Substrate processing device and operation method thereof

Abstract

The present disclosure relates to a substrate processing device for performing temperature control on a semiconductor substrate and an operation method thereof. A substrate processing device for performing temperature control on a semiconductor substrate according to an embodiment disclosed herein comprises: a support chuck including a heating coil; a support having one side accommodated in a groove formed in a central portion of the support chuck; a plurality of light absorbing units disposed on one surface of the support chuck; and a plurality of lasers that emit laser light to the plurality of light absorbing units, wherein the substrate processing device, when operating in a first heating mode corresponding to a reference temperature, can control the temperature of the support chuck on the basis of thermal energy generated by the heating coil, and when operating in a second heating mode, can control the temperature of the support chuck on the basis of the thermal energy generated by the heating coil and first light energy absorbed by the plurality of light absorbing units.

Description

Substrate processing device and its operating method

[0001] The present disclosure relates to semiconductor processing equipment, and more specifically, to a substrate processing device that performs temperature control on a semiconductor substrate and an operating method thereof.

[0002] Semiconductor integrated circuits are typically very small and thin silicon chips, but they are comprised of various electronic components. To create a single semiconductor chip, they undergo a variety of manufacturing processes, including photolithography, etching, deposition, reflow, and packaging. Some semiconductor manufacturing processes require a heating process for the substrate, and this is typically achieved by heating the chuck that supports the semiconductor substrate.

[0003] Conventional semiconductor manufacturing processes utilize either a fluid-flowing tube embedded within the chuck or a heat source to heat the chuck. This method, utilizing a fluid-flowing tube embedded within the chuck, can increase the chuck temperature by controlling the flow rate or temperature of the fluid flowing through the tube. Conversely, methods utilizing a heat source embedded within the chuck can increase the chuck temperature by supplying power to the heat source. However, these methods have the disadvantage of requiring a relatively long time to reach the target temperature for semiconductor processing and consuming significant power.

[0004] In this regard, reference may be made to Korean Patent Publication No. 10-2006-0061198A and Korean Patent Publication No. 10-2020-0096747A.

[0005] The present disclosure aims to provide a substrate processing device for performing temperature control on a semiconductor substrate and an operating method thereof.

[0006] The present disclosure aims to provide a substrate processing device and an operating method thereof that perform a hybrid heating process on a semiconductor substrate based on a heating coil and a laser.

[0007] The present disclosure aims to provide a substrate processing device and an operating method thereof that achieves a stepwise temperature increase through laser output control.

[0008] The problems to be solved by the present disclosure are not limited to the problems described above, and other problems not mentioned will be clearly understood by those skilled in the art from the description below.

[0009] In one embodiment of the present disclosure, a substrate processing device for performing temperature control on a semiconductor substrate includes a support chuck including a heating coil, a support having one side accommodated in a groove formed in a central portion of the support chuck, a plurality of light absorbing portions arranged on one surface of the support chuck, and a plurality of lasers for irradiating laser light onto the plurality of light absorbing portions, wherein the substrate processing device controls the temperature of the support chuck based on heat energy generated by the heating coil when operating in a first heating mode corresponding to a reference temperature, and switches the operation mode to a second heating mode corresponding to a first target temperature for performing a first process on the semiconductor substrate supported by the support chuck when the temperature of the support chuck is determined to correspond to the reference temperature, and controls the temperature of the support chuck based on heat energy generated by the heating coil and first light energy absorbed by the plurality of light absorbing portions when operating in the second heating mode.

[0010] For example, when the substrate processing device operates in the second heating mode, all of the plurality of lasers may be turned on.

[0011] For example, the substrate processing device may be configured such that each of the plurality of lasers can irradiate laser light to at least one light absorbing portion corresponding to each of the plurality of lasers among the plurality of light absorbing portions.

[0012] For example, when the substrate processing device operates in the first heating mode, the substrate processing device can supply a first power to the heating coil so that the temperature of the support chuck reaches the reference temperature, and when it is confirmed that the temperature of the support chuck has reached the reference temperature, supply a second power lower than the first power so that the temperature of the support chuck maintains the reference temperature.

[0013] For example, when the substrate processing device operates in a second heating mode, each of the plurality of lasers may irradiate laser light corresponding to a first output so that the temperature of the support chuck reaches the first target temperature, and when it is confirmed that the temperature of the support chuck has reached the first target temperature, irradiate laser light corresponding to a second output lower than the first output so that the temperature of the support chuck maintains the first target temperature.

[0014] For example, when it is confirmed that the first process for the semiconductor substrate is completed, the substrate processing device can switch the operation mode from the second heating mode to the first heating mode.

[0015] For example, when the temperature of the support chuck is confirmed to correspond to the first target temperature, the substrate processing device switches the operation mode to a third heating mode corresponding to the second target temperature for performing a second process on the semiconductor substrate, and when operating in the third heating mode, the temperature of the support chuck is controlled based on the heat energy generated by the heating coil and the second light energy absorbed by the plurality of light absorbing parts, and the first light energy may be formed by a first laser set composed of some of the plurality of lasers, and the second light energy may be formed by a second laser set composed of the first laser set and the remainder of the plurality of lasers excluding the first laser set.

[0016] For example, the reference temperature may be set higher than room temperature, lower than the first target temperature, and the first target temperature may be set lower than the second target temperature.

[0017] In an operating method of a substrate processing device for performing temperature control on a semiconductor substrate according to an embodiment of the present disclosure, the operating method may include a step of heating a support chuck based on thermal energy generated by a heating coil, a step of placing the semiconductor substrate on the support chuck when the temperature of the support chuck reaches a reference temperature, a step of irradiating laser light using a plurality of lasers to a plurality of light absorbing portions arranged on one surface of the support chuck, and a step of heating the support chuck so that the temperature of the support chuck reaches a target temperature based on the light energy absorbed by the plurality of light absorbing portions.

[0018] According to one embodiment of the present disclosure, a substrate processing system includes a substrate processing device that performs temperature control for a semiconductor substrate and an electronic device that controls the substrate processing device, wherein the substrate processing device includes a support chuck including a heating coil, a support having one side accommodated in a groove formed in a central portion of the support chuck, a plurality of light absorbing portions arranged on one surface of the support chuck, and a plurality of lasers that irradiate laser light to the plurality of light absorbing portions, wherein the electronic device includes a transceiver, a memory that stores instructions, and a processor, wherein the processor connected to the transceiver and the memory controls the substrate processing device so that the temperature of the support chuck reaches the reference temperature based on the heat energy generated by the heating coil when the substrate processing device operates in a first heating mode corresponding to a reference temperature, and controls the substrate processing device so that the operation mode is switched to a second heating mode corresponding to a target temperature for performing a process for the semiconductor substrate supported by the support chuck when the temperature of the support chuck is determined to correspond to the reference temperature, and when the substrate processing device operates in the second heating mode, the heating The substrate processing device can be controlled so that the temperature of the support reaches a target temperature based on the heat energy generated by the coil and the first light energy absorbed by the plurality of light absorbing portions.

[0019] According to an embodiment of the present disclosure, by performing a hybrid heating process on a semiconductor substrate based on a heating coil and a laser, a target temperature for performing a semiconductor manufacturing process can be reached in a relatively short time, and power consumption can also be reduced.

[0020] The present disclosure can prevent unnecessary power consumption during a semiconductor manufacturing process and achieve a stable temperature gradient for a semiconductor substrate by controlling the output of a laser to achieve a stepwise temperature increase.

[0021] The effects according to the present disclosure are not limited to the effects described above, and other effects not mentioned will be clearly understood by those skilled in the art from the description below.

[0022] FIG. 1 is a block diagram illustrating a substrate processing system according to an embodiment of the present disclosure.

[0023] FIG. 2 is a cross-sectional view of a substrate processing device according to an embodiment of the present disclosure.

[0024] FIG. 3a and FIG. 3b are drawings for explaining the structure of a support according to an embodiment of the present disclosure.

[0025] FIG. 4 is a flowchart for explaining an operation method of a substrate processing device according to an embodiment of the present disclosure.

[0026] FIG. 5A is a drawing for explaining the operating principle of a substrate processing device operating in a first heating mode according to one embodiment of the present disclosure.

[0027] FIG. 5b is a drawing for explaining the operating principle of a substrate processing device operating in a second heating mode according to one embodiment of the present disclosure.

[0028] FIG. 6 is a drawing showing a temperature change according to a heating process operation of a substrate processing device according to an embodiment of the present disclosure.

[0029] FIG. 7 is a flowchart for explaining an operation method of a substrate processing device according to another embodiment of the present disclosure.

[0030] FIG. 8A is a drawing for explaining the operating principle of a substrate processing device operating in a first heating mode according to another embodiment of the present disclosure.

[0031] FIG. 8b is a drawing for explaining the operating principle of a substrate processing device operating in a second heating mode according to another embodiment of the present disclosure.

[0032] FIG. 8c is a drawing for explaining the operating principle of a substrate processing device operating in a third heating mode according to another embodiment of the present disclosure.

[0033] FIG. 9 is a drawing showing temperature changes according to a heating process operation of a substrate processing device according to another embodiment of the present disclosure.

[0034] FIG. 10 is a block diagram illustrating a configuration of an electronic device according to an embodiment of the present disclosure.

[0035] FIG. 11 is a block diagram illustrating an electronic device according to an embodiment of the present disclosure.

[0036] Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the contents described in the attached drawings. However, the present invention is not limited or restricted by the exemplary embodiments. Unless otherwise defined, all terms (including technical and scientific terms) used in this specification shall be used with meanings that can be commonly understood by those of ordinary skill in the technical field to which this disclosure pertains. However, this may vary depending on the intentions of those skilled in the art, precedents, the emergence of new technologies, etc.

[0037] Additionally, terms defined in commonly used dictionaries should not be interpreted ideally or excessively unless explicitly and specifically defined otherwise. In certain cases, terms may be arbitrarily selected by the applicant, in which case their meanings will be described in detail in the relevant description. Therefore, the terms used in this disclosure should be defined based on their meaning and the overall content of this disclosure, rather than simply their names.

[0038] Throughout this specification, when a part is said to "include" a certain component, this does not mean that other components may be included, but rather that other components may be excluded, unless specifically stated otherwise. Furthermore, the singular forms used herein also include plural forms unless specifically stated otherwise. Furthermore, the expression "at least one of a, b, and / or c" used throughout this specification can encompass "a alone," "b alone," "c alone," "a and b," "a and c," "b and c," or "all of a, b, and c."

[0039] Meanwhile, terms such as "first and / or second" used in this specification may be used to describe various components, but are only used to distinguish one component from another and are not intended to be limited to the components referred to by those terms. For example, without departing from the scope of the present invention, the first component may be referred to as the second component, and the second component may also be referred to as the first component.

[0040] In addition, terms such as “unit”, “module”, etc. described in this specification mean a unit that processes at least one function or operation, which may be implemented by hardware or software, or a combination of hardware and software. In addition, embodiments of the present disclosure in this specification may be represented by functional block configurations and various processing steps. These functional blocks may be implemented by various numbers of hardware or / and software configurations that execute specific functions. For example, embodiments of the present disclosure may employ direct circuit configurations such as memory, processing, logic, look-up tables, etc. that may execute various functions under the control of one or more microprocessors or other control devices.

[0041] Hereinafter, various embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. In describing the embodiments, descriptions of technical details that are well known in the technical field to which the present invention pertains and are not directly related to the present invention will be omitted. This is to convey the gist of the present invention more clearly without obscuring unnecessary explanation. For the same reason, some components in the accompanying drawings are exaggerated, omitted, or schematically depicted. Furthermore, the size of each component does not entirely reflect the actual size. Throughout this specification, the same reference numerals may refer to the same or corresponding components.

[0042] FIG. 1 is a block diagram illustrating a substrate processing system (10) according to an embodiment of the present disclosure.

[0043] Referring to FIG. 1, a substrate processing system (10) according to an embodiment of the present disclosure may include a substrate processing device (110) and an electronic device (120).

[0044] A substrate processing device (110) according to an embodiment of the present disclosure may be included in semiconductor processing equipment for performing a semiconductor process on a substrate placed on the substrate processing device (110). In an embodiment of the present disclosure, a substrate that may be placed on the substrate processing device (110) may be at least one of a semiconductor wafer, a mask, a glass substrate, and a liquid crystal display (LCD).

[0045] According to an embodiment of the present disclosure, the substrate processing device (110) may be a device that performs temperature control on a substrate during a semiconductor chip manufacturing process for producing a semiconductor chip, and more specifically, may be a device that performs a heating process that requires a temperature increase on the substrate. For example, the substrate processing device (110) may be a device that performs a heating process on a substrate during at least one of a reflow process, a plasma process, a package process, a reflow process, an etching process, a deposition process, a photo process, and a heat treatment process for producing a semiconductor chip. The substrate processing device (110) according to an embodiment of the present disclosure may include a laser facility for performing the heating process.

[0046] An electronic device (120) according to an embodiment of the present disclosure may control the operation of a substrate processing device (110) based on semiconductor process recipe information. In some embodiments, the semiconductor process recipe information may be stored in a memory included in the electronic device (120), and the semiconductor process recipe information may include information related to a semiconductor process performed in the substrate processing device (110). Specifically, the semiconductor process recipe information may include at least a portion of semiconductor process procedure information performed in the substrate processing device (110), specification information on components included in the substrate processing device (110) (e.g., thermal conductivity information of a support, heat generation capacity information of a heating coil, output wavelength range information of a laser, light absorption rate information of a light absorbing portion, etc.), and temperature information for a heating process. The electronic device (120) can monitor the operating status of the substrate processing device (110), process necessary information corresponding to the operating status of the substrate processing device (110) and semiconductor process recipe information, and control at least one component included in the substrate processing device (110) to control the temperature of the substrate processing device (110).

[0047] Meanwhile, in FIG. 1, the substrate processing device (110) and the electronic device (120) are illustrated as separate components, but this is only one embodiment according to the present disclosure and does not limit the form of the substrate processing system (10) according to the present disclosure. Specifically, the substrate processing device (110) and the electronic device (120) may be electrically connected or wirelessly connected as illustrated in FIG. 1. When the substrate processing device (110) and the electronic device (120) are wirelessly connected, each of the substrate processing device (110) and the electronic device (120) may include a communication module for communication. Alternatively, the electronic device (120) may be implemented by being included in the substrate processing device (110).

[0048] The substrate processing system (10) according to the present disclosure can perform a hybrid heating process for a semiconductor substrate based on a heating coil and a laser facility. More specifically, the substrate processing system (10) can operate in a first heating mode for raising the temperature to a reference temperature and maintaining the reference temperature based on the heating coil, and can operate in a second heating mode for raising the temperature to a target temperature and maintaining the target temperature based on the laser facility. Through this, the substrate processing system (10) can reach the target temperature for performing a semiconductor manufacturing process in a relatively short time, and can also reduce power consumption. Meanwhile, the substrate processing system (10) according to the present disclosure can prevent unnecessary power consumption during the semiconductor manufacturing process and ensure a stable temperature gradient for the semiconductor substrate by promoting a stepwise temperature increase through output control of the laser facility. The specific configuration, structure, and operation method of the substrate processing system (10) according to an embodiment of the present disclosure will be described in detail with reference to FIGS. 2 to 11, which will be described later.

[0049] Meanwhile, in FIG. 1, the substrate processing system (10) is illustrated as including one substrate processing device (110) and an electronic device (120), but this is only one embodiment according to the present disclosure and does not limit the form of the substrate processing system (10) according to the present disclosure. Specifically, in some embodiments, the substrate processing system (10) may include a plurality of substrate processing devices (110) and at least one electronic device (120). When the substrate processing system (10) includes a plurality of substrate processing devices (110) and one electronic device (120), the plurality of substrate processing devices (110) may be controlled by one electronic device (120), and when the substrate processing system (10) includes a plurality of substrate processing devices (110) and a plurality of electronic devices (120), each of the plurality of substrate processing devices (110) may be controlled by an electronic device (120) corresponding to each of the plurality of substrate processing devices (110).

[0050] FIG. 2 is a cross-sectional view of a substrate processing device (200) according to an embodiment of the present disclosure.

[0051] The substrate processing device (200) illustrated in FIG. 2 may correspond to the substrate processing device (110, see FIG. 1) illustrated in FIG. 1 described above, and referring to FIG. 2, the substrate processing device (200) according to an embodiment of the present disclosure may include a support (210), a support (220), a plurality of lasers (230_1, 230_2, 230_3, 230_4), and a plurality of light absorbing portions (240_1, 240_2, 240_3, 240_4).

[0052] In an embodiment of the present disclosure, the support chuck (210) can support a substrate (SUB) that is a target of a semiconductor process performed by the substrate processing device (200). The support chuck (210) can be positioned apart from a plurality of lasers (230_1, 230_2, 230_3, 230_4) by a support member (220), and one side of the support member (220) can be accommodated or inserted in a groove or recess formed in the center of the support member (210). The substrate (SUB) can be placed on a first surface of the support member (210), and when a substrate (SUB) supplied from the outside is placed on the first surface of the support member (210), the substrate processing device (200) can perform a heating process procedure for the substrate (SUB). In some embodiments, the support (220) can perform an up-and-down movement under the control of the electronic device (120, see FIG. 1), and the position of the support chuck (210) can change according to the up-and-down movement of the support (200).

[0053] Referring to FIG. 2, the support chuck (210) may include a heating coil (211) that operates in a first heating mode for increasing the temperature to a reference temperature and maintaining the reference temperature. In an embodiment, the reference temperature may mean a temperature higher than room temperature but lower than a target temperature at which a process for the substrate (SUB) is performed. The heating coil (211) may be heated based on power supplied to the substrate processing device (200), and the thermal energy generated by the heating of the heating coil (211) may be transferred to the first surface of the support chuck (210), and the thermal energy transferred to the first surface of the support chuck (210) may be transferred to the substrate (SUB) on the support chuck (210). For the transfer of the thermal energy generated by the heating coil (211), the support chuck (210) may include a metallic material. The shape of the heating coil (211) included in the support (210) will be described in detail in FIG. 3a, which will be described later.

[0054] Meanwhile, in the embodiment, a plurality of light absorbing portions (240_1, 240_2, 240_3, 240_4) may be arranged on a second surface of the support member (210) that is parallel to the first surface of the support member (210) on which the substrate (SUB) is arranged. Alternatively, a plurality of light absorbing portions (240_1, 240_2, 240_3, 240_4) may be accommodated or inserted into each of a plurality of grooves or a plurality of recesses formed in the support member (210). In this case, one side of each of the plurality of light absorbing portions (240_1, 240_2, 240_3, 240_4) may be arranged to form a substantially flat surface with one side of the support member (210), and the flat surface formed by one side of the support member (210) and one side of each of the plurality of light absorbing portions (240_1, 240_2, 240_3, 240_4) may be referred to as a second side of the support member (210), and the second side of the support member (210) may be parallel to the first side on which the substrate (SUB) is arranged. The arrangement form of the plurality of light absorbing portions (240_1, 240_2, 240_3, 240_4) according to the embodiment of the present disclosure will be described in detail in FIG. 3b to be described later.

[0055] In an embodiment, each of the plurality of light absorbing portions (240_1, 240_2, 240_3, 240_4) can absorb laser light energy irradiated from at least one of the plurality of lasers (230_1, 230_2, 230_3, 230_4), and the substrate processing device (200) can operate in a second heating mode for increasing to a target temperature and maintaining the target temperature based on the light energy absorbed from the plurality of light absorbing portions (240_1, 240_2, 240_3, 240_4). In an embodiment, the target temperature may mean a temperature required to perform a semiconductor manufacturing process for the substrate (SUB). In an embodiment, light energy absorbed from a plurality of light absorbing portions (240_1, 240_2, 240_3, 240_4) can be transferred from a second surface of the support chuck (210) on which the plurality of light absorbing portions (240_1, 240_2, 240_3, 240_4) are arranged to a first surface of the support chuck (210) that supports the substrate (SUB), and the substrate (SUB) on the support chuck (210) can be heated based on the light energy transferred to the first surface.

[0056] In an embodiment, the heating coil (211) and at least some of the plurality of lasers (230_1, 230_2, 230_3, 230_4) may operate under the control of the electronic device (120). Specifically, when the substrate processing device (200) operates in the first heating mode, the electronic device (120) may control the substrate processing device (200) to supply power to the heating coil (211), and the heating coil (211) may generate heat based on the supplied power. Meanwhile, when the substrate processing device (200) operates in the second heating mode, the electronic device (120) can control the substrate processing device (200) so that at least some of the plurality of lasers (230_1, 230_2, 230_3, 230_4) irradiate laser light to at least some of the plurality of light absorbing portions (240_1, 240_2, 240_3, 240_4).

[0057] Meanwhile, although not shown, in some embodiments of the present disclosure, a plurality of lasers (230_1, 230_2, 230_3, 230_4) may be arranged on a plate arranged parallel to the support chuck (210), or may be accommodated or inserted into each of a plurality of grooves or a plurality of recesses formed in the plate. The light irradiating portions of each of the plurality of lasers (230_1, 230_2, 230_3, 230_4) may be arranged to form a plane with one side of the plate, and the plane formed by the light irradiating portions and one side of the plate may be parallel to a second side of the support chuck (210) on which the plurality of light absorbing portions (240_1, 240_2, 240_3, 240_4) are arranged.

[0058] Meanwhile, although only the first to fourth lasers (230_1, 230_2, 230_3, 230_4) are illustrated in the cross-sectional view of the substrate processing device (200) illustrated in FIG. 2, this merely illustrates a cross-section of the substrate processing device (200) according to an embodiment of the present disclosure, and does not limit the configuration of the substrate processing device (200) according to the embodiment of the present disclosure. According to the embodiment of the present disclosure, the number of lasers included in the substrate processing device (200) may be determined according to the characteristics of the semiconductor manufacturing process performed in the substrate processing device (200) and the specifications of the lasers. In addition, although only the first to fourth light absorbing portions (240_1, 240_2, 240_3, 240_4) are illustrated in the cross-sectional view of the substrate processing device (200) illustrated in FIG. 2, this merely illustrates a cross-section of the substrate processing device (200) according to an embodiment of the present disclosure, and does not limit the configuration of the substrate processing device (200) according to the embodiment of the present disclosure. According to the embodiment of the present disclosure, the number of light absorbing portions included in the substrate processing device (200) may be determined according to the characteristics of the semiconductor manufacturing process performed in the substrate processing device (200), the specifications of the laser, and the number of lasers. In this regard, this will be described in detail with reference to FIG. 3b to be described later.

[0059] FIG. 3a and FIG. 3b are drawings for explaining the structure of a support (310) according to an embodiment of the present disclosure.

[0060] More specifically, FIG. 3A illustrates a plan view of a support (310). Referring to FIG. 3A, the support (310) according to an embodiment of the present disclosure may include a support (320) and a heating coil (311). The support (310) illustrated in FIG. 3A may correspond to the support (210, see FIG. 2) illustrated in FIG. 2 described above, the support (320) illustrated in FIG. 3A may correspond to at least a portion of the support (220, see FIG. 2) illustrated in FIG. 2 described above, and the heating coil (311) illustrated in FIG. 3A may correspond to the heating coil (211, see FIG. 2) illustrated in FIG. 2 described above.

[0061] In an embodiment, when the substrate processing device (110) operates in the first heating mode for increasing the temperature to a reference temperature and maintaining the reference temperature, power may be supplied to the heating coil (311) under the control of the electronic device (120, see FIG. 1). The heating coil (311) may generate heat using the supplied power. The thermal energy generated in the heating coil (311) may be provided to the substrate (SUB, see FIG. 2) placed on the support member (310) through the support member (310). In FIG. 3A, the heating coil (311) is illustrated as having a symmetrical structure centered on the support member (320), but this merely illustrates the shape of the heating coil (311) according to one embodiment of the present disclosure and does not limit the shape of the heating coil (311) according to the embodiment of the present disclosure. According to an embodiment of the present disclosure, the heating coil (311) may be formed in any shape that can uniformly transfer thermal energy to the support member (310). In addition, in FIG. 3A, the heating coil (311) is illustrated as being formed as a single loop, but this merely illustrates the shape of the heating coil (311) according to an embodiment of the present disclosure, and does not limit the number of heating coils (311) according to the embodiment of the present disclosure. According to an embodiment of the present disclosure, a heating coil (311) including a plurality of loops may be included in the support member (310). In an embodiment, the heating coil (311) may include at least one of a metal material and a ceramic material.

[0062] Meanwhile, FIG. 3b illustrates one side of the support member (310). Referring to FIG. 3b, a support member (320) may penetrate one side of the support member (310) according to an embodiment of the present disclosure, and a plurality of light absorbing portions (340_1, 340_2, …, 340_18) may be arranged. The support (310) illustrated in FIG. 3b may correspond to the support (210) illustrated in FIG. 2 described above, the support (320) illustrated in FIG. 3b may correspond to at least a part of the support (220) illustrated in FIG. 2 described above, and at least a part of the plurality of light absorbing parts (340_1, 340_2, ..., 340_18) illustrated in FIG. 3b may correspond to the plurality of light absorbing parts (240_1, 240_2, 240_3, 240_4, see FIG. 2) illustrated in FIG. 2 described above.

[0063] In an embodiment, each of the plurality of light absorbing portions (340_1, 340_2, …, 340_18) may include a light absorbing material that absorbs laser light irradiated from a laser. In FIG. 3b, each of the plurality of light absorbing portions (340_1, 340_2, …, 340_18) is illustrated as being formed in a circular shape, but this merely illustrates a shape according to an embodiment of the present disclosure, and does not limit the shape of each of the plurality of light absorbing portions (340_1, 340_2, …, 340_18) formed according to an embodiment of the present disclosure. According to an embodiment of the present disclosure, each of the plurality of light absorbing portions (340_1, 340_2, …, 340_18) may be formed in any shape for absorbing laser light. In addition, in FIG. 3b, a plurality of light absorbing parts (340_1, 340_2, …, 340_18) are illustrated as being radially arranged around the support (320), but this merely illustrates an arrangement form according to an embodiment of the present disclosure, and does not limit the arrangement form of the plurality of light absorbing parts (340_1, 340_2, …, 340_18) according to the embodiment of the present disclosure. According to an embodiment of the present disclosure, the plurality of light absorbing parts (340_1, 340_2, …, 340_18) may be arranged in any form for absorbing laser light, and in order to increase laser light absorption efficiency, the area of ​​the plurality of light absorbing parts (340_1, 340_2, …, 340_18) may occupy 50% or more of the area of ​​the support (310).

[0064] FIG. 4 is a flowchart for explaining an operation method of a substrate processing device (110, see FIG. 1) according to one embodiment of the present disclosure.

[0065] In the flowchart illustrated in FIG. 4, steps S401 to S403 may be operations included in a first heating mode of the substrate processing device (110), and steps S404 to S406 may be operations included in a second heating mode of the substrate processing device (110). The first heating mode may refer to an operation mode for raising the temperature of the support chuck (210, see FIG. 2) to a reference temperature and maintaining the reference temperature, and the second heating mode may refer to an operation mode for raising the temperature of the support chuck (210) to a target temperature and maintaining the target temperature. In an embodiment, the reference temperature may be set to be higher than room temperature and lower than the target temperature, and in some embodiments, the reference temperature may refer to a preheating temperature required for the support chuck (210) when performing a process on a substrate (SUB, see FIG. 2). In an embodiment, the reference temperature may be set based on specification information of components constituting the substrate processing device (110). Meanwhile, the target temperature refers to the temperature required to perform a process on the substrate (SUB), and can be set differently depending on the type of process to be performed through the substrate processing device (110).

[0066] In step S401, the substrate processing device (110) according to an embodiment of the present disclosure can supply power to the heating coil (211, see FIG. 2) included in the support chuck (210) under the control of the electronic device (120, see FIG. 1). The amount of power supplied to the heating coil (211) in step S401 may be preset or determined based on semiconductor process recipe information stored in the electronic device (120). For example, the amount of power provided to the heating coil (211) may be determined based on at least a portion of the thermal conductivity information of the support chuck (210) and the heat generation capacity information of the heating coil (211) included in the semiconductor process recipe information, and may be determined by considering the temperature increase efficiency of the support chuck (210) relative to the amount of power supplied. The heating coil (211) may generate heat based on the supplied power, and the heat energy generated by the heat generation of the heating coil (211) may be conducted to the support chuck (210).

[0067] In step S402, the substrate processing device (110) according to the embodiment of the present disclosure can check whether the temperature (T) of the support chuck (210) is less than the reference temperature (T0). If it is confirmed that the temperature (T) of the support chuck (210) is less than the reference temperature (T0), the procedure can return to step S401. On the other hand, if it is confirmed that the temperature (T) of the support chuck (210) has reached the reference temperature (T0), the procedure can proceed to step S403.

[0068] In step S403, the substrate processing device (110) according to the embodiment of the present disclosure can maintain the temperature (T) of the support chuck (210) at the reference temperature (T0). Specifically, the substrate processing device (110) can supply power to the heating coil (211) to maintain the reference temperature (T0) of the support chuck (210) under the control of the electronic device (120), and the amount of power supplied to the heating coil (211) to maintain the reference temperature (T0) of the support chuck (210) can be less than or equal to the amount of power supplied to the heating coil (211) in step S401. While the support chuck (210) maintains the reference temperature (T0), a substrate (SUB) can be placed on one surface of the support chuck (210). Thermal energy of the support chuck (210) can be transferred to the substrate (SUB). In an embodiment, the substrate processing device (110) can maintain the reference temperature (T0) of the support (210) for a predetermined period of time that is preset or determined based on semiconductor process recipe information.

[0069] In step S404, the substrate processing device (110) according to the embodiment of the present disclosure may switch to a second heating mode and turn on each of the plurality of lasers (230_1, 230_2, 230_3, 230_4, see FIG. 2). Laser light emitted from each of the plurality of lasers (230_1, 230_2, 230_3, 230_4) may be absorbed by the plurality of light absorbing portions (240_1, 240_2, 240_3, 240_4). The light energy absorbed by the plurality of light absorbing portions (240_1, 240_2, 240_3, 240_4) is conducted to the support member (210), and the heat energy conducted to the support member (210) can be transferred to the substrate (SUB) on the support member (210).

[0070] In step S404, the output amount and output direction of each of the plurality of lasers (230_1, 230_2, 230_3, 230_4) may be determined based on at least a portion of the output wavelength range information of each of the plurality of lasers (230_1, 230_2, 230_3, 230_4) and the light absorption rate information of each of the plurality of light absorbing parts (240_1, 240_2, 240_3, 240_4) included in the semiconductor process recipe information. For convenience of explanation, in step S404, the output amount of each of the plurality of lasers (230_1, 230_2, 230_3, 230_4) will be referred to as the first output. In an embodiment, power supply to the heating coil (211) may be maintained even while the substrate processing device (110) operates in the second heating mode.

[0071] In step S405, the substrate processing device (110) according to the embodiment of the present disclosure can check whether the temperature (T) of the support chuck (210) is less than the target temperature (T1). If it is confirmed that the temperature (T) of the support chuck (210) is less than the target temperature (T1), the procedure can return to step S404. On the other hand, if it is confirmed that the temperature (T) of the support chuck (210) has reached the target temperature (T1), the procedure can proceed to step S406.

[0072] In step S406, the substrate processing device (110) according to the embodiment of the present disclosure can maintain the temperature (T) of the support member (210) at the target temperature (T1). Specifically, the substrate processing device (110) can maintain power supply to the heating coil (211) and laser light irradiation by a plurality of lasers (230_1, 230_2, 230_3, 230_4) to maintain the target temperature (T1) of the support member (210) under the control of the electronic device (120). However, in the above-described step S404, in order to achieve a rapid temperature increase of the support chuck (210), each of the plurality of lasers (230_1, 230_2, 230_3, 230_4) irradiates laser light corresponding to the first output, but in order to maintain the temperature (T) of the support chuck (210) at the target temperature (T1), each of the plurality of lasers (230_1, 230_2, 230_3, 230_4) may irradiate laser light corresponding to the second output that is lower than the first output. In an embodiment, the substrate processing device (110) may maintain the target temperature (T1) of the support chuck (210) for a predetermined time that is preset or determined based on semiconductor process recipe information.

[0073] At step S407, the substrate processing device (110) according to the embodiment of the present disclosure can confirm that the process for the substrate (SUB) is completed and turn off the plurality of lasers (230_1, 230_2, 230_3, 230_4). The substrate (SUB) whose process is confirmed to be completed can be transferred to a chamber for performing the next process. As the plurality of lasers (230_1, 230_2, 230_3, 230_4) are turned off, the temperature (T) of the support (210) corresponding to the target temperature (T1) can be lowered. Meanwhile, as the plurality of lasers (230_1, 230_2, 230_3, 230_4) are turned off, the operation mode of the substrate processing device (110) may be switched from the second heating mode to the first heating mode, and as the substrate processing device (110) operates in the first heating mode, power supply to the heating coil (211) may be maintained. In some embodiments, the amount of power supplied to the heating coil (211) in step S407 may be the same as the amount of power supplied to the heating coil (211) in step S403.

[0074] In step S408, the electronic device (120) according to the embodiment of the present disclosure can check whether the operation of the substrate processing device (110) has ended. If it is determined that the substrate (SUB) to be processed by the substrate processing device (110) remains, the electronic device (120) can check not to end the operation of the substrate processing device (110), and in this case, the procedure can return to step S403. By returning to step S403, the temperature of the support (210) can be maintained at the reference temperature (T0), which is a preheating temperature required before performing a process on the substrate (SUB), thereby facilitating fast and efficient processing of the substrate (SUB) additionally supplied to the substrate processing device (110). Meanwhile, if it is determined that there is no substrate (SUB) remaining to be processed by the substrate processing device (110), the electronic device (120) can be determined to terminate the operation of the substrate processing device (110), and in this case, the procedure can proceed to step S409.

[0075] At step S409, the substrate processing device (110) according to the embodiment of the present disclosure may stop supplying power to the heating coil (211). As the power supply to the heating coil (211) is stopped, the temperature (T) of the support member (210) may drop below the reference temperature (T0).

[0076] FIG. 5a is a drawing for explaining the operating principle of a substrate processing device (500a) operating in a first heating mode according to one embodiment of the present disclosure.

[0077] The substrate processing device (500a) illustrated in FIG. 5a may correspond to the substrate processing device (110, see FIG. 1) of FIG. 1 described above. In an embodiment, the first heating mode may mean an operation mode for increasing the temperature to a reference temperature and maintaining the reference temperature. The reference temperature is any temperature that is higher than room temperature and lower than a target temperature for performing a process on the substrate (SUB), and may be a temperature preset in the substrate processing system (10, see FIG. 1) or a temperature derived based on semiconductor process recipe information stored in the memory of the electronic device (120, see FIG. 1). In some embodiments, the reference temperature may mean a preheating temperature that the support member (510) must maintain in order to perform a process on the substrate (SUB).

[0078] In an embodiment, when the substrate processing device (500a) operates in the first heating mode, power may be supplied to the heating coil (511) included in the support chuck (510) under the control of the electronic device (120). The amount of power supplied to the heating coil (511) may be determined based on semiconductor process recipe information stored in the electronic device (120). For example, the power provided to the heating coil (511) may be determined based on at least a portion of the thermal conductivity information of the support chuck (510) and the heat generation capacity information of the heating coil (511) included in the semiconductor process recipe information. The heating coil (511) may generate heat based on the supplied power, and the heat energy generated by the heating coil (511) may be conducted to the support chuck (510). Power may be supplied to the heating coil (511) under the control of the electronic device (120) so that the temperature of the support chuck (510) reaches a reference temperature.

[0079] In an embodiment, when the temperature of the support chuck (510) reaches a reference temperature, power may be supplied to the heating coil (511) under the control of the electronic device (120) so that the temperature of the support chuck (510) is maintained at the reference temperature. In some embodiments, while the temperature of the support chuck (510) is maintained at the reference temperature, the substrate (SUB) may be placed on the support chuck (510), and thermal energy for the support chuck (510) may be conducted to the substrate (SUB), and the temperature of the substrate (SUB) may also rise. In an embodiment, the substrate (SUB) may be provided from a chamber for performing a process preceding a process performed in the substrate processing apparatus (500a), and the substrate processing apparatus (500a) may align the substrate (SUB) provided on the support chuck (510) in an arrangement that is easy to perform the process performed within the substrate processing apparatus (500a). In an embodiment, the substrate processing device (500a) may operate in a second heating mode after maintaining a reference temperature for a predetermined period of time that is preset or determined based on semiconductor process recipe information, and specific operations related to the second heating mode operation will be described later with reference to FIG. 5b.

[0080] FIG. 5b is a drawing for explaining the operating principle of a substrate processing device (500b) operating in a second heating mode according to one embodiment of the present disclosure.

[0081] The substrate processing device (500b) illustrated in FIG. 5b may correspond to the substrate processing device (110, see FIG. 1) of FIG. 1 described above. In an embodiment, the second heating mode may mean an operation mode for increasing the temperature to a target temperature and maintaining a reference temperature, and the target temperature is a temperature for performing a process on a substrate (SUB, see FIG. 2), and may be a temperature preset in the substrate processing system (10, see FIG. 1) or a temperature derived based on semiconductor process recipe information stored in the memory of an electronic device (120, see FIG. 1).

[0082] In an embodiment, when the substrate processing device (500b) operates in the second heating mode, each of the plurality of lasers (530_1, 530_2, 530_3, 530_4) may be turned on under the control of the electronic device (120). Each of the plurality of lasers (530_1, 530_2, 530_3, 530_4) may irradiate laser light to the plurality of light absorbing portions (540_1, 540_2, 540_3, 540_4) corresponding to at least one of an output wavelength and an output angle determined based on semiconductor process recipe information stored in the electronic device (120). For example, the output wavelength and output angle of each of the plurality of lasers (530_1, 530_2, 530_3, 530_4) may be determined based on at least a portion of the output wavelength range information of the laser and the light absorption rate information of the light absorbing portion included in the semiconductor process recipe information. The laser light irradiated from each of the plurality of lasers (530_1, 530_2, 530_3, 530_4) may be absorbed by the plurality of light absorbing portions (540_1, 540_2, 540_3, 540_4), and the light energy absorbed by the plurality of light absorbing portions (540_1, 540_2, 540_3, 540_4) may be conducted to the support chuck (510), and the energy conducted to the support chuck (510) may be conducted to the substrate (SUB) on the support chuck (510).

[0083] In FIG. 5b, the laser light irradiated from the first laser (530_1) is absorbed by the first light absorbing portion (540_1), the laser light irradiated from the second laser (530_2) is absorbed by the second light absorbing portion (540_2), the laser light irradiated from the third laser (530_3) is absorbed by the third light absorbing portion (540_3), and the laser light irradiated from the fourth laser (530_4) is absorbed by the fourth light absorbing portion (540_4). However, this is merely an example according to the present disclosure, and does not limit the operation of the substrate processing device (500b) according to the present disclosure. In some embodiments, the laser light emitted from the first laser (530_1) may be absorbed by the first light absorbing portion (540_1) and the second light absorbing portion (540_2), and the laser light emitted from the second laser (530_2) may also be absorbed by the first light absorbing portion (540_1) and the second light absorbing portion (540_2). That is, each of the plurality of lasers (530_1, 530_2, 530_3, 530_4) can irradiate laser light to at least one light absorbing portion corresponding to each of the plurality of lasers (530_1, 530_2, 530_3, 530_4), and the at least one light absorbing portion corresponding to each of the plurality of lasers (530_1, 530_2, 530_3, 530_4) can be preset or determined based on semiconductor process recipe information stored in the electronic device (120).

[0084] In an embodiment, laser light may be irradiated from a plurality of lasers (530_1, 530_2, 530_3, 530_4) to a plurality of light absorbing portions (540_1, 540_2, 540_3, 540_4) so ​​that the temperature of the support chuck (510) reaches a target temperature under the control of the electronic device (120). In addition, when the temperature of the support chuck (510) reaches the target temperature, laser light may be irradiated so that the temperature of the support chuck (510) maintains the target temperature under the control of the electronic device (120). In an embodiment, the substrate processing device (500b) may maintain the target temperature for a predetermined time that is preset or determined based on semiconductor process recipe information. Meanwhile, even when the substrate processing device (500b) operates in the second heating mode, power supply to the heating coil (511) can be maintained, and in this case, the support member (510) can reach the target temperature and maintain the target temperature by utilizing both the heat energy generated by the heating coil (511) and the light energy absorbed from the plurality of light absorbing parts (540_1, 540_2, 540_3, 540_4).

[0085] FIG. 6 is a drawing showing a temperature change according to a heating process operation of a substrate processing device (110, see FIG. 1) according to one embodiment of the present disclosure.

[0086] More specifically, FIG. 6 illustrates the temperature change pattern of the support chuck (210) during the process in which the substrate processing device (110) is turned on, operates in the first heating mode, switches to the second heating mode when the temperature of the support chuck (210, see FIG. 2) reaches the reference temperature (T0), switches back to the first heating mode when the temperature of the support chuck (210) reaches the target temperature (T1), and ends the process for the substrate (SUB, see FIG. 2) by turning the device (110) off.

[0087] When the operation by the substrate processing device (110) starts, the substrate processing device (110) operates in the first heating mode, and power can be supplied to the heating coil (211, see FIG. 2) so that the temperature of the support chuck (210) reaches the reference temperature (T0). The heating coil (211) can generate heat based on the supplied power, and the temperature of the support chuck (210) can reach the reference temperature (T0) based on the thermal energy by the heating coil (211), as shown in the period 0 to t1 of FIG. 6. In addition, the temperature of the support chuck (210) can be maintained at the reference temperature (T0) based on the thermal energy by the heating coil (211), as shown in the period t1 to t2 of FIG. 6, and within the period t1 to t2, the substrate (SUB) can be placed on the support chuck (210).

[0088] When the temperature of the support chuck (210) reaches the reference temperature (T0) and the substrate (SUB) is placed on the support chuck (210), the thermal energy of the support chuck (210) can be transferred to the substrate (SUB), and the temperature of the substrate (SUB) can reach the reference temperature (T0) based on the thermal balance principle. When the temperature of the substrate (SUB) reaches the reference temperature (TO), the substrate processing device (110) can operate in the second heating mode to turn on a plurality of lasers (230_1, 230_2, 230_3, 230_4, see FIG. 2) so that the temperature of the support chuck (210) reaches the target temperature (T1). Laser light irradiated from a plurality of lasers (230_1, 230_2, 230_3, 230_4) can be absorbed through a plurality of light absorbing parts (240_1, 240_2, 240_3, 240_4, see FIG. 2) arranged on one surface of the support member (210), and the temperature of the support member (210) can reach the target temperature (T1) based on the light energy absorbed through the plurality of light absorbing parts (240_1, 240_2, 240_3, 240_4) as in the t2 to t3 section of FIG. 6. In addition, as shown in the t3 to t4 section of FIG. 6, the temperature of the support (210) can be maintained at the target temperature (T1) for performing a process on the substrate (SUB) based on the light energy absorbed from the plurality of light absorbing portions (240_1, 240_2, 240_3, 240_4).

[0089] Alternatively, in some embodiments, the substrate processing device (110) may operate in the second heating mode even before the temperature of the substrate (SUB) reaches the reference temperature (TO), in which case the substrate processing device (110) may turn on the plurality of lasers (230_1, 230_2, 230_3, 230_4) so ​​that the temperature of the support member (210) reaches the target temperature (T1). Laser light irradiated from a plurality of lasers (230_1, 230_2, 230_3, 230_4) can be absorbed through a plurality of light absorbing parts (240_1, 240_2, 240_3, 240_4, see FIG. 2) arranged on one surface of the support member (210), and the temperature of the support member (210) can reach the target temperature (T1) based on the light energy absorbed through the plurality of light absorbing parts (240_1, 240_2, 240_3, 240_4) as in the t2 to t3 section of FIG. 6. When the temperature of the support member (210) reaches the target temperature (T1), the temperature of the support member (210) can be maintained at the target temperature (T1) for performing a process on the substrate (SUB) based on the light energy absorbed from the plurality of light absorbing parts (240_1, 240_2, 240_3, 240_4) as shown in the t3 to t4 section of FIG. 6.

[0090] When the process for the substrate (SUB) is completed, the substrate processing device (210) can turn off the plurality of lasers (230_1, 230_2, 230_3, 230_4) and perform a mode change to the first heating mode, as shown in the section t4 to t5 of FIG. 6. As the plurality of lasers (230_1, 230_2, 230_3, 230_4) are turned off, the temperature of the support beam (210) can decrease and reach the reference temperature (TO).

[0091] Meanwhile, the substrate processing device (210) operating in the first heating mode, as shown in the t5 to t6 section of FIG. 6, can maintain the temperature of the support chuck (210) at the reference temperature (T0) based on the thermal energy generated by the heating coil (211). The support chuck (210) maintaining the reference temperature (T0) can facilitate more quickly performing a process for a subsequently provided substrate (SUB). Meanwhile, when the operation of the substrate processing device (210) is stopped, the power supply to the heating coil (211) may be cut off, and thus, the temperature of the support chuck (210) may decrease, as shown in the section after t6 of FIG. 6.

[0092] FIG. 7 is a flowchart for explaining an operation method of a substrate processing device (110, see FIG. 1) according to another embodiment of the present disclosure.

[0093] In the flowchart illustrated in FIG. 7, steps S701 to S703 may be operations included in a first heating mode of the substrate processing device (110), steps S704 to S706 may be operations included in a second heating mode of the substrate processing device (110), and steps S707 to S709 may be operations included in a third heating mode of the substrate processing device (110). The first heating mode may mean an operation mode for increasing the temperature of the support chuck (210, see FIG. 2) to a reference temperature and maintaining the reference temperature, the second heating mode may mean an operation mode for increasing the temperature of the support chuck (210) to a first target temperature and maintaining the target temperature, and the third heating mode may mean an operation mode for increasing the temperature of the support chuck (210) to a second target temperature and maintaining the target temperature.

[0094] In an embodiment, the reference temperature may be set to be higher than room temperature and lower than the first target temperature, and in some embodiments, the reference temperature may mean a preheating temperature required for the support (210) when performing a process on the substrate (SUB, see FIG. 2). In an embodiment, the reference temperature may be set based on specification information of components constituting the substrate processing device (110). Meanwhile, the first target temperature means a temperature required to perform a first process on the substrate (SUB), and the second target temperature means a temperature required to perform a second process on the substrate (SUB), and may be set differently depending on the type of process to be performed through the substrate processing device (110). As a specific example, the first process may be a soaking process and the second process may be a wetting process, but the types of the first process and the second process according to the embodiments of the present disclosure are not limited, and the second process may be any process procedure in which the process is performed at a higher temperature than the first process.

[0095] In step S701, the substrate processing device (110) according to an embodiment of the present disclosure can supply power to the heating coil (211, see FIG. 2) included in the support chuck (210) under the control of the electronic device (120, see FIG. 1). The amount of power supplied to the heating coil (211) in step S701 may be preset or determined based on semiconductor process recipe information stored in the electronic device (120). For example, the amount of power provided to the heating coil (211) may be determined based on at least a portion of the thermal conductivity information of the support chuck (210) and the heat generation capacity information of the heating coil (211) included in the semiconductor process recipe information, and may be determined by considering the temperature increase efficiency of the support chuck (210) relative to the amount of power supplied. The heating coil (211) may generate heat based on the supplied power, and the heat energy generated by the heat generation of the heating coil (211) may be conducted to the support chuck (210).

[0096] In step S702, the substrate processing device (110) according to the embodiment of the present disclosure can check whether the temperature (T) of the support chuck (210) is less than the reference temperature (T0). If it is confirmed that the temperature (T) of the support chuck (210) is less than the reference temperature (T0), the procedure can return to step S701. On the other hand, if it is confirmed that the temperature (T) of the support chuck (210) has reached the reference temperature (T0), the procedure can proceed to step S703.

[0097] In step S703, the substrate processing device (110) according to the embodiment of the present disclosure can maintain the temperature (T) of the support chuck (210) at the reference temperature (T0). Specifically, the substrate processing device (110) can supply power to the heating coil (211) to maintain the reference temperature (T0) of the support chuck (210) under the control of the electronic device (120), and the amount of power supplied to the heating coil (211) to maintain the reference temperature (T0) of the support chuck (210) can be less than or equal to the amount of power supplied to the heating coil (211) in step S401. While the support chuck (210) maintains the reference temperature (T0), a substrate (SUB) can be placed on one surface of the support chuck (210). Thermal energy of the support chuck (210) can be transferred to the substrate (SUB). In an embodiment, the substrate processing device (110) can maintain the reference temperature (T0) of the support (210) for a predetermined period of time that is preset or determined based on semiconductor process recipe information.

[0098] In step S704, the substrate processing device (110) according to the embodiment of the present disclosure may switch to the second heating mode and turn on a first laser set composed of some of a plurality of lasers (230_1, 230_2, 230_3, 230_4, see FIG. 2). For convenience of explanation, it is assumed that the first laser set includes a first laser (230_1) and a fourth laser (230_4). Laser light irradiated from the first laser set may be absorbed by at least some of a plurality of light absorbing portions (240_1, 240_2, 240_3, 240_4, see FIG. 2). The first light energy absorbed by at least some of the plurality of light absorbing portions (240_1, 240_2, 240_3, 240_4) is conducted to the support member (210), and the thermal energy conducted to the support member (210) can be transferred to the substrate (SUB) on the support member (210).

[0099] In step S704, the output amount and output direction of each of the first laser (230_1) and the fourth laser (230_4) may be determined based on at least a portion of the output wavelength range information of each of the first laser (230_1) and the fourth laser (230_4) and the light absorption rate information of each of the plurality of light absorbing portions (240_1, 240_2, 240_3, 240_4) included in the semiconductor process recipe information. For convenience of explanation, in step S704, the output amount of each of the first laser (230_1) and the fourth laser (230_4) will be referred to as the first output. In an embodiment, power supply to the heating coil (211) may be maintained even while the substrate processing device (110) operates in the second heating mode.

[0100] In step S705, the substrate processing device (110) according to the embodiment of the present disclosure can check whether the temperature (T) of the support chuck (210) is less than the first target temperature (T1). If it is confirmed that the temperature (T) of the support chuck (210) is less than the first target temperature (T1), the procedure can return to step S704. On the other hand, if it is confirmed that the temperature (T) of the support chuck (210) has reached the first target temperature (T1), the procedure can proceed to step S706.

[0101] In step S706, the substrate processing device (110) according to the embodiment of the present disclosure can maintain the temperature (T) of the support chuck (210) at the first target temperature (T1). Specifically, the substrate processing device (110) can maintain the power supply to the heating coil (211) and the laser light irradiation by the first laser set to maintain the first target temperature (T1) of the support chuck (210) under the control of the electronic device (120). However, in step S704 described above, in order to promote a rapid temperature increase of the support chuck (210), each of the first laser (230_1) and the fourth laser (230_4) irradiates laser light corresponding to the first output, but in maintaining the temperature (T) of the support chuck (210) at the first target temperature (T1), each of the first laser (230_1) and the fourth laser (230_4) can irradiate laser light corresponding to the second output that is lower than the first output. In an embodiment, the substrate processing device (110) can maintain the first target temperature (T1) of the support (210) for a predetermined period of time that is preset or determined based on semiconductor process recipe information.

[0102] At step S707, the substrate processing device (110) according to the embodiment of the present disclosure may switch to a third heating mode and additionally turn on a second laser set including at least some of the remaining lasers excluding the first laser set among the plurality of lasers (230_1, 230_2, 230_3, 230_4, see FIG. 2). For convenience of explanation, it is assumed that the second laser set includes the second laser (230_2) and the third laser (230_3). Laser light irradiated from the first laser set and the second laser set may be absorbed by at least some of the plurality of light absorbing portions (240_1, 240_2, 240_3, 240_4, see FIG. 2). The second light energy absorbed by at least some of the plurality of light absorbing portions (240_1, 240_2, 240_3, 240_4) is conducted to the support member (210), and the thermal energy conducted to the support member (210) can be transferred to the substrate (SUB) on the support member (210).

[0103] In step S707, the output amount and output direction of each of the plurality of lasers (730_1, 730_2, 730_3, 730_4) may be determined based on at least a portion of the output wavelength range information of each of the plurality of lasers (730_1, 730_2, 730_3, 730_4) and the light absorption rate information of each of the plurality of light absorbing parts (240_1, 240_2, 240_3, 240_4) included in the semiconductor process recipe information. For convenience of explanation, in step S707, the output amount of each of the plurality of lasers (730_1, 730_2, 730_3, 730_4) will be referred to as the third output. In an embodiment, power supply to the heating coil (211) may be maintained even while the substrate processing device (110) operates in the third heating mode.

[0104] At step S708, the substrate processing device (110) according to the embodiment of the present disclosure can check whether the temperature (T) of the support chuck (210) is less than the second target temperature (T2). If it is confirmed that the temperature (T) of the support chuck (210) is less than the second target temperature (T2), the procedure can return to step S707. On the other hand, if it is confirmed that the temperature (T) of the support chuck (210) has reached the second target temperature (T2), the procedure can proceed to step S709.

[0105] At step S709, the substrate processing device (110) according to the embodiment of the present disclosure can maintain the temperature (T) of the support member (210) at the second target temperature (T2). Specifically, the substrate processing device (110) can maintain power supply to the heating coil (211) and laser light irradiation by the first laser set and the second laser set to maintain the second target temperature (T2) of the support member (210) under the control of the electronic device (120). However, in the above-described step S707, in order to achieve a rapid temperature increase of the support chuck (210), each of the plurality of lasers (230_1, 230_2, 230_3, 230_4) irradiates laser light corresponding to the third output, but in order to maintain the temperature (T) of the support chuck (210) at the second target temperature (T2), each of the plurality of lasers (230_1, 230_2, 230_3, 230_4) may irradiate laser light corresponding to the fourth output that is lower than the third output. In an embodiment, the substrate processing device (110) may maintain the second target temperature (T2) of the support chuck (210) for a predetermined time that is preset or determined based on semiconductor process recipe information.

[0106] At step S710, the substrate processing device (110) according to the embodiment of the present disclosure can confirm that the first process and the second process for the substrate (SUB) are completed, and can turn off the plurality of lasers (230_1, 230_2, 230_3, 230_4). The substrate (SUB), for which the process is confirmed to be completed, can be transferred to a chamber for performing the next process. As the plurality of lasers (230_1, 230_2, 230_3, 230_4) are turned off, the temperature (T) of the support (210) corresponding to the second target temperature (T2) can be lowered. Meanwhile, as the plurality of lasers (230_1, 230_2, 230_3, 230_4) are turned off, the operation mode of the substrate processing device (110) may be switched from the third heating mode to the first heating mode, and as the substrate processing device (110) operates in the first heating mode, power supply to the heating coil (211) may be maintained. In some embodiments, the amount of power supplied to the heating coil (211) in step S710 may be the same as the amount of power supplied to the heating coil (211) in step S703.

[0107] In step S711, the electronic device (120) according to the embodiment of the present disclosure can check whether the operation of the substrate processing device (110) has ended. If it is determined that the substrate (SUB) to be processed by the substrate processing device (110) remains, the electronic device (120) can check not to end the operation of the substrate processing device (110), and in this case, the procedure can return to step S703. By returning to step S703, the temperature of the support (210) can be maintained at the reference temperature (T0), which is a preheating temperature required before performing a process on the substrate (SUB), thereby facilitating fast and efficient processing of the substrate (SUB) additionally supplied to the substrate processing device (110). Meanwhile, if it is determined that there is no substrate (SUB) remaining to be processed by the substrate processing device (110), the electronic device (120) can be determined to terminate the operation of the substrate processing device (110), and in this case, the procedure can proceed to step S712.

[0108] At step S712, the substrate processing device (110) according to the embodiment of the present disclosure may stop supplying power to the heating coil (211). As the power supply to the heating coil (211) is stopped, the temperature (T) of the support member (210) may drop below the reference temperature (T0).

[0109] FIG. 8a is a drawing for explaining the operating principle of a substrate processing device (800a) operating in a first heating mode according to another embodiment of the present disclosure.

[0110] The substrate processing device (800a) illustrated in FIG. 8A may correspond to the substrate processing device (110, see FIG. 1) of FIG. 1 described above. The substrate processing device (800a) operating in the first heating mode illustrated in FIG. 8A can generate heat based on the power supplied to the heating coil (811), similar to the substrate processing device (500a) operating in the first heating mode illustrated in FIG. 5A described above, and the heat energy generated by the heating coil (811) can be conducted to the support member (810). The support member (810) can reach a reference temperature based on the heat energy generated by the heating coil (811) and maintain the reference temperature. Hereinafter, any overlapping content with the first heating mode operation described with reference to FIG. 5A will be omitted.

[0111] FIG. 8b is a drawing for explaining the operating principle of a substrate processing device operating in a second heating mode according to another embodiment of the present disclosure.

[0112] The substrate processing device (800b) illustrated in FIG. 8b may correspond to the substrate processing device (110, see FIG. 1) of FIG. 1 described above. In the embodiment illustrated in FIG. 8b, the second heating mode may mean an operation mode for increasing the temperature to a first target temperature and maintaining the reference temperature, and the first target temperature is a temperature for performing a first process on a substrate (SUB, see FIG. 2), and may be a temperature preset in the substrate processing system (10, see FIG. 1) or a temperature derived based on semiconductor process recipe information stored in the memory of an electronic device (120, see FIG. 1).

[0113] In an embodiment, when the substrate processing device (800b) operates in the second heating mode, a first laser set including some of the plurality of lasers (830_1, 830_2, 830_3, 830_4) may be turned on under the control of the electronic device (120). In the embodiment illustrated in FIG. 8b, the first laser set may be composed of a first laser (830_1) and a fourth laser (830_4). Each of the first laser (830_1) and the fourth laser (830_4) may irradiate laser light to the light absorbing portion corresponding to each of the first laser (830_1) and the fourth laser (830_4) in response to at least one of an output wavelength and an output angle determined based on semiconductor process recipe information stored in the electronic device (120). The output wavelength and output angle of each of the first laser (830_1) and the fourth laser (830_4) may be determined based on at least a portion of the output wavelength range information of the laser and the light absorption rate information of the light absorption portion included in the semiconductor process recipe information.

[0114] In the embodiment illustrated in FIG. 8B, the first laser (830_1) can irradiate laser light to the first light absorbing portion (840_1), and the fourth laser (830_4) can irradiate laser light to the fourth light absorbing portion (840_4). The light energy absorbed from the first light absorbing portion (840_1) and the fourth light absorbing portion (840_4) can be conducted to the support portion (810), and the energy conducted to the support portion (810) can be conducted to the substrate (SUB) on the support portion (810).

[0115] In FIG. 8b, the laser light irradiated from the first laser (830_1) is illustrated as being absorbed by the first light absorbing portion (840_1), and the laser light irradiated from the fourth laser (830_4) is illustrated as being absorbed by the fourth light absorbing portion (840_4). However, this is only one embodiment according to the present disclosure, and does not limit the operation of the substrate processing device (800b) according to the present disclosure. In some embodiments, the laser light irradiated from the first laser (830_1) may be absorbed by the first light absorbing portion (840_1) and the second light absorbing portion (840_2), and the laser light irradiated from the fourth laser (830_4) may be absorbed by the third light absorbing portion (840_3) and the fourth light absorbing portion (840_4). That is, each laser included in the first laser set can irradiate laser light to at least one light absorbing portion corresponding to each laser, and the at least one light absorbing portion corresponding to each laser can be preset or determined based on semiconductor process recipe information stored in the electronic device (120).

[0116] In the embodiment illustrated in FIG. 8b, laser light may be irradiated from the first laser (830_1) and the fourth laser (830_4) to the first light absorbing portion (840_1) and the fourth light absorbing portion (840_4) so ​​that the temperature of the support chuck (810) reaches the first target temperature under the control of the electronic device (120). In addition, when the temperature of the support chuck (810) reaches the first target temperature, laser light may be irradiated so that the temperature of the support chuck (810) maintains the target temperature under the control of the electronic device (120). In the embodiment, the substrate processing device (800b) may maintain the target temperature for a predetermined time that is preset or determined based on semiconductor process recipe information. Meanwhile, even when the substrate processing device (800b) operates in the second heating mode, power supply to the heating coil (811) can be maintained, and in this case, the support member (810) can reach the first target temperature and maintain the first target temperature by using both the heat energy generated by the heating coil (811) and the light energy absorbed from the first light absorbing portion (840_1) and the fourth light absorbing portion (840_4).

[0117] FIG. 8c is a drawing for explaining the operating principle of a substrate processing device (800c) operating in a third heating mode according to another embodiment of the present disclosure.

[0118] The substrate processing device (800c) illustrated in FIG. 8c may correspond to the substrate processing device (110, see FIG. 1) of FIG. 1 described above. In the embodiment illustrated in FIG. 8c, the third heating mode may refer to an operation mode for increasing the temperature to a second target temperature and maintaining the reference temperature, and the second target temperature is a temperature for performing a second process on a substrate (SUB, see FIG. 2), which may be a temperature preset in the substrate processing system (10, see FIG. 1) or a temperature derived based on semiconductor process recipe information stored in the memory of an electronic device (120, see FIG. 1). In the embodiment, the first target temperature corresponding to the first heating mode of the substrate processing device (110) may be lower than the second target temperature corresponding to the third heating mode.

[0119] In an embodiment, when the substrate processing device (800c) operates in the third heating mode, a second laser set may be additionally turned on in addition to the first laser set in FIG. 8b described above by the control of the electronic device (120). The second laser set may include at least some of the remaining lasers (830_1, 830_2, 830_3, 830_4) excluding the first laser set. In the embodiment illustrated in FIG. 8c, it is assumed that the first laser set is composed of the first laser (830_1) and the fourth laser (830_4), and the second laser set is composed of the second laser (830_2) and the third laser (830_3). In the embodiment illustrated in FIG. 8c, when the substrate processing device (800c) operates in the third heating mode, all of the plurality of lasers (830_1, 830_2, 830_3, 830_4) may be turned on, and each of the plurality of lasers (830_1, 830_2, 830_3, 830_4) may irradiate laser light to the light absorbing portion corresponding to each of the plurality of lasers (830_1, 830_2, 830_3, 830_4) in response to at least one of the output wavelength and the output angle determined based on the semiconductor process recipe information stored in the electronic device (120). The output wavelength and the output angle of each of the plurality of lasers (830_1, 830_2, 830_3, 830_4) may be determined based on at least a part of the output wavelength range information of the laser and the light absorption rate information of the light absorbing portion included in the semiconductor process recipe information.

[0120] In the embodiment illustrated in FIG. 8C, the first laser (830_1) can irradiate laser light to the first light absorbing portion (840_1), the second laser (830_2) can irradiate laser light to the second light absorbing portion (840_2), the third laser (830_3) can irradiate laser light to the third light absorbing portion (840_3), and the fourth laser (840_4) can irradiate laser light to the fourth light absorbing portion (840_4). The light energy absorbed from the plurality of light absorbing portions (840_1, 840_2, 840_3, 840_4) can be conducted to the support portion (810), and the energy conducted to the support portion (810) can be conducted to the substrate (SUB) on the support portion (810).

[0121] In FIG. 8c, the laser light irradiated from the first laser (830_1) is absorbed by the first light absorbing portion (840_1), the laser light irradiated from the second laser (830_2) is absorbed by the second light absorbing portion (840_2), the laser light irradiated from the third laser (830_3) is absorbed by the third light absorbing portion (840_3), and the laser light irradiated from the fourth laser (830_4) is absorbed by the fourth light absorbing portion (840_4). However, this is only one embodiment according to the present disclosure, and does not limit the operation of the substrate processing device (800c) according to the present disclosure. In an embodiment, each of the plurality of lasers (830_1, 830_2, 830_3, 830_4) can irradiate laser light to at least one light absorbing portion corresponding to each of the plurality of lasers (830_1, 830_2, 830_3, 830_4), and the at least one light absorbing portion corresponding to each of the plurality of lasers (830_1, 830_2, 830_3, 830_4) can be preset or determined based on semiconductor process recipe information stored in the electronic device (120).

[0122] In the embodiment illustrated in FIG. 8c, laser light may be irradiated from a plurality of lasers (830_1, 830_2, 830_3, 830_4) to a plurality of light absorbing portions (840_1, 840_2, 840_3, 840_4) so ​​that the temperature of the support chuck (810) reaches a second target temperature under the control of the electronic device (120). In addition, when the temperature of the support chuck (810) reaches the second target temperature, laser light may be irradiated so that the temperature of the support chuck (810) maintains the second target temperature under the control of the electronic device (120). In the embodiment, the substrate processing device (800c) may maintain the second target temperature for a predetermined time that is preset or determined based on semiconductor process recipe information. Meanwhile, even when the substrate processing device (800c) operates in the third heating mode, power supply to the heating coil (811) can be maintained, and in this case, the support member (810) can reach the second target temperature and maintain the second target temperature by using both the heat energy generated by the heating coil (811) and the light energy absorbed from the plurality of light absorbing parts (840_1, 840_2, 840_3, 840_4).

[0123] FIG. 9 is a drawing showing a temperature change according to a heating process operation of a substrate processing device (110, see FIG. 1) according to another embodiment of the present disclosure.

[0124] More specifically, FIG. 9 illustrates the temperature change pattern of the support chuck (210) during the process in which the substrate processing device (110) is turned on, operates in the first heating mode, switches to the second heating mode when the temperature of the support chuck (210, see FIG. 2) reaches the reference temperature (T0), switches to the third heating mode when the temperature of the support chuck (210) reaches the first target temperature (T1), switches to the first heating mode again when the temperature of the support chuck (210) reaches the second target temperature (T2) to complete the target process, and ends the process for the substrate (SUB, see FIG. 2) thereby turning off the substrate processing device (110).

[0125] When the operation by the substrate processing device (110) starts, the substrate processing device (110) operates in the first heating mode, and power can be supplied to the heating coil (211, see FIG. 2) so that the temperature of the support chuck (210) reaches the reference temperature (T0). The heating coil (211) can generate heat based on the supplied power, and the temperature of the support chuck (210) can reach the reference temperature (T0) based on the thermal energy by the heating coil (211), as shown in the period 0 to t1 of FIG. 6. In addition, the temperature of the support chuck (210) can be maintained at the reference temperature (T0) based on the thermal energy by the heating coil (211), as shown in the period t1 to t2 of FIG. 6, and within the period t1 to t2, the substrate (SUB) can be placed on the support chuck (210).

[0126] When the temperature of the support chuck (210) reaches the reference temperature (T0) and the substrate (SUB) is placed on the support chuck (210), the thermal energy of the support chuck (210) can be transferred to the substrate (SUB), and the temperature of the substrate (SUB) can reach the reference temperature (T0) based on the thermal balance principle. When the temperature of the substrate (SUB) reaches the reference temperature (TO), the substrate processing device (110) can operate in a second heating mode to turn on a first laser set composed of at least some of the plurality of lasers (230_1, 230_2, 230_3, 230_4, see FIG. 2) so that the temperature of the support chuck (210) reaches the first target temperature (T1). In explaining FIG. 9, it is assumed that the first laser set is composed of the first laser (230_1) and the fourth laser (230_4), and the first target temperature (T1) can correspond to the temperature for performing the first process on the support (210).

[0127] The laser light irradiated from the first laser (230_1) and the fourth laser (230_4) can be absorbed through the light absorbing portions corresponding to the first laser (230_1) and the fourth laser (230_4) among the plurality of light absorbing portions (240_1, 240_2, 240_3, 240_4, see FIG. 2) arranged on one surface of the support (210), and in describing FIG. 9, it is assumed that the laser light irradiated from the first laser (230_1) is absorbed through the first light absorbing portion (230_1), and the laser light irradiated from the fourth laser (240_4) is absorbed through the fourth light absorbing portion (240_4). As shown in the t2 to t3 sections of FIG. 9, the temperature of the support member (210) can reach the first target temperature (T1) based on the light energy absorbed through the first light absorbing member (240_1) and the fourth light absorbing member (240_4). In addition, as shown in the t3 to t4 sections of FIG. 9, the temperature of the support member (210) can maintain the first target temperature (T1) for performing a process on the substrate (SUB) based on the light energy absorbed from the first light absorbing member (240_1) and the fourth light absorbing member (240_4).

[0128] Alternatively, in some embodiments, the substrate processing device (110) may operate in the second heating mode even before the temperature of the substrate (SUB) reaches the reference temperature (TO), in which case the substrate processing device (110) may turn on the first laser set including the first laser (230_1) and the fourth laser (230_4) so ​​that the temperature of the support (210) reaches the first target temperature (T1). The laser light irradiated from the first laser (230_1) and the fourth laser (230_4) can be absorbed through the first light absorbing portion (240_1) and the fourth light absorbing portion (240_4) arranged on one surface of the support chuck (210), and the temperature of the support chuck (210) can reach the first target temperature (T1) based on the light energy absorbed through the first light absorbing portion (240_1) and the fourth light absorbing portion (240_4), as shown in the t2 to t3 sections of FIG. 9. When the temperature of the support chuck (210) reaches the first target temperature (T1), the temperature of the support chuck (210) can be maintained at the first target temperature (T1) for performing a process on the substrate (SUB) based on the light energy absorbed from the first light absorbing portion (240_1) and the fourth light absorbing portion (240_4), as shown in the t3 to t4 sections of FIG. 9.

[0129] When the first process for the substrate (SUB) is completed, the substrate processing device (210) may operate in a third heating mode, as shown in the period t4 to t5 of FIG. 9, to turn on the second laser set composed of the second laser (230_2) and the third laser (230_3) so that the temperature of the support chuck (210) reaches the second target temperature (T2). The second target temperature (T2) may correspond to the temperature for performing the second process for the support chuck (210). In describing FIG. 9, it is assumed that the laser light irradiated from the second laser (230_2) is absorbed through the second light absorbing portion (230_2), and the laser light irradiated from the third laser (230_2) is absorbed through the third light absorbing portion (230_3).

[0130] The laser light irradiated from the first laser set and the second laser set can be absorbed through a plurality of light absorbing parts (240_1, 240_2, 240_3, 240_4) arranged on one surface of the support chuck (210). As shown in the t4 to t5 sections of FIG. 9, the temperature of the support chuck (210) can reach the second target temperature (T2) based on the light energy absorbed through the plurality of light absorbing parts (240_1, 240_2, 240_3, 240_4). In addition, as shown in the t5 to t6 sections of FIG. 9, the temperature of the support chuck (210) can be maintained at the second target temperature (T2) for performing a process on the substrate (SUB) based on the light energy absorbed from the plurality of light absorbing parts (240_1, 240_2, 240_3, 240_4).

[0131] When the second process for the substrate (SUB) is completed, the substrate processing device (210) can perform a mode switch to the first heating mode, as shown in the section t6 to t7 of FIG. 9. As the operation mode of the substrate processing device (210) switches to the first heating mode, the first laser set, which is composed of the first laser (230_1) and the fourth laser (230_4), and the second laser set, which is composed of the second laser (230_2) and the third laser (230_3), can be turned off. As the first laser set and the second laser set are turned off, the temperature of the support member (210) can decrease and reach the reference temperature (T0).

[0132] Meanwhile, the substrate processing device (210) operating in the first heating mode, as shown in the t7 to t8 section of FIG. 9, can maintain the temperature of the support chuck (210) at the reference temperature (T0) based on the thermal energy generated by the heating coil (211). The support chuck (210) maintaining the reference temperature (T0) can facilitate more quickly performing a process for a subsequently provided substrate (SUB). Meanwhile, when the operation of the substrate processing device (210) is stopped, the power supply to the heating coil (211) may be cut off, and thus, the temperature of the support chuck (210) may decrease, as shown in the section after t8 of FIG. 9.

[0133] FIG. 10 is a block diagram illustrating the configuration of an electronic device (1000) according to an embodiment of the present disclosure.

[0134] The electronic device (1000) illustrated in FIG. 10 may correspond to the electronic device (120, see FIG. 1) of FIG. 1 described above. Referring to FIG. 10, the electronic device (1000) may include a control unit (1010), a temperature measurement unit (1020), a power control unit (1030), a laser control unit (1040), and a distance adjustment unit (1050). In FIG. 10, the control unit (1010), the temperature measurement unit (1020), the power control unit (1030), the laser control unit (1040), and the distance adjustment unit (1050) are illustrated as physically separate configurations, but this is only for convenience of explanation and does not limit the configuration of the electronic device (1010) according to the embodiment of the present disclosure. The control unit (1010), temperature measurement unit (1020), power control unit (1030), laser control unit (1040), and distance control unit (1050) included in the electronic device (1000) according to the embodiment of the present disclosure may mean logically separated configurations.

[0135] In an embodiment, the control unit (1010) may perform a process for temperature control of the substrate processing device (110, see FIG. 1) based on a program (or algorithm) stored in the memory of the electronic device (1000). Specifically, the control unit (1010) may check whether the substrate processing device (110) is operating, check whether a substrate (SUB, see FIG. 2) is placed on a support (210, see FIG. 2) of the substrate processing device (110), and perform a process for temperature control of the substrate processing device (110) based on semiconductor process recipe information stored in the memory of the electronic device (1000). In performing the process for temperature control, the control unit (1010) may control at least one of a temperature measurement unit (1020), a power control unit (1030), a laser control unit (1040), and a distance control unit (1050).

[0136] In an embodiment, the temperature measuring unit (1020) may obtain temperature information for at least one of the support chuck (210) and the substrate (SUB) placed on the support chuck (210), and provide the obtained temperature information to the control unit (1010). In some embodiments, the substrate processing device (110) may include at least one temperature sensor for measuring the temperature of at least one of the support chuck (210) and the substrate (SUB), and temperature information measured by the at least one temperature sensor may be provided to the temperature measuring unit (1020).

[0137] In an embodiment, the power control unit (1030) can control whether to supply power and the amount of power supplied to at least one of the heating coil (211, see FIG. 2) and the plurality of lasers (230_1, 230_2, 230_3, 230_4, see FIG. 2). The power control unit (1030) can control the component to which power is supplied and the amount of power supplied to the component based on semiconductor process recipe information stored in the memory of the electronic device (1000).

[0138] In an embodiment, the laser control unit (1040) can control the output of at least one of the plurality of lasers (230_1, 230_2, 230_3, 230_4). Specifically, when the substrate processing device (110) operates in the second heating mode (or operates in the third heating mode) corresponding to the target temperature, the laser control unit (1040) can control at least some of the output, output wavelength, and output angle of each of the plurality of lasers (230_1, 230_2, 230_3, 230_4) based on the semiconductor process recipe information.

[0139] In some embodiments, the distance control unit (1050) can control the distance between the plurality of lasers (230_1, 230_2, 230_3, 230_4) and the support chuck (210). The distance between the plurality of lasers (230_1, 230_2, 230_3, 230_4) and the support chuck (210) can be determined based on semiconductor process recipe information.

[0140] FIG. 11 is a block diagram illustrating an electronic device (1100) according to an embodiment of the present disclosure.

[0141] The electronic device (1100) illustrated in FIG. 11 may correspond to the electronic device (120, see FIG. 1) of FIG. 1 described above, and referring to FIG. 11, the electronic device (1100) according to an embodiment of the present disclosure may include a transceiver (1110), a processor (1120), and a memory (1130).

[0142] The electronic device (1100) is connected to an external device through a transceiver (1110) and can exchange data (or signals).

[0143] The processor (1120) can perform an operation performed by at least one of the devices described through FIGS. 1 to 10 described above, or perform at least one method described through FIGS. 1 to 10 described above. In addition, the processor (1120) can execute a program for performing an operation performed by at least one of the devices described through FIGS. 1 to 10 described above, or at least one method described through FIGS. 1 to 10 described above, and can process information to perform an operation performed by at least one of the devices described through FIGS. 1 to 10 described above, or at least one method described through FIGS. 1 to 10 described above, and control a substrate processing device (110, see FIG. 1) based on the processed information.

[0144] The memory (1130) may include at least one of volatile memory and non-volatile memory, and may store code of a program executed by the processor (1120).

[0145] Meanwhile, the embodiments disclosed in this specification may be implemented in the form of a recording medium that stores computer-executable instructions. The instructions may be stored in the form of program code, and when executed by a processor, may generate program modules to perform the operations of the disclosed embodiments. The recording medium may be implemented as a computer-readable recording medium. The computer-readable recording medium may include any type of recording medium that stores instructions that can be deciphered by a computer. Examples thereof include ROM, RAM, magnetic tape, magnetic disk, flash memory, and optical data storage devices.

[0146] The above-described embodiments are specific examples for implementing the present disclosure. The present disclosure will encompass not only the above-described embodiments, but also embodiments that can be simply designed or easily modified. Furthermore, the present disclosure will encompass techniques that can be easily modified and implemented using the above-described embodiments. Therefore, the scope of the present disclosure should not be limited to the above-described embodiments, but should be defined not only by the claims set forth below, but also by equivalents of the claims of the present disclosure.

Claims

1. In a substrate processing device that performs temperature control on a semiconductor substrate, A support including a heating coil; A support member, one side of which is accommodated in a groove formed in the central portion of the support member; A plurality of light absorbing parts arranged on one side of the support; and Including a plurality of lasers that irradiate laser light to the plurality of light absorbing portions, The above substrate processing device: When operating in the first heating mode corresponding to the reference temperature, the temperature of the support is controlled based on the heat energy generated by the heating coil, When the temperature of the support is confirmed to correspond to the reference temperature, the operation mode is switched to a second heating mode corresponding to a first target temperature for performing a first process on the semiconductor substrate supported by the support, A substrate processing device that controls the temperature of the support beam based on the heat energy generated by the heating coil and the first light energy absorbed by the plurality of light absorbing portions when operating in the second heating mode.

2. In paragraph 1, A substrate processing device in which all of the plurality of lasers are turned on when the substrate processing device operates in the second heating mode.

3. In paragraph 2, A substrate processing device in which each of the plurality of lasers irradiates laser light to at least one light absorbing portion corresponding to each of the plurality of lasers among the plurality of light absorbing portions.

4. In paragraph 1, When the substrate processing device operates in the first heating mode, the substrate processing device: Supplying a first power to the heating coil so that the temperature of the support reaches the reference temperature, A substrate processing device that supplies a second power lower than the first power so that the temperature of the support chuck maintains the reference temperature when it is confirmed that the temperature of the support chuck has reached the reference temperature.

5. In paragraph 4, When the substrate processing device operates in the second heating mode, each of the plurality of lasers: Irradiate laser light corresponding to the first output so that the temperature of the above support reaches the first target temperature, A substrate processing device that irradiates laser light corresponding to a second output lower than the first output so that the temperature of the support chuck maintains the first target temperature when it is confirmed that the temperature of the support chuck has reached the first target temperature.

6. In paragraph 1, A substrate processing device that switches the operation mode from the second heating mode to the first heating mode when it is confirmed that the first process for the semiconductor substrate is completed.

7. In paragraph 1, The above substrate processing device: When the temperature of the support is confirmed to correspond to the first target temperature, the operation mode is switched to a third heating mode corresponding to the second target temperature for performing a second process on the semiconductor substrate, When operating in the third heating mode, the temperature of the support is controlled based on the heat energy generated by the heating coil and the second light energy absorbed by the plurality of light absorbing parts. The first optical energy is formed by a first laser set comprising some of a plurality of lasers, A substrate processing device in which the second optical energy is formed by a first laser set and a second laser set composed of the remaining lasers excluding the first laser set among a plurality of lasers.

8. In paragraph 7, The above reference temperature is: Set above room temperature, is set lower than the first target temperature, A substrate processing device in which the first target temperature is set lower than the second target temperature.

9. In a method of operating a substrate processing device that performs temperature control on a semiconductor substrate, A step of heating a support base based on thermal energy generated by a heating coil; A step of placing the semiconductor substrate on the support chuck when the temperature of the support chuck reaches a reference temperature; A step of irradiating laser light using a plurality of lasers to a plurality of light absorbing parts arranged on one surface of the support; and An operating method comprising a step of heating the support so that the temperature of the support reaches a target temperature based on the light energy absorbed by the plurality of light absorbing portions.

10. A substrate processing device that performs temperature control on a semiconductor substrate; and Including an electronic device for controlling the above substrate processing device, The above substrate processing device: A support including a heating coil; A support member, one side of which is accommodated in a groove formed in the central portion of the support member; A plurality of light absorbing parts arranged on one side of the support; and Including a plurality of lasers that irradiate laser light to the plurality of light absorbing portions, The electronic device includes a transceiver, a memory for storing instructions, and a processor, The processor connected to the transceiver and the memory: When the substrate processing device operates in a first heating mode corresponding to a reference temperature, the substrate processing device is controlled so that the temperature of the support reaches the reference temperature based on the heat energy generated by the heating coil, When the temperature of the support chuck is confirmed to correspond to the reference temperature, the substrate processing device is controlled so that the operation mode is switched to a second heating mode corresponding to a target temperature for performing a process on the semiconductor substrate supported by the support chuck. A substrate processing system that controls the substrate processing device so that the temperature of the support shaft reaches a target temperature based on the heat energy generated by the heating coil and the first light energy absorbed by the plurality of light absorbing parts when the substrate processing device operates in the second heating mode.

Images