Method for edge passivation and repair of crystalline silicon-based cell segment, and passivation apparatus

Abstract

Provided are a method for edge passivation and repair of a crystalline silicon-based cell segment, and a passivation apparatus. The method for edge passivation and repair of a crystalline silicon-based cell segment comprises: stacking a plurality of crystalline silicon-based cell segments (121), and making cut edges of the plurality of crystalline silicon-based cell segments (121) coplanar to form a surface to be passivated, thereby forming a crystalline silicon-based cell segment group (120); placing the crystalline silicon-based cell segment group (120) into a fixing tool (110) to form a passivation unit (100); providing a conveying mechanism (200) and conveying the passivation unit (100) into an evaporation and annealing mechanism (300) provided with a first source material, heating the first source material under a vacuum condition and a temperature environment of 20°C to 300°C to evaporate the first source material and form a gaseous first source material, and depositing the gaseous first source material onto a surface to be passivated to form a first passivation layer; and in a temperature environment of 100°C to 350°C, the evaporation and annealing mechanism (300) performing annealing treatment on the crystalline silicon-based cell segment group (120) in the passivation unit (100) after completion of the deposition of the first passivation layer. The above technical solution addresses the issues of cumbersome, time-consuming, and labor-intensive edge passivation processes for cell segments, and addresses the difficulty of achieving large-scale production of edge passivation.

Description

Passivation repair method and passivation device for wafering section of crystalline silicon-based cell wafer

[0001] Cross-reference to Related Applications

[0002] The present application claims priority to the Chinese patent application No. 202411024631.7 filed on July 29, 2024 in the China Patent Office and entitled "Passivation repair method and passivation device for wafering section of crystalline silicon-based cell wafer", the content of which is incorporated herein by reference in its entirety. TECHNICAL FIELD

[0003] The present application relates to the technical field of cell wafering passivation, and in particular to a passivation repair method and passivation device for wafering section of crystalline silicon-based cell wafer. BACKGROUND

[0004] The wafering methods of cell wafer generally include laser scribing plus mechanical splitting, laser thermal splitting non-damage splitting, etc. Since the section of the cell sub-wafer (half cell wafer or multi-wafer cell wafer) formed after segmentation has not been passivated, the edge recombination is increased, the conversion efficiency is reduced, and when the photovoltaic module produced therefrom works under a certain system voltage, the sodium ions existing in the photovoltaic module will gather at the section under the action of the electric field, forming a leakage channel, which reduces the positive and negative insulation resistance of the photovoltaic module, not only reduces the photoelectric conversion efficiency of the photovoltaic module, but also further reduces the reliability of the photovoltaic module.

[0005] In the related art, the section of the cell sub-wafer is passivated by chemical deposition, i.e. PECVD method and ALD method. Specifically, a first layer (silicon oxide and / or aluminum oxide layer) is first deposited, then a second layer (silicon nitride layer) is deposited, and finally light injection hydrogen passivation is performed to repair the cutting damage and improve the conversion efficiency of the cell sub-wafer. However, when the above method is implemented, the stacked cell sub-wafer is placed in the ALD deposition device, preheated in a vacuum environment, and then the section of the cell sub-wafer is deposited with the first layer. Then the cell sub-wafer is taken out and placed in the PECVD reaction device, preheated in a vacuum environment, and then the appropriate process gas is introduced. Finally, the section of the cell sub-wafer is deposited with the second layer, and then the cell sub-wafer is placed in the light injection annealing furnace for hydrogen passivation. In the above passivation operation, the cell sub-wafer not only needs to be processed and treated in turn by multiple devices, but also has strict requirements for multiple process parameters such as temperature, vacuum pressure, gas flow, and deposition direction of the plasma of each device, thereby leading to a complicated, time-consuming and labor-intensive passivation process for the section of the cell sub-wafer, and it is difficult to form a large-scale production of the passivation of the section of the cell sub-wafer.

[0006] SUMMARY

[0007] The present application aims to provide a passivation repair method for a crystal silicon-based cell piece section and a passivation method to solve the problems in the background art.

[0008] To achieve the above object, the present application provides the following technical solution: a passivation repair method for a crystal silicon-based cell piece section, comprising:

[0009] S1, stack multiple crystal silicon-based cell pieces to form a crystal silicon-based cell piece group, and make the sections of the multiple crystal silicon-based cell pieces coplanar to form a to-be-passivated surface, and place the crystal silicon-based cell piece group in a fixing tool to form a passivation unit, wherein each to-be-passivated surface is exposed outside the fixing tool;

[0010] S2, provide a conveying mechanism to convey the passivation unit to an evaporation annealing mechanism, the evaporation annealing mechanism is provided with a first source material, under vacuum condition and temperature environment of 20-300 DEG C, the evaporation annealing mechanism heats and evaporates the first source material to form gaseous first source material, and the gaseous first source material is deposited on the to-be-passivated surface in the passivation unit to form a first passivation layer;

[0011] S3, the evaporation annealing mechanism performs annealing treatment on the crystal silicon-based cell piece group in the passivation unit with the first passivation layer deposited under temperature environment of 100-350 DEG C.

[0012] Preferably, in the S2 step, it comprises:

[0013] S21, the evaporation annealing mechanism comprises an evaporation cavity and an annealing cavity, the evaporation cavity is not communicated with the annealing cavity, and the conveying mechanism conveys the passivation unit to the evaporation cavity to deposit the first passivation layer;

[0014] S22, the conveying mechanism conveys the passivation unit with the first passivation layer deposited to the annealing cavity.

[0015] Preferably, the evaporation annealing mechanism is provided with a process cavity, and the passivation unit can sequentially complete the first passivation layer deposition and the annealing treatment in the process cavity.

[0016] Preferably, in the S2 step, it comprises:

[0017] The to-be-passivated surface in the passivation unit is conveyed to the evaporation annealing mechanism after cleaning and drying, or the conveying mechanism conveys the passivation unit to the evaporation annealing mechanism, and the evaporation annealing mechanism is preheated and vacuumized at the same time, and the preheating temperature is 50-150 DEG C.

[0018] Preferably, in the S2 step, the method of heating and evaporating the first source material to form the gaseous first source material comprises:

[0019] The evaporation annealing mechanism is provided with an electron beam gun, which sprays an electron beam to bombard the first source material to form the gaseous first source material.

[0020] Preferably, in the S2 step, the method of heating and evaporating the first source material to form the gaseous first source material comprises:

[0021] The evaporation annealing mechanism is provided with a resistance heating element, which heats the first source material to form the gaseous first source material.

[0022] Preferably, in the S2 step, the method of heating and evaporating the first source material to form the gaseous first source material comprises:

[0023] The evaporation annealing mechanism is provided with a laser emitting element, which emits laser to heat the first source material to form the gaseous first source material.

[0024] Preferably, in the S2 step, the method comprises:

[0025] The evaporation annealing mechanism is further provided with a second source material, after the first passivation layer is deposited on the surface to be passivated, the evaporation annealing mechanism heats and evaporates the second source material to form a gaseous second source material, which performs second passivation layer deposition on the first passivation layer on the surface to be passivated.

[0026] Preferably, the evaporation annealing mechanism is further provided with the second source material, after the first passivation layer is deposited on the surface to be passivated, the evaporation annealing mechanism heats and evaporates the second source material to form the gaseous second source material, which performs the second passivation layer deposition on the first passivation layer on the surface to be passivated, the method comprising:

[0027] The evaporation annealing mechanism comprises a first evaporation cavity, a second evaporation cavity and an annealing cavity, which are not connected to each other, the first evaporation cavity is provided with the first source material, the second evaporation cavity is provided with the second source material, the conveying mechanism conveys the passivation unit, on which the first passivation layer deposition is completed, to the second evaporation cavity, under vacuum condition and temperature environment of 20-300℃, the second source material is heated and evaporated to form the gaseous second source material, which performs the second passivation layer deposition on the first passivation layer on the surface to be passivated;

[0028] The conveying mechanism conveys the passivation unit, on which the second passivation layer deposition is completed, to the annealing cavity.

[0029] Preferably, in the S2 step, the following steps are included:

[0030] The evaporation annealing mechanism further comprises a second source material. The evaporation annealing mechanism heats and evaporates the second source material to form gaseous second source material under vacuum and at a temperature of 20-300°C. The gaseous second source material is used to deposit a second passivation layer on the surface to be passivated.

[0031] After the second passivation layer is deposited on the surface to be passivated, the evaporation annealing mechanism heats and evaporates the first source material to form gaseous first source material. The gaseous first source material is used to deposit the first passivation layer on the second passivation layer.

[0032] Preferably, in the S2 step, the following steps are included:

[0033] The passivation unit is located in the evaporation annealing mechanism. The surface to be passivated in the passivation unit is arranged at an angle of 0-90° with the direction of gravity. The passivation unit is located above the first source material. The evaporation annealing mechanism deposits the first passivation layer on the passivation unit while the passivation unit rotates horizontally.

[0034] Preferably, the conveying mechanism can convey multiple passivation units into the evaporation annealing mechanism to complete the deposition of the first passivation layer. The evaporation annealing mechanism can sequentially complete the deposition of the first passivation layer and annealing treatment for multiple passivation units.

[0035] Preferably, in the S2 step, the deposition rate of the gaseous first source material for depositing the first passivation layer on the surface to be passivated is 0.1-10 nm / s.

[0036] The application further discloses a passivation device for implementing the passivation repair method. The passivation device comprises a lamination mechanism, a lamination conveying mechanism, a fixing tool, a conveying mechanism, and an evaporation annealing mechanism. The lamination mechanism is used to stack multiple silicon-based cell sub-pieces to form a silicon-based cell sub-piece group. The lamination conveying mechanism is used to convey the silicon-based cell sub-piece group to the fixing tool to form the passivation unit. The conveying mechanism can carry and drive the passivation unit to move into the evaporation annealing mechanism.

[0037] Preferably, the fixing tool comprises a cavity with an opening and a fastener. The silicon-based cell sub-piece group can be placed in the cavity. The cross sections of multiple silicon-based cell sub-pieces in the silicon-based cell sub-piece group are coplanar and exposed to the opening or flush with the end surface of the opening. The fastener is arranged in the cavity. The fastener is used to fix the silicon-based cell sub-piece group in the cavity.

[0038] Preferably, the conveying mechanism comprises a conveying channel and a carrying hand, the conveying channel can carry and drive the passivation unit to move to the discharge end of the conveying channel, and the carrying hand carries the passivation unit at the discharge end to the evaporation annealing mechanism.

[0039] The technical scheme adopted by the present application can achieve the following beneficial effects:

[0040] In one aspect, the present application discloses a passivation repair method for a crystal silicon-based cell piece section, comprising:

[0041] S1, stack multiple crystal silicon-based cell piece sections to form a crystal silicon-based cell piece section group, and make the sections of the multiple crystal silicon-based cell piece sections coplanar to form a to-be-passivated surface, and place the crystal silicon-based cell piece section group in a fixing tool to form a passivation unit, wherein each to-be-passivated surface is exposed outside the fixing tool corresponding thereto.

[0042] S2, provide a conveying mechanism to convey the passivation unit to an evaporation annealing mechanism, the evaporation annealing mechanism is provided with a first source material, under a vacuum condition and a temperature environment of 20-300 DEG C, the evaporation annealing mechanism heats and evaporates the first source material to form a gaseous first source material, and the gaseous first source material deposits a first passivation layer on the to-be-passivated surface in the passivation unit.

[0043] In this step, by physical deposition (i.e. evaporation plating process), the gaseous first source material is formed by heating and evaporating the first source material, and the gaseous first source material deposits a first passivation layer on the to-be-passivated surface in the passivation unit. Compared with chemical deposition (including ALD method and PECVD method), the deposition direction of plasma, the flow of process gas and other process factors need to be controlled in the deposition process. The evaporation plating process only needs to control the vacuum pressure intensity and evaporation temperature in the provided vacuum space to deposit the first passivation layer. Therefore, the process control factors of the above method are less, the process method is simple, and time and labor are saved.

[0044] At the same time, chemical deposition has good wrap plating property, and can deposit thin film on different convex and concave surfaces, and is mainly applied to depositing passivation film on the surface of a silicon wafer after texturing, which is uneven. However, when it is applied to depositing a first passivation layer on the section of a crystal silicon-based cell piece, it is easy to cause the front and back surfaces of the crystal silicon-based cell piece to be reduced in illumination area due to the shielding of the first passivation layer. Physical deposition mainly deposits a first passivation layer in a manner similar to light incidence deposition of gaseous source material on the to-be-passivated surface, and the area of the crystal silicon-based cell piece section that is shielded will not be plated with the first passivation layer.

[0045] S3, the evaporation annealing mechanism anneals the crystal silicon-based cell piece group at a temperature of 100-350°C.

[0046] In this step, the interface structure between the first passivation layer and the surface to be passivated is changed by annealing treatment to destroy the Si dangling bond, reduce the probability of minority carriers (minority carriers) on the surface to be passivated, and reduce the surface recombination velocity. The free hydrogen atoms in the evaporation annealing mechanism can occupy the vacancies of the dangling bonds on the surface to be passivated, reduce the interface state density of the surface, and achieve the effect of reducing the surface recombination velocity, thereby realizing the passivation effect and improving the photoelectric conversion efficiency of the passivated crystal silicon-based cell piece group.

[0047] The above-mentioned passivation repair method uses physical deposition, i.e. evaporation coating and annealing treatment. Compared with the passivation repair process of the crystal silicon-based cell piece group by chemical deposition (including ALD and PECVD), the process steps and the corresponding equipment are simplified, and the control requirements of process factors are reduced, thereby achieving the purpose of improving the photoelectric conversion efficiency of the passivated crystal silicon-based cell piece group, avoiding complicated process, and facilitating the automatic and large-scale passivation production of the crystal silicon-based cell piece group.

[0048] In addition, since the ALD and PECVD equipment needs to introduce special process gas due to its own process, and the working environment of the cell string welding equipment needs to be isolated from the special process gas, the above-mentioned equipment cannot be in the same working environment, thereby making it difficult for the passivation device containing the ALD and PECVD equipment to directly interface with the cell string welding equipment. However, the physical deposition used in the present application does not require the use of special gas, so the related equipment in the above-mentioned method can also be directly interfaced with the cell string welding equipment, thereby facilitating the feeding efficiency of the cell string welding equipment.

[0049] On the other hand, the present application discloses a passivation device for realizing the above-mentioned passivation repair method. The disclosed passivation device comprises a laminating mechanism, a piece handling mechanism, a fixing tool, a conveying mechanism, and an evaporation annealing mechanism. The laminating mechanism is used to stack a plurality of crystal silicon-based cell piece groups to form a crystal silicon-based cell piece group. The piece handling mechanism is used to handle the crystal silicon-based cell piece group and place it in the fixing tool. The conveying mechanism can carry and drive the fixing tool to move into the evaporation annealing mechanism.

[0050] The cooperation between the laminating mechanism, the piece handling mechanism, the fixing tool, the conveying mechanism, and the evaporation annealing mechanism realizes the above-mentioned passivation repair method, and realizes the automatic and large-scale passivation production of the crystal silicon-based cell piece group. BRIEF DESCRIPTION OF DRAWINGS

[0051] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the accompanying drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced. Obviously, the accompanying drawings in the following description only aim to explain the embodiments of the present application, and for those skilled in the art, other drawings can also be obtained without creative labor on the basis of the provided drawings.

[0052] Fig. 1 is a schematic diagram of the structure of a passivation device according to an embodiment of the present application;

[0053] Fig. 2 is a schematic diagram of the structure of a passivation device according to another embodiment of the present application;

[0054] Fig. 3 is a schematic diagram of the structure of a battery piece slicing group according to an embodiment of the present application.

[0055] In the drawings: 100, passivation unit; 110, fixing tool; 120, slicing group; 121, crystalline silicon-based battery piece slicing; 200, conveying mechanism; 210, conveying channel; 220, carrying hand; 300, evaporation annealing mechanism; 310, evaporation cavity; 320, annealing cavity; 400, laminating mechanism; 500, piece carrying mechanism. DETAILED DESCRIPTION

[0056] In order to facilitate the understanding of the present application, the present application will be described more fully below with reference to the accompanying drawings. The preferred embodiments of the present application are shown in the drawings. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, these embodiments are provided to make the disclosure of the present application more thorough and comprehensive.

[0057] It should be noted that when an element is referred to as being "disposed on" another element, it can be directly on the other element or there can be an intervening element. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or there can be an intervening element.

[0058] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the present application belongs. The terminology used in the description of the present application herein only for the purpose of describing the specific embodiments and is not intended to limit the present application.

[0059] The present application discloses a passivation repair method for a crystalline silicon-based battery piece slicing section, and the disclosed passivation repair method comprises:

[0060] S1, stack multiple crystalline silicon-based cell piece segments 121 to form a crystalline silicon-based cell piece segment group 120, and make the cross sections of the multiple crystalline silicon-based cell piece segments 121 coplanar to form a to-be-passivated surface A, and place the crystalline silicon-based cell piece segment group 120 in a fixing tool 110 to form a passivation unit 100, wherein each to-be-passivated surface A is exposed outside the fixing tool 110 corresponding thereto.

[0061] In this step, the cross sections of the multiple crystalline silicon-based cell piece segments 121 are coplanar to form the to-be-passivated surface A, and the to-be-passivated surface A is exposed outside the fixing tool 110 corresponding thereto, thereby preventing the cross section end of any one of the multiple crystalline silicon-based cell piece segments 121 from having a problem of first passivation layer around plating when the crystalline silicon-based cell piece segment group 120 is subsequently deposited with a first passivation layer. The crystalline silicon-based cell piece segment 121 can be made of a crystalline silicon cell piece, a composite perovskite cell with crystalline silicon as a substrate, etc., and the present application does not make any limitation thereto.

[0062] S2, provide a conveying mechanism 200 to convey the passivation unit 100 to an evaporation annealing mechanism 300, the evaporation annealing mechanism 300 is provided with a first source material, and the evaporation annealing mechanism 300 is heated to evaporate the first source material to form a gaseous first source material under a vacuum condition and a temperature environment of 20-300°C, and the gaseous first source material is deposited on the to-be-passivated surface of the passivation unit 100 to form a first passivation layer.

[0063] In this step, the gaseous first source material is formed by heating and evaporating the first source material through physical deposition, i.e., an evaporation film plating process, and the gaseous first source material is deposited on the to-be-passivated surface of the passivation unit 100 to form a first passivation layer. Compared with chemical deposition including ALD and PECVD methods, which need to control multiple process factors such as the deposition direction of the plasma, the flow rate of the process gas, etc. during the deposition process, the evaporation film plating process only needs to form the gaseous first source material by heating and evaporating the first source material in the provided vacuum space to deposit the first passivation layer. Therefore, only the vacuum pressure intensity and the evaporation temperature need to be controlled, thereby making the process control factors of the above method less, the process method simple, and time and labor saved. The first source material can be aluminum oxide, titanium oxide, etc., and the present application does not make any limitation thereto.

[0064] Meanwhile, chemical deposition has good around plating property and can deposit a thin film on different convex and concave surfaces, and is mainly applied to deposit a passivation film on the surface of a silicon wafer after texturing. However, when applied to deposit a first passivation layer on the cross section of the crystalline silicon-based cell piece segment 121, it is easy to cause the front and back surfaces of the crystalline silicon-based cell piece segment 121 to have a reduced light exposure area due to the shielding of the first passivation layer. Physical deposition mainly deposits the first passivation layer in a manner similar to light incidence deposition by forming a gaseous source material on the to-be-passivated surface, and the area of the crystalline silicon-based cell piece segment 121 that is shielded will not be plated with the first passivation layer.

[0065] S3, the evaporation annealing mechanism 300 anneals the wafer group 120 of the crystalline silicon-based battery piece in the passivation unit 100 which has completed the deposition of the first passivation layer in a temperature environment of 100-350°C.

[0066] In this step, through annealing treatment, the interface structure of the first passivation layer and the surface A to be passivated is changed to destroy the Si dangling bond, reduce the probability of minority carriers of the surface A to be passivated meeting and recombining on the surface, thereby reducing the surface recombination velocity, and the free hydrogen atoms in the evaporation annealing mechanism 300 can occupy the vacancies of the dangling bonds of the surface A to be passivated, thereby reducing the interface state density of the surface to achieve the effect of reducing the surface recombination velocity, thereby realizing the passivation effect to improve the photoelectric conversion efficiency of the passivated crystalline silicon-based battery piece.

[0067] The passivation repair method described above adopts a physical deposition method, i.e., evaporation coating and annealing treatment. Compared with the passivation repair process method for the section of the crystalline silicon-based battery piece 121 by chemical deposition including ALD and PECVD, the process steps and the corresponding equipment mechanism are simplified, and the control requirements of process factors are reduced, thereby achieving the purpose of improving the photoelectric conversion efficiency of the passivated crystalline silicon-based battery piece 121, and avoiding complicated processes, thereby being conducive to the automation and large-scale passivation production of the crystalline silicon-based battery piece.

[0068] In addition, since the ALD and PECVD equipment needs to introduce special process gas due to its own process requirements, and the working environment of the battery string welding equipment needs to be isolated from the special process gas, the above-mentioned equipment cannot be in the same working environment, thereby leading to the difficulty of directly connecting the passivation device containing the ALD and PECVD equipment with the battery string welding equipment. However, the physical deposition used in the present application does not need to use special gas, so the related equipment in the above-mentioned method can be directly connected with the battery string welding equipment, thereby being conducive to improving the feeding efficiency of the battery string welding equipment.

[0069] In the first optional scheme, the step S2 can include:

[0070] S21, the evaporation annealing mechanism 300 includes an evaporation cavity 310 and an annealing cavity 320, the evaporation cavity 310 and the annealing cavity 320 are not communicated, and the conveying mechanism 200 conveys the passivation unit 100 into the evaporation cavity 310 for deposition of the first passivation layer;

[0071] In this step, by setting the evaporation cavity 310 and the annealing cavity 320 which are not communicated to form two continuous processing stations, the continuous operation of the deposition of the first passivation layer and the annealing treatment of the passivation unit 100 is realized, thereby further improving the passivation efficiency.

[0072] S22, the conveying mechanism 200 conveys the passivation unit 100 on which the first passivation layer is deposited to the annealing cavity 320.

[0073] In the second alternative, the evaporation annealing mechanism 300 can be provided with a process cavity, and the passivation unit 100 can sequentially complete the deposition of the first passivation layer and the annealing process in the process cavity, that is, the deposition process of the first passivation layer and the annealing process are both completed in the process cavity. By sequentially completing the deposition of the first passivation layer and the annealing process of the passivation unit 100 in the process cavity, not only does the passivation unit 100 need to be transferred multiple times, but also it is conducive to the integrated design of the evaporation annealing mechanism 300.

[0074] In the third alternative, the step S2 can include:

[0075] The surface A to be passivated in the passivation unit 100 is conveyed to the evaporation annealing mechanism 300 after cleaning and drying, or the conveying mechanism 200 conveys the passivation unit 100 to the evaporation annealing mechanism 300, and the evaporation annealing mechanism 300 is preheated and vacuumized at the same time, and the preheating temperature is 50-100℃.

[0076] Because the water stains are left on the section of the crystalline silicon-based cell piece segment 121 when the crystalline silicon-based cell piece is cut to form the crystalline silicon-based cell piece segment 121, in this step, the cleanliness of the surface A to be passivated in the passivation unit 100 is improved by cleaning and drying the surface A to be passivated. Of course, when preheating directly in the evaporation annealing mechanism 300, the preheating temperature is 50-150℃, and the water stains on the surface A to be passivated will also evaporate under the heat, thereby ensuring the deposition effect of the first passivation layer. Of course, the higher the preheating temperature, the faster the water stain cleaning efficiency.

[0077] In further technical solutions, in the first alternative, in the step S2, the method of heating and evaporating the first source material to form gaseous first source material can include:

[0078] The evaporation annealing mechanism 300 is provided with an electron beam gun, and the electron beam gun sprays an electron beam to bombard the first source material to form gaseous first source material.

[0079] In this step, the electron beam gun has the characteristics of being able to obtain extremely high energy density, with a maximum of 109w / cm2, and the heating temperature can reach 3000-6000℃. The electron beam gun can precisely bombard the first source material by utilizing the electromagnetic field, not only making it melt and evaporate rapidly and then deposit on the section of the crystalline silicon-based cell piece segment 121, but also improving the purity of the gaseous first source material. This is conducive to the rapid deposition and high purity of the first passivation layer, thereby ensuring the passivation effect.

[0080] In the second alternative, in the S2 step, the method of heating and evaporating the first source material to form the gaseous first source material can include:

[0081] The evaporation annealing mechanism 300 is provided with a resistance heating element, the resistance heating element carries the first source material, and the resistance heating element heats the first source material to form the gaseous first source material.

[0082] In the third alternative, in the S2 step, the method of heating and evaporating the first source material to form the gaseous first source material can include:

[0083] The evaporation annealing mechanism 300 is provided with a laser emitting element, the laser emitting element emits laser to heat the first source material to form the gaseous first source material.

[0084] In the fourth alternative, in the S2 step, it can include:

[0085] The evaporation annealing mechanism 300 is further provided with a second source material, after the first passivation layer is deposited on the surface to be passivated, the evaporation annealing mechanism 300 heats and evaporates the second source material to form a gaseous second source material, and the gaseous second source material is deposited on the first passivation layer on the surface to be passivated to form a second passivation layer.

[0086] In this step, the second passivation layer is deposited on the first passivation layer to protect the first passivation layer, thereby prolonging the service life of the first passivation layer and improving the storage time of the crystalline silicon-based cell piece 121. The second source material can be aluminum nitride, silicon oxide, etc., which is not limited by the present application.

[0087] In a further technical solution, the evaporation annealing mechanism 300 is further provided with a second source material, after the first passivation layer is deposited on the surface to be passivated, the evaporation annealing mechanism 300 heats and evaporates the second source material to form a gaseous second source material, and the gaseous second source material is deposited on the first passivation layer on the surface to be passivated to form a second passivation layer.

[0088] The evaporation annealing mechanism 300 includes a first evaporation cavity, a second evaporation cavity, and an annealing cavity that are not connected to each other, the first evaporation cavity is provided with a first source material, the second evaporation cavity is provided with a second source material, the conveying mechanism 200 conveys the passivation unit 100 on which the first passivation layer is deposited to the second evaporation cavity, under the conditions of vacuum and a temperature environment of 20-300°C, the second source material is heated and evaporated to form a gaseous second source material, and the gaseous second source material is deposited on the first passivation layer on the surface to be passivated to form a second passivation layer.

[0089] In this step, three continuous workstations are formed by setting the first evaporation cavity, the second evaporation cavity and the annealing cavity, and the first passivation layer, the second passivation layer and the annealing treatment are sequentially deposited on the passivation surface of the passivation unit 100, thereby facilitating the automatic and continuous production of the passivation unit 100.

[0090] The conveying mechanism 200 conveys the passivation unit 100 on which the second passivation layer is deposited into the annealing cavity.

[0091] In the fifth optional scheme, in the S2 step, the following can be included:

[0092] The evaporation annealing mechanism 300 is also provided with a second source material. Under the vacuum condition and the temperature environment of 20-300 DEG C, the evaporation annealing mechanism 300 heats and evaporates the second source material to form a gaseous second source material, and the gaseous second source material is deposited on the passivation surface to form a second passivation layer.

[0093] After the second passivation layer is deposited on the passivation surface, the evaporation annealing mechanism 300 heats and evaporates the first source material to form a gaseous first source material, and the gaseous first source material is deposited on the second passivation layer to form a first passivation layer.

[0094] In this step, the gaseous first source material is deposited on the second passivation layer on the passivation surface. The gaseous first source material is in a free molecular or ionic state in the evaporation state. During the deposition process, the gaseous first source material can be doped in the second passivation layer and can also penetrate through the second passivation layer to the passivation surface, thereby reducing the probability of the surface recombination of the minority carriers on the passivation surface and the surface recombination rate, and achieving better passivation effect. The second source material can be silicon oxide, titanium oxide, etc., and the application does not make any limitation in this regard.

[0095] Of course, the evaporation annealing mechanism 300 can also be provided with a third source material. After the first passivation layer is deposited on the passivation surface, the evaporation annealing mechanism 300 heats and evaporates the third source material to form a gaseous third source material, and the gaseous third source material is deposited on the first passivation layer to form a protective layer.

[0096] The third source material can be aluminum nitride, silicon oxide, etc., and the application does not make any limitation in this regard.

[0097] In the S2 step, the following can be included in the embodiment of the application:

[0098] The passivation unit 100 is located in the evaporation annealing mechanism 300, the angle between the direction of the passivation surface of the passivation unit 100 and the direction of the gravity is 0-90 DEG, the passivation unit 100 is located above the first source material, and the passivation unit 100 rotates horizontally while the evaporation annealing mechanism 300 deposits the first passivation layer on the passivation unit 100.

[0099] In this step, the passivation unit 100 is located above the first source material, the gaseous first source material formed by heating the first source material rises to form a mist, and the angle formed by the orientation direction of the passivation surface in the passivation unit 100 is 0-90°, of course, it can be 5°, 10°, 15°, 30°, 60° and 90°, etc., to ensure that the passivation surface can be more comprehensive to deposit the first passivation layer, thereby improving the deposition area and deposition effect of the first passivation layer. The horizontal rotation of the passivation unit 100 causes the passivation surface to rotate, and each position in the passivation surface can contact gaseous first source material of different concentrations, so that the first passivation layer deposited on the passivation surface can be more uniform.

[0100] In the embodiment of the present application, the conveying mechanism 200 can convey a plurality of passivation units 100 to the evaporation annealing mechanism 300 to complete the deposition of the first passivation layer, and the evaporation annealing mechanism 300 can sequentially complete the deposition of the first passivation layer and the annealing treatment of a plurality of passivation units 100. Thus, the passivation efficiency is further improved.

[0101] In the embodiment of the present application, in the S2 step, the deposition speed of the gaseous first source material on the passivation surface to deposit the first passivation layer can be 0.1-1.0 nm / s.

[0102] In this step, the deposition speed is 0.1-1.0 nm / s. The time for the gaseous first source material to deposit the first passivation layer on the passivation surface in the passivation unit 100 is basically 60-400 s, compared with the process time of 200-2000 s for depositing the first layer of film by ALD method and the process time of 200-2000 s for depositing the second layer of film by PECVD method in the prior art. The film deposition time of the above steps is shorter, which is beneficial to improve the passivation efficiency of the passivation surface to deposit the first passivation layer.

[0103] In the experiment example 1, a plurality of crystalline silicon-based cell pieces were obtained by only laser non-destructive method.

[0104] Experimental Example 2 is a plurality of crystalline silicon-based cell pieces 121 obtained by a laser non-destructive method. First, the plurality of crystalline silicon-based cell pieces 121 are stacked to form a crystalline silicon-based cell piece group 120, the cross sections of the plurality of crystalline silicon-based cell pieces 121 are coplanar to form a passivation surface A, and then the crystalline silicon-based cell piece group 120 is placed in a fixing tool 110 to form a passivation unit 100, wherein the passivation surface A of the crystalline silicon-based cell piece group 120 is exposed outside the fixing tool 110. Finally, the passivation unit 100 is transported into an evaporation annealing mechanism 300, the evaporation annealing mechanism 300 heats and evaporates a first source material to form a gaseous first source material under vacuum and a temperature environment of 20-300°C, and the gaseous first source material is deposited on the passivation surface A of the passivation unit 100 to form a first passivation layer, thereby obtaining a group of crystalline silicon-based cell piece groups 120.

[0105] Experimental Example 3 is a plurality of crystalline silicon-based cell pieces 121 obtained by a laser non-destructive method. First, the plurality of crystalline silicon-based cell pieces 121 are stacked to form a crystalline silicon-based cell piece group 120, the cross sections of the plurality of crystalline silicon-based cell pieces 121 are coplanar to form a passivation surface A, and then the crystalline silicon-based cell piece group 120 is placed in a fixing tool 110 to form a passivation unit 100, wherein the passivation surface A of the crystalline silicon-based cell piece group 120 is exposed outside the fixing tool 110. Then, the passivation unit 100 is transported into an evaporation annealing mechanism 300, the evaporation annealing mechanism 300 heats and evaporates a first source material to form a gaseous first source material under vacuum and a temperature environment of 20-300°C, and the gaseous first source material is deposited on the passivation surface A of the passivation unit 100 to form a first passivation layer. Finally, the evaporation annealing mechanism 300 anneals the crystalline silicon-based cell piece group in the passivation unit 100 with the deposited first passivation layer under a temperature environment of 100-350°C, thereby obtaining a group of crystalline silicon-based cell piece groups 120.

[0106] Comparative Example 1 is a plurality of crystalline silicon-based cell pieces 121 obtained by a laser non-destructive method. First, the plurality of crystalline silicon-based cell pieces 121 are stacked to form a crystalline silicon-based cell piece group 120, the cross sections of the plurality of crystalline silicon-based cell pieces 121 are coplanar to form a passivation surface A, and then the crystalline silicon-based cell piece group 120 is placed in a fixing tool 110 to form a passivation unit 100, wherein the passivation surface A of the crystalline silicon-based cell piece group 120 is exposed outside the fixing tool 110. Then, the passivation unit 100 is transported into an ALD deposition device to deposit a first layer of passivation film on the passivation surface A. Next, the passivation unit 100 is transported into a PECVD reaction device to deposit a second layer of protective film. Finally, the passivation unit 100 is transported into a photo-injection annealing furnace for annealing treatment, thereby obtaining a group of crystalline silicon-based cell piece groups 120.

[0107] The performance of three pieces of the crystalline silicon-based cell piece 121 in each of the three groups of the crystalline silicon-based cell piece 121 obtained by the laser non-destructive method using the crystalline silicon-based cell piece with a size of 182 mm x 182 mm was randomly selected for characterization.

[0108] The test method was to test each group of the crystalline silicon-based cell piece 121 in Experimental Examples 1-3 under the standard test conditions of 25±2℃ and light intensity of 1000±50 W / m2 using a halm I-V tester, and the test results are shown in the following table:

[0109] In the above table, Eff refers to the conversion efficiency, Voc refers to the open circuit voltage, Isc refers to the short circuit current, P max is the peak power, Im is the working current, and Vm is the peak voltage.

[0110] As can be seen from the above table, by comparing the average conversion efficiency of the three groups in Experimental Example 2 with the average conversion efficiency of the three groups in Experimental Example 1, it can be seen that the crystalline silicon-based cell piece 121 obtained by only using the deposition of the first passivation layer by the evaporation and annealing mechanism 300 under vacuum conditions and a temperature environment of 20℃-300℃ has a conversion efficiency that is about 0.12% higher than that of the crystalline silicon-based cell piece 121 obtained by only using the laser non-destructive method.

[0111] By comparing the average conversion efficiency of the three groups in Experimental Example 3 with the average conversion efficiency of the three groups in Experimental Example 1, it can be seen that the crystalline silicon-based cell piece 121 obtained by using the deposition of the first passivation layer by the evaporation and annealing mechanism 300 under vacuum conditions and a temperature environment of 20℃-300℃, and then annealing the crystalline silicon-based cell piece 121 on which the first passivation layer is deposited under a temperature environment of 100℃-350℃, has a conversion efficiency that is about 0.19% higher than that of the crystalline silicon-based cell piece 121 obtained by only using the laser non-destructive method.

[0112] By comparing the average conversion efficiency of the three groups in Experimental Example 3 with the average conversion efficiency of the three groups in Experimental Example 2, it can be seen that the crystalline silicon-based cell piece 121 obtained by sequentially using the evaporation and annealing processes has a conversion efficiency that is about 0.07% higher than that of the crystalline silicon-based cell piece 121 obtained by only using the evaporation process.

[0113] By comparing the average of the conversion efficiency of the three groups of Comparative Example 1 with the average of the conversion efficiency of the three groups of Experimental Example 1, it can be seen that, compared with the crystalline silicon-based cell wafer fragments 121 obtained by only laser non-destructive method, the conversion efficiency of the crystalline silicon-based cell wafer fragments 121 obtained by sequentially depositing the first passivation film and the second protective film through the ALD deposition equipment and the PECVD reaction equipment and then annealing in the photo-injection annealing furnace is increased by about 0.18%.

[0114] By comparing the average of the conversion efficiency of the three groups of Comparative Example 1 with the average of the conversion efficiency of the three groups of Experimental Example 3, the conversion efficiency is almost the same, which shows that the passivation effect achieved by physical deposition is basically the same as that achieved by chemical deposition, and the process steps of physical deposition are simpler. At the same time, it is found that chemical deposition is prone to plating around, mainly because arc ion plating has good plating around property, which can deposit thin films on polymer substrates with different convex and concave surfaces, especially suitable for coating on samples with uneven surfaces, thereby also easily leading to the reduction of the light exposure area of the front and back surfaces of the crystalline silicon-based cell wafer fragments 121 due to the shielding of the first passivation layer, while physical deposition mainly because the gaseous source material formed presents a similar light incidence deposition mode to the surface to be passivated, and the area to be shielded is not easily plated with the first passivation layer.

[0115] It can be seen that, by using the above-mentioned passivation repair method disclosed in the present application, the conversion efficiency of the crystalline silicon-based cell wafer fragments 121 can be improved by repairing the cross section, and at the same time, compared with the chemical deposition method, the process steps of the passivation repair method disclosed in the present application are simple, the process control factors are less, time and labor are saved, and it is conducive to the scale production of the passivation of the cross section of the crystalline silicon-based cell wafer fragments 121.

[0116] As shown in FIGS. 1-2, the present application also discloses a passivation device for implementing the above-mentioned passivation repair method, the disclosed passivation device comprises a laminating mechanism 400, a wafer carrying mechanism 500, a fixing tool 110, a conveying mechanism 200 and an evaporation annealing mechanism 300, the laminating mechanism 400 is used to stack a plurality of crystalline silicon-based cell wafer fragments 121 to form a crystalline silicon-based cell wafer fragment group 120 as shown in FIG. 3, the wafer carrying mechanism 500 is used to carry the crystalline silicon-based cell wafer fragment group 120 and place it in the fixing tool 110, and the conveying mechanism 200 can carry and drive the fixing tool 110 to move into the evaporation annealing mechanism 300.

[0117] The above structure realizes the passivation repair method by the cooperation between the laminating mechanism 400, the wafer carrying mechanism 500, the fixing tool 110, the conveying mechanism 200 and the evaporation annealing mechanism 300, to realize the automatic and scaled passivation production of the crystalline silicon-based cell wafer fragments 121.

[0118] In addition, the lamination mechanism 400 can be a step-liftable lamination storage hand, which can receive a plurality of the silicon-based cell sub-pieces 121 by lifting the thickness of one silicon-based cell sub-piece 121. Alternatively, the lamination mechanism 400 can include a belt conveyor, a grabbing hand, and a lamination table. The belt conveyor can receive a plurality of the silicon-based cell sub-pieces 121 arranged in an array. The grabbing hand can stack the silicon-based cell sub-pieces 121 on the lamination table. The present application does not limit the above.

[0119] In the embodiments of the present application, the fixing tool 110 can include a cavity with an opening and a fastener. Specifically, the silicon-based cell sub-piece group 120 can be placed in the cavity. The cross sections of the plurality of silicon-based cell sub-pieces 121 in the silicon-based cell sub-piece group 120 are coplanar and exposed to the opening or flush with the end surface of the opening. The fastener is arranged in the cavity and used to fix the silicon-based cell sub-piece group 120 in the cavity, so as to avoid the relative displacement of the plurality of silicon-based cell sub-pieces 121 and the problem of the at least one silicon-based cell sub-piece 121 around the plating in the process of depositing the first passivation layer.

[0120] In the embodiments of the present application, the conveying mechanism 200 can include a conveying conveyor 210 and a carrying hand 220. Specifically, the conveying conveyor 210 can receive and drive the passivation unit 100 to move to the first position. The carrying hand 220 can carry the passivation unit 100 at the first position to the evaporation annealing mechanism 300.

[0121] Although the embodiments of the present application have been shown and described, it should be understood by those ordinary skilled in the art that various changes, modifications, replacements, and variations can be made to the embodiments without departing from the principles and spirits of the present application, and the scope of the present application is defined by the appended claims and their equivalents.

Claims

1. A passivation repair method for a wafering section of a crystalline silicon-based cell, characterized in that, The method comprises the following steps: S1, stacking a plurality of crystalline silicon-based cell segments (121) to form a crystalline silicon-based cell segment group (120), and making the cross sections of the plurality of crystalline silicon-based cell segments (121) coplanar to form a to-be-passivated surface, and placing the crystalline silicon-based cell segment group (120) in a fixing tool (110) to form a passivation unit (100), wherein each to-be-passivated surface is exposed outside the fixing tool (110); S2, providing a conveying mechanism (200) to convey the passivation unit (100) to an evaporation annealing mechanism (300), wherein the evaporation annealing mechanism (300) is provided with a first source material, and the evaporation annealing mechanism (300) is used to heat and evaporate the first source material to form a gaseous first source material under a vacuum condition and a temperature environment of 20-300°C, and the gaseous first source material is used to deposit a first passivation layer on the to-be-passivated surface in the passivation unit (100); S3, the evaporation annealing mechanism (300) is used to anneal the crystalline silicon-based cell segment group (120) in the passivation unit (100) on which the first passivation layer is deposited under a temperature environment of 100-350°C.

2. The passivation repair method of a silicon-based cell wafer section according to claim 1, characterized by, In the step S2, the following steps are included: S21, the evaporation annealing mechanism (300) comprises an evaporation cavity (310) and an annealing cavity (320), the evaporation cavity (310) is not communicated with the annealing cavity (320), and the conveying mechanism (200) is used to convey the passivation unit (100) to the evaporation cavity (310) to deposit the first passivation layer; S22, the conveying mechanism (200) is used to convey the passivation unit (100) on which the first passivation layer is deposited to the annealing cavity (320).

3. The passivation repair method of a silicon-based cell wafer section according to claim 1, characterized by, The evaporation annealing mechanism (300) is provided with a process cavity, and the passivation unit (100) is used to sequentially complete the first passivation layer deposition and the annealing treatment in the process cavity.

4. The passivation repair method of a silicon-based cell wafer section according to claim 1, characterized by, In the step S2, the following steps are included: The to-be-passivated surface in the passivation unit (100) is conveyed to the evaporation annealing mechanism (300) after being cleaned and dried, or the conveying mechanism (200) is used to convey the passivation unit (100) to the evaporation annealing mechanism (300), and the evaporation annealing mechanism (300) is used to simultaneously preheat and vacuumize, and the preheating temperature is 50-150°C.

5. The method according to claim 1, wherein the method is characterized by: In the step S2, the following methods are included for heating and evaporating the first source material to form the gaseous first source material: The evaporation annealing mechanism (300) is provided with an electron beam gun, and the electron beam gun is used to spray an electron beam to bombard the first source material to form the gaseous first source material.

6. The method according to claim 1, wherein the method is characterized by: In the step S2, the following methods are included for heating and evaporating the first source material to form the gaseous first source material: The evaporation annealing mechanism (300) is provided with a resistance heating element, the resistance heating element carries the first source material, and the resistance heating element is used to heat the first source material to form the gaseous first source material.

7. The method according to claim 1, wherein the method is characterized by: In the step S2, the following methods are included for heating and evaporating the first source material to form the gaseous first source material: The evaporation annealing mechanism (300) is provided with a laser emitting element, which emits laser to heat the first source material to form the gaseous first source material.

8. The method according to claim 1, wherein the method is characterized by: In the S2 step, comprising: The evaporation annealing mechanism (300) is further provided with a second source material, after the first passivation layer is deposited on the surface to be passivated, the evaporation annealing mechanism (300) heats and evaporates the second source material to form a gaseous second source material, and the gaseous second source material is deposited on the first passivation layer on the surface to be passivated to form a second passivation layer.

9. The method according to claim 8, wherein the method is characterized by, The evaporation annealing mechanism (300) is further provided with the second source material, after the first passivation layer is deposited on the surface to be passivated, the evaporation annealing mechanism (300) heats and evaporates the second source material to form the gaseous second source material, and the gaseous second source material is deposited on the first passivation layer on the surface to be passivated to form the second passivation layer. The evaporation annealing mechanism (300) comprises a first evaporation cavity, a second evaporation cavity and an annealing cavity (320) which are not connected to each other, the first evaporation cavity is provided with the first source material, the second evaporation cavity is provided with the second source material, the conveying mechanism (200) conveys the passivation unit (100) after the first passivation layer deposition to the second evaporation cavity, under the condition of vacuum and temperature environment of 20-300℃, the second source material is heated and evaporated to form the gaseous second source material, and the gaseous second source material is deposited on the first passivation layer on the surface to be passivated to form the second passivation layer; The conveying mechanism (200) conveys the passivation unit (100) after the second passivation layer deposition to the annealing cavity (320).

10. The method according to claim 1, wherein the method is a passivation repair method for a wafer-silicon-based cell wafer section, characterized by, In the S2 step, comprising: The evaporation annealing mechanism (300) is further provided with a second source material, under the condition of vacuum and temperature environment of 20-300℃, the evaporation annealing mechanism (300) heats and evaporates the second source material to form a gaseous second source material, and the gaseous second source material is deposited on the surface to be passivated to form a second passivation layer; After the second passivation layer is deposited on the surface to be passivated, the evaporation annealing mechanism (300) heats and evaporates the first source material to form the gaseous first source material, and the gaseous first source material is deposited on the second passivation layer to form the first passivation layer.

11. The method according to claim 1, wherein the method is a passivation repair method for a wafer-silicon-based cell wafer section, characterized by, In the S2 step, comprising: The passivation unit (100) is located in the evaporation annealing mechanism (300), the angle between the surface-to-be-passivated surface of the passivation unit (100) and the gravity direction is 0-90°, the passivation unit (100) is located above the first source material, and the passivation unit (100) rotates horizontally while the evaporation annealing mechanism (300) deposits the first passivation layer on the passivation unit (100).

12. The method of claim 1, wherein the method is a method of passivation repair of a silicon-based cell wafer dicing surface. The conveying mechanism (200) can convey a plurality of the passivation units (100) to the evaporation annealing mechanism (300) to complete the first passivation layer deposition. The evaporation annealing mechanism (300) can sequentially complete the first passivation layer deposition and annealing treatment of a plurality of the passivation units (100).

13. The method of claim 1, wherein the method is a method of passivation repair of a silicon-based cell wafer dicing surface. In the S2 step, the deposition rate of the gaseous first source material depositing the first passivation layer on the surface to be passivated is 14. A passivation device for implementing the passivation repair method according to any one of claims 1 to 13, characterized in that, The laminating mechanism (400), the sheet moving mechanism (500), the fixing tool (110), the conveying mechanism (200) and the evaporation annealing mechanism (300) are included. The laminating mechanism (400) is used for laminating a plurality of the crystalline silicon-based cell sheet segments (121) to form a crystalline silicon-based cell sheet segment group (120). The sheet moving mechanism (500) is used for moving the crystalline silicon-based cell sheet segment group (120) to be placed in the fixing tool (110) to form the passivation unit (100). The conveying mechanism (200) can carry and drive the passivation unit (100) to move to the evaporation annealing mechanism (300).

15. The passivation device of claim 13, wherein, The fixing tool (110) includes a cavity with an opening and a fastener. The crystalline silicon-based cell sheet segment group (120) can be placed in the cavity. The sections of a plurality of the crystalline silicon-based cell sheet segments (121) in the crystalline silicon-based cell sheet segment group (120) are coplanar and exposed to the opening or flush with the end surface of the opening. The fastener is arranged in the cavity. The fastener is used for fixing the crystalline silicon-based cell sheet segment group (120) in the cavity.

16. The passivation device of claim 14, wherein, The conveying mechanism (200) includes a conveying channel (210) and a carrying hand (220). The conveying channel (210) can carry and drive the passivation unit (100) to move to the discharge end of the conveying channel (210). The carrying hand (220) carries the passivation unit (100) at the discharge end to the evaporation annealing mechanism (300).

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