Carbon / silicon-carbon composite and method for manufacturing same

Abstract

The present invention relates to a carbon / silicon-carbon composite and a method for manufacturing same. A carbon / silicon-carbon composite according to an embodiment of the present invention has an inorganic layer at an interface between carbon and silicon and / or at an interface between silicon and carbon, and thus has a high initial coulombic efficiency (ICE) and can exhibit the effect of enabling stable charging and discharging at a high current rate (C-rate).

Description

Carbon / silicon-carbon composite and method for producing the same

[0001] The present invention relates to a carbon / silicon-carbon composite, and more particularly, to a carbon / silicon-carbon composite and a method for producing the same.

[0002] With the recent development of the information and communication industry, demand for electronic devices has been rapidly increasing, and with the revitalization of the electric vehicle market, demand for batteries used in these electronic devices and electric vehicles has also increased significantly.

[0003] Secondary batteries, including lithium secondary batteries and all-solid-state batteries containing liquid electrolytes, are the most widely used for these applications due to their high energy density and minimal self-discharge when not in use. Secondary batteries generally consist of a positive electrode, a negative electrode, and an electrolyte (liquid or solid). Carbon-based materials such as graphite are widely used as the negative electrode active material.

[0004] Recently, attempts have been made to use silicon-based anode active materials to improve the capacity of secondary batteries. Silicon, with its theoretically very high energy density, is attracting attention as a next-generation battery anode material to replace graphite. However, it reacts with lithium during charging and discharging, increasing its volume by up to 300%. This causes the silicon anode material to fracture during charging and discharging, resulting in significantly reduced mechanical stability.

[0005] To solve these problems, Japanese Patent No. 4393610 discloses a negative electrode active material in which silicon is composited with carbon in a mechanical processing process and the surface of the silicon particles is covered with a carbon layer using a chemical vapor deposition (CVD) method. However, there is a limit to suppressing volume expansion and contraction during charge and discharge.

[0006] In addition, silicon-based negative electrode active materials have a problem in that the solid electrolyte interphase (SEI) layer that is excessively generated during the process of crushing and pulverizing silicon raw materials exhibits instability, which causes a decline in the stability and electrical performance of the battery.

[0007] An object of the present invention is to provide a carbon / silicon-carbon composite having a high initial coulombic efficiency (ICE) and capable of stable charge / discharge at a high C-rate (current rate) by forming an inorganic layer at the interface between carbon and silicon and / or the interface between silicon and carbon in the carbon / silicon-carbon composite.

[0008] Another object of the present invention is to provide a method for producing the carbon / silicon-carbon composite.

[0009] Another object of the present invention is to provide a negative electrode active material comprising the carbon / silicon-carbon composite.

[0010] In order to solve the above-described problem, the present invention provides a carbon / silicon-carbon composite including a carbon support, silicon arranged including a surface of the carbon support, a carbon thin film arranged including a surface of the carbon support and a surface of the silicon, and an inorganic layer arranged including at least one region among an interface phase between the carbon support and the silicon and an interface phase between the silicon and the carbon thin film.

[0011] According to one embodiment of the present invention, the carbon support may include a non-porous carbon support including at least one of hard carbon and soft carbon.

[0012] In addition, the carbon support may be a porous carbon support, the silicon may be disposed on the surface and inside the pores of the porous carbon support, the carbon thin film may be disposed on the surface of the porous carbon support, inside the pores and on the surface of the silicon, and the inorganic layer may be disposed to include at least one region among the interface between the porous carbon support and the silicon and the interface between the silicon and the carbon thin film.

[0013] Additionally, the porous carbon support may have a volume ratio of mesopores having a pore size of 2 to 50 nm of 10 to 80% based on the total pore volume.

[0014] In addition, the porous carbon support may have a BET specific surface area of ​​300 to 3,000 m2 / g, a tap density of 0.05 to 0.5 g / ㎖, and a particle size distribution D50 of 1 to 20 ㎛.

[0015] In addition, the inorganic layer may be formed of aluminum oxide (Al2O3), zinc oxide (ZnO), tin oxide (SnO2), hafnium oxide (HfO), zirconium oxide (ZrO2), titanium oxide (TiO2), silicon oxide (SiO2), or LLZO (Li7La3Zr2O). 12 ), LiPON(Li 2.9 PO 3.3 N 0.46 ), LAO(LiAlO2), and LLTO(Li 0.33 La 0.56 It may include at least one selected from the group consisting of TiO3).

[0016] Additionally, the thickness of the above-mentioned inorganic layer may be 0.1 nm to 100 nm.

[0017] Additionally, the inorganic layer may be 0.01 to 10 wt% of the total weight of the carbon / silicon-carbon composite.

[0018] Additionally, the silicon may be 5 to 80 wt% of the total weight of the carbon / silicon-carbon composite.

[0019] Additionally, the carbon film may be 1 to 30 wt% of the total weight of the carbon / silicon-carbon composite.

[0020]

[0021] In addition, the present invention provides a method for producing a carbon / silicon-carbon composite, comprising the steps of (1) forming silicon including a surface of a carbon support to produce a carbon / silicon composite, (2) forming a carbon thin film including a surface of the carbon / silicon composite to produce a carbon / silicon-carbon composite, and comprising a step of (a) forming an inorganic layer through atomic layer deposition (ALD) including a surface of the carbon support before step (1), or (b) forming an inorganic layer through atomic layer deposition (ALD) including a surface of the carbon / silicon composite between steps (1) and (2), or comprising both steps (a) and (b).

[0022] According to one embodiment of the present invention, the step (a) may be performed one or more times, with the steps of (a-1) supplying a first precursor to a reactor to form a first precursor multilayer including the surface of the carbon support, whereby at least a portion of the first precursor is adsorbed thereon, (a-2) purging the inside of the reactor to remove unadsorbed first precursor from the first precursor multilayer to form a first precursor monolayer, (a-3) supplying a second precursor to the reactor to react the first precursor monolayer with at least a portion of the second precursor to form a composite layer, and (a-4) purging the inside of the reactor to remove unreacted second precursor from the composite layer to form an inorganic layer, as one cycle.

[0023] In addition, the step (b) may be performed one or more times, with the steps of (b-1) supplying a first precursor to a reactor to form a first precursor multilayer including a surface of the carbon / silicon composite, in which at least a portion of the first precursor is adsorbed, (b-2) purging the inside of the reactor to remove unadsorbed first precursor from the first precursor multilayer to form a first precursor monolayer, (b-3) supplying a second precursor to the reactor to react the first precursor monolayer with at least a portion of the second precursor to form a composite layer, and (b-4) purging the inside of the reactor to remove unreacted second precursor from the composite layer to form an inorganic layer, as one cycle.

[0024] Additionally, the time for supplying the first precursor and the time for supplying the second precursor may each independently be 1 to 600 seconds.

[0025] Additionally, the first precursor may include at least one selected from the group consisting of trimethyl aluminum, diethylzinc, zinc acetate, tetrakis(dimethylamino)tin(IV), butoxytris(ethylmethylamido)hafnium, titanium isopropoxide, diisopropylaminosilane, and LiOtBu (lithium tert-butoxide).

[0026] Additionally, the second precursor may include at least one selected from the group consisting of H2O, O3, H2O plasma, O3 plasma, and O2 plasma.

[0027] Additionally, the above cycle can be performed 1 to 1000 times.

[0028] Additionally, the temperature of the carbon support and / or carbon / silicon composite can be maintained at 90 to 400°C during the cycle.

[0029]

[0030] In addition, the present invention provides a negative electrode active material comprising the above-described carbon / silicon-carbon composite and a carbon-based negative electrode material.

[0031]

[0032] In addition, the present invention provides an all-solid-state battery comprising the above-described carbon / silicon-carbon composite.

[0033] According to one embodiment of the present invention, the all-solid-state battery may include the carbon / silicon-carbon composite in at least one of a solid electrolyte interphase (SEI) film and a solid electrolyte.

[0034]

[0035] The expression "arranged including the surface of the carbon support and the surface of the silicon" used in the present invention is an expression that includes both 1) being arranged so as to be in contact with the silicon surface arranged on the surface of the carbon support, but not in contact with the surface of the carbon support, and 2) being arranged so as to be in contact with the silicon surface arranged on the surface of the carbon support, but also in contact with at least a portion of the surface of the carbon support.

[0036] The carbon / silicon-carbon composite according to an embodiment of the present invention can exhibit the effect of high initial coulombic efficiency (ICE) and stable charge / discharge at a high C-rate (current rate) by forming an inorganic layer at the interface between carbon and silicon and / or the interface between silicon and carbon.

[0037] FIG. 1 is a schematic diagram of a carbon / silicon-carbon composite according to one embodiment of the present invention.

[0038] Figure 2 is a graph of XPS analysis results of Examples 1 to 3 and Comparative Example 1 of the present invention.

[0039] Figure 3 is a TEM-EDS (energy dispersive spectrometer) image of Examples 1 and 2 of the present invention.

[0040] Figure 3 is a TEM (transmission electron microscope) image of Example 3 of the present invention.

[0041] The present invention is not limited to the contents disclosed below, and may be modified in various forms as long as the gist of the invention is not changed.

[0042] As used herein, the term “comprising” means that other components may be included unless otherwise stated.

[0043] All numbers and expressions indicating the amounts of components, reaction conditions, etc. described in this specification are to be understood as being modified in all cases by the term “about” unless otherwise stated.

[0044] In this specification, the description that one component is formed above / below another component or is connected or coupled to each other includes both the formation, connection or coupling between these components directly or indirectly through another component.

[0045] The present invention will be described in more detail below.

[0046] carbon / silicon-carbon composites

[0047] According to one embodiment of the present invention, a carbon / silicon-carbon composite is provided, comprising a carbon support, silicon disposed including a surface of the carbon support, a carbon thin film disposed including a surface of the carbon support and a surface of the silicon, and an inorganic layer disposed including at least one region of an interface phase between the carbon support and the silicon and an interface phase between the silicon and the carbon thin film.

[0048] Meanwhile, the carbon / silicon-carbon composite may have a BET surface area of ​​200 m2 / g or less, preferably 100 m2 / g or less, and more preferably 50 m2 / g or less. If the BET surface area of ​​the carbon / silicon-carbon composite exceeds 200 m2 / g, a large number of SEI layers may be formed due to the reaction with the electrolyte due to the high BET, resulting in poor electrochemical performance.

[0049] Hereinafter, each component of a carbon / silicon-carbon composite according to one embodiment of the present invention is described.

[0050] carbon support

[0051] A carbon / silicon-carbon composite according to an embodiment of the present invention comprises a carbon support.

[0052] The above carbon support may be any carbon support commonly used in the art without limitation, but preferably, it may be at least one of a non-porous carbon support and a porous carbon support, more preferably, it may be at least one of hard carbon, soft carbon, carbon black, carbon nanotubes, graphene, carbon fiber, graphite, and a porous carbon support, and even more preferably, it may be at least one of graphite, hard carbon, soft carbon, and a porous carbon support, and even more preferably, it may be at least one of hard carbon, soft carbon, and a porous carbon support, which may be more advantageous in achieving the purpose of the present invention.

[0053] Meanwhile, according to one embodiment of the present invention, the carbon support may be a porous carbon support. In this case, the silicon may be disposed on the surface and inside the pores of the porous carbon support, and the carbon thin film may be disposed on the surface of the porous carbon support, inside the pores, and on the surface of the silicon, and as illustrated in FIG. 1, the inorganic layer may be disposed to include at least one region among the interface between the porous carbon support and the silicon and the interface between the silicon and the carbon thin film.

[0054] The porous carbon support may have a volume ratio of mesopores having a pore size of 2 to 50 nm based on the total pore volume of 10 to 80%, preferably 30 to 60%, and more preferably 40 to 50%. If the volume ratio of the mesopores of the porous carbon support is less than 10%, the number of micropores may be too large, so that a relatively large amount of inorganic layer, silicon, and carbon thin film may be formed on the outside of the particle, and if the volume ratio of the mesopores of the porous carbon support exceeds 80%, the hardness of the particle may be insufficient, so that when an electrode is manufactured using the same, there is a concern that the structure of the electrode may collapse.

[0055] In addition, the porous carbon support may have a BET specific surface area of ​​300 to 3,000 m2 / g. Preferably, the porous carbon support may have a BET specific surface area of ​​300 to 1,500 m2 / g, more preferably, a BET specific surface area of ​​500 to 1,500 m2 / g. When the BET specific surface area of ​​the porous carbon support is less than 300 m2 / g, there may be too many macropores and thus a lack of effective pores, and when the BET specific surface area of ​​the porous carbon support exceeds 3,000 m2 / g, there may be too many micropores and thus a large number of inorganic layers, silicon and carbon thin films may be formed on the outside of the particles.

[0056] In addition, the porous carbon support may have a tap density of 0.05 to 0.5 g / ㎖. Preferably, the porous carbon support may have a tap density of 0.05 to 0.45 g / ㎖, more preferably, a tap density of 0.1 to 0.45 g / ㎖. When the tap density of the porous carbon support is less than 0.05 g / ㎖, process control may be difficult during formation of the inorganic layer, deposition of the silicon source, and formation of the carbon film, which may result in a decrease in yield. In addition, when the tap density of the porous carbon support exceeds 0.5 g / ㎖, uniform formation may be difficult during formation of the inorganic layer, deposition of the silicon source, and formation of the carbon film.

[0057] And, the porous carbon support may have a particle size distribution D50 of 1 to 20 ㎛. Preferably, the porous carbon support may have a particle size distribution D50 of 3 to 20 ㎛, more preferably, a particle size distribution D50 of 3 to 10 ㎛. When the particle size distribution D50 of the porous carbon support is less than 1 ㎛, the inorganic layer-forming material, the silicon source, and the carbon film-forming material cannot sufficiently penetrate into the pores and are formed in large quantities only on the outside of the particles, and when the particle size distribution D50 of the porous carbon support exceeds 20 ㎛, it is difficult for the inorganic layer, silicon, and carbon film to sufficiently form within the pores.

[0058] When a carbon / silicon-carbon composite according to an embodiment of the present invention includes a porous carbon support having the above characteristics, when such a carbon / silicon-carbon composite is used as a negative electrode active material, it has excellent electrical conductivity and can relieve stress caused by volume expansion of silicon.

[0059] silicone

[0060] A carbon / silicon-carbon composite according to an embodiment of the present invention comprises silicon disposed including the surface of the carbon support.

[0061] By arranging the carbon support and silicon as described above in the carbon / silicon-carbon composite according to the present invention, and particularly by arranging silicon on the surface and inside the pores of the carbon support, which is a porous carbon support, the negative electrode material manufactured from the carbon / silicon-carbon composite according to the present invention can have a high electrical capacity while minimizing the influence due to volume expansion of silicon.

[0062] At this time, since the silicon plays a role in charging lithium, when the carbon / silicon-carbon composite according to the embodiment of the present invention is used as a negative electrode active material, the silicon can act as a main negative electrode active material.

[0063] The silicon may be crystalline or amorphous, and preferably amorphous or amorphous in nature. If the silicon is crystalline, the smaller the crystallite size, the more dense the composite can be, thereby enhancing the strength of the matrix and preventing cracking. Accordingly, the initial efficiency or cycle life characteristics of the secondary battery can be improved. On the other hand, if the silicon is amorphous or amorphous in nature, the expansion or contraction during charge and discharge of the secondary battery is small, and battery performance such as capacity characteristics can be improved.

[0064] The above silicon may be in the form of a thin film, and the average thickness of the silicon layer may be 10 nm to 5 μm. If the average thickness of the silicon layer is less than 10 nm, the electric capacity may be reduced, and if the average thickness exceeds 5 μm, the problem caused by volume expansion of the silicon may not be resolved, which may cause structural damage to the negative electrode material and deteriorate the cycle characteristics.

[0065] Meanwhile, the silicon may be 5 to 80 wt% of the total weight of the carbon / silicon-carbon composite according to the present invention, and preferably 10 to 50 wt%. If the silicon is less than 5 wt% of the total weight of the carbon / silicon-carbon composite, the electric capacity may be reduced, and if the silicon is more than 80 wt%, the problem caused by volume expansion of silicon during charge and discharge may not be resolved, which may cause structural damage to the negative electrode material and deteriorate the cycle characteristics.

[0066] The above silicon may further include a silicon oxide compound. The silicon oxide compound has the general formula SiO x It can be expressed as (0.5≤x≤2). Here, when the value of x is less than 0.5, expansion and contraction may increase and the life characteristics may deteriorate during charging and discharging of the secondary battery, and when x exceeds 2, the initial efficiency of the secondary battery may decrease as the amount of inactive oxide increases.

[0067] The content of the silicon oxide compound in the silicon may be 50 wt% or less based on the total weight of the silicon. If the content of the silicon oxide compound in the silicon exceeds 50 wt%, the initial efficiency of the secondary battery may be reduced.

[0068] carbon thin film

[0069] A carbon / silicon-carbon composite according to an embodiment of the present invention comprises a carbon thin film disposed including a surface of the carbon support and a surface of the silicon.

[0070] The carbon / silicon-carbon composite according to an embodiment of the present invention can secure appropriate electrical conductivity by including a carbon thin film, and its specific surface area can be appropriately controlled, so that when used as an anode active material of a secondary battery, the life characteristics and capacity of the secondary battery can be further improved.

[0071] The electrical conductivity of a negative active material is a crucial factor in facilitating electron transfer during electrochemical reactions. The carbon / silicon-carbon composite according to an embodiment of the present invention, by including the carbon thin film, improves the charge / discharge capacity, initial charge efficiency, and capacity retention rate of a secondary battery, provides superior electrical conductivity, suppresses electrolyte side reactions, and further enhances the performance of the secondary battery.

[0072] Meanwhile, the carbon film may be 1 to 30 wt% of the total weight of the carbon / silicon-carbon composite according to the present invention, and preferably 1 to 20 wt%. When the carbon film satisfies the above content range of the total weight of the carbon / silicon-carbon composite, a conductivity improvement effect can be obtained while suppressing a decrease in the capacity of the secondary battery.

[0073] Weapon layer

[0074] A carbon / silicon-carbon composite according to an embodiment of the present invention includes an inorganic layer disposed including at least one region of an interface phase between the carbon support and silicon and an interface phase between the silicon and carbon thin film.

[0075] This inorganic layer is formed by the atomic layer deposition (ALD) method described below.

[0076] The above inorganic layer is formed by ALD, and the type of material is not particularly limited as long as it can be arranged to include at least one region among the interface phase between the porous carbon support and silicon, and the interface phase between the silicon and carbon thin film.

[0077] In a specific example of the present invention, the inorganic layer is aluminum oxide (Al2O3), zinc oxide (ZnO), tin oxide (SnO2), hafnium oxide (HfO), zirconium oxide (ZrO2), titanium oxide (TiO2), silicon oxide (SiO2), LLZO (Li7La3Zr2O 12 ), LiPON(Li 2.9 PO3.3 N 0.46 ), LAO(LiAlO2), and LLTO(Li 0.33 La 0.56 It may include at least one selected from the group consisting of TiO3), but is not particularly limited thereto. In one embodiment of the present invention, the inorganic layer may include aluminum oxide (Al2O3). In addition, according to another embodiment of the present invention, the inorganic layer may include LLZO (Li7La3Zr2O 12 ), LiPON(Li 2.9 PO 3.3 N 0.46 ), LAO(LiAlO2), and LLTO(Li 0.33 La 0.56 TiO3) may include at least one selected from the group consisting of, and the inorganic layer is LLZO (Li7La3Zr2O 12 ), LiPON(Li 2.9 PO 3.3 N 0.46 ), LAO(LiAlO2), and LLTO(Li 0.33 La 0.56 When the solid electrolyte of an all-solid-state battery includes at least one selected from the group consisting of TiO3, it may be more advantageous to apply it.

[0078] In a specific embodiment of the present invention, the thickness of the inorganic layer may be 0.1 nm to 100 nm, preferably 0.1 to 10 nm. As the thickness of the inorganic layer satisfies the above range, it may be more advantageous in achieving the purpose of the present invention.

[0079] In addition, the inorganic layer may be included in an amount of 0.01 to 10 wt% of the total weight of the carbon / silicon-carbon composite, and preferably 0.1 to 1 wt%. When the inorganic layer satisfies the above content range, it may be more advantageous in terms of high initial coulombic efficiency (ICE) and stable charge / discharge at a high C-rate (current rate).

[0080]

[0081] Method for producing carbon / silicon-carbon composites

[0082] According to one embodiment of the present invention, a carbon / silicon-carbon composite comprises: (1) a step of forming silicon including a surface of a carbon support to produce a carbon / silicon composite; (2) a step of forming a carbon thin film including a surface of the carbon / silicon composite to produce a carbon / silicon-carbon composite; and is produced by a manufacturing method that comprises: (a) a step of forming an inorganic layer through atomic layer deposition (ALD) including a surface of the carbon support before step (1), or (b) a step of forming an inorganic layer through atomic layer deposition (ALD) including a surface of the carbon / silicon composite between steps (1) and (2), or comprises both steps (a) and (b).

[0083] Hereinafter, each step of a method for manufacturing a carbon-silicon / carbon composite according to one embodiment of the present invention is described.

[0084] Step (a)

[0085] According to one embodiment of the present invention, before step (1), a step of forming an inorganic layer through atomic layer deposition is included, including a surface of a carbon support.

[0086] Meanwhile, if the carbon support is a porous carbon support, the step (a) may be a step of forming an inorganic layer on the surface and inside the pores of the porous carbon support through atomic layer deposition.

[0087] At this time, the step (a) may be performed one or more times, with the steps of (a-1) supplying a first precursor to a reactor to form a first precursor multilayer including the surface of the carbon support, in which at least a portion of the first precursor is adsorbed, (a-2) purging the inside of the reactor to remove unadsorbed first precursor from the first precursor multilayer to form a first precursor monolayer, (a-3) supplying a second precursor to the reactor to react the first precursor monolayer with at least a portion of the second precursor to form a composite layer, and (a-4) purging the inside of the reactor to remove unreacted second precursor from the composite layer to form an inorganic layer, as one cycle.

[0088] First, in the step (a-1), a first precursor may be supplied to a reactor to form a first precursor multilayer including the surface of the carbon support, with at least a portion of the first precursor adsorbed thereon.

[0089] In a specific embodiment of the present invention, the first precursor may include at least one selected from the group consisting of trimethyl aluminum, diethylzinc, zinc acetate, tetrakis(dimethylamino)tin(IV), butoxytris(ethylmethylamido)hafnium, titanium isopropoxide, diisopropylaminosilane, and LiOtBu (lithium tert-butoxide). In one embodiment of the present invention, the first precursor may include trimethyl aluminum. In addition, according to another embodiment of the present invention, the first precursor may include LiOtBu (lithium tert-butoxide), and when the first precursor includes LiOtBu (lithium tert-butoxide), it may be more advantageous when applied to a solid electrolyte of an all-solid-state battery.

[0090] In a specific embodiment of the present invention, the supply time of the first precursor may be 1 to 600 seconds. In a preferred specific embodiment of the present invention, the supply time of the first precursor may be 1 second or more, 2 seconds or more, 5 seconds or more, 10 seconds or more, or 15 seconds or more and 600 seconds or less, 300 seconds or less, 100 seconds or less, 50 seconds or less, or 20 seconds or less. When the supply time of the first precursor satisfies the above range, the layer of the first precursor can be appropriately formed, including the surface of the carbon support. However, when the supply time of the first precursor is less than 1 second, it may be difficult to form an inorganic layer with a uniform thickness due to incomplete atomic layer deposition, and when the supply time exceeds 600 seconds, the thickness of the inorganic layer may become excessively thick, and the purging time may also increase, thereby lengthening the overall process time.

[0091] Next, in step (a-2), the supply of the first precursor is stopped and the inside of the reactor is purged to remove the unadsorbed first precursor from the first precursor multilayer, thereby forming a first precursor monolayer.

[0092] In a specific example of the present invention, step (a-2) may be purged using an inert gas, and the inert gas may include nitrogen (N2) or argon (Ar).

[0093] In a specific embodiment of the present invention, the purging time of step (a-2) may be 1 to 300 seconds. In a preferred specific embodiment of the present invention, the purging time may be 1 second or more, 2 seconds or more, 5 seconds or more, 10 seconds or more, or 15 seconds or more and 300 seconds or less, 200 seconds or less, 100 seconds or less, 50 seconds or less, or 20 seconds or less. If the purging time is too short, residues of the first precursor may remain, forming an inorganic oxide film thicker than the intended thickness, and if the purging time is too long, the process efficiency may be reduced.

[0094] Next, in step (a-3), a second precursor may be supplied to the reactor to react the first precursor monolayer with at least a portion of the second precursor to form a composite layer.

[0095] In a specific embodiment of the present invention, the second precursor may include at least one selected from the group consisting of H2O, O3, H2O plasma, O3 plasma, and O2 plasma. In a preferred specific embodiment of the present invention, the second precursor may include H2O.

[0096] A layer of the first precursor and a second precursor may react to form an inorganic layer on the particle surface, the inorganic layer including at least one selected from the group consisting of aluminum oxide (Al2O3), zinc oxide (ZnO), tin oxide (SnO2), hafnium oxide (HfO), zirconium oxide (ZrO2), titanium oxide (TiO2), silicon oxide (SiO2), and lithium tert-butoxide (LiOtBu).

[0097] In a specific embodiment of the present invention, the supply time of the second precursor may be 1 to 600 seconds. In a preferred specific embodiment of the present invention, the supply time of the second precursor may be 1 second or more, 2 seconds or more, 5 seconds or more, 10 seconds or more, or 15 seconds or more and 600 seconds or less, 300 seconds or less, 100 seconds or less, 50 seconds or less, or 20 seconds or less. When the supply time of the second precursor satisfies the above range, the inorganic layer can be appropriately formed, including the surface of the carbon support. However, when the supply time of the second precursor is less than 1 second, it may be difficult to form an inorganic layer with a uniform thickness due to incomplete atomic layer deposition, and when the supply time exceeds 600 seconds, the thickness of the inorganic layer may become excessively thick, and the purging time may also increase, thereby lengthening the overall process time.

[0098] Next, in step (a-4), the supply of the second precursor is stopped and the inside of the reactor is purged to remove the unreacted second precursor from the composite layer, thereby forming an inorganic layer.

[0099] In a specific example of the present invention, step (a-4) may be purged using an inert gas, and the inert gas may include nitrogen (N2) or argon (Ar).

[0100] In a specific embodiment of the present invention, the purging time of step (a-4) may be 1 to 300 seconds. In a preferred specific embodiment of the present invention, the purging time may be 1 second or more, 2 seconds or more, 5 seconds or more, 10 seconds or more, or 15 seconds or more and 300 seconds or less, 200 seconds or less, 100 seconds or less, 50 seconds or less, or 20 seconds or less. If the purging time is too short, residues of the second precursor may remain, forming an inorganic oxide film thicker than the intended thickness, and if the purging time is too long, the process efficiency may be reduced.

[0101] In a specific embodiment of the present invention, the temperature of the carbon support may be maintained at 90 to 400°C during the cycle described above. In a preferred embodiment of the present invention, the temperature of the carbon support may be maintained at 120 to 300°C during the cycle. If the temperature of the carbon support is lower than 90°C, defects may occur in the inorganic layer formed due to incomplete reaction, and if the temperature exceeds 400°C, there may be a problem of excessive formation of an inorganic thin film on the carbon support.

[0102] In a specific embodiment of the present invention, the above cycle may be performed under a pressure of 0.5 to 10 Torr. In a preferred embodiment of the present invention, the above cycle may be performed under a pressure of 1 to 5 Torr.

[0103] In a specific embodiment of the present invention, the above cycle may be repeated 1 to 1,000 times. In a preferred embodiment of the present invention, the above cycle may be repeated 10 to 1,000 times. If the above cycle is performed more than 1,000 times, an inorganic layer may be excessively formed, including on the surface of the carbon support, and the process time may be prolonged.

[0104] Meanwhile, the method for manufacturing a carbon / silicon-carbon composite according to the present invention includes step (a) above, step (b) described below, or both step (a) above and step (b) described below.

[0105] (1) Step

[0106] In step (1) above, a carbon / silicon composite is manufactured by forming silicon including the surface of a carbon support.

[0107] Meanwhile, if the carbon support is a porous carbon support, the step (1) may be a step of manufacturing a carbon / silicon composite by forming it on the surface and inside the pores of the porous carbon support.

[0108] In a specific embodiment of the present invention, the step of forming silicon including the surface of a carbon support may be performed using a device (e.g., a rotary kiln) and a method (e.g., chemical vapor deposition (CVD)) known in the art to which the present invention pertains. Specifically, silicon including the surface of the carbon support may be formed by supplying a silicon source to the carbon support and performing CVD.

[0109] In a specific embodiment of the present invention, the silicon source may include at least one selected from silane (SiH4), dichlorosilane (SiH2Cl2), silicon tetrafluoride (SiF4), silicon tetrachloride (SiCl4), methylsilane (CH3SiH3), and disilane (Si2H6), but is not particularly limited thereto.

[0110] The CVD of the above silicon source can be performed at a temperature of 300 to 700°C. For example, the CVD of the silicon source can be performed at a temperature of 400 to 600°C, 400 to 500°C, or 400 to 450°C, but is not particularly limited to this range.

[0111] (I) step

[0112] According to one embodiment of the present invention, between steps (1) and (2) above, a step (b) of forming an inorganic layer through atomic layer deposition (ALD) including the surface of the carbon / silicon composite is included.

[0113] Meanwhile, if the carbon support is a porous carbon support, the step (b) may be a step of forming an inorganic layer on the surface and inside the pores of the carbon / silicon composite through atomic layer deposition (ALD).

[0114] At this time, the step (b) may be performed one or more times, with the steps of (b-1) supplying a first precursor to a reactor to form a first precursor multilayer including the surface of the carbon / silicon composite, in which at least a portion of the first precursor is adsorbed, (b-2) purging the inside of the reactor to remove unadsorbed first precursor from the first precursor multilayer to form a first precursor monolayer, (b-3) supplying a second precursor to the reactor to react the first precursor monolayer with at least a portion of the second precursor to form a composite layer, and (b-4) purging the inside of the reactor to remove unreacted second precursor from the composite layer to form an inorganic layer, as one cycle.

[0115] Since the description of the method and conditions of steps (Na-1) to (Na-4) above may be the same as the description of the method and conditions of steps (A-1) to (A-4) described above, it is omitted in the present invention.

[0116] In a specific embodiment of the present invention, the temperature of the carbon / silicon composite may be maintained at 90 to 400°C during the cycle described above. In a preferred specific embodiment of the present invention, the temperature of the carbon / silicon composite may be maintained at 120 to 300°C during the cycle. If the temperature of the carbon / silicon composite is lower than 90°C, defects may occur in the inorganic layer formed due to incomplete reaction, and if the temperature exceeds 400°C, there may be a problem of excessive formation of an inorganic thin film on the carbon / silicon composite.

[0117] Meanwhile, the method for manufacturing a carbon / silicon-carbon composite according to the present invention includes step (a), step (b), or both step (a) and step (b).

[0118] (2) Step

[0119] In step (2) above, a carbon film is formed including the surface of the carbon / silicon composite to manufacture a carbon / silicon-carbon composite.

[0120] Meanwhile, if the carbon support is a porous carbon support, the step (2) may be a step of manufacturing a carbon / silicon-carbon composite by forming a carbon thin film on the surface and inside the pores of the carbon / silicon composite.

[0121] The step of forming a carbon thin film, including the surface of the carbon / silicon composite, may be performed using devices and methods known in the art to which the present invention pertains, such as chemical pyrolysis deposition, but is not particularly limited thereto. For example, the carbon thin film may be formed by carbonizing a polymer thin film formed through initiator-assisted chemical vapor deposition (iCVD).

[0122] In a specific example of the present invention, the step of forming a carbon thin film including the surface of the carbon / silicon composite can be performed by heat treatment at a temperature of 400 to 1,400°C in the presence of a gaseous carbon source.

[0123] In a preferred embodiment of the present invention, the carbon source may include at least one selected from the group consisting of methane, ethane, propane, butane, methanol, ethanol, propanol, propanediol, butanediol, ethylene, propylene, butylene, butadiene, cyclopentene, acetylene, benzene, toluene, xylene, ethylbenzene, naphthalene, anthracene, and dibutylhydroxytoluene, but is not particularly limited thereto.

[0124] The step of forming a carbon film, including the surface of the carbon / silicon composite, can be performed in the presence of at least one inert gas selected from the group consisting of hydrogen, nitrogen, helium, and argon in addition to the above carbon source.

[0125] The reaction time (heat treatment time) for forming the above carbon thin film can be appropriately adjusted depending on the heat treatment temperature, the pressure during the heat treatment, the composition of the gas mixture, and the desired carbon coating amount. For example, the above reaction time may range from 10 minutes to 100 hours, specifically from 30 minutes to 90 hours, and more specifically from 50 minutes to 40 hours, but is not specifically limited to this range.

[0126] In a specific example of the present invention, the step of forming a carbon film including the surface of a carbon / silicon composite may be performed by mixing a solution in which a carbon source is dispersed in a solvent as needed with the carbon / silicon composite, and then drying and heat-treating the same at a temperature of 400 to 1,400°C.

[0127] In a preferred embodiment of the present invention, the carbon source may be selected from the group consisting of pitch, hydrocarbon-based material, and petroleum-based material. More specifically, the pitch may be petroleum-based pitch, coal-based pitch, or a mixture thereof, the hydrocarbon-based material may be furfuryl alcohol or a phenolic resin, and the petroleum-based material may be pyrolysis fuel oil (PFO), naphtha cracking bottom oil (NCB), ethylene cracker bottom oil (EBO), vacuum residue (VR), de-asphalted oil (DAO), atmospheric residue (AR), fluid catalytic cracking decant oil (FCC-DO), residue fluid catalytic cracking decant oil (RFCC-DO), or heavy aromatic oil. The solvent may be tetrahydrofuran (THF) or alcohol.

[0128] In addition, when the carbon film is formed by carbonization of a polymer film, a monomer, which is a volatile substance that can be activated by an initiator to form a polymer, is activated by an initiator to polymerize the monomer, thereby forming a polymer film, and then the formed polymer film can be carbonized.

[0129] At this time, the monomer may be at least one of a vinyl or acrylate monomer containing at least one of a siloxane group, an amine group, a fluorine group, and an aromatic hydrocarbon group.

[0130] In addition, the polymer thin film in which the monomer is polymerized is, for example, 4-vinyl pyridine (4VP), 2,4,6,8-tetramethyl-2,4,6,8-tetravinylcyclotetrasiloxane, 3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,10-heptadecafluorodecyl methacrylate (PFDMA), 1,3,5,7-tetravinyl-1,3,5,7-tetramethylcyclotetrasiloxane (V4D4), 1,3,5-trimethyl-1,3,5-trivinylcyclotrisiloxane (V3D3), hexavinyldisiloxane (HVDS), glycidyl methacrylate, divinylbenzene, diethylene glycol divinyl ether, diethylene glycol diacrylate (DEGDA), ethylene glycol dimethacrylate, dimethylaminoethyl methacrylate, methacrylic acid and 1,3-diethenyl-1,1,3,3-tetramethyl-disiloxane, 1H,1H,2H,2H-Perfluorodecyl acrylate, Perfluorodecyl methacrylate, Dodecafluoroheptyl acrylate, Pentafluorophenyl methacrylate, 3,3,4,4,5,5,6,6,7,7,8,8,9,9,9-Pentadecafluorononyl acrylate, 2-Methyl-3,3,4,4,5,5,6,6,7,7,8,8,9,9,9-Pentadecafluorononyl acrylate, 3,3,4,4,5,5,6,6,7,7,8,8,8-Tridecafluorooctyl acrylate, 2-Methyl-3,3,4,4,5,5,6,6,7,7,8,8,8-Tridecafluorooctyl acrylate, 3,3,4,4,5,5,6,6,7,7,7-Undecafluoroheptyl acrylate, 2-methyl-3,3,4,4,5,5,6,6,7,7,7-undecafluoroheptyl acrylate, 3,3,4,4,5,5,6,6,6-nonafluorohexyl acrylate, 2-methyl-3,3,4,4,5,5,6,6,6-nonafluorohexyl acrylate, 3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,11,11,11-nonadecafluoroundecyl acrylate, 2-methyl-3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,11,11,11-nonadecafluoroundecyl acrylate, 3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,11,11,12,12,12-Heneicosafluorododecyl acrylate, 2-methyl-3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,11,11,12,12,12-Heneicosafluorododecyl acrylate, 3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,11,11,12,12,13,13,13-Tricosafluorotridecyl acrylate, 2-Methyl-3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,11,11,12,12,13,13,13-Tricosafluorotridecyl acrylate, 3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,11,11,12,12,13,13,14,14,14-pentacosafluorotetradecyl acrylate, and 2-Methyl-3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,11,11,12,12,13,13,14,14,14-pentacosafluorotetradecyl acrylate, dimethylaminoethyl methacrylate, dimethylaminoethyl acrylate, diethylaminoethyl It may be polymerized from one or more monomers selected from the group consisting of methacrylate, and diethylaminoethyl acrylate.

[0131] Additionally, the initiator may be, for example, a peroxide. Specifically, the initiator may include at least one selected from the group consisting of di-t-butyl peroxide, t-butyl peroxybenzoate, benzoyl peroxide, methyl ethyl ketone peroxide, lauryl peroxide, and benzophenone, but is not particularly limited thereto.

[0132] At this time, the flow rate of the monomer supplied to the reactor may be 0.1 sccm to 10 sccm. Specifically, the monomer flow rate may be 0.1 sccm or more, or 0.2 sccm or more and 10 sccm or less, 5 sccm or less, or 4 sccm or less.

[0133] Additionally, the flow rate of the initiator supplied to the reactor may be 0.1 sccm to 5 sccm. Specifically, the initiator flow rate may be 0.1 sccm or more and 5 sccm or less, 3 sccm or less, or 2 sccm or less.

[0134] In addition, the initiator can be activated through a predetermined heat treatment, and the heat treatment can be performed at a temperature of 135 to 350°C, preferably 140 to 340°C, and satisfying the temperature conditions can be advantageous in terms of preventing changes in the properties of the reactants.

[0135] Meanwhile, in order to increase the adsorption rate of the monomer and free radicals, it is desirable to maintain a low temperature, including the surface of the carbon / silicon composite. Specifically, the temperature, including the surface of the carbon / silicon composite, is preferably in the range of 10 to 50°C, preferably 13 to 45°C, but is not particularly limited to this range.

[0136]

[0137] Preliminary stage

[0138] As described above, the carbon support may be any carbon support commonly used in the art without limitation, but preferably, at least one of a non-porous carbon support and a porous carbon support may be used, more preferably, at least one of graphite, hard carbon, soft carbon, and porous carbon support may be used, and even more preferably, using at least one of hard carbon, soft carbon, and porous carbon support may be more advantageous in achieving the purpose of the present invention.

[0139] When the carbon support is a porous carbon support, the method for producing the carbon / silicon-carbon composite may further include, before step (1) if step (a) is not included, or before step (a) if step (a) is included, (a) a step of synthesizing pitch by thermal decomposition and polycondensation of a petroleum-based raw material, (b) a step of solidifying and pelletizing the pitch to obtain a pellet-like pitch, or a step of solidifying, pelletizing, and pulverizing the pitch to obtain a powder-like pitch, (c) a step of stabilizing the pellet-like pitch or the powder-like pitch, (d) a step of carbonizing the stabilized pitch to obtain a carbonized body, and (e) a step of activating the carbonized body to obtain a porous carbon support.

[0140] In the above step (a), pitch can be synthesized by thermal decomposition and polycondensation of petroleum-based raw materials.

[0141] In a specific embodiment of the present invention, the petroleum-based raw material may include at least one selected from the group consisting of pyrolysis fuel oil (PFO), naphtha cracking residue (NCB), ethylene cracker bottom oil (EBO), vacuum residue (VR), de-asphalted oil (DAO), atmospheric residue (AR), fluid catalytic cracking (FCC-DO) oil, residue fluid catalytic cracking decant oil (RFCC-DO), and heavy aromatic oil. In a preferred specific embodiment of the present invention, the petroleum-based raw material may include pyrolysis fuel oil.

[0142] In a specific embodiment of the present invention, the petroleum-based raw material may contain an aromatic compound in an amount of 10 to 90 wt%. Preferably, the petroleum-based raw material may contain an aromatic compound in an amount of 20 to 80 wt%, more preferably 30 to 70 wt%. When the content of the aromatic compound in the petroleum-based raw material satisfies the above range, even if the solid pitch pellets described below are stabilized, carbonized, and activated without separately pulverizing, a porous carbon support having controlled pore characteristics can be obtained.

[0143] In a specific embodiment of the present invention, the aromatic compound may be a compound having 1 to 4 aromatic rings. Specifically, the aromatic compound may include at least one selected from the group consisting of substituted or unsubstituted benzene, naphthalene, phenanthrene, indene, biphenyl, anthracene, tetralin, and fluorene. In this case, even if the solid pitch pellets described below are stabilized, carbonized, and activated without separately pulverizing, a porous carbon support having controlled pore characteristics can be obtained.

[0144] In a specific embodiment of the present invention, the thermal decomposition and polycondensation of the petroleum-based raw material can be carried out at a temperature of 350 to 500°C. In a preferred specific embodiment of the present invention, the thermal decomposition and polycondensation of the petroleum-based raw material can be carried out at a temperature of 400 to 500°C. In a more preferred specific embodiment of the present invention, the thermal decomposition and polycondensation of the petroleum-based raw material can be carried out at a temperature of 430 to 470°C. When the temperature of the thermal decomposition and polycondensation of the petroleum-based raw material is 350 to 500°C, a pitch containing a large amount of relatively low molecular weight components can be produced, and in the activation process of step (e) described below, components having relatively small molecular weights are vaporized first, thereby sufficiently forming mesopores in the carbon support. If the thermal decomposition and polycondensation temperature of petroleum-based raw materials is less than 350°C, it is difficult to manufacture pitch that is solid at room temperature, and if this temperature exceeds 500°C, the pitch contains a lot of relatively high molecular weight components, making it difficult to manufacture a carbon support having mesopores.

[0145] In a specific embodiment of the present invention, the thermal decomposition and polycondensation of the petroleum raw material may be performed under an atmosphere of an oxidizing gas, an inert gas, or a mixture thereof. In a preferred specific embodiment of the present invention, the oxidizing gas may be oxygen, ozone, or a combination thereof, the inert gas may be nitrogen, helium, neon, argon, or a combination thereof, and the mixture thereof may be air, but is not particularly limited thereto.

[0146] When an oxidizing gas is used during the thermal decomposition and polycondensation of petroleum-based raw materials, a pitch with a high softening point can be produced, but it is difficult to perform the thermal decomposition and polycondensation at high temperatures. When an inert gas is used during the thermal decomposition and polycondensation of petroleum-based raw materials, thermal decomposition and polycondensation can be performed at high temperatures, but it is difficult to produce a pitch with a relatively high softening point. When a mixed gas of an oxidizing gas and an inert gas is used during the thermal decomposition and polycondensation of petroleum-based raw materials, thermal decomposition and polycondensation can be performed at relatively high temperatures, thereby producing a pitch with a relatively high softening point.

[0147] In a specific embodiment of the present invention, the gas may be supplied at a flow rate of 10 to 800 ml / min during the thermal decomposition and polycondensation of a petroleum-based raw material. In a preferred specific embodiment of the present invention, the gas may be supplied at a flow rate of 100 to 500 ml / min during the thermal decomposition and polycondensation of a petroleum-based raw material. When the flow rate of the gas is less than 10 ml / min, the yield of the pitch increases, but the low molecular weight component increases too much, which is disadvantageous for subsequent processes (e.g., stabilization). When the flow rate of the gas exceeds 800 ml / min, the yield of the pitch may decrease.

[0148] In a specific embodiment of the present invention, the thermal decomposition and polycondensation of the petroleum-based raw material can be carried out for 1 to 10 hours. In a preferred embodiment of the present invention, the thermal decomposition and polycondensation of the petroleum-based raw material can be carried out for 2 to 8 hours. In a more preferred embodiment of the present invention, the thermal decomposition and polycondensation of the petroleum-based raw material can be carried out for 2 to 7 hours. If the thermal decomposition and polycondensation time of the petroleum-based raw material is less than 1 hour, it is difficult to produce a pitch having a high softening point, and if the thermal decomposition and polycondensation time of the petroleum-based raw material exceeds 10 hours, an excessive amount of quinoline-insoluble components may be produced.

[0149] In a specific embodiment of the present invention, the thermal decomposition and polycondensation of the petroleum-based raw material may be performed under stirring. The stirring conditions for the petroleum-based raw material are not particularly limited, but, for example, a stirrer rotating at 10 to 500 rpm may be used.

[0150] In a specific embodiment of the present invention, the pitch synthesized in step (a) may have a softening point of 200 to 350°C. In a preferred embodiment of the present invention, the pitch may have a softening point of 200 to 330°C. In a more preferred embodiment of the present invention, the pitch may have a softening point of 200 to 300°C. Since the pitch manufactured according to the present invention has a high softening point, when used as a precursor for manufacturing a carbon support, the stabilization process is easy, and a high yield can be obtained after carbonization and activation.

[0151] In a specific embodiment of the present invention, the yield of the pitch synthesized in step (a) may be 10 to 50 wt%. In a preferred embodiment of the present invention, the yield of the pitch may be 10 to 40 wt%. In a more preferred embodiment of the present invention, the yield of the pitch may be 20 to 30 wt%.

[0152] In a specific embodiment of the present invention, a step of pretreating the petroleum-based raw material may be performed prior to step (a). By removing low-boiling-point components contained in the petroleum-based raw material through the pretreating step, a pitch having a higher softening point can be produced.

[0153] In a specific embodiment of the present invention, the pretreatment step may be performed at a temperature equal to or lower than the thermal decomposition and polycondensation temperature of the petroleum-based raw material in step (a), but is not particularly limited to this condition. Specifically, the pretreatment step may be performed at 250 to 450°C, preferably 250 to 400°C, and more preferably 300 to 400°C.

[0154] In a specific embodiment of the present invention, the pretreatment step may be performed for a time equal to or shorter than the thermal decomposition and polycondensation time of the petroleum-based raw material in step (a), but is not particularly limited to this condition. Specifically, the pretreatment step may be performed for 1 to 8 hours, preferably 1 to 6 hours, and more preferably 1 to 5 hours.

[0155] Additionally, in the step (b), the pitch may be solidified and pelletized to obtain a pellet-like pitch, or the pitch may be solidified, pelletized, and pulverized to obtain a powder-like pitch.

[0156] First, in the case of the pellet-shaped pitch, the liquid pitch obtained in step (a) is solidified, for example, by extrusion and cooling, and then pelletized into a desired size to obtain solid pitch pellets (pellet-shaped pitch). The process of extruding, cooling, and pelletizing the liquid pitch to obtain solid pitch pellets can be performed using commercially available equipment. For example, this process can be performed using IPCO's Double Belt Cooler & Flaker, but is not particularly limited to this equipment.

[0157] The pitch pellets obtained in step (b) have an average particle size (particle size distribution D50) of 1 to 30 mm, preferably 5 to 25 mm. When the average particle size (particle size distribution D50) of the pitch pellets is within this range, a porous carbon support can be manufactured through stabilization, carbonization, and activation described below without separately pulverizing the pitch pellets.

[0158] In addition, in the case of the above-mentioned powdered pitch, the pitch pellets (pellet-shaped pitch) can be further crushed or pulverized and classified. The pitch pellets can be further finely divided through crushing or pulverization, and the particle size distribution of the pitch pellets can be made uniform through classification. Here, the classification can be dry classification, wet classification, or classification using a sieve. By crushing or pulverizing and classification, a powdered pitch having an average particle size (particle size distribution D50) of 50 to 500 μm can be obtained.

[0159] And, in step (c), a step of stabilizing the pellet-shaped pitch or powder-shaped pitch can be performed.

[0160] First, the pitch of the pitch pellet obtained in step (b) is first oxidized to stabilize the carbon structure of the pitch.

[0161] In a specific embodiment of the present invention, the stabilization of the pitch may be performed in an oxidizing gas atmosphere. In a preferred embodiment of the present invention, the stabilization of the pitch may be performed in an air atmosphere, but is not particularly limited thereto.

[0162] In a specific embodiment of the present invention, the stabilization of the pitch may be performed at a temperature of 100 to 500°C, preferably 150 to 300°C. When the stabilization of the pitch is performed at this temperature, the carbon structure within the pellet-shaped pitch or powder-shaped pitch changes from thermoplastic to thermosetting, so that the structure can be stably maintained during the subsequent carbonization process. At this time, the heating rate may be 2 to 10°C / min. If the heating rate is too slow, productivity may be poor, and if the heating rate is excessively fast, uniform stabilization treatment may be difficult.

[0163] In a specific embodiment of the present invention, the stabilization may be performed at a pressure of 0.1 to 10 bar, preferably 0.5 to 5 bar. When the stabilization is performed at this pressure, the structure of the pellet-shaped pitch or the carbon inside the powder-shaped pitch can be sufficiently stabilized.

[0164] In a specific embodiment of the present invention, the stabilization can be performed under conditions of a flow rate of an oxidizing gas, preferably air, of 0.1 to 500 ml / min, preferably 1 to 300 ml / min. When the stabilization is performed under these oxidizing gas flow rates, the structure of the carbon inside the pellet-shaped pitch or the powder-shaped pitch can be sufficiently stabilized.

[0165] In a specific embodiment of the present invention, the stabilization may be performed for 1 to 10 hours, preferably 2 to 8 hours. If the stabilization is performed for this period of time, the structure of the carbon within the pellet-shaped pitch or the powder-shaped pitch can be sufficiently stabilized.

[0166] And, in step (d), the stabilized pitch can be carbonized to obtain a carbonized body. Through carbonization of the stabilized pitch, other functional groups contained in the pitch are removed, and a carbonized body composed of substantially pure carbon can be obtained.

[0167] In a specific embodiment of the present invention, the carbonization may be performed under an inert gas atmosphere. In a preferred embodiment of the present invention, the carbonization may be performed under a nitrogen or argon atmosphere, but is not particularly limited thereto.

[0168] In a specific embodiment of the present invention, the carbonization may be performed at a temperature of more than 700°C and less than or equal to 1,000°C, preferably 800 to 900°C. If the temperature during the carbonization is lower than this range, carbonization may not be sufficiently performed, and if the temperature during the carbonization is higher than this range, the carbonization yield may decrease.

[0169] In a specific embodiment of the present invention, the carbonization may be performed under conditions of a flow rate of an inert gas, preferably nitrogen, of 0.1 to 30 ml / min, preferably 0.1 to 10 ml / min. When the carbonization is performed under these inert gas flow rates, the stabilized pitch can be sufficiently carbonized.

[0170] In a specific embodiment of the present invention, the carbonization may be performed for 0.5 to 5 hours, preferably 1 to 3 hours. If the carbonization is performed for this period of time, the stabilized pitch can be sufficiently carbonized.

[0171] And, in step (e), the carbonized body (carbonized pitch) is activated to obtain a porous carbon support. By activating the carbonized body, pores are formed in the pitch pellets, thereby obtaining a porous carbon support.

[0172] In a specific embodiment of the present invention, the activation of the carbonized body may be performed in an oxidizing gas atmosphere. In a preferred embodiment of the present invention, the activation of the carbonized body may be performed in a steam atmosphere, but is not particularly limited thereto.

[0173] In a specific example of the present invention, the activation of the carbonized body can be performed at a temperature of more than 700°C and less than or equal to 1,000°C, preferably 800 to 900°C. When the activation of the carbonized body is performed at this temperature, a porous carbon support in which micropores and mesopores are sufficiently formed can be obtained.

[0174] In a specific embodiment of the present invention, the activation of the carbonized body can be performed at a pressure of 0.1 to 10 bar, preferably 0.1 to 5 bar. When the activation of the carbonized body is performed at this pressure, a porous carbon support in which micropores and mesopores are sufficiently formed can be obtained.

[0175] In a specific embodiment of the present invention, the activation of the carbonized body can be performed under conditions of a flow rate of an oxidizing gas, preferably water vapor, of 0.1 to 100 ml / min, preferably 0.1 to 50 ml / min. When the activation of the carbonized body is performed under these oxidizing gas flow rates, a porous carbon support in which micropores and mesopores are sufficiently formed can be obtained.

[0176] In a specific embodiment of the present invention, the activation of the carbonized body may be performed for 0.5 to 5 hours, preferably 1 to 3 hours. When the activation of the carbonized body is performed for this period of time, a porous carbon support in which micropores and mesopores are sufficiently formed can be obtained.

[0177] In a specific embodiment of the present invention, the stabilization, carbonization, and activation of steps (c) to (e) above can each be performed in a microwave-assisted heating furnace. In a preferred embodiment of the present invention, the stabilization, carbonization, and activation of steps (c) to (e) above can all be performed in a microwave-assisted heating furnace. A microwave-assisted heating furnace is preferred because it can increase the temperature of the pitch itself without increasing the external temperature of the pitch, but is not particularly limited thereto.

[0178] In a specific embodiment of the present invention, the stabilization, carbonization, and activation of steps (c) to (e) above can be performed continuously in a single device. In a preferred embodiment of the present invention, the stabilization, carbonization, and activation of steps (c) to (e) above can be performed continuously in a single rotary kiln, but the device is not particularly limited thereto. By performing the stabilization, carbonization, and activation of steps (c) to (e) above continuously in a single device, optimization of the process can be achieved.

[0179] In a specific embodiment of the present invention, the porous carbon support obtained in step (e) can be further pulverized or ground and classified. The porous carbon support can be further finely divided through pulverization or ground, and the particle size distribution of the porous carbon support can be made uniform through classification. Here, the classification can be dry classification, wet classification, classification using a sieve, etc. By the pulverization or ground and classification treatment, a porous carbon support powder having an average particle diameter (particle size distribution D50) of 1 to 20 ㎛, a BET specific surface area of ​​300 to 3,000 m2 / g, and a tap density of 0.05 to 0.5 g / ㎖ can be obtained. In addition, the porous carbon support powder can have a volume ratio of mesopores having a pore size of 2 to 50 nm based on the total pore volume of 10 to 80%.

[0180] Meanwhile, in the case where the porous carbon support is obtained by stabilizing, carbonizing, and activating the pitch without further pulverizing in the above step (b), the carbon support may be pulverized (or further classified) to have an average particle size of 1 to 20 ㎛ (particle size distribution D50), but is not limited thereto.

[0181]

[0182] In addition, when the carbon support is hard carbon, the hard carbon can be manufactured by a method including the steps of (a') synthesizing pitch by thermal decomposition and condensation polymerization of petroleum-based raw materials, (b') solidifying and pelletizing the pitch to obtain pellet-like pitch, or solidifying, pelletizing, and pulverizing the pitch to obtain powder-like pitch, (c') stabilizing the pellet-like pitch or powder-like pitch, and (d') carbonizing the stabilized pitch to obtain hard carbon.

[0183] At this time, since the description of the above steps (a') to (d') may be the same as the description of the above steps (a) to (d), a detailed description will be omitted.

[0184] Meanwhile, the pitch for manufacturing the hard carbon may be at least one of an isotropic pitch and an anisotropic pitch, and it is more advantageous to achieve the purpose of the present invention to be an isotropic pitch.

[0185]

[0186] In addition, when the carbon support is soft carbon, the soft carbon can be manufactured by a method including the steps of (a) synthesizing pitch by thermal decomposition and condensation polymerization of a petroleum-based raw material, (b) solidifying and pelletizing the pitch to obtain a pellet-like pitch, or solidifying, pelletizing, and pulverizing the pitch to obtain a powder-like pitch, (c) stabilizing the pellet-like pitch or the powder-like pitch, and (d) carbonizing the stabilized pitch to obtain soft carbon.

[0187] At this time, since the description of the above steps (a”) and (b”) may be the same as the description of the above steps (a) and (b), a detailed description thereof will be omitted.

[0188] The above step (c”) and the step (d”) described below may be performed as a series of steps in a rotary kiln, as in the above-described steps (c) and (d), or may be performed as a series of steps by placing the product in a crucible and placing it in an oven. Preferably, it may be advantageous for achieving the purpose of the present invention to perform the series of steps by placing the product in a crucible and placing it in an oven.

[0189] Meanwhile, since the description of the contents other than the above step (c”) may be the same as the description of the above step (c), a detailed description will be omitted.

[0190] In addition, the above step (d”) is a step of carbonizing the stabilized pitch to obtain soft carbon, and through carbonization of the stabilized pitch, other functional groups included in the pitch are removed, and soft carbon composed of substantially pure carbon can be obtained.

[0191] In a specific embodiment of the present invention, the carbonization in step (d”) may be performed under an inert gas atmosphere. In a preferred embodiment of the present invention, the carbonization in step (d”) may be performed under a nitrogen or argon atmosphere, but is not particularly limited thereto.

[0192] In a specific embodiment of the present invention, the carbonization in step (d”) may be performed at a temperature of 1,000°C to 2,700°C, preferably 1,200°C to 2,200°C. If the temperature during the carbonization in step (d”) is lower than this range, the crystal structure of carbon may not develop sufficiently, and if the temperature during the carbonization is higher than this range, the carbonization yield may decrease.

[0193] In a specific embodiment of the present invention, the carbonization in step (d”) may be performed under a flow rate condition of an inert gas, preferably argon, of 0.1 to 30 ml / min, preferably 0.1 to 10 ml / min. When the carbonization is performed under this inert gas flow rate condition, the stabilized pitch can be sufficiently carbonized.

[0194] In a specific example of the present invention, the carbonization in step (d”) may be performed for 0.5 to 5 hours, preferably 1 to 3 hours. When the carbonization in step (d”) is performed for this period of time, the stabilized pitch can be sufficiently carbonized.

[0195] Meanwhile, since the description of the contents other than the above step (d”) may be the same as the description of the above step (d), a detailed description will be omitted.

[0196] Meanwhile, the pitch for manufacturing the soft carbon may be at least one of an isotropic pitch and an anisotropic pitch, and preferably, an anisotropic pitch may be more advantageous in achieving the purpose of the present invention.

[0197]

[0198] In a method for manufacturing a carbon / silicon-carbon composite according to an embodiment of the present invention, the obtained carbon / silicon-carbon composite may be crushed or pulverized and classified. Classification can achieve a uniform particle size distribution of the composite. Here, classification may be performed by dry classification, wet classification, or classification using a sieve.

[0199]

[0200] Negative active material

[0201] According to another embodiment of the present invention, a negative active material comprising the carbon / silicon-carbon composite is provided.

[0202] The negative electrode active material according to an embodiment of the present invention may further include a carbon-based negative electrode material, specifically a graphite-based negative electrode material, in addition to the carbon / silicon-carbon composite. For example, the negative electrode active material may be obtained by mixing the carbon / silicon-carbon composite according to an embodiment of the present invention with a carbon-based negative electrode material, for example, a graphite-based negative electrode material.

[0203] Here, the carbon-based negative electrode material may include, but is not particularly limited to, at least one selected from the group consisting of natural graphite, artificial graphite, soft carbon, hard carbon, mesocarbon, carbon fiber, carbon nanotube, pyrolytic carbon, coke, organic polymer compound sintered body, and carbon black.

[0204] The content of the carbon-based negative electrode material in the negative electrode active material according to an embodiment of the present invention may be 2 to 80 wt%, preferably 5 to 70 wt%, and more preferably 30 to 70 wt%, based on the total weight of the negative electrode active material.

[0205] The negative active material according to an embodiment of the present invention can be effectively used in manufacturing a secondary battery, specifically, a negative electrode of a lithium secondary battery and a negative electrode of an all-solid-state battery.

[0206]

[0207] All-solid-state batteries

[0208] According to another embodiment of the present invention, an all-solid-state battery comprising the carbon / silicon-carbon composite is provided.

[0209] The above-mentioned all-solid-state battery may be an all-solid-state battery including a positive electrode, a negative electrode, and a solid electrolyte between the positive electrode and the negative electrode, and the negative electrode may include a negative electrode active material layer, and may include a solid electrolyte interphase (SEI) film on at least a portion of the negative electrode active material particles of the negative electrode active material layer.

[0210] Meanwhile, the above-described negative electrode active material particles may be carbon-based negative electrode materials, and in this case, since the content may be the same as that described in the content of the above-described negative electrode active material, the related description will be omitted.

[0211] At this time, the SEI film may include the carbon / silicon-carbon composite described above. Alternatively, the solid electrolyte may include the carbon / silicon-carbon composite described above. By including the carbon / silicon-carbon composite described above in the SEI and / or the solid electrolyte, the electrochemical characteristics of the battery may be excellent.

[0212] In addition to the negative active material particles, SEI film, and solid electrolyte of the above-mentioned all-solid-state battery, the negative electrode configuration and positive electrode configuration can be applied to known all-solid-state battery configurations, and thus the present invention does not specifically limit them.

[0213]

[0214] The present invention is described in more detail by the following examples. The following examples are merely illustrative of the present invention and are not intended to limit the scope of the present invention.

[0215] [Example]

[0216] <Preparation Example: Preparation of a Porous Carbon Support>

[0217] 300 g of petroleum residual oil (YNCC, HTC PFO (pyrolysis fuel oil)) was placed in a reactor equipped with a stirrer, and pyrolysis and polycondensation were performed at 450°C for 3 hours while supplying nitrogen at a flow rate of 100 ml / min. During this time, the stirrer was rotated at a speed of 200 rpm to mix the reactants. The polymerized pitch was solidified and pelletized to obtain solid pitch pellets with an average particle size (particle size distribution D50) of 1–30 mm.

[0218] The solid pitch pellets obtained above were pulverized to produce pitch particles with an average particle size (particle size distribution D50) of 200 μm, and then placed in a rotary kiln with three zones to sequentially perform stabilization, carbonization, and activation. The conditions for stabilization, carbonization, and activation are as shown in Table 1 below.

[0219] The specific surface area of ​​the carbon support was measured using a Belsorp mini II according to ASTM D4820-93. The tap density of the carbon support was measured using a tap density analyzer (Electrolab, ETD-1020x) according to ASTM B527. The particle size distribution of the carbon support was measured using a particle size analyzer (Horiba, Laser Particle Analyzer, LA-960V2) according to ASTM E112. The results are shown in Table 1.

[0220] Step Condition Standard Example Stabilization temperature (℃) 300 hours (hr) 3 Atmospheric air Carbonization temperature (℃) 900 hours (hr) 1 Atmospheric nitrogen Activation temperature (℃) 900 hours (hr) 3 Water vapor flow rate (㎖ / min) 200 Support physical properties Particle size distribution D50 (㎛) 200 Specific surface area (㎡ / g) 1409.1 Tap density (g / ㎖) 0.44

[0221] The porous carbon support of the standard example was pulverized with a pulverizer (NETZSCH, air jet mill) to obtain a fine powder of the porous carbon support with a particle size distribution D50 of 7 ㎛.

[0222]

[0223] <Example 1: Formation of inorganic layer>

[0224] First, 5 g of a porous carbon support manufactured according to the preparation example was evenly spread and placed on a circular silicon wafer in a reactor, and an inorganic layer was formed on the surface of the porous carbon support and inside the pores under the conditions below (step (a)).

[0225] - First precursor: trimethyl aluminum (EG Chem)

[0226] - Second precursor: H2O (Millpore, Milli-Q)

[0227] - Precursor carrier gas: N2300 sccm

[0228] - First precursor average supply flow rate and time: 2 seconds

[0229] - Purging gas and time after supplying the first precursor: N2, 60 seconds

[0230] - Second precursor average supply flow rate and time: 2 seconds

[0231] - Purging gas and time after supplying the second precursor: N2, 60 seconds

[0232] - Pressure inside the reactor chamber: 1.2 Torr

[0233] - Surface temperature of the reactor mounting part (silicon wafer): 150℃

[0234] - Number of cycles: 9

[0235] - Formed inorganic layer: Al2O3

[0236] - Thickness of the inorganic layer: 1 nm

[0237]

[0238] <Example 2>

[0239] The same procedure as in Example 1 was followed, but the inorganic layer formation conditions were changed to form an inorganic layer on a carbon support.

[0240] - First precursor: trimethyl aluminum (EG Chem)

[0241] - Second precursor: H2O (Millpore, Milli-Q)

[0242] - Precursor carrier gas: N2300 sccm

[0243] - First precursor average supply flow rate and time: 2 seconds

[0244] - Purging gas and time after supplying the first precursor: N2, 60 seconds

[0245] - Second precursor average supply flow rate and time: 2 seconds

[0246] - Purging gas and time after supplying the second precursor: N2, 60 seconds

[0247] - Pressure inside the reactor chamber: 1.2 Torr

[0248] - Surface temperature of the reactor mounting part (silicon wafer): 150℃

[0249] - Number of cycles: 26

[0250] - Formed inorganic layer: Al2O3

[0251] - Thickness of the inorganic layer: 3 nm

[0252]

[0253] <Example 3>

[0254] The same procedure as in Example 1 was followed, but the inorganic layer formation conditions were changed to form an inorganic layer on a carbon support.

[0255] - First precursor: trimethyl aluminum (EG Chem)

[0256] - Second precursor: H2O (Millpore, Milli-Q)

[0257] - Precursor carrier gas: N2300 sccm

[0258] - First precursor average supply flow rate and time: 2 seconds

[0259] - Purging gas and time after supplying the first precursor: N2, 60 seconds

[0260] - Second precursor average supply flow rate and time: 2 seconds

[0261] - Purging gas and time after supplying the second precursor: N2, 60 seconds

[0262] - Pressure inside the reactor chamber: 1.2 Torr

[0263] - Surface temperature of the reactor mounting part (silicon wafer): 150℃

[0264] - Number of cycles: 42

[0265] - Formed inorganic layer: Al2O3

[0266] - Thickness of the inorganic layer: 5 nm

[0267]

[0268] <Comparative Example>

[0269] The porous carbon support of Preparation Example 1 above was prepared.

[0270]

[0271] Experimental Example 1

[0272] (1) X-ray photoelectron spectroscopy

[0273] For Examples 1 to 3 and Comparative Examples, the elements on the particle surface were analyzed using X-ray photoelectron spectroscopy (XPS) (Multilab 2000, Thermo). The results are shown in Fig. 2.

[0274] As a result, it was confirmed that aluminum was measured according to the thickness of Examples 1 to 3 in which an inorganic layer was formed, as shown in Fig. 2. Accordingly, it was confirmed that an inorganic layer was formed on the surface of the porous carbon support and inside the pores by the manufacturing method of the present invention.

[0275]

[0276] (2) Transmission electron microscope-energy dispersive optical analysis

[0277] Examples 1 to 3 were observed using a transmission electron microscope (TEM)-energy dispersive spectrometer (EDS) (Tecnai G2 F30 S-Twin, FEI company). The EDS analysis results are shown in Fig. 3 (Examples 1 and 2), and the TEM analysis results are shown in Fig. 4 (Example 3).

[0278] As a result, from the EDS analysis results of Fig. 3, it was confirmed that the Al inorganic layer was observed in a uniform area in Examples 1 and 2.

[0279] In addition, from the TEM photograph of Fig. 4, it was confirmed that a uniform thin film with an average thickness of 5 nm was formed in Example 3.

[0280] Therefore, it was qualitatively confirmed that a uniform inorganic layer was formed on the carbon support by the manufacturing method of the present invention.

[0281]

[0282] <Manufacturing Example 1>

[0283] 100 g of a porous carbon support having an inorganic layer formed thereon, manufactured according to Example 1, was placed in a rotary kiln, and silane (SiH4) gas was injected to form a silicon layer on the porous carbon support having an inorganic layer formed thereon, thereby manufacturing a carbon / silicon composite (step (1)). The conditions for forming the silicon layer are shown in Table 2 below.

[0284] Step-by-step example Silicon layer formation conditions Batch (g) 100 Pressure Normal pressure Temperature (℃) 475 Time (min) 60

[0285]

[0286] <Comparative Manufacturing Example 1>

[0287] A carbon / silicon composite was manufactured in the same manner as in Manufacturing Example 1, but the porous carbon support having an inorganic layer formed thereon according to Example 1 was changed to a porous carbon support according to Comparative Example.

[0288]

[0289] <Implementation Example 1>

[0290] For 100 parts by weight of the carbon / silicon composite manufactured according to Manufacturing Example 1, 22 parts by weight of pitch derived from petroleum residue was introduced into the reactor of a mechanofusion device, and then coating was performed for 15 minutes under conditions of a blade rotation speed of 2,700 rpm to manufacture a carbon / silicon composite coated with pitch.

[0291] Next, the carbon / silicon composite coated with pitch was placed in an electric furnace, heated at 5°C / min to 700°C, carbonization was performed at 700°C for 2 hours, and then slowly cooled to 25°C to produce a carbon / silicon-carbon composite in which a carbon film with a thickness of 100 nm was formed on the surface of the carbon / silicon composite particles.

[0292]

[0293] <Comparative Implementation Example 1>

[0294] The same procedure as in Example 1 was followed, but the carbon / silicon composite according to Manufacturing Example 1 was changed to a carbon / silicon composite according to Comparative Manufacturing Example 1 to produce a carbon / silicon-carbon composite.

[0295]

[0296] Experimental Example 2: Electrochemical Evaluation of Secondary Batteries

[0297] Half coin cells were manufactured using the carbon / silicon composites of Manufacturing Example 1 and Comparative Manufacturing Example 1, and the carbon / silicon-carbon composites of Embodiment Example 1 and Comparative Embodiment Example 1, respectively, as negative electrode materials, and Manufacturing Example 1, Comparative Manufacturing Example 1, Embodiment Example 1, and Comparative Embodiment Example 1 were performed as shown in Table 3.

[0298] A slurry was prepared by mixing carbon / silicon composite (or carbon / silicon-carbon composite): conductive material: binder in a ratio of 8:1:1. At this time, the conductive material used was super-P, and the binder used was a mixture of styrene butadiene rubber (SBR) and sodium carboxymethyl cellulose (CMC) in a weight ratio of 5:5.

[0299] Next, the slurry was uniformly applied to copper foil and dried in an 80°C oven for 1 hour. After the primary drying, the slurry was roll-pressed and dried in a 120°C vacuum oven for 6 hours and 30 minutes to manufacture a negative electrode plate.

[0300] A half coin cell was manufactured using the above-mentioned negative electrode and lithium foil as a counter electrode. A porous polyethylene film was used as a separator, and a CR2032 half coin cell (half cell) was manufactured under the conditions shown in Table 3 below.

[0301] The electrolyte was prepared by dissolving 1.3 M LiPF6 in a solvent containing ethylene carbonate (EC), ethyl methyl carbonate (EMC), and dimethyl carbonate (DMC) in a volume ratio of 3:5:2, and dissolving 10 wt% fluoro-ethylene carbonate (FEC), 0.2 wt% lithium tetrafluoroborate (LiBF4), 0.5 wt% vinylene carbonate (VC), and 1 wt% propane sulton (PS) as additives (see Table 3).

[0302] Composition (AM:CM:BM) 8:1:1 Area capacity (mAh / cm 2)1 Electrolyte 1.3M LiPF6 EC / EMC / DMC 3:5:2, FFC 10%, LiBF4 0.2%, 0.5% VC, 1% PS Cut-off voltage (V) Formation: 0.005 ~ 1.5, Cycle test: 0.005 ~ 1.5 C-rate (C) Formation: 0.1 ~ 0.1. 0.01 C cut-off (CV) at 0.005 V

[0303] In Table 3 above, AM, CM, and BM represent active material (carbon / silicon composite, or carbon / silicon-carbon composite), conductor (Super P carbon black), and binder (styrene-butadiene rubber / carboxymethyl cellulose 5:5), respectively, and EC, EMC, DMC, FEC, VC, and PS represent ethylene carbonate, ethyl methyl carbonate, dimethyl carbonate, fluoroethylene carbonate, vinylene carbonate, and propane sultone, respectively.

[0304] Electrochemical analysis was performed on the manufactured half coin cell under the following conditions.

[0305] Cut off voltage (V): 0.005 - 1.5V (Formation), 0.005 - 1.2V(Cycle)

[0306] Formation C-rate (C): 0.1C lithiation, 0.1C delithiation

[0307] Cycle C-rate (C): 0.5C lithiation, 0.5C delithiation

[0308] Classification Charge capacity (mAh / g) Discharge capacity (mAh / g) ICE (%) Cycle Retention (%) Cycle Manufacturing example 12419213888.48.150 Comparative manufacturing example 12465210685.4550 Implementation example 12353221994.359.850 Comparative implementation example 12413215790.148.250

[0309] As can be seen in Table 4 above, it was confirmed that the coin cell using Manufacturing Example 1, which is a carbon / silicon composite having an inorganic layer formed according to the present invention, has a higher initial coulombic efficiency (ICE) and an excellent cycle maintenance rate, enabling stable charging and discharging, compared to the coin cell using Comparative Manufacturing Example 1, which is a carbon / silicon composite having no inorganic layer formed.

[0310] In addition, it was confirmed that the embodiment 1 including the carbon thin film had significantly superior initial coulombic efficiency and cycle maintenance rate compared to the comparative embodiment 1 including the carbon thin film but not the inorganic layer.

[0311]

[0312] Although one embodiment of the present invention has been described above, the spirit of the present invention is not limited to the embodiment presented in this specification, and a person skilled in the art who understands the spirit of the present invention will be able to easily propose other embodiments by adding, changing, deleting, or adding components within the scope of the same spirit, but this will also be considered to fall within the spirit of the present invention.

Claims

1. Carbon support; Silicon disposed including the surface of the above carbon support; A carbon thin film disposed including the surface of the carbon support and the surface of the silicon; and A carbon / silicon-carbon composite comprising an inorganic layer disposed including at least one region of an interface phase between the carbon support and silicon and an interface phase between the silicon and carbon thin film.

2. In paragraph 1, The above carbon support is a carbon / silicon-carbon composite comprising a nonporous carbon support comprising at least one of hard carbon and soft carbon.

3. In paragraph 1, The above carbon support is a porous carbon support, The above silicon is arranged on the surface and inside the pores of the porous carbon support, The above carbon film is disposed on the surface of the porous carbon support, inside the pores and on the surface of the silicon, A carbon / silicon-carbon composite in which the inorganic layer is arranged to include at least one region among the interface phase between the porous carbon support and silicon and the interface phase between the silicon and carbon thin film.

4. In paragraph 3, The above porous carbon support is a carbon / silicon-carbon composite having a volume ratio of mesopores with a pore size of 2 to 50 nm of 10 to 80% based on the total pore volume.

5. In paragraph 3, The above porous carbon support is a carbon / silicon-carbon composite having a BET specific surface area of ​​300 to 3,000 m2 / g, a tap density of 0.05 to 0.5 g / ㎖, and a particle size distribution D50 of 1 to 20 ㎛.

6. In paragraph 1, The above inorganic layer is made of aluminum oxide (Al2O3), zinc oxide (ZnO), tin oxide (SnO2), hafnium oxide (HfO), zirconium oxide (ZrO2), titanium oxide (TiO2), silicon oxide (SiO2) and LLZO (Li7La3Zr2O). 12 ), LiPON(Li 2.9 PO 3.3 N 0.46 ), LAO(LiAlO2), LLTO(Li 0.33 La 0.56 A carbon / silicon-carbon composite comprising at least one member selected from the group consisting of TiO3).

7. In paragraph 1, A carbon / silicon-carbon composite having a thickness of 0.1 nm to 100 nm of the above-mentioned inorganic layer.

8. In paragraph 1, A carbon / silicon-carbon composite in which the above-mentioned inorganic layer is 0.01 to 10 wt% of the total weight of the carbon / silicon-carbon composite.

9. In paragraph 1, A carbon / silicon-carbon composite wherein the silicon is 5 to 80 wt% of the total weight of the carbon / silicon-carbon composite.

10. In paragraph 1, A carbon / silicon-carbon composite in which the above carbon film is 1 to 30 wt% of the total weight of the carbon / silicon-carbon composite. 11.(1) A step of manufacturing a carbon / silicon composite by forming silicon including the surface of a carbon support; and (2) a step of manufacturing a carbon / silicon-carbon composite by forming a carbon thin film including the surface of the carbon / silicon composite; (a) a step of forming an inorganic layer through atomic layer deposition (ALD) including the surface of the carbon support before the step (1) above, or (b) a step of forming an inorganic layer through atomic layer deposition (ALD) including the surface of the carbon / silicon composite between steps (1) and (2), or A method for producing a carbon / silicon-carbon composite comprising both steps (a) and (b) above.

12. In paragraph 11, step (a) is, (A-1) A step of supplying a first precursor to a reactor to form a first precursor multilayer including the surface of the carbon support, with at least a portion of the first precursor adsorbed thereon; (A-2) A step of purging the inside of the reactor to remove the unadsorbed first precursor from the first precursor multilayer to form a first precursor monolayer; (A-3) a step of supplying a second precursor to a reactor, reacting the first precursor monolayer with at least a portion of the second precursor to form a composite layer; and (A-4) A method for manufacturing a carbon / silicon-carbon composite, comprising: a step of purging the inside of a reactor to remove unreacted second precursor from the composite layer and form an inorganic layer; and performing the cycle at least once.

13. In paragraph 11, step (b) is, (Me-1) A step of supplying a first precursor to a reactor to form a first precursor multilayer including a surface of the carbon / silicon composite, with at least a portion of the first precursor adsorbed thereon; (Na-2) A step of purging the inside of the reactor to remove the unadsorbed first precursor from the first precursor multilayer to form a first precursor monolayer; (Na-3) A step of supplying a second precursor to a reactor, reacting the first precursor monolayer with at least a portion of the second precursor to form a composite layer; and (Na-4) A method for manufacturing a carbon / silicon-carbon composite, comprising: a step of purging the inside of a reactor to remove unreacted second precursor from the composite layer and form an inorganic layer; and performing the cycle at least once.

14. In paragraph 12 or 13, A method for manufacturing a carbon / silicon-carbon composite, wherein the time for supplying the first precursor and the time for supplying the second precursor are each independently 1 to 600 seconds.

15. In paragraph 12 or 13, A method for producing a carbon / silicon-carbon composite, wherein the first precursor comprises at least one selected from the group consisting of trimethyl aluminum, diethylzinc, zinc acetate, tetrakis(dimethylamino)tin(IV), butoxytris(ethylmethylamido)hafnium, titanium isopropoxide, diisopropylaminosilane, and LiOtBu (lithium tert-butoxide).

16. In paragraph 12 or 13, A method for producing a carbon / silicon-carbon composite, wherein the second precursor comprises at least one selected from the group consisting of H2O, O3, H2O plasma, O3 plasma, and O2 plasma.

17. In paragraph 12 or 13, A method for manufacturing a carbon / silicon-carbon composite, wherein the above cycle is performed 1 to 1000 times.

18. In paragraph 12 or 13, A method for manufacturing a carbon / silicon-carbon composite, wherein the temperature of the carbon support and the carbon / silicon composite is maintained at 90 to 400°C during the above cycle.

19. Carbon / silicon-carbon composite according to any one of claims 1 to 10; and A negative electrode active material comprising a carbon-based negative electrode material.

20. An all-solid-state battery comprising a carbon / silicon-carbon composite according to any one of claims 1 to 10.

21. In paragraph 20, The above all-solid-state battery is an all-solid-state battery including the carbon / silicon-carbon composite in at least one of an SEI (Solid Electrolyte Interphase) film and a solid electrolyte.

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