processing liquid (coating material) contains a volatile organic solvent such as ethanol, acetonitrile, or toluene. Therefore, gas may be generated from the first processing liquid when forming a coating on the wafer We. Therefore, in the first embodiment, the receiving member 23 is provided with an exhaust port 28 to exhaust the gas generated from the first processing liquid. Specifically, the first receiving portion 24 is provided with a first exhaust port 28a at a position above the first exhaust port 24a, for exhausting the gas generated from the first processing liquid upward. The first exhaust port 24a and the first exhaust port 28a are provided at equal positions in the circumferential direction of the receiving member 23.

[0075] The gas generated from the first processing liquid is exhausted from the first exhaust port 28 a as shown by arrow 91 .

[0076] The second receiving portion 25 is provided on the outer periphery of the turntable 20 and is configured to receive the second treatment liquid that has flowed to the outer periphery of the mounting portion 20a. The second receiving portion 25 has a second outlet 25a for discharging the second treatment liquid. The second outlet 25a is connected to the sewer so that the second treatment liquid can be discharged into the sewer. In the first embodiment, the bottom surface 25b of the second receiving portion 25 is inclined downward toward the second outlet 25a. In other words, the bottom surface 25b of the second receiving portion 25 is inclined downward from the center of the receiving member 23 toward the outer periphery.

[0077] The second treatment liquid is discharged from the second discharge port 25 a as indicated by an arrow 92 .

[0078] Furthermore, there is a possibility that the gas generated from the first processing liquid may also flow into the second receiving part 25. Therefore, in the first embodiment, the second receiving part 25 is provided with a second exhaust port 28b at a position above the second exhaust port 25a, for exhausting the gas generated from the first processing liquid upward. The second exhaust port 25a and the second exhaust port 28b are provided at positions equal to each other in the circumferential direction of the receiving member 23.

[0079] The gas generated from the first processing liquid and flowing into the second receiving portion 25 is exhausted from the second exhaust port 28b as shown by the arrow 93.

[0080] In the example shown in Figure 4, the receiving member 23 is shown as being divided into multiple members at the positions of the first discharge outlet 24a, the second discharge outlet 25a, etc., but the receiving member 23 is actually a single member.

[0081] 4 , in the first embodiment, the inner peripheral surface 24c of the first receiving portion 24 and the outer peripheral surface 25c of the second receiving portion 25 are formed of a common plate-shaped member 29. The plate-shaped member 29 has a first protruding portion 29a that protrudes obliquely upward toward the center of the receiving member 23.

[0082] Furthermore, the outer peripheral surface 24d of the first receiving portion 24 has a second protrusion 24e that protrudes obliquely upward toward the center of the receiving member 23. The second protrusion 24e is closer to the center of the receiving member 23 than the first protrusion 29a and protrudes to a position higher than the first protrusion 29a. Here, because circuits and / or bumps (solder bumps) are provided on the surface of the wafer We, the coating material dispensed onto the surface of the wafer We may scatter obliquely upward as the mounting portion 20a rotates. In this case, to prevent the coating material from scattering outside the receiving member 23, it is preferable to narrow the opening 60a of the space 60 between the first protrusion 29a and the second protrusion 24e. By narrowing the opening portion 60a, sufficient exhaust flow rate from the first exhaust port 28a can be ensured, and the coating material that would otherwise be scattered outside the receiving member 23 due to the wind speed during exhaust can be pulled back, and any material that is about to scatter outside the receiving member 23 can be blocked.

[0083] 4, the receiving member 23 has a first peripheral wall portion 30. The first peripheral wall portion 30 is disposed on the bottom surface 23a of the receiving member 23, inward of the outer peripheral surface 23b of the receiving member 23, and is configured to surround the rotating portion 20b. The first peripheral wall portion 30 is configured of a cylindrical member.

[0084] Furthermore, when the mounting part 20a rotates due to the rotation of the rotating part 20b, the rotation of the mounting part 20a causes disturbances in the air currents and the like, which may cause volatile gases generated from the coating material to leak out from the opening 23c of the receiving member 23. For this reason, it is preferable to make the opening 23c of the receiving member 23 narrow.

[0085] 4, the mounting portion 20a has a second peripheral wall portion 31. The second peripheral wall portion 31 surrounds the first peripheral wall portion 30 and is located on the outer periphery side of the first peripheral wall portion 30. The second peripheral wall portion 31 is formed of a cylindrical member. The second peripheral wall portion 31 rotates together with the mounting portion 20a on the outer periphery side of the first peripheral wall portion 30. The second peripheral wall portion 31 may be provided on a frame or the like of the turntable portion 20 that does not rotate together with the mounting portion 20a.

[0086] In the first embodiment, the air pressure in the space formed by the first circumferential wall portion 30 and the second circumferential wall portion 31 is configured to be higher than the air pressure inside the receiving member 23. This makes it possible to prevent the second processing liquid and gas generated from the first processing liquid from flowing inside the first circumferential wall portion 30 and the second circumferential wall portion 31.

[0087] The lifting mechanism 26 is configured to be able to change the relative position by moving the receiving member 23 in the up and down direction. The lifting mechanism 26 is a linear motion mechanism that is movable in the Z direction. The lifting mechanism 26 includes a ball screw mechanism, a cylinder mechanism, or the like.

[0088] The lifting mechanism 26 also includes a receiving member holding portion 26a. The receiving member holding portion 26a is configured to hold an end portion 30a of the first circumferential wall portion 30 on the Z1 direction side.

[0089] The lifting mechanism 26 moves the receiving member holding portion 26a in the Z direction, thereby moving the receiving member 23 in the Z direction via the end portion 30a of the first circumferential wall portion 30 on the Z1 direction side.

[0090] As shown in Fig. 5, the holder 20c holds the wafer We (see Fig. 4) on the mounting part 20a by holding the wafer ring structure W. The holders 20c are provided at multiple locations on the mounting surface 120a of the mounting part 20a. In the example shown in Fig. 5, a total of four holders 20c are provided at four locations on the mounting surface 120a.

[0091] 5, the exhaust ports 28 are provided at multiple locations on the receiving member 23. Specifically, the exhaust ports 28, each consisting of one first exhaust port 28a and one second exhaust port 28b, are provided at four locations on the receiving member 23 at equal intervals. In other words, the sets of first exhaust ports 28a and second exhaust ports 28b are provided at 90-degree intervals at positions 45 degrees, 135 degrees, 225 degrees, and 315 degrees in the circumferential direction with respect to the Y1 direction of the receiving member 23.

[0092] In addition, in the first embodiment, the control unit 3 (see Figure 3) is configured to be able to move the first treatment liquid discharge unit 21, the second treatment liquid discharge unit 22, and the hot air blower unit 27 back and forth within a predetermined range.

[0093] Specifically, the control unit 3 is configured to be able to move the first processing liquid discharge unit 21 back and forth within an area 80 indicated by a dashed line, as indicated by an arrow 94 .

[0094] Furthermore, the control unit 3 is configured to be able to move the second processing liquid discharge unit 22 back and forth within an area 81 indicated by a broken line, as indicated by an arrow 95 .

[0095] The control unit 3 is also configured to be able to move the hot air blower 27 back and forth within the area 82 indicated by the dashed line, as indicated by an arrow 96 .

[0096] The gas exhausted from the exhaust ports 28 (first exhaust port 28a and second exhaust port 28b) is generated from the first processing liquid containing an organic solvent such as ethanol, acetonitrile, or toluene. It is not desirable to exhaust such gas around the rotating table 20 or other components that move at high speed in the film-forming and cleaning unit 2. Furthermore, if the film-forming and cleaning unit 2 is filled with volatile gas, it may leak into the clean room in which the film-forming and cleaning unit 2 is located. Furthermore, if the film-forming and cleaning unit 2 is located together with the laser processing device 100, as in the first embodiment, the filled volatile gas may flow near the processing point of the laser processing device 100. Furthermore, if the film-forming and cleaning unit 2 is filled with volatile gas, the filled volatile gas may leak near electrical contacts such as relays and breakers.

[0097] Therefore, in the first embodiment, as shown in FIG. 6, the film forming and cleaning unit 2 (see FIG. 3) has a duct 6 and an exhaust fan 7 for exhausting the gas generated from the first processing liquid to the outside.

[0098] In the first embodiment, the duct 6 includes a first duct 6a to a fourth duct 6d. Each of the first duct 6a to the fourth duct 6d has a cylindrical shape.

[0099] The exhaust fans 7 include a first exhaust fan 7a to a fourth exhaust fan 7d.

[0100] The first ducts 6a to the fourth ducts 6d are stacked in the Z direction. Each of the first ducts 6a to the fourth ducts 6d is connected to a corresponding one of the exhaust ports 28 (a set of the first exhaust port 28a (see FIG. 5) and the second exhaust port 28b (see FIG. 5)) provided in the receiving member 23. That is, the first duct 6a is connected to one of the four exhaust ports 28. The second duct 6b is connected to the exhaust port 28 that is not connected to the first duct 6a. The third duct 6c is connected to the exhaust port 28 that is not connected to the first duct 6a and the second duct 6b. The fourth duct 6d is connected to the exhaust port 28 that is not connected to the first duct 6a, the second duct 6b, and the third duct 6c.

[0101] The first duct 6a is connected to the first exhaust fan 7a via a first connecting duct 6e. The second duct 6b is connected to the second exhaust fan 7b via a second connecting duct 6f. The third duct 6c is connected to the third exhaust fan 7c via a third connecting duct 6g. The fourth duct 6d is connected to the fourth exhaust fan 7d via a fourth connecting duct 6h.

[0102] The gas generated from the first processing liquid is exhausted by the first exhaust fan 7a to the fourth exhaust fan 7d through four exhaust ports 28 (four sets of one first exhaust port 28a and one second exhaust port 28b), the first duct 6a to the fourth duct 6d, and the first connecting duct 6e to the fourth connecting duct 6h to the outside of the facility (factory) where the laser processing apparatus 100 is installed, and through an external exhaust port connecting the facility (factory) to the outside.

[0103] (First relative position to third relative position) Next, referring to Figures 7 to 9, we will explain the configuration in which the control unit 3 (see Figure 3) controls the lifting mechanism 26 to switch the relative position between the rotating table unit 20 and the receiving member 23 to the first relative position P1, the second relative position P2, and the third relative position P3.

[0104] (First Relative Position) First, the first relative position P1 will be described with reference to FIG.

[0105] The first relative position P1 is a position where a coating is formed on the wafer We. The first relative position P1 is a relative position where the mounting portion 20a (mounting surface 120a) is located between the first protrusion 29a and the second protrusion 24e in the Z direction. For simplicity, in FIG. 7, a dashed line 97 is shown indicating the position of the mounting surface 120a in the Z direction.

[0106] When a coating is formed on the surface of the wafer We at the first relative position P1, the first processing liquid (coating material) is scattered in the direction indicated by the arrow 90a as the turntable 20 rotates.

[0107] The coating material scattered in the direction indicated by arrow 90a hits the inside of second protrusion 24e and flows diagonally downward as indicated by arrow 90b. At this time, the coating material flowing downward (in the Z2 direction) is guided by the outside of first protrusion 29a so as to flow into the interior of first receiving portion 24. Thereafter, the coating material flows downward (in the Z2 direction) inside first receiving portion 24 as indicated by arrow 90c. The coating material is then discharged from first discharge port 24a as indicated by arrow 90d.

[0108] Furthermore, gas generated from the first processing liquid flows into the inside of first receiving part 24, as indicated by arrows 90a to 90c. First exhaust port 28a provided in first receiving part 24 is connected to exhaust fan 7 (see FIG. 6). Therefore, gas generated from the first processing liquid and flowing into first receiving part 24 is exhausted via first exhaust port 28a, as indicated by arrows 91a and 91b.

[0109] In addition, second receiving portion 25 communicates with first receiving portion 24. Therefore, as shown by arrow 93a, gas generated from the first processing liquid may also flow into second receiving portion 25. Since second exhaust port 28b provided in second receiving portion 25 is connected to exhaust fan 7, gas generated from the first processing liquid and flowing into second receiving portion 25 is exhausted via second exhaust port 28b as shown by arrows 93b and 93c.

[0110] In the example shown in Fig. 7, arrows 90a to 90d are shown for the first receiving portion 24 on the X1 direction side to indicate the discharge flow of the first processing liquid, but the first processing liquid is similarly discharged from first receiving portions 24 provided at other positions. In the example shown in Fig. 7, arrows 90a to 90c and arrows 91a and 91b are shown for the first receiving portion 24 on the X1 direction side to indicate the exhaust flow of gas generated from the first processing liquid, but the gas generated from the first processing liquid is similarly exhausted from first receiving portions 24 provided at other positions. In the example shown in Fig. 7, arrows 93a and 93b are shown for the second receiving portion 25 on the X2 direction side to indicate the exhaust flow of gas generated from the first processing liquid, but the gas generated from the first processing liquid is similarly exhausted from second receiving portions 25 provided at other positions.

[0111] Here, the coating material may adhere to the inner circumferential surface 24c of the first receiving portion 24 and dry. In this case, the coating material (resin) that has adhered to and dried on the first receiving portion 24 may make it difficult to discharge the coating material from the first discharge port 24a. Therefore, in the first embodiment, the control unit 3 controls the lifting mechanism 26 to the first relative position P1 and controls the second processing liquid discharge unit 22 to discharge the cleaning liquid at the first relative position P1. At this time, the control unit 3 rotates the rotating unit 20b at a speed faster than when the second processing liquid discharge unit 22 discharges the cleaning liquid at the second relative position P2 (see FIG. 8 ). In other words, the control unit 3 rotates the rotating unit 20b at a speed that causes the cleaning liquid to splash into the first receiving portion 24. Note that the coating material (resin) that has adhered to and dried on the first receiving portion 24 contains almost no ethanol, acetonitrile, toluene, or the like. Therefore, when the cleaning liquid is discharged from the second treatment liquid discharge part 22 at the first relative position P1, the first discharge port 24a only needs to be connected to the sewer.

[0112] (Second Relative Position) Next, the second relative position P2 will be described with reference to FIG.

[0113] The second relative position P2 is a position where the wafer We is cleaned. The second relative position P2 is a relative position where the mounting portion 20a (mounting surface 120a) is located lower (in the Z2 direction) than the first protrusion 29a in the Z direction. For simplicity, in FIG. 8 , a dashed line 98 is shown indicating the position of the mounting surface 120a in the Z direction.

[0114] When the surface of the wafer We is cleaned at the second relative position P2, the second processing liquid (cleaning liquid) is scattered in the direction indicated by the arrow 92a as the turntable 20 rotates.

[0115] The cleaning liquid splashed in the direction indicated by the arrow 92a hits the inside of the first protrusion 29a and flows downward (in the Z2 direction) as indicated by the arrow 92b, and then flows along the bottom surface 25b of the second receiving portion 25 as indicated by the arrow 92c, and is discharged from the second discharge port 25a.

[0116] Furthermore, when cleaning the wafer We, the cleaning liquid may not scatter in the direction indicated by the arrow 93a but may flow from the mounting portion 20a into the inside of the second receiving portion 25. In this case as well, the cleaning liquid that has flowed into the inside of the second receiving portion 25 flows along the bottom surface 25b of the second receiving portion 25 and is discharged from the second discharge port 25a.

[0117] In the example shown in Figure 8, arrows 92a to 92c are shown for the second receiving portion 25 on the X2 direction side to indicate the flow of discharge of the second processing liquid, but the second processing liquid is also discharged in the same way from second receiving portions 25 provided in other positions.

[0118] Furthermore, when the wafer We is cleaned with the second processing liquid, water vapor may be generated. When water vapor is generated from the second processing liquid, the water vapor is exhausted from the first exhaust port 28 a and the second exhaust port 28 b in the same manner as the gas generated from the first processing liquid.

[0119] (Third Relative Position) Next, the third relative position P3 will be described with reference to FIG.

[0120] The third relative position P3 is a relative position when the wafer We is placed on the turntable 20 and when the wafer We is moved from the turntable 20. The third relative position P3 is a relative position where the mounting portion 20a (mounting surface 120a) is located above (in the Z1 direction) the second protrusion 24e in the Z direction. For simplicity, a dashed line 99 is shown in FIG. 9 to indicate the position of the mounting surface 120a in the Z direction.

[0121] At the third relative position P3, the wafer We is placed on the placement part 20a when performing a process of forming a coating on the surface of the wafer We or a process of cleaning the surface of the wafer We. After the coating is formed on the surface of the wafer We or after cleaning, the relative position between the turntable 20 and the receiving member 23 is changed to the third relative position P3 in order to move the wafer We from the placement part 20a.

[0122] (Relative Position Change Processing) Next, with reference to FIG. 10, a process of changing the relative position performed by the control unit 3 (see FIG. 3) will be described.

[0123] In step S1, the control unit 3 determines whether or not to change the relative position to a first relative position P1 (see FIG. 7). In other words, the control unit 3 determines whether or not a process is to form a coating on the wafer We (see FIG. 7). If the relative position is to be changed to the first relative position P1, i.e., if a process is to be performed to form a coating on the wafer We, the process proceeds to step S2. If the relative position is not to be changed to the first relative position P1, the process proceeds to step S3.

[0124] In step S2, the control unit 3 controls the lifting mechanism 26 (see FIG. 7) so that the relative position becomes a first relative position P1 at which the first receiving unit 24 (see FIG. 7) can receive the first processing liquid. Specifically, when processing using the first processing liquid is performed, the control unit 3 controls the lifting mechanism 26 to move the receiving member 23 (see FIG. 7) to change the relative position to the first relative position P1. Thereafter, the processing ends.

[0125] When the process proceeds from step S1 to step S3, in step S3, the control unit 3 determines whether or not to change the relative position to the second relative position P2 (see FIG. 8 ). In other words, the control unit 3 determines whether or not the process is to clean the surface of the wafer We. When the relative position is to be changed to the second relative position P2, that is, when the process is to clean the wafer We, the process proceeds to step S4. When the relative position is not to be changed to the second relative position P2, the process proceeds to step S5.

[0126] When the process proceeds from step S3 to step S4, in step S4, the controller 3 controls the lifting mechanism 26 to change the relative position to a second relative position P2 at which the second receiving portion 25 (see FIG. 8) can receive the second processing liquid. Specifically, when processing using the second processing liquid is performed, the controller 3 controls the lifting mechanism 26 to move the receiving member 23, thereby changing the relative position to the second relative position P2. Thereafter, the process ends.

[0127] Furthermore, when the process proceeds from step S3 to step S5, in step S5, the control unit 3 controls the lifting mechanism 26 so that the relative position becomes the third relative position P3 (see FIG. 9 ). Specifically, the control unit 3 controls the lifting mechanism 26 to move the receiving member 23, thereby changing the relative position to the third relative position P3. Thereafter, the process ends.

[0128] By processing steps S1 to S5 above, the control unit 3 is configured to control the lifting mechanism 26 to change the relative position to one of the first relative position P1, the second relative position P2, and the third relative position P3.

[0129] (Effects of First Embodiment) In the first embodiment, the following effects can be obtained.

[0130] In the first embodiment, as described above, the film forming cleaning unit 2 is a film forming apparatus that performs a coating process on a wafer We as a pre-processing for the wafer We to be laser-machined, and includes a turntable unit 20 including a mounting unit 20a on which the wafer We is mounted when the coating process is performed on the wafer We and a rotating unit 20b that rotates the mounting unit 20a, a first processing liquid ejection unit 21 that ejects a first processing liquid onto the wafer We mounted on the mounting unit 20a, a second processing liquid ejection unit 22 that ejects a second processing liquid different from the first processing liquid onto the wafer We mounted on the mounting unit 20a, a first receiving unit 24 that is provided on the outer periphery of the turntable unit 20 and can receive the first processing liquid that has flowed to the outer periphery of the mounting unit 20a, and a second receiving unit 25 that is provided on the outer periphery of the turntable unit 20 and can receive the second processing liquid that has flowed to the outer periphery of the mounting unit 20a, and a receiving member 23 that is arranged to surround the side of the turntable unit 20.

[0131] As a result, in a configuration in which treatment with the first treatment liquid and treatment with the second treatment liquid are performed using a single turntable unit 20, the first receiving unit 24 and the second receiving unit 25 can separately receive the first treatment liquid and the second treatment liquid that have flowed to the outer periphery of the mounting unit 20a. Furthermore, by performing both treatment with the first treatment liquid and treatment with the second treatment liquid using a single turntable unit 20, the device configuration can be simplified. As a result, the first treatment liquid and the second treatment liquid, which are not desirable to be mixed and discharged, can be discharged separately while simplifying the device configuration.

[0132] Furthermore, in the first embodiment, as described above, the device further includes a lifting mechanism 26 that can change the relative position between the mounting unit 20 a and the receiving member 23 in the vertical direction by moving either the turntable unit 20 or the receiving member 23 in the vertical direction, and a control unit 3 that controls the lifting mechanism 26. The control unit 3 is configured to control the lifting mechanism 26 so that, when a process using a first processing liquid is performed, the relative position becomes a first relative position P1 at which the first receiving unit 24 can receive the first processing liquid, and to control the lifting mechanism 26 so that, when a process using a second processing liquid is performed, the relative position becomes a second relative position P2 at which the second receiving unit 25 can receive the second processing liquid. Thus, when discharging the first processing liquid, the lifting mechanism 26 is controlled so that the relative position becomes the first relative position P1, and when discharging the second processing liquid, the lifting mechanism 26 is controlled so that the relative position becomes the second relative position P2, thereby making it possible to easily separate and discharge the first processing liquid and the second processing liquid. As a result, in a configuration in which processing using the first processing liquid and processing using the second processing liquid are performed using a single rotating table unit 20, the first processing liquid and the second processing liquid, which are not desirable to mix and discharge, can be easily separated and discharged.

[0133] Furthermore, in the first embodiment, as described above, the first processing liquid is a coating material for forming a coating on the wafer We, the second processing liquid is a cleaning liquid for cleaning the wafer We, the first relative position P1 is a position for forming a coating on the wafer We, the second relative position P2 is a position for cleaning the wafer We, and the control unit 3 is configured to control the lifting mechanism 26 to change the relative position to any one of the first relative position P1, the second relative position P2, and the third relative position P3 for placing the wafer We on the turntable 20 and for moving the wafer We from the turntable 20. As a result, in a configuration in which the formation of a coating on the wafer We and the cleaning of the wafer We are performed using a single turntable 20, the first processing liquid and the second processing liquid can be easily separated and discharged. Furthermore, since the above-mentioned relative position can be changed to the third relative position P3 when placing the wafer We on the turntable portion 20 and when moving the wafer We from the turntable portion 20, it is easier to place the wafer We on the turntable portion 20 and move the wafer We from the turntable portion 20 compared to a configuration in which the above-mentioned relative position is not changed to the third relative position P3.

[0134] Furthermore, in the first embodiment, as described above, the first receiving portion 24 has a first outlet 24a for discharging the first treatment liquid, and the bottom surface 24b of the first receiving portion 24 is inclined downward toward the first outlet 24a. This allows the bottom surface 24b of the first receiving portion 24 to be inclined downward toward the first outlet 24a, which facilitates the first treatment liquid to flow toward the first outlet 24a. As a result, the first treatment liquid can be easily discharged from the first outlet 24a. This prevents the first treatment liquid from remaining in the first receiving portion 24, thereby preventing volatile gases from being generated from the organic solvent contained in the first treatment liquid and stagnation inside the receiving member 23.

[0135] In the first embodiment, as described above, the first receiving portion 24 is provided with a first exhaust port 28a located above the first exhaust port 24a for exhausting gas generated from the first processing liquid upward. Here, for example, the gas generated from the first processing liquid may include volatile gases such as ethanol, acetonitrile, and toluene, and the volatile gas may fill the vicinity of the turntable portion 20. However, it is undesirable for the volatile gas to fill the vicinity of the turntable portion 20, which rotates at high speed. Furthermore, if the volatile gas fills the vicinity of the turntable portion 20, it may leak into the clean room in which the film forming and cleaning portion 2 is located. Furthermore, if the film forming and cleaning portion 2 is located together with the laser processing apparatus 100, the filled volatile gas may flow near the processing point of the laser processing apparatus 100. Furthermore, if the filled volatile gas fills the vicinity of the laser processing apparatus 100, the filled volatile gas may leak near electrical contacts such as relays and breakers. Therefore, with the above configuration, the gas generated from the first processing liquid can be exhausted from the first receiving portion 24 through the first exhaust port 28a. Therefore, it is possible to prevent the gas generated from the first processing liquid from accumulating in the first receiving portion 24, and therefore to prevent the gas generated from the first processing liquid from filling the vicinity of the turntable portion 20. As a result, it is possible to prevent the volatile gas from leaking into the clean room, from flowing near the processing point of the laser processing apparatus 100, and from leaking near the electrical contacts. Furthermore, because the first exhaust port 28a is provided above the first exhaust port 24a, it is possible to prevent the first processing liquid from flowing into the first exhaust port 28a, unlike a configuration in which the first exhaust port 28a is provided near the first exhaust port 24a.

[0136] Furthermore, in the first embodiment, as described above, the second receiving portion 25 has the second outlet 25a for discharging the second treatment liquid, and the bottom surface 25b of the second receiving portion 25 is inclined downward toward the second outlet 25a. Since the bottom surface 25b of the second receiving portion 25 is inclined downward toward the second outlet 25a, the second treatment liquid can easily flow toward the second outlet 25a. As a result, the second treatment liquid can be easily discharged from the second outlet 25a. This makes it possible to prevent the second treatment liquid from remaining in the second receiving portion 25, thereby preventing water vapor from being generated from the second treatment liquid and stagnation inside the receiving member 23.

[0137] Furthermore, in the first embodiment, as described above, the second receiving portion 25 is provided with a second exhaust port 28b located above the second exhaust port 25a for exhausting gas generated from the first processing liquid upward. Here, gas generated from the first processing liquid may flow into the second receiving portion 25 and remain there. In this case, the gas generated from the first processing liquid remaining in the second receiving portion 25 may fill the vicinity of the turntable 20. Even in this case, volatile gas may leak into the clean room, flow near the processing point of the laser processing apparatus 100, or leak near the electrical contacts. Therefore, with the above-described configuration, even if gas generated from the first processing liquid flows into the second receiving portion 25, it can be exhausted through the second exhaust port 28b. Therefore, it is possible to prevent gas generated from the first processing liquid from remaining in the second receiving portion 25, thereby preventing the gas generated from the first processing liquid from filling the vicinity of the turntable 20. As a result, it is possible to prevent volatile gas from leaking into the clean room, from flowing near the processing point of the laser processing device 100, and from leaking near the electrical contacts. Furthermore, because the second exhaust port 28b is provided above the second exhaust port 25a, it is possible to prevent the second processing liquid from flowing into the second exhaust port 28b, unlike a configuration in which the second exhaust port 28b is provided near the second exhaust port 25a.

[0138] Furthermore, in the first embodiment, as described above, the first receiving portion 24 is provided closer to the outer periphery of the receiving member 23 than the second receiving portion 25. Here, by setting the rotation speed of the rotating portion 20b when processing the wafer We with the first processing liquid to be faster than the rotation speed of the rotating portion 20b when processing the wafer We with the second processing liquid, the first processing liquid can be scattered closer to the outer periphery of the receiving member 23 than the second processing liquid. Therefore, with the above-described configuration, by setting the rotation speed of the rotating portion 20b when processing the wafer We with the first processing liquid to be faster than the rotation speed of the rotating portion 20b when processing the wafer We with the second processing liquid, the first receiving portion 24, which is provided closer to the outer periphery of the receiving member 23 than the second receiving portion 25, can receive only the first processing liquid. As a result, the first processing liquid and the second processing liquid can be easily separated and discharged.

[0139] In the first embodiment, as described above, the inner circumferential surface 24c of the first receiving portion 24 and the outer circumferential surface 25c of the second receiving portion 25 are formed from a common plate-like member 29, and the plate-like member 29 has a first protrusion 29a that protrudes obliquely upward toward the center of the receiving member 23. This allows the first protrusion 29a to cause the second processing liquid that has splashed into the second receiving portion 25 to fall downward, thereby preventing the second processing liquid from flowing into the first receiving portion 24 and mixing of the first processing liquid and the second processing liquid. Furthermore, because the inner circumferential surface 24c of the first receiving portion 24 and the outer circumferential surface 25c of the second receiving portion 25 are formed from a common plate-like member 29, an increase in the number of parts can be prevented compared to when the inner circumferential surface 24c of the first receiving portion 24 and the outer circumferential surface 25c of the second receiving portion 25 are formed from separate plate-like members.

[0140] Furthermore, in the first embodiment, as described above, the outer peripheral surface 24d of the first receiving portion 24 has the second protruding portion 24e that protrudes obliquely upward toward the center of the receiving member 23. The second protruding portion 24e protrudes closer to the center of the receiving member 23 than the first protruding portion 29a and to a position higher than the first protruding portion 29a. This allows the first processing liquid that has scattered toward the outer peripheral side of the turntable 20 to fall downward by the second protruding portion 24e, and the first processing liquid that has fallen downward by the second protruding portion 24e can be moved into the first receiving portion 24 by the first protruding portion 29a. As a result, it is possible to effectively prevent the first processing liquid from flowing into the second receiving portion 25 and mixing of the first processing liquid and the second processing liquid.

[0141] Furthermore, in the first embodiment, as described above, the receiving member 23 further includes a first peripheral wall portion 30 that is disposed on the bottom surface 23a of the receiving member 23 inwardly of the outer peripheral surface 23b of the receiving member 23 and surrounds the rotating portion 20b, and the mounting portion 20a includes a second peripheral wall portion 31 that surrounds the first peripheral wall portion 30 and is disposed on the outer peripheral side of the first peripheral wall portion 30. As a result, the rotating portion 20b is surrounded by the first peripheral wall portion 30 and the second peripheral wall portion 31, and therefore, it is possible to prevent the second processing liquid and gas generated from the first processing liquid from flowing into the vicinity of the rotating portion 20b inside the first peripheral wall portion 30 and the second peripheral wall portion 31.

[0142] In the first embodiment, as described above, the lifting mechanism 26 is configured to be able to change the relative position by vertically moving the receiving member 23. This makes it possible to prevent the device configuration from becoming complicated, compared to a configuration in which the turntable unit 20 including the rotating unit 20b is moved vertically.

[0143] Furthermore, in the first embodiment, as described above, the control unit 3 controls the lifting mechanism 26 to be at the first relative position P1, and also controls the second processing liquid discharge unit 22 to discharge the cleaning liquid at the first relative position P1. This allows the cleaning liquid to be used to wash away any dried resin that has adhered to the coating material and does not flow away, even if it adheres to the inside of the first receiving portion 24. As a result, it is possible to prevent the resin adhering to the inside of the first receiving portion 24 from interfering with the discharge of the coating material.

[0144] As described above, the first embodiment further includes a cassette unit 4 that accommodates wafers We, and the cassette unit 4 is disposed directly above the turntable unit 20 and the receiving member 23. This allows the cassette unit 4, the turntable unit 20, and the receiving member 23 to be concentrated in positions in the same direction of the laser processing apparatus 100. As a result, the size of the apparatus can be reduced compared to a configuration in which the cassette unit 4 is disposed on either the left or right side of the turntable unit 20 and the receiving member 23. Furthermore, the cassette unit 4, the turntable unit 20, and the receiving member 23 can be concentrated in positions in the same direction of the laser processing apparatus 100. This allows the side of the cassette unit 4 where a user inserts or removes a cassette containing wafers We and the side where maintenance and / or cleaning of the turntable unit 20 is performed to be disposed in the same direction. This makes it possible to easily perform maintenance of the cassette unit 4, the turntable unit 20, and the receiving member 23 even when multiple laser processing apparatuses 100 are disposed side by side in the left-right direction. As a result, it is possible to improve usability for the user.

[0145] In the first embodiment, as described above, the laser processing apparatus 100 includes the laser irradiation unit 10 that processes the wafer We by irradiating a laser beam toward an irradiation position, the turntable unit 20 that includes the mounting unit 20a on which the wafer We is mounted when a coating process is performed on the wafer We to be laser processed, and the rotating unit 20b that rotates the mounting unit 20a, the first processing liquid discharge unit 21 that discharges a first processing liquid, which is a coating material for forming a coating, onto the wafer We mounted on the mounting unit 20a, and the first processing liquid discharge unit 22 that discharges a first processing liquid, which is a coating material for forming a coating, onto the wafer We mounted on the mounting unit 20a. The rotating table 20 includes a second processing liquid ejection unit 22 that ejects a second processing liquid, which is a cleaning liquid for cleaning the wafer We, onto the wafer We placed on the mounting unit 20a, a first receiving unit 24 that is provided on the outer periphery of the rotating table 20 and can receive the first processing liquid that has flowed to the outer periphery of the mounting unit 20a, and a receiving member 23 that is arranged to surround the side of the rotating table 20.

[0146] This makes it possible to provide a laser processing apparatus 100 that, like the film forming and cleaning section 2 described above, simplifies the device configuration while being able to separately discharge the first processing liquid and the second processing liquid, which are not desirable to mix and discharge.

[0147] Furthermore, in the first embodiment, as described above, the laser processing apparatus 100 further includes an elevating mechanism 26 that can change the relative position between the mounting unit 20 a and the receiving member 23 in the vertical direction by moving either the turntable unit 20 or the receiving member 23 in the vertical direction, and a control unit 3 that controls the elevating mechanism 26. The control unit 3 is configured to control the elevating mechanism 26 so that, when a process using the first processing liquid is performed, the relative position becomes a first relative position P1 at which the first receiving unit 24 can receive the first processing liquid, and to control the elevating mechanism 26 so that, when a process using the second processing liquid is performed, the relative position becomes a second relative position P2 at which the second receiving unit 25 can receive the second processing liquid. Thus, in a configuration in which processes using the first processing liquid and processes using the second processing liquid are performed using a single turntable unit 20, similar to the film forming and cleaning unit 2, it is possible to provide a laser processing apparatus 100 that can easily separate and discharge the first processing liquid and the second processing liquid, which should not be discharged together.

[0148] Second Embodiment Next, a laser processing apparatus 200 according to a second embodiment will be described with reference to Figures 11 to 16. Note that the same components as those in the laser processing apparatus 100 according to the first embodiment are denoted by the same reference numerals, and detailed description thereof will be omitted.

[0149] Unlike the configuration of the first embodiment described above, in which the relative position is changed by moving the receiving member 23 by controlling the lifting mechanism 26, the laser processing apparatus 200 according to the second embodiment changes the relative position by moving the rotary table portion 20.

[0150] As shown in FIG. 11, the laser processing apparatus 200 according to the second embodiment differs from the laser processing apparatus 100 according to the first embodiment in that it is equipped with a control unit 201 and a film forming and cleaning unit 202 instead of the control unit 3 and the film forming and cleaning unit 2.

[0151] The control unit 201 differs from the control unit 3 according to the first embodiment in that it controls the film forming and cleaning unit 202 .

[0152] The film forming and cleaning unit 202 differs from the film forming and cleaning unit 2 according to the first embodiment in that it includes an elevating mechanism 203 instead of the elevating mechanism 26 .

[0153] The lifting mechanism 203 differs from the lifting mechanism 26 according to the first embodiment in that it moves the rotary table portion 20 instead of the receiving member 23 .

[0154] 12, the lifting mechanism 203 includes a rotating unit holder 203a and a driving unit 203b. The rotating unit holder 203a holds the rotating unit 20b from below (Z2 direction). The driving unit 203b moves the rotating unit holder 203a in the Z direction. As a result, the lifting mechanism 203 moves the turntable unit 20 in the Z direction. The driving unit 203b includes a ball screw mechanism, a cylinder mechanism, or the like.

[0155] Next, a configuration in which the control unit 201 according to the second embodiment changes the relative position to the first relative position P4 to the third relative position P6 will be described with reference to FIGS.

[0156] The first relative position P4 shown in Figure 13 is the relative position when a coating is formed on the surface of the wafer We. The first relative position P4 is the relative position where the mounting portion 20a (mounting surface 120a) is located between the first protrusion 29a and the second protrusion 24e in the Z direction. The first relative position P4 according to the second embodiment is the same relative position as the first relative position P1 according to the first embodiment, except that the control unit 201 controls the lifting mechanism 203 to change the relative position. Note that, for simplicity, a dashed line 97 is also shown in Figure 13 to indicate the position of the mounting surface 120a in the Z direction.

[0157] The second relative position P5 shown in Figure 14 is the relative position when cleaning the surface of the wafer We. The second relative position P2 is the relative position where the mounting portion 20a (mounting surface 120a) is located lower (in the Z2 direction) than the first protrusion 29a in the Z direction. The second relative position P5 according to the second embodiment is the same relative position as the second relative position P2 according to the first embodiment, except that the controller 201 controls the lifting mechanism 203 to change the relative position. Note that, for simplicity, a dashed line 98 is also shown in Figure 14 to indicate the position of the mounting surface 120a in the Z direction.

[0158] The third relative position P6 shown in FIG. 15 is the relative position when the wafer We is placed on the turntable 20 and when the wafer We is moved from the turntable 20. The third relative position P3 is the relative position where the mounting portion 20a (mounting surface 120a) is located above (in the Z1 direction) the second protrusion 24e in the Z direction. The third relative position P6 according to the second embodiment is the same relative position as the third relative position P3 according to the first embodiment, except that the controller 201 controls the lifting mechanism 203 to change the relative position. Note that, for simplicity, a dashed line 99 is also shown in FIG. 15 to indicate the position of the mounting surface 120a in the Z direction.

[0159] Next, the process of changing the relative position performed by the control unit 201 will be described with reference to FIG.

[0160] In step S10, the control unit 201 determines whether or not to change the relative position to the first relative position P4. In other words, the control unit 201 determines whether or not the process is to form a coating on the wafer We. If the relative position is to be changed to the first relative position P4, i.e., if the process is to form a coating on the wafer We, the process proceeds to step S11. If the relative position is not to be changed to the first relative position P4, the process proceeds to step S12.

[0161] In step S11, the control unit 201 controls the lifting mechanism 203 to move the turntable 20 to a first relative position P4 where the first processing liquid can be received by the first receiving unit 24. In other words, when processing using the first processing liquid is performed, the control unit 201 controls the lifting mechanism 203 to move the turntable 20, thereby changing the relative position to the first relative position P4. Then, the processing ends.

[0162] When the process proceeds from step S10 to step S12, the control unit 201 determines in step S12 whether or not to change the relative position to the second relative position P5. In other words, the control unit 201 determines whether or not the process is to clean the surface of the wafer We. When the relative position is to be changed to the second relative position P5, that is, when the process is to clean the wafer We, the process proceeds to step S13. When the relative position is not to be changed to the second relative position P5, the process proceeds to step S14.

[0163] When the process proceeds from step S12 to step S13, in step S13, the control unit 201 controls the lifting mechanism 203 to change the relative position to a second relative position P5 at which the second receiving unit 25 can receive the second processing liquid. Specifically, when processing using the second processing liquid is performed, the control unit 201 controls the lifting mechanism 203 to move the turntable unit 20, thereby changing the relative position to the second relative position P5. Thereafter, the process ends.

[0164] Furthermore, when the process proceeds from step S12 to step S14, in step S14, the control unit 201 controls the lifting mechanism 203 so that the relative position becomes the third relative position P6. Specifically, the control unit 201 controls the lifting mechanism 203 to move the turntable unit 20, thereby changing the relative position to the third relative position P6. Thereafter, the process ends.

[0165] By processing steps S10 to S14, the control unit 201 is configured to control the lifting mechanism 203 to change the relative position to one of the first relative position P4, the second relative position P5, and the third relative position P6.

[0166] Other configurations of the laser processing apparatus 200 and the film forming and cleaning unit 202 according to the second embodiment are similar to those of the laser processing apparatus 100 and the film forming and cleaning unit 2 according to the first embodiment.

[0167] (Effects of Second Embodiment) In the second embodiment, the following effects can be obtained.

[0168] In the second embodiment, as described above, the film forming and cleaning unit 202 (laser processing apparatus 200) includes the control unit 201 that controls the lifting mechanism 203, and the lifting mechanism 203 that moves the turntable unit 20. As a result, by moving the turntable unit 20, the relative position between the turntable unit 20 and the receiving member 23 can be changed to the first relative position P4 and the second relative position P5. Therefore, similar to the film forming and cleaning unit 2 (laser processing apparatus 100) according to the first embodiment, it is possible to provide a film forming and cleaning unit 202 (laser processing apparatus 200) that has a simplified device configuration and is capable of separately discharging the first processing liquid and the second processing liquid, which should not be mixed and discharged.

[0169] Other effects of the second embodiment are similar to those of the first embodiment.

[0170] [Modifications] The embodiments disclosed herein should be considered to be illustrative in all respects and not restrictive. The scope of the present invention is defined by the claims, not by the description of the above-mentioned embodiments, and further includes all modifications (modifications) within the meaning and scope of the claims.

[0171] For example, in the first and second embodiments, an example in which the present invention is applied to the laser processing apparatus 100 (laser processing apparatus 200) has been described, but the present invention is not limited to this. The present invention may also be applied to a film forming apparatus 300, as shown in Fig. 17. That is, as in the first and second embodiments, the laser processing apparatus 100 (laser processing apparatus 200) and the film forming and cleaning unit 2 (film forming and cleaning unit 202) may be integrally formed, or as in a modified example, the laser processing apparatus 100 (laser processing apparatus 200) and the film forming apparatus 300 may be arranged separately.

[0172] The film forming apparatus 300 according to the modified example includes a rotary table 20 including a mounting portion 20a on which the wafer We (see FIG. 1) is mounted when processing is performed on the wafer We, and a rotating portion 20b that rotates the mounting portion 20a. The film forming apparatus 300 also includes a first processing liquid discharge portion 21 that discharges a first processing liquid, which is a coating material for forming a coating, onto the wafer We mounted on the mounting portion 20a. The film forming apparatus 300 also includes a second processing liquid discharge portion 22 that discharges a second processing liquid, which is a cleaning liquid for cleaning the wafer We, onto the wafer We mounted on the mounting portion 20a. The film forming apparatus 300 also includes a receiving member 23 that is arranged to surround the side of the turntable 20 and that includes a first receiving portion 24 that is provided on the outer periphery of the turntable 20 and that can receive the first processing liquid that has flowed to the outer periphery of the mounting portion 20a, and a second receiving portion 25 that is provided on the outer periphery of the turntable 20 and that can receive the second processing liquid that has flowed to the outer periphery of the mounting portion 20a. The film forming apparatus 300 also includes an elevating mechanism 26 that can change the relative position of the mounting portion 20a and the receiving member 23 in the vertical direction by moving either the turntable 20 or the receiving member 23 in the vertical direction.

[0173] The film forming apparatus 300 also includes a control unit 301 that controls the lifting mechanism 26. Similar to the control unit 3 of the first embodiment, the control unit 301 of the modified example controls the lifting mechanism 26 so that, when processing with the first processing liquid is performed, the relative position is a first relative position P1 at which the first receiving unit 24 can receive the first processing liquid, and controls the lifting mechanism 26 so that, when processing with the second processing liquid is performed, the relative position is a second relative position P2 at which the second receiving unit 25 can receive the second processing liquid. The film forming apparatus 300 of the modified example also includes a wafer transport unit 5 and a warm air blower 27. That is, the film forming apparatus 300 of the modified example has the same configuration as the laser processing apparatus 100 of the first embodiment, except that it does not include the dicing unit 1 (laser irradiation unit 10). The film forming apparatus 300 may also include a lifting mechanism that moves the turntable unit 20, and the control unit may change the relative position by controlling the lifting mechanism to move the turntable unit 20.

[0174] The modified film forming apparatus 300, like the laser processing apparatus 100 of the first embodiment, has the above-mentioned configuration and can simplify the apparatus configuration while separately discharging the first processing liquid and the second processing liquid, which are not desirable to mix and discharge.

[0175] Furthermore, in the first and second embodiments, an example of a configuration in which the laser processing apparatus 100 (laser processing apparatus 200) includes the lifting mechanism 26 (lifting mechanism 203) and the control unit 3 (control unit 201) that controls the lifting mechanism 26 (lifting mechanism 203) is shown, but the present invention is not limited to this. In the present invention, the laser processing apparatus does not need to include the lifting mechanism and the control unit. However, if the laser processing apparatus does not include the lifting mechanism and the control unit, it becomes difficult to change the relative position of the rotary table unit and the receiving member. Therefore, it is preferable that the laser processing apparatus include the lifting mechanism and the control unit.

[0176] In the first and second embodiments, the control unit 3 (control unit 201) controls the lifting mechanism 26 (lifting mechanism 203) to change the relative position between the turntable 20 and the receiving member 23 to one of the first relative position P1 (first relative position P4), the second relative position P2 (second relative position P5), and the third relative position P3 (third relative position P6). However, the present invention is not limited to this configuration. In the present invention, the control unit may change the relative position between the turntable 20 and the receiving member to either the first relative position or the second relative position, without changing the relative position to the third relative position. However, if the control unit does not change the relative position between the turntable 20 and the receiving member to the third relative position, it will be difficult to place the wafer on the mounting portion and to move the wafer from the turntable 20. Therefore, it is preferable that the control unit change the relative position between the turntable 20 and the receiving member to one of the first relative position, the second relative position, and the third relative position.

[0177] In the first and second embodiments, the first and second discharge ports 24a and 25a are provided at four equal intervals on the receiving member 23. However, the present invention is not limited to this. The arrangement and number of the first and second discharge ports may be set at any desired positions.

[0178] Furthermore, in the first and second embodiments, an example was shown in which the bottom surface 24b of the first receiving portion 24 is inclined downward toward the first outlet 24a and the bottom surface 25b of the second receiving portion 25 is inclined downward toward the second outlet 25a. However, the present invention is not limited to this. In the present invention, the bottom surface of the first receiving portion does not have to be inclined downward toward the first outlet. Furthermore, the bottom surface of the second receiving portion does not have to be inclined downward toward the second outlet. However, if the bottom surface of the first receiving portion is not inclined downward toward the first outlet, the first treatment liquid is less likely to be discharged from the first outlet. Furthermore, if the bottom surface of the second receiving portion is not inclined downward toward the second outlet, the second treatment liquid is less likely to be discharged from the second outlet. Therefore, it is preferable that the bottom surface of the first receiving portion be inclined downward toward the first outlet. It is also preferable that the bottom surface of the second receiving portion be inclined downward toward the second outlet.

[0179] In the first and second embodiments, the first exhaust ports 28a and the second exhaust ports 28b are provided at equal intervals in four locations on the receiving member 23. However, the present invention is not limited to this. The arrangement and number of the first exhaust ports and the second exhaust ports can be set at any desired positions and in any desired number.

[0180] Furthermore, in the first and second embodiments, an example was shown in which the first receiving portion 24 has the first exhaust port 28a, but the present invention is not limited to this. In the present invention, the first receiving portion does not have to have the first exhaust port. However, if the first receiving portion does not have the first exhaust port, it becomes difficult to exhaust the gas generated from the first processing liquid. Therefore, it is preferable that the first receiving portion has the first exhaust port.

[0181] Furthermore, in the first and second embodiments described above, an example was shown in which the first exhaust port 28a was provided above the first exhaust port 24a and the second exhaust port 28b was provided above the second exhaust port 25a. However, the present invention is not limited to this. In the present invention, the first exhaust port may be provided at the same height as the first exhaust port. Furthermore, the second exhaust port may be provided at the same height as the second exhaust port. However, if the first exhaust port is provided at the same height as the first exhaust port, there is a possibility that the first treatment liquid will also be sucked in when gas generated from the first treatment liquid is exhausted. Therefore, it is preferable that the first exhaust port be provided above the first exhaust port. From the same viewpoint as the first exhaust port, it is also preferable that the second exhaust port be provided above the second exhaust port.

[0182] In the first and second embodiments, the first exhaust port 24a and the first exhaust port 28a are provided at the same circumferential position of the receiving member 23, and the second exhaust port 25a and the second exhaust port 28b are provided at the same circumferential position of the receiving member 23. However, the present invention is not limited to this. In the present invention, the first exhaust port and the first exhaust port may be provided at different circumferential positions of the receiving member. Furthermore, the second exhaust port and the second exhaust port may be provided at different circumferential positions of the receiving member.

[0183] Furthermore, in the first and second embodiments, the first receiving portion 24 is disposed closer to the outer periphery of the receiving member 23 than the second receiving portion 25. However, the present invention is not limited to this. In the present invention, the second receiving portion may be disposed closer to the outer periphery of the receiving member than the first receiving portion. However, the rotation speed of the turntable when forming a coating on the wafer surface is faster than the rotation speed of the turntable when cleaning the wafer surface. Therefore, if the second receiving portion is disposed closer to the outer periphery of the receiving member than the first receiving portion, it becomes difficult for the second receiving portion to receive the second processing liquid, making it difficult to separately discharge the first processing liquid and the second processing liquid. Therefore, it is preferable that the first receiving portion be disposed closer to the outer periphery of the receiving member than the second receiving portion.

[0184] In the first and second embodiments, the inner peripheral surface 24c of the first receiving portion 24 and the outer peripheral surface 25c of the second receiving portion 25 are formed from a common plate-like member 29. However, the present invention is not limited to this. In the present invention, the inner peripheral surface of the first receiving portion and the outer peripheral surface of the second receiving portion may be formed from different plate-like members. However, if the inner peripheral surface of the first receiving portion and the outer peripheral surface of the second receiving portion are formed from different plate-like members, the number of parts increases. Therefore, it is preferable that the inner peripheral surface of the first receiving portion and the outer peripheral surface of the second receiving portion are formed from a common plate-like member.

[0185] Furthermore, in the first and second embodiments described above, an example was shown in which the plate-shaped member 29 has a first protrusion 29a that protrudes obliquely upward toward the center of the receiving member 23, but the present invention is not limited to this. In the present invention, the plate-shaped member does not have to have a first protrusion. However, if the plate-shaped member does not have a first protrusion, it becomes difficult to cause the second treatment liquid that has splashed into the second receiving portion to fall downward. In this case, the second treatment liquid may become mixed into the first receiving portion. Therefore, it is preferable that the plate-shaped member have a first protrusion.

[0186] Furthermore, in the first and second embodiments described above, an example was shown in which the outer peripheral surface 24d of the first receiving portion 24 has a second protrusion 24e that protrudes obliquely upward toward the center of the receiving member 23. However, the present invention is not limited to this. In the present invention, the outer peripheral surface of the first receiving portion does not have to have the second protrusion. However, if the outer peripheral surface of the first receiving portion does not have the second protrusion, depending on the relative position between the turntable and the receiving member and the rotation speed of the turntable, it may be difficult to drop the first processing liquid that has splashed toward the outer periphery of the turntable. Therefore, it is preferable that the outer peripheral surface of the first receiving portion has the second protrusion.

[0187] Furthermore, in the first and second embodiments, the second protrusion 24e is positioned closer to the center of the receiving member 23 than the first protrusion 29a and protrudes to a position higher than the first protrusion 29a. However, the present invention is not limited to this. In the present invention, the second protrusion may be configured to protrude to the same height as the first protrusion or to a lower height than the first protrusion. However, if the second protrusion is configured to protrude to the same height as the first protrusion or to a lower height than the first protrusion, depending on the rotation speed of the turntable, it may be difficult to cause the first processing liquid that has splashed to the outer periphery of the turntable to fall downward. Therefore, it is preferable that the second protrusion be configured to protrude to a position closer to the center of the receiving member than the first protrusion and to a position higher than the first protrusion.

[0188] In the first and second embodiments, for convenience of explanation, the control processing of the control unit 3 (control unit 201) is explained using a flow-driven flowchart in which processing is performed sequentially according to a processing flow, but the present invention is not limited to this. In the present invention, the control processing of the control unit may be performed by event-driven processing in which processing is performed on an event-by-event basis. In this case, the control processing may be performed completely event-driven, or may be performed in a combination of event-driven and flow-driven processing.

[0189] DESCRIPTION OF SYMBOLS 2, 202 Film forming and cleaning section (film forming apparatus) 3, 201, 301 Control section 4 Cassette section (wafer accommodating section) 10 Laser irradiation section 20 Rotary table section 20a Placement section 20b Rotation section 21 First processing liquid discharge section 22 Second processing liquid discharge section 23 Receiving member 23a Bottom surface (bottom surface of receiving member) 24 First receiving section 24a First discharge port 24b Bottom surface (bottom surface of first receiving section) 24c Inner peripheral surface (inner peripheral surface of first receiving section) 24d Outer peripheral surface (outer peripheral surface of first receiving section) 24e Second protrusion 25 Second receiving section 25a Second discharge port 25b Bottom surface (bottom surface of second receiving section) 25c Outer peripheral surface (outer peripheral surface of second receiving section) 26, 203 Elevating mechanism 28a First exhaust port 28b Second exhaust port 29 Plate-like member 29a First protrusion 30 First peripheral wall 31 Second peripheral wall 100, 200 Laser processing device 300 Film forming device P1, P4 First relative position P2, P5 Second relative position P3, P6 Third relative position We Wafer

Claims

1. A film formation apparatus for performing a coating process on a wafer as a pre-processing for the wafer to be laser processed, comprising: a turntable section including a mounting section on which the wafer is placed when the wafer is subjected to the coating process, and a rotation section for rotating the mounting section; a first processing liquid discharge section for discharging a first processing liquid onto the wafer placed on the mounting section; a second processing liquid discharge section for discharging a second processing liquid different from the first processing liquid onto the wafer placed on the mounting section; and a receiving member arranged to surround the sides of the turntable section, including a first receiving section provided on the outer periphery of the turntable section and capable of receiving the first processing liquid that has flowed to the outer periphery of the mounting section, and a second receiving section provided on the outer periphery of the turntable section and capable of receiving the second processing liquid that has flowed to the outer periphery of the mounting section.

2. The film forming apparatus of claim 1, further comprising: a lifting mechanism capable of changing the relative position between the placement unit and the receiving member in the vertical direction by moving either the rotating table unit or the receiving member in the vertical direction; and a control unit that controls the lifting mechanism, wherein the control unit is configured to control the lifting mechanism so that, when processing is performed with the first processing liquid, the relative position becomes a first relative position at which the first receiving unit can receive the first processing liquid, and to control the lifting mechanism so that, when processing is performed with the second processing liquid, the relative position becomes a second relative position at which the second receiving unit can receive the second processing liquid.

3. The film forming apparatus of claim 2, wherein the first processing liquid is a coating material for forming a coating on the wafer, the second processing liquid is a cleaning liquid for cleaning the wafer, the first relative position is a position for forming a coating on the wafer, and the second relative position is a position for cleaning the wafer, and the control unit is configured to control the lifting mechanism to change the relative position to one of the first relative position, the second relative position, and a third relative position when the wafer is placed on the rotating table unit and when the wafer is moved from the rotating table unit.

4. The film forming apparatus according to claim 1, wherein the first receiving portion has a first outlet for discharging the first processing liquid, and the bottom surface of the first receiving portion is inclined downward toward the first outlet.

5. A film forming apparatus as described in claim 4, wherein the first receiving section is provided with a first exhaust port at a position above the first exhaust port for exhausting gas generated from the first processing liquid upward.

6. The film forming apparatus according to claim 1, wherein the second receiving portion has a second outlet for discharging the second processing liquid, and the bottom surface of the second receiving portion is inclined downward toward the second outlet.

7. A film forming apparatus as described in claim 6, wherein the second receiving section is provided with a second exhaust port at a position above the second exhaust port for exhausting gas generated from the first processing liquid upward.

8. The film forming apparatus according to claim 1, wherein the first receiving portion is provided closer to the outer periphery of the receiving member than the second receiving portion.

9. A film forming apparatus as described in claim 1, wherein the inner surface of the first receiving portion and the outer surface of the second receiving portion are formed from a common plate-like member, and the plate-like member has a first protrusion that protrudes diagonally upward toward the center of the receiving member.

10. A film forming apparatus as described in claim 9, wherein the outer peripheral surface of the first receiving portion has a second protruding portion that protrudes diagonally upward toward the center of the receiving member, and the second protruding portion protrudes to a position closer to the center of the receiving member than the first protruding portion and to a position higher than the first protruding portion.

11. The film forming apparatus of claim 1, wherein the receiving member further has a first peripheral wall portion on the bottom surface of the receiving member, which is positioned inward from the outer peripheral surface of the receiving member and surrounds the rotating portion, and the mounting portion has a second peripheral wall portion which surrounds the first peripheral wall portion and is positioned outer circumferentially of the first peripheral wall portion.

12. The film forming apparatus according to claim 2, wherein the lifting mechanism is configured to be able to change the relative position by moving the receiving member in the vertical direction.

13. The film forming apparatus according to claim 3, wherein the control unit controls the lifting mechanism to be at the first relative position and controls the second processing liquid discharge unit to discharge the cleaning liquid at the first relative position.

14. The film forming apparatus according to claim 1, further comprising a wafer accommodating section for accommodating the wafer, the wafer accommodating section being disposed directly above the rotary table section and the receiving member.

15. A laser processing device comprising: a laser irradiation unit that processes a wafer by irradiating a laser toward an irradiation position; a turntable unit including a mounting unit on which a wafer is placed when a coating process is performed on the wafer to be laser processed, and a rotation unit that rotates the mounting unit; a first processing liquid discharge unit that discharges a first processing liquid that is a coating material for forming a coating onto the wafer placed on the mounting unit; a second processing liquid discharge unit that discharges a second processing liquid that is a cleaning liquid for cleaning the wafer onto the wafer placed on the mounting unit; and a receiving member arranged to surround the sides of the turntable unit, including a first receiving unit provided on the outer periphery of the turntable unit and capable of receiving the first processing liquid that has flowed to the outer periphery of the mounting unit, and a second receiving unit provided on the outer periphery of the turntable unit and capable of receiving the second processing liquid that has flowed to the outer periphery of the mounting unit.

16. A laser processing apparatus as described in claim 15, further comprising: a lifting mechanism capable of changing the relative position between the placement unit and the receiving member in the vertical direction by moving either the rotating table unit or the receiving member in the vertical direction; and a control unit that controls the lifting mechanism, wherein the control unit is configured to control the lifting mechanism so that, when processing is performed with the first processing liquid, the relative position becomes a first relative position at which the first receiving unit can receive the first processing liquid, and to control the lifting mechanism so that, when processing is performed with the second processing liquid, the relative position becomes a second relative position at which the second receiving unit can receive the second processing liquid.

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