Method for improving stability of perovskite solar cell

Abstract

The present invention relates to the technical field of perovskite solar cell manufacturing, and relates to a method for improving the stability of a perovskite solar cell. The internal structure of a perovskite solar cell comprises, from bottom to top, a substrate, a conductive layer, a hole transport layer, a perovskite absorption layer, an electron transport layer, and a back electrode layer; an interface layer is further provided between the hole transport layer and the perovskite layer; and a nanoparticle layer is further provided between the hole transport layer and the interface layer. The method comprises the following steps: first, preparing a nanoparticle layer on a hole transport layer, and then, preparing an interface layer on the nanoparticle layer, wherein the hole transport layer is prepared from NiOx, and the nanoparticle layer is prepared from any one of Al2O3, SnO2, SiO2, and MgO nanoparticles. In the present disclosure, the nanoparticle layer is arranged between the hole transport layer and the interface layer to improve the bonding force between the interface layer and the hole transport layer, thereby improving the stability of the perovskite solar cell.

Description

A method to improve the stability of perovskite solar cells Technical Field

[0001] This invention belongs to the field of perovskite solar cell fabrication technology, and specifically relates to a method for improving the stability of perovskite solar cells. Background Technology

[0002] Existing large-area perovskite solar cells generally employ an inverted structure, namely: TCO / Hole Transport Layer (HTL) / Perovskite / Electron Transport Layer (ETL) / Electron Electron. To meet commercialization and stability requirements, HTLs primarily use nickel oxide (NiO). x ), while NiO x There are numerous defects in the interfacial contact between NiO and perovskite, while NiO x Chinese Ni 3+ It can interact with I in perovskite 2- Redox reactions occur, accelerating the decomposition of perovskite. Therefore, to improve device stability, self-assembled molecules (SAMs) are commonly used to fabricate perovskite on NiO. x The surface acts as an interface layer, forming TCO / NiO x The device structure of the SAM / perovskite / ETL / electrode. The SAM interface layer can improve the quality of the perovskite and reduce interface defects under the perovskite, and can also hinder Ni to a certain extent. 3+ with I 2- A redox reaction occurs, thereby enhancing the properties of perovskite. However, SAM primarily enhances its properties through acidic groups in the molecule, such as carboxyl and phosphate groups, reacting with NiO. x The adsorption forces formed by the interaction of surface-adsorbed hydroxyl groups on NiO x Surface. Due to NiO x The hydroxyl groups adsorbed on the surface are physically adsorbed, with weak binding forces, and can easily detach from NiO under external conditions. x The surface, which in turn causes the SAM molecules on its surface to detach, resulting in SAM not being able to completely cover the NiO. x The surface layer is damaged, thus disrupting the interfacial properties and accelerating the degradation of perovskite. To address this issue, it is necessary to... x Introducing chemisorbed hydroxyl groups into the surface enhances the performance of NiO. x The interaction force between the perovskite solar cell and the SAM enhances the stability of the perovskite solar cell. Summary of the Invention

[0003] The technical problem to be solved by the present invention is to provide a method for improving the stability of perovskite solar cells by setting a nanoparticle layer between the hole transport layer and the interface layer, thereby improving the bonding force between the interface layer and the hole transport layer and thus improving the stability of perovskite solar cells.

[0004] This invention provides a method for improving the stability of perovskite solar cells. The internal structure of the perovskite solar cell includes, from bottom to top, a substrate, a conductive layer, a hole transport layer, a perovskite absorber layer, an electron transport layer, and a back electrode layer. An interface layer is disposed between the hole transport layer and the perovskite layer, and a nanoparticle layer is disposed between the hole transport layer and the interface layer. The method includes the following steps: first, preparing a nanoparticle layer on the hole transport layer, and then preparing an interface layer on the nanoparticle layer; wherein, the material for preparing the hole transport layer is NiO. x The nanoparticle layer is prepared from any one of Al2O3, SnO2, SiO2, or MgO nanoparticles.

[0005] This invention uses NiO x A nanoparticle layer is deposited on the surface of the hole transport layer to create a substance that strongly interacts with the molecules of the SAM interface layer, thereby preventing the molecules from detaching from the SAM interface layer. Because the basic oxide nanoparticles have a very large specific surface area, their surface contains a large number of chemisorbed hydroxyl groups. These hydroxyl groups can interact strongly with the SAM interface layer, enhancing the interaction between the SAM interface layer and NiO. x The interaction forces between hole transport layers. Therefore, this invention uses, but is not limited to, alkaline oxides such as alumina, silicon oxide, tin dioxide, and magnesium dioxide as nanoparticle layers to enhance the interaction between the SAM interface layer and NiO. x The binding force between hole transport layers improves the stability of perovskite solar cells.

[0006] Furthermore, the preparation method of the nanoparticle layer is as follows: dissolve the nanoparticles in isopropanol, pure water or ethanol at a concentration of 1 mg / mL to obtain a nanoparticle solution, then coat the nanoparticle solution onto the surface of the prepared hole transport layer, and then anneal it in air at 100℃~250℃ for 10~20 minutes to obtain the nanoparticle layer.

[0007] Furthermore, the method for preparing the interface layer is as follows: the preparation material of the interface layer is dissolved in chloroform, and then coated onto the surface of the prepared nanoparticle layer. The interface layer is then annealed in air at 80°C to 100°C for 10 minutes to obtain the interface layer.

[0008] Furthermore, the material used to prepare the interface layer is any one of [4-(9H-carbazole-9-yl)butyl]phosphonic acid (4PACz), (3,6-dimethoxy-9H-carbazole-9-yl)trimethoxyphenylsilane (DC-TMPS), poly[4-(9H-carbazole-9-yl)butyl]phosphonic acid (Poly-4PACz), and 4-(3,6-dimethyl-9H-carbazole-9-yl)butyl]phosphonic acid (Me-4PACz).

[0009] Furthermore, the thickness of the nanoparticle layer is 0.1 nm to 0.5 nm.

[0010] Furthermore, the thickness of the interface layer is 8nm to 15nm.

[0011] Furthermore, the conductive layer is made of a transparent conductive oxide (TCO), including any one of indium tin oxide (ITO), aluminum-doped zinc oxide (AZO), fluorine-doped tin oxide (FTO), and antimony-doped tin oxide (ATO).

[0012] Furthermore, the perovskite absorber layer is prepared using Cs. 0.05 (FA 0.83 MA 0.17 ) 0.95 Pb(I 0.83 Br 0.17 3.

[0013] Compared with existing technologies, the present invention provides a method for improving the stability of perovskite solar cells. The internal structure of the perovskite solar cell includes, from bottom to top, a substrate, a conductive layer, a hole transport layer, a perovskite absorber layer, an electron transport layer, and a back electrode layer. An interface layer is further disposed between the hole transport layer and the perovskite layer, and a nanoparticle layer is further disposed between the hole transport layer and the interface layer. The method includes the following steps: first, preparing a nanoparticle layer on the hole transport layer, and then preparing an interface layer on the nanoparticle layer; wherein, the hole transport layer is prepared using NiO. x The nanoparticle layer is prepared from any one of Al2O3, SnO2, SiO2, or MgO nanoparticles. This invention sets a nanoparticle layer between the hole transport layer and the interface layer, enhancing the bonding force between the interface layer and the hole transport layer, thereby improving the stability of perovskite solar cells. Attached Figure Description

[0014] Figure 1 is a schematic diagram of the aging test degradation curves of perovskite solar cells prepared in various embodiments and comparative examples of the present invention under a dual 85 environment.

[0015] Figure 2 is a schematic diagram of the efficiency degradation of perovskite solar cells prepared in various embodiments and comparative examples of the present invention after 100 kWh of ultraviolet aging. Detailed Implementation

[0016] To make the technical problems to be solved, the technical solutions, and the beneficial effects of the present invention clearer, the present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present invention and are not intended to limit the present invention.

[0017] A preferred embodiment of the method for improving the stability of perovskite solar cells according to the present invention includes, from bottom to top, a substrate, a conductive layer, a hole transport layer, a perovskite absorber layer, an electron transport layer, and a back electrode layer. An interface layer is further disposed between the hole transport layer and the perovskite layer, and a nanoparticle layer is further disposed between the hole transport layer and the interface layer. The method includes the following steps: first, preparing a nanoparticle layer on the hole transport layer, and then preparing an interface layer on the nanoparticle layer; wherein, the material for preparing the hole transport layer is NiO. x The nanoparticle layer is prepared from any one of Al2O3, SnO2, SiO2, or MgO nanoparticles.

[0018] The method for preparing the nanoparticle layer is as follows: dissolve the nanoparticles in isopropanol or ethanol at a concentration of 1 mg / mL to obtain a nanoparticle solution, then coat the nanoparticle solution onto the surface of the prepared hole transport layer, and then anneal it in air at 180℃~250℃ for 8~15 minutes to obtain the nanoparticle layer.

[0019] The method for preparing the interface layer is as follows: the preparation material of the interface layer is dissolved in chloroform, and then coated onto the surface of the prepared nanoparticle layer. The interface layer is then annealed in air at 80℃~100℃ for 10 minutes to obtain the interface layer.

[0020] The material used to prepare the interface layer is any one of [4-(9H-carbazole-9-yl)butyl]phosphonic acid (4PACz), (3,6-dimethoxy-9H-carbazole-9-yl)trimethoxyphenylsilane (DC-TMPS), poly[4-(9H-carbazole-9-yl)butyl]phosphonic acid (Poly-4PACz), and 4-(3,6-dimethyl-9H-carbazole-9-yl)butyl]phosphonic acid (Me-4PACz).

[0021] The thickness of the nanoparticle layer is 0.1 nm to 0.5 nm.

[0022] The thickness of the interface layer is 8nm to 15nm.

[0023] The conductive layer is made of transparent conductive oxide (TCO), including any one of indium tin oxide (ITO), aluminum-doped zinc oxide (AZO), fluorine-doped tin oxide (FTO), and antimony-doped tin oxide (ATO).

[0024] The perovskite absorber layer is prepared from Cs. 0.05 (FA 0.83 MA 0.17 ) 0.95 Pb(I 0.83 Br 0.17 3.

[0025] The following specific embodiments further illustrate a method for improving the stability of perovskite solar cells according to the present invention.

[0026] Example 1

[0027] The first embodiment of the method for improving the stability of perovskite solar cells according to the present invention, taking the method for fabricating perovskite solar cells as an example, includes the following steps:

[0028] Step 11: Use FTO as the substrate and ultrasonically clean it with cleaning agent, deionized water, acetone and isopropanol. After drying with nitrogen, treat it with ultraviolet ozone cleaning machine for 20 minutes.

[0029] Step 12, using NiO x As a hole transport layer: First, NiO... x NiO was obtained by dispersing particles in deionized water at a concentration of 20 mg / mL and then sonicating in an ultrasonic bath for 24 hours. x Particle dispersion. Then, NiO is coated using a coating method. x Nanoparticle solution was coated onto FTO glass, and then annealed in air at 120°C for 30 min to obtain NiO. x Hole transport layer.

[0030] Step 13: Preparation of a nanoparticle layer on the hole transport layer: First, a commercially available 20%–30% Al2O3 nanoparticle dispersion is dispersed in isopropanol or ethanol at a concentration of 1 mg / mL, and then coated onto the FTO / NiO layer. x On the surface, a layer of approximately 0.2 nm thick FTO / NiO is formed. x The Al2O3 structure was then subjected to air treatment at 200°C for 10 minutes.

[0031] Step 14: Prepare an interface layer on the nanoparticle layer: Dissolve 4PACz in chloroform or other solvents, and then prepare an interface layer on FTO / NiO by coating. x The Al2O3 surface, approximately 10 nm thick, forms an FTO / NiO layer.x The structure is / Al2O3 / 4PACz, and then it is treated in air at 100°C for 10 minutes.

[0032] Step 15: Prepare a perovskite absorber layer on the interface layer; dissolve a certain proportion of CsI, FAI, MAI, PbI2, and PbBr2 in a mixed solvent of DMSO and DMF to prepare a precursor solution for the perovskite absorber layer. Then, coat the precursor solution onto FTO / NiO using a coating method. x The perovskite wet film sample was then heat-treated at 150°C for 10 min on a heating stage to obtain Cs. 0.05 (FA 0.83 MA 0.17 ) 0.95 Pb(I 0.83 Br 0.17 3 floors.

[0033] Step 16: Deposit an electron transport layer of fullerene derivative [6,6]-phenyl-C61-butyrate methyl ester (PCBM) onto the perovskite absorber layer using a thermal evaporation method. A thermal evaporation coating machine with a laminar flow rate of ~1.0 × 10⁻⁶ m³ / s is used. -4 Under a vacuum of Pa, 200 nm of silver is thermally evaporated onto the electron transport layer to form a metallic silver back electrode layer, thus completing the fabrication of a perovskite solar cell.

[0034] Example 2

[0035] A second embodiment of the method for improving the stability of perovskite solar cells according to the present invention, taking the method for preparing perovskite solar cells as an example, includes the following steps:

[0036] Step 21: Use FTO as the substrate and ultrasonically clean it with cleaning agent, deionized water, acetone and isopropanol. After drying with nitrogen, treat it with ultraviolet ozone cleaning machine for 20 minutes.

[0037] Step 22, using NiO x As a hole transport layer: First, NiO... x NiO was obtained by dispersing particles in deionized water at a concentration of 20 mg / mL and then sonicating in an ultrasonic bath for 24 hours. x Particle dispersion. Then, NiO is coated using a coating method. x Nanoparticle solution was coated onto FTO glass, and then annealed in air at 120°C for 30 min to obtain NiO. x Hole transport layer.

[0038] Step 23: Preparation of a nanoparticle layer on the hole transport layer: First, commercially available 20% SiO2 nanoparticles were dispersed in pure water at a concentration of 1 mg / mL, and then coated onto the FTO / NiO layer. x On the surface, a layer of approximately 0.5 nm thick FTO / NiO is formed. x The / SiO2 structure is then subjected to air treatment at 100°C for 10 minutes.

[0039] Step 24: Prepare an interface layer on the nanoparticle layer: Dissolve 4PACz in chloroform or other solvents, and then prepare an interface layer on FTO / NiO by coating. x The SiO2 surface is 10 nm thick, forming an FTO / NiO2 / Si ... x The structure is / SiO2 / 4PACz, and then it is treated in air at 100°C for 10 minutes.

[0040] Step 25: Prepare a perovskite absorber layer on the interface layer; dissolve a certain proportion of CsI, FAI, MAI, PbI2, and PbBr2 in a mixed solvent of DMSO and DMF to prepare a precursor solution for the perovskite absorber layer. Then, coat the precursor solution onto FTO / NiO using a coating method. x The perovskite wet film sample was then heat-treated at 150°C for 10 min on a heating stage to obtain Cs. 0.05 (FA 0.83 MA 0.17 ) 0.95 Pb(I 0.83 Br 0.17 3 floors.

[0041] Step 16: Deposit an electron transport layer of fullerene derivative [6,6]-phenyl-C61-butyrate methyl ester (PCBM) onto the perovskite absorber layer using a thermal evaporation method. A thermal evaporation coating machine with a laminar flow rate of ~1.0 × 10⁻⁶ m³ / s is used. -4 Under a vacuum of Pa, 200 nm of silver is thermally evaporated onto the electron transport layer to form a metallic silver back electrode layer, thus completing the fabrication of a perovskite solar cell.

[0042] Example 3

[0043] A third embodiment of the method for improving the stability of perovskite solar cells according to the present invention, taking the method for preparing perovskite solar cells as an example, includes the following steps:

[0044] Step 31: Using FTO as the substrate, ultrasonically clean it with cleaning agent, deionized water, acetone and isopropanol, dry it with nitrogen, and then treat it with ultraviolet ozone cleaning machine for 20 minutes.

[0045] Step 32, using NiOx As a hole transport layer: First, NiO... x NiO was obtained by dispersing particles in deionized water at a concentration of 20 mg / mL and then sonicating in an ultrasonic bath for 24 hours. x Particle dispersion. Then, NiO is coated using a coating method. x Nanoparticle solution was coated onto FTO glass, and then annealed in air at 120°C for 30 min to obtain NiO. x Hole transport layer.

[0046] Step 33: Preparation of a nanoparticle layer on the hole transport layer: First, commercially available 20% SnO2 nanoparticles were dispersed in pure water at a concentration of 1 mg / mL, and then coated onto FTO / NiO. x On the surface, a thickness of approximately 1 nm is formed, forming FTO / NiO. x The / SnO2 structure was then subjected to air treatment at 150°C for 10 minutes.

[0047] Step 34: Prepare an interface layer on the nanoparticle layer: Dissolve 4PACz in chloroform or other solvents, and then prepare an interface layer on FTO / NiO by coating. x / SnO2 surface, 10nm thick, forming FTO / NiO x The / SnO2 / 4PACz structure was then subjected to air treatment at 100°C for 10 minutes.

[0048] Step 35: Prepare a perovskite absorber layer on the interface layer; dissolve a certain proportion of CsI, FAI, MAI, PbI2, and PbBr2 in a mixed solvent of DMSO and DMF to prepare a precursor solution for the perovskite absorber layer. Then, coat the precursor solution onto FTO / NiO using a coating method. x The perovskite wet film sample was then heat-treated at 150°C for 10 min on a heating stage to obtain Cs. 0.05 (FA 0.83 MA 0.17 ) 0.95 Pb(I 0.83 Br 0.17 3 floors.

[0049] Step 36: Deposit an electron transport layer of fullerene derivative [6,6]-phenyl-C61-butyrate methyl ester (PCBM) onto the perovskite absorber layer using a thermal evaporation method. A thermal evaporation coating machine with a laminar flow rate of ~1.0 × 10⁻⁶ m³ / s is used. -4 Under a vacuum of Pa, 200 nm of silver is thermally evaporated onto the electron transport layer to form a metallic silver back electrode layer, thus completing the fabrication of a perovskite solar cell.

[0050] Example 4

[0051] A fourth embodiment of the method for improving the stability of perovskite solar cells according to the present invention, taking the method for fabricating perovskite solar cells as an example, includes the following steps:

[0052] Step 41: Use FTO as the substrate and ultrasonically clean it with cleaning agent, deionized water, acetone and isopropanol. After drying with nitrogen, treat it with ultraviolet ozone cleaning machine for 20 minutes.

[0053] Step 42, using NiO x As a hole transport layer: First, NiO... x NiO was obtained by dispersing particles in deionized water at a concentration of 20 mg / mL and then sonicating in an ultrasonic bath for 24 hours. x Particle dispersion. Then, NiO is coated using a coating method. x Nanoparticle solution was coated onto FTO glass, and then annealed in air at 120°C for 30 min to obtain NiO. x Hole transport layer.

[0054] Step 43: Preparation of a nanoparticle layer on the hole transport layer: First, commercially available 30% MgO nanoparticles were dispersed in pure water at a concentration of 1 mg / mL, and then coated onto the FTO / NiO layer. x On the surface, a layer of approximately 0.2 nm thick FTO / NiO is formed. x The MgO structure is then subjected to air treatment at 150°C for 10 minutes.

[0055] Step 44: Prepare an interface layer on the nanoparticle layer: Dissolve 4PACz in chloroform or other solvents, and then prepare an interface layer on FTO / NiO by coating. x The MgO surface is 10 nm thick, forming an FTO / NiO layer. x The structure is / MgO / 4PACz, and then it is treated in air at 100°C for 10 minutes.

[0056] Step 45: Prepare a perovskite absorber layer on the interface layer; dissolve a certain proportion of CsI, FAI, MAI, PbI2, and PbBr2 in a mixed solvent of DMSO and DMF to prepare a precursor solution for the perovskite absorber layer. Then, coat the precursor solution onto FTO / NiO using a coating method. x The perovskite wet film sample was then heat-treated at 150°C for 10 min on a heating stage to obtain Cs. 0.05 (FA 0.83 MA 0.17 ) 0.95 Pb(I 0.83 Br 0.173 floors.

[0057] Step 46: Deposit an electron transport layer of fullerene derivative [6,6]-phenyl-C61-butyrate methyl ester (PCBM) onto the perovskite absorber layer using a thermal evaporation method. A thermal evaporation coating machine is used at a temperature of ~1.0 × 10⁻⁶. -4 Under a vacuum of Pa, 200 nm of silver is thermally evaporated onto the electron transport layer to form a metallic silver back electrode layer, thus completing the fabrication of a perovskite solar cell.

[0058] Comparative Example

[0059] An embodiment of the present invention that does not employ nanoparticle modification, taking the method for preparing perovskite solar cells as an example, includes the following steps:

[0060] Step D1: Use FTO as the substrate and ultrasonically clean it with cleaning agent, deionized water, acetone and isopropanol. After drying with nitrogen, treat it with a UV ozone cleaner for 20 minutes.

[0061] Step D2, using NiO x As a hole transport layer: First, NiO... x NiO was obtained by dispersing particles in deionized water at a concentration of 20 mg / mL and then sonicating in an ultrasonic bath for 24 hours. x Particle dispersion. Then, NiO is coated using a coating method. x Nanoparticle solution was coated onto FTO glass, and then annealed in air at 120°C for 30 min to obtain NiO. x Hole transport layer.

[0062] Step D3: Preparation of the interface layer on the nanoparticle layer: Dissolve 4PACz in chloroform or other solvents, and then prepare it on FTO / NiO by coating. x The surface, with a thickness of 10 nm, forms FTO / NiO. x The / 4PACz structure is then subjected to air treatment at 100°C for 10 minutes.

[0063] Step D4: Prepare a perovskite absorber layer on the interface layer; dissolve a certain proportion of CsI, FAI, MAI, PbI2, and PbBr2 in a mixed solvent of DMSO and DMF to prepare a precursor solution for the perovskite absorber layer. Then, coat the precursor solution onto FTO / NiO using a coating method. x / 4PACz layer. Subsequently, the perovskite wet film sample was heat-treated at 150℃ for 10 min on a heating stage to obtain Cs. 0.05 (FA 0.83 MA 0.17 ) 0.95 Pb(I 0.83 Br0.17 3 floors.

[0064] Step D5: An electron transport layer of fullerene derivative [6,6]-phenyl-C61-butyrate methyl ester (PCBM) is deposited on the perovskite absorber layer using a thermal evaporation method. A thermal evaporation coating machine is used at a temperature of ~1.0 × 10⁻⁶. -4 Under a vacuum of Pa, 200 nm of silver is thermally evaporated onto the electron transport layer to form a metallic silver back electrode layer, thus completing the fabrication of a perovskite solar cell.

[0065] The perovskite solar cells prepared in Examples 1-4 and the comparative examples were subjected to performance tests, and the test results are shown in Table 1.

[0066] Table 1. Performance test results of perovskite solar cells prepared in Examples 1-4 and comparative examples.

[0067] Table 1 shows the effect of different oxide nanoparticle layers on the performance of perovskite solar cells. The addition of thin oxide nanoparticle layers does not affect the efficiency of perovskite solar cells. This is mainly because the nanoparticle layer is very thin and does not affect the contact between the perovskite absorber layer and the SAM interface layer, thus not affecting the efficiency of perovskite solar cells.

[0068] The perovskite solar cells prepared in Examples 1-4 and the comparative example were subjected to an aging test of 1000 hours (h) at an aging environment of 85°C and 85% humidity, and the aging degradation curves are shown in Figure 1. The perovskite solar cells prepared in Examples 1-4 and the comparative example were aged under ultraviolet light for 100 kilowatt-hours (kWh), and the test result curves are shown in Figure 2. From Figures 1 and 2, it can be seen that the efficiency degradation rate of the perovskite solar cell containing the nanoparticle layer is significantly reduced, indicating that the presence of the nanoparticle layer significantly improves the stability of the perovskite solar cell, achieving the expected goal, with Al2O3 showing the best effect.

[0069] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A method for improving the stability of a perovskite solar cell, the internal structure of the perovskite solar cell comprising, from bottom to top, a substrate, a conductive layer, a hole transport layer, a perovskite absorber layer, an electron transport layer, and a back electrode layer, characterized in that, An interface layer is further arranged between the hole transport layer and the perovskite layer, and a nanoparticle layer is further arranged between the hole transport layer and the interface layer, The method comprises the following steps: first preparing the nanoparticle layer on the hole transport layer, and then preparing the interface layer on the nanoparticle layer; The preparation material of the hole transport layer is NiO x The preparation material of the nanoparticle layer is any one of Al2O3, SnO2, SiO2, and MgO nanoparticles.

2. The method for improving the stability of perovskite solar cells according to claim 1, wherein, The nanoparticle layer is prepared by dissolving the nanoparticles in isopropyl alcohol, pure water or ethanol with a concentration of 1 mg / mL to obtain a nanoparticle solution, coating the nanoparticle solution on the surface of the prepared hole transport layer, and then performing annealing treatment at 100-250 DEG C in air for 10-20 minutes.

3. The method for improving the stability of perovskite solar cells according to claim 1, wherein, The interface layer is prepared by dissolving the interface layer preparation material in chloroform, and then coating the interface layer preparation material on the surface of the prepared nanoparticle layer, and then performing annealing treatment at 80-100 DEG C in air for 10 minutes.

4. The method for improving the stability of perovskite solar cells according to claim 1, wherein, The interface layer preparation material is any one of [4-(9H-carbazole-9-yl)butyl] phosphonic acid, (3,6-dimethoxy-9H-carbazole-9-yl) trimethoxyphenylsilane, poly[4-(9H-carbazole-9-yl) butyl] phosphonic acid, and 4-(3,6-dimethyl-9H-carbazole-9-yl) butyl] phosphonic acid.

5. The method for improving the stability of perovskite solar cells according to claim 1, wherein, The thickness of the nanoparticle layer is 0.1-0.5 nm.

6. The method for improving the stability of perovskite solar cells according to claim 1, wherein, The thickness of the interface layer is 8-15 nm.

7. The method for improving the stability of perovskite solar cells according to claim 1, wherein, The preparation material of the conductive layer is transparent conductive oxide, including any one of indium tin oxide, aluminum-doped zinc oxide, fluorine-doped tin oxide, and antimony-doped tin oxide.

8. The method for improving the stability of perovskite solar cells according to claim 1, wherein, The preparation material of the perovskite absorption layer is Cs 0.05 (FA 0.83 MA 0.17 ) 0.95 Pb(I 0.83 Br 0.17 )3.

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