Solar cell, photovoltaic module, electrical device, and power generation device

By setting protective grooves and filling protective layers in perovskite solar cells, the problem of poor photoelectric performance was solved, higher photoelectric conversion efficiency and stability were achieved, the service life was extended, and the fabrication process was simplified.

WO2026017122A1PCT designated stage Publication Date: 2026-01-22CONTEMPORARY AMPEREX FUTURE ENERGY RES INST (SHANGHAI) LTD +1
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Patent Information

Application Number
PCT/CN2025/109114
Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
Priority Date
2024-07-18
Filing Date
2025-07-17
Publication Date
2026-01-22

AI Technical Summary

Technical Problem

Existing perovskite solar cells have low photoelectric performance and stability, resulting in poor device photoelectric performance.

Method used

By setting a first protective trench and a second protective trench in the solar cell, the protective layer is divided and filled in the thickness direction of the light-absorbing layer and the electrode layer, respectively, to prevent halide ion corrosion and water-oxygen diffusion, isolate carrier recombination, extend service life, and maintain carrier transport efficiency.

Benefits of technology

It improves the photoelectric conversion efficiency and stability of solar cells, reduces the risk of device decomposition, extends the service life, and simplifies the fabrication process.

✦ Generated by Eureka AI based on patent content.

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Abstract

The present application relates to a solar cell, a photovoltaic module, an electrical device, and a power generation device. The solar cell comprises a first electrode layer, a light-absorbing layer, and a second electrode layer which are stacked. The solar cell is provided with a first groove, a second groove, a third groove, and a first protective groove. The first groove divides the first electrode layer. The second groove divides the light-absorbing layer and a part of the second electrode layer and exposes the first electrode layer. The third groove divides the second electrode layer. The first protective groove divides the light-absorbing layer and a part of the second electrode layer. The second electrode layer comprises a main conductive portion disposed on the light-absorbing layer and a connecting conductive portion disposed in the second groove. The solar cell further comprises a first protective layer and a second protective layer. The first protective layer is disposed in the first protective groove and separates the light-absorbing layer from the connecting conductive portion. Two sides of the second protective layer are covered by the main conductive portion and connected to the first protective layer. A projection of the second protective layer on the first electrode layer is less than a projection of the light-absorbing layer on the first electrode layer.
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Description

Solar cell, photovoltaic module, power consuming device and power generating device

[0001] Related applications

[0002] The present application claims priority to the Chinese patent application No. 2024109698332 filed on July 18, 2024, and entitled "Solar cell, photovoltaic module, power consuming device and power generating device", the whole content of which is incorporated herein by reference. TECHNICAL FIELD

[0003] The present application relates to the technical field of battery, in particular to a solar cell, a photovoltaic module, a power consuming device and a power generating device. BACKGROUND

[0004] A solar cell is a new photovoltaic device that directly converts solar radiation energy into electrical energy by photovoltaic effect. Taking a perovskite solar cell as an example, it uses perovskite material as a light absorption layer, has the advantages of low cost, high weak light effect and wide application scenarios, and is an excellent choice for mass production of new generation photovoltaic cells, which can alleviate the energy crisis. However, the current solar cell has the problem of low photovoltaic performance and stability of the device. Therefore, the traditional technology needs to be improved. SUMMARY

[0005] In order to achieve the above purpose, the present application provides a solar cell, a photovoltaic module, a power consuming device and a power generating device capable of improving the photovoltaic performance and stability of the device.

[0006] The present application is realized by the following technical solutions.

[0007] In a first aspect, the present application provides a solar cell, comprising a first electrode layer, a light absorption layer and a second electrode layer which are stacked;

[0008] The solar cell is provided with a first groove, a second groove and a third groove, the first groove is arranged in the first electrode layer and divides the first electrode layer along the thickness direction of the solar cell, the second groove divides the light absorption layer and part of the second electrode layer along the thickness direction of the solar cell and exposes the first electrode layer, and the third groove divides the second electrode layer along the thickness direction of the solar cell;

[0009] The second electrode layer comprises a main conductive part arranged on the side of the light absorption layer away from the first electrode layer and a connecting conductive part arranged in the second groove, the main conductive part and the connecting conductive part are connected, and the connecting conductive part is connected with the first electrode layer;

[0010] The solar cell further comprises a first protective groove which separates the light-absorbing layer and part of the second electrode layer along the thickness direction of the solar cell, and the second groove is located between the first protective groove and the third groove; the solar cell further comprises a first protective layer and a second protective layer; the first protective layer is filled in the first protective groove and separates the light-absorbing layer and the connecting conductive part along a first direction, the second protective layer is at least wrapped by the main conductive part along two sides in the thickness direction of the solar cell and connected with the first protective layer, a projection of the second protective layer on the first electrode layer along the thickness direction of the solar cell is smaller than a projection of the light-absorbing layer on the first electrode layer along the thickness direction of the solar cell; the first direction intersects the thickness direction of the solar cell.

[0011] The first protective layer of the above solar cell is arranged in the first protective groove and separates the light-absorbing layer and the connecting conductive part along the first direction, which can prevent the connecting conductive part in the second groove from contacting the side surface of the light-absorbing layer, thereby preventing the corrosion of the connecting conductive part by halogen ions in the light-absorbing layer such as perovskite layer, and also preventing carrier recombination, ion migration, water and oxygen diffusion, and contact between the light-absorbing layer and air, thereby reducing the risk of decomposition of the light-absorbing layer such as perovskite layer and prolonging the service life of the solar cell. In addition, the second protective layer is wrapped on both sides by the main conductive part, and is connected with the first protective layer, and the projection of the second protective layer on the first electrode layer is smaller than the projection of the light-absorbing layer on the first electrode layer, so that the main conductive part below the second protective layer can collect carriers, and therefore the setting of the second protective layer does not expand the dead zone of the cell, and the setting of the second protective layer basically does not affect the carrier transmission between the second electrode layer and the light-absorbing layer, and has little effect on the overall resistance of the cell. At the same time, the first protective layer is connected with the second protective layer embedded in the inside of the main conductive part, which can improve the structural stability of the first protective layer, so that the above solar cell can obtain good photoelectric conversion efficiency and improve the stability of the cell device.

[0012] In some embodiments, the solar cell is provided with a second protective groove which separates the light-absorbing layer and part of the second electrode layer along the thickness direction of the solar cell, and the second protective groove and the first protective groove are respectively located on both sides of the second groove along the first direction;

[0013] The solar cell further comprises a third protective layer and a fourth protective layer, the third protective layer is arranged in the second protective groove and separates the light-absorbing layer from the connecting conductive part in the second groove along a first direction, the fourth protective layer is at least wrapped by the main body conductive part along a side of the solar cell close to the light-absorbing layer in a thickness direction of the solar cell and is connected with the third protective layer, a projection of the fourth protective layer on the first electrode layer along the thickness direction of the solar cell is smaller than a projection of the light-absorbing layer on the first electrode layer along the thickness direction of the solar cell.

[0014] In this way, the third protective layer can also prevent the light-absorbing layer from contacting air and water oxygen diffusing to the light-absorbing layer, and the fourth protective layer has a similar effect to the second protective layer. The light-absorbing layer of each sub-cell formed by being divided by the above groove can be protected by the protective layer on both sides.

[0015] In some embodiments, the third groove separates the connecting conductive part from the third protective layer along a first direction.

[0016] Alternatively, the third groove separates the main body conductive part on the fourth protective layer along a thickness direction of the solar cell.

[0017] In some embodiments, the span of the second protective layer and the fourth protective layer in a first direction is denoted as W1, the width of the second protective layer and the fourth protective layer in the first direction is denoted as L1 and L2 respectively, the spacing between the second protective layer and the fourth protective layer in the first direction is denoted as L3, W1=L1+L2+L3, and the width of the sub-cell divided by the solar cell in the first direction is W2,

[0018] In some embodiments, W1 / W2≤80%.

[0019] In some embodiments, W1 / W2 is 2.5% to 50%, and can be 5% to 40%.

[0020] In some embodiments, W1 is 150 μm to 3000 μm, and can be 150 μm to 700 μm. In this way, the span W1 is in the range, which can make the area of the protective layer deposited in the process appropriate, reduce the deposition difficulty, and simplify the process.

[0021] In some embodiments, the thickness of the second protective layer and the fourth protective layer is independently 5 nm to 200 nm, and can be 10 nm to 80 nm.

[0022] In some embodiments, the width of the first protective groove and the second protective groove is independently 15 μm to 100 μm.

[0023] In some embodiments, the first trench and the first protective trench are staggered with each other in position.

[0024] In some embodiments, the second protective trench exposes the first electrode layer, and the first protective layer is disposed on the first electrode layer in the first protective trench.

[0025] In some embodiments, the first protective layer is embedded in the first electrode layer. In this way, the first protective layer embedded in the first electrode layer can provide more comprehensive isolation protection for the light-absorbing layer and improve the structural stability of the first protective layer.

[0026] In some embodiments, the materials of the first protective layer, the second protective layer, the third protective layer, and the fourth protective layer each independently include at least one of a conductive material and an insulating material.

[0027] In some embodiments, the materials of the first protective layer, the second protective layer, the third protective layer, and the fourth protective layer each independently include one or more of aluminum oxide, cerium oxide, zirconium oxide, titanium oxide, tin oxide, FTO, ITO, AZO, ATO, IGO, BZO, and Cr element.

[0028] In some embodiments, the first trench and the first protective trench are in communication with each other, the first protective layer is further embedded in the first trench and separates the first electrode layer, and the material of the first protective layer is an insulating material.

[0029] In this way, the first trench and the first protective trench can be formed in two steps or in one step, and the first protective layer can be filled in the first trench and the first protective trench in one step, thereby greatly simplifying the process. The first protective layer can provide more comprehensive isolation protection for the light-absorbing layer and improve the structural stability of the first protective layer.

[0030] In some embodiments, along the thickness direction of the solar cell, the main conductive part includes a first layer of sub-electrode layer and a second layer of sub-electrode layer arranged in a stack, the first layer of sub-electrode layer is located between the light-absorbing layer and the second layer of sub-electrode layer along the thickness direction of the solar cell, and the second protective layer and / or the fourth protective layer are located on the first layer of sub-electrode layer along the thickness direction of the solar cell and are partially covered by the second layer of sub-electrode layer.

[0031] In some embodiments, the solar cell satisfies one or more of the following conditions:

[0032] (1) The light-absorbing layer is a perovskite light-absorbing layer;

[0033] (2) the solar cell further comprises a first transport layer and a second transport layer, wherein the first transport layer is located between the first electrode layer and the light-absorbing layer, the second transport layer is located between the light-absorbing layer and the third electrode layer, the first transport layer is one of an electron transport layer and a hole transport layer, and the second transport layer is the other of the electron transport layer and the hole transport layer.

[0034] In a second aspect, the present application provides a method for preparing a solar cell, comprising the following steps:

[0035] A first trench is arranged on the first electrode layer for dividing the first electrode layer;

[0036] A light-absorbing layer and a first layer of sub-electrode layer are sequentially arranged on the first electrode layer provided with the first trench, and a first protection trench is arranged on the light-absorbing layer and the first layer of sub-electrode layer;

[0037] A protection layer is formed in the first protection trench and on a part of the first layer of sub-electrode layer;

[0038] A second trench is arranged on the obtained cell structure, and the second trench divides the protection layer, the first layer of sub-electrode layer and the light-absorbing layer on the first layer of sub-electrode layer;

[0039] A second layer of sub-electrode layer is formed on the obtained cell structure and in the second trench;

[0040] A third trench is arranged on a second electrode layer composed of the first layer of sub-electrode layer and the second layer of sub-electrode layer, and the third trench divides the second electrode layer.

[0041] The above method can form the protection layer in one process, thus simplifying the process. In addition, the solar cell prepared by the above method has the advantage of excellent device stability. The above method can form the protection layer by using a mask plate, which can avoid damage to the functional layer of the cell caused by etching.

[0042] In some embodiments, before forming the protection layer, the method further comprises the following steps:

[0043] A second protection trench is arranged on the light-absorbing layer and the first layer of sub-electrode layer, and the second protection trench is arranged at intervals with the first protection trench;

[0044] Correspondingly, the second protection trench, the first protection trench, the region between the two protection trenches and the part of the first layer of sub-electrode layer adjacent to the protection trench are exposed to form the protection layer in the exposed region;

[0045] The second trench is located between the second protection trench and the first protection trench.

[0046] In some embodiments, the first groove and the first protective groove are staggered or not staggered with each other.

[0047] In a second aspect of the present application, a preparation method of a solar cell is provided, comprising the following steps:

[0048] A light-absorbing layer and a first layer of sub-electrode layer are sequentially arranged on the first electrode layer, a first protective groove is arranged on the light-absorbing layer and the first layer of sub-electrode layer, and a first groove is arranged on the first electrode layer below the first protective groove;

[0049] A protective layer is formed on the first groove, in the first protective groove, and on a part of the first layer of sub-electrode layer;

[0050] A second groove is arranged on the obtained cell structure, and the second groove divides the protective layer on the first layer of sub-electrode layer, the first layer of sub-electrode layer, and the light-absorbing layer;

[0051] A second layer of sub-electrode layer is formed on the obtained cell structure and in the second groove;

[0052] A third groove is arranged on a second electrode layer composed of the first layer of sub-electrode layer and the second layer of sub-electrode layer, and the third groove divides the second electrode layer.

[0053] In this way, the first groove and the first protective groove are formed directly through one process, and then the protective layer is formed, which further simplifies the process, and the first protective layer is embedded in the first electrode layer, which can more comprehensively protect the light-absorbing layer and improve the structural stability of the first protective layer.

[0054] A third aspect of the present application provides a photovoltaic module, comprising the solar cell provided in the first aspect of the present application and the solar cell prepared by the preparation method provided in the second aspect of the present application.

[0055] A fourth aspect of the present application provides an electric device, comprising at least one selected from the solar cell provided in the first aspect of the present application, the solar cell prepared by the preparation method provided in the second aspect of the present application, and the photovoltaic module provided in the third aspect of the present application.

[0056] A fifth aspect of the present application provides a power generation device, comprising at least one selected from the solar cell provided in the first aspect of the present application, the solar cell prepared by the preparation method provided in the second aspect of the present application, and the photovoltaic module provided in the third aspect of the present application.

[0057] The details of one or more embodiments of the present application are presented in the following drawings and description. Other features, objects, and advantages of the present application will become apparent from the description, drawings, and claims. BRIEF DESCRIPTION OF DRAWINGS

[0058] To better describe and illustrate the embodiments or examples provided in this application, reference may be made to one or more accompanying drawings. Additional details or examples used to describe the drawings should not be considered as limiting the scope of any of the disclosed applications, the currently described embodiments or examples, or the best mode of conduct of these applications as currently understood. Furthermore, the same reference numerals denote the same parts throughout the drawings. In the drawings:

[0059] Figure 1 is a schematic diagram of a partial cross-sectional structure of a solar cell according to an embodiment of this application.

[0060] Figure 2 is a schematic diagram of a partial cross-sectional structure of a solar cell according to another embodiment of this application.

[0061] Figure 3 is a schematic diagram of a partial cross-sectional structure of a solar cell according to another embodiment of this application.

[0062] Figure 4 is a schematic diagram of a partial cross-sectional structure of a solar cell according to another embodiment of this application.

[0063] Figure 5 is a schematic diagram of the structure of one state in the fabrication process of the solar cell shown in Figure 1 of this application.

[0064] Figure 6 is a schematic diagram of the structure of one state in the fabrication process of the solar cell shown in Figure 1 of this application.

[0065] Figure 7 is a schematic diagram of the structure of one state in the fabrication process of the solar cell shown in Figure 1 of this application.

[0066] Figure 8 is a schematic diagram of the structure of one state in the fabrication process of the solar cell shown in Figure 1 of this application.

[0067] Figure 9 is a schematic diagram of an electrical device using a solar cell as a power source according to an embodiment of this application.

[0068] Explanation of reference numerals in the attached drawings: 1. Solar cell; 110. Substrate; 120. First electrode layer; 130. Light-absorbing layer; 140. Second electrode layer; 141. Main conductive part; 142. Connecting conductive part; 143. First sub-electrode layer; 144. Second sub-electrode layer; 150. Protective layer; 151. First protective layer; 152. Second protective layer; 153. Third protective layer; 154. Fourth protective layer; 160. First transport layer; 170. Second transport layer; P1. First trench; P2. Second trench; P3. Third trench; P12. First protective trench; P14. Second protective trench; 2. Electrical device. Detailed Implementation

[0069] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0070] The "range" disclosed in this application can be defined in the form of a lower limit and an upper limit. A given range is defined by selecting a lower limit and an upper limit, which define the boundaries of a particular range. Ranges defined in this way can include or exclude endpoints; any endpoint can be independently included or excluded, and they can be combined arbitrarily, meaning any lower limit can be combined with any upper limit to form a range. For example, if ranges of 60-120 and 80-110 are listed for a specific parameter, it is expected that ranges of 60-110 and 80-120 are also included. Furthermore, if minimum range values ​​1 and 2 are listed, and maximum range values ​​3, 4, and 5 are also listed, then the following ranges are all expected: 1-3, 1-4, 1-5, 2-3, 2-4, and 2-5. In this application, unless otherwise stated, the numerical range "ab" represents a shortened representation of any combination of real numbers between a and b, where a and b are real numbers. For example, the numerical range "0-5" indicates that all real numbers between "0-5" have been listed in this document; "0-5" is simply a shortened representation of these numerical combinations. Furthermore, stating that a parameter is an integer ≥2 is equivalent to disclosing that the parameter is, for example, an integer 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, etc. For instance, stating that a parameter is an integer selected from "2-10" is equivalent to listing the integers 2, 3, 4, 5, 6, 7, 8, 9, and 10.

[0071] In this application, the terms "multiple" or "various" are used unless otherwise specified, referring to a quantity greater than or equal to 2. For example, "one or more" means one or more types.

[0072] Unless otherwise specified, all embodiments and optional embodiments of this application can be combined to form new technical solutions.

[0073] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment or implementation of this application. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments. The term "implementation" as used herein has a similar understanding.

[0074] Those skilled in the art will understand that the order in which the steps are written in the methods of various embodiments or examples does not imply a strict execution order and does not constitute any limitation on the implementation process. The detailed execution order of each step should be determined by its function and possible internal logic. Unless otherwise specified, all steps of this application may be performed sequentially or randomly, preferably sequentially. For example, if the method includes steps (a) and (b), it means that the method may include steps (a) and (b) performed sequentially, or it may include steps (b) and (a) performed sequentially. For example, if the method may also include step (c), it means that step (c) can be added to the method in any order. For example, the method may include steps (a), (b), and (c), or it may include steps (a), (c), and (b), or it may include steps (c), (a), and (b), etc.

[0075] In this application, open-ended technical features or solutions described using terms such as "containing," "including," or "comprising" do not exclude additional members beyond those listed unless otherwise specified. They can be considered as providing both closed-ended features or solutions comprised of the listed members and open-ended features or solutions that include additional members beyond the listed members. For example, if A includes a1, a2, and a3, it may also include other members or exclude additional members unless otherwise specified. This can be considered as providing both the feature or solution that "A consists of a1, a2, and a3" and the feature or solution that "A includes not only a1, a2, and a3, but also other members."

[0076] In this application, unless otherwise specified, A (e.g., B) means that B is a non-limiting example of A, and it is understood that A is not limited to B.

[0077] In this application, "optionally," "optionally," and "optional" mean that something is optional, that is, it means that it is selected from either "with" or "without." If there are multiple "optional" entries in a technical solution, unless otherwise specified and there are no contradictions or mutual constraints, each "optional" entry shall be independent.

[0078] As described in the background section, current solar cells suffer from low photoelectric performance stability. To address this, this application constructs a protective trench to form a protective layer within it. This protective layer protects the light-absorbing layer and separates it from the electrode material, thereby suppressing interactions between the light-absorbing layer and air, water, and oxygen, as well as between the light-absorbing layer and the electrode material, thus improving the performance stability of both the light-absorbing layer and the electrode material. Furthermore, this application also improves the structural stability of the two protective layers by forming another protective layer in the electrode layer above the light-absorbing layer, connected to the protective layer in the protective trench. Since this second protective layer does not completely cover the light-absorbing layer and the electrode material is disposed below it, its placement has minimal impact on carrier transport in the electrode layer. This improves the photoelectric conversion efficiency and performance stability of the solar cell.

[0079] Referring to Figure 1, a first aspect of this application provides a solar cell 1, including a first electrode layer 120, a light-absorbing layer 130, and a second electrode layer 140 stacked together. The solar cell 1 also includes a first protective layer 151 and a second protective layer 152.

[0080] The solar cell 1 has a first trench P1, a second trench P2, and a third trench P3. The first trench P1 is disposed on the first electrode layer 120 and divides the first electrode layer 120 along the thickness direction Y of the solar cell 1. The second trench P2 divides the light-absorbing layer 130 and part of the second electrode layer 140 along the thickness direction Y of the solar cell 1, exposing the first electrode layer 120. The third trench P3 divides the second electrode layer 140 along the thickness direction Y of the solar cell 1.

[0081] The second electrode layer 140 includes a main conductive portion 141 disposed on the light-absorbing layer 130 on the side away from the first electrode layer 120 and a connecting conductive portion 142 disposed in the second trench P2. The main conductive portion 141 and the connecting conductive portion 142 are connected, and the connecting conductive portion 142 is connected to the first electrode layer 120. That is, the main conductive portions 141 of the first electrode layer 120, the light-absorbing layer 130 and the second electrode layer 140 are stacked, and the connection of the connecting conductive portion 142 to the first electrode layer 120 enables conduction between adjacent sub-cells.

[0082] The solar cell 1 is also provided with a first protective trench P12. The first protective trench P12 divides the light-absorbing layer 130 and part of the second electrode layer 140 along the thickness direction Y of the solar cell 1, and the second trench P2 is located between the first protective trench P12 and the third trench P3.

[0083] The first protective layer 151 fills the first protective groove P12 and separates the light-absorbing layer 130 and the connecting conductive part 142 along the first direction X. The second protective layer 152 is covered by the main conductive part 141 on at least two sides along the thickness direction Y of the solar cell 1 and is connected to the first protective layer 151. The projection of the second protective layer 152 along the thickness direction Y of the solar cell onto the first electrode layer 120 is smaller than the projection of the light-absorbing layer 130 along the thickness direction Y of the solar cell onto the first electrode layer 120. The thickness direction Y intersects with the first direction X. Further, the thickness direction Y is perpendicular to the first direction X. Further, the projection of the main conductive part 141 onto the first electrode layer 120 is greater than or equal to the projection of the light-absorbing layer 130 onto the first electrode layer 120.

[0084] In other words, a portion of the main conductive portion 141 is disposed between the second protective layer 152 and the light-absorbing layer 130. This main conductive portion 141 can transmit charge carriers from the light-absorbing layer 130. Therefore, the placement of the second protective layer 152 has virtually no impact on the charge carrier transmission between the second electrode layer 140 and the light-absorbing layer 130, and has little effect on the overall resistance of the battery. Furthermore, the second protective layer 152 is located within the main conductive portion 141, that is, the second protective layer 152 is covered by the main conductive portion 141 and the first protective layer 151.

[0085] In the aforementioned solar cell, the first protective layer 151 is disposed within the first protective trench P12 and separates the light-absorbing layer 130 and the connecting conductive portion 142 in the first direction X. This prevents the connecting conductive portion 142 in the second trench P2 from contacting the side of the light-absorbing layer 130. Thus, on the one hand, it prevents the corrosion of the connecting conductive portion 142 by halide ions in the light-absorbing layer 130 (such as the perovskite layer), and on the other hand, it blocks carrier recombination, ion migration, water and oxygen diffusion, and the contact between the light-absorbing layer 130 and air, reducing the risk of decomposition of the light-absorbing layer 130 and extending the lifespan of the solar cell. Furthermore, the second protective layer 152 is covered on both sides by the main conductive portion 141 and is connected to the first protective layer 151. The projection of the first protective layer 152 onto the first electrode layer 120 is smaller than the projection of the light-absorbing layer 130 onto the first electrode layer 120. As a result, the material of the main conductive part 141 below the second protective layer 152 can collect charge carriers. Therefore, the setting of the second protective layer 152 will not expand the dead zone of the battery. The setting of the second protective layer 152 basically does not affect the charge carrier transport between the second electrode layer 140 and the light-absorbing layer 130, and has little impact on the overall resistance of the battery. At the same time, the first protective layer 151 is connected to the second protective layer 152 embedded in the main conductive part 141, which can improve the structural stability of the first protective layer 151. Therefore, the above-mentioned solar cell 1 can obtain good photoelectric conversion efficiency and improve the stability of the battery device.

[0086] In some embodiments, the third trench P3 may divide only the second electrode layer 140 along the thickness direction Y of the solar cell 1, or divide both the second electrode layer 140 and the light-absorbing layer 130 along the thickness direction Y of the solar cell 1.

[0087] Understandably, the first trench P1, the second trench P2, and the third trench P3 are etched regions arranged across layers, used to divide the large-area film layer into different components, making it a battery structure with multiple sub-cells connected in series. The first trench P1 divides the first electrode layer 120 of two adjacent sub-cells to separate the first electrode layer 120 of the sub-cells. The second trench P2 is provided with a connecting conductive part 142 that contacts the first electrode layer 120, thereby forming a passage between the structural layer of the first electrode layer 120 of one sub-cell and the second electrode layer 140 of another sub-cell. The third trench P3 at least divides the second electrode layer 140 to prevent short circuits between two adjacent sub-cells, thereby connecting multiple perovskite sub-cells in series to form a solar cell.

[0088] The first trench P1, the second trench P2, and the third trench P3 can each be an independent linear etching region, also known as an etching line. The first trench P1, the second trench P2, and the third trench P3 can each be an independent laser etching region. The number of the first trench P1, the second trench P2, and the third trench P3 can each be one or more. In some embodiments, the number of the first trench P1, the second trench P2, and the third trench P3 is the same and they appear in groups to achieve series connection of multiple sub-cells. In some embodiments, the solar cell 1 is provided with a second protective trench P14, which divides the light-absorbing layer 130 and a portion of the second electrode layer 140 along the thickness direction Y of the solar cell 1. The second protective trench P14 and the first protective trench P12 are located on opposite sides of the second trench P2.

[0089] The solar cell 1 also includes a third protective layer 153 and a fourth protective layer 154. The third protective layer 153 is disposed within the second protective trench P14 and separates the light-absorbing layer 130 and the connecting conductive portion 142 in the second trench P2 along the first direction. The fourth protective layer 154 is covered by the main conductive portion 141 and connected to the third protective layer 153 at least along the thickness direction Y of the solar cell near the light-absorbing layer 130. The projection of the fourth protective layer 154 along the thickness direction Y of the solar cell 1 onto the first electrode layer 120 is smaller than the projection of the light-absorbing layer 130 along the thickness direction Y of the solar cell 1 onto the first electrode layer 120. Thus, the third protective layer 153 also serves to prevent the light-absorbing layer 130 from contacting air and preventing water and oxygen from diffusing into the light-absorbing layer 130. The function of the fourth protective layer 154 is similar to that of the second protective layer 152. In this way, both sides of the light-absorbing layer 130 of each sub-cell formed by the above-mentioned trench division can be protected by the protective layers. Please continue referring to Figure 1. Further, in this specific example, the third trench P3 is located between the second trench P2 and the second protective trench P14 along the first direction X, dividing the second electrode layer 140 and the light-absorbing layer 130 along the thickness direction Y of the solar cell 1. Further, the third trench P3 separates the conductive connecting portion 142 and the third protective layer 153 along the first direction X.

[0090] Please refer to Figure 2. In the specific example shown in Figure 2, the third trench P3 divides the main conductive part 141 located on the fourth protective layer 154 along the thickness direction Y of the solar cell 1 to achieve the division of the second electrode layer 140.

[0091] It is worth noting that the widths of the second protective layer 152 and the fourth protective layer 154 in the first direction X are greater than 0 and less than the width of the light-absorbing layer 130. The first direction X intersects the thickness direction Y of the solar cell 1. Optionally, the first direction X is perpendicular to the thickness direction of the solar cell 1 to facilitate the fabrication of the solar cell 1.

[0092] The widths of the second protective layer 152 and the fourth protective layer 154 are greater than 0. This serves two purposes: firstly, it allows them to connect with the first protective layer 151 and the third protective layer 153, enhancing the structural stability of the first and second protective layers 151 and 152; secondly, from a fabrication process perspective, the widths of the first and second protective layers 151 and 152 should be minimized to reduce dead zones. However, the smaller the widths of the first and second protective layers 151 and 152, the higher the alignment requirements for the first protective groove P12 and the second protective groove P14. Therefore, this application can employ a method including a photomask to simultaneously deposit protective layers within the first protective groove P12 and above portions of the main conductive parts 141 on both sides of the first protective groove P12. Taking the photomask method as an example, a cutout area on the photomask corresponds to the area above the first protective groove P12 and portions of the main conductive parts 141 on both sides of the first protective groove P12, reducing alignment requirements and improving process operability.

[0093] Furthermore, when both the first protective trench P12 and the second protective trench P14 are present, a protective layer can be deposited simultaneously on the areas within the first protective trench P12, the second protective trench P14, the areas between the first and second protective trenches P12 and P14, and the area above the portion of the main conductive part 141 adjacent to the first and second protective trenches P12 and P14, using a method including a photomask. Taking the photomask method as an example, a cutout area on the photomask corresponds to the first protective trench P12, the second protective trench P14, and the area above the portion of the main conductive part 141 adjacent to the first and second protective trenches P12 and P14. This increases the area of ​​the cutout area or the deposited area, reducing the difficulty of photomask alignment and deposition, and simplifying the fabrication process.

[0094] The second protective layer 152 and the fourth protective layer 154 are disposed within the main conductive portion 141 of the second battery. A portion of the main conductive portion 141 separates the second protective layer 152 and the fourth protective layer 154 from the lower light-absorbing layer 130, so that the second protective layer 152 and the fourth protective layer 154 do not directly contact the light-absorbing layer. Furthermore, the projection of the fourth protective layer 154 on the first electrode layer 120 is smaller than the projection of the light-absorbing layer 130 on the first electrode layer 120. At the same time, the main conductive portions 141 on the upper and lower surfaces of the second protective layer 152 can make contact with each other. Therefore, the second protective layer 152 and the fourth protective layer 154 have virtually no impact on the carrier transport between the second electrode layer 140 and the light-absorbing layer 130, and have little impact on the overall resistance of the battery. Thus, the material selection range for the second protective layer 152 and the fourth protective layer 154 is very large, including but not limited to insulating materials. The first protective layer 151 and the third protective layer 153 are disposed within the protective groove and do not require consideration of carrier transport performance, so their selection range is very large, including but not limited to insulating materials. Therefore, in some embodiments, the material of each protective layer independently includes at least one of a conductive material and an insulating material. That is, the materials of the first protective layer 151, the second protective layer 152, the third protective layer 153, and the fourth protective layer 154 may be the same or different, and each material includes at least one of a conductive material and an insulating material. Further, the conductivity of the conductive material is less than the conductivity of the second electrode layer 140.

[0095] In particular, in order to provide better insulation protection, the materials of the first protective layer 151 and the third protective layer 153 include insulating materials.

[0096] Furthermore, the aforementioned insulating material includes at least one of inorganic insulating materials and organic insulating materials. Further, the inorganic insulating material includes at least one of metal oxides and non-metal oxides.

[0097] Examples of inorganic insulating materials include, but are not limited to, at least one of aluminum oxide, cerium oxide, zirconium oxide, and titanium oxide.

[0098] As examples of inorganic insulating materials, non-metallic oxides include, but are not limited to, silicon dioxide.

[0099] Furthermore, the aforementioned conductive materials include, but are not limited to, at least one of metallic conductive materials and metal oxide conductive materials.

[0100] As an example, metallic conductive materials may include, but are not limited to, elemental Cr.

[0101] As an example, metal oxide conductive materials include, but are not limited to, at least one of tin oxide, indium tin oxide (ITO), fluorine-doped tin oxide (FTO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), antimony-doped tin oxide (ATO), boron-doped zinc oxide (BZO), and gallium-doped indium oxide (IGO). For example, when the second electrode layer 140 is a metal electrode layer, the material of the protective layer can be a metal oxide conductive material.

[0102] In some embodiments, the materials of the first protective layer 151, the second protective layer 152, the third protective layer 153, and the fourth protective layer 154 each independently include one or more of the following: alumina, cerium oxide, zirconium oxide, titanium oxide, tin oxide, FTO, ITO, AZO, ATO, IGO, BZO, and elemental Cr.

[0103] In some embodiments, the span between the second protective layer 152 and the fourth protective layer 154 in the first direction X is denoted as W1 (i.e., the width W1 of the protective layer 150 shown in FIG. 7). This span W1 refers to the distance between the farthest ends of adjacent second protective layers 152 and fourth protective layers 154 in the first direction X; in one implementation process, adjacent second protective layers 152 and fourth protective layers 154 are simultaneously deposited to form a continuous whole in one process, and then formed into spaced second protective layers 152 and fourth protective layers 154 by a process.

[0104] Please continue referring to Figure 1. In some embodiments, the widths of the second protective layer 152 and the fourth protective layer 154 in the first direction X are denoted as L1 and L2, respectively, and the distance between the second protective layer 152 and the fourth protective layer 154 in the first direction X is denoted as L3, where W1 = L1 + L2 + L3. The distance L3 refers to the distance between the closest two ends of adjacent second protective layers 152 and fourth protective layers 154.

[0105] The width of the sub-cells into which solar cell 1 is divided in the first direction X is W2. Further, W1 / W2 ≤ 80%. As an example, W1 / W2 can be 1%, 2%, 2.5%, 3.3%, 3.5%, 4%, 5%, 8%, 10%, 11%, 11.5%, 12%, 15%, 20%, 25%, 30%, 35%, 40%, 45%, 50%, 60%, 70%, 80%, or any two of the above values. By controlling the width ratio W1 / W2 in this way, the influence of the protective layer on the overall resistance of the cell can be minimized while ensuring good stability of the protective layer, thereby enabling the cell to achieve better photoelectric conversion efficiency.

[0106] Optionally, the w1 / w2 ratio is 2.5% to 50%. Further, the w1 / w2 ratio can be 5% to 40%. Even further, the w1 / w2 ratio can be 5% to 15%.

[0107] Furthermore, W1 = 150μm to 3000μm. As an example, W1 can be 150μm, 180μm, 200μm, 300μm, 400μm, 500μm, 600μm, 700μm, 800μm, 900μm, 1000μm, 1500μm, 2000μm, 2500μm, or 3000μm, or any two of the above values ​​as endpoints, as will be the case below. Further, W1 = 150μm to 700μm, which can be selected as 150μm to 500μm; even further, it can be 200μm to 350μm.

[0108] Furthermore, W2 = 5000μm to 8000μm. As an example, W2 can be 5000μm, 5500μm, 6000μm, 6500μm, 7000μm, 7500μm, or 8000μm, or it can be any two of the above point values ​​as end values, and so on below.

[0109] Furthermore, the widths L1 and L2 of the second protective layer 152 and the fourth protective layer 154 in the first direction X can be the same or different. In a specific example, L1 = L2. The range of L1 and L2 can be from 20μm to 1450μm. For example, it can be any of the following values: 20μm, 25μm, 30μm, 35μm, 40μm, 45μm, 50μm, 60μm, 80μm, 90μm, 95μm, 100μm, 150μm, 195μm, 200μm, 250μm, 295μm, 300μm, 400μm, 500μm, 600μm, 800μm, 1000μm, 1100μm, 1200μm, 1300μm, 1400μm, 14450μm, 1450μm, or any two of the above values ​​as endpoints. Further, L1 and L2 can be from 20μm to 300μm, or from 40μm to 300μm.

[0110] In some embodiments, the thickness of the second protective layer 152 and the fourth protective layer 154 (i.e., the width H of the protective layer 150 shown in FIG. 6) is 5nm to 200nm, and can be selected as 10nm to 80nm. It is understood that the thickness of the second protective layer 152 and the fourth protective layer 154 may be the same or different. As an example, their respective thicknesses can be 5nm, 10nm, 15nm, 20nm, 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, 90nm, 100nm, 120nm, 150nm, 160nm, 180nm, or 200nm.

[0111] In some embodiments, the widths of the first protective layer 151 and the third protective layer 153 in the first direction X are 15 μm to 100 μm. That is, the widths of the first protective groove P12 and the second protective groove P14 are 15 μm to 100 μm. It is understood that the widths of the first protective layer 151 and the third protective layer 153 may be the same or different. As an example, the width may be 15 μm, 20 μm, 30 μm, 40 μm, 50 μm, 60 μm, 70 μm, 80 μm, 90 μm, 100 μm, or within the range formed by any two of the above point values ​​as end values.

[0112] In some embodiments, the second protective groove P14 is configured to expose the first electrode layer 120, and the third protective layer 153 is disposed on the first electrode layer 120 within the second protective groove P14.

[0113] Referring to Figures 1 and 3, in some embodiments, the positions of the first trench P1 and the first protective trench P12 are offset from each other along the first direction X. That is, the projection of the first protective trench P12 onto the first electrode layer 120 along the thickness direction Y of the solar cell 1 is offset from the projection of the first trench P1 onto the first electrode layer 120 along the thickness direction Y of the solar cell 1, and the first trench P1 and the first protective trench P12 are not connected.

[0114] Referring to Figure 1, further, when the positions of the first trench P1 and the first protective trench P12 are staggered, the first protective trench P12 exposes the first electrode layer 120, and the first protective layer 151 is disposed on the first electrode layer 120 within the first protective trench P12. Thus, the first protective layer 151 and the third protective layer 153 are disposed in the same layer, facilitating the simultaneous creation of the first protective trench P12 and the second protective trench P14 by means of laser or other methods.

[0115] Alternatively, referring to Figure 3, when the positions of the first trench P1 and the first protective trench P12 are staggered, the first protective trench P12 divides part or all of the first electrode layer 120, and the first protective layer 151 is embedded in the first electrode layer 120. The first protective layer 151 may not penetrate the first electrode layer 120 or may penetrate the first electrode layer 120. In this way, the first protective layer 151 is embedded in part or all of the first electrode layer 120, which can provide more comprehensive isolation and protection for the light-absorbing layer 130, and can also improve the structural stability of the first protective layer 151.

[0116] Referring to Figure 4, in some embodiments, the first trench P1 and the first protective trench P12 are interconnected. The first protective layer 151 is also embedded in the first trench P1 along the thickness direction Y of the solar cell 1 and penetrates the first electrode layer 120 to divide the first electrode layer 120. The material of the first protective layer 151 is an insulating material. In other words, the projection of the first protective trench P12 on the first electrode layer 120 is partially or entirely located within the first trench P1. Further, the projection of the first protective trench P12 on the first electrode layer 120 overlaps with the first trench P1. Further, the first protective layer 151 is an insulating material layer.

[0117] Thus, the first trench P1 and the first protective trench P12 can be formed in two steps or in one step, and the first protective layer 151 can be filled into the first trench P1 and the first protective trench P12 in one process, which greatly simplifies the process. The first protective layer 151 can provide more comprehensive isolation and protection for the light-absorbing layer 130, and can also improve the structural stability of the first protective layer 151.

[0118] Please continue referring to Figure 1. In some embodiments, along the thickness direction Y of the solar cell 1, the main conductive part 141 includes a first sub-electrode layer 143 and a second sub-electrode layer 144 stacked together. The first sub-electrode layer 143 is located between the light-absorbing layer 130 and the second sub-electrode layer 144 along the thickness direction Y of the solar cell 1. The second protective layer 152 and / or the fourth protective layer 154 are located on the first sub-electrode layer 143 along the thickness direction Y of the solar cell 1 and are partially covered by the second sub-electrode layer 144.

[0119] It should be noted that the materials of the first sub-electrode layer 143 and the second sub-electrode layer 144 can be the same or different. When the materials of the first sub-electrode layer 143 and the second sub-electrode layer 144 are the same, two layers without a clear interface can be formed between them, forming a uniform second electrode layer 140. In another embodiment, when the materials of the first sub-electrode layer 143 and the second sub-electrode layer 144 are the same, two layers with a clear interface are formed between them.

[0120] In some embodiments, the solar cell 1 further includes a substrate 110, and a first electrode layer 120, a light-absorbing layer 130, and a second electrode layer 140 are sequentially stacked on the substrate 110.

[0121] Furthermore, the substrate 110 is a transparent substrate, comprising either a glass substrate or an organic polymer film, wherein the organic polymer film comprises either polyethylene terephthalate (PET) or polyethylene naphthalate (PEN). The substrate 110 can be used as the incident side for sunlight.

[0122] In some embodiments, the solar cell 1 further includes an encapsulation layer (not shown), disposed on the second electrode layer 140, and sealed between the encapsulation layer and the substrate 110. The encapsulation layer is also referred to as a cover plate. Further, the encapsulation layer can be made of glass such as tempered glass.

[0123] Furthermore, a buffer adhesive layer (not shown) is also included between the encapsulation layer and the second electrode layer 140. The buffer adhesive layer can be formed by softening and casting the original film of the buffer adhesive layer under lamination conditions. The buffer adhesive layer can buffer the stress on the light-absorbing layers 130 such as the perovskite layer, and can also provide a certain sealing effect for the solar cell. The buffer adhesive layer contains at least one of polyolefin elastomer (POE), ethylene-vinyl acetate copolymer (EVA), thermoplastic polyurethane elastomer (TPU), and polyvinyl butyral (PVB).

[0124] Referring to Figures 1 to 4, the solar cell 1 further includes at least one of a first transport layer 160 and a second transport layer 170. The first transport layer 160 is disposed between the first electrode layer 120 and the light-absorbing layer 130; further, the second transport layer 170 is disposed between the second electrode layer 140 and the light-absorbing layer 130. One of the first transport layer 160 and the second transport layer 170 is an electron transport layer, and the other is a hole transport layer.

[0125] Referring to Figure 1, as an example, in one specific example, the first trench P1 penetrates the first electrode layer 120 and divides the first electrode layer 120; the material within the first trench P1 is consistent with the first transport layer 160. Referring to Figure 4, in another specific example, the material within the first trench P1 may also be consistent with the first protective layer 151. Referring to Figure 1, as an example, the first protective trench P12 and the second protective trench P14 penetrate portions of the second electrode layer 140 (i.e., the first sub-electrode layer 143), the second transport layer 170, the light-absorbing layer 130, and the first transport layer 160; the first protective trench P12 and the second protective trench P14 are spaced apart, with the first protective trench P12 located between the second protective trench P14 and the first trench P1. Referring to Figure 3, the difference from Figure 1 is that the first protective trench P12 penetrates portions of the second electrode layer 140 (i.e., the first sub-electrode layer 143), the second transport layer 170, the light-absorbing layer 130, the first transport layer 160, and the first electrode layer 120.

[0126] Please refer to Figure 1. As an example, the second trench P2 penetrates the protective layer, part of the second electrode layer 140 (i.e., the first sub-electrode layer 143), the second transport layer 170, the light-absorbing layer 130, and the first transport layer 160. The material of the second trench P2 is the same as the material of the second electrode layer 140 to connect the first electrode layer 120 and the second electrode layer 140 of the adjacent sub-cell.

[0127] Referring to Figure 1, the third trench P3 includes the second electrode layer (i.e., the second sub-electrode layer 144), a protective layer, a portion of the second electrode layer 140 (i.e., the first sub-electrode layer 143), the second transport layer 170, the light-absorbing layer 130, and the first transport layer 160, with adjacent second electrode layers 140 spaced apart. The third trench P3 may be filled with material or not, as those skilled in the art can choose according to actual needs. As an example, a PbSO4 protective layer can be filled outside the perovskite layer in the third trench P3 to protect the exposed light-absorbing layer 130, isolate it from water and oxygen, and improve the stability of the solar cell 1.

[0128] In some embodiments, the width of the first groove P1 is 10μm to 50μm, for example 10μm, 20μm, 30μm, 40μm, 50μm.

[0129] In some embodiments, the width of the second trench P2 is 10 μm to 200 μm, for example, 10 μm, 20 μm, 30 μm, 40 μm, 50 μm, 100 μm, 150 μm, 180 μm, or 200 μm. Further, the interval between the second trench P2 and the first trench P1 can be 20 μm to 80 μm, for example, 20 μm, 30 μm, 40 μm, 50 μm, 60 μm, 70 μm, or 80 μm.

[0130] In some embodiments, the width of the third trench P3 is 10 μm to 50 μm, for example, 10 μm, 15 μm, 20 μm, 30 μm, 40 μm, or 50 μm. Further, the interval between the third trench P3 and the second trench P2 can be 20 μm to 40 μm, for example, 20 μm, 30 μm, or 40 μm.

[0131] The materials for the electron transport layer include, but are not limited to, one or more of intrinsic n-type semiconductors, modified n-type semiconductors, methyl [6,6]-phenyl C61 butyrate (PC61BM), methyl [6,6]-phenyl C71 butyrate (PC71BM), fullerenes, and their derivatives. Intrinsic n-type semiconductors include one or more of tin oxide, titanium oxide, and zinc oxide; modified n-type semiconductors include intrinsic semiconductors doped with at least one of bismuth, aluminum, manganese, magnesium, and chlorine, such as one or more of tin oxide, titanium oxide, and zinc oxide. The electron transport layer can be prepared by spin coating, screen printing, vacuum evaporation, physical vapor deposition (PVD), chemical vapor deposition (CVD), or reactive plasma deposition (RPD). To further reduce non-radiative recombination at the interface, the electron transport layer may have an interface modification layer, including one or more of alkali metal halides, organic amine halides, and inorganic metal oxides. The electron transport layer can have a single-layer, double-layer, or multilayer structure.

[0132] The materials for the hole transport layer include, but are not limited to, one or more of the following: CuSCN, CuI, CuS, CuGaO2, MoS2, molybdenum oxide, copper phthalocyanine, copper-nickel composite oxide, nickel oxide, WO3, vanadium oxide, polymers of 3-hexylthiophene, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], polycarbazole-thiophene-benzothiadiazole-thiophene, 2,2',7,7'-tetratetra[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene (spiro-OMeTAD), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], and Me-2PACz ([2-(3,6-diphenyl-9H-carbazole-9-yl)ethyl]phosphoric acid). Methods for preparing hole transport layers include one or more of the following: spin coating, screen printing, physical vapor deposition (PVD), active plasma deposition (RPD), doctor blading, and slot die.

[0133] Furthermore, the thickness of the hole transport layer can be 10nm to 50nm. For example, its thickness can be 10, 20nm, 30nm, 40nm, or 50nm.

[0134] The light-absorbing layer 130 may be, but is not limited to, a perovskite light-absorbing layer. For example, the light-absorbing layer 130 may also include at least one of a dye-sensitized light-absorbing layer, a thin-film silicon light-absorbing layer, and an organic light-absorbing layer. The light-absorbing layer 130 can generate hole-electron pairs by absorbing light and being excited by photons. Under the action of an electric field, the holes and electrons are separated, and the electrons and holes are respectively transported to the first electrode layer 120 and the second electrode layer 140. Then, they are combined and led out to the external circuit through a busbar to form a loop, which can be used to drive the load.

[0135] Taking a perovskite light-absorbing layer as an example, the preparation method of the perovskite light-absorbing layer can be one or more commonly used methods in the field, including but not limited to spin coating, doctor blading, slot die coating, vacuum deposition, and inkjet printing. To further reduce interfacial non-radiative recombination, the perovskite light-absorbing layer may have an interfacial modification layer, including one or more of organic amine halide salts, organic thiocyanates, Lewis acids, and Lewis bases.

[0136] Furthermore, the crystal structure of the perovskite light-absorbing layer is ABX3 or A2CDX6. Here, A ions are monovalent cations, B ions are divalent metal cations, C ions are monovalent metal cations, D ions are trivalent metal cations, and X ions are monovalent anions.

[0137] Optionally, A ion is a monovalent cation with a large radius, including at least one of organic cations and metal cations. More preferably, the organic cation includes organic amine ions, formamidinyl (HC(NH2)2) ions, etc. + FA + At least one of ) and imidazole groups; more preferably, the metal cation includes Li + Sodium ions (Na) + ), potassium ions (K) + ), rubidium ions (Rb + ), cesium ions (Cs) + At least one of the following. Further, the organic amine ion includes a methylamine group (CH3NH3). + MA + ), dimethyl diammonium ion (MDA) 2+ ), phenylethylammonium ion (PEA) + ), oleyl ammonium ion (OA) + ( ), at least one of ethylamino, propylamino, butylamino, pentamino, and hexamino.

[0138] Optionally, the B ion includes Pb. 2+ Sn 2+ Be 2+ Mg 2+ Ca 2+ 、Sr 2+ Ba 2+ Zn 2+ 、Ge 2+ Fe 2+ Co 2+ Cu 2+ and Ni 2+ At least one of them; more preferably, the B ion includes Pb. 2+ and Sn 2+ One or two of them.

[0139] Optionally, the C ions include Cs + Ag + K + and Ru + At least one of them.

[0140] Optionally, the D ion includes Bi. 3+ Ni 3+ Fe 3+ and Cu 3+ At least one of them;

[0141] Optionally, X ions include fluoride ions (F... - ), chloride ions (Cl) - ), bromide ions (Br) - ), iodide ions (I) - ), thiocyanate ion (SCN) - At least one of the following; optionally, the X ion includes Cl... - ,Br - and I - At least one of them.

[0142] It is understandable that the perovskite material in the aforementioned perovskite light-absorbing layer can be selected from Cs. x1 FA 1-x1 PbX3, Cs x1 MA 1-x1 PbX3, Cs m FA n MA 1-m-n PbX3, CsPbX3, MAPbX3, FAPbX3, CsFAPbSnX3, Cs x1 FA 1-x1 Pb x2 Sn 1-x2 X3, Cs m FA n MA 1-m-n Pb x2 Sn 1-x2 X3, Cs Pb x2 Sn 1-x2 X3, MAPb x2 Sn 1-x2 X3 and FAPb x2 Sn 1-x2 At least one of X3, wherein 0 < x1 < 1, 0 < x2 < 1, 0 < m < 1, 0 < n < 1.

[0143] Furthermore, as an example, the perovskite material in the perovskite light-absorbing layer 130 described above can be selected from Cs. 0.5 FA 0.5 At least one of PbI3, CsPbI3, and FAPbI3.

[0144] In some examples, the preparation method of the above-mentioned perovskite light-absorbing layer includes the following steps: mixing material A, BX2 and solvent to obtain a perovskite precursor solution; then coating the perovskite precursor solution onto the corresponding substrate and annealing it to obtain the perovskite light-absorbing layer.

[0145] The first electrode layer 120 includes at least one of conductive metal oxides such as indium tin oxide (ITO), fluorine-doped tin oxide (FTO), aluminum-doped zinc oxide (AZO), and gallium-doped zinc oxide (GZO). Further, the resistivity of the first electrode layer 120 is 4–30 Ωcm.

[0146] Furthermore, in order to enable light to be effectively transmitted to the light-absorbing layer 130, the first electrode layer 120 in the solar cell 1 is configured as a transparent electrode layer, and the second electrode layer 140 is configured as a back electrode layer. Furthermore, the first electrode layer 120 and the substrate 110 are formed into a transparent conductive glass, such as ITO glass, FTO glass, AZO glass, or GZO glass.

[0147] The material of the second electrode layer 140 (i.e., the material of the back electrode layer) includes one or more of metallic materials, carbon materials, and conductive metal oxides. The metallic materials include one or more of gold, silver, titanium, copper, and aluminum; the carbon materials include one or more of carbon quantum dots, graphene, carbon nanotubes, carbon nanosheets, carbon fibers, and carbon black; and the conductive metal oxides include one or more of ITO, AZO, indium-doped tungsten oxide (IWO), and cerium-doped indium oxide (ICO). Furthermore, the second electrode layer 140 can also be a multilayer or hybrid back electrode layer formed by a combination of the above three types of materials. The preparation method of the second electrode layer 140 includes one of thermal evaporation, electron beam evaporation (EBD), sputtering, hot-wire chemical vapor deposition (HWCVD), atomic layer deposition (ALD), physical vapor deposition (PVD), active plasma deposition (RPD), doctor blading, and slot die coating.

[0148] Understandably, solar cells, in terms of structure, include formal and inverted structures.

[0149] For a formal structure, as a non-limiting example, the solar cell 1 includes a substrate 110 and a first electrode layer 120, a first transport layer 160 (electron transport layer), a light-absorbing layer 130, a second transport layer 170 (hole transport layer), and a second electrode layer 140 sequentially stacked on the substrate 110. The first electrode layer 120 is a transparent electrode layer, and the second electrode layer 140 is a back electrode layer.

[0150] For the inverted structure, as a non-limiting example, the solar cell 1 includes a substrate 110 and a first electrode layer 120, a first transport layer 160 (hole transport layer), a light-absorbing layer 130, a second transport layer 170 (electron transport layer), and a second electrode layer 140 sequentially stacked on the substrate 110. The first electrode layer 120 is a transparent electrode layer, and the second electrode layer 140 is a back electrode layer.

[0151] Optionally, the solar cell described above may also include an electron blocking layer between the electrode layer and the hole transport layer. The material of the electron blocking layer may be a known material.

[0152] Optionally, the solar cell described above may also include a hole-blocking layer between the electrode layer and the electron transport layer. The material of the hole-blocking layer may include, but is not limited to, BCP (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline) and tin oxide.

[0153] It is understandable that the interfaces between adjacent film layers of the aforementioned solar cells may or may not use an interface layer depending on the actual design.

[0154] It is understood that the above-mentioned solar cells can be prepared by sequentially forming stacked film layers on a substrate.

[0155] In some embodiments, the solar cell 1 further includes an internal busbar for drawing out the current of the solar cell 1 and connecting it to the positive and negative terminals of the solar cell 1.

[0156] In some embodiments, the solar cell 1 further includes an external current collector (not shown) and a junction box (not shown). The external current collector is connected to an internal current collector, and the junction box is connected to the external current collector for drawing the current from the solar cell 1 to the outside of the photovoltaic module. The arrangement of the junction box and the external current collector facilitates drawing the current from the solar cell 1 to the outside of the photovoltaic module, which can be used to drive a load or store electrical energy.

[0157] Please refer to Figures 5 to 8 and Figure 1. The second aspect of this application also provides a method for preparing the above-mentioned solar cell, including the following steps S11 to S16.

[0158] S11. A first trench P1 is provided on the first electrode layer 120 to divide the first electrode layer 120, as shown in Figure 5.

[0159] S12. A light-absorbing layer 130 and a first sub-electrode layer 143 are sequentially disposed on the first electrode layer 120 with the first groove P1. A first protective groove P12 is disposed on the light-absorbing layer 130 and the first sub-electrode layer 143, as shown in Figure 5.

[0160] S13. A protective layer 150 is formed in a portion of the first protective groove P12 and on the first sub-electrode layer 143 using a mask, as shown in Figure 6.

[0161] S14. A second trench P2 is formed in the obtained battery structure. The second trench P2 divides the protective layer 150, the first sub-electrode layer 143, and the light-absorbing layer 130 on the first sub-electrode layer 143. Thus, the protective layer formed in the first protective trench P12 is the first protective layer 151, and the remaining protective layer on the first sub-electrode layer 143 is the second protective layer 152. Please refer to Figure 7.

[0162] S15. A second sub-electrode layer 144 is formed on the obtained battery structure and in the second trench P2, as shown in FIG8. Thus, the first sub-electrode layer 143 and the second sub-electrode layer 144 on the first sub-electrode layer 143 constitute the main conductive part 141, and the second sub-electrode layer 144 in the second trench P2 constitutes the connecting conductive part 142.

[0163] S16. A third trench P3 is provided on the second electrode layer 140, which is composed of the first sub-electrode layer 143 and the second sub-electrode layer 144, and the third trench P3 divides the second electrode layer 140.

[0164] The above-described fabrication method allows for the formation of the protective layer in a single process, simplifying the process. Furthermore, the solar cells fabricated using this method exhibit the superior device stability described above. This fabrication method utilizes a photomask to form the protective layer, which, compared to etching methods, avoids damage to the functional layers of the cell caused by etching.

[0165] It should be noted that the materials of the first sub-electrode layer 143 and the second sub-electrode layer 144 can be the same or different. When the materials of the first sub-electrode layer 143 and the second sub-electrode layer 144 are the same, there is no obvious interface between the first sub-electrode layer 143 and the second sub-electrode layer 144, and the two form a uniform whole second electrode layer 140. In another embodiment, when the materials of the first sub-electrode layer 143 and the second sub-electrode layer 144 are the same, two layers with a clear interface are formed between the first sub-electrode layer 143 and the second sub-electrode layer 144.

[0166] The above preparation method is applicable to schemes where the positions of the first groove P1 and the first protective groove P12 are staggered or not staggered, such as the preparation of the structures shown in Figures 1 and 3.

[0167] Please refer to Figure 4. In some embodiments, for the structure in which the first trench P1 and the first protective trench P12 are not separated, that is, the method for fabricating a solar cell in which the first trench P1 and the first protective trench P12 are interconnected, the following steps S21 to S25 can also be used.

[0168] S21. A light-absorbing layer 130 and a first sub-electrode layer 143 are sequentially disposed on the first electrode layer 120. A first protective groove P12 is disposed on the light-absorbing layer 130 and the first sub-electrode layer 143, and a first trench P1 is disposed on the first electrode layer 120 below the first protective groove P12.

[0169] Unlike steps S11 to S16 described above, this preparation method does not require pre-forming the first trench P1 on the first electrode layer 120 before setting the light-absorbing layer 130 and the first sub-electrode layer 143. Furthermore, the first trench P1 can be formed in one step in the same process as the first protective trench P12.

[0170] S22. A protective layer 150 is formed in a portion of the first trench P1, the first protective trench P12, and the first sub-electrode layer 143 using a mask.

[0171] S23. A second trench P2 is formed in the obtained battery structure. The second trench P2 divides the protective layer, the first sub-electrode layer, and the light-absorbing layer 130 on the first sub-electrode layer 143. Thus, the protective layer formed in the first protective trench P12 is the first protective layer 151, and the remaining protective layer on the first sub-electrode layer is the second protective layer 152.

[0172] S24. A second sub-electrode layer 144 is formed on the obtained battery structure and within the second trench P2.

[0173] S25. A third trench P3 is provided on the second electrode layer 140, which is composed of the first sub-electrode layer 143 and the second sub-electrode layer 144, and the third trench P3 divides the second electrode layer 140.

[0174] The process of forming the first trench P1 and the first protective trench P12 directly through step S21 simplifies the process and forms the protective layer in one step. Furthermore, the first protective layer 151 is embedded in the first electrode layer 120, which can provide more comprehensive isolation and protection for the light-absorbing layer 130 and improve the structural stability of the first protective layer 151.

[0175] In some embodiments, when a second protective groove P14 is provided, the following step S122 may be performed before forming the protective layer 150 using a mask: a second protective groove P14 is provided on the light-absorbing layer 130 and the first sub-electrode layer 143, the second protective groove P14 being spaced apart from the first protective groove P12; correspondingly, a mask is used to expose the second protective groove P14, the first protective groove P12, the area between the two protective grooves, and the portion of the first sub-electrode layer 143 adjacent to the protective grooves, so as to form the protective layer 150 in the exposed area; a second trench P2 is located between the second protective groove P14 and the first protective groove P12.

[0176] It is understood that the first protective groove P12 and the second protective groove P14 can be formed in one process or in two processes sequentially, and the order in which they are formed is not restricted.

[0177] The above-mentioned preparation method and the structural characteristics of solar cells have been described above and will not be elaborated here.

[0178] The solar cell described above can be prepared using the method described, and the specific implementation method is not limited. Depending on the different film layers, methods such as spraying, sputtering, or vapor deposition can be selectively used, employing any means that are feasible to those skilled in the art.

[0179] Furthermore, vapor deposition methods include at least one of chemical vapor deposition, physical vapor deposition, and plasma vapor deposition. Chemical vapor deposition (CVD) is a method of generating a thin film by chemically reacting one or more gaseous compounds or elements containing thin film elements on the surface of a substrate 110, including thermal CVD, plasma-enhanced chemical vapor deposition (PCVD), and laser-enhanced chemical vapor deposition (LCVD). Physical vapor deposition (PVD) refers to a technique that uses physical methods under vacuum conditions to vaporize the surface of a material source (solid or liquid) into gaseous atoms or molecules, or partially ionize them into ions, and then deposits a thin film with a specific function on the substrate surface through a low-pressure gas (or plasma) process. This includes vacuum evaporation, sputtering deposition, arc plasma deposition, ion deposition, and molecular beam epitaxy.

[0180] According to one embodiment of this application, a photovoltaic module is also provided, which includes the solar cell described above.

[0181] The aforementioned solar cells have high light conversion efficiency and good stability, which can improve the efficiency of photovoltaic modules.

[0182] The aforementioned photovoltaic module includes one or more of the aforementioned solar cells, which can be selected according to specific application scenarios; further, the aforementioned photovoltaic module includes multiple of the aforementioned solar cells, which are connected in series or parallel to form a solar cell. Further, the aforementioned photovoltaic module may also include a tandem cell, which includes one or more of the aforementioned solar cells. The tandem cell includes, but is not limited to, crystalline silicon / perovskite tandem cells, all-perovskite tandem cells, and thin-film / perovskite tandem cells such as copper indium gallium selenide (CIGS).

[0183] In some embodiments, the photovoltaic module further includes a photovoltaic glass layer, an adhesive layer, and a backsheet.

[0184] The solar cell has an adhesive layer on each of its two surfaces. A backsheet is provided on the surface of one adhesive layer away from the solar cell, and a photovoltaic glass layer is provided on the surface of the other adhesive layer away from the solar cell.

[0185] The photovoltaic glass layer and backsheet are used to protect the solar cells, and they have the functions of sealing, insulation and waterproofing; the adhesive layer plays the role of bonding the photovoltaic glass layer to the solar cells and bonding the backsheet to the solar cells.

[0186] Optionally, the photovoltaic glass layer is made of tempered glass, the backsheet is made of TPT (polyvinyl fluoride) or TPE (thermoplastic elastomer), and the adhesive layer is made of EVA (polyethylene-polyvinyl acetate copolymer).

[0187] Furthermore, the aforementioned photovoltaic module also includes a junction box and an outer frame. Furthermore, the lead-out terminals of the aforementioned solar cell's busbar are connected to the junction box.

[0188] Junction boxes are used to protect the entire photovoltaic module's power generation system. They are essentially a current transfer station. When a cell short-circuits, the junction box will automatically disconnect the short-circuited cell string.

[0189] The outer frame serves to support and protect the entire photovoltaic module. The frame can be made of aluminum alloy, which has excellent strength and corrosion resistance.

[0190] Furthermore, silicone is used to bond and seal the connections between the frame and other parts of the photovoltaic module. The photovoltaic module can convert solar energy into electrical energy, which can then be stored in batteries or used to power loads.

[0191] In some embodiments, the photovoltaic module is a solar panel.

[0192] According to one embodiment of this application, a photovoltaic system is also provided, including the photovoltaic module described above.

[0193] The photovoltaic system utilizes the photovoltaic effect of the solar cells in the aforementioned photovoltaic modules to directly convert solar radiation energy into electrical energy with high efficiency; furthermore, the aforementioned photovoltaic system is a photovoltaic power generation system.

[0194] Photovoltaic modules are the core component of a photovoltaic power generation system. The aforementioned photovoltaic system includes one or more photovoltaic modules, which can be selected according to specific application scenarios. Furthermore, when the aforementioned photovoltaic system includes multiple photovoltaic modules, the multiple photovoltaic modules form a photovoltaic array.

[0195] The aforementioned photovoltaic system can be a stand-alone photovoltaic power generation system or a grid-connected photovoltaic power generation system.

[0196] An independent photovoltaic (PV) power generation system includes a PV array, battery bank, charge controller, power electronic converter (inverter), and load. Its working principle is that solar radiation energy is first converted into electrical energy by the PV array, then converted by the power electronic converter to supply power to the load. Simultaneously, excess electrical energy is stored as chemical energy in an energy storage device after passing through the charge controller. Thus, when sunlight is insufficient, the energy stored in the battery can be converted into 220V, 50Hz AC power by the power electronic inverter, filter, and power frequency transformer to supply AC loads.

[0197] A grid-connected photovoltaic (PV) power generation system includes a photovoltaic array, a high-frequency DC / DC boost circuit, a power electronic converter (inverter), and system monitoring. Its working principle is that solar radiation energy is converted by the photovoltaic array, then converted into high-voltage DC by a high-frequency DC converter, and finally inverted by the power electronic inverter to output a sinusoidal alternating current to the grid that is in phase with the grid voltage.

[0198] The two photovoltaic power generation systems mentioned above each have their own characteristics and can be selected according to the specific application scenario.

[0199] One embodiment of this application provides an electrical device, including the solar cell or the photovoltaic module described above.

[0200] In some of these embodiments, the solar cells or photovoltaic modules described above can be the power source of an electrical device or the energy storage unit of an electrical device.

[0201] Furthermore, the aforementioned electrical devices may include mobile devices, such as mobile phones, laptops, electric vehicles, electric trains, ships, and satellites, but are not limited to these.

[0202] Figure 9 shows an example of an electrical device. This electrical device 2 is a pure electric vehicle, a hybrid electric vehicle, or a plug-in hybrid electric vehicle, etc.

[0203] One embodiment of this application provides a power generation device, including the solar cell or the photovoltaic module described above.

[0204] To make the technical problems, technical solutions, and beneficial effects solved by this application clearer, the application will be further described in detail below with reference to embodiments and accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. The following description of at least one exemplary embodiment is merely illustrative and is in no way intended to limit this application or its applications. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0205] Where specific techniques or conditions are not specified in the examples, they shall be performed in accordance with the techniques or conditions described in the literature in this field or in accordance with the product instructions. Reagents or instruments whose manufacturers are not specified are all commercially available conventional products.

[0206] Example 1

[0207] The cross-sectional structure of the perovskite solar cell device is shown in Figure 1.

[0208] (1) The ITO conductive glass was ultrasonically cleaned for 15 minutes in sequence with glass cleaner, deionized water, ethanol and isopropanol to serve as a substrate 110 containing the first electrode layer 120.

[0209] (2) Scribing P1. The first groove P1 is formed by laser cutting the ITO layer in the ITO conductive glass, as shown in Figure 5. The width of the scribe line P1 is 50 μm.

[0210] (3) The preparation of the hole transport layer, perovskite layer, electron transport layer, hole blocking layer and first sub-electrode layer is shown in Figure 5.

[0211] Me-2PACz was used as the hole transport material and isopropanol was used as the solvent to form a Me-2PACz solution with a concentration of 0.6 mg / mL. ITO glass was placed on a spin coater, and 30 μL of the Me-2PACz solution was taken and spin-coated at 5000 rpm for 30 s. After spin-coating, it was heat-annealed at 100℃ for 10 min to obtain the hole transport layer as the first transport layer 160 with a thickness of about 1-2 nm.

[0212] A 1.4 mol / L FAPbI3 perovskite precursor solution was spin-coated onto the surface of the hole transport layer. The spin-coating parameters were: spin-coating at 1000 rpm for 20 s, then spin-coating at 4000 rpm for 35 s, and finally adding chlorobenzene antisolvent for 10 s. The mixture was then heat-annealed at 110 °C for 30 min to obtain the perovskite light-absorbing layer 130, with a thickness of 650 nm.

[0213] After cooling, a C60 layer (electron transport layer) with a thickness of 30 nm, a BCP (hole blocking layer) with a thickness of 5 nm are deposited on the surface of the perovskite light-absorbing layer as the second transport layer 170, and a Cu layer with a thickness of 60 nm is deposited as the first sub-electrode layer 143.

[0214] (4) Scribing of P12 and P14. As shown in Figure 5, P12 and P14 are scribed by laser cutting. The scribes of P12 and P14 penetrate the first sub-electrode layer 143, the second transport layer 170 (electron transport layer and hole blocking layer), the light-absorbing layer 130 (perovskite light-absorbing layer), and the first transport layer 160 (hole transport layer). The scribes of P12 and P14 are spaced apart, with P12 located between the scribes of P14 and P1. The width of both the scribes of P12 and P14 is 20 μm.

[0215] (5) Protective layer preparation. As shown in Figure 6, a mask is used to expose the scribe lines P12 and P14, the area between P12 and P14, and the area adjacent to P12 and P14. A protective layer 150 is formed within the scribe lines P12 and P14, the area between P12 and P14, and the area adjacent to P12 and P14 by vapor deposition or sputtering. The thickness H of the protective layer 150 above the first sub-electrode layer 143, the width W1 of the protective layer 150 above the first sub-electrode layer 143 in the first direction X, and the material of the protective layer are shown in Table 1.

[0216] (6) P2 scribing. As shown in Figure 7, P2 scribing is performed by laser cutting. P2 scribing is located between P12 and P14 scribing and penetrates the protective layer 150, the first sub-electrode layer 143, the second transport layer 170 (electron transport layer and hole blocking layer), the light-absorbing layer 130 (perovskite light-absorbing layer) and the first transport layer 160 (hole transport layer); the width of P2 scribing is 50 μm.

[0217] (7) Fabrication of the second sub-electrode layer. As shown in Figure 8, copper with a thickness of 50 nm is deposited on the first sub-electrode layer 143 after the line is drawn in step (6) P2 to serve as the second sub-electrode layer 144.

[0218] (8) P3 scribing. After the vapor deposition is completed, P3 scribing is performed. P3 scribing is located between P2 and P14. P3 scribing penetrates the second sub-electrode layer 144, the protective layer 150 on the first sub-electrode layer 143, the first sub-electrode layer 143, the second transport layer 170 (electron transport layer and hole blocking layer), the light-absorbing layer 130 (perovskite light-absorbing layer), and the first transport layer 160 (hole transport layer), as shown in Figure 1. The width of P3 scribing is 20 μm.

[0219] The protective layer 150 above the first sub-electrode layer 143 is divided into a second protective layer 152 and a fourth protective layer 154 by lines P2 and P3. The second protective layer 152 and the fourth protective layer 154 have the same thickness. The width L1 of the second protective layer 152 in the first direction X and the width L2 of the fourth protective layer 154 are the same. The sum of the widths of lines P2 and P3 in the first direction X is L3 (i.e., the distance between the second protective layer 152 and the fourth protective layer 154 in the first direction X). Therefore, W1 = L1 + L2 + L3. The width W2 of a single sub-cell in the first direction X is 6000 micrometers.

[0220] (9) Packaging to complete the fabrication of perovskite solar cell devices.

[0221] Example 2

[0222] The process is basically the same as in Example 1, except that the structure of the P12 scribe line is different in step (4). Specifically, the P12 scribe line runs through the first sub-electrode layer 143, the second transport layer 170 (electron transport layer and hole blocking layer), the light-absorbing layer 130 (perovskite light-absorbing layer), the first transport layer 160 (hole transport layer), and the first electrode layer 120 (ITO layer); the cross-sectional structure of the resulting perovskite solar cell device is shown in Figure 3.

[0223] Example 3

[0224] The process is basically the same as in Example 1, except that the step of scribing line P1 in step (2) is omitted, and the structure of scribing line P12 in step (4) is different; and the material of the protective layer is different. Specifically, the scribing line P12 penetrates the first sub-electrode layer 143, the second transport layer 170 (electron transport layer and hole blocking layer), the light-absorbing layer 130 (perovskite light-absorbing layer), the first transport layer 160 (hole transport layer), and the first electrode layer 120 (ITO layer); the cross-sectional structure of the perovskite solar cell device is shown in Figure 4.

[0225] Examples 4-22

[0226] The invention is basically the same as that in Embodiment 1, except that at least one parameter of the protective layer 150 above the first sub-electrode layer 143, the protective layer 150 in the first direction X, and the material of the protective layer is different, as shown in Table 1.

[0227] Comparative Example 1

[0228] The process is essentially the same as in Example 1, except that P12 and P14 scribing was not performed and a protective layer was not formed, and a 110 nm thick copper electrode layer was formed using a one-step deposition method. The specific steps are as follows:

[0229] (1) Clean the ITO conductive glass sequentially with glass cleaner, deionized water, ethanol and isopropanol ultrasonically for 15 min.

[0230] (2) Scribing P1. The first groove P1 is formed by cutting the ITO layer in the ITO conductive glass using laser cutting. The width of the scribe line P1 is 50 μm.

[0231] (3) Preparation of hole transport layer, perovskite layer, electron transport layer and hole blocking layer.

[0232] Me-2PACz was used as the hole transport material and isopropanol was used as the solvent to form a Me-2PACz solution with a concentration of 0.6 mg / mL. ITO glass was placed on a spin coater, and 30 μL of Me-2PACz solution was taken and spin-coated at 5000 rpm for 30 s. After spin-coating, the solution was heat-annealed at 100℃ for 10 min to obtain the hole transport layer.

[0233] A 1.4 mol / L FAPbI3 perovskite solution was spin-coated onto the surface of the hole transport layer. The spin-coating parameters were: spin-coating at 1000 rpm for 20 s, then spin-coating at 4000 rpm for 35 s, and finally adding chlorobenzene antisolvent in the last 10 s. The mixture was then heat-annealed at 110 °C for 30 min to obtain the perovskite light-absorbing layer.

[0234] After cooling, a 30 nm thick C60 layer (electron transport layer) and a 5 nm thick BCP (hole blocking layer) are deposited on the surface of the perovskite light-absorbing layer.

[0235] (4) P2 scribing. P2 scribing is performed by laser cutting. The P2 scribing penetrates the electron transport layer, the perovskite light-absorbing layer and the hole transport layer; the width of the P2 scribing is 50 μm.

[0236] (5) Preparation of the second electrode layer. A copper electrode layer with a thickness of 110 nm is deposited on the first sub-electrode layer after the line is drawn in step (4) P2.

[0237] (8) P3 scribing. After the vapor deposition is completed, P3 scribing is performed. P2 scribing is located between P1 and P3. P3 scribing penetrates the copper electrode layer, electron transport layer, tungsten ore light-absorbing layer and hole transport layer. The width of P3 scribing is 20 μm.

[0238] (9) Packaging to complete the fabrication of perovskite solar cell devices.

[0239] Comparative Example 2

[0240] The process is basically the same as in Example 1, except that in step (3), the first sub-electrode layer 143 is not formed on the second transport layer 170. In the subsequent step (5), the protective layer 150 is formed on the entire area of ​​the second transport layer 170; correspondingly, in step (7), copper with a thickness of 110 nm is deposited on the second transport layer 170 after the line is drawn in step (6) P2 as the second electrode layer 140; and the material and thickness of the protective layer are shown in Table 1.

[0241] Comparative Example 3

[0242] The process is basically the same as in Example 19, except that in step (3), the first sub-electrode layer 143 is not formed on the second transmission layer 170; accordingly, the thickness of the second sub-electrode layer 144 is adjusted to the sum of the thicknesses of the first sub-electrode layer 143 and the second sub-electrode layer 144 in Example 1, so that the protective layer is disposed between the second transmission layer and the second electrode layer.

[0243] Comparative Example 4

[0244] The process is basically the same as in Example 20, except that in step (3), the first sub-electrode layer 143 is not formed on the second transmission layer 170; accordingly, the thickness of the second sub-electrode layer 144 is adjusted to the sum of the thicknesses of the first sub-electrode layer 143 and the second sub-electrode layer 144 in Example 1, so that the protective layer is disposed between the second transmission layer and the second electrode layer.

[0245] The following are performance tests.

[0246] (1) IV Test: An AAA-grade solar simulator was used as the light source, and a high-precision source meter was used as the testing equipment. The voltage scan range was from -0.5V to 48V, and the data acquisition delay was 20ms. Current and voltage data were collected, and the program plotted the voltage as the horizontal axis and the current as the vertical axis to form an IV curve. The horizontal intercept was the open-circuit voltage Voc, and the vertical intercept was the short-circuit current Jsc. The product of I and V on the IV curve was the power under the corresponding load. The ratio of the maximum power to the solar simulator irradiance was the efficiency PCE. Multiple data points under the same experimental conditions were averaged. The obtained PCE is shown in Table 1.

[0247] (2) Aging performance test:

[0248] The equipment was placed in an aging chamber with the temperature controlled at 85℃ and continuously illuminated using an AAA-grade solar simulator. The PCE was tested according to the IV test described above, and the aging time corresponding to when the PCE reached 80% of the initial PCE was recorded. The initial PCE and aging time are shown in Table 1.

[0249] Table 1

[0250] Comparative Example 1 had no protective layer. Its initial PCE was acceptable, but its aging time was very short, indicating that its photoelectric performance stability was poor.

[0251] Comparative Example 2 did not have a first sub-electrode layer and the entire protective layer was set. The protective layer was made of aluminum oxide. Although it played a protective role, the PCE performance was very low due to the insulating properties of aluminum oxide.

[0252] Comparative Examples 3 and 4, which did not have a first sub-electrode layer, showed lower initial PCE and aging time compared to Examples 19 and 20, indicating a decrease in both PEC performance and photoelectric performance stability. A comparison of Comparative Examples 3 and 4 shows that as the thickness of the insulating protective layer increases, the sub-cell "dead zone" increases, the series resistance increases, and the transmission deteriorates, resulting in a decrease in the PCE performance of the solar device.

[0253] The protective layer provided in this application improves the PEC performance and photoelectric performance stability of solar devices in each embodiment.

[0254] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0255] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the invention patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims

A solar cell includes a first electrode layer, a light absorbing layer, and a second electrode layer stacked together; The solar cell is provided with a first groove, a second groove, and a third groove, the first groove is provided in the first electrode layer and divides the first electrode layer along a thickness direction of the solar cell, the second groove divides the light absorbing layer and part of the second electrode layer along the thickness direction of the solar cell and exposes the first electrode layer, and the third groove divides the second electrode layer along the thickness direction of the solar cell; The second electrode layer includes a main conductive part provided on a side of the light absorbing layer away from the first electrode layer and a connecting conductive part provided in the second groove, the main conductive part and the connecting conductive part are connected, and the connecting conductive part is connected with the first electrode layer; The solar cell further includes a first protection groove that divides the light absorbing layer and part of the second electrode layer along the thickness direction of the solar cell, the second groove is located between the first protection groove and the third groove; the solar cell further includes a first protection layer and a second protection layer; the first protection layer is filled in the first protection groove and separates the light absorbing layer and the connecting conductive part along a first direction, the second protection layer is at least wrapped by the main conductive part along two sides in the thickness direction of the solar cell and is connected with the first protection layer, a projection of the second protection layer on the first electrode layer along the thickness direction of the solar cell is smaller than a projection of the light absorbing layer on the first electrode layer along the thickness direction of the solar cell; and the first direction intersects the thickness direction of the solar cell. The solar cell according to claim 1, wherein The solar cell is provided with a second protection groove that divides the light absorbing layer and part of the second electrode layer along the thickness direction of the solar cell, the second protection groove and the first protection groove are respectively located on two sides of the second groove along a first direction; The solar cell further includes a third protection layer and a fourth protection layer, the third protection layer is provided in the second protection groove and separates the light absorbing layer and the connecting conductive part in the second groove along a first direction, the fourth protection layer is at least wrapped by the main conductive part along a side close to the light absorbing layer in the thickness direction of the solar cell and is connected with the third protection layer, a projection of the fourth protection layer on the first electrode layer along the thickness direction of the solar cell is smaller than a projection of the light absorbing layer on the first electrode layer along the thickness direction of the solar cell. The solar cell according to claim 2, wherein The third groove separates the connecting conductive part and the third protection layer along a first direction; Alternatively, the third groove divides the main conductive part on the fourth protection layer along the thickness direction of the solar cell. The solar cell according to claim 2, wherein The span of the second protective layer and the fourth protective layer in the first direction is denoted as W1, the width of the second protective layer and the fourth protective layer in the first direction is denoted as L1 and L2 respectively, the spacing between the second protective layer and the fourth protective layer in the first direction is denoted as L3, W1=L1+L2+L3, the width of the sub-cells divided by the solar cell in the first direction is W2, Wherein, W1 / W2≤80%. The solar cell according to claim 4, wherein W1 / W2 is 2.5% to 50%, which can be selected as 5% to 40%. The solar cell according to claim 4, wherein W1=150μm to 3000μm, which can be selected as 150μm to 700μm. The solar cell according to any one of claims 2 to 6, wherein The thickness of the second protective layer and the fourth protective layer is independently 5nm to 200nm, which can be selected as 10nm to 80nm. The solar cell according to any one of claims 2 to 7, wherein The width of the first protective groove and the second protective groove is independently 15μm to 100μm. The solar cell according to any one of claims 1 to 8, wherein The first groove and the first protective groove are staggered with each other. The solar cell according to claim 9, wherein The second protective groove exposes the first electrode layer, and the first protective layer is arranged on the first electrode layer in the first protective groove. The solar cell according to claim 9, wherein The first protective layer is embedded in the first electrode layer. The solar cell according to any one of claims 2 to 11, wherein The material of the first protective layer, the second protective layer, the third protective layer and the fourth protective layer independently includes at least one of conductive material and insulating material. The solar cell according to claim 12, wherein The material of the first protective layer, the second protective layer, the third protective layer and the fourth protective layer independently includes one or more of aluminum oxide, cerium oxide, zirconium oxide, titanium oxide, tin oxide, FTO, ITO, AZO, ATO, IGO, BZO and Cr. The solar cell according to any one of claims 1 to 8, wherein The first groove and the first protective groove are communicated with each other, the first protective layer is further embedded in the first groove and separates the first electrode layer, and the material of the first protective layer is insulating material. The solar cell according to any one of claims 2 to 8, wherein In the thickness direction of the solar cell, the main body conductive part includes a first layer of sub-electrode layer and a second layer of sub-electrode layer arranged in layers, the first layer of sub-electrode layer is located between the light-absorbing layer and the second layer of sub-electrode layer in the thickness direction of the solar cell, and the second protective layer and / or the fourth protective layer is located on the first layer of sub-electrode layer and is partially covered by the second layer of sub-electrode layer in the thickness direction of the solar cell. The solar cell according to any one of claims 1 to 15, wherein The solar cell satisfies one or more of the following conditions: (1) The light-absorbing layer is a perovskite light-absorbing layer; (2) The solar cell further includes a first transport layer and a second transport layer, wherein the first transport layer is located between the first electrode layer and the light-absorbing layer, the second transport layer is located between the light-absorbing layer and the third electrode layer, the first transport layer is one of an electron transport layer and a hole transport layer, and the second transport layer is the other of the electron transport layer and the hole transport layer. A preparation method of a solar cell includes the following steps: A first groove for dividing the first electrode layer is arranged on the first electrode layer; forming a first trench on the first electrode layer, and forming a first protective trench on the light-absorbing layer and the first layer of sub-electrode layer; forming a protective layer on the first protective trench and on a part of the first layer of sub-electrode layer; forming a second trench on the obtained battery structure, the second trench dividing the protective layer on the first layer of sub-electrode layer, the first layer of sub-electrode layer and the light-absorbing layer; forming a second layer of sub-electrode layer on the obtained battery structure and in the second trench; forming a third trench on the second electrode layer formed by the first layer of sub-electrode layer and the second layer of sub-electrode layer, the third trench dividing the second electrode layer. The method of producing a solar cell according to claim 17, wherein Before forming the protective layer, further comprising the following steps: forming a second protective trench on the light-absorbing layer and the first layer of sub-electrode layer, the second protective trench being spaced apart from the first protective trench; correspondingly, exposing the second protective trench, the first protective trench, the region between the two protective trenches and the part of the first layer of sub-electrode layer adjacent to the protective trenches, so as to form the protective layer on the exposed region; the second trench is located between the second protective trench and the first protective trench. The method of producing a solar cell according to claim 17 or 18, wherein the first trench and the first protective trench are staggered or not staggered with each other. A method for preparing a solar cell, comprising the following steps: forming a light-absorbing layer and a first layer of sub-electrode layer on a first electrode layer, forming a first protective trench on the light-absorbing layer and the first layer of sub-electrode layer, and forming a first trench on the first electrode layer below the first protective trench; forming a protective layer on the first trench, in the first protective trench and on a part of the first layer of sub-electrode layer; forming a second trench on the obtained battery structure, the second trench dividing the protective layer on the first layer of sub-electrode layer, the first layer of sub-electrode layer and the light-absorbing layer; forming a second layer of sub-electrode layer on the obtained battery structure and in the second trench; forming a third trench on the second electrode layer formed by the first layer of sub-electrode layer and the second layer of sub-electrode layer, the third trench dividing the second electrode layer. A photovoltaic module comprising the solar cell according to any one of claims 1 to 16 or prepared by the method according to any one of claims 17 to 20. An electrical device comprising at least one selected from the solar cell according to any one of claims 1 to 16, the solar cell prepared by the method according to any one of claims 17 to 20 and the photovoltaic module according to claim 21. A power generation device comprising at least one selected from the solar cell according to any one of claims 1 to 16, the solar cell prepared by the method according to any one of claims 17 to 20 and the photovoltaic module according to claim 21.

Citation Information

Patent Citations

  • Perovskite solar battery pack, preparation method thereof and photovoltaic module

    CN114023889A

  • Manufacturing method of perovskite solar cell and perovskite solar cell

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  • Perovskite solar cell with protective layer and preparation method thereof

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  • Perovskite type solar battery module

    JP2016143708A