Probe bonding apparatus and probe bonding method using same
The probe bonding device optimizes productivity and reduces defects by dividing processes and correcting mechanical deviations using movable grippers and cameras for precise bonding.
Patent Information
- Application Number
- PCT/KR2025/007878
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2024-06-24
- Filing Date
- 2025-06-10
- Publication Date
- 2026-01-02
AI Technical Summary
Existing probe bonding devices face inefficiencies in productivity due to waiting periods and mechanical deviations caused by thermal expansion and assembly tolerances, leading to incorrect bonding and high defect rates.
A probe bonding device with divided processes and movable grippers, laser units, and cameras to correct deviations along the X, Y, and Z axes, allowing for precise bonding and reduced waiting times.
The device enhances productivity by minimizing waiting times and reducing defect rates through accurate positioning and compensation for mechanical deviations.
Smart Images

Figure KR2025007878_02012026_PF_FP_ABST
Abstract
Description
Probe bonding device and probe bonding method using the same
[0001] The present invention relates to a probe bonding device and a probe bonding method using the same, and more specifically, to a probe bonding device that increases productivity by dividing some processes and correcting deviations, and a probe bonding method using the same.
[0002] A probe bonding device is a device for accurately bonding a probe to a specified location.
[0003] Figure 1 is a drawing showing a general probe bonding device (20).
[0004] Referring to Fig. 1, a typical probe bonding device (20) is configured to include a tray (21), a first gripper (22), a forming unit (23), a bonding gripper (24), a soldering vessel (25), a chuck unit (26), a vision unit (27), and a laser unit (28).
[0005] In a typical probe bonding device (20), the probe mounted on the tray (21) is gripped by the first gripper (22) and transferred to the forming unit (23), and the probe is mechanically aligned using the forming unit (23). Thereafter, the probe is gripped again by the bonding gripper (24) and dipped in a soldering bath (25) to apply solder paste to the lower portion of the probe. Thereafter, the bonding gripper (24) transfers the probe to which the solder paste has been applied to the bonding position of the substrate fixed on the chuck unit (26), confirms the position by the vision unit (27), and irradiates a laser by the laser unit (28) to complete bonding.
[0006] Meanwhile, the probe bonding method using a probe bonding device (20) is performed sequentially, and the time required for each step varies. Consequently, some devices experience a waiting period without performing any work. This means that productivity is not optimized, and it is costly and time-consuming.
[0007] In addition, the probe bonding device (20) includes heat-generating components such as a motor, camera, and lighting. Since each component is not made of the same material, its thermal expansion coefficient is different, and its expansion and contraction rate according to temperature changes are different. In addition, since each component is formed by assembling various parts, the shape tolerance and dimensional tolerance may differ for each part. Accordingly, there is a problem that the probe cannot be bonded in the correct position due to the occurrence of an overall mechanical deviation.
[0008] The present invention is intended to solve the above-described problems, and its purpose is to provide a probe bonding device that optimizes productivity by dividing some processes and a probe bonding method using the same.
[0009] In addition, the present invention aims to provide a probe bonding device and a probe bonding method using the same, which lower the defect rate and increase productivity by correcting deviations caused by mechanical deviation or dualization.
[0010] The probe bonding device according to the present invention is composed of a probe bonding section and a pair of probe feeding sections.
[0011] The pair of probe feeding units include a right gripper that grips and transports a right probe and a left gripper that grips and transports a left probe, and the probe bonding unit includes a wafer unit that vacuum-absorbs and fixes a wafer to which the right probe or the left probe is bonded, a laser unit that bonds the right probe or the left probe to the wafer by irradiating a laser, and a vision unit including a camera arranged so that the position at which the right probe or the left probe is bonded to the wafer coincides with the center point.
[0012] The right gripper, the left gripper, the wafer, the laser unit, and the camera are each installed to be movable along the X-axis, Y-axis, or Z-axis.
[0013] In addition, the pair of probe feeding parts are arranged to be spaced apart from each other in the X-axis direction, the probe bonding part is arranged between the pair of probe feeding parts, the right gripper and the left gripper are respectively installed on both sides of the probe bonding part in the X-axis direction so as to be movable in the X-axis direction, and the camera can be installed so as to be movable in the Z-axis direction so that the upper end of the right probe or the left probe transferred to the probe bonding part by the right gripper or the left gripper is clearly displayed.
[0014] In addition, the wafer can be installed so as to be movable in the X-axis or Y-axis direction so that the deviation in the X-axis or Y-axis direction between the center point of the camera and the top of the right probe or the left probe can be corrected.
[0015] Additionally, the right probe and the left probe may have different shapes.
[0016] Additionally, the right gripper and the left gripper may have different specifications to correspond to the different shapes of the right probe and the left probe.
[0017] In addition, one of the right probe and the left probe includes a first probe and a second probe of different sizes, and the camera can be installed to be movable in the Y-axis direction so that the center point can be changed corresponding to the first probe and the second probe.
[0018] Meanwhile, in the probe bonding method using the probe bonding device of the present invention, the right probe or the left probe is gripped by the right gripper or the left gripper and transferred to the wafer unit, the upper end of the right probe or the left probe transferred to the wafer unit by the right gripper or the left gripper is displayed on the camera, the camera is moved in the Z-axis direction so that the upper end of the right probe or the left probe is clearly displayed, and the X-axis deviation and the Y-axis deviation are measured through the error between the upper end of the right probe or the left probe and the center point of the camera, and the right gripper, the left gripper, and the wafer are moved along the X-axis, Y-axis, or Z-axis, respectively, so that the X-axis deviation, the Y-axis deviation, and the Z-axis deviation are corrected, and a laser is irradiated to bond the right probe or the left probe to the wafer.
[0019] Additionally, the right gripper or the left gripper may be moved in the X-axis direction to correct the X-axis deviation, the wafer may be moved in the Y-axis direction to correct the Y-axis deviation, and the right probe or the left probe may be moved in the Z-axis direction to contact the wafer to reflect the Z-axis deviation.
[0020] In addition, the upper end of the pad located on the wafer to be bonded with the right probe or the left probe is displayed on the camera, and the camera is moved in the Z-axis direction so that the upper end of the pad is clearly displayed, and the Z-axis auxiliary deviation is measured, and the right probe or the left probe can be moved in the Z-axis direction to make contact with the pad by reflecting the Z-axis deviation and the Z-axis auxiliary deviation.
[0021] Additionally, one of the right probe and the left probe includes a first probe and a second probe of different sizes, and the camera can be moved in the Y-axis direction to change the center point corresponding to the first probe and the second probe.
[0022] According to the probe bonding device of the present invention and the probe bonding method using the same, there is an advantage in that some processes can be divided into two, thereby minimizing the waiting time of each device, thereby eliminating wasted time and ensuring productivity.
[0023] In addition, there is an advantage in that the defect rate can be reduced and reliability can be secured by compensating for structural deviations occurring in the device or deviations occurring due to the dualization process and bonding the probe to a more accurate location.
[0024] Figure 1 is a schematic drawing of a conventional probe bonding device.
[0025] FIG. 2 is a drawing illustrating a probe bonding device according to one embodiment of the present invention.
[0026] Figure 3 is a schematic diagram illustrating a probe bonding method according to one embodiment of the present invention.
[0027] FIG. 4 and FIG. 5 are schematic drawings illustrating the bonding position correction of a probe in a probe bonding device according to one embodiment of the present invention.
[0028] FIG. 6 is a schematic diagram illustrating position correction of a wafer in a probe bonding device according to one embodiment of the present invention.
[0029] FIG. 7 is a drawing illustrating a camera of a probe bonding device according to one embodiment of the present invention.
[0030] FIG. 8 and FIG. 9 are drawings illustrating changes in the position of a camera corresponding to a probe in a probe bonding device according to one embodiment of the present invention.
[0031] Hereinafter, specific embodiments of the present invention will be described in detail with reference to the drawings. However, the spirit of the present invention is not limited to the presented embodiments, and those skilled in the art who understand the spirit of the present invention will be able to easily propose other regressive inventions or other embodiments included within the spirit of the present invention by adding, modifying, or deleting other components within the scope of the same spirit. However, this will also be considered to be included within the spirit of the present invention.
[0032] Hereinafter, specific embodiments of the present invention will be described in detail with reference to the drawings. Hereinafter, the X-axis, Y-axis, and Z-axis shown in the drawings represent a first direction, a second direction, and a third direction, respectively. Each direction may be understood as any direction perpendicular to each other, and in particular, the third direction may be understood as an up-down direction. In addition, each direction generally includes both directions as an axial direction, and the description is limited to one direction if necessary.
[0033] Fig. 2 is a drawing illustrating a probe bonding device (100) according to one embodiment of the present invention. Fig. 2 is a drawing illustrating the probe bonding device (100) in a perspective view close to a plan view including the X and Y axes. This drawing is drawn from approximately the upper front, and some of the outer components are omitted in order to more effectively illustrate the configuration of the device described later.
[0034] As illustrated in FIG. 2, the probe bonding device (100) can be divided into a probe feeding part (104, 106) and a probe bonding part (102). The pair of probe feeding parts (104, 106) are arranged to be spaced apart from each other in the X-axis direction, and the probe bonding part (102) is arranged between the pair of probe feeding parts (104, 106). In other words, the probe feeding parts (104, 106) are arranged on both sides of the probe bonding part (102) in the X-axis direction, respectively.
[0035] At this time, the pair of probe feeding units can be divided into a right probe feeding unit (104) and a left probe feeding unit (106) based on the probe bonding unit (102). The right probe feeding unit (104) and the left probe feeding unit (106) may be driven simultaneously, or only one of them may be driven. For example, only the right probe feeding unit (104) may be driven, and the left probe feeding unit (106) may not be driven and remain stationary. That is, the pair of probe feeding units (104, 106) are driven independently of each other.
[0036] The pair of probe feeding units (104, 106) above include a right gripper (110) that grips and transports a right probe and a left gripper (120) that grips and transports a left probe. The right gripper (110) and the left gripper (120) are respectively installed on opposite sides of the probe bonding unit (102) in the X-axis direction so as to be movable in the X-axis direction. That is, the right gripper (110) is included in the right probe feeding unit (104), and the left gripper (120) is included in the left probe feeding unit (106).
[0037] The pair of probe feeding units (104, 106) may further include various configurations and may be configured identically to each other. For example, the pair of probe feeding units (104, 106) may each include at least one tray (115) on which a plurality of probes are mounted and a dipping pot containing solder paste. The right gripper (110) or the left gripper (120) may grip any one of the plurality of probes mounted on the tray (115) and apply solder paste thereon to transport the same.
[0038] Here, right and left are named for the purpose of distinction and are not limited thereto. In particular, the probe transported by the right gripper (110) is called the right probe, and the probe transported by the left gripper (120) is called the left probe. In addition, all probes used in the probe transport device (100) of the present invention may be collectively called probes.
[0039] The above probe bonding unit (102) may include a wafer unit (130), a laser unit (140), and a vision unit (150).
[0040] The wafer unit (130) can fix the wafer (wafer, 132) to which the right probe (110) or the left probe (120) is bonded by vacuum suction. The wafer unit (130) can include various configurations, and for example, can include a wafer table that vacuum suctions the wafer (132) to rotate it 360 degrees and fix it by correcting its position, and a work unit that moves the wafer table in the X-axis and Y-axis to fix it in a set position. Accordingly, the wafer (132) can be understood to be capable of movement in the X-axis, Y-axis, and rotational directions.
[0041] The laser unit (140) can irradiate a laser to bond the right probe (110) or the left probe (120) to the wafer (132). At this time, the laser unit (140) can be provided to be movable in the Z-axis direction to correct for deviation.
[0042] The vision unit (150) may include a camera (152) positioned so that the position where the right probe (110) or the left probe (120) is bonded to the wafer (132) coincides with the center point. At this time, the camera (152) may be arranged to be movable in the Z-axis direction or the Y-axis direction to correct for deviation.
[0043] In summary, the right gripper (110), the left gripper (120), the wafer (132), the laser unit (140), and the camera (152) can be installed to be movable along the X-axis, Y-axis, or Z-axis, respectively.
[0044] FIG. 3 is a drawing schematically illustrating a probe bonding method using a probe bonding device (100) according to one embodiment of the present invention.
[0045] When the probe bonding device (100) is operated, the right gripper (110) or the left gripper (120) is operated (S10, S12). As described above, the right gripper (110) and the left gripper (120) may be operated together, or only one of them may be operated as needed. In addition, when the right gripper (110) and the left gripper (120) are operated together, they may be operated with a predetermined time difference from each other.
[0046] When the right gripper (110) is operated (S10), the right gripper (110) grips the right probe (S20) and transports it toward the wafer (132) (S30). In addition, when the left gripper (120) is operated (S12), the left gripper (120) grips the left probe (S22) and transports it toward the wafer (132) (S32).
[0047] Through this process, the right probe or the left probe, i.e., the probe, can be transferred to the probe bonding unit (102). The probe is displayed on the camera (152) and the deviation in the X-axis, Y-axis, and Z-axis is measured (S40). At this time, the deviation means the distance between the position to be bonded and the actual position of the probe, and can be understood as an error caused by various causes. This deviation is divided into the X-axis deviation, the Y-axis deviation, and the Z-axis deviation, and the respective distances are measured.
[0048] And, the right gripper (110), the left gripper (120), the wafer (132), the laser unit (140), and the camera (152) move along the X-axis, Y-axis, or Z-axis, respectively, to correct the deviation (S50). As a result, the bonding is performed by moving so that the position to be bonded and the actual position of the probe are aligned (S60).
[0049] Below, deviation measurement (S40) and deviation correction (S50) are described in detail with specific examples.
[0050] Figures 4 and 5 are schematic drawings illustrating probe bonding position correction in a probe bonding device (100) according to one embodiment of the present invention. Figure 4 schematically illustrates the camera (152) and one probe (P), and Figure 5 illustrates a display unit (154) on the camera (152).
[0051] Figure 4 (a) illustrates that one probe (P) is transferred to the probe bonding unit (102) where the camera (152) is installed. The probe (P) can be gripped by the right gripper (110) or the left gripper (120) and transferred in the X-axis direction. In addition, the probe (P) can be transferred by a preset distance and then stopped.
[0052] Figure 4 (b) illustrates measuring the actual position of the probe (P) transferred in this manner by the camera (152). First, it is determined whether the upper end (PT, Pin Tip) of the probe (P) is clearly displayed through the camera (152). If the upper end (PT) of the probe (P) is clearly displayed, it can be determined that there is no Z-axis deviation of the probe (P), i.e., no vertical deviation (Z-axis deviation = 0).
[0053] Meanwhile, if the upper end (PT) of the probe (P) is not clearly displayed, the camera (152) can be moved in the Z-axis direction, i.e., in the up-and-down direction, to obtain a clear image. In addition, this can be called an auto focus process of the camera (152). For example, the camera (152) can capture an image while moving 1 um in the Z-axis direction to obtain the clearest image of the upper end (PT) of the probe (P). And the difference in the distance moved to obtain a clear image from the existing position is stored as the Z-axis deviation (Z-axis deviation = z, z is an arbitrary number).
[0054] As shown in Fig. 5, the upper end (PT) of the probe (P) is displayed on the display portion (154) of the camera (152). The display portion (154) of the camera (152) is formed as a whole in the shape of a square, and is further divided into four squares, with a center point (156) displayed in the middle. At this time, the center point (156) coincides with the position where the probe (P) is to be bonded.
[0055] When the center point (156) and the upper end (PT) of the probe (P) coincide with each other as in (b) of Fig. 5, it can be determined that there is no X-axis deviation or Y-axis deviation of the probe (P) (X-axis deviation = 0, Y-axis deviation = 0).
[0056] Meanwhile, when the upper end (PT) of the probe (P) does not coincide with the center point (156) as in (a) of FIG. 5, the distance from the center point (156) is measured in the X-axis direction and the Y-axis direction, respectively, so that the X-axis deviation and the Y-axis deviation can be measured (X-axis deviation = x, Y-axis deviation = y, x and y are arbitrary numbers).
[0057] As described above, the right gripper (110) and the left gripper (120) are movable in the X-axis direction, and the wafer (132) is movable in the X-axis and Y-axis directions. Therefore, the right gripper (110), the left gripper (120), or the wafer (132) may move in the X-axis and Y-axis directions to correct the X-axis deviation and the Y-axis deviation. For example, the right gripper (110) or the left gripper (120) may move in the X-axis direction to correct the X-axis deviation, and the wafer (132) may move in the Y-axis direction to correct the Y-axis deviation.
[0058] In addition, the probe (P) whose X-axis deviation and Y-axis deviation are corrected is moved in the Z-axis direction to make contact with the wafer (132). At this time, the movement in the preset Z-axis direction may be moved while taking the Z-axis deviation into consideration. For example, if it is set to descend 10 um to make contact with the wafer (132) and the Z-axis deviation is +2 um, the probe (P) can make contact with the wafer (132) by descending only 8 um.
[0059] In this way, a laser can be irradiated toward the probe (P) and the wafer (132) arranged in contact with each other to enable bonding. In summary, in order to correct the bonding position of the probe (P), the X-axis deviation, the Y-axis deviation, and the Z-axis deviation are each measured by the camera (152). Then, the right gripper (110), the left gripper (120), or the wafer (132) is moved along the X-axis, Y-axis, or Z-axis, respectively, so that the X-axis deviation, the Y-axis deviation, and the Z-axis deviation are corrected, and a laser is irradiated so that the right probe or the left probe can be bonded to the wafer (132) at an accurate position.
[0060] FIG. 6 is a schematic diagram illustrating position correction of a wafer (132) in a probe bonding device (100) according to one embodiment of the present invention.
[0061] As illustrated in (a) of FIG. 6, the wafer (132) may include a pad (134) to which one probe (P) is bonded. The pad (134) may be displayed on the camera (150). If the pad (134) is not clearly displayed, the camera (152) may be moved in the Z-axis direction, i.e., in the up-and-down direction, to obtain a clear image. In addition, this may be referred to as an auto-focus process of the camera (152). For example, the camera (152) may capture an image while moving 1 um in the Z-axis direction to obtain the clearest image.
[0062] And the difference in the distance moved to obtain a clear image from the existing position is stored as the Z-axis deviation. This is named the Z-axis auxiliary deviation to distinguish it from the Z-axis deviation of the probe described above. And, as shown in (b) of Fig. 6, the probe (P) can be moved in the Z-axis direction to contact the pad (134) while reflecting the Z-axis deviation and the Z-axis auxiliary deviation. That is, the probe (P) can be moved by considering the Z-axis deviation and the Z-axis auxiliary deviation in the movement in the preset Z-axis direction.
[0063] Such Z-axis auxiliary deviation can be measured before any one of the probes (P) is transferred to the probe bonding unit (102). In addition, if the processing deviation or flatness is judged to be good during the manufacturing of the wafer (132), it can be omitted.
[0064] FIG. 7 is a drawing illustrating a camera (152) of a probe bonding device (100) according to one embodiment of the present invention. For convenience of illustration, only a portion of the probe bonding device (100) including the camera (152) is illustrated. Specifically, FIG. 7 illustrates the camera (152), the right gripper (110, or left gripper), the wafer (132), and the laser unit (140).
[0065] As previously described, the camera (152) is movable in the Z-axis direction to perform an auto-focus function. In addition, the camera (152) may be installed to be movable in the Y-axis direction indicated by an arrow in the drawing. This is to accommodate various probes used in the probe bonding device (100) of the present invention.
[0066] For example, the right probe and the left probe may have different shapes. In other words, different probes may be loaded onto the right probe feeding unit (104) and the left probe feeding unit (106) and transferred to the probe bonding unit (102), respectively. This is to increase efficiency in response to the phenomenon of increasingly diverse probe types.
[0067] In addition, the right gripper (110) and the left gripper (120) may have different specifications in response to the different shapes of the right probe and the left probe. In addition, different solder pastes may be provided in the right probe feeding unit (104) and the left probe feeding unit (106) as the types of probes change. In this way, by providing different settings in the right probe feeding unit (104) and the left probe feeding unit (106), the speed and efficiency in manufacturing a finished product can be increased.
[0068] In addition, only one of the right probe feeding unit (104) and the left probe feeding unit (106) can operate, while the other can perform the task of replacing a probe or gripper, etc. Accordingly, the entire equipment does not have to stop due to the replacement of the probe, etc., and productivity can be improved.
[0069] Additionally, either the right probe feeding unit (104) or the left probe feeding unit (106) may include different probes. That is, either the right probe or the left probe may include probes of different sizes. This will be described in detail below.
[0070] FIG. 8 and FIG. 9 are drawings illustrating changes in the position of a camera corresponding to a probe (P) in a probe bonding device (100) according to one embodiment of the present invention.
[0071] Fig. 8 illustrates probes (P) of various sizes. The probes can be classified into Short, Middle, and Long according to their sizes, and Fig. 8 (a) is named as the first probe (P1), Fig. 8 (b) is named as the second probe (P2), and Fig. 8 (c) is named as the third probe (P3). These drawings are intended to represent different probes and are not limited to their shapes.
[0072] The first probe (P1), the second probe (P2), and the third probe (P3) can be sequentially or crosswise transferred to the probe bonding unit (102) by the right gripper (110, or left gripper). In this way, the upper ends (PT1, PT2, PT3) of the transferred probes (P1, P2, P3) can be displayed on the display unit (154) of the camera (152). For comparison, the upper ends of three probes are shown together in FIG. 9, but in reality, only one probe can be displayed on the display unit (154).
[0073] Since each probe has a different size, there may be deviation from each other. In particular, since the length in the Y-axis direction is different, a Y-axis deviation may occur. Therefore, as shown in FIG. 7, the camera (152) can be moved in the Y-axis direction to compensate for the deviation. In addition, the camera (152) can be moved even when the display unit (154) of the camera (152) does not accommodate the display target.
[0074] In summary, the probe bonding device (100) of the present invention can 1) measure and correct deviations in the bonding position of the probe, 2) measure and correct deviations in the position of the wafer (pad), 3) different probes can be transferred from the right and left, and 4) measure and correct deviations even when different probes are transferred from the right or left.
[0075] Although one embodiment of the present invention has been described in detail above, the scope of the present invention is not limited thereto, and it will be apparent to those skilled in the art that various modifications and variations are possible within a scope that does not depart from the technical spirit of the present invention described in the claims.
Claims
1. In a probe bonding device comprising a probe bonding section and a pair of probe feeding sections, The above pair of probe feeding parts are, A right gripper that grips and transports the right probe; and Includes a left gripper that grips and transports the left probe, The above probe bonding part, A wafer unit that secures the wafer to which the right probe or the left probe is bonded by vacuum suction; A laser unit that bonds the right probe or the left probe to the wafer by irradiating a laser; and A vision unit including a camera positioned so that the position at which the right probe or the left probe is bonded to the wafer coincides with the center point, A probe bonding device characterized in that the right gripper, the left gripper, the wafer, the laser unit, and the camera are each installed to be movable along the X-axis, Y-axis, or Z-axis.
2. In paragraph 1, The above pair of probe feeding sections are arranged spaced apart from each other in the X-axis direction, The above probe bonding portion is placed between the pair of probe feeding portions, The above right gripper and the above left gripper are installed on both sides of the probe bonding portion in the X-axis direction so as to be movable in the X-axis direction, A probe bonding device characterized in that the camera is installed movably in the Z-axis direction so that the upper end of the right probe or the left probe transferred to the probe bonding section by the right gripper or the left gripper is clearly displayed.
3. In paragraph 2, So that the deviation in the X-axis or Y-axis direction between the center point of the above camera and the top of the above right probe or the above left probe can be corrected, A probe bonding device characterized in that the wafer is installed so as to be movable in the X-axis or Y-axis direction.
4. In paragraph 1, A probe bonding device characterized in that the right probe and the left probe have different shapes.
5. In paragraph 4, A probe bonding device characterized in that the right gripper and the left gripper have different specifications corresponding to the different shapes of the right probe and the left probe.
6. In paragraph 1, One of the right probe and the left probe comprises a first probe and a second probe of different sizes, A probe bonding device characterized in that the camera is installed movably in the Y-axis direction so as to be able to change the center point corresponding to the first probe and the second probe.
7. The right probe or left probe is gripped by the right gripper or left gripper and transferred to the wafer unit. The upper end of the right probe or the left probe transferred to the wafer unit by the right gripper or the left gripper is displayed on the camera, The camera is moved in the Z-axis direction so that the top of the right probe or the left probe is clearly displayed, and the Z-axis deviation is measured. The X-axis deviation and Y-axis deviation are measured through the error between the top of the right probe or the left probe and the center point of the camera, The right gripper, the left gripper and the wafer are moved along the X-axis, Y-axis or Z-axis, respectively, so that the X-axis deviation, Y-axis deviation and Z-axis deviation are corrected, A probe bonding method in which a laser is irradiated to bond the right probe or the left probe to the wafer.
8. In paragraph 7, The above right gripper or the above left gripper is moved in the X-axis direction so that the X-axis deviation is corrected, The above wafer is moved in the Y-axis direction so that the Y-axis deviation is corrected, A probe bonding method characterized in that the right probe or the left probe is moved in the Z-axis direction to contact the wafer by reflecting the Z-axis deviation.
9. In paragraph 7, The top of the pad located on the wafer to be bonded with the right probe or the left probe is displayed on the camera, In order to clearly display the top of the above pad, the camera is moved in the Z-axis direction and the Z-axis auxiliary deviation is measured. A probe bonding method characterized in that the right probe or the left probe is moved in the Z-axis direction to contact the pad by reflecting the Z-axis deviation and the Z-axis auxiliary deviation.
10. In paragraph 7, One of the right probe and the left probe comprises a first probe and a second probe of different sizes, A probe bonding method, characterized in that the camera is moved in the Y-axis direction to change the center point corresponding to the first probe and the second probe.
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