Particle removal method and apparatus

Abstract

Provided in the present invention are a particle removal method and apparatus. The particle removal method comprises the following steps: providing a substrate (40) from which surface particles (50) are to be removed; switching the substrate (40) between a low-temperature state and a high-temperature state several times, so as to generate a thermal stress at the interface between the substrate (40) and the particles (50) on the surface thereof; and maintaining the substrate (40) in the low-temperature state or the high-temperature state, and correspondingly blowing an ionized high-pressure hot gas or high-pressure cold gas to the surface of the substrate (40), such that kinetic energy and a repulsive force are provided by means of the high-pressure hot gas or the high-pressure cold gas to detach the particles (50) from the substrate (40). The particle removal method can quickly and completely remove particles from the surface of a substrate, and has the beneficial effects of a high level of particle removal efficiency and a good particle removal effect, thereby facilitating an increase in the production efficiency of semiconductor manufacturing and a saving in the production costs of semiconductor manufacturing.

Description

Particle removal method and apparatus Technical Field

[0001] This invention relates to the field of integrated circuit manufacturing technology, and in particular to a particle removal method and apparatus. Background Technology

[0002] With the development of the semiconductor manufacturing industry, the linewidth of integrated circuits is becoming increasingly smaller, and particulate contamination has an increasingly significant impact on yield. Effective process particulate contamination control is crucial for improving yield. Therefore, it is necessary to effectively control particulate contamination that affects yield during the production process.

[0003] Generally, surface particulate contamination on various substrates (such as quartz substrates, mask substrates, photomasks, and silicon wafers) used in semiconductor manufacturing processes is a significant factor contributing to product yield loss. To minimize the impact of substrate surface particles on product yield, surface particle removal is necessary. Traditionally, N2 purging is commonly used to remove particles. However, for particles with strong adhesion, N2 purging has limited efficiency, and particles easily leave scratches on the substrate surface during purging, causing secondary contamination. Therefore, traditional substrate surface particle removal methods cannot quickly and effectively remove particles from the substrate surface, resulting in poor particle removal performance and impacting semiconductor manufacturing efficiency and costs. Technical issues

[0004] The purpose of this invention is to provide a particle removal method and apparatus to solve the technical problem that traditional substrate surface particle removal methods have poor particle removal effects, which affect the production efficiency and production cost of semiconductor manufacturing. Summary of the Invention

[0005] The purpose of this invention is to provide a particle removal method and apparatus to solve the technical problem that traditional substrate surface particle removal methods have poor particle removal effects, which affect the production efficiency and production cost of semiconductor manufacturing.

[0006] To achieve the above objectives, the present invention provides a particle removal method, comprising the following steps:

[0007] Provide a substrate from which surface particles are to be removed;

[0008] The substrate is switched between low temperature and high temperature states several times to create thermal stress at the interface between the substrate and the particles on its surface.

[0009] The substrate is kept at a low or high temperature, and ionized high-pressure hot gas or high-pressure cold gas is blown onto the substrate surface accordingly. The high-pressure hot gas or high-pressure cold gas provides kinetic energy and repulsive force to make the particles leave the substrate.

[0010] The aforementioned particle removal method first switches the substrate between a low-temperature state and a high-temperature state several times, then correspondingly blows ionized high-pressure hot gas or high-pressure cold gas onto the substrate surface to remove the particles. Because the coefficient of thermal expansion of the particles differs from that of the substrate, thermal stress is generated at the interface between the substrate and the particles after several cycles of heating and cooling, thereby reducing the adhesion of the particles. Subsequently, the substrate is kept at a low-temperature state or a high-temperature state, and correspondingly, ionized high-pressure hot gas or high-pressure cold gas is blown onto the substrate surface. Specifically, if the substrate is kept at a low-temperature state, ionized high-pressure hot gas is blown onto the substrate surface; if the substrate is kept at a high-temperature state, ionized high-pressure cold gas is blown onto the substrate surface to enhance the thermal stress at the interface between the substrate and the particles. Simultaneously, the high-pressure gas provides kinetic energy to the particles, causing them to move with the airflow and leave the substrate surface.

[0011] Furthermore, ionized high-pressure hot or cold gas can charge the particles, causing the particles and the high-pressure hot or cold gas to carry the same polarity of charge. This, in turn, causes the high-pressure hot or cold gas to exert a repulsive force on the particles, enabling them to leave the substrate surface more quickly and ensuring rapid and complete removal of particles from the substrate surface. In addition, the above-described particle removal method first reduces particle adhesion through a temperature-cooling cycle before high-pressure gas purging, preventing scratches from being left on the substrate during particle removal and effectively avoiding secondary contamination.

[0012] In summary, the particle removal method described above can quickly and completely remove particles from the substrate surface, and has the beneficial effects of high particle removal efficiency and good removal effect, which helps to improve the production efficiency of semiconductor manufacturing and save the production cost of semiconductor manufacturing.

[0013] In one embodiment, after the step of using high-pressure hot gas or high-pressure cold gas to provide kinetic energy and repulsive force to cause the particles to leave the substrate, the step further includes: collecting the particles that have left the substrate to remove the particles.

[0014] In one embodiment, after the step of switching the substrate between a low temperature state and a high temperature state several times to form thermal stress at the interface between the substrate and the particles on its surface, the method further includes the step of rotating the substrate at a speed of no more than 1000 rpm.

[0015] In one embodiment, when in a low-temperature state, the temperature of the substrate is -200°C to 10°C; when in a high-temperature state, the temperature of the substrate is 100°C to 200°C.

[0016] In one embodiment, the temperature of the high-pressure hot gas is 100°C to 200°C, and the temperature of the high-pressure cold gas is -200°C to 10°C.

[0017] In one embodiment, the gas pressure of the high-pressure hot gas or high-pressure cold gas is 1 atm to 10 atm.

[0018] In one embodiment, the high-pressure hot gas or high-pressure cold gas is N2, CO2, or an inert gas.

[0019] In one embodiment, the angle between the blowing direction of the high-pressure hot gas or high-pressure cold gas and the surface of the substrate is no greater than 45°.

[0020] On the other hand, the present invention also provides a particle removal device, comprising:

[0021] Main body of the cleanroom;

[0022] A chuck, located inside the main body of the cleaning chamber, is used to hold a substrate of surface particles to be removed. The chuck is equipped with a cooling coil or a heater.

[0023] The nozzle is mounted on the main body of the cleaning chamber and is located above the chuck. The nozzle is used to blow ionized high-pressure hot gas or high-pressure cold gas onto the substrate.

[0024] In one embodiment, the particle removal device further includes a pumping device connected to the main body of the cleanroom.

[0025] In one embodiment, the chuck is configured to be movable relative to the nozzle;

[0026] And / or,

[0027] The nozzle is configured to move relative to the chuck.

[0028] The particle removal device described above is used to implement the particle removal method described above. It has the beneficial effects of high particle removal efficiency and good removal effect, which helps to improve the production efficiency of semiconductor manufacturing and save the production cost of semiconductor manufacturing. Attached Figure Description

[0029] Figure 1 is a schematic diagram of a particle removal device according to an embodiment;

[0030] Figure 2 is a flowchart illustrating the particle removal method of one embodiment.

[0031] Explanation of reference numerals in the attached figures:

[0032] 10-Cleanroom main body, 20-Chuck, 30-Nozzle, 40-Base plate, 50-Particles, 60-Extraction device. Detailed Implementation

[0033] In the following description, numerous specific details are set forth in order to provide a more thorough understanding of the invention. However, it will be apparent to those skilled in the art that the invention may be practiced without one or more of these details. In other instances, certain technical features well-known in the art have not been described in order to avoid confusion with the invention. It should be understood that the invention can be implemented in various forms and should not be construed as limited to the embodiments set forth herein. Rather, providing these embodiments will make the disclosure thorough and complete, and will fully convey the scope of the invention to those skilled in the art. The same reference numerals denote the same elements throughout. It should be understood that when a layer is referred to as being formed on other layers, it may be formed directly on the other layers, or there may be intervening film layers. The terms “upper,” “lower,” “front,” “back,” etc., indicating orientation or positional relationship based on the orientation or positional relationship shown in the drawings, are only for the convenience of describing the invention and simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the invention, wherein “longitudinal” can be understood as a direction perpendicular to the substrate surface, and “lateral” can be understood as a direction parallel to the substrate surface. When used herein, the singular forms "a," "an," and "the" are also intended to include the plural forms, unless the context clearly indicates otherwise. It should also be understood that the term "comprising" is used to identify the presence of features, steps, operations, elements, and / or components, but does not exclude the presence or addition of one or more other features, steps, operations, elements, components, and / or groups. When used herein, the term "and / or" includes any and all combinations of the associated listed items. The terms "identical," "equal," and "consistent" include the meaning of being completely equal and identical, and may also include the meaning of being approximately identical or approximately equal within permissible process tolerances. The terms "first," "second," etc., in the specification are used to distinguish between similar elements and are not necessarily used to describe a particular order or chronological sequence. It should be understood that these terms, as used herein, may be replaced where appropriate, for example, to enable the embodiments of the invention described herein to operate in a different order than that described or shown herein. Similarly, if the methods described herein comprise a series of steps, and the order of these steps presented herein is not necessarily the only possible order in which these steps can be performed, and some of the described steps may be omitted and / or some other steps not described herein may be added to the method. If a component in one figure is the same as a component in another figure, although these components are easily identifiable in all figures, this specification will not label all identical components in every figure for the sake of clarity of description.

[0034] The present invention will be described more clearly and completely by way of embodiments and in conjunction with the accompanying drawings, but the present invention is not limited to the scope of the following embodiments.

[0035] Please refer to Figure 1. A particle removal method according to one embodiment includes the following steps:

[0036] Step S11: Provide a substrate with surface particles to be removed.

[0037] Specifically, the substrate surface has particles, and the coefficient of thermal expansion of the particles on the substrate surface is different from that of the substrate. The coefficient of thermal expansion of the particles is greater than or less than that of the substrate. In this embodiment, the substrate can be various substrates, preferably various substrates used in various processes of semiconductor manufacturing (such as quartz substrates, mask substrates, photomasks, silicon wafers, etc.). For ease of explanation, the following embodiment uses the application of the particle removal method and apparatus of the present invention to remove particles on a quartz substrate as an example.

[0038] Step S12: The substrate is switched between a low temperature state and a high temperature state several times to form thermal stress at the interface between the substrate and the particles on its surface.

[0039] Specifically, the thermal expansion coefficients of the substrate and the particles are different, and the deformation amounts of the two as temperature changes are different. For example, in this embodiment, the thermal expansion coefficient of the quartz substrate is low, while the thermal expansion coefficient of the particles is greater than that of the quartz substrate. During the thermal cycling process, the quartz substrate basically does not deform, while the particles undergo continuous and significant deformation. As a result, thermal stress is formed at the interface between the particles and the quartz substrate after the thermal cycling, which loosens the connection between the particles and the substrate, greatly reducing the adhesion between the particles and the substrate, and making the particles easy to remove.

[0040] Step S13: Keep the substrate at a low temperature or a high temperature, and blow ionized high-pressure hot gas or high-pressure cold gas onto the substrate surface accordingly. The high-pressure hot gas or high-pressure cold gas provides kinetic energy and repulsive force to make the particles leave the substrate.

[0041] Specifically, after completing the substrate's thermal cycling, the substrate is switched to a low-temperature state or a high-temperature state. Then, ionized high-pressure hot gas or high-pressure cold gas is blown onto the substrate surface accordingly. If the substrate switches back to a low-temperature state, ionized high-pressure hot gas is blown onto the substrate surface; if the substrate switches to a state maintaining a high temperature, ionized high-pressure cold gas is blown onto the substrate surface. By blowing high-pressure hot gas onto a cold substrate or high-pressure cold gas onto a hot substrate, the thermal stress at the interface between the substrate and the particles can be enhanced, thereby strengthening the adhesion of the particles. Simultaneously, the high-pressure gas provides kinetic energy to the particles, causing the low-adhesion particles to move with the airflow and leave the substrate surface.

[0042] In this embodiment, ionized high-pressure hot gas or high-pressure cold gas is used to purge the substrate surface. The ionized high-pressure hot gas or high-pressure cold gas charges the particles, causing the particles and the high-pressure hot gas or high-pressure cold gas to carry the same polarity of charge. This results in the high-pressure hot gas or high-pressure cold gas exerting a repulsive force on the particles, causing them to leave the substrate surface more quickly and ensuring rapid and complete removal of particles from the substrate surface. Specifically, the ionized high-pressure hot gas or high-pressure cold gas carries a single polarity of charge (either positive or negative). Taking a positively charged high-pressure hot gas or high-pressure cold gas as an example, if the particles on the substrate are positively charged, the high-pressure hot gas or high-pressure cold gas exerts a repulsive force to push the particles away. If the particles on the substrate are uncharged, the high-pressure hot gas or high-pressure cold gas purges them to become positively charged, and then exerts a repulsive force to push them away. If the particles on the substrate are negatively charged, the negative charge of the particles is first neutralized by the high-pressure hot gas or high-pressure cold gas, and then the high-pressure hot gas or high-pressure cold gas causes the particles to become positively charged, and then exerts a repulsive force to push the particles away. Furthermore, the principle of removing particles by high-pressure hot gas or high-pressure cold gas carrying a negative charge is the same as the principle of removing particles by high-pressure hot gas or high-pressure cold gas carrying a positive charge, and will not be repeated here. Moreover, in practical applications, the polarity of the charge carried by the high-pressure hot gas or high-pressure cold gas can be arbitrarily selected as needed; this embodiment does not impose specific limitations.

[0043] The aforementioned particle removal method first switches the substrate between a low-temperature state and a high-temperature state several times, then correspondingly blows ionized high-pressure hot gas or high-pressure cold gas onto the substrate surface to remove the particles. Because the coefficient of thermal expansion of the particles differs from that of the substrate, thermal stress is generated at the interface between the substrate and the particles after several cycles of heating and cooling, thus reducing particle adhesion. Subsequently, the substrate is kept at a low-temperature or high-temperature state, and correspondingly, ionized high-pressure hot gas or high-pressure cold gas is blown onto the substrate surface to enhance the thermal stress at the interface between the substrate and the particles. Simultaneously, the high-pressure gas provides kinetic energy to the particles, causing them to move with the airflow and leave the substrate surface.

[0044] Furthermore, ionized high-pressure hot or cold gas can charge the particles, causing the particles and the high-pressure hot or cold gas to carry the same polarity of charge. This, in turn, causes the high-pressure hot or cold gas to exert a repulsive force on the particles, enabling them to leave the substrate surface more quickly and ensuring rapid and complete removal of particles from the substrate surface. In addition, the above-described particle removal method first reduces particle adhesion through a temperature-cooling cycle before high-pressure gas purging, preventing scratches from being left on the substrate during particle removal and effectively avoiding secondary contamination.

[0045] In summary, the particle removal method described above can quickly and completely remove particles from the substrate surface, and has the beneficial effects of high particle removal efficiency and good removal effect, which helps to improve the production efficiency of semiconductor manufacturing and save the production cost of semiconductor manufacturing.

[0046] In one embodiment, after step S13, in which kinetic energy and repulsive force are provided by high-pressure hot gas or high-pressure cold gas to make the particles leave the substrate, the following step is further included: collecting the particles that have left the substrate to remove the particles. Specifically, while blowing high-pressure hot gas or high-pressure cold gas onto the substrate surface, the particles that have left the substrate are collected by exhausting gas through an exhaust device to remove the particles and prevent them from falling back onto the substrate after leaving it, causing secondary pollution.

[0047] In one embodiment, after step S12, the following step is further included: rotating the substrate at a speed not exceeding 1000 rpm. Specifically, during the process of blowing high-pressure hot gas or high-pressure cold gas onto the substrate surface, the substrate remains in a rotating state. The rapid rotation of the substrate will cause particles on its surface to be flung out and dispersed, thereby allowing the particles to leave the substrate more quickly and helping to further improve the particle removal efficiency. Furthermore, to avoid mechanical wear caused by excessively rapid substrate rotation, resulting in particle contamination of the substrate surface, the rotation speed of the substrate is preferably not greater than 1000 rpm.

[0048] In one embodiment, the substrate temperature is -200℃ to 10℃ when in a low-temperature state, and 100℃ to 200℃ when in a high-temperature state. In this embodiment, the temperature difference between the low-temperature and high-temperature states is not less than 90℃, and the substrate temperature change has a rapid ramp rate, which enables particles with a large coefficient of thermal expansion or the substrate (in this embodiment) to quickly and effectively deform. This accelerates the accumulation of thermal stress at the interface between the substrate and the particles, and can quickly reduce the adhesion of the particles. The substrate can complete the thermal change cycle by switching between the low-temperature and high-temperature states 3 to 5 times, which can effectively reduce the number of thermal change cycles of the substrate, improve particle removal efficiency, and save particle removal costs. Furthermore, the substrate temperature is not lower than 100℃ in the high-temperature state, which can effectively prevent water vapor from forming on the substrate surface.

[0049] In one embodiment, the temperature of the high-pressure hot gas is 100°C to 200°C, and the temperature of the high-pressure cold gas is -200°C to 10°C. Specifically, when the substrate is kept at a low temperature, ionized high-pressure hot gas is blown onto the substrate surface; when the substrate is kept at a high temperature, ionized high-pressure cold gas is blown onto the substrate surface. This embodiment uses either high-pressure hot gas at 100°C to 200°C or high-pressure cold gas at -200°C to 10°C to ensure that the temperature difference between the particles on the substrate surface and the substrate temperature is maintained at no less than 90°C. This ensures that the thermal stress at the interface between the substrate and the particles is effectively enhanced during the purging process, thereby ensuring a continuous and effective reduction in particle adhesion during purging.

[0050] In one embodiment, the gas pressure of the high-pressure hot gas or high-pressure cold gas is 1 atm to 10 atm. The pressurized gas can provide sufficient kinetic energy to the particles, and a gas pressure of no more than 10 atm is beneficial for cost savings. Furthermore, to further save costs, the gas pressure of the high-pressure hot gas or high-pressure cold gas is preferably no more than 5 atm.

[0051] In one embodiment, the high-pressure hot gas or high-pressure cold gas is N2, CO2, or an inert gas. In this embodiment, using N2, CO2, or an inert gas to purge the substrate can effectively avoid contamination from impurities during the purging process, resulting in good cleaning performance. Furthermore, to effectively save costs, N2 or CO2 is preferably used as the high-pressure hot gas or high-pressure cold gas.

[0052] In one embodiment, to reduce energy loss and ensure that the high-pressure hot gas or high-pressure cold gas provides sufficient kinetic energy to the particles, the angle between the blowing direction of the high-pressure hot gas or high-pressure cold gas and the surface of the substrate is no greater than 45°.

[0053] The present invention also provides a particle removal device. Please refer to 2. One embodiment of the particle removal device includes a cleaning chamber body 10, a chuck 20 and a nozzle 30. The chuck 20 is disposed in the cleaning chamber body 10 and is used to carry a substrate 40 on which surface particles 50 to be removed are disposed. A cooling coil or a heater is disposed on the chuck 20. The nozzle 30 is disposed on the cleaning chamber body 10 and is located above the chuck 20. The nozzle 30 is used to blow ionized high-pressure hot gas or high-pressure cold gas onto the substrate 40.

[0054] Specifically, the aforementioned particle removal device heats or cools the substrate 40 using a chuck 20 and nozzles 30, switching the substrate 40 between a low-temperature state and a high-temperature state. When a cooling coil is provided on the chuck 20, the nozzles 30 blow ionized high-pressure hot gas onto the substrate 40, cooling the chuck 20 through the cooling coil to cool the substrate 40, thus placing the substrate 40 at a low-temperature state. Correspondingly, the nozzles 30 blow high-pressure hot gas onto the substrate 40 to heat it, switching the substrate 40 to a high-temperature state. The alternating operation of the cooling chuck 20 and nozzles 30 achieves the switching between the low-temperature and high-temperature states of the substrate 40. Similarly, when a heater is provided on the chuck 20, the nozzles 30 blow ionized high-pressure cold gas onto the substrate 40, heating the chuck 20 through the heater to heat the substrate 40, placing the substrate 40 at a high-temperature state. The nozzles 30 blow high-pressure cold gas onto the substrate 40 to cool it, switching the substrate 40 to a low-temperature state. The alternating operation of the heater and nozzles 30 achieves the switching between the high-temperature and low-temperature states of the substrate 40.

[0055] In this embodiment, for ease of explanation, the specific working process of the above-mentioned particle removal device is described using an example where the chuck 20 is equipped with a cooling coil and the nozzle 30 blows ionized high-pressure hot gas onto the substrate 40. When using the above-mentioned large particle removal device, the cooling coil is first activated to cool the substrate 40. After the substrate 40 reaches a cooled state, the cooling coil is turned off, and the nozzle 30 is activated to blow ionized high-pressure hot gas onto the substrate 40 to heat the substrate 40. After the substrate 40 switches to a high-temperature state, the nozzle 30 is turned off, and the cooling coil is activated again. This alternating activation of the cooling coil and the nozzle 30 switches the substrate 40 between a low-temperature state and a high-temperature state, thereby generating thermal stress at the interface between the substrate 40 and the particles 50 and reducing the adhesion of the particles 50. After reaching the preset number of switching cycles, the cooling coil and nozzle 30 are simultaneously activated. The cooling coil keeps the substrate 40 at a low temperature, while the high-pressure hot gas ejected from the nozzle 30 keeps the particles 50 on the surface of the substrate 40 at a high temperature, thereby increasing the thermal stress at the interface between the substrate 40 and the particles 50. Simultaneously, the high-pressure gas provides kinetic energy to the particles 50, causing them to move with the airflow and leave the surface of the substrate 40, thus blowing away the particles 50 and removing them from the surface of the substrate 40. Furthermore, the ionized high-pressure hot gas can charge the particles 50, causing them and the high-pressure hot gas to carry the same polarity of charge. This results in the high-pressure hot gas exerting a repulsive force on the particles 50, causing them to leave the substrate 40 surface more quickly, ensuring rapid and complete removal of the particles 50 from the substrate 40 surface. In addition, the particle removal device in this embodiment first reduces the adhesion of the particles 50 through a cooling and heating cycle before performing high-pressure gas purging. During the particle removal process, no scratches are left on the substrate 40, effectively avoiding secondary contamination.

[0056] This embodiment uses a chuck 20 equipped with a cooling coil and a nozzle 30 blowing high-pressure hot gas onto a substrate 40 as an example to illustrate the specific working process of the particle removal device. When a heater is installed on the chuck 20 and an ionized high-pressure cold gas is blown onto the substrate 40 by the nozzle 30, the working process and principle are the same as in this embodiment, and will not be repeated here.

[0057] In one embodiment, when in a low-temperature state, the temperature of the substrate 40 is -200°C to 10°C; when in a high-temperature state, the temperature of the substrate 40 is 100°C to 200°C. Further, the high-pressure hot gas or high-pressure cold gas is N2, CO2, or an inert gas, and the gas pressure of the high-pressure hot gas or high-pressure cold gas is 1 atm to 10 atm, wherein the temperature of the high-pressure hot gas is 100°C to 200°C, and the temperature of the high-pressure cold gas is -200°C to 10°C. Even further, the ionized high-pressure hot gas or high-pressure cold gas carries a single polarity charge (carrying only positive charge or only negative charge).

[0058] In one embodiment, the particle removal device further includes an extraction device 60 connected to the cleaning chamber body 10. Specifically, the extraction device 60 communicates with the cleaning chamber and is used to extract gas from the cleaning chamber body 10 to collect particles 50 leaving the substrate 40 and maintain pressure within the cleaning chamber. This embodiment effectively removes particles 50 by collecting them from the substrate 40 and discharging them outside the cleaning chamber, thus preventing secondary contamination from the particles falling back onto the substrate 40 after leaving it. Further, in one embodiment, the extraction device 60 includes a filter to collect particles 50, preventing them from being discharged into the external environment and polluting it.

[0059] In one embodiment, the chuck 20 rotates at a speed not exceeding 1000 rpm. Specifically, the rotation of the chuck 20 drives the substrate 40 to rotate. During the process of blowing high-pressure hot gas or high-pressure cold gas onto the surface of the substrate 40, the substrate 40 remains in a rotating state. The rapid rotation of the substrate 40 causes the particles 50 on its surface to be flung out, causing the particles 50 to scatter, thereby allowing the particles 50 to leave the substrate 40 more quickly and helping to further improve the particle removal efficiency. Furthermore, to avoid mechanical wear caused by excessively rapid rotation of the substrate 40, resulting in particle contamination of the substrate surface, the rotation speed of the substrate 40 is preferably not greater than 1000 rpm.

[0060] In one embodiment, to reduce energy loss and ensure that the high-pressure hot gas or high-pressure cold gas provides sufficient kinetic energy to the particles 50, the angle α between the blowing direction of the nozzle 30 and the surface of the substrate 40 is not greater than 45°.

[0061] In one embodiment, the chuck is configured to move relative to the nozzle. The movement of the chuck causes the substrate located thereon to move relative to the nozzle, thereby completing the cleaning of the entire surface of the substrate by the nozzle, ensuring the substrate is clean. Furthermore, in another embodiment, the nozzle is configured to move relative to the chuck. The movement of the nozzle above the chuck allows it to clean the entire surface of the substrate, ensuring the substrate is clean. In this embodiment, the nozzle is small in size and requires little moving space. Compared to a moving chuck, a moving nozzle effectively saves moving space, significantly reducing the size of the particle removal device and facilitating miniaturization.

[0062] In the above embodiments, the entire surface of the substrate is purged by fixing the nozzle and moving the chuck to move the substrate relative to the nozzle, or by fixing the chuck and moving the nozzle above the chuck. However, it should be noted that in other embodiments, the chuck and nozzle can also move simultaneously to purge the entire surface of the substrate. The simultaneous relative movement of the chuck and substrate can quickly complete the purging of the entire surface of the substrate, saving purging time and improving particle removal efficiency.

[0063] In summary, the particle removal device described above is used to implement the particle 50 removal method described above. It has the beneficial effects of high particle 50 removal efficiency and good removal effect, which helps to improve the production efficiency of semiconductor manufacturing and save the production cost of semiconductor manufacturing.

[0064] The above description is merely a description of preferred embodiments of the present invention and is not intended to limit the scope of the present invention in any way. Any changes or modifications made by those skilled in the art based on the above disclosure shall fall within the scope of the present invention.

Claims

1. A method for removing particles, characterized in that, Includes the following steps: Provide a substrate from which surface particles are to be removed; The substrate is switched between a low temperature state and a high temperature state several times to form thermal stress at the interface between the substrate and the particles on its surface. The substrate is kept at a low temperature or a high temperature, and ionized high-pressure hot gas or high-pressure cold gas is blown onto the surface of the substrate accordingly. The high-pressure hot gas or high-pressure cold gas provides kinetic energy and repulsive force to make the particles leave the substrate.

2. The particle removal method according to claim 1, characterized in that, After the step of using the high-pressure hot gas or the high-pressure cold gas to provide kinetic energy and repulsive force to make the particles leave the substrate, the method further includes the step of collecting the particles that have left the substrate to remove the particles.

3. The particle removal method according to claim 1, characterized in that, After the step of switching the substrate between a low temperature state and a high temperature state several times to form thermal stress at the interface between the substrate and the particles on its surface, the method further includes the step of rotating the substrate at a speed not exceeding 1000 rpm.

4. The particle removal method according to claim 1, characterized in that, When in the low-temperature state, the temperature of the substrate is -200℃ to 10℃; when in the high-temperature state, the temperature of the substrate is 100℃ to 200℃.

5. The particle removal method according to claim 1, characterized in that, The temperature of the high-pressure hot gas is 100℃~200℃, and the temperature of the high-pressure cold gas is -200℃~10℃.

6. The particle removal method according to claim 1, characterized in that, The pressure of the high-pressure hot gas or the high-pressure cold gas is 1 atm to 10 atm.

7. The particle removal method according to claim 1, characterized in that, The high-pressure hot gas or the high-pressure cold gas is N2, CO2 or an inert gas.

8. The particle removal method according to claim 1, characterized in that, The angle between the blowing direction of the high-pressure hot gas or the high-pressure cold gas and the surface of the substrate is no greater than 45°.

9. A particle removal device, characterized in that, include: Main body of the cleanroom; A chuck, located inside the main body of the cleaning chamber, is used to hold a substrate containing surface particles to be removed. The chuck is equipped with a cooling coil or a heater. A nozzle is disposed on the main body of the cleaning chamber and is located above the chuck. The nozzle is used to blow ionized high-pressure hot gas or high-pressure cold gas onto the substrate.

10. The particle removal device according to claim 9, characterized in that, The particle removal device further includes a suction assembly, which is connected to the main body of the cleaning chamber.

11. The particle removal device according to claim 9, characterized in that, The chuck is configured to be movable relative to the nozzle; And / or, The nozzle is configured to move relative to the chuck.

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