Laser, manufacturing method for laser, and laser projection light source

Abstract

A laser, a manufacturing method for the laser, and a laser projection device. The laser comprises: a base plate (100), a frame body (900), a plurality of thermally conductive portions (200), and a plurality of light-emitting chips (300), wherein the base plate (100) is provided with at least one first mounting groove (101); the frame body (900) is arranged on the base plate (100) and encloses an accommodating space with the base plate (100); the plurality of thermally conductive portions (200) are mounted in the at least one first mounting groove (101); and the plurality of light-emitting chips (300) are mounted on the surface of the thermally conductive portions (200) facing away from the base plate (100). The first mounting groove (101) comprises a first surface and a plurality of second surfaces; the thermally conductive portions (200) are connected to the first surface and the second surfaces of the first mounting groove (101). The first surface is parallel to the surface of the light-emitting chips (300) close to the base plate (100), and the distance between the first surface and the surface of the base plate (100) facing away from the light-emitting chips (300) is less than the height of the base plate (100) in a first direction. The plurality of thermally conductive portions (200) being mounted in the first mounting groove (101) of the base plate (100) can improve manufacturing efficiency, enhance reliability, and shorten the heat-transfer path, thereby reducing heat-transfer thermal resistance, improving heat dissipation efficiency.

Description

Laser, method for manufacturing laser, and laser projection light source

[0001] The present application claims priority to the Chinese patent application No. 202410993831.7, filed on July 23, 2024, and entitled "Laser and method for manufacturing laser", the entire content of which is incorporated herein by reference. TECHNICAL FIELD

[0002] Embodiments of the present application relate to laser projection technology. In particular, embodiments of the present application relate to a laser, a method for manufacturing a laser, and a laser projection light source. BACKGROUND

[0003] High-power visible light lasers are considered as ideal projection and display light sources due to their long service life, high brightness, wide color gamut, and other advantages, and are further widely used in head-up display, car headlights, VR / AR, and other fields. With the development of the laser display industry, miniaturization has become a mainstream trend. When a high-power semiconductor laser is working, a large amount of heat is generated in the active region of the light-emitting chip. If the heat cannot be dissipated in time, the high temperature caused by the accumulation of heat will reduce the output performance, and even affect the service life of the device, causing failure. SUMMARY

[0004] Embodiments of the present application provide a laser, a method for manufacturing a laser, and a laser projection light source, which can shorten the heat transfer path, reduce the heat transfer thermal resistance, and improve the heat dissipation efficiency. The technical solution is as follows:

[0005] In a first aspect, embodiments of the present application provide a laser, comprising: a bottom plate, a frame, a light-transmitting component, a plurality of heat-conducting parts, and a plurality of light-emitting chips.

[0006] The bottom plate has at least one first mounting groove on one side thereof;

[0007] The frame is fixedly connected to the bottom plate, and the at least one first mounting groove is located in an area enclosed by the frame;

[0008] The plurality of heat-conducting parts are mounted in the at least one first mounting groove;

[0009] The plurality of light-emitting chips correspond to the plurality of heat-conducting parts, and the light-emitting chips are mounted on the surfaces of the corresponding heat-conducting parts away from the bottom plate;

[0010] The light-transmitting component is mounted on the side of the frame away from the bottom plate.

[0011] In a second aspect, embodiments of the present application further provide a method for manufacturing a laser, comprising:

[0012] providing a bottom plate, and forming at least one first mounting groove on the bottom plate;

[0013] a frame body is provided, which is fixedly connected with the bottom plate, and the at least one first mounting slot is located in an area surrounded by the frame body;

[0014] a plurality of heat-conducting parts are deposited in the first mounting slot;

[0015] a plurality of light-emitting chips are provided, which correspond to the plurality of heat-conducting parts, and the light-emitting chips are mounted on the surfaces of the corresponding heat-conducting parts away from the bottom plate;

[0016] a light-transmitting part is provided, which is mounted on the side of the frame body away from the bottom plate.

[0017] In a third aspect, the present application provides a laser projection light source, which comprises a laser and a shell, and the laser is any of the above lasers. BRIEF DESCRIPTION OF DRAWINGS

[0018] In order to more clearly illustrate the embodiments of the present application or the implementation manners in the related art, the drawings needed to be used in the embodiments or related art description will be briefly introduced. Obviously, the drawings in the following description are some embodiments of the present application, and other drawings can also be obtained by those skilled in the art according to these drawings.

[0019] FIG. 1 is a structural schematic diagram of a laser provided by the prior art;

[0020] FIG. 2 is a partial structural schematic diagram of a laser provided by the prior art;

[0021] FIG. 3 is a schematic diagram of a light-emitting chip heat dissipation path length of a laser provided by the prior art;

[0022] FIG. 4 is a partial structural schematic diagram of a laser provided by some embodiments of the present application;

[0023] FIG. 5 is a schematic diagram of a light-emitting chip heat dissipation path of a laser provided by some embodiments of the present application;

[0024] FIG. 6 is a schematic diagram of one structure of a first mounting slot of a laser provided by some embodiments of the present application;

[0025] FIG. 7 is a schematic diagram of another structure of a first mounting slot of a laser provided by some embodiments of the present application;

[0026] FIG. 8 is a schematic diagram of one mounting form of a heat-conducting part of a laser provided by some embodiments of the present application;

[0027] FIG. 9 is a schematic diagram of another mounting form of a heat-conducting part of a laser provided by some embodiments of the present application;

[0028] FIG. 10 is a schematic structural diagram of a laser using a common prism according to some embodiments of the present application;

[0029] FIG. 11 is a schematic structural diagram of a reflection structure of a laser according to some embodiments of the present application;

[0030] FIG. 12 is a schematic diagram of a laser using a reflection structure according to some embodiments of the present application;

[0031] FIG. 13 is a schematic structural diagram of a connecting layer of a laser according to some embodiments of the present application;

[0032] FIG. 14 is a schematic structural diagram of a second mounting groove of a laser according to some embodiments of the present application;

[0033] FIG. 15 is a schematic structural diagram of an insulating layer of a laser according to some embodiments of the present application;

[0034] FIG. 16 is a schematic structural diagram of a laser according to some embodiments of the present application. DETAILED DESCRIPTION

[0035] In the related art, the heat of the light-emitting chip of the high-power semiconductor laser is mainly dissipated by a heat sink, which includes a primary heat sink and a secondary heat sink. The existing primary heat sink is usually made of aluminum nitride and silicon carbide, and the secondary heat sink, i.e., the tube shell, is usually made of copper and tungsten copper, etc. However, the existing primary heat sink and secondary heat sink are directly welded, the heat transfer path is long, the heat transfer thermal resistance is large, and the heat dissipation effect is not good.

[0036] Therefore, the present embodiments provide a laser, which includes a bottom plate, a frame, a plurality of heat-conducting parts, and a plurality of light-emitting chips. The bottom plate is provided with at least one first mounting groove. The frame is arranged on the bottom plate and encloses a containing space with the bottom plate. The plurality of heat-conducting parts are arranged in the at least one first mounting groove. The plurality of light-emitting chips are arranged on the surface of each heat-conducting part away from the bottom plate. The first mounting groove includes a first surface and a plurality of second surfaces. The heat-conducting part is connected to the first surface and the second surface of the first mounting groove. The first surface is parallel to the surface of the light-emitting chip close to the bottom plate. The distance between the surface of the bottom plate away from the light-emitting chip and the first surface is less than the height of the bottom plate in the first direction. The first direction is the vertical connecting direction of the bottom plate and the heat-conducting part. The second surface is perpendicular to the first surface. The laser further includes a light-transmitting part arranged on the side of the frame away from the bottom plate. The light beam emitted by the light-emitting chip is emitted through the light-transmitting part. By arranging the plurality of heat-conducting parts in the first mounting groove of the bottom plate, the manufacturing efficiency and reliability can be improved, the heat transfer path is shortened, the heat transfer thermal resistance is reduced, and the heat dissipation efficiency is improved.

[0037] In order to make the purposes, implementations and advantages of the present application clearer, the following will be a clear and complete description of the exemplary embodiments of the present application in conjunction with the accompanying drawings of the exemplary embodiments of the present application. Obviously, the described exemplary embodiments are only a part of the embodiments of the present application, but not all the embodiments.

[0038] It should be noted that the brief description of the terms in the present application is only for the convenience of understanding the subsequently described embodiments, and is not intended to limit the embodiments of the present application. Unless otherwise specified, these terms should be understood according to their ordinary and general meanings.

[0039] In addition, the terms "comprise" and "have" and any variations thereof are intended to cover but not exclusive inclusion, for example, a product or device comprising a series of components does not have to be limited to the clearly listed components, but can include other components that are not clearly listed or inherent to these products or devices.

[0040] In the description of the present application, it should be understood that the terms "center", "upper", "lower", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the indicated device or element must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the present application.

[0041] The terms "first", "second" are only for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined with "first", "second" can explicitly or implicitly include one or more of the features. In the description of the present application, unless otherwise specified, the meaning of "a plurality of" is two or more.

[0042] In the description of the present application, it should be noted that unless otherwise specified and limited, the terms "mounting", "connecting", "connection" should be understood broadly, for example, it can be fixedly connected, or detachably connected, or integrally connected; it can be mechanically connected, or electrically connected; it can be directly connected, or indirectly connected through an intermediate medium, or it can be the communication inside two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0043] With reference to the drawings of the embodiments of the present application, the technical solutions in the embodiments of the present application will be clearly and completely described. Obviously, the described embodiments are only a part of the embodiments of the present application, but not all the embodiments of the present application. Based on the embodiments of the present application, all the other embodiments obtained by those skilled in the art without creative work belong to the scope of protection of the present application.

[0044] Please refer to FIG. 1-3, the prior art laser includes a bottom plate 100, a heat conduction part 200 and a light emitting chip 300, the light emitting chip 300 is installed on the surface of the heat conduction part 200, the heat conduction part 200 is welded on the surface of the bottom plate 100, and the length of the heat transfer path of the light emitting chip 300 is h1+h2+h3.

[0045] Generally, the heat source of the high-power laser comes from the light emitting chip 300, and the heat generated by the light emitting chip 300 when working is transmitted to the environment through the heat conduction part 200 and the bottom plate 100 in turn. The temperature of the active region of the laser is represented by T j , the temperature of the environment is represented by T e , the heat transfer thermal resistance between the light emitting chip 300 and the environment is represented by R th , the input current is represented by I0, the input voltage is represented by U0, and the output power is represented by P output , then T j is represented as

[0046] T j = T e + R th (T0U0-P output )

[0047] From the calculation formula of T j , it can be concluded that, in the case of a certain light emitting power, there are mainly two ways to reduce the temperature of the light emitting chip 300, one is to reduce the temperature of the environment T e , and to increase the heat dissipation heat flow density by increasing the temperature difference, for example, by using liquid nitrogen and the like, but the temperature is too low, which may cause the laser surface to dew, and is easy to cause short circuit and burn the laser; the other is to reduce the heat transfer thermal resistance R th , the heat transfer thermal resistance R th is represented as

[0048] Wherein, h represents the material thickness / heat transfer path, S represents the heat conduction area in the vertical heat flow direction, and K represents the material thermal conductivity. In the case of the heat conduction area S in the vertical heat flow direction being unchanged, the device thermal resistance can be reduced by reducing the heat transfer path h or increasing the material thermal conductivity K, so as to reduce the temperature of the active region of the light emitting chip 300.

[0049] Please refer to FIG. 4-7 and FIG. 16, the embodiment of the application provides a laser, comprising: a bottom plate 100, a frame 900, a plurality of heat-conducting parts 200, a plurality of light-emitting chips 300 and a light-transmitting component A, the bottom plate 100 has at least one first mounting groove 101 on one side, the frame 900 is fixedly connected with the bottom plate 100 to form an accommodating space, and the at least one first mounting groove 101 is located in the area surrounded by the frame 900. The plurality of heat-conducting parts 200 are installed in the at least one first mounting groove 101, the plurality of light-emitting chips 300 correspond to the plurality of heat-conducting parts 200, the light-emitting chip 300 is installed on the surface of the corresponding heat-conducting part 200 away from the bottom plate 100, the light-transmitting component A is installed on the side of the frame 900 away from the bottom plate 100, and the light beam emitted by the light-emitting chip 300 is emitted through the light-transmitting component.

[0050] In some embodiments of the application, the surface of the bottom plate 100 facing the light-emitting chip 300 can be provided with the first mounting groove 101, and the heat-conducting part 200 can be fixedly installed in the first mounting groove 101.

[0051] In some embodiments of the application, the first mounting groove 101 can include a first surface and a plurality of second surfaces, and the heat-conducting part 200 is connected to the first surface and the second surface of the first mounting groove 101. The first surface is parallel to the surface of the light-emitting chip 300 facing the bottom plate 100, and the distance between the surface of the bottom plate 100 away from the light-emitting chip 300 and the first surface is less than the height of the bottom plate 100 in the first direction. The first direction is the vertical connection direction of the bottom plate 100 and the heat-conducting part 200, and the second surface is perpendicular to the first surface.

[0052] In some embodiments of the application, the first surface of the first mounting groove 101 can be the bottom surface of the first recess, and the second surface of the first mounting groove 101 can be the wall surface of the first recess.

[0053] In some embodiments of the application, the first mounting groove 101 can be a rectangular first recess, the first surface of the first mounting groove 101 can be a rectangular bottom surface of the first recess, and the plurality of second surfaces of the first mounting groove 101 can be four wall surfaces of the rectangular first recess.

[0054] Please refer to FIG. 6-7, in some embodiments of the application, the number of first mounting grooves 101 can correspond to the number of light-emitting chips 300 one by one, or the number of first mounting grooves 101 can be two. For example, the first mounting groove 101 can be a rectangular first recess, and 6*2, a total of 12 light-emitting chips 300 are attached as an example. According to the size of the heat-conducting part 200, 12 small grooves can be dug one by one, or two long strip-shaped first recesses, preferably two long strip-shaped first recesses. Specifically, the first mounting groove 101 is made on the bottom plate 100 by machining or stamping.

[0055] In some possible embodiments, the plurality of light emitting chips 300 are arranged in two rows, and the two rows of light emitting chips 300 are a row of first type light emitting chips 300a and a row of second type light emitting chips 300b respectively. The first mounting slots 101 corresponding to the two rows of light emitting chips 300 include the following two setting conditions:

[0056] The first condition is shown in FIG. 6. The first mounting slots 101 corresponding to the first type light emitting chips 300a are separately arranged, and the first mounting slots 101 corresponding to the second type light emitting chips 300b are separately arranged. In this way, the number of the first mounting slots 101 can be the same as the number of the light emitting chips 300.

[0057] The second condition is shown in FIG. 7. The first mounting slots 101 corresponding to the first type light emitting chips 300a are communicatively arranged, and the first mounting slots 101 corresponding to the second type light emitting chips 300b are communicatively arranged. In this way, the number of the first mounting slots 101 can be the same as the number of the rows of the light emitting chips 300.

[0058] By arranging the first mounting slots 101 on the bottom plate 100 and fixing the heat conduction part 200 in the first mounting slots 101, the length of the heat transfer path of the light emitting chip 300 is less than the sum of the maximum thickness of the bottom plate 100 and the thickness of the heat conduction part 200, the length of the heat transfer path of the light emitting chip 300 is reduced, and thus the heat transfer thermal resistance is reduced and the heat dissipation efficiency is improved. Here, the heat transfer path of the light emitting chip 300 can be the distance between the surface of the light emitting chip 300 facing the heat conduction part 200 and the surface of the bottom plate 100 away from the heat conduction part 200 in the direction perpendicular to the bottom plate 100.

[0059] In some possible embodiments, the bottom plate 100 includes a bottom plate body 100a and a support boss 100b arranged on the bottom plate body 100a, and the side of the support boss 100b away from the bottom plate body 100a has at least one first mounting slot 101. The frame 900 is distributed around the support boss 100b, and the frame 900 is connected to the bottom plate body 100a. In this case, the maximum thickness of the bottom plate 100 can be the sum of the thicknesses of the bottom plate body 100a and the support boss 100b in the region where the first mounting slot 101 is not arranged.

[0060] In this way, the bottom plate 100 has sufficient strength to support other structures in the laser.

[0061] Generally, the heat of the laser is mainly dissipated by the heat sink, including a primary heat sink (i.e., the heat conducting part 200) and a secondary heat sink (i.e., the bottom plate 100). The existing heat conducting part 200 is usually made of materials such as aluminum nitride and silicon carbide, and the existing bottom plate 100 is usually made of copper and tungsten copper, which are copper-based composite materials. However, the thermal conductivity of the heat sink material in the conventional scheme is relatively low. With the development of device integration, the heat power density is increasingly concentrated, and the conventional heat conducting material cannot meet the increasing heat dissipation demand of high-power devices.

[0062] Referring to FIGS. 4-5, in some embodiments of the present application, the heat conducting part 200 can include a diamond layer.

[0063] It should be noted that diamond, as the fourth generation semiconductor material, has extremely outstanding heat dissipation characteristics, and the thermal conductivity thereof can be as high as 2000 W / m·K, which is 10 times that of aluminum nitride, and can be used as the heat conducting part 200.

[0064] Referring to FIGS. 4-5, in some embodiments of the present application, the heat conducting part 200 can be a hexahedron with long and short sides, preferably a cuboid.

[0065] Referring to FIGS. 4-5, in some embodiments of the present application, the bottom plate 100 can include a metal substrate.

[0066] It should be noted that the bottom plate 100 can be made of aluminum, oxygen-free copper, or diamond copper composite material, and the thermal conductivity of the diamond copper composite material can be as high as 1000 W / m·K, which is 2-3 times that of oxygen-free copper, and is preferably used as the bottom plate 100. Therefore, using diamond and its composite materials as heat dissipation materials can increase the thermal conductivity and reduce the device thermal resistance.

[0067] Referring to FIGS. 8-9, in some embodiments of the present application, in the direction perpendicular to the bottom plate 100, the depth of the first mounting groove 101 is greater than or equal to the thickness of the heat conducting part 200. In this way, the surface of the heat conducting part 200 facing the light emitting chip 300 can be flush with the surface of the bottom plate 100 facing the light emitting chip 300, or the surface of the heat conducting part 200 facing the light emitting chip 300 can be lower than the surface of the bottom plate 100 facing the light emitting chip 300. That is, the entire heat conducting part 200 is located in the first mounting groove 101, which can further improve the heat dissipation effect.

[0068] It should be noted that the heat-conducting part 200 can enter the first mounting groove 101 on the bottom plate 100 entirely or partially, and the depth of entry is different, the length of the heat dissipation path is different, and the heat dissipation effect is also different. The greater the depth of the heat-conducting part 200 entering the first mounting groove 101, the better the heat dissipation effect. If better heat dissipation efficiency is pursued, the heat-conducting part 200 needs to enter the first mounting groove 101 on the bottom plate 100 entirely, so that the surface of the heat-conducting part 200 is flush with the surface of the bottom plate 100, or the surface of the heat-conducting part 200 is recessed in the surface of the bottom plate 100.

[0069] For example, when the heat-conducting part 200 is a diamond layer, the heat-conducting part 200 can be deposited in the first mounting groove 101. Considering the diamond film deposition process, the minimum thickness is several microns, and in addition, the thickness of the heat-conducting part 200 cannot exceed the thickness of the upper half of the bottom plate 100. The thickness of the diamond layer can be in the range of 1 um to 500 um. Considering the feature of dense arrangement of light-emitting chips, it can be preferred that the diamond enters the first mounting groove 101 entirely, i.e., 300 um.

[0070] When the side surface of the heat-conducting part 200 facing the light-emitting chip 300 is flush with the side surface of the bottom plate 100 facing the light-emitting chip 300, the size of the heat-conducting part 200 is just the same as the size of the first mounting groove 101 on the bottom plate 100; when the surface of the heat-conducting part 200 facing the light-emitting chip 300 is recessed in the surface of the bottom plate 100 facing the light-emitting chip 300, the height of the heat-conducting part 200 is less than the height of the first mounting groove 101 on the bottom plate 100.

[0071] When the surface of the heat-conducting part 200 facing the light-emitting chip 300 is flush with the surface of the bottom plate 100 facing the light-emitting chip 300, or the surface of the heat-conducting part 200 facing the light-emitting chip 300 is recessed in the surface of the bottom plate 100 facing the light-emitting chip 300, the length of the heat transfer path of the light-emitting chip 300 is less than or equal to the thickness value h2+h3 of the bottom plate 100, while the length of the heat transfer path of the light-emitting chip 300 in the prior art is h1+h2+h3, i.e., the sum of the thicknesses of the bottom plate 100 and the heat-conducting part 200. It can be seen that the heat transfer path of the heat-conducting part 200 and the bottom plate 100 is reduced, thereby reducing the heat transfer thermal resistance and improving the heat dissipation efficiency.

[0072] It should be noted that in the prior art, the light-emitting chip 300 is mounted on the surface of the heat-conducting part 200, and the heat-conducting part 200 is mounted on the surface of the bottom plate 100, and the light beam emitted by the light-emitting chip 300 is irradiated onto the prism 800.

[0073] Please refer to FIG. 10, the heat-conducting part 200 is installed in the first installation groove 101 of the bottom plate 100, the light-emitting chip 300 is installed on the heat-conducting part 200, and if the prism 800 of the prior art is directly applied, part of the light beams emitted by the light-emitting chip 300 cannot irradiate on the prism 800, affecting the light collection efficiency.

[0074] Specifically, the light emitted by the light-emitting chip 300 has a certain divergence angle, and directly applying the ordinary prism 800 will cause a great loss of light efficiency, reducing the performance of the device.

[0075] Please refer to FIG. 11 and FIG. 12, in some embodiments of the present application, the bottom plate 100 is provided with a reflection structure 400, the reflection structure 400 is arranged on the light-emitting side of the light-emitting chip 300, the surface of the side of the reflection structure 400 facing the light-emitting chip 300 is a reflection surface, and the reflection surface is inclined relative to the surface of the bottom plate 100.

[0076] In some embodiments of the present application, the reflection surface of the reflection structure 400 can face the light-emitting side of the light-emitting chip 300, so that the light beams emitted by the light-emitting chip 300 are reflected to the light-transmitting part through the reflection structure 400.

[0077] In some embodiments of the present application, one side of the bottom plate 100 also has a bearing groove 103, the bearing groove 103 is communicated with the first installation groove 101. The reflection structure 400 is arranged in the bearing groove 103, and in the direction perpendicular to the bottom plate 100, part of the reflection structure 400 is located in the bearing groove 103, and the other part of the reflection structure 400 is located outside the bearing groove 103. In this way, the light beams emitted by the light-emitting chip 300 can be projected on the reflection structure 400 as much as possible, so that the light collection efficiency can be improved.

[0078] In some possible embodiments, the groove bottom of the bearing groove 103 and the groove bottom of the first installation groove 101 can be flush, so that the bearing groove 103 and the first installation groove 101 can be formed by one manufacturing process, thereby simplifying the process.

[0079] Please refer to FIG. 10-FIG. 12, in some embodiments of the present application, the plurality of light-emitting chips 300 are arranged in two rows, and the two rows of light-emitting chips 300 are respectively: one row of first-type light-emitting chips 300a and one row of second-type light-emitting chips 300b. Among them, one row of first-type light-emitting chips 300a is used to emit light towards one row of second-type light-emitting chips 300b, and one row of second-type light-emitting chips 300b is used to emit light towards one row of first-type light-emitting chips 300a, that is, the light-emitting sides of the adjacent first-type light-emitting chips 300a and second-type light-emitting chips 300b are opposite. The reflection structure 400 is located between the first-type light-emitting chips 300a and the second-type light-emitting chips 300b, so that the reflection structure 400 can reflect the light emitted by the adjacent first-type light-emitting chips 300a and second-type light-emitting chips 300b at the same time.

[0080] In some possible embodiments, the bearing groove 103 where the reflection structure 400 is located is in communication with the first mounting groove 101 where the first light emitting chip 300a is located and in communication with the first mounting groove 101 where the second light emitting chip 300b is located. The reflection structure 400 has two oppositely arranged reflection surfaces, i.e., a first reflection surface and a second reflection surface. The first reflection surface faces the light emitting side of the first light emitting chip 300a, and the second reflection surface faces the light emitting side of the second light emitting chip 300b. The light beams emitted by the light emitting sides of the two adjacent light emitting chips 300 are reflected by the two reflection surfaces, respectively.

[0081] In some embodiments of the present application, the two reflection surfaces of the reflection structure 400 can be oppositely arranged, i.e., the two reflection surfaces are located on two opposite surfaces of the reflection structure 400.

[0082] Next, taking the example of mounting 6*2, i.e., 12 light emitting chips 300, the 12 light emitting chips 300 are located on the opposite sides of the reflection structure 400, respectively. Among them, 6 light emitting chips 300 face the first reflection surface of the reflection structure 400, and the other 6 light emitting chips 300 face the second reflection surface of the reflection structure 400. The light beams of the 6 light emitting chips 300 facing the first reflection surface are projected onto the first reflection surface, and the light beams of the 6 light emitting chips 300 facing the second reflection surface are projected onto the second reflection surface.

[0083] Please refer to FIGS. 10-12. In some embodiments of the present application, the reflection structure 400 includes a support part 401 and a reflection film 402. The support part 401 is connected with the groove bottom of the bearing groove 103. The support part 401 is integrally formed on the bottom plate 100. The support part 401 has a support inclined surface facing the light emitting side of the light emitting chip 300, and the reflection film 402 covers the support inclined surface. The included angle between the support inclined surface and the bottom surface of the support part 401 is an acute angle, so as to ensure that the light beams emitted by the light emitting chip 300 can be reflected. Here, the bottom surface of the support part 401 can be the surface of the support part 401 facing one side of the bottom plate 100, and the bottom surface of the support part 401 is connected with the groove bottom of the bearing groove 103.

[0084] In some embodiments of the present application, the reflection structure 400 can be integrally formed with the bottom plate 100. A 45° slope can be processed on the support part 401 of the reflection structure 400, and the reflection film 402 can be plated on the slope, so as to improve the light efficiency. The reflection film 402 is a high reflection film, and the material can be aluminum, silver or gold film.

[0085] In some embodiments of the present application, the bottom plate 100 can be made of oxygen-free copper, which has a much higher thermal conductivity than glass, and can quickly conduct the heat of the reflecting surface out, obtaining a high-quality light beam; through the design of double-sided slope, the spot size H can be greatly reduced from 6mm to 2-6mm, which is beneficial to the miniaturization of the laser and the rear-end optical path.

[0086] It should be noted that it is challenging to directly deposit a diamond film on the copper bottom plate 100, because the copper and the diamond have a large difference in the coefficient of thermal expansion, which can easily cause the film layer to peel off. In order to improve the adhesion of the diamond film, a middle layer is deposited on the copper bottom plate 100 in advance.

[0087] Referring to FIG. 13, in some embodiments of the present application, the laser further includes a connecting layer 500 located in the first mounting groove 101, and the connecting layer 500 is connected to the groove bottom of the first mounting groove 101. The connecting layer 500 is the middle layer.

[0088] In some embodiments of the present application, the heat-conducting part 200 can be directly deposited on the side of the connecting layer 500 away from the groove bottom of the first mounting groove 101. For example, the heat-conducting part 200 can be directly deposited on the connecting layer 500, and the connecting layer 500 can enhance the adhesion of the heat-conducting part 200. In some embodiments of the present application, a metal layer 600 can be provided on the connecting layer 500 before depositing the heat-conducting part 200, and the metal layer 600 can further enhance the adhesion stability of the heat-conducting part 200. The heat-conducting part 200 is deposited in the first mounting groove 101, which can improve the production efficiency and reliability.

[0089] In some embodiments of the present application, the material of the connecting layer 500 can be a silicon film and a silicon nitride film.

[0090] Referring to FIG. 13, in some embodiments of the present application, the laser further includes a metal layer 600 located on the side of the heat-conducting part 200 away from the groove bottom of the first mounting groove 101, and the metal layer 600 is used for electrical connection between the light-emitting chips 300.

[0091] In some embodiments of the present application, the heat-conducting part 200 can include a diamond layer, and a metal layer 600 can be made on the surface of the diamond layer after deposition. The material of the metal layer 600 can be a titanium platinum gold (TiPtAu) layer, and the electrical connection between the light-emitting chips can be realized by a gold wire bonding process on the metal layer 600.

[0092] It should be noted that the conductive property of the metal layer 600 makes it easy to electrically conduct with the bottom plate 100, causing the light-emitting chips 300 to short circuit and burn out the light-emitting chips 300.

[0093] Please refer to FIG. 14-15, in some embodiments of the present application, the bottom plate 100 also has at least one second mounting slot 102 on one side, and the at least one second mounting slot 102 is in one-to-one correspondence with the at least one first mounting slot 101; the second mounting slot 102 is located on the side of the corresponding first mounting slot 101 facing the light emitting chip 300. In this way, the distance between the second mounting slot 102 and the light emitting chip 300 is less than the distance between the first mounting slot 101 and the light emitting chip 300. The second mounting slot 102 is distributed around the corresponding first mounting slot 101, that is, the second mounting slot 102 is arranged around the four sides of the first mounting slot 101.

[0094] The laser also includes an insulating layer 700 located in the second mounting slot 102, and the insulating layer 700 is located between the metal layer 600 and the sidewall of the second mounting slot 102 in the direction parallel to the bottom plate 100. In this way, the insulating layer 700 can avoid the metal layer 600 directly contacting the bottom plate 100, so as to avoid the short circuit of the light emitting chip 300.

[0095] In some embodiments of the present application, when the surface of the diamond heat conduction part 200 facing the light emitting chip 300 is flush with the surface of the bottom plate 100 facing the light emitting chip 300, that is, the vertical height of the diamond heat conduction part 200 is equal to the depth of the first recess. The tolerance of the diamond deposition thickness is generally ±0.03mm, when the deposition depth is a typical value or a positive tolerance, generally speaking, the subsequent bonding process will not cause the light emitting chip to short circuit; but when the deposition depth is a negative tolerance, the subsequent metallization layer will be in contact with the bottom plate 100, and the chip will be short-circuited after bonding. In this case, the thickness of the insulating film layer is usually >0.03mm, and the length and width directions are usually increased by 0.05mm-0.1mm than the size of the diamond, that is, a surrounding type area insulation is formed along the diamond.

[0096] In some embodiments of the present application, when the surface of the diamond heat conduction part 200 facing the light emitting chip 300 is recessed from the surface of the bottom plate 100 facing the light emitting chip 300, that is, the vertical height of the diamond heat conduction part 200 is less than the depth of the first recess. If the diamond heat conduction part 200 is metallized, the metallization layer is recessed from the surface of the bottom plate 100 facing the light emitting chip 300, and the risk of short circuit is great; in addition, after the light emitting chip is soldered to the diamond heat conduction part 200, the light emitting end of the light emitting chip is easy to be blocked; if the diamond heat conduction part 200 is metallized, the metallization layer is flush with the end surface of the bottom plate 100 facing the light emitting chip 300, considering the negative tolerance of 0.03mm of the diamond deposition, plus the metallization layer and the solder layer about 0.01mm, the cumulative thickness of the insulating layer needs to be greater than 0.04mm.

[0097] In some embodiments of the present application, in order to improve the insulation effect of the insulation layer 700, the insulation layer 700 completely covers the sidewall of the metal layer 600, and the insulation layer 700 is distributed around the metal layer 600. In the direction perpendicular to the bottom plate 100, the thickness of the insulation layer 700 is greater than or equal to the thickness of the metal layer 600, and the size of the insulation layer 700 is greater than the size of the heat conduction part 200, forming a surrounding area insulation, so as to ensure the insulation between the metal layer 600 and the bottom plate 100.

[0098] In some embodiments of the present application, the material of the insulation layer 700 can include silicon oxide, silicon nitride, aluminum oxide, titanium dioxide and zirconium oxide, and the like, and silicon oxide is preferably used as the insulation film layer. In order to simultaneously satisfy the insulation function and the function of enhancing the adhesion of the film layer, the insulation layer 700 is selected to be a silicon nitride film.

[0099] After the heat dissipation efficiency is improved, the arrangement density of the light emitting chips will change. On the one hand, in the case that the number of light emitting chips remains unchanged, the arrangement density of adjacent light emitting chips can be increased, for example, the original spacing of 1.5-3mm can be shortened to within 1mm; on the other hand, under the same working conditions, the optical power of the light emitting chip will be increased by about 10%-20%, and after conversion, the number of light emitting chips can be reduced.

[0100] Referring to FIGS. 11-15, the present application provides a manufacturing method of a laser, comprising:

[0101] providing a bottom plate 100, and forming at least one first mounting groove 101 on one side of the bottom plate 100;

[0102] providing a frame 900, the frame 900 being fixedly connected with the bottom plate 100, and the at least one first mounting groove 101 being located in the area surrounded by the frame 900;

[0103] depositing a plurality of heat conduction parts 200 in the first mounting groove 101;

[0104] providing a plurality of light emitting chips 300, the plurality of light emitting chips 300 corresponding to the plurality of heat conduction parts 200, and the light emitting chips 300 being mounted on the surface of the corresponding heat conduction part 200 away from the bottom plate 100;

[0105] providing a light-transmitting component A, the light-transmitting component A being mounted on the side of the frame 900 away from the bottom plate 100.

[0106] In some embodiments of the present application, after the first mounting groove 101 is processed on the bottom plate 100, the process of deposition→grinding and polishing→metallization is sequentially performed.

[0107] The deposition step refers to depositing a diamond layer as the heat conduction part 200 in the first mounting groove 101. Due to the conventional MPCVD (Microwave Plasma Chemical Vapor Deposition) deposition method, there is a tip discharge, and if the discharge point temperature is too high, the metal material of the base plate 100 can be melted. Therefore, the HFCVD (Hot Filament Chemical Vapor Deposition) or PECVD (Plasma Enhanced Chemical Vapor Deposition) method can be selected to reduce or avoid the above problems. Secondly, the deposition temperature is lower than the melting point of the metal material of the base plate 100, such as aluminum which is 660.3℃; further, in the thickness setting and diamond grain size design, the thermal conductivity of polycrystalline diamond is roughly proportional to the thickness when the thickness is greater than 23um, and the larger the grain size, the higher the thermal conductivity. In an ideal case, the grain size is close to the thickness size.

[0108] The polishing step refers to polishing the deposited diamond surface to a smooth surface using a conventional grinder, and the roughness is generally less than 100um, which is convenient for subsequent metallization.

[0109] The metallization step refers to forming a metal layer 600 by a magnetron sputtering process, and the material of the metal layer 600 is usually TiPtAu or NiAu. The outer side of the metal layer 600 is finally evaporated or sputtered with a layer of solder such as AuSn, which is convenient for mounting the light emitting chip 300.

[0110] In some embodiments of the present application, before depositing a plurality of heat conduction parts 200 in the first mounting groove 101, the method further comprises: depositing a connecting layer 500 in the first mounting groove 101.

[0111] It should be noted that since it involves soldering multiple light emitting chips (for example, 12 light emitting chips), the soldering temperature is very high, about 350℃, and if the light emitting chips are soldered one by one, the previous light emitting chips will be repeatedly heated, which may cause the light emitting chips to fail. Therefore, a suction nozzle for simultaneously clamping multiple light emitting chips can be provided on the eutectic soldering machine to simultaneously realize eutectic soldering of multiple light emitting chips, and 12 light emitting chips can be soldered at one time.

[0112] For the traditional heat dissipation material, aluminum nitride and silicon carbide and other materials are usually selected as the heat conduction part 200, copper and copper-based composite materials such as tungsten copper are usually selected as the bottom plate 100, and the heat conduction part 200 and the bottom plate 100 are prepared respectively by using a traditional process, and then combined again according to the requirements.

[0113] If the diamond heat conduction part 200 is prepared by using a traditional process, after deposition, grinding and polishing, and metallization are completed, the diamond heat conduction part 200 (primary heat sink) needs to be cut, and the yield is not high. The cut diamond heat conduction part 200 is first welded with the chip, and then welded with the bottom plate 100 (tube shell).

[0114] For the new preparation process, the characteristics of diamond material deposition and growth are fully utilized, the diamond heat conduction part 200 (primary heat sink) is directly deposited into the first mounting groove 101 of the bottom plate 100 and combined with the bottom plate 100, and an integrated double heat sink structure of the heat conduction part 200 and the bottom plate 100 (tube shell) is obtained. Then, the grinding and polishing of the diamond heat conduction part 200 are completed, and finally the integrated double heat sink structure is welded with the chip.

[0115] Since the diamond material is prepared by a deposition production process, it can be integrated with the bottom plate 100 in the previous preparation process, without the need for cutting, improving the yield and greatly simplifying the processing and manufacturing process.

[0116] In addition, the application also provides a laser projection light source, which comprises a laser and a shell, and the laser is provided by any one of the above-mentioned embodiments. Therefore, the laser projection light source has the effect of shortening the heat transfer path, reducing the heat transfer resistance, and improving the heat dissipation efficiency.

[0117] Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the application, and not to limit them; although the application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that: it can still modify the technical solutions recorded in the foregoing embodiments, or make equivalent replacement for part or all of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the application.

[0118] In order to facilitate explanation, the above description has been made in combination with specific embodiments. However, the above exemplary discussion is not intended to exhaust or limit the embodiments to the specific forms disclosed above. Various modifications and variations can be obtained according to the above teachings. The selection and description of the above embodiments are for better explanation of the principles and practical applications, so that those skilled in the art can better use the embodiments and various different modified embodiments suitable for specific use considerations.

Claims

1. A laser characterized by, The laser includes: a bottom plate, a frame, a light-transmitting component, a plurality of heat-conducting parts, and a plurality of light-emitting chips; one side of the bottom plate has at least one first mounting groove; the frame is fixedly connected with the bottom plate, and the at least one first mounting groove is located in an area surrounded by the frame; the plurality of heat-conducting parts are mounted in the at least one first mounting groove; the plurality of light-emitting chips correspond to the plurality of heat-conducting parts, and the light-emitting chips are mounted on surfaces of the corresponding heat-conducting parts away from the bottom plate; the light-transmitting component is mounted on a side of the frame away from the bottom plate.

2. The laser of claim 1, wherein, In a direction perpendicular to the bottom plate, a distance between a surface of the light-emitting chip facing the heat-conducting part and a surface of the bottom plate facing away from the heat-conducting part is less than a sum of a thickness of the heat-conducting part and a maximum thickness of the bottom plate.

3. The laser of claim 2, wherein, In the direction perpendicular to the bottom plate, a depth of the first mounting groove is greater than or equal to the thickness of the heat-conducting part.

4. The laser of claim 3, wherein, A surface of the heat-conducting part close to the light-emitting chip is flush with a surface of the bottom plate close to the light-emitting chip, or the surface of the heat-conducting part close to the light-emitting chip is lower than the surface of the bottom plate close to the light-emitting chip.

5. The laser of claim 1, wherein, The bottom plate includes a bottom plate body and a support boss provided on the bottom plate body, and one side of the support boss away from the bottom plate body has the at least one first mounting groove; the frame surrounds the support boss, and the frame is connected with the bottom plate body; wherein, in a direction perpendicular to the bottom plate body, a depth of the first mounting groove is less than or equal to a thickness of the support boss.

6. The laser of any of claims 1-5, wherein, The laser further includes a reflection structure provided on the bottom plate, the reflection structure is provided on a light-emitting side of the light-emitting chip, a surface of one side of the reflection structure facing the light-emitting chip is a reflection surface, and the reflection surface is inclined relative to a surface of the bottom plate.

7. The laser of claim 6, wherein, One side of the bottom plate further has a bearing groove, the bearing groove is in communication with the first mounting groove; the reflection structure is provided in the bearing groove, and in a direction perpendicular to the bottom plate, a part of the reflection structure is located in the bearing groove, and another part of the reflection structure is located outside the bearing groove.

8. The laser of claim 7, wherein, The reflection structure includes a support part and a reflection film, and the support part is connected with a groove bottom of the bearing groove; the support part has a support inclined surface, the support inclined surface faces the light-emitting side of the light-emitting chip, and an included angle between the support inclined surface and a bottom surface of the support part is an acute angle, and the reflection film is covered on the support inclined surface.

9. The laser of claim 8, wherein, The support part and the bottom plate are an integral molding structure.

10. The laser of any of claims 7-9, wherein, The plurality of light-emitting chips are arranged in two rows, and the two rows of light-emitting chips are a row of first-type light-emitting chips and a row of second-type light-emitting chips; wherein, the row of first-type light-emitting chips are used for emitting light rays toward the row of second-type light-emitting chips, and the row of second-type light-emitting chips are used for emitting light rays toward the row of first-type light-emitting chips; and the reflection structure is located between the first-type light-emitting chips and the second-type light-emitting chips.

11. The laser of claim 10, wherein, The bearing groove where the reflection structure is located is in communication with the first mounting groove where the first type of light emitting chip is located and in communication with the first mounting groove where the second type of light emitting chip is located; the reflection structure has two oppositely arranged reflection surfaces, which are a first reflection surface and a second reflection surface; the first reflection surface faces the light emitting side of the first type of light emitting chip, and the second reflection surface faces the light emitting side of the second type of light emitting chip.

12. The laser of claim 10, wherein, Each first mounting groove corresponding to each first type of light emitting chip is separately arranged; each first mounting groove corresponding to each second type of light emitting chip is separately arranged; Alternatively, each first mounting groove corresponding to each first type of light emitting chip is in communication; each first mounting groove corresponding to each second type of light emitting chip is in communication.

13. The laser of any of claims 1-12, wherein, The laser further comprises a connecting layer located in the first mounting groove, the connecting layer is connected with the groove bottom of the first mounting groove, and the heat conduction part is deposited on one side of the connecting layer away from the groove bottom of the first mounting groove.

14. The laser of any of claims 1-12, wherein, The laser further comprises a metal layer located on one side of the heat conduction part away from the groove bottom of the first mounting groove, and the metal layer is used for electrical connection with the light emitting chip.

15. The laser of claim 14, wherein, One side of the bottom plate further has at least one second mounting groove, and at least one second mounting groove is in one-to-one communication with at least one first mounting groove; the second mounting groove is located on the side of the corresponding first mounting groove facing the light emitting chip; the second mounting groove is distributed around the corresponding first mounting groove; The laser further comprises an insulating layer located in the second mounting groove, and in the direction parallel to the bottom plate, the insulating layer is located between the metal layer and the sidewall of the second mounting groove.

16. The laser of claim 15, wherein, The insulating layer covers the sidewall of the metal layer, and the insulating layer is distributed around the metal layer; In the direction perpendicular to the bottom plate, the thickness of the insulating layer is greater than or equal to the thickness of the metal layer.

17. The laser of claims 1-16, wherein, The heat conduction part comprises a diamond layer, and the bottom plate comprises a metal substrate.

18. A method of fabricating a laser, comprising: The method comprises: providing a bottom plate and forming at least one first mounting groove on one side of the bottom plate; providing a frame, the frame is fixedly connected with the bottom plate, and the at least one first mounting groove is located in the area surrounded by the frame; depositing a plurality of heat conduction parts in the first mounting groove; providing a plurality of light emitting chips, the plurality of light emitting chips correspond to the plurality of heat conduction parts, and the light emitting chip is mounted on the surface of the corresponding heat conduction part away from the bottom plate; providing a light-transmitting component, the light-transmitting component is mounted on the side of the frame away from the bottom plate.

19. The method of fabricating a laser of claim 18, wherein, Before depositing a plurality of heat conduction parts in the first mounting groove, further comprising: depositing a connecting layer in the first mounting groove.

20. A laser projection light source, characterized by, The laser projection light source comprises a laser and a shell, and the laser is any one of the lasers described in claims 1 to 17.

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