Semiconductor device

Abstract

This semiconductor device comprises: a first semiconductor unit; a second semiconductor unit; and a sealing resin that covers a portion of the first semiconductor unit and the second semiconductor unit, the sealing resin having a resin main surface facing a first-direction first side and a resin reverse surface facing a first-direction second side. Each of the first semiconductor unit and the second semiconductor unit has a main surface exposed from the sealing resin to the first-direction first side and a reverse surface exposed from the sealing resin to the first-direction second side.

Description

Semiconductor Devices

[0001] The present disclosure relates to semiconductor devices.

[0002] Patent Document 1 discloses an example of a conventional semiconductor device. The semiconductor device disclosed in this document includes a first semiconductor element, a second semiconductor element, and a sealing resin. One side of each of the first semiconductor element and the second semiconductor element in the thickness direction is covered with the sealing resin.

[0003] Japanese Patent Application Laid-Open No. 2023-072579

[0004] [Summary] If heat dissipation from the first semiconductor element and the second semiconductor element is hindered by the sealing resin, the semiconductor device may not operate properly.

[0005] An object of the present disclosure is to provide an improved semiconductor device compared to conventional semiconductor devices. In particular, in view of the above-mentioned circumstances, an object of the present disclosure is to provide a semiconductor device that can promote heat dissipation.

[0006] A semiconductor device provided by a first aspect of the present disclosure includes a first semiconductor unit including a first semiconductor element, a second semiconductor unit including a second semiconductor element, and a sealing resin covering a portion of each of the first semiconductor unit and the second semiconductor unit, the sealing resin having a resin main surface facing a first side in a first direction and a resin back surface facing a second side in the first direction. The first semiconductor unit has a first main surface exposed from the sealing resin to the first side in the first direction and a first back surface exposed from the sealing resin to the second side in the first direction. The second semiconductor unit has a second main surface exposed from the sealing resin to the first side in the first direction and a second back surface exposed from the sealing resin to the second side in the first direction.

[0007] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings.

[0008] FIG. 1 is a plan view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 2 is a bottom view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 3 is a cross-sectional view taken along line III-III in FIG. 1. FIG. 4 is a cross-sectional view taken along line IV-IV in FIG. 1. FIG. 5 is a cross-sectional view taken along line V-V in FIG. 1. FIG. 6 is a plan view showing a first modified example of the semiconductor device according to the first embodiment of the present disclosure. FIG. 7 is a plan view showing a second modified example of the semiconductor device according to the first embodiment of the present disclosure. FIG. 8 is a plan view showing a third modified example of the semiconductor device according to the first embodiment of the present disclosure. FIG. 9 is a plan view showing a fourth modified example of the semiconductor device according to the first embodiment of the present disclosure. FIG. 10 is a plan view showing a fifth modified example of the semiconductor device according to the first embodiment of the present disclosure. FIG. 11 is a plan view showing a sixth modified example of the semiconductor device according to the first embodiment of the present disclosure. FIG. 12 is a bottom view showing a seventh modified example of the semiconductor device according to the first embodiment of the present disclosure. FIG. 13 is a bottom view showing an eighth modified example of the semiconductor device according to the first embodiment of the present disclosure. FIG. 14 is a bottom view showing a ninth modified example of the semiconductor device according to the first embodiment of the present disclosure. FIG. 15 is a plan view showing a tenth modified example of the semiconductor device according to the first embodiment of the present disclosure. FIG. 16 is a plan view showing an eleventh modified example of the semiconductor device according to the first embodiment of the present disclosure. FIG. 17 is a plan view showing a semiconductor device according to a second embodiment of the present disclosure. FIG. 18 is a bottom view showing a semiconductor device according to the second embodiment of the present disclosure. FIG. 19 is a cross-sectional view taken along line XIX-XIX in FIG. 17. FIG. 20 is a cross-sectional view taken along line XX-XX in FIG. 17. FIG. 21 is a cross-sectional view taken along line XXI-XXI in FIG. 17. FIG. 22 is a plan view showing a semiconductor device according to a third embodiment of the present disclosure. FIG. 23 is a bottom view showing a semiconductor device according to the third embodiment of the present disclosure. FIG. 24 is a cross-sectional view taken along line XXIV-XXIV in FIG. 22. FIG. 25 is a cross-sectional view taken along line XXV-XXV in FIG. 22. FIG. 26 is a cross-sectional view taken along line XXVI-XXVI in FIG. 22. Fig. 27 is a plan view showing a semiconductor device according to a fourth embodiment of the present disclosure. Fig. 28 is a bottom view showing a semiconductor device according to the fourth embodiment of the present disclosure. Fig. 29 is a cross-sectional view taken along line XXIX-XXIX in Fig. 27. Fig. 30 is a cross-sectional view taken along line XXX-XXX in Fig. 27.FIG. 31 is a cross-sectional view taken along line XXXI-XXXI in FIG. 27 . FIG. 32 is a plan view showing a semiconductor device according to a fifth embodiment of the present disclosure. FIG. 33 is a bottom view showing a semiconductor device according to a fifth embodiment of the present disclosure. FIG. 34 is a cross-sectional view taken along line XXXIV-XXXIV in FIG. 32 . FIG. 35 is a cross-sectional view taken along line XXXV-XXXV in FIG. 32 . FIG. 36 is a cross-sectional view taken along line XXXVI-XXXVI in FIG. 32 . FIG. 37 is a plan view showing a first modified example of the semiconductor device according to the fifth embodiment of the present disclosure. FIG. 38 is a bottom view showing a first modified example of the semiconductor device according to the fifth embodiment of the present disclosure. FIG. 39 is a plan view showing a second modified example of the semiconductor device according to the fifth embodiment of the present disclosure. FIG. 40 is a bottom view showing a second modified example of the semiconductor device according to the fifth embodiment of the present disclosure. FIG. 41 is a plan view showing a third modified example of the semiconductor device according to the fifth embodiment of the present disclosure. FIG. 42 is a bottom view showing a third modified example of the semiconductor device according to the fifth embodiment of the present disclosure. FIG. 43 is a plan view showing a fourth modified example of the semiconductor device according to the fifth embodiment of the present disclosure. FIG. 44 is a bottom view showing a fourth modified example of the semiconductor device according to the fifth embodiment of the present disclosure. FIG. 45 is a plan view showing a semiconductor device according to the sixth embodiment of the present disclosure. FIG. 46 is a bottom view showing a semiconductor device according to the sixth embodiment of the present disclosure. FIG. 47 is a cross-sectional view taken along line XLVII-XLVII in FIG. 45. FIG. 48 is a cross-sectional view taken along line XLVIII-XLVIII in FIG. 45. FIG. 49 is a cross-sectional view taken along line XLIX-XLIX in FIG. 45. FIG. 50 is a plan view showing a semiconductor device according to the seventh embodiment of the present disclosure. FIG. 51 is a bottom view showing a semiconductor device according to the seventh embodiment of the present disclosure. FIG. 52 is a cross-sectional view taken along line LII-LII in FIG. 50. FIG. 53 is a cross-sectional view taken along line LIII-LIII in FIG. 50. FIG. 54 is a cross-sectional view taken along line LIV-LIV in FIG. 50. Fig. 55 is a plan view showing a first modified example of the semiconductor device according to the seventh embodiment of the present disclosure. Fig. 56 is a cross-sectional view taken along line LVI-LVI in Fig. 55. Fig. 57 is a plan view showing the semiconductor device according to the eighth embodiment of the present disclosure. Fig. 58 is a bottom view showing the semiconductor device according to the eighth embodiment of the present disclosure. Fig. 59 is a cross-sectional view taken along line LIX-LIX in Fig. 57. Fig. 60 is a cross-sectional view taken along line LX-LX in Fig. 57.FIG. 61 is a cross-sectional view taken along line LXI-LXI in FIG.

[0009] DETAILED DESCRIPTION Preferred embodiments of the present disclosure will now be described in detail with reference to the drawings.

[0010] The terms "first," "second," "third," etc. in this disclosure are used for identification purposes only and are not intended to impose any ranking on their objects.

[0011] In this disclosure, unless otherwise specified, "a certain object A is formed on a certain object B" and "a certain object A is formed on a certain object B" include "a certain object A is formed directly on a certain object B" and "a certain object A is formed on a certain object B with another object interposed between the certain object A and the certain object B." Similarly, "a certain object A is disposed on a certain object B" and "a certain object A is disposed on a certain object B" include "a certain object A is disposed directly on a certain object B" and "a certain object A is disposed on a certain object B with another object interposed between the certain object A and the certain object B" unless otherwise specified. Similarly, "a certain object A is located on a certain object B" includes "a certain object A is located on a certain object B with a certain object A in contact with the certain object B" and "a certain object A is located on a certain object B with another object interposed between the certain object A and the certain object B." Unless otherwise specified, the phrase "an object A overlaps an object B when viewed in a certain direction" includes "an object A overlaps the entire object B" and "an object A overlaps a part of an object B." In the present disclosure, "a surface A faces in (one side or the other side of) direction B" is not limited to the case where the angle of surface A with respect to direction B is 90°, but also includes the case where surface A is tilted with respect to direction B.

[0012] 1 to 5 show a semiconductor device according to a first embodiment of the present disclosure. The semiconductor device A1 of this embodiment includes a first semiconductor unit 1, a second semiconductor unit 2, and a sealing resin 3. The semiconductor device A1 may include a first electrode conductive portion 4 and a fourth electrode conductive portion 5.

[0013] In these figures, the thickness direction of the present disclosure is defined as the first direction z. The first side of the first direction z is referred to as the z1 side, and the second side opposite the first side in the z direction is referred to as the z2 side. A direction perpendicular to the first direction z is defined as the second direction x. The first side of the second direction x is referred to as the x1 side, and the second side opposite the x1 side is referred to as the x2 side. The direction perpendicular to the first direction z and the second direction x is defined as the third direction y. The first side of the third direction y is referred to as the y1 side, and the second side opposite the y1 side is referred to as the y2 side.

[0014] The sealing resin 3 covers a portion of each of the first semiconductor unit 1 and the second semiconductor unit 2. The specific configuration of the sealing resin 3 is not limited in any way, and it may include, for example, a resin such as an epoxy resin. In this embodiment, the sealing resin 3 may be an LDS (Laser Direct Structuring) resin that contains an epoxy resin or the like as a main component and also contains a metal complex.

[0015] The sealing resin 3 has a resin main surface 3A and a resin back surface 3B. The resin main surface 3A faces a first side z1 in the first direction z and may be a flat surface. The resin back surface 3B faces a second side z2 in the first direction z and may be a flat surface.

[0016] The first semiconductor unit 1 includes a first semiconductor element 10. The first semiconductor unit 1 has a first main surface 1A and a first back surface 1B. The first main surface 1A is exposed from the sealing resin 3 to a first side z1 in the first direction z. The first back surface 1B is exposed from the sealing resin 3 to a second side z2 in the first direction z. The first main surface 1A and the first back surface 1B can have various specific shapes, such as a flat surface, a curved surface, or a curved surface. In the illustrated example, the first main surface 1A can be a flat surface and can be flush with the resin main surface 3A. The first back surface 1B can be a flat surface and can be flush with the resin back surface 3B. The first main surface 1A and the resin main surface 3A can have cutting marks that are continuous with each other.

[0017] The first semiconductor element 10 is a main component that exerts the electrical function of the first semiconductor unit 1. There is no limitation on the specific configuration of the first semiconductor element 10. The first semiconductor element 10 may be a switching element such as a metal-oxide-semiconductor field-effect transistor (MOSFET), a bipolar transistor including an insulated gate bipolar transistor (IGBT), a thyristor, or a high electron mobility transistor (HEMT), a diode, or the like.

[0018] In this embodiment, the first semiconductor element 10 may have a first element body 100, a first electrode 101, a second electrode 102, and a third electrode 103. The first element body 100 includes a semiconductor such as Si (silicon), SiC (silicon carbide), or GaN (gallium nitride). In the illustrated example, the first electrode 101 and the second electrode 102 are located on a first side z1 in the first direction z, and the third electrode 103 is located on a second side z2 in the first direction z. For example, the first element body 100 may include SiC, the first electrode 101 may be a gate electrode, the second electrode 102 may be a source electrode, and the third electrode 103 may be a drain electrode, and the first semiconductor element 10 may be configured as a MOSFET.

[0019] The first semiconductor unit 1 may include a first main surface metal layer 11 and a first back surface metal layer 12. The first main surface metal layer 11 is conductively joined to the first semiconductor element 10 and constitutes at least a portion of the first main surface 1A. In the illustrated example, the entire first main surface 1A may be constituted by the first main surface metal layer 11. The first main surface metal layer 11 may include, for example, a metal such as Cu (copper), Ni (nickel), or Fe (iron), or an alloy thereof.

[0020] The size and shape of the first main surface metal layer 11 are not limited in any way. In the illustrated example, the first main surface metal layer 11 may be rectangular. The first main surface metal layer 11 may be larger than the second electrode 102 and may also be larger than the first semiconductor element 10.

[0021] In this embodiment, the first principal surface metal layer 11 is conductively joined to the second electrode 102. The specific method for conductively joining the first principal surface metal layer 11 and the second electrode 102 is not limited in any way, and a method using a bonding layer (not shown) such as solder or silver paste, a direct bonding method such as solid-state diffusion bonding, or the like may be used as appropriate.

[0022] The first back surface metal layer 12 is conductively bonded to the first semiconductor element 10 and constitutes at least a part of the first back surface 1B. In the illustrated example, the entire first back surface 1B can be constituted by the first back surface metal layer 12. The first back surface metal layer 12 may include, for example, a metal such as Cu (copper), Ni (nickel), or Fe (iron), or an alloy thereof.

[0023] There is no limitation on the size and shape of the first back surface metal layer 12. In the illustrated example, the first back surface metal layer 12 may be rectangular. The first back surface metal layer 12 may be larger than the third electrode 103 and may also be larger than the first semiconductor element 10.

[0024] In this embodiment, the first back surface metal layer 12 is conductively joined to the third electrode 103. The specific method for conductively joining the first back surface metal layer 12 and the third electrode 103 is not limited in any way, and a method using a bonding layer (not shown) such as solder or silver paste, a direct bonding method such as solid-state diffusion bonding, or the like may be used as appropriate.

[0025] The second semiconductor unit 2 includes a second semiconductor element 20. The second semiconductor unit 2 has a second main surface 2A and a second back surface 2B. The second main surface 2A is exposed from the sealing resin 3 to a first side z1 in the first direction z. The second back surface 2B is exposed from the sealing resin 3 to a second side z2 in the first direction z. The second main surface 2A and the second back surface 2B may have various specific shapes, such as a flat surface, a curved surface, or a curved surface. In the illustrated example, the second main surface 2A may be a flat surface and may be flush with the resin main surface 3A. The second back surface 2B may be a flat surface and may be flush with the resin back surface 3B. The second main surface 2A and the resin main surface 3A may have cutting marks that are continuous with each other.

[0026] In this embodiment, the second semiconductor unit 2 may be located on the second side x2 in the second direction x relative to the first semiconductor unit 1.

[0027] The second semiconductor element 20 is a main component that exhibits the electrical function of the second semiconductor unit 2. There is no limitation on the specific configuration of the second semiconductor element 20. The second semiconductor element 20 may be a switching element such as a metal-oxide-semiconductor field-effect transistor (MOSFET), a bipolar transistor including an insulated gate bipolar transistor (IGBT), a thyristor, or a high electron mobility transistor (HEMT), a diode, or the like.

[0028] In this embodiment, the second semiconductor element 20 may have a second element body 200, a fourth electrode 201, a fifth electrode 202, and a sixth electrode 203. The second element body 200 includes a semiconductor such as Si (silicon), SiC (silicon carbide), or GaN (gallium nitride). In the illustrated example, the fourth electrode 201 and the fifth electrode 202 are located on a first side z1 in the first direction z, and the sixth electrode 203 is located on a second side z2 in the first direction z. For example, the second element body 200 may include Si (silicon), the fourth electrode 201 may be a gate electrode, the fifth electrode 202 may be an emitter electrode, and the sixth electrode 203 may be a collector electrode, and the second semiconductor element 20 may be configured as an IGBT.

[0029] In the illustrated example, the second semiconductor element 20 may be larger than the first semiconductor element 10 when viewed in the first direction z. The thickness of the second semiconductor element 20 in the first direction z may be greater than the thickness of the first semiconductor element 10 in the first direction z.

[0030] In the illustrated example, the sixth electrode 203 forms at least a part of the second rear surface 2 B. The entire second rear surface 2 B may be formed by the sixth electrode 203.

[0031] The second semiconductor unit 2 may include a second main surface metal layer 21. The second main surface metal layer 21 is conductively joined to the second semiconductor element 20 and constitutes at least a portion of the second main surface 2A. In the illustrated example, the entire second main surface 2A may be constituted by the second main surface metal layer 21. The second main surface metal layer 21 may include, for example, a metal such as Cu (copper), Ni (nickel), or Fe (iron), or an alloy thereof.

[0032] The size and shape of the second main surface metal layer 21 are not limited in any way. In the illustrated example, the second main surface metal layer 21 may be rectangular. The second main surface metal layer 21 may be larger than the fifth electrode 202 and may also be larger than the second semiconductor element 20. The thickness of the second main surface metal layer 21 may be thicker than the thicknesses of the first main surface metal layer 11 and the first back surface metal layer 12, for example.

[0033] In this embodiment, the second principal surface metal layer 21 is conductively joined to the fifth electrode 202. The specific method for conductively joining the second principal surface metal layer 21 and the fifth electrode 202 is not limited in any way, and a method using a bonding layer (not shown) such as solder or silver paste, a direct bonding method such as solid-state diffusion bonding, or the like may be used as appropriate.

[0034] The first electrode conductive portion 4 forms a conductive path between the first semiconductor element 10 and the outside, and in this embodiment, is electrically connected to the first electrode 101. The first electrode conductive portion 4 may contain a metal such as Cu (copper), Au (gold), or Ni (nickel), or an alloy thereof. The first electrode conductive portion 4 may have a main surface portion 41 and a through portion 42.

[0035] The main surface portion 41 is exposed to a first side z1 in the first direction z from the sealing resin 3. The specific configuration of the main surface portion 41 is not limited in any way, and may include, for example, a mounting portion 411 and a relay portion 412.

[0036] A conductive member such as a wire (not shown) may be connected to the mounting portion 411, for example, when the semiconductor device A1 is mounted on a circuit board Sb. In the illustrated example, the mounting portion 411 is located on the second side y2 in the third direction y with respect to the first semiconductor element 10 and the first main surface metal layer 11 as viewed in the first direction z. The mounting portion 411 has a shape that extends in the second direction x, for example. The relay portion 412 is connected to the mounting portion 411, and a portion of the relay portion 412 overlaps the first electrode 101 as viewed in the first direction z.

[0037] The through portion 42 is electrically interposed between the first electrode 101 and the main surface portion 41, and penetrates at least a part of the sealing resin 3 in the first direction z. The through portion 42 is connected to the first electrode 101 and the relay portion 412.

[0038] There is no limitation on the method for forming the first electrode conduction part 4. When the sealing resin 3 contains an LDS resin, a metal underlayer may be formed by precipitating a metal complex by laser irradiation, and a metal layer may be laminated on this metal underlayer by plating.

[0039] The first main surface metal layer 11 may have a recess 111. The recess 111 is recessed to the first side y1 in the third direction y when viewed in the first direction z, and accommodates the through portion 42.

[0040] The fourth electrode conductive portion 5 forms a conductive path between the second semiconductor element 20 and the outside, and in this embodiment, is conductive to the fourth electrode 201. The fourth electrode conductive portion 5 may contain a metal such as Cu (copper), Au (gold), or Ni (nickel), or an alloy thereof. The fourth electrode conductive portion 5 may have a main surface portion 51 and a through portion 52.

[0041] The main surface portion 51 is exposed to a first side z1 in the first direction z from the sealing resin 3. The specific configuration of the main surface portion 51 is not limited in any way, and may include, for example, a mounting portion 511 and a relay portion 512.

[0042] A conductive member such as a wire (not shown) may be connected to the mounting portion 511, for example, when the semiconductor device A1 is mounted on a circuit board Sb. In the illustrated example, the mounting portion 511 is located on the second side y2 in the third direction y with respect to the second semiconductor element 20 and the second main surface metal layer 21 as viewed in the first direction z. The mounting portion 511 has a shape that extends in the second direction x, for example. The relay portion 512 is connected to the mounting portion 511, and a portion of the relay portion 512 overlaps the fourth electrode 201 as viewed in the first direction z.

[0043] The through portion 52 is electrically interposed between the fourth electrode 201 and the main surface portion 51, and penetrates at least a part of the sealing resin 3 in the first direction z. The through portion 52 is connected to the fourth electrode 201 and the relay portion 512.

[0044] There is no limitation on the method for forming the fourth electrode conduction part 5. When the sealing resin 3 contains an LDS resin, a metal underlayer may be formed by precipitating a metal complex by laser irradiation, and a metal layer may be laminated on this metal underlayer by plating.

[0045] The second main surface metal layer 21 may have a recess 211. The recess 211 is recessed to the first side y1 in the third direction y when viewed in the first direction z, and accommodates the through portion 52.

[0046] In the illustrated example, the centers of the first semiconductor element 10 and the second semiconductor element 20 are at approximately the same position in the third direction y. The centers of the mounting portion 411 and the mounting portion 511 are at approximately the same position in the third direction y. The length of the relay portion 412 in the third direction y is longer than the length of the relay portion 512 in the third direction y.

[0047] 3 to 5 , when the semiconductor device A1 is mounted on, for example, a circuit board Sb, the first back surface 1B and the second back surface 2B are conductively joined to a wiring portion (not shown) of the circuit board Sb, for example, by solder (not shown). Conductive members such as wires and metal plate members may be connected to the first main surface 1A and the second main surface 2A. Conductive members such as wires and metal plate members may be connected to the mounting portion 411 and the mounting portion 511.

[0048] Next, the operation of the semiconductor device A1 will be described.

[0049] The first semiconductor unit 1 and the second semiconductor unit 2 are exposed from the sealing resin 3 on both sides in the first direction z. This allows the heat generated from the first semiconductor element 10 and the second semiconductor element 20 to be dissipated more efficiently on both sides in the first direction z. Therefore, according to this embodiment, heat dissipation from the semiconductor device A1 can be promoted.

[0050] The first semiconductor unit 1 and the second semiconductor unit 2 are exposed from the sealing resin 3 on both sides in the first direction z, which makes it possible to further shorten the conduction paths between the first semiconductor element 10 and the second semiconductor element 20 and the outside, thereby achieving low resistance and low inductance in the semiconductor device A1.

[0051] Since the first semiconductor unit 1 includes a first main surface metal layer 11 and a first back surface metal layer 12, and the second semiconductor unit 2 includes a second main surface metal layer 21, when the thicknesses of the first semiconductor element 10 and the second semiconductor element 20 are different from each other, it is possible to appropriately configure a semiconductor device A1 in which the first main surface 1A, first back surface 1B, second main surface 2A, and second back surface 2B are exposed from the sealing resin 3 by adopting or not adopting the first main surface metal layer 11, the first back surface metal layer 12, and the second main surface metal layer 21, or by adjusting the thicknesses of the first main surface metal layer 11, the first back surface metal layer 12, and the second main surface metal layer 21 relative to each other.

[0052] By using an LDS (Laser Direct Structuring) resin, which contains an epoxy resin or the like as a main component and also a metal complex, as the sealing resin 3, any desired portion of the sealing resin 3 can be easily removed by laser irradiation or the like, thereby increasing the degree of freedom in the shape of the sealing resin 3. In forming the first electrode conductor 4 and the fourth electrode conductor 5, a base layer containing metal can be formed by precipitation of a metal complex by irradiating the sealing resin 3 with a laser at the portion where the first electrode conductor 4 and the fourth electrode conductor 5 are to be formed. Using this base layer allows the appropriate and easy formation of a plating layer of Cu (copper) or the like that constitutes the first electrode conductor 4 and the fourth electrode conductor 5.

[0053] 6 to 61 show modified examples and other embodiments of the present disclosure. In these figures, elements that are the same as or similar to those in the above-described embodiment are given the same reference numerals. The configurations of the various parts in each modified example and each embodiment can be combined with each other as appropriate within the scope of not causing technical contradictions.

[0054] 6 shows a first modified example of the semiconductor device A1. In the semiconductor device A11 of this modified example, the center of the first semiconductor element 10 is located on the second side y2 in the third direction y relative to the center of the second semiconductor element 20. The edge of the first semiconductor element 10 closest to the second side y2 in the third direction y is located at approximately the same position in the third direction y as the edge of the second semiconductor element 20 closest to the second side y2 in the third direction y. The centers of the mounting portion 411 and the mounting portion 511 are located at approximately the same position in the third direction y.

[0055] 7 shows a second modified example of the semiconductor device A1. In the semiconductor device A12 of this modified example, the center of the mounting portion 411 is located on the first side y1 in the third direction y from the center of the mounting portion 511. The centers of the first semiconductor element 10 and the second semiconductor element 20 are located at approximately the same position in the third direction y.

[0056] 8 shows a third modified example of the semiconductor device A1. In the semiconductor device A13 of this modified example, the first electrode 101 and the fourth electrode 201 are positioned opposite each other in the second direction x. The mounting portions 411 and 511 are positioned on the second side y2 in the third direction y relative to the first semiconductor element 10 and the second semiconductor element 20. The relay portions 412 and 512 have a curved shape when viewed in the first direction z.

[0057] 9 shows a fourth modified example of the semiconductor device A1. In the semiconductor device A14 of this modified example, the first electrode 101 and the fourth electrode 201 are positioned opposite each other in the second direction x. The mounting portion 411 and the mounting portion 511 are positioned between the first semiconductor element 10 and the second semiconductor element 20 in the second direction x, and each has a shape that extends in the third direction y. The mounting portion 411 and the mounting portion 511 are adjacent to each other in the second direction x.

[0058] 10 shows a fifth modified example of the semiconductor device A1. In the semiconductor device A15 of this modified example, the first electrode 101 and the fourth electrode 201 are located on opposite sides of each other in the second direction x. The mounting portion 411 and the mounting portion 511 are located on opposite sides of each other in the second direction x, with the first semiconductor element 10 and the second semiconductor element 20 sandwiched therebetween.

[0059] 11 shows a sixth modified example of the semiconductor device A1. In the semiconductor device A16 of this modified example, the first electrode 101 and the fourth electrode 201 are located on opposite sides of each other in the second direction x. The mounting portions 411 and 511 are located on the second side y2 in the third direction y relative to the first semiconductor element 10 and the second semiconductor element 20. The relay portions 412 and 512 have a bent shape when viewed in the first direction z.

[0060] As can be understood by referring to semiconductor devices A11 to A16, the relative positional relationship between the first semiconductor element 10 and the second semiconductor element 20, and the specific configurations of the first electrode conductive portion 4 and the fourth electrode conductive portion 5 are not limited in any way.

[0061] 12 shows a seventh modification of the semiconductor device A1. In the semiconductor device A17 of this modification, the size in the third direction y of the first back surface metal layer 12 is significantly larger than the size in the third direction y of the first semiconductor element 10. The size in the third direction y of the first back surface metal layer 12 is approximately the same as the size in the third direction y of the second semiconductor element 20.

[0062] 13 shows an eighth modification of the semiconductor device A1. In the semiconductor device A18 of this modification, the size in the second direction x of the first back surface metal layer 12 is significantly larger than the size in the second direction x of the first semiconductor element 10. The size in the second direction x of the first back surface metal layer 12 is larger than the size in the second direction x of the second semiconductor element 20.

[0063] 14 shows a ninth modification of the semiconductor device A1. In the semiconductor device A19 of this modification, the size of the first back surface metal layer 12 in the second direction x and the third direction y is significantly larger than the size of the first semiconductor element 10 in the second direction x and the third direction y. The size of the first back surface metal layer 12 in the second direction x and the third direction y is approximately the same as the size of the second semiconductor element 20 in the second direction x and the third direction y.

[0064] As can be understood by referring to the semiconductor devices A17 to A19, the relative sizes of the first back surface metal layer 12 and the first and second semiconductor elements 10 and 20 are not limited in any way.

[0065] 15 shows a tenth modified example of the semiconductor device A1. A semiconductor device A110 of this modified example includes two first semiconductor units 1. The configuration of each first semiconductor unit 1 may be, for example, similar to the configuration of the first semiconductor unit 1 in the semiconductor device A1. The two first semiconductor units 1 may be aligned, for example, in the second direction x. In this embodiment, the first electrode conduction portion 4 is electrically connected to the first electrodes 101 of the first semiconductor elements 10 of the two first semiconductor units 1. The first electrode conduction portion 4 includes one main surface portion 41 and two through portions 42.

[0066] The main surface portion 41 includes one mounting portion 411 and one relay portion 412. The mounting portion 411 is located on the second side y2 in the third direction y with respect to the two first semiconductor units 1. The relay portion 412 is connected to the mounting portion 411 and has a branched shape toward the two through portions 42.

[0067] 16 shows an eleventh modified example of the semiconductor device A1. The semiconductor device A111 of this modified example includes three first semiconductor units 1. The configuration of each first semiconductor unit 1 may be, for example, similar to the configuration of the first semiconductor unit 1 in the semiconductor device A1. The three first semiconductor units 1 may be aligned, for example, in the second direction x. In this embodiment, the first electrode conduction portion 4 is electrically connected to the first electrodes 101 of the first semiconductor elements 10 of the three first semiconductor units 1. The first electrode conduction portion 4 includes one main surface portion 41 and three through portions 42.

[0068] The main surface portion 41 includes one mounting portion 411 and one relay portion 412. The mounting portion 411 is located on the second side y2 in the third direction y with respect to the three first semiconductor units 1. The relay portion 412 is connected to the mounting portion 411 and has a branched shape toward the three through portions 42.

[0069] As can be understood with reference to the semiconductor devices A110 and A111, the number of first semiconductor units 1 in the present disclosure is not limited in any way and may be one or more. Similarly, the number of second semiconductor units 2 in the present disclosure is not limited in any way and may be one or more.

[0070] 17 to 21 show a semiconductor device according to a second embodiment of the present disclosure. In the semiconductor device A2 of this embodiment, the first semiconductor unit 1 includes a first semiconductor element 10 and a first back surface metal layer 12, but does not include the first main surface metal layer 11 of the semiconductor device A1.

[0071] In the first semiconductor unit 1, the second electrode 102 constitutes at least a part of the first main surface 1A. The first main surface 1A may be constituted by the first electrode 101, the second electrode 102, and the first element body 100. The thickness of the second main surface metal layer 21 may be thinner than the thickness of the second main surface metal layer 21 in the semiconductor device A1.

[0072] In the semiconductor device A2, the first electrode 101 is exposed to the first side z1 in the first direction z from the sealing resin 3. Therefore, the semiconductor device A2 does not need to include the first electrode conduction portion 4 in the semiconductor device A1.

[0073] According to this embodiment, heat dissipation from the semiconductor device A2 can be promoted. Because the first semiconductor unit 1 does not include the first main surface metal layer 11, heat dissipation from the first semiconductor element 10 to the first side z1 in the first direction z can be further promoted. Because the thickness of the second main surface metal layer 21 can be reduced, heat dissipation from the second semiconductor element 20 can be further promoted.

[0074] 22 to 26 show a semiconductor device according to a third embodiment of the present disclosure. In a semiconductor device A3 of this embodiment, the second semiconductor unit 2 includes a second semiconductor element 20, but does not include the second main surface metal layer 21 of the above-described embodiment. The configuration of the first semiconductor unit 1 may be similar to the configuration of the first semiconductor unit 1 in the semiconductor device A2, for example.

[0075] In this embodiment, the fifth electrode 202 forms at least a part of the second main surface 2 A. The second main surface 2 A may be formed by the fourth electrode 201, the fifth electrode 202, and the second element body 200.

[0076] The second back surface 2B may be flush with the resin back surface 3B. The second main surface 2A may be located on the second side z2 in the first direction z from the resin main surface 3A. The sealing resin 3 may have a main surface opening 31A. The main surface opening 31A may be formed by removing a portion of the sealing resin 3 by laser irradiation or the like. The second main surface 2A may be exposed to the outside from the main surface opening 31A.

[0077] According to this embodiment, heat dissipation from the semiconductor device A3 can be promoted. The configuration in which the second semiconductor element 20 is directly exposed on both the first side z1 and the second side z2 in the first direction z is suitable for promoting heat dissipation from the second semiconductor element 20.

[0078] 27 to 31 show a semiconductor device according to a fourth embodiment of the present disclosure. In a semiconductor device A4 of this embodiment, the first semiconductor unit 1 includes a first semiconductor element 10, but does not include the first main surface metal layer 11 or the first back surface metal layer 12. The second semiconductor unit 2 includes a second semiconductor element 20, but does not include the second main surface metal layer 21.

[0079] The second electrode 102 constitutes at least a part of the first main surface 1A. The first main surface 1A may be constituted by the first electrode 101, the second electrode 102, and the third electrode 103. The third electrode 103 constitutes at least a part of the first back surface 1B. The first back surface 1B may be constituted entirely by the third electrode 103. The first main surface 1A may be substantially flush with the resin main surface 3A. The first back surface 1B may be substantially flush with the resin main surface 3A.

[0080] The fifth electrode 202 constitutes at least a part of the second main surface 2A. The second main surface 2A may be constituted by the fourth electrode 201, the fifth electrode 202, and the sixth electrode 203. The sixth electrode 203 constitutes at least a part of the second back surface 2B. The second back surface 2B may be constituted entirely by the sixth electrode 203. The second main surface 2A may be substantially flush with the resin main surface 3A. The second back surface 2B may be substantially flush with the resin main surface 3A.

[0081] According to this embodiment, heat dissipation from the semiconductor device A4 can be promoted. The first semiconductor element 10 and the second semiconductor element 20 are configured to be directly exposed on both the first side z1 and the second side z2 in the first direction z, which is suitable for promoting heat dissipation from the first semiconductor element 10 and the second semiconductor element 20.

[0082] 32 to 36 show a semiconductor device according to a fifth embodiment of the present disclosure. In a semiconductor device A5 of this embodiment, a first semiconductor unit 1 includes a first semiconductor element 10, a first main surface metal layer 11, and a first back surface metal layer 12. A second semiconductor unit 2 includes a second semiconductor element 20, a second main surface metal layer 21, and a second back surface metal layer 22. The semiconductor device A5 includes a first electrode conduction portion 4 and a fourth electrode conduction portion 5.

[0083] The first semiconductor element 10 has a first element body 100, a first electrode 101, a second electrode 102, and a third electrode 103. The first electrode 101 and the second electrode 102 are located on a second side z2 in the first direction z. The third electrode 103 is located on a first side z1 in the first direction z.

[0084] The first main surface metal layer 11 is conductively joined to the third electrode 103. The first main surface metal layer 11 constitutes the first main surface 1A. The first back surface metal layer 12 is conductively joined to the second electrode 102. The first back surface metal layer 12 has a recess 121. The recess 121 accommodates the through portion 42 when viewed in the first direction z.

[0085] The first electrode conduction portion 4 may include a main surface portion 41, a through portion 42, a back surface portion 43, and a through portion 44. The main surface portion 41 is exposed from the sealing resin 3 to a first side z1 in the first direction z. The back surface portion 43 is exposed from the sealing resin 3 to a second side z2 in the first direction z. The through portion 42 is electrically interposed between the first electrode 101 and the back surface portion 43, and penetrates a portion of the sealing resin 3 in the first direction z. The through portion 42 may be connected to the first electrode 101 and the back surface portion 43. The through portion 44 is electrically interposed between the main surface portion 41 and the back surface portion 43, and penetrates a portion of the sealing resin 3 in the first direction z. The through portion 44 may be connected to the main surface portion 41 and the back surface portion 43.

[0086] The second principal surface metal layer 21 is conductively joined to the sixth electrode 203. The second principal surface metal layer 21 constitutes the second principal surface 2A.

[0087] The second back surface metal layer 22 is electrically connected to the second semiconductor element 20 and constitutes at least a part of the second back surface 2B. In the illustrated example, the entire second back surface 2B may be constituted by the second back surface metal layer 22. The second back surface metal layer 22 may contain, for example, a metal such as Cu (copper), Ni (nickel), or Fe (iron) or an alloy thereof. The size and shape of the second back surface metal layer 22 are not limited in any way.

[0088] The second back surface metal layer 22 is conductively joined to the fifth electrode 202. The second back surface metal layer 22 has a recess 221. The recess 221 accommodates the through portion 52 when viewed in the first direction z.

[0089] The fourth electrode conduction portion 5 may include a main surface portion 51, a through portion 52, a back surface portion 53, and a through portion 54. The main surface portion 51 is exposed from the sealing resin 3 to a first side z1 in the first direction z. The back surface portion 53 is exposed from the sealing resin 3 to a second side z2 in the first direction z. The through portion 52 is electrically interposed between the fourth electrode 201 and the back surface portion 53, and penetrates a portion of the sealing resin 3 in the first direction z. The through portion 52 may be connected to the fourth electrode 201 and the back surface portion 53. The through portion 54 is electrically interposed between the main surface portion 51 and the back surface portion 53, and penetrates a portion of the sealing resin 3 in the first direction z. The through portion 54 may be connected to the main surface portion 51 and the back surface portion 53.

[0090] According to this embodiment, heat dissipation from the semiconductor device A5 can be promoted. In this embodiment, the first semiconductor element 10 of the first semiconductor unit 1 is mounted in a so-called source-down configuration. The second semiconductor element 20 is mounted in a so-called emitter-down configuration. By appropriately using the first main surface metal layer 11, the first back surface metal layer 12, the second main surface metal layer 21, the second back surface metal layer 22, the first electrode conduction portion 4, and the fourth electrode conduction portion 5, a wider variety of mounting configurations can be adopted for the first semiconductor element 10 and the second semiconductor element 20.

[0091] 37 and 38 show a first modified example of the semiconductor device A5. In the semiconductor device A51 of this modified example, the center of the first semiconductor element 10 is located on the second side y2 in the third direction y with respect to the center of the second semiconductor element 20. The main surface portion 41 and the main surface portion 51 are located at approximately the same position in the third direction y.

[0092] 39 and 40 show a second modified example of the semiconductor device A5. In the semiconductor device A52 of this modified example, the centers of the first semiconductor element 10 and the second semiconductor element 20 are at approximately the same position in the third direction y. The main surface portion 41 is located on the first side y1 in the third direction y with respect to the main surface portion 51.

[0093] 41 and 42 show a third modified example of the semiconductor device A5. In the semiconductor device A53 of this modified example, the first electrode 101 and the fourth electrode 201 are positioned opposite each other in the second direction x. The main surface portion 41 and the main surface portion 51 are positioned between the first semiconductor element 10 and the second semiconductor element 20 in the second direction x. The main surface portion 41 and the main surface portion 51 each have a shape that extends in the third direction y.

[0094] 43 and 44 show a fourth modified example of the semiconductor device A5. In the semiconductor device A54 of this modified example, the first electrode 101 and the fourth electrode 201 are located on opposite sides of each other in the second direction x. The main surface portion 41 and the main surface portion 51 are located on opposite sides of each other in the second direction x, sandwiching the first semiconductor element 10 and the second semiconductor element 20 therebetween.

[0095] As can be understood by referring to semiconductor devices A51 to A54, the relative positional relationship between the first semiconductor element 10 and the second semiconductor element 20, and the specific configurations of the first electrode conductive portion 4 and the fourth electrode conductive portion 5 are not limited in any way.

[0096] 45 to 49 show a semiconductor device according to a sixth embodiment of the present disclosure. In a semiconductor device A6 according to this embodiment, similar to the semiconductor device A5, the first semiconductor element 10 of the first semiconductor unit 1 is mounted in a so-called source-down configuration. The second semiconductor element 20 is mounted in a so-called emitter-down configuration. The first semiconductor unit 1 includes the first semiconductor element 10 and a first back surface metal layer 12, but does not include the first main surface metal layer 11 described above. The second semiconductor unit 2 includes the second semiconductor element 20 and a second back surface metal layer 22, but does not include the second main surface metal layer 21 described above.

[0097] The third electrode 103 forms at least a part of the first main surface 1 A. The first main surface 1 A may be entirely formed by the third electrode 103.

[0098] The sixth electrode 203 forms at least a part of the second main surface 2 A. The entire second main surface 2 A may be formed by the sixth electrode 203.

[0099] According to this embodiment, heat dissipation from the semiconductor device A6 can be promoted. In this embodiment, the first semiconductor element 10 of the first semiconductor unit 1 is mounted in a so-called source-down configuration. The second semiconductor element 20 is mounted in a so-called emitter-down configuration. In the first semiconductor unit 1, the third electrode 103 forms the first main surface 1A, and the sixth electrode 203 forms the second main surface 2A, thereby further promoting heat dissipation from the first semiconductor element 10 and the second semiconductor element 20.

[0100] 50 to 54 show a semiconductor device according to a seventh embodiment of the present disclosure. In a semiconductor device A7 of this embodiment, a first semiconductor unit 1 includes a first semiconductor element 10 and a first main surface metal layer 11. The first semiconductor element 10 has a first element body 100, a first electrode 101, a second electrode 102, and a third electrode 103. The first electrode 101, the second electrode 102, and the third electrode 103 are located on a first side z1 in a first direction z. The first electrode 101 may be a gate electrode, the second electrode 102 may be a source electrode, and the third electrode 103 may be a drain electrode. An example of such a first semiconductor element 10 is a GaN-HEMT in which the first element body 100 includes GaN (gallium nitride).

[0101] There are no limitations on the positions, shapes, sizes, etc. of the first electrode 101, the second electrode 102, and the third electrode 103 when viewed in the first direction z. The illustrated first electrode 101, the second electrode 102, and the third electrode 103 are merely one example of their arrangement.

[0102] The first principal surface metal layer 11 constitutes the first principal surface 1 A. The first principal surface metal layer 11 is conductively joined to the second electrode 102 .

[0103] The first element body 100 forms at least a part of the first rear surface 1 B. The first rear surface 1 B may be entirely formed by the first element body 100 .

[0104] The semiconductor device A7 may include a first electrode conduction portion 4 and a third electrode conduction portion 6. The first electrode conduction portion 4 may have the same configuration as the first electrode conduction portion 4 in the semiconductor device A1, for example.

[0105] The third electrode conduction portion 6 forms a conduction path between the third electrode 103 and the outside. The third electrode conduction portion 6 can include a main surface portion 61, a through portion 62, a back surface portion 63, and a through portion 64.

[0106] The main surface portion 61 is exposed from the sealing resin 3 to a first side z1 in the first direction z. The through portion 62 is electrically interposed between the third electrode 103 and the main surface portion 61 and penetrates at least a portion of the sealing resin 3 in the first direction z. The through portion 62 may be connected to the third electrode 103 and the main surface portion 61. The back surface portion 63 is exposed from the sealing resin 3 to a second side z2 in the first direction z. The through portion 64 is electrically interposed between the main surface portion 61 and the back surface portion 63 and penetrates at least a portion of the sealing resin 3 in the first direction z. The through portion 64 may be connected to the main surface portion 61 and the back surface portion 63. The back surface portion 63 may be located on a first side y1 in the third direction y with respect to the first semiconductor element 10. The back surface portion 63 may be used as a drain connection terminal surface when mounting the semiconductor device A7 on a circuit board Sb.

[0107] The second semiconductor unit 2 may have the same configuration as the second semiconductor unit 2 of the semiconductor device A1, for example.

[0108] According to this embodiment, heat dissipation from the semiconductor device A7 can be promoted. The first semiconductor unit 1 includes a first semiconductor element 10 configured as a GaN-HEMT. In the semiconductor device A7, by providing the first main surface metal layer 11, the first electrode conductive portion 4, and the third electrode conductive portion 6, it is possible to appropriately conduct the first semiconductor element 10 configured as a GaN-HEMT to the outside. The first back surface 1B being formed by the first element body 100 is preferable for promoting heat dissipation from the first semiconductor element 10.

[0109] 55 and 56 show a first modified example of the semiconductor device A7. In the semiconductor device A71 of this modified example, the main surface portion 41 is located so as to overlap the first semiconductor element 10 when viewed in the first direction z. As can be understood from this modified example, the specific configuration of the first electrode conduction portion 4 including the main surface portion 41 is not limited in any way.

[0110] 57 to 61 show a semiconductor device according to an eighth embodiment of the present disclosure. In a semiconductor device A8 according to this embodiment, a second semiconductor unit 2 includes a second semiconductor element 20 and a second main surface metal layer 21. The second semiconductor element 20 has a second element body 200, a fourth electrode 201, and a fifth electrode 202. The fourth electrode 201 is located on a first side z1 in the first direction z. The fifth electrode 202 is located on a second side z2 in the first direction z. The second semiconductor element 20 according to this embodiment is configured as a diode, such as a Schottky diode. One of the fourth electrode 201 and the fifth electrode 202 is an anode electrode, and the other is a cathode electrode.

[0111] The second main surface metal layer 21 is conductively joined to the fourth electrode 201 and constitutes at least a part of the second main surface 2A. The second main surface 2A may be entirely constituted by the second main surface metal layer 21. The fifth electrode 202 constitutes at least a part of the second back surface 2B. The second back surface 2B may be entirely constituted by the fifth electrode 202.

[0112] The first semiconductor unit 1 may have the same configuration as the first semiconductor unit 1 in the semiconductor device A1, for example.

[0113] According to this embodiment, it is possible to promote heat dissipation from the semiconductor device A8. As can be understood from this embodiment, the specific type and configuration of the second semiconductor element 20 are not limited in any way.

[0114] The semiconductor device according to the present disclosure is not limited to the above-described embodiment. The specific configuration of each part of the semiconductor device according to the present disclosure can be freely modified in various ways. The present disclosure includes the embodiments described in the following appendices.

[0115] Supplementary Note 1. A semiconductor device comprising: a first semiconductor unit (1) including a first semiconductor element (10); a second semiconductor unit (2) including a second semiconductor element (20); and a sealing resin (3) covering a portion of each of the first semiconductor unit (1) and the second semiconductor unit (2), and having a resin main surface (3A) facing a first side (z1) in a first direction (z) and a resin back surface (3B) facing a second side (z2) in the first direction (z), wherein the first semiconductor unit (1) has a first main surface (1A) exposed from the sealing resin (3) to the first side (z1) in the first direction (z) and a first back surface (1B) exposed from the sealing resin (3) to the second side (z2) in the first direction (z), The semiconductor device (A1) has a second main surface (2A) exposed from the sealing resin (3) to the first side (z1) in the first direction (z) and a second back surface (2B) exposed from the sealing resin (3) to the second side (z2) in the first direction (z). Supplementary Note 2: The semiconductor device (A1) according to Supplementary Note 1, wherein the first semiconductor unit (1) includes a first main surface metal layer (11) that is conductively bonded to the first semiconductor element (10) and that constitutes at least a portion of the first main surface (1A). Supplementary Note 3: The semiconductor device (A1) according to Supplementary Note 1 or 2, wherein the first semiconductor unit (1) further includes a first back surface metal layer (12) that is conductively bonded to the first semiconductor element (10) and that constitutes at least a portion of the first back surface (1B). Supplementary Note 4: The semiconductor device (A1) according to any one of Supplementary Notes 1 to 3, wherein the second semiconductor unit (2) includes a second main surface metal layer (21) that is conductively bonded to the second semiconductor element (20) and that constitutes at least a part of the second main surface (2A).Supplementary Note 5. The semiconductor device (A5) according to Supplementary Note 1 or 4, wherein the second semiconductor unit (2) includes a second back surface metal layer (22) that is conductively bonded to the second semiconductor element (20) and that constitutes at least a part of the second back surface (2B).Supplementary Note 6. The semiconductor device (A1) according to Supplementary Note 2, wherein the first semiconductor element (10) has a first element body (100), a first electrode (101) and a second electrode (102) located on the first side (z1) in the first direction (z), and a third electrode (103) located on the second side (z2) in the first direction (z), and the first main surface metal layer (11) is conductively joined to the second electrode (102). Supplementary Note 7. The semiconductor device (A1) according to Supplementary Note 6, further comprising a first electrode conduction portion (4) including a main surface portion (41) exposed from the sealing resin (3) to the first side (z1) in the first direction (z), and a through portion (42) electrically interposed between the first electrode (101) and the main surface portion (41) and penetrating at least a portion of the sealing resin (3) in the first direction (z). Supplementary Note 7-1. The semiconductor device (A1) according to Appendix 7, wherein the first main surface metal layer (11) has a recess (111) that accommodates the through portion (42) when viewed in the first direction (z). Appendix 8. The semiconductor device (A1) according to Appendix 3, wherein the first semiconductor element (10) has a first element body (100), a first electrode (101) and a second electrode (102) located on the first side (z1) in the first direction (z), and a third electrode (103) located on the second side (z2) in the first direction (z), and the first back surface metal layer (12) is conductively joined to the third electrode (103). Appendix 9. The semiconductor device (A3) according to Appendix 8, wherein the second electrode (102) constitutes at least a part of the first main surface (1A). Appendix 10. The semiconductor device (A4) described in Appendix 1, wherein the first semiconductor element (10) has a first element body (100), a first electrode (101) and a second electrode (102) located on the first side (z1) in the first direction (z), and a third electrode (103) located on the second side (z2) in the first direction (z), the second electrode (102) constituting at least a part of the first main surface (1A), and the third electrode (103) constituting at least a part of the first back surface (1B).Supplementary Note 11. The semiconductor device (A1) according to any one of Supplementary Notes 6 to 10, wherein the first element body (100) includes SiC, the first electrode (101) is a gate electrode, the second electrode (102) is a source electrode, and the third electrode (103) is a drain electrode, and the first semiconductor element (10) is configured as a MOSFET. Supplementary Note 12. The semiconductor device (A1) according to Supplementary Note 4, wherein the second semiconductor element (20) has a second element body (200), a fourth electrode (201) and a fifth electrode (202) located on the first side (z1) in the first direction (z), and a sixth electrode (203) located on the second side (z2) in the first direction (z), and the second main surface metal layer (21) is conductively joined to the fifth electrode (202). Supplementary Note 13. The semiconductor device (A2) according to Appendix 12, wherein the sixth electrode (203) constitutes at least a part of the second back surface (2B). Appendix 14. The semiconductor device (A3) according to Appendix 1, wherein the second semiconductor element (20) has a second element body (200), a fourth electrode (201) and a fifth electrode (202) located on the first side (z1) in the first direction (z), and a sixth electrode (203) located on the second side (z2) in the first direction (z), and the fifth electrode (202) constitutes at least a part of the second main surface (2A). Appendix 15. The semiconductor device (A3) according to Appendix 14, wherein the sixth electrode (203) constitutes at least a part of the second back surface (2B). Appendix 16. The semiconductor device (A1) according to any one of Supplementary Notes 12 to 15, wherein the second element body (200) contains Si, the fourth electrode (201) is a gate electrode, the fifth electrode (202) is an emitter electrode, and the sixth electrode (203) is a collector electrode, and the second semiconductor element (20) is configured as an IGBT.Supplementary Note 17. The semiconductor device (A1) according to Supplementary Note 12 or 13, comprising a fourth electrode conduction portion (5) including: a main surface portion (51) exposed from the sealing resin (3) to the first side (z1) in the first direction (z), and a through portion (52) electrically interposed between the fourth electrode (201) and the main surface portion (51) and penetrating at least a portion of the sealing resin (3) in the first direction (z).Supplementary Note 18. The semiconductor device (A1) according to Supplementary Note 17, wherein the second main surface metal layer (21) has a recess (211) that accommodates the through portion (52) when viewed in the first direction (z). Supplementary Note 19. The semiconductor device (A4) according to Supplementary Note 11, wherein the second semiconductor element (20) has a second element body (200), a fourth electrode (201) and a fifth electrode (202) located on the first side (z1) in the first direction (z), and a sixth electrode (203) located on the second side (z2) in the first direction (z), wherein the fifth electrode (202) constitutes at least a part of the second main surface (2A), and the sixth electrode (203) constitutes at least a part of the second back surface (2B). Supplementary Note 20. The semiconductor device (A5) according to Appendix 3, wherein the first semiconductor element (10) has a first element body (100), a first electrode (101) and a second electrode (102) located on the second side (z2) in the first direction (z), and a third electrode (103) located on the first side (z1) in the first direction (z), and the first back surface metal layer (12) is conductively joined to the second electrode (102). The semiconductor device (A5) according to Supplementary Note 20 includes a first electrode conductive portion (4) including: a main surface portion (41) exposed from the sealing resin (3) to the first side (z1) in the first direction (z); a back surface portion (43) exposed from the sealing resin (3) to the second side (z2) in the first direction (z); a through portion (42) electrically interposed between the first electrode (101) and the back surface portion (43) and penetrating at least a portion of the sealing resin (3) in the first direction (z); and a through portion (44) electrically interposed between the through portion (44) and the back surface portion (43) and penetrating at least a portion of the sealing resin (3) in the first direction (z).Supplementary Note 22. The semiconductor device (A5) according to Supplementary Note 20 or 21, which cites Supplementary Note 3, which cites Supplementary Note 2, wherein the first main surface metal layer (11) is conductively joined to the third electrode (103). Supplementary Note 23. The semiconductor device (A6) according to Supplementary Note 20 or 21, which recites Supplementary Note 3, which recites Supplementary Note 1, wherein the third electrode (103) constitutes at least a part of the first main surface (1A).Supplementary Note 24. The semiconductor device (A5) according to Supplementary Note 20 or 21, wherein the second semiconductor element (20) has a second element body (200), a fourth electrode (201) and a fifth electrode (202) located on the second side (z2) in the first direction (z), and a sixth electrode (203) located on the first side (z1) in the first direction (z), and the first back surface metal layer (12) is conductively joined to the second electrode (102). Supplementary Note 25. The semiconductor device (A5) according to Appendix 22 includes a first electrode conduction portion (4) including: a main surface portion (41) exposed from the sealing resin (3) to the first side (z1) in the first direction (z), a back surface portion (43) exposed from the sealing resin (3) to the second side (z2) in the first direction (z), a through portion (42) electrically interposed between the first electrode (101) and the back surface portion (43) and penetrating at least a portion of the sealing resin (3) in the first direction (z), and a through portion (44) electrically interposed between the through portion (44) and the back surface portion (43) and penetrating at least a portion of the sealing resin (3) in the first direction (z). The semiconductor device (A6) according to Appendix 2, wherein the first semiconductor element (10) has a first element body (100) and a first electrode (101), a second electrode (102), and a third electrode (103) located on the first side (z1) in the first direction (z), and the second semiconductor element (20) has a second element body (200) and a fourth electrode (201), a fifth electrode (202), and a sixth electrode (203) located on the first side (z1) in the first direction (z). Appendix 27. The semiconductor device (A7) according to Appendix 26, wherein the first main surface metal layer (11) is conductively joined to the second electrode (102). Appendix 28. The semiconductor device (A7) described in Appendix 27 includes a first electrode conduction portion (4) including: a main surface portion (41) exposed from the sealing resin (3) to the first side (z1) in the first direction (z); and a through portion (42) electrically interposed between the first electrode (101) and the main surface portion (41) and penetrating at least a portion of the sealing resin (3) in the first direction (z).Supplementary Note 29. The semiconductor device (A7) according to Supplementary Note 28, comprising a third electrode conduction portion (6) including: a main surface portion (61) exposed from the sealing resin (3) to the first side (z1) in the first direction (z); a through portion (62) electrically interposed between the third electrode (103) and the main surface portion (61) and penetrating at least a portion of the sealing resin (3) in the first direction (z); a back surface portion (63) exposed from the sealing resin (3) to the second side (z2) in the first direction (z); and a through portion (64) electrically interposed between the main surface portion (61) and the back surface portion (63) and penetrating at least a portion of the sealing resin (3) in the first direction (z). The semiconductor device (A8) according to Appendix 1, wherein the second semiconductor element (20) has a second element body (200), a fourth electrode (201) located on the first side (z1) in the first direction (z), and a fifth electrode (202) located on the second side (z2) in the first direction (z), and is configured as a diode. Appendix 31. The semiconductor device (A1) according to any one of Appendixes 1 to 30, wherein the sealing resin (3) contains a metal complex.

[0116] A1, A11, A110, A111, A12, A13, A14, A15, A16, A17, A18, A19, A2, A3, A4, A5, A51, A52, A53, A54, A6, A7, A71, A8: semiconductor device 1: first semiconductor unit 1A: first main surface 1B: first back surface 2: second semiconductor unit 2A: second main surface 2B: second back surface 3: sealing resin 3A: resin main surface 3B: resin back surface 4: first electrode conductive portion 5: fourth electrode conductive portion 6: third electrode conductive portion 10: first semiconductor element 11: first main surface metal layer 12: first back surface metal layer 20: second semiconductor element 21: second main surface metal layer 22: second back surface metal layer 31A: main surface opening 41: Main surface portion 42: Through portion 43: Back surface portion 44: Through portion 51: Main surface portion 52: Through portion 53: Back surface portion 54: Through portion 61: Main surface portion 62: Through portion 63: Back surface portion 64: Through portion 100: First element body 101: First electrode 102: Second electrode 103: Third electrode 111: Recess 121: Recess 200: Second element body 201: Fourth electrode 202: Fifth electrode 203: Sixth electrode 211: Recess 221: Recess 411: Mounting portion 412: Relay portion 511: Mounting portion 512: Relay portion x: Second direction y: Third direction z: First direction

Claims

a first semiconductor unit including a first semiconductor element; a second semiconductor unit including a second semiconductor element; a sealing resin that covers a portion of each of the first semiconductor unit and the second semiconductor unit, and has a resin main surface facing a first side in a first direction and a resin back surface facing a second side in the first direction, the first semiconductor unit has a first main surface exposed from the sealing resin to the first side in the first direction and a first back surface exposed from the sealing resin to the second side in the first direction, The second semiconductor unit has a second main surface exposed from the sealing resin to the first side in the first direction and a second back surface exposed from the sealing resin to the second side in the first direction. 　 The semiconductor device according to claim 1 , wherein the first semiconductor unit includes a first main surface metal layer that is conductively joined to the first semiconductor element and that constitutes at least a part of the first main surface. 　 3 . The semiconductor device according to claim 1 , wherein the first semiconductor unit further includes a first back surface metal layer that is conductively joined to the first semiconductor element and that constitutes at least a part of the first back surface.

4. The semiconductor device according to claim 1, wherein the second semiconductor unit includes a second main surface metal layer that is conductively joined to the second semiconductor element and that constitutes at least a part of the second main surface. 　 The semiconductor device according to claim 1 , wherein the second semiconductor unit includes a second back surface metal layer that is conductively joined to the second semiconductor element and that forms at least a part of the second back surface. 　 the first semiconductor element has a first element body, a first electrode and a second electrode located on the first side in the first direction, and a third electrode located on the second side in the first direction; 3. The semiconductor device according to claim 2, wherein said first principal surface metal layer is conductively joined to said second electrode.

7. The semiconductor device according to claim 6, further comprising a first electrode conduction portion including: a main surface portion exposed from the sealing resin to the first side in the first direction; and a through portion electrically interposed between the first electrode and the main surface portion and penetrating at least a portion of the sealing resin in the first direction. 　 the first semiconductor element has a first element body, a first electrode and a second electrode located on the first side in the first direction, and a third electrode located on the second side in the first direction; The semiconductor device according to claim 3 , wherein the first back surface metal layer is conductively joined to the third electrode. 　 The semiconductor device according to claim 8 , wherein said second electrode forms at least a part of said first main surface. 　 the first semiconductor element has a first element body, a first electrode and a second electrode located on the first side in the first direction, and a third electrode located on the second side in the first direction; the second electrode constitutes at least a portion of the first main surface, The semiconductor device according to claim 1 , wherein said third electrode forms at least a part of said first back surface. 　 the first element body includes SiC; the first electrode is a gate electrode, the second electrode is a source electrode, the third electrode is a drain electrode, 11. The semiconductor device according to claim 6, wherein the first semiconductor element is configured as a MOSFET. 　 the second semiconductor element has a second element body, a fourth electrode and a fifth electrode located on the first side in the first direction, and a sixth electrode located on the second side in the first direction; The semiconductor device according to claim 4 , wherein said second principal surface metal layer is conductively joined to said fifth electrode. 　 The semiconductor device according to claim 12 , wherein the sixth electrode forms at least a part of the second back surface. 　 the second semiconductor element has a second element body, a fourth electrode and a fifth electrode located on the first side in the first direction, and a sixth electrode located on the second side in the first direction; The semiconductor device according to claim 1 , wherein said fifth electrode constitutes at least a part of said second main surface. 　 The semiconductor device according to claim 14 , wherein the sixth electrode forms at least a part of the second back surface. 　 the second element body includes Si; the fourth electrode is a gate electrode, the fifth electrode is an emitter electrode, the sixth electrode is a collector electrode, 16. The semiconductor device according to claim 12, wherein the second semiconductor element is configured as an IGBT.

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