Semiconductor manufacturing apparatus and semiconductor manufacturing method using same

Abstract

According to an embodiment of the present invention, a semiconductor manufacturing apparatus may comprise: a laser generator that provides a laser beam that melts a solder positioned between a substrate and a chip die, to bond the substrate and the chip die; an optical sensor configured to generate an optical beam having a different wavelength from that of the laser beam to measure a separation distance to the upper surface of the chip die; and a control unit which, when the separation distance exceeds a preset first reference value, determines that the solder is melted and controls operation of the laser generator.

Description

Semiconductor manufacturing device and semiconductor manufacturing method using the same

[0001] The present invention relates to a semiconductor manufacturing device and a manufacturing method thereof. The present invention is derived from research conducted as part of the Ministry of Science and ICT's Semiconductor Advanced Packaging Core Technology Development (Project Identification Number: 2710018701, Subproject Number: 00431837, Research Project Name: Development of Core Technology for High-Performance Semiconductor High-Efficiency Fine-Pitch Microbump Bonding Process Equipment, Supervising Organization: PSK Holdings Co., Ltd., Research Period: May 1, 2024 - January 31, 2025).

[0002] As semiconductor devices continue to become smaller and more powerful, semiconductor manufacturing processes require increasingly precise and reliable technologies. In particular, bonding technology in the semiconductor packaging process, which forms packages to protect semiconductor chips and provide electrical connections to the outside world, can significantly impact device performance and reliability.

[0003] Accordingly, the Laser-Assisted Bonding (LAB) process, a technology that uses a laser to bond semiconductor devices and substrates with high precision and speed, was introduced. The LAB process has the advantage of shortening the process time by using a high-absorption laser to heat the substrate in a short time. However, there is a problem in that if the laser irradiation time is exceeded, the solder may melt and flow, causing defects. Conversely, if the irradiation time is insufficient, the solder may not melt sufficiently, causing bonding defects.

[0004] To solve this problem, the melting degree of solder balls was measured by measuring the temperature of semiconductor elements or substrates in the past. However, this has the disadvantage of not being able to accurately measure the actual melting degree of solder because deviations occur depending on the thickness and size of the substrate and the size and number of solder balls.

[0005] The present invention provides a semiconductor manufacturing device and a manufacturing method thereof that accurately determines the melting point of solder in a Laser-Assisted Bonding (LAB) process to prevent the occurrence of solder bonding defects and improve the quality of semiconductors.

[0006] In addition, the present invention provides a semiconductor manufacturing apparatus and a manufacturing method therefor that improve the quality of a semiconductor by measuring a change in the height at which a chip die is arranged to determine whether solder is melted and whether warpage occurs in at least one of the substrate and the chip die.

[0007] In addition, the present invention provides a semiconductor manufacturing apparatus and a manufacturing method thereof that prevents the occurrence of solder bonding defects and improves the quality of semiconductors by determining the optimal melting point of solder according to at least one of the number of solders, size, and thickness of chip die.

[0008] A semiconductor manufacturing apparatus according to an embodiment of the present invention may include a laser generator that provides a laser beam that melts solder positioned between a substrate and a chip die to bond the substrate and the chip die; an optical sensor configured to measure a distance to an upper surface of the chip die by generating an optical beam having a wavelength different from the laser beam; and a control unit that determines that the solder is melted when the distance exceeds a preset first reference value and controls the operation of the laser generator.

[0009] The control unit may determine that warpage has occurred in at least one of the substrate and the chip die when the separation distance is less than a preset second reference value, and control the operation of the laser generator.

[0010] The above first reference value may be a value determined based on at least one of the size and number of the solder input into the input unit.

[0011] The above second reference value may be a value determined according to the thickness of the chip die input to the input unit.

[0012] The optical sensor may be provided in multiple units and placed on the upper portion of an outer region, which is an area closer to the outer periphery of the chip die than the center of the chip die.

[0013] In addition, a semiconductor manufacturing method according to an embodiment of the present invention may include: A) a step of providing a laser beam by a laser generator to melt solder positioned between a substrate and a chip die; B) a step of measuring a distance to an upper surface of the chip die by generating an optical beam having a wavelength different from the laser beam by at least one optical sensor; C) a step of determining by a control unit that the solder is melted when the distance exceeds a preset first reference value; and D) a step of controlling the control unit to provide the laser beam by the laser generator.

[0014] C) The step of determining by the control unit may be a step of determining that the solder has melted if the separation distance exceeds a preset first reference value, and a step of determining that warpage has occurred in at least one of the substrate and the chip die if the separation distance is less than a preset second reference value.

[0015] The optical sensors are provided in multiple numbers, and C) the step of determining by the control unit may be a step of determining that the solder is melted when all of the multiple separation distances measured by the multiple optical sensors exceed the first reference value, and a step of determining that warpage has occurred in at least one of the substrate and the chip die when at least one of the multiple separation distances is less than the second reference value.

[0016] According to an embodiment of the present invention, a semiconductor manufacturing device and a manufacturing method thereof can be provided that accurately determine the melting point of solder in a Laser-Assisted Bonding (LAB) process to prevent the occurrence of solder bonding defects and improve the quality of semiconductors.

[0017] In addition, according to an embodiment of the present invention, a semiconductor manufacturing apparatus and a manufacturing method thereof can be provided that improve the quality of a semiconductor by measuring a change in the height at which a chip die is arranged to determine whether solder is melted and whether warpage occurs in at least one of the substrate and the chip die.

[0018] In addition, according to an embodiment of the present invention, a semiconductor manufacturing apparatus and a manufacturing method thereof can be provided that determine an optimal melting point of solder according to at least one of the number of solders, size, and thickness of a chip die, thereby preventing the occurrence of bonding defects in solder and improving the quality of semiconductors.

[0019] Meanwhile, the effects that can be obtained from the present invention are not limited to the effects mentioned above, and other effects that are not mentioned can be clearly understood by a person having ordinary skill in the technical field to which the present invention belongs from the description below.

[0020] Figure 1 is a front view of a semiconductor manufacturing device according to an embodiment of the present invention.

[0021] FIG. 2 is a top view of a chip die according to an embodiment of the present invention.

[0022] Figure 3 is a schematic diagram for explaining a control unit according to an embodiment of the present invention.

[0023] Figure 4 is an exemplary diagram illustrating a state in which solder is molten according to an embodiment of the present invention.

[0024] Figure 5 is an exemplary diagram for explaining a state in which warpage occurs according to an embodiment of the present invention.

[0025] Figure 6 is a flowchart of a semiconductor manufacturing method according to an embodiment of the present invention.

[0026] Figure 7 is a flowchart of a semiconductor manufacturing method according to another embodiment of the present invention.

[0027] Hereinafter, embodiments of the present invention will be described in more detail with reference to the attached drawings. The embodiments of the present invention may be modified in various ways, and the scope of the present invention should not be construed as being limited to the embodiments described below. These embodiments are provided to more fully explain the present invention to those of ordinary skill in the art. Accordingly, the shapes of elements in the drawings may be exaggerated for clarity.

[0028] In order to clearly solve the problem to be solved by the present invention, the composition of the invention is described in detail with reference to the attached drawings based on a preferred embodiment of the present invention, and when assigning reference numbers to components in the drawings, the same reference numbers are assigned to the same components even if they are in different drawings, and when necessary, components in other drawings may be cited when describing the drawings.

[0029] FIG. 1 is a front view of a semiconductor manufacturing device according to an embodiment of the present invention, FIG. 2 is a top view of a chip die according to an embodiment of the present invention, FIG. 3 is a schematic diagram for explaining a control unit according to an embodiment of the present invention, FIG. 4 is an exemplary diagram for explaining a state in which solder is melted according to an embodiment of the present invention, and FIG. 5 is an exemplary diagram for explaining a state in which warpage occurs according to an embodiment of the present invention.

[0030] A semiconductor manufacturing device according to an embodiment of the present invention can provide a laser to solder (13) placed between a substrate (11) and a chip die (12) for mutual bonding of the substrate and the chip die in a Laser-Assisted Bonding (LAB) process.

[0031] Here, the chip die (12) means a core component of a semiconductor (10) that includes various circuits and elements, and the solder (13) may mean a type of conductive connecting means that forms an electrical connection between an electronic component (e.g., a chip die) and a substrate (11) to transmit an electrical signal.

[0032] For example, in the LAB process, the solder (13) can be electrically connected to the substrate (11) and the chip die (12) through a step (Ramp-up step) in which the solder (13) is placed in a ball shape to make point contact with the substrate (11) and the chip die (12), a step (Dwell step) in which at least a portion of the outer surface is melted by at least one of the substrate (11) and the chip die (12) heated by a laser beam (120) generated from the laser body (110) and makes surface contact with the substrate (11) and the chip die (12), and a step (Ramp-down step) in which the melted solder (13) cools and solidifies to bond the substrate (11) and the chip die (12). At this time, the solder (13) can be placed in multiple pieces between the substrate (11) and the chip die (12).

[0033]

[0034] Referring to FIGS. 1 to 5, a semiconductor manufacturing device according to an embodiment of the present invention may include a laser generator (100), an optical sensor (200), a control unit (300), an input unit (400), and a database (500).

[0035] The laser generator (100) can provide a laser beam (120) that melts solder (13) positioned between the substrate (11) and the chip die (12) to bond the substrate (11) and the chip die (12). For example, the laser generator (100) can be connected to a frame (2). One end of the frame (2) can be connected to the stage (1). In addition, the frame (2) can be arranged to separate the laser generator (100) from the stage (1).

[0036] A substrate (11) may be placed on top of a stage (1), a chip die (12) may be placed on top of the substrate (11), and solder (13) may be placed between the substrate (11) and the chip die (12). For example, the solder (13) may be a spherical solder ball. The solder (13) may be placed so as to be bonded to one of the substrate (11) and the chip die (12), and to be in point contact with the other (as described above in the ramp-up step). Thereafter, the solder (13) may be bonded to the other by a laser beam (120) generated from a laser generator (100).

[0037] Specifically, the laser generator (100) provides a laser beam (120) generated from the laser body (110) to the upper surface of the chip die (12), whereby at least a portion of the outer surface of the solder (13) can be melted by at least one of the heated substrate (11) and the chip die (12). At this time, the solder (13) can be melted and come into surface contact (the previously described Dwell step) with one of the substrate (11) and the chip die (12) to be bonded.

[0038] The optical sensor (200) may be configured to measure a distance (D) from the top surface of the chip die (12) placed on the stage (1) using an optical beam (220) generated from the optical body (210). For example, the optical sensor (200) may be at least one of a laser rangefinder, a LiDAR, an ultrasonic rangefinder, and an infrared rangefinder.

[0039] At this time, the optical beam (220) may have a different wavelength from the laser beam (120). Therefore, even if the optical beam (220) and the laser beam (120) are provided simultaneously, they may not interfere with each other because they have different wavelengths, so the laser generator (100) and the optical sensor (200) may be used simultaneously.

[0040] The optical sensor (200) may be provided in multiple pieces and placed on the upper part of the outer region (S2), which is an area closer to the outer periphery of the chip die (12) than the center (O) of the chip die (12).

[0041] Specifically, the chip die (12) may have a square plate shape, and the upper surface of the chip die (12) may be divided into a central region (S1) and an outer region (S2) based on a boundary line (L). At this time, the boundary line (L) may be an imaginary line formed at a position where a distance (L1) from the center (O) of the chip die (12) and a distance (L2) from the outer periphery of the chip die (12) are equal.

[0042] The central region (S1) may be a square-shaped region located at the center of the chip die (12) and formed to include the center (O) of the chip die (12). The outer region (S2) may be a square ring-shaped region surrounding the central region (S1).

[0043] The optical sensor (200) may be placed on the upper portion of the outer region (S2), which is an area where warpage is likely to occur due to at least one of a difference in thermal expansion, a stress concentration, and a difference in cooling rate.

[0044] In addition, the optical sensor (200) may be provided in multiple numbers. For example, the multiple optical sensors (200) may be arranged on the upper portion of the outer region (S2) of the chip die (12), and the multiple optical sensors (200) may be arranged at a certain interval from each other in an arc direction based on the center (O) of the chip die (12). A detailed description thereof will be described together with the control unit (300) described below.

[0045] The control unit (300) can control the operation of the laser generator (100) by determining that the solder (13) is sufficiently melted to bond the substrate (11) and the chip die (12) when the separation distance (D) measured by the optical sensor (200) exceeds a preset first reference value (D′). It is preferable to control the operation of the laser generator (100) to stop.

[0046] Here, the first reference value (D′) means a value obtained by adding the height change value of the solder (13) that changes when the solder (13) is melted for bonding the substrate (11) and the chip die (12) to the initial distance, which is the distance at which the chip die (12) is spaced from the optical sensor (200) before the laser beam (120) is provided.

[0047] In addition, when a plurality of optical sensors (200) are provided, the control unit (300) can determine that the solder is melted when all of the plurality of separation distances (D) measured by the plurality of optical sensors (200) exceed the first reference value (D′).

[0048] This is to stop providing the laser beam (120) when the plurality of solders (13) arranged between the substrate (11) and the chip die (12) have reached the optimal melting state for bonding. This prevents the occurrence of a bonding defect between the substrate (11) and the chip die (12) due to the plurality of solders (13) all being melted.

[0049] The control unit (300) can control the operation of the laser generator (100) by determining that warpage has occurred in at least one of the substrate (11) and the chip die (12) when the separation distance (D) is less than the preset second reference value (D″). It is preferable to control the operation of the laser generator (100) to stop.

[0050] Here, the second reference value (D″) means a value excluding the height change value that will be changed due to warping of at least one of the substrate (11) and the chip die (12) by the occurrence of warpage at the initial distance, which is the distance at which the chip die (12) is spaced from the optical sensor (200) before the laser beam (120) is provided.

[0051] In addition, when a plurality of optical sensors (200) are provided, the control unit (300) can determine that warpage has occurred in at least one of the substrate (11) and the chip die (12) when at least one of the plurality of separation distances (D) is less than the second reference value (D″).

[0052] This is to detect that warpage has occurred in at least a portion of at least one of the substrate (11) and the chip die (12). By this, warpage occurring in at least a local portion of at least one of the substrate (11) and the chip die (12) can also be detected, thereby improving the quality of the semiconductor.

[0053] For example, the first reference value (D′) and the second reference value (D″) can be input from the input unit (400) and preset.

[0054] As another example, the control unit (300) can select the first reference value (D′) and the second reference value (D″) through data stored in the database (500). Specifically, the control unit (300) can receive at least one of information on the size and number of solders (13) and the thickness of the chip die (12) from the input unit (400), and select the first reference value (D′) and the second reference value (D″) according to the size and number of solders (13) and the thickness of the chip die (12) received through the database (500).

[0055] A table of correspondence between a first reference value (D′) and a second reference value (D″) corresponding to the size and number of solders (13) and the thickness of the chip die (12) can be stored in the database (500).

[0056] For example, the corresponding table may store an optimal first reference value (D′) and a second reference value (D″) that prevent bonding failures from occurring during the LAB process and detect warpage in at least one of the substrate (11) and the chip die (12) according to the size and number of solders (13) and the thickness of the chip die (12). At this time, the optimal first reference value (D′) and the second reference value (D″) are found through repeated experiments and may be preset and stored in the database (500).

[0057] Accordingly, the control unit (300) controls the operation of the laser generator (100) to prevent bonding failures from occurring between the substrate (11) and the chip die (12) in the LAB process, and determines and controls whether warpage occurs in at least one of the substrate (11) and the chip die (12), thereby increasing the efficiency of the LAB process and improving the quality of the produced semiconductor.

[0058]

[0059] Figure 6 is a flowchart of a semiconductor manufacturing method according to an embodiment of the present invention.

[0060] Referring to FIGS. 1 to 6 together, the method may include a step of providing a laser beam (S10), a step of measuring a separation distance (S20), a step of determining by a control unit (S30), and a step of controlling the provision of a laser beam (S40).

[0061] In the step of providing a laser beam (S10), a laser generator (100) can provide a laser beam (120) so that solder (13) positioned between a substrate (11) and a chip die (12) is melted.

[0062] For example, the solder (13) may be a spherical solder ball. Before applying the laser beam (120), the solder (13) may be bonded to one of the substrate (11) and the chip die (12) and placed in point contact with the other (as described above in the ramp-up step).

[0063] The solder (13) can be bonded to the remaining one of the substrate (11) and the chip die (12) by a laser beam (120) generated from the laser generator (100).

[0064] Specifically, the laser generator (100) provides a laser beam (120) generated from the laser body (110) to the upper surface of the chip die (12), whereby at least a portion of the outer surface of the solder (13) can be melted by at least one of the heated substrate (11) and the chip die (12). At this time, the solder (13) can be melted and come into surface contact (the previously described Dwell step) with one of the substrate (11) and the chip die (12) to be bonded.

[0065] In the step (S20) of measuring the distance, at least one optical sensor (200) can generate an optical beam (220) having a wavelength different from that of the laser beam (120) to measure the distance (D) to the upper surface of the chip die (12). For example, the optical sensor (200) can be at least one of a laser rangefinder, a LiDAR, an ultrasonic rangefinder, and an infrared rangefinder.

[0066] At this time, it is preferable that the optical beam (220) have a different wavelength from the laser beam (120). Therefore, even if the optical beam (220) and the laser beam (120) are provided simultaneously, they may not interfere with each other because they have different wavelengths, so the laser generator (100) and the optical sensor (200) may be used simultaneously.

[0067] The optical sensor (200) may be provided in multiple pieces and placed on the upper part of the outer region (S2), which is an area closer to the outer periphery of the chip die (12) than the center (O) of the chip die (12).

[0068] Specifically, the chip die (12) may have a square plate shape, and the upper surface of the chip die (12) may be divided into a central region (S1) and an outer region (S2) based on a boundary line (L). The central region (S1) may be a square-shaped region formed to include the center (O) of the chip die (12) and located at the center of the chip die (12). The outer region (S2) may be a square ring-shaped region surrounding the central region (S1).

[0069] The optical sensor (200) is placed on the upper part of the outer region (S2), which is an area where warpage is likely to occur due to at least one of a difference in thermal expansion, a stress concentration, and a difference in cooling rate, and can measure the distance (D) to the upper surface of the chip die (12).

[0070] In the step (S30) where the control unit determines, if the separation distance (D) exceeds the preset first reference value (D′), the control unit (300) can determine that the solder (13) has melted.

[0071] Here, the first reference value (D′) means a value obtained by adding the height change value of the solder (13) that changes when the solder (13) is melted for bonding the substrate (11) and the chip die (12) to the initial distance, which is the distance at which the chip die (12) is spaced from the optical sensor (200) before the laser beam (120) is provided.

[0072] For example, the first reference value (D') may be input from an input unit (400) and preset. At this time, the input unit (400) may be a touchpad, a keypad, and / or a mechanical button, and any form of device for inputting the first reference value (D') may be permitted.

[0073] In the step (S40) of controlling the provision of a laser beam, the control unit (300) can control the provision of a laser beam (120) of the laser generator (100).

[0074] For example, if the separation distance (D) measured by the optical sensor (200) exceeds a preset first reference value (D′), the laser generator (100) may stop irradiating the upper surface of the chip die (12) with a laser beam (120).

[0075]

[0076] Figure 7 is a flowchart of a semiconductor manufacturing method according to another embodiment of the present invention.

[0077] Referring to FIGS. 1 to 7 together, the semiconductor manufacturing method according to another embodiment of the present invention has a different configuration of the step (S30) determined by the control unit compared to the semiconductor manufacturing method according to the embodiment of the present invention illustrated in FIG. 6. Therefore, only the different configurations will be described below, and a detailed description of the same configurations with overlapping drawing reference numerals will be omitted.

[0078] In the step (S301) where the control unit determines, if the separation distance (D) exceeds a preset first reference value (D′), it is determined that the solder (13) has melted, and if the separation distance (D) is less than a preset second reference value (D″), it is determined that warpage has occurred in at least one of the substrate (11) and the chip die (12).

[0079] Here, the first reference value (D′) means a value obtained by adding the height change value of the solder (13) that changes when the solder (13) is melted for bonding the substrate (11) and the chip die (12) to the initial distance, which is the distance at which the chip die (12) is spaced from the optical sensor (200) before the laser beam (120) is provided.

[0080] Here, the second reference value (D″) means a value excluding the height change value that will be changed due to warping of at least one of the substrate (11) and the chip die (12) by the occurrence of warpage at the initial distance, which is the distance at which the chip die (12) is spaced from the optical sensor (200) before the laser beam (120) is provided.

[0081] For example, the first reference value (D′) and the second reference value (D″) may be input from an input unit (400) and preset. At this time, the input unit (400) may be a touchpad, a keypad, and / or a mechanical button, and any form of device for inputting the first reference value (D′) and the second reference value (D″) may be permitted.

[0082] As another example, the control unit (300) can select the first reference value (D′) and the second reference value (D″) through data stored in the database (500). Specifically, the control unit (300) can receive at least one of information on the size and number of solders (13) and the thickness of the chip die (12) from the input unit (400), and select the first reference value (D′) and the second reference value (D″) according to the size and number of solders (13) and the thickness of the chip die (12) received through the database (500).

[0083] A table of correspondence between a first reference value (D′) and a second reference value (D″) corresponding to the size and number of solders (13) and the thickness of the chip die (12) can be stored in the database (500).

[0084] For example, the corresponding table may store an optimal first reference value (D′) and a second reference value (D″) that can prevent bonding failures from occurring during the LAB process and detect warpage in at least one of the substrate (11) and the chip die (12) according to the size and number of solders (13) and the thickness of the chip die (12). At this time, the optimal first reference value (D′) and the second reference value (D″) are found through repeated experiments and can be preset and stored in the database (500).

[0085] At this time, a plurality of optical sensors (200) may be provided. The optical sensors (200) may be arranged to be spaced apart from each other, for example, they may be arranged on the upper portion of the outer region (S2) of the chip die (12), and a plurality of optical sensors (200) may be arranged to be spaced apart from each other by a certain interval in an arc direction based on the center (O) of the chip die (12).

[0086] In the step (S30) where the control unit determines, if all of the plurality of separation distances (D) measured by the plurality of optical sensors (200) exceed the first reference value (D′), it can be determined that the solder is melted.

[0087] This is to stop providing the laser beam (120) when the plurality of solders (13) arranged between the substrate (11) and the chip die (12) have reached the optimal melting state for bonding. This prevents the occurrence of a bonding defect between the substrate (11) and the chip die (12) due to the plurality of solders (13) all being melted.

[0088] And, in the step (S30) where the control unit determines, if at least one of the plurality of separation distances (D) is less than the second reference value (D″), it can be determined that warpage has occurred in at least one of the substrate (11) and the chip die (12).

[0089] This is to detect the occurrence of warpage on at least a portion of at least one of the substrate (11) and the chip die (12). By this, warpage occurring in a local area can also be detected, thereby improving the quality of the semiconductor.

[0090] The detailed description above is illustrative of the present invention. Furthermore, the foregoing description illustrates preferred embodiments of the present invention, and the present invention can be used in various other combinations, modifications, and environments. In other words, changes or modifications may be made within the scope of the inventive concepts disclosed herein, the scope equivalent to the written disclosure, and / or the scope of technology or knowledge in the art. The written embodiments illustrate the best possible state for implementing the technical idea of ​​the present invention, and various modifications required for specific applications and uses of the present invention are also possible. Therefore, the detailed description of the present invention above is not intended to limit the present invention to the disclosed embodiments. Furthermore, the appended claims should be construed to include other embodiments.

Claims

1. A laser generator providing a laser beam that melts solder positioned between the substrate and the chip die to bond the substrate and the chip die; An optical sensor configured to measure a distance to the upper surface of the chip die by generating an optical beam having a wavelength different from the laser beam; and A semiconductor manufacturing device, comprising a control unit that determines that the solder is melted and controls the operation of the laser generator when the distance exceeds a preset first reference value.

2. In paragraph 1, A semiconductor manufacturing device, wherein the control unit determines that warpage has occurred in at least one of the substrate and the chip die when the separation distance is less than a preset second reference value and controls the operation of the laser generator.

3. In paragraph 2, A semiconductor manufacturing device, wherein the first reference value is a value determined based on at least one of the size and number of the solder input to the input unit.

4. In paragraph 3, A semiconductor manufacturing device, wherein the second reference value is a value determined according to the thickness of the chip die input to the input unit.

5. In paragraph 2, A semiconductor manufacturing device, wherein the optical sensor is provided in multiple units and is positioned on the upper portion of an outer region, which is an area closer to the outer periphery of the chip die than the center of the chip die. 6.A) A step of providing a laser beam to a laser generator so that solder positioned between the substrate and the chip die is melted; B) a step of measuring a distance to the upper surface of the chip die by generating an optical beam having a wavelength different from the laser beam by at least one optical sensor; C) a step in which the control unit determines that the solder is melted when the above-described separation distance exceeds a preset first reference value; and D) A semiconductor manufacturing method, comprising a step of controlling the provision of the laser beam from the laser generator by the control unit.

7. In paragraph 6, C) The step determined by the above control unit is: A semiconductor manufacturing method, wherein the step of determining that the solder has melted when the above-mentioned separation distance exceeds a preset first reference value and determining that warpage has occurred in at least one of the substrate and the chip die when the above-mentioned separation distance is less than a preset second reference value.

8. In paragraph 7, The above optical sensors are provided in multiple units, C) A semiconductor manufacturing method, wherein the step of determining by the control unit is a step of determining that the solder has melted if all of the plurality of separation distances measured by the plurality of optical sensors exceed the first reference value, and a step of determining that warpage has occurred in at least one of the substrate and the chip die if at least one of the plurality of separation distances is less than the second reference value.

9. In paragraph 8, A semiconductor manufacturing method, wherein the first reference value is a value determined based on at least one of the size and number of the solder input to the input unit.

10. In paragraph 9, A semiconductor manufacturing method, wherein the second reference value is a value determined according to the thickness of the chip die input to the input unit.

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