Solar cell and preparation method therefor, electrical device and power generation device

By introducing additives containing lone pairs of electrons into the light-absorbing layer of solar cells, the nucleation and growth rate of perovskite materials can be regulated, the grain size can be increased, and the crystal quality can be improved. This solves the problem of decreased crystal quality caused by the rapid nucleation and growth rate of perovskite materials, and improves the photoelectric conversion efficiency and stability of solar cells.

WO2026016504A1PCT designated stage Publication Date: 2026-01-22CONTEMPORARY AMPEREX TECHNOLOGY CO LTD
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Patent Information

Application Number
PCT/CN2025/081140
Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
Priority Date
2024-07-17
Filing Date
2025-03-06
Publication Date
2026-01-22

AI Technical Summary

Technical Problem

In existing solar cells, the rapid nucleation and growth rate of perovskite materials leads to a decrease in crystal quality, an increase in grain boundary and surface defects, and an impact on device performance.

Method used

Additives containing lone pairs of electrons, such as oxyacid groups and their derivatives, thiocyanate groups and their derivatives, amide groups and their derivatives, hydrazide groups and their derivatives, guanidine groups and their derivatives, are introduced into the light-absorbing layer to regulate the nucleation and growth rate of perovskite materials, increase grain size, and improve crystal quality.

Benefits of technology

By slowing down the nucleation and growth rate of perovskite materials, increasing grain size, and reducing grain boundaries and surface defects, the photoelectric conversion efficiency and stability of solar cells can be improved.

✦ Generated by Eureka AI based on patent content.

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Abstract

Disclosed in the present application are a solar cell and preparation method thereof, an electrical device, and a power generation device. The solar cell comprises a light-absorbing layer; the light-absorbing layer comprises a perovskite material and an additive; the additive comprises one or more functional groups; the functional groups include one or more of an oxoacid group and derivatives thereof, a thiocyanate group and derivatives thereof, an amide group and derivatives thereof, a hydrazide group and derivatives thereof, and a guanidine group and derivatives thereof; and the anions of the perovskite material include one or more of a fluoride anion, a chloride anion, a bromide anion, or an iodide anion. In the present application, the additive is introduced into the light-absorbing layer, and the force between the lone pairs of said additive and the perovskite material is used to delay the nucleation speed of the perovskite material, increase the size of the formed perovskite material grain, improve the crystallisation quality of the halide anionic perovskite material, reduce grain boundaries and / or surface defects of the perovskite material, and improve the solar cell device performance.
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Description

Solar cells and their fabrication methods, electrical equipment, power generation equipment

[0001] This disclosure claims priority to Chinese Patent Application No. 202410961371X, filed on July 17, 2024, entitled "Solar Cell and Method for Preparing the Same, Electrical Equipment, and Power Generation Equipment", the entirety of which is incorporated herein by reference. Technical Field

[0002] This invention relates to the field of new energy technology, and in particular to a solar cell and its preparation method, electrical equipment, and power generation equipment. Background Technology

[0003] This section provides only background information relevant to this application and is not necessarily prior art.

[0004] Solar cells have broad application prospects due to their high conversion efficiency and ease of fabrication. The hole transport layer is an important film structure in solar cells, and the composition of the hole transport material forming the hole transport layer has a significant impact on the overall performance of the solar cell. Summary of the Invention

[0005] In view of the technical problems existing in the background art, this application provides a solar cell and its preparation method, electrical equipment, and power generation equipment, aiming to improve the device performance of solar cells.

[0006] To achieve the above objectives, a first aspect of this application provides a solar cell comprising a first electrode layer, a light-absorbing layer, and a second electrode layer, wherein the light-absorbing layer is located between the first electrode layer and the second electrode layer, and the light-absorbing layer comprises a perovskite material and an additive, wherein the additive comprises one or more functional groups, and the functional groups comprise one or more of the following: oxyacid groups and their derivatives, thiocyanate groups and their derivatives, amide groups and their derivatives, hydrazide groups and their derivatives, guanidine groups and their derivatives, and the anions of the perovskite material comprise one or more of the following: fluoride anion, chloride anion, bromide anion, or iodide anion.

[0007] The embodiments of this application introduce an additive into the light-absorbing layer. This additive has an element containing lone pairs of electrons (such as one or more of oxygen, sulfur, nitrogen, and phosphorus). By utilizing the interaction between the lone pairs of electrons and the perovskite material, the nucleation and growth rate of the perovskite material is slowed down, the grain size of the formed perovskite material is increased, the crystal quality of the halide anion perovskite material is improved, the grain boundary and / or surface defects of the perovskite material are reduced, and the device performance of the solar cell is enhanced.

[0008] In some embodiments, the oxyacid group includes one or more of the following: carboxylic acid group, sulfonic acid group, and phosphonic acid group.

[0009] The additives provided in the embodiments of this application, which include oxyacid groups (including one or more of carboxylic acid groups, sulfonic acid groups, and phosphonic acid groups), have lone pairs of electrons. These lone pairs of electrons have a strong interaction with perovskite materials (e.g., A-site cations and / or B-site cations of perovskite materials). This interaction is beneficial for controlling the crystallization rate of perovskite materials, allowing for a slow growth process after rapid nucleation. The resulting perovskite material has a larger grain size than the perovskite material without additives, thus improving the crystallization quality of the perovskite. Furthermore, the larger grain size of the perovskite material also helps to reduce grain boundaries and / or surface defects, thereby improving the crystallization quality of the perovskite.

[0010] In some embodiments, the additive also includes one or more of substituted or unsubstituted hydrocarbon groups, substituted or unsubstituted aryl groups, and substituted or unsubstituted heteroaryl groups.

[0011] The embodiments of this application introduce the above-mentioned groups to make the additive have hydrophobic groups. The hydrophobic groups have low polarity and can easily spread on the outside of the perovskite material, thereby making the periphery of the perovskite material hydrophobic. Water and oxygen are not easy to enter the perovskite material, which is beneficial to improving the stability of the perovskite material.

[0012] In some embodiments, the substituted groups include one or more of the following: halogen, hydroxyl, and acyl groups.

[0013] The embodiments of this application regulate the performance of additives by introducing the aforementioned substituted groups, which is beneficial to improving the crystal quality of halide anion perovskite materials, reducing grain boundary and / or surface defects in perovskite materials, and improving the device performance of solar cells.

[0014] In some embodiments, the additive includes one or more of the following: formic acid and its derivatives, benzoic acid and its derivatives, trifluorobenzoic acid and its derivatives, 6-isoquinolinecarboxylic acid and its derivatives, acetic acid and its derivatives, trifluoroacetic acid and its derivatives, acrylic acid and its derivatives, sulfonic acid and its derivatives, benzenesulfonic acid and its derivatives, thiocyanate and its derivatives, phosphoric acid and its derivatives, phenethylamine and its derivatives, N-(2-aminoethyl)benzamide and its derivatives, 4-hydroxybenzamide and its derivatives, 5-hydroxyisophthalamide and its derivatives, phthaloylhydrazine and its derivatives, 2-aminobenzamide and its derivatives, 4-hydroxybenzoylhydrazine and its derivatives, carbamide and its derivatives, and guanidine and its derivatives.

[0015] The embodiments of this application use the additives provided above to slow down the nucleation and growth rate of perovskite materials, increase the grain size of the formed perovskite materials, improve the crystallization quality of halide anion perovskite materials, reduce grain boundaries and / or surface defects of perovskite materials, and improve the device performance of solar cells.

[0016] In some embodiments, the derivative comprises a salt, the cation of which includes one or more of methylammonium cation, cesium cation, formamidinium cation, guanidine cation, amide cation, and hydrazide cation.

[0017] The embodiments of this application improve the crystal quality of halide anion perovskite materials by using the derivatives provided above, reduce grain boundary and / or surface defects of perovskite materials, and improve the device performance of solar cells.

[0018] In some embodiments, the anions of the perovskite material include any one of fluoride anion, chloride anion, bromide anion, or iodide anion.

[0019] The embodiments of this application, through the single halide anion perovskite material provided above, can solve the problem of mixed halogen phase separation compared with mixed halide anion perovskite material, and have a more continuous and uniform band structure and more stable material properties, which is beneficial to improving the device performance of solar cells.

[0020] In some embodiments, the anions in the perovskite material include iodide anions.

[0021] The perovskite material with a single iodine anion provided in the embodiments of this application has a good synergistic effect with the additives, and the resulting perovskite material has good crystal quality, which is beneficial to improving the device performance of solar cells.

[0022] In some embodiments, the band gap of the perovskite material is in the range of 1.20 eV to 2.30 eV.

[0023] In the embodiments of this application, perovskite materials with band gaps within the above-mentioned range can effectively absorb the solar spectrum from visible light to near-infrared regions, allowing more solar energy to be converted into electrical energy, thus improving photoelectric conversion efficiency and making them suitable for solar cell applications.

[0024] In some embodiments, the thickness of the light-absorbing layer is in the range of 200 nm to 1000 nm.

[0025] In the embodiments of this application, the light-absorbing layer with a thickness within the above range can absorb most of the visible light to near-infrared photons in a very thin film layer because the perovskite material has a high light absorption coefficient. This design reduces the amount of perovskite material used, which helps to reduce costs and improve the performance of solar cells.

[0026] In some embodiments, the general chemical formula of the perovskite material is ABX3 or A2CDX6;

[0027] Among them, A includes one or more of cesium cations, formamidinium cations, methylamine cations, rubidium cations, and guanidine cations; B includes one or two of tin cations and lead cations; C includes silver cations; D includes one or more of bismuth cations, antimony cations, and indium cations; and X includes any one of fluoride anions, chloride anions, bromide anions, and iodide anions.

[0028] In the embodiments of this application, the perovskite material provided above has a relatively continuous and uniform band structure and relatively stable material properties, which is beneficial to improving the device performance of solar cells.

[0029] In some embodiments, the solar cell further includes a hole transport layer located between the first electrode layer or the second electrode layer and the light absorption layer.

[0030] In the embodiments of this application, the hole transport layer provided above can work synergistically with the light absorption layer provided in the embodiments of this application to improve the device performance of the solar cell.

[0031] In some embodiments, the hole transport layer includes a hole transport material, which includes one or more of nickel oxide, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], poly(3-hexylthiophene), poly3,4-ethylenedioxythiophene:polystyrene sulfonate, and 2,2',7,7'-tetratetra[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene.

[0032] The embodiments of this application improve the device performance of solar cells by synergistically combining the hole transport layer, which includes the hole transport material described above, with the light absorption layer provided in the embodiments of this application.

[0033] In some embodiments, the solar cell further includes an electron transport layer located between the second electrode layer or the first electrode layer and the light absorption layer.

[0034] In the embodiments of this application, the electron transport layer provided above can work synergistically with the light absorption layer provided in the embodiments of this application to improve the device performance of the solar cell.

[0035] In some embodiments, the electron transport layer includes an electron transport material, which includes one or more of tin oxide, titanium oxide, C60, and fullerene derivatives.

[0036] The embodiments of this application improve the device performance of solar cells by synergistically combining the electron transport layer, which includes the aforementioned electron transport material, with the light absorption layer provided in the embodiments of this application.

[0037] Secondly, embodiments of this application provide a method for preparing any of the solar cells provided in the first aspect, comprising:

[0038] A substrate structure is provided, the substrate structure including at least a first electrode layer;

[0039] A perovskite precursor solution is provided in the substrate structure. The perovskite precursor solution includes a perovskite precursor and an additive. The additive includes one or more functional groups, including one or more of the following: oxyacid groups and their derivatives, thiocyanate groups and their derivatives, amide groups and their derivatives, hydrazide groups and their derivatives, guanidine groups and their derivatives. The anions of the perovskite material include one or more of the following: fluoride anion, chloride anion, bromide anion or iodide anion. After nucleation and crystallization treatment, the perovskite precursor solution forms a light-absorbing layer.

[0040] A second electrode layer is fabricated on the light-absorbing layer.

[0041] In the embodiments of this application, the solar cell prepared by the above preparation method introduces an additive into the light absorption layer. The additive has an element containing lone pairs of electrons. By utilizing the interaction between the lone pairs of electrons and the perovskite material, the nucleation and growth rate of the perovskite material is slowed down, the grain size of the formed perovskite material is increased, the crystal quality of the halide anion perovskite material is improved, the grain boundary and / or surface defects of the perovskite material are reduced, and the device performance of the solar cell is improved.

[0042] In some embodiments, the perovskite precursor comprises a divalent metal cation, and the molar amount of the additive is 0.01% to 20% of the molar amount of the divalent metal cation.

[0043] In the embodiments of this application, the molar amount of the additive is within the above range, which is beneficial to regulate the nucleation and growth rate of the perovskite material, promote the grain growth of the perovskite material, improve the crystal quality of the perovskite material, reduce grain boundaries and / or surface defects of the perovskite material, improve carrier transport efficiency, and improve the device performance of the solar cell.

[0044] Thirdly, embodiments of this application provide an electrical device comprising a solar cell prepared by any of the solar cells provided in the first aspect or any of the solar cells provided in the second aspect. The electrical device employing the solar cell provided in this application possesses at least the same advantages as a solar cell, thereby improving the battery performance of the electrical device.

[0045] Fourthly, embodiments of this application provide a power generation device, including a solar cell prepared by any of the solar cells provided in the first aspect or any of the solar cells provided in the second aspect. The power generation device employing the solar cell provided in this application has at least the same advantages as a solar cell, improving the power consumption performance of the power generation device. Attached Figure Description

[0046] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. Other drawings can be obtained based on these drawings without creative effort.

[0047] Figure 1 is a schematic diagram of the first structure of a solar cell provided in an embodiment of this application;

[0048] Figure 2 is a schematic diagram of the second structure of a solar cell provided in an embodiment of this application;

[0049] Figure 3 is a schematic diagram of the third structure of the solar cell provided in an embodiment of this application;

[0050] Figure 4 is a schematic diagram of the fourth structure of the solar cell provided in an embodiment of this application;

[0051] Figure 5 is a fifth structural schematic diagram of the solar cell provided in an embodiment of this application;

[0052] Figure 6 is a schematic diagram of the structure of the electrical equipment provided in an embodiment of this application;

[0053] Figure 7 is a schematic diagram of the structure of the power generation equipment provided in an embodiment of this application;

[0054] Figure 8 is a microscopic morphology image of the light absorption layer prepared in Example 1;

[0055] Figure 9 is a microscopic image of the light-absorbing layer prepared in Comparative Example 1.

[0056] Explanation of reference numerals: 100-Solar cell, 10-Light absorption layer, 20-First electrode layer, 30-Second electrode layer, 40-Hole transport layer, 50-Electron transport layer, 60-Substrate, 1000-Electrical device, 2000-Power generation device. Detailed Implementation

[0057] The present application will be further described below with reference to specific embodiments. It should be understood that these specific embodiments are for illustrative purposes only and are not intended to limit the scope of the present application.

[0058] For the sake of brevity, this article only discloses some specific numerical ranges. However, any lower limit can be combined with any upper limit to form an unspecified range; and any lower limit can be combined with other lower limits to form an unspecified range, just as any upper limit can be combined with any other upper limit to form an unspecified range. Furthermore, each individually disclosed point or single value can itself serve as a lower or upper limit and be combined with any other point or single value or with other lower or upper limits to form an unspecified range.

[0059] In this description, unless otherwise stated, the term "or" is inclusive. That is, the phrase "A or (or) B" means "A, B, or both A and B". More specifically, the condition "A or B" is satisfied by any of the following conditions: A is true (or exists) and B is false (or does not exist); A is false (or does not exist) and B is true (or exists); or both A and B are true (or exist).

[0060] In the description of this article, it should be noted that, unless otherwise stated, "above" and "below" include the number itself, and "several" in "one or more" means two or more.

[0061] Unless otherwise stated, the terms used in this application have their common meanings as commonly understood by those skilled in the art. Unless otherwise stated, the values ​​of the parameters mentioned in this application can be measured using various measurement methods commonly used in the art (e.g., they can be tested according to the methods given in the embodiments of this application).

[0062] Perovskite materials are commonly used light-absorbing layer materials in solar cells, and their performance directly affects the device performance. Among them, perovskite materials containing halide anions have a wide bandgap, which is beneficial for matching the solar spectrum and improving photoelectric conversion efficiency. They also possess many advantages such as high defect state tolerance, long-range charge transport, and low-cost manufacturing processes, making perovskite solar cells containing halide anions widely concerned and possessing great application potential.

[0063] Perovskite materials have numerous nucleation sites, making them prone to explosive nucleation growth processes. This can lead to a decrease in the crystal quality of perovskite materials, affecting the performance of corresponding solar cells.

[0064] To improve the device performance of solar cells, embodiments of this application introduce additives into the light-absorbing layer. These additives contain elements with lone pairs of electrons (such as one or more of oxygen, sulfur, nitrogen, and phosphorus). By utilizing the interaction between lone pairs of electrons and the perovskite material, the nucleation and growth rate of the perovskite material is slowed down, the grain size of the formed perovskite material is increased, the crystal quality of halide anion perovskite material is improved, and grain boundary and / or surface defects of the perovskite material are reduced, thereby improving the device performance of the solar cell.

[0065] The technical solutions described in the embodiments of this application are applicable to solar cells and their fabrication methods, electrical devices, and power generation equipment. The solar cells disclosed in this application can be used in tandem solar cells containing perovskite, such as perovskite-perovskite tandem solar cells, silicon-perovskite tandem solar cells, perovskite-heterojunction tandem solar cells, etc., and this application does not impose any limitations.

[0066] Please refer to Figure 1, which is a schematic diagram of the first structure of a solar cell provided in an embodiment of this application.

[0067] To achieve the above objectives, referring to Figure 1, a first aspect of this application provides a solar cell 100. The solar cell 100 includes a first electrode layer 20, a light-absorbing layer 10, and a second electrode layer 30, with the light-absorbing layer 10 located between the first electrode layer 20 and the second electrode layer 30. The light-absorbing layer 10 includes a perovskite material and additives. The additives include one or more functional groups, including one or more of oxyacid groups and their derivatives, thiocyanate groups and their derivatives, amide groups and their derivatives, hydrazide groups and their derivatives, and guanidine groups and their derivatives. The anions in the perovskite material include one or more of fluoride anions, chloride anions, bromide anions, or iodide anions.

[0068] In this context, solar cell 100 refers to a device that directly converts light energy into electrical energy through the photovoltaic effect. The light-absorbing layer 10 is the core component of solar cell 100, used to absorb photon energy from sunlight, generating electron-hole pairs. Under the influence of a built-in electric field, these electron-hole pairs separate into free electrons and holes, which are then collected by the first electrode layer 20 and the second electrode layer 30, respectively. The first electrode layer 20 and the second electrode layer 30 are connected to form a circuit to generate photocurrent. Perovskite material refers to a material with the same crystal structure as CaTiO3, exhibiting a cubic crystal phase in a stable state, and is used as the main forming material of the light-absorbing layer 10.

[0069] Additives affect the crystallization process of perovskite materials, improve the crystallization quality of perovskite materials, reduce grain boundaries and / or surface defects of perovskite materials, and enhance the device performance of solar cells 100.

[0070] Oxyacid groups are acidic functional groups whose chemical structure consists of one or more oxygen atoms, one or more hydrogen atoms, and at least one non-hydrogen atom (usually a non-metallic element). These groups release hydrogen ions (H+) in water or polar solvents, exhibiting acidic properties. Derivatives of oxyacid groups are new compounds containing the oxyacid group or a portion of its structure, formed through chemical reactions. While derivatives retain the basic structural features of the oxyacid group, their overall chemical properties may differ due to structural variations.

[0071] The chemical formula of the thiocyanate group is -SC≡N. Derivatives of the thiocyanate group refer to new compounds containing the thiocyanate group or a portion thereof, generated through a chemical reaction. These derivatives retain the basic structural features of the thiocyanate group, but their overall chemical properties may differ due to structural variations.

[0072] An amide group is a structural unit consisting of an acyl group (R-CO-, where R represents an organic group) and an amino group (-NH2) linked by a single bond. Amide derivatives are new compounds containing the amide group or a portion thereof, generated through chemical reactions. While amide derivatives retain the basic structural features of the amide group, their overall chemical properties may differ due to structural variations.

[0073] The chemical formula of the hydrazide group is Derivatives of the acylhydrazine group refer to new compounds containing the acylhydrazine group or a part of its structure, generated by chemical reactions of the acylhydrazine group. Derivatives of the acylhydrazine group retain the basic structural features of the acylhydrazine group, but their overall chemical properties may differ due to structural changes.

[0074] The chemical formula of guanidinyl is Guanidinium derivatives are new compounds containing guanidinium or a portion thereof, generated by chemical reactions from guanidinium. Guanidinium derivatives retain the basic structural features of guanidinium, but their overall chemical properties may differ due to structural changes.

[0075] The aforementioned functional groups all contain elements with lone pairs of electrons. The electron cloud density of lone pairs of electrons is relatively high, and they are in an electron-rich state. They can form a certain interaction force with the cations of the perovskite material, which are in an electron-deficient state. This allows the additive to affect the nucleation and growth rate of the perovskite material. Specifically, it slows down the nucleation and growth rate of the perovskite material, increases the grain size of the formed perovskite material, improves the crystal quality of the perovskite material, reduces grain boundaries and / or surface defects of the perovskite material, and improves the device performance of the solar cell 100.

[0076] The anions in perovskite materials include one or more of the following: fluoride anion, chloride anion, bromide anion, or iodide anion.

[0077] In embodiments of this application, an additive is introduced into the light-absorbing layer 10. This additive contains an element that includes lone pairs of electrons (e.g., one or more of oxygen, sulfur, nitrogen, and phosphorus). By utilizing the interaction between the lone pairs of electrons and the perovskite material, the nucleation and growth rate of the perovskite material is slowed down, the grain size of the formed perovskite material is increased, the crystal quality of the halide anion perovskite material is improved, the grain boundaries and / or surface defects of the perovskite material are reduced, and the device performance of the solar cell 100 is enhanced.

[0078] In some embodiments, the oxyacid group includes one or more of the following: carboxylic acid group, sulfonic acid group, and phosphonic acid group.

[0079] The chemical formula of the carboxylic acid group is -COOH. The chemical formula of the sulfonic acid group is -SO3H. The chemical formula of the phosphonic acid group is -PO3H2.

[0080] The additives provided in the embodiments of this application, which include oxyacid groups (including one or more of carboxylic acid groups, sulfonic acid groups, and phosphonic acid groups), have lone pairs of electrons. These lone pairs of electrons have a strong interaction with perovskite materials (e.g., A-site cations and / or B-site cations of perovskite materials). This interaction is beneficial for controlling the crystallization rate of perovskite materials, allowing for a slow growth process after rapid nucleation. The resulting perovskite material has a larger grain size than the perovskite material without additives, thus improving the crystallization quality of the perovskite. Furthermore, the larger grain size of the perovskite material also helps to reduce grain boundaries and / or surface defects, thereby improving the crystallization quality of the perovskite.

[0081] In some embodiments, the additive also includes one or more of substituted or unsubstituted hydrocarbon groups, substituted or unsubstituted aryl groups, and substituted or unsubstituted heteroaryl groups.

[0082] Here, a hydrocarbon group refers to the group remaining after a hydrocarbon loses a hydrogen atom. In some embodiments, the hydrocarbon group includes one or more of alkyl, alkenyl, and alkynyl groups. An aryl group refers to a group formed by removing a hydrogen atom from an unsaturated carbocyclic compound with special stability; the atoms constituting the ring system are carbon atoms. A heteroaryl group refers to a group formed when some carbon elements in the aryl ring structure are replaced by non-carbon elements.

[0083] The embodiments of this application introduce the above-mentioned groups to make the additive have hydrophobic groups. The hydrophobic groups have low polarity and can easily spread on the outside of the perovskite material, thereby making the periphery of the perovskite material hydrophobic. Water and oxygen are not easy to enter the perovskite material, which is beneficial to improving the stability of the perovskite material.

[0084] In some embodiments, the substituted groups include one or more of the following: halogen, hydroxyl, and acyl groups.

[0085] The embodiments of this application regulate the performance of additives by introducing the above-mentioned substituted groups, which is beneficial to improving the crystal quality of halide anion perovskite materials, reducing grain boundary and / or surface defects of perovskite materials, and improving the device performance of solar cell 100.

[0086] In some embodiments, the additive includes one or more of the following: formic acid and its derivatives, benzoic acid and its derivatives, trifluorobenzoic acid and its derivatives, 6-isoquinolinecarboxylic acid and its derivatives, acetic acid and its derivatives, trifluoroacetic acid and its derivatives, acrylic acid and its derivatives, sulfonic acid and its derivatives, benzenesulfonic acid and its derivatives, thiocyanate and its derivatives, phosphoric acid and its derivatives, phenethylamine and its derivatives, N-(2-aminoethyl)benzamide and its derivatives, 4-hydroxybenzamide and its derivatives, 5-hydroxyisophthalamide and its derivatives, phthaloylhydrazine and its derivatives, 2-aminobenzamide and its derivatives, 4-hydroxybenzoylhydrazine and its derivatives, carbamide and its derivatives, and guanidine and its derivatives.

[0087] Formic acid has the chemical formula HCOOH. Benzoic acid has the chemical formula... The chemical formula of trifluorobenzoic acid is The chemical formula of 6-isoquinoline carboxylic acid is The chemical formula for acetic acid is CH3COOH. The chemical formula for trifluoroacetic acid is... The chemical formula of acrylic acid is The chemical formula of sulfonic acid is RSO3H, where R represents an aryl group. The chemical formula of benzenesulfonic acid is... The chemical formula for thiocyanate is HS-C≡N. The chemical formula for phosphoric acid is... In some embodiments, derivatives of the above-mentioned additives include one or more of the following: cesium salts, ammonium salts (for example, one or two of methylammonium salts and ethylammonium salts), guanidine salts / compounds, phenethylamine salts / compounds, amide salts / compounds, acylhydrazine salts / compounds, and formamidinium salts / compounds.

[0088] The chemical formula of phenylethylamine is The chemical formula of N-(2-aminoethyl)benzamide is The chemical formula of 4-hydroxybenzamide is The chemical formula of 5-hydroxy-reiodine is The chemical formula of phthalohydrazide is The chemical formula of 2-aminobenzamide is The chemical formula of 4-hydroxybenzoylhydrazine is The chemical formula of carbamide is The chemical formula of guanidine is In some embodiments, derivatives of the above-mentioned additives include one or more of the following: carboxylates / compounds, acrylates / compounds, benzoates / compounds, sulfonates / compounds, phosphates / compounds, and hypophosphites / compounds.

[0089] The embodiments of this application use the additives provided above to slow down the nucleation and growth rate of perovskite materials, increase the grain size of the formed perovskite materials, improve the crystallization quality of halide anion perovskite materials, reduce grain boundaries and / or surface defects of perovskite materials, and improve the device performance of solar cell 100.

[0090] In some embodiments, the derivative comprises a salt, the cation of which includes one or more of methylammonium cation, cesium cation, formamidinium cation, guanidine cation, amide cation, and hydrazide cation.

[0091] The embodiments of this application improve the crystal quality of halide anion perovskite materials by using the derivatives provided above, reduce grain boundaries and / or surface defects of perovskite materials, and improve the device performance of solar cell 100.

[0092] In some embodiments, the anions of the perovskite material include any one of fluoride anion, chloride anion, bromide anion, or iodide anion.

[0093] The embodiments of this application, through the perovskite material with a single halide anion provided above, can solve the problem of mixed halogen phase separation compared with perovskite material with mixed halide anions, and have a more continuous and uniform band structure and more stable material properties, which is beneficial to improving the device performance of solar cell 100.

[0094] In some embodiments, the anions in the perovskite material include iodide anions.

[0095] The perovskite material with a single iodine anion provided in the embodiments of this application has a good synergistic effect with the additives, and the resulting perovskite material has good crystal quality, which is beneficial to improving the device performance of the solar cell 100.

[0096] In some embodiments, the band gap of the perovskite material is in the range of 1.20 eV to 2.30 eV. The band gap of the perovskite material can be 1.20 eV, 1.25 eV, 1.30 eV, 1.35 eV, 1.40 eV, 1.45 eV, 1.50 eV, 1.55 eV, 1.60 eV, 1.65 eV, 1.70 eV, 1.75 eV, 1.80 eV, 1.85 eV, 1.90 eV, 1.95 eV, 2.00 eV, 2.05 eV, 2.10 eV, 2.15 eV, 2.20 eV, 2.25 eV, 2.3 eV. 0 eV, or a range consisting of any two of the above values, such as 1.20 eV to 1.40 eV, 1.30 eV to 1.50 eV, 1.40 eV to 1.60 eV, 1.50 eV to 1.70 eV, 1.60 eV to 1.80 eV, 1.70 eV to 1.90 eV, 1.80 eV to 2.00 eV, 1.90 eV to 2.10 eV, 2.00 eV to 2.20 eV, 2.10 eV to 2.30 eV, etc.

[0097] In the embodiments of this application, perovskite materials with band gaps within the above-mentioned range can effectively absorb the solar spectrum from visible light to near-infrared regions, allowing more solar energy to be converted into electrical energy, thus improving photoelectric conversion efficiency and making them suitable for applications of solar cells 100.

[0098] In some embodiments, the thickness of the light-absorbing layer 10 is in the range of 200 nm to 1000 nm. The thickness of the light-absorbing layer 10 can be 200 nm, 210 nm, 220 nm, 230 nm, 240 nm, 250 nm, 260 nm, 270 nm, 280 nm, 290 nm, 300 nm, 310 nm, 320 nm, 330 nm, 340 nm, 350 nm, 360 nm, 370 nm, 380 nm, 390 nm, 400 nm, 410 nm, 420 nm, 430 nm, etc. 0nm, 440nm, 450nm, 460nm, 470nm, 480nm, 490nm, 500nm, 510nm, 520nm, 530nm, 540nm, 550nm, 560nm, 570nm, 580nm, 590nm, 600nm, 610nm, 620nm, 630nm, 640nm, 650nm, 660nm, 670nm, 680n m, 690nm, 700nm, 710nm, 720nm, 730nm, 740nm, 750nm, 760nm, 770nm, 780nm, 790nm, 800nm, 81 0nm, 820nm, 830nm, 840nm, 850nm, 860nm, 870nm, 880nm, 890nm, 900nm, 910nm, 920nm, 930nm, 940nm, 950nm, 960nm, 970nm, 980nm, 990nm, 1000nm, etc., or any range of two of the above values, for example, 200nm~400nm, 300nm~500nm, 400nm~600nm, 500nm~700nm, 600nm~800nm, 700nm~900nm, 800nm~1000nm, etc.

[0099] In the embodiments of this application, the light-absorbing layer 10 with a thickness within the above range can absorb most of the visible light to near-infrared photons in a very thin film layer because the perovskite material has a high light absorption coefficient. This design reduces the amount of perovskite material used, which helps to reduce costs and improve the performance of the solar cell 100.

[0100] In some embodiments, the general chemical formula of the perovskite material is ABX3 or A2CDX6;

[0101] Among them, A includes one or more of cesium cations, formamidinium cations, methylamine cations, rubidium cations, and guanidine cations; B includes one or two of tin cations and lead cations; C includes silver cations; D includes one or more of bismuth cations, antimony cations, and indium cations; and X includes any one of fluoride anions, chloride anions, bromide anions, and iodide anions.

[0102] In the embodiments of this application, the perovskite material provided above has a relatively continuous and uniform band structure and relatively stable material properties, which is beneficial to improving the device performance of the solar cell 100.

[0103] Please refer to Figure 2, which is a schematic diagram of the second structure of a solar cell provided in an embodiment of this application.

[0104] In some embodiments, referring to FIG2, the solar cell 100 further includes a hole transport layer 40, which is located between the first electrode layer 20 or the second electrode layer 30 and the light absorption layer 10.

[0105] The hole transport layer 40 is a functional layer that extracts and transports photogenerated holes generated by the light absorption layer 10. In some embodiments, the hole transport layer 40 can be directly disposed on one side surface of the light absorption layer 10. In some embodiments, the hole transport layer 40 can also be disposed at a distance from the light absorption layer 10 through a passivation layer. The hole transport material is used to extract and transport photogenerated holes.

[0106] In the embodiments of this application, the hole transport layer 40 provided above can work synergistically with the light absorption layer 10 provided in the embodiments of this application to improve the device performance of the solar cell 100.

[0107] In some embodiments, the hole transport layer 40 includes a hole transport material, which includes one or more of nickel oxide, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], poly(3-hexylthiophene), poly3,4-ethylenedioxythiophene:polystyrene sulfonate, and 2,2',7,7'-tetratetra[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene.

[0108] The embodiments of this application improve the device performance of the solar cell 100 by synergistically combining the hole transport layer 40, which includes the hole transport material described above, with the light absorption layer 10 provided in the embodiments of this application.

[0109] Please refer to Figures 3 to 5. Figure 3 is a schematic diagram of the third structure of the solar cell provided in the embodiment of this application, Figure 4 is a schematic diagram of the fourth structure of the solar cell provided in the embodiment of this application, and Figure 5 is a schematic diagram of the fifth structure of the solar cell provided in the embodiment of this application.

[0110] In some embodiments, referring to FIG3, the solar cell 100 further includes an electron transport layer 50, which is located between the second electrode layer 30 or the first electrode layer 20 and the light absorption layer 10.

[0111] In this embodiment, the electron transport layer 50 refers to the functional layer that extracts and transports photogenerated electrons generated by the light absorption layer 10. In some embodiments, the electron transport layer 50 can be directly disposed on one side surface of the light absorption layer 10. In some embodiments, the electron transport layer 50 can also be disposed at a distance from the light absorption layer 10 through a passivation layer. The electron transport material is used to extract and transport photogenerated electrons. In some embodiments, the solar cell 100 includes a hole transport layer 40 and an electron transport layer 50, with the hole transport layer 40 disposed on one side of the light absorption layer 10 and the electron transport layer 50 disposed on the other side of the light absorption layer 10 away from the hole transport layer 40.

[0112] In the embodiments of this application, the electron transport layer 50 provided above can work synergistically with the light absorption layer 10 provided in the embodiments of this application to improve the device performance of the solar cell 100.

[0113] In some embodiments, the electron transport layer includes an electron transport material, which includes one or more of tin oxide, titanium oxide, C60, and fullerene derivatives.

[0114] The embodiments of this application improve the device performance of the solar cell 100 by synergistically combining the electron transport layer 50, which includes the electron transport material described above, with the light absorption layer 10 provided in the embodiments of this application.

[0115] In some embodiments, referring to FIG4, an inverted solar cell 100 is provided, the solar cell 100 including a substrate 60, a first electrode layer 20, a hole transport layer 40, a light absorption layer 10, an electron transport layer 50, and a second electrode layer 30.

[0116] In some embodiments, referring to FIG5, a formal solar cell 100 is provided, which includes a substrate 60, a first electrode layer 20, an electron transport layer 50, a light absorption layer 10, a hole transport layer 40, and a second electrode layer 30.

[0117] Secondly, embodiments of this application provide a method for fabricating any of the solar cells 100 provided in the first aspect, comprising:

[0118] S1, a substrate structure is provided, the substrate structure including at least a first electrode layer 20.

[0119] The substrate structure refers to the intermediate structure including the first electrode layer 20.

[0120] In some embodiments, in addition to the first electrode layer 20, the substrate structure further includes a substrate 60, which is disposed on one side of the first electrode layer 20. In some embodiments, the substrate 60 is a rigid material; in some other embodiments, the substrate 60 is a flexible material, as required. In some embodiments, the substrate 60 is a light-transmitting material, used to allow light to reach the light-absorbing layer 10. In some embodiments, the light-absorbing layer 10 is disposed on the side of the first electrode layer 20 away from the substrate 60.

[0121] In some embodiments, in addition to the stacked substrate 60 and the first electrode layer 20, the substrate structure may further include a first carrier transport layer disposed on the side of the first electrode layer 20 away from the substrate 60. In some embodiments, the first carrier transport layer may be one of a hole transport layer 40 and an electron transport layer 50. In some embodiments, the light absorption layer 10 may be disposed on the side of the first carrier transport layer away from the substrate 60.

[0122] In some embodiments, in addition to the substrate 60, the first electrode layer 20, and the first carrier transport layer stacked sequentially, the substrate structure may further include a first passivation layer disposed on the side of the first carrier transport layer away from the substrate 60. In some embodiments, the light absorption layer 10 may be disposed on the side of the first passivation layer away from the substrate 60.

[0123] In some embodiments, the first electrode layer 20 may be a light-transmitting material. In some embodiments, the first electrode layer 20 may be made of at least one of the following materials: fluorine-doped tin dioxide, indium tin oxide, aluminum-doped zinc oxide, boron-doped zinc oxide, and zinc-doped indium oxide.

[0124] S2, a perovskite precursor solution is provided on the substrate structure. The perovskite precursor solution includes a perovskite precursor and an additive. The additive includes one or more functional groups, including one or more of the following: oxyacid groups and their derivatives, thiocyanate groups and their derivatives, amide groups and their derivatives, hydrazide groups and their derivatives, guanidine groups and their derivatives. The anions of the perovskite material include one or more of the following: fluoride anion, chloride anion, bromide anion or iodide anion. After nucleation and crystallization treatment, the perovskite precursor solution forms a light-absorbing layer 10.

[0125] In this context, the perovskite precursor refers to the precursor component that forms the perovskite material. The perovskite precursor solution refers to the product formed by dispersing the precursor component that forms the light-absorbing layer 10 in a solvent. Nucleation and crystallization treatment refers to a means of attaching the perovskite precursor solution to the surface of a substrate structure in a certain manner, and causing the perovskite precursor to nucleate and grow to form the crystal structure of the perovskite material. For example, the nucleation and crystallization treatment is a process of forming the perovskite precursor solution on a substrate structure by spin coating, spraying, or blade coating, and then heat-treating the formed pre-product to form the light-absorbing layer 10. The treatment temperature and treatment time of the heat treatment are selected with the goal of forming the light-absorbing layer 10. In some embodiments, the heat treatment may be a hot sintering treatment and / or an annealing treatment.

[0126] S3, a second electrode layer 30 is prepared on the light absorption layer 10.

[0127] In some embodiments, in addition to the second electrode layer 30, a second carrier transport layer may also be formed on the light absorption layer 10. In some embodiments, the second carrier transport layer may be another of the hole transport layer 40 and the electron transport layer 50. In some embodiments, the second carrier transport layer may be disposed on the side of the light absorption layer 10 away from the substrate structure, and the second electrode layer 30 may be disposed on the side of the second carrier transport layer away from the substrate structure.

[0128] In some embodiments, in addition to the stacked second carrier transport layer and second electrode layer 30, a second passivation layer may also be formed on the light absorption layer 10. In some embodiments, the second passivation layer may be disposed on the side of the light absorption layer 10 away from the substrate structure, the second carrier transport layer may be disposed on the side of the second passivation layer away from the substrate structure, and the second electrode layer 30 may be disposed on the side of the second carrier transport layer away from the substrate structure.

[0129] In some embodiments, the second electrode layer 30 may include at least one of the following materials: silver (Ag), copper (Cu), carbon (C), gold (Au), aluminum (Al), indium tin oxide, aluminum-doped zinc oxide, boron-doped zinc oxide, and zinc-doped indium oxide.

[0130] In the embodiments of this application, the solar cell 100 prepared by the above preparation method introduces an additive into the light absorption layer 10. The additive has an element containing lone pairs of electrons. By utilizing the interaction between the lone pairs of electrons and the perovskite material, the nucleation and growth rate of the perovskite material is slowed down, the grain size of the formed perovskite material is increased, the crystal quality of the halide anion perovskite material is improved, the grain boundary and / or surface defects of the perovskite material are reduced, and the device performance of the solar cell 100 is improved.

[0131] In some embodiments, the perovskite precursor comprises a divalent metal cation, and the molar amount of the additive is 0.01% to 20% of the molar amount of the divalent metal cation. The molar amount of the additive can be 0.01%, 0.02%, 0.05%, 0.1%, 0.2%, 0.5%, 1%, 2%, 3%, 4%, 5%, 6%, 7%, 8%, 9%, 10%, 11%, 12%, 13%, 14%, 15%, 16%, 17%, 18%, 19%, 20% of the molar amount of the divalent metal cation, or a range of any two of the above values, for example, 0.01% to 3%, 1% to 5%, 3% to 10%, 8% to 12%, 10% to 15%, 12% to 18%, 15% to 20%, etc.

[0132] In the embodiments of this application, the molar amount of the additive is within the above range, which is beneficial to regulate the nucleation and growth rate of the perovskite material, promote the grain growth of the perovskite material, improve the crystal quality of the perovskite material, reduce grain boundaries and / or surface defects of the perovskite material, improve the carrier transport efficiency, and improve the device performance of the solar cell 100.

[0133] Please refer to Figure 6, which is a schematic diagram of the structure of the electrical equipment provided in the embodiment of this application.

[0134] Thirdly, referring to Figure 6, an embodiment of this application provides an electrical device 1000, including a solar cell 100 prepared by any of the solar cells 100 provided in the first aspect or any of the solar cells 100 provided in the second aspect. The electrical device 1000 employs the solar cell 100 provided in this application and has at least the same advantages as the solar cell 100, thereby improving the battery performance of the electrical device 1000.

[0135] In the embodiments of this application, the solar cell 100 serves as the power source for the electrical device 1000, enabling the normal operation of the electrical device 1000. The electrical device 1000 employs the solar cell 100 provided in this application and possesses at least the same advantages as the solar cell 100, improving the battery performance of the electrical device 1000. As an example, the electrical device 1000 may include lighting devices, display devices, or new energy vehicles, etc.

[0136] Please refer to Figure 7, which is a schematic diagram of the structure of the power generation equipment provided in the embodiment of this application.

[0137] Fourthly, referring to Figure 7, an embodiment of this application provides a power generation device 2000, including a solar cell 100 prepared by any of the solar cells 100 provided in the first aspect or any of the solar cells 100 provided in the second aspect. The power generation device 2000 uses the solar cell 100 provided in this application and has at least the same advantages as the solar cell 100, which can improve the power consumption performance of the power generation device 2000.

[0138] In the embodiments of this application, the solar cell 100 serves as the energy source for the power generation device 2000, enabling the power generation device 2000 to output electrical energy. The power generation device 2000 utilizes the solar cell 100 provided in this application and possesses at least the same advantages as the solar cell 100, thereby improving the power generation performance of the power generation device 2000. As an example, the power generation device 2000 can be applied to fields such as building power supply, wearable device power supply, smartphone power supply, and vehicle battery power supply.

[0139] The beneficial effects of this application are further illustrated below with reference to the embodiments.

[0140] To make the technical problems, technical solutions, and beneficial effects solved by the embodiments of this application clearer, the following will provide a more detailed description in conjunction with the embodiments and accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. The following description of at least one exemplary embodiment is merely illustrative and is in no way intended to limit this application or its applications. All other embodiments obtained based on the embodiments of this application without inventive effort are within the scope of protection of this application.

[0141] Example 1

[0142] Fabrication of solar cell 100:

[0143] (1) Take an FTO (fluorine-doped tin dioxide) conductive glass with a specification of 2.0cm*2.0cm, and remove 0.35cm of fluorine-doped tin dioxide from both ends by laser etching to expose the glass substrate.

[0144] (2) Use water, acetone and isopropanol to ultrasonically clean the etched FTO conductive glass twice each; blow the solvent off the surface of the FTO conductive glass under a nitrogen gun and put it into an ultraviolet ozone generator for ultraviolet ozone treatment.

[0145] (3) A precursor solution containing nickel oxide nanoparticles with a concentration of 10 mg / mL (solvent is water) was spin-coated onto the FTO conductive glass after UV ozone treatment at a speed of 4000 rpm. The solution was then annealed on a hot stage at 100°C for 30 min and cooled to room temperature to form a hole transport layer 40 with a thickness of 20 nm.

[0146] (4) Lead iodide, formamidine iodide, cesium iodide, and methylamine iodide were weighed and dissolved in a solvent formed by mixing DMF (N,N-dimethylformamide) and DMSO (dimethyl sulfoxide) in a volume ratio of 4:1 at a molar ratio of 1:0.7885:0.05:0.1615 to prepare a precursor solution with a concentration of 1.3 mol / L. Then, an additive (methylammonium thiocyanate) of 1% of the molar amount of lead iodide was added to the precursor solution, and the mixture was stirred for 3 hours. The mixture was then filtered through a 0.22 μm organic filter membrane to obtain a perovskite precursor solution. This perovskite precursor solution was spin-coated onto the hole transport layer 40 at a speed of 3000 rpm, and then annealed on a hot plate at 100 °C for 30 minutes. After cooling to room temperature, a light-absorbing layer 10 with a thickness of 550 nm was obtained. The chemical formula of the perovskite material of the light-absorbing layer 10 is Cs. 0.05 (FA 0.83 MA 0.17 ) 0.95 PbI3.

[0147] (5) On the light-absorbing layer 10, a chlorobenzene solution of PCBM (fullerene derivative) with a concentration of 20 mg / mL is spin-coated at a speed of 1500 rpm, and annealed at 100 °C for 10 min to obtain a preliminary product with a thickness of 30 nm. After cooling to room temperature, a solution of BCP (bath copper, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline) with a concentration of 0.5 mg / mL isopropanol is spin-coated at a speed of 5000 rpm to form an insertion layer with a thickness of 5 nm, thereby obtaining an electron transport layer 50.

[0148] (6) Clean the edges, select a suitable mask, put the obtained intermediate product into the vapor deposition machine, vapor deposit metal Au (gold) at a rate of 1A / s, and obtain a second electrode layer 30 with a thickness of 80nm. The obtained solar cell 100 is marked as cell 1.

[0149] Examples 2 to 9 are similar to Example 1, except that the amount of additive added in step (4) of Examples 2 to 9 is different from that in Example 1. The solar cells 100 obtained in Examples 2 to 9 are labeled as cells 2 to 9, respectively.

[0150] Example 10 is similar to Example 1, except that the perovskite precursor solution used in step (4) of Example 10 is different from that in Example 1. Specifically, lead iodide, formamidine iodide, and methylamine iodide are weighed and dissolved in a molar ratio of 1:0.83:0.17 in a solvent formed by mixing DMF (N,N-dimethylformamide) and DMSO (dimethyl sulfoxide) in a volume ratio of 4:1 to prepare a precursor solution with a concentration of 1.3 mol / L. The chemical formula of the perovskite material of the light-absorbing layer 10 is FA. 0.83 MA0.17 PbI3. The solar cell 100 obtained in Example 10 is labeled as cell 10.

[0151] Example 11 is similar to Example 1, except that the perovskite precursor solution used in step (4) of Example 11 is different from that in Example 1. Specifically, lead bromide and cesium bromide are weighed and dissolved in a 1:1 molar ratio in a solvent formed by mixing DMF (N,N-dimethylformamide) and DMSO (dimethyl sulfoxide) in a 4:1 volume ratio to prepare a precursor solution with a concentration of 1.3 mol / L. The chemical formula of the perovskite material of the light-absorbing layer 10 is CsPbBr3. The solar cell 100 obtained in Example 11 is labeled as cell 11.

[0152] Example 12 is similar to Example 1, except that the perovskite precursor solution used in step (4) of Example 12 is different from that in Example 1. Specifically, the preparation process of the precursor solution in this example is as follows: lead iodide, formamidine iodide, formamidine bromodimethylamine and methyl bromide are weighed and dissolved in a solvent formed by mixing DMF (N,N-dimethylformamide) and DMSO (dimethyl sulfoxide) in a volume ratio of 4:1 at a molar ratio of 1:0.49:0.34:0.17 to prepare a precursor solution with a concentration of 1.3 mol / L.

[0153] Examples 13 to 32 are similar to Example 1, except that the additives used in step (4) of Examples 13 to 32 are different from those in Example 1. The solar cells 100 obtained in Examples 13 to 32 are labeled as cells 13 to 32, respectively.

[0154] Example 33 is similar to Example 1, except that the solar cell 100 in Example 33 is a formal structure. After step (2) and before step (4), an electron transport layer 50 is prepared. The specific preparation process includes: taking an aqueous colloidal dispersion of 15% tin oxide by mass, diluting it with water at a ratio of 1:3, stirring it thoroughly, and filtering it through a 0.22 μm filter membrane to obtain a precursor solution. The obtained precursor solution is then dropped onto an FTO conductive glass treated with ultraviolet ozone, spin-coated at 3000 rpm for 30 seconds, and annealed at 150°C for 15 minutes to obtain an electron transport layer 50 with a thickness of 20 nm. In step (4), a light absorption layer 10 is formed on the surface of the electron transport layer 50 away from the FTO conductive glass. After step (4) and before step (6), a hole transport layer 40 is prepared. The specific preparation process includes: first preparing an acetonitrile solution of Li-TFSI with a concentration of 520 mg / mL, ultrasonically dissolving it for 10 minutes, and then setting it aside for use. A 300 mg / mL FK209 acetonitrile solution was prepared. A 73 mg / mL Spiro-OMeTAD chlorobenzene solution was then prepared and sonicated for 10 min. 18 μL of Li-TFSI acetonitrile solution, 30 μL of tBP, and 29 μL of FK209 acetonitrile solution were added to 1 mL of the Spiro-OMeTAD chlorobenzene solution, and the mixture was stirred to obtain a precursor solution for later use. The obtained precursor solution was dropped onto the light-absorbing layer 10 and spin-coated at 3000 rpm for 30 s to obtain a hole transport layer 40 with a thickness of 70 nm. The hole transport layer 40 was formed on the surface of the light-absorbing layer 10 away from the FTO conductive glass. The solar cell 100 obtained in Example 33 is designated as cell 33.

[0155] Comparative Example 1 is similar to Example 1, except that no additives were added in step (4) of Comparative Example 1. The solar cell 100 obtained in Comparative Example 1 is labeled as cell 34.

[0156] Please refer to Figures 8 and 9. Figure 8 is a microscopic morphology image of the light-absorbing layer prepared in Example 1, and Figure 9 is a microscopic morphology image of the light-absorbing layer prepared in Comparative Example 1. Referring to Figures 8 and 9, the perovskite material of the light-absorbing layer 10 in Example 1 has larger grains, fewer grain boundaries, and fewer surface defects compared to the perovskite material of the light-absorbing layer 10 in Comparative Example 1.

[0157] Comparative Example 2 is similar to Example 12, except that no additives were added in step (4) of Comparative Example 2. The solar cell 100 obtained in Comparative Example 2 is labeled as cell 35.

[0158] Comparative Example 3 is similar to Example 33, except that no additives were added in step (4) of Comparative Example 3. The solar cell 100 obtained in Comparative Example 3 is labeled as cell 36.

[0159] Performance tests were performed on the solar cells 100 of each embodiment and comparative example:

[0160] The solar simulator was used to test the solar energy according to the IEC61215 standard. The light intensity was corrected using a crystalline silicon solar cell to achieve a solar intensity (the solar energy test standard is AM1.5). The solar cell 100 was connected to a digital source meter, and its photoelectric conversion efficiency was measured under illumination. The photoelectric conversion efficiency on the third day can reflect the photoelectric conversion capability of the solar cell 100, and the photoelectric conversion efficiency on the thirtieth day can reflect the stability of the solar cell 100.

[0161] Table 1. Performance test results of solar cells in Examples 1-33 and Comparative Examples 1-3

[0162] Note: The molar percentage of additives refers to the molar amount of additives relative to the molar amount of divalent cations.

[0163] Analyzing the test data of Examples 1 to 33 and Comparative Example 1, compared with the solar cell 100 without additives, except for Example 11, the photoelectric conversion efficiency of the solar cell 100 with additives was improved on the 3rd and 30th days. This shows that the additives provided in this application are beneficial to improving the photoelectric conversion efficiency of the inverted solar cell 100. Among them, Example 11 is an all-inorganic perovskite cell, and its solar cell 100 has a low photoelectric conversion efficiency.

[0164] Analysis of the test data of Example 12 and Comparative Example 2 shows that, compared with the solar cell 100 without additives, the solar cell 100 with additives has improved photoelectric conversion efficiency on the 3rd and 30th days. This indicates that the additives provided in this application are beneficial to improving the photoelectric conversion efficiency of the inverted solar cell 100.

[0165] Analysis of the test data of Example 33 and Comparative Example 3 shows that, compared with the solar cell 100 without additives, the solar cell 100 with additives has improved photoelectric conversion efficiency on both day 3 and day 30. This indicates that the additives provided in this application are beneficial to improving the photoelectric conversion efficiency of the actual solar cell 100.

[0166] Analyzing the test data from Examples 1 to 9, it was found that adjusting the molar ratio of the additives is beneficial for controlling the photoelectric conversion efficiency of the solar cell 100.

[0167] Analysis of the test data from Examples 1, 10 to 12 shows that the additives of this application exhibit good photoelectric conversion efficiency when applied to perovskite material systems of different configurations.

[0168] Analyzing the test data from Examples 13 to 32, adjusting the type of additives is beneficial for controlling the photoelectric conversion efficiency of the solar cell 100.

[0169] Analysis of the test data from Examples 1 and 33 shows that the additives of this application exhibit good photoelectric conversion efficiency when applied to solar cells 100 in different systems.

[0170] In the several embodiments provided in this application, it should be understood that the disclosed systems, apparatuses, and methods can be implemented in other ways. For example, the apparatus embodiments described above are merely illustrative; for instance, the division of units is only a logical functional division, and in actual implementation, there may be other division methods. For example, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Furthermore, the coupling or direct coupling or communication connection shown or discussed may be through some interfaces, or indirect coupling or communication connection between apparatuses or units, and may be electrical, mechanical, or other forms.

[0171] Furthermore, the functional units in the various embodiments of this application can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit. The integrated unit can be implemented in hardware or as a software functional unit.

[0172] The above description is merely an embodiment of this application and does not limit the patent scope of this application. Any equivalent structural or procedural transformations made using the content of this application's specification and drawings, or direct or indirect applications in other related technical fields, are similarly included within the patent protection scope of this application.

Claims

1. A solar cell, wherein, The solar cell includes a first electrode layer, a light absorbing layer, and a second electrode layer, the light absorbing layer is located between the first electrode layer and the second electrode layer, the light absorbing layer includes a perovskite material and an additive, the additive includes one or more functional groups, the functional groups include one or more of an oxygen-containing acid group and its derivative, a thiocyanic acid group and its derivative, an amide group and its derivative, a hydrazide group and its derivative, a guanidine group and its derivative, the anion of the perovskite material includes one or more of a fluoride anion, a chloride anion, a bromide anion, or an iodide anion.

2. The solar cell of claim 1, wherein, The oxygen-containing acid group includes one or more of a carboxylic acid group, a sulfonic acid group, and a phosphonic acid group.

3. The solar cell according to claim 1 or 2, wherein The additive further includes one or more of a substituted or unsubstituted hydrocarbon group, a substituted or unsubstituted aryl group, and a substituted or unsubstituted heteroaryl group.

4. The solar cell of claim 3, wherein, The substituted group includes one or more of a halogen group, a hydroxyl group, and an acyl group.

5. The solar cell according to any one of claims 1 to 4, wherein The additive includes one or more of formic acid and its derivative, benzoic acid and its derivative, trifluorobenzoic acid and its derivative, 6-isoquinoline carboxylic acid and its derivative, acetic acid and its derivative, trifluoroacetic acid and its derivative, acrylic acid and its derivative, sulfonic acid and its derivative, benzene sulfonic acid and its derivative, thiocyanic acid and its derivative, phosphoric acid and its derivative, phenethylamine and its derivative, N-(2-aminoethyl)benzamide and its derivative, 4-hydroxybenzamide and its derivative, 5-hydroxyisophthalamide and its derivative, phthalhydrazide and its derivative, 2-aminobenzamide and its derivative, 4-hydroxybenzhydrazide and its derivative, carbonamide and its derivative, guanidine and its derivative.

6. The solar cell of claim 5, wherein, The derivative includes a salt, the cation of the salt includes one or more of a methylamine cation, a cesium cation, a formamidine cation, a guanidine cation, an amide cation, and a hydrazide cation.

7. The solar cell according to any one of claims 1 to 6, wherein The anion of the perovskite material includes any one of a fluoride anion, a chloride anion, a bromide anion, or an iodide anion.

8. The solar cell according to any one of claims 1 to 7, wherein The anion of the perovskite material includes an iodide anion.

9. The solar cell according to any one of claims 1 to 8, wherein, The band gap of the perovskite material is in a range of 1.20 eV to 2.30 eV.

10. The solar cell according to any one of claims 1 to 9, wherein The thickness of the light absorbing layer is in a range of 200 nm to 1000 nm.

11. The solar cell according to any one of claims 1 to 10, wherein The perovskite material has a general chemical formula of ABX3 or A2CDX6. A includes one or more of a cesium cation, a formamidine cation, a methylamine cation, a rubidium cation, and a guanidine cation; B includes one or both of a tin cation and a lead cation; C includes a silver cation; D includes one or more of a bismuth cation, an antimony cation, and an indium cation; and X includes one or more of a fluoride anion, a chloride anion, a bromide anion, and an iodide anion.

12. The solar cell according to any one of claims 1 to 11, wherein The solar cell further includes a hole transport layer, the hole transport layer is located between the first electrode layer or the second electrode layer and the light absorbing layer.

13. The solar cell of claim 12, wherein, The hole transport layer comprises a hole transport material, the hole transport material comprising one or more of nickel oxide, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], poly(3-hexylthiophene), poly 3,4-ethylenedioxythiophene: polystyrene sulfonate, 2,2',7,7'-tetrakis[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene.

14. The solar cell according to any one of claims 1 to 13, wherein The solar cell further comprises an electron transport layer, the electron transport layer being located between the second electrode layer or the first electrode layer and the light absorbing layer.

15. The solar cell of claim 14, wherein, The electron transport layer comprises an electron transport material, the electron transport material comprising one or more of tin oxide, titanium oxide, carbon 60, fullerene derivative.

16. A method of producing a solar cell as claimed in any one of claims 1 to 15, wherein, Comprising: providing a substrate structure, the substrate structure comprising at least a first electrode layer; disposing a perovskite precursor solution on the substrate structure, the perovskite precursor solution comprising a perovskite precursor and an additive, the additive comprising one or more functional groups, the functional groups comprising one or more of an oxoacid group and its derivatives, a thiocyanic acid group and its derivatives, an amide group and its derivatives, a hydrazide group and its derivatives, a guanidine group and its derivatives, the anion of the perovskite material comprising one or more of fluoride anion, chloride anion, bromide anion or iodide anion, the perovskite precursor solution forming a light absorbing layer after a nucleation and crystallization process; preparing a second electrode layer on the light absorbing layer.

17. The method of producing a solar cell according to claim 16, wherein The perovskite precursor comprises divalent metal cations, the molar amount of the additive being 0.01% to 20% of the molar amount of the divalent metal cations.

18. An electrical device, comprising: A solar cell comprising the solar cell of any one of claims 1 to 15 or prepared by the method of preparing a solar cell of claim 16 or 17.

19. A power generation apparatus wherein, A solar cell comprising the solar cell of any one of claims 1 to 15 or prepared by the method of preparing a solar cell of claim 16 or 17.

Citation Information

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