Film forming apparatus and laser processing apparatus

Abstract

This film forming apparatus 2 comprises: a rotation table unit 20 that includes a placement part 20a on which a wafer We is placed and a rotation part 20b which rotates the placement part 20a; a potential-difference coating material discharge unit 21 that discharges a coating material Fc in a state in which a potential difference is applied thereto; and a control unit 3 that performs control for rotating the rotation table unit 20 and also controls the potential-difference coating material discharge unit 21 so that the coating material Fc is discharged to the surface of the wafer We while the rotation table unit 20 is rotating.

Description

Film forming equipment and laser processing equipment

[0001] The present invention relates to a film forming apparatus and a laser processing apparatus, and more particularly to a film forming apparatus and a laser processing apparatus that form a coating by discharging a coating material while the wafer is being rotated.

[0002] A conventional film forming apparatus is known that forms a protective film (coating) by discharging a coating material onto a rotating wafer. Such a film forming apparatus is disclosed, for example, in Japanese Patent No. 4777783.

[0003] Japanese Patent No. 4777783 discloses a laser processing apparatus (film forming apparatus) including a chuck table for holding a wafer and a protective film coating means for forming a protective film on the wafer held on the chuck table. The protective film coating means disclosed in Japanese Patent No. 4777783 includes a spinner table mechanism having a spinner table and an electric motor for rotating the spinner table, and a resin liquid supply nozzle for supplying a resin solution toward the surface of the wafer. The protective film coating means disclosed in Japanese Patent No. 4777783 is configured to drip a resin solution from the resin liquid supply nozzle onto the surface of the wafer held on the spinner table while the spinner table is rotating, thereby forming a protective film on the surface of the wafer by centrifugal force.

[0004] Patent No. 4777783

[0005] As disclosed in the above-mentioned Japanese Patent No. 4777783, when a resin solution (coating material) is dropped onto a rotating spinner table (mounting section) and a protective film (coating) is formed by centrifugal force, a large portion of the dropped coating material scatters, resulting in waste of the coating material. Therefore, there is a need for a coating deposition apparatus and a laser processing apparatus that can improve the material consumption efficiency of the coating material.

[0006] The present invention has been made to solve the above-mentioned problems, and one object of the present invention is to provide a film forming apparatus and a laser processing apparatus that can improve the material consumption efficiency of the coating material.

[0007] A film forming apparatus according to a first aspect of the present invention is a film forming apparatus that performs a coating process on a wafer as a pre-processing for the wafer to be laser processed, and includes a turntable unit including a mounting unit on which the wafer is placed when the wafer is subjected to the coating process and a rotating unit that rotates the mounting unit, a coating material potential difference discharge unit that discharges the coating material while applying a potential difference between the wafer placed on the mounting unit and the coating material, and a control unit that controls the rotation of the turntable unit and controls the coating material potential difference discharge unit so that the coating material is discharged onto the surface of the wafer while the turntable unit is rotating.

[0008] As described above, the film forming apparatus according to a first aspect of the present invention includes a coating material potential difference discharge unit that discharges a coating material while applying a potential difference between the wafer placed on the mounting unit and the coating material, and a control unit that controls the rotation of the turntable and controls the coating material potential difference discharge unit so that the coating material is dispensed onto the surface of the wafer while the turntable is rotating. This allows the coating material to be applied to the wafer by dispensing the coating material while applying a potential difference, thereby applying the coating material to the target area with a predetermined thickness, and therefore no waste of the coating material occurs. Therefore, waste of the coating material can be suppressed when forming a coating on a wafer using a coating material that can be dispensed while applying a potential difference. As a result, the material consumption efficiency of the coating material can be improved.

[0009] In the film forming apparatus according to the first aspect, the coating material potential difference discharge unit preferably discharges the liquid coating material directly downward and is positioned above the mounting unit at a predetermined distance so that the discharged coating material is applied to the wafer in liquid form. This configuration allows the coating material discharged from the coating material potential difference discharge unit to be applied to the wafer in liquid form before it is atomized by the potential difference. Therefore, compared to a configuration in which atomized coating material is applied to the wafer, unevenness in the thickness of the coating formed on the wafer surface can be reduced. As a result, unevenness in the thickness of the coating formed on the wafer surface can be reduced while improving the material consumption efficiency of the coating material.

[0010] The film forming apparatus according to the first aspect preferably further includes a coating material dropping unit that drops a coating material onto the surface of the wafer placed on the mounting unit, and the control unit selectively controls whether the coating material potential difference dispensing unit dispenses the coating material while the turntable unit is rotating, or whether the coating material dropping unit dispenses the coating material onto the center of the wafer. With this configuration, even if the coating material cannot be dispensed under a potential difference, the coating material can be applied to the wafer by switching to a dropping method that offers a wide range of coating material (resin) options (high versatility). As a result, a highly versatile film forming apparatus can be provided that can form coatings regardless of the type of coating material.

[0011] In this case, the apparatus preferably further includes an input receiving unit that receives an operator's input regarding the type of coating material or the coating formation method, and the control unit selectively switches between discharging the coating material using the coating material potential difference discharge unit and dripping the coating material using the coating material dripping unit based on the input from the input receiving unit. With this configuration, the operator can input the type of coating material or the coating formation method, and thereby control the coating material to be discharged using the coating material potential difference discharge unit or dripped using the coating material dripping unit in accordance with the input. As a result, it is possible to easily switch between discharging the coating material using the coating material potential difference discharge unit and dripping the coating material using the coating material dripping unit, thereby improving operator convenience (usability).

[0012] In a configuration in which the control unit selectively controls whether the coating material is discharged by the coating material potential difference discharge unit or dropped by the coating material dropping unit based on input from the input receiving unit, the control unit preferably controls the coating material to be dispensed while moving the coating material potential difference discharge unit in the radial direction of the wafer from near the center position toward the outer periphery of the wafer while the turntable unit is rotating. With this configuration, the rotation of the turntable unit and the movement of the coating material potential difference discharge unit can apply the coating material to the wafer surface without gaps. Note that "near the center position" includes both the center position of the wafer and positions surrounding the center position of the wafer.

[0013] In this case, the control unit preferably controls the coating material application while moving the rotating table and the coating material potential difference discharge unit relative to each other in a spiral pattern from near the center to the wafer's outer periphery. Here, if the coating material is applied around the wafer at a predetermined width around each periphery, the coating material potential difference discharge unit must be moved in the radial direction of the wafer when moving to the next periphery. At this time, overlapping coatings of coating material occur at the position where the coating material potential difference discharge unit switches between moving in the radial direction of the wafer and moving in the circumferential direction of the wafer. Therefore, the above configuration allows the coating material to be applied while moving the rotating table and the coating material potential difference discharge unit relative to each other in a spiral pattern, thereby preventing overlapping coatings. As a result, unevenness in the coating material thickness on the wafer surface can be prevented. In addition, moving the rotating table portion and the coating material potential difference discharge portion relative to each other in a spiral shape means moving the rotating table portion and the coating material potential difference discharge portion relative to each other in a two-dimensional spiral shape within the plane of the rotating table portion.

[0014] In the above-described configuration, the coating material potential difference discharger discharges the liquid coating material directly downward and is positioned above the mounting unit at a predetermined distance so that the discharged coating material can be applied to the wafer in liquid form. Preferably, the configuration further includes an elevation mechanism for vertically moving the turntable, the coating material potential difference discharger including a discharge nozzle for discharging the coating material, and the control unit controls the elevation mechanism to raise and lower the turntable so that the distance between the wafer and the discharge nozzle is the predetermined distance. This configuration allows the discharge nozzle to be easily positioned at a distance that allows the coating material discharged from the coating material potential difference discharger to be applied in liquid form without becoming mist. As a result, the coating material discharged from the potential difference discharger can be applied to the wafer in liquid form.

[0015] In the above-described configuration in which the control unit controls the dispensing of the coating material while moving the coating material potential difference dispensing unit in the radial direction of the wafer, the control unit preferably controls the coating material potential difference dispensing unit so that, when moving the coating material potential difference dispensing unit from near the center position to the outer periphery of the wafer, the moving speed of the coating material potential difference dispensing unit is slower toward the outer periphery than toward the center position. Here, when the rotation speed of the turntable unit is constant, as the wafer's radial position moves toward the outer periphery (the rotation radius increases), the circumference of the wafer increases, and therefore the relative movement distance per unit time between the wafer and the coating material potential difference dispensing unit in the circumferential direction increases. Furthermore, when the amount of coating material dispensed from the coating material potential difference dispensing unit per unit time is constant, the greater the movement distance per unit time of the coating material potential difference dispensing unit, the smaller the thickness of the applied coating material. Therefore, if the rotation speed of the turntable is constant and the moving speed of the coating material discharger in the radial direction of the wafer is kept constant, the amount of coating material applied decreases toward the wafer's outer periphery, resulting in a decrease in the thickness of the applied coating material. Therefore, with the above configuration, the moving speed of the coating material discharger slows toward the wafer's outer periphery, so the amount of coating material applied to the wafer can be made constant even if the relative moving distance per unit time between the wafer and the coating material discharger in the circumferential direction increases toward the wafer's outer periphery due to differences in the position of the coating material discharger in the radial direction of the wafer. As a result, the moving speed of the coating material discharger can cause unevenness in the thickness of the coating formed on the wafer surface.

[0016] In the configuration in which the control unit controls the dispensing of the coating material while moving the coating material dispensing unit in the radial direction of the wafer, the control unit preferably controls the rotation speed of the rotating unit to slow down depending on the position of the coating material dispensing unit when dispensing the coating material from the coating material dispensing unit. This configuration slows the movement speed of the coating material dispensing unit toward the outer periphery of the wafer, thereby maintaining a constant amount of coating material applied to the wafer even if the relative movement distance per unit time between the wafer and the coating material dispensing unit in the circumferential direction increases toward the outer periphery of the wafer due to differences in the position of the coating material dispensing unit in the radial direction of the wafer. As a result, the thickness of the coating formed on the wafer surface can be made uneven due to the rotation speed of the turntable unit.

[0017] In the film forming apparatus according to the first aspect, the coating material potential difference discharge unit is preferably disposed above the mounting unit so as to spray the mist of coating material obliquely downward, and the control unit controls the coating material potential difference discharge unit to oscillate in a direction from the center of the wafer toward the outer periphery of the wafer when the coating material potential difference discharge unit sprays the mist of coating material. With this configuration, the mist of coating material is sprayed obliquely downward, which prevents the area where the mist of coating material is sprayed from spreading too much, compared to a configuration in which the mist of coating material is sprayed directly downward. Therefore, within the area where the mist of coating material is sprayed, the area where the coating material is not applied can be reduced. Furthermore, since the mist of coating material is sprayed while the coating material potential difference discharge unit is oscillated in a direction from the center of the wafer toward the outer periphery of the wafer, the mist of coating material is sprayed multiple times within a predetermined area. Therefore, within the area where the mist of coating material is sprayed, the area where the coating material is not applied can be reduced. As a result, in a configuration in which the coating material is applied to the surface of the wafer by spraying the atomized coating material, it is possible to suppress the occurrence of unevenness in the thickness of the coating material.

[0018] In the film forming apparatus according to the first aspect, the film forming apparatus preferably further includes a receiving member having an opening at an upper portion and accommodating the turntable therein, the coating material potential difference discharge unit including a discharge nozzle for discharging the coating material and a potential difference supply unit for applying a potential difference between the wafer and the coating material, the discharge nozzle being disposed inside the opening of the receiving member in the height direction. With this configuration, leakage of the coating material discharged from the discharge nozzle to the outside of the receiving member can be suppressed compared to a configuration in which the discharge nozzle is disposed outside the opening of the receiving member.

[0019] In this case, the potential difference supply unit is preferably positioned higher in the height direction than the opening. Here, the coating material includes an organic solvent such as ethanol, acetonitrile, or toluene. After the coating material is applied to the wafer surface, the organic solvent such as ethanol, acetonitrile, or toluene may volatilize, generating gas. Therefore, with the above configuration, the potential difference supply unit is positioned higher in the height direction than the opening, allowing the potential difference supply unit to be positioned at a sufficient distance from the wafer surface. As a result, even if volatile gas is generated from the coating material, the volatile gas from the coating material can be prevented from filling the area around the potential difference supply unit.

[0020] The film forming apparatus according to the first aspect preferably further includes a cleaning liquid supply unit that supplies a cleaning liquid to the wafer while the turntable is rotating. This configuration allows the turntable to be used for both the process of forming a coating on the wafer surface and the process of cleaning the wafer. As a result, the apparatus configuration can be simplified compared to a configuration in which separate turntables are used for the process of drying the coating material applied to the wafer surface and the process of cleaning the wafer.

[0021] The film forming apparatus according to the first aspect preferably further includes a hot air blower that blows hot air onto the wafer while the turntable is rotating. This configuration allows the turntable to be used for both drying (volatilizing) the solvent contained in the coating material applied to the wafer surface and drying the wafer surface after cleaning. As a result, the apparatus configuration can be simplified compared to a configuration in which separate turntables are used for the drying of the coating material applied to the wafer surface and the drying of the wafer surface after cleaning.

[0022] A laser processing apparatus according to a second aspect of the present invention includes a laser irradiation unit that processes a wafer by irradiating a laser toward an irradiation position, a rotary table unit that includes a mounting unit on which a wafer is placed when a coating process is performed on the laser-processed wafer and a rotating unit that rotates the mounting unit, a coating material potential difference discharge unit that discharges a coating material while applying a potential difference to the wafer placed on the mounting unit, and a control unit that controls the rotation of the rotary table unit and controls the coating material potential difference discharge unit so that the coating material is discharged onto the surface of the wafer while the rotary table unit is rotating.

[0023] As described above, a laser processing apparatus according to a second aspect of the present invention includes a coating material potential difference discharge unit that discharges a coating material while applying a potential difference to a wafer placed on the wafer placement unit, and a control unit that controls the rotation of the turntable and controls the coating material potential difference discharge unit so that the coating material is discharged onto the surface of the wafer while the turntable is rotating. This makes it possible to provide a laser processing apparatus that can improve the material consumption efficiency of the coating material, similar to the film deposition apparatus according to the first aspect.

[0024] According to the present invention, it is possible to provide a film forming apparatus and a laser processing apparatus that can improve the efficiency of material consumption of a coating material.

[0025] 1 is a perspective view of a laser processing apparatus according to a first embodiment; FIG. 2 is a plan view of a wafer before laser processing is performed in the laser processing apparatus according to the first embodiment; FIG. 3 is a block diagram showing the configuration of the laser processing apparatus according to the first embodiment; FIG. 4 is a schematic view showing the configuration of a rotary table and a receiving member provided in the laser processing apparatus according to the first embodiment; FIG. 5 is a plan view for explaining a configuration for moving a coating material potential difference discharge unit, a coating material dripping unit, a cleaning liquid supply unit, and a warm air blowing unit provided in the laser processing apparatus according to the first embodiment; FIG. 6 is a schematic view showing a configuration for a coating material discharged by a coating material potential difference discharge unit provided in the laser processing apparatus according to the first embodiment; FIG. 7 is a schematic view showing a configuration for a coating material discharged by a coating material potential difference discharge unit according to the first embodiment while moving spirally relative to the coating material; FIG. 8 is a schematic view for explaining a configuration for calculating the rotation speed of a rotary table when the coating material potential difference discharge unit according to the first embodiment discharges a coating material onto a wafer, and the radial position of the coating material potential difference discharge unit; FIG. 9 is a schematic view showing a configuration for a coating material discharged by a coating material potential difference discharge unit according to Comparative Example 1 onto a wafer; 1 is a schematic diagram showing a configuration in which a coating material potential difference discharge unit according to Comparative Example 2 discharges a coating material onto a wafer. FIG. 2 is a flowchart showing a process in which a control unit of the laser processing apparatus according to the first embodiment switches a method of discharging a coating material. FIG. 3 is a flowchart showing a process in which a control unit of the laser processing apparatus according to the first embodiment applies a coating material by using a coating material potential difference discharge unit. FIG. 4 is a flowchart showing a process in which a control unit of the laser processing apparatus according to the first embodiment applies a coating material by using a coating material dropping unit. FIG. 5 is a block diagram showing a configuration of a laser processing apparatus according to a second embodiment. FIG. 6 is a schematic diagram showing a configuration in which a coating material potential difference discharge unit provided in the laser processing apparatus according to the second embodiment discharges a coating material. FIG. 7 is a block diagram showing a configuration of a laser processing apparatus according to a first modified example. FIG. 8 is a schematic diagram showing a configuration in which a coating material potential difference discharge unit according to the first modified example discharges a coating material onto a wafer. FIG. 9 is a flowchart showing a process in which a control unit of the laser processing apparatus according to the first modified example applies a coating material by using a coating material potential difference discharge unit. FIG. 10 is a block diagram showing a configuration of a film forming apparatus according to a second modified example.

[0026] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, specific embodiments of the present invention will be described with reference to the accompanying drawings.

[0027] First Embodiment The configuration of a laser processing apparatus 100 according to a first embodiment of the present invention will be described with reference to FIGS.

[0028] 1, the laser processing apparatus 100 is configured to perform ablation processing on the surface of the wafer We in order to divide the wafer We. The laser processing apparatus 100 is disposed in a clean room.

[0029] The laser processing apparatus 100 includes a dicing unit 1, a film forming and cleaning unit 2, a control unit 3 (see FIG. 3), a cassette unit 4, and a wafer transport unit 5. The film forming and cleaning unit 2 is an example of the "film forming apparatus" in the claims.

[0030] Here, the vertical direction is the Z direction, the upward direction is the Z1 direction, and the downward direction is the Z2 direction. The horizontal direction perpendicular to the Z direction is the X direction, one side of the X direction is the X1 direction, and the other side of the X direction is the X2 direction. The horizontal direction perpendicular to the X direction is the Y direction, one side of the Y direction is the Y1 direction, and the other side of the Y direction is the Y2 direction.

[0031] As shown in FIG. 1, the dicing section 1 includes a laser irradiation section 10, a Z-direction moving section 11, a Y-direction moving section 12, an X-direction moving section 13, and a wafer holding section .

[0032] (Laser Irradiation Unit) The laser irradiation unit 10 is configured to process the wafer We by irradiating a laser beam toward an irradiation position. The laser irradiation unit 10 is configured to ablate the wafer We, which has multiple semiconductor chips Ch (see FIG. 2 ), by irradiating the wafer We with a laser beam. Specifically, the laser irradiation unit 10 is configured to irradiate the wafer We with a laser beam along each of multiple streets Ws (see FIG. 2 ) on the wafer We while moving the wafer We relative to the laser irradiation unit 10 using the wafer holder 14. The laser irradiation unit 10 is attached to a Y-direction moving unit 12 via a Z-direction moving unit 11. The Z-direction moving unit 11 is configured to move the laser irradiation unit 10 in each of the Z1 and Z2 directions. The Z-direction moving unit 11 includes, for example, a linear conveyor module or a drive unit having a ball screw and a motor with an encoder. The Z-direction moving unit 11 is attached to the Y-direction moving unit 12. As a result, the Z-direction moving unit 11 is moved in the Y1 direction and the Y2 direction by the Y-direction moving unit 12 .

[0033] The Y-direction moving unit 12 is configured to move the laser irradiation unit 10 in each of the Y1 direction and the Y2 direction via the Z-direction moving unit 11. The Y-direction moving unit 12 has, for example, a linear conveyor module or a drive unit having a ball screw and a motor with an encoder.

[0034] The X-direction moving unit 13 is configured to move the wafer holding unit 14 in each of the X1 and X2 directions. The X-direction moving unit 13 includes, for example, a linear conveyor module or a drive unit having a ball screw and a motor with an encoder. The X-direction moving unit 13 is attached to the Y-direction moving unit 12. This allows the X-direction moving unit 13 to move in the Y1 and Y2 directions by the Y-direction moving unit 12.

[0035] The wafer holding unit 14 is configured to hold the wafer We by suctioning the wafer We attached to the sheet member Wt (see FIG. 2). The wafer holding unit 14 is attached to the X-direction moving unit 13. This allows the wafer holding unit 14 to move in the X1 and X2 directions by the X-direction moving unit 13. The wafer holding unit 14 is configured to rotate about a rotation axis that runs vertically. As a result, the wafer holding unit 14 is configured to be rotatable and movable in each horizontal direction while holding the frame Wf by suction.

[0036] The cassette unit 4 is configured to accommodate a plurality of cassettes each containing a wafer ring structure W, each of which includes a wafer We attached to a sheet member Wt and a frame Wf. The frame Wf is annular. The wafer We is disposed inside the annular frame Wf.

[0037] The cassette unit 4 includes a plurality of cassette placement units 40 , a Z-direction movement mechanism 41 , and a frame holding unit 42 .

[0038] The multiple cassette placement units 40 include one cassette placement unit (not shown) and another cassette placement unit (not shown). A cassette containing a plurality of unprocessed wafers We is placed on one cassette placement unit. The other cassette placement units are each placed on a cassette containing a plurality of processed wafers We. The Z-direction movement mechanism 41 is configured to move the frame holding unit 42 in the Z1 direction or the Z2 direction. The Z-direction movement mechanism 41 includes, for example, a linear conveyor module or a drive unit having a ball screw and an encoder-equipped motor. The frame holding unit 42 is configured to hold the frame Wf. That is, the cassette unit 4 moves the frame holding unit 42 in the Z1 direction using the Z-direction movement mechanism 41, and moves the cassette held on the cassette placement unit 40 to the frame holding unit 42 using the clamp hand unit 50 (described later). The frame holding unit 42 then holds the frame Wf. Thereafter, the frame holding portion 42 holding the frame Wf is moved in the Z2 direction by the Z direction movement mechanism 41, and the frame Wf is placed on the placement portion 20a (see Figure 3) of the film forming cleaning portion 2 described later by the clamp hand portion 50.

[0039] The wafer transport unit 5 is configured to transport the wafer ring structure W between the cassette unit 4 and the dicing unit 1. Specifically, the wafer transport unit 5 has a clamp hand unit 50, a Y-direction movement mechanism 51, a rail unit 52, a rail unit 53, a transfer head unit 54, a transfer head unit 55, a Z-direction movement mechanism 56, and a rail unit 57.

[0040] The clamp hand unit 50 is configured to clamp the frame Wf of the wafer ring structure W and remove it from the cassette unit 4 or store it in the cassette unit 4. The clamp hand unit 50 is also configured to place the wafer ring structure W on the turntable unit 20. The clamp hand unit 50 is moved in the Y1 direction and the Y2 direction by a Y-direction movement mechanism 51. The Y-direction movement mechanism 51 has, for example, a linear conveyor module or a drive unit having a ball screw and a motor with an encoder.

[0041] The clamp hand unit 50 transports the wafer ring structure W removed from the cassette unit 4 to the rail unit 52 using the Y-direction movement mechanism 51. The clamp hand unit 50 transports the wafer ring structure W removed from the cassette unit 4 to the rail unit 53 using the Y-direction movement mechanism 51. The clamp hand unit 50 stores the processed wafer ring structure W placed on the rail unit 53 into the cassette unit 4 using the Y-direction movement mechanism 51.

[0042] Rail portion 52 is configured to support, from the Z2 direction, the wafer ring structure W placed by clamp hand portion 50. Rail portion 53 is configured to support, from the Z2 direction, the wafer ring structure W placed by clamp hand portion 50. Rail portion 52 and rail portion 53 are arranged side by side in this order from the Y2 direction side toward the Y1 direction side.

[0043] Each of the transfer and placement head units 54 and 55 is configured to adsorb the frame Wf of the wafer ring structure W. Each of the transfer and placement head units 54 and 55 is provided with an adsorption unit having suction holes or the like for adsorbing the frame Wf of the wafer ring structure W. The Z-direction movement mechanism 56 is configured to independently move each of the transfer and placement head units 54 and 55 in the Z1 direction or the Z2 direction. The Z-direction movement mechanism 56 has, for example, a linear conveyor module or a drive unit having a ball screw and a motor with an encoder.

[0044] As shown in FIG. 1, the clamp hand unit 50 transfers the wafer ring structure W placed on the rail unit 52 to the rail unit 57 by the Y-direction moving mechanism 51 .

[0045] The rail portions 57 are configured to support the wafer ring structure W placed by the clamp hand unit 50 from the Z2 direction. The wafer ring structure W placed on the rail portions 57 is placed on the placement portion 20a (see FIG. 3) of the turntable unit 20. The wafer ring structure W placed on the rail portions 57 is placed on the placement portion 20a, for example, by moving the rail portions 57 by a drive unit (not shown) with the placement portion 20a positioned below the rail portions 57. The wafer ring structure W placed on the rail portions 57 is placed on the placement portion 20a by moving the placement portion 20a by a movement mechanism (not shown) capable of moving the placement portion 20a in the up and down direction with the placement portion 20a positioned below the rail portions 57. After the wafer ring structure W is placed on the placement portion 20a, the rail portions 57 are retracted to a position where they do not interfere with the receiving member 25, which will be described later.

[0046] As shown in Fig. 3, the control unit 3 is configured to control each of the dicing unit 1, the film forming and cleaning unit 2, the cassette unit 4, and the wafer transport unit 5 in order to process the wafer We (see Fig. 2) in the laser processing apparatus 100. The control unit 3 is also configured to control the turntable unit 20. The control unit 3 is also configured to control the coating material potential difference discharge unit 21 and the coating material dropping unit 22. The control unit 3 is also configured to control the lifting mechanism 24. The control unit 3 is electrically connected to each of the dicing unit 1, the film forming and cleaning unit 2, the cassette unit 4, and the wafer transport unit 5.

[0047] Specifically, the control unit 3 includes a CPU (Central Processing Unit), a storage unit 3a having an HDD (Hard Disk Drive) and the like, and a memory having a ROM (Read Only Memory) and a RAM (Random Access Memory) and the like.

[0048] The memory unit 3a stores a control program for the laser processing apparatus 100, including laser processing of the wafer We. The memory unit 3a also stores discharge method switching information 30. The discharge method switching information 30 is information that associates the type of coating material Fc with the discharge method corresponding to the type of coating material Fc. The discharge method switching information 30 is obtained in advance through experiments and stored in the memory unit 3a. The memory unit 3a also stores in advance mathematical formulas, which will be described later, that the control unit 3 uses when controlling the turntable unit 20 and the coating material potential difference discharge unit 21 to apply the coating material Fc.

[0049] 3, the film forming and cleaning unit 2 includes a turntable unit 20, a coating material potential difference discharge unit 21, a coating material dropping unit 22, an input receiving unit 23, a lifting mechanism 24, a receiving member 25, a cleaning liquid supply unit 26, and a warm air blowing unit 27. The film forming and cleaning unit 2 is a film forming apparatus that performs a film treatment on the wafer We as a pretreatment for the wafer We to be laser processed.

[0050] The turntable unit 20 includes a mounting portion 20a and a rotating portion 20b. The detailed configuration of the turntable unit 20 will be described later.

[0051] The coating material potential difference discharge unit 21 is configured to discharge the coating material Fc (see FIG. 6 ) while applying a potential difference between the wafer We placed on the mounting unit 20 a and the coating material Fc. The coating material potential difference discharge unit 21 includes a discharge nozzle 21 a and a potential difference supply unit 21 b. The coating material potential difference discharge unit 21 also includes a pump (not shown) and a reservoir (not shown) for storing the coating material Fc.

[0052] The coating material Fc is a highly concentrated organic solution in which a resin material is dissolved in an organic solvent such as ethanol, acetonitrile, toluene, etc. The coating material Fc may also be a highly concentrated organic solution in which a water-soluble resin material is dissolved in a solvent such as water.

[0053] The discharge nozzle 21 a discharges the coating material Fc. The potential difference supply unit 21 b applies a potential difference between the wafer We and the coating material Fc. Details of the configuration for discharging the coating material Fc onto the wafer We using the discharge nozzle 21 a and the potential difference supply unit 21 b will be described later.

[0054] The coating material dropping unit 22 is configured to drop the coating material Fc onto the surface of the wafer We placed on the mounting unit 20a. The coating material dropping unit 22 includes a dropping nozzle 22a. The coating material dropping unit 22 also includes a pump (not shown) and a reservoir (not shown) for storing the coating material Fc.

[0055] In the first embodiment, the laser processing apparatus 100 is configured to selectively switch between whether the coating material potential difference discharge unit 21 discharges the coating material Fc while the turntable unit 20 is rotating, or whether the coating material dropping unit 22 drops the coating material Fc at the center position CP of the wafer We. Details of the configuration in which the laser processing apparatus 100 switches between the discharge of the coating material Fc by the coating material potential difference discharge unit 21 and the dripping of the coating material Fc by the coating material dropping unit 22 will be described later.

[0056] The input receiving unit 23 is configured to receive an operator's operation input regarding the type of coating material Fc or the coating formation method. The input receiving unit 23 includes input devices such as a keyboard, a mouse, and a touch panel.

[0057] The lifting mechanism 24 is configured to move the rotary table unit 20 in the up and down direction. The detailed configuration of the lifting mechanism 24 will be described later.

[0058] The receiving member 25 includes a first receiving portion 25 b and a second receiving portion 25 c. The receiving member 25 is a metal member, such as stainless steel whose surface (inner surface) is coated with a fluororesin such as Teflon (registered trademark).

[0059] The cleaning liquid supply unit 26 is configured to supply the cleaning liquid to the wafer We while rotating the turntable unit 20. The cleaning liquid supply unit 26 includes, for example, a nozzle, a pump, and a reservoir that stores the cleaning liquid.

[0060] In the first embodiment, the cleaning liquid is a cleaning liquid for cleaning the wafer We. The cleaning liquid is, for example, pure water.

[0061] The hot air blower 27 is configured to blow hot air onto the wafer We while the turntable 20 is rotating. The hot air blower 27 dries a coating material applied to the surface of the wafer We and dries the surface of the wafer We after cleaning. The hot air blower 27 includes, for example, a fan, a drive unit that drives the fan, and a heating unit that heats the air (clean air).

[0062] (Rotary Table Unit, Receiving Member, and Elevating Mechanism) Next, the configurations of the rotary table unit 20, receiving member 25, and elevating mechanism 24 will be described with reference to Figures 4 and 5. Figure 4 is a cross-sectional view showing a cross section of the rotary table unit 20, receiving member 25, and elevating mechanism 24 taken along the X direction.

[0063] The turntable unit 20 has a mounting portion 20a, a rotating portion 20b, and a holding portion 20c (see FIG. 5).

[0064] The wafer We is placed on the placement part 20a when work is performed on the wafer We. Specifically, the wafer We is placed on the placement part 20a when a coating process is performed on the wafer We. The placement part 20a includes a wafer placement part 120 on which the wafer We is placed. The surface of the wafer placement part 120 facing the Z1 direction is a placement surface 120a on which the wafer We is placed.

[0065] The rotating part 20b rotates the placement part 20a and includes a wafer placement part holder 121 that holds the wafer placement part 120, a driving part 122, a driving force transmission member 123, and a rotating shaft part .

[0066] The rotating unit 20b transmits the driving force generated by the driving unit 122 to the rotating shaft 124 via the driving force transmission member 123, causing the rotating shaft 124 to rotate. The rotating shaft 124 is connected to the wafer placement portion holder 121 and rotates together with the wafer placement portion holder 121. The rotation of the rotating shaft 124 together with the wafer placement portion holder 121 causes the wafer placement portion 120 held by the wafer placement portion holder 121 to rotate. The driving unit 122 is, for example, a motor. The driving force transmission member 123 is, for example, a belt member. The rotating shaft 124 is a cylindrical metal member.

[0067] In the first embodiment, the receiving member 25 has an opening 25a at the top. The receiving member 25 accommodates the turntable 20 therein. The receiving member 25 is disposed so as to surround the sides of the turntable 20.

[0068] 4, the discharge nozzle 21a is disposed inside the opening 25a of the receiving member 25 in the height direction (Z direction). Specifically, the tip 21c of the discharge nozzle 21a is disposed inside the opening 25a.

[0069] The potential difference supplying section 21b is disposed above the opening 25a in the height direction (Z1 direction side).

[0070] The lifting mechanism 24 includes a rotating unit holder 24a and a drive unit 24b. The rotating unit holder 24a holds the rotating unit 20b from below (Z2 direction). The drive unit 24b moves the rotating unit holder 24a in the Z direction. As a result, the lifting mechanism 24 moves the turntable unit 20 in the Z direction. The drive unit 24b includes a ball screw mechanism, a cylinder mechanism, or the like.

[0071] The lifting mechanism 24 is configured to change the relative position between the receiving member 25 and the mounting portion 20a by moving the turntable 20. In the first embodiment, the lifting mechanism 24 is configured to be changeable between a relative position when applying the coating material Fc to the surface of the wafer We and a relative position when cleaning the surface of the wafer We.

[0072] In the first embodiment, the control unit 3 (see FIG. 3) controls the rotation of the turntable 20 and also controls the coating material potential difference discharge unit 21 (see FIG. 3) so that the coating material Fc is discharged onto the surface of the wafer We while the turntable 20 is rotating, thereby forming a coating on the surface of the wafer We. The control unit 3 also controls the cleaning liquid supply unit 26 (see FIG. 3) and the turntable 20 to clean the surface of the wafer We.

[0073] In the first embodiment, the receiving member 25 includes a first receiving portion 25b capable of receiving the coating material Fc and a second receiving portion 25c capable of receiving the cleaning liquid.

[0074] The first receiving portion 25b is provided on the outer periphery of the turntable 20 and is configured to receive the coating material Fc that has flowed to the outer periphery of the mounting portion 20a. As shown in Fig. 4, the first receiving portion 25b is provided closer to the outer periphery of the receiving member 25 than the second receiving portion 25c. The first receiving portion 25b has a first discharge port 125a for discharging the coating material Fc. The first discharge port 125a is connected to a reservoir (not shown), such as a tank, for storing the coating material Fc.

[0075] The coating material Fc is discharged from the first discharge port 125a as shown by the arrow 90a.

[0076] Furthermore, the coating material Fc contains a volatile organic solvent such as ethanol, acetonitrile, or toluene. Therefore, gas may be generated from the coating material Fc when the coating is formed on the wafer We. Therefore, in the first embodiment, in order to exhaust the gas generated from the coating material Fc, the first receiving portion 25b is provided with a first exhaust port 25d located above the first exhaust port 125a, for exhausting the gas generated from the coating material Fc upward.

[0077] The gas generated from the coating material Fc is exhausted from the first exhaust port 25d as shown by the arrow 90b.

[0078] The second receiving portion 25c is provided on the outer periphery of the turntable 20 and is configured to receive the cleaning liquid that has flowed to the outer periphery of the mounting portion 20a. The second receiving portion 25c has a second outlet 125b for discharging the cleaning liquid. The second outlet 125b is connected to the sewer so that the cleaning liquid can be discharged into the sewer.

[0079] The cleaning liquid is discharged from the second outlet 125b as shown by the arrow 91a.

[0080] Furthermore, the gas generated from the coating material Fc may also flow into the second receiving portion 25c. Therefore, in the first embodiment, the second receiving portion 25c is provided with a second exhaust port 25e at a position above the second exhaust port 125b, for exhausting the gas generated from the coating material Fc upward.

[0081] The gas generated from the coating material Fc and flowing into the second receiving portion 25c is exhausted from the second exhaust port 25e as shown by the arrow 91b.

[0082] In the example shown in Figure 4, the receiving member 25 is shown as being divided into multiple members at the positions of the first discharge outlet 125a, the second discharge outlet 125b, etc., but the receiving member 25 is actually a single member.

[0083] As shown in Fig. 5, the holder 20c holds the wafer We (see Fig. 4) on the mounting part 20a by holding the wafer ring structure W. The holders 20c are provided at multiple locations on the mounting surface 120a of the mounting part 20a. In the example shown in Fig. 5, a total of four holders 20c are provided at four locations on the mounting surface 120a.

[0084] 5, the first exhaust port 25d and the second exhaust port 25e are provided at a plurality of locations on the receiving member 25. Specifically, one first exhaust port 25d and one second exhaust port 25e form one set, and the first exhaust port 25d and the ... and the second exhaust port 25e form one set.

[0085] In addition, in the first embodiment, the control unit 3 (see Figure 3) is configured to be able to move the coating material potential difference discharge unit 21, the coating material dropping unit 22, the cleaning liquid supply unit 26, and the hot air blowing unit 27 back and forth within a predetermined range.

[0086] Specifically, the control unit 3 is configured to be able to move the coating material potential difference discharge unit 21 back and forth within an area 80 indicated by a broken line, as indicated by an arrow 92a.

[0087] Specifically, the control unit 3 is configured to be able to move the coating material dropping unit 22 back and forth within an area 81 indicated by a broken line, as shown by an arrow 92b.

[0088] The control unit 3 is also configured to be able to move the cleaning liquid supply unit 26 back and forth within the area 82 indicated by the broken line, as indicated by an arrow 92c.

[0089] The control unit 3 is also configured to be able to move the hot air blower 27 back and forth within the area 83 indicated by the dashed line, as shown by the arrow 92d.

[0090] In a configuration in which the coating material Fc is dropped onto the center position CP of the wafer We by the coating material dropping unit 22 and then coated onto the surface of the wafer We by rotating the turntable unit 20, most of the coating material Fc dropped onto the surface of the wafer We scatters from the surface of the wafer We, and the small amount of coating material Fc remaining forms a coating on the surface of the wafer We. This reduces the material consumption efficiency of the coating material Fc. On the other hand, in a configuration in which the coating material Fc is applied to the wafer We by discharging the coating material Fc while applying a potential difference, the coating material Fc is applied to the application area with a predetermined thickness, so no waste of the coating material Fc occurs. This improves the material consumption efficiency of the coating material Fc. However, depending on the type of coating material Fc, it may not be possible to discharge the coating material Fc while applying a potential difference.

[0091] Therefore, in the first embodiment, the control unit 3 is configured to selectively switch between discharging the coating material Fc by the coating material potential difference discharge unit 21 and dropping the coating material Fc by the coating material dropping unit 22 onto the center position CP of the wafer We while the turntable unit 20 is rotating. Specifically, the control unit 3 selectively switches between discharging the coating material Fc by the coating material potential difference discharge unit 21 and dropping the coating material Fc by the coating material dropping unit 22 based on an input from the input receiving unit 23 (see FIG. 3 ).

[0092] (Application of Coating Material by Coating Material Dropping Unit) The control unit 3 controls the coating material dropping unit 22 to drop a predetermined amount of coating material Fc onto the center position CP of the wafer We. The control unit 3 then controls the turntable unit 20 to rotate the mounting unit 20a at a predetermined rotational speed, and applies the coating material Fc to the surface of the wafer We by centrifugal force. The application of the coating material Fc by the coating material dropping unit 22 is so-called spin coating.

[0093] (Coating of Coating Material by Coating Material Potential Difference Discharge Unit) Next, with reference to FIGS. 6 to 10, a configuration in which the control unit 3 (see FIG. 3) applies the coating material Fc to the surface of the wafer We by using the coating material potential difference discharge unit 21 will be described.

[0094] 6, the coating material potential difference discharge unit 21 discharges the coating material Fc from the discharge nozzle 21a in a state in which the potential difference supply unit 21b supplies a potential difference between the wafer We and the discharge nozzle 21a. Note that, for convenience, the example shown in Fig. 6 illustrates a state in which the potential difference supply unit 21b is connected to the wafer We, but as long as one electrode of the potential difference supply unit 21b is connected to the discharge nozzle 21a, the other electrode may be connected to ground.

[0095] In the first embodiment, the coating material potential difference discharge unit 21 discharges the liquid coating material Fc directly downward and is positioned above the wafer placement unit 20a at a predetermined distance D1 so that the discharged coating material Fc is applied to the wafer We in liquid form. Specifically, the control unit 3 controls the lifting mechanism 24 to raise and lower the turntable unit 20 so that the distance between the wafer We and the discharge nozzle 21a is the predetermined distance D1. For example, if the discharge nozzle 21a has an inner diameter L1 of 100 μm and is positioned at a predetermined distance D1 of 200 μm, and the coating material Fc is discharged under the condition that the potential difference supply unit 21b supplies a potential difference of 7000 V, the width H of the coating material Fc to be applied is 20 μm. The potential difference supplied by the potential difference supply unit 21b, the inner diameter L1 of the discharge nozzle 21a, the length of the predetermined distance D1, and the width H of the coating material Fc are merely examples. The potential difference supplied by the potential difference supplying unit 21b, the size of the inner diameter L1 of the discharge nozzle 21a, and the length of the predetermined distance D1 can each be changed to any value.

[0096] The width H over which the coating material Fc is applied varies depending on the predetermined distance D1 between the wafer We and the discharge nozzle 21 a. In other words, the control unit 3 can change the width H over which the coating material Fc is applied by controlling the lifting mechanism 24 to change the predetermined distance D1 between the wafer We and the discharge nozzle 21 a.

[0097] In addition, in the first embodiment, while the turntable 20 is rotating, the control unit 3 controls the coating material potential difference ejection unit 21 to eject the coating material Fc while moving it in the radial direction of the wafer We from near the center position CP toward the outer peripheral position OP of the wafer We.

[0098] As shown in Fig. 7, the control unit 3 (see Fig. 3) controls the application of the coating material Fc on the surface of the wafer We by moving the turntable unit 20 (see Fig. 3) and the coating material potential difference discharge unit 21 (see Fig. 3) relative to each other in a spiral pattern from near the center position CP toward the outer periphery position OP of the wafer We. Specifically, the control unit 3 applies the coating material Fc by moving the turntable unit 20 and the coating material potential difference discharge unit 21 relative to each other in a spiral pattern along arrow 93. Note that in Fig. 7, the circular region Fr shown by the dashed line represents the region where the coating material Fc is applied. The shape of the region Fr where the coating material Fc is applied may be a shape other than a circle, such as a rectangle.

[0099] Figure 8 is a schematic diagram showing the movement trajectory Ft of the region Fr (see Figure 7) and the width H of the coating material Fc to be applied when the coating material Fc (see Figure 7) is applied to a radial position R2 of a wafer We having a radius R1.

[0100] Here, when the rotation speed of the turntable 20 is constant, as the radial position of the wafer We moves closer to the outer periphery position OP (as the rotation radius increases), the circumferential length of the wafer We increases, and therefore the relative movement distance per unit time between the wafer We and the coating material potential difference discharger 21 in the circumferential direction increases. Furthermore, when the amount of coating material Fc discharged from the coating material potential difference discharger 21 per unit time is constant, the thickness of the applied coating material Fc decreases as the movement distance per unit time of the coating material potential difference discharger 21 increases. Therefore, if the rotation speed of the turntable 20 relative to the radial direction of the wafer We is constant and the movement speed of the coating material potential difference discharger 21 is kept constant, the amount of coating material Fc applied decreases as the wafer We moves closer to the outer periphery position OP, resulting in a decrease in the thickness of the applied coating material Fc.

[0101] Therefore, in the first embodiment, when the coating material potential difference discharger 21 is moved from near the center position CP to the outer periphery position OP of the wafer We, the control unit 3 controls the coating material potential difference discharger 21 so that the moving speed of the coating material potential difference discharger 21 is slower on the outer periphery position OP side than on the center position CP side. Also, in the first embodiment, when the coating material Fc is discharged from the coating material potential difference discharger 21, the control unit 3 controls the rotation speed of the rotation unit 20b to be slower depending on the position of the coating material potential difference discharger 21.

[0102] Specifically, the control unit 3 controls the turntable unit 20 and the coating material potential difference discharge unit 21, and while rotating the turntable unit 20 at a rotational speed shown in the following equation (1), moves the coating material potential difference discharge unit 21 to a position shown in the following equation (2), thereby discharging the coating material Fc. Here, V is the rotational speed when rotating the turntable unit 20 in the circumferential direction. rt is the radial position of the wafer We at which the coating material potential difference discharge unit 21 is located at a given time t. C is a constant. A is expressed by the following equation (3). Here, L ０ is the amount of coating material Fc discharged from the discharge nozzle 21a per unit time. １ is the amount of coating material Fc required to coat a unit area.

[0103] Furthermore, the constant C included in the above formula (2) is a constant for determining the initial position of the discharge nozzle 21a when discharging the coating material Fc. If the constant C is not set appropriately, there will be areas where the coating material Fc is discharged in duplicate or areas where the coating material Fc is not discharged.

[0104] Comparative Example 1 (see FIG. 9 ) illustrates a case where overlapping regions of the coating material Fc (see FIG. 7 ) are generated. In Comparative Example 1, the center position NC1 of the discharge nozzle 221 is aligned with the center position CP of the wafer We (see FIG. 7 ), and then the discharge of the coating material Fc is initiated. In Comparative Example 1, the turntable is rotated, and the coating material potential difference discharge unit is moved spirally relative to the turntable to apply the coating material FC. Specifically, in Comparative Example 1, the discharge nozzle 221 is positioned at the initial position 221a, and then moved, as indicated by arrows 190a to 190d, so that the discharge nozzle 221 passes through second position 221b to fifth position 221e. In this case, the coating material Fc is discharged overlappingly within region 191. Therefore, the thickness of the coating material Fc applied to region 191 is thicker than that of other portions. In Comparative Example 1, for simplicity, the discharge nozzle 221 is illustrated as a rectangle having a width corresponding to the width H of the coating material Fc discharged onto the wafer We.

[0105] Comparative Example 2 (see FIG. 10 ) illustrates a case where an area is created where the coating material Fc (see FIG. 7 ) is not dispensed. In Comparative Example 2, the center position NC2 of the discharge nozzle 222 is shifted from the center position CP of the wafer We (see FIG. 7 ) to set the initial position 222a of the discharge nozzle 222 as the discharge of the coating material Fc. Specifically, the initial position 222a is a position where the center position NC2 of the discharge nozzle 222 is located half the distance H of the discharge width of the coating material Fc from the center position CP. In Comparative Example 2, the coating material FC is applied while the coating material potential difference discharge unit is moved spirally relative to the rotating table while the turntable unit is rotated. Specifically, in Comparative Example 2, the discharge nozzle 222 is positioned at the initial position 222a, and then moved to pass through second position 222b through fifth position 222e, as indicated by arrows 192a through 192d. 10, the coating material Fc is not dispensed into the area 193, resulting in an area where the coating material Fc is not applied. Note that in Comparative Example 2, for simplicity, the discharge nozzle 222 is illustrated as a rectangle having a width corresponding to the width H of the coating material Fc dispensed onto the wafer We.

[0106] In order to avoid the states shown in Comparative Examples 1 and 2, the initial position of the discharge nozzle 21a should be set to a position that satisfies R2 = H / 2 when the discharge nozzle 21a makes one rotation on the surface of the wafer We. Specifically, the initial position of the discharge nozzle 21a should be determined by determining R2 at which t = 0 in the following equation (4).

[0107] In the above formula (4), when R2 at which t=0 is found, the following formula (5) is obtained.

[0108] (Coating Material Discharging Method Switching Process) Next, with reference to FIG. 11, a process in which the control unit 3 (see FIG. 3) switches the method for discharging the coating material Fc (see FIG. 6) will be described.

[0109] In step S1, the control unit 3 receives an operation input from the operator via the input receiving unit 23 (see FIG. 3 ). Specifically, the control unit 3 receives an operation input from the input receiving unit 23 regarding the type of coating material Fc or the coating formation method.

[0110] In step S2, the control unit 3 determines whether the coating material Fc is being dispensed by the coating material potential difference dispenser 21 (see FIG. 3). If an operational input regarding the type of coating material Fc is received in step S1, the control unit 3 acquires a dispense method corresponding to the input coating material Fc based on dispense method switching information 30 (see FIG. 3) stored in the memory unit 3a (see FIG. 3). The control unit 3 then determines whether the dispense method acquired based on the dispense method switching information 30 is dispensed by the coating material potential difference dispenser 21. Furthermore, if an operational input regarding a coating formation method is received in step S1, the control unit 3 determines whether the received coating formation method is a method of dispensing the coating material Fc by the coating material potential difference dispenser 21. If the coating material Fc is being dispensed by the coating material potential difference dispenser 21, the process proceeds to step S3. If the coating material Fc is not being dispensed by the coating material potential difference dispenser 21, the process proceeds to step S4.

[0111] When the process proceeds from step S2 to step S3, in step S3, the control unit 3 controls the turntable unit 20 (see FIG. 3) and the coating material potential difference discharge unit 21 to discharge the coating material Fc from the coating material potential difference discharge unit 21. Then, the process ends.

[0112] Furthermore, when the process proceeds from step S2 to step S4, in step S4, the control unit 3 controls the turntable unit 20 and the coating material dropping unit 22 (see FIG. 3) to drop the coating material Fc from the coating material dropping unit 22. Thereafter, the process ends.

[0113] (Coating material ejection process by coating material potential difference ejection unit) Next, referring to Figure 12, we will explain the process in which the control unit 3 (see Figure 3) controls the turntable unit 20 (see Figure 3) and the coating material potential difference ejection unit 21 (see Figure 3) to eject the coating material Fc (see Figure 6).

[0114] In step S10, the control unit 3 acquires the width H (see FIG. 6) of the coating material Fc to be discharged from the discharge nozzle 21a (see FIG. 6). The width H of the coating material Fc to be discharged from the discharge nozzle 21a can be acquired from the inner diameter L1 (see FIG. 6) of the discharge nozzle 21a and the predetermined distance D1 (see FIG. 6) between the discharge nozzle 21a and the wafer We (see FIG. 6). The inner diameter L1 of the discharge nozzle 21a is known and may be acquired in advance and stored in the memory unit 3a. The control unit 3 may then acquire this value from the memory unit 3a in the process of step S10. The control unit 3 also controls the lifting mechanism 24 (see FIG. 3) to position the wafer We and the discharge nozzle 21a at a predetermined distance D1 apart. Therefore, the predetermined distance D1 is also a known value.

[0115] Next, in step S11, the control unit 3 acquires from the storage unit 3a (see FIG. 3) the formulas used to calculate the rotation speed of the turntable unit 20 and the radial position of the discharge nozzle 21a. Specifically, the control unit 3 acquires the above formulas (1) to (3) and (5) from the storage unit 3a.

[0116] Next, in step S12, the control unit 3 rotates the turntable unit 20 at the rotation speed calculated by the above formulas (1) and (3).

[0117] Next, in step S13, the control unit 3 ejects the coating material Fc while moving the ejection nozzle 21a so that the radial position of the ejection nozzle 21a is calculated based on the above equations (2), (3), and (5).

[0118] Next, in step S14, the control unit 3 determines whether or not the dispensing of the coating material Fc is complete. For example, the control unit 3 determines whether or not the dispensing of the coating material Fc is complete based on whether or not a predetermined amount of the coating material Fc has been dispensed. If the dispensing of the coating material Fc is complete, the process proceeds to step S15. If the dispensing of the coating material Fc is not complete, the process proceeds to step S12.

[0119] When the process proceeds from step S14 to step S15, the control unit 3 stops the discharge of the coating material Fc from the coating material potential difference discharge unit 21 in step S15.

[0120] Next, in step S16, the control unit 3 stops the rotation of the turntable unit 20.

[0121] Next, in step S17, the control unit 3 retracts the discharge nozzle 21a, and then the process ends.

[0122] (Dropping process of coating material by coating material dropping unit) Next, referring to Figure 13, we will explain the process in which the control unit 3 (see Figure 3) controls the rotating table unit 20 (see Figure 3) and the coating material dropping unit 22 (see Figure 3) to drop the coating material Fc from the coating material dropping unit 22.

[0123] In step S20, the control unit 3 controls the coating material dropping unit 22 to move the dropping nozzle 22a (see FIG. 3) to the center position CP (see FIG. 3) of the wafer We (see FIG. 3).

[0124] Next, in step S21, the control unit 3 controls the coating material dropping unit 22 to drop a predetermined amount of coating material Fc onto the surface of the wafer We.

[0125] Next, in step S22, the control unit 3 controls the turntable unit 20 to rotate the turntable unit 20 at a predetermined rotation speed.

[0126] Next, in step S23, the control unit 3 determines whether application of the coating material Fc is complete. The control unit 3 determines whether application of the coating material Fc is complete, for example, based on whether the turntable unit 20 has been rotated for a predetermined time. If application of the coating material Fc is complete, the process proceeds to step S24. If application of the coating material Fc is not complete within the predetermined time, the control unit 3 repeats the process of step S23.

[0127] When the process proceeds from step S23 to step S24, the control unit 3 stops the rotation of the turntable unit 20 in step S24.

[0128] Next, in step S25, the control unit 3 retracts the drip nozzle 22a, and then the process ends.

[0129] (Effects of First Embodiment) In the first embodiment, the following effects can be obtained.

[0130] In the first embodiment, as described above, the film forming and cleaning unit 2 is a film forming apparatus that performs a coating process on a wafer We as a pretreatment for the wafer We to be laser-machined, and includes a turntable unit 20 including a mounting unit 20a on which the wafer We is mounted when the coating process is performed on the wafer We and a rotation unit 20b that rotates the mounting unit 20a, a coating material potential difference discharge unit 21 that discharges the coating material Fc while applying a potential difference between the wafer We mounted on the mounting unit 20a and the coating material Fc, and a control unit 3 that controls the rotation of the turntable unit 20 and controls the coating material potential difference discharge unit 21 so that the coating material Fc is dispensed onto the surface of the wafer We while the turntable unit 20 is rotating. As a result, the coating material Fc is applied to the wafer We by dispensing it while applying a potential difference, so that the coating material Fc is applied to the area to be coated with a predetermined thickness, and therefore no waste of the coating material Fc occurs. Therefore, when forming a coating on the wafer We using the coating material Fc that can be discharged under a potential difference, waste of the coating material Fc can be reduced, thereby improving the material consumption efficiency of the coating material Fc.

[0131] Furthermore, in the first embodiment, as described above, the coating material potential difference discharger 21 discharges the liquid coating material Fc directly downward and is positioned above the mounting unit 20a at a predetermined distance D1 from the mounting unit 20a, allowing the discharged coating material Fc to be applied to the wafer We in liquid form. This allows the coating material Fc discharged from the coating material potential difference discharger 21 to be applied to the wafer We in liquid form before it is atomized by the potential difference. Therefore, compared to a configuration in which atomized coating material Fc is applied to the wafer We, unevenness in the thickness of the coating formed on the surface of the wafer We can be reduced. As a result, the material consumption efficiency of the coating material Fc can be improved while unevenness in the thickness of the coating formed on the surface of the wafer We can be reduced.

[0132] Furthermore, as described above, the first embodiment further includes a coating material dropping unit 22 that drops the coating material Fc onto the surface of the wafer We placed on the mounting unit 20a. The control unit 3 selectively switches between whether the coating material potential difference dispensing unit 21 dispenses the coating material Fc while the turntable unit 20 is rotating, or whether the coating material dropping unit 22 drops the coating material Fc at the center of the wafer We. This allows the coating material Fc to be applied to the wafer We even if it is a type of coating material Fc that cannot be dispensed under a potential difference by switching to a dropping method that offers a wide range of coating material Fc (resin) options (high versatility). As a result, a highly versatile film forming and cleaning unit 2 can be provided that can form a coating regardless of the type of coating material Fc.

[0133] Furthermore, as described above, the first embodiment further includes an input receiving unit 23 that receives an operator's operation input regarding the type of coating material Fc or the coating formation method, and the control unit 3 selectively switches between discharging the coating material Fc by the coating material potential difference discharge unit 21 and dripping the coating material Fc by the coating material dropping unit 22 based on the input via the input receiving unit 23. This allows the operator to input the type of coating material Fc or the coating formation method, thereby controlling the coating material potential difference discharge unit 21 to discharge the coating material Fc or the coating material dropping unit 22 to drip the coating material Fc in accordance with the input. As a result, it is possible to easily switch between discharging the coating material Fc by the coating material potential difference discharge unit 21 and dripping the coating material Fc by the coating material dropping unit 22, thereby improving convenience (usability) for the operator.

[0134] Furthermore, in the first embodiment, as described above, the control unit 3 controls the dispensing of the coating material Fc while moving the coating material potential difference discharge unit 21 in the radial direction of the wafer We from near the center position CP toward the outer periphery position OP of the wafer We while the turntable unit 20 is rotating. This allows the rotation of the turntable unit 20 and the movement of the coating material potential difference discharge unit 21 to apply the coating material Fc onto the surface of the wafer We without any gaps.

[0135] Furthermore, in the first embodiment, as described above, the control unit 3 controls the coating material Fc to be applied to the surface of the wafer We while moving the turntable unit 20 and the coating material potential difference discharge unit 21 relative to each other in a spiral pattern from near the center position CP toward the outer periphery position OP of the wafer We. Here, in a configuration in which the coating material Fc is applied around the circumference of the wafer We at a predetermined width, it is necessary to move the coating material potential difference discharge unit 21 in the radial direction of the wafer We when moving to the next circumference. At this time, overlapping coatings of the coating material Fc occur at a position where the movement of the coating material potential difference discharge unit 21 relative to the radial direction of the wafer We switches from the movement of the coating material potential difference discharge unit 21 relative to the circumferential direction of the wafer We. Therefore, with the above-described configuration, the coating material Fc can be applied while moving the turntable unit 20 and the coating material potential difference discharge unit 21 relative to each other in a spiral pattern, thereby preventing the occurrence of overlapping coatings of the coating material Fc. As a result, it is possible to prevent the thickness of the coating material Fc from becoming uneven on the surface of the wafer We.

[0136] Furthermore, as described above, the first embodiment further includes an elevation mechanism 24 that moves the turntable 20 up and down, the coating material potential difference discharge unit 21 includes a discharge nozzle 21a that discharges the coating material Fc, and the control unit 3 controls the elevation mechanism 24 to raise and lower the turntable 20 so that the distance between the wafer We and the discharge nozzle 21a is the predetermined distance D1. This makes it possible to easily position the discharge nozzle 21a at a distance that allows the coating material Fc discharged from the coating material potential difference discharge unit 21 to be applied in liquid form without becoming mist. As a result, the coating material Fc discharged from the potential difference discharge unit can be applied to the wafer We in liquid form.

[0137] Furthermore, in the first embodiment, as described above, when the control unit 3 moves the coating material potential difference discharger 21 from near the center position CP to the outer peripheral position OP of the wafer We, the control unit 3 controls the coating material potential difference discharger 21 so that the moving speed of the coating material potential difference discharger 21 is slower toward the outer peripheral position OP than toward the center position CP. This slows the moving speed of the coating material potential difference discharger 21 toward the outer peripheral position OP of the wafer We. Therefore, even if the relative moving distance per unit time between the wafer We and the coating material potential difference discharger 21 in the circumferential direction increases toward the outer peripheral position OP of the wafer We due to differences in the position of the coating material potential difference discharger 21 in the radial direction of the wafer We, the amount of coating material Fc applied to the wafer We can be kept constant. As a result, unevenness in the thickness of the coating film formed on the surface of the wafer We caused by the moving speed of the coating material potential difference discharger 21 can be suppressed.

[0138] Furthermore, in the first embodiment, as described above, when the coating material Fc is dispensed from the coating material potential difference dispenser 21, the control unit 3 controls the rotation speed of the rotating unit 20b to slow down depending on the position of the coating material potential difference dispenser 21. As a result, the movement speed of the coating material potential difference dispenser 21 slows down as the wafer We approaches the outer periphery position OP. This makes it possible to maintain a constant amount of coating material Fc applied to the wafer We even if the relative movement distance per unit time between the wafer We and the coating material potential difference dispenser 21 in the circumferential direction increases as the wafer We approaches the outer periphery position OP due to differences in the position of the coating material potential difference dispenser 21 in the radial direction of the wafer We. As a result, it is possible to prevent unevenness in the thickness of the coating film formed on the surface of the wafer We from occurring due to the rotation speed of the turntable unit 20.

[0139] Furthermore, as described above, the first embodiment further includes a receiving member 25 having an opening 25a at the top and accommodating the turntable 20 therein, and the coating material potential difference discharge unit 21 includes a discharge nozzle 21a that discharges the coating material Fc and a potential difference supply unit 21b that applies a potential difference between the wafer We and the coating material Fc, and the discharge nozzle 21a is disposed inside the opening 25a of the receiving member 25 in the height direction. This makes it possible to prevent the coating material Fc discharged from the discharge nozzle 21a from leaking out of the receiving member 25, compared to a configuration in which the discharge nozzle 21a is disposed outside the opening 25a of the receiving unit.

[0140] Furthermore, in the first embodiment, as described above, the potential difference supply unit 21b is disposed above the opening 25a in the height direction. Here, the coating material Fc includes an organic solvent such as ethanol, acetonitrile, or toluene. After the coating material Fc is applied to the surface of the wafer We, the organic solvent may volatilize, generating gas. Therefore, with the above-described configuration, the potential difference supply unit 21b is disposed above the opening 25a in the height direction, allowing the potential difference supply unit 21b to be positioned at a sufficient distance from the surface of the wafer We. As a result, even if volatile gas is generated from the coating material Fc, the volatile gas from the coating material Fc can be prevented from filling the area around the potential difference supply unit 21b.

[0141] Furthermore, as described above, the first embodiment further includes a cleaning liquid supply unit 26 that supplies a cleaning liquid to the wafer We while the turntable unit 20 is rotating. This allows the turntable unit 20 to be used for both the process of drying (volatilizing) the solvent contained in the coating material applied to the surface of the wafer We and the process of cleaning the wafer We. As a result, the device configuration can be simplified compared to a configuration in which separate turntable units 20 are used for the process of forming a coating on the surface of the wafer We and the process of cleaning the wafer We.

[0142] Furthermore, as described above, the first embodiment further includes a hot air blower 27 that blows hot air onto the wafer We while the turntable 20 is rotating. This allows the turntable 20 to be used for both the process of drying (volatilizing) the solvent contained in the coating material applied to the surface of the wafer We and the process of drying the surface of the wafer We after cleaning. As a result, the device configuration can be simplified compared to a configuration in which separate turntables 20 are used for the process of drying the coating material applied to the surface of the wafer We and the process of drying the surface of the wafer We after cleaning.

[0143] In the first embodiment, as described above, the laser processing apparatus 100 includes the laser irradiation unit 10 that processes the wafer We by irradiating the laser toward the irradiation position, the turntable unit 20 including the mounting unit 20a on which the wafer We is placed when a coating process is performed on the wafer We to be laser-processed and the rotation unit 20b that rotates the mounting unit 20a, the coating material potential difference discharge unit 21 that applies a potential difference to the wafer We placed on the mounting unit 20a and discharges the coating material Fc onto the surface of the wafer We, and the control unit 3 that controls the rotation of the turntable unit 20 and controls the coating material potential difference discharge unit 21 so that the coating material Fc is discharged onto the surface of the wafer We while the turntable unit 20 is rotating. This makes it possible to provide a laser processing apparatus 100 that can improve the material consumption efficiency of the coating material Fc, similar to the film forming and cleaning unit 2 described above.

[0144] 14 and 15, a laser processing apparatus 200 according to a second embodiment and a film forming and cleaning unit 201 provided in the laser processing apparatus 200 will be described. Note that the same components as those in the laser processing apparatus 100 according to the first embodiment are denoted by the same reference numerals, and detailed description thereof will be omitted.

[0145] Unlike the configuration of the first embodiment described above, in which liquid coating material Fc is discharged from the coating material potential difference discharge section 21, the film forming and cleaning section 201 provided in the laser processing apparatus 200 according to the second embodiment sprays mist-like coating material Fc from the coating material potential difference discharge section 203.

[0146] 14, a laser processing apparatus 200 according to the second embodiment includes a film forming and cleaning unit 201 and a control unit 202. The film forming and cleaning unit 201 has a coating material potential difference discharge unit 203. The control unit 202 controls the film forming and cleaning unit 201. The coating material potential difference discharge unit 203 has a discharge nozzle 203a.

[0147] As shown in FIG. 15, the coating material potential difference discharger 203 according to the second embodiment differs from the coating material potential difference discharger 21 according to the first embodiment in that it sprays atomized coating material Fc onto the surface of the wafer We.

[0148] In the second embodiment, the coating material potential difference discharge unit 203 is disposed above the mounting unit 20a (see FIG. 14) so ​​as to spray the mist of coating material Fc. Specifically, the coating material potential difference discharge unit 203 is disposed so that the distance from the discharge nozzle 203a to the surface of the wafer We is a predetermined distance D2. Note that the predetermined distance D2 is longer than the predetermined distance D1 (see FIG. 6) in the first embodiment.

[0149] The potential difference supplying unit 21b of the coating material potential difference discharge unit 203 according to the second embodiment has a configuration similar to that of the potential difference supplying unit 21b of the coating material potential difference discharge unit 21 according to the first embodiment. That is, in the second embodiment, the coating material potential difference discharge unit 203 discharges the coating material Fc to which a potential difference has been applied from a position separated by a predetermined distance D2, which is longer than the predetermined distance D1, so that the discharged coating material Fc turns into a mist in the air and is applied to the surface of the wafer We.

[0150] The coating material potential difference discharge unit 203 according to the second embodiment is disposed so that the mist of coating material Fc is sprayed obliquely downward. Specifically, the coating material potential difference discharge unit 203 according to the second embodiment is disposed so that the discharge nozzle 203 a faces obliquely so that the mist of coating material Fc is sprayed in the direction along the arrow 94 a.

[0151] In the second embodiment, when the coating material potential difference discharger 203 sprays the mist of coating material Fc, the control unit 202 controls the coating material potential difference discharger 203 to oscillate in a direction from the center position CP of the wafer We toward the outer periphery position OP of the wafer We. Specifically, the control unit 202 controls the coating material potential difference discharger 203 so that the discharge nozzle 203 a oscillates in the direction along the arrow 94 b.

[0152] The other configurations of the laser processing apparatus 200 and the film forming and cleaning unit 201 according to the second embodiment are similar to the configurations of the laser processing apparatus 100 and the film forming and cleaning unit 2 according to the first embodiment.

[0153] (Effects of Second Embodiment) In the second embodiment, the following effects can be obtained.

[0154] In the second embodiment, as described above, the coating material potential difference discharger 21 is disposed above the mounting portion 20 a so that the mist of coating material Fc is sprayed obliquely downward. The control unit 3 controls the coating material potential difference discharger 21 to oscillate in a direction from the center position CP of the wafer We toward the outer periphery position OP of the wafer We when the coating material potential difference discharger 21 sprays the mist of coating material Fc. This configuration sprays the mist of coating material Fc obliquely downward, which prevents the area sprayed with the mist of coating material Fc from spreading too much, compared to a configuration in which the mist of coating material Fc is sprayed directly downward. Therefore, within the area sprayed with the mist of coating material Fc, the area not coated with the coating material Fc can be reduced. Furthermore, since the mist of coating material Fc is sprayed while the coating material potential difference discharger 21 is oscillated in a direction from the center position CP of the wafer We toward the outer periphery position OP of the wafer We, the mist of coating material Fc is sprayed multiple times within a predetermined area. Therefore, the area where the coating material Fc is not applied can be reduced within the area where the mist coating material Fc is sprayed, and as a result, in a configuration in which the coating material Fc is applied to the surface of the wafer We by spraying the mist coating material Fc, it is possible to prevent unevenness in the thickness of the coating material Fc.

[0155] Other effects of the second embodiment are similar to those of the first embodiment.

[0156] [Modifications] The embodiments disclosed herein should be considered to be illustrative in all respects and not restrictive. The scope of the present invention is defined by the claims, not by the description of the above-mentioned embodiments, and further includes all modifications (modifications) within the meaning and scope of the claims.

[0157] For example, in the first and second embodiments, the control unit 3 (control unit 202) controls the discharge of the coating material Fc while moving the turntable unit 20 and the coating material potential difference discharge unit 21 (coating material potential difference discharge unit 203) relative to each other in a spiral shape, but the present invention is not limited to this. For example, as with the control unit 301 provided in the laser processing apparatus 300 according to the first modified example shown in FIG. 16 , the control unit 301 may control the discharge of the coating material potential difference discharge unit 21 to move one rotation at a time in the circumferential direction of the wafer We.

[0158] The laser processing apparatus 300 according to the first comparative example differs from the laser processing apparatus 100 and the laser processing apparatus 200 according to the first and second embodiments in that it includes a control unit 301 instead of the control units 3 and 202.

[0159] 17, the control unit 301 according to the first modified example discharges the coating material Fc while rotating the wafer We in the circumferential direction along the arrow 95, and then moves the discharge nozzle 21a in the radial direction of the wafer We as shown by the arrow 96. Then, the control unit 301 again controls the discharge of the coating material Fc while rotating the wafer We in the circumferential direction.

[0160] The control unit 301 repeats the same process to apply the coating material Fc to the surface of the wafer We. Note that dashed lines 97 shown in Fig. 17 indicate positions through which the region Fr passes when the coating material Fc is dispensed in the circumferential direction of the wafer We at predetermined positions in the radial direction of the wafer We.

[0161] The control unit 301 controls the rotation speed of the turntable unit 20 and the radial position of the coating material potential difference discharge unit 21 when the wafer We makes one rotation in the circumferential direction using the following equations (6) and (7). Here, R is the initial position of the coating material potential difference discharge part 21 (discharge nozzle 21a).

[0162] Then, the control unit 301 ejects the coating material Fc by the coating material potential difference ejection unit 21 until the wafer We rotates once in the circumferential direction, and then sets the initial position of the ejection nozzle 21a for the next rotation using the following equation (8).

[0163] The control unit 301 controls the turntable unit 20 and the coating material potential difference discharge unit 21 according to the above equations (6) to (8) until the coating material Fc is applied to the entire surface of the wafer We.

[0164] Next, referring to Fig. 18, a process in which the control unit 301 (see Fig. 16) according to the first modified example controls the coating material potential difference discharge unit 21 (see Fig. 16) to discharge the coating material Fc (see Fig. 17) will be described. Note that processes similar to those performed by the control unit 3 according to the first embodiment are denoted by the same reference numerals, and detailed description thereof will be omitted.

[0165] In step S30, the radius R1 (see FIG. 8) of the wafer We (see FIG. 8) and the width H (see FIG. 8) of the coating material Fc discharged from the discharge nozzle 21a are obtained. The radius R1 of the wafer We is known. Therefore, the radius R1 of the wafer We is stored in advance in the memory unit 3a (see FIG. 16), and in the process of step S30, the control unit 3 obtains the radius R1 of the wafer We stored in the memory unit 3a.

[0166] Next, in step S31, the control unit 301 acquires from the storage unit 3 a formulas for calculating the rotation speed of the turntable unit 20 and the initial position of the discharge nozzle 21 a. Specifically, the control unit 301 acquires the above formulas (6) and (7) from the storage unit 3 a.

[0167] Next, in step S32, the control unit 301 moves the discharge nozzle 21a to the initial position calculated based on the above formula (6).

[0168] Next, in step S33, the control unit 301 causes the coating material potential difference discharge unit 21 to discharge the coating material Fc while rotating the turntable unit 20 at the rotation speed calculated based on the above formula (7).

[0169] Next, in step S34, the control unit 301 determines whether the wafer We has made one revolution. If the wafer We has made one revolution, the process proceeds to step S35. If the wafer We has not made one revolution, the control unit 301 proceeds to step S33.

[0170] When the process proceeds from step S34 to step S35, the control unit 301 changes the initial position of the discharge nozzle 21 a in step S35. Specifically, the control unit 301 changes the initial position of the discharge nozzle 21 a for the next rotation based on the above formula (8).

[0171] Next, in step S36, the control unit 301 determines whether or not application of the coating material Fc is complete. Specifically, the control unit 301 determines that application of the coating material Fc is complete when the relationship of the following equation (9) is satisfied. If application of the coating material Fc is complete, the process proceeds to steps S15 to S17 and then ends. If application of the coating material Fc is not complete, the process proceeds to step S33.

[0172] The other configurations of the laser processing apparatus 300 according to the first modified example are similar to those of the laser processing apparatus 100 and the laser processing apparatus 200 according to the first and second embodiments.

[0173] The laser processing apparatus 300 according to the first modified example can also provide a laser processing apparatus 300 that can improve the material consumption efficiency of the coating material Fc, similar to the laser processing apparatus 100 and laser processing apparatus 200 according to the first and second embodiments described above.

[0174] Furthermore, in the above-described first and second embodiments, an example in which the present invention is applied to the laser processing apparatus 100 (laser processing apparatus 200) has been shown, but the present invention is not limited thereto. The present invention may also be applied to a film forming apparatus 400 according to a second modified example shown in FIG. 19 . That is, as in the above-described first and second embodiments, the laser processing apparatus 100 (laser processing apparatus 200) and the film forming and cleaning unit 2 (film forming and cleaning unit 201) may be integrally formed, or as in the second modified example, the laser processing apparatus 100 (laser processing apparatus 200) and the film forming apparatus 400 may be arranged separately.

[0175] The film forming apparatus 400 according to the second modification includes a turntable unit 20 including a mounting unit 20a on which the wafer We (see FIG. 1) is mounted when processing the wafer We, and a rotation unit 20b that rotates the mounting unit 20a. The film forming apparatus 400 also includes a coating material potential difference discharge unit 21 that applies a potential difference to the wafer We mounted on the mounting unit 20a and discharges a coating material Fc. The film forming apparatus 400 also includes a coating material dropping unit 22 that drops the coating material Fc onto the surface of the wafer We mounted on the mounting unit 20a. The film forming apparatus 400 is configured to be selectively switched between the coating material potential difference discharge unit 21 discharging the coating material Fc and the coating material dropping unit 22 dropping the coating material Fc onto the center position CP of the wafer We while the turntable unit 20 is rotating. Specifically, the film forming apparatus 400 includes an input receiving unit 23 that receives an operator's operational input regarding the type of coating material Fc or the coating formation method, and a control unit 401 that controls the coating material potential difference discharge unit 21 and the coating material dropping unit 22. Based on the input from the input receiving unit 23, the control unit 401 selectively switches between discharging the coating material Fc by the coating material potential difference discharge unit 21 and dropping the coating material Fc by the coating material dropping unit 22.

[0176] With the above-described configuration, the film forming apparatus 400 according to the second modified example can provide a film forming apparatus 400 that can improve the material consumption efficiency of the coating material Fc, similar to the laser processing apparatus 100 (laser processing apparatus 200) according to the first and second embodiments.

[0177] Furthermore, in the first and second embodiments, an example of a configuration in which the film forming and cleaning unit 2 (film forming and cleaning unit 201) includes the coating material potential difference discharge unit 21 and the coating material dropping unit 22 was described, but the present invention is not limited to this. In the present invention, the film forming and cleaning unit does not need to include a coating material dropping unit. In this case, the control unit does not need to be configured to selectively switch between whether the coating material potential difference discharge unit dispenses the coating material while the turntable unit is rotating, or whether the coating material dropping unit drops the coating material at the center position of the wafer. However, if the film forming and cleaning unit does not include a coating material dropping unit, it will be difficult to form a coating for a type of coating material that cannot be dispensed under an applied potential difference. Therefore, it is preferable that the film forming and cleaning unit include both the coating material potential difference discharge unit and the coating material dropping unit.

[0178] In the first and second embodiments, the input receiving unit 23 receives an input from the operator regarding the type of coating material Fc or the coating formation method, but the present invention is not limited to this. In the present invention, the input receiving unit may be configured to receive input of information that can identify the type of coating material, such as the name of the coating material.

[0179] In the first and second embodiments, the control unit 3 (control unit 202) controls the coating material potential difference discharge unit 21 (coating material potential difference discharge unit 203) to discharge the coating material Fc while moving the coating material potential difference discharge unit 21 (coating material potential difference discharge unit 203) from near the center position CP toward the outer periphery position OP of the wafer We, but the present invention is not limited to this. In the present invention, the control unit may be configured to control the coating material potential difference discharge unit to discharge the coating material while moving the coating material potential difference discharge unit from the outer periphery position toward the center position of the wafer.

[0180] In the first and second embodiments, the control unit 3 (control unit 202) controls the coating material potential difference discharge unit 21 (coating material potential difference discharge unit 203) so that the speed of the discharge unit 21 (coating material potential difference discharge unit 203) is slower toward the outer periphery OP than toward the center position CP when the discharge unit 21 (coating material potential difference discharge unit 203) moves from near the center position CP to the outer periphery OP of the wafer We. However, the present invention is not limited to this configuration. In the present invention, the control unit does not need to slow the speed of the discharge unit when moving the discharge unit from near the center position to the outer periphery of the wafer. However, if the control unit does not slow the speed of the discharge unit when moving the discharge unit from near the center position to the outer periphery of the wafer, unevenness in the thickness of the coating material applied to the wafer will occur due to the speed of the discharge unit. Therefore, when the control unit moves the coating material potential difference discharge unit from near the central position to the outer peripheral position of the wafer, it is preferable that the control unit controls the coating material potential difference discharge unit so that the movement speed of the coating material potential difference discharge unit is slower on the outer peripheral position side than on the central position side.

[0181] Furthermore, in the first and second embodiments, the control unit 3 (control unit 202) controls the rotation speed of the rotation unit 20b to slow down depending on the position of the coating material potential difference discharge unit 21 (coating material potential difference discharge unit 203) when discharging the coating material Fc from the coating material potential difference discharge unit 21 (coating material potential difference discharge unit 203). However, the present invention is not limited to this configuration. In the present invention, the control unit does not need to slow down the rotation speed of the rotation unit depending on the position of the coating material potential difference discharge unit when discharging the coating material from the coating material potential difference discharge unit. However, if the control unit does not slow down the rotation speed of the rotation unit depending on the position of the coating material potential difference discharge unit when discharging the coating material from the coating material potential difference discharge unit, unevenness in the thickness of the coating material applied to the wafer will occur due to the rotation speed of the turntable. Therefore, it is preferable that the control unit slow down the rotation speed of the rotation unit depending on the position of the coating material potential difference discharge unit when discharging the coating material from the coating material potential difference discharge unit.

[0182] In the first and second embodiments, the film forming and cleaning unit 2 (film forming and cleaning unit 201) has an opening 25a at the top and includes a receiving member 25 that houses the rotary table 20 therein. However, the present invention is not limited to this. In the present invention, the laser processing device does not need to include a receiving member. However, if the laser processing device does not include a receiving member, the coating material will scatter around the rotary table. Therefore, it is preferable that the laser processing device include a receiving member.

[0183] Furthermore, in the first and second embodiments, an example of a configuration in which the potential difference supply unit 21b is disposed above the opening 25a in the height direction has been described, but the present invention is not limited to this. In the present invention, the potential difference supply unit may be disposed inside the opening in the height direction. However, if the potential difference supply unit is disposed inside the opening in the height direction, volatile gas generated from the coating material may fill the area around the potential difference supply unit. Therefore, it is preferable that the potential difference supply unit be disposed above the opening in the height direction.

[0184] Furthermore, in the first and second embodiments described above, an example of a configuration including a cleaning liquid supply unit 26 that supplies cleaning liquid to the wafer We while the turntable unit 20 is rotating is shown, but the present invention is not limited to this. In the present invention, the laser processing apparatus does not necessarily have to include a cleaning liquid supply unit. However, if the laser processing apparatus does not include a cleaning liquid supply unit, the turntable unit cannot be used for cleaning the wafer surface, which would result in a more complex apparatus configuration and an increased size of the apparatus. Therefore, it is preferable that the laser processing apparatus include a warm air blower unit.

[0185] Furthermore, in the first and second embodiments described above, an example was shown in which the film forming and cleaning unit 2 (film forming and cleaning unit 201) was configured to include a hot air blower 27 that blows hot air onto the wafer We while the turntable 20 is rotating. However, the present invention is not limited to this. In the present invention, the laser processing apparatus does not need to include a hot air blower. However, if the laser processing apparatus does not include a hot air blower, the time required for drying the coating material applied to the surface of the wafer and for drying the surface of the wafer after cleaning increases. Therefore, it is preferable that the laser processing apparatus include a hot air blower.

[0186] In the first and second embodiments, the lifting mechanism 24 moves the turntable 20 up and down, and the control unit 3 (control unit 202) controls the lifting mechanism 24 to raise and lower the turntable 20 so that the distance between the wafer We and the discharge nozzle 21a becomes the predetermined distance D1. However, the present invention is not limited to this. In the present invention, the lifting mechanism may be configured to raise and lower the coating material potential difference discharge unit, and the control unit may control the lifting mechanism to raise and lower the coating material potential difference discharge unit so that the distance between the wafer and the discharge nozzle becomes the predetermined distance.

[0187] In the first and second embodiments, for convenience of explanation, the control processing of the control unit 3 (control unit 202) is described using a flow-driven flowchart in which processing is performed sequentially according to a processing flow, but the present invention is not limited to this. In the present invention, the control processing of the control unit may be performed by event-driven processing in which processing is performed on an event-by-event basis. In this case, the control processing may be performed completely event-driven, or may be performed in a combination of event-driven and flow-driven processing.

[0188] 2, 201 Film forming and cleaning section (film forming apparatus) 3, 202, 301, 401 Control section 10 Laser irradiation section 20 Rotary table section 20a Placement section 20b Rotation section 21 Coating material potential difference discharge section 21a, 203a Discharge nozzle 21b Potential difference supply section 22 Coating material dropping section 23 Input reception section 24 Elevation mechanism 25 Receiving member 25a Opening (opening of receiving member) 26 Cleaning liquid supply section 27 Warm air blowing section 100, 200, 300 Laser processing apparatus 400 Film forming apparatus CP Center position (center position of wafer) D1 Predetermined distance Fc Coating material OP Outer periphery position (outer periphery position of wafer) We Wafer

Claims

1. A film formation apparatus for performing a coating process on a wafer as a pre-processing for the wafer to be laser processed, comprising: a rotary table section including a mounting section on which the wafer is placed when the wafer is subjected to the coating process, and a rotating section for rotating the mounting section; a coating material potential difference discharge section that discharges the coating material while applying a potential difference between the wafer placed on the mounting section and the coating material; and a control section that controls the rotation of the rotary table section and controls the coating material potential difference discharge section so that the coating material is discharged onto the surface of the wafer while the rotary table section is rotating.

2. The film forming apparatus of claim 1, wherein the coating material potential difference discharge unit discharges the liquid coating material directly downward and is positioned above the mounting unit at a predetermined distance so that the discharged coating material remains liquid and is applied to the wafer.

3. The film forming apparatus according to claim 1, further comprising a coating material dropping unit that drops a coating material onto the surface of the wafer placed on the mounting unit, wherein the control unit selectively controls whether the coating material potential difference ejection unit ejects the coating material while the turntable unit is rotating, or whether the coating material dropping unit drops the coating material at the center position of the wafer.

4. The film forming apparatus according to claim 3, further comprising an input receiving unit that receives operational input from an operator regarding the type of coating material or the method of forming the coating, and the control unit selectively controls whether the coating material is discharged by the coating material potential difference discharge unit or the coating material is dropped by the coating material dropping unit based on the input from the input receiving unit.

5. The film forming apparatus of claim 4, wherein the control unit controls the coating material potential difference discharge unit to discharge the coating material while moving the coating material potential difference discharge unit in the radial direction of the wafer from near the center position toward the outer periphery of the wafer while the turntable unit is rotating.

6. The film forming apparatus of claim 5, wherein the control unit controls the application of the coating material on the surface of the wafer by moving the rotating table unit and the coating material potential difference discharge unit relative to each other in a spiral pattern from near the center position toward the outer periphery of the wafer.

7. The film forming apparatus of claim 2, further comprising an elevation mechanism for moving the rotary table section in an up and down direction, wherein the coating material potential difference discharge section includes a discharge nozzle for discharging the coating material, and wherein the control section controls the elevation mechanism to raise and lower the rotary table section so that the distance between the wafer and the discharge nozzle becomes the predetermined distance.

8. The film forming apparatus of claim 5, wherein the control unit controls the coating material potential difference discharge unit so that, when moving the coating material potential difference discharge unit from near the central position to the outer peripheral position of the wafer, the moving speed of the coating material potential difference discharge unit is slower on the outer peripheral position side than on the central position side.

9. The film forming apparatus according to claim 5, wherein the control unit controls the rotation speed of the rotating unit to slow down depending on the position of the coating material potential difference discharge unit when discharging the coating material from the coating material potential difference discharge unit.

10. The film forming apparatus of claim 1, wherein the coating material potential difference discharge unit is disposed above the placement unit so that the mist of coating material is sprayed obliquely downward, and the control unit controls the coating material potential difference discharge unit to oscillate in a direction from the center position of the wafer toward the outer periphery position of the wafer when the coating material potential difference discharge unit sprays the mist of coating material.

11. The film forming apparatus according to claim 1, further comprising a receiving member having an opening at the top and accommodating the rotary table portion therein, wherein the coating material potential difference discharge portion includes a discharge nozzle that discharges the coating material and a potential difference supply portion that applies a potential difference between the wafer and the coating material, and the discharge nozzle is positioned inside the opening of the receiving member in the height direction.

12. The film forming apparatus according to claim 11, wherein the potential difference supplying section is disposed above the opening in the height direction.

13. The film forming apparatus according to claim 1, further comprising a cleaning liquid supply unit that supplies a cleaning liquid to the wafer while the turntable unit is rotating.

14. The film forming apparatus according to claim 1, further comprising a hot air blowing unit that blows hot air onto the wafer while the turntable unit is rotating.

15. A laser processing device comprising: a laser irradiation unit that processes a wafer by irradiating a laser toward an irradiation position; a turntable unit including a mounting unit on which a wafer is placed when a coating process is performed on the wafer to be laser processed, and a rotation unit that rotates the mounting unit; a coating material potential difference discharge unit that discharges a coating material while applying a potential difference to the wafer placed on the mounting unit; and a control unit that controls the rotation of the turntable unit and controls the coating material potential difference discharge unit so that the coating material is discharged onto the surface of the wafer while the turntable unit is rotating.

Images