Semiconductor device, semiconductor module, and vehicle

Abstract

This semiconductor device is provided with a base material, a first semiconductor element, and a heat dissipation member. The heat dissipation member includes a first heat dissipation body extending in a first direction. The first heat dissipation body has a first base part, a second base part, a first main part, a second main part 714, and a connection part. The first base part and the second base part are supported by the base material. The first main part includes a first cross section and a third cross section. The second main part includes a second cross section and a fourth cross section. A distance L in the first direction from the second cross section to the fourth cross section is equal to a distance in the first direction from the first cross section to the third cross section. An interval in a second direction between the third cross section and the fourth cross section is larger than an interval in the second direction between the first cross section and the second cross section.

Description

Semiconductor device, semiconductor module and vehicle

[0001] The present disclosure relates to a semiconductor device, a semiconductor module including the semiconductor device, and a vehicle equipped with the semiconductor module.

[0002] Patent Document 1 discloses an example of a semiconductor module equipped with a cooler and a semiconductor device. The cooler equipped in the semiconductor module includes a housing having a hollow region and a heat sink. The housing has an opening that leads to the hollow region. The heat sink is attached to the housing so as to close the opening. The semiconductor device is joined to a portion of the heat sink that protrudes from the hollow region. When the hollow region is filled with a liquid refrigerant, the refrigerant comes into contact with the heat sink. This allows the semiconductor device to be cooled.

[0003] In the semiconductor module disclosed in Patent Document 1, the semiconductor device is cooled indirectly via a heat sink. The heat sink is composed of, for example, a plurality of fins. In this case, unless the surface area of ​​each of the plurality of fins is further increased, the heat dissipation performance of the semiconductor module disclosed in Patent Document 1 will be limited.

[0004] International Publication No. 2017 / 094370

[0005] [Summary] An object of the present disclosure is to provide an improved semiconductor device compared to conventional semiconductor devices. In particular, in view of the above circumstances, an object of the present disclosure is to provide a semiconductor device that can further improve the heat dissipation performance of the device.

[0006] A first aspect of the present disclosure provides a semiconductor device comprising: a substrate; a first semiconductor element mounted on one side of the substrate in a first direction; and a heat dissipation member located on the opposite side of the substrate from the first semiconductor element and supported by the substrate. The heat dissipation member includes a first heat dissipation body extending in the first direction. The first heat dissipation body has a first base, a second base, a first main portion, a second main portion, and a connecting portion. The first base and the second base are located adjacent to each other in a second direction perpendicular to the first direction and are supported by the substrate. The first main portion extends from the first base in the first direction. The second main portion is located adjacent to the first main portion in the second direction and extends from the second base in the first direction. The connecting portion is located on the opposite side of the first base and the second base with respect to the first main portion and the second main portion and is connected to the first main portion and the second main portion. The first main portion includes a first cross section that is an interface with the first base portion, and a third cross section that is located between the first cross section and the connecting portion and faces the same side as the first cross section in the first direction. The second main portion includes a second cross section that is an interface with the second base portion, and a fourth cross section that is located between the second cross section and the connecting portion and faces the same side as the second cross section in the first direction. The distance in the first direction from the second cross section to the fourth cross section is equal to the distance in the first direction from the first cross section to the third cross section. The distance in the second direction between the third cross section and the fourth cross section is greater than the distance in the second direction between the first cross section and the second cross section.

[0007] A semiconductor module provided by a second aspect of the present disclosure includes a semiconductor device and a cooler. The semiconductor device is attached to the cooler. The cooler has a hollow housing. The first heat sink is housed in the housing. The semiconductor device further includes a second semiconductor element and a sealing resin in addition to the semiconductor device provided by the first aspect of the present disclosure.

[0008] A vehicle provided by a third aspect of the present disclosure includes a drive source and the semiconductor module provided by the second aspect of the present disclosure, wherein the semiconductor module is electrically connected to the drive source.

[0009] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings.

[0010] FIG. 1 is a plan view of a semiconductor device according to a first embodiment of the present disclosure. FIG. 2 is a plan view corresponding to FIG. 1 , seen through the sealing resin. FIG. 3 is a partial enlarged view of FIG. 2. FIG. 4 is a plan view corresponding to FIG. 1 , with the sealing resin and second conductive member omitted. FIG. 5 is a bottom view of the semiconductor device shown in FIG. 1. FIG. 6 is a right side view of the semiconductor device shown in FIG. 1. FIG. 7 is a left side view of the semiconductor device shown in FIG. 1. FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. 2. FIG. 9 is a partial enlarged view of a first semiconductor element and its periphery shown in FIG. 8. FIG. 10 is a partial enlarged view of a second semiconductor element and its periphery shown in FIG. 8. FIG. 11 is a cross-sectional view taken along line XI-XI in FIG. 2. FIG. 12 is a cross-sectional view taken along line XII-XII in FIG. 2. FIG. 13 is a partial enlarged view of FIG. 5. FIG. 14 is a front view corresponding to FIG. 13. FIG. 15 is a partial enlarged perspective view of a heat dissipation member included in the semiconductor device shown in FIG. 1. FIG. 16 is a cross-sectional view taken along line XVI-XVI in FIG. 13. FIG. 17 is a partially enlarged cross-sectional view of a semiconductor device according to a modified example of the first embodiment of the present disclosure, corresponding to FIG. 16. FIG. 18 is a cross-sectional view of a semiconductor module including the semiconductor device shown in FIG. 1, corresponding to FIG. 8. FIG. 19 is a cross-sectional view of a semiconductor module including the semiconductor device shown in FIG. 1, corresponding to FIG. 11. FIG. 20 is a schematic diagram of a vehicle equipped with the semiconductor module shown in FIG. 18. FIG. 21 is a partially enlarged bottom view of a semiconductor device according to a second embodiment of the present disclosure, corresponding to FIG. 13. FIG. 22 is a front view corresponding to FIG. 21. FIG. 23 is a partially enlarged perspective view of a heat dissipation member included in the semiconductor device shown in FIG. 21. FIG. 24 is a cross-sectional view taken along line XXIV-XXIV in FIG. 21. FIG. 25 is a partially enlarged front view of a semiconductor device according to a third embodiment of the present disclosure, corresponding to FIG. 22. FIG. 26 is a cross-sectional view taken along line XXVI-XXVI in FIG. 25. Fig. 27 is a partially enlarged front view of a semiconductor device according to a modified example of the third embodiment of the present disclosure, and corresponds to Fig. 26. Fig. 28 is a cross-sectional view taken along line XXVIII-XXVIII in Fig. 27. Fig. 29 is a plan view of a semiconductor device according to a fourth embodiment of the present disclosure. Fig. 30 is a bottom view of the semiconductor device shown in Fig. 29. Fig. 31 is a cross-sectional view of a semiconductor module including the semiconductor device shown in Fig. 29, and corresponds to Fig. 8.FIG. 32 is a cross-sectional view of a semiconductor module including the semiconductor device shown in FIG. 29, and corresponds to FIG.

[0011] DETAILED DESCRIPTION The present disclosure will be described in detail with reference to the accompanying drawings.

[0012] First Embodiment: A semiconductor device A10 according to a first embodiment of the present disclosure will be described with reference to FIGS. 1 to 16 . The semiconductor device A10 includes a substrate 11, a first power terminal 12, two second power terminals 13, a third power terminal 14, a fourth power terminal 15, a plurality of first semiconductor elements 21, a plurality of second semiconductor elements 22, a first conductive member 31, a second conductive member 32, a sealing resin 50, and a heat dissipation member 70. The semiconductor device A10 also includes a first signal terminal 161, a second signal terminal 162, a third signal terminal 171, a fourth signal terminal 172, two fifth signal terminals 18, a sixth signal terminal 19, a thermistor 23, a first wiring 61, and a second wiring 62. For ease of understanding, FIGS. 2 and 3 show the sealing resin 50 in a see-through manner. In FIG. 2, the see-through sealing resin 50 is indicated by an imaginary line (double-dashed line). For ease of understanding, the sealing resin 50 and the second conductive member 32 are omitted from FIG.

[0013] In the description of the semiconductor device A10, for convenience, the normal direction to a top surface 51 of a sealing resin 50 (described later) will be referred to as the "first direction z." Furthermore, the direction perpendicular to the first direction z will be referred to as the "second direction x." Furthermore, the direction perpendicular to the first direction z and the second direction x will be referred to as the "third direction y."

[0014] The semiconductor device A10 converts DC power input to the first power terminal 12, the third power terminal 14, and the fourth power terminal 15 into AC power using a plurality of first semiconductor elements 21 and a plurality of second semiconductor elements 22. The converted AC power is input from each of the two second power terminals 13 to a power supply target such as a motor.

[0015] As shown in FIGS. 8 , 11 , and 12 , the base material 11 is located on one side of each of the plurality of first semiconductor elements 21 and the plurality of second semiconductor elements 22 in the first direction z. In the semiconductor device A10, the base material 11 is formed, for example, by active metal brazing (AMB). As shown in FIG. 8 , the base material 11 includes an insulating layer 111, a first conductive layer 112, a second conductive layer 113, and a heat dissipation layer 114. The base material 11 is covered with a sealing resin 50 except for a portion of the heat dissipation layer 114.

[0016] As shown in FIG. 8 , the insulating layer 111 includes a portion interposed between the heat dissipation layer 114 and the first and second conductive layers 112 and 113 in the first direction z. The insulating layer 111 is made of a material with relatively high thermal conductivity. The insulating layer 111 is made of ceramics containing, for example, aluminum nitride (AlN) or silicon nitride (Si3N4). The dimension of the insulating layer 111 in the first direction z is smaller than the dimensions of each of the first and second conductive layers 112 and 113 in the first direction z.

[0017] As shown in FIGS. 8 , 11 , and 12 , the first conductive layer 112 and the second conductive layer 113 are located between the insulating layer 111 and the plurality of first semiconductor elements 21 and the plurality of second semiconductor elements 22 in the first direction z. The first conductive layer 112 and the second conductive layer 113 are bonded to the insulating layer 111. The first conductive layer 112 and the second conductive layer 113 contain copper (Cu). The first conductive layer 112 and the second conductive layer 113 are spaced apart from each other in the second direction x. As shown in FIGS. 8 and 11 , the first conductive layer 112 has a first mounting surface 112A facing the first direction z. The first mounting surface 112A faces the plurality of first semiconductor elements 21. As shown in FIGS. 8 and 12 , the second conductive layer 113 has a second mounting surface 113A facing the same side as the first mounting surface 112A in the first direction z. The second mounting surface 113A faces the plurality of second semiconductor elements 22. When viewed in the first direction z, each of the first conductive layer 112 and the second conductive layer 113 is located inward from the periphery 111A of the insulating layer 111.

[0018] As shown in FIG. 8 , the heat dissipation layer 114 is located on the opposite side of the insulating layer 111 in the first direction z from the first conductive layer 112 and the second conductive layer 113. As shown in FIG. 5 , the heat dissipation layer 114 is exposed from the sealing resin 50. The heat dissipation layer 114 contains copper. The dimension of the heat dissipation layer 114 in the first direction z is larger than the dimension of the insulating layer 111 in the first direction z. As viewed in the first direction z, the heat dissipation layer 114 is located inward from the periphery 111A of the insulating layer 111.

[0019] As shown in FIGS. 4 and 11 , the multiple first semiconductor elements 21 are bonded to the first mounting surface 112A of the first conductive layer 112. The multiple first semiconductor elements 21 are arranged along the third direction y. As shown in FIGS. 4 and 12 , the multiple second semiconductor elements 22 are bonded to the second mounting surface 113A of the second conductive layer 113. The multiple second semiconductor elements 22 are arranged along the third direction y. The multiple first semiconductor elements 21 and the multiple second semiconductor elements 22 are, for example, metal-oxide-semiconductor field-effect transistors (MOSFETs). Alternatively, the multiple first semiconductor elements 21 and the multiple second semiconductor elements 22 may be switching elements such as insulated gate bipolar transistors (IGBTs). Furthermore, the multiple first semiconductor elements 21 may include multiple switching elements and multiple freewheeling diodes individually connected in parallel to these switching elements. Similarly, the second semiconductor elements 22 may also include a plurality of switching elements and a plurality of freewheeling diodes individually connected in parallel to the switching elements. The freewheeling diodes may be, for example, Schottky barrier diodes. In the description of the semiconductor device A10, the first semiconductor elements 21 and the second semiconductor elements 22 are n-channel MOSFETs with a vertical structure. The first semiconductor elements 21 and the second semiconductor elements 22 include a compound semiconductor substrate. The compound semiconductor substrate contains silicon carbide (SiC).

[0020] As shown in FIGS. 4 and 9, each of the plurality of first semiconductor elements 21 has a first electrode 211 , a second electrode 212 , a first gate electrode 213 and a first detection electrode 214 .

[0021] As shown in FIG. 9 , the first electrode 211 faces the first mounting surface 112A of the first conductive layer 112. A current corresponding to the power before being converted by the first semiconductor element 21 flows through the first electrode 211. In other words, the first electrode 211 corresponds to the drain electrode of the first semiconductor element 21. The first electrode 211 is conductively bonded to the first mounting surface 112A via a conductive bonding layer 29. As a result, the first electrode 211 of each of the multiple first semiconductor elements 21 is electrically connected to the first conductive layer 112. The conductive bonding layer 29 is a sintered body of metal particles containing silver (Ag) or the like. Alternatively, the conductive bonding layer 29 may be solder.

[0022] 9 , the second electrode 212 is located on the opposite side of the first conductive layer 112 from the side facing the first mounting surface 112A in the first direction z. Therefore, the first electrode 211 and the second electrode 212 are located on opposite sides of each other in the first direction z. A current corresponding to the power converted by the first semiconductor element 21 flows through the second electrode 212. In other words, the second electrode 212 corresponds to the source electrode of the first semiconductor element 21.

[0023] 4, the first gate electrode 213 is located on the same side as the second electrode 212 in the first direction z. A gate voltage for driving the first semiconductor element 21 is applied to the first gate electrode 213. As shown in FIG. 4, the area of ​​the first gate electrode 213 is smaller than the area of ​​the second electrode 212 when viewed in the first direction z.

[0024] 4 , the first detection electrode 214 is located on the same side as the second electrode 212 and the first gate electrode 213 in the first direction z. The first detection electrode 214 is located adjacent to the first gate electrode 213 in the third direction y. A voltage equivalent to the voltage applied to the second electrode 212 is applied to the first detection electrode 214. When viewed in the first direction z, the area of ​​the first detection electrode 214 is approximately equal to the area of ​​the first gate electrode 213.

[0025] As shown in FIGS. 4 and 10 , each of the plurality of second semiconductor elements 22 has a third electrode 221 , a fourth electrode 222 , a second gate electrode 223 and a second detection electrode 224 .

[0026] 10 , the third electrode 221 faces the second mounting surface 113A of the second conductive layer 113. A current corresponding to the power before being converted by the second semiconductor element 22 flows through the third electrode 221. In other words, the third electrode 221 corresponds to the drain electrode of the second semiconductor element 22. The third electrode 221 is conductively bonded to the second mounting surface 113A via the conductive bonding layer 29. As a result, the third electrode 221 of each of the multiple second semiconductor elements 22 is electrically connected to the second conductive layer 113.

[0027] 10 , the fourth electrode 222 is located on the opposite side of the second conductive layer 113 from the side facing the second mounting surface 113A in the first direction z. Therefore, the third electrode 221 and the fourth electrode 222 are located on opposite sides of each other in the first direction z. A current corresponding to the power converted by the second semiconductor element 22 flows through the fourth electrode 222. In other words, the fourth electrode 222 corresponds to the source electrode of the second semiconductor element 22.

[0028] 4, the second gate electrode 223 is located on the same side as the fourth electrode 222 in the first direction z. A gate voltage for driving the second semiconductor element 22 is applied to the second gate electrode 223. As shown in FIG. 4, the area of ​​the second gate electrode 223 is smaller than the area of ​​the fourth electrode 222 when viewed in the first direction z.

[0029] 4 , the second detection electrode 224 is located on the same side as the fourth electrode 222 and the second gate electrode 223 in the first direction z. The second detection electrode 224 is located on both sides of the second gate electrode 223 in the third direction y. A voltage equivalent to the voltage applied to the fourth electrode 222 is applied to the second detection electrode 224. When viewed in the first direction z, the area of ​​the second detection electrode 224 is approximately equal to the area of ​​the second gate electrode 223.

[0030] As shown in FIGS. 4 and 8 , the first power terminal 12 is located on the opposite side of the second semiconductor elements 22 from the first semiconductor elements 21 in the second direction x. The first power terminal 12 is conductively bonded to the first conductive layer 112. This electrically connects the first power terminal 12 to the first electrodes 211 of the first semiconductor elements 21 via the first conductive layer 112. The first power terminal 12 is a P terminal (positive electrode) to which DC power to be converted is input. The first power terminal 12 extends from the first conductive layer 112 in the second direction x. The first power terminal 12 has a first covering portion 121 and a first exposed portion 122. As shown in FIG. 8 , the first covering portion 121 is conductively bonded to the first conductive layer 112 and is covered with sealing resin 50. The first exposed portion 122 extends from the first covering portion 121 in the second direction x and protrudes from the sealing resin 50.

[0031] As shown in FIG. 4 , each of the two second power terminals 13 is located on the opposite side of the first conductive layer 112 from the second conductive layer 113 in the second direction x. As shown in FIG. 8 , each of the two second power terminals 13 is conductively bonded to the second conductive layer 113. As a result, each of the two second power terminals 13 is electrically connected to the third electrodes 221 of the multiple second semiconductor elements 22 via the second conductive layer 113. AC power converted by the multiple first semiconductor elements 21 and the multiple second semiconductor elements 22 is output from each of the two second power terminals 13. In the semiconductor device A10, the two second power terminals 13 are spaced apart from each other in the third direction y. As shown in FIG. 2 , each of the two second power terminals 13 has a second covering portion 131 and a second exposed portion 132. The second covering portion 131 is conductively bonded to the second conductive layer 113 and is covered with a sealing resin 50. The second exposed portion 132 extends from the second covered portion 131 in the second direction x and protrudes from the sealing resin 50 .

[0032] As shown in FIG. 4 , the third power terminal 14 is located on the opposite side of the second semiconductor elements 22 from the first semiconductor elements 21 in the second direction x. The third power terminal 14 is located on one side of the first power terminal 12 in the third direction y. The third power terminal 14 is electrically connected to the fourth electrodes 222 of the second semiconductor elements 22. The third power terminal 14 is an N terminal (negative electrode) to which DC power to be converted is input. The third power terminal 14 has a third covering portion 141 and a third exposed portion 142. The third covering portion 141 is spaced apart from the first conductive layer 112 and is covered with the sealing resin 50. The third exposed portion 142 extends from the third covering portion 141 in the second direction x and protrudes from the sealing resin 50.

[0033] As shown in FIG. 4 , the fourth power terminal 15 is located on the opposite side of the second semiconductor elements 22 from the first semiconductor elements 21 in the second direction x. The fourth power terminal 15 is located on the opposite side of the third power terminal 14 from the first power terminal 12 in the third direction y. Therefore, the first power terminal 12 is located between the third power terminal 14 and the fourth power terminal 15 in the third direction y. The fourth power terminal 15 is electrically connected to the fourth electrodes 222 of the second semiconductor elements 22. Like the third power terminal 14, the fourth power terminal 15 is the N terminal described above. The fourth power terminal 15 has a fourth covering portion 151 and a fourth exposed portion 152. The fourth covering portion 151 is spaced apart from the first conductive layer 112 and is covered by the sealing resin 50. The fourth exposed portion 152 extends from the fourth covering portion 151 in the second direction x and protrudes from the sealing resin 50.

[0034] As shown in Fig. 8 , the first wiring 61 is bonded to the first mounting surface 112A of the first conductive layer 112. The first wiring 61 is located on the opposite side of the second semiconductor elements 22 from the first semiconductor elements 21 in the second direction x. The first wiring 61 is electrically connected to the first semiconductor elements 21 and the first conductive layer 112. As shown in Figs. 3 and 8 , the first wiring 61 has a first mounting layer 611, a first metal layer 612, two first gate wiring layers 613, a first detection wiring layer 614, and a second detection wiring layer 616.

[0035] 3 , the first mounting layer 611 mounts two first gate wiring layers 613, a first detection wiring layer 614, and a second detection wiring layer 616. The first mounting layer 611 is an insulator. The first mounting layer 611 is made of, for example, ceramics. Alternatively, the first mounting layer 611 may be made of an insulating resin sheet.

[0036] 8 , the first metal layer 612 is located on a side of the first conductive layer 112 facing the first mounting surface 112A with respect to the first mounting layer 611 in the first direction z. The first metal layer 612 is bonded to the first mounting layer 611. The first metal layer 612 contains copper. The first metal layer 612 is bonded to the first mounting surface 112A via a first bonding layer 68. The first bonding layer 68 is, for example, solder.

[0037] As shown in FIGS. 3 and 8 , the two first gate wiring layers 613 are located on the opposite side of the first mounting layer 611 from the first metal layer 612. The two first gate wiring layers 613 are bonded to the first mounting layer 611. Of the two first gate wiring layers 613, one of the first gate wiring layers 613 is conductively bonded to a plurality of first wires 41. The plurality of first wires 41 are individually conductively bonded to the first gate electrodes 213 of the plurality of first semiconductor elements 21. Furthermore, a plurality of sixth wires 46 are conductively bonded to each of the two first gate wiring layers 613. As a result, each of the two first gate wiring layers 613 is electrically connected to the first gate electrodes 213 of the plurality of first semiconductor elements 21.

[0038] 3 and 8 , the first detection wiring layer 614 is located on the opposite side of the first mounting layer 611 from the first metal layer 612. The first detection wiring layer 614 is bonded to the first mounting layer 611. A plurality of second wires 42 are conductively bonded to the first detection wiring layer 614. Furthermore, the plurality of second wires 42 are individually conductively bonded to the first detection electrodes 214 of the plurality of first semiconductor elements 21. As a result, the first detection wiring layer 614 is electrically connected to the first detection electrodes 214 of the plurality of first semiconductor elements 21.

[0039] 3 and 8 , the second detection wiring layer 616 is located on the opposite side of the first metal layer 612 with respect to the first mounting layer 611. The second detection wiring layer 616 is bonded to the first mounting layer 611. A third wire 43 is conductively bonded to the second detection wiring layer 616. The third wire 43 is further conductively bonded to the first mounting surface 112A of the first conductive layer 112. This provides electrical continuity between the second detection wiring layer 616 and the first conductive layer 112.

[0040] As shown in Fig. 8 , the second wiring 62 is bonded to the second mounting surface 113A of the second conductive layer 113. The second wiring 62 is located on the opposite side of the second semiconductor elements 22 from the first semiconductor elements 21 in the second direction x. The second wiring 62 is electrically connected to the second semiconductor elements 22 and the second conductive layer 113. As shown in Figs. 3 and 8 , the second wiring 62 has a second mounting layer 621, a second metal layer 622, two second gate wiring layers 623, a third detection wiring layer 624, and two temperature detection wiring layers 625.

[0041] 3 , the second mounting layer 621 includes two second gate wiring layers 623, a third detection wiring layer 624, and two temperature detection wiring layers 625. The second mounting layer 621 is an insulator. For example, the second mounting layer 621 is made of ceramics. Alternatively, the second mounting layer 621 may be made of an insulating resin sheet.

[0042] 8 , the second metal layer 622 is located on the side facing the second mounting surface 113A of the second conductive layer 113 with the second mounting layer 621 as the reference in the first direction z. The second metal layer 622 is bonded to the second mounting layer 621. The second metal layer 622 contains copper. The second metal layer 622 is bonded to the second mounting surface 113A via the first bonding layer 68.

[0043] As shown in FIGS. 3 and 8 , the two second gate wiring layers 623 are located on the opposite side of the second metal layer 622 with respect to the second mounting layer 621. The two second gate wiring layers 623 are bonded to the second mounting layer 621. A plurality of fourth wires 44 are conductively bonded to one of the two second gate wiring layers 623. The plurality of fourth wires 44 are individually conductively bonded to the second gate electrodes 223 of the second semiconductor elements 22. Furthermore, a plurality of seventh wires 47 are conductively bonded to each of the two second gate wiring layers 623. As a result, each of the two second gate wiring layers 623 is electrically connected to the second gate electrodes 223 of the second semiconductor elements 22.

[0044] 3 and 8 , the third detection wiring layer 624 is located on the opposite side of the second metal layer 622 with respect to the second mounting layer 621. The third detection wiring layer 624 is bonded to the second mounting layer 621. A plurality of fifth wires 45 are conductively bonded to the third detection wiring layer 624. Furthermore, the plurality of fifth wires 45 are individually conductively bonded to the second detection electrodes 224 of the plurality of second semiconductor elements 22. As a result, the third detection wiring layer 624 is electrically connected to the second detection electrodes 224 of the plurality of second semiconductor elements 22.

[0045] 3 and 8 , the two temperature detection wiring layers 625 are located on the opposite side of the second mounting layer 621 from the second metal layer 622. The two temperature detection wiring layers 625 are bonded to the second mounting layer 621. The two temperature detection wiring layers 625 are adjacent to each other in a direction perpendicular to the first direction z.

[0046] 8 , each of the multiple sleeves 63 is conductively bonded to either the first wiring 61 or the second wiring 62 via a second bonding layer 69. The second bonding layer 69 is, for example, solder. The multiple sleeves 63 are made of a conductive material such as metal. Each of the multiple sleeves 63 has a cylindrical shape extending in the first direction z.

[0047] 3, the thermistor 23 is conductively joined to the two temperature detection wiring layers 625 of the second wiring 62. The thermistor 23 is used as a temperature detection sensor for the semiconductor device A10.

[0048] As shown in FIG. 1 , the first signal terminal 161, the second signal terminal 162, the third signal terminal 171, the fourth signal terminal 172, the two fifth signal terminals 18, and the sixth signal terminal 19 are formed as metal pins extending in the first direction z. These terminals protrude from a top surface 51 of a sealing resin 50 (described later). Furthermore, these terminals are individually press-fitted into a plurality of sleeves 63. As a result, each of these terminals is supported by one of the plurality of sleeves 63 and is electrically connected to one of the first wiring 61 and the second wiring 62.

[0049] 3 , the first signal terminal 161 is press-fitted into one of the multiple sleeves 63 that is conductively joined to one of the two first gate wiring layers 613 of the first wiring 61. As a result, the first signal terminal 161 is electrically connected to the first gate electrodes 213 of the multiple first semiconductor elements 21 via the two first gate wiring layers 613. A gate voltage for driving the multiple first semiconductor elements 21 is applied to the first signal terminal 161.

[0050] 3 , the second signal terminal 162 is press-fitted into one of the multiple sleeves 63 that is conductively joined to one of the two second gate wiring layers 623 of the second wiring 62. As a result, the second signal terminal 162 is electrically connected to the second gate electrodes 223 of the multiple second semiconductor elements 22 via the two second gate wiring layers 623. A gate voltage for driving the multiple second semiconductor elements 22 is applied to the second signal terminal 162.

[0051] As shown in Fig. 1 , the third signal terminal 171 is located adjacent to the first signal terminal 161 in the third direction y. As shown in Fig. 3 and 8 , the third signal terminal 171 is press-fitted into one of the multiple sleeves 63 that is conductively joined to the first detection wiring layer 614 of the first wiring 61. This allows the third signal terminal 171 to be electrically connected to the first detection electrodes 214 of each of the multiple first semiconductor elements 21 via the first detection wiring layer 614. A voltage equivalent to the voltage applied to the first detection electrodes 214 of each of the multiple first semiconductor elements 21 is applied to the third signal terminal 171.

[0052] 1 , the fourth signal terminal 172 is located adjacent to the second signal terminal 162 in the third direction y. As shown in FIGS. 3 and 8 , the fourth signal terminal 172 is press-fitted into one of the multiple sleeves 63 that is conductively joined to the third detection wiring layer 624 of the second wiring 62. This allows the fourth signal terminal 172 to be electrically connected to the second detection electrodes 224 of each of the multiple second semiconductor elements 22 via the third detection wiring layer 624. A voltage equivalent to the voltage applied to the second detection electrodes 224 of each of the multiple second semiconductor elements 22 is applied to the fourth signal terminal 172.

[0053] As shown in Fig. 1 , the two fifth signal terminals 18 are located on the opposite side of the second signal terminal 162 from the fourth signal terminal 172 in the third direction y. The two fifth signal terminals 18 are adjacent to each other in the third direction y. As shown in Fig. 3 , the two fifth signal terminals 18 are individually press-fitted into two of the multiple sleeves 63 that are individually conductively bonded to the two temperature detection wiring layers 625 of the second wiring 62. As a result, the two fifth signal terminals 18 are electrically connected to the thermistor 23.

[0054] As shown in Fig. 1 , the sixth signal terminal 19 is located on the opposite side of the first signal terminal 161 in the third direction y with respect to the third signal terminal 171. As shown in Fig. 3 , the sixth signal terminal 19 is press-fitted into one of the multiple sleeves 63 that is conductively joined to the second detection wiring layer 616 of the first wiring 61. This provides electrical continuity between the sixth signal terminal 19 and the first conductive layer 112 via the second detection wiring layer 616. A voltage equivalent to the DC power input to the first power terminal 12 and the two third power terminals 14 is applied to the sixth signal terminal 19.

[0055] As shown in FIGS. 4 and 9 , the first conductive member 31 is conductively bonded to the second electrodes 212 of the plurality of first semiconductor elements 21 and the second mounting surface 113A of the second conductive layer 113. This allows the second electrodes 212 of each of the plurality of first semiconductor elements 21 to be electrically connected to the second conductive layer 113. The first conductive member 31 contains copper. The first conductive member 31 is a metal clip. As shown in FIG. 4 , the first conductive member 31 has a first main portion 311, a plurality of first bonding portions 312, a plurality of first connecting portions 313, a plurality of second bonding portions 314, and a plurality of second connecting portions 315.

[0056] The first main portion 311 forms a main portion of the first conductive member 31. As shown in Fig. 4 , the first main portion 311 extends in the third direction y. As shown in Fig. 8 , the first main portion 311 straddles between the first conductive layer 112 and the second conductive layer 113.

[0057] As shown in FIGS. 4 and 9 , each of the plurality of first bonding portions 312 is conductively bonded to the second electrode 212 of one of the plurality of first semiconductor elements 21 .

[0058] As shown in Fig. 4 , the multiple first connecting portions 313 are connected to the first main portion 311 and the multiple first joint portions 312. The multiple first connecting portions 313 are spaced apart from one another in the third direction y. As shown in Fig. 9 , when viewed in the third direction y, the multiple first connecting portions 313 are inclined in a direction away from the first mounting surface 112A of the first conductive layer 112 as they extend from the multiple first joint portions 312 toward the first main portion 311.

[0059] 4 and 8, the plurality of second bonding portions 314 are conductively bonded to the second mounting surface 113A of the second conductive layer 113. The second bonding portions 314 are arranged along the third direction y.

[0060] 4 and 8 , one side of each of the second connecting portions 315 in the second direction x is connected to the first main portion 311. In addition, the other side of each of the second connecting portions 315 in the second direction x is individually connected to the second joint portions 314. When viewed in the third direction y, the second connecting portion 315 is inclined in a direction away from the second mounting surface 113A of the second conductive layer 113 as it extends from the second joint portion 314 toward the first main portion 311.

[0061] 9 , a conductive bonding layer 29 is located between the second electrode 212 of each of the multiple first semiconductor elements 21 and each of the multiple first bonding portions 312. The conductive bonding layer 29 conductively bonds one of the multiple first bonding portions 312 to one of the multiple first semiconductor elements 21. As shown in FIG. 8 , a conductive bonding layer 29 is located between the second mounting surface 113A of the second conductive layer 113 and each of the multiple second bonding portions 314. The conductive bonding layer 29 conductively bonds the second mounting surface 113A to the multiple second bonding portions 314.

[0062] As shown in FIG. 10 , the second conductive member 32 is conductively bonded to the second electrodes 212 of the plurality of second semiconductor elements 22 and the third covering portions 141 of the two third power terminals 14. As a result, the second electrodes 212 of each of the plurality of second semiconductor elements 22 are electrically connected to the two third power terminals 14. The second conductive member 32 contains copper. The second conductive member 32 is a metal clip. As shown in FIG. 3 , the second conductive member 32 has two second main portions 321, a plurality of third joint portions 322, a plurality of third connecting portions 323, two fourth joint portions 324, two fourth connecting portions 325, a plurality of intermediate portions 326, and a cross beam portion 327.

[0063] 3, the two second main portions 321 are spaced apart from each other in the third direction y. The two second main portions 321 extend in the second direction x. As shown in Fig. 8, the two second main portions 321 are located on the opposite side of the first conductive layer 112 and the second conductive layer 113 from the first conductive member 31 in the first direction z.

[0064] 3, the intermediate portions 326 are located between two second main portions 321 in the third direction y. The intermediate portions 326 are arranged along the third direction y. Each of the intermediate portions 326 extends in the second direction x.

[0065] As shown in FIGS. 3 and 10 , each of the plurality of third bonding portions 322 is conductively bonded to the second electrode 212 of one of the plurality of second semiconductor elements 22 .

[0066] 3 , one side of each of the plurality of third connecting portions 323 in the third direction y is connected to one of the plurality of third joint portions 322. In addition, the other side of each of the plurality of third connecting portions 323 in the third direction y is connected to one of the two second main portions 321 and one of the plurality of intermediate portions 326. When viewed in the second direction x, each of the plurality of third connecting portions 323 is inclined in a direction away from the second mounting surface 113A of the second conductive layer 113 as it moves from one of the plurality of third joint portions 322 toward one of the two second main portions 321 and one of the plurality of intermediate portions 326.

[0067] As shown in FIG. 3 , the two fourth joint portions 324 are conductively joined to the third covering portion 141 of the third power terminal 14 and the fourth covering portion 151 of the fourth power terminal 15 , respectively.

[0068] 3 , one side of each of the two fourth connecting portions 325 in the second direction x is connected to two fourth joint portions 324. In addition, the other side of each of the two fourth connecting portions 325 in the second direction x is individually connected to two second main portions 321. When viewed in the third direction y, the two fourth connecting portions 325 are inclined in a direction away from the first mounting surface 112A of the first conductive layer 112 as they move from the two fourth joint portions 324 toward the two second main portions 321.

[0069] 3 , the cross beam portion 327 is located between the two second main portions 321 in the third direction y. The cross beam portion 327 extends in the third direction y. Both sides of the cross beam portion 327 in the third direction y are connected to the two second main portions 321. When viewed in the first direction z, the cross beam portion 327 overlaps the first conductive member 31. A plurality of intermediate portions 326 are connected to the side of the cross beam portion 327 in the second direction x where the plurality of second semiconductor elements 22 are located.

[0070] 10 , the conductive bonding layer 29 is located between the fourth electrode 222 of each of the multiple second semiconductor elements 22 and each of the multiple third bonding portions 322. The conductive bonding layer 29 conductively bonds one of the multiple third bonding portions 322 to one of the multiple second semiconductor elements 22.

[0071] As shown in FIGS. 8 , 11 , and 12 , the sealing resin 50 covers the insulating layer 111, the first conductive layer 112, the second conductive layer 113, the plurality of first semiconductor elements 21, the plurality of second semiconductor elements 22, the first conductive member 31, and the second conductive member 32. The sealing resin 50 also covers the heat dissipation layer 114, the first power terminal 12, the third power terminal 14, the fourth power terminal 15, and portions of each of the two second power terminals 13. The sealing resin 50 has electrical insulation properties. The sealing resin 50 is made of a material containing, for example, black epoxy resin. As shown in FIGS. 1 and 5 to 7 , the sealing resin 50 has a top surface 51, a bottom surface 52, a first side surface 53, a second side surface 54, and two recesses 55.

[0072] 8, the top surface 51 faces the same side as the first mounting surface 112A of the first conductive layer 112 in the first direction z. The bottom surface 52 faces the opposite side from the top surface 51 in the first direction z. As shown in FIG. 5, the heat dissipation layer 114 of the base material 11 is exposed from the bottom surface 52.

[0073] 1 and 5 to 7 , the first side surface 53 and the second side surface 54 are spaced apart from each other in the second direction x. The first side surface 53 and the second side surface 54 face opposite each other in the second direction x. A first exposed portion 122 of the first power terminal 12, a third exposed portion 142 of the third power terminal 14, and a fourth exposed portion 152 of the fourth power terminal 15 protrude from the first side surface 53. A second exposed portion 132 of each of the two second power terminals 13 protrudes from the second side surface 54.

[0074] 1 and 5 , the two recesses 55 are recessed from the first side surface 53 in the second direction x. The two recesses 55 extend from the top surface 51 to the bottom surface 52 in the first direction z. The two recesses 55 are located on both sides of the first power terminal 12 in the third direction y.

[0075] As shown in FIGS. 8 , 11 , and 12 , the heat dissipation member 70 is located on the opposite side of the base material 11 in the first direction z from the plurality of first semiconductor elements 21 and the plurality of second semiconductor elements 22. As shown in FIGS. 6 , 8 , 11 , and 12 , the heat dissipation member 70 is supported by the heat dissipation layer 114 of the base material 11. The heat dissipation member 70 is used to cool the semiconductor device A10. The heat dissipation member 70 contains metal. The heat dissipation member 70 is made of a material containing, for example, aluminum (Al) or copper. The heat dissipation member 70 includes a plurality of heat sinks 71. The plurality of heat sinks 71 are supported by the heat dissipation layer 114. Each of the plurality of heat sinks 71 extends in the first direction z. The plurality of heat sinks 71 are arranged in a matrix along each of the second direction x and the third direction y.

[0076] As shown in FIGS. 13 and 15 , the multiple heat dissipators 71 include a first heat dissipator 71A, a second heat dissipator 71B, and a third heat dissipator 71C. The second heat dissipator 71B is located adjacent to the first heat dissipator 71A in the second direction x. The third heat dissipator 71C is located on one side of the first heat dissipator 71A in the third direction y. The shapes and sizes of the second heat dissipator 71B and the third heat dissipator 71C are the same (or substantially the same) as those of the first heat dissipator 71A. When viewed in the third direction y, the third heat dissipator 71C overlaps the first heat dissipator 71A. In the following description, unless otherwise specified, the multiple heat dissipators 71 are considered to include the first heat dissipator 71A, the second heat dissipator 71B, and the third heat dissipator 71C.

[0077] As shown in FIGS. 13 , 15 , and 16 , each of the multiple heat sinks 71 has a first base portion 711, a second base portion 712, a first main portion 713, a second main portion 714, and a connecting portion 715. The first base portion 711 and the second base portion 712 are located adjacent to each other in the second direction x. The first base portion 711 and the second base portion 712 are supported by the heat dissipation layer 114 of the substrate 11. In the semiconductor device A10, the first base portion 711 and the second base portion 712 are joined to the heat dissipation layer 114 by laser welding or the like. The first main portion 713 extends from the first base portion 711 in the first direction z. The second main portion 714 is located adjacent to the first main portion 713 in the third direction y. The second main portion 714 extends from the second base portion 712 in the first direction z. The connecting portion 715 is located on the opposite side of the first base portion 711 and the second base portion 712 with respect to the first main portion 713 and the second main portion 714 in the first direction z. The connecting portion 715 is connected to the first main portion 713 and the second main portion 714.

[0078] 16 , the first main portion 713 includes a first cross section S1, a third cross section S3, and a fifth cross section S5. The first cross section S1 is the boundary surface between the first base portion 711 and the first main portion 713. The third cross section S3 is located between the first cross section S1 and the connecting portion 715. The third cross section S3 faces the same side as the first cross section S1 in the first direction z. The fifth cross section S5 is the boundary surface between the first main portion 713 and the connecting portion 715. Therefore, the third cross section S3 is located between the first cross section S1 and the fifth cross section S5.

[0079] As shown in FIG. 16 , the second main portion 714 includes a second cross section S2, a fourth cross section S4, and a sixth cross section S6. The second cross section S2 is the boundary surface between the second base portion 712 and the second main portion 714. The fourth cross section S4 is located between the second cross section S2 and the connecting portion 715. The fourth cross section S4 faces the same side as the second cross section S2 in the first direction z. The sixth cross section S6 is the boundary surface between the second main portion 714 and the connecting portion 715. Therefore, the fourth cross section S4 is located between the second cross section S2 and the sixth cross section S6. The distance L in the first direction z from the second cross section S2 to the fourth cross section S4 is equal to the distance in the first direction z from the first cross section S1 to the third cross section S3.

[0080] As shown in FIG. 16 , the distance d2 in the second direction x between the third cross section S3 and the fourth cross section S4 is greater than the distance d1 in the second direction x between the first cross section S1 and the second cross section S2. Furthermore, the distance d3 in the second direction x between the sixth cross section S6 and the fifth cross section S5 is greater than the distance d2 in the second direction x between the third cross section S3 and the fourth cross section S4. The distance d1 in the second direction x between the first cross section S1 and the second cross section S2 is zero. Therefore, the first cross section S1 and the second cross section S2 are in contact with each other. The distance d3 in the second direction x between the sixth cross section S6 and the fifth cross section S5 is greater than or equal to the dimension in the second direction x of each of the first main portion 713 and the second main portion 714.

[0081] 16 , each of the plurality of heat dissipating bodies 71 is provided with a flow-down region 719. The flow-down region 719 is surrounded by the first main portion 713, the second main portion 714, and the connecting portion 715. The flow-down region 719 is hollow.

[0082] As shown in FIG. 16, the second base portion 712 of the first heat dissipation body 71A and the first base portion 711 of the second heat dissipation body 71B are connected to each other.

[0083] Next, a semiconductor device A11 according to a modification of the semiconductor device A10 will be described with reference to Fig. 17. The cross-sectional position in Fig. 17 corresponds to the cross-sectional position in Fig. 16.

[0084] The semiconductor device A11 differs from the semiconductor device A10 in the configuration of each of the plurality of heat sinks 71 of the heat sink member 70.

[0085] As shown in Figure 17, the connecting portion 715 of each of the multiple heat sinks 71 bulges out in the first direction z on the side opposite to the side on which the first base portion 711 and the second base portion 712 are located, based on the first main portion 713 and the second main portion 714.

[0086] Next, a semiconductor module B10 will be described with reference to Figures 18 and 19. The semiconductor module B10 includes a semiconductor device A10 and a cooler 80. The cross-sectional position in Figure 18 corresponds to the cross-sectional position in Figure 8, which shows the semiconductor device A10. The cross-sectional position in Figure 19 corresponds to the cross-sectional position in Figure 11, which shows the semiconductor device A10.

[0087] 18 and 19 , the cooler 80 is located on the opposite side of the base material 11 in the first direction z from the plurality of first semiconductor elements 21 and the plurality of second semiconductor elements 22. The cooler 80 is used to cool the semiconductor device A10. The cooler 80 contains a metal. The cooler 80 is made of a material containing aluminum, for example.

[0088] 18 and 19 , the cooler 80 has a support surface 80A and an accommodating portion 81. The support surface 80A faces the same side as the top surface 51 of the sealing resin 50 in the first direction z. The support surface 80A faces the bottom surface 52 of the sealing resin 50. The accommodating portion 81 is recessed from the support surface 80A. The accommodating portion 81 is hollow. A liquid refrigerant flows downward in the third direction y into the accommodating portion 81. When viewed in the first direction z, the support surface 80A surrounds the accommodating portion 81.

[0089] The semiconductor device A10 is attached to the support surface 80A of the cooler 80 via a sealant 89. The sealant 89 is sandwiched between the support surface 80A and the bottom surface 52 of the sealing resin 50. The sealant 89 is made of a material containing, for example, ethylene propylene rubber. The multiple heat dissipating bodies 71 of the heat dissipating member 70 are housed in a housing portion 81 of the cooler 80. The refrigerant flowing down the housing portion 81 passes through the flow-down region 719 of each of the multiple heat dissipating bodies 71 shown in FIG. 16 .

[0090] Next, a vehicle C equipped with the semiconductor module B10 will be described with reference to Fig. 20. The vehicle C is, for example, an electric vehicle (EV).

[0091] As shown in Fig. 20, vehicle C includes an on-board charger 91, a storage battery 92, and a drive system 93. Power is supplied to the on-board charger 91 wirelessly from a power supply facility (not shown) installed outdoors. Alternatively, power may be supplied from the power supply facility to the on-board charger 91 via a wired connection. The on-board charger 91 is configured with a step-up DC-DC converter. The voltage of the power supplied to the on-board charger 91 is stepped up by the converter and then supplied to the storage battery 92. The stepped-up voltage is, for example, 600 V.

[0092] The drive system 93 drives the vehicle C. The drive system 93 includes an inverter 931 and a drive source 932. The semiconductor module B10 constitutes part of the inverter 931. Power stored in the storage battery 92 is supplied to the inverter 931. The power supplied from the storage battery 92 to the inverter 931 is DC power. Alternatively, unlike the power system shown in FIG. 20 , a step-up DC-DC converter may be further provided between the storage battery 92 and the inverter 931. The inverter 931 converts DC power into AC power. The inverter 931 including the semiconductor module B10 is connected to the drive source 932. The drive source 932 includes an AC motor and a transmission. When the AC power converted by the inverter 931 is supplied to the drive source 932, the AC motor rotates and the rotation is transmitted to the transmission. The transmission appropriately reduces the rotation speed transmitted from the AC motor and then rotates the drive shaft of the vehicle C. This drives the vehicle C. To drive the vehicle C, it is necessary to freely control the rotation speed of the AC motor based on information such as the amount of fluctuation in the accelerator pedal. Therefore, the semiconductor module B10 in the inverter 931 is necessary to output AC power whose frequency is appropriately changed to correspond to the required rotation speed of the AC motor.

[0093] Next, the effects of the semiconductor device A10 will be described.

[0094] The semiconductor device A10 includes a substrate 11, a first semiconductor element 21, and a heat dissipation member 70. The heat dissipation member 70 includes a first heat sink 71A extending in a first direction z. The first heat sink 71A has a first base portion 711, a second base portion 712, a first main portion 713, a second main portion 714, and a connecting portion 715. The first main portion 713 includes a first cross section S1 and a third cross section S3. The second main portion 714 includes a second cross section S2 and a fourth cross section S4. The distance d2 in the second direction x between the third cross section S3 and the fourth cross section S4 is greater than the distance d1 in the second direction x between the first cross section S1 and the second cross section S2. This configuration further increases the surface area of ​​the first heat sink 71A. 18 and 19, the surface area of ​​the first heat sink 71A that comes into contact with the refrigerant is further increased, thereby further improving the heat dissipation performance of the semiconductor device A10. Therefore, with this configuration, the semiconductor device A10 can achieve further improvement in the heat dissipation performance of the semiconductor device A10.

[0095] The heat dissipation member 70 includes a second heat dissipation body 71B. In the first heat dissipation body 71A, the first cross section S1 and the second cross section S2 are in contact with each other. This configuration can further reduce the gap in the second direction x between the second main portion 714 of the first heat dissipation body 71A and the first main portion 713 of the second heat dissipation body 71B. This allows the overall surface area of ​​the heat dissipation member 70 to be expanded more efficiently. Furthermore, the area of ​​the interface between the heat dissipation layer 114 and the heat dissipation member 70 can be further expanded, thereby further increasing the amount of heat transferred from the heat dissipation layer 114 to the heat dissipation member 70.

[0096] The first main portion 713 and the second main portion 714 of the first heat dissipation body 71A each include a fifth cross section S5 and a sixth cross section S6, which are boundaries with the connecting portion 715. The distance d3 in the second direction x between the fifth cross section S5 and the sixth cross section S6 is greater than the distance d2 in the second direction x between the third cross section S3 and the fourth cross section S4. With this configuration, in the semiconductor module B10, the flow velocity distribution in the first direction z of the coolant passing through the flow-down region 719 of the first heat dissipation body 71A shown in FIG. 16 increases as the coolant approaches the first base portion 711 and the second base portion 712. In the first heat dissipation body 71A, the first base portion 711 and the second base portion 712 located near the substrate 11 each have a relatively high temperature. Therefore, with this configuration, the first base portion 711 and the second base portion 712 can be cooled more efficiently. In order to achieve this effect, it is preferable that the distance d3 in the second direction x between the fifth cross section S5 and the sixth cross section S6 be greater than or equal to the dimension in the second direction x of each of the first main portion 713 and the second main portion 714.

[0097] The semiconductor device A10 further includes a sealing resin 50 that covers the first semiconductor element 21, and a first signal terminal 161 that is electrically connected to the first gate electrode 213 of the first semiconductor element 21. A portion of the first signal terminal 161 protrudes from a top surface 51 of the sealing resin 50. With this configuration, when a control board that is electrically connected to the first signal terminal 161 is arranged in the semiconductor module B10, the arrangement of the control board becomes more compact.

[0098] Second Embodiment: A semiconductor device A20 according to a second embodiment of the present disclosure will be described with reference to Figures 21 to 24. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are given the same reference numerals, and duplicated descriptions will be omitted. Here, the illustrated range in Figure 21 corresponds to the illustrated range in Figure 13, which shows the semiconductor device A10.

[0099] In the semiconductor device A20, the configuration of each of the plurality of heat sinks 71 of the heat sink member 70 differs from that of the semiconductor device A10.

[0100] 21 to 24 , each of the plurality of heat sinks 71 has a first opening 716. The first opening 716 penetrates each of the first main portion 713 and the second main portion 714 in the second direction x. Furthermore, the first opening 716 penetrates the connecting portion 715 in the first direction z.

[0101] Next, the effects of the semiconductor device A20 will be described.

[0102] The semiconductor device A20 includes a substrate 11, a first semiconductor element 21, and a heat dissipation member 70. The heat dissipation member 70 includes a first heat sink 71A extending in the first direction z. The first heat sink 71A has a first base portion 711, a second base portion 712, a first main portion 713, a second main portion 714, and a connecting portion 715. The first main portion 713 includes a first cross section S1 and a third cross section S3. The second main portion 714 includes a second cross section S2 and a fourth cross section S4. The distance d2 in the second direction x between the third cross section S3 and the fourth cross section S4 is greater than the distance d1 in the second direction x between the first cross section S1 and the second cross section S2. Therefore, with this configuration, the heat dissipation performance of the semiconductor device A20 can be further improved. Furthermore, the semiconductor device A20 has the same configuration as the semiconductor device A10, and thus exhibits the same effects as the semiconductor device A10.

[0103] In the semiconductor device A20, the first heat sink 71A has a first opening 716 penetrating the first main portion 713 in the second direction x. With this configuration, the refrigerant flows in and out of the flow-down area 719 and the first opening 716 in the first heat sink 71A shown in FIG. 24 . This causes turbulence in the refrigerant that comes into contact with the first heat sink 71A, making separation more likely to occur at the interface between the first heat sink 71A and the refrigerant. Therefore, with this configuration, the flow resistance of the refrigerant caused by the first heat sink 71A can be reduced.

[0104] The first opening 716 penetrates the second main portion 714 in the first direction z. The first opening 716 further penetrates the connecting portion 715 in the first direction z. This configuration further increases the flow rate of the refrigerant flowing in and out of the flow-down region 719 and the first opening 716 in the first heat dissipating body 71A shown in FIG. 24 . This reduces the flow resistance of the refrigerant caused by the first heat dissipating body 71A, and allows the first heat dissipating body 71A to be cooled more efficiently.

[0105] Third Embodiment: A semiconductor device A30 according to a third embodiment of the present disclosure will be described with reference to Figures 25 and 26. In this figure, elements that are the same as or similar to those in the semiconductor device A10 described above are designated by the same reference numerals, and duplicated descriptions will be omitted. Here, the illustrated range in Figure 25 corresponds to the illustrated range in Figure 22, which shows the semiconductor device A20 described above.

[0106] In the semiconductor device A30, the configuration of each of the plurality of heat sinks 71 of the heat sink member 70 differs from that of the semiconductor device A20.

[0107] 25 and 26 , each of the multiple heat sinks 71 has a second opening 717 and a third opening 718. The second opening 717 penetrates the first main portion 713 in the second direction x. The second opening 717 is located between the first base portion 711 and the first opening 716. The third opening 718 penetrates the second main portion 714 in the second direction x. The third opening 718 is located between the second base portion 712 and the first opening 716. When viewed in the second direction x, the third opening 718 overlaps the second opening 717.

[0108] Next, a semiconductor device A31 according to a modification of the semiconductor device A30 will be described with reference to Figures 27 and 28. The illustrated range of Figure 27 corresponds to the illustrated range of Figure 25.

[0109] The semiconductor device A31 differs from the semiconductor device A30 in the configuration of each of the heat dissipating bodies 71 of the heat dissipation member 70.

[0110] 27 and 28 , when viewed in the second direction x, the third opening 718 is spaced apart from the second opening 717. The third opening 718 is located between the first base portion 711 and the second opening 717 in the first direction z.

[0111] Next, the effects of the semiconductor device A30 will be described.

[0112] The semiconductor device A30 includes a substrate 11, a first semiconductor element 21, and a heat dissipation member 70. The heat dissipation member 70 includes a first heat sink 71A extending in the first direction z. The first heat sink 71A has a first base portion 711, a second base portion 712, a first main portion 713, a second main portion 714, and a connecting portion 715. The first main portion 713 includes a first cross section S1 and a third cross section S3. The second main portion 714 includes a second cross section S2 and a fourth cross section S4. The distance d2 in the second direction x between the third cross section S3 and the fourth cross section S4 is greater than the distance d1 in the second direction x between the first cross section S1 and the second cross section S2. Therefore, this configuration also enables the semiconductor device A30 to further improve its heat dissipation performance. Furthermore, the semiconductor device A30 has the same configuration as the semiconductor device A10, and thus exhibits the same effects as the semiconductor device A10.

[0113] In the semiconductor device A30, the first heat dissipation body 71A has a first opening 716, a second opening 717, and a third opening 718. This configuration reduces the flow resistance of the coolant caused by the first heat dissipation body 71A, and allows the first heat dissipation body 71A to be cooled more efficiently.

[0114] 29 to 31, a semiconductor device A40 according to a fourth embodiment of the present disclosure will be described. In these figures, elements that are the same as or similar to those in the semiconductor device A10 and semiconductor module B10 described above are designated by the same reference numerals, and redundant description will be omitted. The cross-sectional position in FIG. 31 corresponds to the cross-sectional position in FIG. 8, which shows the semiconductor device A10.

[0115] In the semiconductor device A40, the configuration of the heat dissipation member 70 is different from that of the semiconductor device A10.

[0116] As shown in FIGS. 29 to 31 , the heat dissipation member 70 includes a support 72. The support 72 is located between the heat dissipation layer 114 of the base material 11 and the multiple heat dissipators 71 in the first direction z. The support 72 is flat. The support 72 has a first surface 72A and a second surface 72B that face opposite each other in the first direction z. The first surface 72A faces the heat dissipation layer 114. The first base portion 711 and the second base portion 712 of each of the multiple heat dissipators 71 are joined to the second surface 72B by laser welding or the like. The first surface 72A is joined to the heat dissipation layer 114 via a bonding layer 79. Therefore, the first base portion 711 and the second base portion 712 of each of the multiple heat dissipators 71 are supported by the heat dissipation layer 114 via the support 72 and the bonding layer 79. The bonding layer 79 includes a sintered body of metal particles. The metal particles include silver. Alternatively, the metal particles may contain copper. Furthermore, the bonding layer 79 may be a thermal interface material (TIM) containing a resin.

[0117] Next, the semiconductor module B20 will be described with reference to Figures 31 and 32. The semiconductor module B20 includes the semiconductor device A40 and a cooler 80. The cross-sectional position in Figure 31 corresponds to the cross-sectional position in Figure 8 showing the semiconductor device A10. The cross-sectional position in Figure 32 corresponds to the cross-sectional position in Figure 11 showing the semiconductor device A10.

[0118] 31 , the support 72 of the heat dissipation member 70 is attached to the support surface 80A of the cooler 80 via a sealant 89. The sealant 89 is sandwiched between the support surface 80A and the second surface 72B of the support 72. As shown in FIGS. 31 and 32 , the support 72 is located outward from the accommodation portion 81 of the cooler 80.

[0119] Next, the effects of the semiconductor device A40 will be described.

[0120] The semiconductor device A40 includes a substrate 11, a first semiconductor element 21, and a heat dissipation member 70. The heat dissipation member 70 includes a first heat sink 71A extending in the first direction z. The first heat sink 71A has a first base portion 711, a second base portion 712, a first main portion 713, a second main portion 714, and a connecting portion 715. The first main portion 713 includes a first cross section S1 and a third cross section S3. The second main portion 714 includes a second cross section S2 and a fourth cross section S4. The distance d2 in the second direction x between the third cross section S3 and the fourth cross section S4 is greater than the distance d1 in the second direction x between the first cross section S1 and the second cross section S2. Therefore, with this configuration, the heat dissipation performance of the semiconductor device A40 can be further improved. Furthermore, the semiconductor device A40 has the same configuration as the semiconductor device A10, and thus exhibits the same effects as the semiconductor device A10.

[0121] In the semiconductor device A40, the heat dissipation member 70 includes a support 72 located between the heat dissipation layer 114 of the base material 11 and the first heat dissipation body 71A. The first base portion 711 and the second base portion 712 of the first heat dissipation body 71A are bonded to the support 72. The support 72 is bonded to the heat dissipation layer 114. This configuration allows a greater number of heat dissipation bodies 71 to be bonded to the support 72. Furthermore, if there are multiple elements in the semiconductor device A40 excluding the heat dissipation member 70, these multiple elements can be easily bonded to the heat dissipation member 70.

[0122] The present disclosure is not limited to the above-described embodiment. The specific configuration of each part of the present disclosure can be freely designed and modified in various ways. Each of the configurations of the semiconductor module B10 and the semiconductor module B20 described above includes a cooler 80 that is a liquid cooling device. Alternatively, the cooler 80 can be an air-cooled device that uses air as a refrigerant. In the cooler 80 that is an air-cooled device, the accommodation section 81 of the cooler 80 can be an open type.

[0123] The present disclosure includes embodiments described in the following supplementary notes. Supplementary note 1. A semiconductor device comprising: a substrate (11); a first semiconductor element (21) mounted on one side of the substrate in a first direction (z); and a heat dissipation member (70) located on the opposite side of the substrate from the first semiconductor element and supported by the substrate, wherein the heat dissipation member includes a first heat dissipation body (71A) extending in the first direction, and the first heat dissipation body has a first base portion (711), a second base portion (712), a first main portion (713), a second main portion (714), and a connecting portion (715), the first base portion and the second base portion being adjacent to each other in a second direction (x) perpendicular to the first direction and supported by the substrate, the first main portion extending from the first base portion in the first direction, and the second main portion being adjacent to the first main portion in the second direction and extending from the second base portion in the first direction. the connecting portion is located on the opposite side of the first and second base portions relative to the first and second main portions and is connected to the first and second main portions, the first main portion includes a first cross section (S1) that is a boundary surface with the first base portion, and a third cross section (S3) that is located between the first cross section and the connecting portion and faces the same side as the first cross section in the first direction, the second main portion includes a second cross section (S2) that is a boundary surface with the second base portion, and a fourth cross section (S4) that is located between the second cross section and the connecting portion and faces the same side as the second cross section in the first direction, the distance in the first direction from the second cross section to the fourth cross section is equal to the distance in the first direction from the first cross section to the third cross section, and a distance (d2) in the second direction between the third cross section and the fourth cross section is greater than the distance (d1) in the second direction between the first cross section and the second cross section. The semiconductor device (A10) described in Appendix 1, wherein the first main portion (713) and the second main portion (714) each include a fifth cross section (S5) and a sixth cross section (S6) which are boundary surfaces with the connecting portion (715), and a distance (d3) in the second direction (x) between the fifth cross section and the sixth cross section is greater than a distance (d2) in the second direction between the third cross section (S3) and the fourth cross section (S4).Supplementary Note 3. The semiconductor device (A10) according to Supplementary Note 2, wherein the first cross section (S1) and the second cross section (S2) are in contact with each other. Supplementary Note 4. The semiconductor device (A10) according to Supplementary Note 3, wherein a distance (d3) in the second direction (x) between the fifth cross section (S5) and the sixth cross section (S6) is equal to or greater than the dimensions in the second direction of each of the first main portion (713) and the second main portion (714). Supplementary Note 5. The semiconductor device (A11) according to Supplementary Note 4, wherein the connecting portion (715) bulges out in the first direction (z) from the first main portion (713) and the second main portion (714) as a reference to the side opposite to the side on which the first base portion (711) and the second base portion (712) are located. Supplementary Note 6. The semiconductor device (A20) according to Supplementary Note 2, wherein the first heat sink (71A) has a first opening (716) penetrating the first main portion (713) in the second direction (x). Supplementary Note 7. The semiconductor device (A20) according to Supplementary Note 6, wherein the first opening (716) penetrates the second main portion (714) in the second direction (x). Supplementary Note 8. The semiconductor device (A20) according to Supplementary Note 7, wherein the first opening (716) penetrates the connecting portion (715) in the first direction (z). Supplementary Note 9. The semiconductor device (A30) according to Supplementary Note 8, wherein the first heat sink (71A) has a second opening (717) penetrating the first main portion (713) in the second direction (x), and the second opening is located between the first base portion (711) and the first opening (716). Supplementary Note 10. The semiconductor device (A30) according to Supplementary Note 9, wherein the first heat sink (71A) has a third opening (718) penetrating the second main portion (714) in the second direction (x), and the third opening is located between the second base portion (712) and the first opening (716). Supplementary Note 11. The semiconductor device (A30) according to Supplementary Note 10, wherein the third opening (718) overlaps the second opening (717) when viewed in the second direction (x). Supplementary Note 12. The semiconductor device (A10) according to Supplementary Note 2, wherein the heat sink (70) includes a second heat sink (71B) extending in the first direction (z), and the second heat sink is located adjacent to the first heat sink (71A) in the second direction (x), and the shape and size of the second heat sink are the same as the shape and size of the first heat sink.Supplementary Note 13. The semiconductor device (A10) according to Supplementary Note 12, wherein the heat dissipation member (70) includes a third heat dissipation body (71C) extending in the first direction (z), the third heat dissipation body is located on one side of the first heat dissipation body (71A) and the second heat dissipation body (71B) in a third direction (y) orthogonal to each of the first direction and the second direction (x), and the shape and size of the third heat dissipation body are the same as the shape and size of the first heat dissipation body. Supplementary Note 14. The semiconductor device (A10) according to any one of Supplementary Notes 1 to 13, wherein the base material (11) includes an insulating layer (111), a first conductive layer (112) located between the insulating layer and the first semiconductor element (21) in the first direction (z) and bonded to the insulating layer, and a heat dissipation layer (114) located on the opposite side of the insulating layer from the first conductive layer and bonded to the insulating layer, the first semiconductor element being conductively bonded to the first conductive layer, and the heat dissipation member (70) being supported by the heat dissipation layer.Supplementary Note 15. The semiconductor device (A10) according to Supplementary Note 14, wherein the first base portion (711) and the second base portion (712) are bonded to the heat dissipation layer (114).Supplementary Note 16. The semiconductor device (A40) according to Appendix 14, wherein the heat dissipation member (70) includes a support (72) located between the heat dissipation layer (114) and the first heat dissipation body (71A), the first base (711) and the second base (712) are bonded to the support, and the support is bonded to the heat dissipation layer. Appendix 17. The semiconductor device (A10) according to Appendix 14, further including a second semiconductor element (22) conducting to the first semiconductor element (21), the base material (11) including a second conductive layer (113) located on the same side as the first conductive layer (112) with respect to the insulating layer (111) in the first direction (z), and the second semiconductor element is bonded to the second conductive layer. Appendix 18. The semiconductor device (A10) according to Appendix 17 further comprises a sealing resin (50) that covers the first semiconductor element (21) and the second semiconductor element (22), the sealing resin having a bottom surface (52) that faces a side on which the heat dissipation member (70) is located with the base material (11) as a reference in the first direction (z), and the heat dissipation layer (114) is exposed from the bottom surface.Supplementary Note 19. A semiconductor module (B10) comprising: the semiconductor device (A10) according to Supplementary Note 18; and a cooler (80), wherein the semiconductor device is attached to the cooler, the cooler has a hollow housing portion (81), and the first heat dissipation body (71A) is housed in the housing portion. Supplementary Note 20. A vehicle (C) comprising: a drive source (932); and the semiconductor module (B10) according to Supplementary Note 19, wherein the semiconductor module is electrically connected to the drive source. Supplementary Note 21. The semiconductor device (A10) according to Supplementary Note 4, wherein the connecting portion (715) has an end surface facing the opposite side to the side on which the first base portion (711) and the second base portion (712) are located, with the first main portion (713) and the second main portion (714) as references in the first direction (z), and the end surface is flat. Supplementary Note 22. The semiconductor device (A31) according to Appendix 10, wherein the third opening (718) is spaced apart from the second opening (717) when viewed in the second direction (x). Appendix 23. The semiconductor device (A10) according to Appendix 13, wherein the third heat sink (71C) overlaps the first heat sink (71A) when viewed in the third direction (y). Appendix 24. The semiconductor device (A10) according to Appendix 18, further comprising a first signal terminal (161) electrically connected to the first semiconductor element (21), the sealing resin (50) having a top surface (51) facing away from the bottom surface (52) in the first direction (z), and a portion of the first signal terminal (161) protruding from the top surface in the first direction. Appendix 25. The semiconductor device (A10) described in Appendix 24 further comprises a first power terminal (12), a second power terminal (13), and a third power terminal (14), wherein the first power terminal is conductively joined to the first conductive layer (112), the second power terminal is conductively joined to the second conductive layer (113), and the third power terminal is electrically connected to the second semiconductor element (22), and a portion of each of the first power terminal, the second power terminal, and the third power terminal protrudes from the sealing resin (50).

[0124] A10 to A40: semiconductor device, B10, B20: semiconductor module, C: vehicle, 11: base material, 111: insulating layer, 112, 113: first conductive layer, second conductive layer, 112A, 113A: first mounting surface, second mounting surface, 114: heat dissipation layer, 12: first terminal, 121: first covering portion, 122: first exposed portion, 13: second terminal, 131: second covering portion, 132: second exposed portion, 14: third terminal, 141: third covering portion, 142: third exposed portion, 15: fourth power terminal, 151: fourth covering portion, 152: fourth exposed portion, 161, 162: first signal terminal, second signal terminal, 171 , 172: third signal terminal, fourth signal terminal, 18, 19: fifth signal terminal, sixth signal terminal, 21: first semiconductor element, 211: first electrode, 212: second electrode, 213: first gate electrode, 214: first detection electrode, 22: second semiconductor element, 221: third electrode, 222: fourth electrode, 223: second gate electrode, 224: second detection electrode, 23: thermistor, 29: conductive bonding layer, 31: first conductive member, 311: first main portion, 312: first bonding portion, 313: first connecting portion, 314: second bonding portion, 315: second connecting portion, 32: second conductive member, 321: second main portion, 322: third bonding portion, 323: third connecting portion, 324: fourth bonding portion, 325: fourth connecting portion, 326: middle portion, 327: horizontal beam portion, 41 to 47: first wire to seventh wire, 50: sealing resin, 51: top surface, 52: bottom surface, 53, 54: first side surface, second side surface, 55: recess, 61: first wiring, 611: first mounting layer, 612: first metal layer, 613: first gate wiring layer, 614: first detection wiring layer, 616: second detection wiring layer, 62: second wiring, 621: second mounting layer, 622: second metal layer, 623: second gate wiring layer, 624: third detection wiring layer, 625: temperature Temperature detection wiring layer, 63: sleeve, 68, 69: first bonding layer, second bonding layer, 70: heat dissipation member, 71: heat dissipation body, 71A, 71B, 71C: first heat dissipation body, second heat dissipation body, third heat dissipation body, 711, 712: first base portion, second base portion, 713, 714: first main portion, second main portion, 715: connecting portion, 716, 717, 718: first opening, second opening, third opening, 719: flow down area, 72: support body, 72A, 72B: first surface, second surface, 79: bonding layer, 80: cooler, 80A: support surface, 81: storage portion, 89: sealing material, S1 to S6: first cross section to sixth cross section, d1, d2,d3: distance, 91: on-board charger, 92: storage battery, 93: drive system, 931: inverter, 932: drive source, z, x, y: first direction, second direction, third direction,

Claims

1. A semiconductor device comprising: a substrate; a first semiconductor element mounted on one side of the substrate in a first direction; and a heat dissipation member located on the opposite side of the substrate from the first semiconductor element and supported by the substrate, wherein the heat dissipation member includes a first heat dissipation body extending in the first direction, the first heat dissipation body having a first base, a second base, a first main portion, a second main portion, and a connecting portion, the first base and the second base being adjacent to each other in a second direction perpendicular to the first direction and supported by the substrate, the first main portion extending from the first base in the first direction, the second main portion being adjacent to the first main portion in the second direction and extending from the second base in the first direction, the connecting portion being located on the opposite side of the first base and the second base with respect to the first main portion and the second main portion and being connected to the first main portion and the second main portion, a semiconductor device in which the first main portion includes a first cross section that is an interface with the first base portion, and a third cross section that is located between the first cross section and the connecting portion and faces the same side as the first cross section in the first direction; the second main portion includes a second cross section that is an interface with the second base portion, and a fourth cross section that is located between the second cross section and the connecting portion and faces the same side as the second cross section in the first direction; the distance in the first direction from the second cross section to the fourth cross section is equal to the distance in the first direction from the first cross section to the third cross section; and the distance in the second direction between the third cross section and the fourth cross section is greater than the distance in the second direction between the first cross section and the second cross section.

2. The semiconductor device according to claim 1, wherein the first main portion and the second main portion each include a fifth cross section and a sixth cross section which are boundary surfaces with the connecting portion, and the distance in the second direction between the fifth cross section and the sixth cross section is greater than the distance in the second direction between the third cross section and the fourth cross section.

3. The semiconductor device according to claim 2, wherein the first cross section and the second cross section are in contact with each other.

4. The semiconductor device according to claim 3, wherein the distance in the second direction between the fifth cross section and the sixth cross section is equal to or greater than the dimensions in the second direction of each of the first main portion and the second main portion.

5. The semiconductor device according to claim 4, wherein the connecting portion bulges out in the first direction on the side opposite to the side on which the first base portion and the second base portion are located, with the first main portion and the second main portion as reference points.

6. The semiconductor device according to claim 2, wherein said first heat sink has a first opening penetrating said first main portion in said second direction.

7. The semiconductor device according to claim 6, wherein said first opening penetrates said second main portion in said second direction.

8. The semiconductor device according to claim 7, wherein the first opening penetrates the connecting portion in the first direction.

9. The semiconductor device according to claim 8, wherein the first heat sink has a second opening penetrating the first main portion in the second direction, and the second opening is located between the first base portion and the first opening.

10. The semiconductor device described in claim 9, wherein the first heat sink has a third opening penetrating the second main portion in the second direction, and the third opening is located between the second base portion and the first opening.

11. The semiconductor device according to claim 10, wherein the third opening overlaps the second opening when viewed in the second direction.

12. The semiconductor device described in claim 2, wherein the heat dissipation member includes a second heat dissipation body extending in the first direction, the second heat dissipation body is located adjacent to the first heat dissipation body in the second direction, and the shape and size of the second heat dissipation body are the same as the shape and size of the first heat dissipation body.

13. The semiconductor device described in claim 12, wherein the heat dissipation member includes a third heat dissipation body extending in the first direction, the third heat dissipation body being located on one side of a third direction perpendicular to each of the first and second directions of the first and second heat dissipation bodies, and the shape and size of the third heat dissipation body being the same as the shape and size of the first heat dissipation body.

14. A semiconductor device as described in any one of claims 1 to 13, wherein the base material includes an insulating layer, a first conductive layer located between the insulating layer and the first semiconductor element in the first direction and bonded to the insulating layer, and a heat dissipation layer located on the opposite side of the insulating layer from the first conductive layer and bonded to the insulating layer, the first semiconductor element being conductively bonded to the first conductive layer, and the heat dissipation member being supported by the heat dissipation layer.

15. The semiconductor device according to claim 14, wherein the first base portion and the second base portion are bonded to the heat dissipation layer.

16. The semiconductor device according to claim 14, wherein the heat dissipation member includes a support positioned between the heat dissipation layer and the first heat sink, the first base and the second base are bonded to the support, and the support is bonded to the heat dissipation layer.

17. The semiconductor device described in claim 14, further comprising a second semiconductor element conducting to the first semiconductor element, the substrate including a second conductive layer located on the same side as the first conductive layer relative to the insulating layer in the first direction and bonded to the insulating layer, and the second semiconductor element being bonded to the second conductive layer.

18. The semiconductor device described in claim 17, further comprising a sealing resin covering the first semiconductor element and the second semiconductor element, the sealing resin having a bottom surface facing the side where the heat dissipation member is located relative to the base material in the first direction, and the heat dissipation layer being exposed from the bottom surface.

19. A semiconductor module comprising: the semiconductor device according to claim 18; and a cooler, wherein the semiconductor device is attached to the cooler, the cooler has a hollow housing portion, and the first heat sink is housed in the housing portion.

20. A vehicle comprising: a drive source; and the semiconductor module according to claim 19, wherein the semiconductor module is electrically connected to the drive source.

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