Resin mask release agent composition

Abstract

Provided, in one embodiment, is a resin mask release agent composition capable of reducing residue from cleaning after resin mask release.　The present disclosure, in one embodiment, pertains to a resin mask release agent composition containing a hydroxide (component A), an alkanolamine (component B), two or more azole compounds (component C), an organic solvent (component D), and water (component E).

Description

Resin mask remover composition

[0001] The present disclosure relates to a resin mask remover composition, a method for cleaning a substrate, and a method for manufacturing an electronic component.

[0002] In recent years, personal computers and various electronic devices have become increasingly power-efficient, faster, and more compact, and the wiring on the package substrates and other components they are equipped with has become increasingly finer every year. Until now, metal masking has been the primary method used to form such fine wiring and connection terminals such as pillars and bumps, but due to its limited versatility and the difficulty of adapting to the miniaturization of wiring, new methods are being adopted.

[0003] One new method is known to use a resin mask, also known as a dry film resist. In this method, a metal seed layer is formed on an insulating substrate by electroless plating. The metal seed layer is then laminated with a resin mask, and a pattern is formed by exposure and development processes. Copper wiring and tin bumps are then formed by electroplating. The resin mask remaining on the substrate is finally peeled and removed using an alkaline stripper composition (strip cleaner).

[0004] For example, Japanese Patent Laid-Open Publication No. 2017-116871 (Patent Document 1) proposes a cleaning composition for removing resin masks, which contains a specific amino alcohol, a specific tetraalkylammonium hydroxide, a carboxylic acid or salt thereof having from 1 to 5 carbon atoms, a specific glycol ether, a specific imidazole compound, and water. Japanese Patent Laid-Open Publication No. 2020-519915 (Patent Document 2) proposes a dry film resist remover composition containing 10 to 30 wt% of an aqueous quaternary ammonium salt selected from tetramethylammonium hydroxide, tetramethylammonium pentafluoroxenonate, and mixtures thereof, 30 to 60 wt% of an alkanolamine compound, 10 to 30 wt% of a protic (positive polar) organic solvent, and 0.1 to 5 wt% of an azole compound containing sulfur.

[0005] In one aspect, the present disclosure relates to a resin mask remover composition containing the following components A, B, C, D, and E: Component A: hydroxide; Component B: alkanolamine; Component C: two or more azole compounds; Component D: organic solvent; and Component E: water.

[0006] In one aspect, the present disclosure relates to a resin mask remover composition containing the following components A, B, C, D, and E, wherein the mass ratio B / C of component B to component C is 1 or more and 500 or less, and the mass ratio E / C of component E to component C is 100 or more and 3000 or less: Component A: hydroxide; Component B: alkanolamine; Component C: two or more azole compounds; Component D: organic solvent; Component E: water.

[0007] In one aspect, the present disclosure relates to a method for cleaning a substrate, comprising stripping a resin mask from a substrate having a copper-containing metal layer and a resin mask on its surface using the resin mask stripper composition of the present disclosure.

[0008] In one aspect, the present disclosure relates to a method for producing an electronic component, comprising a step of cleaning a substrate having a copper-containing metal layer and a resin mask on its surface using the cleaning method of the present disclosure.

[0009] When forming fine wiring on printed circuit boards and the like, a stripper composition is required to have high resin mask removability (stripping ability and cleaning ability) in order to reduce not only the residue of the resin mask but also the residue of auxiliary agents contained in solder, plating solutions, etc. used in forming fine wiring and bumps. Furthermore, because corrosion and discoloration of metals such as copper, which are often used in wiring and connection terminals, can lead to a decrease in the quality and value of package substrates, a stripper composition is required to have high corrosion and discoloration prevention properties. Furthermore, in the resin mask cleaning process, after the resin mask is stripped with a stripper, cleaning (e.g., acid cleaning) is usually performed. Even after this cleaning after resin mask removal (hereinafter also referred to as "post-cleaning"), residues of components (e.g., inhibitors) in the stripper composition may remain. Residual components such as inhibitors on the substrate may adversely affect processes subsequent to the resin mask cleaning process (e.g., metal seed layer removal process). In order to prevent adverse effects on subsequent processes (for example, a metal seed layer removal process) following the resin mask cleaning process, the stripper composition is required to have high post-cleaning properties (low residues remaining in cleaning after the resin mask is removed).

[0010] Therefore, the present disclosure provides a resin mask remover composition that can reduce residues during cleaning after removing a resin mask, a method for cleaning a substrate, and a method for manufacturing electronic components.

[0011] According to one aspect of the present disclosure, a resin mask remover composition can be provided that can reduce residues that occur during cleaning after a resin mask is removed with the remover composition.

[0012] [Stripper Composition] The present disclosure is based on the finding that, in one or more embodiments, a stripper composition containing a hydroxide, an alkanolamine, two or more azole compounds, an organic solvent, and water can be used to efficiently remove (stripped) a resin mask while reducing residues in cleaning after the resin mask is stripped (improving low residue in post-cleaning). Furthermore, in one or more embodiments, the present disclosure is based on the finding that, when the resin mask is stripped from a substrate having a copper-containing metal layer and a resin mask on its surface, the resin mask can be efficiently removed (stripped) while suppressing copper corrosion and discoloration.

[0013] That is, in one aspect, the present disclosure relates to a resin mask remover composition (hereinafter also referred to as the "removal composition of the present disclosure") containing the following components A, B, C, D, and E: Component A: hydroxide; Component B: alkanolamine; Component C: two or more azole compounds; Component D: organic solvent; Component E: water.

[0014] According to one or more embodiments of the present disclosure, a resin mask remover composition can be provided that can efficiently remove (stripping) a resin mask while reducing residues in cleaning after the resin mask is stripped (improving the ability to reduce residues in post-cleaning). Furthermore, in one or more embodiments, when a resin mask is stripped from a substrate having a copper-containing metal layer and a resin mask on its surface, the resin mask can be efficiently removed (stripped) while suppressing copper corrosion and discoloration. Furthermore, by using the resin mask remover composition of the present disclosure for cleaning electronic components such as electronic circuit boards having a resin mask, high-quality electronic components can be obtained with a high yield.

[0015] Although the details of the mechanism of action by which the effects of the present disclosure are manifested are partially unknown, it is presumed as follows. In the present disclosure, by using a hydroxide (component A) and an alkanolamine (component B) in combination, it is believed that components A and B penetrate into the resin mask, promoting dissociation of the alkali-soluble resin contained in the resin mask, and further promoting the peeling of the resin mask by causing the repulsion of charges resulting from this dissociation. Meanwhile, it is believed that the alkanolamine (component B) is also involved in copper etching (corrosion). However, in the present disclosure, it is believed that a protective film is formed by the adsorption of two or more azole compounds (component C) onto the copper surface, and copper etching (corrosion) due to the coordination of the alkanolamine (component B) is suppressed. As a result, it is believed that in the presence of the alkanolamine (component B), good peeling performance (resin mask removability) is exhibited while suppressing copper etching (corrosion). Furthermore, it is generally known that forming a protective film on the copper surface is an effective method for suppressing copper etching (corrosion). However, excessive formation of the protective film makes it difficult to remove residues on the substrate, which may adversely affect subsequent processes (e.g., the metal seed layer removal process) after the resin mask cleaning process. Furthermore, excessive formation of the protective film may discolor the copper surface, resulting in a decrease in the quality of the substrate. In contrast, the present disclosure believes that by incorporating two or more azole compounds (component C), the formation of the protective film can be controlled, thereby reducing residues on the substrate during post-cleaning and preventing adverse effects on subsequent processes (e.g., the metal seed layer removal process) after the resin mask cleaning process. Furthermore, it is believed that copper etching (corrosion) and discoloration can be suppressed. However, the present disclosure need not be interpreted as being limited to this mechanism.

[0016] In the present disclosure, a resin mask refers to a mask for protecting a surface of a material from processes such as etching, plating, and heating, i.e., a mask formed from a resin that functions as a protective film. In one or more embodiments, the resin mask may be a resist layer after exposure and development processes, a resist layer that has been subjected to at least one of exposure and development (hereinafter also referred to as "exposed and / or developed"), or a hardened resist layer. In one or more embodiments, the resin mask is formed using a resist whose physical properties, such as solubility in a developer, change when exposed to light or an electron beam. Resists are broadly classified into negative and positive types based on how they react with light or an electron beam. Negative resists have the property of decreasing solubility in a developer when exposed to light, and in a layer containing negative resist (hereinafter also referred to as a "negative resist layer"), the exposed portion is used as a resin mask after exposure and development processes. Positive resists have the property that their solubility in a developer increases upon exposure. After exposure and development, the exposed portions of a layer containing the positive resist (hereinafter also referred to as a "positive resist layer") are removed, and the unexposed portions are used as a resin mask. By using a resin mask with such properties, fine connections on a circuit board, such as metal wiring, metal pillars, and solder bumps, can be formed. In one or more embodiments, the resin material forming the resin mask can be a film-like photosensitive resin, a resist film, or a photoresist. A general-purpose resist film can be used. In one or more embodiments, the resin mask is a copper or tin plating mask for use in a copper or tin plating process. Furthermore, in the present disclosure, cleaning a resin mask includes stripping the resin mask from a substrate bearing the resin mask using a stripper composition. Stripping the resin mask can include removing and / or dissolving the resin mask.

[0017] In one or more embodiments, the stripper composition of the present disclosure can be used for cleaning a substrate (object to be cleaned) having a copper-containing metal layer and a resin mask on its surface. In one or more embodiments, the stripper composition of the present disclosure can be used for stripping the resin mask from a substrate (object to be cleaned) having a copper-containing metal layer and a resin mask on its surface. That is, in one aspect, the present disclosure relates to use of the stripper composition of the present disclosure for stripping the resin mask from a substrate (object to be cleaned) having a copper-containing metal layer and a resin mask on its surface.

[0018] (Component A: Hydroxide) The hydroxide contained in the stripper composition of the present disclosure (hereinafter also referred to as "Component A") may be at least one selected from aliphatic quaternary ammonium hydroxides and inorganic metal hydroxides. Component A may be one type or a combination of two or more types.

[0019] <Aliphatic quaternary ammonium hydroxide> Examples of the aliphatic quaternary ammonium hydroxide include quaternary ammonium hydroxides represented by the following formula (I): The aliphatic quaternary ammonium hydroxides may be one type or a combination of two or more types. In the above formula (I), R １ , R ２ , R ３ and R ４ are each independently at least one selected from a methyl group, an ethyl group, a propyl group, a hydroxymethyl group, a hydroxyethyl group, and a hydroxypropyl group.

[0020] The quaternary ammonium hydroxide represented by formula (I) is a salt consisting of a quaternary ammonium cation and hydroxide, for example, tetramethylammonium hydroxide (TMAH), tetraethylammonium hydroxide, tetrapropylammonium hydroxide, 2-hydroxyethyltrimethylammonium hydroxide (choline), 2-hydroxyethyltriethylammonium hydroxide, 2-hydroxyethyltripropylammonium hydroxide, 2-hydroxypropyltrimethylammonium hydroxide, 2-hydroxypropyltriethylammonium hydroxide, 2-hydroxypropyltripropylammonium hydroxide, dimethylbis(2-hydroxyethyl)ammonium hydroxide, diethylbis(2-hydroxyethyl)ammonium hydroxide, dipropylbis(2-hydroxyethyl)ammonium hydroxide, tris(2-hydroxyethyl)methylammonium hydroxide, tris(2-hydroxyethyl)ethylammonium hydroxide, tris(2-hydroxyethyl)propylammonium hydroxide, tetrakis(2-hydroxyethyl)ammonium hydroxide, and at least one selected from tetrakis(2-hydroxypropyl)ammonium hydroxide. Among these, from the viewpoint of improving the removability of the resin mask, it is preferable that component A contains tetramethylammonium hydroxide (TMAH).

[0021] When component A contains an aliphatic quaternary ammonium hydroxide, the content of the aliphatic quaternary ammonium hydroxide in the stripper composition of the present disclosure is preferably 0.5% by mass or more, more preferably 1.5% by mass or more, and even more preferably 2.5% by mass or more, from the viewpoints of improving resin mask removability (stripping ability) and inhibiting copper corrosion, and from the same viewpoints, is preferably 15% by mass or less, more preferably 10% by mass or less, and even more preferably 8% by mass or less. When two or more types of aliphatic quaternary ammonium are used in combination, the content of the aliphatic quaternary ammonium refers to the total content thereof.

[0022] <Inorganic Metal Hydroxide> Examples of inorganic metal hydroxides include alkali metal hydroxides, and from the viewpoint of improving resin mask removability (stripping ability), at least one selected from sodium hydroxide, potassium hydroxide, lithium hydroxide, and calcium hydroxide is preferred. Among these, potassium hydroxide is preferred. The inorganic metal hydroxide may be a single type or a combination of two or more types. When the stripper composition of the present disclosure contains an inorganic metal hydroxide, the content of the inorganic metal hydroxide in the stripper composition of the present disclosure is preferably 0.1 mass% or more, more preferably 0.3 mass% or more, and even more preferably 0.5 mass% or more, from the viewpoint of improving resin mask removability (stripping ability) and inhibiting copper corrosion. From the same viewpoint, it is preferably 10 mass% or less, more preferably 8 mass% or less, and even more preferably 5 mass% or less. When two or more inorganic metal hydroxides are used in combination, the content of the inorganic metal hydroxide refers to the total content thereof.

[0023] From the viewpoint of improving resin mask removability, Component A preferably contains an aliphatic quaternary ammonium hydroxide, and more preferably contains tetramethylammonium hydroxide (TMAH). From the same viewpoint, in one or more embodiments, the content of the aliphatic quaternary ammonium hydroxide in Component A is preferably 0.5% by mass or more, more preferably 1.5% by mass or more, even more preferably 2.5% by mass or more, and even more preferably 3.5% by mass. From the same viewpoint, in one or more embodiments, the content of the aliphatic quaternary ammonium hydroxide in Component A is preferably 30% by mass or more, preferably 40% by mass or more, and preferably 50% by mass or more. In one or more embodiments, the content of the aliphatic quaternary ammonium hydroxide in Component A may be 75% by mass or more, or may be 100% by mass.

[0024] The content of Component A in the stripper composition of the present disclosure is preferably 1% by mass or more, more preferably 2% by mass or more, and even more preferably 4% by mass or more, from the viewpoints of improving resin mask removability (stripping ability) and inhibiting copper corrosion, and from the same viewpoints, is preferably 15% by mass or less, more preferably 10% by mass or less, and even more preferably 8% by mass or less. When Component A is a combination of two or more types, the content of Component A refers to the total content thereof.

[0025] In the present disclosure, the "content of each component in the stripper composition" refers to the content of each component at the time of use (at the time of cleaning), i.e., at the time when the stripper composition starts to be used for cleaning (resin mask removal treatment). In one or more embodiments, the content of each component in the stripper composition of the present disclosure can be considered to be the blending amount of each component in the stripper composition of the present disclosure.

[0026] (Component B: Alkanolamine) Examples of the alkanolamine (amino alcohol) (hereinafter also referred to as "Component B") contained in the stripper composition of the present disclosure include compounds represented by the following formula (II): Component B may be one type or a combination of two or more types.

[0027] In the above formula (II), R ５ represents a hydrogen atom, a methyl group, an ethyl group, or an aminoethyl group, and R ６ represents a hydrogen atom, a hydroxyethyl group, a hydroxypropyl group, a methyl group, or an ethyl group, and R ７ represents a hydroxyethyl group or a hydroxypropyl group.

[0028] Examples of component B include at least one selected from monoethanolamine (MEA), monoisopropanolamine, N-methylmonoethanolamine, N-methylisopropanolamine, N-ethylmonoethanolamine, N-ethylisopropanolamine, diethanolamine, diisopropanolamine, N-dimethylmonoethanolamine, N-dimethylmonoisopropanolamine, N-methyldiethanolamine, N-methyldiisopropanolamine, N-diethylmonoethanolamine, N-diethylmonoisopropanolamine, N-ethyldiethanolamine, N-ethyldiisopropanolamine, N-(β-aminoethyl)ethanolamine, N-(β-aminoethyl)isopropanolamine, N-(β-aminoethyl)diethanolamine, and N-(β-aminoethyl)diisopropanolamine. Among these, from the viewpoint of improving resin mask removability, component B preferably contains monoethanolamine (MEA).

[0029] The content of Component B in the stripper composition of the present disclosure is preferably 1% by mass or more, more preferably 6% by mass or more, and even more preferably 10% by mass or more, from the viewpoints of improving resin mask removability and inhibiting copper corrosion, and from the same viewpoints, is preferably 18% by mass or less, more preferably 16% by mass or less, and even more preferably 14% by mass or less. When Component B is a combination of two or more types, the content of Component B refers to the total content thereof.

[0030] (Component C: Two or More Azole Compounds) The two or more azole compounds (hereinafter also referred to as "Component C") contained in the cleaning composition of the present disclosure may be a combination of two or more azoles or derivatives thereof, from the viewpoints of inhibiting copper corrosion, inhibiting discoloration, and improving the low level of residue left in post-cleaning. For example, a combination of two or more compounds selected from compounds having an imidazole skeleton and compounds having a triazole skeleton is preferred. In one or more embodiments, the compound having an imidazole skeleton may be a compound having a benzimidazole skeleton, such as benzimidazole (BI), 5-methylbenzimidazole (MBI), or 5,6-dimethylbenzimidazole (DMBI). Examples of the compound having a triazole skeleton include benzotriazole (BTA), 1-methylbenzotriazole (MBTA), tolyltriazole (TTA), and 5,6-dimethylbenzotriazole (DMBTA). In one or more embodiments, from the viewpoints of inhibiting copper corrosion, inhibiting discoloration, and improving the low residue retention in post-cleaning, Component C preferably contains at least one compound having an imidazole skeleton (i.e., at least one of the two or more azole compounds is a compound having an imidazole skeleton), more preferably contains at least one compound having a benzimidazole skeleton, and even more preferably contains at least one selected from benzimidazole (BI), 5-methylbenzimidazole (MBI), and 5,6-dimethylbenzimidazole (DMBI). In one or more embodiments, from the same viewpoints, the content of the compound having an imidazole skeleton in Component C is preferably 0.01% by mass or more, more preferably 0.03% by mass or more, and even more preferably 0.05% by mass or more. In one or more embodiments, from the same viewpoint, the content of the compound having an imidazole skeleton in Component C is preferably 40% by mass or more, more preferably 50% by mass or more, even more preferably 80% by mass or more, still more preferably 90% by mass or more, and still more preferably 100% by mass.From the same viewpoint, component C preferably consists of two types of compounds having an imidazole skeleton, or two or more types of compounds having an imidazole skeleton, more preferably consists of two or more types of compounds having a benzimidazole skeleton, and even more preferably a combination of at least two or more selected from benzimidazole (BI), 5-methylbenzimidazole (MBI), and 5,6-dimethylbenzimidazole (DMBI). From the same viewpoint, component C is preferably a combination of at least one compound having an imidazole skeleton (preferably a benzimidazole skeleton) and at least one compound having a triazole skeleton. From the same viewpoint, the mass ratio of the content of the compound having an imidazole skeleton to the content of the compound having a triazole skeleton in component C (compound having an imidazole skeleton / compound having a triazole skeleton) is preferably 0.01 or more, more preferably 0.1 or more, and even more preferably 0.5 or more, and from the same viewpoint, preferably 10 or less, more preferably 8 or less, and even more preferably 5 or less.

[0031] From the viewpoint of improving the low residue remaining in post-cleaning, the content of component C in the stripper composition of the present disclosure is preferably 0.05% by mass or more, more preferably 0.07% by mass or more, and even more preferably 0.1% by mass or more. From the same viewpoint, it is preferably 0.5% by mass or less, more preferably 0.4% by mass or less, and even more preferably 0.3% by mass or less. More specifically, the content of component C in the stripper composition of the present disclosure is preferably 0.05% by mass or more and 0.5% by mass or less, more preferably 0.07% by mass or more and 0.4% by mass or less, and even more preferably 0.1% by mass or more and 0.3% by mass or less. Here, the content of component C refers to the total content of a combination of two or more types.

[0032] When the two or more components C contained in the stripper composition of the present disclosure are designated as c1 and c2 (in the case of a combination of three or more components, all components other than the first component (c1) are collectively referred to as c2), the mass ratio c1 / c2 is preferably 0.02 or more, more preferably 0.05 or more, and even more preferably 0.1 or more, from the viewpoints of inhibiting copper corrosion, inhibiting discoloration, and improving the low residue retention in post-cleaning, and from the same viewpoints, is preferably 50 or less, more preferably 20 or less, and even more preferably 10 or less. More specifically, the mass ratio c1 / c2 is preferably 0.02 or more and 50 or less, more preferably 0.05 or more and 20 or less, and even more preferably 0.1 or more and 10 or less. In one or more embodiments, c1 can be a compound having an imidazole skeleton (preferably a benzimidazole skeleton).

[0033] <Mass Ratio A / C> The mass ratio A / C of Component A to Component C (content of Component A / content of Component C) in the stripper composition of the present disclosure is preferably 10 or more, and more preferably 15 or more, from the viewpoint of improving resin mask removability and inhibiting copper corrosion. From the viewpoint of inhibiting copper corrosion, it is preferably 200 or less, and more preferably 100 or less, 50 or less, or 30 or less. From the viewpoint of inhibiting copper corrosion, the mass ratio A / C in the stripper composition of the present disclosure is preferably 10 or more and 200 or less, and more preferably 15 or more and 100 or less. When Component A is an aliphatic quaternary ammonium hydroxide, the mass ratio A / C is preferably 10 or more, more preferably 15 or more, and even more preferably 20 or more, from the viewpoint of improving resin mask removability and inhibiting copper corrosion. From the viewpoint of inhibiting copper corrosion, it is preferably 200 or less, and more preferably 100 or less. When component A contains an aliphatic quaternary ammonium hydroxide and an inorganic metal hydroxide, the mass ratio A / C is preferably 10 or more, and preferably 15 or more, from the viewpoint of improving resin mask removability and inhibiting copper corrosion, and is preferably 200 or less, and preferably 100 or less, and preferably 50 or less, and preferably 30 or less, from the viewpoint of inhibiting copper corrosion.

[0034] <Mass Ratio B / C> From the viewpoint of improving resin mask removability, the mass ratio B / C of Component B to Component C (content of Component B / content of Component C) in the stripper composition of the present disclosure is preferably 1 or more, preferably 20 or more, preferably 40 or more, or preferably 50 or more, and from the viewpoint of copper corrosion inhibition, it is preferably 500 or less, preferably 200 or less, or preferably 150 or less. More specifically, the mass ratio B / C in the stripper composition of the present disclosure is preferably 1 or more and 500 or less, more preferably 20 or more and 200 or less, even more preferably 40 or more and 150 or less, and even more preferably 50 or more and 150 or less.

[0035] [Organic Solvent (Component D)] The stripper composition of the present disclosure contains one organic solvent (hereinafter also referred to as "Component D"), and the organic solvent may be a combination of two or more organic solvents. In one or more embodiments, Component D may be at least one solvent selected from glycol ethers and aromatic ketones. Examples of glycol ethers include compounds having a structure in which 1 to 3 moles of ethylene glycol are added to an alcohol having 1 to 8 carbon atoms. Specific examples of glycol ethers include at least one selected from diethylene glycol monobutyl ether (BDG), ethylene glycol monobenzyl ether, diethylene glycol monohexyl ether, ethylene glycol monophenyl ether, and diethylene glycol diethyl ether. Examples of aromatic ketones include acetophenone. Among these, from the viewpoint of improving resin mask removability, Component D is preferably a glycol ether, and more preferably diethylene glycol monobutyl ether (BDG).

[0036] From the viewpoint of improving the removability of the resin mask, the content of component D in the stripper composition of the present disclosure is preferably 1% by mass or more, more preferably 3% by mass or more, and even more preferably 5% by mass or more, and from the same viewpoint, is 15% by mass or less, more preferably 13% by mass or less, and even more preferably 10% by mass or less. When component D is a combination of two or more types, the content of component D refers to the total content thereof.

[0037] <Mass Ratio B / D> From the viewpoint of improving resin mask removability, the mass ratio B / D of component B to component D (content of component B / content of component D) in the stripper composition of the present disclosure is preferably 0.1 or more or 0.3 or more, more preferably 0.7 or more, and even more preferably 1 or more, and from the viewpoint of copper corrosion inhibition, it is preferably 10 or less, more preferably 5 or less, even more preferably 3.2 or less, even more preferably 2.6 or less, and even more preferably 2 or less. More specifically, the mass ratio B / D in the stripper composition of the present disclosure is preferably 0.1 or more and 10 or 0.3 or more and 10 or less, more preferably 0.7 or more and 5 or less, even more preferably 1 or more and 3.2 or less, even more preferably 1 or more and 2.6 or less, and even more preferably 1 or more and 2 or less.

[0038] <Mass Ratio C / D> The mass ratio C / D of Component C to Component D (content of Component C / content of Component D) in the stripper composition of the present disclosure is preferably 0.001 or more, more preferably 0.01 or more, from the viewpoint of improving the removability of the resin mask, and from the same viewpoint, is preferably 0.5 or less, more preferably 0.1 or less. The mass ratio C / D in the stripper composition of the present disclosure is preferably 0.001 or more and 0.5 or less, more preferably 0.01 or more and 0.1 or less.

[0039] (Component E: Water) In one or more embodiments, examples of the water (hereinafter also referred to as "Component E") contained in the cleaning composition of the present disclosure include ion-exchanged water, RO water, distilled water, pure water, and ultrapure water.

[0040] The content of component E in the stripper composition of the present disclosure can be the remainder excluding components A, B, C, D, and optional components described below. Specifically, the content of component E in the stripper composition of the present disclosure is preferably 60% by mass or more, more preferably 65% ​​by mass or more, and even more preferably 70% by mass or more, from the viewpoints of improving resin mask removability and inhibiting copper corrosion, and is preferably 98% by mass or less, more preferably 90% by mass or less, and even more preferably 85% by mass or less, from the viewpoint of improving resin mask removability. The content of component E in the stripper composition of the present disclosure is preferably 60% by mass or more and 98% by mass or less, more preferably 65% ​​by mass or more and 90% by mass or less, and even more preferably 70% by mass or more and 85% by mass or less.

[0041] <Mass Ratio E / A> From the viewpoint of improving the removability of the resin mask, the mass ratio E / A of Component E to Component A (content of Component E / content of Component A) in the stripper composition of the present disclosure is preferably 0.1 or more, more preferably 1 or more, and even more preferably 5 or more, and from the same viewpoint, is preferably 100 or less, more preferably 50 or less, and even more preferably 20 or less. More specifically, the mass ratio E / A in the stripper composition of the present disclosure is preferably 0.1 or more and 100 or less, more preferably 1 or more and 50 or less, and even more preferably 5 or more and 20 or less.

[0042] <Mass Ratio E / B> From the viewpoint of improving the removability of the resin mask, the mass ratio E / B of Component E to Component B (content of Component E / content of Component B) in the stripper composition of the present disclosure is preferably 0.1 or more, more preferably 1 or more, and even more preferably 2 or more, and from the same viewpoint, is preferably 100 or less, more preferably 20 or less, and even more preferably 10 or less. More specifically, the mass ratio E / B in the stripper composition of the present disclosure is preferably 0.1 or more and 100 or less, more preferably 1 or more and 20 or less, and even more preferably 2 or more and 10 or less.

[0043] <Mass Ratio E / C> From the viewpoint of post-cleaning properties, the mass ratio E / C of component E to component C (content of component E / content of component C) in the stripper composition of the present disclosure is preferably 100 or more, more preferably 150 or more, even more preferably 300 or more, and preferably 3000 or less, more preferably 2000 or less, even more preferably 1000 or less, and even more preferably 500 or less. More specifically, the mass ratio E / C in the stripper composition of the present disclosure is preferably 100 or more and 3000 or less, more preferably 150 or more and 2000 or less, even more preferably 300 or more and 1000 or less, and even more preferably 300 or more and 500 or less.

[0044] <Mass Ratio E / D> From the viewpoint of improving the removability of the resin mask, the mass ratio E / D of Component E to Component D (content of Component E / content of Component D) in the stripper composition of the present disclosure is preferably 0.1 or more, more preferably 1 or more, even more preferably 2 or more, and is preferably 100 or less, more preferably 20 or less, and even more preferably 10 or less. More specifically, the mass ratio E / D in the stripper composition of the present disclosure is preferably 0.1 or more and 100 or less, more preferably 1 or more and 20 or less, and even more preferably 2 or more and 10 or less.

[0045] From the viewpoint of improving resin mask removability, in one or more embodiments, the stripper composition of the present disclosure preferably has a mass ratio B / C of 1 or more and 500 or less, and a mass ratio E / C of 100 or more and 3000 or less. Therefore, in another aspect, the present disclosure relates to a resin mask stripper composition containing the following components A, B, C, D, and E, in which the mass ratio B / C of component B to component C is 1 or more and 500 or less, and the mass ratio E / C of component E to component C is 100 or more and 3000 or less: Component A: hydroxide Component B: alkanolamine Component C: two or more azole compounds Component D: organic solvent Component E: water

[0046] (Other Components) The stripping agent composition of the present disclosure may further contain other components as necessary in addition to the above-described Components A to E. Examples of other components include components that can be used in ordinary cleaners, such as alkaline agents other than Components A and B, amines other than Component B, solvents other than Component D, corrosion inhibitors other than Component C, surfactants, chelating agents, thickeners, dispersants, rust inhibitors, polymeric compounds, solubilizers, antioxidants, preservatives, antifoaming agents, and antibacterial agents.

[0047] In one or more embodiments, the stripper composition of the present disclosure can be substantially free of a carboxylic acid or a salt thereof having from 1 to 5 carbon atoms. The content of a carboxylic acid or a salt thereof having from 1 to 5 carbon atoms in the stripper composition of the present disclosure is preferably less than 0.05% by mass, more preferably 0.01% by mass or less, and even more preferably 0% by mass (i.e., not contained). In one or more embodiments, the stripper composition of the present disclosure can be substantially free of a sulfur-containing azole compound. The content of a sulfur-containing azole compound in the stripper composition of the present disclosure is preferably less than 0.1% by mass, more preferably 0.01% by mass or less, and even more preferably 0% by mass (i.e., not contained).

[0048] From the viewpoint of improving removability of the resin mask, the pH of the stripper composition of the present disclosure is preferably 10 or more, more preferably 12 or more, even more preferably 13.3 or more, still more preferably 13.5 or more, and still more preferably 14.0 or more. The pH of the stripper composition is a value at 25°C and can be measured using a pH meter, specifically, by the method described in the examples.

[0049] The stripper composition according to the present disclosure may be a so-called one-component type, in which all components are premixed and supplied to the market, or may be a so-called two-component type, in which components are mixed at the time of use.

[0050] [Method for Producing Stripper Composition] In one or more embodiments, the stripper composition of the present disclosure can be produced by blending the components A to E and, if necessary, the optional components (other components) described above using a known method. For example, the stripper composition of the present disclosure can be produced by blending at least the components A to E. Thus, the present disclosure relates to a method for producing a stripper composition that includes a step of blending at least the components A to E. In this disclosure, the term "blending" includes mixing the components A to E and, if necessary, the optional components (other components) described above simultaneously or in any order. In the method for producing a stripper composition of the present disclosure, the preferred amount of each component can be the same as the preferred content of each component of the stripper composition of the present disclosure described above.

[0051] The stripper composition of the present disclosure may be in a form that is used as is for cleaning (resin mask stripping treatment), or may be prepared as a concentrate to the extent that separation, precipitation, etc. do not occur and storage stability is not impaired. The stripper composition concentrate of the present disclosure can be used by diluting it so that each component has the above-mentioned content (i.e., the content at the time of cleaning) at the time of use. The stripper composition concentrate can also be used by adding each component separately at the time of use. In the present disclosure, "at the time of use" or "at the time of cleaning" of the concentrated stripper composition refers to the state in which the stripper composition concentrate is diluted.

[0052] [Object to be cleaned] In one or more embodiments, the object to be cleaned is a substrate having a copper-containing metal layer and a resin mask on its surface. In one or more embodiments, the substrate having a copper-containing metal layer and a resin mask on its surface has undergone at least one of soldering and plating using a resin mask. In one or more embodiments, the copper-containing metal layer is a copper plating layer. The copper plating layer can be formed, for example, by electroless copper plating. In one or more embodiments, the copper-containing metal layer is used as metal wiring. The thickness of the copper-containing metal layer is, for example, 3 μm to 30 μm. Examples of the substrate include an insulating plate or film.

[0053] In one or more embodiments, the object to be cleaned may be an electronic component having a copper-containing metal portion and a resin mask on its surface, or a manufacturing intermediate thereof. In one or more embodiments, the object may be a manufacturing intermediate produced in a modified semi-additive process (MSAP). Examples of electronic components include at least one component selected from a printed circuit board, a wafer, and a metal plate such as a copper plate or an aluminum plate. The manufacturing intermediate is an intermediate product produced in the manufacturing process of an electronic component, including an intermediate product after a resin mask treatment. Specific examples of objects to be cleaned include electronic components having wiring, connection terminals, etc. formed on the surface of a substrate through at least one of soldering using a resin mask and plating (copper plating, aluminum plating, nickel plating, tin plating, etc.). In this disclosure, soldering refers to applying solder to the resin mask-free portions of the substrate and forming solder bumps by heating. In this disclosure, plating refers to performing at least one plating treatment selected from copper plating, aluminum plating, nickel plating, and tin plating on the resin mask-free portions of the substrate. The resin mask-free portion refers to a portion of a resist pattern (a patterned resin mask) formed by developing a resin mask laminated on a substrate. Accordingly, in one aspect, the present disclosure relates to use of the cleaning composition of the present disclosure as a cleaning agent in the production of electronic components.

[0054] In one or more embodiments, the object to be cleaned is a substrate having a resist pattern (a patterned resin mask) formed by developing a resin mask laminated on the substrate, which has undergone at least one of soldering and plating. For example, the object to be cleaned may be a substrate having a resin mask-existing portion where a hardened resist layer is formed on the substrate, and a solder bump or a plating layer formed in a resin mask-free portion.

[0055] The resin mask may be, for example, a negative resin mask or a positive resin mask. In the present disclosure, a negative resin mask is formed using a negative resist, and examples thereof include a negative resist layer that has been subjected to exposure and / or development. In the present disclosure, a positive resin mask is formed using a positive resist, and examples thereof include a positive resist layer that has been subjected to exposure and / or development.

[0056] [Substrate Cleaning Method] In one aspect, the present disclosure relates to a substrate cleaning method (hereinafter also referred to as the "cleaning method of the present disclosure") comprising stripping a resin mask from a substrate (object to be cleaned) having a copper-containing metal layer and a resin mask on its surface using a stripper composition of the present disclosure. Examples of objects to be cleaned in the stripping include the objects described above. In one or more embodiments, the stripping comprises contacting the object to be cleaned with the stripper composition of the present disclosure. The cleaning method of the present disclosure can efficiently remove (stripped) the resin mask while reducing residues in cleaning after the stripping (improving the low level of residues in post-cleaning). In one or more embodiments, the cleaning method of the present disclosure can efficiently remove (stripped) the resin mask while suppressing copper corrosion and discoloration when stripping the resin mask from a substrate having a copper-containing metal layer and a resin mask on its surface. Furthermore, by using the cleaning method of the present disclosure to clean electronic components such as electronic circuit boards having a resin mask, high-quality electronic components can be obtained with a high yield.

[0057] Examples of a method for peeling a resin mask from an object to be cleaned using the stripper composition of the present disclosure, or a method for contacting an object to be cleaned with the stripper composition of the present disclosure, include a method of contacting the object by immersing the object in a cleaning bath containing the stripper composition, a method of contacting the object by spraying the stripper composition (shower method), and an ultrasonic cleaning method of irradiating the object with ultrasonic waves during immersion. The stripper composition of the present disclosure can be used for cleaning as is without dilution. Examples of objects to be cleaned include objects to be cleaned described below. The immersion time can be, for example, from 1 minute to 10 minutes, and even from 3 minutes to 6 minutes. The spray time can be, for example, from 1 minute to 10 minutes, and even from 3 minutes to 6 minutes.

[0058] In the cleaning method of the present disclosure, ultrasonic waves are preferably applied when the stripper composition of the present disclosure comes into contact with the object to be cleaned, since the stripping and cleaning power of the stripper composition of the present disclosure can be easily exerted, and the ultrasonic waves are more preferably relatively high frequency. From the same viewpoint, the ultrasonic irradiation conditions are, for example, preferably 26 to 72 kHz and 80 to 1500 W, and more preferably 36 to 72 kHz and 80 to 1500 W.

[0059] In the cleaning method of the present disclosure, the temperature of the stripper composition is preferably 40°C or higher, more preferably 50°C or higher, from the viewpoint of making it easier for the stripper composition of the present disclosure to exert its stripping and cleaning power, and is preferably 70°C or lower, more preferably 60°C or lower, from the viewpoint of reducing the effect on the organic resin-containing substrate.

[0060] In one or more embodiments of the cleaning method of the present disclosure, a post-cleaning may be further performed on the substrate (object to be cleaned) after the object to be cleaned has been contacted with the stripper composition of the present disclosure to strip the resin mask. That is, the cleaning method of the present disclosure may further include cleaning the substrate after the stripping. In one or more embodiments, the post-cleaning includes contacting the stripped substrate with a cleaning agent. Examples of cleaning methods for the post-cleaning include immersion cleaning, ultrasonic cleaning, vibration cleaning, and spray cleaning. Examples of cleaning times for the post-cleaning include 1 second or more and 60 seconds or less, more preferably 20 seconds or more and 30 seconds or less. Examples of the temperature of the cleaning agent used in the post-cleaning include 20°C or more and 40°C or less, more preferably 25°C or more and 35°C or less.

[0061] In one or more embodiments, the cleaning method of the present disclosure can further include rinsing with water and drying after contacting the object to be cleaned with the stripper composition of the present disclosure (after stripping) or after post-cleaning. Examples of rinsing methods include rinsing with running water. Examples of drying methods include air blow drying. In one or more embodiments, the cleaning method of the present disclosure can include rinsing with water after contacting the object to be cleaned with the stripper composition of the present disclosure (after stripping) or after post-cleaning.

[0062] The post-washing is preferably an acid wash. Examples of the wash agent used for the acid wash include sulfuric acid, nitric acid, and aqueous solutions of these diluted with water.

[0063] [Substrate] In one aspect, the present disclosure relates to a substrate (hereinafter also referred to as "substrate of the present disclosure") manufactured using the cleaning method of the present disclosure. The substrate of the present disclosure enables the manufacture of electronic components described below, and in one or more embodiments, enables the manufacture of highly reliable electronic components.

[0064] [Method for Manufacturing Electronic Components] In one aspect, the present disclosure relates to a method for manufacturing electronic components (hereinafter also referred to as the "method for manufacturing electronic components of the present disclosure") that includes the cleaning method of the present disclosure. In one or more embodiments, the method for manufacturing electronic components of the present disclosure is a method for manufacturing electronic components that includes a step of cleaning a substrate (object to be cleaned) having a copper-containing metal layer and a resin mask on its surface using the cleaning method of the present disclosure (hereinafter also referred to as the "cleaning step"). Examples of cleaning methods used in the cleaning step include methods similar to the cleaning method of the present disclosure described above. Examples of objects to be cleaned include the objects described above. In one or more embodiments, the method for manufacturing electronic components of the present disclosure may include, before the cleaning step, performing at least one of soldering and plating using a resin mask on at least one electronic component selected from a printed circuit board, a wafer, and a metal plate. In one or more embodiments, the method for manufacturing electronic components of the present disclosure may include, after the cleaning step, a step of etching the copper-containing metal layer. According to the method for producing electronic components of the present disclosure, in one or more embodiments, by using the cleaning method of the present disclosure, a substrate can be obtained that can reduce residues during cleaning after peeling off the resin mask (improving low residue during post-cleaning), thereby enabling the production of highly reliable electronic components. Furthermore, in one or more embodiments, when peeling off the resin mask from a substrate having a copper-containing metal layer and a resin mask on its surface, the resin mask can be efficiently removed (peeled off) while suppressing copper corrosion and discoloration, thereby enabling the production of more reliable electronic components. Furthermore, by using the cleaning method of the present disclosure, it is easy to remove the resin mask attached to the electronic components, thereby shortening the cleaning time and improving the production efficiency of electronic components.

[0065] [Kit] In one aspect, the present disclosure relates to a kit (hereinafter also referred to as the "kit of the present disclosure") for use in either the cleaning method of the present disclosure or the method for manufacturing an electronic component of the present disclosure. In one or more embodiments, the kit of the present disclosure is a kit for producing the stripper composition of the present disclosure. The kit of the present disclosure can provide a resin mask stripper composition that can efficiently remove (stripping) a resin mask while reducing residues in cleaning after stripping the resin mask (improving low residue levels in post-cleaning). One embodiment of the kit of the present disclosure is a kit (two-component stripper composition) that contains a first liquid and a second liquid in an unmixed state, and in which Component A, Component B, Component C, Component D, and Component E are each contained in either or both of the first liquid and the second liquid, and the first liquid and the second liquid are mixed during use. Each of the first liquid and the second liquid may contain the optional components (other components) described above as necessary.

[0066] The present disclosure further relates to one or more of the following embodiments. <1> A resin mask remover composition containing the following components A, B, C, D, and E: Component A: hydroxide; Component B: alkanolamine; Component C: two or more azole compounds; Component D: organic solvent; and Component E: water. <2> The resin mask remover composition according to <1>, in which component C contains at least one compound having an imidazole skeleton. <3> The resin mask remover composition according to <1> or <2>, in which component C consists of two types of compounds having an imidazole skeleton, or two or more types of compounds having an imidazole skeleton, or a combination of two or more compounds selected from compounds having an imidazole skeleton and compounds having a triazole skeleton. <4> The resin mask remover composition according to <2> or <3>, in which the compound having an imidazole skeleton is at least one selected from benzimidazole (BI), 5-methylbenzimidazole (MBI), and 5,6-dimethylbenzimidazole (DMBI). <5> The resin mask remover composition according to <3>, wherein the compound having a triazole skeleton is at least one selected from benzotriazole (BTA), 1-methylbenzotriazole (MBTA), tolyltriazole (TTA), and 5,6-dimethylbenzotriazole (DMBTA). <6> The resin mask remover composition according to any one of <1> to <5>, wherein the content of component C is 0.05% by mass or more, or 0.07% by mass or more, or 0.1% by mass or more, and 0.5% by mass or less, or 0.4% by mass or less, or 0.3% by mass or less. <7> The resin mask remover composition according to any one of <1> to <6>, wherein the mass ratio E / C of component E to component C is 100 or more, or 150 or more, or 300 or more, and 3000 or less, or 2000 or less, or 1000 or less, or 500 or less. <8> The resin mask remover composition according to any one of <1> to <7>, wherein the mass ratio B / C of component B to component C (content of component B / content of component C) is 1 or more, or 20 or more, or 40 or more, or 50 or more, and is preferably 500 or less, preferably 200 or less, and 150 or less.<9> The resin mask remover composition according to any one of <1> to <8>, wherein the mass ratio A / C of component A to component C is 10 or more, or 15 or more, and 200 or less, or 100 or less, or 50 or less, or 30 or less. <10> The resin mask remover composition according to any one of <1> to <9>, wherein, when two or more types of component C are c1 and c2, the mass ratio c1 / c2 of c1 to c2 is 0.02 or more, or 0.05 or more, or 0.1 or more, and 50 or less, or 20 or less, or 10 or less. <11> The resin mask remover composition according to any one of <1> to <11>, wherein component B is at least one selected from monoethanolamine (MEA), monoisopropanolamine, N-methylmonoethanolamine, N-methylisopropanolamine, N-ethylmonoethanolamine, N-ethylisopropanolamine, diethanolamine, diisopropanolamine, N-dimethylmonoethanolamine, N-dimethylmonoisopropanolamine, N-methyldiethanolamine, N-methyldiisopropanolamine, N-diethylmonoethanolamine, N-diethylmonoisopropanolamine, N-ethyldiethanolamine, N-ethyldiisopropanolamine, N-(β-aminoethyl)ethanolamine, N-(β-aminoethyl)isopropanolamine, N-(β-aminoethyl)diethanolamine, and N-(β-aminoethyl)diisopropanolamine. <12> The resin mask remover composition according to any one of <1> to <11>, wherein component D is one or more selected from diethylene glycol monobutyl ether (BDG), ethylene glycol monobenzyl ether, diethylene glycol monohexyl ether, ethylene glycol monophenyl ether, diethylene glycol diethyl ether, and acetophenone. <13> The resin mask remover composition according to any one of <1> to <12>, wherein the mass ratio B / D of component B to component D is 0.1 or more, or 0.3 or more, or 0.7 or more, or 1 or more, and is 10 or less, or 5 or less, or 3.2 or less, or 2.6 or less, or 2 or less.<14> The resin mask remover composition according to any one of <1> to <13>, wherein the content of component A is 1% by mass or more, or 2% by mass or more, or 4% by mass or more, and 15% by mass or less, or 10% by mass or less, or 8% by mass or less. <15> The resin mask remover composition according to any one of <1> to <14>, wherein the content of component B is 1% by mass or more, or 6% by mass or more, or 10% by mass or more, and 18% by mass or less, or 16% by mass or less, or 14% by mass or less. <16> The resin mask remover composition according to any one of <1> to <15>, wherein the content of component D is 1% by mass or more, or 3% by mass or more, or 5% by mass or more, and 15% by mass or less, or 13% by mass or less, or 10% by mass or less. <17> The resin mask remover composition according to any one of <1> to <16>, wherein the content of component E is 60% by mass or more, or 65% by mass or more, or 70% by mass or more, and 98% by mass or less, or 90% by mass or less, or 85% by mass or less. <18> The resin mask remover composition according to any one of <1> to <17>, wherein the pH is 10 or more, or 12 or more, or 13.3 or more, or 13.5 or more, or 14.0 or more. <19> A resin mask remover composition containing the following components A, B, C, D, and E, wherein the mass ratio B / C of component B to component C is 1 or more and 500 or less, and the mass ratio E / C of component E to component C is 100 or more and 3,000 or less. Component A: hydroxide Component B: alkanolamine Component C: two or more azole compounds Component D: organic solvent Component E: water <20> A method for cleaning a substrate, comprising stripping a resin mask from a substrate having a copper-containing metal layer and a resin mask on its surface, using the resin mask stripper composition according to any one of <1> to <19>. <21> The method for cleaning a substrate according to <20>, further comprising cleaning the substrate after the stripping. <22> A method for producing an electronic component, comprising the step of cleaning a substrate having a copper-containing metal layer and a resin mask on its surface, using the cleaning method according to <20> or <21>.

[0067] The present disclosure will be specifically described below using examples, but the present disclosure is not limited to these examples in any way.

[0068] 1. Preparation of Release Agent Compositions of Examples 1 to 8 and Comparative Examples 1 to 3 The components shown in Table 1 were blended in the amounts (mass %, active ingredient) shown in Table 1 and mixed by stirring to prepare the release agent compositions of Examples 1 to 8 and Comparative Examples 1 to 3.

[0069] The following materials were used to prepare each stripper composition. (Component A) TMAH: tetramethylammonium hydroxide [manufactured by Showa Denko K.K., concentration 25%] KOH: potassium hydroxide [manufactured by Kanto Chemical Co., Ltd., concentration 48%] (Component B) MEA: monoethanolamine [manufactured by Nippon Shokubai Co., Ltd.] (Component C) BI: benzimidazole [manufactured by Tokyo Chemical Industry Co., Ltd.] DMBI: 5,6-dimethylbenzimidazole [manufactured by Tokyo Chemical Industry Co., Ltd.] TTA: tolyltriazole [manufactured by Fujifilm Wako Pure Chemical Industries, Ltd.] (Component D) BDG: butyl diglycol [manufactured by Nippon Nyukazai Co., Ltd., diethylene glycol monobutyl ether] (Component E) Water [pure water of 1 μS / cm or less produced using a water purification system G-10DSTSET manufactured by Organo Corporation]

[0070] [Method for measuring pH of stripper composition] The pH of the stripper composition at 25°C is a value measured using a pH meter (HM-30G, manufactured by Toa Denpa Kogyo Co., Ltd.), and is the value measured 3 minutes after immersing the electrode of the pH meter in the stripper composition.

[0071] 2. Evaluation of the Stripper Compositions of Examples 1 to 8 and Comparative Examples 1 to 3 The following cleaning tests were carried out using the following test pieces, and the prepared stripper compositions of Examples 1 to 8 and Comparative Examples 1 to 3 were evaluated for their resin mask removability and post-cleaning ability.

[0072] <Test Piece> Test pieces (50 mm x 50 mm) consisting of solid substrates with a copper-plated layer (thickness: 3 μm) on their surfaces were obtained by electroless plating of an insulating substrate. <Cleaning Test> 2.5 L of each stripper composition was prepared and heated to 60°C. The composition was circulated in a box-type spray washer equipped with a full-cone nozzle (J020, manufactured by Ikeuchi Co., Ltd.) and sprayed onto copper-plated test pieces for 4 minutes (pressure: 0.03 MPa, spray distance: 80 mm). The test pieces were then rinsed for 30 seconds in a cleaning bottle containing pure water and finally dried with nitrogen blowing. Visual observation of the test pieces after the cleaning test confirmed that the stripper compositions of Examples 1 to 8 and Comparative Examples 1 to 3 all exhibited excellent resin mask removability. Furthermore, no copper discoloration was observed on the test pieces after the cleaning test using the stripper compositions of Examples 1 to 8, confirming that the stripper compositions of Examples 1 to 8 had a copper corrosion-inhibiting effect.

[0073] [Evaluation of Post-Cleaning Properties] After rinsing the test piece subjected to the cleaning test with a wash bottle containing pure water for 30 seconds, 2.5 L of 10% sulfuric acid solution (manufactured by Fujifilm Wako Pure Chemical Industries, Ltd.) at room temperature was used to spray the test piece for 10 seconds (pressure: 0.03 MPa, spray distance: 80 mm) while circulating it using a box-type spray washer equipped with a full-cone nozzle (J020, manufactured by Ikeuchi Co., Ltd.) (acid cleaning). The test piece was then rinsed again with a wash bottle containing pure water for 30 seconds and finally dried with nitrogen blowing. The surface element concentration (N / Cu ratio) of the test piece after the cleaning test and acid cleaning was measured using an X-ray photoelectron analyzer (PHI Quantera SXM manufactured by ULVAC-PHI, Inc.). Post-cleaning properties were determined by comparing the surface element concentration (N / Cu ratio) of the test piece with that of an untreated test piece. A lower N / Cu ratio compared to an untreated test piece indicates better post-cleaning properties. The results are shown in Table 1.

[0074]

[0075] As shown in Table 1, Examples 1 to 8, which used two types of azole compounds, were found to have superior post-cleaning properties compared to Comparative Examples 1 to 3, which used only one type of azole compound.

[0076] According to the present disclosure, it is possible to provide a stripper composition and a substrate cleaning method that, when stripping a resin mask from a substrate having a copper-containing metal layer and a resin mask on its surface, can efficiently remove (stripping) the resin mask while reducing residues in cleaning after the resin mask is stripped (improving the low level of residues in post-cleaning). Furthermore, by using the resin mask stripper composition of the present disclosure, it is possible to improve the performance and reliability of manufactured electronic components, and to improve the productivity of semiconductor devices.

Claims

1. A resin mask remover composition containing the following components A, B, C, D, and E: Component A: hydroxide; Component B: alkanolamine; Component C: two or more azole compounds; Component D: organic solvent; and Component E: water.

2. The resin mask remover composition according to claim 1, wherein component C comprises at least one compound having an imidazole skeleton.

3. The resin mask remover composition according to claim 1 or 2, wherein component C comprises two or more compounds having an imidazole skeleton.

4. A resin mask remover composition according to any one of claims 1 to 3, wherein the content of component C is 0.05% by mass or more and 0.5% by mass or less.

5. A resin mask remover composition according to any one of claims 1 to 4, wherein the mass ratio E / C of component E to component C is 100 or more and 3,000 or less.

6. A resin mask remover composition according to any one of claims 1 to 5, wherein the mass ratio B / C of component B to component C is 1 or more and 500 or less.

7. A resin mask remover composition according to any one of claims 1 to 6, wherein the mass ratio A / C of component A to component C is 10 or more and 200 or less.

8. A resin mask remover composition according to any one of claims 1 to 7, wherein when two or more types of C components are designated as c1 and c2, the mass ratio c1 / c2 of c1 to c2 is 0.02 or more and 50 or less.

9. A resin mask remover composition according to any one of claims 1 to 8, wherein the mass ratio B / D of component B to component D is 0.1 or more and 10 or less.

10. A resin mask remover composition according to any one of claims 1 to 9, wherein the content of component E is 60% by mass or more and 98% by mass or less.

11. The resin mask remover composition according to any one of claims 1 to 10, which has a pH of 10 or more.

12. A resin mask remover composition containing the following components A, B, C, D, and E, wherein the mass ratio B / C of component B to component C is 1 or more and 500 or less, and the mass ratio E / C of component E to component C is 100 or more and 3000 or less. Component A: hydroxide; Component B: alkanolamine; Component C: two or more azole compounds; Component D: organic solvent; Component E: water.

13. A method for cleaning a substrate, comprising stripping a resin mask from a substrate having a copper-containing metal layer and a resin mask on its surface using the resin mask stripper composition according to any one of claims 1 to 12.

14. The method of cleaning a substrate according to claim 13, further comprising cleaning the substrate after said stripping.

15. A method for manufacturing electronic components, comprising the step of cleaning a substrate having a copper-containing metal layer and a resin mask on its surface using the cleaning method according to claim 13 or 14.

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